Skip over navigation
Main CPC Sections USPC Class Numbers & Titles USPC Class Numbers Classification Search Page Contacts Help
Outline
Indent Level
Color Curly Brackets (indicating CPC extensions to IPC)
Printable version [PDF]
CPC
COOPERATIVE PATENT CLASSIFICATION
Collapse
H01L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR (use of semiconductor devices for measuring G01; resistors in general H01C; magnets, inductors
{
in general
}
, transformers H01F; capacitors in general H01G; electrolytic devices H01G 9/00; batteries, accumulators H01M; waveguides, resonators or lines of the waveguide type H01P; line connectors, current collectors H01R; stimulated emission devices H01S; electromechanical resonators H03H; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers H04R; electric light sources in general H05B; printed circuits, hybrid circuits, casings or constructional details of electric apparatus, manufacture of assemblages of electrical components H05K; use of semiconductor devices in circuits having a particular application, see the subclass for the application)
NOTE
-
This subclass covers electric solid state devices which are not provided for in any other subclass and details thereof. This includes:
- semiconductor devices adapted for rectifying, amplifying, oscillating or switching;
- semiconductor devices sensitive to radiation;
- electric solid state devices using thermoelectric,
superconductive, piezo-electric, electrostrictive,
magnetostrictive, galvano-magnetic or bulk negative
resistance effects and integrated circuit devices.
Also covered by this subclass are photo-resistors, magnetic field dependent resistors, field effect resistors, capacitors with potential-jump barrier, resistors with potential-jump barrier or surface barrier, incoherent light emitting diodes, electromechanical solid state transducers and thin-film or thick-film circuits. Furthermore, it provides for processes and apparatus adapted for the manufacture or treatment of such devices, except where such processes relate to single step processes for which provision exists elsewhere.

In this subclass:
The expression "solid state body" refers to the body of material within which, or at the surface of which, the physical effects characteristic of the device occur. In thermoelectric devices it includes all materials in the current path.
Regions in or on the body of the device (other than the solid state body itself), which exert an influence on the solid state body electrically, are considered to be "electrodes" whether or not an external electrical connection is made thereto.
{
Electrodes are often referred to as "contacts" in the literature.
}
 An electrode may include several portions and the term includes metallic regions which exert influence on the solid state body through an insulating region, (e.g. capacitive coupling) and inductive coupling arrangements to the body. The dielectric region in a capacitive arrangement is regarded as part of the electrode. In arrangements including several portions only those portions which exert an influence on the solid state body by virtue of their shape, size or disposition or the material of which they are formed are considered to be part of the electrode. The other portions are considered to be "arrangements for conducting electric current to or from the solid state body" or "interconnections between solid state components formed in or on a common substrate", i.e. leads.
The word "device" refers to an electric circuit element; where an electric circuit element is one of a plurality or elements formed in or on a common substrate it is referred to as a "component".
A "complete device" is a device in its fully assembled state which may or may not require further treatment, e.g. electro-forming, before it is ready for use but which does not require the addition of further structural units.
The word "parts" includes all structural units which are included in a complete device.
A "container" is an enclosure forming part of the complete device and is essentially a solid construction in which the body of the device is placed, or which is formed around the body without forming an intimate layer thereon. An enclosure which consists of one or more layers formed on the body and in intimate contact therewith is referred to as an "encapsulation".
"Integrated circuit" is a device where all components, e.g. diodes, resistors, are built up on a common substrate and form the device including interconnections between the components.

"Integration processes" are processes for the manufacture of at least two different components where the process is especially adapted to their integration, e.g. to take advantage of it or to reduce their manufacturing cost.
Example: in a CMOS process, the same ion implant dopes the p-MOS gate and the n-MNOS source and drain.
Consequently, a process for the manufacture of a component per se is not considered as an integration process, even though that component will be part of an integrated circuit.
"Assembly" of a device is the building up of the device from its component constructional units and includes the provision of fillings in containers.
When referring to the periodic table of the elements, either the new IUPAC notation, i.e. numbering system from 1 to 18, or the previous IUPAC form may be used to indicate an element group, e.g. group IV elements according to the previous IUPAC form correspond to group 14 elements according to the new notation

WARNING
-
[C2012.08]
The following IPC groups are not used in the CPC scheme. Subject matter covered by these groups is classified in the following CPC groups
H01L21/301 covered by H01L 21/30
H01L21/328 covered by H01L 29/66075 H01L21/329 covered by H01L 29/66083 H01L21/33 covered by H01L 29/66227 H01L21/331 covered by H01L 29/66234 H01L21/332 covered by H01L 29/66363 H01L21/334 covered by H01L 29/66075 H01L21/335 covered by H01L 29/66409 H01L21/336 covered by H01L 29/66477 H01L21/337 covered by H01L 29/66893 H01L21/338 covered by H01L 29/66848 H01L21/339 covered by H01L 29/66946 H01L 21/58 covered by H01L 24/80
H01L 21/8239 covered by H01L27/105M H01L21/60 covered by H01L 24/80
H01L21/66 covered by H01L 22/34 H01L21/603 covered by H01L 24/80
H01L21/607 covered by H01L 24/80
H01L21/8242 covered by H01L 27/10844
H01L21/8244 covered by H01L 27/11 H01L21/8246 covered by H01L 27/112 H01L21/8247 covered by H01L 27/11517 H01L21/98 covered by H01L 25/50
H01L29/38 covered by H01L 29/04 to H01L 29/36D
H01L29/96 covered by H01L 29/68 to H01L 29/945 H01L51/30 covered by H01L 51/0032
H01L51/40 covered by H01L 51/00A
H01L51/46 covered by H01L 51/0032
H01L51/48 covered by H01L 51/00A
H01L51/54 covered by H01L 51/0032

Groups H01L 23/562 to H01L23/576 do not correspond to former or current IPC groups. Concordance CPC : IPC for these groups is as follows: - H01L 23/562 - H01L 23/564 : H01L 23/00 - H01L 23/57 : H01L 23/58

Groups H01L 22/00 to H01L22/64 do not correspond to a former or current IPC group. Concordance CPC : IPC for these groups is as follows: - H01L 22/00 - H01L 22/34 : H01L21/66

Groups H01L 24/00 to H01L 24/98 do not correspond to former or current IPC groups. Concordance CPC : IPC for these groups is as follows: - H01L 24/00 - H01L 24/98 : H01L 23/00

Group H01L 25/50 does not correspond to a former or current IPC group. Concordance CPC : IPC for this group is as follows: - H01L 25/50 : H01L21/98

Groups H01L 28/00 - H01L 28/92 do not correspond to former or current IPC groups. Concordance CPC : IPC for these groups is as follows: - H01L 28/00 - H01L 28/92 : H01L 49/02

Collapse
H01L 21/00
Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof (
{
testing or measuring during manufacture or treatment, or reliability measurements H01L 22/00; multistep manufacturing processes for passive two-terminal components without a potential-jump or surface barrier for integrated circuits H01L 28/00;
}
(processes or apparatus peculiar to the manufacture or treatment of devices provided for in groups H01L 31/00 to H01L 51/00 or of parts thereof, see these groups; single-step processes covered by other subclasses, see the relevant subclasses, e.g. C23C, C30B; photomechanical production of textured or patterned surfaces, materials or originals therefor, apparatus specially adapted therefor, in general G03F))
Collapse
H01L 21/02
.
Manufacture or treatment of semiconductor devices or of parts thereof
Collapse
H01L 21/02002
. .
{
Preparing wafers
}
NOTE
-
1. This group covers processes for manufacturing wafers prior to the fabrication of any device, i.e. between the sawing of ingots (covered by B28D) and the cleaning of substrates (covered by H01L 21/02F).
2. This group does not cover:
- simple use of grinding or polishing machines B24B
- thermal smoothening H01L 21/324

Collapse
H01L 21/02005
. . .
{
Preparing bulk and homogeneous wafers
}
WARNING
-
Not complete, see H01L 21/30 and subgroups

Collapse
H01L 21/02008
. . . .
{
Multistep processes
}
Collapse
H01L 21/0201
. . . . .
{
Specific process step
}
H01L 21/02013
. . . . . .
{
Grinding, lapping
}
H01L 21/02016
. . . . . .
{
Backside treatment
}
H01L 21/02019
. . . . . .
{
Chemical etching
}
H01L 21/02021
. . . . . .
{
Edge treatment, chamfering
}
H01L 21/02024
. . . . . .
{
Mirror polishing
}
H01L 21/02027
. . . .
{
Setting crystal orientation
}
H01L 21/0203
. . . .
{
Making porous regions on the surface
}
H01L 21/02032
. . . .
{
by reclaiming or re-processing
}
H01L 21/02035
. . . .
{
Shaping
}
H01L 21/02038
. . .
{
Preparing wafers having an insulating layer, e.g. SOI wafers
}
WARNING
-
Not complete, see H01L 21/7624 and subgroups

Collapse
H01L 21/02041
. .
{
Cleaning
}
Collapse
H01L 21/02043
. . .
{
Cleaning before device manufacture, i.e. Begin-Of-Line process
}
Collapse
H01L 21/02046
. . . .
{
Dry cleaning only (H01L 21/02085 takes precedence)
}
H01L 21/02049
. . . . .
{
with gaseous HF
}
H01L 21/02052
. . . .
{
Wet cleaning only (H01L 21/02085 takes precedence)
}
H01L 21/02054
. . . .
{
combining dry and wet cleaning steps (H01L 21/02085 takes precedence)
}
Collapse
H01L 21/02057
. . .
{
Cleaning during device manufacture
}
Collapse
H01L 21/0206
. . . .
{
during, before or after processing of insulating layers
}
H01L 21/02063
. . . . .
{
the processing being the formation of vias or contact holes
}
H01L 21/02065
. . . . .
{
the processing being a planarization of insulating layers
}
Collapse
H01L 21/02068
. . . .
{
during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
}
H01L 21/02071
. . . . .
{
the processing being a delineation, e.g. RIE, of conductive layers
}
H01L 21/02074
. . . . .
{
the processing being a planarization of conductive layers
}
H01L 21/02076
. . .
{
Cleaning after the substrates have been singulated
}
H01L 21/02079
. . .
{
Cleaning for reclaiming
}
Collapse
H01L 21/02082
. . .
{
product to be cleaned
}
H01L 21/02085
. . . .
{
Cleaning of diamond
}
H01L 21/02087
. . . .
{
Cleaning of wafer edges
}
H01L 21/0209
. . . .
{
Cleaning of wafer backside
}
H01L 21/02093
. . . .
{
Cleaning of porous materials
}
H01L 21/02096
. . .
{
only mechanical cleaning
}
H01L 21/02098
. . .
{
only involving lasers, e.g. laser ablation
}
H01L 21/02101
. . .
{
only involving supercritical fluids
}
Collapse
H01L 21/02104
. .
{
Forming layers (deposition in general C23C; crystal growth in general C30B)
}
WARNING
-
Group H01L 21/02104 and subgroups are not complete pending reorganisation. See also groups H01L 21/20, H01L 21/36, H01L 21/06, H01L 21/16 and subgroups

Collapse
H01L 21/02107
. . .
{
Forming insulating materials on a substrate
}
WARNING
-
This group and subgroups are not complete pending the completion of a reclassification; see also H01L 21/312, H01L 21/314, H01L 21/316, and H01L 21/318 and subgroups thereof

Collapse
H01L 21/02109
. . . .
{
characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
}
Collapse
H01L 21/02112
. . . . .
{
characterised by the material of the layer
}
NOTE
-
Layers comprising sublayers, i.e. multi-layers, are additionally classified in H01L21/02KC3; porous layers are additionally classified in H01L 21/02203

H01L 21/02115
. . . . . .
{
the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
}
Collapse
H01L 21/02118
. . . . . .
{
carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC (polymers per se C08G, photoresist per se G03F)
}
H01L 21/0212
. . . . . . .
{
the material being fluoro carbon compounds, e.g. (CFx)
}
n,(CHxFy)n or polytetrafluoroethylene]
Collapse
H01L 21/02123
. . . . . .
{
the material containing silicon
}
Collapse
H01L 21/02126
. . . . . . .
{
the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
}
H01L 21/02129
. . . . . . . .
{
the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
}
NOTE
-
Halogen, e.g. fluorine, containing BPSG, PSG, BSG, and the like, are additionally classified in H01L 21/02131

H01L 21/02131
. . . . . . . .
{
the material being halogen doped silicon oxides, e.g. FSG
}
H01L 21/02134
. . . . . . . .
{
the material comprising hydrogen silsesquioxane, e.g. HSQ
}
H01L 21/02137
. . . . . . . .
{
the material comprising alkyl silsesquioxane, e.g. MSQ
}
H01L 21/0214
. . . . . . . .
{
the material being a silicon oxynitride, e.g. SiON or SiON:H
}
Collapse
H01L 21/02142
. . . . . . .
{
the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
}
H01L 21/02145
. . . . . . . .
{
the material containing aluminium, e.g. AlSiOx
}
H01L 21/02148
. . . . . . . .
{
the material containing hafnium, e.g. HfSiOx or HfSiON
}
H01L 21/0215
. . . . . . . .
{
the material containing tantalum, e.g. TaSiOx
}
H01L 21/02153
. . . . . . . .
{
the material containing titanium, e.g. TiSiOx
}
H01L 21/02156
. . . . . . . .
{
the material containing at least one rare earth element, e.g. silicate of lanthanides, scandium or yttrium
}
H01L 21/02159
. . . . . . . .
{
the material containing zirconium, e.g. ZrSiOx
}
H01L 21/02161
. . . . . . . .
{
the material containing more than one metal element
}
H01L 21/02164
. . . . . . .
{
the material being a silicon oxide, e.g. SiO2
}
NOTE
-
The formation of silicon oxide layers is classified in this group regardless of the precursor or of the process of formation; in case of explicit statements on doping, on rest-groups, or on material components see H01L 21/02126 and subgroups; deposition of silicon oxide from organic precursors without further statements on film composition is classified here and in H01L 21/02205 and subgroups

H01L 21/02167
. . . . . . .
{
the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides (H01L 21/02126 and H01L 21/0214 take precedence)
}
H01L 21/0217
. . . . . . .
{
the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz (H01L 21/02126 and H01L 21/0214 take precedence)
}
Collapse
H01L 21/02172
. . . . . .
{
the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides (materials containing silicon H01L 21/02123; metal silicates H01L 21/02142)
}
Collapse
H01L 21/02175
. . . . . . .
{
characterised by the metal (H01L 21/02197 takes precedence)
}
H01L 21/02178
. . . . . . . .
{
the material containing aluminium, e.g. Al2O3
}
H01L 21/02181
. . . . . . . .
{
the material containing hafnium, e.g. HfO2
}
H01L 21/02183
. . . . . . . .
{
the material containing tantalum, e.g. Ta2O5
}
H01L 21/02186
. . . . . . . .
{
the material containing titanium, e.g. TiO2
}
H01L 21/02189
. . . . . . . .
{
the material containing zirconium, e.g. ZrO2
}
H01L 21/02192
. . . . . . . .
{
the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
}
H01L 21/02194
. . . . . . . .
{
the material containing more than one metal element
}
H01L 21/02197
. . . . . . .
{
the material having a perovskite structure, e.g. BaTiO3
}
H01L 21/022
. . . . .
{
the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H01L 21/02304, H01L 21/02362)
}
H01L 21/02203
. . . . .
{
the layer being porous
}
Collapse
H01L 21/02205
. . . . .
{
the layer being characterised by the precursor material for deposition
}
Collapse
H01L 21/02208
. . . . . .
{
the precursor containing a compound comprising Si
}
H01L 21/02211
. . . . . . .
{
the compound being a silane, e.g. disilane, methylsilane or chlorosilane
}
Collapse
H01L 21/02214
. . . . . . .
{
the compound comprising silicon and oxygen
}
NOTE
-
This group does not cover mixtures of a silane and oxygen

H01L 21/02216
. . . . . . . .
{
the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
}
Collapse
H01L 21/02219
. . . . . . .
{
the compound comprising silicon and nitrogen
}
NOTE
-
This group does not cover mixtures of silane and nitrogen

H01L 21/02222
. . . . . . . .
{
the compound being a silazane
}
Collapse
H01L 21/02225
. . . .
{
characterised by the process for the formation of the insulating layer
}
Collapse
H01L 21/02227
. . . . .
{
formation by a process other than a deposition process
}
NOTE
-
Subject matter classified in the range of H01L 21/0223 to H01L 21/02249 is additionally classified in H01L 21/02249, H01L 21/02255 and H01L 21/02252, depending on the type of reaction

Collapse
H01L 21/0223
. . . . . .
{
formation by oxidation, e.g. oxidation of the substrate
}
Collapse
H01L 21/02233
. . . . . . .
{
of the semiconductor substrate or a semiconductor layer
}
Collapse
H01L 21/02236
. . . . . . . .
{
group IV semiconductor
}
H01L 21/02238
. . . . . . . . .
{
silicon in uncombined form, i.e. pure silicon
}
H01L 21/02241
. . . . . . . .
{
III-V semiconductor
}
H01L 21/02244
. . . . . . .
{
of a metallic layer
}
H01L 21/02247
. . . . . .
{
formation by nitridation, e.g. nitridation of the substrate
}
H01L 21/02249
. . . . . .
{
formation by combined oxidation and nitridation performed simultaneously
}
H01L 21/02252
. . . . . .
{
formation by plasma treatment, e.g. plasma oxidation of the substrate (after treatment of an insulating film by plasma H01L 21/3105 and subgroups)
}
H01L 21/02255
. . . . . .
{
formation by thermal treatment (H01L 21/02252 takes precedence; after treatment of an insulating film H01L 21/3105 and subgroups)
}
H01L 21/02258
. . . . . .
{
formation by anodic treatment, e.g. anodic oxidation
}
Collapse
H01L 21/0226
. . . . .
{
formation by a deposition process (per se C23C)
}
Collapse
H01L 21/02263
. . . . . .
{
deposition from the gas or vapour phase
}
NOTE
-
This group and subgroups also cover deposition methods in which the gas or vapour is produced by physical means, e.g. ablation from targets or heating of source material

H01L 21/02266
. . . . . . .
{
deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
}
H01L 21/02269
. . . . . . .
{
deposition by thermal evaporation, H01L 21/02293 takes precedence
}
NOTE
-
Subject matter relating to molecular beam epitaxy is classified in this group

Collapse
H01L 21/02271
. . . . . . .
{
deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (H01L 21/02266 takes precedence)
}
H01L 21/02274
. . . . . . . .
{
in the presence of a plasma (PECVD)
}
H01L 21/02277
. . . . . . . .
{
the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
}
H01L 21/0228
. . . . . . . .
{
deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
}
NOTE
-
Subject matter relating to cyclic plasma CVD is additionally classified in H01L 21/02274

Collapse
H01L 21/02282
. . . . . .
{
liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
}
H01L 21/02285
. . . . . . .
{
Langmuir-Blodgett techniques
}
H01L 21/02288
. . . . . . .
{
printing, e.g. ink-jet printing (per se B41J)
}
H01L 21/0229
. . . . . . .
{
liquid atomic layer deposition
}
H01L 21/02293
. . . . . .
{
formation of epitaxial layers by a deposition process(epitaxial growth per se C30B)
}
NOTE
-
Formation of non-epitaxial layers by MBE, ALE, etc. is not covered by this group; for MBE see H01L 21/02269; for ALE see H01L 21/0228

Collapse
H01L 21/02296
. . . .
{
characterised by the treatment performed before or after the formation of the layer (H01L 21/02227 and subgroups take precedence)
}
NOTE
-
This group and subgroups only cover processes which are directly linked to the layer formation; routine anneals, i.e. thermal treatment without further features like a special atmosphere, presence of a plasma, thermally induced chemical reactions, change of phase (crystal structure) etc. are not classified here; for cleaning see H01L 21/02041 and subgroups; for etching processes see H01L 21/311 and subgroups; for planarization processes see H01L 21/31051 and subgroups; for processes to repair etch damage see H01L 21/3105 and subgroups

Collapse
H01L 21/02299
. . . . .
{
pre-treatment
}
NOTE
-
This group and subgroups cover treatments to improve adhesion or change the surface termination; for etching see H01L 21/306 and subgroups and H01L 21/311 and subgroups

H01L 21/02301
. . . . . .
{
in-situ cleaning
}
NOTE
-
Subject matter relating to the cleaning processes for semiconductor devices in general is covered by H01L 21/02041 and subgroups

H01L 21/02304
. . . . . .
{
formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
}
H01L 21/02307
. . . . . .
{
treatment by exposure to a liquid
}
H01L 21/0231
. . . . . .
{
treatment by exposure to electromagnetic radiation, e.g. UV light
}
Collapse
H01L 21/02312
. . . . . .
{
treatment by exposure to a gas or vapour
}
H01L 21/02315
. . . . . . .
{
treatment by exposure to a plasma
}
Collapse
H01L 21/02318
. . . . .
{
post-treatment
}
NOTE
-
This group only covers processes that are part of the layer formation; treatments which are performed after completion of the insulating layer are covered by H01L 21/3105 and subgroups

Collapse
H01L 21/02321
. . . . . .
{
introduction of substances into an already existing insulating layer; H01L 21/02227 and subgroups take precedence
}
NOTE
-
processes like the introduction of phosphorus into silicon oxide by diffusion, or doping of an already existing insulating layer are covered by this group and subgroups; for the method of introduction, see H01L 21/02337, H01L 21/02343, H01L 21/02345 and subgroups

Collapse
H01L 21/02323
. . . . . . .
{
introduction of oxygen
}
H01L 21/02326
. . . . . . . .
{
into a nitride layer, e.g. changing SiN to SiON
}
Collapse
H01L 21/02329
. . . . . . .
{
introduction of nitrogen
}
H01L 21/02332
. . . . . . . .
{
into an oxide layer, e.g. changing SiO to SiON
}
H01L 21/02334
. . . . . .
{
in-situ cleaning after layer formation, e.g. removing process residues (cleaning compositions per se C30D; cleaning in general B08B)
}
NOTE
-
Subject matter relating to the cleaning processes for semiconductor devices in general is covered by H01L 21/02041 and subgroups

Collapse
H01L 21/02337
. . . . . .
{
treatment by exposure to a gas or vapour
}
H01L 21/0234
. . . . . . .
{
treatment by exposure to a plasma
}
H01L 21/02343
. . . . . .
{
treatment by exposure to a liquid
}
Collapse
H01L 21/02345
. . . . . .
{
treatment by exposure to radiation, e.g. visible light
}
H01L 21/02348
. . . . . . .
{
treatment by exposure to UV light
}
H01L 21/02351
. . . . . . .
{
treatment by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions
}
H01L 21/02354
. . . . . . .
{
using a coherent radiation, e.g. a laser
}
H01L 21/02356
. . . . . .
{
treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
}
H01L 21/02359
. . . . . .
{
treatment to change the surface groups of the insulating layer
}
H01L 21/02362
. . . . . .
{
formation of intermediate layers, e.g. capping layers or diffusion barriers
}
Collapse
H01L 21/02365
. . .
{
Forming inorganic semiconducting materials on a substrate (for light-sensitive devices H01L 31/00)
}
Collapse
H01L 21/02367
. . . .
{
Substrates
}
Collapse
H01L 21/0237
. . . . .
{
Materials
}
Collapse
H01L 21/02373
. . . . . .
{
Group 14 semiconducting materials
}
H01L 21/02376
. . . . . . .
{
Carbon, e.g. diamond-like carbon
}
H01L 21/02378
. . . . . . .
{
Silicon carbide
}
H01L 21/02381
. . . . . . .
{
Silicon, silicon germanium, germanium
}
H01L 21/02384
. . . . . . .
{
including tin
}
Collapse
H01L 21/02387
. . . . . .
{
Group 13/15 materials
}
H01L 21/02389
. . . . . . .
{
Nitrides
}
H01L 21/02392
. . . . . . .
{
Phosphides
}
H01L 21/02395
. . . . . . .
{
Arsenides
}
H01L 21/02398
. . . . . . .
{
Antimonides
}
Collapse
H01L 21/024
. . . . . .
{
Group 12/16 materials
}
H01L 21/02403
. . . . . . .
{
Oxides
}
H01L 21/02406
. . . . . . .
{
Sulfides
}
H01L 21/02409
. . . . . . .
{
Selenides
}
H01L 21/02411
. . . . . . .
{
Tellurides
}
H01L 21/02414
. . . . . .
{
Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
}
H01L 21/02417
. . . . . .
{
Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
}
H01L 21/0242
. . . . . .
{
Crystalline insulating materials
}
H01L 21/02422
. . . . . .
{
Non-crystalline insulating materials, e.g. glass, polymers
}
H01L 21/02425
. . . . . .
{
Conductive materials, e.g. metallic silicides
}
Collapse
H01L 21/02428
. . . . .
{
Structure
}
H01L 21/0243
. . . . . .
{
Surface structure
}
H01L 21/02433
. . . . .
{
Crystal orientation
}
Collapse
H01L 21/02436
. . . .
{
Intermediate layers between substrates and deposited layers
}
Collapse
H01L 21/02439
. . . . .
{
Materials
}
Collapse
H01L 21/02441
. . . . . .
{
Group 14 semiconducting materials
}
H01L 21/02444
. . . . . . .
{
Carbon, e.g. diamond-like carbon
}
H01L 21/02447
. . . . . . .
{
Silicon carbide
}
H01L 21/0245
. . . . . . .
{
Silicon, silicon germanium, germanium
}
H01L 21/02452
. . . . . . .
{
including tin
}
Collapse
H01L 21/02455
. . . . . .
{
Group 13/15 materials
}
H01L 21/02458
. . . . . . .
{
Nitrides
}
H01L 21/02461
. . . . . . .
{
Phosphides
}
H01L 21/02463
. . . . . . .
{
Arsenides
}
H01L 21/02466
. . . . . . .
{
Antimonides
}
Collapse
H01L 21/02469
. . . . . .
{
Group 12/16 materials
}
H01L 21/02472
. . . . . . .
{
Oxides
}
H01L 21/02474
. . . . . . .
{
Sulfides
}
H01L 21/02477
. . . . . . .
{
Selenides
}
H01L 21/0248
. . . . . . .
{
Tellurides
}
H01L 21/02483
. . . . . .
{
Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
}
H01L 21/02485
. . . . . .
{
Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
}
H01L 21/02488
. . . . . .
{
Insulating materials
}
H01L 21/02491
. . . . . .
{
Conductive materials
}
Collapse
H01L 21/02494
. . . . .
{
Structure
}
Collapse
H01L 21/02496
. . . . . .
{
Layer structure
}
H01L 21/02499
. . . . . . .
{
Monolayers
}
H01L 21/02502
. . . . . . .
{
consisting of two layers
}
Collapse
H01L 21/02505
. . . . . . .
{
consisting of more than two layers
}
H01L 21/02507
. . . . . . . .
{
Alternating layers, e.g. superlattice
}
H01L 21/0251
. . . . . . .
{
Graded layers
}
H01L 21/02513
. . . . . .
{
Microstructure
}
H01L 21/02516
. . . . .
{
Crystal orientation
}
Collapse
H01L 21/02518
. . . .
{
Deposited layers
}
Collapse
H01L 21/02521
. . . . .
{
Materials
}
Collapse
H01L 21/02524
. . . . . .
{
Group 14 semiconducting materials
}
H01L 21/02527
. . . . . . .
{
Carbon, e.g. diamond-like carbon
}
H01L 21/02529
. . . . . . .
{
Silicon carbide
}
H01L 21/02532
. . . . . . .
{
Silicon, silicon germanium, germanium
}
H01L 21/02535
. . . . . . .
{
including tin
}
Collapse
H01L 21/02538
. . . . . .
{
Group 13/15 materials
}
H01L 21/0254
. . . . . . .
{
Nitrides
}
H01L 21/02543
. . . . . . .
{
Phosphides
}
H01L 21/02546
. . . . . . .
{
Arsenides
}
H01L 21/02549
. . . . . . .
{
Antimonides
}
Collapse
H01L 21/02551
. . . . . .
{
Group 12/16 materials
}
H01L 21/02554
. . . . . . .
{
Oxides
}
H01L 21/02557
. . . . . . .
{
Sulfides
}
H01L 21/0256
. . . . . . .
{
Selenides
}
H01L 21/02562
. . . . . . .
{
Tellurides
}
H01L 21/02565
. . . . . .
{
Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
}
H01L 21/02568
. . . . . .
{
Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
}
Collapse
H01L 21/0257
. . . . .
{
Doping during depositing
}
Collapse
H01L 21/02573
. . . . . .
{
Conductivity type
}
H01L 21/02576
. . . . . . .
{
N-type
}
H01L 21/02579
. . . . . . .
{
P-type
}
H01L 21/02581
. . . . . . .
{
Transition metal or rare earth elements
}
H01L 21/02584
. . . . . .
{
Delta-doping
}
Collapse
H01L 21/02587
. . . . .
{
Structure
}
Collapse
H01L 21/0259
. . . . . .
{
Microstructure
}
H01L 21/02592
. . . . . . .
{
amorphous
}
H01L 21/02595
. . . . . . .
{
polycrystalline
}
H01L 21/02598
. . . . . . .
{
monocrystalline
}
H01L 21/02601
. . . . . . .
{
Nanoparticles (fullerenes H01L 51/0046)
}
H01L 21/02603
. . . . . . .
{
Nanowires
}
H01L 21/02606
. . . . . . .
{
Nanotubes (carbon nanotubes H01L 51/0048)
}
H01L 21/02609
. . . . .
{
Crystal orientation
}
Collapse
H01L 21/02612
. . . .
{
Formation types
}
H01L 21/02614
. . . . .
{
Transformation of metal, e.g. oxidation, nitridation
}
Collapse
H01L 21/02617
. . . . .
{
Deposition types
}
H01L 21/0262
. . . . . .
{
Reduction or decomposition of gaseous compounds, e.g. CVD
}
Collapse
H01L 21/02623
. . . . . .
{
Liquid deposition
}
H01L 21/02625
. . . . . . .
{
using melted materials
}
H01L 21/02628
. . . . . . .
{
using solutions
}
H01L 21/02631
. . . . . .
{
Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
}
H01L 21/02634
. . . . . .
{
Homoepitaxy
}
Collapse
H01L 21/02636
. . . . . .
{
Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
}
Collapse
H01L 21/02639
. . . . . . .
{
Preparation of substrate for selective deposition
}
H01L 21/02642
. . . . . . . .
{
Mask materials other than SiO2 or SiN
}
H01L 21/02645
. . . . . . . .
{
Seed materials
}
Collapse
H01L 21/02647
. . . . . . .
{
Lateral overgrowth
}
H01L 21/0265
. . . . . . . .
{
Pendeoepitaxy
}
H01L 21/02653
. . . . . . .
{
Vapour-liquid-solid growth
}
Collapse
H01L 21/02656
. . . .
{
Special treatments
}
Collapse
H01L 21/02658
. . . . .
{
Pretreatments (cleaning in general H01L 21/02041)
}
H01L 21/02661
. . . . . .
{
In-situ cleaning
}
Collapse
H01L 21/02664
. . . . .
{
Aftertreatments (planarisation in general H01L 21/304)
}
Collapse
H01L 21/02667
. . . . . .
{
Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
}
H01L 21/02669
. . . . . . .
{
using crystallisation inhibiting elements
}
H01L 21/02672
. . . . . . .
{
using crystallisation enhancing elements
}
Collapse
H01L 21/02675
. . . . . . .
{
using laser beams
}
Collapse
H01L 21/02678
. . . . . . . .
{
Beam shaping, e.g. using a mask
}
H01L 21/0268
. . . . . . . . .
{
Shape of mask
}
H01L 21/02683
. . . . . . . .
{
Continuous wave laser beam
}
H01L 21/02686
. . . . . . . .
{
Pulsed laser beam
}
H01L 21/02689
. . . . . . .
{
using particle beams
}
H01L 21/02691
. . . . . . .
{
Scanning of a beam
}
H01L 21/02694
. . . . . .
{
Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
}
H01L 21/02697
. . .
{
Forming conducting materials on a substrate
}
Collapse
H01L 21/027
. .
Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L 21/18 or H01L 21/34
{
(photographic masks or originals per se G03F 1/00; registration or positioning of photographic masks or originals G03F 9/00; photographic cameras G03B; control of position G05D 3/00)
}
Collapse
H01L 21/0271
. . .
{
comprising organic layers
}
H01L 21/0272
. . . .
{
for lift-off processes
}
Collapse
H01L 21/0273
. . . .
{
characterised by the treatment of photoresist layers
}
Collapse
H01L 21/0274
. . . . .
{
Photolithographic processes
}
H01L 21/0275
. . . . . .
{
using lasers
}
H01L 21/0276
. . . . . .
{
using an anti-reflective coating (anti-reflective coating for lithography in general G03F 7/09)
}
H01L 21/0277
. . . . .
{
Electrolithographic processes
}
H01L 21/0278
. . . . .
{
Röntgenlithographic or X-ray lithographic processes
}
H01L 21/0279
. . . . .
{
Ionlithographic processes
}
Collapse
H01L 21/033
. . .
comprising inorganic layers
H01L 21/0331
. . . .
{
for lift-off processes
}
H01L 21/0332
. . . .
{
characterised by their composition, e.g. multilayer masks, materials
}
Collapse
H01L 21/0334
. . . .
{
characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
}
H01L 21/0335
. . . . .
{
characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
}
H01L 21/0337
. . . . .
{
characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
}
H01L 21/0338
. . . . .
{
Process specially adapted to improve the resolution of the mask
}
Collapse
H01L 21/04
. .
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
{
(multistep processes specially adapted for the manufacture of said devices H01L 29/66007, H01L 29/401; details of semiconductor bodies H01L 29/02)
}
Collapse
H01L 21/0405
. . .
{
the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon (multistep processes for the manufacture of said devices H01L 29/66015)
}
NOTE
-
This group covers passivation

Collapse
H01L 21/041
. . . .
{
Making n- or p-doped regions
}
H01L 21/0415
. . . . .
{
using ion implantation
}
H01L 21/042
. . . .
N: Changing their shape, e.g. forming recesses (etching of the semiconductor body H01L 21/302)]
Collapse
H01L 21/0425
. . . .
{
Making electrodes
}
H01L 21/043
. . . . .
{
Ohmic electrodes
}
H01L 21/0435
. . . . .
{
Schottky electrodes
}
H01L 21/044
. . . . .
{
Conductor-insulator-semiconductor electrodes
}
Collapse
H01L 21/0445
. . .
{
the devices having semiconductor bodies comprising crystalline silicon carbide (multistep processes for the manufacture of said devices H01L 29/66053)
}
H01L 21/045
. . . .
{
passivating silicon carbide surfaces
}
Collapse
H01L 21/0455
. . . .
{
Making n or p doped regions or layers, e.g. using diffusion
}
Collapse
H01L 21/046
. . . . .
{
using ion implantation
}
NOTE
-
Processes where ion implantation of boron and subsequent annealing does not produce a p-doped region are classified elsewhere, e.g. H01L 21/0445

H01L 21/0465
. . . . . .
{
using masks
}
H01L 21/047
. . . . . .
{
characterised by the angle between the ion beam and the crystal planes or the main crystal surface
}
H01L 21/0475
. . . .
{
Changing the shape of the semiconductor body, e.g. forming recesses, (etching of the semiconductor body H01L 21/302)
}
Collapse
H01L 21/048
. . . .
{
Making electrodes
}
H01L 21/0485
. . . . .
{
Ohmic electrodes
}
H01L 21/049
. . . . .
{
Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
}
H01L 21/0495
. . . . .
{
Schottky electrodes
}
Collapse
H01L 21/06
. . .
the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
WARNING
-
This group is no longer used for the classification of new documents as from December 1, 2009. The backlog of this group is being continuously reclassified to H01L 21/02365 and subgroups

H01L 21/08
. . . .
Preparation of the foundation plate
Collapse
H01L 21/10
. . . .
Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
H01L 21/101
. . . . .
{
Application of the selenium or tellurium to the foundation plate
}
H01L 21/103
. . . . .
Conversion of the selenium or tellurium to the conductive state
H01L 21/105
. . . . .
Treatment of the surface of the selenium or tellurium layer after having been made conductive
H01L 21/108
. . . . .
Provision of discrete insulating layers, i.e. non-genetic barrier layers
H01L 21/12
. . . .
Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to the foundation plate
Collapse
H01L 21/14
. . . .
Treatment of the complete device, e.g. by electroforming to form a barrier
H01L 21/145
. . . . .
Ageing
Collapse
H01L 21/16
. . .
the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
WARNING
-
This group is no longer used for the classification of new documents as from December 1, 2009. The backlog of this group is being continuously reclassified to H01L 21/02365 and subgroups]

Collapse
H01L 21/161
. . . .
{
Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
}
H01L 21/162
. . . . .
{
Preliminary treatment of the foundation plate
}
H01L 21/164
. . . . .
{
Oxidation and subsequent heat treatment of the foundation plate (H01L 21/165 takes precedence)
}
H01L 21/165
. . . . .
{
Reduction of the copper oxide, treatment of the oxide layer
}
H01L 21/167
. . . . .
{
Application of a non-genetic conductive layer
}
H01L 21/168
. . . .
{
Treatment of the complete device, e.g. electroforming, ageing
}
Collapse
H01L 21/18
. . .
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
{
(H01L 21/041 to H01L 21/0425, H01L 21/045 to H01L 21/048 take precedence)
}
NOTE
-
This group covers also processes and apparatus which, by using the appropriate technology, are clearly suitable for manufacture or treatment of devices whose bodies comprise elements of the fourth group of the Periodic System or AIIIBV compounds, even if the material used is not explicitly specified.

H01L 21/182
. . . .
{
Intermixing or interdiffusion or disordering of III-V heterostructures, e.g. IILD
}
Collapse
H01L 21/185
. . . .
{
Joining of semiconductor bodies for junction formation
}
H01L 21/187
. . . . .
{
by direct bonding
}
Collapse
H01L 21/20
. . . .
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
{
solid phase epitaxy
}
WARNING
-
This group is no longer used for the classification of new documents as from December 1, 2009. The backlog of this group is being continuously reclassified to H01L 21/02365 and subgroups

Collapse
H01L 21/2003
. . . . .
{
Characterised by the substrate (H01L 21/203, H01L 21/205, H01L 21/208 take precedence)
}
H01L 21/2007
. . . . . .
{
Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer (H01L 21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L 21/187)
}
H01L 21/2011
. . . . . .
{
the substrate being of crystalline insulating material, e.g. sapphire
}
H01L 21/2015
. . . . . .
{
the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
}
H01L 21/2018
. . . . .
{
Selective epilaxial growth, e.g. simultaneous deposition of mono - and non-mono semiconductor materials
}
Collapse
H01L 21/2022
. . . . .
{
Epitaxial regrowth of non-monocrystalline semiconductor materials, e.g. lateral epitaxy by seeded solidification, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline materials
}
H01L 21/2026
. . . . . .
{
using a coherent energy beam, e.g. laser or electron beam
}
Collapse
H01L 21/203
. . . . .
using physical deposition, e.g. vacuum deposition, sputtering
H01L 21/2033
. . . . . .
{
Epitaxial deposition of elements of the Fourth Group of the Periodic System, e.g. Si, Ge
}
H01L 21/2036
. . . . . .
{
Epitaxial deposition of AIII BV compounds
}
Collapse
H01L 21/205
. . . . .
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/2053
. . . . . .
{
Expitaxial deposition of elements of the Fourth Group of the Periodic System, e.g. Si, Ge
}
H01L 21/2056
. . . . . .
{
Epitaxial deposition of AIIIBV compounds
}
Collapse
H01L 21/208
. . . . .
using liquid deposition
H01L 21/2085
. . . . . .
{
Epitaxial deposition of AIIIBV compounds
}
Collapse
H01L 21/22
. . . .
Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions;
{
Interactions between two or more impurities; Redistribution of impurities
}
H01L 21/2205
. . . . .
{
from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
}
Collapse
H01L 21/221
. . . . .
{
of killers
}
H01L 21/2215
. . . . . .
{
in AIIIBV compounds
}
H01L 21/222
. . . . .
{
Lithium-drift
}
H01L 21/2225
. . . . .
{
Diffusion sources
}
Collapse
H01L 21/223
. . . . .
using diffusion into or out of a solid from or into a gaseous phase
{
(H01L 21/221 to H01L 21/222 take precedence; diffusion through an applied layer H01L 21/225)
}
H01L 21/2233
. . . . . .
{
Diffusion into or out of AIIIBV compounds
}
H01L 21/2236
. . . . . .
{
from or into a plasma phase
}
Collapse
H01L 21/225
. . . . .
using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
{
(H01L 21/221 to H01L 21/222 take precedence)
}
Collapse
H01L 21/2251
. . . . . .
{
Diffusion into or out of group IV semiconductors
}
Collapse
H01L 21/2252
. . . . . . .
{
using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
}
H01L 21/2253
. . . . . . . .
{
by ion implantation
}
NOTE
-
In groups H01L 21/2254 to H01L 21/2257 one should consider the main compositional parts of the applied layer just before the diffusion step

Collapse
H01L 21/2254
. . . . . . .
{
from or through or into an applied layer, e.g. photoresist, nitrides
}
Collapse
H01L 21/2255
. . . . . . . .
{
the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
}
H01L 21/2256
. . . . . . . . .
{
through the applied layer
}
H01L 21/2257
. . . . . . . .
{
the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
}
H01L 21/2258
. . . . . .
{
Diffusion into or out of AIIIBV compounds
}
H01L 21/228
. . . . .
using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
{
(H01L 21/221 to H01L 21/222 take precedence)
}
Collapse
H01L 21/24
. . . .
Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
{
(H01L 21/182 takes precedence)
}
H01L 21/242
. . . . .
{
Alloying of doping materials with AIIIBV compounds
}
Collapse
H01L 21/244
. . . . .
{
Alloying of electrode materials
}
H01L 21/246
. . . . . .
{
with AIIIBV compounds
}
H01L 21/248
. . . . .
{
Apparatus specially adapted for the alloying
}
Collapse
H01L 21/26
. . . .
Bombardment with radiation
{
(H01L 21/3105 takes precedence)
}
H01L 21/2605
. . . . .
{
using natural radiation, e.g. alpha, beta or gamma radiation
}
H01L 21/261
. . . . .
to produce a nuclear reaction transmuting chemical elements
Collapse
H01L 21/263
. . . . .
with high-energy radiation (H01L 21/261 takes precedence)
H01L 21/2633
. . . . . .
{
for etching, e.g. sputteretching
}
H01L 21/2636
. . . . . .
{
for heating, e.g. electron beam heating
}
Collapse
H01L 21/265
. . . . . .
producing ion implantation (ion beam tubes for localised treatment H01J 37/30)
WARNING
-
H01L 21/265C, H01L 21/2658 and H01L 21/26593 are not complete, see provisionally also H01L 21/26506 and H01L 21/2654 and their subgroups

Collapse
H01L 21/26506
. . . . . . .
{
in group IV semiconductors
}
Collapse
H01L 21/26513
. . . . . . . .
{
of electrically active species
}
H01L 21/2652
. . . . . . . . .
{
Through-implantation
}
H01L 21/26526
. . . . . . . .
{
Recoil-implantation
}
H01L 21/26533
. . . . . . . .
{
of electrically inactive species in silicon to make buried insulating layers
}
Collapse
H01L 21/2654
. . . . . . .
{
in AIIIBV compounds
}
Collapse
H01L 21/26546
. . . . . . . .
{
of electrically active species
}
H01L 21/26553
. . . . . . . . .
{
Through-implantation
}
H01L 21/2656
. . . . . . . .
{
characterised by the implantation of both electrically active and inactive species in the same semiconductor region to be doped
}
H01L 21/26566
. . . . . . .
{
of a cluster, e.g. using a gas cluster ion beam
}
H01L 21/2658
. . . . . . .
{
of a molecular ion, e.g. decaborane
}
H01L 21/26586
. . . . . . .
{
characterised by the angle between the ion beam and the crystal planes or the main crystal surface
}
H01L 21/26593
. . . . . . .
{
at a temperature lower than room temperature
}
H01L 21/266
. . . . . . .
using masks
{
(H01L 21/26586 takes precedence)
}
Collapse
H01L 21/268
. . . . . .
using electromagnetic radiation, e.g. laser radiation
H01L 21/2683
. . . . . . .
{
using X-ray lasers
}
H01L 21/2686
. . . . . . .
{
using incoherent radiation
}
Collapse
H01L 21/28
. . . .
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in H01L 21/20 to H01L 21/268;
{
etching for patterning the electrodes H01L 21/311 and H01L 21/3213
}
Collapse
H01L 21/28008
. . . . .
{
Making conductor-insulator-semiconductor electrodes
}
Collapse
H01L 21/28017
. . . . . .
{
the insulator being formed after the semiconductor body, the semiconductor being silicon
}
NOTE
-
This group covers deposition of the insulators, including epitaxial insulators, and the conductors within the same process or chamber

Collapse
H01L 21/28026
. . . . . . .
{
characterised by the conductor (H01L 21/28176 takes precedence)
}
NOTE
-
When the final conductor comprises a superconductor, subject matter is not classified according to the subgroups H01L 21/28035 to H01L 21/28097. Instead, it is classified in H01L 21/28026

Collapse
H01L 21/28035
. . . . . . . .
{
the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities (H01L 21/28105 takes precedence)
}
NOTE
-
A very thin, e.g. silicon, adhesion or seed layer is not considered as the one next to the insulator

Collapse
H01L 21/28044
. . . . . . . . .
{
the conductor comprising at least another non-silicon conductive layer
}
H01L 21/28052
. . . . . . . . . .
{
the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer (formed by metal ion implantation H01L 21/28044)
}
H01L 21/28061
. . . . . . . . . .
{
the conductor comprising a metal or metallic silicode formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction (H01L 21/28052 takes precedence)
}
NOTE
-
To assess the coverage of groups H01L 21/28052 and H01L 21/28061, barrier layers, e.g. TaSiN, are not considered

H01L 21/2807
. . . . . . . .
{
the final conductor layer next to the insulator being Si or Ge or C and their alloys except Si
}
H01L 21/28079
. . . . . . . .
{
the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
}
H01L 21/28088
. . . . . . . .
{
the final conductor layer next to the insulator being a composite, e.g. TiN
}
H01L 21/28097
. . . . . . . .
{
the final conductor layer next to the insulator being a metallic silicide
}
H01L 21/28105
. . . . . . . .
{
the final conductor next to the insulator having a lateral composition or doping variation, or being formed laterally by more than one deposition step
}
H01L 21/28114
. . . . . . . .
{
characterised by the sectional shape, e.g. T, inverted-T
}
NOTE
-
Documents are also classified in groups H01L 21/28035 to H01L 21/28105 when the composition is also relevant

Collapse
H01L 21/28123
. . . . . . . .
{
Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
}
H01L 21/28132
. . . . . . . . .
{
conducting part of electrode is difined by a sidewall spacer or a similar technique, e.g. oxidation under mask, plating
}
H01L 21/28141
. . . . . . . . .
{
insulating part of the electrode is defined by a sidewall spacer, e.g. dummy spacer, or a similar technique, e.g. oxidation under mask, plating
}
H01L 21/2815
. . . . . . . . .
{
part or whole of the electrode is a sidewall spacer or made by a similar technique, e.g. transformation under mask, plating
}
Collapse
H01L 21/28158
. . . . . . .
{
Making the insulator
}
Collapse
H01L 21/28167
. . . . . . . .
{
on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
}
H01L 21/28176
. . . . . . . . .
{
with a treatment, e.g. annealing, after the formation of the definitive gate conductor
}
H01L 21/28185
. . . . . . . . .
{
with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
}
H01L 21/28194
. . . . . . . . .
{
by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition (H01L 21/28202 takes precedence)
}
H01L 21/28202
. . . . . . . . .
{
in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
}
H01L 21/28211
. . . . . . . . .
{
in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer (H01L 21/28194 and H01L 21/28202 take precedence)
}
{
Note: thin oxidation layers used as a barrier layer or as a buffer layer, e.g. before the fomation of a high-k insulator, are classified here only if important per se
}
H01L 21/2822
. . . . . . . .
{
with substrate doping, e.g. N, Ge, C implantation, before formation of the insulator
}
H01L 21/28229
. . . . . . . .
{
by deposition of a layer, e.g. metal, metal compound or poysilicon, followed by transformation thereof into an insulating layer
}
H01L 21/28238
. . . . . . . .
{
with sacrificial oxide
}
H01L 21/28247
. . . . . . .
{
passivation or protection of the electrode, e.g. using re-oxidation
}
H01L 21/28255
. . . . . .
{
the insulator being formed after the semiconductor body, the semiconductor belonging to the fourth group and not being elemental silicon, e.g. Ge, SiGe, SiGeC
}
H01L 21/28264
. . . . . .
{
the insulator being formed after the semiconductor body, the semiconductor being a III-V compound
}
H01L 21/28273
. . . . .
{
Making conductor-insulator-conductor-insulator-semiconductor electrodes (H01L 21/28291 takes precedence)
}
H01L 21/28282
. . . . .
{
comprising a charge trapping insulator
}
H01L 21/28291
. . . . .
{
comprising a layer which is used for its ferroelectric properties
}
Collapse
H01L 21/283
. . . . .
Deposition of conductive or insulating materials for electrodes
{
conducting electric current
}
Collapse
H01L 21/285
. . . . . .
from a gas or vapour, e.g. condensation
Collapse
H01L 21/28506
. . . . . . .
{
of conductive layers
}
Collapse
H01L 21/28512
. . . . . . . .
{
on semiconductor bodies comprising elements of the fourth group of the Periodic System
}
H01L 21/28518
. . . . . . . . .
{
the conductive layers comprising silicides (H01L 21/28537 takes precedence)
}
Collapse
H01L 21/28525
. . . . . . . . .
{
the conductive layers comprising semiconducting material (H01L 21/28518, H01L 21/28537 take precedence)
}
H01L 21/28531
. . . . . . . . . .
{
Making of side-wall contacts
}
H01L 21/28537
. . . . . . . . .
{
Deposition of Schottky electrodes
}
H01L 21/2855
. . . . . . . . .
{
by physical means, e.g. sputtering, evaporation (H01L 21/28518 to H01L 21/28537 and H01L 21/28568 take precedence)
}
Collapse
H01L 21/28556
. . . . . . . . .
{
by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD (H01L 21/28518 to H01L 21/28537 and H01L 21/28568 take precedence)
}
H01L 21/28562
. . . . . . . . . .
{
Selective deposition
}
H01L 21/28568
. . . . . . . . .
{
the conductive layers comprising transition metals (H01L 21/28518 takes precedence)
}
Collapse
H01L 21/28575
. . . . . . . .
{
on semiconductor bodies comprising AIIIBV compounds
}
H01L 21/28581
. . . . . . . . .
{
Deposition of Schottky electrodes
}
Collapse
H01L 21/28587
. . . . . . . . .
{
characterised by the sectional shape, e.g. T, inverted T
}
H01L 21/28593
. . . . . . . . . .
{
asymmetrical sectional shape
}
Collapse
H01L 21/288
. . . . . .
from a liquid, e.g. electrolytic deposition
H01L 21/2885
. . . . . . .
{
using an external electrical current, i.e. electro-deposition
}
Collapse
H01L 21/30
. . . .
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L 21/20 to H01L 21/26 (manufacture of electrodes thereon H01L 21/28)
Collapse
H01L 21/3003
. . . . .
{
Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
}
H01L 21/3006
. . . . . .
{
of AIIIBV compounds
}
Collapse
H01L 21/302
. . . . .
to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Collapse
H01L 21/304
. . . . . .
Mechanical treatment, e.g. grinding, polishing, cutting
{
(H01L 21/30625 takes precedence)
}
H01L 21/3043
. . . . . . .
{
Making grooves, e.g. cutting
}
H01L 21/3046
. . . . . . .
{
using blasting, e.g. sand-blasting (H01L 21/2633 takes precedence)
}
Collapse
H01L 21/306
. . . . . .
Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L 21/31)
Collapse
H01L 21/30604
. . . . . . .
{
Chemical etching
}
H01L 21/30608
. . . . . . . .
{
Anisotropic liquid etching (H01L 21/3063 takes precedence)
}
Collapse
H01L 21/30612
. . . . . . . .
{
Etching of AIIIBV compounds
}
H01L 21/30617
. . . . . . . . .
{
Anisotropic liquid etching
}
H01L 21/30621
. . . . . . . . .
{
Vapour phase etching
}
H01L 21/30625
. . . . . . .
{
With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
}
Collapse
H01L 21/3063
. . . . . . .
Electrolytic etching
H01L 21/30635
. . . . . . . .
{
of A three - B five compounds
}
Collapse
H01L 21/3065
. . . . . . .
Plasma etching; Reactive-ion etching
H01L 21/30655
. . . . . . . .
{
comprising alternated and repeated etching and passivation steps, e.g. Bosch process
}
Collapse
H01L 21/308
. . . . . . .
using masks (H01L 21/3063, H01L 21/3065 take precedence)
H01L 21/3081
. . . . . . . .
{
characterised by their composition, e.g. multilayer masks, materials
}
Collapse
H01L 21/3083
. . . . . . . .
{
characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
}
H01L 21/3085
. . . . . . . . .
{
characterised by their behaviour during the process, e.g. soluble masks, redeposited masks
}
H01L 21/3086
. . . . . . . . .
{
characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
}
H01L 21/3088
. . . . . . . . .
{
Process specially adapted to improve the resolution of the mask
}
Collapse
H01L 21/31
. . . . .
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (layers forming electrodes H01L 21/28; encapsulating layers H01L 21/56); After treatment of these layers
Collapse
H01L 21/3105
. . . . . .
After-treatment
Collapse
H01L 21/31051
. . . . . . .
{
Planarisation of the insulating layers (H01L 21/31058 takes precedence)
}
Collapse
H01L 21/31053
. . . . . . . .
{
involving a dielectric removal step
}
Collapse
H01L 21/31055
. . . . . . . . .
{
the removal being a chemical etching step, e.g. dry etching (etching per se H01L 21/311)
}
H01L 21/31056
. . . . . . . . . .
{
the removal being a selective chemical etching step, e.g. selective dry etching through a mask
}
H01L 21/31058
. . . . . . .
{
of organic layers
}
Collapse
H01L 21/311
. . . . . . .
Etching the insulating layers
{
by chemical or physical means (H01L 21/31058 takes precedence)
}
Collapse
H01L 21/31105
. . . . . . . .
{
Etching inorganic layers
}
Collapse
H01L 21/31111
. . . . . . . . .
{
by chemical means
}
Collapse
H01L 21/31116
. . . . . . . . . .
{
by dry-etching
}
H01L 21/31122
. . . . . . . . . . .
{
of layers not containing Si, e.g. PZT, Al2O3
}
Collapse
H01L 21/31127
. . . . . . . .
{
Etching organic layers
}
Collapse
H01L 21/31133
. . . . . . . . .
{
by chemical means
}
H01L 21/31138
. . . . . . . . . .
{
by dry-etching
}
H01L 21/31144
. . . . . . . .
{
using masks
}
Collapse
H01L 21/3115
. . . . . . .
Doping the insulating layers
H01L 21/31155
. . . . . . . .
{
by ion implantation
}
Collapse
H01L 21/312
. . . . . .
Organic layers, e.g. photoresist (H01L 21/3105, H01L 21/32 take precedence;
{
photoresists per se G03C
}
)
WARNING
-
This group and subgroups are no longer used for the classification of new documents as from Mai 1, 2011. The backlog of this group is being continuously reclassified to H01L 21/02107 and subgroups thereof

Collapse
H01L 21/3121
. . . . . . .
{
Layers comprising organo-silicon compounds
}
Collapse
H01L 21/3122
. . . . . . . .
{
layers comprising polysiloxane compounds
}
H01L 21/3124
. . . . . . . . .
{
layers comprising hydrogen silsesquioxane
}
H01L 21/3125
. . . . . . . .
{
layers comprising silazane compounds
}
H01L 21/3127
. . . . . . .
{
Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
}
H01L 21/3128
. . . . . . .
{
by Langmuir-Blodgett techniques
}
Collapse
H01L 21/314
. . . . . .
Inorganic layers (H01L 21/3105, H01L 21/32 take precedence)
WARNING
-
This group and subgroups are no longer used for the classification of new documents as from Mai 1, 2011. The backlog of this group is being continuously reclassified to H01L 21/02107 and subgroups thereof

Collapse
H01L 21/3141
. . . . . . .
{
Deposition using atomic layer deposition techniques (ALD)
}
H01L 21/3142
. . . . . . . .
{
of nano-laminates, e.g. alternating layers of Al203-Hf02
}
Collapse
H01L 21/3143
. . . . . . .
{
composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
}
H01L 21/3144
. . . . . . . .
{
on silicon
}
H01L 21/3145
. . . . . . . .
{
formed by deposition from a gas or vapour
}
H01L 21/3146
. . . . . . .
{
Carbon layers, e.g. diamond-like layers
}
H01L 21/3147
. . . . . . .
{
Epitaxial deposition of insulating materials
}
H01L 21/3148
. . . . . . .
{
Silicon Carbide layers
}
Collapse
H01L 21/316
. . . . . . .
composed of oxides or glassy oxides or oxide based glass
WARNING
-
This group and subgroups are no longer used for the classification of new documents as from Mai 1, 2011. The backlog of this group is being continuously reclassified to H01L 21/02107 and subgroups thereof

Collapse
H01L 21/31604
. . . . . . . .
{
Deposition from a gas or vapour (H01L 21/31691, H01L 21/31695 take precedence)
}
Collapse
H01L 21/31608
. . . . . . . . .
{
Deposition of SiO2 (H01L 21/31625, H01L 21/31629 and H01L 21/31633 take precedence)
}
H01L 21/31612
. . . . . . . . . .
{
on a silicon body
}
Collapse
H01L 21/31616
. . . . . . . . .
{
Deposition of Al2O3
}
H01L 21/3162
. . . . . . . . . .
{
on a silicon body
}
H01L 21/31625
. . . . . . . . .
{
Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
}
H01L 21/31629
. . . . . . . . .
{
Deposition of halogen doped silicon oxide, e.g. fluorine doped silicon oxide
}
H01L 21/31633
. . . . . . . . .
{
Deposition of carbon doped silicon oxide, e.g. SiOC
}
H01L 21/31637
. . . . . . . . .
{
Deposition of Tantalum oxides, e.g. Ta2O5
}
H01L 21/31641
. . . . . . . . .
{
Deposition of Zirconium oxides, e.g. ZrO2
}
H01L 21/31645
. . . . . . . . .
{
Deposition of Hafnium oxides, e.g. HfO2
}
Collapse
H01L 21/3165
. . . . . . . .
{
formed by oxidation (H01L 21/31691, H01L 21/31695 take precedence)
}
Collapse
H01L 21/31654
. . . . . . . . .
{
of semiconductor materials, e.g. the body itself
}
Collapse
H01L 21/31658
. . . . . . . . . .
{
by thermal oxidation, e.g. of SiGe
}
H01L 21/31662
. . . . . . . . . . .
{
of silicon in uncombined form
}
H01L 21/31666
. . . . . . . . . . .
{
of AIII BV compounds
}
Collapse
H01L 21/3167
. . . . . . . . . .
{
of anodic oxidation
}
H01L 21/31675
. . . . . . . . . . .
{
of silicon
}
H01L 21/31679
. . . . . . . . . . .
{
of AIII BV compounds
}
Collapse
H01L 21/31683
. . . . . . . . .
{
of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
}
H01L 21/31687
. . . . . . . . . .
{
by anodic oxidation
}
H01L 21/31691
. . . . . . . .
{
with perovskite structure
}
H01L 21/31695
. . . . . . . .
{
Deposition of porous oxides or porous glassy oxides or oxide based porous glass
}
Collapse
H01L 21/318
. . . . . . .
composed of nitrides
WARNING
-
This group and subgroups are no longer used for the classification of new documents as from Mai 1, 2011. The backlog of this group is being continuously reclassified to H01L 21/02107 and subgroups thereof

H01L 21/3185
. . . . . . . .
{
of siliconnitrides
}
H01L 21/32
. . . . . .
using masks
Collapse
H01L 21/3205
. . . . . .
Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers (manufacture of electrodes H01L 21/28)
Collapse
H01L 21/32051
. . . . . . .
{
Deposition of metallic or metal-silicide layers
}
H01L 21/32053
. . . . . . . .
{
of metal-silicide layers
}
H01L 21/32055
. . . . . . .
{
Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
}
H01L 21/32056
. . . . . . .
{
Deposition of conductive or semi-conductive organic layers (H01L 21/32058 takes precedence)
}
H01L 21/32058
. . . . . . .
{
Deposition of supra-conductive layers
}
Collapse
H01L 21/321
. . . . . . .
After treatment
H01L 21/32105
. . . . . . . .
{
Oxidation of silicon-containing layers
}
H01L 21/3211
. . . . . . . .
{
Nitridation of silicon-containing layers
}
Collapse
H01L 21/32115
. . . . . . . .
{
Planarisation
}
Collapse
H01L 21/3212
. . . . . . . . .
{
by chemical mechanical polishing (CMP)
}
H01L 21/32125
. . . . . . . . . .
{
by simultaneously passing an electrical current, i.e. electrochemical mechanical polishing, e.g. ECMP
}
Collapse
H01L 21/3213
. . . . . . . .
Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
Collapse
H01L 21/32131
. . . . . . . . .
{
by physical means only
}
H01L 21/32132
. . . . . . . . . .
{
of silicon-containing layers
}
Collapse
H01L 21/32133
. . . . . . . . .
{
by chemical means only
}
H01L 21/32134
. . . . . . . . . .
{
by liquid etching only
}
Collapse
H01L 21/32135
. . . . . . . . . .
{
by vapour etching only
}
Collapse
H01L 21/32136
. . . . . . . . . . .
{
using plasmas
}
H01L 21/32137
. . . . . . . . . . . .
{
of silicon-containing layers
}
H01L 21/32138
. . . . . . . . . . .
{
pre- or post-treatments, e.g. anti-corrosion processes
}
H01L 21/32139
. . . . . . . . .
{
using masks
}
Collapse
H01L 21/3215
. . . . . . . .
Doping the layers
H01L 21/32155
. . . . . . . . .
{
Doping polycristalline - or amorphous silicon layers
}
Collapse
H01L 21/322
. . . . .
to modify their internal properties, e.g. to produce internal imperfections
Collapse
H01L 21/3221
. . . . . .
{
of silicon bodies, e.g. for gettering
}
H01L 21/3223
. . . . . . .
{
using cavities formed by hydrogen or noble gas ion implantation
}
H01L 21/3225
. . . . . . .
{
Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering (H01L 21/3226 takes precedence)
}
NOTE
-
Gettering using both extrinsic and intrinsic gettering techniques is classified in both H01L 21/3221 and H01L 21/3225

H01L 21/3226
. . . . . . .
{
of silicon on insulator
}
H01L 21/3228
. . . . . .
{
of AIIIBV compounds, e.g. to make them semi-insulating
}
Collapse
H01L 21/324
. . . . .
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L 21/20 to H01L 21/288 and H01L 21/302 to H01L 21/322 take precedence)
H01L 21/3242
. . . . . .
{
for the formation of PN junctions without addition of impurities (H01L 21/22 takes precedence)
}
H01L 21/3245
. . . . . .
{
of III-V compounds
}
H01L 21/3247
. . . . . .
{
for altering the shape, e.g. smoothing the surface
}
{
Warning: Not complete, see provisionally also H01L 21/324
}
H01L 21/326
. . . . .
Application of electric currents or fields, e.g. for electroforming (H01L 21/20 to H01L 21/288 and H01L 21/302 to H01L 21/324 take precedence)
Collapse
H01L 21/34
. . .
the devices having semiconductor bodies not provided for in groups
{
H01L 21/0405, H01L 21/0445
}
, H01L 21/06, H01L 21/16 and H01L 21/18 with or without impurities, e.g. doping materials
Collapse
H01L 21/36
. . . .
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
WARNING
-
This group is no longer used for the classification of new documents as from December 1, 2009. The backlog of this group is being continuously reclassified to H01L 21/02365 and subgroups

H01L 21/363
. . . . .
using physical deposition, e.g. vacuum deposition, sputtering
H01L 21/365
. . . . .
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/368
. . . . .
using liquid deposition
Collapse
H01L 21/38
. . . .
Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
H01L 21/383
. . . . .
using diffusion into or out of a solid from or into a gaseous phase
H01L 21/385
. . . . .
using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
H01L 21/388
. . . . .
using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
H01L 21/40
. . . .
Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Collapse
H01L 21/42
. . . .
Bombardment with radiation
Collapse
H01L 21/423
. . . . .
with high-energy radiation
Collapse
H01L 21/425
. . . . . .
producing ion implantation (ion beam tubes for localized treatment H01J 37/30)
H01L 21/426
. . . . . . .
using masks
H01L 21/428
. . . . . .
using electromagnetic radiation, e.g. laser radiation
Collapse
H01L 21/44
. . . .
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L 21/36 to H01L 21/428
Collapse
H01L 21/441
. . . . .
Deposition of conductive or insulating materials for electrodes
H01L 21/443
. . . . . .
from a gas or vapour, e.g. condensation
H01L 21/445
. . . . . .
from a liquid, e.g. electrolytic deposition
H01L 21/447
. . . . .
involving the application of pressure, e.g. thermo-compression bonding
H01L 21/449
. . . . .
involving the application of mechanical vibrations, e.g. ultrasonic vibrations
Collapse
H01L 21/46
. . . .
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L 21/428 (manufacture of electrodes thereon H01L 21/44)
Collapse
H01L 21/461
. . . . .
to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
H01L 21/463
. . . . . .
Mechanical treatment, e.g. grinding, ultrasonic treatment
Collapse
H01L 21/465
. . . . . .
Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers H01L 21/469)
H01L 21/467
. . . . . . .
using masks
Collapse
H01L 21/469
. . . . . .
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques (layers forming electrodes H01L 21/44; encapsulating layers H01L 21/56); After-treatment of these layers
H01L 21/47
. . . . . . .
organic layers, e.g. photoresist (H01L 21/475, H01L 21/4757 take precedence)
Collapse
H01L 21/471
. . . . . . .
Inorganic layers (H01L 21/475, H01L 21/4757 take precedence)
H01L 21/473
. . . . . . . .
composed of oxides or glassy oxides or oxide based glass
H01L 21/475
. . . . . . .
using masks
Collapse
H01L 21/4757
. . . . . . .
After-treatment
H01L 21/47573
. . . . . . . .
{
Etching the layer
}
H01L 21/47576
. . . . . . . .
{
Doping the layer
}
Collapse
H01L 21/4763
. . . . . .
Deposition of non-insulating, e.g. conductive -, resistive -, layers on insulating layers; After-treatment of these layers (manufacture of electrodes H01L 21/28,
{
H01L 21/44
}
)
H01L 21/47635
. . . . . . .
{
After-treatment of these layers
}
H01L 21/477
. . . . .
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering (H01L 21/36 to H01L 21/449 and H01L 21/461 to H01L 21/475 take precedence)
H01L 21/479
. . . . .
Application of electric currents or fields, e.g. for electroforming (H01L 21/36 to H01L 21/449 and H01L 21/461 to H01L 21/477 take precedence)
Collapse
H01L 21/48
. . .
Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L 21/06 to H01L 21/326 (
{
apparatus therefor H01L 21/67005; insulative sealing of leads in bases H01L 21/50
}
; containers, encapsulations, fillings, mountings per se H01L 23/00;
{
marking of parts H01L 23/544
}
)
NOTE
-
In this group, the expression "treatment" covers also the removal of leads from parts

Collapse
H01L 21/4803
. . . .
{
Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks (H01L 21/4846 takes precedence; printed circuit boards H05K 1/00)
}
H01L 21/4807
. . . . .
{
Ceramic parts
}
H01L 21/481
. . . . .
{
Insulating layers on insulating parts, with or without metallisation
}
Collapse
H01L 21/4814
. . . .
{
Conductive parts
}
H01L 21/4817
. . . . .
{
for containers, e.g. caps (H01L 21/4871 takes precedence)
}
Collapse
H01L 21/4821
. . . . .
{
Flat leads, e.g. lead frames with or without insulating supports
}
H01L 21/4825
. . . . . .
{
Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
}
Collapse
H01L 21/4828
. . . . . .
{
Etching (etching for cleaning without patterning H01L 21/4835)
}
H01L 21/4832
. . . . . . .
{
Etching a temporary substrate after encapsulation process to form leads
}
H01L 21/4835
. . . . . .
{
Cleaning, e.g. removing of solder
}
H01L 21/4839
. . . . . .
{
Assembly of a flat lead with an insulating support, e.g. for TAB
}
H01L 21/4842
. . . . . .
{
Mechanical treatment, e.g. punching, cutting, deforming, cold welding
}
Collapse
H01L 21/4846
. . . . .
{
Leads on or in insulating or insulated substrates, e.g. metallisation (H01L 21/4821 takes precedence; metallisation of ceramics in general C04B 41/51; printed circuits H05K 3/00)
}
H01L 21/485
. . . . . .
{
Adaptation of interconnections, e.g. engineering charges, repair techniques
}
H01L 21/4853
. . . . . .
{
Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
}
H01L 21/4857
. . . . . .
{
Multilayer substrates (multilayer metallisation on monolayer substrate H01L 21/4846)
}
H01L 21/486
. . . . . .
{
Via connections through the substrate with or without pins
}
H01L 21/4864
. . . . . .
{
Cleaning, e.g. removing of solder
}
H01L 21/4867
. . . . . .
{
Applying pastes or inks, e.g. screen printing (H01L 21/486 takes precedence)
}
Collapse
H01L 21/4871
. . . . .
{
Bases, plates or heatsinks
}
H01L 21/4875
. . . . . .
{
Connection or disconnection of other leads to or from bases or plates
}
H01L 21/4878
. . . . . .
{
Mechanical treatment, e.g. deforming
}
H01L 21/4882
. . . . . .
{
Assembly of heatsink parts
}
Collapse
H01L 21/4885
. . . . .
{
Wire-like parts or pins (wire ball formation B23K 20/00; methods related to connecting semiconductor or other solid state bodies H01L 24/00)
}
WARNING
-
The documents of this group and subgroups dealing with methods for connecting semiconductor or other solid state bodies are being continuously reclassified to H01L 24/43

H01L 21/4889
. . . . . .
{
Connection or disconnection of other leads to or from wire-like parts, e.g. wires
}
H01L 21/4892
. . . . . .
{
Cleaning
}
H01L 21/4896
. . . . . .
{
Mechanical treatment, e.g. cutting, bending
}
Collapse
H01L 21/50
. . .
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L 21/06 to H01L 21/326,
{
e.g. sealing of a cap to a base of a container
}
NOTE
-
Arrangements for connecting or disconnecting semiconductor or other solid state bodies, or methods related thereto, other than those arrangements or methods covered by the following subgroups, are covered by H01L 24/00

H01L 21/52
. . . .
Mounting semiconductor bodies in containers
H01L 21/54
. . . .
Providing fillings in containers, e.g. gas fillings
Collapse
H01L 21/56
. . . .
Encapsulations, e.g. encapsulation layers, coatings
H01L 21/561
. . . . .
{
Batch processing
}
H01L 21/563
. . . . .
{
Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
}
Collapse
H01L 21/565
. . . . .
{
Moulds
}
H01L 21/566
. . . . . .
{
Release layers for moulds, e.g. release layers, layers against residue during moulding
}
H01L 21/568
. . . . .
{
Temporary substrate used as encapsulation process aid (H01L 21/4832 and H01L 21/566 take precedence)
}
H01L 21/58
. . . .
{
Insulative
}
 mounting semiconductor devices on supports
{
(H01L 21/563, H01L 23/49513 take precedence)
}
WARNING
-
This group is no longer used for the classification of new documents as from June 1, 2010. The backlog of this group is being continuously reclassified to H01L 24/80 and subgroups

H01L 21/62
. .
the devices having no potential-jump barriers or surface barriers
H01L 21/64
.
Manufacture or treatment of solid state devices other than semiconductor devices, or of parts thereof, not peculiar to a single device provided for in groups H01L 31/00 to H01L 51/00
Collapse
H01L 21/67
.
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components;
{
Apparatus not specifically provided for elsewhere (processes per se H01L 21/30, H01L 21/46, H01L 23/00; simple temporary support means, e.g. using adhesives, electric or magnetic means H01L 21/68, H01L 21/302; apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto H01L 24/74;)
}
NOTE
-
In this subgroup the term substrate designates a semiconductor or electric solid state device or component, or a wafer

Collapse
H01L 21/67005
. .
{
Apparatus not specifically provided for elsewhere (processes per se H01L 21/30, H01L 21/46, H01L 23/00; simple temporary support means, e.g. using adhesives, electric or magnetic means H01L 21/68, H01L 21/302)
}
Collapse
H01L 21/67011
. . .
{
Apparatus for manufacture or treatment (processes H01L 21/30, H01L 21/46; for production or after-treatment of single crystals or homogeneous polycrystalline material C30B 35/00)
}
Collapse
H01L 21/67017
. . . .
{
Apparatus for fluid treatment (H01L 21/67126, H01L 21/6715 take precedence)
}
H01L 21/67023
. . . . .
{
for general liquid treatment, e.g. etching followed by cleaning
}
Collapse
H01L 21/67028
. . . . .
{
for cleaning followed by drying, rinsing, stripping, blasting or the like
}
H01L 21/67034
. . . . . .
{
for drying
}
Collapse
H01L 21/6704
. . . . . .
{
for wet cleaning or washing
}
H01L 21/67046
. . . . . . .
{
using mainly scrubbing means, e.g. brushes
}
H01L 21/67051
. . . . . . .
{
using mainly spraying means, e.g. nozzles
}
H01L 21/67057
. . . . . . .
{
with the semiconductor substrates being dipped in baths or vessels
}
Collapse
H01L 21/67063
. . . . .
{
for etching
}
H01L 21/67069
. . . . . .
{
for drying etching
}
Collapse
H01L 21/67075
. . . . . .
{
for wet etching
}
H01L 21/6708
. . . . . . .
{
using mainly spraying means, e.g. nozzles
}
H01L 21/67086
. . . . . . .
{
with the semiconductor substrates being dipped in baths or vessels
}
H01L 21/67092
. . . .
{
Apparatus for mechanical treatment (or grinding or cutting, see the relevant groups in subclasses B24B or B28D)
}
Collapse
H01L 21/67098
. . . .
{
Apparatus for thermal treatment
}
H01L 21/67103
. . . . .
{
mainly by conduction
}
H01L 21/67109
. . . . .
{
mainly by convection
}
H01L 21/67115
. . . . .
{
mainly by radiation
}
H01L 21/67121
. . . .
{
Apparatus for making assemblies not otherwise provided for, e.g. package constructions
}
H01L 21/67126
. . . .
{
Apparatus for sealing, encapsulating, glassing, decapsulating or the like (processes H01L 23/02, H01L 23/28)
}
H01L 21/67132
. . . .
{
Apparatus for placing on an insulating substrate, e.g. tape
}
H01L 21/67138
. . . .
{
Apparatus for wiring semiconductor or solid state device
}
H01L 21/67144
. . . .
{
Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
}
H01L 21/6715
. . . .
{
Apparatus for applying a liquid, a resin, an ink or the like (H01L 21/67126 takes precedence)
}
Collapse
H01L 21/67155
. . . .
{
Apparatus for manufacturing or treating in a plurality of work-stations
}
Collapse
H01L 21/67161
. . . . .
{
characterized by the layout of the process chambers
}
H01L 21/67167
. . . . . .
{
surrounding a central transfer chamber
}
H01L 21/67173
. . . . . .
{
in-line arrangement
}
H01L 21/67178
. . . . . .
{
vertical arrangement
}
H01L 21/67184
. . . . .
{
characterized by the presence of more than one transfer chamber
}
H01L 21/6719
. . . . .
{
characterized by the construction of the processing chambers, e.g. modular processing chambers
}
H01L 21/67196
. . . . .
{
characterized by the construction of the transfer chamber
}
H01L 21/67201
. . . . .
{
characterized by the construction of the load-lock chamber
}
Collapse
H01L 21/67207
. . . . .
{
comprising a chamber adapted to a particular process
}
H01L 21/67213
. . . . . .
{
comprising at least one ion or electron beam chamber (coating by ion implantation C23C; ion or electron beam tubes H01J 37/00)
}
H01L 21/67219
. . . . . .
{
comprising at least one polishing chamber (polishing apparatuses B24B)
}
H01L 21/67225
. . . . . .
{
comprising at least one lithography chamber (lithographic apparatuses G03F 7/00)
}
H01L 21/6723
. . . . . .
{
comprising at least one plating chamber (electroless plating apparatuses C23C, electroplating apparatuses C25D)
}
H01L 21/67236
. . . . .
{
the substrates being processed being not semiconductor wafers, e.g. leadframes or chips
}
Collapse
H01L 21/67242
. . .
{
Apparatus for monitoring, sorting or marking (testing or measuring during manufacture H01L 22/00, marks per se H01L 23/544; testing individual semiconductor devices G01R 31/26)
}
H01L 21/67248
. . . .
{
Temperature monitoring
}
H01L 21/67253
. . . .
{
Process monitoring, e.g. flow or thickness monitoring
}
Collapse
H01L 21/67259
. . . .
{
Position monitoring, e.g. misposition detection or presence detection
}
H01L 21/67265
. . . . .
{
of substrates stored in a container, a magazine, a carrier, a boat or the like
}
H01L 21/67271
. . . .
{
Sorting devices
}
H01L 21/67276
. . . .
{
Production flow monitoring, e.g. for increasing throughput (program-control systems per se G05B 19/00, e.g. total factory control G05B 19/418)
}
H01L 21/67282
. . . .
{
Marking devices
}
H01L 21/67288
. . . .
{
Monitoring of warpage, curvature, damage, defects or the like
}
H01L 21/67294
. . . .
{
using identification means, e.g. labels on substrates or labels on containers
}
Collapse
H01L 21/673
. .
using specially adapted carriers
{
or holders; Fixing the workpieces on such carriers or holders (holders for supporting a complete device in operation H01L 23/32)
}
Collapse
H01L 21/67303
. . .
{
Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
}
H01L 21/67306
. . . .
{
characterized by a material, a roughness, a coating or the like
}
H01L 21/67309
. . . .
{
characterized by the substrate support
}
Collapse
H01L 21/67313
. . .
{
Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
}
H01L 21/67316
. . . .
[N: characterized by a material, a roughness, a coating or the like
Collapse
H01L 21/6732
. . .
{
Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls
}
H01L 21/67323
. . . .
{
characterized by a material, a roughness, a coating or the like
}
Collapse
H01L 21/67326
. . .
{
Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls
}
H01L 21/6733
. . . .
{
characterized by a material, a roughness, a coating or the like
}
Collapse
H01L 21/67333
. . .
{
Trays for chips (magazine for components H05K 13/0084)
}
H01L 21/67336
. . . .
{
characterized by a material, a roughness, a coating or the like
}
Collapse
H01L 21/6734
. . .
{
specially adapted for supporting large square shaped substrates (containers and packaging elements for glass sheets B65D 85/48, transporting of glass products during their manufacture C03B 35/00)
}
H01L 21/67343
. . . .
{
characterized by a material, a roughness, a coating or the like
}
H01L 21/67346
. . .
{
characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
}
Collapse
H01L 21/6735
. . .
{
Closed carriers
}
H01L 21/67353
. . . .
{
specially adapted for a single substrate
}
H01L 21/67356
. . . .
{
specially adapted for containing chips, dies or ICs
}
H01L 21/67359
. . . .
{
specially adapted for containing masks, reticles or pellicles
}
H01L 21/67363
. . . .
{
specially adapted for containing substrates other than wafers (H01L 21/67356, H01L 21/67359 take precedence)
}
H01L 21/67366
. . . .
{
characterised by materials, roughness, coatings or the like (materials relating to an injection moulding process B29C 45/00; chemical composition of materials C08L 51/00)
}
H01L 21/67369
. . . .
{
characterised by shock absorbing elements, e.g. retainers or cushions
}
H01L 21/67373
. . . .
{
characterised by locking systems
}
H01L 21/67376
. . . .
{
characterised by sealing arrangements
}
H01L 21/67379
. . . .
{
characterised by coupling elements, kinematic members, handles or elements to be externally gripped
}
H01L 21/67383
. . . .
{
characterised by substrate supports
}
H01L 21/67386
. . . .
{
characterised by the construction of the closed carrier
}
Collapse
H01L 21/67389
. . . .
{
characterised by atmosphere control
}
H01L 21/67393
. . . . .
{
characterised by the presence of atmosphere modifying elements inside or attached to the closed carrierl
}
H01L 21/67396
. . . .
{
characterised by the presence of antistatic elements
}
Collapse
H01L 21/677
. .
for conveying, e.g. between different workstations
Collapse
H01L 21/67703
. . .
{
between different workstations
}
WARNING
-
This group and subgroups are not complete pending completion of reorganization; see also H01L 21/677

H01L 21/67706
. . . .
{
Mechanical details, e.g. roller, belt (H01L 21/67709 takes precedence)
}
H01L 21/67709
. . . .
{
using magnetic elements
}
H01L 21/67712
. . . .
{
the substrate being handled substantially vertically
}
H01L 21/67715
. . . .
{
Changing the direction of the conveying path
}
H01L 21/67718
. . . .
{
Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
}
H01L 21/67721
. . . .
{
the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames, H01L 21/6773 takes precedence
}
H01L 21/67724
. . . .
{
by means of a cart or a vehicule
}
H01L 21/67727
. . . .
{
using a general scheme of a conveying path within a factory
}
H01L 21/6773
. . . .
{
Conveying cassettes, containers or carriers
}
H01L 21/67733
. . . .
{
Overhead conveying
}
H01L 21/67736
. . . .
{
Loading to or unloading from a conveyor
}
Collapse
H01L 21/67739
. . .
{
into and out of processing chamber
}
H01L 21/67742
. . . .
{
Mechanical parts of transfer devices (robots in general in B25J)
}
H01L 21/67745
. . . .
{
characterized by movements or sequence of movements of transfer devices
}
H01L 21/67748
. . . .
{
horizontal transfer of a single workpiece
}
H01L 21/67751
. . . .
{
vertical transfer of a single workpiece
}
H01L 21/67754
. . . .
{
horizontal transfer of a batch of workpieces
}
H01L 21/67757
. . . .
{
vertical transfer of a batch of workpieces
}
H01L 21/6776
. . . .
{
Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
}
WARNING
-
Not complete pending completion of reorganization; see also H01L 21/677

Collapse
H01L 21/67763
. . .
{
the wafers being stored in a carrier, involving loading and unloading (H01L 21/6779 takes precedence)
}
H01L 21/67766
. . . .
{
Mechanical parts of transfer devices (robots in general in B25J)
}
H01L 21/67769
. . . .
{
Storage means
}
H01L 21/67772
. . . .
{
involving removal of lid, door, cover
}
H01L 21/67775
. . . .
{
Docking arrangements
}
Collapse
H01L 21/67778
. . . .
{
involving loading and unloading of waers
}
H01L 21/67781
. . . . .
{
Batch transfer of wafers
}
Collapse
H01L 21/67784
. . .
{
using air tracks
}
H01L 21/67787
. . . .
{
with angular orientation of the workpieces
}
H01L 21/6779
. . . .
{
the workpieces being stored in a carrier, involving loading and unloading
}
H01L 21/67793
. . .
{
with orientating and positioning by means of a vibratory bowl or track
}
H01L 21/67796
. . .
{
with angular orientation of workpieces (H01L 21/67787 and H01L 21/67793 take precedence)
}
Collapse
H01L 21/68
. .
for positioning, orientation or alignment (for conveying H01L 21/677)
WARNING
-
This group is in reorganisation. See provisionally also group H01L 21/68T

H01L 21/681
. . .
{
using optical controlling means
}
H01L 21/682
. . .
{
Mask-wafer alignment (in general G03F7/20T, G03F9/00T)
}
Collapse
H01L 21/683
. .
for supporting or gripping (for conveying H01L 21/677, for positioning, orientation or alignment H01L 21/68)
Collapse
H01L 21/6831
. . .
{
using electrostatic chucks
}
H01L 21/6833
. . . .
{
Details of electrostatic chucks
}
Collapse
H01L 21/6835
. . .
{
using temporarily an auxiliary support
}
NOTE
-
H01L 21/6835, details of the apparatus are to be further indexed using the indexing codes chosen from H01L 2221/68304 and subgroups

H01L 21/6836
. . . .
{
Wafer tapes, e.g. grinding or dicing support tapes (adhesive tapes in general C09J 7/02)
}
H01L 21/6838
. . .
{
with gripping and holding devices using a vacuum; Bernoulli devices
}
Collapse
H01L 21/687
. . .
using mechanical means, e.g. chucks, clamps or pinches
{
(using elecrostatic chucks H01L 21/683C)
}
H01L 21/68707
. . . .
{
the wafers being placed on a robot blade, or gripped by a gripper for conveyance
}
Collapse
H01L 21/68714
. . . .
{
the wafers being placed on a susceptor, stage or support
}
H01L 21/68721
. . . . .
{
characterised by edge clamping, e.g. clamping ring
}
H01L 21/68728
. . . . .
{
characterised by a plurality of separate clamping members, e.g. clamping fingers
}
H01L 21/68735
. . . . .
{
characterised by edge profile or support profile
}
H01L 21/68742
. . . . .
{
characterised by a lifting arrangement, e.g. lift pins
}
H01L 21/6875
. . . . .
{
characterised by a plurality of individual support members, e.g. support posts or protrusions
}
H01L 21/68757
. . . . .
{
characterised by a coating or a hardness or a material
}
H01L 21/68764
. . . . .
{
characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
}
H01L 21/68771
. . . . .
{
characterised by supporting more than one semiconductor substrate
}
H01L 21/68778
. . . . .
{
characterised by supporting substrates others than wafers, e.g. chips
}
H01L 21/68785
. . . . .
{
characterised by the mechanical construction of the susceptor, stage or support
}
H01L 21/68792
. . . . .
{
characterised by the construction of the shaft
}
Collapse
H01L 21/70
.
Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof ; Manufacture of integrated circuit devices or of parts thereof (
{
multistep manufacturing processes of assemblies consisting of a plurality of individual semiconductor or other solid state devices H01L 25/00
}
, manufacture of assemblies consisting or preformed electrical components H05K 3/00, H05K 13/00)
Collapse
H01L 21/702
. .
{
of thick-or thin-film circuits or parts thereof
}
H01L 21/705
. . .
{
of thick-film circuits or parts thereof
}
H01L 21/707
. . .
{
of thin-film circuits or parts thereof
}
Collapse
H01L 21/71
. .
Manufacture of specific parts of devices defined in group H01L 21/70 (
{
H01L 21/0405, H01L 21/0445
}
, H01L 21/28, H01L 21/44, H01L 21/48 take precedence)
Collapse
H01L 21/74
. . .
Making of
{
localized
}
 buried regions, e.g. buried collector layers, internal connections
{
substrate contacts
}
H01L 21/743
. . . .
{
Making of internal connections, substrate contacts
}
H01L 21/746
. . . .
{
for AIII-BV integrated circuits
}
Collapse
H01L 21/76
. . .
Making of isolation regions between components
H01L 21/7602
. . . .
{
between components manufactured in an active substrate comprising SiC compounds
}
H01L 21/7605
. . . .
{
between components manufactured in an active substrate comprising AIII BV compounds
}
H01L 21/7607
. . . .
{
between components manufactured in an active substrate comprising II-VI compounds
}
H01L 21/761
. . . .
PN junctions
Collapse
H01L 21/762
. . . .
Dielectric regions,
{
e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
}
Collapse
H01L 21/76202
. . . . .
{
using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO (H01L 21/76235 takes precedence; together with vertical isolation, e.g. LOCOS in a SOI substrate, H01L 21/76264)
}
Collapse
H01L 21/76205
. . . . . .
{
in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
}
H01L 21/76208
. . . . . . .
{
using auxiliary pillars in the recessed region, e.g. to form LOCOS over extended areas
}
H01L 21/7621
. . . . . . .
{
the recessed region having a shape other than rectangular, e.g. rounded or oblique shape (H01L 21/76208 takes precedence)
}
Collapse
H01L 21/76213
. . . . . .
{
introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
}
Collapse
H01L 21/76216
. . . . . . .
{
introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
}
H01L 21/76218
. . . . . . . .
{
introducing both types of electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers, e.g. for isolation of complementary doped regions
}
H01L 21/76221
. . . . . .
{
with a plurality of successive local oxidation steps
}
Collapse
H01L 21/76224
. . . . .
{
using trench refilling with dielectric materials (trench filling with polycristalline siliconH01L 21/763; together with vertical isolation, e.g. trench refilling in a SOI substrateH01L 21/76264)
}
H01L 21/76227
. . . . . .
{
the dielectric materials being obtained by full chemical transformation of non-dielectric materials, such as polycristalline silicon, metals
}
H01L 21/76229
. . . . . .
{
Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
}
Collapse
H01L 21/76232
. . . . . .
{
of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls (H01L 21/76229 takes precedence)
}
H01L 21/76235
. . . . . . .
{
trench shape altered by a local oxidation of silicon process step, e.g. trench corner rounding by LOCOS
}
H01L 21/76237
. . . . . .
{
introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
}
Collapse
H01L 21/7624
. . . . .
{
using semiconductor on insulator (SOI) technology (H01L 21/76297 takes precedence; manufacture of integrated circuits on insulating substrates H01L 21/84; silicon on sapphire (SOS) technology H01L 21/86)
}
H01L 21/76243
. . . . . .
{
using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
}
H01L 21/76245
. . . . . .
{
using full isolation by porous oxide silicon, i.e. FIPOS techniques
}
H01L 21/76248
. . . . . .
{
using lateral overgrowth techniques, i.e. ELO techniques
}
Collapse
H01L 21/76251
. . . . . .
{
using bonding techniques
}
H01L 21/76254
. . . . . . .
{
with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
}
H01L 21/76256
. . . . . . .
{
using silicon etch back techniques, e.g. BESOI, ELTRAN
}
H01L 21/76259
. . . . . . .
{
with separation/delamination along a porous layer
}
H01L 21/76262
. . . . . .
{
using selective deposition of single crystal silicon, i.e. SEG techniques
}
Collapse
H01L 21/76264
. . . . . .
{
SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
}
H01L 21/76267
. . . . . . .
{
Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
}
H01L 21/7627
. . . . . . .
{
Vertical isolation by full isolation by porous oxide silicon, i.e. FIPOS techniques
}
H01L 21/76272
. . . . . . .
{
Vertical isolation by lateral overgrowth techniques, i.e. ELO techniques
}
H01L 21/76275
. . . . . . .
{
Vertical isolation by bonding techniques
}
H01L 21/76278
. . . . . . .
{
Vertical isolation by selective deposition of single crystal silicon, i.e. SEG techniques
}
H01L 21/76281
. . . . . . .
{
Lateral isolation by selective oxidation of silicon
}
H01L 21/76283
. . . . . . .
{
Lateral isolation by refilling of trenches with dielectric material
}
H01L 21/76286
. . . . . . .
{
Lateral isolation by refilling of trenches with polycristalline material
}
H01L 21/76289
. . . . . . .
{
Lateral isolation by air gap
}
H01L 21/76291
. . . . . . .
{
Lateral isolation by field effect
}
H01L 21/76294
. . . . .
{
using selective deposition of single crystal silicon, i.e. SEG techniques
}
H01L 21/76297
. . . . .
{
Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
}
H01L 21/763
. . . .
Polycristalline semiconductor regions
{
( H01L 21/76264 takes precedence)
}
H01L 21/764
. . . .
Air gaps
{
( H01L 21/76264 takes precedence)
}
H01L 21/765
. . . .
by field effect
{
( H01L 21/76264 takes precedence)
}
Collapse
H01L 21/768
. . .
Applying interconnections to be used for carrying current between separate components within a device
{
comprising conductors and dielectrics
}
NOTE
-
Groups H01L 21/768 to H01L 21/76898 cover multi-step processes for manufacturing interconnections.
Information peculiar to single-step processes should also be classified in the corresponding group, e.g.
- cleaning H01L 21/02F
- etching H01L 21/311, H01L 21/3213
- masking H01L 21/027, H01L 21/033, H01L 21/311D, H01L 21/3213D
- planarizing H01L 21/3105, H01L 21/321

Collapse
H01L 21/76801
. . . .
{
characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
}
Collapse
H01L 21/76802
. . . . .
{
by forming openings in dielectrics
}
H01L 21/76804
. . . . . .
{
by forming tapered via holes
}
H01L 21/76805
. . . . . .
{
the opening being a via or contact hole penetrating the underlying conductor
}
Collapse
H01L 21/76807
. . . . . .
{
for dual damascene structures
}
H01L 21/76808
. . . . . . .
{
involving intermediate temporary filling with material
}
H01L 21/7681
. . . . . . .
{
involving one or more buried masks
}
H01L 21/76811
. . . . . . .
{
involving multiple stacked pre-patterned masks
}
H01L 21/76813
. . . . . . .
{
involving a partial via etch
}
H01L 21/76814
. . . . . .
{
post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
}
WARNING
-
H01L 21/76814-H01L 21/76817 are not complete; see provisionally H01L 21/76802

H01L 21/76816
. . . . . .
üN: Aspects relating to the layout of the pattern or to the size of vias or trenches (layout of the interconnections per se H01L 23/528; CAD of ICs G06F 17/50)]
H01L 21/76817
. . . . . .
{
using printing or stamping techniques
}
H01L 21/76819
. . . . .
{
Smoothing of the dielectric (planarisation of insulating materials per se H01L 21/31051)
}

Next >>

This page is owned by Office of the Chief Communications Officer.
Last Modified: 11/26/2012 5:18:16 PM