Version: 2024.01
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CPC | COOPERATIVE PATENT CLASSIFICATION | |||
| B81C | PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J 13/02; processes or apparatus peculiar to the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive element per se H10N 30/01) [2023-08] NOTES
|
B81C 1/00 | Manufacture or treatment of devices or systems in or on a substrate (B81C 3/00 takes precedence) [2013-01] |
B81C 1/00007 | . | {Assembling automatically hinged components, i.e. self-assembly processes (self-assembly mechanisms B81B 7/0003)} [2013-01] |
B81C 1/00015 | . | {for manufacturing microsystems} [2017-08] |
B81C 1/00023 | . . | {without movable or flexible elements (array of static structures for functionalising surfaces in B81C 1/00206; manufacture of MEMS devices for specific applications, see relevant places, e.g. microreactors B01J 19/0093, lab-on-chip B01L 3/5027, micromixers B01F 33/30)} [2022-01] |
B81C 1/00031 | . . . | {Regular or irregular arrays of nanoscale structures, e.g. etch mask layer (photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F 7/00; lithographic processes for making patterned surfaces using printing and stamping G03F 7/0002)} [2013-01] |
B81C 1/00039 | . . . | {Anchors} [2013-01] |
B81C 1/00047 | . . . | {Cavities} [2013-01] |
B81C 1/00055 | . . . | {Grooves} [2013-01] |
B81C 1/00063 | . . . . | {Trenches} [2013-01] |
B81C 1/00071 | . . . . | {Channels} [2013-01] |
B81C 1/00079 | . . . . | {Grooves not provided for in groups B81C 1/00063 - B81C 1/00071} [2016-05] |
B81C 1/00087 | . . . | {Holes} [2013-01] |
B81C 1/00095 | . . . | {Interconnects} [2013-01] |
B81C 1/00103 | . . . | {Structures having a predefined profile, e.g. sloped or rounded grooves} [2013-01] |
B81C 1/00111 | . . . | {Tips, pillars, i.e. raised structures (microneedles A61M 37/0015)} [2013-01] |
B81C 1/00119 | . . . | {Arrangement of basic structures like cavities or channels, e.g. suitable for microfluidic systems} [2013-01] |
B81C 1/00126 | . . . | {Static structures not provided for in groups B81C 1/00031 - B81C 1/00119} [2016-05] |
B81C 1/00134 | . . | {comprising flexible or deformable structures (manufacture of MEMS devices for specific applications, see relevant places, e.g. gyroscopes G01C 19/5719, pressure sensors G01L 9/0042, accelerometers G01P 15/0802, acoustic transducers or diaphragms therefor H04R 31/00)} [2013-01] |
B81C 1/00142 | . . . | {Bridges (deformable micromirrors G02B 26/0841)} [2017-08] |
B81C 1/0015 | . . . | {Cantilevers (switches using MEMS H01H 1/0036; electrostatic relays using micromechanics H01H 59/0009; microelectro-mechanical resonators H03H 9/02244)} [2017-08] |
B81C 1/00158 | . . . | {Diaphragms, membranes (manufacture process for semi-permeable inorganic membranes B01D 67/0039)} [2013-01] |
B81C 1/00166 | . . . | {Electrodes} [2013-01] |
B81C 1/00174 | . . . | {See-saws} [2013-01] |
B81C 1/00182 | . . . | {Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer} [2013-01] |
B81C 1/0019 | . . . | {Flexible or deformable structures not provided for in groups B81C 1/00142 - B81C 1/00182} [2016-05] |
B81C 1/00198 | . . | {comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements} [2013-01] |
B81C 1/00206 | . . | {Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties} [2013-01] |
B81C 1/00214 | . . | {Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices} [2017-08] |
B81C 1/00222 | . . | {Integrating an electronic processing unit with a micromechanical structure} [2013-01] |
B81C 1/0023 | . . . | {Packaging together an electronic processing unit die and a micromechanical structure die (MEMS packages B81B 7/0032; MEMS packaging processes B81C 1/00261)} [2013-01] |
B81C 1/00238 | . . . | {Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure} [2013-01] |
B81C 1/00246 | . . . | {Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate} [2013-01] |
B81C 1/00253 | . . . | {Processes for integrating an electronic processing unit with a micromechanical structure not provided for in B81C 1/0023 - B81C 1/00246} [2016-05] |
B81C 1/00261 | . . | {Processes for packaging MEMS devices (MEMS packages B81B 7/0032, packaging of smart-MEMS B81C 1/0023)} [2013-01] |
B81C 1/00269 | . . . | {Bonding of solid lids or wafers to the substrate} [2013-01] |
B81C 1/00277 | . . . | {for maintaining a controlled atmosphere inside of the cavity containing the MEMS} [2013-01] |
B81C 1/00285 | . . . . | {using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters} [2013-01] |
B81C 1/00293 | . . . . | {maintaining a controlled atmosphere with processes not provided for in B81C 1/00285} [2013-01] |
B81C 1/00301 | . . . | {Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias} [2013-01] |
B81C 1/00309 | . . . | {suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound} [2016-08] |
B81C 1/00317 | . . . | {Packaging optical devices} [2013-01] |
B81C 1/00325 | . . . | {for reducing stress inside of the package structure} [2013-01] |
B81C 1/00333 | . . . | {Aspects relating to packaging of MEMS devices, not covered by groups B81C 1/00269 - B81C 1/00325} [2016-05] |
B81C 1/00341 | . . | {Processes for manufacturing microsystems not provided for in groups B81C 1/00023 - B81C 1/00261} [2017-08] |
B81C 1/00349 | . | {Creating layers of material on a substrate} [2013-01] |
B81C 1/00357 | . . | {involving bonding one or several substrates on a non-temporary support, e.g. another substrate} [2013-01] |
B81C 1/00365 | . . | {having low tensile stress between layers} [2013-01] |
B81C 1/00373 | . . | {Selective deposition, e.g. printing or microcontact printing} [2017-08] |
B81C 1/0038 | . . | {Processes for creating layers of materials not provided for in groups B81C 1/00357 - B81C 1/00373} [2016-05] |
B81C 1/00388 | . | {Etch mask forming} [2013-01] |
B81C 1/00396 | . . | {Mask characterised by its composition, e.g. multilayer masks} [2013-01] |
B81C 1/00404 | . . | {Mask characterised by its size, orientation or shape} [2013-01] |
B81C 1/00412 | . . | {Mask characterised by its behaviour during the etching process, e.g. soluble masks} [2013-01] |
B81C 1/0042 | . . | {Compensation masks in orientation dependent etching} [2013-01] |
B81C 1/00428 | . . | {Etch mask forming processes not provided for in groups B81C 1/00396 - B81C 1/0042} [2016-05] |
B81C 1/00436 | . | {Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate} [2013-01] |
B81C 1/00444 | . . | {Surface micromachining, i.e. structuring layers on the substrate} [2013-01] |
B81C 1/0046 | . . . | {using stamping, e.g. imprinting (nanoimprinting for making etch masks G03F 7/0002)} [2017-08] |
B81C 1/00468 | . . . | {Releasing structures} [2013-01] |
B81C 1/00476 | . . . . | {removing a sacrificial layer (B81C 1/00912 takes precedence)} [2013-01] |
B81C 1/00484 | . . . . | {Processes for releasing structures not provided for in group B81C 1/00476} [2013-01] |
B81C 1/00492 | . . . | {Processes for surface micromachining not provided for in groups B81C 1/0046 - B81C 1/00484} [2016-05] |
B81C 1/005 | . . | {Bulk micromachining} [2013-01] |
B81C 1/00507 | . . . | {Formation of buried layers by techniques other than deposition, e.g. by deep implantation of elements (SIMOX techniques H01L 21/762)} [2013-01] |
B81C 1/00515 | . . . | {Bulk micromachining techniques not provided for in B81C 1/00507} [2013-01] |
B81C 1/00523 | . . | {Etching material} [2013-01] |
B81C 1/00531 | . . . | {Dry etching} [2013-01] |
B81C 1/00539 | . . . | {Wet etching} [2013-01] |
B81C 1/00547 | . . . | {Etching processes not provided for in groups B81C 1/00531 - B81C 1/00539} [2016-05] |
B81C 1/00555 | . . | {Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity (B81C 1/00023 - B81C 1/0019 take precedence)} [2016-05] |
B81C 1/00563 | . . . | {Avoid or control over-etching} [2013-01] |
B81C 1/00571 | . . . . | {Avoid or control under-cutting} [2013-01] |
B81C 1/00579 | . . . . | {Avoid charge built-up} [2013-01] |
B81C 1/00587 | . . . . | {Processes for avoiding or controlling over-etching not provided for in B81C 1/00571 - B81C 1/00579} [2016-05] |
B81C 1/00595 | . . . | {Control etch selectivity} [2013-01] |
B81C 1/00603 | . . . | {Aligning features and geometries on both sides of a substrate, e.g. when double side etching} [2013-01] |
B81C 1/00611 | . . . |
B81C 1/00619 | . . . | {Forming high aspect ratio structures having deep steep walls} [2013-01] |
B81C 1/00626 | . . . | {Processes for achieving a desired geometry not provided for in groups B81C 1/00563 - B81C 1/00619} [2016-05] |
B81C 1/00634 | . . | {Processes for shaping materials not provided for in groups B81C 1/00444 - B81C 1/00626} [2016-05] |
B81C 1/00642 | . | {for improving the physical properties of a device} [2013-01] |
B81C 1/0065 | . . | {Mechanical properties} [2013-01] |
B81C 1/00658 | . . . | {Treatments for improving the stiffness of a vibrating element} [2013-01] |
B81C 1/00666 | . . . | {Treatments for controlling internal stress or strain in MEMS structures} [2013-01] |
B81C 1/00674 | . . . | {Treatments for improving wear resistance} [2013-01] |
B81C 1/00682 | . . . | {Treatments for improving mechanical properties, not provided for in B81C 1/00658 - B81C 1/0065} [2016-05] |
B81C 1/0069 | . . | {Thermal properties, e.g. improve thermal insulation} [2013-01] |
B81C 1/00698 | . . | {Electrical characteristics, e.g. by doping materials} [2013-01] |
B81C 1/00706 | . . | {Magnetic properties} [2013-01] |
B81C 1/00714 | . . | {Treatment for improving the physical properties not provided for in groups B81C 1/0065 - B81C 1/00706} [2016-05] |
B81C 1/00777 | . | {Preserve existing structures from alteration, e.g. temporary protection during manufacturing} [2013-01] |
B81C 1/00785 | . . | {Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching (B81C 1/00563 - B81C 1/00595 take precedence)} [2016-05] |
B81C 1/00793 | . . . | {Avoid contamination, e.g. absorption of impurities or oxidation} [2013-01] |
B81C 1/00801 | . . . | {Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer (B81C 1/00595, B81C 1/00468 take precedence)} [2013-01] |
B81C 1/00809 | . . . | {Methods to avoid chemical alteration not provided for in groups B81C 1/00793 - B81C 1/00801} [2016-05] |
B81C 1/00817 | . . | {Avoid thermal destruction} [2013-01] |
B81C 1/00825 | . . | {Protect against mechanical threats, e.g. against shocks, or residues (B81C 1/00261 take precedence)} [2013-01] |
B81C 1/00833 | . . | {Methods for preserving structures not provided for in groups B81C 1/00785 - B81C 1/00825} [2016-05] |
B81C 1/00841 | . | {Cleaning during or after manufacture (cleaning of semiconductor devices H01L 21/306)} [2013-01] |
B81C 1/00849 | . . | {during manufacture} [2013-01] |
B81C 1/00857 | . . | {after manufacture, e.g. back-end of the line process} [2013-01] |
B81C 1/00865 | . | {Multistep processes for the separation of wafers into individual elements} [2013-01] |
B81C 1/00873 | . . | {characterised by special arrangements of the devices, allowing an easier separation} [2013-01] |
B81C 1/0088 | . . | {Separation allowing recovery of the substrate or a part of the substrate, e.g. epitaxial lift-off} [2013-01] |
B81C 1/00888 | . . | {Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving} [2013-01] |
B81C 1/00896 | . . | {Temporary protection during separation into individual elements} [2013-01] |
B81C 1/00904 | . . | {Multistep processes for the separation of wafers into individual elements not provided for in groups B81C 1/00873 - B81C 1/00896} [2016-05] |
B81C 1/00912 | . | {Treatments or methods for avoiding stiction of flexible or moving parts of MEMS} [2013-01] |
B81C 1/0092 | . . | {For avoiding stiction during the manufacturing process of the device, e.g. during wet etching} [2013-01] |
B81C 1/00928 | . . . | {Eliminating or avoiding remaining moisture after the wet etch release of the movable structure} [2013-01] |
B81C 1/00936 | . . . | {Releasing the movable structure without liquid etchant} [2013-01] |
B81C 1/00944 | . . . | {Maintaining a critical distance between the structures to be released} [2013-01] |
B81C 1/00952 | . . . | {Treatments or methods for avoiding stiction during the manufacturing process not provided for in groups B81C 1/00928 - B81C 1/00944} [2016-05] |
B81C 1/0096 | . . | {For avoiding stiction when the device is in use, i.e. after manufacture has been completed} [2013-01] |
B81C 1/00968 | . . . | {Methods for breaking the stiction bond} [2013-01] |
B81C 1/00976 | . . . | {Control methods for avoiding stiction, e.g. controlling the bias voltage} [2013-01] |
B81C 1/00984 | . . . | {Methods for avoiding stiction when the device is in use not provided for in groups B81C 1/00968 - B81C 1/00976} [2016-05] |
B81C 1/00992 | . . | {Treatments or methods for avoiding stiction of flexible or moving parts of MEMS not provided for in groups B81C 1/0092 - B81C 1/00984} [2016-05] |
B81C 3/00 | Assembling of devices or systems from individually processed components [2013-01] |
B81C 3/001 | . | {Bonding of two components} [2013-01] |
B81C 3/002 | . | {Aligning microparts} [2017-08] |
B81C 3/004 | . . | {Active alignment, i.e. moving the elements in response to the detected position of the elements using internal or external actuators} [2013-01] |
B81C 3/005 | . . | {Passive alignment, i.e. without a detection of the position of the elements or using only structural arrangements or thermodynamic forces} [2013-01] |
B81C 3/007 | . . | {Methods for aligning microparts not provided for in groups B81C 3/004 - B81C 3/005} [2017-08] |
B81C 3/008 | . | {Aspects related to assembling from individually processed components, not covered by groups B81C 3/001 - B81C 3/002} [2016-05] |
B81C 99/00 | Subject matter not provided for in other groups of this subclass [2013-01] |
B81C 99/0005 | . | {Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same} [2017-08] |
B81C 99/001 | . . | {for cutting, cleaving or grinding} [2013-01] |
B81C 99/0015 | . . | {for microextrusion (extrusion heads in general B29C 48/30)} [2019-02] |
B81C 99/002 | . . | {Apparatus for assembling MEMS, e.g. micromanipulators (micromanipulators per se B25J 7/00)} [2017-08] |
B81C 99/0025 | . . | {Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems not provided for in B81C 99/001 - B81C 99/002} [2017-08] |
B81C 99/003 | . | {Characterising MEMS devices, e.g. measuring and identifying electrical or mechanical constants} [2013-01] |
B81C 99/0035 | . | {Testing} [2013-01] |
B81C 99/004 | . . | {during manufacturing} [2013-01] |
B81C 99/0045 | . . | {End test of the packaged device} [2013-01] |
B81C 99/005 | . . | {Test apparatus} [2013-01] |
B81C 99/0055 | . | {Manufacturing logistics} [2013-01] |
B81C 99/006 | . . | {Design; Simulation} [2013-01] |
B81C 99/0065 | . . | {Process control; Yield prediction} [2013-01] |
B81C 99/007 | . . | {Marking} [2013-01] |
B81C 99/0075 | . | {Manufacture of substrate-free structures} [2013-01] |
B81C 99/008 | . . | {separating the processed structure from a mother substrate} [2013-01] |
B81C 99/0085 | . . | {using moulds and master templates, e.g. for hot-embossing} [2013-01] |
B81C 99/009 | . . | {Manufacturing the stamps or the moulds} [2013-01] |
B81C 99/0095 | . . | {Aspects relating to the manufacture of substrate-free structures, not covered by groups B81C 99/008 - B81C 99/009} [2016-05] |
B81C 2201/00 | Manufacture or treatment of microstructural devices or systems [2017-08] |
B81C 2201/01 | . | in or on a substrate [2013-01] |
B81C 2201/0101 | . . | Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning [2013-01] |
B81C 2201/0102 | . . . | Surface micromachining [2013-01] |
B81C 2201/0104 | . . . . | Chemical-mechanical polishing [CMP] [2013-01] |
B81C 2201/0105 | . . . . | Sacrificial layer [2013-01] |
B81C 2201/0107 | . . . . . | Sacrificial metal [2013-01] |
B81C 2201/0108 | . . . . . | Sacrificial polymer, ashing of organics [2013-01] |
B81C 2201/0109 | . . . . . | Sacrificial layers not provided for in B81C 2201/0107 - B81C 2201/0108 [2016-05] |
B81C 2201/0111 | . . . | Bulk micromachining [2013-01] |
B81C 2201/0112 | . . . . | Bosch process [2013-01] |
B81C 2201/0114 | . . . . | Electrochemical etching, anodic oxidation [2013-01] |
B81C 2201/0115 | . . . . | Porous silicon [2013-01] |
B81C 2201/0116 | . . . . | Thermal treatment for structural rearrangement of substrate atoms, e.g. for making buried cavities [2013-01] |
B81C 2201/0118 | . . . | Processes for the planarization of structures [2013-01] |
B81C 2201/0119 | . . . . | involving only addition of materials, i.e. additive planarization [2013-01] |
B81C 2201/0121 | . . . . | involving addition of material followed by removal of parts of said material, i.e. subtractive planarization [2013-01] |
B81C 2201/0122 | . . . . | Selective addition [2013-01] |
B81C 2201/0123 | . . . . | Selective removal [2013-01] |
B81C 2201/0125 | . . . . | Blanket removal, e.g. polishing [2013-01] |
B81C 2201/0126 | . . . . | Processes for the planarization of structures not provided for in B81C 2201/0119 - B81C 2201/0125 [2016-05] |
B81C 2201/0128 | . . . | Processes for removing material [2013-01] |
B81C 2201/0129 | . . . . | Diamond turning [2013-01] |
B81C 2201/013 | . . . . | Etching [2013-01] |
B81C 2201/0132 | . . . . . | Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling [2013-01] |
B81C 2201/0133 | . . . . . | Wet etching [2013-01] |
B81C 2201/0135 | . . . . . | Controlling etch progression [2013-01] |
B81C 2201/0136 | . . . . . . | by doping limited material regions [2013-01] |
B81C 2201/0138 | . . . . . . | Monitoring physical parameters in the etching chamber, e.g. pressure, temperature or gas composition [2013-01] |
B81C 2201/0139 | . . . . . . | with the electric potential of an electrochemical etching [2013-01] |
B81C 2201/014 | . . . . . . | by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal [2013-01] |
B81C 2201/0142 | . . . . . . | Processes for controlling etch progression not provided for in B81C 2201/0136 - B81C 2201/014 [2016-05] |
B81C 2201/0143 | . . . . | Focussed beam, i.e. laser, ion or e-beam [2013-01] |
B81C 2201/0145 | . . . . | Spark erosion [2013-01] |
B81C 2201/0146 | . . . . | Processes for removing material not provided for in B81C 2201/0129 - B81C 2201/0145 [2016-05] |
B81C 2201/0147 | . . . | Film patterning [2013-01] |
B81C 2201/0149 | . . . . | Forming nanoscale microstructures using auto-arranging or self-assembling material [2013-01] |
B81C 2201/015 | . . . . | Imprinting [2013-01] |
B81C 2201/0152 | . . . . . | Step and Flash imprinting, UV imprinting [2013-01] |
B81C 2201/0153 | . . . . . | Imprinting techniques not provided for in B81C 2201/0152 [2013-01] |
B81C 2201/0154 | . . . . | other processes for film patterning not provided for in B81C 2201/0149 - B81C 2201/015 [2016-05] |
B81C 2201/0156 | . . . | Lithographic techniques [2013-01] |
B81C 2201/0157 | . . . . | Gray-scale mask technology [2013-01] |
B81C 2201/0159 | . . . . | Lithographic techniques not provided for in B81C 2201/0157 [2013-01] |
B81C 2201/016 | . . . | Passivation [2013-01] |
B81C 2201/0161 | . . | Controlling physical properties of the material [2013-01] |
B81C 2201/0163 | . . . | Controlling internal stress of deposited layers [2013-01] |
B81C 2201/0164 | . . . . | by doping the layer [2013-01] |
B81C 2201/0166 | . . . . | by ion implantation [2013-01] |
B81C 2201/0167 | . . . . | by adding further layers of materials having complementary strains, i.e. compressive or tensile strain [2013-01] |
B81C 2201/0169 | . . . . | by post-annealing [2013-01] |
B81C 2201/017 | . . . . | Methods for controlling internal stress of deposited layers not provided for in B81C 2201/0164 - B81C 2201/0169 [2016-05] |
B81C 2201/0171 | . . . | Doping materials [2013-01] |
B81C 2201/0173 | . . . . | Thermo-migration of impurities from a solid, e.g. from a doped deposited layer [2013-01] |
B81C 2201/0174 | . . | for making multi-layered devices, film deposition or growing [2013-01] |
B81C 2201/0176 | . . . | Chemical vapour Deposition [2013-01] |
B81C 2201/0177 | . . . . | Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy [2013-01] |
B81C 2201/0178 | . . . . | Oxidation [2013-01] |
B81C 2201/018 | . . . . | Plasma polymerization, i.e. monomer or polymer deposition [2013-01] |
B81C 2201/0181 | . . . | Physical Vapour Deposition [PVD], i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology [2013-01] |
B81C 2201/0183 | . . . | Selective deposition [2013-01] |
B81C 2201/0184 | . . . . | Digital lithography, e.g. using an inkjet print-head [2013-01] |
B81C 2201/0185 | . . . . | Printing, e.g. microcontact printing [2017-08] |
B81C 2201/0187 | . . . . | Controlled formation of micro- or nanostructures using a template positioned on a substrate [2013-01] |
B81C 2201/0188 | . . . . | Selective deposition techniques not provided for in B81C 2201/0184 - B81C 2201/0187 [2016-05] |
B81C 2201/019 | . . . | Bonding or gluing multiple substrate layers [2013-01] |
B81C 2201/0191 | . . . | Transfer of a layer from a carrier wafer to a device wafer [2013-01] |
B81C 2201/0192 | . . . . | by cleaving the carrier wafer [2013-01] |
B81C 2201/0194 | . . . . | the layer being structured [2013-01] |
B81C 2201/0195 | . . . . | the layer being unstructured [2013-01] |
B81C 2201/0197 | . . . | Processes for making multi-layered devices not provided for in groups B81C 2201/0176 - B81C 2201/0192 [2016-05] |
B81C 2201/0198 | . . | for making a masking layer [2013-01] |
B81C 2201/03 | . | Processes for manufacturing substrate-free structures [2013-01] |
B81C 2201/032 | . . | LIGA process [2013-01] |
B81C 2201/034 | . . | Moulding [2013-01] |
B81C 2201/036 | . . | Hot embossing [2013-01] |
B81C 2201/038 | . . | Processes for manufacturing substrate-free structures not provided for in B81C 2201/034 - B81C 2201/036 [2016-05] |
B81C 2201/05 | . | Temporary protection of devices or parts of the devices during manufacturing [2013-01] |
B81C 2201/053 | . . | Depositing a protective layers [2013-01] |
B81C 2201/056 | . . | Releasing structures at the end of the manufacturing process [2013-01] |
B81C 2201/11 | . | Treatments for avoiding stiction of elastic or moving parts of MEMS [2013-01] |
B81C 2201/112 | . . | Depositing an anti-stiction or passivation coating, e.g. on the elastic or moving parts [2013-01] |
B81C 2201/115 | . . | Roughening a surface [2013-01] |
B81C 2201/117 | . . | Using supercritical fluid, e.g. carbon dioxide, for removing sacrificial layers [2013-01] |
B81C 2203/00 | Forming microstructural systems [2017-08] |
B81C 2203/01 | . | Packaging MEMS [2013-01] |
B81C 2203/0109 | . . | Bonding an individual cap on the substrate [2013-01] |
B81C 2203/0118 | . . | Bonding a wafer on the substrate, i.e. where the cap consists of another wafer [2013-01] |
B81C 2203/0127 | . . | Using a carrier for applying a plurality of packaging lids to the system wafer [2013-01] |
B81C 2203/0136 | . . | Growing or depositing of a covering layer [2013-01] |
B81C 2203/0145 | . . | Hermetically sealing an opening in the lid [2013-01] |
B81C 2203/0154 | . . | Moulding a cap over the MEMS device [2013-01] |
B81C 2203/0163 | . . | Reinforcing a cap, e.g. with ribs [2013-01] |
B81C 2203/0172 | . . | Seals [2013-01] |
B81C 2203/0181 | . . . | Using microheaters for bonding the lid [2017-08] |
B81C 2203/019 | . . . | characterised by the material or arrangement of seals between parts [2013-01] |
B81C 2203/03 | . | Bonding two components [2013-01] |
B81C 2203/031 | . . | Anodic bondings [2013-01] |
B81C 2203/032 | . . | Gluing [2013-01] |
B81C 2203/033 | . . | Thermal bonding [2013-01] |
B81C 2203/035 | . . . | Soldering [2013-01] |
B81C 2203/036 | . . . | Fusion bonding [2013-01] |
B81C 2203/037 | . . . | Thermal bonding techniques not provided for in B81C 2203/035 - B81C 2203/036 [2016-05] |
B81C 2203/038 | . . | Bonding techniques not provided for in B81C 2203/031 - B81C 2203/037 [2016-05] |
B81C 2203/05 | . | Aligning components to be assembled [2013-01] |
B81C 2203/051 | . . | Active alignment, e.g. using internal or external actuators, magnets, sensors, marks or marks detectors [2013-01] |
B81C 2203/052 | . . | Passive alignment, i.e. using only structural arrangements or thermodynamic forces without an internal or external apparatus [2013-01] |
B81C 2203/054 | . . . | using structural alignment aids, e.g. spacers, interposers, male/female parts, rods or balls [2013-01] |
B81C 2203/055 | . . . | using the surface tension of fluid solder to align the elements [2013-01] |
B81C 2203/057 | . . . | Passive alignment techniques not provided for in B81C 2203/054 - B81C 2203/055 [2016-05] |
B81C 2203/058 | . . | Aligning components using methods not provided for in B81C 2203/051 - B81C 2203/052 [2016-05] |
B81C 2203/07 | . | Integrating an electronic processing unit with a micromechanical structure [2013-01] |
B81C 2203/0707 | . . | Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure [2013-01] |
B81C 2203/0714 | . . . | Forming the micromechanical structure with a CMOS process [2013-01] |
B81C 2203/0721 | . . . | Forming the micromechanical structure with a low-temperature process (B81C 2203/0735 takes precedence) [2013-01] |
B81C 2203/0728 | . . . | Pre-CMOS, i.e. forming the micromechanical structure before the CMOS circuit [2013-01] |
B81C 2203/0735 | . . . | Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit [2013-01] |
B81C 2203/0742 | . . . | Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit [2013-01] |
B81C 2203/075 | . . . | the electronic processing unit being integrated into an element of the micromechanical structure [2013-01] |
B81C 2203/0757 | . . . | Topology for facilitating the monolithic integration [2013-01] |
B81C 2203/0764 | . . . . | Forming the micromechanical structure in a groove [2013-01] |
B81C 2203/0771 | . . . . | Stacking the electronic processing unit and the micromechanical structure [2013-01] |
B81C 2203/0778 | . . . . | Topology for facilitating the monolithic integration not provided for in B81C 2203/0764 - B81C 2203/0771 [2016-05] |
B81C 2203/0785 | . . | Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates [2013-01] |
B81C 2203/0792 | . . . | Forming interconnections between the electronic processing unit and the micromechanical structure [2013-01] |
B81C 2900/00 | Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems [2017-08] |
B81C 2900/02 | . | Microextrusion heads [2017-08] |