Version: 2025.01
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CPC | COOPERATIVE PATENT CLASSIFICATION | |||
| C30B | SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J 3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H01L, H10); APPARATUS THEREFOR [2023-02] NOTES
WARNING
|
Single-crystal growth from solids or gels [2013-01] |
C30B 1/00 | Single-crystal growth directly from the solid state (unidirectional demixing of eutectoid materials C30B 3/00; under a protective fluid C30B 27/00) [2013-01] |
C30B 1/02 | . |
C30B 1/023 | . . | {from solids with amorphous structure} [2013-01] |
C30B 1/026 | . . | {Solid phase epitaxial growth through a disordered intermediate layer} [2013-01] |
C30B 1/04 | . . | Isothermal recrystallisation [2013-01] |
C30B 1/06 | . . | Recrystallisation under a temperature gradient [2013-01] |
C30B 1/08 | . . . | Zone recrystallisation [2013-01] |
C30B 1/10 | . | by solid state reactions or multi-phase diffusion [2013-01] |
C30B 1/12 | . | by pressure treatment during the growth [2013-01] |
C30B 3/00 | Unidirectional demixing of eutectoid materials [2013-01] |
C30B 5/00 |
C30B 5/02 | . | with addition of doping materials [2017-08] |
Single-crystal growth from liquids; Unidirectional solidification of eutectic materials [2013-01] |
C30B 7/00 | Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (from molten solvents C30B 9/00; by normal or gradient freezing C30B 11/00; under a protective fluid C30B 27/00) [2013-01] |
C30B 7/005 | . | {Epitaxial layer growth} [2020-05] |
C30B 7/02 | . | by evaporation of the solvent [2013-01] |
C30B 7/04 | . . | using aqueous solvents [2013-01] |
C30B 7/06 | . . | using non-aqueous solvents [2013-01] |
C30B 7/08 | . | by cooling of the solution [2013-01] |
C30B 7/10 | . | by application of pressure, e.g. hydrothermal processes [2013-01] |
C30B 7/105 | . . | {using ammonia as solvent, i.e. ammonothermal processes} [2013-01] |
C30B 7/12 | . | by electrolysis [2013-01] |
C30B 7/14 | . | the crystallising materials being formed by chemical reactions in the solution [2017-08] |
C30B 9/00 | Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B 11/00; by zone-melting C30B 13/00; by crystal pulling C30B 15/00; on immersed seed crystal C30B 17/00; by liquid phase epitaxial growth C30B 19/00; under a protective fluid C30B 27/00) [2013-01] |
C30B 9/02 | . | by evaporation of the molten solvent [2013-01] |
C30B 9/04 | . | by cooling of the solution [2013-01] |
C30B 9/06 | . . | using as solvent a component of the crystal composition [2013-01] |
C30B 9/08 | . . | using other solvents [2013-01] |
C30B 9/10 | . . . | Metal solvents [2013-01] |
C30B 9/12 | . . . | Salt solvents, e.g. flux growth [2013-01] |
C30B 9/14 | . | by electrolysis [2013-01] |
C30B 11/00 | Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method (C30B 13/00, C30B 15/00, C30B 17/00, C30B 19/00 take precedence; under a protective fluid C30B 27/00) [2013-01] |
C30B 11/001 | . | {Continuous growth} [2013-01] |
C30B 11/002 | . | {Crucibles or containers for supporting the melt} [2013-01] |
C30B 11/003 | . | {Heating or cooling of the melt or the crystallised material} [2013-01] |
C30B 11/005 | . | {by irradiation or electric discharge} [2013-01] |
C30B 11/006 | . | {Controlling or regulating} [2013-01] |
C30B 11/007 | . | {Mechanisms for moving either the charge or the heater} [2013-01] |
C30B 11/008 | . | {using centrifugal force to the charge} [2013-01] |
C30B 11/02 | . |
C30B 11/04 | . | adding crystallising materials or reactants forming it in situ to the melt [2017-08] |
C30B 11/06 | . . | at least one but not all components of the crystal composition being added [2013-01] |
C30B 11/065 | . . . | {before crystallising, e.g. synthesis} [2013-01] |
C30B 11/08 | . . | every component of the crystal composition being added during the crystallisation [2013-01] |
C30B 11/10 | . . . | Solid or liquid components, e.g. Verneuil method [2013-01] |
C30B 11/12 | . . . | Vaporous components, e.g. vapour-liquid-solid-growth [2013-01] |
C30B 11/14 | . | characterised by the seed, e.g. its crystallographic orientation [2013-01] |
C30B 13/00 | Single-crystal growth by zone-melting; Refining by zone-melting (C30B 17/00 takes precedence; by changing the cross-section of the treated solid C30B 15/00; under a protective fluid C30B 27/00; for the growth of homogeneous polycrystalline material with defined structure C30B 28/00) [2024-01] |
C30B 13/005 | . | {Continuous growth} [2013-01] |
C30B 13/02 | . | Zone-melting with a solvent, e.g. travelling solvent process [2013-01] |
C30B 13/04 | . | Homogenisation by zone-levelling [2013-01] |
C30B 13/06 | . | the molten zone not extending over the whole cross-section [2013-01] |
C30B 13/08 | . | adding crystallising materials or reactants forming it in situ to the molten zone [2017-08] |
C30B 13/10 | . . | with addition of doping materials [2017-08] |
C30B 13/12 | . . . | in the gaseous or vapour state [2013-01] |
C30B 13/14 | . | Crucibles or vessels [2013-01] |
C30B 13/16 | . | Heating of the molten zone [2013-01] |
C30B 13/18 | . . | the heating element being in contact with, or immersed in, the molten zone [2013-01] |
C30B 13/20 | . . |
C30B 13/22 | . . | by irradiation or electric discharge [2013-01] |
C30B 13/24 | . . . | using electromagnetic waves [2013-01] |
C30B 13/26 | . | Stirring of the molten zone [2013-01] |
C30B 13/28 | . | Controlling or regulating [2022-01] |
C30B 13/285 | . . | {Crystal holders, e.g. chucks} [2013-01] |
C30B 13/30 | . . | Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal [2013-01] |
C30B 13/32 | . | Mechanisms for moving either the charge or the heater [2013-01] |
C30B 13/34 | . | characterised by the seed, e.g. by its crystallographic orientation [2013-01] |
C30B 15/00 | Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B 27/00) [2013-01] |
C30B 15/002 | . | {Continuous growth} [2013-01] |
C30B 15/005 | . | {Simultaneous pulling of more than one crystal} [2013-01] |
C30B 15/007 | . | {Pulling on a substrate} [2013-01] |
C30B 15/02 | . | adding crystallising materials or reactants forming it in situ to the melt [2017-08] |
C30B 15/04 | . . | adding doping materials, e.g. for n-p-junction [2017-08] |
C30B 15/06 | . | Non-vertical pulling [2013-01] |
C30B 15/08 | . | Downward pulling [2013-01] |
C30B 15/10 | . | Crucibles or containers for supporting the melt [2013-01] |
C30B 15/12 | . . | Double crucible methods [2013-01] |
C30B 15/14 | . | Heating of the melt or the crystallised materials [2017-08] |
C30B 15/16 | . . | by irradiation or electric discharge [2013-01] |
C30B 15/18 | . . | using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat [2013-01] |
C30B 15/20 | . |
C30B 15/203 | . . | {the relationship of pull rate (v) to axial thermal gradient (G)} [2013-01] |
C30B 15/206 | . . | {the thermal history of growing the ingot} [2013-01] |
C30B 15/22 | . . | Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal [2013-01] |
C30B 15/24 | . . . | using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B 15/34) [2013-01] |
C30B 15/26 | . . . | using television detectors; using photo or X-ray detectors [2013-01] |
C30B 15/28 | . . . | using weight changes of the crystal or the melt, e.g. flotation methods [2013-01] |
C30B 15/30 | . | Mechanisms for rotating or moving either the melt or the crystal (flotation methods C30B 15/28) [2013-01] |
C30B 15/305 | . . | {Stirring of the melt} [2013-01] |
C30B 15/32 | . | Seed holders, e.g. chucks [2013-01] |
C30B 15/34 | . | Edge-defined film-fed crystal-growth using dies or slits [2013-01] |
C30B 15/36 | . | characterised by the seed, e.g. its crystallographic orientation [2013-01] |
C30B 17/00 | Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method (C30B 15/00 takes precedence) [2013-01] |
C30B 19/00 | Liquid-phase epitaxial-layer growth [2013-01] |
C30B 19/02 | . | using molten solvents, e.g. flux [2013-01] |
C30B 19/04 | . . | the solvent being a component of the crystal composition [2013-01] |
C30B 19/06 | . | Reaction chambers; Boats for supporting the melt; Substrate holders [2013-01] |
C30B 19/061 | . . | {Tipping system, e.g. by rotation} [2013-01] |
C30B 19/062 | . . | {Vertical dipping system} [2013-01] |
C30B 19/063 | . . | {Sliding boat system} [2013-01] |
C30B 19/064 | . . | {Rotating sliding boat system} [2013-01] |
C30B 19/065 | . . | {Multiple stacked slider system} [2013-01] |
C30B 19/066 | . . | {Injection or centrifugal force system} [2013-01] |
C30B 19/067 | . . | {Boots or containers} [2013-01] |
C30B 19/068 | . . | {Substrate holders} [2013-01] |
C30B 19/08 | . | Heating of the reaction chamber or the substrate [2013-01] |
C30B 19/10 | . |
C30B 19/103 | . . | {Current controlled or induced growth} [2013-01] |
C30B 19/106 | . . | {adding crystallising material or reactants forming it in situ to the liquid} [2013-01] |
C30B 19/12 | . | characterised by the substrate [2013-01] |
C30B 21/00 | Unidirectional solidification of eutectic materials [2013-01] |
C30B 21/02 | . | by normal casting or gradient freezing [2013-01] |
C30B 21/04 | . | by zone-melting [2013-01] |
C30B 21/06 | . | by pulling from a melt [2013-01] |
Single-crystal growth from vapours [2013-01] |
| C30B 23/00 | Single-crystal growth by condensing evaporated or sublimed materials [2020-05] NOTE
|
C30B 23/002 | . | {Controlling or regulating} [2013-01] |
C30B 23/005 | . . | {Controlling or regulating flux or flow of depositing species or vapour} [2013-01] |
C30B 23/007 | . | {Growth of whiskers or needles} [2013-01] |
C30B 23/02 | . | Epitaxial-layer growth [2013-01] |
C30B 23/025 | . . | {characterised by the substrate} [2013-01] |
C30B 23/04 | . . | Pattern deposit, e.g. by using masks [2013-01] |
C30B 23/06 | . . | Heating of the deposition chamber, the substrate or the materials to be evaporated [2017-08] |
C30B 23/063 | . . . | {Heating of the substrate} [2020-05] |
C30B 23/066 | . . . | {Heating of the material to be evaporated} [2020-05] |
C30B 23/08 | . . |
C30B 25/00 | Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth [2013-01] |
C30B 25/005 | . | {Growth of whiskers or needles} [2013-01] |
C30B 25/02 | . | Epitaxial-layer growth [2013-01] |
C30B 25/025 | . . | {Continuous growth} [2013-01] |
C30B 25/04 | . . | Pattern deposit, e.g. by using masks [2013-01] |
C30B 25/06 | . . | by reactive sputtering [2013-01] |
C30B 25/08 | . . | Reaction chambers; Selection of materials therefor [2017-08] |
C30B 25/10 | . . | Heating of the reaction chamber or the substrate [2013-01] |
C30B 25/12 | . . | Substrate holders or susceptors [2013-01] |
C30B 25/14 | . . | Feed and outlet means for the gases; Modifying the flow of the reactive gases [2013-01] |
C30B 25/16 | . . |
C30B 25/165 | . . . | {the flow of the reactive gases} [2020-05] |
C30B 25/18 | . . | characterised by the substrate [2013-01] |
C30B 25/183 | . . . | {being provided with a buffer layer, e.g. a lattice matching layer} [2020-05] |
C30B 25/186 | . . . | {being specially pre-treated by, e.g. chemical or physical means} [2016-08] |
C30B 25/20 | . . . | the substrate being of the same materials as the epitaxial layer [2017-08] |
C30B 25/205 | . . . . | {the substrate being of insulating material} [2013-01] |
C30B 25/22 | . . | Sandwich processes [2013-01] |
C30B 27/00 | Single-crystal growth under a protective fluid [2013-01] |
C30B 27/02 | . | by pulling from a melt [2013-01] |
C30B 28/00 | Production of homogeneous polycrystalline material with defined structure [2013-01] |
C30B 28/02 | . | directly from the solid state [2013-01] |
C30B 28/04 | . | from liquids [2013-01] |
C30B 28/06 | . . | by normal freezing or freezing under temperature gradient [2013-01] |
C30B 28/08 | . . | by zone-melting [2013-01] |
C30B 28/10 | . . | by pulling from a melt [2013-01] |
C30B 28/12 | . | directly from the gas state [2013-01] |
C30B 28/14 | . . | by chemical reaction of reactive gases [2013-01] |
| C30B 29/00 | Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape [2024-01] NOTES
|
C30B 29/02 | . | Elements [2013-01] |
C30B 29/04 | . . | Diamond [2013-01] |
C30B 29/06 | . . | Silicon [2013-01] |
C30B 29/08 | . . | Germanium [2013-01] |
C30B 29/10 | . | Inorganic compounds or compositions [2013-01] |
C30B 29/12 | . . | Halides [2013-01] |
C30B 29/14 | . . | Phosphates [2013-01] |
C30B 29/16 | . . | Oxides [2013-01] |
C30B 29/18 | . . . | Quartz [2013-01] |
C30B 29/20 | . . . | Aluminium oxides [2013-01] |
C30B 29/22 | . . . | Complex oxides [2013-01] |
C30B 29/225 | . . . . | {based on rare earth copper oxides, e.g. high T-superconductors} [2013-01] |
C30B 29/24 | . . . . | with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. ortho ferrites [2013-01] |
C30B 29/26 | . . . . | with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al [2013-01] |
C30B 29/28 | . . . . | with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets [2013-01] |
C30B 29/30 | . . . . | Niobates; Vanadates; Tantalates [2013-01] |
C30B 29/32 | . . . . | Titanates; Germanates; Molybdates; Tungstates [2013-01] |
C30B 29/34 | . . | Silicates [2013-01] |
C30B 29/36 | . . | Carbides [2013-01] |
C30B 29/38 | . . | Nitrides [2013-01] |
C30B 29/40 | . . | AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi} [2013-01] |
C30B 29/403 | . . . | {AIII-nitrides} [2015-10] |
C30B 29/406 | . . . . | {Gallium nitride} [2015-10] |
C30B 29/42 | . . . | Gallium arsenide [2013-01] |
C30B 29/44 | . . . | Gallium phosphide [2013-01] |
C30B 29/46 | . . | Sulfur-, selenium- or tellurium-containing compounds [2013-01] |
C30B 29/48 | . . . | AIIBVI compounds {wherein A is Zn, Cd or Hg, and B is S, Se or Te} [2013-01] |
C30B 29/50 | . . . . | Cadmium sulfide [2013-01] |
C30B 29/52 | . . | Alloys [2013-01] |
C30B 29/54 | . | Organic compounds [2013-01] |
C30B 29/60 | . | characterised by shape [2013-01] |
C30B 29/602 | . . | {Nanotubes} [2013-01] |
C30B 29/605 | . . | {Products containing multiple oriented crystallites, e.g. columnar crystallites} [2013-01] |
C30B 29/62 | . . | Whiskers or needles [2013-01] |
C30B 29/64 | . . | Flat crystals, e.g. plates, strips or discs [2020-05] |
C30B 29/66 | . . | Crystals of complex geometrical shape, e.g. tubes, cylinders [2020-05] |
C30B 29/68 | . . | Crystals with laminate structure, e.g. "superlattices" [2013-01] |
| C30B 30/00 | Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions [2016-05] NOTE
|
C30B 30/02 | . | using electric fields, e.g. electrolysis [2013-01] |
C30B 30/04 | . | using magnetic fields [2013-01] |
C30B 30/06 | . | using mechanical vibrations [2013-01] |
C30B 30/08 | . | in conditions of zero-gravity or low gravity [2013-01] |
After-treatment of single crystals or homogeneous polycrystalline material with defined structure [2013-01] |
C30B 31/00 | Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor [2013-01] |
C30B 31/02 | . | by contacting with diffusion materials in the solid state [2017-08] |
C30B 31/04 | . | by contacting with diffusion materials in the liquid state [2017-08] |
C30B 31/045 | . . | {by electrolysis} [2013-01] |
C30B 31/06 | . | by contacting with diffusion material in the gaseous state [2020-01] |
C30B 31/08 | . . | the diffusion materials being a compound of the elements to be diffused [2017-08] |
C30B 31/10 | . . | Reaction chambers; Selection of materials therefor [2017-08] |
C30B 31/103 | . . . | {Mechanisms for moving either the charge or heater} [2013-01] |
C30B 31/106 | . . . | {Continuous processes} [2013-01] |
C30B 31/12 | . . | Heating of the reaction chamber [2013-01] |
C30B 31/14 | . . | Substrate holders or susceptors [2013-01] |
C30B 31/16 | . . | Feed and outlet means for the gases; Modifying the flow of the gases [2013-01] |
C30B 31/165 | . . . | {Diffusion sources} [2013-01] |
C30B 31/18 | . . | Controlling or regulating [2022-01] |
C30B 31/185 | . . . | {Pattern diffusion, e.g. by using masks} [2013-01] |
C30B 31/20 | . | Doping by irradiation with electromagnetic waves or by particle radiation [2013-01] |
C30B 31/22 | . . | by ion-implantation [2013-01] |
C30B 33/00 | After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B 31/00 takes precedence) [2022-01] |
C30B 33/005 | . | {Oxydation} [2013-01] |
C30B 33/02 | . |
C30B 33/04 | . | using electric or magnetic fields or particle radiation [2013-01] |
C30B 33/06 | . | Joining of crystals [2013-01] |
C30B 33/08 | . | Etching [2013-01] |
C30B 33/10 | . . | in solutions or melts [2013-01] |
C30B 33/12 | . . | in gas atmosphere or plasma [2013-01] |
C30B 35/00 | Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure [2022-08] |