Compilation of Changes to the CPC Scheme
- Last updated
- Tuesday January 31, 2023
- Maintained by
- OIPC/Classification Standards and Development
Presentation Details:
Entries for new symbols and headings: | Black text in italics |
Entries for existing symbols and headings | |
—text insertions: | Green text in italics with yellow background |
—text deletions: | Red strikethrough text with grey background |
Entries for deleted symbols and headings: | Black strikethrough text |
- In cases when the originating project cannot be found, "N/A" is given for the Project information (e.g. the change could be due to an Editorial Correction).
- Projects ending in "-F" indicate finalisation after reclassification was completed.
Scheme Areas Updated:81
- A01N, A41B, A41C, A41D, A41F, A41G, A41H, A45C, A45D, A61K, A61L, A61M, A61P, A61Q, A62B
- B01L, B03B, B03C, B06B, B08B, B09B, B23Q, B41M, B60H, B64D, B64G, B65D, B81B, B81C
- C09C, C09K, C12M, C23D, C23G, C30B
- E05B
- F02D, F16F, F21K
- G01B, G01L, G01N, G01R, G04F, G06, G06C, G06F, G06Q, G09G, G10L, G11C, G16, G21D
- H01C, H01F, H01G, H01H, H01J, H01L, H01M, H01R, H01S, H02B, H02G, H02H, H02M, H02N, H02S, H03B, H03F, H03H, H04B, H04H, H04R, H04W, H05B, H05G, H10, H10B, H10K, H10N
- A01N, A41B, A41C, A41D, A41F, A41G, A41H, A45C, A45D, A61K, A61L, A61M, A61P, A61Q, A62B
- B01L, B03B, B03C, B06B, B08B, B09B, B23Q, B41M, B60H, B64D, B64G, B65D, B81B, B81C
- C09C, C09K, C12M, C23D, C23G, C30B
- E05B
- F02D, F16F, F21K
- G01B, G01L, G01N, G01R, G04F, G06, G06C, G06F, G06Q, G09G, G10L, G11C, G16, G21D
- H01C, H01F, H01G, H01H, H01J, H01L, H01M, H01R, H01S, H02B, H02G, H02H, H02M, H02N, H02S, H03B, H03F, H03H, H04B, H04H, H04R, H04W, H05B, H05G, H10, H10B, H10K, H10N
Update to CPC Project Numbering
As a result of system upgrades, as of the CPC 2022.05 release, the numbering system of CPC projects is changed from parallel numbering to serial numbering and an extra digit is added.
From 2013 to 2022.02, projects used a set of parallel numbering, e.g. RP0001, RP0002, MP0001, MP0002, DP0001, DP0002.
The new numbering is a single set of serial numbers with an extra leading digit, e.g. RP10001, DP10002, MP10003, MP10004, DP10005, RP10006 so that each project gets a unique number to eliminate any risk of confusion between projects of different types.
When finalising a project that was originally published with an old-style number, the old number is still used for convenience and clarity.
As a result of system upgrades, as of the CPC 2022.05 release, the numbering system of CPC projects is changed from parallel numbering to serial numbering and an extra digit is added.
From 2013 to 2022.02, projects used a set of parallel numbering, e.g. RP0001, RP0002, MP0001, MP0002, DP0001, DP0002.
The new numbering is a single set of serial numbers with an extra leading digit, e.g. RP10001, DP10002, MP10003, MP10004, DP10005, RP10006 so that each project gets a unique number to eliminate any risk of confusion between projects of different types.
When finalising a project that was originally published with an old-style number, the old number is still used for convenience and clarity.
Type M overridden for symbol A41G 1/00 in project MP11921, as there is no change.
Archived versions are only available as PDF
Duplicate entries may appear when viewing 'By Project' where multiple projects impact the same symbol
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Project: MP11764 (A01N)
M | PRESERVATION OF BODIES OF HUMANS OR ANIMALS OR PLANTS OR PARTS THEREOF (preservation of food or foodstuff A23); BIOCIDES, e.g. AS DISINFECTANTS, AS PESTICIDES OR AS HERBICIDES (preparations for medical, dental or NOTES 1. This subclass covers:
2. This subclass does not cover materials which affect the growth of a plant solely by supplying nutrients, i.e. plant food, ordinarily required for growth or materials which are used to prevent or cure mineral deficiencies in plants, e.g. addition of iron chelates to cure iron chlorosis, which materials are covered by class C05. 3. In this subclass, the following expression is used with the meaning indicated:
4. Biocidal, pest repellant, pest attractant or plant growth regulatory activity of compounds or preparations is further classified in subclass A01P. 5. {In this subclass, combination sets [C-Sets] are used. The detailed information about the C-Sets construction and the associated syntax rules are found in the Definitions.} WARNING The following IPC groups are not in the CPC scheme. The subject matter for these IPC groups is classified in the following CPC groups:
|
Project: MP11921 (A41B)
M | SHIRTS; UNDERWEAR; BABY LINEN; HANDKERCHIEFS WARNING {In this subclass, non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme.} |
U | Shirts | |
U | · Details | |
U | · · |
U | Collars (A41B 1/00 takes precedence) | |
U | · fastening to shirts (collar-studs A44B 3/00) | |
M | · chemically stiffened |
M | Fold-line formings for collars or cuffs |
M | ||
M | · Knickers for ladies, with or without inserted crotch or seat parts | |
U | · Combined undergarments (panti-hose, body-stockings A41B 11/14) | |
U | · Protective undergarments (combined with swabs or absorbent pads or specially adapted for supporting them A61F 13/15) | |
M | · Shoulder-straps forming part of the undergarments |
U | Hosiery; Panti-hose (elastic stockings for curative purposes A61F 13/08) | |
U | · Stocking protectors (to be put in footwear A43B 23/28) | |
M | · Means at the upper end to keep the stockings up (A41B 11/04 takes precedence |
M | Baby linen ( | |
U | · Babies' pants (combined with swabs or absorbent pads or specially adapted for supporting them A61F 13/15) |
Project: MP11921 (A41C)
M | CORSETS; BRASSIERES WARNING {In this subclass, non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme.} |
Project: MP11921 (A41D)
M | OUTERWEAR; PROTECTIVE GARMENTS; ACCESSORIES NOTE In this subclass, the following term is used with the meaning indicated:
WARNING {In this subclass, non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme.} |
Project: MP11921 (A41F)
M | GARMENT FASTENINGS; SUSPENDERS WARNING {In this subclass, non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme.} |
M | Fastening devices specially adapted for garments {( |
Project: MP11921 (A41G)
M | ARTIFICIAL FLOWERS; WIGS; MASKS; FEATHERS WARNING {In this subclass, non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme.} |
U | Artificial flowers, fruit, leaves, or trees (artificial Christmas trees A47G 33/06); Garlands |
U | Wigs (for dolls only A63H 3/44) |
M | Adornments of natural feathers; Working natural feathers (treatment of bed feathers B68G 3/00 |
Project: MP11921 (A41H)
M | APPLIANCES OR METHODS FOR MAKING CLOTHES, e.g. FOR DRESS-MAKING WARNING {In this subclass, non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme.} |
M | Measuring aids or methods | |
M | · in combination with marking |
M | Patterns for cutting-out; Methods of drafting or marking-out such patterns, e.g. on the cloth | |
M | · Making patterns by copying |
M | Dress forms; Bust forms; Stands |
M | Devices or methods for trimming, levelling |
U | Cushions for needles or pins (A41H 19/00 takes precedence) |
M | Devices for applying chalk; Sharpening or holding chalk |
M | Appliances or methods for marking-out, perforating |
M | Machines or appliances for folding the edges of collars, cuffs |
M | Machines, appliances or methods for setting fastener-elements on garments |
M | Machines or appliances for making garments from natural or artificial fur |
M | Multi-step production lines for making clothes |
U | Other methods, machines or appliances | |
M | · Handling garment parts or blanks, e.g. feeding, piling, separating | |
M | · |
Project: MP11764 (A45C)
U | Rigid or semi-rigid luggage (collapsible or extensible luggage, bags or the like A45C 7/00) | |
M | · { |
M | Receptacles for purposes not provided for in groups A45C 1/00 | |
M | · {Pocket |
Project: MP11764 (A45D)
M | HAIRDRESSING OR SHAVING EQUIPMENT (wigs, toupees WARNING The following IPC groups are not in the CPC scheme. The subject matter for these IPC groups is classified in the following CPC groups:
|
M | A45D 33/00 - A45D 40/00 | Containers or accessories specially adapted for handling |
M | Containers or accessories specially adapted for handling | |
M | · {Vanity boxes or cases, compacts, i.e. containing a powder receptacle and a puff or applicator (A45D 33/025 - A45D 33/34 and A45D 40/22 take precedence | |
U | · combined with other objects | |
M | · · with lipstick holders or with other | |
M | · Papers containing cosmetic powder or other |
M | Containers or accessories specially adapted for handling liquid | |
M | · in combination with other |
M | Sachet pads |
M | Casings or accessories specially adapted for storing or handling solid or pasty |
M | A45D 42/00 - A45D 44/00 | Other cosmetic or |
M | Other cosmetic or |
Project: MP11764 (A61K)
M | PREPARATIONS FOR MEDICAL, DENTAL NOTES 1. This subclass covers the following subject matter, whether set forth as a composition (mixture), process of preparing the composition or process of treating using the composition:
2. Attention is drawn to the definitions of groups of chemical elements following the title of section C. 3. Attention is drawn to the notes in class C07, for example the notes following the title of the subclass C07D, setting forth the rules for classifying organic compounds in that class, which rules are also applicable, if not otherwise indicated, to the classification of organic compounds in A61K. 4. In this subclass, with the exception of group A61K 8/00, the last place priority rule is applied, i.e. at each hierarchical level, in the absence of an indication to the contrary, classification is made in the last appropriate place. 5. Therapeutic activity of medicinal preparations is further classified in subclass A61P. WARNINGS 1. The following IPC groups are not in the CPC scheme. The subject matter for these IPC groups is classified in the following CPC groups:
The following IPC indexing codes are not in the CPC scheme:
2. Subgroups of A61K 48/00 are incomplete (Jan. 2003). Documents are being reclassified from A61K 48/00 to its subgroups 3. In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
M | Cosmetics or similar NOTES 1. Use of cosmetics or similar 2. {Use of cosmetics or similar 3. {Attention is drawn to the Notes in class C07, for example the notes following the title of subclass C07D, setting forth the rules for classifying organic compounds in that class, which rules are also applicable, if not otherwise indicated, to the classification of organic compounds in group A61K 8/00. 4. {Salts or complexes of organic compounds are classified according to the base compounds. If a complex is formed between two or more compounds, classification is made for each compound. |
Project: MP11764 (A61L)
M | METHODS OR APPARATUS FOR STERILISING MATERIALS OR OBJECTS IN GENERAL; DISINFECTION, STERILISATION NOTE In groups A61L 2/00 - A61L 12/00, it is desirable to add the indexing codes of groups {A61L 2101/00 - A61L 2101/50}. WARNINGS 1. The following IPC groups are not in the CPC scheme. The subject matter for these IPC groups is classified in the following CPC groups:
2. {In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme.} |
Project: MP11764 (A61M)
M | Devices for applying |
Project: MP11922 (A61P)
M | Non-central analgesic, antipyretic or |
Project: MP11764 (A61Q)
M | SPECIFIC USE OF COSMETICS OR SIMILAR NOTES 1. This subclass covers the use of cosmetics or similar 2. When classifying in this subclass, classification is also made in subclass A61P 3. In this subclass, the use of cosmetics or similar toiletry preparations is classified in all appropriate places. 4. Attention is drawn to cases where the subject of the invention concerns only the specific use of cosmetics or toiletry preparations, and the chemical structure, compound, mixture or composition of this subject of the invention is known. In such cases, classification is made in main group A61K 8/00 or in subclass C11D, and also in subclass A61Q as invention information. In addition, if the chemical structure, compound, mixture or composition or any individual ingredient of a mixture or composition is considered to represent information of interest for search, it may also be classified as additional information. 5. The classification symbols of this subclass are not listed first when assigned to patent documents. WARNING In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
M | Cosmetics or similar NOTE Classification is only made in this group when a specific use for a cosmetic or similar toiletry preparation has been clearly disclosed, the specific use not being appropriate to any of the preceding groups in this subclass. |
Project: MP11840 (A62B)
M | Protective clothing affording protection against heat or harmful chemical agents or for use at high altitudes (protective clothing or garments for work or sport A41D 13/00 |
Project: MP11909 (B01L)
M | CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE NOTE This subclass covers only laboratory apparatus which is either applicable solely to laboratory purposes or which, by reason of its simple construction and adaptability, is such as would not be suitable for industrial use. WARNINGS 1. The following IPC groups are not in the CPC scheme. The subject matter for these IPC groups is classified in the following CPC groups:
2. {In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme.} |
M | Enclosures; Chambers ( | |
M | · Dust-free rooms or enclosures |
M | Containers or dishes for laboratory use, e.g. laboratory glassware NOTE Petri dishes for enzymology or microbiology are classified in group C12M 1/22. | |
M | · Flasks |
M | ||
M | · Gas collection apparatus, e.g. by bubbling under water (for sampling |
M | Heating or cooling apparatus ( |
M | Supporting devices; Holding devices |
Project: MP11763 (B03B)
M | SEPARATING SOLID MATERIALS USING LIQUIDS OR USING PNEUMATIC TABLES OR JIGS WARNING In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
M | Conditioning for facilitating separation by altering physical properties of the matter to be treated |
M | Separating by pneumatic tables or by pneumatic jigs NOTE | |
M | · using rotary tables or tables formed by travelling belts |
U | Washing granular, powdered or lumpy materials; Wet separating (separating by pneumatic tables or by pneumatic jigs B03B 4/00) | |
U | · by sink-float separation | |
U | · · using heavy liquids or suspensions | |
M | · · · using centrifugal force | |
M | · · · Devices therefor, other than using centrifugal force | |
M | · by mechanical classifiers | |
M | · | |
M | · by water impulse ( |
M | Feed or discharge devices integral with washing or wet-separating equipment |
M | Control arrangements specially adapted for wet-separating apparatus or for dressing plant, using physical effects | |
M | · {Methods or arrangements for controlling the physical properties of heavy media |
Project: MP11910 (B03C)
M | MAGNETIC OR ELECTROSTATIC SEPARATION OF SOLID MATERIALS FROM SOLID MATERIALS OR FLUIDS; SEPARATION BY HIGH-VOLTAGE ELECTRIC FIELDS ( WARNING {In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme.} |
U | Magnetic separation | |
U | · acting directly on the substance being separated | |
U | · · High gradient magnetic separators | |
M | · · · with circulating matrix or matrix elements | |
M | · acting on the medium containing the substance being separated, e.g. |
M | Separating dispersed particles from gases or vapour, e.g. air, by electrostatic effect | |
M | · Plant or installations having external electricity supply | |
M | · Transportable units, e.g. for cleaning room air | |
U | · Constructional details or accessories or operation thereof | |
M | · · Particle charging or ionising stations, e.g. using electric discharge, radioactive radiation | |
U | · · Applications of electricity supply techniques | |
M | · · · Control systems therefor {(electricity supply or control systems for cleaning the electrodes B03C 3/746, B03C 3/763)} |
M | Separating dispersed particles from liquids by electrostatic effect ({flocculation or agglomeration of electric particles induced by electric field B01D 21/0009 NOTE In this group, the following term is used with the meaning indicated:
|
Project: RP11761 (B06B)
U | Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency | |
U | · | |
· · operating with piezo-electric effect or with electrostriction ( | ||
· · operating with magnetostriction ( |
Project: MP11840 (B08B)
U | Cleaning by methods involving the use or presence of liquid or steam (B08B 9/00 takes precedence) | |
U | · Cleaning involving contact with liquid | |
M | · · with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity | |
M | · · · by sonic or ultrasonic vibrations (washing or rinsing machines for crockery or tableware using sonic or ultrasonic waves A47L 15/13; of natural teeth, of prostheses using ultrasonic techniques similar to those used for natural teeth A61C 17/20; application of ultrasonic vibrations to chemical, physical |
M | Cleaning hollow articles by methods or apparatus specially adapted thereto ( |
Project: MP11922 (B09B)
U | Type of solid waste | |
U | · Electronic waste | |
M | · · Printed circuit boards [ |
Project: RP11761 (B23Q)
Members which are comprised in the general build-up of a form of machine, particularly relatively large fixed members (B23Q 37/00 takes precedence {; positioning supports for measuring arrangements G01B 5/0004; motorised alignment for optical elements G02B 7/005; handling of mask or wafer G03F 7/70691; adjusting or compensating devices for optical apparatuses G12B 5/00 |
Project: RP11801 (B41M)
Printing processes to produce particular kinds of printed work, e.g. patterns ( |
Project: RP11761 (B60H)
U | Heating, cooling or ventilating {[HVAC]} devices (heating, cooling or ventilating devices providing other air treatment, the other treatment being relevant, B60H 3/00; ventilating solely by opening windows, doors, roof parts, or the like B60J; heating or ventilating devices for vehicle seats B60N 2/56; vehicle window or windscreen cleaners using air, e.g. defrosters, B60S 1/54) NOTE In this group and its subgroups, as well as in patent documents, the following abbreviation is used:
| |
· {Air-conditioning devices using the Peltier effect (for air-conditioning in general F24F 5/0042; for refrigeration F25B 21/02 |
Project: MP11840 (B64D)
M | EQUIPMENT FOR FITTING IN OR TO AIRCRAFT; WARNINGS 1. The following IPC groups are not in the CPC scheme. The subject matter for these IPC groups is classified in the following CPC groups:
2. In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
M |
Project: MP11840 (B64G)
U | Cosmonautic vehicles | |
U | · Parts of, or equipment specially adapted for fitting in or to, cosmonautic vehicles | |
M | · · |
Project: MP11764 (B65D)
M | Containers, packaging elements or packages, specially adapted for particular articles or materials (B65D 71/00, B65D 83/00 take precedence; hand implements or travelling equipment A45C NOTE Attention is drawn to Note (5) following the title of this subclass. |
Project: RP11761 , RP11760 (B81B)
MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES ( NOTES 1. This subclass does not cover:
2. Devices or systems classified in this subclass are also classified in appropriate subclasses providing for their structural or functional features, if such features are of interest. 3. Attention is drawn to the following places:
4. In this subclass, local "residual" subgroups, e.g. B81B 7/0077, are used with the following purpose:
In the example, the document shall be classified in B81B 7/0077 and not in B81B 7/0032 as B81B 7/0077 is "residual" to B81B 7/0035-B81B 7/0074 WARNING In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
Project: RP11761 (B81B)
U | Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes (B81B 5/00 takes precedence) | |
U | · {Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators} | |
· · {Transducers for transforming electrical into mechanical energy or vice versa (dynamo-electric machines H02K 99/00; electrostatic machines H02N 1/00 |
Project: RP11761 (B81C)
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J 13/02 NOTES 1. This subclass does not cover:
2. In this subclass, local "residual" subgroups, e.g. B81C 1/00126, are used with the following purpose. When classifying a document which does not fit in any of a set of subgroups with the same dot-level, the document should be classified in the residual group, if present, and not in the group at the hierarchical level one dot above. In the example, the document shall be classified in B81C 1/00126 and not in B81C 1/00023 as B81C 1/00126 is "residual" to B81C 1/00031-B81C 1/00119 |
Project: MP11911 (C09C)
M | TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ( NOTES 1. In this subclass, in the absence of an indication to the contrary, a compound is classified in the last appropriate place 2. Treatment by polymerisation onto particle is classified in C08F 292/00. Only treatment by already polymerised agents is classified in C09C 3. Whenever in groups C09C 1/00 - C09C 1/66 the materials consist of a particulate core bearing a coating or any other deposit, classification is done only according to the composition of the core, unless otherwise stated, e.g. C09C 1/0015, C09C 1/0078 4. Preparations of those materials which are no single chemical compounds comprise those of many ceramic pigments (C09C 1/0009), consisting of solid solutions or polycristalline structures, and those defined as composite materials (C09C 1/0081) 5. Preparation and treatment steps are not always easy to distinguish from each other, e.g. preparation in the presence of treating agents (by precipitation or calcination), precise reacting conditions, affecting pigmentary effects. It is common practice to include these complex topics in C09C 1/00 while avoiding redundancy 6. When classifying in this subclass, the indexing codes of subclass C01P are used to identify structural or physical aspects of solid inorganic compounds WARNINGS 1. The following IPC groups are not in the CPC scheme. The subject matter for these IPC groups is classified in the following CPC groups:
2. {In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme.} |
M | Treatment of specific inorganic materials other than fibrous fillers ( | |
M | · {Pigments exhibiting interference colours, e.g. transparent platelets of appropriate thinness or flaky substrates, e.g. mica, bearing appropriate thin transparent coatings NOTES 1. {The optical properties of the interference pigments are depending on the order of the different layers applied on the substrate in view of their refractive indices; A refractive index < or = 1.8 is considered low, a refractive index >1.8 is considered high; A dye is always an organic, coloured material. An aluminium lake compound would for classification purposes also fall under this definition, as well as any coloured metal chelate or metal complex with organic ligands; An interference pigment can e.g. have a flaky, spherical or ellipsoidal core; A pigment comprising a core consisting of a metal is only considered as an interference pigment if it shows properties typical for interference pigments} 2. In groups C09C 1/0015 - C09C 1/0075 it is desirable to add indexing codes relating to the compositional and structural details chosen from groups C09C 2200/00 - C09C 2220/20 | |
U | · Compounds of aluminium {(C09C 1/0009, C09C 1/0015, C09C 1/0078, C09C 1/32 take precedence)} | |
M | · · Clays | |
U | · Carbon | |
M | · · Graphite {( | |
M | · Metallic pigments or fillers {( |
M | Treatment in general of inorganic materials, other than fibrous fillers, to enhance their pigmenting or filling properties |
Project: MP11764 (C09K)
U | Materials not provided for elsewhere NOTE When classifying in groups C09K 3/10 - C09K 3/1028 the properties and uses of the material can be further indexed by using indexing codes chosen from C09K 2003/1034 - C09K 2003/1096 and the chemical nature of the materials can be further indexed by using indexing codes chosen from C09K 2200/00 - C09K 2200/0697 | |
M | · as substitutes for glycerol in its non-chemical uses, e.g. as a base in |
Project: MP11909 (C12M)
U | Apparatus for enzymology or microbiology NOTE This group covers:
| |
M | · Petri |
Project: MP11912 (C23D)
M | ENAMELLING OF, OR APPLYING A VITREOUS LAYER TO, METALS WARNING In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
M | Chemical treatment of the metal surfaces prior to coating |
M | Coating with enamels or vitreous layers |
Project: MP11762 (C23G)
M | CLEANING OR WARNING In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
M | Apparatus for cleaning or pickling metallic material (with organic solvents C23G 5/04 |
Project: RP11760 (C30B)
SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H01L, H10); APPARATUS THEREFOR NOTES 1. In this subclass, the following expressions are used with the meaning indicated:
2. In this subclass:
WARNING In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
Project: RP11761 (E05B)
U | Operating or controlling locks or other fastening devices by electric or magnetic means (electric permutation locks E05B 49/00) | |
U | · {with electric actuators; Constructional features thereof (for vehicles E05B 81/04)} | |
· · {with piezo-electric actuators ( |
Project: RP11761 (F02D)
U | Electrical control of supply of combustible mixture or its constituents (F02D 43/00 takes precedence {; control of engine starters F02N 11/08, electrical control of engine ignition timing F02P 5/145}) | |
U | · Output circuits, e.g. for controlling currents in command coils | |
· · {for controlling piezo-electric injectors ( |
Project: RP11761 (F16F)
U | Suppression of vibrations in systems ({damping of non-rotary systems using inertia effect F16F 7/10; prevention or isolation of vibrations in machine tools B23Q 11/0032; suppression of driveline vibrations in hybrid vehicle transmissions B60W 30/20} ; vehicle seat suspension devices B60N 2/50; {methods or devices for protecting against, or damping of, acoustic waves, e.g. sound G10K 11/16}); Means or arrangements for avoiding or reducing out-of-balance forces, e.g. due to motion ({vibration absorbing or balancing means for aircraft propellers B64C 11/008, for rotorcraft rotors B64C 27/001} ; testing static and dynamic balance of machines or structures G01M 1/00) | |
· {using electro- or magnetostrictive actuation means (generating of mechanical vibrations operating with electrostriction B06B 1/06, with magnetostriction B06B 1/08; vehicle suspension arrangements characterised by use of piezo-electric elements B60G 17/01941 |
Project: RP11760 (F21K)
Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers NOTES 1. In this group, the following expressions are used with the meaning indicated:
2. Semiconductor devices per se, or assemblies thereof, specially adapted for light emission, e.g. for use in light sources (in the sense of Note (1)) are covered by 3. Lighting devices or systems in which light sources are used are covered by subclasses F21L or F21S. 4. When classifying in this group, classification is also made in subclass F21V if detail aspects covered by that subclass are of interest. |
Project: MP11906 (G01B)
M | MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS NOTES 1. This subclass covers measuring of position or displacement in terms of linear or angular dimensions. 2. In this subclass, the groups are distinguished by the 3. Attention is drawn to the Notes following the title of class G01. 4. Machines operated on similar principles to the hand-held devices specified in this subclass are classified with these devices. 5. Measuring arrangements or details thereof covered by two or more of groups G01B 3/00 - G01B 17/00 are classified in group G01B 21/00 if no single other group can be selected as being predominantly applicable. WARNING {In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme.} |
M | NOTE When classifying in this group, mechanical arrangements for measuring specific parameters can be further classified in group G01B 5/00. |
M | Measuring arrangements characterised by the use of mechanical NOTE When classifying in this group, specific mechanical measuring instruments can be further classified in group G01B 3/00. | |
M | · for measuring areas, e.g. |
M | Measuring arrangements characterised by the use of electric or magnetic | |
M | · for measuring areas |
M | NOTE When classifying in this group, optical arrangements for measuring specific parameters can be further classified in group G01B 11/00. |
M | Measuring arrangements characterised by the use of optical NOTE When classifying in this group, specific optical measuring instruments can be further classified in group G01B 9/00. | |
M | · for measuring areas |
M | Measuring arrangements characterised by the use of fluids | |
M | · for measuring areas, e.g. pneumatic |
M | Measuring arrangements characterised by the use of |
M | Measuring arrangements characterised by the use of |
M | Measuring arrangements or details thereof NOTE Measuring arrangements or details thereof covered by two or more of groups G01B 3/00 - G01B 17/00 are classified in this group if no single other group can be selected as being predominantly applicable. | |
M | · for measuring areas |
Project: RP11761 (G01L)
U | Measuring force or stress, in general (measuring force due to impact G01L 5/00) | |
U | · by measuring variations in the magnetic properties of materials resulting from the application of stress | |
· · {by using magnetostrictive means ( |
U | Measuring torque, work, mechanical power, or mechanical efficiency, in general | |
U | · Rotary-transmission dynamometers | |
U | · · wherein the torque-transmitting element comprises a torsionally-flexible shaft | |
U | · · · involving electric or magnetic means for indicating | |
U | · · · · {involving magnetic or electromagnetic means} | |
· · · · · {involving magnetostrictive means ( |
Project: RP11761 (G01N)
U | Investigating or analyzing materials by the use of thermal means (G01N 3/00 - G01N 23/00 take precedence) | |
U | · by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity (calorimeters per se G01K) | |
U | · · on solution, sorption, or a chemical reaction not involving combustion or catalytic oxidation | |
U | · · · {Details not adapted to a particular type of sample} | |
U | · · · · {concerning the measuring means} | |
· · · · · {concerning the temperature responsive elements (measuring temperature or quantity of heat, thermally-sensitive elements G01K |
Project: RP11761 (G01R)
U | Arrangements or instruments for measuring magnetic variables | |
· {Manufacturing aspects; Manufacturing of single devices, i.e. of semiconductor magnetic sensor chips ( |
Project: MP11773 (G04F)
M | TIME-INTERVAL MEASURING (measuring pulse characteristics G01R, e.g. G01R 29/02; in radar or like systems G01S NOTE This subclass covers:
WARNINGS 1. The following IPC groups are not in the CPC scheme. The subject matter for these IPC groups is classified in the following CPC groups:
2. {In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme.} |
M | Apparatus which can be set and started to measure-off predetermined or adjustably-fixed time intervals without driving mechanisms, e.g. egg |
M | Apparatus which can be set and started to measure-off predetermined or adjustably-fixed time intervals with driving mechanisms, e.g. |
M | Apparatus for producing preselected time intervals for use as timing standards (generating clock signals for electric digital computers G06F 1/04 | |
M | · Metronomes | |
U | · using oscillators with electromechanical resonators {producing electric oscillations or timing pulses} | |
M | · · using | |
M | · · · {Constructional details | |
M | · · · · {Trimmer condensators | |
M | · using pulses produced by |
M | Apparatus for measuring unknown time intervals by | |
M | · Means used apart from the time-piece for starting or stopping same |
M | Apparatus for measuring unknown time intervals by electric means | |
M | · by counting pulses or half-cycles of an |
U | Apparatus for measuring unknown time intervals by means not provided for in groups G04F 5/00 - G04F 10/00 | |
U | · using optical means | |
M | · · {Measuring duration of ultra-short light pulses, e.g. in the pico-second range; particular detecting devices therefor (photometry, radiation pyrometry G01J 1/00, G01J 5/00; non-linear optics G02F 1/35 |
Project: MP11769 (G06)
M | COMPUTING; CALCULATING OR COUNTING NOTES 1. This class covers:
2. This class does not cover:
3. In this class, the following terms or expressions are used with the meanings indicated:
4. Attention is drawn to the Notes following the title of section G, especially as regards the definition of the term "variable". |
Project: MP11775 (G06C)
M | DIGITAL COMPUTERS IN WHICH ALL THE COMPUTATION IS EFFECTED MECHANICALLY (score computers for card games A63F 1/18 NOTE WARNING In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
M | Computing aids in which the computing members form at least part of the displayed result and are manipulated directly by hand, e.g. abacuses |
M | Input mechanisms | |
U | · Keyboards | |
M | · · Interlocking devices, e.g. between keys | |
M | · Transfer of data from record carrier to computing mechanisms |
M | Output | |
M | · Arrangements for feeding single sheets or continuous web or tape, e.g. ejection device |
M | Storage mechanisms (mechanical counters with input only to the lowest order |
M | Computing mechanisms; Actuating devices therefor NOTE Group G06C 15/00 takes precedence over groups G06C 15/04 - G06C 15/42 | |
M | · operating on the binary scale NOTE | |
M | · Devices for counting the cycles of operation in division or multiplication | |
U | · Devices for transfer between orders, e.g. tens transfer device | |
M | · · where transfer is | |
M | · · for stepped | |
M | · Arrangements for selection of one out of several counting registers ( |
M | Programming | |
M | · Conditional arrangements for controlling subsequent operating functions, e.g. control arrangement triggered by a function key and depending on the condition of the register (arrangements for selection of one |
M | Driving mechanisms for functional elements NOTE |
Project: MP11922 (G06F)
U | Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity | |
U | · Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer | |
U | · · to assure secure computing or processing of information | |
M | · · · in application-specific integrated circuits [ |
Project: MP11769 (G06Q)
M | NOTE 1. Groups G06Q 10/00 - G06Q 50/00 and G06Q 99/00 only cover systems or methods that involve significant data processing operations, i.e. data processing operations that need to be carried out by a technological, e.g. computing, system or device. Group G06Q 90/00 covers systems or methods that do not involve significant data processing, when both of the following conditions are fulfilled:
2. When classifying in groups G06Q 10/00 - G06Q 40/00, systems or methods that are specially adapted for a specific business sector must also be classified in group G06Q 50/00, when the special adaptation is determined to be novel and non-obvious. 3. In this subclass, the first place priority rule is applied, i.e. at each hierarchical level, in the absence of an indication to the contrary, classification is made in the first appropriate place. 2. When classifying such systems or methods in group G06Q 90/00, additional classification may be made in the most closely related group of this or any other subclass, if this classification gives information about the application of the systems or methods that could be of interest for search. Such non-obligatory classification must be given as "additional information". WARNINGS 1. G06Q has been largely refined to bring most of the former USPC 705 groups into ECLA, prior to CPC launch. Therefore, most of the new G06Q subdivisions are not complete pending reclassification. Users are invited to systematically consult also the hierarchically higher groups, up to the first valid IPC group. For example, while searching in G06Q 50/2053, it is appropriate to consult also G06Q 50/205 and G06Q 50/20 2. In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
Project: MP11922 (G06Q)
U | Payment architectures, schemes or protocols (apparatus for performing or posting payment transactions G07F 7/08, G07F 19/00; electronic cash registers G07G 1/12) | |
U | · Payment architectures | |
M | · · involving self- |
Project: MP11769 (G06Q)
M | Systems or methods specially adapted for administrative, commercial, financial, managerial |
Project: RP11760 (G09G)
ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (lighting in general F21; arrangements for displaying electric variables or waveforms G01R 3/00; devices or arrangements for the control of light beams G02F 1/00; indicating of time by visual means G04B 19/00, G04C 17/00, G04G 9/00; arrangements for transferring data between computers and peripheral equipment G06F 3/00; visible signalling arrangements or devices G08B 5/00; traffic control systems G08G; display, advertising, signs G09F, e.g. static indicating arrangements comprising an association of a number of separate sources or light control cells G09F 9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H01L, H05B 33/12; circuits in pulse counters for indicating the result H03K 21/18; coding, decoding or code conversion, in general H03M; reproducing a picture or pattern using electric signals representing parts thereof and produced by scanning an original H04N) NOTES 1. This subclass covers indicator consoles, i.e. arrangements or circuits for processing control signals to achieve the display, e.g. for the calling up, reception, storage, regeneration, coding, decoding, addressing of control signals. 2. This subclass does not cover the structural details of the indicating devices, such as panels or tubes per se, or assemblies of individual light sources, which are covered by the relevant subclasses, e.g. H01J, H01K, H01L, H10K, G02F, G09F, H05B. 3. Contrary to subclass H04N, in which are classified display devices capable of representing continuous brightness value scales, this subclass is limited to devices using only a discrete number of brightness values, e.g. visible/non-visible. 4. The visual effect may be produced by a luminescent screen scanned by an electron beam, directly by controlled light sources, by projection of light, from controlled light sources onto characters, symbols, or elements thereof drawn on a support, or by electric, magnetic, or acoustic control of the parameters of light rays from an independent source. WARNING In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
Project: MP11922 (G10L)
U | Speaker identification or verification | |
M | · Hidden Markov models [ |
Project: RP11760 (G11C)
STATIC STORES ( NOTES 1. This subclass covers devices or arrangements for storage of digital or analogue information:
2. This subclass does not cover elements not adapted for storage and not provided with such means as referred to in Note (3) below, which elements are classified in the appropriate subclass, e.g. of H01, H03K. 3. In this subclass, the following terms are used with the meaning indicated:
WARNINGS 1. The following IPC groups are not in the CPC scheme. The subject matter for these IPC groups is classified in the following CPC groups:
2. In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
Project: MP11769 (G16)
M | INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS NOTES 1. This
2. In this class, the following terms or expressions are used with the meaning indicated:
|
Project: RP11761 (G21D)
U | Arrangements for direct production of electric energy from fusion or fission reactions (obtaining electric energy from radioactive sources G21H 1/00) | |
· using thermoelectric elements {or thermoionic converters} (structural combination of fuel element with thermoelectric element {or with thermoionic converters} G21C 3/40 {, G21H 1/10} |
Project: RP11761 (H01C)
Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material (consisting of loose powdered or granular material H01C 8/00 {; |
Project: RP11761 (H01F)
MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES (ceramics based on ferrites C04B 35/26; alloys C22C {; NOTE In this subclass, inductances and transformers are regarded as being "for power supply" if they are intended for this purpose even in systems operating at frequencies above 60 cycles/sec. WARNING In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
U | Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties NOTES 1. Attention is drawn to Note (3) after the title of section C, which Note indicates to which version of the periodic table of chemical elements the IPC refers. In this group, the Periodic System used is the 8 group system indicated by Roman numerals in the Periodic Table thereunder. | |
· {showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity, (H01F 1/153, H01F 1/42 and H01F 10/00 take precedence; magnetoresistive sensors G01D 5/16, G01R 33/06; magnetoresistive recording G11B 5/39 | ||
U | · of inorganic materials (H01F 1/44 takes precedence) | |
· · of magnetic semiconductor materials, e.g. CdCr2S4 ( |
U | Superconducting magnets; Superconducting coils {(magnetic resonance assemblies using superconducting coil systems G01R 33/3815)} | |
· {Methods and means for discharging superconductive storage (superconducting alloys C22C; static memories with superconducting elements G11C 11/44; superconducting circuit breakers with contacts H01H 33/004 |
Project: MP11922 (H01G)
U | Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof NOTE WARNING Group H01G 11/00 is incomplete pending reclassification of documents from group H01G 9/155. Groups H01G 9/155 and H01G 11/00 should be considered in order to perform a complete search. | |
U | · Hybrid capacitors WARNING Group H01G 11/04 is incomplete pending reclassification of documents from group H01G 9/155. Groups H01G 9/155 and H01G 11/04 should be considered in order to perform a complete search. | |
M | · · with one of the electrodes allowing ions to be reversibly doped thereinto, e.g. lithium WARNING Group H01G 11/06 is incomplete pending reclassification of documents from group H01G 9/155. Groups H01G 9/155 and H01G 11/06 should be considered in order to perform a complete search. |
Project: RP11761 (H01H)
U | High-tension or heavy-current switches with arc-extinguishing or arc-preventing means | |
U | · {Very heavy-current switches (H01H 33/02 - H01H 33/98 take precedence)} | |
· · {making use of superconducting contacts ( |
Project: MP11922 (H01J)
M | Gas-filled discharge tubes with alternating current induction of the discharge, e.g. NOTES 1. When classifying in this group, classification is made in all appropriate places. 2. In this group, the following term is used with the meaning indicated:
|
Project: RP11760 (H01L)
M | NOTES 1. This subclass is residual to class H10.
4. Attention is drawn to Note (3) after the title of section C, which Note indicates to which version of the periodic table of chemical elements the IPC refers. In this subclass, the Periodic System used is the 8 group system indicated by Roman numerals in the Periodic Table thereunder. WARNINGS 1. The following IPC groups are not in the CPC scheme. The subject matter for these IPC groups is classified in the following CPC groups:
2. {In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme.} |
Project: RP11801 (H01L)
U | Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof | |
U | · Manufacture or treatment of semiconductor devices or of parts thereof | |
U | · · WARNING Groups H01L 21/02104 – H01L 21/02694 are incomplete pending reclassification of documents from groups H01L 21/06, H01L 21/16, and H01L 21/20. Groups H01L 21/02104 – H01L 21/02694, H01L 21/06, H01L 21/20,and H01L 21/16 should be considered in order to perform a complete search. | |
U | · · · {Forming inorganic semiconducting materials on a substrate (for light-sensitive devices H01L 31/00)} WARNINGS 1. Group H01L 21/02365 is incomplete pending reclassification of documents from groups H01L 21/06, H01L 21/16 and H01L 21/20. Groups H01L 21/06, H01L 21/16, and H01L 21/20 should be considered in order to perform a complete search. 2. Groups H01L 21/02365 - H01L 21/02694 are incomplete pending reclassification of documents from groups H01L 21/2018, H01L 21/2022, H01L 21/2026, H01L 21/203, H01L 21/2033, H01L 21/2036, H01L 21/205, H01L 21/2053, H01L 21/2056, H01L 21/208 and H01L 21/2085. All groups listed in this Warning should be considered in order to perform a complete search. | |
U | · · · · {Deposited layers} | |
U | · · · · · {Structure} | |
U | · · · · · · {Microstructure} | |
· · · · · · · {Nanoparticles ( | ||
· · · · · · · {Nanotubes ( | ||
· Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L 31/00 - |
Project: RP11766 (H01L)
U | · Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof ({multistep manufacturing processes of assemblies consisting of a plurality of individual semiconductor or other solid state devices H01L 25/00; } manufacture of assemblies consisting of preformed electrical components H05K 3/00, H05K 13/00) | |
· · Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate ( NOTE Integration processes for the manufacture of devices of the type classified in H01L 27/14 | ||
U | · · · with subsequent division of the substrate into plural individual devices (cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L 21/304) | |
U | · · · · to produce devices, e.g. integrated circuits, each consisting of a plurality of components | |
U | · · · · · the substrate being a semiconductor, using silicon technology (H01L 21/8258 takes precedence) | |
U | · · · · · · Bipolar technology | |
D | H01L 21/8229 | · · · · · · · Memory structures <administratively transferred to H10B 99/00> |
U | · · · · · · Field-effect technology | |
U | · · · · · · · MIS technology {, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type} | |
D | H01L 21/8239 | · · · · · · · · Memory structures <administratively transferred to H10B 99/00> |
Project: RP11801 (H01L)
Details of semiconductor or other solid state devices (H01L 25/00 takes precedence {; structural arrangements for testing or measuring during manufacture or treatment, or for reliability measurements H01L 22/00; arrangements for connecting or disconnecting semiconductor or solid-state bodies, or methods related thereto H01L 24/00; finger print sensors G06V 40/12}) NOTE This group does not cover:
|
Project: RP11761 (H01L)
U | · Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements {; Selection of materials therefor} NOTE Arrangements for connecting or disconnecting semiconductor or other solid state bodies, or methods related thereto, other than those arrangements or methods covered by the following subgroups, are covered by H01L 24/00 | |
U | · · consisting of soldered {or bonded} constructions {(bump connectors H01L 24/01)} | |
U | · · · Leads, {i.e. metallisations or lead-frames} on insulating substrates, {e.g. chip carriers (shape of the substrate H01L 23/13)} | |
U | · · · · {characterised by the materials (materials of the substrates H01L 23/14, of the lead-frames H01L 23/49579)} | |
· · · · · {Carbon, e.g. fullerenes ( | ||
U | · Arrangements for conducting electric current within the device in operation from one component to another {, i.e. interconnections, e.g. wires, lead frames (optical interconnections G02B 6/00)} | |
U | · · including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body | |
U | · · · characterised by the materials | |
U | · · · · {Conductive materials} | |
· · · · · {containing carbon, e.g. fullerenes ( |
Project: RP11801 (H01L)
{Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto} NOTES 1. This group does not cover:
2. In this group the following indexing codes are used : H01L 24/00, H01L 2224/00, H01L 2924/00, and subgroups thereof |
Project: RP11944 (H01L)
M | Assemblies consisting of a plurality of individual semiconductor or other solid state devices {; Multistep manufacturing processes thereof} (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; photovoltaic modules or arrays of photovoltaic cells H01L 31/042 {; panels or arrays of photo electrochemical cells H01G 9/2068}) NOTE {This group does not cover:
| |
M | · all the devices being of a type provided for in the same subgroup of groups H01L 27/00 - | |
C | · · the devices not having separate containers WARNING Group H01L 25/04 is impacted by reclassification into groups H10K 19/00, H10K 39/10, H10K 59/90, H10K 59/95 and H10K 65/00. All groups listed in this Warning should be considered in order to perform a complete search. | |
D | H01L 25/046 | · · · {the devices being of a type provided for in group H01L 51/00} <administratively transferred to H10K 19/901> |
D | H01L 25/047 | · · · · {the devices being of a type provided for in group H01L 51/42, e.g. photovoltaic modules based on organic solar cells} <administratively transferred to H10K 39/601> |
D | H01L 25/048 | · · · · {the devices being of a type provided for in group H01L 51/50, e.g. assembly of organic light emitting devices} <administratively transferred to H10K 59/90> |
C | · · · the devices being of a type provided for in group H01L 27/00 NOTE WARNING Group H01L 25/065 is impacted by reclassification into group H10B 80/00. Groups H01L 25/065 and H10B 80/00 should be considered in order to perform a complete search. | |
C | · · · · {the devices being arranged next and on each other, i.e. mixed assemblies} WARNING Group H01L 25/0652 is impacted by reclassification into group H10B 80/00. Groups H01L 25/0652 and H10B 80/00 should be considered in order to perform a complete search. | |
C | · · · · {the devices being arranged next to each other} WARNING Group H01L 25/0655 is impacted by reclassification into group H10B 80/00. Groups H01L 25/0655 and H10B 80/00 should be considered in order to perform a complete search. | |
C | · · · · {Stacked arrangements of devices} WARNING Group H01L 25/0657 is impacted by reclassification into group H10B 80/00. Groups H01L 25/0657 and H10B 80/00 should be considered in order to perform a complete search. | |
C | · the devices being of types provided for in two or more different main groups of groups H01L 27/00 - WARNING Groups H01L 25/16, H01L 25/162, H01L 25/165 and H01L 25/167 are impacted by reclassification into groups H10B 80/00, H10K 39/10, H10K 59/90, H10K 59/95, H10N 19/00, H10N 39/00, H10N 59/00, H10N 69/00, H10N 79/00 and H10N 89/00. All groups listed in this Warning should be considered in order to perform a complete search. | |
C | · · {the devices being mounted on two or more different substrates} | |
C | · · {Containers} | |
C | · · {comprising optoelectronic devices, e.g. LED, photodiodes} | |
C | · the devices being of types provided for in two or more different subgroups of the same main group of groups H01L 27/00 - WARNING Group H01L 25/18 is impacted by reclassification into groups H10B 80/00, H10K 19/00, H10K 39/10, H10K 59/90, H10K 59/95, H10K 65/00, H10N 19/00, H10N 39/00, H10N 59/00, H10N 69/00, H10N 79/00 and H10N 89/00. All groups listed in this Warning should be considered in order to perform a complete search. |
Project: RP11766 , RP11801 (H01L)
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate (details thereof H01L 23/00, H01L 29/00 - NOTE 1. In this group 2. When classifying in this group, subject matter relating to electrically programmable read-only memories is classified in group H01L 27/115, irrespective of the last place priority rule. |
Project: RP11761 (H01L)
· comprising only passive thin-film or thick-film elements formed on a common insulating substrate {(passive two-terminal components without a potential-jump or surface barrier for integrated circuits, details thereof and multistep manufacturing processes therefor H01L 28/00)} NOTE In groups H01L 27/01 - H01L 27/26, in the absence of an indication to the contrary, classification is made in the last appropriate place. |
Project: RP11766 (H01L)
U | · including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier | |
U | · · the substrate being a semiconductor body | |
C | · · · including a plurality of individual components in a repetitive configuration WARNING Group H01L 27/10 is impacted by reclassification into group H10B 99/10. Groups H01L 27/10 and H10B 99/10 should be considered in order to perform a complete search. | |
C | · · · · {including resistors or capacitors only} WARNING Group H01L 27/101 is impacted by reclassification into group H10B 99/14. Groups H01L 27/101 and H10B 99/14 should be considered in order to perform a complete search. | |
C | · · · · including bipolar components WARNING Group H01L 27/102 is impacted by reclassification into group H10B 99/00. Groups H01L 27/102 and H10B 99/00 should be considered in order to perform a complete search. | |
C | · · · · · {including diodes only} WARNING Group H01L 27/1021 is impacted by reclassification into group H10B 99/16. Groups H01L 27/1021 and H10B 99/16 should be considered in order to perform a complete search. | |
C | · · · · · {including bipolar transistors} WARNING Group H01L 27/1022 is impacted by reclassification into group H10B 99/00. Groups H01L 27/1022 and H10B 99/00 should be considered in order to perform a complete search. | |
D | H01L 27/1023 | · · · · · · {Bipolar dynamic random access memory structures} <administratively transferred to H10B 12/10> |
D | H01L 27/1024 | · · · · · · {Arrays of single bipolar transistors only, e.g. read only memory structures} <administratively transferred to H10B 20/10> |
D | H01L 27/1025 | · · · · · · {Static bipolar memory cell structures} <administratively transferred to H10B 10/10> |
D | H01L 27/1026 | · · · · · · {Bipolar electrically programmable memory structures (using fuses H01L 23/525)} <administratively transferred to H10B 69/00> |
C | · · · · · {Thyristors} WARNING Group H01L 27/1027 is impacted by reclassification into groups H10B 10/10, H10B 12/10, H10B 20/10, H10B 69/00 and H10B 99/20. All groups listed in this Warning should be considered in order to perform a complete search. | |
C | · · · · · {Double base diodes} WARNING Group H01L 27/1028 is impacted by reclassification into groups H10B 10/10, H10B 12/10, H10B 20/10, H10B 69/00 and H10B 99/20. All groups listed in this Warning should be considered in order to perform a complete search. | |
C | · · · · including field-effect components NOTE In this group and its subgroups classification is made in any appropriate place WARNING Group H01L 27/105 is impacted by reclassification into group H10B 99/22. Groups H01L 27/105 and H10B 99/22 should be considered in order to perform a complete search. | |
D | H01L 27/1052 | · · · · · {Memory structures and multistep manufacturing processes therefor not provided for in groups H01L 27/1055 - H01L 27/112} <administratively transferred to H10B 99/00> |
D | H01L 27/108 | · · · · · Dynamic random access memory structures <administratively transferred to H10B 12/00> |
D | H01L 27/10802 | · · · · · · {comprising floating-body transistors, e.g. floating-body cells} <administratively transferred to H10B 12/20> |
D | H01L 27/10805 | · · · · · · {with one-transistor one-capacitor memory cells} <administratively transferred to H10B 12/30> |
D | H01L 27/10808 | · · · · · · · {the storage electrode stacked over transistor} <administratively transferred to H10B 12/31> |
D | H01L 27/10811 | · · · · · · · · {with bit line higher than capacitor} <administratively transferred to H10B 12/312> |
D | H01L 27/10814 | · · · · · · · · {with capacitor higher than bit line level} <administratively transferred to H10B 12/315> |
D | H01L 27/10817 | · · · · · · · · {the storage electrode having multiple wings} <administratively transferred to H10B 12/318> |
D | H01L 27/1082 | · · · · · · · {the capacitor extending under transfer transistor area} <administratively transferred to H10B 12/33> |
D | H01L 27/10823 | · · · · · · · {the transistor having a trench structure in the substrate} <administratively transferred to H10B 12/34> |
D | H01L 27/10826 | · · · · · · · {the transistor being of the FinFET type} <administratively transferred to H10B 12/36> |
D | H01L 27/10829 | · · · · · · · {the capacitor being in a substrate trench} <administratively transferred to H10B 12/37> |
D | H01L 27/10832 | · · · · · · · · {the capacitor extending under or around transfer transistor area} <administratively transferred to H10B 12/373> |
D | H01L 27/10835 | · · · · · · · · {having storage electrode extension stacked over transistor} <administratively transferred to H10B 12/377> |
D | H01L 27/10838 | · · · · · · · {the capacitor and the transistor being in one trench} <administratively transferred to H10B 12/39> |
D | H01L 27/10841 | · · · · · · · · {the transistor being vertical} <administratively transferred to H10B 12/395> |
D | H01L 27/10844 | · · · · · · {Multistep manufacturing methods} <administratively transferred to H10B 12/01> |
D | H01L 27/10847 | · · · · · · · {for structures comprising one transistor one-capacitor memory cells} <administratively transferred to H10B 12/02> |
D | H01L 27/1085 | · · · · · · · · {with at least one step of making the capacitor or connections thereto} <administratively transferred to H10B 12/03> |
D | H01L 27/10852 | · · · · · · · · · {the capacitor extending over the access transistor} <administratively transferred to H10B 12/033> |
D | H01L 27/10855 | · · · · · · · · · · {with at least one step of making a connection between transistor and capacitor, e.g. plug} <administratively transferred to H10B 12/0335> |
D | H01L 27/10858 | · · · · · · · · · {the capacitor extending under the access transistor area} <administratively transferred to H10B 12/036> |
D | H01L 27/10861 | · · · · · · · · · {the capacitor being in a substrate trench} <administratively transferred to H10B 12/038> |
D | H01L 27/10864 | · · · · · · · · · · {in combination with a vertical transistor} <administratively transferred to H10B 12/0383> |
D | H01L 27/10867 | · · · · · · · · · · {with at least one step of making a connection between transistor and capacitor, e.g. buried strap} <administratively transferred to H10B 12/0385> |
D | H01L 27/1087 | · · · · · · · · · · {with at least one step of making the trench} <administratively transferred to H10B 12/0387> |
D | H01L 27/10873 | · · · · · · · · {with at least one step of making the transistor} <administratively transferred to H10B 12/05> |
D | H01L 27/10876 | · · · · · · · · · {the transistor having a trench structure in the substrate (vertical transistor in combination with a capacitor formed in a substrate trench H01L 27/10864)} <administratively transferred to H10B 12/053> |
D | H01L 27/10879 | · · · · · · · · · {the transistor being of the FinFET type} <administratively transferred to H10B 12/056> |
D | H01L 27/10882 | · · · · · · · · {with at least one step of making a data line} <administratively transferred to H10B 12/48> |
D | H01L 27/10885 | · · · · · · · · · {with at least one step of making a bit line} <administratively transferred to H10B 12/482> |
D | H01L 27/10888 | · · · · · · · · · {with at least one step of making a bit line contact} <administratively transferred to H10B 12/485> |
D | H01L 27/10891 | · · · · · · · · · {with at least one step of making a word line} <administratively transferred to H10B 12/488> |
D | H01L 27/10894 | · · · · · · · {with simultaneous manufacture of periphery and memory cells} <administratively transferred to H10B 12/09> |
D | H01L 27/10897 | · · · · · · {Peripheral structures} <administratively transferred to H10B 12/50> |
D | H01L 27/11 | · · · · · Static random access memory structures <administratively transferred to H10B 10/00> |
D | H01L 27/1104 | · · · · · · {the load element being a MOSFET transistor} <administratively transferred to H10B 10/12> |
D | H01L 27/1108 | · · · · · · · {the load element being a thin film transistor} <administratively transferred to H10B 10/125> |
D | H01L 27/1112 | · · · · · · {the load element being a resistor (resistors for integrated circuits H01L 28/20, H01L 29/8605)} <administratively transferred to H10B 10/15> |
D | H01L 27/1116 | · · · · · · {Peripheral circuit region} <administratively transferred to H10B 10/18> |
D | H01L 27/112 | · · · · · Read-only memory structures {[ROM] and multistep manufacturing processes therefor} <administratively transferred to H10B 20/00> |
D | H01L 27/11206 | · · · · · · {Programmable ROM [PROM], e.g. memory cells comprising a transistor and a fuse or an antifuse} <administratively transferred to H10B 20/20> |
D | H01L 27/11213 | · · · · · · {ROM only} <administratively transferred to H10B 20/27> |
D | H01L 27/1122 | · · · · · · · {with source and drain on the same level, e.g. lateral transistors} <administratively transferred to H10B 20/30> |
D | H01L 27/11226 | · · · · · · · · {Source or drain contact programmed} <administratively transferred to H10B 20/34> |
D | H01L 27/11233 | · · · · · · · · {Gate programmed, e.g. different gate material or no gate} <administratively transferred to H10B 20/36> |
D | H01L 27/1124 | · · · · · · · · · {Gate contact programmed} <administratively transferred to H10B 20/363> |
D | H01L 27/11246 | · · · · · · · · · {Gate dielectric programmed, e.g. different thickness} <administratively transferred to H10B 20/367> |
D | H01L 27/11253 | · · · · · · · · {Doping programmed, e.g. mask ROM} <administratively transferred to H10B 20/38> |
D | H01L 27/1126 | · · · · · · · · · {Entire channel doping programmed} <administratively transferred to H10B 20/383> |
D | H01L 27/11266 | · · · · · · · · · {Source or drain doping programmed} <administratively transferred to H10B 20/387> |
D | H01L 27/11273 | · · · · · · · {with source and drain on different levels, e.g. vertical channel} <administratively transferred to H10B 20/40> |
D | H01L 27/1128 | · · · · · · · {with transistors on different levels, e.g. 3D ROM} <administratively transferred to H10B 20/50> |
D | H01L 27/11286 | · · · · · · {Peripheral circuit regions} <administratively transferred to H10B 20/60> |
D | H01L 27/11293 | · · · · · · · {of memory structures of the ROM-only type} <administratively transferred to H10B 20/65> |
D | H01L 27/115 | · · · · · · Electrically programmable read-only memories; Multistep manufacturing processes therefor <administratively transferred to H10B 69/00> |
D | H01L 27/11502 | · · · · · · · with ferroelectric memory capacitors <administratively transferred to H10B 53/00> |
D | H01L 27/11504 | · · · · · · · · characterised by the top-view layout <administratively transferred to H10B 53/10> |
D | H01L 27/11507 | · · · · · · · · characterised by the memory core region <administratively transferred to H10B 53/30> |
D | H01L 27/11509 | · · · · · · · · characterised by the peripheral circuit region <administratively transferred to H10B 53/40> |
D | H01L 27/11512 | · · · · · · · · characterised by the boundary region between the core and peripheral circuit regions <administratively transferred to H10B 53/50> |
D | H01L 27/11514 | · · · · · · · · characterised by the three-dimensional arrangements, e.g. with cells on different height levels <administratively transferred to H10B 53/20> |
D | H01L 27/11517 | · · · · · · · with floating gate <administratively transferred to H10B 41/00> |
D | H01L 27/11519 | · · · · · · · · characterised by the top-view layout <administratively transferred to H10B 41/10> |
D | H01L 27/11521 | · · · · · · · · characterised by the memory core region (three-dimensional arrangements H01L 27/11551) <administratively transferred to H10B 41/30> |
D | H01L 27/11524 | · · · · · · · · · with cell select transistors, e.g. NAND <administratively transferred to H10B 41/35> |
D | H01L 27/11526 | · · · · · · · · characterised by the peripheral circuit region <administratively transferred to H10B 41/40> |
D | H01L 27/11529 | · · · · · · · · · of memory regions comprising cell select transistors, e.g. NAND <administratively transferred to H10B 41/41> |
D | H01L 27/11531 | · · · · · · · · · Simultaneous manufacturing of periphery and memory cells <administratively transferred to H10B 41/42> |
D | H01L 27/11534 | · · · · · · · · · · including only one type of peripheral transistor <administratively transferred to H10B 41/43> |
D | H01L 27/11536 | · · · · · · · · · · · with a control gate layer also being used as part of the peripheral transistor <administratively transferred to H10B 41/44> |
D | H01L 27/11539 | · · · · · · · · · · · with an inter-gate dielectric layer also being used as part of the peripheral transistor <administratively transferred to H10B 41/46> |
D | H01L 27/11541 | · · · · · · · · · · · with a floating-gate layer also being used as part of the peripheral transistor <administratively transferred to H10B 41/47> |
D | H01L 27/11543 | · · · · · · · · · · · with a tunnel dielectric layer also being used as part of the peripheral transistor <administratively transferred to H10B 41/48> |
D | H01L 27/11546 | · · · · · · · · · · including different types of peripheral transistor <administratively transferred to H10B 41/49> |
D | H01L 27/11548 | · · · · · · · · characterised by the boundary region between the core and peripheral circuit regions <administratively transferred to H10B 41/50> |
D | H01L 27/11551 | · · · · · · · · characterised by three-dimensional arrangements, e.g. with cells on different height levels <administratively transferred to H10B 41/20> |
D | H01L 27/11553 | · · · · · · · · · with source and drain on different levels, e.g. with sloping channels <administratively transferred to H10B 41/23> |
D | H01L 27/11556 | · · · · · · · · · · the channels comprising vertical portions, e.g. U-shaped channels <administratively transferred to H10B 41/27> |
D | H01L 27/11558 | · · · · · · · · the control gate being a doped region, e.g. single-poly memory cells <administratively transferred to H10B 41/60> |
D | H01L 27/1156 | · · · · · · · · the floating gate being an electrode shared by two or more components <administratively transferred to H10B 41/70> |
D | H01L 27/11563 | · · · · · · · with charge-trapping gate insulators, e.g. MNOS or NROM <administratively transferred to H10B 43/00> |
D | H01L 27/11565 | · · · · · · · · characterised by the top-view layout <administratively transferred to H10B 43/10> |
D | H01L 27/11568 | · · · · · · · · characterised by the memory core region (three-dimensional arrangements H01L 27/11578) <administratively transferred to H10B 43/30> |
D | H01L 27/1157 | · · · · · · · · · with cell select transistors, e.g. NAND <administratively transferred to H10B 43/35> |
D | H01L 27/11573 | · · · · · · · · characterised by the peripheral circuit region <administratively transferred to H10B 43/40> |
D | H01L 27/11575 | · · · · · · · · characterised by the boundary region between the core and peripheral circuit regions <administratively transferred to H10B 43/50> |
D | H01L 27/11578 | · · · · · · · · characterised by three-dimensional arrangements, e.g. with cells on different height levels <administratively transferred to H10B 43/20> |
D | H01L 27/1158 | · · · · · · · · · with source and drain on different levels, e.g. with sloping channels <administratively transferred to H10B 43/23> |
D | H01L 27/11582 | · · · · · · · · · · the channels comprising vertical portions, e.g. U-shaped channels <administratively transferred to H10B 43/27> |
D | H01L 27/11585 | · · · · · · · with the gate electrodes comprising a layer used for its ferroelectric memory properties, e.g. metal-ferroelectric-semiconductor [MFS] or metal-ferroelectric-metal-insulator-semiconductor [MFMIS] <administratively transferred to H10B 51/00> |
D | H01L 27/11587 | · · · · · · · · characterised by the top-view layout <administratively transferred to H10B 51/10> |
D | H01L 27/1159 | · · · · · · · · characterised by the memory core region <administratively transferred to H10B 51/30> |
D | H01L 27/11592 | · · · · · · · · characterised by the peripheral circuit region <administratively transferred to H10B 51/40> |
D | H01L 27/11595 | · · · · · · · · characterised by the boundary region between core and peripheral circuit regions <administratively transferred to H10B 51/50> |
D | H01L 27/11597 | · · · · · · · · characterised by three-dimensional arrangements, e.g. cells on different height levels <administratively transferred to H10B 51/20> |
Project: RP11761 (H01L)
D | H01L 27/16 | · including thermoelectric components with or without a junction of dissimilar materials; including thermomagnetic components (using the Peltier effect only for cooling of semiconductor or other solid state devices H01L 23/38) <administratively transferred to H10N 19/00> |
D | H01L 27/18 | · including components exhibiting superconductivity <administratively transferred to H10N 69/00> |
D | H01L 27/20 | · including piezo-electric components; including electrostrictive components; including magnetostrictive components <administratively transferred to H10N 39/00> |
Project: RP11945 (H01L)
D | H01L 27/22 | · including components using galvano-magnetic effects, e.g. Hall effects; using similar magnetic field effects <administratively transferred to H10B 61/00 and H10N 59/00 simultaneously> |
D | H01L 27/222 | · · {Magnetic non-volatile memory structures, e.g. MRAM} <administratively transferred to H10B 61/00> |
D | H01L 27/224 | · · · {comprising two-terminal components, e.g. diodes, MIM elements} <administratively transferred to H10B 61/10> |
D | H01L 27/226 | · · · {comprising multi-terminal components, e.g. transistors} <administratively transferred to H10B 61/20> |
D | H01L 27/228 | · · · · {of the field-effect transistor type} <administratively transferred to H10B 61/22> |
D | H01L 27/24 | · including solid state components for rectifying, amplifying or switching without a potential-jump barrier or surface barrier, {e.g. resistance switching non-volatile memory structures} <administratively transferred to H10B 63/00> |
D | H01L 27/2409 | · · {comprising two-terminal selection components, e.g. diodes} <administratively transferred to H10B 63/20> |
D | H01L 27/2418 | · · · {of the metal-insulator-metal type} <administratively transferred to H10B 63/22> |
D | H01L 27/2427 | · · · {of the Ovonic threshold switching type} <administratively transferred to H10B 63/24> |
D | H01L 27/2436 | · · {comprising multi-terminal selection components, e.g. transistors} <administratively transferred to H10B 63/30> |
D | H01L 27/2445 | · · · {of the bipolar type} <administratively transferred to H10B 63/32> |
D | H01L 27/2454 | · · · {of the vertical channel field-effect transistor type} <administratively transferred to H10B 63/34> |
D | H01L 27/2463 | · · {Arrangements comprising multiple bistable or multistable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays, details of the horizontal layout} <administratively transferred to H10B 63/80> |
D | H01L 27/2472 | · · · {the switching components having a common active material layer} <administratively transferred to H10B 63/82> |
D | H01L 27/2481 | · · · {arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays, details of the vertical layout} <administratively transferred to H10B 63/84> |
D | H01L 27/249 | · · · · {the switching components being connected to a common vertical conductor} <administratively transferred to H10B 63/845> |
Project: RP11761 (H01L)
D | H01L 27/26 | · including bulk negative resistance effect components <administratively transferred to H10N 89/00> |
D | H01L 27/265 | · · {Gunn effect devices} <administratively transferred to H10N 89/02> |
Project: RP11801 (H01L)
D | H01L 27/28 | · including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part <administratively transferred to H10K 19/00> |
D | H01L 27/281 | · · {Integrated circuits having a three-dimensional layout} <administratively transferred to H10K 19/201> |
D | H01L 27/283 | · · {comprising components of the field-effect type} <administratively transferred to H10K 19/10> |
D | H01L 27/285 | · · {Integrated circuits with a common active layer, e.g. cross point devices} <administratively transferred to H10K 19/202> |
D | H01L 27/286 | · · {with an active region comprising an inorganic semiconductor} <administratively transferred to H10K 19/20> |
D | H01L 27/288 | · · {Combination of organic light sensitive components with organic light emitting components, e.g. optocoupler} <administratively transferred to H10K 65/00> |
D | H01L 27/30 | · · with components specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; with components specially adapted for either the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation {(combination of organic light sensitive components with organic light emitting components, e.g. optocoupler H01L 27/288)} <administratively transferred to H10K 39/00> |
D | H01L 27/301 | · · · {Energy conversion devices} <administratively transferred to H10K 39/10> |
D | H01L 27/302 | · · · · {comprising multiple junctions, e.g. tandem cells} <administratively transferred to H10K 30/57> |
D | H01L 27/304 | · · · · {in form of a fiber or a tube, e.g. photovoltaic fibers} <administratively transferred to H10K 30/53> |
D | H01L 27/305 | · · · {Devices controlled by radiation} <administratively transferred to H10K 39/30> |
D | H01L 27/307 | · · · · {Imager structures} <administratively transferred to H10K 39/32> |
D | H01L 27/308 | · · · · {Devices specially adapted for detecting X-ray radiation (measuring X-radiation G01T 1/00)} <administratively transferred to H10K 39/36> |
D | H01L 27/32 | · · with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED] {(combination of organic light sensitive components with organic light emitting components, e.g. optocoupler H01L 27/288)} <administratively transferred to H10K 59/00> |
D | H01L 27/3202 | · · · {OLEDs electrically connected in parallel} <administratively transferred to H10K 59/84> |
D | H01L 27/3204 | · · · {OLEDs electrically connected in series} <administratively transferred to H10K 59/86> |
D | H01L 27/3206 | · · · {Multi-colour light emission} <administratively transferred to H10K 59/30> |
D | H01L 27/3209 | · · · · {using stacked OLED} <administratively transferred to H10K 59/32> |
D | H01L 27/3211 | · · · · {using RGB sub-pixels} <administratively transferred to H10K 59/35> |
D | H01L 27/3213 | · · · · · {using more than three sub-pixels, e.g. RGBW} <administratively transferred to H10K 59/351> |
D | H01L 27/3216 | · · · · · {the areas of RGB sub-pixels being different} <administratively transferred to H10K 59/352> |
D | H01L 27/3218 | · · · · · {characterised by the geometrical arrangement of the RGB sub-pixels} <administratively transferred to H10K 59/353> |
D | H01L 27/322 | · · · · {using colour filters or colour changing media [CCM]} <administratively transferred to H10K 59/38> |
D | H01L 27/3223 | · · · {combined with dummy elements, i.e. non-functional features} <administratively transferred to H10K 59/88> |
D | H01L 27/3225 | · · · {OLED integrated with another component (H01L 27/3223 takes precedence)} <administratively transferred to H10K 59/00> |
D | H01L 27/3227 | · · · · {the other component being a light sensitive element, e.g. inorganic solar cell, inorganic photodiode (H01L 27/288 takes precedence)} <administratively transferred to H10K 59/60> |
D | H01L 27/323 | · · · · {the other component being a touch screen} <administratively transferred to H10K 59/40> |
D | H01L 27/3232 | · · · · {the other component being a light modulating element, e.g. electrochromic element, photochromic element, liquid crystal element} <administratively transferred to H10K 59/50> |
D | H01L 27/3234 | · · · · {the other component being an imager structure (H01L 27/146 takes precedence)} <administratively transferred to H10K 59/65> |
D | H01L 27/3237 | · · · {Displays not provided for in group H01L 27/3241 and subgroups, e.g. segment-type displays} <administratively transferred to H10K 59/10> |
D | H01L 27/3239 | · · · · {Light emitting logos} <administratively transferred to H10K 59/221> |
D | H01L 27/3241 | · · · {Matrix-type displays} <administratively transferred to H10K 59/10> |
D | H01L 27/3244 | · · · · {Active matrix displays} <administratively transferred to H10K 59/12> |
D | H01L 27/3246 | · · · · · {Pixel defining structures, e.g. banks} <administratively transferred to H10K 59/122> |
D | H01L 27/3248 | · · · · · {Connection of the pixel electrode to the TFT} <administratively transferred to H10K 59/123> |
D | H01L 27/3251 | · · · · · {Double substrate, i.e. with OLED and TFT on different substrates} <administratively transferred to H10K 59/127> |
D | H01L 27/3253 | · · · · · · {Electrical connection of the two substrates} <administratively transferred to H10K 59/1275> |
D | H01L 27/3255 | · · · · · {Chiplets} <administratively transferred to H10K 59/129> |
D | H01L 27/3258 | · · · · · {Insulating layers formed between TFT elements and OLED elements} <administratively transferred to H10K 59/124> |
D | H01L 27/326 | · · · · · {special geometry or disposition of pixel-elements} <administratively transferred to H10K 59/121> |
D | H01L 27/3262 | · · · · · · {of TFT} <administratively transferred to H10K 59/1213> |
D | H01L 27/3265 | · · · · · · {of capacitor} <administratively transferred to H10K 59/1216> |
D | H01L 27/3267 | · · · · · {Dual display, i.e. having two independent displays} <administratively transferred to H10K 59/128> |
D | H01L 27/3269 | · · · · · {Including photosensors to control luminance} <administratively transferred to H10K 59/13> |
D | H01L 27/3272 | · · · · · {Shielding, e.g. of TFT} <administratively transferred to H10K 59/126> |
D | H01L 27/3274 | · · · · · {including organic thin film transistors [OTFT]} <administratively transferred to H10K 59/125> |
D | H01L 27/3276 | · · · · · {Wiring lines} <administratively transferred to H10K 59/131> |
D | H01L 27/3279 | · · · · · · {comprising structures specially adapted for lowering the resistance} <administratively transferred to H10K 59/1315> |
D | H01L 27/3281 | · · · · {Passive matrix displays} <administratively transferred to H10K 59/17> |
D | H01L 27/3283 | · · · · · {including banks or shadow masks} <administratively transferred to H10K 59/173> |
D | H01L 27/3286 | · · · · · {Dual display, i.e. having two independent displays} <administratively transferred to H10K 59/176> |
D | H01L 27/3288 | · · · · · {Wiring lines} <administratively transferred to H10K 59/179> |
D | H01L 27/329 | · · · · · · {comprising structures specially adapted for lowering the resistance} <administratively transferred to H10K 59/1795> |
D | H01L 27/3293 | · · · · {Tiled displays} <administratively transferred to H10K 59/18> |
Project: RP11761 , RP11801 (H01L)
Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof {; NOTE In this main group, classification is made both in groups H01L 29/02 - H01L 29/51 and in groups H01L 29/66 - H01L 29/94 if both of these sets of groups are relevant. |
Project: RP11801 (H01L)
U | · Semiconductor bodies {; Multistep manufacturing processes therefor} | |
U | · · characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions {; characterised by the concentration or distribution of impurities within semiconductor regions} | |
U | · · · {characterised by the shape of the body} | |
U | · · · · {the shape of the body defining a nanostructure (nanotechnology per se B82B)} | |
· · · · · {Nanowires or nanotubes ( | ||
U | · · characterised by the materials of which they are formed | |
· · · including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L 29/16, H01L 29/18, H01L 29/20, H01L 29/22 ( | ||
U | · Electrodes {; Multistep manufacturing processes therefor} | |
U | · · characterised by their shape, relative sizes or dispositions | |
· · · {Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires ( |
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof ( | ||
U | · Details | |
· · Containers; Encapsulations {, e.g. encapsulation of photodiodes} (for photovoltaic devices H01L 31/048 | ||
U | · characterised by their semiconductor bodies | |
U | · · characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions | |
U | · · · {comprising a quantum structures} | |
· · · · {the quantum structure being quantum wires, or nanorods ( |
Project: MP11922 (H01L)
M | Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof ( NOTE 1. This group covers light 2. In this group, the first place priority rule is applied, i.e. at each hierarchical level, in the absence of an indication to the contrary, classification is made in the first appropriate place. |
Project: RP11761 (H01L)
D | H01L 35/00 | Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) <administratively transferred to H10N 10/00> |
D | H01L 35/02 | · Details <administratively transferred to H10N 10/80> |
D | H01L 35/04 | · · Structural details of the junction; Connections of leads <administratively transferred to H10N 10/81> |
D | H01L 35/06 | · · · detachable, e.g. using a spring <administratively transferred to H10N 10/813> |
D | H01L 35/08 | · · · non-detachable, e.g. cemented, sintered, soldered {, e.g. thin films} <administratively transferred to H10N 10/817> |
D | H01L 35/10 | · · · Connections of leads <administratively transferred to H10N 10/82> |
D | H01L 35/12 | · Selection of the material for the legs of the junction <administratively transferred to H10N 10/85> |
D | H01L 35/14 | · · using inorganic compositions <administratively transferred to H10N 10/851> |
D | H01L 35/16 | · · · comprising tellurium or selenium or sulfur <administratively transferred to H10N 10/852> |
D | H01L 35/18 | · · · comprising arsenic or antimony or bismuth (H01L 35/16 takes precedence), {e.g. AIIIBV compounds} <administratively transferred to H10N 10/853> |
D | H01L 35/20 | · · · comprising metals only (H01L 35/16, H01L 35/18 take precedence) <administratively transferred to H10N 10/854> |
D | H01L 35/22 | · · · comprising compounds containing boron, carbon, oxygen or nitrogen {or germanium or silicon, e.g. superconductors} <administratively transferred to H10N 10/855> |
D | H01L 35/225 | · · · · {Superconducting materials} <administratively transferred to H10N 10/8552> |
D | H01L 35/24 | · · using organic compositions <administratively transferred to H10N 10/856> |
D | H01L 35/26 | · · using compositions changing continuously or discontinuously inside the material <administratively transferred to H10N 10/857> |
D | H01L 35/28 | · operating with Peltier or Seebeck effect only <administratively transferred to H10N 10/10> |
D | H01L 35/30 | · · characterised by the heat-exchanging means at the junction <administratively transferred to H10N 10/13> |
D | H01L 35/32 | · · characterised by the structure or configuration of the cell or thermocouple forming the device {including details about housing, insulation, geometry or module} <administratively transferred to H10N 10/17> |
D | H01L 35/325 | · · · {Cascades of thermocouples} <administratively transferred to H10N 19/101> |
D | H01L 35/34 | · Processes or apparatus specially adapted for peculiar to the manufacture or treatment of these devices or of parts thereof <administratively transferred to H10N 10/01> |
D | H01L 37/00 | Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) <administratively transferred to H10N 15/00> |
D | H01L 37/02 | · using thermal change of dielectric constant, e.g. working above and below Curie point {, e.g. pyroelectric devices} <administratively transferred to H10N 15/10> |
D | H01L 37/025 | · · {Selection of materials} <administratively transferred to H10N 15/15> |
D | H01L 37/04 | · using thermal change of magnetic permeability, e.g. working above and below the Curie point {, e.g. pyromagnetic devices} <administratively transferred to H10N 15/20> |
D | H01L 39/00 | Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; {light detection G01J, G02F 2/00; application to memories G11C 11/44, G11C 15/00, G11C 19/32} ; superconducting conductors cables or transmission lines H01B 12/00; {microwaves H01P 7/00, H01P 11/00} ; superconductive coils or windings H01F; amplifiers using superconductivity H03F 19/00; {impulse generators and logic circuits H03K 3/38, H03K 17/92, H03K 19/195; lasers H01S 3/00, H01S 5/00}) NOTE In this group, in the absence of an indication to the contrary, an invention is classified in the last appropriate place <administratively transferred to H10N 60/00> |
D | H01L 39/005 | · {Alleged superconductivity} <administratively transferred to H10N 60/99> |
D | H01L 39/02 | · Details <administratively transferred to H10N 60/80> |
D | H01L 39/025 | · · {for Josephson devices} <administratively transferred to H10N 60/805> |
D | H01L 39/04 | · · Containers; Mountings <administratively transferred to H10N 60/81> |
D | H01L 39/045 | · · · {for Josephson devices} <administratively transferred to H10N 60/815> |
D | H01L 39/06 | · · characterised by the current path <administratively transferred to H10N 60/82> |
D | H01L 39/08 | · · characterised by the shape of the element <administratively transferred to H10N 60/83> |
D | H01L 39/10 | · · characterised by the means for switching {between superconductive and normal states} <administratively transferred to H10N 60/84> |
D | H01L 39/12 | · · characterised by the material <administratively transferred to H10N 60/85> |
D | H01L 39/121 | · · · {Organic materials} <administratively transferred to H10N 60/851> |
D | H01L 39/123 | · · · · {Fullerene superconductors, e.g. soccerball-shaped allotrope of carbon, e.g. C60, C94 (fullerenes in general C07C 13/00)} <administratively transferred to H10N 60/853> |
D | H01L 39/125 | · · · {Ceramic materials} <administratively transferred to H10N 60/855> |
D | H01L 39/126 | · · · · {comprising copper oxide} <administratively transferred to H10N 60/857> |
D | H01L 39/128 | · · · · · {Multi-layered structures, e.g. super lattices} <administratively transferred to H10N 60/858> |
D | H01L 39/14 | · Permanent superconductor devices <administratively transferred to H10N 60/20> |
D | H01L 39/141 | · · {comprising metal borides, e.g. MgB2} <administratively transferred to H10N 60/202> |
D | H01L 39/143 | · · {comprising high Tc ceramic materials} <administratively transferred to H10N 60/203> |
D | H01L 39/145 | · · {Three or more electrode devices (H01L 39/228 takes precedence)} <administratively transferred to H10N 60/205> |
D | H01L 39/146 | · · · {Field effect devices} <administratively transferred to H10N 60/207> |
D | H01L 39/148 | · · {Abrikosov vortex devices} <administratively transferred to H10N 60/208> |
D | H01L 39/16 | · Devices switchable between superconductive and normal states {, e.g. switches, current limiters (circuits for current limitation using superconductor elements H02H 9/023)} <administratively transferred to H10N 60/30> |
D | H01L 39/18 | · · Cryotrons <administratively transferred to H10N 60/35> |
D | H01L 39/20 | · · · Power cryotrons <administratively transferred to H10N 60/355> |
D | H01L 39/22 | · Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices <administratively transferred to H10N 60/10> |
D | H01L 39/221 | · · {Single electron tunnelling devices} <administratively transferred to H10N 60/11> |
D | H01L 39/223 | · · {Josephson-effect devices} <administratively transferred to H10N 60/12> |
D | H01L 39/225 | · · · {comprising high Tc ceramic materials} <administratively transferred to H10N 60/124> |
D | H01L 39/226 | · · · {comprising metal borides, e.g. MgB2} <administratively transferred to H10N 60/126> |
D | H01L 39/228 | · · {three or more electrode devices, e.g. transistor-like structures} <administratively transferred to H10N 60/128> |
D | H01L 39/24 | · Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L 39/00 or of parts thereof <administratively transferred to H10N 60/01> |
D | H01L 39/2403 | · · {Processes peculiar to the manufacture or treatment of composite superconductor filaments (comprising copper oxide H01L 39/2419)} <administratively transferred to H10N 60/0128> |
D | H01L 39/2406 | · · {of devices comprising Nb or an alloy of Nb with one or more of the elements of group 4, e.g. Ti, Zr, Hf} <administratively transferred to H10N 60/0156> |
D | H01L 39/2409 | · · {of devices comprising an intermetallic compound of type A-15, e.g. Nb3Sn} <administratively transferred to H10N 60/0184> |
D | H01L 39/2412 | · · {of devices comprising molybdenum chalcogenides} <administratively transferred to H10N 60/0212> |
D | H01L 39/2416 | · · {of devices comprising nitrides or carbonitrides} <administratively transferred to H10N 60/0241> |
D | H01L 39/2419 | · · {the superconducting material comprising copper oxide} <administratively transferred to H10N 60/0268> |
D | H01L 39/2422 | · · · {Processes for depositing or forming superconductor layers} <administratively transferred to H10N 60/0296> |
D | H01L 39/2425 | · · · · {from a solution} <administratively transferred to H10N 60/0324> |
D | H01L 39/2429 | · · · · {from a suspension or slurry, e.g. screen printing; doctor blade casting} <administratively transferred to H10N 60/0352> |
D | H01L 39/2432 | · · · · {by evaporation independent of heat source, e.g. MBE} <administratively transferred to H10N 60/0381> |
D | H01L 39/2435 | · · · · {by sputtering} <administratively transferred to H10N 60/0408> |
D | H01L 39/2438 | · · · · {by chemical vapour deposition [CVD]} <administratively transferred to H10N 60/0436> |
D | H01L 39/2441 | · · · · · {by metalloorganic chemical vapour deposition [MOCVD]} <administratively transferred to H10N 60/0464> |
D | H01L 39/2445 | · · · · {by thermal spraying, e.g. plasma deposition} <administratively transferred to H10N 60/0492> |
D | H01L 39/2448 | · · · · {Pulsed laser deposition, e.g. laser sputtering; laser ablation} <administratively transferred to H10N 60/0521> |
D | H01L 39/2451 | · · · · {Precursor deposition followed by after-treatment, e.g. oxidation} <administratively transferred to H10N 60/0548> |
D | H01L 39/2454 | · · · · {characterised by the substrate} <administratively transferred to H10N 60/0576> |
D | H01L 39/2458 | · · · · · {Monocrystalline substrates, e.g. epitaxial growth} <administratively transferred to H10N 60/0604> |
D | H01L 39/2461 | · · · · · {Intermediate layers, e.g. for growth control} <administratively transferred to H10N 60/0632> |
D | H01L 39/2464 | · · · {After-treatment, e.g. patterning} <administratively transferred to H10N 60/0661> |
D | H01L 39/2467 | · · · · {Etching} <administratively transferred to H10N 60/0688> |
D | H01L 39/247 | · · · · {Passivation} <administratively transferred to H10N 60/0716> |
D | H01L 39/2474 | · · · {Manufacture or deposition of contacts or electrodes} <administratively transferred to H10N 60/0744> |
D | H01L 39/2477 | · · · {Processes including the use of precursors} <administratively transferred to H10N 60/0772> |
D | H01L 39/248 | · · · {Processes peculiar to the manufacture or treatment of filaments or composite wires} <administratively transferred to H10N 60/0801> |
D | H01L 39/2483 | · · · {Introducing flux pinning centres} <administratively transferred to H10N 60/0828> |
D | H01L 39/2487 | · · {of devices comprising metal borides, e.g. MgB2} <administratively transferred to H10N 60/0856> |
D | H01L 39/249 | · · {Treatment of superconductive layers by irradiation, e.g. ion-beam, electron-beam, laser beam, X-rays (irradiation devices G21K, H01J)} <administratively transferred to H10N 60/0884> |
D | H01L 39/2493 | · · {for Josephson devices} <administratively transferred to H10N 60/0912> |
D | H01L 39/2496 | · · · {comprising high Tc ceramic materials} <administratively transferred to H10N 60/0941> |
D | H01L 41/00 | Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof (devices consisting of a plurality of solid-state components formed in or on a common substrate H01L 27/00) WARNING Groups H01L 41/23-H01L 41/47 are incomplete pending reclassification of documents from group H01L 41/22. Groups H01L 41/23-H01L 41/47 and H01L 41/22 should be considered in order to perform a complete search. <administratively transferred to H10N 30/00> |
D | H01L 41/02 | · Details <administratively transferred to H10N 30/80> |
D | H01L 41/04 | · · of piezo-electric or electrostrictive devices <administratively transferred to H10N 30/80> |
D | H01L 41/042 | · · · {Drive or control circuitry or methods for piezo-electric or electrostrictive devices not otherwise provided for} <administratively transferred to H10N 30/802> |
D | H01L 41/044 | · · · · {for piezoelectric transformers (conversion of DC or AC power H02M; for operating discharge lamps H05B 41/282)} <administratively transferred to H10N 30/804> |
D | H01L 41/047 | · · · Electrodes {or electrical connection arrangements} <administratively transferred to H10N 30/87> |
D | H01L 41/0471 | · · · · {Individual layer electrodes of multilayer piezo-electric or electrostrictive devices, e.g. internal electrodes} <administratively transferred to H10N 30/871> |
D | H01L 41/0472 | · · · · {Connection electrodes of multilayer piezo-electric or electrostrictive devices, e.g. external electrodes} <administratively transferred to H10N 30/872> |
D | H01L 41/0474 | · · · · · {embedded within piezo-electric or electrostrictive material, e.g. via connections} <administratively transferred to H10N 30/874> |
D | H01L 41/0475 | · · · · {Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins} <administratively transferred to H10N 30/875> |
D | H01L 41/0477 | · · · · {Conductive materials (in general H01B 1/00)} <administratively transferred to H10N 30/877> |
D | H01L 41/0478 | · · · · · {the principal material being non-metallic, e.g. oxide or carbon based} <administratively transferred to H10N 30/878> |
D | H01L 41/053 | · · · Mounts, supports, enclosures or casings <administratively transferred to H10N 30/88> |
D | H01L 41/0533 | · · · · {Further insulation means against electrical, physical or chemical damage, e.g. protective coatings} <administratively transferred to H10N 30/883> |
D | H01L 41/0536 | · · · · {Mechanical prestressing means, e.g. springs (in general F16F 1/00)} <administratively transferred to H10N 30/886> |
D | H01L 41/06 | · · of magnetostrictive devices <administratively transferred to H10N 35/80> |
D | H01L 41/08 | · Piezo-electric or electrostrictive devices <administratively transferred to H10N 30/00> |
D | H01L 41/0805 | · · {based on piezo-electric or electrostrictive films or coatings} <administratively transferred to H10N 30/1051> |
D | H01L 41/081 | · · · {characterised by the underlying base, e.g. substrates} <administratively transferred to H10N 30/10513> |
D | H01L 41/0815 | · · · · {Intermediate layers, e.g. barrier, adhesion or growth control buffer layers} <administratively transferred to H10N 30/10516> |
D | H01L 41/082 | · · {based on piezo-electric or electrostrictive fibres} <administratively transferred to H10N 30/1061> |
D | H01L 41/0825 | · · {with electrical and mechanical input and output, e.g. having combined actuator and sensor parts} <administratively transferred to H10N 30/1071> |
D | H01L 41/083 | · · having a stacked or multilayer structure <administratively transferred to H10N 30/50> |
D | H01L 41/0831 | · · · {with non-rectangular cross-section in stacking direction, e.g. polygonal, trapezoidal} <administratively transferred to H10N 30/501> |
D | H01L 41/0833 | · · · {with non-rectangular cross-section orthogonal to the stacking direction, e.g. polygonal, circular} <administratively transferred to H10N 30/503> |
D | H01L 41/0835 | · · · · {Annular cross-section} <administratively transferred to H10N 30/505> |
D | H01L 41/0836 | · · · {of cylindrical shape with stacking in radial direction, e.g. coaxial or spiral type rolls} <administratively transferred to H10N 30/506> |
D | H01L 41/0838 | · · · {adapted for alleviating internal stress, e.g. cracking control layers ("Sollbruchstellen")} <administratively transferred to H10N 30/508> |
D | H01L 41/087 | · · formed as coaxial cables <administratively transferred to H10N 30/60> |
D | H01L 41/09 | · · with electrical input and mechanical output {, e.g. actuators, vibrators (in frequency selective networks H03H 9/00)} <administratively transferred to H10N 30/20> |
D | H01L 41/0906 | · · · {using longitudinal or thickness displacement combined with bending, shear or torsion displacement} <administratively transferred to H10N 30/202> |
D | H01L 41/0913 | · · · · {with polygonal or rectangular shape} <administratively transferred to H10N 30/2023> |
D | H01L 41/092 | · · · · {with cylindrical or annular shape} <administratively transferred to H10N 30/2027> |
D | H01L 41/0926 | · · · {using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders} <administratively transferred to H10N 30/204> |
D | H01L 41/0933 | · · · · {Beam type} <administratively transferred to H10N 30/2041> |
D | H01L 41/094 | · · · · · {Cantilevers, i.e. having one fixed end} <administratively transferred to H10N 30/2042> |
D | H01L 41/0946 | · · · · · · {connected at their free ends, e.g. parallelogram type} <administratively transferred to H10N 30/2043> |
D | H01L 41/0953 | · · · · · · {with multiple segments mechanically connected in series, e.g. zig-zag type} <administratively transferred to H10N 30/2044> |
D | H01L 41/096 | · · · · · · {adapted for in-plane bending displacement} <administratively transferred to H10N 30/2045> |
D | H01L 41/0966 | · · · · · · {adapted for multi-directional bending displacement} <administratively transferred to H10N 30/2046> |
D | H01L 41/0973 | · · · · {Membrane type} <administratively transferred to H10N 30/2047> |
D | H01L 41/098 | · · · · · {with non-planar shape} <administratively transferred to H10N 30/2048> |
D | H01L 41/0986 | · · · {using longitudinal or thickness displacement only, e.g. d33 or d31 type devices} <administratively transferred to H10N 30/206> |
D | H01L 41/0993 | · · · {using shear or torsion displacement, e.g. d15 type devices} <administratively transferred to H10N 30/208> |
D | H01L 41/107 | · · with electrical input and electrical output {, e.g. transformers} <administratively transferred to H10N 30/40> |
D | H01L 41/113 | · · with mechanical input and electrical output {, e.g. generators, sensors} <administratively transferred to H10N 30/30> |
D | H01L 41/1132 | · · · {Sensors} <administratively transferred to H10N 30/302> |
D | H01L 41/1134 | · · · {Beam type} <administratively transferred to H10N 30/304> |
D | H01L 41/1136 | · · · · {Cantilevers} <administratively transferred to H10N 30/306> |
D | H01L 41/1138 | · · · {Membrane type} <administratively transferred to H10N 30/308> |
D | H01L 41/12 | · Magnetostrictive devices <administratively transferred to H10N 35/00> |
D | H01L 41/125 | · · {with mechanical input and electrical output, e.g. generators, sensors} <administratively transferred to H10N 35/101> |
D | H01L 41/16 | · Selection of materials <administratively transferred to H10N 30/85> |
D | H01L 41/18 | · · for piezo-electric or electrostrictive devices {, e.g. bulk piezo-electric crystals} <administratively transferred to H10N 30/85> |
D | H01L 41/183 | · · · {Composite materials, e.g. having 1-3 or 2-2 type connectivity} <administratively transferred to H10N 30/852> |
D | H01L 41/187 | · · · Ceramic compositions {, i.e. synthetic inorganic polycrystalline compounds incl. epitaxial, quasi-crystalline materials} <administratively transferred to H10N 30/853> |
D | H01L 41/1871 | · · · · {Alkaline earth metal based oxides, e.g. barium titanates} <administratively transferred to H10N 30/8536> |
D | H01L 41/1873 | · · · · {Alkali metal based oxides, e.g. lithium, sodium or potassium niobates} <administratively transferred to H10N 30/8542> |
D | H01L 41/1875 | · · · · {Lead based oxides} <administratively transferred to H10N 30/8548> |
D | H01L 41/1876 | · · · · · {Lead zirconate titanate based} <administratively transferred to H10N 30/8554> |
D | H01L 41/1878 | · · · · {Bismuth based oxides} <administratively transferred to H10N 30/8561> |
D | H01L 41/193 | · · · Macromolecular compositions {, e.g. piezo-electric polymers} <administratively transferred to H10N 30/857> |
D | H01L 41/20 | · · for magnetostrictive devices <administratively transferred to H10N 35/85> |
D | H01L 41/22 | · Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof <administratively transferred to H10N 30/01> |
D | H01L 41/23 | · · Forming enclosures or casings <administratively transferred to H10N 30/02> |
D | H01L 41/25 | · · Assembling devices that include piezo-electric or electrostrictive parts <administratively transferred to H10N 30/03> |
D | H01L 41/253 | · · Treating devices or parts thereof to modify a piezo-electric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning <administratively transferred to H10N 30/04> |
D | H01L 41/257 | · · · by polarising <administratively transferred to H10N 30/045> |
D | H01L 41/27 | · · Manufacturing multilayered piezo-electric or electrostrictive devices or parts thereof, e.g. by stacking piezo-electric bodies and electrodes <administratively transferred to H10N 30/05> |
D | H01L 41/273 | · · · by integrally sintering piezo-electric or electrostrictive bodies and electrodes <administratively transferred to H10N 30/053> |
D | H01L 41/277 | · · · by stacking bulk piezo-electric or electrostrictive bodies and electrodes <administratively transferred to H10N 30/057> |
D | H01L 41/29 | · · Forming electrodes, leads or terminal arrangements <administratively transferred to H10N 30/06> |
D | H01L 41/293 | · · · Connection electrodes of multilayered piezo-electric or electrostrictive parts NOTE Integral individual layer electrode and connection electrode are classified in both H01L 41/293 and H01L 41/297 <administratively transferred to H10N 30/063> |
D | H01L 41/297 | · · · Individual layer electrodes of multilayered piezo-electric or electrostrictive parts NOTE Integral individual layer electrode and connection electrode are classified in both H01L 41/293 and H01L 41/297 <administratively transferred to H10N 30/067> |
D | H01L 41/31 | · · Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base <administratively transferred to H10N 30/07> |
D | H01L 41/311 | · · · Mounting of piezo-electric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate <administratively transferred to H10N 30/071> |
D | H01L 41/312 | · · · by laminating or bonding of piezo-electric or electrostrictive bodies <administratively transferred to H10N 30/072> |
D | H01L 41/313 | · · · · by metal fusing or with adhesives <administratively transferred to H10N 30/073> |
D | H01L 41/314 | · · · by depositing piezo-electric or electrostrictive layers, e.g. aerosol or screen printing <administratively transferred to H10N 30/074> |
D | H01L 41/316 | · · · · by vapour phase deposition <administratively transferred to H10N 30/076> |
D | H01L 41/317 | · · · · by liquid phase deposition <administratively transferred to H10N 30/077> |
D | H01L 41/318 | · · · · · by sol-gel deposition <administratively transferred to H10N 30/078> |
D | H01L 41/319 | · · · · using intermediate layers, e.g. for growth control <administratively transferred to H10N 30/079> |
D | H01L 41/33 | · · Shaping or machining of piezo-electric or electrostrictive bodies <administratively transferred to H10N 30/08> |
D | H01L 41/331 | · · · by coating or depositing using masks, e.g. lift-off <administratively transferred to H10N 30/081> |
D | H01L 41/332 | · · · by etching, e.g. lithography <administratively transferred to H10N 30/082> |
D | H01L 41/333 | · · · by moulding or extrusion <administratively transferred to H10N 30/084> |
D | H01L 41/335 | · · · by machining <administratively transferred to H10N 30/085> |
D | H01L 41/337 | · · · · by polishing or grinding <administratively transferred to H10N 30/086> |
D | H01L 41/338 | · · · · by cutting or dicing <administratively transferred to H10N 30/088> |
D | H01L 41/339 | · · · · by punching <administratively transferred to H10N 30/089> |
D | H01L 41/35 | · · Forming piezo-electric or electrostrictive materials <administratively transferred to H10N 30/09> |
D | H01L 41/37 | · · · Composite materials <administratively transferred to H10N 30/092> |
D | H01L 41/39 | · · · Inorganic materials <administratively transferred to H10N 30/093> |
D | H01L 41/41 | · · · · by melting <administratively transferred to H10N 30/095> |
D | H01L 41/43 | · · · · by sintering <administratively transferred to H10N 30/097> |
D | H01L 41/45 | · · · Organic materials <administratively transferred to H10N 30/098> |
D | H01L 41/47 | · Processes or apparatus specially adapted for the assembly, manufacture or treatment of magnetostrictive devices or of parts thereof <administratively transferred to H10N 35/01> |
D | H01L 43/00 | Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) <administratively transferred to H10N 50/00> |
D | H01L 43/02 | · Details <administratively transferred to H10N 50/80> |
D | H01L 43/04 | · · of Hall-effect devices <administratively transferred to H10N 52/80> |
D | H01L 43/06 | · Hall-effect devices <administratively transferred to H10N 52/00> |
D | H01L 43/065 | · · {Semiconductor Hall-effect devices} <administratively transferred to H10N 52/101> |
D | H01L 43/08 | · Magnetic-field-controlled resistors <administratively transferred to H10N 50/10> |
D | H01L 43/10 | · Selection of materials <administratively transferred to H10N 50/85> |
D | H01L 43/12 | · Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof <administratively transferred to H10N 50/01> |
D | H01L 43/14 | · · for Hall-effect devices <administratively transferred to H10N 52/01> |
D | H01L 45/00 | Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00; devices using superconductivity H01L 39/00; piezo-electric devices H01L 41/00; bulk negative resistance effect devices H01L 47/00; {memories G11C 11/34; G11C 13/0002; amplifying circuits H03F 11/00; pulse generation H03K 3/02; electronic switching circuits H03K 17/00; logic circuits H03K 19/00}) <administratively transferred to H10N 70/00> |
D | H01L 45/005 | · {Charge density wave transport devices} <administratively transferred to H10N 70/151> |
D | H01L 45/02 | · Solid state travelling-wave devices <administratively transferred to H10N 70/10> |
D | H01L 45/04 | · {Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory} <administratively transferred to H10N 70/20> |
D | H01L 45/06 | · · {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect} <administratively transferred to H10N 70/231> |
D | H01L 45/065 | · · · {between different crystalline phases, e.g. cubic and hexagonal} <administratively transferred to H10N 70/235> |
D | H01L 45/08 | · · {based on migration or redistribution of ionic species, e.g. anions, vacancies} <administratively transferred to H10N 70/24> |
D | H01L 45/085 | · · · {the species being metal cations, e.g. programmable metallization cells} <administratively transferred to H10N 70/245> |
D | H01L 45/10 | · · {based on bulk electronic defects, e.g. trapping of electrons} <administratively transferred to H10N 70/25> |
D | H01L 45/12 | · · {Details} <administratively transferred to H10N 70/801> |
D | H01L 45/1206 | · · · {Three or more terminal devices, e.g. transistor like devices} <administratively transferred to H10N 70/253> |
D | H01L 45/1213 | · · · {Radiation or particle beam assisted switching devices, e.g. optically controlled devices} <administratively transferred to H10N 70/257> |
D | H01L 45/122 | · · · {Device geometry} <administratively transferred to H10N 70/821> |
D | H01L 45/1226 | · · · · {adapted for essentially horizontal current flow, e.g. bridge type devices} <administratively transferred to H10N 70/823> |
D | H01L 45/1233 | · · · · {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices} <administratively transferred to H10N 70/826> |
D | H01L 45/124 | · · · · · {on sidewalls of dielectric structures, e.g. mesa or cup type devices} <administratively transferred to H10N 70/8265> |
D | H01L 45/1246 | · · · · {Further means within the switching material region to limit current flow, e.g. constrictions} <administratively transferred to H10N 70/828> |
D | H01L 45/1253 | · · · {Electrodes} <administratively transferred to H10N 70/841> |
D | H01L 45/126 | · · · · {adapted for resistive heating} <administratively transferred to H10N 70/8413> |
D | H01L 45/1266 | · · · · {adapted for supplying ionic species} <administratively transferred to H10N 70/8416> |
D | H01L 45/1273 | · · · · {adapted for electric field or current focusing, e.g. tip shaped} <administratively transferred to H10N 70/8418> |
D | H01L 45/128 | · · · {Thermal details} <administratively transferred to H10N 70/861> |
D | H01L 45/1286 | · · · · {Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel} <administratively transferred to H10N 70/8613> |
D | H01L 45/1293 | · · · · {Thermal insulation means} <administratively transferred to H10N 70/8616> |
D | H01L 45/14 | · · {Selection of switching materials} <administratively transferred to H10N 70/881> |
D | H01L 45/141 | · · · {Compounds of sulfur, selenium or tellurium, e.g. chalcogenides} <administratively transferred to H10N 70/882> |
D | H01L 45/142 | · · · · {Sulfides, e.g. CuS} <administratively transferred to H10N 70/8822> |
D | H01L 45/143 | · · · · {Selenides, e.g. GeSe} <administratively transferred to H10N 70/8825> |
D | H01L 45/144 | · · · · {Tellurides, e.g. GeSbTe} <administratively transferred to H10N 70/8828> |
D | H01L 45/145 | · · · {Oxides or nitrides} <administratively transferred to H10N 70/883> |
D | H01L 45/146 | · · · · {Binary metal oxides, e.g. TaOx} <administratively transferred to H10N 70/8833> |
D | H01L 45/147 | · · · · {Complex metal oxides, e.g. perovskites, spinels} <administratively transferred to H10N 70/8836> |
D | H01L 45/148 | · · · {Other compounds of groups 13-15, e.g. elemental or compound semiconductors} <administratively transferred to H10N 70/884> |
D | H01L 45/149 | · · · · {Carbon or carbides} <administratively transferred to H10N 70/8845> |
D | H01L 45/16 | · · {Manufacturing} <administratively transferred to H10N 70/011> |
D | H01L 45/1608 | · · · {Formation of the switching material, e.g. layer deposition} <administratively transferred to H10N 70/021> |
D | H01L 45/1616 | · · · · {by chemical vapor deposition, e.g. MOCVD, ALD} <administratively transferred to H10N 70/023> |
D | H01L 45/1625 | · · · · {by physical vapor deposition, e.g. sputtering} <administratively transferred to H10N 70/026> |
D | H01L 45/1633 | · · · · {by conversion of electrode material, e.g. oxidation} <administratively transferred to H10N 70/028> |
D | H01L 45/1641 | · · · {Modification of the switching material, e.g. post-treatment, doping} <administratively transferred to H10N 70/041> |
D | H01L 45/165 | · · · · {by implantation} <administratively transferred to H10N 70/043> |
D | H01L 45/1658 | · · · · {by diffusion, e.g. photo-dissolution} <administratively transferred to H10N 70/046> |
D | H01L 45/1666 | · · · {Patterning of the switching material} <administratively transferred to H10N 70/061> |
D | H01L 45/1675 | · · · · {by etching of pre-deposited switching material layers, e.g. lithography} <administratively transferred to H10N 70/063> |
D | H01L 45/1683 | · · · · {by filling of openings, e.g. damascene method} <administratively transferred to H10N 70/066> |
D | H01L 45/1691 | · · · · {Patterning process specially adapted for achieving sub-lithographic dimensions, e.g. using spacers} <administratively transferred to H10N 70/068> |
D | H01L 47/00 | Bulk negative resistance effect devices, e.g. Gunn-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof (devices consisting of a plurality of solid state components formed in or on a common substrate H01L 27/00) <administratively transferred to H10N 80/00> |
D | H01L 47/005 | · {Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof (not peculiar thereto H01L 21/00)} <administratively transferred to H10N 80/01> |
D | H01L 47/02 | · Gunn-effect devices {or transferred electron devices} <administratively transferred to H10N 80/10> |
D | H01L 47/023 | · · {controlled by electromagnetic radiation} <administratively transferred to H10N 80/103> |
D | H01L 47/026 | · · {Gunn diodes (H01L 47/02 takes precedence)} <administratively transferred to H10N 80/107> |
D | H01L 49/00 | Solid state devices not provided for in groups H01L 27/00 - H01L 47/00 and H01L 51/00 and not provided for in any other subclass; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof <administratively transferred to H10N 99/00> |
D | H01L 49/003 | · {Devices using Mott metal-insulator transition, e.g. field effect transistors} <administratively transferred to H10N 99/03> |
D | H01L 49/006 | · {Quantum devices, e.g. Quantum Interference Devices, Metal Single Electron Transistor (using semiconductors in the active part H01L 29/00)} <administratively transferred to H10N 99/05> |
D | H01L 49/02 | · Thin-film or thick-film devices <administratively transferred to H10N 97/00> |
Project: RP11801 (H01L)
D | H01L 51/00 | Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof (devices consisting of a plurality of components formed in or on a common substrate H01L 27/28; thermoelectric devices using organic material H01L 35/00, H01L 37/00; piezoelectric, electrostrictive or magnetostrictive elements using organic material H01L 41/00) <administratively transferred to H10K 99/00> |
D | H01L 51/0001 | · {Processes specially adapted for the manufacture or treatment of devices or of parts thereof (multistep processes H01L 51/0098, H01L 51/05, H01L 51/42, H01L 51/50)} <administratively transferred to H10K 71/00> |
D | H01L 51/0002 | · · {Deposition of organic semiconductor materials on a substrate} <administratively transferred to H10K 71/10> |
D | H01L 51/0003 | · · · {using liquid deposition, e.g. spin coating} <administratively transferred to H10K 71/12> |
D | H01L 51/0004 | · · · · {using printing techniques, e.g. ink-jet printing, screen printing} <administratively transferred to H10K 71/13> |
D | H01L 51/0005 | · · · · · {ink-jet printing} <administratively transferred to H10K 71/135> |
D | H01L 51/0006 | · · · · {Electrolytic deposition using an external electrical current, e.g. in-situ electropolymerisation} <administratively transferred to H10K 71/125> |
D | H01L 51/0007 | · · · · {characterised by the solvent} <administratively transferred to H10K 71/15> |
D | H01L 51/0008 | · · · {using physical deposition, e.g. sublimation, sputtering} <administratively transferred to H10K 71/16> |
D | H01L 51/0009 | · · · · {using laser ablation} <administratively transferred to H10K 71/162> |
D | H01L 51/001 | · · · · {Vacuum deposition} <administratively transferred to H10K 71/164> |
D | H01L 51/0011 | · · · · {selective deposition, e.g. using a mask} <administratively transferred to H10K 71/166> |
D | H01L 51/0012 | · · · {special provisions for the orientation or alignment of the layer to be deposited} <administratively transferred to H10K 71/191> |
D | H01L 51/0013 | · · · {using non liquid printing techniques, e.g. thermal transfer printing from a donor sheet} <administratively transferred to H10K 71/18> |
D | H01L 51/0014 | · · {for changing the shape of the device layer, e.g. patterning} <administratively transferred to H10K 71/20> |
D | H01L 51/0015 | · · · {by selective transformation of an existing layer} <administratively transferred to H10K 71/211> |
D | H01L 51/0016 | · · · {lift off techniques} <administratively transferred to H10K 71/221> |
D | H01L 51/0017 | · · · {etching of an existing layer} <administratively transferred to H10K 71/231> |
D | H01L 51/0018 | · · · · {using photolithographic techniques} <administratively transferred to H10K 71/233> |
D | H01L 51/0019 | · · · · {using printing techniques, e.g. applying the etch liquid using an ink jet printer} <administratively transferred to H10K 71/236> |
D | H01L 51/002 | · · {Making n- or p-doped regions} <administratively transferred to H10K 71/30> |
D | H01L 51/0021 | · · {Formation of conductors} <administratively transferred to H10K 71/60> |
D | H01L 51/0022 | · · · {using printing techniques, e.g. ink jet printing} <administratively transferred to H10K 71/611> |
D | H01L 51/0023 | · · · {Patterning of conductive layers} <administratively transferred to H10K 71/621> |
D | H01L 51/0024 | · · {for forming devices by joining two substrates together, e.g. lamination technique} <administratively transferred to H10K 71/50> |
D | H01L 51/0025 | · · {Purification process of the organic semiconductor material} <administratively transferred to H10K 71/311> |
D | H01L 51/0026 | · · {Thermal treatment of the active layer, e.g. annealing} <administratively transferred to H10K 71/40> |
D | H01L 51/0027 | · · · {using coherent electromagnetic radiation, e.g. laser annealing} <administratively transferred to H10K 71/421> |
D | H01L 51/0028 | · · · {Thermal treatment in the presence of solvent vapors, e.g. solvent annealing} <administratively transferred to H10K 71/441> |
D | H01L 51/0029 | · · {Special provisions for controlling the atmosphere during processing (H01L 51/0026 takes precedence)} <administratively transferred to H10K 71/811> |
D | H01L 51/003 | · · {using a temporary substrate} <administratively transferred to H10K 71/80> |
D | H01L 51/0031 | · · {Testing, e.g. accelerated lifetime tests of photoelectric devices} <administratively transferred to H10K 71/70> |
D | H01L 51/0032 | · {Selection of organic semiconducting materials, e.g. organic light sensitive or organic light emitting materials} NOTE This group only covers the selection of organic materials for their electrical or other properties insofar as they are specific for their use in devices covered by the group H01L 51/00. For the materials per se, see the relevant subclasses. Attention is drawn to the following places:
<administratively transferred to H10K 85/00> |
D | H01L 51/0034 | · · {Organic polymers or oligomers (organic macromolecular compounds or compositions per se C08)} <administratively transferred to H10K 85/10> |
D | H01L 51/0035 | · · · {comprising aromatic, heteroaromatic, or arrylic chains, e.g. polyaniline (per se C08G 73/026), polyphenylene (per se C08G 61/10), polyphenylene vinylene (per se C08G 61/02)} <administratively transferred to H10K 85/111> |
D | H01L 51/0036 | · · · · {Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene (per se C08G 61/126)} <administratively transferred to H10K 85/113> |
D | H01L 51/0037 | · · · · · {Polyethylene dioxythiophene [PEDOT] and derivatives} <administratively transferred to H10K 85/1135> |
D | H01L 51/0038 | · · · · {Poly-phenylenevinylene and derivatives (per se C08G 61/10)} <administratively transferred to H10K 85/114> |
D | H01L 51/0039 | · · · · {Polyeflurorene and derivatives} <administratively transferred to H10K 85/115> |
D | H01L 51/004 | · · · {comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC, PTFE} <administratively transferred to H10K 85/141> |
D | H01L 51/0041 | · · · · {Poly acetylene (per se C08G 61/04, C08F 38/02, C08F 138/02, C08F 238/02)or derivatives} <administratively transferred to H10K 85/143> |
D | H01L 51/0042 | · · · · {poly N-vinylcarbazol and derivatives} <administratively transferred to H10K 85/146> |
D | H01L 51/0043 | · · · {Copolymers} <administratively transferred to H10K 85/151> |
D | H01L 51/0044 | · · · {Ladder-type polymers} <administratively transferred to H10K 85/154> |
D | H01L 51/0045 | · · {Carbon containing materials, e.g. carbon nanotubes, fullerenes (per se C01B 32/15)} <administratively transferred to H10K 85/20> |
D | H01L 51/0046 | · · · {Fullerenes, e.g. C60, C70} <administratively transferred to H10K 85/211> |
D | H01L 51/0047 | · · · · {comprising substituents, e.g. PCBM} <administratively transferred to H10K 85/215> |
D | H01L 51/0048 | · · · {Carbon nanotubes} <administratively transferred to H10K 85/221> |
D | H01L 51/0049 | · · · · {comprising substituents} <administratively transferred to H10K 85/225> |
D | H01L 51/005 | · · {Macromolecular systems with low molecular weight, e.g. cyanine dyes, coumarine dyes, tetrathiafulvalene (H01L 51/0045, H01L 51/0077, H01L 51/0093, H01L 51/0094 take precedence)} <administratively transferred to H10K 85/60> |
D | H01L 51/0051 | · · · {Charge transfer complexes} <administratively transferred to H10K 85/611> |
D | H01L 51/0052 | · · · {Polycyclic condensed aromatic hydrocarbons, e.g. anthracene} <administratively transferred to H10K 85/615> |
D | H01L 51/0053 | · · · · {Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride, perylene tetracarboxylic diimide} <administratively transferred to H10K 85/621> |
D | H01L 51/0054 | · · · · {containing four rings, e.g. pyrene} <administratively transferred to H10K 85/622> |
D | H01L 51/0055 | · · · · {containing five rings, e.g. pentacene} <administratively transferred to H10K 85/623> |
D | H01L 51/0056 | · · · · {containing six or more rings} <administratively transferred to H10K 85/624> |
D | H01L 51/0057 | · · · · {containing at least one aromatic ring having 7 or more carbon atoms, e.g. azulene} <administratively transferred to H10K 85/625> |
D | H01L 51/0058 | · · · · {containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene} <administratively transferred to H10K 85/626> |
D | H01L 51/0059 | · · · {Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine (per se C07C 211/00)} <administratively transferred to H10K 85/631> |
D | H01L 51/006 | · · · · {comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom} <administratively transferred to H10K 85/633> |
D | H01L 51/0061 | · · · · {comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom} <administratively transferred to H10K 85/636> |
D | H01L 51/0062 | · · · {aromatic compounds comprising a hetero atom, e.g.: N,P,S} <administratively transferred to H10K 85/649> |
D | H01L 51/0064 | · · · · {Cyanine Dyes} <administratively transferred to H10K 85/652> |
D | H01L 51/0065 | · · · · {comprising only oxygen as heteroatom} <administratively transferred to H10K 85/653> |
D | H01L 51/0067 | · · · · {comprising only nitrogen as heteroatom (H01L 51/0064 takes precedence)} <administratively transferred to H10K 85/654> |
D | H01L 51/0068 | · · · · {comprising only sulfur as heteroatom} <administratively transferred to H10K 85/655> |
D | H01L 51/0069 | · · · · {comprising two or more different heteroatoms per ring, e.g. S and N (H01L 51/0064 takes precedence)} <administratively transferred to H10K 85/656> |
D | H01L 51/007 | · · · · · {Oxadiazole compounds} <administratively transferred to H10K 85/6565> |
D | H01L 51/0071 | · · · · {Polycyclic condensed heteroaromatic hydrocarbons} <administratively transferred to H10K 85/657> |
D | H01L 51/0072 | · · · · · {comprising only nitrogen in the heteroaromatic polycondensed ringsystem, e.g. phenanthroline, carbazole} <administratively transferred to H10K 85/6572> |
D | H01L 51/0073 | · · · · · {comprising only oxygen in the heteroaromatic polycondensed ringsystem, e.g. cumarine dyes} <administratively transferred to H10K 85/6574> |
D | H01L 51/0074 | · · · · · {comprising only sulfur in the heteroaromatic polycondensed ringsystem, e.g. benzothiophene} <administratively transferred to H10K 85/6576> |
D | H01L 51/0075 | · · {Langmuir Blodgett films (per se B05D 1/202)} <administratively transferred to H10K 85/701> |
D | H01L 51/0076 | · · {Liquid crystalline materials (per se C09K 19/00)} <administratively transferred to H10K 85/731> |
D | H01L 51/0077 | · · {Coordination compounds, e.g. porphyrin} <administratively transferred to H10K 85/30> |
D | H01L 51/0078 | · · · {Phthalocyanine (per se C09B 47/04)} <administratively transferred to H10K 85/311> |
D | H01L 51/0079 | · · · {Metal complexes comprising a IIIB-metal (B, Al, Ga, In or TI), e.g. Tris (8-hydroxyquinoline) gallium (Gaq3)} <administratively transferred to H10K 85/321> |
D | H01L 51/008 | · · · · {comprising boron} <administratively transferred to H10K 85/322> |
D | H01L 51/0081 | · · · · {comprising aluminium, e.g. Alq3} <administratively transferred to H10K 85/324> |
D | H01L 51/0082 | · · · · {comprising gallium} <administratively transferred to H10K 85/326> |
D | H01L 51/0083 | · · · {Metal complexes comprising an iron-series metal, e.g. Fe, Co, Ni} <administratively transferred to H10K 85/331> |
D | H01L 51/0084 | · · · {Transition metal complexes, e.g. Ru(II)polypyridine complexes} <administratively transferred to H10K 85/341> |
D | H01L 51/0085 | · · · · {comprising Iridium} <administratively transferred to H10K 85/342> |
D | H01L 51/0086 | · · · · {comprising Ruthenium} <administratively transferred to H10K 85/344> |
D | H01L 51/0087 | · · · · {comprising platinum} <administratively transferred to H10K 85/346> |
D | H01L 51/0088 | · · · · {comprising osmium} <administratively transferred to H10K 85/348> |
D | H01L 51/0089 | · · · {Metal complexes comprising Lanthanides or Actinides, e.g. Eu} <administratively transferred to H10K 85/351> |
D | H01L 51/009 | · · · {Polynuclear complexes, i.e. complexes having two or more metal centers} <administratively transferred to H10K 85/361> |
D | H01L 51/0091 | · · · {Metal complexes comprising a IB-metal (Cu, Ag, Au)} <administratively transferred to H10K 85/371> |
D | H01L 51/0092 | · · · {Metal complexes comprising a IIB-metal (Zn, Cd, Hg)} <administratively transferred to H10K 85/381> |
D | H01L 51/0093 | · · {Biomolecules or bio-macromolecules, e.g. proteines, ATP, chlorophyl, beta-carotene, lipids, enzymes} <administratively transferred to H10K 85/761> |
D | H01L 51/0094 | · · {Silicon-containing organic semiconductors} <administratively transferred to H10K 85/40> |
D | H01L 51/0095 | · · {Starburst compounds} <administratively transferred to H10K 85/791> |
D | H01L 51/0096 | · {Substrates} <administratively transferred to H10K 77/10> |
D | H01L 51/0097 | · · {flexible substrates} <administratively transferred to H10K 77/111> |
D | H01L 51/0098 | · {Molecular electronic devices (molecular computers G06F 15/80; molecular memories G11C 11/00, G11C 13/02)} <administratively transferred to H10K 30/671> |
D | H01L 51/05 | · specially adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential- jump barrier or surface barrier {multistep processes for their manufacture} <administratively transferred to H10K 10/00> |
D | H01L 51/0504 | · · {the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or swiched, e.g. three-terminal devices} <administratively transferred to H10K 10/00> |
D | H01L 51/0508 | · · · {Field-effect devices, e.g. TFTs} <administratively transferred to H10K 10/46> |
D | H01L 51/0512 | · · · · {insulated gate field effect transistors} <administratively transferred to H10K 10/462> |
D | H01L 51/0516 | · · · · · {characterised by the gate dielectric} <administratively transferred to H10K 10/468> |
D | H01L 51/052 | · · · · · · {the gate dielectric comprising only organic materials} <administratively transferred to H10K 10/471> |
D | H01L 51/0525 | · · · · · · {the gate dielectric comprising only inorganic materials} <administratively transferred to H10K 10/472> |
D | H01L 51/0529 | · · · · · · {the gate dielectric having a multilayered structure} <administratively transferred to H10K 10/474> |
D | H01L 51/0533 | · · · · · · · {Combinations of organic and inorganic layers} <administratively transferred to H10K 10/476> |
D | H01L 51/0537 | · · · · · · {the gate dielectric comprising composite materials, e.g. TiO2 particles in a polymer matrix} <administratively transferred to H10K 10/478> |
D | H01L 51/0541 | · · · · · {Lateral single gate single channel transistors with non inverted structure, i.e. the organic semiconductor layer is formed before the gate electode} <administratively transferred to H10K 10/464> |
D | H01L 51/0545 | · · · · · {Lateral single gate single channel transistors with inverted structure, i.e. the organic semiconductor layer is formed after the gate electrode} <administratively transferred to H10K 10/466> |
D | H01L 51/055 | · · · · · {characterised by the gate conductor} <administratively transferred to H10K 10/481> |
D | H01L 51/0554 | · · · · · · {the transistor having two or more gate electrodes} <administratively transferred to H10K 10/482> |
D | H01L 51/0558 | · · · · · {characterised by the channel of the transistor} <administratively transferred to H10K 10/484> |
D | H01L 51/0562 | · · · · · · {the channel comprising two or more active layers, e.g. forming pn - hetero junction} <administratively transferred to H10K 10/486> |
D | H01L 51/0566 | · · · · · · {the channel comprising a composite layer, e.g. a mixture of donor and acceptor moieties, forming pn - bulk hetero junction} <administratively transferred to H10K 10/488> |
D | H01L 51/057 | · · · · · {having a vertical structure, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]} <administratively transferred to H10K 10/491> |
D | H01L 51/0575 | · · {the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices} <administratively transferred to H10K 10/20> |
D | H01L 51/0579 | · · · {Schottky diodes} <administratively transferred to H10K 10/23> |
D | H01L 51/0583 | · · · {comprising an organic/organic junction, e.g. hetero-junction} <administratively transferred to H10K 10/26> |
D | H01L 51/0587 | · · · {comprising an organic/inorganic hetero-junction, e.g. hetero-junction} <administratively transferred to H10K 10/29> |
D | H01L 51/0591 | · · · {Bi-stable switching devices} <administratively transferred to H10K 10/50> |
D | H01L 51/0595 | · · · {molecular electronic devices (molecular computers G06F 15/80; molecular memories G11C 11/00, G11C 13/02)} <administratively transferred to H10K 10/701> |
D | H01L 51/10 | · · Details of devices <administratively transferred to H10K 10/80> |
D | H01L 51/102 | · · · {Electrodes} <administratively transferred to H10K 10/82> |
D | H01L 51/105 | · · · · {Ohmic contacts, e.g. source and drain electrodes} <administratively transferred to H10K 10/84> |
D | H01L 51/107 | · · · {Passivation, containers, encapsulations} <administratively transferred to H10K 10/88> |
D | H01L 51/42 | · specially adapted for sensing infra-red radiation, light, electro-magnetic radiation of shorter wavelength or corpuscular radiation and adapted for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation {using organic materials as the active part, or using a combination of organic materials with other material as the active part; Multistep processes for their manufacture} <administratively transferred to H10K 30/00> |
D | H01L 51/4206 | · · {Metal-organic semiconductor-metal devices} <administratively transferred to H10K 30/451> |
D | H01L 51/4213 | · · {Comprising organic semiconductor-inorganic semiconductor hetero-junctions (H01L 51/4253 takes precedence)} <administratively transferred to H10K 30/10> |
D | H01L 51/422 | · · · {Majority carrier devices using sensitisation of widebandgap semiconductors, e.g. TiO2 (photoelectrochemical devices with a liquid or solid electrolyte H01G 9/20)} <administratively transferred to H10K 30/15> |
D | H01L 51/4226 | · · · · {the wideband gap semiconductor comprising titanium oxide, e.g. TiO2} <administratively transferred to H10K 30/151> |
D | H01L 51/4233 | · · · · {the wideband gap semiconductor comprising zinc oxide, e.g. ZnO} <administratively transferred to H10K 30/152> |
D | H01L 51/424 | · · {comprising organic semiconductor-organic semiconductor hetero-junctions (H01L 51/4253 takes precedence)} <administratively transferred to H10K 30/20> |
D | H01L 51/4246 | · · · {comprising multi-junctions, e.g. double hetero-junctions} <administratively transferred to H10K 30/211> |
D | H01L 51/4253 | · · {comprising bulk hetero-junctions, e.g. interpenetrating networks} <administratively transferred to H10K 30/30> |
D | H01L 51/426 | · · · {comprising inorganic nanostructures, e.g. CdSe nanoparticles} <administratively transferred to H10K 30/35> |
D | H01L 51/4266 | · · · · {the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT} <administratively transferred to H10K 30/352> |
D | H01L 51/4273 | · · · {comprising blocking layers, e.g. exciton blocking layers} <administratively transferred to H10K 30/353> |
D | H01L 51/428 | · · {light sensitive field effect devices} <administratively transferred to H10K 30/65> |
D | H01L 51/4286 | · · {Devices having a m-i-s structure} <administratively transferred to H10K 30/354> |
D | H01L 51/4293 | · · {Devices having a p-i-n structure} <administratively transferred to H10K 30/40> |
D | H01L 51/44 | · · Details of devices <administratively transferred to H10K 30/80> |
D | H01L 51/441 | · · · {Electrodes} <administratively transferred to H10K 30/81> |
D | H01L 51/442 | · · · · {transparent electrodes, e.g. ITO, TCO} <administratively transferred to H10K 30/82> |
D | H01L 51/444 | · · · · · {comprising carbon nanotubes} <administratively transferred to H10K 30/821> |
D | H01L 51/445 | · · · · · {comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes} <administratively transferred to H10K 30/83> |
D | H01L 51/447 | · · · {Light trapping means} <administratively transferred to H10K 30/87> |
D | H01L 51/448 | · · · {Passivation, containers, encapsulations} <administratively transferred to H10K 30/88> |
D | H01L 51/50 | · specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED] (organic semiconductor lasers H01S 5/36 {; circuit arrangements for OLED or PLED H05B 45/60; control arrangements for organic electroluminescent displays G09G 3/3208}) <administratively transferred to H10K 50/00> |
D | H01L 51/5004 | · · {characterised by the interrelation between parameters of constituting active layers, e.g. HOMO-LUMO relation} <administratively transferred to H10K 50/11 and H10K 2101/40 ADD simultaneously> |
D | H01L 51/5008 | · · {Intermediate layers comprising a mixture of materials of the adjoining active layers} <administratively transferred to H10K 30/865> |
D | H01L 51/5012 | · · {Electroluminescent [EL] layer} <administratively transferred to H10K 50/11> |
D | H01L 51/5016 | · · · {Triplet emission} <administratively transferred to H10K 50/11 and H10K 2101/10 ADD simultaneously> |
D | H01L 51/502 | · · · {comprising active inorganic nanostructures, e.g. luminescent quantum dots} <administratively transferred to H10K 50/115> |
D | H01L 51/5024 | · · · {having a host comprising an emissive dopant and further additive materials, e.g. for improving the dispersability, for improving the stabilisation, for assisting energy transfer} <administratively transferred to H10K 50/12> |
D | H01L 51/5028 | · · · · {for assisting energy transfer, e.g. sensitization} <administratively transferred to H10K 50/121> |
D | H01L 51/5032 | · · · {Light emitting electrochemical cells [LEC], i.e. with mobile ions in the active layer} <administratively transferred to H10K 50/135> |
D | H01L 51/5036 | · · · {Multi-colour light emission, e.g. colour tuning, polymer blend, stack of electroluminescent layers} <administratively transferred to H10K 50/125> |
D | H01L 51/504 | · · · · {Stack of electroluminescent layers} <administratively transferred to H10K 50/13> |
D | H01L 51/5044 | · · · · · {with spacer layers between the emissive layers} <administratively transferred to H10K 50/131> |
D | H01L 51/5048 | · · {Carrier transporting layer} <administratively transferred to H10K 50/14> |
D | H01L 51/5056 | · · · {Hole transporting layer} <administratively transferred to H10K 50/15> |
D | H01L 51/506 | · · · · {comprising a dopant} <administratively transferred to H10K 50/155> |
D | H01L 51/5064 | · · · · {having a multilayered structure} <administratively transferred to H10K 50/156> |
D | H01L 51/5068 | · · · · {arranged between the light emitting layer and the cathode} <administratively transferred to H10K 50/157> |
D | H01L 51/5072 | · · · {Electron transporting layer} <administratively transferred to H10K 50/16> |
D | H01L 51/5076 | · · · · {comprising a dopant} <administratively transferred to H10K 50/165> |
D | H01L 51/508 | · · · · {having a multilayered structure} <administratively transferred to H10K 50/166> |
D | H01L 51/5084 | · · · · {arranged between the light emitting layer and the anode} <administratively transferred to H10K 50/167> |
D | H01L 51/5088 | · · {Carrier injection layer} <administratively transferred to H10K 50/17> |
D | H01L 51/5092 | · · · {Electron injection layer} <administratively transferred to H10K 50/171> |
D | H01L 51/5096 | · · {Carrier blocking layer} <administratively transferred to H10K 50/18> |
D | H01L 51/52 | · · Details of devices <administratively transferred to H10K 50/80> |
D | H01L 51/5203 | · · · {Electrodes} <administratively transferred to H10K 50/805> |
D | H01L 51/5206 | · · · · {Anodes, i.e. with high work-function material} <administratively transferred to H10K 50/81> |
D | H01L 51/5209 | · · · · · {characterised by the shape} <administratively transferred to H10K 50/813> |
D | H01L 51/5212 | · · · · · {combined with auxiliary electrode, e.g. ITO layer combined with metal lines} <administratively transferred to H10K 50/814> |
D | H01L 51/5215 | · · · · · {composed of transparent multilayers} <administratively transferred to H10K 50/816> |
D | H01L 51/5218 | · · · · · {Reflective anodes, e.g. ITO combined with thick metallic layer} <administratively transferred to H10K 50/818> |
D | H01L 51/5221 | · · · · {Cathodes, i.e. with low work-function material} <administratively transferred to H10K 50/82> |
D | H01L 51/5225 | · · · · · {characterised by the shape} <administratively transferred to H10K 50/822> |
D | H01L 51/5228 | · · · · · {combined with auxiliary electrodes} <administratively transferred to H10K 50/824> |
D | H01L 51/5231 | · · · · · {composed of opaque multilayers} <administratively transferred to H10K 50/826> |
D | H01L 51/5234 | · · · · · {Transparent, e.g. including thin metal film} <administratively transferred to H10K 50/828> |
D | H01L 51/5237 | · · · {Passivation; Containers; Encapsulation, e.g. against humidity} <administratively transferred to H10K 50/84> |
D | H01L 51/524 | · · · · {Sealing arrangements having a self-supporting structure, e.g. containers} <administratively transferred to H10K 50/841> |
D | H01L 51/5243 | · · · · · {the sealing arrangements being made of metallic material} <administratively transferred to H10K 50/8423> |
D | H01L 51/5246 | · · · · · {characterised by the peripheral sealing arrangements, e.g. adhesives, sealants} <administratively transferred to H10K 50/8426> |
D | H01L 51/525 | · · · · · {Vertical spacers, e.g. arranged between the sealing arrangement and the OLED} <administratively transferred to H10K 50/8428> |
D | H01L 51/5253 | · · · · {Protective coatings} <administratively transferred to H10K 50/844> |
D | H01L 51/5256 | · · · · · {having repetitive multilayer structures} <administratively transferred to H10K 50/8445> |
D | H01L 51/5259 | · · · · {including getter material or desiccant} <administratively transferred to H10K 50/846> |
D | H01L 51/5262 | · · · {Arrangements for extracting light from the device} <administratively transferred to H10K 50/85> |
D | H01L 51/5265 | · · · · {comprising a resonant cavity structure, e.g. Bragg reflector pair} <administratively transferred to H10K 50/852> |
D | H01L 51/5268 | · · · · {Scattering means} <administratively transferred to H10K 50/854> |
D | H01L 51/5271 | · · · · {Reflective means} <administratively transferred to H10K 50/856> |
D | H01L 51/5275 | · · · · {Refractive means, e.g. lens} <administratively transferred to H10K 50/858> |
D | H01L 51/5278 | · · · · {comprising a repetitive electroluminescent unit between one set of electrodes} <administratively transferred to H10K 50/19> |
D | H01L 51/5281 | · · · {Arrangements for contrast improvement, e.g. preventing reflection of ambient light} <administratively transferred to H10K 50/86> |
D | H01L 51/5284 | · · · · {comprising a light absorbing layer, e.g. black layer} <administratively transferred to H10K 50/865> |
D | H01L 51/5287 | · · · {OLED having a fiber structure} <administratively transferred to H10K 50/182> |
D | H01L 51/529 | · · · {Arrangements for heating or cooling} <administratively transferred to H10K 50/87> |
D | H01L 51/5293 | · · · {Arrangements for polarized light emission (H01L 51/5281 takes precedence)} <administratively transferred to H10K 50/868> |
D | H01L 51/5296 | · · · {Light emitting organic transistors} <administratively transferred to H10K 50/30> |
D | H01L 51/56 | · · Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof <administratively transferred to H10K 71/00> |
U | Details relating to assemblies covered by the group H01L 25/00 but not provided for in its subgroups | |
· All the devices being of a type provided for in the same subgroup of groups H01L 27/00 - |
D | H01L 2227/00 | Indexing scheme for devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate covered by group H01L 27/00 |
D | H01L 2227/32 | · Devices including an organic light emitting device [OLED], e.g. OLED display <administratively transferred to H10K 59/10 INV> |
D | H01L 2227/323 | · · Multistep processes for AMOLED <administratively transferred to H10K 59/1201 INV> |
D | H01L 2227/326 | · · Use of temporary substrate, e.g. for manufacturing of OLED displays having an inorganic driving circuit <administratively transferred to H10K 71/80 INV and H10K 59/1201 INV simultaneously> |
D | H01L 2251/00 | Indexing scheme relating to organic semiconductor devices covered by group H01L 51/00 |
D | H01L 2251/10 | · Processes specially adapted for the manufacture or treatment of organic semiconductor devices <administratively transferred to H10K 71/00> |
D | H01L 2251/105 | · · Patterning of a layer by embossing, e.g. to form trenches in an insulating layer <administratively transferred to H10K 71/821> |
D | H01L 2251/30 | · Materials <administratively transferred to H10K 2102/00 ADD> |
D | H01L 2251/301 | · · Inorganic materials <administratively transferred to H10K 2102/00 ADD> |
D | H01L 2251/303 | · · · Oxides, e.g. metal oxides <administratively transferred to H10K 2102/00 ADD> |
D | H01L 2251/305 | · · · · Transparent conductive oxides [TCO] <administratively transferred to H10K 2102/101 ADD> |
D | H01L 2251/306 | · · · · · composed of tin oxides, e.g. F doped SnO2 <administratively transferred to H10K 2102/102 ADD> |
D | H01L 2251/308 | · · · · · composed of indium oxides, e.g. ITO <administratively transferred to H10K 2102/103 ADD> |
D | H01L 2251/50 | · Organic light emitting devices <administratively transferred to H10K 2102/301 ADD> |
D | H01L 2251/53 | · · Structure <administratively transferred to H10K 2102/302 ADD> |
D | H01L 2251/5307 | · · · specially adapted for controlling the direction of light emission <administratively transferred to H10K 2102/3023 ADD> |
D | H01L 2251/5315 | · · · · Top emission <administratively transferred to H10K 2102/3026 ADD> |
D | H01L 2251/5323 | · · · · Two-side emission, i.e. TOLED <administratively transferred to H10K 2102/3031 ADD> |
D | H01L 2251/533 | · · · · End-face emission <administratively transferred to H10K 2102/3035 ADD> |
D | H01L 2251/5338 | · · · Flexible OLED <administratively transferred to H10K 2102/311 ADD> |
D | H01L 2251/5346 | · · · Graded composition <administratively transferred to H10K 2101/80 ADD> |
D | H01L 2251/5353 | · · · Inverted OLED <administratively transferred to H10K 2102/321 ADD> |
D | H01L 2251/5361 | · · · OLED lamp |
D | H01L 2251/5369 | · · · Nanoparticles used in whatever layer except emissive layer, e.g. in packaging <administratively transferred to H10K 2102/331 ADD> |
D | H01L 2251/5376 | · · · Combination of fluorescent and phosphorescent emission <administratively transferred to H10K 2101/27 ADD> |
D | H01L 2251/5384 | · · · Multiple hosts in the emissive layer <administratively transferred to H10K 2101/90 ADD> |
D | H01L 2251/5392 | · · · Short-circuit prevention <administratively transferred to H10K 2102/341 ADD> |
D | H01L 2251/55 | · · characterised by parameters <administratively transferred to H10K 2101/00 ADD> |
D | H01L 2251/552 | · · · HOMO-LUMO-EF <administratively transferred to H10K 2101/30 ADD> |
D | H01L 2251/554 | · · · Oxidation-reduction potential <administratively transferred to H10K 2101/50 ADD> |
D | H01L 2251/556 | · · · Temperature <administratively transferred to H10K 2102/361 ADD> |
D | H01L 2251/558 | · · · Thickness <administratively transferred to H10K 2102/351 ADD> |
D | H01L 2251/56 | · · Processes specially adapted for the manufacture or treatment of OLED <administratively transferred to H10K 71/00> |
D | H01L 2251/562 | · · · Aging <administratively transferred to H10K 71/831> |
D | H01L 2251/564 | · · · Application of alternating current <administratively transferred to H10K 71/841> |
D | H01L 2251/566 | · · · Division of substrate, e.g. for manufacturing of OLED displays <administratively transferred to H10K 71/851> |
D | H01L 2251/568 | · · · Repairing <administratively transferred to H10K 71/861> |
Project: RP11801 (H01M)
Electrochemical current or voltage generators not provided for in groups H01M 6/00 - H01M 12/00; Manufacture thereof NOTE This group does not cover solar cells, photocells, photoelectrochemical cells or photovoltaic cells, which are covered by the following groups:
|
Project: MP11922 (H01R)
M | Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [ |
U | Details of coupling devices of the kinds covered by groups H01R 12/70 or H01R 24/00 - H01R 33/00 | |
U | · specially adapted for high-frequency, e.g. structures providing an impedance match or phase match (non-coaxed protective earth or shield arrangements H01R 13/648; coaxed connectors specially adapted for high frequency H01R 24/40) | |
U | · · Means for preventing cross-talk | |
U | · · · by adding capacitive elements | |
M | · · · · on substrates, e.g. |
Project: MP11922 (H01S)
U | Semiconductor lasers (superluminescent diodes H01L 33/00) NOTE Attention is drawn to Special Rules of classification at C07F, which Special Rules indicate to which version of the periodic table of chemical elements CPC refers. In this group, the Periodic System used is the 8 group system indicated by Roman numerals in the Periodic Table thereunder. | |
U | · Structure or shape of the active region; Materials used for the active region | |
M | · · comprising quantum well or superlattice structures, e.g. single quantum well |
Project: MP11916 (H02B)
M | BOARDS, SUBSTATIONS NOTE This subclass covers boards, switchyards, switchgear or their installation, or the association of switching devices with each other or with other devices, e.g. transformers, fuses, meters or distribution boards; such associations constitute substations or distribution points. WARNING {In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme.} |
U | Frameworks, boards, panels, desks, casings; Details of substations or switching arrangements | |
U | · Boards, panels, desks; Parts thereof or accessories therefor | |
M | · · having associated enclosures, e.g. for preventing access to live parts | |
M | · Earthing arrangements (earthing arrangements for substations H02B 5/01 | |
M | · Circuit arrangements for boards or switchyards | |
M | · Casings; Parts thereof or accessories therefor | |
M | · Anti-seismic devices or installations |
U | Switchgear having carriage withdrawable for isolation | |
U | · Details | |
M | · · Isolating-contacts, e.g. mountings | |
M | · · Means for duplicate bus-bar selection | |
U | · with isolation by horizontal withdrawal | |
U | · · Withdrawal mechanism | |
M | · · · with interlock |
M | ||
U | · with metal casing | |
M | · · Safety arrangements, e.g. in case of excessive pressure or fire due to electrical defect | |
U | · · Gas-insulated switchgear | |
M | · · · Details of casing, e.g. gas tightness | |
M | · · · Features relating to the gas | |
M | · · · Means for detecting or reacting to mechanical or electrical defects |
M | Supervisory desks or panels for centralised control or display |
Project: MP11917 (H02G)
M | INSTALLATION OF ELECTRIC CABLES OR LINES, OR OF COMBINED OPTICAL AND ELECTRIC CABLES OR LINES NOTES 1. This subclass covers installation of communication cables or lines, including those comprising a combination of optical and electrical conductors, or of lightning conductors as well as installation of power cables or lines. 2. This subclass does not cover installation of purely optical cables, which is covered by groups {G02B 6/4401} , G02B 6/46. 3. In this subclass, the following expression is used with the meaning indicated:
4. In this subclass it is desirable to add indexing codes of group H02G 2200/00 whenever appropriate WARNING In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
U | Methods or apparatus specially adapted for installing, maintaining, repairing or dismantling electric cables or lines | |
U | · for overhead lines or cables | |
M | · · for mounting or stretching | |
M | · for laying cables, e.g. laying apparatus on vehicle | |
M | · for removing insulation or armouring from cables, e.g. from the end thereof | |
M | · for joining or terminating cables |
M | Installations of electric cables or lines or protective tubing therefor in or on buildings, equivalent structures or vehicles (installations of bus-bars H02G 5/00; overhead installations H02G 7/00; installations in or on the ground H02G 9/00 | |
U | · Details | |
M | · · Protective | |
M | · · Distribution boxes; Connection or junction boxes | |
M | · · · structurally associated with support for line-connecting terminals within the box | |
M | · | |
M | · Installations of cables or lines on walls, floors or ceilings | |
M | · Installations of cables or lines in walls, floors or ceilings |
U | Installations of bus-bars | |
M | · Partially-enclosed installations, e.g. in ducts and adapted for sliding or rolling current collection |
M | Overhead installations of electric lines or cables (installations of bus-bars H02G 5/00 | |
M | · Devices for removing snow or ice from lines or cables | |
M | · Spatial arrangements or dispositions of lines or cables on poles, posts |
M | Installations of electric cables or lines in or on the ground or water | |
M | · in cable chambers, e.g. in manhole | |
M | · supported on or from floats, e.g. in water |
M | Arrangements of electric cables or lines between relatively-movable parts |
M | Installations of lightning conductors; Fastening thereof to supporting structure |
U | Cable fittings | |
U | · Cable terminations (for gas- or oil-filled cables H02G 15/22) | |
M | · · Cable terminating boxes, frames | |
M | · Cable junctions ( | |
M | · · protected by boxes, e.g. by distribution, connection or junction boxes | |
U | · Cable fittings for cables filled with or surrounded by gas or oil (H02G 15/34 takes precedence) | |
M | · · structurally associated with devices for indicating the presence or location of non-electric faults |
Project: RP11761 (H02H)
U | Emergency protective circuit arrangements for limiting excess current or voltage without disconnection (structural association of protective devices with specific machines or apparatus, see the relevant subclass for the machine or apparatus) | |
U | · | |
· · {Physical layout, materials not provided for elsewhere (varistors H01C 7/12 |
Project: RP11760 (H02M)
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K 47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P) NOTES 1. This subclass covers only circuits or apparatus for the conversion of electric power, or arrangements for control or regulation of such circuits or apparatus. The electrotechnical elements employed are dealt within the appropriate subclasses, e.g. inductors, transformers H01F, capacitors, electrolytic rectifiers H01G, mercury rectifying or other discharge tubes H01J, semiconductor devices H01L, H10 impedance networks or resonant circuit not primarily concerned with the transfer of electric power H03H. 2. In this subclass, the following term is used with the meaning indicated:
WARNINGS 1. The following IPC groups are not in the CPC scheme. The subject matter for these IPC groups is classified in the following CPC groups:
2. In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
Project: RP11760 (H02N)
ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR NOTES 1. This subclass covers:
WARNING In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
Project: RP11761 (H02N)
Electric machines in general using piezo-electric effect, electrostriction or magnetostriction (generating mechanical vibrations in general B06B |
U | Holding or levitation devices using magnetic attraction or repulsion, not otherwise provided for (electric or magnetic devices for holding work on machine tools B23Q 3/15 {; monorail vehicle propulsion or suspension B60L 13/00}; sliding or levitation devices for railway systems B61B 13/08; material handling devices associated with conveyors incorporating devices with electrostatic or magnetic grippers B65G 47/92; separating thin or filamentary articles from piles using magnetic force B65H 3/16; delivering thin or filamentary articles from magnetic holders by air blast or suction B65H 29/24; bearings using magnetic or electric supporting means F16C 32/04; relieving bearing loads using magnetic means F16C 39/06; magnets H01F 7/00; dynamo-electric clutches or brakes H02K 49/00 {; electric furnaces with simultaneous levitation and heating H05B 6/32}) | |
· Repulsion by the Meissner effect ( |
Project: RP11761 , RP11801 (H02S)
GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRA-RED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES (obtaining electrical energy from radioactive sources G21H 1/12; light sensitive inorganic semiconductor devices H01L 31/00 |
Project: RP11761 (H02S)
U | PV power plants; Combinations of PV energy systems with other systems for the generation of electric power | |
· Thermophotovoltaic systems (photovoltaic cells specially adapted for conversion or sensing of infra-red [IR] radiation H01L 31/00 |
Project: RP11801 (H02S)
Structural details of PV modules other than those related to light conversion (semiconductor device aspects of modules of electrolytic light sensitive devices H01G 9/20, of inorganic PV modules H01L 31/00, of organic PV modules |
Project: RP11761 (H03B)
U | Generation of oscillations using amplifier with regenerative feedback from output to input (H03B 9/00, H03B 15/00 take precedence) | |
U | · with frequency-determining element being electromechanical resonator | |
· · being a piezo-electric resonator ( | ||
· · being a magnetostrictive resonator (H03B 5/42 takes precedence; selection of magneto-strictive material {H01F 1/00} |
U | Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects | |
· {using superconductivity effects ( |
Project: RP11761 (H03F)
U | Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements NOTE Groups H03F 3/20 - H03F 3/72 take precedence over groups H03F 3/02 - H03F 3/189. {This Note corresponds to IPC Note (1) relating to H03F 3/02 - H03F 3/189.} | |
· Amplifiers using transit-time effect in tubes or semiconductor devices (parametric amplifiers H03F 7/00 |
Project: RP11761 (H03H)
Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators (making single crystals C30B; selection of materials thereof H01L |
Project: MP11922 (H04B)
U | Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication NOTE In this group, non-optical transmission systems are classified in group H04B 10/90. | |
U | · Arrangements for monitoring or testing transmission systems; Arrangements for fault measurement of transmission systems | |
M | · · using a reflected signal, e.g. using optical time |
Project: MP11922 (H04H)
U | Arrangements for broadcast applications with a direct linking to broadcast information or broadcast space-time; Broadcast-related systems | |
U | · Systems specially adapted for using specific information, e.g. geographical or meteorological information | |
M | · · using |
Project: RP11761 (H04R)
Magnetostrictive transducers ( |
Piezo-electric transducers; Electrostrictive transducers ( |
Project: MP11942 (H04W)
M | WIRELESS COMMUNICATION NETWORKS (broadcast communication H04H; communication systems using wireless links for non-selective communication, e.g. wireless extensions H04M 1/72) NOTES 1. This subclass covers :
WARNING 1. In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. 2. The following IPC groups are not in the CPC scheme. The subject matter for these IPC groups is classified in the following CPC groups:
|
Project: MP11922 (H05B)
M | Circuit arrangements for operating light | |
M | · Circuit arrangements for operating LEDs comprising organic material, e.g. for operating organic light-emitting diodes [ |
Project: MP11776 (H05G)
M | X-RAY TECHNIQUE ( WARNINGS 1. The following IPC groups are not in the CPC scheme. The subject matter for these IPC groups is classified in the following CPC groups:
2. In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme. |
U | X-ray apparatus involving X-ray tubes; Circuits therefor | |
U | · Electrical details | |
U | · · Power supply arrangements for feeding the X-ray tube {(supply circuits with converters in general H02M; supply circuits for emitters and amplifiers H04B 1/16 - H04B 1/1623)} | |
U | · · · with single pulses | |
M | · · · · Obtaining pulses by using energy storage devices | |
M | · · Measuring, controlling | |
U | · · · Controlling | |
M | · · · · Supply voltage of the X-ray apparatus or tube | |
M | · · · · Anode current, heater current | |
M | · · · · Compensating the voltage drop occurring at the instant of switching-on of the apparatus |
M | Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma (X-ray lasers H01S 4/00 |
Project: RP11760 (H10)
N | SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR |
Project: RP11766 (H10B)
N | ELECTRONIC MEMORY DEVICES |
N | H10B 10/00 - H10B 12/00 | Volatile memory devices |
N | Static random access memory [SRAM] devices | |
N | · SRAM devices comprising bipolar components WARNING Group H10B 10/10 is incomplete pending reclassification of documents from groups H01L 27/1027, H01L 27/1028 and H10B 99/00. All groups listed in this Warning should be considered in order to perform a complete search. | |
N | · {comprising a MOSFET load element} | |
N | · · {the MOSFET being a thin film transistor [TFT]} | |
N | · {comprising a resistor load element} | |
N | · {Peripheral circuit regions} |
N | Dynamic random access memory [DRAM] devices | |
N | · {Manufacture or treatment} | |
N | · · {for one transistor one-capacitor [1T-1C] memory cells} | |
N | · · · {Making the capacitor or connections thereto} | |
N | · · · · {the capacitor extending over the transistor} | |
N | · · · · · {Making a connection between the transistor and the capacitor, e.g. plug} | |
N | · · · · {the capacitor extending under the transistor} | |
N | · · · · {the capacitor being in a trench in the substrate} | |
N | · · · · · {wherein the transistor is vertical} | |
N | · · · · · {Making a connection between the transistor and the capacitor, e.g. buried strap} | |
N | · · · · · {Making the trench} | |
N | · · · {Making the transistor} | |
N | · · · · {the transistor being at least partially in a trench in the substrate (vertical transistor in combination with a capacitor formed in a substrate trench H10B 12/0383)} | |
N | · · · · {the transistor being a FinFET} | |
N | · · {with simultaneous manufacture of the peripheral circuit region and memory cells} | |
N | · DRAM devices comprising bipolar components WARNING Group H10B 12/10 is incomplete pending reclassification of documents from groups H01L 27/1027, H01L 27/1028 and H10B 99/00. All groups listed in this Warning should be considered in order to perform a complete search. | |
N | · {DRAM devices comprising floating-body transistors, e.g. floating-body cells} | |
N | · {DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells} | |
N | · · {having a storage electrode stacked over the transistor} | |
N | · · · {with a bit line higher than the capacitor} | |
N | · · · {with the capacitor higher than a bit line} | |
N | · · · {the storage electrode having multiple segments} | |
N | · · {the capacitor extending under the transistor} | |
N | · · {the transistor being at least partially in a trench in the substrate} | |
N | · · {the transistor being a FinFET} | |
N | · · {the capacitor being at least partially in a trench in the substrate} | |
N | · · · {the capacitor extending under or around the transistor} | |
N | · · · {having a storage electrode extension located over the transistor} | |
N | · · {the capacitor and the transistor being in a same trench} | |
N | · · · {the transistor being vertical} | |
N | · · {Data lines or contacts therefor} | |
N | · · · {Bit lines} | |
N | · · · {Bit line contacts} | |
N | · · · {Word lines} | |
N | · {Peripheral circuit region structures} |
N | H10B 20/00 - H10B 69/00 | Non-volatile memory devices |
N | Read-only memory [ROM] devices | |
N | · ROM devices comprising bipolar components WARNING Group H10B 20/10 is incomplete pending reclassification of documents from groups H01L 27/1027, H01L 27/1028 and H10B 99/00. All groups listed in this Warning should be considered in order to perform a complete search. | |
Q | · Programmable ROM [PROM] devices comprising field-effect components (H10B 20/10 takes precedence) WARNING Group H10B 20/20 is impacted by reclassification into group H10B 20/25. Groups H10B 20/20 and H10B 20/25 should be considered in order to perform a complete search. | |
N | · · One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links WARNING Group H10B 20/25 is incomplete pending reclassification of documents from group H10B 20/20. Groups H10B 20/20 and H10B 20/25 should be considered in order to perform a complete search. | |
N | · {ROM only} | |
N | · · {having the source region and the drain region on the same level, e.g. lateral transistors} | |
N | · · · {Source electrode or drain electrode programmed} | |
N | · · · {Gate programmed, e.g. different gate material or no gate} | |
N | · · · · {Gate conductor programmed} | |
N | · · · · {Gate dielectric programmed, e.g. different thickness} | |
N | · · · {Doping programmed, e.g. mask ROM} | |
N | · · · · {Channel doping programmed} | |
N | · · · · {Source region or drain region doping programmed} | |
N | · · {having the source region and drain region on different levels, e.g. vertical channel} | |
N | · · {having transistors on different levels, e.g. 3D ROM} | |
N | · {Peripheral circuit regions} | |
N | · · {of memory structures of the ROM only type} |
N | Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates | |
N | · characterised by the top-view layout | |
N | · characterised by three-dimensional arrangements, e.g. with cells on different height levels | |
N | · · with source and drain on different levels, e.g. with sloping channels | |
N | · · · the channels comprising vertical portions, e.g. U-shaped channels | |
N | · characterised by the memory core region | |
N | · · with a cell select transistor, e.g. NAND | |
N | · characterised by the peripheral circuit region | |
N | · · of a memory region comprising a cell select transistor, e.g. NAND | |
N | · · Simultaneous manufacture of periphery and memory cells | |
N | · · · comprising only one type of peripheral transistor | |
N | · · · · with a control gate layer also being used as part of the peripheral transistor | |
N | · · · · with an inter-gate dielectric layer also being used as part of the peripheral transistor | |
N | · · · · with a floating-gate layer also being used as part of the peripheral transistor | |
N | · · · · with a tunnel dielectric layer also being used as part of the peripheral transistor | |
N | · · · comprising different types of peripheral transistor | |
N | · characterised by the boundary region between the core region and the peripheral circuit region | |
N | · the control gate being a doped region, e.g. single-poly memory cell | |
N | · the floating gate being an electrode shared by two or more components |
N | EEPROM devices comprising charge-trapping gate insulators | |
N | · characterised by the top-view layout | |
N | · characterised by three-dimensional arrangements, e.g. with cells on different height levels | |
N | · · with source and drain on different levels, e.g. with sloping channels | |
N | · · · the channels comprising vertical portions, e.g. U-shaped channels | |
N | · characterised by the memory core region | |
N | · · with cell select transistors, e.g. NAND | |
N | · characterised by the peripheral circuit region | |
N | · characterised by the boundary region between the core and peripheral circuit regions |
N | Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors | |
N | · characterised by the top-view layout | |
N | · characterised by the three-dimensional arrangements, e.g. with cells on different height levels | |
N | · characterised by the memory core region | |
N | · characterised by the peripheral circuit region | |
N | · characterised by the boundary region between the core and peripheral circuit regions |
N | Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors | |
N | · characterised by the top-view layout | |
N | · characterised by the three-dimensional arrangements, e.g. with cells on different height levels | |
N | · characterised by the memory core region | |
N | · characterised by the peripheral circuit region | |
N | · characterised by the boundary region between the core and peripheral circuit regions |
N | Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices WARNING Group H10B 61/00 is incomplete pending reclassification of documents from group H10N 59/00. Groups H10N 59/00 and H10B 61/00 should be considered in order to perform a complete search. | |
N | · {comprising components having two electrodes, e.g. diodes or MIM elements} | |
N | · {comprising components having three or more electrodes, e.g. transistors} | |
N | · · {of the field-effect transistor [FET] type} |
Q | Resistance change memory devices, e.g. resistive RAM [ReRAM] devices WARNING Group H10B 63/00 is impacted by reclassification into groups H10B 63/10 and H10N 79/00. All groups listed in this Warning should be considered in order to perform a complete search. | |
N | · Phase change RAM [PCRAM, PRAM] devices WARNING Group H10B 63/10 is incomplete pending reclassification of documents from group H10B 63/00. Groups H10B 63/00 and H10B 63/10 should be considered in order to perform a complete search. | |
N | · {comprising selection components having two electrodes, e.g. diodes} | |
N | · · {of the metal-insulator-metal type} | |
N | · · {of the Ovonic threshold switching type} | |
N | · {comprising selection components having three or more electrodes, e.g. transistors} | |
N | · · {of the bipolar type} | |
N | · · {of the vertical channel field-effect transistor type} | |
N | · {Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays} | |
N | · · {the switching components having a common active material layer} | |
N | · · {arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays} | |
N | · · · {the switching components being connected to a common vertical conductor} |
N | Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B 41/00 - H10B 63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices WARNING Group H10B 69/00 is incomplete pending reclassification of documents from groups H01L 27/1027 and H01L 27/1028. Groups H01L 27/1027, H01L 27/1028 and H10B 69/00 should be considered in order to perform a complete search. |
N | Assemblies of multiple devices comprising at least one memory device covered by this subclass WARNING Group H10B 80/00 is incomplete pending reclassification of documents from groups H01L 25/065, H01L 25/0652, H01L 25/0655, H01L 25/0657 and H01L 25/18. All groups listed in this Warning should be considered in order to perform a complete search. |
Q | Subject matter not provided for in other groups of this subclass WARNING Group H10B 99/00 is incomplete pending reclassification of documents from groups H01L 27/102 and H01L 27/1022. Group H10B 99/00 is also impacted by reclassification into groups H10B 10/10, H10B 12/10 and H10B 20/10. All groups listed in this Warning should be considered in order to perform a complete search. | |
N | · {Memory cells having a cross-point geometry} WARNING Group H10B 99/10 is incomplete pending reclassification of documents from group H01L 27/10. Groups H01L 27/10 and H10B 99/10 should be considered in order to perform a complete search. | |
N | · {comprising memory cells that only have passive resistors or passive capacitors} WARNING Group H10B 99/14 is incomplete pending reclassification of documents from group H01L 27/101. Groups H01L 27/101 and H10B 99/14 should be considered in order to perform a complete search. | |
N | · {comprising memory cells having diodes} WARNING Group H10B 99/16 is incomplete pending reclassification of documents from group H01L 27/1021. Groups H01L 27/1021 and H10B 99/16 should be considered in order to perform a complete search. | |
N | · {comprising memory cells having thyristors} WARNING Group H10B 99/20 is incomplete pending reclassification of documents from groups H01L 27/1027 and H01L 27/1028. Groups H01L 27/1027, H01L 27/1028 and H10B 99/20 should be considered in order to perform a complete search. | |
N | · {including field-effect components} WARNING Group H10B 99/22 is incomplete pending reclassification of documents from group H01L 27/105. Groups H01L 27/105 and H10B 99/22 should be considered in order to perform a complete search. |
Project: RP11801 (H10K)
N | ORGANIC ELECTRIC SOLID-STATE DEVICES NOTES 1. This subclass covers:
2. This subclass does not cover:
3. In this subclass, it is desirable to add the indexing codes of groups H10K 2101/00 - H10K 2102/00. |
N | H10K 10/00 - H10K 19/00 | Organic devices specially adapted for rectifying, amplifying, oscillating or switching |
Q | Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier (integrated devices or assemblies of multiple devices H10K 19/00) WARNING Group H10K 10/00 is impacted by reclassification into groups H10K 10/10, H10K 10/40 and H10K 10/43. All groups listed in this Warning should be considered in order to perform a complete search. | |
N | · Organic capacitors or resistors comprising a potential-jump barrier or surface barrier WARNING Group H10K 10/10 is incomplete pending reclassification of documents from group H10K 10/00. Groups H10K 10/00 and H10K 10/10 should be considered in order to perform a complete search. | |
N | · Organic diodes | |
N | · · Schottky diodes | |
N | · · Diodes comprising organic-organic junctions | |
N | · · Diodes comprising organic-inorganic heterojunctions | |
N | · Organic transistors WARNING Groups H10K 10/40 and H10K 10/43 are incomplete pending reclassification of documents from group H10K 10/00. Groups H10K 10/00, H10K 10/40 and H10K 10/43 should be considered in order to perform a complete search. | |
N | · · Bipolar transistors, e.g. organic bipolar junction transistors [OBJT] | |
N | · · Field-effect transistors, e.g. organic thin-film transistors [OTFT] (H10K 10/43 takes precedence) | |
N | · · · {Insulated gate field-effect transistors [IGFETs]} | |
N | · · · · {Lateral top-gate IGFETs comprising only a single gate} | |
N |