CPC Scheme - H10N ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

Version: 2024.01

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			CPC	COOPERATIVE PATENT CLASSIFICATION
			H10N	ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2024-01] NOTE In this subclass, the periodic system used is the I to VIII group system indicated in the Periodic Table under Note (3) of section C.

Thermoelectric or thermomagnetic devices [2023-02]

H10N 10/00

Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects (integrated devices or assemblies of multiple devices H10N 19/00) [2023-02]

H10N 10/01

Manufacture or treatment [2023-02]

H10N 10/10

operating with only the Peltier or Seebeck effects [2023-02]

H10N 10/13

. .

characterised by the heat-exchanging means at the junction [2023-02]

H10N 10/17

. .

characterised by the structure or configuration of the cell or thermocouple forming the device [2023-02]

H10N 10/80

Constructional details [2023-02]

H10N 10/81

. .

Structural details of the junction [2023-02]

H10N 10/813

. . .

the junction being separable, e.g. using a spring [2023-02]

H10N 10/817

. . .

the junction being non-separable, e.g. being cemented, sintered or soldered [2023-02]

H10N 10/82

. .

Connection of interconnections [2023-02]

H10N 10/85

. .

Thermoelectric active materials [2023-02]

H10N 10/851

. . .

comprising inorganic compositions [2023-02]

H10N 10/852

. . . .

comprising tellurium, selenium or sulfur [2023-02]

H10N 10/853

. . . .

comprising arsenic, antimony or bismuth (H10N 10/852 takes precedence) [2023-02]

H10N 10/854

. . . .

comprising only metals (H10N 10/852, H10N 10/853 take precedence) [2023-02]

H10N 10/855

. . . .

comprising compounds containing boron, carbon, oxygen or nitrogen [2023-02]

WARNING

Group H10N 10/855 is impacted by reclassification into group H10N 10/8556.
Groups H10N 10/855 and H10N 10/8556 should be considered in order to perform a complete search.

H10N 10/8552

. . . . .

{the compounds being superconducting} [2023-02]

H10N 10/8556

. . . .

{comprising compounds containing germanium or silicon} [2023-02]

WARNING

Group H10N 10/8556 is incomplete pending reclassification of documents from group H10N 10/855.
Groups H10N 10/855 and H10N 10/8556 should be considered in order to perform a complete search.

H10N 10/856

. . .

comprising organic compositions [2023-02]

H10N 10/857

. . .

comprising compositions changing continuously or discontinuously inside the material [2023-02]

H10N 15/00

Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect (integrated devices or assemblies of multiple devices H10N 19/00) [2023-02]

H10N 15/10

Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point [2023-02]

H10N 15/15

. .

{Selection of materials} [2023-02]

H10N 15/20

Thermomagnetic devices using thermal change of the magnetic permeability, e.g. working above and below the Curie point [2023-02]

H10N 19/00

Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N 10/00 - H10N 15/00 [2023-08]

WARNING

Group H10N 19/00 is incomplete pending reclassification of documents from groups H01L 25/04, H01L 25/065, H01L 25/0652, H01L 25/0655, H01L 25/0657, H01L 25/16, H01L 25/162, H01L 25/165, H01L 25/167 and H01L 25/18.
All groups listed in this Warning should be considered in order to perform a complete search.

H10N 19/101

{Multiple thermocouples connected in a cascade arrangement} [2023-02]

Piezoelectric, electrostrictive or magnetostrictive devices [2023-02]

H10N 30/00

Piezoelectric or electrostrictive devices (integrated devices or assemblies of multiple devices H10N 39/00) [2023-02]

WARNING

Group H10N 30/00 is impacted by reclassification into group H10N 35/00.
Groups H10N 30/00 and H10N 35/00 should be considered in order to perform a complete search.

H10N 30/01

Manufacture or treatment [2023-02]

H10N 30/02

. .

Forming enclosures or casings [2023-02]

H10N 30/03

. .

Assembling devices that include piezoelectric or electrostrictive parts [2023-02]

H10N 30/04

. .

Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning [2023-02]

H10N 30/045

. . .

by polarising [2023-02]

H10N 30/05

. .

Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes [2023-02]

H10N 30/053

. . .

by integrally sintering piezoelectric or electrostrictive bodies and electrodes [2023-02]

H10N 30/057

. . .

by stacking bulk piezoelectric or electrostrictive bodies and electrodes [2023-02]

H10N 30/06

. .

Forming electrodes or interconnections, e.g. leads or terminals [2023-02]

H10N 30/063

. . .

Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts [2023-02]

H10N 30/067

. . .

Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts [2023-02]

H10N 30/07

. .

Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base [2023-02]

H10N 30/071

. . .

Mounting of piezoelectric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate [2023-02]

H10N 30/072

. . .

by laminating or bonding of piezoelectric or electrostrictive bodies [2023-02]

H10N 30/073

. . . .

by fusion of metals or by adhesives [2023-02]

H10N 30/074

. . .

by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing [2023-02]

H10N 30/076

. . . .

by vapour phase deposition [2023-02]

H10N 30/077

. . . .

by liquid phase deposition [2023-02]

H10N 30/078

. . . . .

by sol-gel deposition [2023-02]

H10N 30/079

. . . .

using intermediate layers, e.g. for growth control [2023-02]

H10N 30/08

. .

Shaping or machining of piezoelectric or electrostrictive bodies [2023-02]

H10N 30/081

. . .

by coating or depositing using masks, e.g. lift-off [2023-02]

H10N 30/082

. . .

by etching, e.g. lithography [2023-02]

H10N 30/084

. . .

by moulding or extrusion [2023-02]

H10N 30/085

. . .

by machining [2023-02]

H10N 30/086

. . . .

by polishing or grinding [2023-02]

H10N 30/088

. . . .

by cutting or dicing [2023-02]

H10N 30/089

. . . .

by punching [2023-02]

H10N 30/09

. .

Forming piezoelectric or electrostrictive materials [2023-02]

H10N 30/092

. . .

Forming composite materials [2023-02]

H10N 30/093

. . .

Forming inorganic materials [2023-02]

H10N 30/095

. . . .

by melting [2023-02]

H10N 30/097

. . . .

by sintering [2023-02]

H10N 30/098

. . .

Forming organic materials [2023-02]

H10N 30/1051

{based on piezoelectric or electrostrictive films or coatings} [2023-02]

H10N 30/10513

. .

{characterised by the underlying bases, e.g. substrates} [2023-02]

H10N 30/10516

. . .

{Intermediate layers, e.g. barrier, adhesion or growth control buffer layers} [2023-02]

H10N 30/1061

{based on piezoelectric or electrostrictive fibres} [2023-02]

H10N 30/1071

{with electrical and mechanical input and output, e.g. having combined actuator and sensor parts} [2023-02]

H10N 30/20

with electrical input and mechanical output, e.g. functioning as actuators or vibrators [2023-02]

H10N 30/202

. .

{using longitudinal or thickness displacement combined with bending, shear or torsion displacement} [2023-02]

H10N 30/2023

. . .

{having polygonal or rectangular shape} [2023-02]

H10N 30/2027

. . .

{having cylindrical or annular shape} [2023-02]

H10N 30/204

. .

{using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders} [2023-02]

H10N 30/2041

. . .

{Beam type} [2023-02]

H10N 30/2042

. . . .

{Cantilevers, i.e. having one fixed end} [2023-02]

H10N 30/2043

. . . . .

{connected at their free ends, e.g. parallelogram type} [2023-02]

H10N 30/2044

. . . . .

{having multiple segments mechanically connected in series, e.g. zig-zag type} [2023-02]

H10N 30/2045

. . . . .

{adapted for in-plane bending displacement} [2023-02]

H10N 30/2046

. . . . .

{adapted for multi-directional bending displacement} [2023-02]

H10N 30/2047

. . .

{Membrane type} [2023-02]

H10N 30/2048

. . . .

{having non-planar shape} [2023-02]

H10N 30/206

. .

{using only longitudinal or thickness displacement, e.g. d₃₃ or d₃₁ type devices} [2023-02]

H10N 30/208

. .

{using shear or torsion displacement, e.g. d₁₅ type devices} [2023-02]

H10N 30/30

with mechanical input and electrical output, e.g. functioning as generators or sensors [2023-02]

H10N 30/302

. .

{Sensors} [2023-02]

H10N 30/304

. .

{Beam type} [2023-02]

H10N 30/306

. . .

{Cantilevers} [2023-02]

H10N 30/308

. .

{Membrane type} [2023-02]

H10N 30/40

with electrical input and electrical output, e.g. functioning as transformers [2023-02]

H10N 30/50

having a stacked or multilayer structure [2023-02]

H10N 30/501

. .

{with non-rectangular cross-section in stacking direction, e.g. polygonal, trapezoidal} [2023-02]

H10N 30/503

. .

{with non-rectangular cross-section orthogonal to the stacking direction, e.g. polygonal, circular} [2023-02]

H10N 30/505

. . .

{Annular cross-section} [2023-02]

H10N 30/506

. .

{of cylindrical shape with stacking in radial direction, e.g. coaxial or spiral type rolls} [2023-02]

H10N 30/508

. .

{adapted for alleviating internal stress, e.g. cracking control layers} [2023-02]

H10N 30/60

having a coaxial cable structure [2023-02]

H10N 30/80

Constructional details [2023-02]

WARNING

Group H10N 30/80 is impacted by reclassification into group H10N 35/80.
Groups H10N 30/80 and H10N 35/80 should be considered in order to perform a complete search.

H10N 30/802

. .

{Drive or control circuitry or methods for piezoelectric or electrostrictive devices not otherwise provided for} [2023-02]

H10N 30/804

. . .

{for piezoelectric transformers (conversion of DC or AC power H02M; for operating discharge lamps H05B 41/282)} [2023-02]

H10N 30/85

. .

Piezoelectric or electrostrictive active materials [2023-02]

WARNING

Group H10N 30/85 is impacted by reclassification into group H10N 35/85.
Groups H10N 30/85 and H10N 35/85 should be considered in order to perform a complete search.

H10N 30/852

. . .

{Composite materials, e.g. having 1-3 or 2-2 type connectivity} [2023-02]

H10N 30/853

. . .

Ceramic compositions [2023-02]

H10N 30/8536

. . . .

{Alkaline earth metal based oxides, e.g. barium titanates} [2023-02]

H10N 30/8542

. . . .

{Alkali metal based oxides, e.g. lithium, sodium or potassium niobates} [2023-02]

H10N 30/8548

. . . .

{Lead based oxides} [2023-02]

H10N 30/8554

. . . . .

{Lead zirconium titanate based} [2023-02]

H10N 30/8561

. . . .

{Bismuth based oxides} [2023-02]

H10N 30/857

. . .

Macromolecular compositions [2023-02]

H10N 30/87

. .

Electrodes or interconnections, e.g. leads or terminals [2023-02]

H10N 30/871

. . .

{Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes} [2023-02]

H10N 30/872

. . .

{Connection electrodes of multilayer piezoelectric or electrostrictive devices, e.g. external electrodes} [2023-02]

H10N 30/874

. . . .

{embedded within piezoelectric or electrostrictive material, e.g. via connections} [2023-02]

H10N 30/875

. . .

{Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins} [2023-02]

H10N 30/877

. . .

{Conductive materials (in general H01B 1/00)} [2023-02]

H10N 30/878

. . . .

{the principal material being non-metallic, e.g. oxide or carbon based} [2023-02]

H10N 30/88

. .

Mounts; Supports; Enclosures; Casings [2023-02]

H10N 30/883

. . .

{Further insulation means against electrical, physical or chemical damage, e.g. protective coatings} [2023-02]

H10N 30/886

. . .

{Mechanical prestressing means, e.g. springs (springs in general F16F 1/00)} [2023-02]

H10N 35/00

Magnetostrictive devices (integrated devices or assemblies of multiple devices H10N 39/00) [2023-02]

WARNING

Group H10N 35/00 is incomplete pending reclassification of documents from group H10N 30/00.
Groups H10N 30/00 and H10N 35/00 should be considered in order to perform a complete search.

H10N 35/01

Manufacture or treatment [2023-02]

H10N 35/101

{with mechanical input and electrical output, e.g. generators, sensors} [2023-02]

H10N 35/80

Constructional details [2023-02]

WARNING

Group H10N 35/80 is incomplete pending reclassification of documents from group H10N 30/80.
Groups H10N 30/80 and H10N 35/80 should be considered in order to perform a complete search.

H10N 35/85

. .

Magnetostrictive active materials [2023-02]

WARNING

Group H10N 35/85 is incomplete pending reclassification of documents from group H10N 30/85.
Groups H10N 30/85 and H10N 35/85 should be considered in order to perform a complete search.

H10N 39/00

Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N 30/00 – H10N 35/00 [2023-08]

WARNING

Group H10N 39/00 is incomplete pending reclassification of documents from groups H01L 25/04, H01L 25/065, H01L 25/0652, H01L 25/0655, H01L 25/0657, H01L 25/16, H01L 25/162, H01L 25/165, H01L 25/167 and H01L 25/18.
All groups listed in this Warning should be considered in order to perform a complete search.

Galvanomagnetic or similar magnetic-effect devices [2023-02]

H10N 50/00

Galvanomagnetic devices (Hall-effect devices H10N 52/00; integrated devices or assemblies of multiple devices H10N 59/00) [2023-02]

WARNING

Group H10N 50/00 is impacted by reclassification into group H10N 50/20.
Groups H10N 50/00 and H10N 50/20 should be considered in order to perform a complete search.

H10N 50/01

Manufacture or treatment [2023-02]

H10N 50/10

Magnetoresistive devices [2023-02]

H10N 50/20

Spin-polarised current-controlled devices (magnetoresistive devices H10N 50/10) [2023-02]

WARNING

Group H10N 50/20 is incomplete pending reclassification of documents from group H10N 50/00.
Groups H10N 50/00 and H10N 50/20 should be considered in order to perform a complete search.

H10N 50/80

Constructional details [2023-02]

H10N 50/85

. .

Magnetic active materials [2023-02]

WARNING

Group H10N 50/85 is impacted by reclassification into group H10N 52/85.
Groups H10N 50/85 and H10N 52/85 should be considered in order to perform a complete search.

H10N 52/00

Hall-effect devices (integrated devices or assemblies of multiple devices H10N 59/00) [2023-02]

H10N 52/01

Manufacture or treatment [2023-02]

H10N 52/101

{Semiconductor Hall-effect devices} [2023-02]

H10N 52/80

Constructional details [2023-02]

H10N 52/85

. .

Magnetic active materials [2023-02]

WARNING

Group H10N 52/85 is incomplete pending reclassification of documents from group H10N 50/85.
Groups H10N 50/85 and H10N 52/85 should be considered in order to perform a complete search.

H10N 59/00

Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N 50/00 - H10N 52/00 (MRAM devices H10B 61/00) [2023-08]

WARNING

Group H10N 59/00 is incomplete pending reclassification of documents from groups H01L 25/04, H01L 25/065, H01L 25/0652, H01L 25/0655, H01L 25/0657, H01L 25/16, H01L 25/162, H01L 25/165, H01L 25/167 and H01L 25/18.
All groups listed in this Warning should be considered in order to perform a complete search.
Group H10N 59/00 is also impacted by reclassification into group H10B 61/00.
All groups listed in this Warning should be considered in order to perform a complete search.

Superconducting devices [2023-02]

H10N 60/00

Superconducting devices (integrated devices or assemblies of multiple devices H10N 69/00) [2023-02]

H10N 60/01

Manufacture or treatment [2023-02]

H10N 60/0128

. .

{of composite superconductor filaments (comprising copper oxide H10N 60/0268)} [2023-02]

H10N 60/0156

. .

{of devices comprising Nb or an alloy of Nb with one or more of the elements of group 4, e.g. Ti, Zr, Hf} [2023-02]

H10N 60/0184

. .

{of devices comprising intermetallic compounds of type A-15, e.g. Nb₃Sn} [2023-02]

H10N 60/0212

. .

{of devices comprising molybdenum chalcogenides} [2023-02]

H10N 60/0241

. .

{of devices comprising nitrides or carbonitrides} [2023-02]

H10N 60/0268

. .

{of devices comprising copper oxide} [2023-02]

H10N 60/0296

. . .

{Processes for depositing or forming superconductor layers} [2023-02]

H10N 60/0324

. . . .

{from a solution} [2023-02]

H10N 60/0352

. . . .

{from a suspension or slurry, e.g. screen printing; doctor blade casting} [2023-02]

H10N 60/0381

. . . .

{by evaporation independent of heat source, e.g. MBE} [2023-02]

H10N 60/0408

. . . .

{by sputtering} [2023-02]

H10N 60/0436

. . . .

{by chemical vapour deposition [CVD]} [2023-02]

H10N 60/0464

. . . . .

{by metalloorganic chemical vapour deposition [MOCVD]} [2023-02]

H10N 60/0492

. . . .

{by thermal spraying, e.g. plasma deposition} [2023-02]

H10N 60/0521

. . . .

{by pulsed laser deposition, e.g. laser sputtering; laser ablation} [2023-02]

H10N 60/0548

. . . .

{by precursor deposition followed by after-treatment, e.g. oxidation} [2023-02]

H10N 60/0576

. . . .

{characterised by the substrate} [2023-02]

H10N 60/0604

. . . . .

{Monocrystalline substrates, e.g. epitaxial growth} [2023-02]

H10N 60/0632

. . . . .

{Intermediate layers, e.g. for growth control} [2023-02]

H10N 60/0661

. . .

{After-treatment, e.g. patterning} [2023-02]

H10N 60/0688

. . . .

{Etching} [2023-02]

H10N 60/0716

. . . .

{Passivation} [2023-02]

H10N 60/0744

. . .

{Manufacture or deposition of contacts or electrodes} [2023-02]

H10N 60/0772

. . .

{Processes including the use of precursors} [2023-02]

H10N 60/0801

. . .

{Processes peculiar to the manufacture or treatment of filaments or composite wires} [2023-02]

H10N 60/0828

. . .

{Introducing flux pinning centres} [2023-02]

H10N 60/0856

. .

{of devices comprising metal borides, e.g. MgB₂} [2023-02]

H10N 60/0884

. .

{Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam, X-rays (irradiation devices G21K, H01J)} [2023-02]

H10N 60/0912

. .

{of Josephson-effect devices} [2023-02]

H10N 60/0941

. . .

{comprising high-T_c ceramic materials} [2023-02]

H10N 60/10

Junction-based devices [2023-02]

H10N 60/11

. .

{Single electron tunnelling devices} [2023-02]

H10N 60/12

. .

Josephson-effect devices [2023-02]

H10N 60/124

. . .

{comprising high-T_c ceramic materials} [2023-02]

H10N 60/126

. . .

{comprising metal borides, e.g. MgB₂} [2023-02]

H10N 60/128

. .

{having three or more electrodes, e.g. transistor-like structures} [2023-02]

H10N 60/20

Permanent superconducting devices [2023-02]

H10N 60/202

. .

{comprising metal borides, e.g. MgB₂} [2023-02]

H10N 60/203

. .

{comprising high-T_c ceramic materials} [2023-02]

H10N 60/205

. .

{having three or more electrodes, e.g. transistor-like structures (H10N 60/128 takes precedence)} [2023-02]

H10N 60/207

. . .

{Field effect devices} [2023-02]

H10N 60/208

. .

{based on Abrikosov vortices} [2023-02]

H10N 60/30

Devices switchable between superconducting and normal states [2023-02]

H10N 60/35

. .

Cryotrons [2023-02]

H10N 60/355

. . .

Power cryotrons [2023-02]

H10N 60/80

Constructional details [2023-02]

H10N 60/805

. .

{for Josephson-effect devices} [2023-02]

H10N 60/81

. .

Containers; Mountings [2023-02]

H10N 60/815

. . .

{for Josephson-effect devices} [2023-02]

H10N 60/82

. .

Current path [2023-02]

H10N 60/83

. .

Element shape [2023-02]

H10N 60/84

. .

Switching means for devices switchable between superconducting and normal states [2023-02]

H10N 60/85

. .

Superconducting active materials [2023-02]

H10N 60/851

. . .

{Organic materials} [2023-02]

H10N 60/853

. . . .

{Fullerene superconductors, e.g. soccerball-shaped allotrope of carbon, e.g. C₆₀, C₉₄ (fullerenes in general C07C 13/00)} [2023-02]

H10N 60/855

. . .

{Ceramic materials} [2023-02]

H10N 60/857

. . . .

{comprising copper oxide} [2023-02]

H10N 60/858

. . . . .

{Multi-layered structures, e.g. superlattices} [2023-02]

H10N 60/99

{Alleged superconductivity} [2023-02]

H10N 69/00

Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N 60/00 [2023-08]

WARNING

Group H10N 69/00 is incomplete pending reclassification of documents from groups H01L 25/04, H01L 25/065, H01L 25/0652, H01L 25/0655, H01L 25/0657, H01L 25/16, H01L 25/162, H01L 25/165, H01L 25/167 and H01L 25/18.
All groups listed in this Warning should be considered in order to perform a complete search.

Other electric solid-state devices [2023-02]

H10N 70/00

Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N 79/00) [2024-01]

H10N 70/011

{Manufacture or treatment of multistable switching devices} [2023-02]

H10N 70/021

. .

{Formation of the switching material, e.g. layer deposition} [2023-02]

H10N 70/023

. . .

{by chemical vapor deposition, e.g. MOCVD, ALD} [2023-02]

H10N 70/026

. . .

{by physical vapor deposition, e.g. sputtering} [2023-02]

H10N 70/028

. . .

{by conversion of electrode material, e.g. oxidation} [2023-02]

H10N 70/041

. .

{Modification of the switching material, e.g. post-treatment, doping} [2023-02]

H10N 70/043

. . .

{by implantation} [2023-02]

H10N 70/046

. . .

{by diffusion, e.g. photo-dissolution} [2023-02]

H10N 70/061

. .

{Patterning of the switching material} [2023-02]

H10N 70/063

. . .

{by etching of pre-deposited switching material layers, e.g. lithography} [2023-02]

H10N 70/066

. . .

{by filling of openings, e.g. damascene method} [2023-02]

H10N 70/068

. . .

{by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers} [2023-02]

H10N 70/10

Solid-state travelling-wave devices [2023-02]

H10N 70/151

{Charge density wave transport devices} [2023-02]

H10N 70/20

Multistable switching devices, e.g. memristors [2023-02]

H10N 70/231

. .

{based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect} [2023-02]

H10N 70/235

. . .

{between different crystalline phases, e.g. cubic and hexagonal} [2023-02]

H10N 70/24

. .

{based on migration or redistribution of ionic species, e.g. anions, vacancies} [2023-02]

H10N 70/245

. . .

{the species being metal cations, e.g. programmable metallization cells} [2023-02]

H10N 70/25

. .

{based on bulk electronic defects, e.g. trapping of electrons} [2023-02]

H10N 70/253

. .

{having three or more terminals, e.g. transistor-like devices} [2023-02]

H10N 70/257

. .

{based on radiation or particle beam assisted switching, e.g. optically controlled devices} [2023-02]

H10N 70/801

{Constructional details of multistable switching devices} [2023-02]

H10N 70/821

. .

{Device geometry} [2023-02]

H10N 70/823

. . .

{adapted for essentially horizontal current flow, e.g. bridge type devices} [2023-02]

H10N 70/826

. . .

{adapted for essentially vertical current flow, e.g. sandwich or pillar type devices} [2023-02]

H10N 70/8265

. . . .

{on sidewalls of dielectric structures, e.g. mesa or cup type devices} [2023-02]

H10N 70/828

. . .

{Current flow limiting means within the switching material region, e.g. constrictions} [2023-02]

H10N 70/841

. .

{Electrodes} [2023-02]

H10N 70/8413

. . .

{adapted for resistive heating} [2023-02]

H10N 70/8416

. . .

{adapted for supplying ionic species} [2023-02]

H10N 70/8418

. . .

{adapted for focusing electric field or current, e.g. tip-shaped} [2023-02]

H10N 70/861

. .

{Thermal details} [2023-02]

H10N 70/8613

. . .

{Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel} [2023-02]

H10N 70/8616

. . .

{Thermal insulation means} [2023-02]

H10N 70/881

. .

{Switching materials} [2023-02]

H10N 70/882

. . .

{Compounds of sulfur, selenium or tellurium, e.g. chalcogenides} [2023-02]

H10N 70/8822

. . . .

{Sulfides, e.g. CuS} [2023-02]

H10N 70/8825

. . . .

{Selenides, e.g. GeSe} [2023-02]

H10N 70/8828

. . . .

{Tellurides, e.g. GeSbTe} [2023-02]

H10N 70/883

. . .

{Oxides or nitrides} [2023-02]

H10N 70/8833

. . . .

{Binary metal oxides, e.g. TaO_x} [2023-02]

H10N 70/8836

. . . .

{Complex metal oxides, e.g. perovskites, spinels} [2023-02]

H10N 70/884

. . .

{Other compounds of groups 13-15, e.g. elemental or compound semiconductors} [2023-02]

H10N 70/8845

. . . .

{Carbon or carbides} [2023-02]

H10N 79/00

Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N 70/00 (ReRAM devices H10B 63/00; PCRAM devices H10B 63/10) [2023-08]

WARNING

Group H10N 79/00 is incomplete pending reclassification of documents from groups H01L 25/04, H01L 25/065, H01L 25/0652, H01L 25/0655, H01L 25/0657, H01L 25/16, H01L 25/162, H01L 25/165, H01L 25/167, H01L 25/18 and H10B 63/00.
All groups listed in this Warning should be considered in order to perform a complete search.

H10N 80/00

Bulk negative-resistance effect devices (integrated devices or assemblies of multiple devices H10N 89/00) [2023-02]

H10N 80/01

{Manufacture or treatment} [2023-02]

H10N 80/10

Gunn-effect devices [2023-02]

H10N 80/103

. .

{controlled by electromagnetic radiation} [2023-02]

H10N 80/107

. .

{Gunn diodes} [2023-02]

H10N 89/00

Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group H10N 80/00 [2023-08]

WARNING

Group H10N 89/00 is incomplete pending reclassification of documents from groups H01L 25/04, H01L 25/065, H01L 25/0652, H01L 25/0655, H01L 25/0657, H01L 25/16, H01L 25/162, H01L 25/165, H01L 25/167 and H01L 25/18.
All groups listed in this Warning should be considered in order to perform a complete search.

H10N 89/02

{Gunn-effect devices} [2023-02]

H10N 97/00

Electric solid-state thin-film or thick-film devices, not otherwise provided for [2023-02]

H10N 99/00

Subject matter not provided for in other groups of this subclass [2023-02]

H10N 99/03

{Devices using Mott metal-insulator transition, e.g. field effect transistors} [2023-02]

H10N 99/05

{Quantum devices, e.g. quantum interference devices, metal single electron transistors} [2023-02]

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