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Outline
Indent Level
Color Curly Brackets (indicating CPC extensions to IPC) References Date Revised

CPC
COOPERATIVE PATENT CLASSIFICATION
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DEVICES USING STIMULATED EMISSION
NOTE
-
This subclass covers:
devices for the generation or amplification, by using stimulated emission, of coherent electromagnetic waves or other forms of wave energy;

such functions as modulating, demodulating, controlling, or stabilising such waves.


WARNING
-
The following IPC groups are not used in the CPC scheme.
Subject matter covered by these groups is classified in the following CPC groups:
- H01S3/098 covered by H01S 3/08018, H01S 3/11 and s.gr.

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Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of electromagnetic waves of wavelength longer than that of infra-red waves
H01S 1/005
.
{
using a relativistic beam of charged particles, e.g. electron cyclotron maser, gyrotron
}
H01S 1/02
.
solid
H01S 1/04
.
liquid
.
gaseous,
{
i.e. beam masers ( atomic clocks G04F 5/14 ; circuits using beam masers as a reference frequency for regulating frequency of oscillators H03L 7/26 ; molecular or atomic beam generation H05H 3/02 )
}
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Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves (
{
stimulated Brillouin or Raman effects H01S 3/30
}
; semiconductor lasers H01S 5/00 )
H01S 3/0007
.
{
Applications not otherwise provided for ( working metals or other materials by laser beam B23K 26/00 ; using photons to produce a reactive propulsive thrust F03H 3/00 ; optical recording of measured values in general G01D 15/14 ; optics in general G02B ; holographic processes or apparatus G03H ; optical marking or sensing of data record carriers G06K 7/10 to G06K 7/14 , G06K 15/12 ; injection heating of plasma by laser H05H 1/22 ; acceleration of neutral particles by electromagnetic wave pressure H05H 3/04 )
}
H01S 3/0014
.
{
Monitoring arrangements not otherwise provided for ( photometry G01J 1/00 , e.g. G01J 1/4257 ; radiation pyrometry G01J 5/00 ; measuring coherence of light G01J 9/00 ; measuring wavelength of light G01J 9/00 , e.g. G01J 9/0246 ; measuring optical pulses G01J 11/00 ; calorimetrically measuring power of laser beams G01K 17/003 )
}
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H01S 3/005
.
{
Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping ( shaping laser beam for working metal or other materials B23K 26/06 ; optical elements, systems or apparatus in general G02B )
}
H01S 3/0057
. .
{
Temporal shaping, e.g. pulse compression, frequency chirping ( soliton generation and propagation G02F 1/3513 , H01S 3/063 and H01S 3/108 )
}
H01S 3/0064
. .
{
Anti-reflection devices, e.g. optical isolaters ( absorbing layers for marking or protecting purposes in laser working B23K 26/0054 ; magneto-optical non-reciprocal devices G02F 1/093 , G02F 1/0955 )
}
H01S 3/0071
. .
{
Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction
}
H01S 3/0078
. .
{
Frequency filtering
}
H01S 3/0085
. .
{
Modulating the output, i.e. the laser beam is modulated outside the laser cavity
}
H01S 3/0092
. .
{
Nonlinear frequency conversion, e.g. second harmonic generation [SHG
}
or sum- or difference-frequency generation outside the laser cavity ( nonlinear frequency conversion per se G02F 1/35 ) ]
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.
Constructional details
{
( housings or packages of fibre lasers H01S 3/06704 )
}
H01S 3/022
. .
{
of liquid lasers
}
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H01S 3/025
. .
{
of solid state lasers, e.g. housings or mountings
}
H01S 3/027
. . .
{
comprising a special atmosphere inside the housing
}
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. .
of gas laser discharge tubes
{
( gas discharge tubes in general H01J 17/00 , H01J 61/00 )
}
H01S 3/0305
. . .
{
Selection of materials for the tube or the coatings thereon
}
H01S 3/031
. . .
{
Metal vapour lasers, e.g. metal vapour generation
}
H01S 3/0315
. . .
{
Waveguide lasers
}
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H01S 3/032
. . .
for confinement of the discharge, e.g. by special features of the discharge constricting tube
H01S 3/0323
. . . .
{
by special features of the discharge constricting tube, e.g. capillary
}
H01S 3/0326
. . . .
{
by an electromagnetic field
}
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. . .
Optical devices within, or forming part of, the tube, e.g. windows, mirrors ( reflectors having variable properties or position for initial adjustment of the resonator H01S 3/086 )
H01S 3/0343
. . . .
{
Aerodynamic windows
}
H01S 3/0346
. . . .
{
Protection of windows or mirrors against deleterious effects ( cooling arrangements H01S 3/0401 )
}
. . .
Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing ; Means for circulating the gas, e.g. for equalising the pressure within the tube (
{
H01S 3/031 takes precedence; cooling arrangements for gas lasers H01S 3/041 ; gas dynamic lasers H01S 3/0979 ; in general H01J 17/22 , H01J 61/24
}
)
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H01S 3/038
. . .
Electrodes, e.g. special shape, configuration or composition
H01S 3/0381
. . . .
{
Anodes or particular adaptations thereof
}
H01S 3/0382
. . . .
{
Cathodes or particular adaptations thereof
}
H01S 3/0384
. . . .
{
Auxiliary electrodes, e.g. for pre-ionisation or triggering, or particular adaptations therefor
}
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H01S 3/0385
. . . .
{
Shape
}
H01S 3/0387
. . . . .
{
Helical shape
}
H01S 3/0388
. . . .
{
Compositions, materials or coatings
}
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H01S 3/04
. .
Cooling arrangements
H01S 3/0401
. . .
{
of optical elements being part of laser resonator, e.g. windows, mirrors, lenses
}
H01S 3/0402
. . .
{
for liquid lasers
}
H01S 3/0404
. . .
{
Air- or gas cooling, e.g. by dry nitrogen
}
H01S 3/0405
. . .
{
Conductive cooling, e.g. by heat sinks or thermo-electric elements
}
H01S 3/0407
. . .
{
Liquid cooling, e.g. by water
}
H01S 3/0408
. . .
{
Radiative cooling, e.g. by anti-Stokes scattering in the active medium
}
H01S 3/041
. . .
for gas lasers
{
( H01S 3/0401 takes precedence )
}
H01S 3/042
. . .
for solid state lasers
{
( H01S 3/0401 takes precedence )
}
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H01S 3/05
.
Construction or shape of optical resonators ; Accomodation of active medium therein ; Shape of active medium
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H01S 3/06
. .
Construction or shape of active medium
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H01S 3/0602
. . .
{
Crystal lasers or glass lasers ( H01S 3/063 takes precedence )
}
H01S 3/0604
. . . .
{
in the form of a plate or disc
}
H01S 3/0606
. . . .
{
with polygonal cross-section, e.g. slab, prism ( H01S 3/0604 takes precedence )
}
H01S 3/0608
. . . .
{
Laser crystal with a hole, e.g. a hole or bore for housing a flashlamp or a mirror
}
H01S 3/061
. . . .
{
with elliptical or circular cross-section and elongated shape, e.g. rod
}
. . . .
{
Non-homogeneous structure ( H01S 3/07 takes precedence )
}
H01S 3/0615
. . . .
{
Shape of end-face
}
. . . .
{
having a varying composition or cross-section in a specific direction
}
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H01S 3/0619
. . .
{
Coatings, e.g. AR, HR, passivation layer
}
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H01S 3/0621
. . . .
{
Coatings on the end-faces, e.g. input/output surfaces of the laser light
}
H01S 3/0623
. . . . .
{
Antireflective (AR)
}
H01S 3/0625
. . . .
{
Coatings on surfaces other than the end-faces
}
H01S 3/0627
. . .
{
the resonator being monolithic, e.g. microlaser
}
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H01S 3/063
. . .
Waveguide lasers,
{
i.e. whereby the dimensions of the waveguide are of the order of the light wavelength ( waveguide gas lasers H01S 3/0315 )
}
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H01S 3/0632
. . . .
{
Thin film lasers in which light propagates in the plane of the thin film
}
H01S 3/0635
. . . . .
{
provided with a periodic structure, e.g. using distributed feed-back, grating couplers ( controlling, e.g. modulating distributed feed-back lasers H01S 3/102 )
}
H01S 3/0637
. . . . .
{
Integrated lateral waveguide, e.g. the active waveguide is integrated on a substrate made by Si on insulator technology (Si/SiO2)
}
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. . . .
Fibre lasers
{
( optical pumping thereof H01S 3/094003 ; controlling the output parameters H01S 3/10 ; stabilisation of the output parameters H01S 3/13 ; characterised by scattering effects, i.e. stimulated Brillouin or Raman effects, H01S 3/302 )
}
H01S 3/06704
. . . . .
{
Housings; Packages
}
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H01S 3/06708
. . . . .
{
Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering ( optical fibres as passive waveguides G02B 6/02 )
}
H01S 3/06712
. . . . . .
{
Polarising fibre; Polariser
}
H01S 3/06716
. . . . . .
{
Fibre compositions ( per se C03C 13/04 ) or doping with active elements ( lasing materials in general H01S 3/14 )
}
H01S 3/0672
. . . . . .
{
Non-uniform radial doping
}
H01S 3/06725
. . . . . .
{
Fibre characterized by a specific dispersion, e.g. for pulse shaping in soliton lasers or for dispersion compensating [DCF
}
]
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H01S 3/06729
. . . . . .
{
Peculiar transverse fibre profile
}
H01S 3/06733
. . . . . . .
{
Fibre having more than one cladding
}
H01S 3/06737
. . . . . . .
{
Fibre having multiple non-coaxial cores, e.g. multiple active cores or separate cores for pump and gain
}
H01S 3/06741
. . . . . . .
{
Photonic crystal fibre, i.e. the fibre having a photonic bandgap
}
H01S 3/06745
. . . . . .
{
Tapering of the fibre, core or active region
}
H01S 3/0675
. . . . .
{
Resonators including a grating structure, e.g. distributed Bragg reflectors (DBR) or distributed feedback (DFB) fibre lasers
}
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. . . . .
{
Fibre amplifiers ( H01S 3/06708 takes precedence )
}
H01S 3/06758
. . . . . .
{
Tandem amplifiers
}
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H01S 3/06762
. . . . . .
{
having a specific amplification band
}
H01S 3/06766
. . . . . . .
{
C-band amplifiers, i.e. amplification in the range of about 1530 nm to 1560 nm
}
H01S 3/0677
. . . . . . .
{
L-band amplifiers, i.e. amplification in the range of about 1560 nm to 1610 nm
}
H01S 3/06775
. . . . . . .
{
S-band amplifiers, i.e. amplification in the range of about 1450 nm to 1530 nm
}
H01S 3/06779
. . . . . .
{
with optical power limiting
}
H01S 3/06783
. . . . . .
{
Amplifying coupler
}
H01S 3/06787
. . . . . .
{
Bidirectional amplifier
}
H01S 3/06791
. . . . .
{
Fibre ring lasers ( fibre laser gyrometers G01C 19/72 )
}
H01S 3/06795
. . . . .
{
with superfluorescent emission, e.g. amplified spontaneous emission sources for fibre laser gyrometers ( fibre laser gyrometers per se G01C 19/72 )
}
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. . .
consisting of a plurality of parts, e.g. segments ( H01S 3/067 takes precedence )
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H01S 3/073
. . . .
{
Gas lasers comprising separate discharge sections in one cavity, e.g. hybrid lasers ( tandem arrangements of separate gas lasers H01S 3/2366 )
}
H01S 3/076
. . . . .
{
Folded-path lasers
}
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. .
Construction or shape of optical resonators or components thereof
{
( waveguide lasers H01S 3/063 ; controlling the laser output H01S 3/10 ; stabilising H01S 3/13 )
}
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H01S 3/08004
. . .
{
incorporating a dispersive element, e.g. a prism for wavelength selection ( H01S 3/0811 , H01S 3/08022 take precedence )
}
H01S 3/08009
. . . .
{
using a diffraction grating
}
H01S 3/08013
. . .
{
Resonator comprising a fibre, e.g. for modifying dispersion or repetition rate
}
( the active medium being a fibre H01S 3/067 )
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H01S 3/08018
. . .
{
Mode suppression
}
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H01S 3/08022
. . . .
{
Longitudinal mode control, e.g. specifically multimode
}
H01S 3/08027
. . . . .
{
by a filter, e.g. a Fabry-Perot filter is used for wavelength setting
}
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H01S 3/08031
. . . . .
{
Single-mode emission
}
H01S 3/08036
. . . . . .
{
by a dispersive, polarising or birefringent element placed in the cavity, e.g. a Fabry-Perot etalon, tilted plate
}
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H01S 3/0804
. . . .
{
Transverse or lateral mode control, e.g. specifically multimode
}
H01S 3/08045
. . . . .
{
Single-mode emission
}
H01S 3/0805
. . . . .
{
by apertures, e.g. pinholes, knife-edges, apodizers
}
H01S 3/08054
. . .
{
Passive cavity elements acting on the polarization, e.g. a polarizer for branching or walk-off compensation ( quarter-wave plates in a Q-switch laser H01S 3/1124 , H01S 3/115 )
}
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H01S 3/08059
. . .
{
Constructional details of the reflector, e.g. shape ( mirrors in general G02B 5/08 ; mountings for mirrors G02B 7/18 )
}
H01S 3/08063
. . . .
{
Graded reflectivity, e.g. variable reflectivity mirror
}
H01S 3/08068
. . . .
{
Holes; Stepped surface; Special cross-section
}
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H01S 3/08072
. . .
{
Thermal lensing or thermally induced birefringence; Compensation thereof
}
H01S 3/08077
. . . .
{
Pump induced waveguiding, i.e. the pump induces refractive index change in the laser medium to guide the amplified light, e.g. gain- or loss- guiding or thermally induced refractive index change
}
H01S 3/08081
. . .
{
Unstable resonators
}
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. . .
{
Multiple-wavelength emission
}
H01S 3/0809
. . . .
{
Two-wavelenghth emission
}
. . .
{
Zig-zag travelling beam through the active medium
}
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H01S 3/081
. . .
comprising more than two reflectors
{
( folded-path gas lasers H01S 3/076 )
}
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H01S 3/0811
. . . .
{
incorporating a dispersive element, e.g. a prism for wavelength selection
}
H01S 3/0812
. . . . .
{
using a diffraction grating
}
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H01S 3/0813
. . . .
{
Configuration of resonator
}
H01S 3/0815
. . . . .
{
having 3 reflectors, i.e. V-shaped resonators
}
H01S 3/0816
. . . . .
{
having 4 reflectors, i.e. Z-shaped resonators
}
H01S 3/0817
. . . . .
{
having 5 reflectors, i.e. W-shaped resonators
}
H01S 3/0818
. . . .
{
Unstable resonators
}
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. . . .
defining a plurality of resonators, e.g. for mode selection
{
( single longitudinal mode control H01S 3/08022 )
}
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H01S 3/0823
. . . . .
{
incorporating a dispersive element, e.g. a prism for wavelength selection
}
H01S 3/0826
. . . . . .
{
using a diffraction grating
}
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. . . .
Ring lasers ( ring laser gyrometers G01C 19/66 ;
{
fibre ring lasers H01S 3/06791
}
)
H01S 3/0835
. . . . .
{
Gas ring lasers
}
. . .
One or more reflectors having variable properties or positions for initial adjustment of the resonator ( varying a parameter of the laser output during operation H01S 3/10 ; stabilisation of the laser output H01S 3/13 )
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H01S 3/09
.
Processes or apparatus for excitation, e.g. pumping
H01S 3/0903
. .
{
Free-electron laser
}
H01S 3/0906
. .
{
Electrical, electrochemical, or electron-beam pumping of a dye laser
}
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H01S 3/091
. .
using optical pumping
H01S 3/0912
. . .
{
Electronics or drivers for the pump source, i.e. details of drivers or circuitry specific for laser pumping ( laser diode drivers H01S 5/042 )
}
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H01S 3/0915
. . .
by incoherent light
H01S 3/09155
. . . .
{
by cathodo-luminescence
}
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H01S 3/092
. . . .
of flash lamp ( H01S 3/0937 takes precedence;
{
( flash lamps per se H01J 61/80 ; circuit arrangements for operating flash lamps in general H05B 41/30 )
}
)
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H01S 3/093
. . . . .
focusing or directing the excitation energy into the active medium
H01S 3/0931
. . . . . .
{
Imaging pump cavity, e.g. elliptical
}
H01S 3/0933
. . . .
of a semiconductor, e.g. light emitting diode
H01S 3/0937
. . . .
produced by exploding or combustible material
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H01S 3/094
. . .
by coherent light
NOTE
-
Groups H01S 3/094003 to H01S 3/094088 take precedence over groups H01S 3/0941 to H01S 3/0947

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H01S 3/094003
. . . .
{
the pumped medium being a fibre
}
H01S 3/094007
. . . . .
{
Cladding pumping, i.e. pump light propagating in a clad surrounding the active core
}
H01S 3/094011
. . . . .
{
with bidirectional pumping, i.e. with injection of the pump light from both two ends of the fibre
}
H01S 3/094015
. . . . .
{
with pump light recycling, i.e. with reinjection of the unused pump light back into the fiber, e.g. by reflectors or circulators
}
H01S 3/094019
. . . . .
{
Side pumped fibre, whereby pump light is coupled laterally into the fibre via an optical component like a prism, or a grating , or via V-groove coupling
}
H01S 3/094023
. . . . .
{
with ASE light recycling, with reinjection of the ASE light back into the fiber, e.g. by reflectors or circulators
}
H01S 3/094026
. . . .
{
for synchronously pumping, e.g. for mode-locking
}
H01S 3/09403
. . . .
{
Cross-pumping, e.g. Förster process involving intermediate medium for excitation transfer
}
H01S 3/094034
. . . .
{
the pumped medium being a dye
}
H01S 3/094038
. . . .
{
End pumping
}
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H01S 3/094042
. . . .
{
of a fibre laser
}
H01S 3/094046
. . . . .
{
of a Raman fibre laser
}
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H01S 3/094049
. . . .
{
Guiding of the pump light
}
H01S 3/094053
. . . . .
{
Fibre coupled pump, e.g. delivering pump light using a fibre or a fibre bundle
}
H01S 3/094057
. . . . .
{
by tapered duct or homogenized light pipe, e.g. for concentrating pump light
}
H01S 3/094061
. . . .
{
Shared pump, i.e. pump light of a single pump source is used to pump plural gain media in parallel
}
H01S 3/094065
. . . .
{
Single-mode pumping
}
H01S 3/094069
. . . .
{
Multi-mode pumping
}
H01S 3/094073
. . . .
{
Non-polarized pump, e.g. depolarizing the pump light for Raman lasers
}
. . . .
{
Pulsed or modulated pumping ( H01S 3/1024 takes precedence )
}
H01S 3/09408
. . . .
{
Pump redundancy
}
H01S 3/094084
. . . .
{
with pump light recycling, i.e. with reinjection of the unused pump light, e.g. by reflectors or circulators
}
H01S 3/094088
. . . .
{
with ASE light recycling, i.e. with reinjection of the ASE light, e.g. by reflectors or circulators
}
H01S 3/094092
. . . .
{
Upconversion pumping
}
H01S 3/094096
. . . .
{
Multi-wavelength pumping
}
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. . . .
of a laser diode
H01S 3/09415
. . . . .
{
the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
}
H01S 3/0943
. . . .
of a gas laser
H01S 3/0947
. . . .
of an organic dye laser
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. .
using chemical or thermal pumping
{
( generating plasma, e.g. by combustion H02K 44/00 , H05H 1/24 )
}
H01S 3/09505
. . .
{
involving photochemical reactions, e.g. photodissociation ( Iodine lasers H01S 3/2215 )
}
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H01S 3/0951
. . .
by increasing the pressure in the laser gas medium
H01S 3/0953
. . . .
Gas dynamic laser, i.e. with expansion of the laser gas medium to supersonic flow speeds
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. .
using pumping by high energy particles
{
( H01S 3/0903 , H01S 3/0906 , H01S 3/09707 take precedence )
}
H01S 3/0957
. . .
by high energy nuclear particles
H01S 3/0959
. . .
by an electron beam
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H01S 3/097
. .
by gas discharge of a gas laser
H01S 3/09702
. . .
{
Details of the driver electronics and electric discharge circuits
}
H01S 3/09705
. . .
{
with particular means for stabilising the discharge
}
H01S 3/09707
. . .
{
using an electron or ion beam ( free-electron laser H01S 3/0903 )
}
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. . .
transversely excited ( H01S 3/0975 takes precedence )
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H01S 3/09713
. . . .
{
with auxiliary ionisation, e.g. double discharge excitation
}
H01S 3/09716
. . . . .
{
by ionising radiation
}
H01S 3/0973
. . . .
having a travelling wave passing through the active medium
H01S 3/0975
. . .
using inductive or capacitive excitation
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. . .
having auxiliary ionisation means
{
( H01S 3/09713 takes precedence )
}
H01S 3/09775
. . . .
{
by ionising radiation
}
H01S 3/0979
. . .
Gas dynamic lasers, i.e. with expansion of the laser gas medium to supersonic flow speeds
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.
Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating ( mode locking
{
H01S 3/1106
}
; controlling of light beams, frequency-changing, non-linear optics, optical logic elements, in general G02F )
NOTE
-
Group H01S 3/10007 takes precedence over groups H01S 3/102 to H01S 3/104

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H01S 3/10007
. .
{
in optical amplifiers
}
H01S 3/10015
. . .
{
by monitoring or controlling, e.g. attenuating, the input signal
}
Collapse
H01S 3/10023
. . .
{
by functional association of additional optical elements, e.g. filters, gratings, reflectors
}
H01S 3/1003
. . . .
{
turnable optical elements, e.g. acousto-optic filters, tunable gratings
}
Collapse
H01S 3/10038
. .
{
Amplitude control
}
. . .
{
Pulse repetition rate control ( H01S 3/11 takes precedence )
}
H01S 3/10053
. .
{
Phase control
}
H01S 3/10061
. .
{
Polarization control
}
H01S 3/10069
. .
{
Memorized or pre-programmed characteristics, e.g. look-up table [LUT
}
]
H01S 3/10076
. .
{
using optical phase conjugation, e.g. phase conjugate reflection
}
Collapse
H01S 3/10084
. .
{
Frequency control by seeding
}
H01S 3/10092
. . .
{
Coherent seed, e.g. injection locking
}
. .
Lasers provided with means to change the location from which, or the direction in which, laser radiation is emitted ( optical-mechanical scanning systems in general G02B 26/10 ; electro-, magneto- or acousto-optical deflection G02F 1/29 ;
{
control of position or direction of light beam generating device in general G05D 3/00
}
)
Collapse
. .
by controlling the active medium, e.g. by controlling the processes or apparatus for excitation ( H01S 3/13 takes precedence )
Collapse
H01S 3/1022
. . .
{
by controlling the optical pumping
}
. . . .
{
for pulse generation
}
H01S 3/1026
. . .
{
Controlling the active medium by translation or rotation, e.g. to remove heat from that part of the active medium that is situated on the resonator axis
}
H01S 3/1028
. . .
{
by controlling the temperature
}
H01S 3/104
. . .
in gas lasers
Collapse
H01S 3/105
. .
by controlling the mutual position or the reflecting properties of the reflectors of the cavity
{
e.g. by controlling the cavity length
}
(
{
H01S 3/10076
}
, H01S 3/13 take precedence )
H01S 3/1051
. . .
{
one of the reflectors being of the type using frustrated reflection
}
H01S 3/1053
. . .
{
Control by pressure or deformation
}
H01S 3/1055
. . .
one of the reflectors being constituted by a diffraction grating
Collapse
H01S 3/106
. .
by controlling a device placed within the cavity (
{
H01S 3/10076
}
, H01S 3/13 take precedence )
H01S 3/1061
. . .
{
using a variable absorption device
}
H01S 3/1062
. . .
{
using a controlled passive interferometer, e.g. a Fabry-Perot etalon
}
H01S 3/1063
. . .
{
using a solid state device provided with at least one potential jump barrier
}
H01S 3/1065
. . .
{
using liquid crystals
}
H01S 3/1066
. . .
{
using a magneto-optical device
}
H01S 3/1067
. . .
{
using pressure or deformation
}
H01S 3/1068
. . .
{
using an acousto-optical device
}
Collapse
H01S 3/107
. . .
using an electro-optical device, e.g. exhibiting Pockels- or Kerr-effect
{
( H01S 3/1061 , H01S 3/1063 , H01S 3/1065 take precedence )
}
H01S 3/1075
. . . .
{
for optical deflection
}
Collapse
. . .
using a non-linear optical device, e.g. exhibiting Brillouin- or Raman-scattering
{
( mode locking using a non-linear element H01S 3/1112 )
}
H01S 3/1083
. . . .
{
using parametric generation
}
H01S 3/1086
. . . .
{
using scattering effects, e.g. Raman or Brillouin effect
}
Collapse
H01S 3/109
. . . .
Frequency multiplying, e.g. harmonic generation
H01S 3/1095
. . . . .
{
self doubling, e.g. lasing and frequency doubling by the same active medium
}
Collapse
. .
{
Pulse generation, e.g. Q-switching, mode locking
}
H01S 3/1103
. . .
{
Cavity dumping
}
Collapse
H01S 3/1106
. . .
{
Mode locking
}
H01S 3/1109
. . . .
{
Active mode locking
}
Collapse
H01S 3/1112
. . . .
{
Passive mode locking
}
Collapse
H01S 3/1115
. . . . .
{
using a saturable absorber ( Q-switching by saturable absorbers H01S 3/113 )
}
H01S 3/1118
. . . . . .
{
Solid state absorber, e.g. SESAM
}
H01S 3/1121
. . . .
{
Harmonically mode-locked lasers, e.g. modulation frequency equals multiple integers or a fraction of the resonator roundtrip time
}
H01S 3/1124
. . .
{
Q-switching using magneto-optical devices
}
H01S 3/1127
. . .
{
Q-switching using pulse transmission mode (PTM)
}
H01S 3/113
. . .
{
Q-switching
}
using bleachable or solarising media
H01S 3/115
. . .
{
Q-switching
}
using electro-optical devices
H01S 3/117
. . .
{
Q-switching
}
using acousto-optical devices
Collapse
H01S 3/121
. . .
{
Q-switching
}
using mechanical devices
H01S 3/123
. . . .
Rotating mirror
H01S 3/125
. . . .
Rotating prism
H01S 3/127
. . .
Plural Q-switches
Collapse
H01S 3/13
. .
Stabilisation of laser output parameters, e.g. frequency, amplitude
NOTE
-
Group H01S 3/1301 takes precedence over groups H01S 3/131 to H01S 3/134

Collapse
H01S 3/1301
. . .
{
in optical amplifiers
}
H01S 3/1302
. . . .
{
by all-optical means, e.g. gain-clamping
}
H01S 3/1303
. . .
{
by using a passive reference, e.g. absorption cell ( H01S 3/139 takes precedence )
}
H01S 3/1304
. . .
{
by using an active reference, e.g. second laser, klystron or other standard frequency source ( H01S 3/139 takes precedence; automatic control of electronic generators H03L 7/00 )
}
H01S 3/1305
. . .
{
Feedback control systems
}
H01S 3/1306
. . .
{
Stabilisation of the amplitude
}
H01S 3/1307
. . .
{
Stabilisation of the phase
}
H01S 3/1308
. . .
{
Stabilisation of the polarisation
}
Collapse
H01S 3/131
. . .
by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
H01S 3/1312
. . . .
{
by controlling the optical pumping
}
H01S 3/1315
. . . .
{
by gain saturation
}
H01S 3/1317
. . . .
{
by controlling the temperature
}
H01S 3/134
. . . .
in gas lasers
Collapse
H01S 3/136
. . .
by controlling a device placed within the cavity
H01S 3/137
. . . .
for stabilising of frequency
Collapse
H01S 3/139
. . .
by controlling the mutual position or the reflecting properties of the reflectors of the cavity
{
e.g. by controlling the cavity length
}
H01S 3/1392
. . . .
{
by using a passive reference, e.g. absorption cell ( H01S 3/1396 , H01S 3/1398 take precedence )
}
H01S 3/1394
. . . .
{
by using an active reference, e.g. second laser, klystron or other standard frequency source
}
H01S 3/1396
. . . .
{
by using two modes present, e.g. Zeeman splitting ( H01S 3/1398 takes precedence )
}
H01S 3/1398
. . . .
{
by using a supplementary modulation of the output
}
Collapse
H01S 3/14
.
characterised by the material used as the active medium
Collapse
H01S 3/16
. .
Solid materials
Collapse
H01S 3/1601
. . .
{
characterised by an active (lasing) ion
}
Collapse
H01S 3/1603
. . . .
{
rare earth
}
H01S 3/1605
. . . . .
{
terbium
}
H01S 3/1606
. . . . .
{
dysprosium
}
H01S 3/1608
. . . . .
{
erbium
}
H01S 3/161
. . . . .
{
holmium
}
H01S 3/1611
. . . . .
{
neodymium
}
H01S 3/1613
. . . . .
{
praseodymium
}
H01S 3/1615
. . . . .
{
samarium
}
H01S 3/1616
. . . . .
{
thulium
}
H01S 3/1618
. . . . .
{
ytterbium
}
Collapse
H01S 3/162
. . . .
{
transition metal
}
H01S 3/1621
. . . . .
{
cobalt
}
H01S 3/1623
. . . . .
{
chromium, e.g. Alexandrite
}
H01S 3/1625
. . . . .
{
titanium
}
H01S 3/1626
. . . .
{
uranium
}
. . .
{
characterised by a semiconducting matrix
}
Collapse
H01S 3/163
. . .
{
characterised by a crystal matrix
}
Collapse
H01S 3/1631
. . . .
{
aluminate
}
H01S 3/1633
. . . . .
{
BeAl2O4 i.e. Chrysoberyl
}
H01S 3/1635
. . . . .
{
LaMgAl11O19 ( LNA, Lanthanum Magnesium Hexaluminate )
}
H01S 3/1636
. . . . .
{
Al2O3 (Sapphire)
}
H01S 3/1638
. . . . .
{
YAlO3 ( YALO or YAP, Yttrium Aluminium Perovskite )
}
Collapse
H01S 3/164
. . . .
{
garnet
}
H01S 3/1641
. . . . .
{
GGG
}
H01S 3/1643
. . . . .
{
YAG
}
Collapse
H01S 3/1645
. . . .
{
halide
}
H01S 3/1646
. . . . .
{
BaY2F8
}
H01S 3/1648
. . . . .
{
with the formula XYZF6 ( Colquiriite structure ) , wherein X is Li, Na, K or Rb, Y is Mg, Ca, Sr, Cd or Ba and Z is Al, Sc or Ga
}
H01S 3/165
. . . . .
{
with the formula MF2, wherein M is Ca, Sr or Ba
}
H01S 3/1651
. . . . .
{
SrAlF5
}
H01S 3/1653
. . . . .
{
YLiF4 ( YLF, LYF )
}
Collapse
H01S 3/1655
. . . .
{
silicate
}
H01S 3/1656
. . . . .
{
BeAl2(SiO3)6
}
H01S 3/1658
. . . . .
{
Mg2SiO4 (Forsterite)
}
H01S 3/166
. . . . .
{
La3Ga5SiO14 (LGS)
}
H01S 3/1661
. . . . .
{
Y2SiO5 (YSO)
}
Collapse
H01S 3/1663
. . . .
{
beryllate
}
H01S 3/1665
. . . . .
{
La2Be2O5 (BEL)
}
H01S 3/1666
. . . .
{
borate, carbonate, arsenide
}
Collapse
H01S 3/1668
. . . .
{
scandate
}
H01S 3/167
. . . . .
{
Sc2O3
}
Collapse
H01S 3/1671
. . . .
{
vanadate, niobate, tantalate
}
H01S 3/1673
. . . . .
{
YVO4 (YVO)
}
Collapse
H01S 3/1675
. . . .
{
titanate, germanate, molybdate, tungstate
}
H01S 3/1676
. . . . .
{
Li4Ge5O12
}
H01S 3/1678
. . . . .
{
LaBGeO5
}
H01S 3/168
. . .
{
using an organic dye dispersed in a solid matrix
}
H01S 3/1681
. . .
{
using colour centres
}
H01S 3/1683
. . .
{
using superconductivity e.g. provided with Josephson junctions
}
. . .
{
Ceramics
}
H01S 3/1686
. . .
{
Liquid crystal active layer
}
H01S 3/1688
. . .
{
Stoichiometric laser compounds, i.e. in which the active element forms one component of a stoichiometric formula rather than being merely a dopant
}
H01S 3/169
. . .
{
Nanoparticles, e.g. doped nanoparticles acting as a gain material
}
Collapse
H01S 3/1691
. . .
{
characterised by additives / sensitisers / promoters as further dopants
}
H01S 3/1693
. . . .
{
aluminium
}
H01S 3/1695
. . . .
{
germanium
}
H01S 3/1696
. . . .
{
transition metal
}
H01S 3/1698
. . . .
{
rare earth
}
Collapse
. . .
amorphous, e.g. glass
{
( glass manufacture, shaping or supplementary processes C03B; compositions for laserable glass C03C 4/0071 )
}
H01S 3/171
. . . .
{
chalcogenide glass
}
H01S 3/172
. . . .
{
selenide glass
}
H01S 3/173
. . . .
{
fluoride glass, e.g. fluorozirconate or ZBLAN [ ZrF4-BaF2-LaF3-AlF3-NaF
}
]
H01S 3/175
. . . .
{
phosphate glass
}
H01S 3/176
. . . .
{
silica or silicate glass
}
H01S 3/177
. . . .
{
telluride glass
}
H01S 3/178
. . . .
{
plastic
}
Collapse
H01S 3/20
. .
Liquids
H01S 3/207
. . .
including a chelate
{
e.g. including atoms or ions, e.g. Nd
}
H01S 3/213
. . .
including an organic dye
Collapse
H01S 3/22
. .
Gases
H01S 3/2207
. . .
{
Noble gas ions, e.g. Ar+>, Kr+>
}
H01S 3/2215
. . .
{
Iodine compounds or atomic iodine
}
H01S 3/2222
. . .
{
Neon, e.g. in helium-neon (He-Ne) systems
}
Collapse
H01S 3/223
. . .
the active gas being polyatomic, i.e. containing more than one atom ( H01S 3/227 takes precedence )
H01S 3/2232
. . . .
{
Carbon dioxide (CO2) or monoxide (CO)
}
H01S 3/2235
. . . .
{
Dye vapour
}
H01S 3/2237
. . . .
{
Molecular nitrogen (N2), e.g. in noble gas-N2 systems
}
Collapse
H01S 3/225
. . . .
comprising an excimer or exciplex
H01S 3/2251
. . . . .
{
ArF, i.e. argon fluoride is comprised for lasing around 193 nm
}
H01S 3/2253
. . . . .
{
XeCl, i.e. xenon chloride is comprised for lasing around 308 nm
}
H01S 3/2255
. . . . .
{
XeF, i.e. xenon fluoride is comprised for lasing around 351 nm
}
H01S 3/2256
. . . . .
{
KrF, i.e. krypton fluoride is comprised for lasing around 248 nm
}
H01S 3/2258
. . . . .
{
F2, i.e. molecular fluoride is comprised for lasing around 157 nm
}
H01S 3/227
. . .
Metal vapour
Collapse
H01S 3/23
.
Arrangements of two or more lasers not provided for in groups H01S 3/02 to H01S 3/22 , e.g. tandem arrangements of separate active media
Collapse
H01S 3/2308
. .
{
Amplifier arrangements, e.g. MOPA
}
H01S 3/2316
. . .
{
Cascaded amplifiers
}
Collapse
H01S 3/2325
. . .
{
Multi-pass amplifiers, e.g. regenerative amplifiers
}
H01S 3/2333
. . . .
{
Double-pass amplifiers
}
H01S 3/2341
. . . .
{
Four pass amplifiers
}
H01S 3/235
. . . .
{
Regenerative amplifiers
}
H01S 3/2358
. .
{
comprising dyes as the active medium
}
H01S 3/2366
. .
{
comprising a gas as the active medium ( H01S 3/10092 , H01S 3/2383 take precedence )
}
H01S 3/2375
. .
{
Hybrid lasers ( H01S 3/07 takes precedence )
}
Collapse
H01S 3/2383
. .
{
Parallel arrangements
}
H01S 3/2391
. . .
{
emitting at different wavelengths
}
Collapse
H01S 3/30
.
using scattering effects, e.g. stimulated Brillouin or Raman effects
H01S 3/302
. .
{
in an optical fibre
}
H01S 3/305
. .
{
in a gas
}
H01S 3/307
. .
{
in a liquid
}
Devices using stimulated emission or wave energy other than those covered by groups H01S 1/00 or H01S 3/00 , e.g. phonon maser, gamma maser
Collapse
Semiconductor lasers
{
( superluminescent diodes H01L 33/0045 )
}
Collapse
H01S 5/0014
.
{
Measuring characteristics or properties thereof ( measuring techniques per se G01J, G01K, G01N, G01R )
}
H01S 5/0021
. .
{
Degradation or life time measurements
}
H01S 5/0028
. .
{
Laser diodes used as detectors
}
H01S 5/0035
. .
{
Simulations of laser characteristics
}
H01S 5/0042
. .
{
On wafer testing, e.g. lasers are tested before separating wafer into chips
}
Collapse
H01S 5/005
.
{
Optical devices external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping ( H01S 5/026 , H01S 5/18388 take precedence )
}
H01S 5/0057
. .
{
Temporal shaping, e.g. pulse compression, frequency chirping
}
H01S 5/0064
. .
{
Anti-reflection devices, e.g. optical isolators
}
H01S 5/0071
. .
{
Beam steering, e.g. whereby a mirror outside the cavity is present to change the beam direction
}
H01S 5/0078
. .
{
Frequency filtering
}
H01S 5/0085
. .
{
Modulating the output, i.e. the laser beam is modulated outside the laser cavity
}
H01S 5/0092
. .
{
Nonlinear frequency conversion, e.g. second harmonic generation [SHG
}
or sum- or difference-frequency generation outside the laser cavity ( nonlinear frequency conversion per se G02F 1/35 ) ]
Collapse
H01S 5/02
.
Structural details or components not essential to laser action
Collapse
H01S 5/0201
. .
{
Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
}
H01S 5/0202
. . .
{
Cleaving
}
H01S 5/0203
. . .
{
Etching
}
H01S 5/0205
. . .
{
during growth of the semiconductor body
}
Collapse
H01S 5/0206
. .
{
Substrates, e.g. growth, shape, material, removal or bonding; ( specific crystal orientation H01S 5/3202 )
}
H01S 5/0207
. . .
{
Substrates having a special shape
}
H01S 5/0208
. . .
{
Semi-insulating substrates
}
H01S 5/021
. . .
{
Silicon based substrates
}
Collapse
H01S 5/0211
. . .
{
Substrates made of ternary or quaternary compounds
}
H01S 5/0212
. . . .
{
with a graded composition
}
H01S 5/0213
. . .
{
Sapphire, quartz or diamond based substrates
}
Collapse
H01S 5/0215
. . .
{
Bonding to the substrate
}
H01S 5/0216
. . . .
{
using an intermediate compound, e.g. a glue or solder
}
H01S 5/0217
. . .
{
Removal of the substrate
}
H01S 5/0218
. . .
{
Substrates comprising semiconducting materials from different groups of the periodic system than the active layer
}
Collapse
. .
{
Mountings; Housings ( packaging and electrical lead-through per se H01L 23/00 )
}
H01S 5/02204
. . .
{
including a getter material to absorb contaminations
}
Collapse
H01S 5/02208
. . .
{
Shape of the housing
}
H01S 5/02212
. . . .
{
Can-type, e.g. TO-9 housing with emission along or parallel to symmetry axis
}
H01S 5/02216
. . . .
{
Butterfly-type, i.e. the housing is generally flat
}
Collapse
H01S 5/0222
. . .
{
filled with special gases
}
H01S 5/02224
. . . .
{
Oxygen is contained in the housing, e.g. to avoid contamination of the light emitting facet
}
H01S 5/02228
. . .
{
filled with a resin, or the complete housing being made of resin
}
H01S 5/02232
. . .
{
filled with a liquid ( H01S 5/0243 takes precedence )
}
Collapse
H01S 5/02236
. . .
{
Mounts or sub-mounts ( H01S 5/02476 takes precedence )
}
H01S 5/0224
. . . .
{
Up-side down mounting, e.g. flip-chip or epi-side down mounted laser
}
H01S 5/02244
. . . .
{
Lead-frames, e.g. the laser is mounted on a lead frame or on a stem
}
Collapse
H01S 5/02248
. . . .
{
Mechanically integrated components on a mount or an optical micro-bench, e.g. optical components, detectors, etc.
}
H01S 5/02252
. . . . .
{
Relative positioning of laser diode and optical components, e.g. grooves in the mount to fix an optical fibre or a lens
}
Collapse
H01S 5/02256
. . . .
{
Details of fixing the laser diode on the mount
}
H01S 5/0226
. . . . .
{
using an adhesive
}
H01S 5/02264
. . . . .
{
by clamping
}
H01S 5/02268
. . . . .
{
Positioning, e.g. using marks for positioning of the laser diode
}
H01S 5/02272
. . . . .
{
using soldering
}
H01S 5/02276
. . . .
{
Wire-bonding details
}
Collapse
H01S 5/0228
. . .
{
Out-coupling light
}
H01S 5/02284
. . . .
{
with an optical fibre
}
H01S 5/02288
. . . .
{
with a lens
}
H01S 5/02292
. . . .
{
with a beam deflecting element
}
H01S 5/02296
. . . .
{
Details of a window, e.g. special materials or special orientation for back-reflecting light to a detector inside the housing
}
Collapse
. .
Cooling arrangements
{
( cooling solid state junction devices H01L 23/34 ; Heating arrangements ( H01S 5/0261 takes precedence ) )
}
Collapse
H01S 5/02407
. . .
{
Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
}
H01S 5/02415
. . . .
{
by using a thermo-electric cooler [TEC
}
, e.g. Peltier element]
Collapse
H01S 5/02423
. . . .
{
Liquid cooling, e.g. a liquid cools a mount of the laser
}
H01S 5/0243
. . . . .
{
Laser is immersed in the coolant, i.e. the whole laser chip is immersed in the liquid for cooling
}
Collapse
H01S 5/02438
. . .
{
Characterized by cooling of elements other than the laser, e.g. an optical element being part of an external cavity or a collimating lens
}
H01S 5/02446
. . . .
{
Cooling being separate from the laser cooling
}
H01S 5/02453
. . .
{
Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment ( H01S 5/0612 takes precedence, for monolithically integrated heaters see also H01S 5/0261 )
}
H01S 5/02461
. . .
{
Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
}
H01S 5/02469
. . .
{
Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
}
Collapse
H01S 5/02476
. . .
{
Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
}
H01S 5/02484
. . . .
{
Sapphire or diamond heat spreaders
}
H01S 5/02492
. . . .
{
CuW heat spreaders
}
Collapse
. .
Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers ( stabilisation of output H01S 5/06 ; coupling light guides with opto-electronic elements G02B 6/42 ; devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate, adapted for light emission H01L 27/15 )
H01S 5/0261
. . .
{
Non-optical elements, e.g. laser driver components, heaters ( H01S 5/0265 takes precedence )
}
Collapse
H01S 5/0262
. . .
{
Photo-diodes, e.g. transceiver devices, bidirectional devices ( H01S 5/0265 takes precedence )
}
H01S 5/0264
. . . .
{
for monitoring the laser-output
}
H01S 5/0265
. . .
{
Intensity modulators ( intracavity modulators H01S 5/0625 )
}
H01S 5/0267
. . .
{
Integrated focusing lens ( H01S 5/18388 takes precedence )
}
H01S 5/0268
. . .
{
Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
}
Collapse
H01S 5/028
. .
Coatings;
{
Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
}
H01S 5/0281
. . .
{
Coatings made of semiconductor materials
}
Collapse
H01S 5/0282
. . .
{
Passivation layers or treatments
}
H01S 5/0283
. . . .
{
Optically inactive coating on the facet, e.g. half-wave coating
}
H01S 5/0284
. . .
{
Coatings with a temperature dependent reflectivity
}
H01S 5/0285
. . .
{
Coatings with a controllable reflectivity
}
H01S 5/0286
. . .
{
Coatings with a reflectivity that is not constant over the facets, e.g. apertures
}
Collapse
H01S 5/0287
. . .
{
Facet reflectivity
}
H01S 5/0288
. . . .
{
Detuned facet reflectivity, i.e. reflectivity peak is different from gain maximum
}
Collapse
.
Processes or apparatus for excitation, e.g. pumping,
{
e.g. by electron beams
}
( H01S 5/06 takes precedence )
H01S 5/041
. .
{
Optical pumping
}
Collapse
H01S 5/042
. .
Electrical excitation;
{
Circuits therefor ( discrete or monolithically integrated laser drive components on mountings H01S 5/0261 )
}
Collapse
H01S 5/0421
. . .
{
characterised by the semiconducting contacting layers ( electrodes H01S 5/0425 )
}
Collapse
H01S 5/0422
. . . .
{
with n- and p-contacts on the same side of the active layer
}
H01S 5/0424
. . . . .
{
lateral current injection
}
H01S 5/0425
. . .
{
Electrodes, e.g. materials, shape, configuration, structure
}
H01S 5/0427
. . .
{
for applying modulation to the laser
}
H01S 5/0428
. . .
{
for applying pulses to the laser
}
Collapse
.
Arrangements for controlling the laser output parameters, e.g. by operating on the active medium ( transmission systems employing light H04B 10/00 )
Collapse
H01S 5/0601
. .
{
comprising an absorbing region ( H01S 5/0604 , H01S 5/0607 , H01S 5/0615 and H01S 5/065 take precedence; bistable laser devices in general G02F 3/026 )
}
H01S 5/0602
. . .
{
which is an umpumped part of the active layer
}
Collapse
. .
{
comprising a non-linear region, e.g. generating harmonics of the laser frequency
}
H01S 5/0605
. . .
{
Self doubling, e.g. lasing and frequency doubling by the same active medium
}
Collapse
H01S 5/0607
. .
{
by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
}
Collapse
H01S 5/0608
. . .
{
controlled by light, e.g. optical switch
}
Collapse
H01S 5/0609
. . . .
{
acting on an absorbing region, e.g. wavelength convertors
}
H01S 5/0611
. . . . .
{
wavelength convectors
}
H01S 5/0612
. . .
{
controlled by temperature
}
H01S 5/0614
. . .
{
controlled by electric field, i.e whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
}
H01S 5/0615
. .
{
Q-switching, i.e. in which the quality factor of the optical resonator is rapidly changed
}
H01S 5/0617
. .
{
using memorised or pre-programmed laser characteristics
}
H01S 5/0618
. .
{
Details on the linewidth enhancement parameter alpha
}
Collapse
. .
by varying the potential of the electrodes ( H01S 5/065 takes precedence )
Collapse
H01S 5/06203
. . .
{
Transistor-type lasers ( H01S 5/0608 takes precedence )
}
H01S 5/06206
. . . .
{
Controlling the frequency of the radiation, e.g. tunable twin-guide lasers (TTG)
}
Collapse
H01S 5/06209
. . .
{
in single-section lasers ( H01S 5/0608 takes precedence )
}
H01S 5/06213
. . . .
{
Amplitude modulation
}
H01S 5/06216
. . . .
{
Pulse modulation or generation
}
H01S 5/0622
. . . .
{
Controlling the frequency of the radiation
}
H01S 5/06223
. . .
{
using delayed or positive feedback
}
Collapse
H01S 5/06226
. . .
{
Modulation at ultra-high frequencies
}
H01S 5/0623
. . . .
{
using the beating between two closely spaced optical frequencies, i.e. heterodyne mixing
}
Collapse
H01S 5/06233
. . .
{
Controlling other output parameters than intensity or frequency
}
H01S 5/06236
. . . .
{
controlling the polarisation, e.g. TM/TE polarisation switching
}
H01S 5/0624
. . . .
{
controlling the near- or far field
}
H01S 5/06243
. . . .
{
controlling the position or direction of the emitted beam
}
H01S 5/06246
. . . .
{
controlling the phase
}
Collapse
H01S 5/0625
. . .
in multi-section lasers
H01S 5/06251
. . . .
{
Amplitude modulation
}
H01S 5/06253
. . . .
{
Pulse modulation
}
Collapse
H01S 5/06255
. . . .
{
Controlling the frequency of the radiation
}
H01S 5/06256
. . . . .
{
with DBR-structure
}
H01S 5/06258
. . . . .
{
with DFB-structure
}
Collapse
H01S 5/065
. .
Mode locking ; Mode suppression ; Mode selection;
{
Self pulsating
}
Collapse
H01S 5/0651
. . .
{
Mode control
}
H01S 5/0652
. . . .
{
Coherence lowering or collapse, e.g. multimode emission by additional input or modulation
}
Collapse
H01S 5/0653
. . . .
{
Mode suppression, e.g. specific multimode
}
H01S 5/0654
. . . . .
{
Single longitudinal mode emission
}
H01S 5/0655
. . . . .
{
Single transverse or lateral mode emission
}
H01S 5/0656
. . .
{
Seeding, i.e. an additional light input is provided for controlling the laser modes, for example by back-reflecting light from an external optical component ( H01S 5/14 , H01S 5/4062 and H01S 5/4006 take precedence )
}
H01S 5/0657
. . .
{
Mode-locking, i.e.generation of pulses at a frequency corresponding to a roundtrip in the cavity
}
H01S 5/0658
. . .
{
Self-pulsating
}
Collapse
. .
Stabilisation of laser output parameters ( H01S 5/0625 takes precedence )
H01S 5/06804
. . .
{
by monitoring an external parameter, e.g. temperature
}
H01S 5/06808
. . .
{
by monitoring the electrical laser parameters, e.g. voltage or current
}
H01S 5/06812
. . .
{
by monitoring or fixing the threshold current or other specific points of the L-I or V-I characteristics
}
H01S 5/06817
. . .
{
Noise reduction
}
H01S 5/06821
. . .
{
Stabilising other output parameters than intensity or frequency, e.g. phase, polarisation or far-fields
}
. . .
{
Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
}
Collapse
H01S 5/0683
. . .
{
by monitoring the optical output parameters
}
H01S 5/06832
. . . .
{
Stabilising during amplitude modulation
}
H01S 5/06835
. . . .
{
Stabilising during pulse modulation or generation
}
H01S 5/06837
. . . .
{
Stabilising otherwise than by an applied electric field or current, e.g. by controlling the temperature
}
H01S 5/0687
. . . .
Stabilising the frequency of the laser
Collapse
.
Construction or shape of the optical resonator,
{
e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region ( H01S 5/20 takes precedence )
}
Collapse
. .
{
Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
}
H01S 5/1007
. . .
{
Branched waveguides
}
H01S 5/101
. . .
{
Curved waveguide ( H01S 5/1243 takes precedence )
}
H01S 5/1014
. . .
{
Tapered waveguide, e.g. spotsize converter ( H01S 5/1064 takes precedence )
}
H01S 5/1017
. . .
{
Waveguide having a void for insertion of materials to change optical properties
}
H01S 5/1021
. .
{
Coupled cavities ( H01S 5/14 takes precedence )
}
H01S 5/1025
. .
{
Extended cavities
}
Collapse
H01S 5/1028
. .
{
Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled (DFC) structures
}
Collapse
H01S 5/1032
. . .
{
Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
}
H01S 5/1035
. . . .
{
Forward coupled structures (DFC)
}
H01S 5/1039
. .
{
Details on the cavity length
}
H01S 5/1042
. .
{
Optical microcavities, e.g. cavity dimensions comparable to the wavelength
}
H01S 5/1046
. .
{
Comprising interactions between photons and plasmons, e.g. by a corrugated surface
}
H01S 5/105
. .
{
Comprising a photonic bandgap structure
}
Collapse
H01S 5/1053
. .
{
Comprising an active region having a varying composition or cross section in a specific direction
}
H01S 5/1057
. . .
{
varying composition along the optical axis
}
H01S 5/106
. . .
{
varying thickness along the optical axis
}
H01S 5/1064
. . .
{
varying width along the optical axis
}
H01S 5/1067
. . .
{
comprising nanoparticles
}
Collapse
. .
{
Ring-lasers
}
H01S 5/1075
. . .
{
Disk lasers with special modes, e.g. whispering gallery lasers
}
H01S 5/1078
. .
{
with means to control the spontaneous emission, e.g. reducing or reinjection
}
Collapse
H01S 5/1082
. .
{
with a special facet structure, e.g. structured, non planar, oblique
}
H01S 5/1085
. . .
{
Oblique facets
}
H01S 5/1089
. .
{
Unstable resonators
}
Collapse
H01S 5/1092
. .
{
Multi-wavelength lasing
}
H01S 5/1096
. . .
{
in a single cavity
}
Collapse
. .
the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers) ( H01S 5/18 takes precedence )
{
( forward coupled structures, i.e. DFC lasers, H01S 5/1028 )
}
H01S 5/1203
. . .
{
over only a part of the length of the active region
}
Collapse
H01S 5/1206
. . .
{
having a non constant or multiplicity of periods
}
H01S 5/1209
. . . .
{
Sampled grating
}
H01S 5/1212
. . . .
{
Chirped grating
}
Collapse
H01S 5/1215
. . . .
{
Multiplicity of periods
}
H01S 5/1218
. . . . .
{
in superstructured configuration, e.g. more than one period in an alternate sequence
}
H01S 5/1221
. . .
{
Detuning between Bragg wavelength and gain maximum
}
H01S 5/1225
. . .
{
with a varying coupling constant along the optical axis
}
H01S 5/1228
. . .
{
DFB lasers with a complex coupled grating, e.g. gain or loss coupling
}
H01S 5/1231
. . .
{
Grating growth or overgrowth details
}
H01S 5/1234
. . .
{
Actively induced grating, e.g. acoustically or electrically induced
}
H01S 5/1237
. . .
{
Lateral grating, i.e. grating only adjacent ridge or mesa
}
Collapse
H01S 5/124
. . .
{
incorporating phase shifts
}
H01S 5/1243
. . . .
{
by other means than a jump in the grating period, e.g. bent waveguides
}
H01S 5/1246
. . . .
{
plurality of phase shifts
}
H01S 5/125
. . .
Distributed Bragg reflector lasers (DBR-lasers)
Collapse
. .
External cavity lasers
{
( external cavity elements, their control or stabilisation H01S 3/08 , H01S 3/10 and H01S 3/13 )
}
NOTE
-
in this group external cavity elements correspond to elements inside the laser cavity but outside the monolithic semiconductor body. These elements correspond to intra cavity elements in H01S 3/00

Collapse
H01S 5/141
. . .
{
using a wavelength selective device, e.g. a grating or etalon ( H01S 5/146 takes precedence )
}
H01S 5/142
. . . .
{
which comprises an additional resonator
}
H01S 5/143
. . . .
{
Littman-Metcalf configuration, e.g. laser - grating - mirror
}
H01S 5/145
. . .
{
Phase conjugate mirrors
}
Collapse
H01S 5/146
. . .
{
using a fiber as external cavity
}
H01S 5/147
. . . .
{
having specially shaped fibre, e.g. lensed or tapered end portion
}
H01S 5/148
. . .
{
using a Talbot cavity
}
Collapse
H01S 5/16
. .
Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
H01S 5/162
. . .
{
with window regions made by diffusion or disordening of the active layer
}
H01S 5/164
. . .
{
with window regions comprising semiconductor material with a wider bandgap than the active layer
}
H01S 5/166
. . .
{
with window regions comprising non-semiconducting materials
}
H01S 5/168
. . .
{
with window regions comprising current blocking layers
}
Collapse
H01S 5/18
. .
Surface-emitting lasers (SE-lasers)
Collapse
H01S 5/183
. . .
having a vertical cavity (VCSE-lasers)
H01S 5/18302
. . . .
{
comprising an integrated optical modulator
}
H01S 5/18305
. . . .
{
with emission through the substrate, i.e. bottom emission
}
Collapse
H01S 5/18308
. . . .
{
having a special structure for lateral current or light confinement
}
Collapse
H01S 5/18311
. . . . .
{
using selective oxidation
}
H01S 5/18313
. . . . . .
{
by oxidizing at least one of the DBR layers
}
H01S 5/18316
. . . . .
{
Airgap confined
}
H01S 5/18319
. . . . .
{
comprising a periodical structure in lateral directions ( photonic crystals in semiconductor laser structures per se H01S 5/105 )
}
Collapse
H01S 5/18322
. . . . .
{
Position of the structure
}
H01S 5/18325
. . . . . .
{
Between active layer and substrate
}
H01S 5/18327
. . . . . .
{
Structure being part of a DBR ( H01S 5/18391 takes precedence )
}
Collapse
H01S 5/1833
. . . . . .
{
with more than one structure
}
H01S 5/18333
. . . . . . .
{
only above the active layer
}
H01S 5/18336
. . . . . . .
{
only below the active layer
}
H01S 5/18338
. . . . .
{
Non-circular shape of the structure
}
H01S 5/18341
. . . .
{
Intra-cavity contacts
}
Collapse
H01S 5/18344
. . . .
{
characterized by the mesa, e.g. dimensions or shape of the mesa
}
H01S 5/18347
. . . . .
{
Mesa comprising active layer
}
H01S 5/1835
. . . . .
{
Non-circular mesa
}
H01S 5/18352
. . . . .
{
Mesa with inclined sidewall
}
H01S 5/18355
. . . .
{
having a defined polarisation
}
H01S 5/18358
. . . .
{
containing spacer layers to adjust the phase of the light wave in the cavity
}
Collapse
H01S 5/18361
. . . .
{
Structure of the reflectors, e.g. hybrid mirrors
}
Collapse
H01S 5/18363
. . . . .
{
comprising air layers
}
H01S 5/18366
. . . . . .
{
Membrane DBR, i.e. a movable DBR on top of the VCSEL
}
Collapse
H01S 5/18369
. . . . .
{
based on dielectric materials
}
H01S 5/18372
. . . . . .
{
by native oxidation
}
H01S 5/18375
. . . . .
{
based on metal reflectors
}
H01S 5/18377
. . . . .
{
comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
}
H01S 5/1838
. . . . .
{
Reflector bonded by wafer fusion or by an intermediate compound
}
H01S 5/18383
. . . .
{
with periodic active regions at nodes or maxima of light intensity
}
Collapse
H01S 5/18386
. . . .
{
Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
}
H01S 5/18388
. . . . .
{
Lenses
}
H01S 5/18391
. . . . .
{
Aperiodic structuring to influence the near- or far-field distribution
}
H01S 5/18394
. . . . .
{
Apertures, e.g. defined by the shape of the upper electrode
}
H01S 5/18397
. . . .
{
Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
}
H01S 5/187
. . .
using a distributed Bragg reflector (SE-DBR-lasers)
Collapse
H01S 5/20
.
Structure or shape of the semi-conductor body to guide the optical wave;
{
Confining structures perpendicular to the optical axis, e.g. index- or gain-guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
}
Collapse
H01S 5/2004
. .
{
Confining in the direction perpendicular to the layer structure
}
Collapse
H01S 5/2009
. . .
{
electron barrier layers
}
H01S 5/2013
. . . .
{
MQW barrier reflection layers
}
Collapse
H01S 5/2018
. . .
{
Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
}
H01S 5/2022
. . . .
{
Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
}
H01S 5/2027
. . . .
{
Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
}
H01S 5/2031
. . . .
{
characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined band-gap discontinuities
}
H01S 5/2036
. .
{
Broad area laserse
}
Collapse
H01S 5/204
. .
{
Strongly index guided structures
}
H01S 5/2045
. . .
{
employing free standing waveguides or air gap confinement
}
H01S 5/205
. .
{
Antiguided structures
}
Collapse
H01S 5/2054
. .
{
Methods of obtaining the confinement
}
Collapse
H01S 5/2059
. . .
{
by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
}
H01S 5/2063
. . . .
{
obtained by particle bombardment
}
H01S 5/2068
. . . .
{
obtained by radiation treatment or annealing
}
H01S 5/2072
. . . .
{
obtained by vacancy induced diffusion
}
H01S 5/2077
. . .
{
using lateral bandgap control during growth, e.g. selective growth, mask induced
}
Collapse
H01S 5/2081
. . .
{
using special etching techniques
}
H01S 5/2086
. . . .
{
lateral etch control, e.g. mask induced
}
H01S 5/209
. . . .
{
special etch stop layers
}
H01S 5/2095
. . .
{
using melting or mass transport
}
Collapse
H01S 5/22
. .
having a ridge or stripe structure
H01S 5/2201
. . .
{
in a specific crystallographic orientation
}
H01S 5/2202
. . .
{
by making a groove in the upper laser structure
}
H01S 5/2203
. . .
{
with a transverse junction stripe (TJS) structure
}
Collapse
H01S 5/2205
. . .
{
comprising special burying or current confinement layers
}
Collapse
H01S 5/2206
. . . .
{
based on III-V materials
}
H01S 5/2207
. . . . .
{
GaAsP based
}
H01S 5/2209
. . . . .
{
GaInP based
}
H01S 5/221
. . . . .
{
containing aluminium
}
H01S 5/2211
. . . .
{
based on II-VI materials
}
H01S 5/2213
. . . .
{
based on polyimide or resin
}
Collapse
H01S 5/2214
. . . .
{
based on oxides or nitrides
}
H01S 5/2215
. . . . .
{
using native oxidation of semiconductor layers
}
H01S 5/2216
. . . . .
{
nitrides
}
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H01S 5/2218
. . . .
{
having special optical properties
}
H01S 5/2219
. . . . .
{
absorbing
}
H01S 5/222
. . . . .
{
having a refractive index lower than that of the cladding layers or outer guiding layers
}
Collapse
H01S 5/2222
. . . .
{
having special electric properties
}
H01S 5/2223
. . . . .
{
hetero barrier blocking layers, e.g. P-P or N-N
}
H01S 5/2224
. . . . .
{
semi-insulating semiconductors
}
H01S 5/2226
. . . . .
{
semiconductors with a specific doping
}
Collapse
H01S 5/2227
. . . . .
{
special thin layer sequence
}
H01S 5/2228
. . . . . .
{
quantum wells
}
Collapse
. . .
Buried stripe structure
{
( H01S 5/227 takes precedence )
}
H01S 5/2231
. . . .
{
with inner confining structure only between the active layer and the upper electrode
}
Collapse
H01S 5/2232
. . . .
{
with inner confining structure between the active layer and the lower electrode
}
Collapse
H01S 5/2234
. . . . .
{
having a structured substrate surface
}
H01S 5/2235
. . . . . .
{
with a protrusion
}
H01S 5/2237
. . . .
{
with a non-planar active layer
}
. . . .
{
with a terraced structure
}
Collapse
H01S 5/227
. . .
Buried mesa structure;
{
Striped active layer
}
H01S 5/2272
. . . .
{
grown by a mask induced selective growth
}
Collapse
H01S 5/2275
. . . .
{
mesa created by etching
}
H01S 5/2277
. . . . .
{
double channel planar buried heterostructure (DCPBH) laser
}
H01S 5/24
. .
having a grooved structure, e.g. V-grooved,
{
crescent active layer in groove, VSIS laser
}
Collapse
H01S 5/30
.
Structure or shape of the active region ; Materials used for the active region
Collapse
H01S 5/3004
. .
{
employing a field effect structure for inducing charge-carriers, e.g. FET
}
H01S 5/3009
. . .
{
MIS or MOS conffigurations
}
H01S 5/3013
. .
{
A(III)-B(V) compounds
}
H01S 5/3018
. .
{
A(II)-B(VI) compounds
}
H01S 5/3022
. .
{
A(IV)-B(VI) compounds
}
Collapse
H01S 5/3027
. .
{
IV compounds
}
Collapse
H01S 5/3031
. . .
{
Si
}
H01S 5/3036
. . . .
{
SiC
}
H01S 5/304
. . . .
{
porous Si
}
H01S 5/3045
. . .
{
diamond
}
Collapse
H01S 5/305
. .
{
characterised by the doping materials used in the laser structure
}
Collapse
H01S 5/3054
. . .
{
p-doping
}
H01S 5/3059
. . . .
{
in II-VI materials
}
H01S 5/3063
. . . .
{
using Mg
}
H01S 5/3068
. . .
{
deep levels
}
H01S 5/3072
. . .
{
Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
}
Collapse
H01S 5/3077
. . .
{
plane dependent doping
}
H01S 5/3081
. . . .
{
using amphoteric doping
}
Collapse
H01S 5/3086
. . .
{
doping of the active layer
}
H01S 5/309
. . . .
{
doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure ( Barriers in quantum wells per se H01S 5/3407 )
}
H01S 5/3095
. . .
{
Tunnel junction
}
Collapse
. .
comprising PN junctions, e.g. hetero- or double- heterostructures ( H01S 5/34 , H01S 5/36 take precedence )
H01S 5/3201
. . .
{
incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
}
Collapse
H01S 5/3202
. . .
{
grown on specifically orientated substrates, or using orientation dependent growth
}
H01S 5/3203
. . . .
{
on non-planar substrates to create thickness or compositional variations
}
H01S 5/3205
. . .
{
with an active layer having a graded composition in the growth direction
}
Collapse
H01S 5/3206
. . .
{
ordering or disordering the natural superlattice in ternary or quaternary materials
}
H01S 5/3207
. . . .
{
ordered active layer
}
H01S 5/3209
. . . .
{
disordered active layer
}
H01S 5/321
. . .
{
having intermediate bandgap layers
}
Collapse
H01S 5/3211
. . .
{
characterised by special cladding layers, e.g. details on band-discontinuities
}
H01S 5/3213
. . . .
{
asymmetric clading layers
}
H01S 5/3214
. . . .
{
comprising materials from other groups of the periodic system than the materials of the active layer, e.g. ZnSe claddings and GaAs active layer
}
H01S 5/3215
. . . .
{
graded composition cladding layers
}
H01S 5/3216
. . . .
{
quantum well or superlattice cladding layers
}
H01S 5/3218
. . . .
{
specially strained cladding layers, other than for strain compensation
}
H01S 5/3219
. . . .
{
explicitly Al-free cladding layers
}
H01S 5/322
. . .
{
type-II junctions
}
H01S 5/3222
. . .
{
in A(IV)-B(VI) compounds, e.g. PbSSe-laser
}
Collapse
H01S 5/3223
. . .
{
IV compounds
}
Collapse
H01S 5/3224
. . . .
{
Si
}
H01S 5/3226
. . . . .
{
SiC
}
H01S 5/3227
. . . . .
{
porous Si
}
H01S 5/3228
. . . .
{
diamond
}
Collapse
H01S 5/323
. . .
in A(III)-B(V) compounds, e.g alGaAs-laser,
{
InP-based laser
}
Collapse
H01S 5/32308
. . . .
{
emitting light at a wavelength less than 900 nm
}
H01S 5/32316
. . . . .
{
comprising only (Al)GaAs
}
H01S 5/32325
. . . . .
{
red laser based on InGaP
}
H01S 5/32333
. . . . .
{
based on InGaAsP
}
H01S 5/32341
. . . . .
{
blue laser based on GaN or GaP
}
Collapse
H01S 5/3235
. . . .
{
emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
}
Collapse
. . . . .
{
containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the band-gap srongly in a non-linear way by the bowing effect
}
H01S 5/32366
. . . . . .
{
(In)GaAs with small amount of N
}
H01S 5/32375
. . . . . .
{
In(As)N with small amount of P, or In(As)P with small amount of N
}
H01S 5/32383
. . . . . .
{
small amount of Thallum (TI) e.g. GaTIP
}
H01S 5/32391
. . . . .
{
based onIn(Ga)(As)P
}
H01S 5/327
. . .
in A(II)-B(VI) compounds, e.g. ZnCdSe-laser
Collapse
. .
comprising quantum well,
{
quantum wire, quantum box
}
or supperlattice structures, e.g. single quantum well lasers ( SQW lasers ) , multiple quantum well lasers ( MQW lasers ) , graded index separate confinement hetrostructure lasers ( GRINSCH lasers ) ( H01S 5/36 takes precedence )
Collapse
H01S 5/3401
. . .
{
having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
}
H01S 5/3402
. . . .
{
intersubband lasers, e.g. transitions within the conduction or valence bands
}
Collapse
H01S 5/3403
. . .
{
having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
}
H01S 5/3404
. . . .
{
influencing the polarisation
}
H01S 5/3406
. . . .
{
including strain compensation
}
H01S 5/3407
. . .
{
characterised by special barrier layers
}
H01S 5/3408
. . .
{
characterised by specially shaped wells, e.g. triangular
}
H01S 5/3409
. . .
{
special GRINSCH structures
}
Collapse
H01S 5/341
. . .
{
Structures having reduced dimensionality, e.g.quantum wires
}
H01S 5/3412
. . . .
{
quantum box or quantum dash
}
Collapse
H01S 5/3413
. . .
{
comprising partially disordered wells or barriers
}
H01S 5/3414
. . . .
{
by vacancy induced interdiffusion
}
Collapse
H01S 5/3415
. . .
{
containing details related to carrier capture times into wells or barriers
}
H01S 5/3416
. . . .
{
tunneling through barriers
}
Collapse
H01S 5/3418
. . .
{
using transitions from higher quantum levels
}
H01S 5/3419
. . . .
{
intersubband lasers, e.g. laser transitions within the conduction or valence bands in non unipolar structures
}
H01S 5/342
. . .
{
containing short period superlattices (SPS)
}
H01S 5/3421
. . .
{
layer structure of quantum wells to influence the near/far field
}
H01S 5/3422
. . .
{
comprising type-II quantum wells or superlattices
}
H01S 5/3424
. . .
{
comprising freestanding wells
}
H01S 5/3425
. . .
{
comprising couples wells or superlattices
}
H01S 5/3426
. . .
{
in A(IV)-B(VI) compounds, e.g. PbSSe-laser
}
H01S 5/3427
. . .
{
in IV compounds
}
H01S 5/3428
. . .
{
layer orientation perpendicular to the substrate
}
Collapse
. . .
in A(III)-B(V) compounds, e.g. AlGaAs-laser,
{
InP-based laser
}
H01S 5/34306
. . . .
{
emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
}
Collapse
H01S 5/34313
. . . .
{
with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
}
H01S 5/3432
. . . . .
{
the whole junction comprising only (AI)GaAs
}
H01S 5/34326
. . . .
{
with a well layer based on InGa(Al)P, e.g. red laser
}
H01S 5/34333
. . . .
{
with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
}
H01S 5/3434
. . . .
{
with a well layer comprising at least both As and P as V-compounds
}
Collapse
H01S 5/34346
. . . .
{
characterised by the materials of the barrier layers
}
H01S 5/34353
. . . . .
{
based on (AI)GaAs
}
H01S 5/3436
. . . . .
{
based on InGa(Al)P
}
H01S 5/34366
. . . . .
{
based on InGa(Al)AS
}
H01S 5/34373
. . . . .
{
based on InGa(Al)AsP
}
H01S 5/3438
. . . . .
{
based on In(Al)P
}
H01S 5/34386
. . . . .
{
explicitly Al-free
}
H01S 5/34393
. . . . .
{
not only based on A(III)-B(V) compounds
}
H01S 5/347
. . .
in A(II)-B(VI) compounds, e.g. ZnCdSe- laser
. .
comprising organic materials ( dye lasers H01S 3/213 )
Collapse
.
Arrangement of two or more semiconductor lasers, not provided for in groups H01S 5/02 to H01S 5/30 ( H01S 5/50 takes precedence )
. .
{
Injection locking
}
H01S 5/4012
. .
{
Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
}
H01S 5/4018
. .
{
Lasers electrically in series
}
Collapse
. .
{
Array arrangements, e.g. constituted by discrete laser diodes or laser bar ( H01S 5/42 takes precedence )
}
Collapse
H01S 5/4031
. . .
{
Edge-emitting structures
}
H01S 5/4037
. . . .
{
with active layers in more than one orientation
}
Collapse
H01S 5/4043
. . . .
{
with vertically stacked active layers
}
H01S 5/405
. . . . .
{
Two-dimensional arrays
}
H01S 5/4056
. . . .
{
emitting light in more than one direction
}
. . . .
{
with an external cavity or using internal filters, e.g. Talbot filters
}
H01S 5/4068
. . . .
{
with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
}
H01S 5/4075
. . .
{
Beam steering
}
H01S 5/4081
. . .
{
Near-or far field control
}
Collapse
H01S 5/4087
. . .
{
emitting more than one wavelength
}
H01S 5/4093
. . . .
{
Red, green and blue [RGB
}
generated directly by laser action or by a combination of laser action with nonlinear frequency conversion]
Collapse
H01S 5/42
. .
Arrays of surface emitting lasers
Collapse
H01S 5/423
. . .
{
having a vertical cavity
}
H01S 5/426
. . . .
{
Vertically stacked cavities
}
Collapse
.
Amplifier structures not provided for in groups H01S 5/02 to H01S 5/30 ( as repeaters in transmission systems H04B10/17 )
Collapse
H01S 5/5009
. .
{
the arrangement being polarisation-insensitive
}
H01S 5/5018
. . .
{
using two or more amplifiers or multiple passes through the same amplifier
}
H01S 5/5027
. .
{
Concatenated amplifiers, i.e. amplifiers in series or cascaded
}
H01S 5/5036
. .
{
the arrangement being polarisation-selective
}
H01S 5/5045
. .
{
the arrangement having a frequency filtering function
}
H01S 5/5054
. .
{
in which the wavelength is transformed by non-linear properties of the active medium, e.g. four wave mixing
}
Collapse
H01S 5/5063
. .
{
operating above threshold
}
H01S 5/5072
. . .
{
Gain clamping, i.e. stabilisation by saturation using a further mode or frequency
}
H01S 5/5081
. .
{
specifically standing wave amplifiers
}
H01S 5/509
. .
{
Wavelength converting amplifier, e.g. signal gating with a second beam using gain saturation
}
Collapse
H01S 2301/00
Functional characteristics
H01S 2301/02
.
ASE ( amplified spontaneous emission ) , noise ; Reduction thereof
H01S 2301/03
.
Suppression of nonlinear conversion, e.g. specific design to suppress for example stimulated brillouin scattering [SBS], mainly in optical fibres in combination with multimode pumping
H01S 2301/04
.
Gain spectral shaping, flattening
H01S 2301/06
.
Gain non-linearity, distortion ; Compensation thereof
Collapse
H01S 2301/08
.
Generation of pulses with special temporal shape or frequency spectrum
H01S 2301/085
. .
solitons
Collapse
H01S 2301/14
.
Semiconductor lasers with special structural design for lasing in a specific polarisation mode
H01S 2301/145
. .
TM polarisation
Collapse
H01S 2301/16
.
Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
H01S 2301/163
. .
Single longitudinal mode
H01S 2301/166
. .
Single transverse or lateral mode
Collapse
H01S 2301/17
.
Semiconductor lasers comprising special layers
H01S 2301/173
. .
The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
H01S 2301/176
. .
Specific passivation layers on surfaces other than the emission facet
Collapse
H01S 2301/18
.
Semiconductor lasers with special structural design for influencing the near- or far-field
H01S 2301/185
. .
for reduction of Astigmatism
Collapse
H01S 2301/20
.
Lasers with a special output beam profile or cross section, e.g. non-Gaussian
H01S 2301/203
. .
with at least one hole in the intensity distribution, e.g. annular or doughnut mode
H01S 2301/206
. .
Top hat profile
Collapse
H01S 2302/00
Amplification / lasing wavelength
NOTE
-
In group H01S 2302/00 and separated therefrom by a + sign the wavelength in nanometers (nnnn) is indicated.

H01S 2302/02
.
THz - lasers, i.e. lasers with emission in the wavelength range of typically 0.1 mm to 1 mm
H01S 2303/00
Pumping wavelength
NOTE
-
In group H01S 2303/00 and separated therefrom by a + sign the wavelength in nanometers (nnnn) is indicated.

Collapse
H01S 2304/00
Special growth methods for semiconductor lasers
Collapse
H01S 2304/02
.
MBE
H01S 2304/025
. .
MOMBE
H01S 2304/04
.
MOCVD or MOVPE
H01S 2304/06
.
LPE
H01S 2304/10
.
CBE
H01S 2304/12
.
Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
This page is owned by Office of Patent Classification.
Last Modified: 10/10/2013