Version: 2024.08
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CPC | COOPERATIVE PATENT CLASSIFICATION | |||
| H10N | ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR [2024-01] NOTE
|
Thermoelectric or thermomagnetic devices [2023-02] |
H10N 10/00 | Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects (integrated devices or assemblies of multiple devices H10N 19/00) [2023-02] |
H10N 10/01 | . | Manufacture or treatment [2023-02] |
H10N 10/10 | . | operating with only the Peltier or Seebeck effects [2023-02] |
H10N 10/13 | . . | characterised by the heat-exchanging means at the junction [2023-02] |
H10N 10/17 | . . | characterised by the structure or configuration of the cell or thermocouple forming the device [2023-02] |
H10N 10/80 | . | Constructional details [2023-02] |
H10N 10/81 | . . | Structural details of the junction [2023-02] |
H10N 10/813 | . . . | the junction being separable, e.g. using a spring [2023-02] |
H10N 10/817 | . . . | the junction being non-separable, e.g. being cemented, sintered or soldered [2023-02] |
H10N 10/82 | . . | Connection of interconnections [2023-02] |
H10N 10/85 | . . | Thermoelectric active materials [2023-02] |
H10N 10/851 | . . . | comprising inorganic compositions [2023-02] |
H10N 10/852 | . . . . | comprising tellurium, selenium or sulfur [2023-02] |
H10N 10/853 | . . . . |
H10N 10/854 | . . . . |
| H10N 10/855 | . . . . | comprising compounds containing boron, carbon, oxygen or nitrogen [2023-02] WARNING
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H10N 10/8552 | . . . . . | {the compounds being superconducting} [2023-02] |
| H10N 10/8556 | . . . . | {comprising compounds containing germanium or silicon} [2023-02] WARNING
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H10N 10/856 | . . . | comprising organic compositions [2023-02] |
H10N 10/857 | . . . | comprising compositions changing continuously or discontinuously inside the material [2023-02] |
H10N 15/00 | Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect (integrated devices or assemblies of multiple devices H10N 19/00) [2023-02] |
H10N 15/10 | . | Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point [2023-02] |
H10N 15/15 | . . | {Thermoelectric active materials} [2024-05] |
H10N 15/20 | . | Thermomagnetic devices using thermal change of the magnetic permeability, e.g. working above and below the Curie point [2023-02] |
| H10N 19/00 | Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N 10/00 - H10N 15/00 [2023-08] WARNING
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H10N 19/101 | . | {Multiple thermocouples connected in a cascade arrangement} [2023-02] |
Piezoelectric, electrostrictive or magnetostrictive devices [2023-02] |
| H10N 30/00 | Piezoelectric or electrostrictive devices (integrated devices or assemblies of multiple devices H10N 39/00) [2023-02] WARNING
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H10N 30/01 | . | Manufacture or treatment [2023-02] |
H10N 30/02 | . . | Forming enclosures or casings [2023-02] |
H10N 30/03 | . . | Assembling devices that include piezoelectric or electrostrictive parts [2023-02] |
H10N 30/04 | . . | Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning [2023-02] |
H10N 30/045 | . . . | by polarising [2023-02] |
H10N 30/05 | . . | Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes [2023-02] |
H10N 30/053 | . . . | by integrally sintering piezoelectric or electrostrictive bodies and electrodes [2023-02] |
H10N 30/057 | . . . | by stacking bulk piezoelectric or electrostrictive bodies and electrodes [2023-02] |
H10N 30/06 | . . | Forming electrodes or interconnections, e.g. leads or terminals [2023-02] |
H10N 30/063 | . . . | Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts [2023-02] |
H10N 30/067 | . . . | Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts [2023-02] |
H10N 30/07 | . . | Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base [2023-02] |
H10N 30/071 | . . . | Mounting of piezoelectric or electrostrictive parts together with semiconductor elements, or other circuit elements, on a common substrate [2023-02] |
H10N 30/072 | . . . | by laminating or bonding of piezoelectric or electrostrictive bodies [2023-02] |
H10N 30/073 | . . . . | by fusion of metals or by adhesives [2023-02] |
H10N 30/074 | . . . | by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing [2023-02] |
H10N 30/076 | . . . . | by vapour phase deposition [2023-02] |
H10N 30/077 | . . . . | by liquid phase deposition [2023-02] |
H10N 30/078 | . . . . . | by sol-gel deposition [2023-02] |
H10N 30/079 | . . . . | using intermediate layers, e.g. for growth control [2023-02] |
H10N 30/08 | . . | Shaping or machining of piezoelectric or electrostrictive bodies [2023-02] |
H10N 30/081 | . . . | by coating or depositing using masks, e.g. lift-off [2023-02] |
H10N 30/082 | . . . | by etching, e.g. lithography [2023-02] |
H10N 30/084 | . . . | by moulding or extrusion [2023-02] |
H10N 30/085 | . . . | by machining [2023-02] |
H10N 30/086 | . . . . | by polishing or grinding [2023-02] |
H10N 30/088 | . . . . | by cutting or dicing [2023-02] |
H10N 30/089 | . . . . | by punching [2023-02] |
H10N 30/09 | . . | Forming piezoelectric or electrostrictive materials [2023-02] |
H10N 30/101 | . | {with electrical and mechanical input and output, e.g. having combined actuator and sensor parts} [2024-05] |
H10N 30/20 | . | with electrical input and mechanical output, e.g. functioning as actuators or vibrators [2023-02] |
H10N 30/202 | . . | {using longitudinal or thickness displacement combined with bending, shear or torsion displacement} [2023-02] |
H10N 30/2023 | . . . | {having polygonal or rectangular shape} [2023-02] |
H10N 30/2027 | . . . | {having cylindrical or annular shape} [2023-02] |
H10N 30/204 | . . | {using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders} [2023-02] |
H10N 30/2041 | . . . | {Beam type} [2023-02] |
H10N 30/2042 | . . . . | {Cantilevers, i.e. having one fixed end} [2023-02] |
H10N 30/2043 | . . . . . | {connected at their free ends, e.g. parallelogram type} [2023-02] |
H10N 30/2044 | . . . . . | {having multiple segments mechanically connected in series, e.g. zig-zag type} [2023-02] |
H10N 30/2045 | . . . . . | {adapted for in-plane bending displacement} [2023-02] |
H10N 30/2046 | . . . . . | {adapted for multi-directional bending displacement} [2023-02] |
H10N 30/2047 | . . . | {Membrane type} [2023-02] |
H10N 30/2048 | . . . . | {having non-planar shape} [2023-02] |
H10N 30/206 | . . | {using only longitudinal or thickness displacement, e.g. d33 or d31 type devices} [2023-02] |
H10N 30/208 | . . | {using shear or torsion displacement, e.g. d15 type devices} [2023-02] |
H10N 30/30 | . | with mechanical input and electrical output, e.g. functioning as generators or sensors [2023-02] |
H10N 30/302 | . . | {Sensors} [2023-02] |
H10N 30/304 | . . | {Beam type} [2023-02] |
H10N 30/306 | . . . | {Cantilevers} [2023-02] |
H10N 30/308 | . . | {Membrane type} [2023-02] |
H10N 30/40 | . | with electrical input and electrical output, e.g. functioning as transformers [2023-02] |
H10N 30/50 | . | having a stacked or multilayer structure [2023-02] |
H10N 30/501 | . . | {having a non-rectangular cross-section in a plane parallel to the stacking direction, e.g. polygonal or trapezoidal in side view} [2024-05] |
H10N 30/503 | . . | {having a non-rectangular cross-section in a plane orthogonal to the stacking direction, e.g. polygonal or circular in top view} [2024-05] |
H10N 30/505 | . . . | {the cross-section being annular} [2024-05] |
H10N 30/506 | . . | {having a cylindrical shape and having stacking in the radial direction, e.g. coaxial or spiral type rolls} [2024-05] |
H10N 30/508 | . . | {adapted for alleviating internal stress, e.g. cracking control layers} [2023-02] |
H10N 30/60 | . | having a coaxial cable structure [2023-02] |
H10N 30/702 | . | {based on piezoelectric or electrostrictive fibres} [2024-05] |
H10N 30/704 | . | {based on piezoelectric or electrostrictive films or coatings} [2024-05] |
H10N 30/706 | . . | {characterised by the underlying bases, e.g. substrates} [2024-05] |
H10N 30/708 | . . . | {Intermediate layers, e.g. barrier, adhesion or growth control buffer layers} [2024-05] |
| H10N 30/80 | . | Constructional details [2023-02] WARNING
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H10N 30/802 | . . | {Circuitry or processes for operating piezoelectric or electrostrictive devices not otherwise provided for, e.g. drive circuits} [2024-05] |
H10N 30/804 | . . . | {for piezoelectric transformers} [2024-05] |
| H10N 30/85 | . . | Piezoelectric or electrostrictive active materials [2023-02] WARNING
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H10N 30/852 | . . . | {Composite materials, e.g. having 1-3 or 2-2 type connectivity} [2023-02] |
H10N 30/853 | . . . | Ceramic compositions [2023-02] |
H10N 30/8536 | . . . . | {Alkaline earth metal based oxides, e.g. barium titanates} [2023-02] |
H10N 30/8542 | . . . . | {Alkali metal based oxides, e.g. lithium, sodium or potassium niobates} [2023-02] |
H10N 30/8548 | . . . . | {Lead-based oxides} [2024-05] |
H10N 30/8554 | . . . . . | {Lead-zirconium titanate [PZT] based} [2024-05] |
H10N 30/8561 | . . . . | {Bismuth-based oxides} [2024-05] |
H10N 30/857 | . . . | Macromolecular compositions [2023-02] |
H10N 30/87 | . . | Electrodes or interconnections, e.g. leads or terminals [2023-02] |
H10N 30/871 | . . . | {Single-layered electrodes of multilayer piezoelectric or electrostrictive devices, e.g. internal electrodes} [2023-02] |
H10N 30/872 | . . . | {Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices} [2024-05] |
H10N 30/874 | . . . . | {embedded within piezoelectric or electrostrictive material, e.g. via connections} [2023-02] |
H10N 30/875 | . . . | {Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins} [2023-02] |
H10N 30/877 | . . . | {Conductive materials} [2024-05] |
H10N 30/878 | . . . . | {the principal material being non-metallic, e.g. oxide or carbon based} [2023-02] |
H10N 30/88 | . . | Mounts; Supports; Enclosures; Casings [2023-02] |
H10N 30/883 | . . . | {Additional insulation means preventing electrical, physical or chemical damage, e.g. protective coatings} [2024-05] |
H10N 30/886 | . . . | {Additional mechanical prestressing means, e.g. springs} [2024-05] |
| H10N 35/00 | Magnetostrictive devices (integrated devices or assemblies of multiple devices H10N 39/00) [2023-02] WARNING
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H10N 35/01 | . | Manufacture or treatment [2023-02] |
H10N 35/101 | . | {with mechanical input and electrical output, e.g. generators, sensors} [2023-02] |
| H10N 35/80 | . | Constructional details [2023-02] WARNING
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| H10N 35/85 | . . | Magnetostrictive active materials [2023-02] WARNING
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| H10N 39/00 | Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N 30/00 – H10N 35/00 [2023-08] WARNING
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Galvanomagnetic or similar magnetic-effect devices [2023-02] |
| H10N 50/00 | Galvanomagnetic devices (Hall-effect devices H10N 52/00; integrated devices or assemblies of multiple devices H10N 59/00) [2023-02] WARNING
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H10N 50/01 | . | Manufacture or treatment [2023-02] |
H10N 50/10 | . | Magnetoresistive devices [2023-02] |
| H10N 50/20 | . | WARNING
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H10N 50/80 | . | Constructional details [2023-02] |
| H10N 50/85 | . . | Magnetic active materials [2023-02] WARNING
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H10N 52/00 |
H10N 52/01 | . | Manufacture or treatment [2023-02] |
H10N 52/101 | . | {Semiconductor Hall-effect devices} [2023-02] |
H10N 52/80 | . | Constructional details [2023-02] |
| H10N 52/85 | . . | Magnetic active materials [2023-02] WARNING
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| H10N 59/00 | Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N 50/00 - H10N 52/00 (MRAM devices H10B 61/00) [2023-08] WARNING
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Superconducting devices [2023-02] |
H10N 60/00 |
H10N 60/01 | . | Manufacture or treatment [2023-02] |
H10N 60/0128 | . . | {of composite superconductor filaments (comprising copper oxide H10N 60/0268)} [2023-02] |
H10N 60/0156 | . . | {of devices comprising Nb or an alloy of Nb with one or more of the elements of group IVB, e.g. titanium, zirconium or hafnium} [2024-05] |
H10N 60/0184 | . . | {of devices comprising intermetallic compounds of type A-15, e.g. Nb3Sn} [2023-02] |
H10N 60/0212 | . . | {of devices comprising molybdenum chalcogenides} [2023-02] |
H10N 60/0241 | . . | {of devices comprising nitrides or carbonitrides} [2023-02] |
H10N 60/0268 | . . | {of devices comprising copper oxide} [2023-02] |
H10N 60/0296 | . . . | {Processes for depositing or forming copper oxide superconductor layers} [2024-05] |
H10N 60/0324 | . . . . | {from a solution} [2023-02] |
H10N 60/0352 | . . . . | {from a suspension or slurry, e.g. screen printing or doctor blade casting} [2024-05] |
H10N 60/0381 | . . . . | {by evaporation, e.g. MBE} [2024-05] |
H10N 60/0408 | . . . . | {by sputtering} [2023-02] |
H10N 60/0436 | . . . . | {by chemical vapour deposition [CVD]} [2023-02] |
H10N 60/0464 | . . . . . | {by metalloorganic chemical vapour deposition [MOCVD]} [2023-02] |
H10N 60/0492 | . . . . | {by thermal spraying, e.g. plasma deposition} [2023-02] |
H10N 60/0521 | . . . . | {by pulsed laser deposition, e.g. laser sputtering} [2024-05] |
H10N 60/0548 | . . . . | {by deposition and subsequent treatment, e.g. oxidation of pre-deposited material} [2024-05] |
H10N 60/0576 | . . . . | {characterised by the substrate} [2023-02] |
H10N 60/0604 | . . . . . | {Monocrystalline substrates, e.g. epitaxial growth} [2023-02] |
H10N 60/0632 | . . . . . | {Intermediate layers, e.g. for growth control} [2023-02] |
H10N 60/0661 | . . . | {Processes performed after copper oxide formation, e.g. patterning} [2024-05] |
H10N 60/0688 | . . . . | {Etching} [2023-02] |
H10N 60/0716 | . . . . | {Passivating} [2024-05] |
H10N 60/0744 | . . . | {Manufacture or deposition of electrodes} [2024-05] |
H10N 60/0772 | . . . | {Processes including the use of non-gaseous precursors} [2024-05] |
H10N 60/0801 | . . . | {Manufacture or treatment of filaments or composite wires} [2024-05] |
H10N 60/0828 | . . . | {Introducing flux pinning centres} [2023-02] |
H10N 60/0856 | . . | {of devices comprising metal borides, e.g. MgB2} [2023-02] |
H10N 60/0884 | . . | {Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam or X-rays} [2024-05] |
H10N 60/0912 | . . | {of Josephson-effect devices} [2023-02] |
H10N 60/0941 | . . . | {comprising high-Tc ceramic materials} [2023-02] |
H10N 60/10 | . | Junction-based devices [2023-02] |
H10N 60/11 | . . | {Single-electron tunnelling devices} [2024-05] |
H10N 60/12 | . . | Josephson-effect devices [2023-02] |
H10N 60/124 | . . . | {comprising high-Tc ceramic materials} [2023-02] |
H10N 60/126 | . . . | {comprising metal borides, e.g. MgB2} [2023-02] |
H10N 60/128 | . . | {having three or more electrodes, e.g. transistor-like structures} [2023-02] |
H10N 60/20 | . | Permanent superconducting devices [2023-02] |
H10N 60/202 | . . | {comprising metal borides, e.g. MgB2} [2023-02] |
H10N 60/203 | . . | {comprising high-Tc ceramic materials} [2023-02] |
H10N 60/205 | . . | {having three or more electrodes, e.g. transistor-like structures (H10N 60/128 takes precedence)} [2023-02] |
H10N 60/207 | . . . | {Field effect devices} [2023-02] |
H10N 60/208 | . . | {based on Abrikosov vortices} [2023-02] |
H10N 60/30 | . | Devices switchable between superconducting and normal states [2023-02] |
H10N 60/35 | . . | Cryotrons [2023-02] |
H10N 60/355 | . . . | Power cryotrons [2023-02] |
H10N 60/80 | . | Constructional details [2023-02] |
H10N 60/805 | . . | {for Josephson-effect devices} [2023-02] |
H10N 60/81 | . . | Containers; Mountings [2023-02] |
H10N 60/815 | . . . | {for Josephson-effect devices} [2023-02] |
H10N 60/82 | . . | Current path [2023-02] |
H10N 60/83 | . . | Element shape [2023-02] |
H10N 60/84 | . . | Switching means for devices switchable between superconducting and normal states [2023-02] |
H10N 60/85 | . . | Superconducting active materials [2023-02] |
H10N 60/851 | . . . | {Organic superconductors} [2024-05] |
H10N 60/853 | . . . . | {Fullerene superconductors, e.g. soccer ball-shaped allotropes of carbon, e.g. C60 or C94} [2024-05] |
H10N 60/855 | . . . | {Ceramic superconductors} [2024-05] |
H10N 60/857 | . . . . | {comprising copper oxide} [2023-02] |
H10N 60/858 | . . . . . | {having multilayered structures, e.g. superlattices} [2024-05] |
H10N 60/99 | . | {Alleged superconductivity} [2023-02] |
| H10N 69/00 | Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N 60/00 [2023-08] WARNING
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Other electric solid-state devices [2023-02] |
H10N 70/00 | Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N 79/00) [2024-01] |
H10N 70/011 | . | {Manufacture or treatment of multistable switching devices} [2023-02] |
H10N 70/021 | . . | {Formation of switching materials, e.g. deposition of layers} [2024-05] |
H10N 70/023 | . . . | {by chemical vapor deposition, e.g. MOCVD, ALD} [2023-02] |
H10N 70/026 | . . . | {by physical vapor deposition, e.g. sputtering} [2023-02] |
H10N 70/028 | . . . | {by conversion of electrode material, e.g. oxidation} [2023-02] |
H10N 70/041 | . . | {Modification of switching materials after formation, e.g. doping (shaping H10N 70/061)} [2024-05] |
H10N 70/043 | . . . | {by implantation} [2023-02] |
H10N 70/046 | . . . | {by diffusion, e.g. photo-dissolution} [2023-02] |
H10N 70/061 | . . | {Shaping switching materials} [2024-05] |
H10N 70/063 | . . . | {by etching of pre-deposited switching material layers, e.g. lithography} [2023-02] |
H10N 70/066 | . . . | {by filling of openings, e.g. damascene method} [2023-02] |
H10N 70/068 | . . . | {by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers} [2023-02] |
H10N 70/10 | . | Solid-state travelling-wave devices [2023-02] |
H10N 70/151 | . | {Charge density wave transport devices} [2023-02] |
H10N 70/20 | . | Multistable switching devices, e.g. memristors [2023-02] |
H10N 70/231 | . . | {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect} [2023-02] |
H10N 70/235 | . . . | {between different crystalline phases, e.g. cubic and hexagonal} [2023-02] |
H10N 70/24 | . . | {based on migration or redistribution of ionic species, e.g. anions, vacancies} [2023-02] |
H10N 70/245 | . . . | {the species being metal cations, e.g. programmable metallization cells} [2023-02] |
H10N 70/25 | . . | {based on bulk electronic defects, e.g. trapping of electrons} [2023-02] |
H10N 70/253 | . . | {having three or more electrodes, e.g. transistor-like devices} [2024-05] |
H10N 70/257 | . . | {having switching assisted by radiation or particle beam, e.g. optically controlled devices} [2024-05] |
H10N 70/801 | . | {Constructional details of multistable switching devices} [2023-02] |
H10N 70/821 | . . | {Device geometry} [2023-02] |
H10N 70/823 | . . . | {adapted for essentially horizontal current flow, e.g. bridge type devices} [2023-02] |
H10N 70/826 | . . . | {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices} [2023-02] |
H10N 70/8265 | . . . . | {on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices} [2024-05] |
H10N 70/828 | . . . | {Current flow limiting means within the switching material region, e.g. constrictions} [2023-02] |
H10N 70/841 | . . | {Electrodes} [2023-02] |
H10N 70/8413 | . . . | {adapted for resistive heating} [2023-02] |
H10N 70/8416 | . . . | {adapted for supplying ionic species} [2023-02] |
H10N 70/8418 | . . . | {adapted for focusing electric field or current, e.g. tip-shaped} [2023-02] |
H10N 70/861 | . . | {Thermal details} [2023-02] |
H10N 70/8613 | . . . | {Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel} [2023-02] |
H10N 70/8616 | . . . | {Thermal insulation means} [2023-02] |
H10N 70/881 | . . | {Switching materials} [2023-02] |
H10N 70/882 | . . . | {Compounds of sulfur, selenium or tellurium, e.g. chalcogenides} [2023-02] |
H10N 70/8822 | . . . . | {Sulfides, e.g. CuS} [2023-02] |
H10N 70/8825 | . . . . | {Selenides, e.g. GeSe} [2023-02] |
H10N 70/8828 | . . . . | {Tellurides, e.g. GeSbTe} [2023-02] |
H10N 70/883 | . . . | {Oxides or nitrides} [2023-02] |
H10N 70/8833 | . . . . | {Binary metal oxides, e.g. TaOx} [2023-02] |
H10N 70/8836 | . . . . | {Complex metal oxides, e.g. perovskites, spinels} [2023-02] |
H10N 70/884 | . . . | {based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors (compounds of sulfur, selenium or tellurium, e.g. chalcogenides H10N 70/882; oxides or nitrides H10N 70/883)} [2024-05] |
H10N 70/8845 | . . . . | {Carbon or carbides} [2023-02] |
| H10N 79/00 | Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N 70/00 (ReRAM devices H10B 63/00; PCRAM devices H10B 63/10) [2023-08] WARNING
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H10N 80/00 | Bulk negative-resistance effect devices (integrated devices or assemblies of multiple devices H10N 89/00) [2023-02] |
H10N 80/01 | . | {Manufacture or treatment} [2023-02] |
H10N 80/10 | . | Gunn-effect devices [2023-02] |
H10N 80/103 | . . | {controlled by electromagnetic radiation} [2023-02] |
H10N 80/107 | . . | {Gunn diodes} [2023-02] |
| H10N 89/00 | Integrated devices, or assemblies of multiple devices, comprising at least one bulk negative resistance effect element covered by group H10N 80/00 [2023-08] WARNING
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H10N 89/02 | . | {Gunn-effect integrated devices} [2024-05] |
H10N 97/00 | Electric solid-state thin-film or thick-film devices, not otherwise provided for [2023-02] |
H10N 99/00 | Subject matter not provided for in other groups of this subclass [2023-02] |
H10N 99/03 | . | {Devices using Mott metal-insulator transition, e.g. field-effect transistor-like devices} [2024-05] |
H10N 99/05 | . | {Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors} [2024-05] |