CPC Definition - Subclass H10H
This place covers:
Inorganic semiconductor devices having potential barriers which emit light when current is passed through them.
This includes the following kinds of devices:
- light-emitting diodes [LED]; and
- superluminescent diodes [SLD].
In this subclass, the light-emitting semiconductor devices may emit visible, infrared [IR] or ultraviolet [UV] light.
This place also covers processes and apparatus specially adapted for the manufacture or treatment of such devices.
In this subclass, the periodic system used is the I to VIII group system indicated in the Periodic Table under Note (3) of section C.
This place does not cover:
Semiconductor lasers |
Attention is drawn to the following places, which may be of interest for search:
Electroluminescent light sources per se | |
Circuit arrangements for operating LEDs | |
Light-emitting devices with organic active regions, e.g. OLEDs |
In this place, the following terms or expressions are used with the meaning indicated:
bipolar | refers to semiconductor technology that involves multi-carrier-type operation, i.e. which simultaneously uses both electrons and holes as charge carriers |
body | the region of semiconductor (resp. solid-state) material(s) within which, or at the surface of which, the physical effects that are characteristic of the device occur, and any bordering semiconductor (resp. solid-state) material(s) that are contiguous with this region. Examples: in a field-effect transistor [FET], the physical effects occur in the channel region between the source and the drain. The semiconductor body includes the channel region, the source and drain regions, and any contiguous semiconductor material; in a light-emitting diode [LED], the physical effects occur at a junction of active semiconductor layers. The semiconductor body includes these active semiconductor layers and any contiguous semiconductor layers, such as buffer layers, possibly a growth substrate, etc., that are between the cathode and anode electrodes; in a thermoelectric device, the solid-state body includes all solid-state materials in the path of current between the electrodes. |
chip | a piece of a wafer or a substrate that has been processed to contain devices therein or thereon. The expression "diced chip" refers to the result of dicing a wafer or a substrate into a plurality of chips, whereas "undiced chip" refers to a chip before dicing or with no dicing. |
component | an electric circuit element (e.g. diode, transistor, LED, etc.) that is one of a plurality of elements formed in or on a common substrate, e.g. in an integrated device |
container | a solid construction in which (one or more) devices are placed, or which is formed around the devices, for forming packaged devices. A container requires a partial or total enclosure and it may also comprise a filling. |
device | an electric circuit element (e.g. diode, transistor, LED, etc.); (depending on the context) can also refer to an integrated device (e.g. CMOS-IC, DRAM device, etc.). A device may be in the form of a bare or packaged chip. |
dopant | the atoms or compounds added to a material during doping |
doping | the intentional addition of a small quantity of atoms or compounds into a material to achieve a desired characteristic, e.g. to produce an n-type or p-type material |
electrode | a conductive region in or on the semiconductor body or solid-state body of a device (and other than the body itself) which exerts an electrical influence on the body, irrespective of whether or not an external electrical connection is made thereto. The term covers metallic regions which exert electrical influence on the body through an insulating region (e.g. in intentional non-parasitic capacitive coupling), or inductive coupling arrangements. In a capacitive coupling arrangement, the dielectric region is regarded as part of the electrode. The overall conductive wiring may comprise multiple portions. In such a case, only the wiring portions that exert an electrical influence on the body are considered portions of the electrode. Examples: conductive layer(s) in direct physical contact with the body; conductive region(s) exerting an inductive coupling onto the body; a multilayer structure which exerts influence on the body through an insulating region, e.g. in intentional non-parasitic capacitive coupling. |
encapsulation | an enclosure consisting of (one or more) layers, e.g. comprising organic polymers, which at least partially enclose the (one or more) devices, thereby protecting them. An encapsulation is often used to hermetically seal devices. |
FET | field-effect transistor |
field-effect | refers to semiconductor technology wherein a voltage applied to a gate electrode creates an electric field that allows for control of current near the interface of the gate and the body, e.g. to create an inversion channel between the source and drain of a MOSFET |
individual | refers to: an electric circuit element not being an integrated device; or a component of an integrated device. Examples of individual devices include: diodes, transistors, photovoltaic cells, Josephson-junction devices, light-emitting diodes [LED], organic LEDs, or a single LED component within an integrated device. |
integrated circuit | an integrated device where all the electric circuit elements (e.g. diodes, transistors, LEDs, etc.) are formed in or on a common substrate, including interconnections between the elements |
integrated device | a device consisting of a plurality of semiconductor or other solid-state electric circuit elements formed in or on a common substrate |
interconnection | a conductive arrangement for conducting electric current from an electrode of a circuit element to another part of the circuit. Examples include metal wirings. |
MIS | metal-insulator-semiconductor |
MISFET | metal-insulator-semiconductor field-effect transistor |
MOS | metal-oxide-semiconductor |
package | the collection of all elements, which are external to the chip, that protect the chip or connect it to another object. Package, therefore, covers encapsulations, containers, package substrates, interposers, heatsinks or the like. Package does not include objects at a higher system level, like circuit boards and beyond, e.g. a housing in which the circuit board is enclosed. |
TFT | thin-film transistor |
unipolar | refers to semiconductor technology that primarily involves one type only of charge carrier, i.e. it involves either holes or electrons but not both |
wafer | It can be one of the following: (a) a slice of semiconductor or electric solid-state active material. For example: a slice of silicon; a slice of a semiconducting compound, e.g. gallium nitride [GaN]; a slice of lithium tantalate [LiTaO3] for superconductor applications. (b) a multilayered laminate, having at least one layer of semiconductor or electric solid-state active material, the layer being meant to be processed into devices. For example: silicon-on-insulator [SOI]; silicon-on-glass [SOG]; silicon-on-sapphire [SOS]; a composite wafer comprising silicon carbide [SiC] on polycrystalline silicon [Si] support; a layer of semiconducting nanowires on glass. A wafer is typically processed by (e.g.) deposition, etching, doping or diffusion, and is then typically diced into chips. |
This place covers:
Processes and apparatus specially adapted for the manufacture or treatment of individual light-emitting semiconductor devices covered by main group H10H 20/00.
This place covers:
Constructional details of individual light-emitting semiconductor devices covered by main group H10H 20/00. Classification is made in this group if the invention lies in the details of the constructional parts per se, e.g. electrodes, bodies, coatings, etc.
Group H10H 20/80 covers constructional details for individual light-emitting devices. When the constructional detail is relevant to integrated devices or assemblies comprising multiple devices, then classification is made in group H10H 29/80.
This place covers:
Semiconductor bodies characterised by aspects including:
- the nature of the material (e.g. specific composition, special doping species, crystal structure or orientation); or
- the shape or geometry of the bodies.
This place covers:
- Semiconductor bodies having quantum effect structures, e.g. tunnelling barriers or quantum wells;
- Semiconductor bodies having superlattices, e.g. delta-doped superlattices.
This place covers:
Semiconductor bodies having two or more light-emitting regions wherein the light-emitting regions are not individually addressable.
Examples include semiconductor bodies having:
- discontinuous light-emitting layers;
- plural light-emitting layers between a single pair of electrodes.
This place covers:
Semiconductor bodies having regions, structures or layers that modify the carrier path, or impede or enhance carrier mobility, e.g. carrier transport, blocking or injection layers.
This place covers:
Semiconductor bodies characterised by the shape of their semiconductor bodies, e.g. curved or truncated semiconductor substrates, periodic interfaces or nanostructures.
This place covers:
Electrodes characterised by their shape. This characterisation may relate to the shape of an individual electrode or the relative shapes of the anode and cathode electrodes.
Group H10H 20/85 covers packaging elements for individual emitting devices. When the packaging element is relevant to integrated devices or assemblies of multiple devices, then classification is made in group H10H 29/85.
This place covers:
Elements formed in light-emitting device packages, meant for converting a wavelength emitted by the devices into a different wavelength. The elements may comprise a matrix material, e.g. a binder material, into which wavelength conversion materials, e.g. phosphorescent or fluorescent materials, are dispersed.
Attention is drawn to the following places, which may be of interest for search:
Luminescent materials per se |
Attention is drawn to the following places, which may be of interest for search:
Compositions of organic macromolecular compounds |
This place covers:
Elements formed in light-emitting device packages that are specially adapted for altering the shape of the optical field of the light emitted from the light emitting device.
Examples include lenses, refractors, diffraction gratings, matrix including scattering particles.
Attention is drawn to the following places, which may be of interest for search:
Light sources using semiconductor devices as light-generating elements | |
Lens shaped refractors for light sources | |
Optical elements, systems or apparatus | |
Arrangements for extracting light from organic light-emitting devices | |
Arrangements for improving contrast in organic light-emitting devices |
Attention is drawn to the following places, which may be of interest for search:
Reflective means for organic light-emitting devices |
Attention is drawn to the following places, which may be of interest for search:
Interconnections generically applicable to semiconductor devices | |
Lead-frames generically applicable to semiconductor devices |
Attention is drawn to the following places, which may be of interest for search:
Means for heat extraction or cooling generically applicable to semiconductor devices |
This place does not cover:
Active-matrix LED displays |
This place does not cover:
Active-matrix LED displays |
This place covers:
LED displays wherein the LEDs are arranged into subpixels of different colours (i.e. full-colour LED displays) or into pixels of the same colour (i.e. monochromatic LED displays) and the pixels or subpixels are individually driven by the active-matrix circuitry.
For classification of active-matrix LED displays here, the emphasis of the invention must concern the LEDs, the layers closely related to the LEDs or constructional details closely related to the LEDs, e.g. interconnections between the LEDs or their encapsulations.
Attention is drawn to the following places, which may be of interest for search:
Control arrangements or circuits for semiconductor display panels, e.g. using light emitting diodes [LED] | |
Active-matrix OLED displays |
In this place, the following terms or expressions are used with the meaning indicated:
pixel | unit of a display device, the unit often having an arrangement of subpixels, e.g. an RGB pixel comprising red (R), blue (B) and green (G) subpixels, and the unit typically repeating across the display |
subpixel | portion of a pixel capable of emitting light of a particular colour, typically red (R), blue (B) or green (G), and separately addressable from the other subpixels of the pixel. The subpixel includes one or more light-emitting elements, each being connected to addressing circuitry, e.g. a driving transistor. |
This place covers:
The layer or layers of an active-matrix display that define the region in which the light-emitting devices are disposed and physically separates the light-emitting devices in one subpixel from the light-emitting devices in other subpixels, or the light-emitting devices in one pixel from the light-emitting devices in other pixels.
Interconnection structure of active-matrix LED displays is generally covered in group H10H 29/49 whereas interconnections of these displays as they relate to control is covered in group G09G 3/32. Specifically, group G09G 3/32 covers:
- arrangements or circuits for processing control signals to achieve the display image;
- solutions of problems of displays by means of their control; and
- improvements of the control of displays.