CPC Scheme - H10P GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

Version: 2026.01

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			CPC	COOPERATIVE PATENT CLASSIFICATION
			H10P	GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 [2026-01] NOTES This subclass covers processes or apparatus specially adapted for the manufacture or treatment of devices, or parts thereof, covered by class H10, which are generically applicable to these devices. Attention is drawn to the following: a. processes or apparatus specially adapted for the manufacture or treatment of devices, or parts thereof, which are covered by a single subclass of H10B - H10N, are classified in the subclass in question. For example, the manufacture of a transistor is classified in subclass H10D; b. processes or apparatus specially adapted for the manufacture or treatment of generic packages, interconnections, connectors or other constructional details of devices, which are covered by subclass H10W, are classified in the subclass in question. For example, the formation of a copper pillar bump connector is classified in subclass H10W.

Building up of layers, structures or materials [2026-01]

H10P 10/00

Bonding of wafers, substrates or parts of devices [2026-01]

NOTES

This group covers bonding of wafers or substrates either
- (i) before the step of making of any interconnections or (ii) before the step of packaging of devices, whichever step comes first.
Attention is drawn to the following:
- aspects of bonding involving chips, package parts or interconnections, e.g. chip-on-chip bonding or chip-on-wafer bonding, are classified in subclass H10W, e.g. in group H10W 80/00.

WARNING

Group H10P 10/00 is impacted by reclassification into groups H10P 14/00 and H10P 95/00.
Groups H10P 10/00, H10P 14/00 and H10P 95/00 should be considered in order to perform a complete search.

H10P 10/12

{Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates (preparing SOI wafers using bonding H10P 90/1914)} [2026-01]

WARNING

Group H10P 10/12 is incomplete pending reclassification of documents from group H10P 90/00. Group H10P 10/12 is also impacted by reclassification into groups H10P 10/126, H10P 10/128 - H10P 10/1285, H10P 54/52, H10P 56/00, H10P 90/1914 and H10P 90/1916.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 10/126

. .

{characterised by the composition of the bonding layer, e.g. dopant concentration or stoichiometry} [2026-01]

WARNING

Group H10P 10/126 is incomplete pending reclassification of documents from groups H10P 10/12, H10P 90/1914 and H10P 90/1916.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 10/128

. .

{by direct semiconductor to semiconductor bonding} [2026-01]

WARNING

Groups H10P 10/128 and H10P 10/1285 are incomplete pending reclassification of documents from groups H10P 10/12, H10P 90/1914 and H10P 90/1916.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 10/1285

. . .

{by bonding laterally separated doped regions to each other} [2026-01]

H10P 10/14

{Bonding of semiconductor wafers to insulating substrates} [2026-01]

WARNING

Group H10P 10/14 is incomplete pending reclassification of documents from groups H10P 90/1914 and H10P 90/1916.
Groups H10P 90/1914, H10P 90/1916 and H10P 10/14 should be considered in order to perform a complete search.

H10P 14/00

Formation of materials, e.g. in the shape of layers or pillars [2026-01]

WARNING

Group H10P 14/00 is incomplete pending reclassification of documents from group H10P 10/00.
Groups H10P 10/00 and H10P 14/00 should be considered in order to perform a complete search.

H10P 14/20

of semiconductor materials [2026-01]

H10P 14/203

. .

{using transformation of metal, e.g. oxidation or nitridation} [2026-01]

H10P 14/22

. .

using physical deposition, e.g. vacuum deposition or sputtering [2026-01]

H10P 14/24

. .

using chemical vapour deposition [CVD] [2026-01]

H10P 14/26

. .

using liquid deposition [2026-01]

H10P 14/263

. . .

{using melted materials} [2026-01]

H10P 14/265

. . .

{using solutions} [2026-01]

H10P 14/27

. .

{using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials} [2026-01]

H10P 14/271

. . .

{characterised by the preparation of substrate for selective deposition} [2026-01]

H10P 14/272

. . . .

{using mask materials other than SiO₂ or SiN} [2026-01]

H10P 14/274

. . . .

{using seed materials} [2026-01]

H10P 14/276

. . .

{Lateral overgrowth} [2026-01]

H10P 14/278

. . . .

{Pendeoepitaxy} [2026-01]

H10P 14/279

. . .

{Vapour-liquid-solid growth} [2026-01]

H10P 14/29

. .

{characterised by the substrates} [2026-01]

WARNING

Group H10P 14/29 is impacted by reclassification into groups H10P 14/2924 - H10P 14/2925 and H10P 14/2926.
Groups H10P 14/29, H10P 14/2924 - H10P 14/2925 and H10P 14/2926 should be considered in order to perform a complete search.

H10P 14/2901

. . .

{Materials} [2026-01]

H10P 14/2902

. . . .

{being Group IVA materials} [2026-01]

H10P 14/2903

. . . . .

{Carbon, e.g. diamond-like carbon} [2026-01]

H10P 14/2904

. . . . .

{Silicon carbide} [2026-01]

H10P 14/2905

. . . . .

{Silicon, silicon germanium or germanium} [2026-01]

H10P 14/2906

. . . . .

{including tin} [2026-01]

H10P 14/2907

. . . .

{being Group IIIA-VA materials} [2026-01]

H10P 14/2908

. . . . .

{Nitrides} [2026-01]

H10P 14/2909

. . . . .

{Phosphides} [2026-01]

H10P 14/2911

. . . . .

{Arsenides} [2026-01]

H10P 14/2912

. . . . .

{Antimonides} [2026-01]

H10P 14/2913

. . . .

{being Group IIB-VIA materials} [2026-01]

H10P 14/2914

. . . . .

{Oxides} [2026-01]

H10P 14/2915

. . . . .

{Sulfides} [2026-01]

H10P 14/2916

. . . . .

{Selenides} [2026-01]

H10P 14/2917

. . . . .

{Tellurides} [2026-01]

H10P 14/2918

. . . .

{being semiconductor metal oxides (Group IIB-VIA materials H10P 14/2913)} [2026-01]

H10P 14/2919

. . . .

{being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds} [2026-01]

H10P 14/2921

. . . .

{being crystalline insulating materials} [2026-01]

H10P 14/2922

. . . .

{being non-crystalline insulating materials, e.g. glass or polymers} [2026-01]

H10P 14/2923

. . . .

{being conductive materials, e.g. metallic silicides} [2026-01]

H10P 14/2924

. . .

{Structures} [2026-01]

WARNING

Groups H10P 14/2924 and H10P 14/2925 are incomplete pending reclassification of documents from group H10P 14/29.
Groups H10P 14/29, H10P 14/2924 and H10P 14/2925 should be considered in order to perform a complete search.

H10P 14/2925

. . . .

{Surface structures} [2026-01]

H10P 14/2926

. . .

{Crystal orientations} [2026-01]

WARNING

Group H10P 14/2926 is incomplete pending reclassification of documents from group H10P 14/29.
Groups H10P 14/29 and H10P 14/2926 should be considered in order to perform a complete search.

H10P 14/32

. .

{characterised by intermediate layers between substrates and deposited layers} [2026-01]

H10P 14/3202

. . .

{Materials thereof} [2026-01]

H10P 14/3204

. . . .

{being Group IVA semiconducting materials} [2026-01]

H10P 14/3206

. . . . .

{Carbon, e.g. diamond-like carbon} [2026-01]

H10P 14/3208

. . . . .

{Silicon carbide} [2026-01]

H10P 14/3211

. . . . .

{Silicon, silicon germanium or germanium} [2026-01]

H10P 14/3212

. . . . .

{including tin} [2026-01]

H10P 14/3214

. . . .

{being Group IIIA-VA semiconductors} [2026-01]

H10P 14/3216

. . . . .

{Nitrides} [2026-01]

H10P 14/3218

. . . . .

{Phosphides} [2026-01]

H10P 14/3221

. . . . .

{Arsenides} [2026-01]

H10P 14/3222

. . . . .

{Antimonides} [2026-01]

H10P 14/3224

. . . .

{being Group IIB-VIA semiconductors} [2026-01]

H10P 14/3226

. . . . .

{Oxides} [2026-01]

H10P 14/3228

. . . . .

{Sulfides} [2026-01]

H10P 14/3231

. . . . .

{Selenides} [2026-01]

H10P 14/3232

. . . . .

{Tellurides} [2026-01]

H10P 14/3234

. . . .

{being oxide semiconducting materials (Group IIB-VIA semiconductors H10P 14/3224)} [2026-01]

H10P 14/3236

. . . .

{being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds} [2026-01]

H10P 14/3238

. . . .

{being insulating materials} [2026-01]

H10P 14/3241

. . . .

{being conductive materials} [2026-01]

H10P 14/3242

. . .

{Structure} [2026-01]

H10P 14/3244

. . . .

{Layer structure} [2026-01]

H10P 14/3246

. . . . .

{Monolayers} [2026-01]

H10P 14/3248

. . . . .

{consisting of two layers} [2026-01]

H10P 14/3251

. . . . .

{consisting of three or more layers} [2026-01]

H10P 14/3252

. . . . . .

{Alternating layers, e.g. superlattice} [2026-01]

H10P 14/3254

. . . . .

{Graded layers} [2026-01]

H10P 14/3256

. . . .

{Microstructure} [2026-01]

H10P 14/3258

. . .

{Crystal orientation} [2026-01]

H10P 14/34

. .

{Deposited materials, e.g. layers} [2026-01]

H10P 14/3402

. . .

{characterised by the chemical composition} [2026-01]

H10P 14/3404

. . . .

{being Group IVA materials} [2026-01]

H10P 14/3406

. . . . .

{Carbon, e.g. diamond-like carbon} [2026-01]

H10P 14/3408

. . . . .

{Silicon carbide} [2026-01]

H10P 14/3411

. . . . .

{Silicon, silicon germanium or germanium} [2026-01]

H10P 14/3412

. . . . .

{including tin} [2026-01]

H10P 14/3414

. . . .

{being group IIIA-VIA materials} [2026-01]

H10P 14/3416

. . . . .

{Nitrides} [2026-01]

H10P 14/3418

. . . . .

{Phosphides} [2026-01]

H10P 14/3421

. . . . .

{Arsenides} [2026-01]

H10P 14/3422

. . . . .

{Antimonides} [2026-01]

H10P 14/3424

. . . .

{being Group IIB-VIA materials} [2026-01]

H10P 14/3426

. . . . .

{Oxides} [2026-01]

H10P 14/3428

. . . . .

{Sulfides} [2026-01]

H10P 14/3431

. . . . .

{Selenides} [2026-01]

H10P 14/3432

. . . . .

{Tellurides} [2026-01]

H10P 14/3434

. . . .

{being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P 14/3424)} [2026-01]

H10P 14/3436

. . . .

{being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds} [2026-01]

H10P 14/3438

. . .

{Doping during depositing} [2026-01]

H10P 14/3441

. . . .

{Conductivity type} [2026-01]

H10P 14/3442

. . . . .

{N-type} [2026-01]

H10P 14/3444

. . . . .

{P-type} [2026-01]

H10P 14/3446

. . . . .

{Transition metal elements; Rare earth elements} [2026-01]

H10P 14/3448

. . . .

{Delta-doping} [2026-01]

H10P 14/3451

. . .

{Structure} [2026-01]

H10P 14/3452

. . . .

{Microstructure} [2026-01]

H10P 14/3454

. . . . .

{Amorphous} [2026-01]

H10P 14/3456

. . . . .

{Polycrystalline} [2026-01]

H10P 14/3458

. . . . .

{Monocrystalline} [2026-01]

H10P 14/3461

. . . . .

{Nanoparticles} [2026-01]

H10P 14/3462

. . . . .

{Nanowires} [2026-01]

H10P 14/3464

. . . . .

{Nanotubes} [2026-01]

H10P 14/3466

. . .

{Crystal orientation} [2026-01]

H10P 14/36

. .

{characterised by treatments done before the formation of the materials} [2026-01]

H10P 14/3602

. . .

{In-situ cleaning} [2026-01]

H10P 14/38

. .

{characterised by treatments done after the formation of the materials} [2026-01]

H10P 14/3802

. . .

{Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth} [2026-01]

H10P 14/3804

. . . .

{using crystallisation-inhibiting elements} [2026-01]

H10P 14/3806

. . . .

{using crystallisation-enhancing elements} [2026-01]

H10P 14/3808

. . . .

{using laser beams} [2026-01]

H10P 14/381

. . . . .

{Beam shaping, e.g. using a mask} [2026-01]

H10P 14/3812

. . . . . .

{Shape of mask} [2026-01]

H10P 14/3814

. . . . .

{Continuous wave laser beam} [2026-01]

H10P 14/3816

. . . . .

{Pulsed laser beam} [2026-01]

H10P 14/3818

. . . .

{using particle beams} [2026-01]

H10P 14/382

. . . .

{Scanning of a beam} [2026-01]

H10P 14/3822

. . .

{Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing} [2026-01]

H10P 14/3824

. . .

{Intermixing, interdiffusion or disordering of III-V heterostructures, e.g. IILD} [2026-01]

H10P 14/40

of conductive or resistive materials [2026-01]

H10P 14/412

. .

{Deposition of metallic or metal-silicide materials} [2026-01]

H10P 14/414

. . .

{of metal-silicide materials} [2026-01]

H10P 14/416

. .

{of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers} [2026-01]

H10P 14/418

. .

{the conductive layers comprising transition metals} [2026-01]

H10P 14/42

. .

using a gas or vapour [2026-01]

WARNING

Group H10P 14/42 is impacted by reclassification into group H10P 14/43.
Groups H10P 14/42 and H10P 14/43 should be considered in order to perform a complete search.

H10P 14/43

. . .

Chemical deposition, e.g. chemical vapour deposition [CVD] [2026-01]

WARNING

Group H10P 14/43 is incomplete pending reclassification of documents from group H10P 14/42.
Groups H10P 14/42 and H10P 14/43 should be considered in order to perform a complete search.

H10P 14/432

. . . .

{using selective deposition} [2026-01]

H10P 14/44

. . .

Physical vapour deposition [PVD] [2026-01]

WARNING

Group H10P 14/44 is impacted by reclassification into group H10P 14/45.
Groups H10P 14/44 and H10P 14/45 should be considered in order to perform a complete search.

H10P 14/45

. . . .

Sputtering [2026-01]

WARNING

Group H10P 14/45 is incomplete pending reclassification of documents from group H10P 14/44.
Groups H10P 14/44 and H10P 14/45 should be considered in order to perform a complete search.

H10P 14/46

. .

using a liquid [2026-01]

WARNING

Group H10P 14/46 is incomplete pending reclassification of documents from group H10P 14/47. Group H10P 14/46 is also impacted by reclassification into group H10P 14/48.
Groups H10P 14/47, H10P 14/46 and H10P 14/48 should be considered in order to perform a complete search.

H10P 14/47

. . .

Electrolytic deposition, i.e. electroplating; Electroless plating [2026-01]

WARNING

Group H10P 14/47 is impacted by reclassification into groups H10P 14/46, H10P 14/48, H10D 64/011, H10D 64/012 and H10D 64/013.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 14/48

. . . .

{Electroless plating} [2026-01]

WARNING

Group H10P 14/48 is incomplete pending reclassification of documents from groups H10P 14/46 and H10P 14/47.
Groups H10P 14/46, H10P 14/47 and H10P 14/48 should be considered in order to perform a complete search.

H10P 14/60

of insulating materials [2026-01]

WARNING

Group H10P 14/60 is impacted by reclassification into groups H10P 95/70 and H10P 95/80.
Groups H10P 14/60, H10P 95/70 and H10P 95/80 should be considered in order to perform a complete search.

H10P 14/61

. .

using masks [2026-01]

H10P 14/63

. .

{characterised by the formation processes} [2026-01]

H10P 14/6302

. . .

{Non-deposition formation processes} [2026-01]

H10P 14/6304

. . . .

{Formation by oxidation, e.g. oxidation of the substrate} [2026-01]

H10P 14/6306

. . . . .

{of the semiconductor materials} [2026-01]

H10P 14/6308

. . . . . .

{of Group IV semiconductors} [2026-01]

WARNING

Group H10P 14/6308 is impacted by reclassification into groups H10P 14/6309, H10P 14/6318, H10P 14/6319, H10P 14/6322 and H10P 14/6324.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 14/6309

. . . . . . .

{of silicon in uncombined form, i.e. pure silicon} [2026-01]

WARNING

Group H10P 14/6309 is incomplete pending reclassification of documents from group H10P 14/6308.
Groups H10P 14/6308 and H10P 14/6309 should be considered in order to perform a complete search.

H10P 14/6312

. . . . . .

{of Group III-V semiconductors} [2026-01]

H10P 14/6314

. . . . .

{of a metallic layer} [2026-01]

H10P 14/6316

. . . .

{Formation by nitridation, e.g. nitridation of the substrate} [2026-01]

WARNING

Group H10P 14/6316 is impacted by reclassification into groups H10P 14/6318, H10P 14/6319, H10P 14/6322 and H10P 14/6324.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 14/6318

. . . .

{Formation by simultaneous oxidation and nitridation} [2026-01]

WARNING

Group H10P 14/6318 is incomplete pending reclassification of documents from groups H10P 14/6308 and H10P 14/6316.
Groups H10P 14/6308, H10P 14/6316 and H10P 14/6318 should be considered in order to perform a complete search.

H10P 14/6319

. . . .

{Formation by plasma treatments, e.g. plasma oxidation of the substrate} [2026-01]

WARNING

Group H10P 14/6319 is incomplete pending reclassification of documents from groups H10P 14/6308 and H10P 14/6316.
Groups H10P 14/6308, H10P 14/6316 and H10P 14/6319 should be considered in order to perform a complete search.

H10P 14/6322

. . . .

{Formation by thermal treatments (formation by plasma treatment H10P 14/6319)} [2026-01]

WARNING

Group H10P 14/6322 is incomplete pending reclassification of documents from groups H10P 14/6308 and H10P 14/6316.
Groups H10P 14/6308, H10P 14/6316 and H10P 14/6322 should be considered in order to perform a complete search.

H10P 14/6324

. . . .

{Formation by anodic treatments, e.g. anodic oxidation} [2026-01]

WARNING

Group H10P 14/6324 is incomplete pending reclassification of documents from groups H10P 14/6308 and H10P 14/6316.
Groups H10P 14/6308, H10P 14/6316 and H10P 14/6324 should be considered in order to perform a complete search.

H10P 14/6326

. . .

{Deposition processes} [2026-01]

H10P 14/6328

. . . .

{Deposition from the gas or vapour phase} [2026-01]

H10P 14/6329

. . . . .

{using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition} [2026-01]

H10P 14/6332

. . . . .

{using thermal evaporation (formation of epitaxial layers by a deposition process H10P 14/6349)} [2026-01]

H10P 14/6334

. . . . .

{using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P 14/6329)} [2026-01]

H10P 14/6336

. . . . . .

{in the presence of a plasma [PECVD]} [2026-01]

H10P 14/6338

. . . . . .

{the reactions being activated by other means than plasma or thermal, e.g. photo-CVD} [2026-01]

H10P 14/6339

. . . . . .

{deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD} [2026-01]

H10P 14/6342

. . . .

{Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating} [2026-01]

H10P 14/6344

. . . . .

{using Langmuir-Blodgett techniques} [2026-01]

H10P 14/6346

. . . . .

{using printing, e.g. ink-jet printing} [2026-01]

H10P 14/6348

. . . . .

{Liquid ALD} [2026-01]

H10P 14/6349

. . . .

{Deposition of epitaxial materials} [2026-01]

H10P 14/65

. .

{characterised by treatments performed before or after the formation of the materials} [2026-01]

H10P 14/6502

. . .

{of treatments performed before formation of the materials} [2026-01]

H10P 14/6504

. . . .

{In-situ cleaning} [2026-01]

H10P 14/6506

. . . .

{Formation of intermediate materials} [2026-01]

H10P 14/6508

. . . .

{by exposure to a liquid} [2026-01]

H10P 14/6509

. . . .

{by exposure to electromagnetic radiation, e.g. UV light} [2026-01]

H10P 14/6512

. . . .

{by exposure to a gas or vapour} [2026-01]

H10P 14/6514

. . . . .

{by exposure to a plasma} [2026-01]

H10P 14/6516

. . .

{of treatments performed after formation of the materials} [2026-01]

H10P 14/6518

. . . .

{by introduction of substances into an already-existing insulating layer} [2026-01]

H10P 14/6519

. . . . .

{the substance being oxygen} [2026-01]

H10P 14/6522

. . . . . .

{introduced into a nitride material, e.g. changing SiN to SiON} [2026-01]

H10P 14/6524

. . . . .

{the substance being nitrogen} [2026-01]

H10P 14/6526

. . . . . .

{introduced into an oxide material, e.g. changing SiO to SiON} [2026-01]

H10P 14/6528

. . . .

{In-situ cleaning after layer formation, e.g. removing process residues} [2026-01]

H10P 14/6529

. . . .

{by exposure to a gas or vapour} [2026-01]

H10P 14/6532

. . . . .

{by exposure to a plasma} [2026-01]

H10P 14/6534

. . . .

{by exposure to a liquid} [2026-01]

H10P 14/6536

. . . .

{by exposure to radiation, e.g. visible light} [2026-01]

H10P 14/6538

. . . . .

{by exposure to UV light} [2026-01]

H10P 14/6539

. . . . .

{by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions} [2026-01]

H10P 14/6542

. . . . .

{by using coherent radiation, e.g. using a laser} [2026-01]

H10P 14/6544

. . . .

{to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer} [2026-01]

H10P 14/6546

. . . .

{to change the surface groups of the insulating materials} [2026-01]

H10P 14/6548

. . . .

{by forming intermediate materials, e.g. capping layers or diffusion barriers} [2026-01]

H10P 14/66

. .

{characterised by the type of materials} [2026-01]

H10P 14/662

. . .

{Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P 14/6508, H10P 14/6548)} [2026-01]

H10P 14/665

. . .

{Porous materials} [2026-01]

H10P 14/668

. . .

{the materials being characterised by the deposition precursor materials} [2026-01]

H10P 14/6681

. . . .

{the precursor containing a compound comprising Si} [2026-01]

H10P 14/6682

. . . . .

{the compound being a silane, e.g. disilane, methylsilane or chlorosilane} [2026-01]

H10P 14/6684

. . . . .

{the compound comprising silicon and oxygen} [2026-01]

H10P 14/6686

. . . . . .

{the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane} [2026-01]

H10P 14/6687

. . . . .

{the compound comprising silicon and nitrogen} [2026-01]

H10P 14/6689

. . . . . .

{the compound being a silazane} [2026-01]

H10P 14/68

. .

Organic materials, e.g. photoresists [2026-01]

WARNING

Group H10P 14/68 is impacted by reclassification into group H10P 14/69.
Groups H10P 14/68 and H10P 14/69 should be considered in order to perform a complete search.

H10P 14/683

. . .

{carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC} [2026-01]

WARNING

Group H10P 14/683 is impacted by reclassification into group H10P 14/69.
Groups H10P 14/683 and H10P 14/69 should be considered in order to perform a complete search.

H10P 14/687

. . . .

{the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene} [2026-01]

WARNING

Group H10P 14/687 is impacted by reclassification into group H10P 14/69.
Groups H10P 14/687 and H10P 14/69 should be considered in order to perform a complete search.

H10P 14/69

. .

Inorganic materials [2026-01]

WARNING

Group H10P 14/69 is incomplete pending reclassification of documents from groups H10P 14/68, H10P 14/683 and H10P 14/687. Group H10P 14/69 is also impacted by reclassification into group H10P 14/694.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 14/6902

. . .

{composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon} [2026-01]

H10P 14/6903

. . .

{containing silicon} [2026-01]

WARNING

Group H10P 14/6903 is impacted by reclassification into groups H10P 14/6921 and H10P 14/6943.
Groups H10P 14/6903, H10P 14/6921 and H10P 14/6943 should be considered in order to perform a complete search.

H10P 14/6905

. . . .

{being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H} [2026-01]

H10P 14/6906

. . .

{containing at least one metal element and not containing oxygen, e.g. metal carbides or metal carbonitrides (metal nitrides H10P 14/6947)} [2026-01]

WARNING

Group H10P 14/6906 is incomplete pending reclassification of documents from group H10P 14/6938.
Groups H10P 14/6938 and H10P 14/6906 should be considered in order to perform a complete search.

H10P 14/6907

. . . .

{characterised by the metal} [2026-01]

WARNING

Group H10P 14/6907 is incomplete pending reclassification of documents from group H10P 14/6939.
Groups H10P 14/6939 and H10P 14/6907 should be considered in order to perform a complete search.

H10P 14/6908

. . . . .

{the material containing aluminium} [2026-01]

WARNING

Group H10P 14/6908 is incomplete pending reclassification of documents from group H10P 14/69391.
Groups H10P 14/69391 and H10P 14/6908 should be considered in order to perform a complete search.

H10P 14/6909

. . . . .

{the material containing hafnium} [2026-01]

WARNING

Group H10P 14/6909 is incomplete pending reclassification of documents from group H10P 14/69392.
Groups H10P 14/69392 and H10P 14/6909 should be considered in order to perform a complete search.

H10P 14/691

. . . . .

{the material containing tantalum} [2026-01]

WARNING

Group H10P 14/691 is incomplete pending reclassification of documents from group H10P 14/69393.
Groups H10P 14/69393 and H10P 14/691 should be considered in order to perform a complete search.

H10P 14/6911

. . . . .

{the material containing titanium} [2026-01]

WARNING

Group H10P 14/6911 is incomplete pending reclassification of documents from group H10P 14/69394.
Groups H10P 14/69394 and H10P 14/6911 should be considered in order to perform a complete search.

H10P 14/6912

. . . . .

{the material containing zirconium} [2026-01]

WARNING

Group H10P 14/6912 is incomplete pending reclassification of documents from group H10P 14/69395.
Groups H10P 14/69395 and H10P 14/6912 should be considered in order to perform a complete search.

H10P 14/6913

. . . . .

{the material containing at least one rare earth metal element} [2026-01]

WARNING

Group H10P 14/6913 is incomplete pending reclassification of documents from group H10P 14/69396.
Groups H10P 14/69396 and H10P 14/6913 should be considered in order to perform a complete search.

H10P 14/6914

. . . . .

{the material containing two or more metal elements} [2026-01]

WARNING

Group H10P 14/6914 is incomplete pending reclassification of documents from group H10P 14/69397.
Groups H10P 14/69397 and H10P 14/6914 should be considered in order to perform a complete search.

H10P 14/692

. . .

composed of oxides, glassy oxides or oxide-based glasses [2026-01]

H10P 14/6921

. . . .

{containing silicon} [2026-01]

WARNING

Group H10P 14/6921 is incomplete pending reclassification of documents from group H10P 14/6903.
Groups H10P 14/6903 and H10P 14/6921 should be considered in order to perform a complete search.

H10P 14/69215

. . . . .

{the material being a silicon oxide, e.g. SiO₂} [2026-01]

H10P 14/6922

. . . . .

{the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC} [2026-01]

H10P 14/6923

. . . . . .

{the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG} [2026-01]

H10P 14/6924

. . . . . .

{the material being halogen doped silicon oxides, e.g. FSG} [2026-01]

H10P 14/6925

. . . . . .

{the material comprising hydrogen silsesquioxane, e.g. HSQ} [2026-01]

H10P 14/6926

. . . . . .

{the material comprising alkyl silsesquioxane, e.g. MSQ} [2026-01]

H10P 14/6927

. . . . . .

{the material being a silicon oxynitride, e.g. SiON or SiON:H} [2026-01]

H10P 14/6928

. . . . .

{the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides} [2026-01]

H10P 14/6929

. . . . . .

{the material containing aluminium, e.g. AlSiOx} [2026-01]

H10P 14/693

. . . . . .

{the material containing hafnium, e.g. HfSiOx or HfSiON} [2026-01]

H10P 14/6931

. . . . . .

{the material containing tantalum, e.g. TaSiOx} [2026-01]

H10P 14/6932

. . . . . .

{the material containing titanium, e.g. TiSiOx} [2026-01]

H10P 14/6933

. . . . . .

{the material containing at least one rare earth element, e.g. silicate of scandium or silicate of yttrium} [2026-01]

H10P 14/6934

. . . . . .

{the material containing zirconium, e.g. ZrSiOx} [2026-01]

H10P 14/6936

. . . . . .

{the material containing two or more metal elements} [2026-01]

H10P 14/6938

. . . .

{the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides} [2026-01]

WARNING

Group H10P 14/6938 is impacted by reclassification into groups H10P 14/6906 and H10P 14/6947.
Groups H10P 14/6938, H10P 14/6906 and H10P 14/6947 should be considered in order to perform a complete search.

H10P 14/6939

. . . . .

{characterised by the metal} [2026-01]

WARNING

Group H10P 14/6939 is impacted by reclassification into groups H10P 14/6907 and H10P 14/69471.
Groups H10P 14/6939, H10P 14/6907 and H10P 14/69471 should be considered in order to perform a complete search.

H10P 14/69391

. . . . . .

{the material containing aluminium, e.g. Al₂O₃} [2026-01]

WARNING

Group H10P 14/69391 is impacted by reclassification into groups H10P 14/6908 and H10P 14/69472.
Groups H10P 14/69391, H10P 14/6908 and H10P 14/69472 should be considered in order to perform a complete search.

H10P 14/69392

. . . . . .

{the material containing hafnium, e.g. HfO₂} [2026-01]

WARNING

Group H10P 14/69392 is impacted by reclassification into groups H10P 14/6909 and H10P 14/69473.
Groups H10P 14/69392, H10P 14/6909 and H10P 14/69473 should be considered in order to perform a complete search.

H10P 14/69393

. . . . . .

{the material containing tantalum, e.g. Ta₂O₅} [2026-01]

WARNING

Group H10P 14/69393 is impacted by reclassification into groups H10P 14/691 and H10P 14/69474.
Groups H10P 14/69393, H10P 14/691 and H10P 14/69474 should be considered in order to perform a complete search.

H10P 14/69394

. . . . . .

{the material containing titanium, e.g. TiO₂} [2026-01]

WARNING

Group H10P 14/69394 is impacted by reclassification into groups H10P 14/6911 and H10P 14/69475.
Groups H10P 14/69394, H10P 14/6911 and H10P 14/69475 should be considered in order to perform a complete search.

H10P 14/69395

. . . . . .

{the material containing zirconium, e.g. ZrO₂} [2026-01]

WARNING

Group H10P 14/69395 is impacted by reclassification into groups H10P 14/6912 and H10P 14/69476.
Groups H10P 14/69395, H10P 14/6912 and H10P 14/69476 should be considered in order to perform a complete search.

H10P 14/69396

. . . . . .

{the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium} [2026-01]

WARNING

Group H10P 14/69396 is impacted by reclassification into groups H10P 14/6913 and H10P 14/69477.
Groups H10P 14/69396, H10P 14/6913 and H10P 14/69477 should be considered in order to perform a complete search.

H10P 14/69397

. . . . . .

{the material containing two or more metal elements} [2026-01]

WARNING

Group H10P 14/69397 is impacted by reclassification into groups H10P 14/6914 and H10P 14/69478.
Groups H10P 14/69397, H10P 14/6914 and H10P 14/69478 should be considered in order to perform a complete search.

H10P 14/69398

. . . . .

{the material having a perovskite structure, e.g. BaTiO₃} [2026-01]

H10P 14/694

. . .

composed of nitrides [2026-01]

WARNING

Group H10P 14/694 is incomplete pending reclassification of documents from group H10P 14/69.
Groups H10P 14/69 and H10P 14/694 should be considered in order to perform a complete search.

H10P 14/6943

. . . .

{containing silicon (silicon oxynitrides H10P 14/6927)} [2026-01]

WARNING

Group H10P 14/6943 is incomplete pending reclassification of documents from group H10P 14/6903.
Groups H10P 14/6903 and H10P 14/6943 should be considered in order to perform a complete search.

H10P 14/69433

. . . . .

{the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz} [2026-01]

H10P 14/6947

. . . .

{the material containing at least one metal element and not containing oxygen, e.g. metal nitrides} [2026-01]

WARNING

Group H10P 14/6947 is incomplete pending reclassification of documents from group H10P 14/6938.
Groups H10P 14/6938 and H10P 14/6947 should be considered in order to perform a complete search.

H10P 14/69471

. . . . .

{characterised by the metal} [2026-01]

WARNING

Group H10P 14/69471 is incomplete pending reclassification of documents from group H10P 14/6939.
Groups H10P 14/6939 and H10P 14/69471 should be considered in order to perform a complete search.

H10P 14/69472

. . . . . .

{the material containing aluminium} [2026-01]

WARNING

Group H10P 14/69472 is incomplete pending reclassification of documents from group H10P 14/69391.
Groups H10P 14/69391 and H10P 14/69472 should be considered in order to perform a complete search.

H10P 14/69473

. . . . . .

{the material containing hafnium} [2026-01]

WARNING

Group H10P 14/69473 is incomplete pending reclassification of documents from group H10P 14/69392.
Groups H10P 14/69392 and H10P 14/69473 should be considered in order to perform a complete search.

H10P 14/69474

. . . . . .

{the material containing tantalum} [2026-01]

WARNING

Group H10P 14/69474 is incomplete pending reclassification of documents from group H10P 14/69393.
Groups H10P 14/69393 and H10P 14/69474 should be considered in order to perform a complete search.

H10P 14/69475

. . . . . .

{the material containing titanium} [2026-01]

WARNING

Group H10P 14/69475 is incomplete pending reclassification of documents from group H10P 14/69394.
Groups H10P 14/69394 and H10P 14/69475 should be considered in order to perform a complete search.

H10P 14/69476

. . . . . .

{the material containing zirconium} [2026-01]

WARNING

Group H10P 14/69476 is incomplete pending reclassification of documents from group H10P 14/69395.
Groups H10P 14/69395 and H10P 14/69476 should be considered in order to perform a complete search.

H10P 14/69477

. . . . . .

{the material containing at least one rare earth metal element} [2026-01]

WARNING

Group H10P 14/69477 is incomplete pending reclassification of documents from group H10P 14/69396.
Groups H10P 14/69396 and H10P 14/69477 should be considered in order to perform a complete search.

H10P 14/69478

. . . . . .

{the material containing two or more metal elements} [2026-01]

WARNING

Group H10P 14/69478 is incomplete pending reclassification of documents from group H10P 14/69397.
Groups H10P 14/69397 and H10P 14/69478 should be considered in order to perform a complete search.

Modification of layers, structures or materials [2026-01]

H10P 30/00

Ion implantation into wafers, substrates or parts of devices [2026-01]

WARNING

Group H10P 30/00 is incomplete pending reclassification of documents from group H10P 30/20.
Groups H10P 30/20 and H10P 30/00 should be considered in order to perform a complete search.

H10P 30/20

into semiconductor materials, e.g. for doping [2026-01]

NOTE

{When classifying in this group, the classification both in process and material subgroups is mandatory}

WARNING

Group H10P 30/20 is impacted by reclassification into group H10P 30/00.
Groups H10P 30/20 and H10P 30/00 should be considered in order to perform a complete search.

H10P 30/202

. .

{characterised by the semiconductor materials} [2026-01]

WARNING

Group H10P 30/202 is impacted by reclassification into groups H10P 30/208, H10P 30/21 - H10P 30/212, H10P 30/22 - H10P 30/221, H10P 30/222 and H10P 30/28.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 30/204

. . .

{into Group IV semiconductors} [2026-01]

H10P 30/2042

. . . .

{into crystalline silicon carbide} [2026-01]

WARNING

Group H10P 30/2042 is impacted by reclassification into groups H10P 30/21, H10P 30/218 and H10P 30/28.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 30/2044

. . . .

{into semiconducting carbon, e.g. diamond or semiconducting diamond-like carbon} [2026-01]

WARNING

Group H10P 30/2044 is impacted by reclassification into groups H10P 30/208, H10P 30/21 - H10P 30/212, H10P 30/22 - H10P 30/221, H10P 30/222 and H10P 30/28.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 30/206

. . .

{into Group III-V semiconductors} [2026-01]

H10P 30/208

. .

{of electrically inactive species} [2026-01]

WARNING

Group H10P 30/208 is incomplete pending reclassification of documents from groups H10P 30/202 and H10P 30/2044.
Groups H10P 30/202, H10P 30/2044 and H10P 30/208 should be considered in order to perform a complete search.

H10P 30/209

. . .

{in silicon to make buried insulating layers} [2026-01]

H10P 30/21

. .

{of electrically active species} [2026-01]

WARNING

Group H10P 30/21 is incomplete pending reclassification of documents from groups H10P 30/202, H10P 30/2042 and H10P 30/2044. Group H10P 30/21 is also impacted by reclassification into groups H10P 30/214 and H10P 30/28.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 30/212

. . .

{Through-implantation} [2026-01]

WARNING

Group H10P 30/212 is incomplete pending reclassification of documents from groups H10P 30/202 and H10P 30/2044. Group H10P 30/212 is also impacted by reclassification into groups H10P 30/214 and H10P 30/28.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 30/214

. .

{Recoil-implantation} [2026-01]

WARNING

Group H10P 30/214 is incomplete pending reclassification of documents from groups H10P 30/21 and H10P 30/212.
Groups H10P 30/21, H10P 30/212 and H10P 30/214 should be considered in order to perform a complete search.

H10P 30/218

. .

{characterised by the implantation in a compound semiconductor of both electrically active and inactive species in the same semiconductor region to be doped n-type or p-type} [2026-01]

WARNING

Group H10P 30/218 is incomplete pending reclassification of documents from group H10P 30/2042.
Groups H10P 30/2042 and H10P 30/218 should be considered in order to perform a complete search.

H10P 30/22

. .

using masks [2026-01]

WARNING

Group H10P 30/22 is incomplete pending reclassification of documents from groups H10P 30/202 and H10P 30/2044.
Groups H10P 30/202, H10P 30/2044 and H10P 30/22 should be considered in order to perform a complete search.

H10P 30/221

. . .

{characterised by the angle between the ion beam and the mask} [2026-01]

WARNING

Group H10P 30/221 is incomplete pending reclassification of documents from groups H10P 30/202, H10P 30/2044 and H10P 30/222.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 30/222

. .

{characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P 30/221)} [2026-01]

WARNING

Group H10P 30/222 is incomplete pending reclassification of documents from groups H10P 30/202 and H10P 30/2044. Group H10P 30/222 is also impacted by reclassification into group H10P 30/221.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 30/224

. .

{of a cluster, e.g. using a gas cluster ion beam} [2026-01]

H10P 30/225

. .

{of a molecular ion, e.g. decaborane} [2026-01]

H10P 30/226

. .

{at a temperature lower than room temperature} [2026-01]

H10P 30/28

. .

characterised by an annealing step, e.g. for activation of dopants [2026-01]

WARNING

Group H10P 30/28 is incomplete pending reclassification of documents from groups H10P 30/202, H10P 30/2042, H10P 30/2044, H10P 30/21, H10P 30/212, H10P 95/90 and H10P 95/904.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 30/40

into insulating materials [2026-01]

WARNING

Group H10P 30/40 is impacted by reclassification into group H10P 32/20.
Groups H10P 30/40 and H10P 32/20 should be considered in order to perform a complete search.

H10P 32/00

Diffusion of dopants within, into or out of wafers, substrates or parts of devices (during formation of materials H10P 14/00) [2026-01]

WARNING

Group H10P 32/00 is impacted by reclassification into group H10P 32/10.
Groups H10P 32/00 and H10P 32/10 should be considered in order to perform a complete search.

H10P 32/10

Diffusion of dopants within, into or out of semiconductor bodies or layers [2026-01]

WARNING

Group H10P 32/10 is incomplete pending reclassification of documents from group H10P 32/00.
Groups H10P 32/00 and H10P 32/10 should be considered in order to perform a complete search.

H10P 32/12

. .

between a solid phase and a gaseous phase [2026-01]

H10P 32/1204

. . .

{from a plasma phase} [2026-01]

H10P 32/14

. .

within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase [2026-01]

H10P 32/1404

. . .

{using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase} [2026-01]

H10P 32/1406

. . . .

{by ion implantation} [2026-01]

H10P 32/1408

. . .

{from or through or into an external applied layer, e.g. photoresist or nitride layers} [2026-01]

NOTE

{In the range H10P 32/1408 - 32/1414 the main compositional part of the applied layer just before the diffusion step has to be considered for classification}

H10P 32/141

. . . .

{the applied layer comprising oxides only} [2026-01]

H10P 32/1412

. . . . .

{through the applied layer} [2026-01]

H10P 32/1414

. . . .

{the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon} [2026-01]

H10P 32/15

. .

{from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping} [2026-01]

H10P 32/16

. .

between a solid phase and a liquid phase [2026-01]

H10P 32/17

. .

{characterised by the semiconductor material} [2026-01]

H10P 32/171

. . .

{being group IV material} [2026-01]

H10P 32/172

. . . .

{being crystalline silicon carbide} [2026-01]

H10P 32/173

. . . .

{being semiconducting carbon, e.g. diamond or semiconducting diamond-like carbon} [2026-01]

WARNING

Group H10P 32/173 is incomplete pending reclassification of documents from group H10P 95/92.
Groups H10P 95/92 and H10P 32/173 should be considered in order to perform a complete search.

H10P 32/174

. . .

{being Group III-V material} [2026-01]

H10P 32/18

. .

{Diffusion lifetime killers} [2026-01]

H10P 32/185

. .

{Lithium-drift diffusion} [2026-01]

H10P 32/19

. .

{Diffusion sources} [2026-01]

H10P 32/20

Diffusion for doping of insulating layers [2026-01]

WARNING

Group H10P 32/20 is incomplete pending reclassification of documents from group H10P 30/40.
Groups H10P 30/40 and H10P 32/20 should be considered in order to perform a complete search.

H10P 32/30

Diffusion for doping of conductive or resistive layers [2026-01]

H10P 32/302

. .

{Doping polycrystalline silicon or amorphous silicon layers} [2026-01]

H10P 34/00

Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices [2026-01]

WARNING

Group H10P 34/00 is impacted by reclassification into groups H10P 34/10, H10P 34/20 and H10P 34/40.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 34/10

{with corpuscular radiation} [2026-01]

WARNING

Group H10P 34/10 is incomplete pending reclassification of documents from group H10P 34/00.
Groups H10P 34/00 and H10P 34/10 should be considered in order to perform a complete search.

H10P 34/20

for inducing a nuclear reaction transmuting chemical elements [2026-01]

WARNING

Group H10P 34/20 is incomplete pending reclassification of documents from group H10P 34/00.
Groups H10P 34/00 and H10P 34/20 should be considered in order to perform a complete search.

H10P 34/40

with high-energy radiation [2026-01]

WARNING

Group H10P 34/40 is incomplete pending reclassification of documents from group H10P 34/00.
Groups H10P 34/00 and H10P 34/40 should be considered in order to perform a complete search.

H10P 34/42

. .

with electromagnetic radiation, e.g. laser annealing (laser cutting H10P 54/20) [2026-01]

H10P 34/422

. . .

{using incoherent radiation} [2026-01]

H10P 36/00

Gettering within semiconductor bodies [2026-01]

WARNING

Group H10P 36/00 is impacted by reclassification into groups H10P 36/20 and H10P 95/40.
Groups H10P 36/00, H10P 36/20 and H10P 95/40 should be considered in order to perform a complete search.

H10P 36/03

{within silicon bodies} [2026-01]

WARNING

Group H10P 36/03 is impacted by reclassification into group H10P 95/402.
Groups H10P 36/03 and H10P 95/402 should be considered in order to perform a complete search.

H10P 36/07

. .

{of silicon-on-insulator structures} [2026-01]

H10P 36/20

Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body [2026-01]

WARNING

Group H10P 36/20 is incomplete pending reclassification of documents from group H10P 36/00.
Groups H10P 36/00 and H10P 36/20 should be considered in order to perform a complete search.

Removal of layers, structures or materials [2026-01]

H10P 50/00

Etching of wafers, substrates or parts of devices [2026-01]

WARNING

Group H10P 50/00 is impacted by reclassification into groups H10P 50/20, H10P 50/24, H10P 50/26, H10P 50/60, H10P 50/61, H10P 50/64, H10P 50/66, H10P 52/00, H10P 95/00, H10P 95/02 and H10P 95/70.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 50/20

Dry etching; Plasma etching; Reactive-ion etching [2026-01]

WARNING

Group H10P 50/20 is incomplete pending reclassification of documents from group H10P 50/00. Group H10P 50/20 is also impacted by reclassification into groups H10P 50/24, H10P 50/26, H10P 50/60, H10P 50/61, H10P 50/64 and H10P 50/66.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 50/24

. .

of semiconductor materials [2026-01]

WARNING

Group H10P 50/24 is incomplete pending reclassification of documents from groups H10P 50/00 and H10P 50/20.
Groups H10P 50/00, H10P 50/20 and H10P 50/24 should be considered in order to perform a complete search.

H10P 50/242

. . .

{of Group IV materials} [2026-01]

H10P 50/244

. . . .

{comprising alternated and repeated etching and passivation steps} [2026-01]

H10P 50/246

. . .

{of Group III-V materials} [2026-01]

H10P 50/26

. .

of conductive or resistive materials [2026-01]

WARNING

Group H10P 50/26 is incomplete pending reclassification of documents from groups H10P 50/00 and H10P 50/20.
Groups H10P 50/00, H10P 50/20 and H10P 50/26 should be considered in order to perform a complete search.

H10P 50/262

. . .

{by physical means only} [2026-01]

H10P 50/263

. . . .

{of silicon-containing layers} [2026-01]

H10P 50/264

. . .

{by chemical means} [2026-01]

WARNING

Group H10P 50/264 is impacted by reclassification into group H10P 50/663.
Groups H10P 50/264 and H10P 50/663 should be considered in order to perform a complete search.

H10P 50/266

. . . .

{by vapour etching only} [2026-01]

H10P 50/267

. . . . .

{using plasmas} [2026-01]

H10P 50/268

. . . . . .

{of silicon-containing layers} [2026-01]

H10P 50/269

. . . . .

{pre- or post-treatments, e.g. anti-corrosion processes} [2026-01]

H10P 50/28

. .

of insulating materials [2026-01]

WARNING

Group H10P 50/28 is impacted by reclassification into group H10P 50/68.
Groups H10P 50/28 and H10P 50/68 should be considered in order to perform a complete search.

H10P 50/282

. . .

{of inorganic materials} [2026-01]

WARNING

Group H10P 50/282 is impacted by reclassification into group H10P 50/683.
Groups H10P 50/282 and H10P 50/683 should be considered in order to perform a complete search.

H10P 50/283

. . . .

{by chemical means} [2026-01]

WARNING

Group H10P 50/283 is impacted by reclassification into group H10P 50/683.
Groups H10P 50/283 and H10P 50/683 should be considered in order to perform a complete search.

H10P 50/285

. . . . .

{of materials not containing Si, e.g. PZT or Al₂O₃} [2026-01]

H10P 50/286

. . .

{of organic materials} [2026-01]

WARNING

Group H10P 50/286 is impacted by reclassification into group H10P 50/68.
Groups H10P 50/286 and H10P 50/68 should be considered in order to perform a complete search.

H10P 50/287

. . . .

{by chemical means} [2026-01]

WARNING

Group H10P 50/287 is impacted by reclassification into group H10P 50/68.
Groups H10P 50/287 and H10P 50/68 should be considered in order to perform a complete search.

H10P 50/60

Wet etching [2026-01]

WARNING

Groups H10P 50/60, H10P 50/61, H10P 50/64 and H10P 50/66 are incomplete pending reclassification of documents from groups H10P 50/00 and H10P 50/20.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 50/61

. .

Electrolytic etching [2026-01]

H10P 50/613

. . .

{of Group IV materials} [2026-01]

H10P 50/617

. . .

{of Group III-V materials} [2026-01]

H10P 50/64

. .

of semiconductor materials [2026-01]

H10P 50/642

. . .

{Chemical etching} [2026-01]

H10P 50/644

. . . .

{Anisotropic liquid etching (H10P 50/61 takes precedence)} [2026-01]

H10P 50/646

. . . .

{of Group III-V materials} [2026-01]

H10P 50/648

. . . . .

{Anisotropic liquid etching} [2026-01]

H10P 50/66

. .

of conductive or resistive materials [2026-01]

H10P 50/663

. . .

{by chemical means only} [2026-01]

WARNING

Group H10P 50/663 is incomplete pending reclassification of documents from group H10P 50/264.
Groups H10P 50/264 and H10P 50/663 should be considered in order to perform a complete search.

H10P 50/667

. . . .

{by liquid etching only} [2026-01]

H10P 50/68

. .

of insulating materials [2026-01]

WARNING

Group H10P 50/68 is incomplete pending reclassification of documents from groups H10P 50/28, H10P 50/286 and H10P 50/287.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 50/683

. . .

{of inorganic materials} [2026-01]

WARNING

Group H10P 50/683 is incomplete pending reclassification of documents from groups H10P 50/282 and H10P 50/283.
Groups H10P 50/282, H10P 50/283 and H10P 50/683 should be considered in order to perform a complete search.

H10P 50/69

{using masks for semiconductor materials} [2026-01]

H10P 50/691

. .

{for Group V materials or Group III-V materials} [2026-01]

H10P 50/692

. . .

{characterised by their composition, e.g. multilayer masks or materials} [2026-01]

H10P 50/693

. . .

{characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane} [2026-01]

H10P 50/694

. . . .

{characterised by their behaviour during the process, e.g. soluble masks or redeposited masks} [2026-01]

H10P 50/695

. . . .

{characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask} [2026-01]

H10P 50/696

. . . .

{Process specially adapted to improve the resolution of the mask} [2026-01]

H10P 50/71

{using masks for conductive or resistive materials} [2026-01]

H10P 50/73

{using masks for insulating materials} [2026-01]

H10P 52/00

Grinding, lapping or polishing of wafers, substrates or parts of devices [2026-01]

WARNING

Group H10P 52/00 is incomplete pending reclassification of documents from group H10P 50/00. Group H10P 52/00 is incomplete pending reclassification of documents from group H10P 50/00. Group H10P 52/00 is also impacted by reclassification into groups H10P 52/20, H10P 52/40, H10P 54/00 - H10P 54/94 and H10P 95/60.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 52/20

Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] [2026-01]

WARNING

Group H10P 52/20 is incomplete pending reclassification of documents from group H10P 52/00.
Groups H10P 52/00 and H10P 52/20 should be considered in order to perform a complete search.

H10P 52/202

. .

{of semiconductor materials} [2026-01]

WARNING

Group H10P 52/202 is incomplete pending reclassification of documents from group H10P 52/402.
Groups H10P 52/402 and H10P 52/202 should be considered in order to perform a complete search.

H10P 52/203

. .

{of conductive or resistive materials} [2026-01]

H10P 52/207

. .

{of inorganic insulating materials} [2026-01]

WARNING

Group H10P 52/207 is incomplete pending reclassification of documents from group H10P 95/062.
Groups H10P 95/062 and H10P 52/207 should be considered in order to perform a complete search.

H10P 52/209

. .

{of organic insulating materials} [2026-01]

WARNING

Group H10P 52/209 is incomplete pending reclassification of documents from group H10P 95/08.
Groups H10P 95/08 and H10P 52/209 should be considered in order to perform a complete search.

H10P 52/40

Chemomechanical polishing [CMP] (electrochemical mechanical polishing H10P 52/20) [2026-01]

WARNING

Group H10P 52/40 is incomplete pending reclassification of documents from group H10P 52/00.
Groups H10P 52/00 and H10P 52/40 should be considered in order to perform a complete search.

H10P 52/402

. .

{of semiconductor materials} [2026-01]

WARNING

Group H10P 52/402 is impacted by reclassification into group H10P 52/202.
Groups H10P 52/402 and H10P 52/202 should be considered in order to perform a complete search.

H10P 52/403

. .

{of conductive or resistive materials} [2026-01]

H10P 52/407

. . .

{of inorganic insulating materials} [2026-01]

WARNING

Group H10P 52/407 is incomplete pending reclassification of documents from group H10P 95/062.
Groups H10P 95/062 and H10P 52/407 should be considered in order to perform a complete search.

H10P 52/409

. . .

{of organic insulating materials} [2026-01]

WARNING

Group H10P 52/409 is incomplete pending reclassification of documents from group H10P 95/08.
Groups H10P 95/08 and H10P 52/409 should be considered in order to perform a complete search.

H10P 54/00

Cutting or separating of wafers, substrates or parts of devices [2026-01]

NOTE

This group covers cutting or separating of wafers or substrates having semiconductor or solid-state devices formed, or to be formed, therein or thereon. The cutting may be partial, e.g. for making a groove.

WARNING

Groups H10P 54/00, H10P 54/20, H10P 54/30, H10P 54/40, H10P 54/50, H10P 54/90, H10P 54/922, H10P 54/924 and H10P 54/94 are incomplete pending reclassification of documents from groups H10P 52/00 and H10P 58/00.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 54/20

by laser cutting [2026-01]

H10P 54/30

by forming weakened zones for subsequent cutting or separating, e.g. by laser treatment or by ion implantation [2026-01]

H10P 54/40

by sawing, e.g. using revolving or reciprocating blades [2026-01]

H10P 54/50

by scoring, breaking or cleaving [2026-01]

H10P 54/52

. .

{by cleaving} [2026-01]

WARNING

Group H10P 54/52 is incomplete pending reclassification of documents from groups H10P 10/12, H10P 52/00, H10P 58/00, H10P 90/1914 and H10P 90/1916.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 54/90

Auxiliary processes or arrangements [2026-01]

H10P 54/92

. .

for protecting or reinforcing the surface of wafers or substrates during cutting or separating, e.g. using adhesive tapes [2026-01]

WARNING

Group H10P 54/92 is incomplete pending reclassification of documents from group H10P 52/00.
Groups H10P 52/00 and H10P 54/92 should be considered in order to perform a complete search.

H10P 54/922

. . .

{Arrangements for stress mitigation, e.g. crack stops} [2026-01]

H10P 54/924

. . .

{using expanding wafer tapes} [2026-01]

H10P 54/94

. .

After-treatments, e.g. removal of adhesive tapes or supports [2026-01]

H10P 56/00

Debonding of wafers, substrates or parts of devices [2026-01]

NOTE

{debonding means separation at the bonding interface following a previous bonding step}

WARNING

Group H10P 56/00 is incomplete pending reclassification of documents from groups H10P 10/12 and H10P 90/00.
Groups H10P 10/12, H10P 90/00 and H10P 56/00 should be considered in order to perform a complete search.

H10P 58/00

Singulating wafers or substrates into multiple chips, i.e. dicing [2026-01]

NOTE

When classifying in this group, any process step involving cutting or separating, which is considered to represent information of interest for search, may also be classified in group H10P 54/00.

WARNING

Group H10P 58/00 is impacted by reclassification into groups H10P 58/20 - H10P 58/22, H10P 54/00, H10P 54/20, H10P 54/30, H10P 54/40, H10P 54/50 - H10P 54/52, H10P 54/90, H10P 54/922, H10P 54/924 and H10P 54/94.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 58/20

{comprising two or more processes, e.g. etching and cutting} [2026-01]

WARNING

Groups H10P 58/20 and H10P 58/22 are incomplete pending reclassification of documents from group H10P 58/00.
Groups H10P 58/00, H10P 58/20 and H10P 58/22 should be considered in order to perform a complete search.

H10P 58/22

. .

{characterised by the singulation processes being performed on multiple sides of the wafer or substrate} [2026-01]

Other manufacture or treatment [2026-01]

H10P 70/00

Cleaning of wafers, substrates or parts of devices [2026-01]

NOTE

This group does not cover the cleaning of package elements, package parts or other constructional details, e.g. cleaning of packages after moulding, which are covered by the related groups of subclass H10W.

H10P 70/10

{Cleaning before device manufacture, i.e. Begin-Of-Line process} [2026-01]

H10P 70/12

. .

{by dry cleaning only (H10P 70/52 takes precedence)} [2026-01]

H10P 70/125

. . .

{with gaseous HF} [2026-01]

H10P 70/15

. .

{by wet cleaning only (H10P 70/52 takes precedence)} [2026-01]

H10P 70/18

. .

{by combined dry cleaning and wet cleaning (H10P 70/52 takes precedence)} [2026-01]

H10P 70/20

{Cleaning during device manufacture} [2026-01]

H10P 70/23

. .

{during, before or after processing of insulating materials} [2026-01]

H10P 70/234

. . .

{the processing being the formation of vias or contact holes} [2026-01]

H10P 70/237

. . .

{the processing being a planarisation of insulating layers} [2026-01]

H10P 70/27

. .

{during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers} [2026-01]

H10P 70/273

. . .

{the processing being a delineation of conductive layers, e.g. by RIE} [2026-01]

H10P 70/277

. . .

{the processing being a planarisation of conductive layers} [2026-01]

H10P 70/30

{Cleaning after the substrates have been singulated} [2026-01]

H10P 70/40

{Cleaning for reclaiming} [2026-01]

H10P 70/50

{characterised by the part to be cleaned} [2026-01]

H10P 70/52

. .

{Cleaning of diamond} [2026-01]

H10P 70/54

. .

{Cleaning of wafer edges} [2026-01]

H10P 70/56

. .

{Cleaning of wafer backside} [2026-01]

H10P 70/58

. .

{Cleaning of porous materials} [2026-01]

H10P 70/60

{Cleaning only by mechanical processes} [2026-01]

H10P 70/70

{Cleaning only by lasers processes, e.g. laser ablation} [2026-01]

H10P 70/80

{Cleaning only by supercritical fluids} [2026-01]

H10P 72/00

Handling or holding of wafers, substrates or devices during manufacture or treatment thereof [2026-01]

H10P 72/04

{Apparatus for manufacture or treatment} [2026-01]

H10P 72/0402

. .

{Apparatus for fluid treatment (H10P 72/0441, H10P 72/0448 take precedence)} [2026-01]

H10P 72/0404

. . .

{for general liquid treatment, e.g. etching followed by cleaning} [2026-01]

H10P 72/0406

. . .

{for cleaning followed by drying, rinsing, stripping, blasting or the like} [2026-01]

H10P 72/0408

. . . .

{for drying} [2026-01]

H10P 72/0411

. . . .

{for wet cleaning or washing} [2026-01]

H10P 72/0412

. . . . .

{using mainly scrubbing means, e.g. brushes} [2026-01]

H10P 72/0414

. . . . .

{using mainly spraying means, e.g. nozzles} [2026-01]

H10P 72/0416

. . . . .

{with the semiconductor substrates being dipped in baths or vessels} [2026-01]

H10P 72/0418

. . .

{for etching} [2026-01]

H10P 72/0421

. . . .

{for drying etching} [2026-01]

H10P 72/0422

. . . .

{for wet etching} [2026-01]

H10P 72/0424

. . . . .

{using mainly spraying means, e.g. nozzles} [2026-01]

H10P 72/0426

. . . . .

{with the semiconductor substrates being dipped in baths or vessels} [2026-01]

H10P 72/0428

. .

{Apparatus for mechanical treatment or grinding or cutting} [2026-01]

H10P 72/0431

. .

{Apparatus for thermal treatment} [2026-01]

H10P 72/0432

. . .

{mainly by conduction} [2026-01]

H10P 72/0434

. . .

{mainly by convection} [2026-01]

H10P 72/0436

. . .

{mainly by radiation} [2026-01]

H10P 72/0438

. .

{Apparatus for making assemblies not otherwise provided for, e.g. package constructions} [2026-01]

H10P 72/0441

. .

{Apparatus for sealing, encapsulating, glassing, decapsulating or the like} [2026-01]

H10P 72/0442

. .

{Apparatus for placing on an insulating substrate, e.g. tape} [2026-01]

H10P 72/0444

. .

{Apparatus for wiring semiconductor or solid-state device} [2026-01]

H10P 72/0446

. .

{Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates} [2026-01]

H10P 72/0448

. .

{Apparatus for applying a liquid, a resin, an ink or the like} [2026-01]

H10P 72/0451

. .

{Apparatus for manufacturing or treating in a plurality of work-stations} [2026-01]

H10P 72/0452

. . .

{characterised by the layout of the process chambers} [2026-01]

H10P 72/0454

. . . .

{surrounding a central transfer chamber} [2026-01]

H10P 72/0456

. . . .

{in-line arrangement} [2026-01]

H10P 72/0458

. . . .

{vertical arrangement} [2026-01]

H10P 72/0461

. . .

{characterised by the presence of two or more transfer chambers} [2026-01]

H10P 72/0462

. . .

{characterised by the construction of the processing chambers, e.g. modular processing chambers} [2026-01]

H10P 72/0464

. . .

{characterised by the construction of the transfer chamber} [2026-01]

H10P 72/0466

. . .

{characterised by the construction of the load-lock chamber} [2026-01]

H10P 72/0468

. . .

{comprising a chamber adapted to a particular process} [2026-01]

H10P 72/0471

. . . .

{comprising at least one ion or electron beam chamber} [2026-01]

H10P 72/0472

. . . .

{comprising at least one polishing chamber} [2026-01]

H10P 72/0474

. . . .

{comprising at least one lithography chamber} [2026-01]

H10P 72/0476

. . . .

{comprising at least one plating chamber} [2026-01]

H10P 72/0478

. .

{the substrates being processed being not semiconductor wafers, e.g. leadframes or chips} [2026-01]

H10P 72/06

{Apparatus for monitoring, sorting, marking, testing or measuring} [2026-01]

H10P 72/0602

. .

{Temperature monitoring} [2026-01]

H10P 72/0604

. .

{Process monitoring, e.g. flow or thickness monitoring} [2026-01]

H10P 72/0606

. .

{Position monitoring, e.g. misposition detection or presence detection} [2026-01]

H10P 72/0608

. . .

{of substrates stored in a container, a magazine, a carrier, a boat or the like} [2026-01]

H10P 72/0611

. .

{Sorting devices} [2026-01]

H10P 72/0612

. .

{Production flow monitoring, e.g. for increasing throughput} [2026-01]

H10P 72/0614

. .

{Marking devices} [2026-01]

H10P 72/0616

. .

{Monitoring of warpages, curvatures, damages, defects or the like} [2026-01]

H10P 72/0618

. .

{using identification means, e.g. labels on substrates or labels on containers} [2026-01]

H10P 72/10

using carriers specially adapted therefor, e.g. front opening unified pods [FOUP] [2026-01]

H10P 72/12

. .

{Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements} [2026-01]

H10P 72/123

. . .

{characterised by a material, a roughness, a coating or the like} [2026-01]

H10P 72/127

. . .

{characterised by the substrate support} [2026-01]

H10P 72/13

. .

{Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements} [2026-01]

H10P 72/135

. . .

{characterised by a material, a roughness, a coating or the like} [2026-01]

H10P 72/14

. .

{Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls} [2026-01]

H10P 72/145

. . .

{characterised by a material, a roughness, a coating or the like} [2026-01]

H10P 72/15

. .

{Horizontal carrier comprising wall type elements whereby the substrates are vertically supported, e.g. comprising sidewalls} [2026-01]

H10P 72/155

. . .

{characterised by a material, a roughness, a coating or the like} [2026-01]

H10P 72/16

. .

{Trays for chips} [2026-01]

H10P 72/165

. . .

{characterised by a material, a roughness, a coating or the like} [2026-01]

H10P 72/17

. .

{specially adapted for supporting large square shaped substrates} [2026-01]

H10P 72/175

. . .

{characterised by a material, a roughness, a coating or the like} [2026-01]

H10P 72/18

. .

{characterised by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports} [2026-01]

H10P 72/19

. .

{closed carriers} [2026-01]

H10P 72/1902

. . .

{specially adapted for a single substrate} [2026-01]

H10P 72/1904

. . .

{specially adapted for containing chips, dies or ICs} [2026-01]

H10P 72/1906

. . .

{specially adapted for containing masks, reticles or pellicles} [2026-01]

H10P 72/1908

. . .

{specially adapted for containing substrates other than wafers} [2026-01]

H10P 72/1911

. . .

{characterised by materials, roughness, coatings or the like} [2026-01]

H10P 72/1912

. . . .

{characterised by shock absorbing elements, e.g. retainers or cushions} [2026-01]

H10P 72/1914

. . .

{characterised by locking systems} [2026-01]

H10P 72/1916

. . .

{characterised by sealing arrangements} [2026-01]

H10P 72/1918

. . .

{characterised by coupling elements, kinematic members, handles or elements to be externally gripped} [2026-01]

H10P 72/1921

. . .

{characterised by substrate supports} [2026-01]

H10P 72/1922

. . .

{characterised by the construction of the closed carrier} [2026-01]

H10P 72/1924

. . .

{characterised by atmosphere control} [2026-01]

H10P 72/1926

. . . .

{characterised by the presence of atmosphere modifying elements inside or attached to the closed carrier} [2026-01]

H10P 72/1928

. . . . .

{characterised by the presence of antistatic elements} [2026-01]

H10P 72/30

for conveying, e.g. between different workstations [2026-01]

H10P 72/32

. .

{between different workstations} [2026-01]

H10P 72/3202

. . .

{Mechanical details, e.g. rollers or belts} [2026-01]

H10P 72/3204

. . .

{using magnetic elements} [2026-01]

H10P 72/3206

. . .

{the substrate being handled substantially vertically} [2026-01]

H10P 72/3208

. . .

{Changing the direction of the conveying path} [2026-01]

H10P 72/3211

. . .

{Changing orientation of the substrate, e.g. from a horizontal position to a vertical position} [2026-01]

H10P 72/3212

. . .

{the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips or lead frames} [2026-01]

H10P 72/3214

. . .

{by means of a cart or a vehicle} [2026-01]

H10P 72/3216

. . .

{using a general scheme of a conveying path within a factory} [2026-01]

H10P 72/3218

. . .

{Conveying cassettes, containers or carriers} [2026-01]

H10P 72/3221

. . .

{Overhead conveying} [2026-01]

H10P 72/3222

. . .

{Loading to or unloading from a conveyor} [2026-01]

H10P 72/33

. .

{into and out of processing chamber} [2026-01]

H10P 72/3302

. . .

{Mechanical parts of transfer devices} [2026-01]

H10P 72/3304

. . .

{characterised by movements or sequence of movements of transfer devices} [2026-01]

H10P 72/3306

. . .

{Horizontal transfer of a single workpiece} [2026-01]

H10P 72/3308

. . .

{Vertical transfer of a single workpiece} [2026-01]

H10P 72/3311

. . .

{Horizontal transfer of a batch of workpieces} [2026-01]

H10P 72/3312

. . .

{Vertical transfer of a batch of workpieces} [2026-01]

H10P 72/3314

. . .

{Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers} [2026-01]

H10P 72/34

. .

{the wafers being stored in a carrier, involving loading and unloading} [2026-01]

H10P 72/3402

. . .

{Mechanical parts of transfer devices} [2026-01]

H10P 72/3404

. . .

{Storage means} [2026-01]

H10P 72/3406

. . .

{involving removal of lid, door or cover} [2026-01]

H10P 72/3408

. . .

{Docking arrangements} [2026-01]

H10P 72/3411

. . .

{involving loading and unloading of wafers} [2026-01]

H10P 72/3412

. . . .

{Batch transfer of wafers} [2026-01]

H10P 72/36

. .

{using air tracks} [2026-01]

H10P 72/3602

. . .

{with angular orientation of the workpieces} [2026-01]

H10P 72/3604

. . .

{the workpieces being stored in a carrier, involving loading and unloading} [2026-01]

H10P 72/37

. .

{with orientating and positioning by means of a vibratory bowl or track} [2026-01]

H10P 72/38

. .

{with angular orientation of workpieces} [2026-01]

H10P 72/50

for positioning, orientation or alignment [2026-01]

H10P 72/53

. .

{using optical controlling means} [2026-01]

H10P 72/57

. .

{Mask-wafer alignment} [2026-01]

H10P 72/70

for supporting or gripping [2026-01]

WARNING

Group H10P 72/70 is impacted by reclassification into groups H10P 72/72, H10P 72/74 and H10P 72/7448 - H10P 72/745.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 72/72

. .

using electrostatic chucks [2026-01]

WARNING

Group H10P 72/72 is incomplete pending reclassification of documents from group H10P 72/70.
Groups H10P 72/70 and H10P 72/72 should be considered in order to perform a complete search.

H10P 72/722

. . .

{Details of electrostatic chucks} [2026-01]

H10P 72/74

. .

{using temporarily an auxiliary support} [2026-01]

WARNING

Groups H10P 72/74, H10P 72/7448 and H10P 72/745 are incomplete pending reclassification of documents from group H10P 72/70.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 72/7402

. . .

{Wafer tapes, e.g. grinding or dicing support tapes} [2026-01]

WARNING

Group H10P 72/7402 is impacted by reclassification into groups H10P 72/7404 and H10P 72/7406.
Groups H10P 72/7402, H10P 72/7404 and H10P 72/7406 should be considered in order to perform a complete search.

H10P 72/7404

. . . .

{the wafer tape being a laminate of three or more layers, e.g. including additional layers beyond a base layer and an uppermost adhesive layer} [2026-01]

WARNING

Groups H10P 72/7404 and H10P 72/7406 are incomplete pending reclassification of documents from group H10P 72/7402.
Groups H10P 72/7402, H10P 72/7404 and H10P 72/7406 should be considered in order to perform a complete search.

H10P 72/7406

. . . . .

{the wafer tape being a laminate of four or more layers, e.g. including two or more additional layers beyond a base layer and an uppermost adhesive layer} [2026-01]

H10P 72/7408

. . .

{the auxiliary support including alignment aids} [2026-01]

H10P 72/741

. . .

{the auxiliary support including a cavity for storing a finished or partly finished device during manufacturing or mounting, e.g. for an IC package or for a chip} [2026-01]

H10P 72/7412

. . .

{the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support} [2026-01]

H10P 72/7414

. . . .

{the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support} [2026-01]

H10P 72/7416

. . .

{used during dicing or grinding} [2026-01]

H10P 72/7418

. . . .

{of passive members, e.g. a chip mounting substrate} [2026-01]

H10P 72/742

. . . .

{involving stretching of the auxiliary support post dicing} [2026-01]

H10P 72/7422

. . .

{used to protect an active side of a device or wafer} [2026-01]

H10P 72/7424

. . .

{used as a support during the manufacture of self-supporting substrates} [2026-01]

H10P 72/7426

. . .

{used as a support during build up manufacturing of active devices} [2026-01]

H10P 72/7428

. . .

{used to support diced chips prior to mounting} [2026-01]

H10P 72/743

. . .

{used as a support during manufacture of interconnect decals or build up layers} [2026-01]

H10P 72/7432

. . .

{used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate} [2026-01]

H10P 72/7434

. . .

{used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate} [2026-01]

H10P 72/7436

. . .

{used to support a device or a wafer when forming electrical connections thereto} [2026-01]

H10P 72/7438

. . .

{with parts of the auxiliary support remaining in the finished device} [2026-01]

H10P 72/744

. . .

{Details of chemical or physical process used for separating the auxiliary support from a device or a wafer} [2026-01]

H10P 72/7442

. . . .

{Separation by peeling} [2026-01]

H10P 72/7444

. . . . .

{using a peeling wedge, a knife or a bar} [2026-01]

H10P 72/7446

. . . . .

{using a peeling wheel} [2026-01]

H10P 72/7448

. . .

{the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer} [2026-01]

H10P 72/745

. . . .

{the bond interface between the auxiliary support and the wafer comprises three or more layers} [2026-01]

H10P 72/76

. .

using mechanical means, e.g. clamps or pinches [2026-01]

H10P 72/7602

. . .

{the wafers being placed on a robot blade or gripped by a gripper for conveyance} [2026-01]

H10P 72/7604

. . .

{the wafers being placed on a susceptor, stage or support} [2026-01]

H10P 72/7606

. . . .

{characterised by edge clamping, e.g. clamping ring} [2026-01]

H10P 72/7608

. . . .

{characterised by a plurality of separate clamping members, e.g. clamping fingers} [2026-01]

H10P 72/7611

. . . .

{characterised by edge profile or support profile} [2026-01]

H10P 72/7612

. . . .

{characterised by lifting arrangements, e.g. lift pins} [2026-01]

H10P 72/7614

. . . .

{characterised by a plurality of individual support members, e.g. support posts or protrusions} [2026-01]

H10P 72/7616

. . . .

{characterised by a coating, a hardness or a material} [2026-01]

H10P 72/7618

. . . .

{characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel} [2026-01]

H10P 72/7621

. . . .

{characterised by supporting two or more semiconductor substrates} [2026-01]

H10P 72/7622

. . . .

{characterised by supporting substrates others than wafers, e.g. chips} [2026-01]

H10P 72/7624

. . . .

{characterised by the mechanical construction of the susceptor, stage or support} [2026-01]

H10P 72/7626

. . . .

{characterised by the construction of the shaft} [2026-01]

H10P 72/78

. .

using vacuum or suction, e.g. Bernoulli chucks [2026-01]

H10P 74/00

Testing or measuring during manufacture or treatment of wafers, substrates or devices [2026-01]

H10P 74/20

characterised by the properties tested or measured, e.g. structural or electrical properties [2026-01]

H10P 74/203

. .

{Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} [2026-01]

H10P 74/207

. .

{Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics} [2026-01]

H10P 74/23

{characterised by multiple measurements, corrections, marking or sorting processes} [2026-01]

H10P 74/232

. .

{comprising connection or disconnection of parts of a device in response to a measurement} [2026-01]

H10P 74/235

. .

{comprising optical enhancement of defects or not-directly-visible states} [2026-01]

H10P 74/238

. .

{comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement} [2026-01]

H10P 74/27

{Structural arrangements therefor} [2026-01]

H10P 74/273

. .

{Interconnections for measuring or testing, e.g. probe pads} [2026-01]

H10P 74/277

. .

{Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers} [2026-01]

H10P 76/00

Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography [2026-01]

H10P 76/20

of masks comprising organic materials [2026-01]

H10P 76/202

. .

{for lift-off processes} [2026-01]

H10P 76/204

. .

{of organic photoresist masks} [2026-01]

H10P 76/2041

. . .

{Photolithographic processes} [2026-01]

H10P 76/2042

. . . .

{using lasers} [2026-01]

H10P 76/2043

. . . .

{using an anti-reflective coating} [2026-01]

H10P 76/2045

. . .

{Electron beam lithography processes} [2026-01]

H10P 76/2047

. . .

{X-ray beam lithography processes} [2026-01]

H10P 76/2049

. . .

{Ion beam lithography processes} [2026-01]

H10P 76/40

of masks comprising inorganic materials [2026-01]

H10P 76/403

. .

{for lift-off processes} [2026-01]

H10P 76/405

. .

{characterised by their composition, e.g. multilayer masks} [2026-01]

H10P 76/408

. .

{characterised by their sizes, orientations, dispositions, behaviours or shapes} [2026-01]

H10P 76/4083

. . .

{characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks} [2026-01]

H10P 76/4085

. . .

{characterised by the processes involved to create the masks} [2026-01]

H10P 76/4088

. . .

{Processes for improving the resolution of the masks} [2026-01]

H10P 90/00

Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement [2026-01]

NOTES

This group covers multistep processes for the preparation of wafers before the subsequent manufacture of semiconductor devices or solid-state devices therein or thereon.
This group does not cover the single-crystal growth of semiconductor ingots, which is covered by subclass C30B.

WARNING

Group H10P 90/00 is impacted by reclassification into groups H10P 90/19, H10P 90/1902, H10P 90/1904, H10P 90/1906, H10P 90/21 - H10P 90/212, H10P 90/22, H10P 90/24, H10P 56/00 and H10P 10/12.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 90/12

{Preparing bulk and homogeneous wafers} [2026-01]

H10P 90/123

. .

{by grinding or lapping} [2026-01]

H10P 90/124

. .

{by processing the backside of the wafers} [2026-01]

H10P 90/126

. .

{by chemical etching} [2026-01]

H10P 90/128

. .

{by edge treatment, e.g. chamfering} [2026-01]

H10P 90/129

. .

{by polishing} [2026-01]

H10P 90/14

. .

{by setting crystal orientation} [2026-01]

H10P 90/15

. .

{by making porous regions on the surface} [2026-01]

H10P 90/16

. .

{by reclaiming or re-processing} [2026-01]

H10P 90/18

. .

{by shaping} [2026-01]

H10P 90/19

{Preparing inhomogeneous wafers} [2026-01]

WARNING

Groups H10P 90/19, H10P 90/1902, H10P 90/1904 and H10P 90/1906 are incomplete pending reclassification of documents from group H10P 90/00.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 90/1902

. .

{Preparing horizontally inhomogeneous wafers} [2026-01]

H10P 90/1904

. .

{Preparing vertically inhomogeneous wafers} [2026-01]

H10P 90/1906

. . .

{Preparing SOI wafers} [2026-01]

H10P 90/1908

. . . .

{using silicon implanted buried insulating layers, e.g. oxide layers [SIMOX]} [2026-01]

H10P 90/191

. . . .

{using full isolation by porous oxide silicon [FIPOS]} [2026-01]

H10P 90/1912

. . . .

{using selective deposition, e.g. epitaxial lateral overgrowth [ELO] or selective deposition of single crystal silicon} [2026-01]

H10P 90/1914

. . . .

{using bonding} [2026-01]

WARNING

Group H10P 90/1914 is incomplete pending reclassification of documents from group H10P 10/12. Group H10P 90/1914 is also impacted by reclassification into groups H10P 10/126, H10P 10/128 - H10P 10/1285, H10P 10/14, H10P 54/52 and H10P 90/1918 - H10P 90/192.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 90/1916

. . . . .

{with separation or delamination along an ion implanted layer, e.g. Smart-cut} [2026-01]

WARNING

Group H10P 90/1916 is incomplete pending reclassification of documents from group H10P 10/12. Group H10P 90/1916 is also impacted by reclassification into groups H10P 10/126, H10P 10/128 - H10P 10/1285, H10P 10/14, H10P 54/52 and H10P 90/1918 - H10P 90/192.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 90/1918

. . . . .

{including charge trapping layers, e.g. polycrystalline materials} [2026-01]

WARNING

Groups H10P 90/1918 and H10P 90/192 are incomplete pending reclassification of documents from groups H10P 90/1914 and H10P 90/1916.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 90/192

. . . . . .

{irregularly shaped charge trapping layers} [2026-01]

H10P 90/1922

. . . .

{using silicon etch back techniques, e.g. BESOI or ELTRAN} [2026-01]

H10P 90/1924

. . . .

{with separation/delamination along a porous layer} [2026-01]

H10P 90/21

{by transferring two-dimensional materials} [2026-01]

WARNING

Groups H10P 90/21 and H10P 90/212 are incomplete pending reclassification of documents from group H10P 90/00.
Groups H10P 90/00, H10P 90/21 and H10P 90/212 should be considered in order to perform a complete search.

H10P 90/212

. .

{by transferring of graphene} [2026-01]

H10P 90/22

{by transferring layers from a donor substrate to a final substrate utilising a temporary handle substrate as an intermediary} [2026-01]

WARNING

Group H10P 90/22 is incomplete pending reclassification of documents from group H10P 90/00.
Groups H10P 90/00 and H10P 90/22 should be considered in order to perform a complete search.

H10P 90/24

{by concurrent transfer of multiple parts} [2026-01]

WARNING

Group H10P 90/24 is incomplete pending reclassification of documents from group H10P 90/00.
Groups H10P 90/00 and H10P 90/24 should be considered in order to perform a complete search.

H10P 95/00

Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass [2026-01]

WARNING

Group H10P 95/00 is incomplete pending reclassification of documents from groups H10P 10/00 and H10P 50/00. Group H10P 95/00 is also impacted by reclassification into groups H10P 95/02, H10P 95/04, H10P 95/06 - H10P 95/066, H10P 95/08, H10P 95/11 - H10P 95/112, H10P 95/40 - H10P 95/408, H10P 95/50, H10P 95/60, H10P 95/70, H10P 95/80 and H10P 95/90.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 95/02

{Planarisation of semiconductor materials} [2026-01]

WARNING

Group H10P 95/02 is incomplete pending reclassification of documents from groups H10P 50/00, H10P 95/00, H10P 95/60 and H10P 95/70.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 95/04

{Planarisation of conductive or resistive materials} [2026-01]

WARNING

Group H10P 95/04 is incomplete pending reclassification of documents from group H10P 95/00.
Groups H10P 95/00 and H10P 95/04 should be considered in order to perform a complete search.

H10P 95/06

{Planarisation of inorganic insulating materials} [2026-01]

WARNING

Groups H10P 95/06, H10P 95/064 and H10P 95/066 are incomplete pending reclassification of documents from group H10P 95/00.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 95/062

. .

{involving a dielectric removal step} [2026-01]

WARNING

Group H10P 95/062 is incomplete pending reclassification of documents from group H10P 95/00. Group H10P 95/062 is also impacted by reclassification into groups H10P 52/407 and H10P 52/207.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 95/064

. . .

{the removal being chemical etching} [2026-01]

H10P 95/066

. . . .

{the removal being a selective chemical etching step, e.g. selective dry etching through a mask} [2026-01]

H10P 95/08

{Planarisation of organic insulating materials} [2026-01]

WARNING

Group H10P 95/08 is incomplete pending reclassification of documents from group H10P 95/00. Group H10P 95/08 is also impacted by reclassification into groups H10P 52/209 and H10P 52/409.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 95/11

{Separation of active layers from substrates} [2026-01]

WARNING

Groups H10P 95/11 and H10P 95/112 are incomplete pending reclassification of documents from group H10P 95/00.
Groups H10P 95/00, H10P 95/11 and H10P 95/112 should be considered in order to perform a complete search.

H10P 95/112

. .

{leaving a reusable substrate, e.g. epitaxial lift off} [2026-01]

H10P 95/40

Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections [2026-01]

WARNING

Group H10P 95/40 is incomplete pending reclassification of documents from groups H10P 36/00 and H10P 95/00.
Groups H10P 36/00, H10P 95/00 and H10P 95/40 should be considered in order to perform a complete search.

H10P 95/402

. .

{of silicon bodies} [2026-01]

WARNING

Group H10P 95/402 is incomplete pending reclassification of documents from groups H10P 36/03 and H10P 95/00.
Groups H10P 36/03, H10P 95/00 and H10P 95/402 should be considered in order to perform a complete search.

H10P 95/405

. . .

{using cavities formed by hydrogen or noble gas ion implantation} [2026-01]

WARNING

Group H10P 95/405 is incomplete pending reclassification of documents from group H10P 95/00.
Groups H10P 95/00 and H10P 95/405 should be considered in order to perform a complete search.

H10P 95/408

. .

{of Group III-V semiconductors, e.g. to render them semi-insulating} [2026-01]

WARNING

Group H10P 95/408 is incomplete pending reclassification of documents from group H10P 95/00.
Groups H10P 95/00 and H10P 95/408 should be considered in order to perform a complete search.

H10P 95/50

{Alloying conductive materials with semiconductor bodies} [2026-01]

WARNING

Group H10P 95/50 is incomplete pending reclassification of documents from group H10P 95/00.
Groups H10P 95/00 and H10P 95/50 should be considered in order to perform a complete search.

H10P 95/60

Mechanical treatments, e.g. by ultrasounds [2026-01]

WARNING

Group H10P 95/60 is incomplete pending reclassification of documents from groups H10P 52/00 and H10P 95/00. Group H10P 95/60 is also impacted by reclassification into group H10P 95/02.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 95/70

Chemical treatments [2026-01]

WARNING

Group H10P 95/70 is incomplete pending reclassification of documents from groups H10P 14/60, H10P 50/00 and H10P 95/00. Group H10P 95/70 is also impacted by reclassification into groups H10P 95/80 and H10P 95/02.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 95/80

Electrical treatments, e.g. for electroforming [2026-01]

WARNING

Group H10P 95/80 is incomplete pending reclassification of documents from groups H10P 14/60, H10P 95/00 and H10P 95/70.
All groups listed in this Warning should be considered in order to perform a complete search.

H10P 95/90

Thermal treatments, e.g. annealing or sintering [2026-01]

WARNING

Group H10P 95/90 is incomplete pending reclassification of documents from group H10P 95/00. Group H10P 95/90 is also impacted by reclassification into group H10P 30/28.
Groups H10P 95/00, H10P 95/90 and H10P 30/28 should be considered in order to perform a complete search.

H10P 95/902

. .

{for the formation of PN junctions without addition of impurities} [2026-01]

H10P 95/904

. .

{of Group III-V semiconductors} [2026-01]

WARNING

Group H10P 95/904 is impacted by reclassification into group H10P 30/28.
Groups H10P 95/904 and H10P 30/28 should be considered in order to perform a complete search.

H10P 95/906

. .

{for altering the shape of semiconductors, e.g. smoothing the surface} [2026-01]

H10P 95/92

{Formation of n- or p-type semiconductors, e.g. doping of graphene} [2026-01]

WARNING

Group H10P 95/92 is impacted by reclassification into group H10P 32/173.
Groups H10P 95/92 and H10P 32/173 should be considered in order to perform a complete search.

H10P 95/94

{Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma} [2026-01]

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