Version: 2025.01
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CPC | COOPERATIVE PATENT CLASSIFICATION | |||
| H10F | INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION [2025-01] NOTES
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Photovoltaics [2025-01] |
| H10F 10/00 | Individual photovoltaic cells, e.g. solar cells (electrolytic light-sensitive devices, e.g. dye-sensitised solar cells, H01G 9/20) [2025-01] WARNING
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H10F 10/10 | . | having potential barriers [2025-01] |
H10F 10/11 | . . |
H10F 10/12 | . . | Photovoltaic cells having only metal-insulator-semiconductor [MIS] potential barriers [2025-01] |
H10F 10/13 | . . | Photovoltaic cells having absorbing layers comprising graded bandgaps [2025-01] |
H10F 10/14 | . . | Photovoltaic cells having only PN homojunction potential barriers [2025-01] |
H10F 10/142 | . . . | comprising multiple PN homojunctions, e.g. tandem cells [2025-01] |
H10F 10/1425 | . . . . | {Inverted metamorphic multi-junction [IMM] photovoltaic cells} [2025-01] |
H10F 10/144 | . . . | comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells [2025-01] |
H10F 10/146 | . . . | {Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side} [2025-01] |
H10F 10/148 | . . . | {Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells} [2025-01] |
H10F 10/16 | . . | Photovoltaic cells having only PN heterojunction potential barriers [2025-01] |
H10F 10/161 | . . . | comprising multiple PN heterojunctions, e.g. tandem cells [2025-01] |
H10F 10/162 | . . . | comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells [2025-01] |
H10F 10/163 | . . . | comprising only Group III-V materials, e.g. GaAs/AlGaAs or InP/GaInAs photovoltaic cells [2025-01] |
H10F 10/164 | . . . | comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells [2025-01] |
H10F 10/165 | . . . . | the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells [2025-01] |
H10F 10/166 | . . . . . | the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells [2025-01] |
H10F 10/167 | . . . | comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells [2025-01] |
H10F 10/169 | . . . | {comprising Cu2X/CdX heterojunctions, wherein X is a Group VI element, e.g. Cu2O/CdO PN heterojunction photovoltaic cells} [2025-01] |
H10F 10/17 | . . | Photovoltaic cells having only PIN junction potential barriers [2025-01] |
H10F 10/172 | . . . | comprising multiple PIN junctions, e.g. tandem cells [2025-01] |
H10F 10/174 | . . . | comprising monocrystalline or polycrystalline materials [2025-01] |
H10F 10/18 | . . | Photovoltaic cells having only Schottky potential barriers [2025-01] |
H10F 10/19 | . . | Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions [2025-01] |
| H10F 19/00 | Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F 10/00, e.g. photovoltaic modules [2025-01] WARNING
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H10F 19/10 | . | comprising photovoltaic cells in arrays in a single semiconductor substrate, the photovoltaic cells having vertical junctions or V-groove junctions [2025-01] |
H10F 19/20 | . | comprising photovoltaic cells in arrays in or on a single semiconductor substrate, the photovoltaic cells having planar junctions (having multiple thin-film photovoltaic cells deposited on the same substrate H10F 19/31) [2025-01] |
H10F 19/30 | . | comprising thin-film photovoltaic cells [2025-01] |
H10F 19/31 | . . | having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate [2025-01] |
H10F 19/33 | . . . | Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers [2025-01] |
H10F 19/35 | . . . | Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers [2025-01] |
H10F 19/37 | . . . | comprising means for obtaining partial light transmission through the integrated devices, or the assemblies of multiple devices, e.g. partially transparent thin-film photovoltaic modules for windows [2025-01] |
H10F 19/40 | . | comprising photovoltaic cells in a mechanically stacked configuration [2025-01] |
H10F 19/50 | . | Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components (H10F 19/75 takes precedence) [2025-01] |
H10F 19/70 | . |
H10F 19/75 | . . | the bypass diodes being integrated or directly associated with the photovoltaic cells, e.g. formed in or on the same substrate [2025-01] |
H10F 19/80 | . | Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells [2025-01] |
H10F 19/804 | . . | {Materials of encapsulations} [2025-01] |
H10F 19/807 | . . | {Double-glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets} [2025-01] |
H10F 19/85 | . . | Protective back sheets [2025-01] |
H10F 19/90 | . | Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers (between thin-film photovoltaic cells on a single substrate H10F 19/35) [2025-01] |
H10F 19/902 | . . | {for series or parallel connection of photovoltaic cells} [2025-01] |
H10F 19/904 | . . . | {characterised by the shapes of the structures} [2025-01] |
H10F 19/906 | . . . | {characterised by the materials of the structures} [2025-01] |
H10F 19/908 | . . . | {for back-contact photovoltaic cells} [2025-01] |
Radiation-controlled devices [2025-01] |
| H10F 30/00 | Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors [2025-01] WARNING
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H10F 30/10 | . | the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors [2025-01] |
H10F 30/15 | . . | {comprising amorphous semiconductors} [2025-01] |
H10F 30/20 | . | the devices having potential barriers, e.g. phototransistors [2025-01] |
H10F 30/21 | . . | the devices being sensitive to infrared, visible or ultraviolet radiation [2025-01] |
H10F 30/22 | . . . | the devices having only one potential barrier, e.g. photodiodes [2025-01] |
H10F 30/2205 | . . . . | {the potential barrier being a point contact} [2025-01] |
H10F 30/221 | . . . . | the potential barrier being a PN homojunction [2025-01] |
H10F 30/2212 | . . . . . | {the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes} [2025-01] |
H10F 30/2215 | . . . . . | {the devices comprising active layers made of only Group III-V materials} [2025-01] |
H10F 30/2218 | . . . . . | {the devices comprising active layers made of only Group IV-VI materials} [2025-01] |
H10F 30/222 | . . . . | the potential barrier being a PN heterojunction [2025-01] |
H10F 30/223 | . . . . | the potential barrier being a PIN barrier [2025-01] |
H10F 30/2235 | . . . . . | {the devices comprising Group IV amorphous materials} [2025-01] |
H10F 30/225 | . . . . | the potential barrier working in avalanche mode, e.g. avalanche photodiodes [2025-01] |
H10F 30/2255 | . . . . . | {in which the active layers form heterostructures, e.g. SAM structures} [2025-01] |
H10F 30/227 | . . . . | the potential barrier being a Schottky barrier [2025-01] |
H10F 30/2275 | . . . . . | {being a metal-semiconductor-metal [MSM] Schottky barrier} [2025-01] |
H10F 30/24 | . . . | the devices having only two potential barriers, e.g. bipolar phototransistors [2025-01] |
H10F 30/245 | . . . . | {Bipolar phototransistors} [2025-01] |
H10F 30/26 | . . . | the devices having three or more potential barriers, e.g. photothyristors [2025-01] |
H10F 30/263 | . . . . | {Photothyristors} [2025-01] |
H10F 30/2635 | . . . . . | {Static induction photothyristors} [2025-01] |
H10F 30/28 | . . . | the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors [2025-01] |
H10F 30/282 | . . . . | Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors [2025-01] |
H10F 30/2823 | . . . . | {the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD] (Insulated-gate field-effect transistors H10F 30/282)} [2025-01] |
H10F 30/283 | . . . . | {the devices having Schottky gates} [2025-01] |
H10F 30/2837 | . . . . . | {CCDs having Schottky gates} [2025-01] |
H10F 30/2843 | . . . . . | {Schottky gate FETs, e.g. photo MESFETs} [2025-01] |
H10F 30/285 | . . . . | {the devices having PN homojunction gates} [2025-01] |
H10F 30/2857 | . . . . . | {CCDs having PN homojunction gates} [2025-01] |
H10F 30/2863 | . . . . . | {Field-effect phototransistors having PN homojunction gates} [2025-01] |
H10F 30/287 | . . . . | {the devices having PN heterojunction gates} [2025-01] |
H10F 30/2873 | . . . . . | {CCDs having PN heterojunction gates} [2025-01] |
H10F 30/2877 | . . . . . | {Field-effect phototransistors having PN heterojunction gates} [2025-01] |
H10F 30/288 | . . . | {the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices} [2025-01] |
H10F 30/289 | . . . | {the devices being transparent or semi-transparent devices} [2025-01] |
H10F 30/29 | . . | the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation [2025-01] |
H10F 30/292 | . . . | Bulk-effect radiation detectors, e.g. Ge-Li compensated PIN gamma-ray detectors [2025-01] |
H10F 30/2925 | . . . . | {Li-compensated PIN gamma-ray detectors} [2025-01] |
H10F 30/295 | . . . | Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors [2025-01] |
H10F 30/2955 | . . . . | {Shallow PN junction radiation detectors} [2025-01] |
H10F 30/298 | . . . | the devices being characterised by field-effect operation, e.g. MIS type detectors [2025-01] |
H10F 30/301 | . | {the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation} [2025-01] |
| H10F 39/00 | Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F 30/00, e.g. radiation detectors comprising photodiode arrays [2025-01] WARNING
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H10F 39/011 | . | {Manufacture or treatment of image sensors covered by group H10F 39/12} [2025-01] |
H10F 39/014 | . . | {of CMOS image sensors} [2025-01] |
H10F 39/016 | . . | {of thin-film-based image sensors} [2025-01] |
H10F 39/018 | . . | {of hybrid image sensors} [2025-01] |
H10F 39/021 | . . | {of image sensors having active layers comprising only Group III-V materials, e.g. GaAs, AlGaAs or InP} [2025-01] |
H10F 39/022 | . . | {of image sensors having active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe} [2025-01] |
H10F 39/024 | . . | {of coatings or optical elements} [2025-01] |
H10F 39/026 | . . | {Wafer-level processing} [2025-01] |
H10F 39/028 | . . | {performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation} [2025-01] |
H10F 39/10 | . | Integrated devices [2025-01] |
H10F 39/103 | . . | {the at least one element covered by H10F 30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors} [2025-01] |
H10F 39/107 | . . | {having multiple elements covered by H10F 30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays} [2025-01] |
H10F 39/12 | . . | Image sensors [2025-01] |
H10F 39/15 | . . . | Charge-coupled device [CCD] image sensors [2025-01] |
H10F 39/151 | . . . . | {Geometry or disposition of pixel elements, address lines or gate electrodes} [2025-01] |
H10F 39/1515 | . . . . . | {Optical shielding} [2025-01] |
H10F 39/152 | . . . . | {One-dimensional array CCD image sensors} [2025-01] |
H10F 39/153 | . . . . | {Two-dimensional or three-dimensional array CCD image sensors} [2025-01] |
H10F 39/1532 | . . . . . | {Frame-interline transfer} [2025-01] |
H10F 39/1534 | . . . . . | {Interline transfer} [2025-01] |
H10F 39/1536 | . . . . . | {Frame transfer} [2025-01] |
H10F 39/1538 | . . . . . | {Time-delay and integration} [2025-01] |
H10F 39/154 | . . . . | {Charge-injection device [CID] image sensors (H10F 39/156, H10F 39/157 take precedence)} [2025-01] |
H10F 39/156 | . . . . | {CCD or CID colour image sensors} [2025-01] |
H10F 39/157 | . . . . | {CCD or CID infrared image sensors} [2025-01] |
H10F 39/1575 | . . . . . | {of the hybrid type} [2025-01] |
H10F 39/158 | . . . . | {having arrangements for blooming suppression} [2025-01] |
H10F 39/159 | . . . . | {comprising a photoconductive layer deposited on the CCD structure} [2025-01] |
H10F 39/18 | . . . | Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors [2025-01] |
H10F 39/182 | . . . . | {Colour image sensors} [2025-01] |
H10F 39/1825 | . . . . . | {Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures} [2025-01] |
H10F 39/184 | . . . . | {Infrared image sensors} [2025-01] |
H10F 39/1843 | . . . . . | {of the hybrid type} [2025-01] |
H10F 39/1847 | . . . . . | {Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures} [2025-01] |
H10F 39/186 | . . . . | {having arrangements for blooming suppression} [2025-01] |
H10F 39/1865 | . . . . . | {Overflow drain structures} [2025-01] |
H10F 39/189 | . . . . | {X-ray, gamma-ray or corpuscular radiation imagers} [2025-01] |
H10F 39/1892 | . . . . . | {Direct radiation image sensors} [2025-01] |
H10F 39/1895 | . . . . . | {of the hybrid type} [2025-01] |
H10F 39/1898 | . . . . . | {Indirect radiation image sensors, e.g. using luminescent members} [2025-01] |
H10F 39/191 | . . . | {Photoconductor image sensors} [2025-01] |
H10F 39/192 | . . . . | {Colour image sensors} [2025-01] |
H10F 39/193 | . . . . | {Infrared image sensors} [2025-01] |
H10F 39/1935 | . . . . . | {of the hybrid type} [2025-01] |
H10F 39/194 | . . . . | {having arrangements for blooming suppression} [2025-01] |
H10F 39/1945 | . . . . . | {Overflow drain structures} [2025-01] |
H10F 39/195 | . . . . | {X-ray, gamma-ray or corpuscular radiation imagers} [2025-01] |
H10F 39/196 | . . . | {Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors} [2025-01] |
H10F 39/197 | . . . | {Bipolar transistor image sensors} [2025-01] |
H10F 39/198 | . . . | {Contact-type image sensors [CIS]} [2025-01] |
H10F 39/199 | . . . | {Back-illuminated image sensors} [2025-01] |
| H10F 39/80 | . | {Constructional details of image sensors} [2025-01] WARNING
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| H10F 39/802 | . . | {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} [2025-01] WARNING
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H10F 39/8023 | . . . | {Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery} [2025-01] |
H10F 39/8027 | . . . | {Geometry of the photosensitive area} [2025-01] |
| H10F 39/803 | . . | {Pixels having integrated switching, control, storage or amplification elements} [2025-01] WARNING
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H10F 39/8033 | . . . | {Photosensitive area} [2025-01] |
H10F 39/8037 | . . . | {the integrated elements comprising a transistor} [2025-01] |
H10F 39/80373 | . . . . | {characterised by the gate of the transistor} [2025-01] |
H10F 39/80377 | . . . . | {characterised by the channel of the transistor, e.g. channel having a doping gradient} [2025-01] |
| H10F 39/804 | . . | {Containers or encapsulations} [2025-01] WARNING
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| H10F 39/805 | . . | {Coatings} [2025-01] WARNING
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H10F 39/8053 | . . . | {Colour filters} [2025-01] |
H10F 39/8057 | . . . | {Optical shielding} [2025-01] |
| H10F 39/806 | . . | {Optical elements or arrangements associated with the image sensors} [2025-01] WARNING
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H10F 39/8063 | . . . | {Microlenses} [2025-01] |
H10F 39/8067 | . . . | {Reflectors} [2025-01] |
| H10F 39/807 | . . | {Pixel isolation structures} [2025-01] WARNING
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| H10F 39/809 | . . | {of hybrid image sensors} [2025-01] WARNING
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| H10F 39/811 | . . | {Interconnections} [2025-01] WARNING
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| H10F 39/812 | . . | {Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region} [2025-01] WARNING
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| H10F 39/813 | . . | {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels} [2025-01] WARNING
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H10F 39/90 | . | Assemblies of multiple devices [2025-01] |
H10F 39/95 | . . | comprising at least one integrated device covered by group H10F 39/10, e.g. comprising integrated image sensors [2025-01] |
Other devices [2025-01] |
H10F 55/00 | Radiation-sensitive semiconductor devices covered by groups H10F 10/00, H10F 19/00 or H10F 30/00 being structurally associated with electric light sources and electrically or optically coupled thereto [2025-01] |
H10F 55/10 | . | wherein the radiation-sensitive semiconductor devices control the electric light source, e.g. image converters, image amplifiers or image storage devices [2025-01] |
H10F 55/15 | . . | wherein the radiation-sensitive devices and the electric light source are all semiconductor devices [2025-01] |
H10F 55/155 | . . . | formed in, or on, a common substrate [2025-01] |
H10F 55/16 | . . | {wherein the radiation-sensitive semiconductor devices have no potential barriers} [2025-01] |
H10F 55/165 | . . . | {wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes} [2025-01] |
H10F 55/17 | . . | {wherein the radiation-sensitive semiconductor devices have potential barriers} [2025-01] |
H10F 55/18 | . | {wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection} [2025-01] |
H10F 55/20 | . | wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers [2025-01] |
H10F 55/205 | . . | {wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors} [2025-01] |
H10F 55/207 | . . . | {wherein the electric light source comprises semiconductor devices having potential barriers, e.g. light emitting diodes} [2025-01] |
H10F 55/208 | . . . | {Optical potentiometers} [2025-01] |
H10F 55/25 | . . | wherein the radiation-sensitive devices and the electric light source are all semiconductor devices [2025-01] |
H10F 55/255 | . . . | formed in, or on, a common substrate [2025-01] |
H10F 55/26 | . . | {wherein the radiation-sensitive semiconductor devices have potential barriers} [2025-01] |
Manufacture or treatment; Constructional details [2025-01] |
| H10F 71/00 | Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F 19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F 19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F 39/00) [2025-01] WARNING
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| H10F 71/10 | . | the devices comprising amorphous semiconductor material [2025-01] WARNING
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| H10F 71/103 | . . | {including only Group IV materials} [2025-01] WARNING
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H10F 71/1035 | . . . | {having multiple Group IV elements, e.g. SiGe or SiC} [2025-01] |
| H10F 71/107 | . . | {Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition} [2025-01] WARNING
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H10F 71/121 | . | {The active layers comprising only Group IV materials} [2025-01] |
H10F 71/1212 | . . | {consisting of germanium} [2025-01] |
H10F 71/1215 | . . | {comprising at least two Group IV elements, e.g. SiGe} [2025-01] |
H10F 71/1218 | . . . | {in microcrystalline form} [2025-01] |
H10F 71/1221 | . . | {comprising polycrystalline silicon} [2025-01] |
H10F 71/1224 | . . | {comprising microcrystalline silicon} [2025-01] |
H10F 71/125 | . | {The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe} [2025-01] |
H10F 71/1253 | . . | {comprising at least three elements, e.g. HgCdTe} [2025-01] |
H10F 71/1257 | . . | {comprising growth substrates not made of Group II-VI materials} [2025-01] |
H10F 71/127 | . | {The active layers comprising only Group III-V materials, e.g. GaAs or InP} [2025-01] |
H10F 71/1272 | . . | {comprising at least three elements, e.g. GaAlAs or InGaAsP} [2025-01] |
H10F 71/1274 | . . . | {comprising nitrides, e.g. InGaN or InGaAlN} [2025-01] |
H10F 71/1276 | . . | {comprising growth substrates not made of Group III-V materials} [2025-01] |
H10F 71/1278 | . . | {comprising nitrides, e.g. GaN} [2025-01] |
| H10F 71/128 | . | {Annealing} [2025-01] WARNING
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| H10F 71/129 | . | {Passivating} [2025-01] WARNING
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| H10F 71/131 | . | {Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors} [2025-01] WARNING
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| H10F 71/132 | . | {Gettering} [2025-01] WARNING
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| H10F 71/133 | . | {Providing edge isolation} [2025-01] WARNING
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| H10F 71/134 | . | {Irradiation with electromagnetic or particle radiation} [2025-01] WARNING
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| H10F 71/135 | . | {Application of a bias; Current injection} [2025-01] WARNING
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| H10F 71/136 | . | {Singulating, e.g. dicing} [2025-01] WARNING
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| H10F 71/137 | . | {Batch treatment of the devices} [2025-01] WARNING
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H10F 71/1375 | . . | {Apparatus for automatic interconnection of photovoltaic cells in a module} [2025-01] |
| H10F 71/138 | . | {Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes} [2025-01] WARNING
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H10F 71/1385 | . . | {Etching transparent electrodes} [2025-01] |
| H10F 71/139 | . | {using temporary substrates} [2025-01] WARNING
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H10F 71/1395 | . . | {for thin-film devices} [2025-01] |
| H10F 77/00 | Constructional details of devices covered by this subclass (constructional details of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F 39/00) [2025-01] NOTE
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H10F 77/10 | . | Semiconductor bodies [2025-01] |
| H10F 77/12 | . . | Active materials [2025-01] NOTE
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H10F 77/121 | . . . | comprising only selenium or only tellurium [2025-01] |
H10F 77/1215 | . . . . | {characterised by the dopants} [2025-01] |
H10F 77/122 | . . . | comprising only Group IV materials [2025-01] |
H10F 77/1223 | . . . . | characterised by the dopants [2025-01] |
H10F 77/1226 | . . . . | comprising multiple Group IV elements, e.g. SiC [2025-01] |
H10F 77/1227 | . . . . . | {characterised by the dopants} [2025-01] |
H10F 77/1228 | . . . . | {porous silicon} [2025-01] |
H10F 77/123 | . . . | comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe [2025-01] |
H10F 77/1233 | . . . . | {characterised by the dopants} [2025-01] |
H10F 77/1237 | . . . . | {having at least three elements, e.g. HgCdTe} [2025-01] |
H10F 77/124 | . . . | comprising only Group III-V materials, e.g. GaAs [2025-01] |
H10F 77/1243 | . . . . | {characterised by the dopants} [2025-01] |
H10F 77/1246 | . . . . | {III-V nitrides, e.g. GaN} [2025-01] |
H10F 77/1248 | . . . . | {having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP} [2025-01] |
H10F 77/12485 | . . . . . | {comprising nitride compounds, e.g. InGaN} [2025-01] |
H10F 77/126 | . . . | {comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]} [2025-01] |
H10F 77/1265 | . . . . | {characterised by the dopants} [2025-01] |
H10F 77/127 | . . . | {comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe} [2025-01] |
H10F 77/1275 | . . . . | {characterised by the dopants} [2025-01] |
H10F 77/128 | . . . | {comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4} [2025-01] |
H10F 77/1285 | . . . . | {characterised by the dopants} [2025-01] |
H10F 77/14 | . . | Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies [2025-01] |
H10F 77/143 | . . . | {comprising quantum structures} [2025-01] |
H10F 77/1433 | . . . . | {Quantum dots} [2025-01] |
H10F 77/1437 | . . . . | {Quantum wires or nanorods} [2025-01] |
H10F 77/146 | . . . | {Superlattices; Multiple quantum well structures} [2025-01] |
H10F 77/1462 | . . . . | {comprising amorphous semiconductor layers} [2025-01] |
H10F 77/1465 | . . . . | {including only Group IV materials, e.g. Si-SiGe superlattices} [2025-01] |
H10F 77/1468 | . . . . | {Doped superlattices, e.g. N-I-P-I superlattices} [2025-01] |
H10F 77/147 | . . . | {Shapes of bodies} [2025-01] |
H10F 77/148 | . . . | {Shapes of potential barriers} [2025-01] |
H10F 77/16 | . . | Material structures, e.g. crystalline structures, film structures or crystal plane orientations [2025-01] |
H10F 77/162 | . . . | Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials (H10F 77/169 takes precedence) [2025-01] |
H10F 77/1625 | . . . . | {Semiconductor nanoparticles embedded in semiconductor matrix} [2025-01] |
H10F 77/164 | . . . . | Polycrystalline semiconductors [2025-01] |
H10F 77/1642 | . . . . . | {including only Group IV materials} [2025-01] |
H10F 77/1645 | . . . . . . | {including microcrystalline silicon} [2025-01] |
H10F 77/1648 | . . . . . . | {including microcrystalline Group IV-IV materials, e.g. microcrystalline SiGe} [2025-01] |
H10F 77/166 | . . . . | Amorphous semiconductors [2025-01] |
H10F 77/1662 | . . . . . | {including only Group IV materials} [2025-01] |
H10F 77/1665 | . . . . . . | {including Group IV-IV materials, e.g. SiGe or SiC} [2025-01] |
H10F 77/1668 | . . . . . . | {presenting light-induced characteristic variations, e.g. Staebler-Wronski effect} [2025-01] |
H10F 77/169 | . . . | Thin semiconductor films on metallic or insulating substrates [2025-01] |
H10F 77/1692 | . . . . | {the films including only Group IV materials} [2025-01] |
H10F 77/1694 | . . . . | {the films including Group I-III-VI materials, e.g. CIS or CIGS} [2025-01] |
H10F 77/1696 | . . . . | {the films including Group II-VI materials, e.g. CdTe or CdS} [2025-01] |
H10F 77/1698 | . . . . | {the metallic or insulating substrates being flexible} [2025-01] |
H10F 77/1699 | . . . . . | {the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils} [2025-01] |
H10F 77/20 | . | Electrodes [2025-01] |
H10F 77/206 | . . | {for devices having potential barriers} [2025-01] |
H10F 77/211 | . . . | {for photovoltaic cells} [2025-01] |
H10F 77/215 | . . . . | {Geometries of grid contacts} [2025-01] |
H10F 77/219 | . . . . | {Arrangements for electrodes of back-contact photovoltaic cells} [2025-01] |
H10F 77/223 | . . . . . | {for metallisation wrap-through [MWT] photovoltaic cells} [2025-01] |
H10F 77/227 | . . . . . | {for emitter wrap-through [EWT] photovoltaic cells, e.g. interdigitated emitter-base back-contacts} [2025-01] |
H10F 77/241 | . . . | {comprising ring electrodes} [2025-01] |
H10F 77/244 | . . | {made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers} [2025-01] |
H10F 77/247 | . . . | {comprising indium tin oxide [ITO]} [2025-01] |
H10F 77/251 | . . . | {comprising zinc oxide [ZnO]} [2025-01] |
H10F 77/254 | . . . | {comprising a metal, e.g. transparent gold} [2025-01] |
H10F 77/30 | . | Coatings (arrangements for preventing damage to photovoltaic cells caused by corpuscular radiation H10F 77/80) [2025-01] |
H10F 77/306 | . . | {for devices having potential barriers} [2025-01] |
H10F 77/311 | . . . | {for photovoltaic cells} [2025-01] |
H10F 77/315 | . . . . | {the coatings being antireflective or having enhancing optical properties} [2025-01] |
H10F 77/331 | . . . | {for filtering or shielding light, e.g. multicolour filters for photodetectors} [2025-01] |
H10F 77/334 | . . . . | {for shielding light, e.g. light blocking layers or cold shields for infrared detectors} [2025-01] |
H10F 77/337 | . . . . | {using interference filters, e.g. multilayer dielectric filters} [2025-01] |
H10F 77/40 | . |
H10F 77/407 | . . | {indirectly associated with the devices} [2025-01] |
H10F 77/413 | . . | {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F 77/42)} [2025-01] |
H10F 77/42 | . . | directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means [2025-01] |
H10F 77/45 | . . . | Wavelength conversion means, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements [2025-01] |
H10F 77/48 | . . . | Back surface reflectors [BSR] [2025-01] |
H10F 77/484 | . . . | {Refractive light-concentrating means, e.g. lenses} [2025-01] |
H10F 77/488 | . . . | {Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection} [2025-01] |
H10F 77/492 | . . . | {Spectrum-splitting means, e.g. dichroic mirrors} [2025-01] |
H10F 77/496 | . . | {Luminescent members, e.g. fluorescent sheets (wavelength conversion means for photovoltaic cells H10F 77/45)} [2025-01] |
H10F 77/50 | . |
H10F 77/60 | . | Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations [2025-01] |
H10F 77/63 | . . | Arrangements for cooling directly associated or integrated with photovoltaic cells, e.g. heat sinks directly associated with the photovoltaic cells or integrated Peltier elements for active cooling [2025-01] |
H10F 77/67 | . . . | including means to utilise heat energy directly associated with the photovoltaic cells, e.g. integrated Seebeck elements [2025-01] |
H10F 77/68 | . . . | {using gaseous or liquid coolants, e.g. air flow ventilation or water circulation} [2025-01] |
H10F 77/70 | . | Surface textures, e.g. pyramid structures [2025-01] |
H10F 77/703 | . . | {of the semiconductor bodies, e.g. textured active layers} [2025-01] |
H10F 77/707 | . . | {of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate} [2025-01] |
H10F 77/80 | . | Arrangements for preventing damage to photovoltaic cells caused by corpuscular radiation, e.g. for space applications [2025-01] |
H10F 77/90 | . | Energy storage means directly associated or integrated with photovoltaic cells, e.g. capacitors integrated with photovoltaic cells [2025-01] |
H10F 77/93 | . | {Interconnections} [2025-01] |
H10F 77/933 | . . | {for devices having potential barriers} [2025-01] |
H10F 77/935 | . . . | {for photovoltaic devices or modules} [2025-01] |
H10F 77/937 | . . . . | {Busbar structures for modules} [2025-01] |
H10F 77/939 | . . . . | {Output lead wires or elements} [2025-01] |
H10F 77/95 | . | {Circuit arrangements} [2025-01] |
H10F 77/953 | . . | {for devices having potential barriers} [2025-01] |
H10F 77/955 | . . . | {for photovoltaic devices} [2025-01] |
H10F 77/957 | . . . | {for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes} [2025-01] |
H10F 77/959 | . . . | {for devices working in avalanche mode} [2025-01] |
| H10F 99/00 | Subject matter not provided for in other groups of this subclass [2025-01] WARNING
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