1. CPC Sections
  2. CPC Section C
  3. CPC Class C30
  4. CPC Subclass C30B
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Version: 2023.08
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CPC
COOPERATIVE PATENT CLASSIFICATION
​​
C30B
SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H01L, H10); APPARATUS THEREFOR [2023-02]
NOTES

  • In this subclass, the following expressions are used with the meaning indicated:
    • "single-crystal" includes also twin crystals and a predominantly single crystal product;
    • "homogeneous polycrystalline material" means a material with crystal particles, all of which have the same chemical composition;
    • "defined structure" means the structure of a material with grains which are oriented in a preferential way or have larger dimensions than normally obtained.
  • In this subclass:
    • the preparation of crystals or a homogeneous polycrystalline material with defined structure of particular materials or shapes is classified in the group for the process as well as in group C30B 29/00;
    • an apparatus specially adapted for a specific process is classified in the appropriate group for the process. Apparatus to be used in more than one kind of process is classified in group C30B 35/00.
WARNING

  • In this subclass non-limiting references (in the sense of paragraph 39 of the Guide to the IPC) may still be displayed in the scheme.
Single-crystal growth from solids or gels [2013-01]
C30B 1/00
Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) [2013-01]
C30B 1/02
.
by thermal treatment, e.g. strain annealing (C30B 1/12 takes precedence) [2013-01]
C30B 1/023
. .
{from solids with amorphous structure} [2013-01]
C30B 1/026
. .
{Solid phase epitaxial growth through a disordered intermediate layer} [2013-01]
C30B 1/04
. .
Isothermal recrystallisation [2013-01]
C30B 1/06
. .
Recrystallisation under a temperature gradient [2013-01]
C30B 1/08
. . .
Zone recrystallisation [2013-01]
C30B 1/10
.
by solid state reactions or multi-phase diffusion [2013-01]
C30B 1/12
.
by pressure treatment during the growth [2013-01]
C30B 3/00
Unidirectional demixing of eutectoid materials [2013-01]
C30B 5/00
Single-crystal growth from gels (under a protective fluid C30B 27/00) [2013-01]
C30B 5/02
.
with addition of doping materials [2017-08]
Single-crystal growth from liquids; Unidirectional solidification of eutectic materials [2013-01]
C30B 7/00
Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) [2013-01]
C30B 7/005
.
{Epitaxial layer growth} [2020-05]
C30B 7/02
.
by evaporation of the solvent [2013-01]
C30B 7/04
. .
using aqueous solvents [2013-01]
C30B 7/06
. .
using non-aqueous solvents [2013-01]
C30B 7/08
.
by cooling of the solution [2013-01]
C30B 7/10
.
by application of pressure, e.g. hydrothermal processes [2013-01]
C30B 7/105
. .
{using ammonia as solvent, i.e. ammonothermal processes} [2013-01]
C30B 7/12
.
by electrolysis [2013-01]
C30B 7/14
.
the crystallising materials being formed by chemical reactions in the solution [2017-08]
C30B 9/00
Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00) [2013-01]
C30B 9/02
.
by evaporation of the molten solvent [2013-01]
C30B 9/04
.
by cooling of the solution [2013-01]
C30B 9/06
. .
using as solvent a component of the crystal composition [2013-01]
C30B 9/08
. .
using other solvents [2013-01]
C30B 9/10
. . .
Metal solvents [2013-01]
C30B 9/12
. . .
Salt solvents, e.g. flux growth [2013-01]
C30B 9/14
.
by electrolysis [2013-01]
C30B 11/00
Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method (C30B 13/00, C30B 15/00, C30B 17/00, C30B 19/00 take precedence; under a protective fluid C30B 27/00) [2013-01]
C30B 11/001
.
{Continuous growth} [2013-01]
C30B 11/002
.
{Crucibles or containers for supporting the melt} [2013-01]
C30B 11/003
.
{Heating or cooling of the melt or the crystallised material} [2013-01]
C30B 11/005
.
{by irradiation or electric discharge} [2013-01]
C30B 11/006
.
{Controlling or regulating} [2013-01]
C30B 11/007
.
{Mechanisms for moving either the charge or the heater} [2013-01]
C30B 11/008
.
{using centrifugal force to the charge} [2013-01]
C30B 11/02
.
without using solvents (C30B 11/06 takes precedence) [2013-01]
C30B 11/04
.
adding crystallising materials or reactants forming it in situ to the melt [2017-08]
C30B 11/06
. .
at least one but not all components of the crystal composition being added [2013-01]
C30B 11/065
. . .
{before crystallising, e.g. synthesis} [2013-01]
C30B 11/08
. .
every component of the crystal composition being added during the crystallisation [2013-01]
C30B 11/10
. . .
Solid or liquid components, e.g. Verneuil method [2013-01]
C30B 11/12
. . .
Vaporous components, e.g. vapour-liquid-solid-growth [2013-01]
C30B 11/14
.
characterised by the seed, e.g. its crystallographic orientation [2013-01]
C30B 13/00
Single-crystal growth by zone-melting; Refining by zone-melting (C30B 17/00 takes precedence; by changing the cross-section of the treated solid C30B 15/00; under a protective fluid C30B 27/00; zone-refining of specific materials, see the relevant subclasses for the materials) [2013-01]
C30B 13/005
.
{Continuous growth} [2013-01]
C30B 13/02
.
Zone-melting with a solvent, e.g. travelling solvent process [2013-01]
C30B 13/04
.
Homogenisation by zone-levelling [2013-01]
C30B 13/06
.
the molten zone not extending over the whole cross-section [2013-01]
C30B 13/08
.
adding crystallising materials or reactants forming it in situ to the molten zone [2017-08]
C30B 13/10
. .
with addition of doping materials [2017-08]
C30B 13/12
. . .
in the gaseous or vapour state [2013-01]
C30B 13/14
.
Crucibles or vessels [2013-01]
C30B 13/16
.
Heating of the molten zone [2013-01]
C30B 13/18
. .
the heating element being in contact with, or immersed in, the molten zone [2013-01]
C30B 13/20
. .
by induction, e.g. hot wire technique (C30B 13/18 takes precedence) [2022-01]
C30B 13/22
. .
by irradiation or electric discharge [2013-01]
C30B 13/24
. . .
using electromagnetic waves [2013-01]
C30B 13/26
.
Stirring of the molten zone [2013-01]
C30B 13/28
.
Controlling or regulating [2022-01]
C30B 13/285
. .
{Crystal holders, e.g. chucks} [2013-01]
C30B 13/30
. .
Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal [2013-01]
C30B 13/32
.
Mechanisms for moving either the charge or the heater [2013-01]
C30B 13/34
.
characterised by the seed, e.g. by its crystallographic orientation [2013-01]
C30B 15/00
Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B 27/00) [2013-01]
C30B 15/002
.
{Continuous growth} [2013-01]
C30B 15/005
.
{Simultaneous pulling of more than one crystal} [2013-01]
C30B 15/007
.
{Pulling on a substrate} [2013-01]
C30B 15/02
.
adding crystallising materials or reactants forming it in situ to the melt [2017-08]
C30B 15/04
. .
adding doping materials, e.g. for n-p-junction [2017-08]
C30B 15/06
.
Non-vertical pulling [2013-01]
C30B 15/08
.
Downward pulling [2013-01]
C30B 15/10
.
Crucibles or containers for supporting the melt [2013-01]
C30B 15/12
. .
Double crucible methods [2013-01]
C30B 15/14
.
Heating of the melt or the crystallised materials [2017-08]
C30B 15/16
. .
by irradiation or electric discharge [2013-01]
C30B 15/18
. .
using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat [2013-01]
C30B 15/20
.
Controlling or regulating (controlling or regulating in general G05) [2013-01]
C30B 15/203
. .
{the relationship of pull rate (v) to axial thermal gradient (G)} [2013-01]
C30B 15/206
. .
{the thermal history of growing the ingot} [2013-01]
C30B 15/22
. .
Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal [2013-01]
C30B 15/24
. . .
using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B 15/34) [2013-01]
C30B 15/26
. . .
using television detectors; using photo or X-ray detectors [2013-01]
C30B 15/28
. . .
using weight changes of the crystal or the melt, e.g. flotation methods [2013-01]
C30B 15/30
.
Mechanisms for rotating or moving either the melt or the crystal (flotation methods C30B 15/28) [2013-01]
C30B 15/305
. .
{Stirring of the melt} [2013-01]
C30B 15/32
.
Seed holders, e.g. chucks [2013-01]
C30B 15/34
.
Edge-defined film-fed crystal-growth using dies or slits [2013-01]
C30B 15/36
.
characterised by the seed, e.g. its crystallographic orientation [2013-01]
C30B 17/00
Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B 15/00 takes precedence) [2013-01]
C30B 19/00
Liquid-phase epitaxial-layer growth [2013-01]
C30B 19/02
.
using molten solvents, e.g. flux [2013-01]
C30B 19/04
. .
the solvent being a component of the crystal composition [2013-01]
C30B 19/06
.
Reaction chambers; Boats for supporting the melt; Substrate holders [2013-01]
C30B 19/061
. .
{Tipping system, e.g. by rotation} [2013-01]
C30B 19/062
. .
{Vertical dipping system} [2013-01]
C30B 19/063
. .
{Sliding boat system} [2013-01]
C30B 19/064
. .
{Rotating sliding boat system} [2013-01]
C30B 19/065
. .
{Multiple stacked slider system} [2013-01]
C30B 19/066
. .
{Injection or centrifugal force system} [2013-01]
C30B 19/067
. .
{Boots or containers} [2013-01]
C30B 19/068
. .
{Substrate holders} [2013-01]
C30B 19/08
.
Heating of the reaction chamber or the substrate [2013-01]
C30B 19/10
.
Controlling or regulating (controlling or regulating in general G05) [2013-01]
C30B 19/103
. .
{Current controlled or induced growth} [2013-01]
C30B 19/106
. .
{adding crystallising material or reactants forming it in situ to the liquid} [2013-01]
C30B 19/12
.
characterised by the substrate [2013-01]
C30B 21/00
Unidirectional solidification of eutectic materials [2013-01]
C30B 21/02
.
by normal casting or gradient freezing [2013-01]
C30B 21/04
.
by zone-melting [2013-01]
C30B 21/06
.
by pulling from a melt [2013-01]
Single-crystal growth from vapours [2013-01]
​
C30B 23/00
Single-crystal growth by condensing evaporated or sublimed materials [2020-05]
NOTE

C30B 23/002
.
{Controlling or regulating} [2013-01]
C30B 23/005
. .
{Controlling or regulating flux or flow of depositing species or vapour} [2013-01]
C30B 23/007
.
{Growth of whiskers or needles} [2013-01]
C30B 23/02
.
Epitaxial-layer growth [2013-01]
C30B 23/025
. .
{characterised by the substrate} [2013-01]
C30B 23/04
. .
Pattern deposit, e.g. by using masks [2013-01]
C30B 23/06
. .
Heating of the deposition chamber, the substrate or the materials to be evaporated [2017-08]
C30B 23/063
. . .
{Heating of the substrate} [2020-05]
C30B 23/066
. . .
{Heating of the material to be evaporated} [2020-05]
C30B 23/08
. .
by condensing ionised vapours (by reactive sputtering C30B 25/06) [2013-01]
C30B 25/00
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth [2013-01]
C30B 25/005
.
{Growth of whiskers or needles} [2013-01]
C30B 25/02
.
Epitaxial-layer growth [2013-01]
C30B 25/025
. .
{Continuous growth} [2013-01]
C30B 25/04
. .
Pattern deposit, e.g. by using masks [2013-01]
C30B 25/06
. .
by reactive sputtering [2013-01]
C30B 25/08
. .
Reaction chambers; Selection of materials therefor [2017-08]
C30B 25/10
. .
Heating of the reaction chamber or the substrate [2013-01]
C30B 25/105
. . .
{by irradiation or electric discharge} [2013-01]
C30B 25/12
. .
Substrate holders or susceptors [2013-01]
C30B 25/14
. .
Feed and outlet means for the gases; Modifying the flow of the reactive gases [2013-01]
C30B 25/16
. .
Controlling or regulating (controlling or regulating in general G05) [2013-01]
C30B 25/165
. . .
{the flow of the reactive gases} [2020-05]
C30B 25/18
. .
characterised by the substrate [2013-01]
C30B 25/183
. . .
{being provided with a buffer layer, e.g. a lattice matching layer} [2020-05]
C30B 25/186
. . .
{being specially pre-treated by, e.g. chemical or physical means} [2016-08]
C30B 25/20
. . .
the substrate being of the same materials as the epitaxial layer [2017-08]
C30B 25/205
. . . .
{the substrate being of insulating material} [2013-01]
C30B 25/22
. .
Sandwich processes [2013-01]
C30B 27/00
Single-crystal growth under a protective fluid [2013-01]
C30B 27/02
.
by pulling from a melt [2013-01]
C30B 28/00
Production of homogeneous polycrystalline material with defined structure [2013-01]
C30B 28/02
.
directly from the solid state [2013-01]
C30B 28/04
.
from liquids [2013-01]
C30B 28/06
. .
by normal freezing or freezing under temperature gradient [2013-01]
C30B 28/08
. .
by zone-melting [2013-01]
C30B 28/10
. .
by pulling from a melt [2013-01]
C30B 28/12
.
directly from the gas state [2013-01]
C30B 28/14
. .
by chemical reaction of reactive gases [2013-01]
​
C30B 29/00
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape [2022-01]
NOTE

  • In groups C30B 29/02 - C30B 29/58, in the absence of an indication to the contrary, a material is classified in the last appropriate place.
C30B 29/02
.
Elements [2013-01]
C30B 29/04
. .
Diamond [2013-01]
C30B 29/06
. .
Silicon [2013-01]
C30B 29/08
. .
Germanium [2013-01]
C30B 29/10
.
Inorganic compounds or compositions [2013-01]
C30B 29/12
. .
Halides [2013-01]
C30B 29/14
. .
Phosphates [2013-01]
C30B 29/16
. .
Oxides [2013-01]
C30B 29/18
. . .
Quartz [2013-01]
C30B 29/20
. . .
Aluminium oxides [2013-01]
C30B 29/22
. . .
Complex oxides [2013-01]
C30B 29/225
. . . .
{based on rare earth copper oxides, e.g. high T-superconductors} [2013-01]
C30B 29/24
. . . .
with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. ortho ferrites [2013-01]
C30B 29/26
. . . .
with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al [2013-01]
C30B 29/28
. . . .
with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets [2013-01]
C30B 29/30
. . . .
Niobates; Vanadates; Tantalates [2013-01]
C30B 29/32
. . . .
Titanates; Germanates; Molybdates; Tungstates [2013-01]
C30B 29/34
. .
Silicates [2013-01]
C30B 29/36
. .
Carbides [2013-01]
C30B 29/38
. .
Nitrides [2013-01]
C30B 29/40
. .
AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi} [2013-01]
C30B 29/403
. . .
{AIII-nitrides} [2015-10]
C30B 29/406
. . . .
{Gallium nitride} [2015-10]
C30B 29/42
. . .
Gallium arsenide [2013-01]
C30B 29/44
. . .
Gallium phosphide [2013-01]
C30B 29/46
. .
Sulfur-, selenium- or tellurium-containing compounds [2013-01]
C30B 29/48
. . .
AIIBVI compounds {wherein A is Zn, Cd or Hg, and B is S, Se or Te} [2013-01]
C30B 29/50
. . . .
Cadmium sulfide [2013-01]
C30B 29/52
. .
Alloys [2013-01]
C30B 29/54
.
Organic compounds [2013-01]
C30B 29/56
. .
Tartrates [2013-01]
C30B 29/58
. .
Macromolecular compounds [2013-01]
C30B 29/60
.
characterised by shape [2013-01]
C30B 29/602
. .
{Nanotubes} [2013-01]
C30B 29/605
. .
{Products containing multiple oriented crystallites, e.g. columnar crystallites} [2013-01]
C30B 29/62
. .
Whiskers or needles [2013-01]
C30B 29/64
. .
Flat crystals, e.g. plates, strips or discs [2020-05]
C30B 29/66
. .
Crystals of complex geometrical shape, e.g. tubes, cylinders [2020-05]
C30B 29/68
. .
Crystals with laminate structure, e.g. "superlattices" [2013-01]
​
C30B 30/00
Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions [2016-05]
NOTE

  • When classifying in this group, classification is also made in groups C30B 1/00 - C30B 27/00 according to the process of crystal growth.
C30B 30/02
.
using electric fields, e.g. electrolysis [2013-01]
C30B 30/04
.
using magnetic fields [2013-01]
C30B 30/06
.
using mechanical vibrations [2013-01]
C30B 30/08
.
in conditions of zero-gravity or low gravity [2013-01]
After-treatment of single crystals or homogeneous polycrystalline material with defined structure [2013-01]
C30B 31/00
Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor [2013-01]
C30B 31/02
.
by contacting with diffusion materials in the solid state [2017-08]
C30B 31/04
.
by contacting with diffusion materials in the liquid state [2017-08]
C30B 31/045
. .
{by electrolysis} [2013-01]
C30B 31/06
.
by contacting with diffusion material in the gaseous state [2020-01]
C30B 31/08
. .
the diffusion materials being a compound of the elements to be diffused [2017-08]
C30B 31/10
. .
Reaction chambers; Selection of materials therefor [2017-08]
C30B 31/103
. . .
{Mechanisms for moving either the charge or heater} [2013-01]
C30B 31/106
. . .
{Continuous processes} [2013-01]
C30B 31/12
. .
Heating of the reaction chamber [2013-01]
C30B 31/14
. .
Substrate holders or susceptors [2013-01]
C30B 31/16
. .
Feed and outlet means for the gases; Modifying the flow of the gases [2013-01]
C30B 31/165
. . .
{Diffusion sources} [2013-01]
C30B 31/18
. .
Controlling or regulating [2022-01]
C30B 31/185
. . .
{Pattern diffusion, e.g. by using masks} [2013-01]
C30B 31/20
.
Doping by irradiation with electromagnetic waves or by particle radiation [2013-01]
C30B 31/22
. .
by ion-implantation [2013-01]
C30B 33/00
After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B 31/00 takes precedence) [2022-01]
C30B 33/005
.
{Oxydation} [2013-01]
C30B 33/02
.
Heat treatment (C30B 33/04, C30B 33/06 take precedence) [2013-01]
C30B 33/04
.
using electric or magnetic fields or particle radiation [2013-01]
C30B 33/06
.
Joining of crystals [2013-01]
C30B 33/08
.
Etching [2013-01]
C30B 33/10
. .
in solutions or melts [2013-01]
C30B 33/12
. .
in gas atmosphere or plasma [2013-01]
C30B 35/00
Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure [2022-08]
C30B 35/002
.
{Crucibles or containers} [2013-01]
C30B 35/005
.
{Transport systems} [2013-01]
C30B 35/007
.
{Apparatus for preparing, pre-treating the source material to be used for crystal growth} [2020-05]