Version: 2024.08
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CPC | COOPERATIVE PATENT CLASSIFICATION | |||
| H03B | GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS (generators adapted for electrophonic musical instruments G10H; masers or lasers H01S; generation of oscillations in plasma H05H) [2024-01] WARNING
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H03B 1/00 | Details [2013-01] |
H03B 5/00 | Generation of oscillations using amplifier with regenerative feedback from output to input (H03B 9/00, H03B 15/00 take precedence) [2013-01] |
H03B 5/02 | . | Details [2013-01] |
H03B 5/04 | . . | Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature [2013-01] |
H03B 5/06 | . . | Modifications of generator to ensure starting of oscillations [2013-01] |
H03B 5/08 | . | with frequency-determining element comprising lumped inductance and capacitance [2013-01] |
H03B 5/10 | . . |
H03B 5/12 | . . |
H03B 5/1203 | . . . | {the amplifier being a single transistor} [2013-01] |
H03B 5/1206 | . . . | {using multiple transistors for amplification} [2013-01] |
H03B 5/1209 | . . . . | {the amplifier having two current paths operating in a differential manner and a current source or degeneration circuit in common to both paths, e.g. a long-tailed pair. (H03B 5/1215 takes precedence)} [2016-08] |
H03B 5/1212 | . . . . | {the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair} [2013-01] |
H03B 5/1215 | . . . . . | {the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair} [2013-01] |
H03B 5/1218 | . . . . | {the generator being of the balanced type} [2013-01] |
H03B 5/1221 | . . . . | {the amplifier comprising multiple amplification stages connected in cascade} [2013-01] |
H03B 5/1225 | . . . . | {the generator comprising multiple amplifiers connected in parallel} [2013-01] |
H03B 5/1228 | . . . | {the amplifier comprising one or more field effect transistors} [2013-01] |
H03B 5/1231 | . . . | {the amplifier comprising one or more bipolar transistors} [2013-01] |
H03B 5/1234 | . . . | {and comprising means for varying the output amplitude of the generator (H03B 5/1278 takes precedence)} [2013-01] |
H03B 5/1237 | . . . | {comprising means for varying the frequency of the generator} [2013-01] |
H03B 5/124 | . . . . | {the means comprising a voltage dependent capacitance} [2013-01] |
H03B 5/1243 | . . . . . | {the means comprising voltage variable capacitance diodes} [2013-01] |
H03B 5/1246 | . . . . . | {the means comprising transistors used to provide a variable capacitance} [2013-01] |
H03B 5/125 | . . . . . . | {the transistors being bipolar transistors} [2013-01] |
H03B 5/1253 | . . . . . . | {the transistors being field-effect transistors} [2013-01] |
H03B 5/1256 | . . . . | {the means comprising a variable inductance} [2013-01] |
H03B 5/1259 | . . . . . | {the means comprising a variable active inductor, e.g. gyrator circuits} [2016-08] |
H03B 5/1262 | . . . . | {the means comprising switched elements} [2013-01] |
H03B 5/1265 | . . . . . | {switched capacitors} [2013-01] |
H03B 5/1268 | . . . . . | {switched inductors} [2013-01] |
H03B 5/1271 | . . . . | {the frequency being controlled by a control current, i.e. current controlled oscillators} [2016-08] |
H03B 5/1275 | . . . . | {having further means for varying a parameter in dependence on the frequency} [2013-01] |
H03B 5/1278 | . . . . . | {the parameter being an amplitude of a signal, e.g. maintaining a constant output amplitude over the frequency range} [2013-01] |
H03B 5/1281 | . . . . . | {the parameter being the amount of feedback} [2013-01] |
H03B 5/1284 | . . . . . | {the parameter being another frequency, e.g. a harmonic of the oscillating frequency} [2013-01] |
H03B 5/1287 | . . . . . | {the parameter being a quality factor, e.g. Q factor of the frequency determining element} [2013-01] |
H03B 5/129 | . . . . . | {the parameter being a bias voltage or a power supply} [2013-01] |
H03B 5/1293 | . . . . | {having means for achieving a desired tuning characteristic, e.g. linearising the frequency characteristic across the tuning voltage range} [2016-08] |
H03B 5/1296 | . . . | {the feedback circuit comprising a transformer} [2013-01] |
H03B 5/14 | . . | frequency-determining element connected via bridge circuit to closed ring around which signal is transmitted [2013-01] |
H03B 5/16 | . . . | active element in amplifier being vacuum tube [2013-01] |
H03B 5/18 | . | with frequency-determining element comprising distributed inductance and capacitance [2013-01] |
H03B 5/1805 | . . | {the frequency-determining element being a coaxial resonator} [2013-01] |
H03B 5/1811 | . . . | {the active element in the amplifier being a vacuum tube (see provisionally also H03B 5/1835)} [2013-01] |
H03B 5/1817 | . . | {the frequency-determining element being a cavity resonator} [2013-01] |
H03B 5/1823 | . . . | {the active element in the amplifier being a semiconductor device} [2013-01] |
H03B 5/1829 | . . . . | {the semiconductor device being a field-effect device} [2013-01] |
H03B 5/1835 | . . . | {the active element in the amplifier being a vacuum tube} [2013-01] |
H03B 5/1841 | . . | {the frequency-determining element being a strip line resonator (H03B 5/1805, H03B 5/1817, H03B 5/1864 and H03B 5/1882 take precedence)} [2013-01] |
H03B 5/1847 | . . . | {the active element in the amplifier being a semiconductor device} [2013-01] |
H03B 5/1858 | . . . | {the active element in the amplifier being a vacuum tube (see provisionally also H03B 5/1835)} [2013-01] |
H03B 5/1864 | . . | {the frequency-determining element being a dielectric resonator} [2013-01] |
H03B 5/187 | . . . | {the active element in the amplifier being a semiconductor device} [2013-01] |
H03B 5/1876 | . . . . | {the semiconductor device being a field-effect device} [2013-01] |
H03B 5/1882 | . . | {the frequency-determining element being a magnetic-field sensitive resonator, e.g. a Yttrium Iron Garnet or a magnetostatic surface wave resonator} [2013-01] |
H03B 5/1888 | . . . | {the active element in the amplifier being a semiconductor device} [2013-01] |
H03B 5/1894 | . . . . | {the semiconductor device being a field-effect device} [2013-01] |
H03B 5/20 | . | with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator [2013-01] |
H03B 5/22 | . . |
H03B 5/24 | . . |
H03B 5/28 | . . . | active element in amplifier being vacuum tube [2013-01] |
H03B 5/30 | . | with frequency-determining element being electromechanical resonator [2013-01] |
H03B 5/32 | . . |
H03B 5/323 | . . . | {the resonator having more than two terminals (H03B 5/326 takes precedence)} [2013-01] |
H03B 5/326 | . . . | {the resonator being an acoustic wave device, e.g. SAW or BAW device} [2013-01] |
H03B 5/34 | . . . |
H03B 5/36 | . . . | active element in amplifier being semiconductor device ({H03B 5/323, H03B 5/326} , H03B 5/38 take precedence) [2013-01] |
H03B 5/362 | . . . . | {the amplifier being a single transistor (H03B 5/364 - H03B 5/368 take precedence)} [2016-05] |
H03B 5/364 | . . . . | {the amplifier comprising field effect transistors (H03B 5/366 takes precedence)} [2013-01] |
H03B 5/366 | . . . . | {and comprising means for varying the frequency by a variable voltage or current} [2013-01] |
H03B 5/38 | . . . | frequency-determining element being connected via bridge circuit to closed ring around which signal is transmitted [2013-01] |
H03B 5/40 | . . | being a magnetostrictive resonator (H03B 5/42 takes precedence; selection of magneto-strictive material {H01F 1/00}; H10N 30/00) [2023-02] |
H03B 5/42 | . . | frequency-determining element connected via bridge circuit to closed ring around which signal is transmitted [2013-01] |
H03B 7/00 | Generation of oscillations using active element having a negative resistance between two of its electrodes (H03B 9/00 takes precedence) [2013-01] |
H03B 7/02 | . | with frequency-determining element comprising lumped inductance and capacitance [2013-01] |
H03B 7/04 | . . | active element being vacuum tube [2013-01] |
H03B 7/06 | . . | active element being semiconductor device [2013-01] |
H03B 7/10 | . . | active element being gas-discharge or arc-discharge tube [2013-01] |
H03B 7/12 | . | with frequency-determining element comprising distributed inductance and capacitance [2013-01] |
H03B 9/00 |
H03B 9/01 | . | using discharge tubes [2013-01] |
H03B 9/02 | . . |
H03B 9/04 | . . | using a klystron [2013-01] |
H03B 9/06 | . . . | using a reflex klystron [2013-01] |
H03B 9/08 | . . | using a travelling-wave tube [2013-01] |
H03B 9/10 | . . | using a magnetron [2013-01] |
H03B 9/12 | . | using solid state devices, e.g. Gunn-effect devices [2013-01] |
H03B 2009/123 | . . | {using Gunn diodes} [2013-01] |
H03B 2009/126 | . . | {using impact ionization avalanche transit time [IMPATT] diodes} [2013-01] |
H03B 9/14 | . . | and elements comprising distributed inductance and capacitance [2013-01] |
H03B 9/141 | . . . | {and comprising a voltage sensitive element, e.g. varactor} [2013-01] |
H03B 9/142 | . . . | {and comprising a magnetic field sensitive element, e.g. YIG} [2013-01] |
H03B 9/143 | . . . | {using more than one solid state device} [2013-01] |
H03B 9/145 | . . . | {the frequency being determined by a cavity resonator, e.g. a hollow waveguide cavity or a coaxial cavity (H03B 9/141 - H03B 9/143, H03B 9/147, H03B 9/148 take precedence)} [2016-05] |
H03B 9/146 | . . . . | {formed by a disc, e.g. a waveguide cap resonator} [2013-01] |
H03B 9/147 | . . . | {the frequency being determined by a stripline resonator (H03B 9/141 - H03B 9/143, H03B 9/148 take precedence)} [2016-05] |
H03B 9/148 | . . . | {the frequency being determined by a dielectric resonator (H03B 9/141 - H03B 9/143 take precedence)} [2016-05] |
H03B 11/00 |
H03B 11/02 | . |
H03B 11/04 | . | excited by interrupter [2013-01] |
H03B 11/06 | . . | by mechanical interrupter [2013-01] |
H03B 11/08 | . . | interrupter being discharge tube [2013-01] |
H03B 11/10 | . . | interrupter being semiconductor device [2013-01] |
H03B 13/00 | Generation of oscillations using deflection of electron beam in a cathode-ray tube [2013-01] |
H03B 15/00 | Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects [2018-01] |
H03B 15/003 | . | {using superconductivity effects (devices using superconductivity H10N 60/00)} [2023-02] |
H03B 15/006 | . | {using spin transfer effects or giant magnetoresistance} [2013-01] |
H03B 17/00 | Generation of oscillations using radiation source and detector, e.g. with interposed variable obturator [2013-01] |
H03B 19/00 | Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source (transference of modulation from one carrier to another H03D 7/00) [2013-01] |
H03B 19/03 | . | using non-linear inductance [2013-01] |
H03B 19/05 | . | using non-linear capacitance, e.g. varactor diodes [2013-01] |
H03B 19/06 | . | by means of discharge device or semiconductor device with more than two electrodes [2013-01] |
H03B 19/08 | . . | by means of a discharge device [2013-01] |
H03B 19/10 | . . . | using multiplication only [2013-01] |
H03B 19/12 | . . . | using division only [2013-01] |
H03B 19/14 | . . | by means of a semiconductor device [2013-01] |
H03B 19/16 | . | using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes [2013-01] |
H03B 19/18 | . . | and elements comprising distributed inductance and capacitance [2013-01] |
H03B 19/20 | . . | being diodes exhibiting charge storage or enhancement effects [2013-01] |
H03B 21/00 | Generation of oscillations by combining unmodulated signals of different frequencies (H03B 19/00 takes precedence; frequency changing circuits in general H03D) [2013-01] |
H03B 21/01 | . | by beating unmodulated signals of different frequencies [2013-01] |
H03B 23/00 | Generation of oscillations periodically swept over a predetermined frequency range (angle-modulating circuits in general H03C 3/00) [2013-01] |
H03B 25/00 | Simultaneous generation by a free-running oscillator of oscillations having different frequencies [2013-01] |
H03B 27/00 | Generation of oscillations providing a plurality of outputs of the same frequency but differing in phase, other than merely two anti-phase outputs [2013-01] |
H03B 28/00 | Generation of oscillations by methods not covered by groups H03B 5/00 - H03B 27/00, including modification of the waveform to produce sinusoidal oscillations (analogue function generators for performing computing operations G06G 7/26; use of transformers for conversion of waveform in ac-ac converters H02M 5/18) [2016-05] |
H03B 29/00 | Generation of noise currents and voltages {(gasfilled discharge tubes with solid cathode specially adapted as noise generators H01J 17/005)} [2013-01] |
H03B 2200/00 | Indexing scheme relating to details of oscillators covered by H03B [2013-01] |
H03B 2200/0002 | . | Types of oscillators [2013-01] |
H03B 2200/0004 | . . | Butler oscillator [2013-01] |
H03B 2200/0006 | . . | Clapp oscillator [2013-01] |
H03B 2200/0008 | . . | Colpitts oscillator [2013-01] |
H03B 2200/001 | . . | Hartley oscillator [2013-01] |
H03B 2200/0012 | . . | Pierce oscillator [2013-01] |
H03B 2200/0014 | . | Structural aspects of oscillators [2013-01] |
H03B 2200/0016 | . . | including a ring, disk or loop shaped resonator [2013-01] |
H03B 2200/0018 | . . | relating to the cutting angle of a crystal, e.g. AT cut quartz [2013-01] |
H03B 2200/002 | . . | making use of ceramic material [2013-01] |
H03B 2200/0022 | . . | characterised by the substrate, e.g. material [2013-01] |
H03B 2200/0024 | . . | including parallel striplines [2013-01] |
H03B 2200/0026 | . . | relating to the pins of integrated circuits [2013-01] |
H03B 2200/0028 | . . | based on a monolithic microwave integrated circuit [MMIC] [2013-01] |
H03B 2200/003 | . | Circuit elements of oscillators [2013-01] |
H03B 2200/0032 | . . | including a device with a Schottky junction [2013-01] |
H03B 2200/0034 | . . | including a buffer amplifier [2013-01] |
H03B 2200/0036 | . . | including an emitter or source coupled transistor pair or a long tail pair [2013-01] |
H03B 2200/0038 | . . | including a current mirror [2013-01] |
H03B 2200/004 | . . | including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor [2013-01] |
H03B 2200/0042 | . . . | the capacitance diode being in the feedback path [2013-01] |
H03B 2200/0044 | . . | including optical elements, e.g. optical injection locking [2016-08] |
H03B 2200/0046 | . . | including measures to switch the gain of an amplifier [2013-01] |
H03B 2200/0048 | . . | including measures to switch the frequency band, e.g. by harmonic selection [2013-01] |
H03B 2200/005 | . . | including measures to switch a capacitor [2013-01] |
H03B 2200/0052 | . . | including measures to switch the feedback circuit [2013-01] |
H03B 2200/0054 | . . | including measures to switch a filter, e.g. for frequency tuning or for harmonic selection [2013-01] |
H03B 2200/0056 | . . | including a diode used for switching [2013-01] |
H03B 2200/0058 | . . | with particular transconductance characteristics, e.g. an operational transconductance amplifier [2013-01] |
H03B 2200/006 | . | Functional aspects of oscillators [2013-01] |
H03B 2200/0062 | . . | Bias and operating point [2013-01] |
H03B 2200/0064 | . . | Pulse width, duty cycle or on/off ratio [2013-01] |
H03B 2200/0066 | . . | Amplitude or AM detection [2013-01] |
H03B 2200/0068 | . . | Frequency or FM detection [2013-01] |
H03B 2200/007 | . . | Generation of oscillations based on harmonic frequencies, e.g. overtone oscillators [2013-01] |
H03B 2200/0072 | . . | Frequency hopping and enabling of rapid frequency changes [2013-01] |
H03B 2200/0074 | . . | Locking of an oscillator by injecting an input signal directly into the oscillator [2013-01] |
H03B 2200/0076 | . . | Power combination of several oscillators oscillating at the same frequency [2013-01] |
H03B 2200/0078 | . . | generating or using signals in quadrature [2013-01] |
H03B 2200/008 | . . | making use of a reference frequency [2013-01] |
H03B 2200/0082 | . . | Lowering the supply voltage and saving power [2013-01] |
H03B 2200/0084 | . . | dedicated to Terahertz frequencies [2013-01] |
H03B 2200/0086 | . . | relating to the Q factor or damping of the resonant circuit [2013-01] |
H03B 2200/0088 | . . | Reduction of noise [2013-01] |
H03B 2200/009 | . . . | Reduction of phase noise [2013-01] |
H03B 2200/0092 | . . | Measures to linearise or reduce distortion of oscillator characteristics [2013-01] |
H03B 2200/0094 | . . | Measures to ensure starting of oscillations [2013-01] |
H03B 2200/0096 | . . | Measures to ensure stopping of oscillations [2013-01] |
H03B 2200/0098 | . . | having a balanced output signal [2013-01] |
H03B 2201/00 | Aspects of oscillators relating to varying the frequency of the oscillations [2013-01] |
H03B 2201/01 | . | Varying the frequency of the oscillations by manual means [2013-01] |
H03B 2201/011 | . . | the means being an element with a variable capacitance [2013-01] |
H03B 2201/012 | . . | the means being an element with a variable inductance [2013-01] |
H03B 2201/014 | . . | the means being associated with an element comprising distributed inductances and capacitances [2013-01] |
H03B 2201/015 | . . . | the element being a cavity [2013-01] |
H03B 2201/017 | . . . | the element being a dielectric resonator [2013-01] |
H03B 2201/018 | . . | the means being a manual switch [2013-01] |
H03B 2201/02 | . | Varying the frequency of the oscillations by electronic means [2013-01] |
H03B 2201/0208 | . . | the means being an element with a variable capacitance, e.g. capacitance diode [2013-01] |
H03B 2201/0216 | . . | the means being an element with a variable inductance [2013-01] |
H03B 2201/0225 | . . | the means being associated with an element comprising distributed inductances and capacitances [2013-01] |
H03B 2201/0233 | . . . | the element being a cavity [2013-01] |
H03B 2201/0241 | . . . | the element being a magnetically variable element, e.g. an Yttrium Iron Garnet [2013-01] |
H03B 2201/025 | . . | the means being an electronic switch for switching in or out oscillator elements [2013-01] |
H03B 2201/0258 | . . . | the means comprising a diode [2013-01] |
H03B 2201/0266 | . . . | the means comprising a transistor [2013-01] |
H03B 2201/0275 | . . | the means delivering several selected voltages or currents [2013-01] |
H03B 2201/0283 | . . . | the means functioning digitally [2013-01] |
H03B 2201/0291 | . . . . | and being controlled by a processing device, e.g. a microprocessor [2013-01] |
H03B 2201/03 | . | Varying beside the frequency also another parameter of the oscillator in dependence on the frequency [2013-01] |
H03B 2201/031 | . . | the parameter being the amplitude of a signal, e.g. maintaining a constant output amplitude over the frequency range [2013-01] |
H03B 2201/033 | . . | the parameter being the amount of feedback [2013-01] |
H03B 2201/035 | . . | the parameter being another frequency, e.g. a harmonic of the oscillating frequency [2013-01] |
H03B 2201/036 | . . | the parameter being the quality factor of a resonator [2013-01] |
H03B 2201/038 | . . | the parameter being a bias voltage or a power supply [2013-01] |
H03B 2202/00 | Aspects of oscillators relating to reduction of undesired oscillations [2013-01] |
H03B 2202/01 | . | Reduction of undesired oscillations originated from distortion in one of the circuit elements of the oscillator [2013-01] |
H03B 2202/012 | . . | the circuit element being the active device [2013-01] |
H03B 2202/015 | . . | the circuit element being a limiter [2013-01] |
H03B 2202/017 | . . | the circuit element being a frequency determining element [2013-01] |
H03B 2202/02 | . | Reduction of undesired oscillations originated from natural noise of the circuit elements of the oscillator [2013-01] |
H03B 2202/022 | . . | the noise being essentially white noise, i.e. frequency independent noise [2013-01] |
H03B 2202/025 | . . | the noise being coloured noise, i.e. frequency dependent noise [2013-01] |
H03B 2202/027 | . . . | the noise being essentially proportional to the inverse of the frequency, i.e. the so-called 1/f noise [2013-01] |
H03B 2202/03 | . | Reduction of undesired oscillations originated from internal parasitic couplings, i.e. parasitic couplings within the oscillator itself [2013-01] |
H03B 2202/04 | . | Reduction of undesired oscillations originated from outside noise or interferences, e.g. from parasitic couplings with circuit elements outside the oscillator [2013-01] |
H03B 2202/042 | . . | the circuit element belonging to the power supply [2013-01] |
H03B 2202/044 | . . | the circuit element belonging to transmitter circuitry [2013-01] |
H03B 2202/046 | . . | the circuit element belonging to receiver circuitry [2013-01] |
H03B 2202/048 | . . | the circuit element being a frequency divider [2013-01] |
H03B 2202/05 | . | Reduction of undesired oscillations through filtering or through special resonator characteristics [2013-01] |
H03B 2202/06 | . | Reduction of undesired oscillations through modification of a bias voltage, e.g. selecting the operation point of an active device [2013-01] |
H03B 2202/07 | . | Reduction of undesired oscillations through a cancelling of the undesired oscillation [2013-01] |
H03B 2202/073 | . . | by modifying the internal feedback of the oscillator [2013-01] |
H03B 2202/076 | . . | by using a feedback loop external to the oscillator, e.g. the so-called noise degeneration [2013-01] |
H03B 2202/08 | . | Reduction of undesired oscillations originated from the oscillator in circuit elements external to the oscillator by means associated with the oscillator [2013-01] |
H03B 2202/082 | . . | by avoiding coupling between these circuit elements [2013-01] |
H03B 2202/084 | . . . | through shielding [2013-01] |
H03B 2202/086 | . . . | through a frequency dependent coupling, e.g. which attenuates a certain frequency range [2013-01] |
H03B 2202/088 | . . | by compensating through additional couplings with these circuit elements [2013-01] |