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CPC
COOPERATIVE PATENT CLASSIFICATION
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B81C
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J 13/02; processes or apparatus peculiar to the manufacture or treatment of piezo-electric, electrostrictive or magnetostrictive element per se H01L 41/22)
NOTE
-
This subclass does not cover:
- processes or apparatus for the manufacture or treatment of purely electrical or electronic devices, which are covered by section H, e.g. group H01L 21/00; - processes or apparatus involving the manipulation of single atoms or molecules, which are covered by group B82B 3/00.


In this subclass, local "residual" subgroups, e.g. B81C 1/00126, are used with the following purpose.
When classifying a document which does not fit in any of a set of subgroups with the same dot-level, the document should be classified in the residual group, if present, and not in the group at the hierarchical level one dot above.
In the example, the document shall be classified in B81C 1/00126 and not in B81C 1/00023 as B81C 1/00126 is "residual" to B81C 1/00031-B81C 1/00119

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B81C 1/00
Manufacture or treatment of devices or systems in or on a substrate (B81C 3/00 takes precedence)
B81C 1/00007
.
{
Assembling automatically hinged components, i.e. self-assembly processes (self-assembly mechanisms B81B 7/0003)
}
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B81C 1/00015
.
{
for manufacturing micro-systems
}
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B81C 1/00023
. .
{
without movable or flexible elements (array of static structures for functionalising surfaces in B81C 1/00206; manufacture of MEMS devices for specific applications, see relevant places, e.g. microreactors B01J 19/0093, lab-on-chip B01L 3/5027, micromixers B01F 13/0059)
}
B81C 1/00031
. . .
{
Regular or irregular arrays of nanoscale structures, e.g. etch mask layer (photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F 7/00; lithographic processes for making patterned surfaces using printing and stamping G03F 7/0002)
}
B81C 1/00039
. . .
{
Anchors
}
B81C 1/00047
. . .
{
Cavities
}
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B81C 1/00055
. . .
{
Grooves
}
B81C 1/00063
. . . .
{
Trenches
}
B81C 1/00071
. . . .
{
Channels
}
B81C 1/00079
. . . .
{
Grooves not provided for in groups B81C 1/00063 to B81C 1/00071
}
B81C 1/00087
. . .
{
Holes
}
B81C 1/00095
. . .
{
Interconnects
}
B81C 1/00103
. . .
{
Structures having a predefined profile, e.g. sloped or rounded grooves
}
B81C 1/00111
. . .
{
Tips, pillars, i.e. raised structures (microneedles A61M 37/0015)
}
B81C 1/00119
. . .
{
Arrangement of basic structures like cavities or channels, e.g. suitable for microfluidic systems
}
B81C 1/00126
. . .
{
Static structures not provided for in groups B81C 1/00031 to B81C 1/00119
}
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B81C 1/00134
. .
{
comprising flexible or deformable structures (manufacture of MEMS devices for specific applications, see relevant places, e.g. gyroscopes G01C19/56G1, pressure sensors G01L 9/0042, accelerometers G01P 15/0802, acoustic transducers or diaphragms therefor H04R31)
}
B81C 1/00142
. . .
[Bridges (deformable micro-mirrors G02B 26/0841)]
B81C 1/0015
. . .
[Cantilevers (switches using MEMS H01H 1/0036; electrostatic relays using micromechanics H01H 59/0009; micro-electro-mechanical resonators H03H 9/02244)]
B81C 1/00158
. . .
[Diaphragms, membranes (manufacture process for semi-permeable inorganic membranes B01D 67/0039)]
B81C 1/00166
. . .
{
Electrodes
}
B81C 1/00174
. . .
{
See-saws
}
B81C 1/00182
. . .
{
Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
}
B81C 1/0019
. . .
{
Flexible or deformable structures not provided for in groups B81C 1/00142 to B81C 1/00182
}
B81C 1/00198
. .
{
comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
}
B81C 1/00206
. .
{
Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
}
B81C 1/00214
. .
{
Processes for the simultaneaous manufacturing of a network or an array of similar micro-structural devices
}
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B81C 1/00222
. .
{
Integrating an electronic processing unit with a micromechanical structure
}
B81C 1/0023
. . .
{
Packaging together an electronic processing unit die and a micromechanical structure die (MEMS packages B81B 7/0032; MEMS packaging processes B81C 1/00261)
}
B81C 1/00238
. . .
{
Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
}
B81C 1/00246
. . .
{
Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
}
B81C 1/00253
. . .
{
Processes for integrating an electronic processing unit with a micromechanical structure not provided for in B81C 1/0023 to B81C 1/00246
}
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B81C 1/00261
. .
{
Processes for packaging MEMS devices (MEMS packages B81B 7/00P, packaging of smart-MEMS B81C 1/0023)
}
B81C 1/00269
. . .
{
Bonding of solid lids or wafers to the substrate
}
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B81C 1/00277
. . .
{
for maintaining a controlled atmosphere inside of the cavity containing the MEMS
}
B81C 1/00285
. . . .
{
using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
}
B81C 1/00293
. . . .
{
maintaining a controlled atmosphere with processes not provided for in B81C 1/00285
}
B81C 1/00301
. . .
{
Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
}
B81C 1/00309
. . .
{
suitable for fluid transfer from the MEMS out of the package or vice-versa, e.g. transfer of liquid, gas, sound
}
B81C 1/00317
. . .
{
Packaging optical devices
}
B81C 1/00325
. . .
{
for reducing stress inside of the package structure
}
B81C 1/00333
. . .
{
Aspects relating to packaging of MEMS devices, not covered by groups B81C 1/00269 to B81C 1/00325
}
B81C 1/00341
. .
{
Processes for manufacturing micro-systems not provided for in groups B81C 1/00023 to B81C 1/00261
}
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B81C 1/00349
.
{
Creating layers of material on a substrate
}
B81C 1/00357
. .
{
involving bonding one or several substrates on a non-temporary support, e.g. another substrate
}
B81C 1/00365
. .
{
having low tensile stress between layers
}
B81C 1/00373
. .
{
Selective deposition, e.g. printing or micro-contact printing
}
B81C 1/0038
. .
{
Processes for creating layers of materials not provided for in groups B81C 1/00357 to B81C 1/00373
}
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B81C 1/00388
.
{
Etch mask forming
}
B81C 1/00396
. .
{
Mask characterised by its composition, e.g. multilayer masks
}
B81C 1/00404
. .
{
Mask characterised by its size, orientation or shape
}
B81C 1/00412
. .
{
Mask characterised by its behaviour during the etching process, e.g. soluble masks
}
B81C 1/0042
. .
{
Compensation masks in orientation dependent etching
}
B81C 1/00428
. .
{
Etch mask forming processes not provided for in groups B81C 1/00396 to B81C 1/0042
}
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B81C 1/00436
.
{
Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
}
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B81C 1/00444
. .
{
Surface micromachining, i.e. structuring layers on the substrate
}
B81C 1/0046
. . .
{
using stamping, e.g. imprinting (nano-imprinting for making etch masks G03F 7/0002)
}
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B81C 1/00468
. . .
{
Releasing structures
}
B81C 1/00476
. . . .
{
removing a sacrificial layer (B81C 1/00912 takes precedence)
}
B81C 1/00484
. . . .
{
Processes for releasing structures not provided for in group B81C 1/00476
}
B81C 1/00492
. . .
{
Processes for surface micromachining not provided for in groups B81C 1/00055 to B81C 1/00484
}
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B81C 1/005
. .
{
Bulk micromachining
}
B81C 1/00507
. . .
{
Formation of buried layers by techniques other than deposition, e.g. by deep implantation of elements (SIMOX techniques H01L 21/762 )
}
B81C 1/00515
. . .
{
Bulk micromachining techniques not provided for in B81C 1/00507
}
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B81C 1/00523
. .
{
Etching material
}
B81C 1/00531
. . .
{
Dry etching
}
B81C 1/00539
. . .
{
Wet etching
}
B81C 1/00547
. . .
{
Etching processes not provided for in groups B81C 1/00531 to B81C1/00F6P
}
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B81C 1/00555
. .
{
Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity (B81C 1/00023 to B81C 1/0019 take precedence)
}
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B81C 1/00563
. . .
{
Avoid or control over-etching
}
B81C 1/00571
. . . .
{
Avoid or control under-cutting
}
B81C 1/00579
. . . .
{
Avoid charge built-up
}
B81C 1/00587
. . . .
{
Processes for avoiding or controlling over-etching not provided for in B81C 1/00571 to B81C 1/00579
}
B81C 1/00595
. . .
{
Control etch selectivity
}
B81C 1/00603
. . .
{
Aligning features and geometries on both sides of a substrate, e.g. when double side etching
}
B81C 1/00611
. . .
{
Processes for the planarisation of structures (planarising depositions C23C, H01L)
}
B81C 1/00619
. . .
{
Forming high aspect ratio structures having deep steep walls
}
B81C 1/00626
. . .
{
Processes for achieving a desired geometry not provided for in groups B81C 1/00563 to B81C 1/00619
}
B81C 1/00634
. .
{
Processes for shaping materials not provided for in groups B81C 1/00444 to B81C 1/00626
}
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B81C 1/00642
.
{
for improving the physical properties of a device
}
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B81C 1/0065
. .
{
Mechanical properties
}
B81C 1/00658
. . .
{
Treatments for improving the stiffness of a vibrating element
}
B81C 1/00666
. . .
{
Treatments for controlling internal stress or strain in MEMS structures
}
B81C 1/00674
. . .
{
Treatments for improving wear resistance
}
B81C 1/00682
. . .
{
Treatments for improving mechanical properties, not provided for in B81C 1/00658 to B81C 1/0065
}
B81C 1/0069
. .
{
Thermal properties, e.g. improve thermal insulation
}
B81C 1/00698
. .
{
Electrical characteristics, e.g. by doping materials
}
B81C 1/00706
. .
{
Magnetic properties
}
B81C 1/00714
. .
{
Treatment for improving the physical properties not provided for in groups B81C 1/0065 to B81C 1/00706
}
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B81C 1/00777
.
{
Preserve existing structures from alteration, e.g. temporary protection during manufacturing
}
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B81C 1/00785
. .
{
Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching (B81C 1/00563 to B81C 1/00595 take precedence)
}
B81C 1/00793
. . .
{
Avoid contamination, e.g. absorption of impurities or oxidation
}
B81C 1/00801
. . .
{
Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer (B81C 1/00595, B81C 1/00468 take precedence)
}
B81C 1/00809
. . .
{
Methods to avoid chemical alteration not provided for in groups B81C 1/00793 to B81C 1/00801
}
B81C 1/00817
. .
{
Avoid thermal destruction
}
B81C 1/00825
. .
{
Protect against mechanical threats, e.g. against shocks, or residues (B81C 1/00261 take precedence)
}
B81C 1/00833
. .
{
Methods for preserving structures not provided for in groups B81C 1/00785 to B81C 1/00825
}
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B81C 1/00841
.
{
Cleaning during or after manufacture (cleaning of semiconductor devices H01L 21/306)
}
B81C 1/00849
. .
{
during manufacture
}
B81C 1/00857
. .
{
after manufacture, e.g. back-end of the line process
}
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B81C 1/00865
.
{
Multistep processes for the separation of wafers into individual elements
}
B81C 1/00873
. .
{
characterised by special arrangements of the devices, allowing an easier separation
}
B81C 1/0088
. .
{
Separation allowing recovery of the substrate or a part of the substrate, e.g. epitaxial lift-off
}
B81C 1/00888
. .
{
Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving
}
B81C 1/00896
. .
{
Temporary protection during separation into individual elements
}
B81C 1/00904
. .
{
Multistep processes for the separation of wafers into individual elements not provided for in groups B81C 1/00873 to B81C 1/00896
}
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B81C 1/00912
.
{
Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
}
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B81C 1/0092
. .
{
For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
}
B81C 1/00928
. . .
{
Eliminating or avoiding remaining moisture after the wet etch release of the movable structure
}
B81C 1/00936
. . .
{
Releasing the movable structure without liquid etchant
}
B81C 1/00944
. . .
{
Maintaining a critical distance between the structures to be released
}
B81C 1/00952
. . .
{
Treatments or methods for avoiding stiction during the manufacturing process not provided for in groups B81C 1/00928 to B81C 1/00944
}
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B81C 1/0096
. .
{
For avoiding stiction when the device is in use, i.e. after manufacture has been completed
}
B81C 1/00968
. . .
{
Methods for breaking the stiction bond
}
B81C 1/00976
. . .
{
Control methods for avoiding stiction, e.g. controlling the bias voltage
}
B81C 1/00984
. . .
{
Methods for avoiding stiction when the device is in use not provided for in groups B81C 1/00968 to B81C 1/00976
}
B81C 1/00992
. .
{
Treatments or methods for avoiding stiction of flexible or moving parts of MEMS not provided for in groups B81C 1/0092 to B81C 1/00984
}
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B81C 3/00
Assembling of devices or systems from individually processed components
B81C 3/001
.
{
Bonding of two components
}
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B81C 3/002
.
{
Aligning micro-parts
}
B81C 3/004
. .
{
Active alignment, i.e. moving the elements in response to the detected position of the elements using internal or external actuators
}
B81C 3/005
. .
{
Passive alignment, i.e. without a detection of the position of the elements or using only structural arrangements or thermodynamic forces
}
B81C 3/007
. .
{
Methods for aligning micro-parts not provided for in groups B81C 3/004 to B81C 3/005
}
B81C 3/008
.
{
Aspects related to assembling from individually processed components, not covered by groups B81C 3/001 to B81C 3/002
}
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B81C 99/00
Subject matter not provided for in other groups of this subclass
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B81C 99/0005
.
{
Apparatus specially adapted for the manufacture or treatment of micro-structural devices or systems, or methods for manufacturing the same
}
B81C 99/001
. .
{
for cutting, cleaving or grinding
}
B81C 99/0015
. .
{
for micro extrusion (extrusion heads in general B29C 47/12)
}
B81C 99/002
. .
{
Apparatus for assembling MEMS, e.g. micro-manipulators (micro-manipulators per se B25J 7/00)
}
B81C 99/0025
. .
{
Apparatus specially adapted for the manufacture or treatment of micro-structural devices or systems not provided for in B81C 99/001 to B81C 99/002
}
B81C 99/003
.
{
Characterising MEMS devices, e.g. measuring and identifying electrical or mechanical constants
}
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B81C 99/0035
.
{
Testing
}
B81C 99/004
. .
{
during manufacturing
}
B81C 99/0045
. .
{
End test of the packaged device
}
B81C 99/005
. .
{
Test apparatus
}
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B81C 99/0055
.
{
Manufacturing logistics
}
B81C 99/006
. .
{
Design; Simulation
}
B81C 99/0065
. .
{
Process control; Yield prediction
}
B81C 99/007
. .
{
Marking
}
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B81C 99/0075
.
{
Manufacture of substrate-free structures
}
B81C 99/008
. .
{
separating the processed structure from a mother substrate
}
B81C 99/0085
. .
{
using moulds and master templates, e.g. for hot-embossing
}
B81C 99/009
. .
{
Manufacturing the stamps or the moulds
}
B81C 99/0095
. .
{
Aspects relating to the manufacture of substrate-free structures, not covered by groups B81C 99/008 to B81C 99/009
}
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B81C 2001/00
Manufacture or treatment of devices or systems in or on a substrate (B81C 3/00 takes precedence)
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B81C 2001/00436
.
{
Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
}
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B81C 2001/00444
. .
{
Surface micromachining, i.e. structuring layers on the substrate
}
B81C 2001/00452
. . .
involving subtractive techniques other than etching
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B81C 2001/00722
.
{
Multistep processes for the planarisation of structures (planarising depositions C23C, H01L)
}
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B81C 2001/0073
. .
{
involving only addition of materials, i.e. additive planarisation
}
B81C 2001/00738
. . .
{
Selective addition
}
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B81C 2001/00746
. .
{
involving addition of material followed by removal of parts of said material, i.e. substractive planarisation
}
B81C 2001/00753
. . .
{
the addition of material being a selective deposition
}
B81C 2001/00761
. . .
{
Blanket removal, e.g. polishing
}
B81C 2001/00769
. . .
{
Selective removal
}
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B81C 2201/00
Manufacture or treatment of micro-structural devices or systems
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B81C 2201/01
.
in or on a substrate
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B81C 2201/0101
. .
Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
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B81C 2201/0102
. . .
Surface micromachining
B81C 2201/0104
. . . .
Chemical-mechanical polishing (CMP)
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B81C 2201/0105
. . . .
Sacrificial layer
B81C 2201/0107
. . . . .
Sacrificial metal
B81C 2201/0108
. . . . .
Sacrificial polymer, ashing of organics
B81C 2201/0109
. . . . .
Sacrificial layers not provided for in B81C 2201/0107 to B81C 2201/0108
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B81C 2201/0111
. . .
Bulk micromachining
B81C 2201/0112
. . . .
Bosch process
B81C 2201/0114
. . . .
Electrochemical etching, anodic oxidation
B81C 2201/0115
. . . .
Porous silicon
B81C 2201/0116
. . . .
Thermal treatment for structural rearrangement of substrate atoms, e.g. for making buried cavities
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B81C 2201/0118
. . .
Processes for the planarization of structures
B81C 2201/0119
. . . .
involving only addition of materials, i.e. additive planarization
B81C 2201/0121
. . . .
involving addition of material followed by removal of parts of said material, i.e. subtractive planarization
B81C 2201/0122
. . . .
Selective addition
B81C 2201/0123
. . . .
Selective removal
B81C 2201/0125
. . . .
Blanket removal, e.g. polishing
B81C 2201/0126
. . . .
Processes for the planarization of structures not provided for in B81C 2201/0119 to B81C 2201/0125
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B81C 2201/0128
. . .
Processes for removing material
B81C 2201/0129
. . . .
Diamond turning
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B81C 2201/013
. . . .
Etching
B81C 2201/0132
. . . . .
Dry etching, i.e. plasma etching, barrel etching, reactive ion etching (RIE), sputter etching or ion milling
B81C 2201/0133
. . . . .
Wet etching
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B81C 2201/0135
. . . . .
Controlling etch progression
B81C 2201/0136
. . . . . .
by doping limited material regions
B81C 2201/0138
. . . . . .
Monitoring physical parameters in the etching chamber, e.g. pressure, temperature or gas composition
B81C 2201/0139
. . . . . .
with the electric potential of an electrochemical etching
B81C 2201/014
. . . . . .
by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
B81C 2201/0142
. . . . . .
Processes for controlling etch progression not provided for in B81C 2201/0136 to B81C 2201/014
B81C 2201/0143
. . . .
Focussed beam, i.e. laser, ion or e-beam
B81C 2201/0145
. . . .
Spark erosion
B81C 2201/0146
. . . .
Processes for removing material not provided for in B81C 2201/0129 to B81C 2201/0145
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B81C 2201/0147
. . .
Film patterning
B81C 2201/0149
. . . .
Forming nanoscale microstructures using auto-arranging or self-assembling material
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B81C 2201/015
. . . .
Imprinting
B81C 2201/0152
. . . . .
Step and Flash imprinting, UV imprinting
B81C 2201/0153
. . . . .
Imprinting techniques not provided for in B81C 2201/0152
B81C 2201/0154
. . . .
other processes for film patterning not provided for in B81C 2201/0149 to B81C 2201/015
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B81C 2201/0156
. . .
Lithographic techniques
B81C 2201/0157
. . . .
Gray-scale mask technology
B81C 2201/0159
. . . .
Lithographic techniques not provided for in B81C 2201/0157
B81C 2201/016
. . .
Passivation
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B81C 2201/0161
. .
Controlling physical properties of the material
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B81C 2201/0163
. . .
Controlling internal stress of deposited layers
B81C 2201/0164
. . . .
by doping the layer
B81C 2201/0166
. . . .
by ion implantation
B81C 2201/0167
. . . .
by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
B81C 2201/0169
. . . .
by post-annealing
B81C 2201/017
. . . .
Methods for controlling internal stress of deposited layers not provided for in B81C 2201/0164 to B81C 2201/0169
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B81C 2201/0171
. . .
Doping materials
B81C 2201/0173
. . . .
Thermo-migration of impurities from a solid, e.g. from a doped deposited layer
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B81C 2201/0174
. .
for making multi-layered devices, film deposition or growing
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B81C 2201/0176
. . .
Chemical vapour Deposition
B81C 2201/0177
. . . .
Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy
B81C 2201/0178
. . . .
Oxidation
B81C 2201/018
. . . .
Plasma polymerization, i.e. monomer or polymer deposition
B81C 2201/0181
. . .
Physical Vapour Deposition (PVD), i.e. evaporation, sputtering, ion plating or plasma assisted deposition, ion cluster beam technology
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B81C 2201/0183
. . .
Selective deposition
B81C 2201/0184
. . . .
Digital lithography, e.g. using an inkjet print-head
B81C 2201/0185
. . . .
Printing, e.g. micro contact printing
B81C 2201/0187
. . . .
Controlled formation of micro- or nanostructures using a template positioned on a substrate
B81C 2201/0188
. . . .
Selective deposition techniques not provided for in B81C 2201/0184 to B81C 2201/0187
B81C 2201/019
. . .
Bonding or gluing multiple substrate layers
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B81C 2201/0191
. . .
Transfer of a layer from a carrier wafer to a device wafer
B81C 2201/0192
. . . .
by cleaving the carrier wafer
B81C 2201/0194
. . . .
the layer being structured
B81C 2201/0195
. . . .
the layer being unstructured
B81C 2201/0197
. . .
Processes for making multi-layered devices not provided for in groups B81C 2201/0176 to B81C 2201/0192
B81C 2201/0198
. .
for making a masking layer
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B81C 2201/03
.
Processes for manufacturing substrate-free structures
B81C 2201/032
. .
LIGA process
B81C 2201/034
. .
Moulding
B81C 2201/036
. .
Hot embossing
B81C 2201/038
. .
Processes for manufacturing substrate-free structures not provided for in B81C 2201/034 to B81C 2201/036
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B81C 2201/05
.
Temporary protection of devices or parts of the devices during manufacturing
B81C 2201/053
. .
Depositing a protective layers
B81C 2201/056
. .
Releasing structures at the end of the manufacturing process
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B81C 2201/11
.
Treatments for avoiding stiction of elastic or moving parts of MEMS
B81C 2201/112
. .
Depositing an anti-stiction or passivation coating, e.g. on the elastic or moving parts
B81C 2201/115
. .
Roughening a surface
B81C 2201/117
. .
Using supercritical fluid, e.g. carbon dioxide, for removing sacrificial layers
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B81C 2203/00
Forming micro-structural systems
Collapse
B81C 2203/01
.
Packaging MEMS
B81C 2203/0109
. .
Bonding an individual cap on the substrate
B81C 2203/0118
. .
Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
B81C 2203/0127
. .
Using a carrier for applying a plurality of packaging lids to the system wafer
B81C 2203/0136
. .
Growing or depositing of a covering layer
B81C 2203/0145
. .
Hermetically sealing an opening in the lid
B81C 2203/0154
. .
Moulding a cap over the MEMS device
B81C 2203/0163
. .
Reinforcing a cap, e.g. with ribs
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B81C 2203/0172
. .
Seals
B81C 2203/0181
. . .
Using micro-heaters for bonding the lid
B81C 2203/019
. . .
characterised by the material or arrangement of seals between parts
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B81C 2203/03
.
Bonding two components
B81C 2203/031
. .
Anodic bondings
B81C 2203/032
. .
Gluing
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B81C 2203/033
. .
Thermal bonding
B81C 2203/035
. . .
Soldering
B81C 2203/036
. . .
Fusion bonding
B81C 2203/037
. . .
Thermal bonding techniques not provided for in B81C 2203/035 to B81C 2203/036
B81C 2203/038
. .
Bonding techniques not provided for in B81C 2203/031 to L81C203/03S
Collapse
B81C 2203/05
.
Aligning components to be assembled
B81C 2203/051
. .
Active alignment, e.g. using internal or external actuators, magnets, sensors, marks or marks detectors
Collapse
B81C 2203/052
. .
Passive alignment, i.e. using only structural arrangements or thermodynamic forces without an internal or external apparatus
B81C 2203/054
. . .
using structural alignment aids, e.g. spacers, interposers, male/female parts, rods or balls
B81C 2203/055
. . .
using the surface tension of fluid solder to align the elements
B81C 2203/057
. . .
Passive alignment techniques not provided for in B81C 2203/054 to B81C 2203/055
B81C 2203/058
. .
Aligning components using methods not provided for in B81C 2203/051 to B81C 2203/052
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B81C 2203/07
.
Integrating an electronic processing unit with a micromechanical structure
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B81C 2203/0707
. .
Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
B81C 2203/0714
. . .
Forming the micromechanical structure with a CMOS process
B81C 2203/0721
. . .
Forming the micromechanical structure with a low-temperature process (B81C 2203/0735 takes precedence)
B81C 2203/0728
. . .
Pre-CMOS, i.e. forming the micromechanical structure before the CMOS circuit
B81C 2203/0735
. . .
Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
B81C 2203/0742
. . .
Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit
B81C 2203/075
. . .
the electronic processing unit being integrated into an element of the micromechanical structure
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B81C 2203/0757
. . .
Topology for facilitating the monolithic integration
B81C 2203/0764
. . . .
Forming the micromechanical structure in a groove
B81C 2203/0771
. . . .
Stacking the electronic processing unit and the micromechanical structure
B81C 2203/0778
. . . .
Topology for facilitating the monolithic integration not provided for in B81C 2203/0764 to B81C 2203/0771
Collapse
B81C 2203/0785
. .
Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates
B81C 2203/0792
. . .
Forming interconnections between the electronic processing unit and the micromechanical structure
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B81C 2900/00
Apparatus specially adapted for the manufacture or treatment of micro-structural devices or systems
B81C 2900/02
.
Micro extrusion heads
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Last Modified: 04/16/2013 4:31:16 PM