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Class   438SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS
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 [List of Pre Grant Publications for class 438 subclass 1][List of Patents for class 438 subclass 1]1 HAVING BIOMATERIAL COMPONENT OR INTEGRATED WITH LIVING ORGANISM
 [List of Pre Grant Publications for class 438 subclass 2][List of Patents for class 438 subclass 2]2 HAVING SUPERCONDUCTIVE COMPONENT
 [List of Pre Grant Publications for class 438 subclass 3][List of Patents for class 438 subclass 3]3 HAVING MAGNETIC OR FERROELECTRIC COMPONENT
 [List of Pre Grant Publications for class 438 subclass 4][List of Patents for class 438 subclass 4]4 REPAIR OR RESTORATION
[List of Pre Grant Publications for class 438 subclass 5][List of Patents for class 438 subclass 5]5 INCLUDING CONTROL RESPONSIVE TO SENSED CONDITION
 [List of Pre Grant Publications for class 438 subclass 6][List of Patents for class 438 subclass 6]6 Subclass 6 indent level is 1 Interconnecting plural devices on semiconductor substrate
[List of Pre Grant Publications for class 438 subclass 7][List of Patents for class 438 subclass 7]7 Subclass 7 indent level is 1 Optical characteristic sensed
[List of Pre Grant Publications for class 438 subclass 8][List of Patents for class 438 subclass 8]8 Subclass 8 indent level is 2 Chemical etching
[List of Pre Grant Publications for class 438 subclass 10][List of Patents for class 438 subclass 10]10 Subclass 10 indent level is 1 Electrical characteristic sensed
 [List of Pre Grant Publications for class 438 subclass 11][List of Patents for class 438 subclass 11]11 Subclass 11 indent level is 2 Utilizing integral test element
 [List of Pre Grant Publications for class 438 subclass 12][List of Patents for class 438 subclass 12]12 Subclass 12 indent level is 2 And removal of defect
 [List of Pre Grant Publications for class 438 subclass 13][List of Patents for class 438 subclass 13]13 Subclass 13 indent level is 2 Altering electrical property by material removal
[List of Pre Grant Publications for class 438 subclass 14][List of Patents for class 438 subclass 14]14 WITH MEASURING OR TESTING
 [List of Pre Grant Publications for class 438 subclass 15][List of Patents for class 438 subclass 15]15 Subclass 15 indent level is 1 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
 [List of Pre Grant Publications for class 438 subclass 16][List of Patents for class 438 subclass 16]16 Subclass 16 indent level is 1 Optical characteristic sensed
[List of Pre Grant Publications for class 438 subclass 17][List of Patents for class 438 subclass 17]17 Subclass 17 indent level is 1 Electrical characteristic sensed
 [List of Pre Grant Publications for class 438 subclass 18][List of Patents for class 438 subclass 18]18 Subclass 18 indent level is 2 Utilizing integral test element
 [List of Pre Grant Publications for class 438 subclass 19][List of Patents for class 438 subclass 19]19 HAVING INTEGRAL POWER SOURCE (E.G., BATTERY, ETC.)
 [List of Pre Grant Publications for class 438 subclass 20][List of Patents for class 438 subclass 20]20 ELECTRON EMITTER MANUFACTURE
 [List of Pre Grant Publications for class 438 subclass 21][List of Patents for class 438 subclass 21]21 MANUFACTURE OF ELECTRICAL DEVICE CONTROLLED PRINTHEAD
[List of Pre Grant Publications for class 438 subclass 22][List of Patents for class 438 subclass 22]22 MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL
[List of Pre Grant Publications for class 438 subclass 23][List of Patents for class 438 subclass 23]23 Subclass 23 indent level is 1 Having diverse electrical device
[List of Pre Grant Publications for class 438 subclass 24][List of Patents for class 438 subclass 24]24 Subclass 24 indent level is 2 Including device responsive to nonelectrical signal
[List of Pre Grant Publications for class 438 subclass 26][List of Patents for class 438 subclass 26]26 Subclass 26 indent level is 1 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
 [List of Pre Grant Publications for class 438 subclass 27][List of Patents for class 438 subclass 27]27 Subclass 27 indent level is 2 Having additional optical element (e.g., optical fiber, etc.)
 [List of Pre Grant Publications for class 438 subclass 28][List of Patents for class 438 subclass 28]28 Subclass 28 indent level is 2 Plural emissive devices
[List of Pre Grant Publications for class 438 subclass 29][List of Patents for class 438 subclass 29]29 Subclass 29 indent level is 1 Including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.)
 [List of Pre Grant Publications for class 438 subclass 30][List of Patents for class 438 subclass 30]30 Subclass 30 indent level is 2 Liquid crystal component
 [List of Pre Grant Publications for class 438 subclass 31][List of Patents for class 438 subclass 31]31 Subclass 31 indent level is 2 Optical waveguide structure
 [List of Pre Grant Publications for class 438 subclass 32][List of Patents for class 438 subclass 32]32 Subclass 32 indent level is 2 Optical grating structure
 [List of Pre Grant Publications for class 438 subclass 33][List of Patents for class 438 subclass 33]33 Subclass 33 indent level is 1 Substrate dicing
[List of Pre Grant Publications for class 438 subclass 34][List of Patents for class 438 subclass 34]34 Subclass 34 indent level is 1 Making emissive array
 [List of Pre Grant Publications for class 438 subclass 35][List of Patents for class 438 subclass 35]35 Subclass 35 indent level is 2 Multiple wavelength emissive
 [List of Pre Grant Publications for class 438 subclass 36][List of Patents for class 438 subclass 36]36 Subclass 36 indent level is 1 Ordered or disordered
 [List of Pre Grant Publications for class 438 subclass 37][List of Patents for class 438 subclass 37]37 Subclass 37 indent level is 1 Graded composition
 [List of Pre Grant Publications for class 438 subclass 38][List of Patents for class 438 subclass 38]38 Subclass 38 indent level is 1 Passivating of surface
[List of Pre Grant Publications for class 438 subclass 39][List of Patents for class 438 subclass 39]39 Subclass 39 indent level is 1 Mesa formation
 [List of Pre Grant Publications for class 438 subclass 40][List of Patents for class 438 subclass 40]40 Subclass 40 indent level is 2 Tapered etching
 [List of Pre Grant Publications for class 438 subclass 41][List of Patents for class 438 subclass 41]41 Subclass 41 indent level is 2 With epitaxial deposition of semiconductor adjacent mesa
[List of Pre Grant Publications for class 438 subclass 42][List of Patents for class 438 subclass 42]42 Subclass 42 indent level is 1 Groove formation
 [List of Pre Grant Publications for class 438 subclass 43][List of Patents for class 438 subclass 43]43 Subclass 43 indent level is 2 Tapered etching
 [List of Pre Grant Publications for class 438 subclass 44][List of Patents for class 438 subclass 44]44 Subclass 44 indent level is 2 With epitaxial deposition of semiconductor in groove
 [List of Pre Grant Publications for class 438 subclass 45][List of Patents for class 438 subclass 45]45 Subclass 45 indent level is 1 Dopant introduction into semiconductor region
[List of Pre Grant Publications for class 438 subclass 46][List of Patents for class 438 subclass 46]46 Subclass 46 indent level is 1 Compound semiconductor
 [List of Pre Grant Publications for class 438 subclass 47][List of Patents for class 438 subclass 47]47 Subclass 47 indent level is 2 Heterojunction
[List of Pre Grant Publications for class 438 subclass 48][List of Patents for class 438 subclass 48]48 MAKING DEVICE OR CIRCUIT RESPONSIVE TO NONELECTRICAL SIGNAL
 [List of Pre Grant Publications for class 438 subclass 49][List of Patents for class 438 subclass 49]49 Subclass 49 indent level is 1 Chemically responsive
[List of Pre Grant Publications for class 438 subclass 50][List of Patents for class 438 subclass 50]50 Subclass 50 indent level is 1 Physical stress responsive
 [List of Pre Grant Publications for class 438 subclass 51][List of Patents for class 438 subclass 51]51 Subclass 51 indent level is 2 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
 [List of Pre Grant Publications for class 438 subclass 52][List of Patents for class 438 subclass 52]52 Subclass 52 indent level is 2 Having cantilever element
 [List of Pre Grant Publications for class 438 subclass 53][List of Patents for class 438 subclass 53]53 Subclass 53 indent level is 2 Having diaphragm element
[List of Pre Grant Publications for class 438 subclass 54][List of Patents for class 438 subclass 54]54 Subclass 54 indent level is 1 Thermally responsive
 [List of Pre Grant Publications for class 438 subclass 55][List of Patents for class 438 subclass 55]55 Subclass 55 indent level is 2 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
 [List of Pre Grant Publications for class 438 subclass 56][List of Patents for class 438 subclass 56]56 Subclass 56 indent level is 1 Responsive to corpuscular radiation (e.g., nuclear particle detector, etc.)
[List of Pre Grant Publications for class 438 subclass 57][List of Patents for class 438 subclass 57]57 Subclass 57 indent level is 1 Responsive to electromagnetic radiation
 [List of Pre Grant Publications for class 438 subclass 58][List of Patents for class 438 subclass 58]58 Subclass 58 indent level is 2 Gettering of substrate
[List of Pre Grant Publications for class 438 subclass 59][List of Patents for class 438 subclass 59]59 Subclass 59 indent level is 2 Having diverse electrical device
[List of Pre Grant Publications for class 438 subclass 61][List of Patents for class 438 subclass 61]61 Subclass 61 indent level is 2 Continuous processing
 [List of Pre Grant Publications for class 438 subclass 63][List of Patents for class 438 subclass 63]63 Subclass 63 indent level is 2 Particulate semiconductor component
[List of Pre Grant Publications for class 438 subclass 64][List of Patents for class 438 subclass 64]64 Subclass 64 indent level is 2 Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor
 [List of Pre Grant Publications for class 438 subclass 68][List of Patents for class 438 subclass 68]68 Subclass 68 indent level is 2 Substrate dicing
[List of Pre Grant Publications for class 438 subclass 69][List of Patents for class 438 subclass 69]69 Subclass 69 indent level is 2 Including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.)
[List of Pre Grant Publications for class 438 subclass 73][List of Patents for class 438 subclass 73]73 Subclass 73 indent level is 2 Making electromagnetic responsive array
 [List of Pre Grant Publications for class 438 subclass 82][List of Patents for class 438 subclass 82]82 Subclass 82 indent level is 2 Having organic semiconductor component
 [List of Pre Grant Publications for class 438 subclass 83][List of Patents for class 438 subclass 83]83 Subclass 83 indent level is 2 Forming point contact
 [List of Pre Grant Publications for class 438 subclass 84][List of Patents for class 438 subclass 84]84 Subclass 84 indent level is 2 Having selenium or tellurium elemental semiconductor component
[List of Pre Grant Publications for class 438 subclass 85][List of Patents for class 438 subclass 85]85 Subclass 85 indent level is 2 Having metal oxide or copper sulfide compound semiconductive component
 [List of Pre Grant Publications for class 438 subclass 87][List of Patents for class 438 subclass 87]87 Subclass 87 indent level is 2 Graded composition
 [List of Pre Grant Publications for class 438 subclass 88][List of Patents for class 438 subclass 88]88 Subclass 88 indent level is 2 Direct application of electric current
 [List of Pre Grant Publications for class 438 subclass 89][List of Patents for class 438 subclass 89]89 Subclass 89 indent level is 2 Fusion or solidification of semiconductor region
 [List of Pre Grant Publications for class 438 subclass 90][List of Patents for class 438 subclass 90]90 Subclass 90 indent level is 2 Including storage of electrical charge in substrate
 [List of Pre Grant Publications for class 438 subclass 91][List of Patents for class 438 subclass 91]91 Subclass 91 indent level is 2 Avalanche diode
 [List of Pre Grant Publications for class 438 subclass 92][List of Patents for class 438 subclass 92]92 Subclass 92 indent level is 2 Schottky barrier junction
[List of Pre Grant Publications for class 438 subclass 93][List of Patents for class 438 subclass 93]93 Subclass 93 indent level is 2 Compound semiconductor
 [List of Pre Grant Publications for class 438 subclass 96][List of Patents for class 438 subclass 96]96 Subclass 96 indent level is 2 Amorphous semiconductor
 [List of Pre Grant Publications for class 438 subclass 97][List of Patents for class 438 subclass 97]97 Subclass 97 indent level is 2 Polycrystalline semiconductor
 [List of Pre Grant Publications for class 438 subclass 98][List of Patents for class 438 subclass 98]98 Subclass 98 indent level is 2 Contact formation (i.e., metallization)
 [List of Pre Grant Publications for class 438 subclass 99][List of Patents for class 438 subclass 99]99 HAVING ORGANIC SEMICONDUCTIVE COMPONENT
[List of Pre Grant Publications for class 438 subclass 100][List of Patents for class 438 subclass 100]100 MAKING POINT CONTACT DEVICE
 [List of Pre Grant Publications for class 438 subclass 101][List of Patents for class 438 subclass 101]101 Subclass 101 indent level is 1 Direct application of electrical current
[List of Pre Grant Publications for class 438 subclass 102][List of Patents for class 438 subclass 102]102 HAVING SELENIUM OR TELLURIUM ELEMENTAL SEMICONDUCTOR COMPONENT
 [List of Pre Grant Publications for class 438 subclass 103][List of Patents for class 438 subclass 103]103 Subclass 103 indent level is 1 Direct application of electrical current
 [List of Pre Grant Publications for class 438 subclass 104][List of Patents for class 438 subclass 104]104 HAVING METAL OXIDE OR COPPER SULFIDE COMPOUND SEMICONDUCTOR COMPONENT
 [List of Pre Grant Publications for class 438 subclass 105][List of Patents for class 438 subclass 105]105 HAVING DIAMOND SEMICONDUCTOR COMPONENT
[List of Pre Grant Publications for class 438 subclass 106][List of Patents for class 438 subclass 106]106 PACKAGING (E.G., WITH MOUNTING, ENCAPSULATING, ETC.) OR TREATMENT OF PACKAGED SEMICONDUCTOR
[List of Pre Grant Publications for class 438 subclass 107][List of Patents for class 438 subclass 107]107 Subclass 107 indent level is 1 Assembly of plural semiconductive substrates each possessing electrical device
 [List of Pre Grant Publications for class 438 subclass 108][List of Patents for class 438 subclass 108]108 Subclass 108 indent level is 2 Flip-chip-type assembly
 [List of Pre Grant Publications for class 438 subclass 109][List of Patents for class 438 subclass 109]109 Subclass 109 indent level is 2 Stacked array (e.g., rectifier, etc.)
[List of Pre Grant Publications for class 438 subclass 110][List of Patents for class 438 subclass 110]110 Subclass 110 indent level is 1 Making plural separate devices
[List of Pre Grant Publications for class 438 subclass 111][List of Patents for class 438 subclass 111]111 Subclass 111 indent level is 2 Using strip lead frame
[List of Pre Grant Publications for class 438 subclass 113][List of Patents for class 438 subclass 113]113 Subclass 113 indent level is 2 Substrate dicing
 [List of Pre Grant Publications for class 438 subclass 115][List of Patents for class 438 subclass 115]115 Subclass 115 indent level is 1 Including contaminant removal or mitigation
 [List of Pre Grant Publications for class 438 subclass 116][List of Patents for class 438 subclass 116]116 Subclass 116 indent level is 1 Having light transmissive window
 [List of Pre Grant Publications for class 438 subclass 117][List of Patents for class 438 subclass 117]117 Subclass 117 indent level is 1 Incorporating resilient component (e.g., spring, etc.)
[List of Pre Grant Publications for class 438 subclass 118][List of Patents for class 438 subclass 118]118 Subclass 118 indent level is 1 Including adhesive bonding step
 [List of Pre Grant Publications for class 438 subclass 119][List of Patents for class 438 subclass 119]119 Subclass 119 indent level is 2 Electrically conductive adhesive
 [List of Pre Grant Publications for class 438 subclass 120][List of Patents for class 438 subclass 120]120 Subclass 120 indent level is 1 With vibration step
[List of Pre Grant Publications for class 438 subclass 121][List of Patents for class 438 subclass 121]121 Subclass 121 indent level is 1 Metallic housing or support
 [List of Pre Grant Publications for class 438 subclass 122][List of Patents for class 438 subclass 122]122 Subclass 122 indent level is 2 Possessing thermal dissipation structure (i.e., heat sink)
 [List of Pre Grant Publications for class 438 subclass 123][List of Patents for class 438 subclass 123]123 Subclass 123 indent level is 2 Lead frame
 [List of Pre Grant Publications for class 438 subclass 124][List of Patents for class 438 subclass 124]124 Subclass 124 indent level is 2 And encapsulating
[List of Pre Grant Publications for class 438 subclass 125][List of Patents for class 438 subclass 125]125 Subclass 125 indent level is 1 Insulative housing or support
 [List of Pre Grant Publications for class 438 subclass 126][List of Patents for class 438 subclass 126]126 Subclass 126 indent level is 2 And encapsulating
 [List of Pre Grant Publications for class 438 subclass 127][List of Patents for class 438 subclass 127]127 Subclass 127 indent level is 1 Encapsulating
[List of Pre Grant Publications for class 438 subclass 128][List of Patents for class 438 subclass 128]128 MAKING DEVICE ARRAY AND SELECTIVELY INTERCONNECTING
 [List of Pre Grant Publications for class 438 subclass 129][List of Patents for class 438 subclass 129]129 Subclass 129 indent level is 1 With electrical circuit layout
 [List of Pre Grant Publications for class 438 subclass 130][List of Patents for class 438 subclass 130]130 Subclass 130 indent level is 1 Rendering selected devices operable or inoperable
 [List of Pre Grant Publications for class 438 subclass 131][List of Patents for class 438 subclass 131]131 Subclass 131 indent level is 1 Using structure alterable to conductive state (i.e., antifuse)
 [List of Pre Grant Publications for class 438 subclass 132][List of Patents for class 438 subclass 132]132 Subclass 132 indent level is 1 Using structure alterable to nonconductive state (i.e., fuse)
[List of Pre Grant Publications for class 438 subclass 133][List of Patents for class 438 subclass 133]133 MAKING REGENERATIVE-TYPE SWITCHING DEVICE (E.G., SCR, IGBT, THYRISTOR, ETC.)
 [List of Pre Grant Publications for class 438 subclass 134][List of Patents for class 438 subclass 134]134 Subclass 134 indent level is 1 Bidirectional rectifier with control electrode (e.g., triac, diac, etc.)
[List of Pre Grant Publications for class 438 subclass 135][List of Patents for class 438 subclass 135]135 Subclass 135 indent level is 1 Having field effect structure
[List of Pre Grant Publications for class 438 subclass 136][List of Patents for class 438 subclass 136]136 Subclass 136 indent level is 2 Junction gate
 [List of Pre Grant Publications for class 438 subclass 138][List of Patents for class 438 subclass 138]138 Subclass 138 indent level is 2 Vertical channel
 [List of Pre Grant Publications for class 438 subclass 139][List of Patents for class 438 subclass 139]139 Subclass 139 indent level is 1 Altering electrical characteristic
 [List of Pre Grant Publications for class 438 subclass 140][List of Patents for class 438 subclass 140]140 Subclass 140 indent level is 1 Having structure increasing breakdown voltage (e.g., guard ring, field plate, etc.)
 [List of Pre Grant Publications for class 438 subclass 141][List of Patents for class 438 subclass 141]141 MAKING CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR, ETC.)
[List of Pre Grant Publications for class 438 subclass 142][List of Patents for class 438 subclass 142]142 MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS
 [List of Pre Grant Publications for class 438 subclass 143][List of Patents for class 438 subclass 143]143 Subclass 143 indent level is 1 Gettering of semiconductor substrate
[List of Pre Grant Publications for class 438 subclass 144][List of Patents for class 438 subclass 144]144 Subclass 144 indent level is 1 Charge transfer device (e.g., CCD, etc.)
 [List of Pre Grant Publications for class 438 subclass 145][List of Patents for class 438 subclass 145]145 Subclass 145 indent level is 2 Having additional electrical device
 [List of Pre Grant Publications for class 438 subclass 146][List of Patents for class 438 subclass 146]146 Subclass 146 indent level is 2 Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)
 [List of Pre Grant Publications for class 438 subclass 147][List of Patents for class 438 subclass 147]147 Subclass 147 indent level is 2 Changing width or direction of channel (e.g., meandering channel, etc.)
 [List of Pre Grant Publications for class 438 subclass 148][List of Patents for class 438 subclass 148]148 Subclass 148 indent level is 2 Substantially incomplete signal charge transfer (e.g., bucket brigade, etc.)
[List of Pre Grant Publications for class 438 subclass 149][List of Patents for class 438 subclass 149]149 Subclass 149 indent level is 1 On insulating substrate or layer (e.g., TFT, etc.)
 [List of Pre Grant Publications for class 438 subclass 150][List of Patents for class 438 subclass 150]150 Subclass 150 indent level is 2 Specified crystallographic orientation
[List of Pre Grant Publications for class 438 subclass 151][List of Patents for class 438 subclass 151]151 Subclass 151 indent level is 2 Having insulated gate
[List of Pre Grant Publications for class 438 subclass 167][List of Patents for class 438 subclass 167]167 Subclass 167 indent level is 1 Having Schottky gate (e.g., MESFET, HEMT, etc.)
 [List of Pre Grant Publications for class 438 subclass 168][List of Patents for class 438 subclass 168]168 Subclass 168 indent level is 2 Specified crystallographic orientation
 [List of Pre Grant Publications for class 438 subclass 169][List of Patents for class 438 subclass 169]169 Subclass 169 indent level is 2 Complementary Schottky gate field effect transistors
 [List of Pre Grant Publications for class 438 subclass 170][List of Patents for class 438 subclass 170]170 Subclass 170 indent level is 2 And bipolar device
 [List of Pre Grant Publications for class 438 subclass 171][List of Patents for class 438 subclass 171]171 Subclass 171 indent level is 2 And passive electrical device (e.g., resistor, capacitor, etc.)
 [List of Pre Grant Publications for class 438 subclass 172][List of Patents for class 438 subclass 172]172 Subclass 172 indent level is 2 Having heterojunction (e.g., HEMT, MODFET, etc.)
 [List of Pre Grant Publications for class 438 subclass 173][List of Patents for class 438 subclass 173]173 Subclass 173 indent level is 2 Vertical channel
 [List of Pre Grant Publications for class 438 subclass 174][List of Patents for class 438 subclass 174]174 Subclass 174 indent level is 2 Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)
 [List of Pre Grant Publications for class 438 subclass 175][List of Patents for class 438 subclass 175]175 Subclass 175 indent level is 2 Buried channel
 [List of Pre Grant Publications for class 438 subclass 176][List of Patents for class 438 subclass 176]176 Subclass 176 indent level is 2 Plural gate electrodes (e.g., dual gate, etc.)
 [List of Pre Grant Publications for class 438 subclass 177][List of Patents for class 438 subclass 177]177 Subclass 177 indent level is 2 Closed or loop gate
 [List of Pre Grant Publications for class 438 subclass 178][List of Patents for class 438 subclass 178]178 Subclass 178 indent level is 2 Elemental semiconductor
 [List of Pre Grant Publications for class 438 subclass 179][List of Patents for class 438 subclass 179]179 Subclass 179 indent level is 2 Asymmetric
[List of Pre Grant Publications for class 438 subclass 180][List of Patents for class 438 subclass 180]180 Subclass 180 indent level is 2 Self-aligned
[List of Pre Grant Publications for class 438 subclass 186][List of Patents for class 438 subclass 186]186 Subclass 186 indent level is 1 Having junction gate (e.g., JFET, SIT, etc.)
 [List of Pre Grant Publications for class 438 subclass 187][List of Patents for class 438 subclass 187]187 Subclass 187 indent level is 2 Specified crystallographic orientation
 [List of Pre Grant Publications for class 438 subclass 188][List of Patents for class 438 subclass 188]188 Subclass 188 indent level is 2 Complementary junction gate field effect transistors
 [List of Pre Grant Publications for class 438 subclass 189][List of Patents for class 438 subclass 189]189 Subclass 189 indent level is 2 And bipolar transistor
 [List of Pre Grant Publications for class 438 subclass 190][List of Patents for class 438 subclass 190]190 Subclass 190 indent level is 2 And passive device (e.g., resistor, capacitor, etc.)
 [List of Pre Grant Publications for class 438 subclass 191][List of Patents for class 438 subclass 191]191 Subclass 191 indent level is 2 Having heterojunction
[List of Pre Grant Publications for class 438 subclass 192][List of Patents for class 438 subclass 192]192 Subclass 192 indent level is 2 Vertical channel
 [List of Pre Grant Publications for class 438 subclass 194][List of Patents for class 438 subclass 194]194 Subclass 194 indent level is 2 Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)
 [List of Pre Grant Publications for class 438 subclass 195][List of Patents for class 438 subclass 195]195 Subclass 195 indent level is 2 Plural gate electrodes
 [List of Pre Grant Publications for class 438 subclass 196][List of Patents for class 438 subclass 196]196 Subclass 196 indent level is 2 Including isolation structure
[List of Pre Grant Publications for class 438 subclass 197][List of Patents for class 438 subclass 197]197 Subclass 197 indent level is 1 Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.)
 [List of Pre Grant Publications for class 438 subclass 198][List of Patents for class 438 subclass 198]198 Subclass 198 indent level is 2 Specified crystallographic orientation
[List of Pre Grant Publications for class 438 subclass 199][List of Patents for class 438 subclass 199]199 Subclass 199 indent level is 2 Complementary insulated gate field effect transistors (i.e., CMOS)
[List of Pre Grant Publications for class 438 subclass 200][List of Patents for class 438 subclass 200]200 Subclass 200 indent level is 3 And additional electrical device
 [List of Pre Grant Publications for class 438 subclass 211][List of Patents for class 438 subclass 211]211 Subclass 211 indent level is 3 Having gate surrounded by dielectric (i.e., floating gate)
 [List of Pre Grant Publications for class 438 subclass 212][List of Patents for class 438 subclass 212]212 Subclass 212 indent level is 3 Vertical channel
 [List of Pre Grant Publications for class 438 subclass 213][List of Patents for class 438 subclass 213]213 Subclass 213 indent level is 3 Common active region
 [List of Pre Grant Publications for class 438 subclass 214][List of Patents for class 438 subclass 214]214 Subclass 214 indent level is 3 Having underpass or crossunder
 [List of Pre Grant Publications for class 438 subclass 215][List of Patents for class 438 subclass 215]215 Subclass 215 indent level is 3 Having fuse or integral short
 [List of Pre Grant Publications for class 438 subclass 216][List of Patents for class 438 subclass 216]216 Subclass 216 indent level is 3 Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound
 [List of Pre Grant Publications for class 438 subclass 217][List of Patents for class 438 subclass 217]217 Subclass 217 indent level is 3 Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.)
[List of Pre Grant Publications for class 438 subclass 218][List of Patents for class 438 subclass 218]218 Subclass 218 indent level is 3 Including isolation structure
[List of Pre Grant Publications for class 438 subclass 229][List of Patents for class 438 subclass 229]229 Subclass 229 indent level is 3 Self-aligned
 [List of Pre Grant Publications for class 438 subclass 233][List of Patents for class 438 subclass 233]233 Subclass 233 indent level is 3 And contact formation
[List of Pre Grant Publications for class 438 subclass 234][List of Patents for class 438 subclass 234]234 Subclass 234 indent level is 2 Including bipolar transistor (i.e., BiMOS)
 [List of Pre Grant Publications for class 438 subclass 237][List of Patents for class 438 subclass 237]237 Subclass 237 indent level is 2 Including diode
[List of Pre Grant Publications for class 438 subclass 238][List of Patents for class 438 subclass 238]238 Subclass 238 indent level is 2 Including passive device (e.g., resistor, capacitor, etc.)
[List of Pre Grant Publications for class 438 subclass 257][List of Patents for class 438 subclass 257]257 Subclass 257 indent level is 2 Having additional gate electrode surrounded by dielectric (i.e., floating gate)
[List of Pre Grant Publications for class 438 subclass 268][List of Patents for class 438 subclass 268]268 Subclass 268 indent level is 2 Vertical channel
[List of Pre Grant Publications for class 438 subclass 275][List of Patents for class 438 subclass 275]275 Subclass 275 indent level is 2 Making plural insulated gate field effect transistors of differing electrical characteristics
 [List of Pre Grant Publications for class 438 subclass 279][List of Patents for class 438 subclass 279]279 Subclass 279 indent level is 2 Making plural insulated gate field effect transistors having common active region
 [List of Pre Grant Publications for class 438 subclass 280][List of Patents for class 438 subclass 280]280 Subclass 280 indent level is 2 Having underpass or crossunder
 [List of Pre Grant Publications for class 438 subclass 281][List of Patents for class 438 subclass 281]281 Subclass 281 indent level is 2 Having fuse or integral short
 [List of Pre Grant Publications for class 438 subclass 282][List of Patents for class 438 subclass 282]282 Subclass 282 indent level is 2 Buried channel
 [List of Pre Grant Publications for class 438 subclass 283][List of Patents for class 438 subclass 283]283 Subclass 283 indent level is 2 Plural gate electrodes (e.g., dual gate, etc.)
 [List of Pre Grant Publications for class 438 subclass 284][List of Patents for class 438 subclass 284]284 Subclass 284 indent level is 2 Closed or loop gate
 [List of Pre Grant Publications for class 438 subclass 285][List of Patents for class 438 subclass 285]285 Subclass 285 indent level is 2 Utilizing compound semiconductor
 [List of Pre Grant Publications for class 438 subclass 286][List of Patents for class 438 subclass 286]286 Subclass 286 indent level is 2 Asymmetric
 [List of Pre Grant Publications for class 438 subclass 287][List of Patents for class 438 subclass 287]287 Subclass 287 indent level is 2 Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound
 [List of Pre Grant Publications for class 438 subclass 288][List of Patents for class 438 subclass 288]288 Subclass 288 indent level is 2 Having step of storing electrical charge in gate dielectric
[List of Pre Grant Publications for class 438 subclass 289][List of Patents for class 438 subclass 289]289 Subclass 289 indent level is 2 Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.)
 [List of Pre Grant Publications for class 438 subclass 292][List of Patents for class 438 subclass 292]292 Subclass 292 indent level is 2 Direct application of electrical current
 [List of Pre Grant Publications for class 438 subclass 293][List of Patents for class 438 subclass 293]293 Subclass 293 indent level is 2 Fusion or solidification of semiconductor region
[List of Pre Grant Publications for class 438 subclass 294][List of Patents for class 438 subclass 294]294 Subclass 294 indent level is 2 Including isolation structure
[List of Pre Grant Publications for class 438 subclass 299][List of Patents for class 438 subclass 299]299 Subclass 299 indent level is 2 Self-aligned
 [List of Pre Grant Publications for class 438 subclass 308][List of Patents for class 438 subclass 308]308 Subclass 308 indent level is 2 Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)
[List of Pre Grant Publications for class 438 subclass 309][List of Patents for class 438 subclass 309]309 FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS
 [List of Pre Grant Publications for class 438 subclass 310][List of Patents for class 438 subclass 310]310 Subclass 310 indent level is 1 Gettering of semiconductor substrate
 [List of Pre Grant Publications for class 438 subclass 311][List of Patents for class 438 subclass 311]311 Subclass 311 indent level is 1 On insulating substrate or layer (i.e., SOI type)
[List of Pre Grant Publications for class 438 subclass 312][List of Patents for class 438 subclass 312]312 Subclass 312 indent level is 1 Having heterojunction
 [List of Pre Grant Publications for class 438 subclass 313][List of Patents for class 438 subclass 313]313 Subclass 313 indent level is 2 Complementary bipolar transistors
 [List of Pre Grant Publications for class 438 subclass 314][List of Patents for class 438 subclass 314]314 Subclass 314 indent level is 2 And additional electrical device
 [List of Pre Grant Publications for class 438 subclass 315][List of Patents for class 438 subclass 315]315 Subclass 315 indent level is 2 Forming inverted transistor structure
 [List of Pre Grant Publications for class 438 subclass 316][List of Patents for class 438 subclass 316]316 Subclass 316 indent level is 2 Forming lateral transistor structure
 [List of Pre Grant Publications for class 438 subclass 317][List of Patents for class 438 subclass 317]317 Subclass 317 indent level is 2 Wide bandgap emitter
[List of Pre Grant Publications for class 438 subclass 318][List of Patents for class 438 subclass 318]318 Subclass 318 indent level is 2 Including isolation structure
[List of Pre Grant Publications for class 438 subclass 320][List of Patents for class 438 subclass 320]320 Subclass 320 indent level is 2 Self-aligned
[List of Pre Grant Publications for class 438 subclass 322][List of Patents for class 438 subclass 322]322 Subclass 322 indent level is 1 Complementary bipolar transistors
[List of Pre Grant Publications for class 438 subclass 323][List of Patents for class 438 subclass 323]323 Subclass 323 indent level is 2 Having common active region (i.e., integrated injection logic (I2L), etc.)
 [List of Pre Grant Publications for class 438 subclass 326][List of Patents for class 438 subclass 326]326 Subclass 326 indent level is 2 Including additional electrical device
 [List of Pre Grant Publications for class 438 subclass 327][List of Patents for class 438 subclass 327]327 Subclass 327 indent level is 2 Having lateral bipolar transistor
 [List of Pre Grant Publications for class 438 subclass 328][List of Patents for class 438 subclass 328]328 Subclass 328 indent level is 1 Including diode
[List of Pre Grant Publications for class 438 subclass 329][List of Patents for class 438 subclass 329]329 Subclass 329 indent level is 1 Including passive device (e.g., resistor, capacitor, etc.)
[List of Pre Grant Publications for class 438 subclass 330][List of Patents for class 438 subclass 330]330 Subclass 330 indent level is 2 Resistor
 [List of Pre Grant Publications for class 438 subclass 333][List of Patents for class 438 subclass 333]333 Subclass 333 indent level is 1 Having fuse or integral short
 [List of Pre Grant Publications for class 438 subclass 334][List of Patents for class 438 subclass 334]334 Subclass 334 indent level is 1 Forming inverted transistor structure
[List of Pre Grant Publications for class 438 subclass 335][List of Patents for class 438 subclass 335]335 Subclass 335 indent level is 1 Forming lateral transistor structure
 [List of Pre Grant Publications for class 438 subclass 336][List of Patents for class 438 subclass 336]336 Subclass 336 indent level is 2 Combined with vertical bipolar transistor
 [List of Pre Grant Publications for class 438 subclass 337][List of Patents for class 438 subclass 337]337 Subclass 337 indent level is 2 Active region formed along groove or exposed edge in semiconductor
 [List of Pre Grant Publications for class 438 subclass 338][List of Patents for class 438 subclass 338]338 Subclass 338 indent level is 2 Having multiple emitter or collector structure
 [List of Pre Grant Publications for class 438 subclass 339][List of Patents for class 438 subclass 339]339 Subclass 339 indent level is 2 Self-aligned
 [List of Pre Grant Publications for class 438 subclass 340][List of Patents for class 438 subclass 340]340 Subclass 340 indent level is 1 Making plural bipolar transistors of differing electrical characteristics
 [List of Pre Grant Publications for class 438 subclass 341][List of Patents for class 438 subclass 341]341 Subclass 341 indent level is 1 Using epitaxial lateral overgrowth
 [List of Pre Grant Publications for class 438 subclass 342][List of Patents for class 438 subclass 342]342 Subclass 342 indent level is 1 Having multiple emitter or collector structure
 [List of Pre Grant Publications for class 438 subclass 343][List of Patents for class 438 subclass 343]343 Subclass 343 indent level is 1 Mesa or stacked emitter
 [List of Pre Grant Publications for class 438 subclass 344][List of Patents for class 438 subclass 344]344 Subclass 344 indent level is 1 Washed emitter
 [List of Pre Grant Publications for class 438 subclass 345][List of Patents for class 438 subclass 345]345 Subclass 345 indent level is 1 Walled emitter
 [List of Pre Grant Publications for class 438 subclass 346][List of Patents for class 438 subclass 346]346 Subclass 346 indent level is 1 Emitter dip prevention or utilization
 [List of Pre Grant Publications for class 438 subclass 347][List of Patents for class 438 subclass 347]347 Subclass 347 indent level is 1 Permeable or metal base
 [List of Pre Grant Publications for class 438 subclass 348][List of Patents for class 438 subclass 348]348 Subclass 348 indent level is 1 Sidewall base contact
 [List of Pre Grant Publications for class 438 subclass 349][List of Patents for class 438 subclass 349]349 Subclass 349 indent level is 1 Pedestal base
 [List of Pre Grant Publications for class 438 subclass 350][List of Patents for class 438 subclass 350]350 Subclass 350 indent level is 1 Forming base region of specified dopant concentration profile (e.g., inactive base region more heavily doped than active base region, etc.)
 [List of Pre Grant Publications for class 438 subclass 351][List of Patents for class 438 subclass 351]351 Subclass 351 indent level is 1 Direct application of electrical current
 [List of Pre Grant Publications for class 438 subclass 352][List of Patents for class 438 subclass 352]352 Subclass 352 indent level is 1 Fusion or solidification of semiconductor region
[List of Pre Grant Publications for class 438 subclass 353][List of Patents for class 438 subclass 353]353 Subclass 353 indent level is 1 Including isolation structure
 [List of Pre Grant Publications for class 438 subclass 354][List of Patents for class 438 subclass 354]354 Subclass 354 indent level is 2 Having semi-insulative region
 [List of Pre Grant Publications for class 438 subclass 355][List of Patents for class 438 subclass 355]355 Subclass 355 indent level is 2 Total dielectrical isolation
[List of Pre Grant Publications for class 438 subclass 356][List of Patents for class 438 subclass 356]356 Subclass 356 indent level is 2 Isolation by PN junction only
[List of Pre Grant Publications for class 438 subclass 359][List of Patents for class 438 subclass 359]359 Subclass 359 indent level is 2 Dielectric isolation formed by grooving and refilling with dielectrical material
[List of Pre Grant Publications for class 438 subclass 362][List of Patents for class 438 subclass 362]362 Subclass 362 indent level is 2 Recessed oxide by localized oxidation (i.e., LOCOS)
[List of Pre Grant Publications for class 438 subclass 364][List of Patents for class 438 subclass 364]364 Subclass 364 indent level is 1 Self-aligned
[List of Pre Grant Publications for class 438 subclass 365][List of Patents for class 438 subclass 365]365 Subclass 365 indent level is 2 Forming active region from adjacent doped polycrystalline or amorphous semiconductor
[List of Pre Grant Publications for class 438 subclass 369][List of Patents for class 438 subclass 369]369 Subclass 369 indent level is 2 Dopant implantation or diffusion
 [List of Pre Grant Publications for class 438 subclass 378][List of Patents for class 438 subclass 378]378 Subclass 378 indent level is 1 Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)
 [List of Pre Grant Publications for class 438 subclass 379][List of Patents for class 438 subclass 379]379 VOLTAGE VARIABLE CAPACITANCE DEVICE MANUFACTURE (E.G., VARACTOR, ETC.)
 [List of Pre Grant Publications for class 438 subclass 380][List of Patents for class 438 subclass 380]380 AVALANCHE DIODE MANUFACTURE (E.G., IMPATT, TRAPPAT, ETC.)
[List of Pre Grant Publications for class 438 subclass 381][List of Patents for class 438 subclass 381]381 MAKING PASSIVE DEVICE (E.G., RESISTOR, CAPACITOR, ETC.)
[List of Pre Grant Publications for class 438 subclass 382][List of Patents for class 438 subclass 382]382 Subclass 382 indent level is 1 Resistor
 [List of Pre Grant Publications for class 438 subclass 383][List of Patents for class 438 subclass 383]383 Subclass 383 indent level is 2 Lightly doped junction isolated resistor
[List of Pre Grant Publications for class 438 subclass 384][List of Patents for class 438 subclass 384]384 Subclass 384 indent level is 2 Deposited thin film resistor
[List of Pre Grant Publications for class 438 subclass 386][List of Patents for class 438 subclass 386]386 Subclass 386 indent level is 1 Trench capacitor
 [List of Pre Grant Publications for class 438 subclass 387][List of Patents for class 438 subclass 387]387 Subclass 387 indent level is 2 Having stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)
 [List of Pre Grant Publications for class 438 subclass 388][List of Patents for class 438 subclass 388]388 Subclass 388 indent level is 2 With epitaxial layer formed over the trench
[List of Pre Grant Publications for class 438 subclass 389][List of Patents for class 438 subclass 389]389 Subclass 389 indent level is 2 Including doping of trench surfaces
[List of Pre Grant Publications for class 438 subclass 393][List of Patents for class 438 subclass 393]393 Subclass 393 indent level is 1 Planar capacitor
[List of Pre Grant Publications for class 438 subclass 394][List of Patents for class 438 subclass 394]394 Subclass 394 indent level is 2 Including doping of semiconductive region
[List of Pre Grant Publications for class 438 subclass 396][List of Patents for class 438 subclass 396]396 Subclass 396 indent level is 1 Stacked capacitor
 [List of Pre Grant Publications for class 438 subclass 397][List of Patents for class 438 subclass 397]397 Subclass 397 indent level is 2 Including selectively removing material to undercut and expose storage node layer
 [List of Pre Grant Publications for class 438 subclass 398][List of Patents for class 438 subclass 398]398 Subclass 398 indent level is 2 Including texturizing storage node layer
 [List of Pre Grant Publications for class 438 subclass 399][List of Patents for class 438 subclass 399]399 Subclass 399 indent level is 2 Having contacts formed by selective growth or deposition
[List of Pre Grant Publications for class 438 subclass 400][List of Patents for class 438 subclass 400]400 FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE
 [List of Pre Grant Publications for class 438 subclass 401][List of Patents for class 438 subclass 401]401 Subclass 401 indent level is 1 Having substrate registration feature (e.g., alignment mark)
 [List of Pre Grant Publications for class 438 subclass 402][List of Patents for class 438 subclass 402]402 Subclass 402 indent level is 1 And gettering of substrate
 [List of Pre Grant Publications for class 438 subclass 403][List of Patents for class 438 subclass 403]403 Subclass 403 indent level is 1 Having semi-insulating component
[List of Pre Grant Publications for class 438 subclass 404][List of Patents for class 438 subclass 404]404 Subclass 404 indent level is 1 Total dielectric isolation
 [List of Pre Grant Publications for class 438 subclass 405][List of Patents for class 438 subclass 405]405 Subclass 405 indent level is 2 And separate partially isolated semiconductor regions
 [List of Pre Grant Publications for class 438 subclass 406][List of Patents for class 438 subclass 406]406 Subclass 406 indent level is 2 Bonding of plural semiconductive substrates
 [List of Pre Grant Publications for class 438 subclass 407][List of Patents for class 438 subclass 407]407 Subclass 407 indent level is 2 Nondopant implantation
[List of Pre Grant Publications for class 438 subclass 408][List of Patents for class 438 subclass 408]408 Subclass 408 indent level is 2 With electrolytic treatment step
 [List of Pre Grant Publications for class 438 subclass 410][List of Patents for class 438 subclass 410]410 Subclass 410 indent level is 2 Encroachment of separate locally oxidized regions
[List of Pre Grant Publications for class 438 subclass 411][List of Patents for class 438 subclass 411]411 Subclass 411 indent level is 2 Air isolation (e.g., beam lead supported semiconductor islands, etc.)
 [List of Pre Grant Publications for class 438 subclass 413][List of Patents for class 438 subclass 413]413 Subclass 413 indent level is 2 With epitaxial semiconductor formation
[List of Pre Grant Publications for class 438 subclass 414][List of Patents for class 438 subclass 414]414 Subclass 414 indent level is 1 Isolation by PN junction only
 [List of Pre Grant Publications for class 438 subclass 415][List of Patents for class 438 subclass 415]415 Subclass 415 indent level is 2 Thermomigration
[List of Pre Grant Publications for class 438 subclass 416][List of Patents for class 438 subclass 416]416 Subclass 416 indent level is 2 With epitaxial semiconductor formation
 [List of Pre Grant Publications for class 438 subclass 420][List of Patents for class 438 subclass 420]420 Subclass 420 indent level is 2 Plural doping steps
[List of Pre Grant Publications for class 438 subclass 421][List of Patents for class 438 subclass 421]421 Subclass 421 indent level is 1 Having air-gap dielectric (e.g., groove, etc.)
 [List of Pre Grant Publications for class 438 subclass 422][List of Patents for class 438 subclass 422]422 Subclass 422 indent level is 2 Enclosed cavity
 [List of Pre Grant Publications for class 438 subclass 423][List of Patents for class 438 subclass 423]423 Subclass 423 indent level is 1 Implanting to form insulator
[List of Pre Grant Publications for class 438 subclass 424][List of Patents for class 438 subclass 424]424 Subclass 424 indent level is 1 Grooved and refilled with deposited dielectric material
[List of Pre Grant Publications for class 438 subclass 425][List of Patents for class 438 subclass 425]425 Subclass 425 indent level is 2 Combined with formation of recessed oxide by localized oxidation
[List of Pre Grant Publications for class 438 subclass 427][List of Patents for class 438 subclass 427]427 Subclass 427 indent level is 2 Refilling multiple grooves of different widths or depths
 [List of Pre Grant Publications for class 438 subclass 429][List of Patents for class 438 subclass 429]429 Subclass 429 indent level is 2 And epitaxial semiconductor formation in groove
[List of Pre Grant Publications for class 438 subclass 430][List of Patents for class 438 subclass 430]430 Subclass 430 indent level is 2 And deposition of polysilicon or noninsulative material into groove
[List of Pre Grant Publications for class 438 subclass 433][List of Patents for class 438 subclass 433]433 Subclass 433 indent level is 2 Dopant addition
[List of Pre Grant Publications for class 438 subclass 435][List of Patents for class 438 subclass 435]435 Subclass 435 indent level is 2 Multiple insulative layers in groove
 [List of Pre Grant Publications for class 438 subclass 438][List of Patents for class 438 subclass 438]438 Subclass 438 indent level is 2 Reflow of insulator
[List of Pre Grant Publications for class 438 subclass 439][List of Patents for class 438 subclass 439]439 Subclass 439 indent level is 1 Recessed oxide by localized oxidation (i.e., LOCOS)
 [List of Pre Grant Publications for class 438 subclass 440][List of Patents for class 438 subclass 440]440 Subclass 440 indent level is 2 Including nondopant implantation
 [List of Pre Grant Publications for class 438 subclass 441][List of Patents for class 438 subclass 441]441 Subclass 441 indent level is 2 With electrolytic treatment step
 [List of Pre Grant Publications for class 438 subclass 442][List of Patents for class 438 subclass 442]442 Subclass 442 indent level is 2 With epitaxial semiconductor layer formation
 [List of Pre Grant Publications for class 438 subclass 443][List of Patents for class 438 subclass 443]443 Subclass 443 indent level is 2 Etchback of recessed oxide
[List of Pre Grant Publications for class 438 subclass 444][List of Patents for class 438 subclass 444]444 Subclass 444 indent level is 2 Preliminary etching of groove
 [List of Pre Grant Publications for class 438 subclass 448][List of Patents for class 438 subclass 448]448 Subclass 448 indent level is 2 Utilizing oxidation mask having polysilicon component
[List of Pre Grant Publications for class 438 subclass 449][List of Patents for class 438 subclass 449]449 Subclass 449 indent level is 2 Dopant addition
 [List of Pre Grant Publications for class 438 subclass 452][List of Patents for class 438 subclass 452]452 Subclass 452 indent level is 2 Plural oxidation steps to form recessed oxide
 [List of Pre Grant Publications for class 438 subclass 453][List of Patents for class 438 subclass 453]453 Subclass 453 indent level is 2 And electrical conductor formation (i.e., metallization)
 [List of Pre Grant Publications for class 438 subclass 454][List of Patents for class 438 subclass 454]454 Subclass 454 indent level is 1 Field plate electrode
[List of Pre Grant Publications for class 438 subclass 455][List of Patents for class 438 subclass 455]455 BONDING OF PLURAL SEMICONDUCTOR SUBSTRATES
 [List of Pre Grant Publications for class 438 subclass 456][List of Patents for class 438 subclass 456]456 Subclass 456 indent level is 1 Having enclosed cavity
 [List of Pre Grant Publications for class 438 subclass 457][List of Patents for class 438 subclass 457]457 Subclass 457 indent level is 1 Warping of semiconductor substrate
 [List of Pre Grant Publications for class 438 subclass 458][List of Patents for class 438 subclass 458]458 Subclass 458 indent level is 1 Subsequent separation into plural bodies (e.g., delaminating, dicing, etc.)
 [List of Pre Grant Publications for class 438 subclass 459][List of Patents for class 438 subclass 459]459 Subclass 459 indent level is 1 Thinning of semiconductor substrate
[List of Pre Grant Publications for class 438 subclass 460][List of Patents for class 438 subclass 460]460 SEMICONDUCTOR SUBSTRATE DICING
 [List of Pre Grant Publications for class 438 subclass 461][List of Patents for class 438 subclass 461]461 Subclass 461 indent level is 1 Beam lead formation
 [List of Pre Grant Publications for class 438 subclass 462][List of Patents for class 438 subclass 462]462 Subclass 462 indent level is 1 Having specified scribe region structure (e.g., alignment mark, plural grooves, etc.)
 [List of Pre Grant Publications for class 438 subclass 463][List of Patents for class 438 subclass 463]463 Subclass 463 indent level is 1 By electromagnetic irradiation (e.g., electron, laser, etc.)
 [List of Pre Grant Publications for class 438 subclass 464][List of Patents for class 438 subclass 464]464 Subclass 464 indent level is 1 With attachment to temporary support or carrier
 [List of Pre Grant Publications for class 438 subclass 465][List of Patents for class 438 subclass 465]465 Subclass 465 indent level is 1 Having a perfecting coating
[List of Pre Grant Publications for class 438 subclass 466][List of Patents for class 438 subclass 466]466 DIRECT APPLICATION OF ELECTRICAL CURRENT
 [List of Pre Grant Publications for class 438 subclass 467][List of Patents for class 438 subclass 467]467 Subclass 467 indent level is 1 To alter conductivity of fuse or antifuse element
 [List of Pre Grant Publications for class 438 subclass 468][List of Patents for class 438 subclass 468]468 Subclass 468 indent level is 1 Electromigration
 [List of Pre Grant Publications for class 438 subclass 469][List of Patents for class 438 subclass 469]469 Subclass 469 indent level is 1 Utilizing pulsed current
 [List of Pre Grant Publications for class 438 subclass 470][List of Patents for class 438 subclass 470]470 Subclass 470 indent level is 1 Fusion of semiconductor region
[List of Pre Grant Publications for class 438 subclass 471][List of Patents for class 438 subclass 471]471 GETTERING OF SUBSTRATE
 [List of Pre Grant Publications for class 438 subclass 472][List of Patents for class 438 subclass 472]472 Subclass 472 indent level is 1 By vibrating or impacting
[List of Pre Grant Publications for class 438 subclass 473][List of Patents for class 438 subclass 473]473 Subclass 473 indent level is 1 By implanting or irradiating
[List of Pre Grant Publications for class 438 subclass 474][List of Patents for class 438 subclass 474]474 Subclass 474 indent level is 2 Ionized radiation (e.g., corpuscular or plasma treatment, etc.)
 [List of Pre Grant Publications for class 438 subclass 476][List of Patents for class 438 subclass 476]476 Subclass 476 indent level is 1 By layers which are coated, contacted, or diffused
 [List of Pre Grant Publications for class 438 subclass 477][List of Patents for class 438 subclass 477]477 Subclass 477 indent level is 1 By vapor phase surface reaction
[List of Pre Grant Publications for class 438 subclass 478][List of Patents for class 438 subclass 478]478 FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION)
[List of Pre Grant Publications for class 438 subclass 479][List of Patents for class 438 subclass 479]479 Subclass 479 indent level is 1 On insulating substrate or layer
 [List of Pre Grant Publications for class 438 subclass 480][List of Patents for class 438 subclass 480]480 Subclass 480 indent level is 2 Including implantation of ion which reacts with semiconductor substrate to form insulating layer
 [List of Pre Grant Publications for class 438 subclass 481][List of Patents for class 438 subclass 481]481 Subclass 481 indent level is 2 Utilizing epitaxial lateral overgrowth
[List of Pre Grant Publications for class 438 subclass 482][List of Patents for class 438 subclass 482]482 Subclass 482 indent level is 1 Amorphous semiconductor
 [List of Pre Grant Publications for class 438 subclass 483][List of Patents for class 438 subclass 483]483 Subclass 483 indent level is 2 Compound semiconductor
 [List of Pre Grant Publications for class 438 subclass 484][List of Patents for class 438 subclass 484]484 Subclass 484 indent level is 2 Running length (e.g., sheet, strip, etc.)
 [List of Pre Grant Publications for class 438 subclass 485][List of Patents for class 438 subclass 485]485 Subclass 485 indent level is 2 Deposition utilizing plasma (e.g., glow discharge, etc.)
[List of Pre Grant Publications for class 438 subclass 486][List of Patents for class 438 subclass 486]486 Subclass 486 indent level is 2 And subsequent crystallization
[List of Pre Grant Publications for class 438 subclass 488][List of Patents for class 438 subclass 488]488 Subclass 488 indent level is 1 Polycrystalline semiconductor
 [List of Pre Grant Publications for class 438 subclass 489][List of Patents for class 438 subclass 489]489 Subclass 489 indent level is 2 Simultaneous single crystal formation
 [List of Pre Grant Publications for class 438 subclass 490][List of Patents for class 438 subclass 490]490 Subclass 490 indent level is 2 Running length (e.g., sheet, strip, etc.)
 [List of Pre Grant Publications for class 438 subclass 491][List of Patents for class 438 subclass 491]491 Subclass 491 indent level is 2 And subsequent doping of polycrystalline semiconductor
 [List of Pre Grant Publications for class 438 subclass 492][List of Patents for class 438 subclass 492]492 Subclass 492 indent level is 1 Fluid growth step with preceding and subsequent diverse operation
[List of Pre Grant Publications for class 438 subclass 493][List of Patents for class 438 subclass 493]493 Subclass 493 indent level is 1 Plural fluid growth steps with intervening diverse operation
 [List of Pre Grant Publications for class 438 subclass 494][List of Patents for class 438 subclass 494]494 Subclass 494 indent level is 2 Differential etching
 [List of Pre Grant Publications for class 438 subclass 495][List of Patents for class 438 subclass 495]495 Subclass 495 indent level is 2 Doping of semiconductor
 [List of Pre Grant Publications for class 438 subclass 496][List of Patents for class 438 subclass 496]496 Subclass 496 indent level is 2 Coating of semiconductive substrate with nonsemiconductive material
[List of Pre Grant Publications for class 438 subclass 497][List of Patents for class 438 subclass 497]497 Subclass 497 indent level is 1 Fluid growth from liquid combined with preceding diverse operation
 [List of Pre Grant Publications for class 438 subclass 498][List of Patents for class 438 subclass 498]498 Subclass 498 indent level is 2 Differential etching
 [List of Pre Grant Publications for class 438 subclass 499][List of Patents for class 438 subclass 499]499 Subclass 499 indent level is 2 Doping of semiconductor
[List of Pre Grant Publications for class 438 subclass 500][List of Patents for class 438 subclass 500]500 Subclass 500 indent level is 1 Fluid growth from liquid combined with subsequent diverse operation
 [List of Pre Grant Publications for class 438 subclass 501][List of Patents for class 438 subclass 501]501 Subclass 501 indent level is 2 Doping of semiconductor
 [List of Pre Grant Publications for class 438 subclass 502][List of Patents for class 438 subclass 502]502 Subclass 502 indent level is 2 Heat treatment
[List of Pre Grant Publications for class 438 subclass 503][List of Patents for class 438 subclass 503]503 Subclass 503 indent level is 1 Fluid growth from gaseous state combined with preceding diverse operation
 [List of Pre Grant Publications for class 438 subclass 504][List of Patents for class 438 subclass 504]504 Subclass 504 indent level is 2 Differential etching
[List of Pre Grant Publications for class 438 subclass 505][List of Patents for class 438 subclass 505]505 Subclass 505 indent level is 2 Doping of semiconductor
[List of Pre Grant Publications for class 438 subclass 507][List of Patents for class 438 subclass 507]507 Subclass 507 indent level is 1 Fluid growth from gaseous state combined with subsequent diverse operation
 [List of Pre Grant Publications for class 438 subclass 508][List of Patents for class 438 subclass 508]508 Subclass 508 indent level is 2 Doping of semiconductor
 [List of Pre Grant Publications for class 438 subclass 509][List of Patents for class 438 subclass 509]509 Subclass 509 indent level is 2 Heat treatment
[List of Pre Grant Publications for class 438 subclass 510][List of Patents for class 438 subclass 510]510 INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL
 [List of Pre Grant Publications for class 438 subclass 511][List of Patents for class 438 subclass 511]511 Subclass 511 indent level is 1 Ordering or disordering
 [List of Pre Grant Publications for class 438 subclass 512][List of Patents for class 438 subclass 512]512 Subclass 512 indent level is 1 Involving nuclear transmutation doping
 [List of Pre Grant Publications for class 438 subclass 513][List of Patents for class 438 subclass 513]513 Subclass 513 indent level is 1 Plasma (e.g., glow discharge, etc.)
[List of Pre Grant Publications for class 438 subclass 514][List of Patents for class 438 subclass 514]514 Subclass 514 indent level is 1 Ion implantation of dopant into semiconductor region
 [List of Pre Grant Publications for class 438 subclass 515][List of Patents for class 438 subclass 515]515 Subclass 515 indent level is 2 Ionized molecules
 [List of Pre Grant Publications for class 438 subclass 516][List of Patents for class 438 subclass 516]516 Subclass 516 indent level is 2 Including charge neutralization
 [List of Pre Grant Publications for class 438 subclass 517][List of Patents for class 438 subclass 517]517 Subclass 517 indent level is 2 Of semiconductor layer on insulating substrate or layer
[List of Pre Grant Publications for class 438 subclass 518][List of Patents for class 438 subclass 518]518 Subclass 518 indent level is 2 Of compound semiconductor
 [List of Pre Grant Publications for class 438 subclass 524][List of Patents for class 438 subclass 524]524 Subclass 524 indent level is 2 Into grooved semiconductor substrate region
 [List of Pre Grant Publications for class 438 subclass 525][List of Patents for class 438 subclass 525]525 Subclass 525 indent level is 2 Using oblique beam
 [List of Pre Grant Publications for class 438 subclass 526][List of Patents for class 438 subclass 526]526 Subclass 526 indent level is 2 Forming buried region
[List of Pre Grant Publications for class 438 subclass 527][List of Patents for class 438 subclass 527]527 Subclass 527 indent level is 2 Including multiple implantation steps
 [List of Pre Grant Publications for class 438 subclass 530][List of Patents for class 438 subclass 530]530 Subclass 530 indent level is 2 Including heat treatment
 [List of Pre Grant Publications for class 438 subclass 531][List of Patents for class 438 subclass 531]531 Subclass 531 indent level is 2 Using shadow mask
 [List of Pre Grant Publications for class 438 subclass 532][List of Patents for class 438 subclass 532]532 Subclass 532 indent level is 2 Into polycrystalline region
[List of Pre Grant Publications for class 438 subclass 533][List of Patents for class 438 subclass 533]533 Subclass 533 indent level is 2 And contact formation (i.e., metallization)
[List of Pre Grant Publications for class 438 subclass 535][List of Patents for class 438 subclass 535]535 Subclass 535 indent level is 1 By application of corpuscular or electromagnetic radiation (e.g., electron, laser, etc.)
 [List of Pre Grant Publications for class 438 subclass 536][List of Patents for class 438 subclass 536]536 Subclass 536 indent level is 2 Recoil implantation
[List of Pre Grant Publications for class 438 subclass 537][List of Patents for class 438 subclass 537]537 Subclass 537 indent level is 1 Fusing dopant with substrate (i.e., alloy junction)
 [List of Pre Grant Publications for class 438 subclass 538][List of Patents for class 438 subclass 538]538 Subclass 538 indent level is 2 Using additional material to improve wettability or flow characteristics (e.g., flux, etc.)
 [List of Pre Grant Publications for class 438 subclass 539][List of Patents for class 438 subclass 539]539 Subclass 539 indent level is 2 Application of pressure to material during fusion
[List of Pre Grant Publications for class 438 subclass 540][List of Patents for class 438 subclass 540]540 Subclass 540 indent level is 2 Including plural controlled heating or cooling steps or nonuniform heating
[List of Pre Grant Publications for class 438 subclass 542][List of Patents for class 438 subclass 542]542 Subclass 542 indent level is 1 Diffusing a dopant
 [List of Pre Grant Publications for class 438 subclass 543][List of Patents for class 438 subclass 543]543 Subclass 543 indent level is 2 To control carrier lifetime (i.e., deep level dopant)
 [List of Pre Grant Publications for class 438 subclass 544][List of Patents for class 438 subclass 544]544 Subclass 544 indent level is 2 To solid-state solubility concentration
 [List of Pre Grant Publications for class 438 subclass 545][List of Patents for class 438 subclass 545]545 Subclass 545 indent level is 2 Forming partially overlapping regions
[List of Pre Grant Publications for class 438 subclass 546][List of Patents for class 438 subclass 546]546 Subclass 546 indent level is 2 Plural dopants in same region (e.g., through same mask opening, etc.)
 [List of Pre Grant Publications for class 438 subclass 548][List of Patents for class 438 subclass 548]548 Subclass 548 indent level is 2 Plural dopants simultaneously in plural regions
 [List of Pre Grant Publications for class 438 subclass 549][List of Patents for class 438 subclass 549]549 Subclass 549 indent level is 2 Single dopant forming plural diverse regions (e.g., forming regions of different concentrations or of different depths, etc.)
 [List of Pre Grant Publications for class 438 subclass 550][List of Patents for class 438 subclass 550]550 Subclass 550 indent level is 2 Nonuniform heating
[List of Pre Grant Publications for class 438 subclass 551][List of Patents for class 438 subclass 551]551 Subclass 551 indent level is 2 Using multiple layered mask
 [List of Pre Grant Publications for class 438 subclass 553][List of Patents for class 438 subclass 553]553 Subclass 553 indent level is 2 Using metal mask
 [List of Pre Grant Publications for class 438 subclass 554][List of Patents for class 438 subclass 554]554 Subclass 554 indent level is 2 Outwardly
 [List of Pre Grant Publications for class 438 subclass 555][List of Patents for class 438 subclass 555]555 Subclass 555 indent level is 2 Laterally under mask opening
 [List of Pre Grant Publications for class 438 subclass 556][List of Patents for class 438 subclass 556]556 Subclass 556 indent level is 2 Edge diffusion by using edge portion of structure other than masking layer to mask
 [List of Pre Grant Publications for class 438 subclass 557][List of Patents for class 438 subclass 557]557 Subclass 557 indent level is 2 From melt
[List of Pre Grant Publications for class 438 subclass 558][List of Patents for class 438 subclass 558]558 Subclass 558 indent level is 2 From solid dopant source in contact with semiconductor region
[List of Pre Grant Publications for class 438 subclass 565][List of Patents for class 438 subclass 565]565 Subclass 565 indent level is 2 From vapor phase
[List of Pre Grant Publications for class 438 subclass 570][List of Patents for class 438 subclass 570]570 FORMING SCHOTTKY JUNCTION (I.E., SEMICONDUCTOR-CONDUCTOR RECTIFYING JUNCTION CONTACT)
 [List of Pre Grant Publications for class 438 subclass 571][List of Patents for class 438 subclass 571]571 Subclass 571 indent level is 1 Combined with formation of ohmic contact to semiconductor region
[List of Pre Grant Publications for class 438 subclass 572][List of Patents for class 438 subclass 572]572 Subclass 572 indent level is 1 Compound semiconductor
[List of Pre Grant Publications for class 438 subclass 573][List of Patents for class 438 subclass 573]573 Subclass 573 indent level is 2 Multilayer electrode
[List of Pre Grant Publications for class 438 subclass 576][List of Patents for class 438 subclass 576]576 Subclass 576 indent level is 2 Into grooved or recessed semiconductor region
[List of Pre Grant Publications for class 438 subclass 580][List of Patents for class 438 subclass 580]580 Subclass 580 indent level is 1 Using platinum group metal (i.e., platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)
 [List of Pre Grant Publications for class 438 subclass 581][List of Patents for class 438 subclass 581]581 Subclass 581 indent level is 2 Silicide
[List of Pre Grant Publications for class 438 subclass 582][List of Patents for class 438 subclass 582]582 Subclass 582 indent level is 1 Using refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
 [List of Pre Grant Publications for class 438 subclass 583][List of Patents for class 438 subclass 583]583 Subclass 583 indent level is 2 Silicide
[List of Pre Grant Publications for class 438 subclass 584][List of Patents for class 438 subclass 584]584 COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL
[List of Pre Grant Publications for class 438 subclass 585][List of Patents for class 438 subclass 585]585 Subclass 585 indent level is 1 Insulated gate formation
 [List of Pre Grant Publications for class 438 subclass 586][List of Patents for class 438 subclass 586]586 Subclass 586 indent level is 2 Combined with formation of ohmic contact to semiconductor region
[List of Pre Grant Publications for class 438 subclass 587][List of Patents for class 438 subclass 587]587 Subclass 587 indent level is 2 Forming array of gate electrodes
 [List of Pre Grant Publications for class 438 subclass 589][List of Patents for class 438 subclass 589]589 Subclass 589 indent level is 2 Recessed into semiconductor substrate
 [List of Pre Grant Publications for class 438 subclass 590][List of Patents for class 438 subclass 590]590 Subclass 590 indent level is 2 Compound semiconductor
 [List of Pre Grant Publications for class 438 subclass 591][List of Patents for class 438 subclass 591]591 Subclass 591 indent level is 2 Gate insulator structure constructed of plural layers or nonsilicon containing compound
[List of Pre Grant Publications for class 438 subclass 592][List of Patents for class 438 subclass 592]592 Subclass 592 indent level is 2 Possessing plural conductive layers (e.g., polycide)
[List of Pre Grant Publications for class 438 subclass 595][List of Patents for class 438 subclass 595]595 Subclass 595 indent level is 2 Having sidewall structure
[List of Pre Grant Publications for class 438 subclass 597][List of Patents for class 438 subclass 597]597 Subclass 597 indent level is 1 To form ohmic contact to semiconductive material
[List of Pre Grant Publications for class 438 subclass 598][List of Patents for class 438 subclass 598]598 Subclass 598 indent level is 2 Selectively interconnecting (e.g., customization, wafer scale integration, etc.)
[List of Pre Grant Publications for class 438 subclass 602][List of Patents for class 438 subclass 602]602 Subclass 602 indent level is 2 To compound semiconductor
 [List of Pre Grant Publications for class 438 subclass 607][List of Patents for class 438 subclass 607]607 Subclass 607 indent level is 2 With epitaxial conductor formation
[List of Pre Grant Publications for class 438 subclass 608][List of Patents for class 438 subclass 608]608 Subclass 608 indent level is 2 Oxidic conductor (e.g., indium tin oxide, etc.)
 [List of Pre Grant Publications for class 438 subclass 610][List of Patents for class 438 subclass 610]610 Subclass 610 indent level is 2 Conductive macromolecular conductor (including metal powder filled composition)
 [List of Pre Grant Publications for class 438 subclass 611][List of Patents for class 438 subclass 611]611 Subclass 611 indent level is 2 Beam lead formation
[List of Pre Grant Publications for class 438 subclass 612][List of Patents for class 438 subclass 612]612 Subclass 612 indent level is 2 Forming solder contact or bonding pad
[List of Pre Grant Publications for class 438 subclass 618][List of Patents for class 438 subclass 618]618 Subclass 618 indent level is 2 Contacting multiple semiconductive regions (i.e., interconnects)
 [List of Pre Grant Publications for class 438 subclass 619][List of Patents for class 438 subclass 619]619 Subclass 619 indent level is 3 Air bridge structure
 [List of Pre Grant Publications for class 438 subclass 620][List of Patents for class 438 subclass 620]620 Subclass 620 indent level is 3 Forming contacts of differing depths into semiconductor substrate
 [List of Pre Grant Publications for class 438 subclass 621][List of Patents for class 438 subclass 621]621 Subclass 621 indent level is 3 Contacting diversely doped semiconductive regions (e.g., p-type and n-type regions, etc.)
[List of Pre Grant Publications for class 438 subclass 622][List of Patents for class 438 subclass 622]622 Subclass 622 indent level is 3 Multiple metal levels, separated by insulating layer (i.e., multiple level metallization)
[List of Pre Grant Publications for class 438 subclass 642][List of Patents for class 438 subclass 642]642 Subclass 642 indent level is 3 Diverse conductors
[List of Pre Grant Publications for class 438 subclass 652][List of Patents for class 438 subclass 652]652 Subclass 652 indent level is 2 Plural layered electrode or conductor
[List of Pre Grant Publications for class 438 subclass 658][List of Patents for class 438 subclass 658]658 Subclass 658 indent level is 2 Altering composition of conductor
[List of Pre Grant Publications for class 438 subclass 660][List of Patents for class 438 subclass 660]660 Subclass 660 indent level is 2 Including heat treatment of conductive layer
 [List of Pre Grant Publications for class 438 subclass 665][List of Patents for class 438 subclass 665]665 Subclass 665 indent level is 2 Utilizing textured surface
[List of Pre Grant Publications for class 438 subclass 666][List of Patents for class 438 subclass 666]666 Subclass 666 indent level is 2 Specified configuration of electrode or contact
[List of Pre Grant Publications for class 438 subclass 669][List of Patents for class 438 subclass 669]669 Subclass 669 indent level is 2 And patterning of conductive layer
[List of Pre Grant Publications for class 438 subclass 674][List of Patents for class 438 subclass 674]674 Subclass 674 indent level is 2 Selective deposition of conductive layer
 [List of Pre Grant Publications for class 438 subclass 678][List of Patents for class 438 subclass 678]678 Subclass 678 indent level is 2 Electroless deposition of conductive layer
 [List of Pre Grant Publications for class 438 subclass 679][List of Patents for class 438 subclass 679]679 Subclass 679 indent level is 2 Evaporative coating of conductive layer
[List of Pre Grant Publications for class 438 subclass 680][List of Patents for class 438 subclass 680]680 Subclass 680 indent level is 2 Utilizing chemical vapor deposition (i.e., CVD)
[List of Pre Grant Publications for class 438 subclass 682][List of Patents for class 438 subclass 682]682 Subclass 682 indent level is 2 Silicide
 [List of Pre Grant Publications for class 438 subclass 684][List of Patents for class 438 subclass 684]684 Subclass 684 indent level is 2 Electrically conductive polysilicon
 [List of Pre Grant Publications for class 438 subclass 685][List of Patents for class 438 subclass 685]685 Subclass 685 indent level is 2 Refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
 [List of Pre Grant Publications for class 438 subclass 686][List of Patents for class 438 subclass 686]686 Subclass 686 indent level is 2 Noble group metal (i.e., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)
 [List of Pre Grant Publications for class 438 subclass 687][List of Patents for class 438 subclass 687]687 Subclass 687 indent level is 2 Copper of copper alloy conductor
 [List of Pre Grant Publications for class 438 subclass 688][List of Patents for class 438 subclass 688]688 Subclass 688 indent level is 2 Aluminum or aluminum alloy conductor
[List of Pre Grant Publications for class 438 subclass 689][List of Patents for class 438 subclass 689]689 CHEMICAL ETCHING
[List of Pre Grant Publications for class 438 subclass 690][List of Patents for class 438 subclass 690]690 Subclass 690 indent level is 1 Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.)
[List of Pre Grant Publications for class 438 subclass 691][List of Patents for class 438 subclass 691]691 Subclass 691 indent level is 2 Combined mechanical and chemical material removal
[List of Pre Grant Publications for class 438 subclass 694][List of Patents for class 438 subclass 694]694 Subclass 694 indent level is 1 Combined with coating step
 [List of Pre Grant Publications for class 438 subclass 695][List of Patents for class 438 subclass 695]695 Subclass 695 indent level is 2 Simultaneous etching and coating
 [List of Pre Grant Publications for class 438 subclass 696][List of Patents for class 438 subclass 696]696 Subclass 696 indent level is 2 Coating of sidewall
[List of Pre Grant Publications for class 438 subclass 697][List of Patents for class 438 subclass 697]697 Subclass 697 indent level is 2 Planarization by etching and coating
[List of Pre Grant Publications for class 438 subclass 700][List of Patents for class 438 subclass 700]700 Subclass 700 indent level is 2 Formation of groove or trench
 [List of Pre Grant Publications for class 438 subclass 703][List of Patents for class 438 subclass 703]703 Subclass 703 indent level is 2 Plural coating steps
 [List of Pre Grant Publications for class 438 subclass 704][List of Patents for class 438 subclass 704]704 Subclass 704 indent level is 1 Having liquid and vapor etching steps
 [List of Pre Grant Publications for class 438 subclass 705][List of Patents for class 438 subclass 705]705 Subclass 705 indent level is 1 Altering etchability of substrate region by compositional or crystalline modification
[List of Pre Grant Publications for class 438 subclass 706][List of Patents for class 438 subclass 706]706 Subclass 706 indent level is 1 Vapor phase etching (i.e., dry etching)
[List of Pre Grant Publications for class 438 subclass 707][List of Patents for class 438 subclass 707]707 Subclass 707 indent level is 2 Utilizing electromagnetic or wave energy
 [List of Pre Grant Publications for class 438 subclass 734][List of Patents for class 438 subclass 734]734 Subclass 734 indent level is 2 Sequential etching steps on a single layer
[List of Pre Grant Publications for class 438 subclass 735][List of Patents for class 438 subclass 735]735 Subclass 735 indent level is 2 Differential etching of semiconductor substrate
[List of Pre Grant Publications for class 438 subclass 745][List of Patents for class 438 subclass 745]745 Subclass 745 indent level is 1 Liquid phase etching
 [List of Pre Grant Publications for class 438 subclass 746][List of Patents for class 438 subclass 746]746 Subclass 746 indent level is 2 Utilizing electromagnetic or wave energy
 [List of Pre Grant Publications for class 438 subclass 747][List of Patents for class 438 subclass 747]747 Subclass 747 indent level is 2 With relative movement between substrate and confined pool of etchant
 [List of Pre Grant Publications for class 438 subclass 748][List of Patents for class 438 subclass 748]748 Subclass 748 indent level is 2 Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant
[List of Pre Grant Publications for class 438 subclass 749][List of Patents for class 438 subclass 749]749 Subclass 749 indent level is 2 Sequential application of etchant
 [List of Pre Grant Publications for class 438 subclass 752][List of Patents for class 438 subclass 752]752 Subclass 752 indent level is 2 Germanium
 [List of Pre Grant Publications for class 438 subclass 753][List of Patents for class 438 subclass 753]753 Subclass 753 indent level is 2 Silicon
[List of Pre Grant Publications for class 438 subclass 754][List of Patents for class 438 subclass 754]754 Subclass 754 indent level is 2 Electrically conductive material (e.g., metal, conductive oxide, etc.)
 [List of Pre Grant Publications for class 438 subclass 756][List of Patents for class 438 subclass 756]756 Subclass 756 indent level is 2 Silicon oxide
 [List of Pre Grant Publications for class 438 subclass 757][List of Patents for class 438 subclass 757]757 Subclass 757 indent level is 2 Silicon nitride
[List of Pre Grant Publications for class 438 subclass 758][List of Patents for class 438 subclass 758]758 COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE
 [List of Pre Grant Publications for class 438 subclass 759][List of Patents for class 438 subclass 759]759 Subclass 759 indent level is 1 Combined with the removal of material by nonchemical means
 [List of Pre Grant Publications for class 438 subclass 760][List of Patents for class 438 subclass 760]760 Subclass 760 indent level is 1 Utilizing reflow (e.g., planarization, etc.)
[List of Pre Grant Publications for class 438 subclass 761][List of Patents for class 438 subclass 761]761 Subclass 761 indent level is 1 Multiple layers
 [List of Pre Grant Publications for class 438 subclass 762][List of Patents for class 438 subclass 762]762 Subclass 762 indent level is 2 At least one layer formed by reaction with substrate
 [List of Pre Grant Publications for class 438 subclass 763][List of Patents for class 438 subclass 763]763 Subclass 763 indent level is 2 Layers formed of diverse composition or by diverse coating processes
 [List of Pre Grant Publications for class 438 subclass 764][List of Patents for class 438 subclass 764]764 Subclass 764 indent level is 1 Formation of semi-insulative polycrystalline silicon
[List of Pre Grant Publications for class 438 subclass 765][List of Patents for class 438 subclass 765]765 Subclass 765 indent level is 1 By reaction with substrate
 [List of Pre Grant Publications for class 438 subclass 766][List of Patents for class 438 subclass 766]766 Subclass 766 indent level is 2 Implantation of ion (e.g., to form ion amorphousized region prior to selective oxidation, reacting with substrate to form insulative region, etc.)
 [List of Pre Grant Publications for class 438 subclass 767][List of Patents for class 438 subclass 767]767 Subclass 767 indent level is 2 Compound semiconductor substrate
 [List of Pre Grant Publications for class 438 subclass 768][List of Patents for class 438 subclass 768]768 Subclass 768 indent level is 2 Reaction with conductive region
[List of Pre Grant Publications for class 438 subclass 769][List of Patents for class 438 subclass 769]769 Subclass 769 indent level is 2 Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.)
[List of Pre Grant Publications for class 438 subclass 778][List of Patents for class 438 subclass 778]778 Subclass 778 indent level is 1 Insulative material deposited upon semiconductive substrate
 [List of Pre Grant Publications for class 438 subclass 779][List of Patents for class 438 subclass 779]779 Subclass 779 indent level is 2 Compound semiconductor substrate
[List of Pre Grant Publications for class 438 subclass 780][List of Patents for class 438 subclass 780]780 Subclass 780 indent level is 2 Depositing organic material (e.g., polymer, etc.)
 [List of Pre Grant Publications for class 438 subclass 782][List of Patents for class 438 subclass 782]782 Subclass 782 indent level is 2 With substrate handling during coating (e.g., immersion, spinning, etc.)
[List of Pre Grant Publications for class 438 subclass 783][List of Patents for class 438 subclass 783]783 Subclass 783 indent level is 2 Insulative material having impurity (e.g., for altering physical characteristics, etc.)
 [List of Pre Grant Publications for class 438 subclass 785][List of Patents for class 438 subclass 785]785 Subclass 785 indent level is 2 Insulative material is compound of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)
 [List of Pre Grant Publications for class 438 subclass 786][List of Patents for class 438 subclass 786]786 Subclass 786 indent level is 2 Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.)
[List of Pre Grant Publications for class 438 subclass 787][List of Patents for class 438 subclass 787]787 Subclass 787 indent level is 2 Silicon oxide formation
[List of Pre Grant Publications for class 438 subclass 791][List of Patents for class 438 subclass 791]791 Subclass 791 indent level is 2 Silicon nitride formation
[List of Pre Grant Publications for class 438 subclass 795][List of Patents for class 438 subclass 795]795 RADIATION OR ENERGY TREATMENT MODIFYING PROPERTIES OF SEMICONDUCTOR REGION OF SUBSTRATE (E.G., THERMAL, CORPUSCULAR, ELECTROMAGNETIC, ETC.)
[List of Pre Grant Publications for class 438 subclass 796][List of Patents for class 438 subclass 796]796 Subclass 796 indent level is 1 Compound semiconductor
 [List of Pre Grant Publications for class 438 subclass 797][List of Patents for class 438 subclass 797]797 Subclass 797 indent level is 2 Ordering or disordering
 [List of Pre Grant Publications for class 438 subclass 798][List of Patents for class 438 subclass 798]798 Subclass 798 indent level is 1 Ionized irradiation (e.g., corpuscular or plasma treatment, etc.)
 [List of Pre Grant Publications for class 438 subclass 799][List of Patents for class 438 subclass 799]799 Subclass 799 indent level is 1 By differential heating
 [List of Pre Grant Publications for class 438 subclass 800][List of Patents for class 438 subclass 800]800 MISCELLANEOUS
 
CROSS-REFERENCE ART COLLECTIONS
 
 [List of Pre Grant Publications for class 438 subclass 900][List of Patents for class 438 subclass 900]900 BULK EFFECT DEVICE MAKING
 [List of Pre Grant Publications for class 438 subclass 901][List of Patents for class 438 subclass 901]901 CAPACITIVE JUNCTION
 [List of Pre Grant Publications for class 438 subclass 902][List of Patents for class 438 subclass 902]902 CAPPING LAYER
 [List of Pre Grant Publications for class 438 subclass 903][List of Patents for class 438 subclass 903]903 CATALYST AIDED DEPOSITION
 [List of Pre Grant Publications for class 438 subclass 904][List of Patents for class 438 subclass 904]904 CHARGE CARRIER LIFETIME CONTROL
 [List of Pre Grant Publications for class 438 subclass 905][List of Patents for class 438 subclass 905]905 CLEANING OF REACTION CHAMBER
 [List of Pre Grant Publications for class 438 subclass 906][List of Patents for class 438 subclass 906]906 CLEANING OF WAFER AS INTERIM STEP
[List of Pre Grant Publications for class 438 subclass 907][List of Patents for class 438 subclass 907]907 CONTINUOUS PROCESSING
 [List of Pre Grant Publications for class 438 subclass 908][List of Patents for class 438 subclass 908]908 Subclass 908 indent level is 1 Utilizing cluster apparatus
 [List of Pre Grant Publications for class 438 subclass 909][List of Patents for class 438 subclass 909]909 CONTROLLED ATMOSPHERE
 [List of Pre Grant Publications for class 438 subclass 910][List of Patents for class 438 subclass 910]910 CONTROLLING CHARGING STATE AT SEMICONDUCTOR-INSULATOR INTERFACE
 [List of Pre Grant Publications for class 438 subclass 911][List of Patents for class 438 subclass 911]911 DIFFERENTIAL OXIDATION AND ETCHING
 [List of Pre Grant Publications for class 438 subclass 912][List of Patents for class 438 subclass 912]912 DISPLACING PN JUNCTION
 [List of Pre Grant Publications for class 438 subclass 913][List of Patents for class 438 subclass 913]913 DIVERSE TREATMENTS PERFORMED IN UNITARY CHAMBER
[List of Pre Grant Publications for class 438 subclass 914][List of Patents for class 438 subclass 914]914 DOPING
 [List of Pre Grant Publications for class 438 subclass 915][List of Patents for class 438 subclass 915]915 Subclass 915 indent level is 1 Amphoteric doping
 [List of Pre Grant Publications for class 438 subclass 916][List of Patents for class 438 subclass 916]916 Subclass 916 indent level is 1 Autodoping control or utilization
 [List of Pre Grant Publications for class 438 subclass 917][List of Patents for class 438 subclass 917]917 Subclass 917 indent level is 1 Deep level dopants (e.g., gold (Au), chromium (Cr), iron (Fe), nickel (Ni), etc.)
 [List of Pre Grant Publications for class 438 subclass 918][List of Patents for class 438 subclass 918]918 Subclass 918 indent level is 1 Special or nonstandard dopant
 [List of Pre Grant Publications for class 438 subclass 919][List of Patents for class 438 subclass 919]919 Subclass 919 indent level is 1 Compensation doping
 [List of Pre Grant Publications for class 438 subclass 920][List of Patents for class 438 subclass 920]920 Subclass 920 indent level is 1 Controlling diffusion profile by oxidation
 [List of Pre Grant Publications for class 438 subclass 921][List of Patents for class 438 subclass 921]921 Subclass 921 indent level is 1 Nonselective diffusion
 [List of Pre Grant Publications for class 438 subclass 922][List of Patents for class 438 subclass 922]922 Subclass 922 indent level is 1 Diffusion along grain boundaries
 [List of Pre Grant Publications for class 438 subclass 923][List of Patents for class 438 subclass 923]923 Subclass 923 indent level is 1 Diffusion through a layer
 [List of Pre Grant Publications for class 438 subclass 924][List of Patents for class 438 subclass 924]924 Subclass 924 indent level is 1 To facilitate selective etching
 [List of Pre Grant Publications for class 438 subclass 925][List of Patents for class 438 subclass 925]925 Subclass 925 indent level is 1 Fluid growth doping control (e.g., delta doping, etc.)
 [List of Pre Grant Publications for class 438 subclass 926][List of Patents for class 438 subclass 926]926 DUMMY METALLIZATION
 [List of Pre Grant Publications for class 438 subclass 927][List of Patents for class 438 subclass 927]927 ELECTROMIGRATION RESISTANT METALLIZATION
 [List of Pre Grant Publications for class 438 subclass 928][List of Patents for class 438 subclass 928]928 FRONT AND REAR SURFACE PROCESSING
 [List of Pre Grant Publications for class 438 subclass 929][List of Patents for class 438 subclass 929]929 EUTECTIC SEMICONDUCTOR
 [List of Pre Grant Publications for class 438 subclass 930][List of Patents for class 438 subclass 930]930 TERNARY OR QUATERNARY SEMICONDUCTOR COMPRISED OF ELEMENTS FROM THREE DIFFERENT GROUPS (E.G., I-III-V, ETC.)
 [List of Pre Grant Publications for class 438 subclass 931][List of Patents for class 438 subclass 931]931 SILICON CARBIDE SEMICONDUCTOR
 [List of Pre Grant Publications for class 438 subclass 932][List of Patents for class 438 subclass 932]932 BORON NITRIDE SEMICONDUCTOR
 [List of Pre Grant Publications for class 438 subclass 933][List of Patents for class 438 subclass 933]933 GERMANIUM OR SILICON OR GE-SI ON III-V
 [List of Pre Grant Publications for class 438 subclass 934][List of Patents for class 438 subclass 934]934 SHEET RESISTANCE (I.E., DOPANT PARAMETERS)
 [List of Pre Grant Publications for class 438 subclass 935][List of Patents for class 438 subclass 935]935 GAS FLOW CONTROL
 [List of Pre Grant Publications for class 438 subclass 936][List of Patents for class 438 subclass 936]936 GRADED ENERGY GAP
 [List of Pre Grant Publications for class 438 subclass 937][List of Patents for class 438 subclass 937]937 HILLOCK PREVENTION
 [List of Pre Grant Publications for class 438 subclass 938][List of Patents for class 438 subclass 938]938 LATTICE STRAIN CONTROL OR UTILIZATION
 [List of Pre Grant Publications for class 438 subclass 939][List of Patents for class 438 subclass 939]939 LANGMUIR-BLODGETT FILM UTILIZATION
 [List of Pre Grant Publications for class 438 subclass 940][List of Patents for class 438 subclass 940]940 LASER ABLATIVE MATERIAL REMOVAL
 [List of Pre Grant Publications for class 438 subclass 941][List of Patents for class 438 subclass 941]941 LOADING EFFECT MITIGATION
[List of Pre Grant Publications for class 438 subclass 942][List of Patents for class 438 subclass 942]942 MASKING
 [List of Pre Grant Publications for class 438 subclass 943][List of Patents for class 438 subclass 943]943 Subclass 943 indent level is 1 Movable
 [List of Pre Grant Publications for class 438 subclass 944][List of Patents for class 438 subclass 944]944 Subclass 944 indent level is 1 Shadow
 [List of Pre Grant Publications for class 438 subclass 945][List of Patents for class 438 subclass 945]945 Subclass 945 indent level is 1 Special (e.g., metal, etc.)
 [List of Pre Grant Publications for class 438 subclass 946][List of Patents for class 438 subclass 946]946 Subclass 946 indent level is 1 Step and repeat
 [List of Pre Grant Publications for class 438 subclass 947][List of Patents for class 438 subclass 947]947 Subclass 947 indent level is 1 Subphotolithographic processing
[List of Pre Grant Publications for class 438 subclass 948][List of Patents for class 438 subclass 948]948 Subclass 948 indent level is 1 Radiation resist
 [List of Pre Grant Publications for class 438 subclass 949][List of Patents for class 438 subclass 949]949 Subclass 949 indent level is 2 Energy beam treating radiation resist on semiconductor
 [List of Pre Grant Publications for class 438 subclass 950][List of Patents for class 438 subclass 950]950 Subclass 950 indent level is 2 Multilayer mask including nonradiation sensitive layer
 [List of Pre Grant Publications for class 438 subclass 951][List of Patents for class 438 subclass 951]951 Subclass 951 indent level is 2 Lift-off
 [List of Pre Grant Publications for class 438 subclass 952][List of Patents for class 438 subclass 952]952 Subclass 952 indent level is 2 Utilizing antireflective layer
 [List of Pre Grant Publications for class 438 subclass 953][List of Patents for class 438 subclass 953]953 MAKING RADIATION RESISTANT DEVICE
 [List of Pre Grant Publications for class 438 subclass 954][List of Patents for class 438 subclass 954]954 MAKING OXIDE-NITRIDE-OXIDE DEVICE
 [List of Pre Grant Publications for class 438 subclass 955][List of Patents for class 438 subclass 955]955 MELT-BACK
 [List of Pre Grant Publications for class 438 subclass 956][List of Patents for class 438 subclass 956]956 MAKING MULTIPLE WAVELENGTH EMISSIVE DEVICE
 [List of Pre Grant Publications for class 438 subclass 957][List of Patents for class 438 subclass 957]957 MAKING METAL-INSULATOR-METAL DEVICE
 [List of Pre Grant Publications for class 438 subclass 958][List of Patents for class 438 subclass 958]958 PASSIVATION LAYER
 [List of Pre Grant Publications for class 438 subclass 959][List of Patents for class 438 subclass 959]959 MECHANICAL POLISHING OF WAFER
 [List of Pre Grant Publications for class 438 subclass 960][List of Patents for class 438 subclass 960]960 POROUS SEMICONDUCTOR
 [List of Pre Grant Publications for class 438 subclass 961][List of Patents for class 438 subclass 961]961 ION BEAM SOURCE AND GENERATION
 [List of Pre Grant Publications for class 438 subclass 962][List of Patents for class 438 subclass 962]962 QUANTUM DOTS AND LINES
 [List of Pre Grant Publications for class 438 subclass 963][List of Patents for class 438 subclass 963]963 REMOVING PROCESS RESIDUES FROM VERTICAL SUBSTRATE SURFACES
 [List of Pre Grant Publications for class 438 subclass 964][List of Patents for class 438 subclass 964]964 ROUGHENED SURFACE
 [List of Pre Grant Publications for class 438 subclass 965][List of Patents for class 438 subclass 965]965 SHAPED JUNCTION FORMATION
 [List of Pre Grant Publications for class 438 subclass 966][List of Patents for class 438 subclass 966]966 SELECTIVE OXIDATION OF ION-AMORPHOUSIZED LAYER
 [List of Pre Grant Publications for class 438 subclass 967][List of Patents for class 438 subclass 967]967 SEMICONDUCTOR ON SPECIFIED INSULATOR
 [List of Pre Grant Publications for class 438 subclass 968][List of Patents for class 438 subclass 968]968 SEMICONDUCTOR-METAL-SEMICONDUCTOR
 [List of Pre Grant Publications for class 438 subclass 969][List of Patents for class 438 subclass 969]969 SIMULTANEOUS FORMATION OF MONOCRYSTALLINE AND POLYCRYSTALLINE REGIONS
 [List of Pre Grant Publications for class 438 subclass 970][List of Patents for class 438 subclass 970]970 SPECIFIED ETCH STOP MATERIAL
 [List of Pre Grant Publications for class 438 subclass 971][List of Patents for class 438 subclass 971]971 STOICHIOMETRIC CONTROL OF HOST SUBSTRATE COMPOSITION
 [List of Pre Grant Publications for class 438 subclass 972][List of Patents for class 438 subclass 972]972 STORED CHARGE ERASURE
 [List of Pre Grant Publications for class 438 subclass 973][List of Patents for class 438 subclass 973]973 SUBSTRATE ORIENTATION
 [List of Pre Grant Publications for class 438 subclass 974][List of Patents for class 438 subclass 974]974 SUBSTRATE SURFACE PREPARATION
 [List of Pre Grant Publications for class 438 subclass 975][List of Patents for class 438 subclass 975]975 SUBSTRATE OR MASK ALIGNING FEATURE
 [List of Pre Grant Publications for class 438 subclass 976][List of Patents for class 438 subclass 976]976 TEMPORARY PROTECTIVE LAYER
 [List of Pre Grant Publications for class 438 subclass 977][List of Patents for class 438 subclass 977]977 THINNING OR REMOVAL OF SUBSTRATE
 [List of Pre Grant Publications for class 438 subclass 978][List of Patents for class 438 subclass 978]978 FORMING TAPERED EDGES ON SUBSTRATE OR ADJACENT LAYERS
 [List of Pre Grant Publications for class 438 subclass 979][List of Patents for class 438 subclass 979]979 TUNNEL DIODES
 [List of Pre Grant Publications for class 438 subclass 980][List of Patents for class 438 subclass 980]980 UTILIZING PROCESS EQUIVALENTS OR OPTIONS
 [List of Pre Grant Publications for class 438 subclass 981][List of Patents for class 438 subclass 981]981 UTILIZING VARYING DIELECTRIC THICKNESS
 [List of Pre Grant Publications for class 438 subclass 982][List of Patents for class 438 subclass 982]982 VARYING ORIENTATION OF DEVICES IN ARRAY
 [List of Pre Grant Publications for class 438 subclass 983][List of Patents for class 438 subclass 983]983 ZENER DIODES
 
FOREIGN ART COLLECTIONS
 
      FOR000          CLASS-RELATED FOREIGN DOCUMENTS
Any foreign patents or non-patent literature from subclasses that have been reclassified have been transferred directly to FOR Collections listed below. These Collections contain ONLY foreign patents or non-patent literature. The parenthetical references in the Collection titles refer to the abolished subclasses from which these Collections were derived.
     METHODS (156/1)
  FOR100          Subclass FOR100 indent level is 1 Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1)
  FOR101          Subclass FOR101 indent level is 2 Measuring, testing, or inspecting (156/626.1)
      FOR103          Subclass FOR103 indent level is 2 Altering the etchability of a substrate by alloying, diffusing, or chemical reacting (156/628.1)
  FOR104          Subclass FOR104 indent level is 2 With uniting of preforms (e.g., laminating, etc.) (156/629.1)
      FOR110          Subclass FOR110 indent level is 2 With in situ activation or combining of etching components on surface (156/635.1)
      FOR111          Subclass FOR111 indent level is 2 With thin film of etchant between relatively moving substrate and conforming surface (e.g., chemical lapping, etc.) (156/636.1)
  FOR112          Subclass FOR112 indent level is 2 With relative movement between the substrate and a confined pool of etchant (156/637.1)
      FOR115          Subclass FOR115 indent level is 2 Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant (156/640.1)
      FOR116          Subclass FOR116 indent level is 2 Recycling or regenerating etchant (156/642.1)
      FOR117          Subclass FOR117 indent level is 2 With treatment by high energy radiation or plasma (e.g., ion beam, etc.) (156/643.1)
      FOR118          Subclass FOR118 indent level is 2 Forming or increasing the size of an aperture (156/644.1)
      FOR119          Subclass FOR119 indent level is 2 With mechanical deformation, severing, or abrading of a substrate (156/ 645.1)
      FOR120          Subclass FOR120 indent level is 2 Etchant is a gas (156/646.1)
      FOR121          Subclass FOR121 indent level is 2 Etching according to crystalline planes (156/647.1)
  FOR122          Subclass FOR122 indent level is 2 Etching isolates or modifies a junction in a barrier layer (156/648.1)
  FOR124          Subclass FOR124 indent level is 2 Sequential application of etchant material (156/650.1)
  FOR128          Subclass FOR128 indent level is 2 Differential etching of a substrate (156/654.1)
      FOR134          Subclass FOR134 indent level is 2 Silicon, germanium, or gallium containing substrate (156/662.1)
      FOR135          MAKING DEVICE HAVING ORGANIC SEMICONDUCTOR COMPONENT (437/1)
  FOR136          MAKING DEVICE RESPONSIVE TO RADIATION (437/2)
      FOR137          Subclass FOR137 indent level is 1 Radiation detectors, e.g., infrared, etc. (437/3)
      FOR138          Subclass FOR138 indent level is 1 Composed of polycrystalline material (437/4)
      FOR139          Subclass FOR139 indent level is 1 Having semiconductor compound (437/5)
      FOR140          MAKING THYRISTOR, E.G., DIAC, TRIAC, ETC. (437/6)
      FOR141          INCLUDING CONTROL RESPONSIVE TO SENSED CONDITION (437/7)
      FOR142          INCLUDING TESTING OR MEASURING (437/8)
      FOR143          INCLUDING APPLICATION OF VIBRATORY FORCE (437/9)
  FOR144          INCLUDING GETTERING (437/10)
      FOR145          Subclass FOR145 indent level is 1 By ion implanting or irradiating (437/11)
      FOR146          Subclass FOR146 indent level is 1 By layers which are coated, contacted, or diffused (437/12)
      FOR147          Subclass FOR147 indent level is 1 By vapor phase surface reaction (437/13)
      FOR148          THERMOMIGRATION (437/14)
  FOR149          INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15)
  FOR150          Subclass FOR150 indent level is 1 Using energy beam to introduce dopant or modify dopant distribution (437/ 16)
      FOR151          Subclass FOR151 indent level is 2 Neutron, gamma ray or electron beam (437/17)
      FOR152          Subclass FOR152 indent level is 2 Ionized molecules (437/18)
      FOR153          Subclass FOR153 indent level is 2 Coherent light beam (437/19)
      FOR154          Subclass FOR154 indent level is 2 Ion beam implantation (437/20)
  FOR155          Subclass FOR155 indent level is 2 Of semiconductor on insulating substrate (437/21)
  FOR156          Subclass FOR156 indent level is 3 Of semiconductor compound (437/22)
      FOR157          Subclass FOR157 indent level is 4 Light emitting diode (LED) (437/23)
      FOR158          Subclass FOR158 indent level is 3 Providing nondopant ion including proton (437/24)
      FOR159          Subclass FOR159 indent level is 3 Providing auxiliary heating (437/25)
      FOR160          Subclass FOR160 indent level is 3 Forming buried region (437/26)
  FOR161          Subclass FOR161 indent level is 3 Including multiple implantations of same region (437/27)
      FOR169          Subclass FOR169 indent level is 3 Using oblique beam (437/35)
      FOR170          Subclass FOR170 indent level is 3 Using shadow mask (437/36)
      FOR171          Subclass FOR171 indent level is 3 Having projected range less than thickness of dielectrics on substrate (437/37)
      FOR172          Subclass FOR172 indent level is 3 Into shaped or grooved semiconductor substrate (437/38)
  FOR173          Subclass FOR173 indent level is 3 Involving Schottky contact formation (437/39)
  FOR202          Subclass FOR202 indent level is 4 Gate structure constructed of diverse dielectrics (437/42)
      FOR203          Subclass FOR203 indent level is 5 Gate surrounded by dielectric layer, e.g., floating gate, etc. (437/43)
      FOR204          Subclass FOR204 indent level is 5 Adjusting channel dimension (437/44)
      FOR205          Subclass FOR205 indent level is 5 Active step for controlling threshold voltage (437/45)
      FOR185          Subclass FOR185 indent level is 5 Self-aligned (437/41 R)
      FOR186          Subclass FOR186 indent level is 5 With bipolar (437/41 RBP)
      FOR187          Subclass FOR187 indent level is 5 CMOS (437/41 RCM)
      FOR188          Subclass FOR188 indent level is 5 Lightly doped drain (437/41 RLD)
      FOR189          Subclass FOR189 indent level is 5 Memory devices (437/41 RMM)
      FOR190          Subclass FOR190 indent level is 5 Asymmetrical FET (437/41 AS)
      FOR191          Subclass FOR191 indent level is 5 Channel specifics (437/41 CS)
      FOR192          Subclass FOR192 indent level is 5 DMOS/vertical FET (437/41 DM)
      FOR193          Subclass FOR193 indent level is 5 Gate specifics (437/41 GS)
      FOR194          Subclass FOR194 indent level is 5 Junction FET/static induction transistor (437/41 JF)
      FOR195          Subclass FOR195 indent level is 5 Layered channel (437/41 LC)
      FOR196          Subclass FOR196 indent level is 5 Specifics of metallization/contact (437/41 SM)
      FOR197          Subclass FOR197 indent level is 5 Recessed gate (Schottky falls below in SH) (437/41 RG)
      FOR198          Subclass FOR198 indent level is 5 Schottky gate/MESFET (437/41 SH)
      FOR199          Subclass FOR199 indent level is 5 Sidewall (437/41 SW)
      FOR200          Subclass FOR200 indent level is 5 Thin film transistor, inverted (437/41 TFI)
      FOR201          Subclass FOR201 indent level is 5 Thin film transistor (437/41 TFT)
      FOR174          Subclass FOR174 indent level is 4 Forming pair of device regions separated by gate structure, i.e., FET (437/40 R)
      FOR175          Subclass FOR175 indent level is 4 Asymmetrical FET (any asymmetry in S/D profile, gate spacing, etc.) (437/40 AS)
      FOR176          Subclass FOR176 indent level is 4 DMOS/vertical FET (437/40 DM)
      FOR177          Subclass FOR177 indent level is 4 Gate specific (specifics of gate insulator/structure/material/ contact) (437/40 GS)
      FOR178          Subclass FOR178 indent level is 4 Junction FET/static induction transistor (437/40 JF)
      FOR179          Subclass FOR179 indent level is 4 Layered channel (e.g., HEMT, MODFET, 2DEG, heterostructure FETS) (437/40 LC)
      FOR180          Subclass FOR180 indent level is 4 Recessed gate (437/40 RG)
      FOR181          Subclass FOR181 indent level is 4 Schottky gate/MESFET (controls over RG) (437/40 SH)
      FOR182          Subclass FOR182 indent level is 4 Sidewall (not LDDs) (437/40 SW)
      FOR183          Subclass FOR183 indent level is 4 Thin film transistor inverted/staggered (437/40 TFI)
      FOR184          Subclass FOR184 indent level is 4 Thin film transistor (437/40 TFT)
      FOR206          Subclass FOR206 indent level is 3 Into polycrystalline or polyamorphous regions (437/46)
      FOR207          Subclass FOR207 indent level is 3 Integrating active with passive devices (437/47)
  FOR208          Subclass FOR208 indent level is 3 Forming plural active devices in grid/array, e.g., RAMS/ROMS, etc. (437/48)
      FOR210          Subclass FOR210 indent level is 3 Forming electrodes in laterally spaced relationships (437/50)
  FOR211          Subclass FOR211 indent level is 1 Making assemblies of plural individual devices having community feature, e.g., integrated circuit, electrical connection, etc. (437/51)
      FOR212          Subclass FOR212 indent level is 2 Memory devices (437/52)
      FOR213          Subclass FOR213 indent level is 2 Charge coupled devices (CCD) (437/53)
  FOR214          Subclass FOR214 indent level is 2 Diverse types (437/54)
  FOR221          Subclass FOR221 indent level is 1 Including isolation step (437/61)
      FOR222          Subclass FOR222 indent level is 2 By forming total dielectric isolation (437/62)
      FOR223          Subclass FOR223 indent level is 2 By forming vertical isolation combining dielectric and PN junction (437/63)
  FOR224          Subclass FOR224 indent level is 2 Using vertical dielectric (air-gap/insulator) and horizontal PN junction (437/64)
  FOR234          Subclass FOR234 indent level is 2 Isolation by PN junction only (437/74)
      FOR240          Subclass FOR240 indent level is 1 Shadow masking (437/80)
  FOR241          Subclass FOR241 indent level is 1 Doping during fluid growth of semiconductor material on substrate (437/81)
      FOR242          Subclass FOR242 indent level is 2 Including heat to anneal (437/82)
      FOR243          Subclass FOR243 indent level is 2 Growing single crystal on amorphous substrate (437/83)
      FOR244          Subclass FOR244 indent level is 2 Growing single crystal on single crystal insulator (SOS) (437/84)
      FOR245          Subclass FOR245 indent level is 2 Including purifying stage during growth (437/85)
      FOR246          Subclass FOR246 indent level is 2 Using transitory substrate (437/86)
      FOR247          Subclass FOR247 indent level is 2 Using inert atmosphere (437/87)
      FOR248          Subclass FOR248 indent level is 2 Using catalyst to alter growth process (437/88)
  FOR249          Subclass FOR249 indent level is 2 Growth through opening (437/89)
      FOR253          Subclass FOR253 indent level is 2 Specified crystal orientation other than (100) or (111) planes (437/93)
      FOR254          Subclass FOR254 indent level is 2 Introducing minority carrier life time reducing dopant during growth, i.e., deep level dopant Au (Gold), Cr (Cromium), Fe (Iron), Ni (Nickel), etc. (437/94)
  FOR255          Subclass FOR255 indent level is 2 Autodoping control (437/95)
  FOR257          Subclass FOR257 indent level is 2 Forming buried regions with outdiffusion control (437/97)
      FOR259          Subclass FOR259 indent level is 2 Growing mono and polycrystalline regions simultaneously (437/99)
      FOR260          Subclass FOR260 indent level is 2 Growing silicon carbide (SiC) (437/100)
      FOR261          Subclass FOR261 indent level is 2 Growing amorphous semiconductor material (437/101)
  FOR262          Subclass FOR262 indent level is 2 Source and substrate in close-space relationship (437/102)
  FOR265          Subclass FOR265 indent level is 2 Vacuum growing using molecular beam, i.e., vacuum deposition (437/105)
  FOR268          Subclass FOR268 indent level is 2 Growing single layer in multi-steps (437/108)
      FOR273          Subclass FOR273 indent level is 2 Using electric current, e.g., Peltier effect, glow discharge, etc. (437/ 113)
  FOR274          Subclass FOR274 indent level is 2 Using seed in liquid phase (437/114)
  FOR275          Subclass FOR275 indent level is 3 Pulling from melt (437/115)
      FOR276          Subclass FOR276 indent level is 4 And diffusing (437/116)
      FOR277          Subclass FOR277 indent level is 2 Liquid and vapor phase epitaxy in sequence (437/117)
      FOR278          Subclass FOR278 indent level is 2 Involving capillary action (437/118)
  FOR279          Subclass FOR279 indent level is 2 Sliding liquid phase epitaxy (437/119)
      FOR285          Subclass FOR285 indent level is 2 Tipping liquid phase epitaxy (437/125)
  FOR286          Subclass FOR286 indent level is 2 Heteroepitaxy (437/126)
  FOR294          Subclass FOR294 indent level is 1 By fusing dopant with substrate, e.g., alloying, etc. (437/134)
      FOR295          Subclass FOR295 indent level is 2 Using flux (437/135)
      FOR296          Subclass FOR296 indent level is 2 Passing electric current through material (437/136)
      FOR297          Subclass FOR297 indent level is 2 With application of pressure to material during fusing (437/137)
      FOR298          Subclass FOR298 indent level is 2 Including plural controlled heating or cooling steps (437/138)
      FOR299          Subclass FOR299 indent level is 2 Including diffusion after fusion step (437/139)
      FOR300          Subclass FOR300 indent level is 2 Including additional material to improve wettability or flow characteristics (437/140)
  FOR301          Subclass FOR301 indent level is 1 Diffusing a dopant (437/141)
      FOR302          Subclass FOR302 indent level is 2 To control carrier lifetime, i.e., deep level dopant Au (Gold), Cr (Chromium), Fe (Iron), Ni (Nickel), etc. (437/142)
      FOR303          Subclass FOR303 indent level is 2 Al (Aluminum) dopant (437/143)
      FOR304          Subclass FOR304 indent level is 2 Li (Lithium) dopant (437/144)
      FOR305          Subclass FOR305 indent level is 2 Including nonuniform heating (437/145)
      FOR306          Subclass FOR306 indent level is 2 To solid state solubility concentration (437/146)
  FOR307          Subclass FOR307 indent level is 2 Using multiple layered mask (437/147)
      FOR309          Subclass FOR309 indent level is 2 Forming partially overlapping regions (437/149)
  FOR310          Subclass FOR310 indent level is 2 Plural dopants in same region, e.g., through same mask opening, etc. (437/150)
      FOR311          Subclass FOR311 indent level is 3 Simultaneously (437/151)
      FOR312          Subclass FOR312 indent level is 2 Plural dopants simultaneously in plural region (437/152)
  FOR313          Subclass FOR313 indent level is 2 Single dopant forming plural diverse regions (437/153)
      FOR315          Subclass FOR315 indent level is 2 Using metal mask (437/155)
      FOR316          Subclass FOR316 indent level is 2 Outwardly (437/156)
      FOR317          Subclass FOR317 indent level is 2 Laterally under mask (437/157)
      FOR318          Subclass FOR318 indent level is 2 Edge diffusion by using edge portion of structure other than masking layer to mask (437/158)
      FOR319          Subclass FOR319 indent level is 2 From melt (437/159)
  FOR320          Subclass FOR320 indent level is 2 From solid dopant source in contact with substrate (437/160)
  FOR325          Subclass FOR325 indent level is 2 From vapor phase (437/165)
  FOR330          DIRECTLY APPLYING ELECTRICAL CURRENT (437/170)
      FOR331          Subclass FOR331 indent level is 1 And regulating temperature (437/171)
      FOR332          Subclass FOR332 indent level is 1 Alternating or pulsed current (437/172)
  FOR333          APPLYING CORPUSCULAR OR ELECTROMAGNETIC ENERGY (437/173)
      FOR334          Subclass FOR334 indent level is 1 To anneal (437/174)
  FOR335          FORMING SCHOTTKY CONTACT (437/175)
  FOR336          Subclass FOR336 indent level is 1 On semiconductor compound (437/176)
      FOR337          Subclass FOR337 indent level is 2 Multi-layer electrode (437/177)
      FOR338          Subclass FOR338 indent level is 1 Using platinum group silicide, i.e., silicide of Pt (Platinum), Pd (Palladium), Rh (Rhodium), Ru (Ruthenium), Ir (Iridium), Os (Osmium) (437/178)
      FOR339          Subclass FOR339 indent level is 1 Using metal, i.e., Pt (Platinum), Pd (Palladium), Rh (Rhodium), Ru (Ruthenium), Ir (Iridium), Os (Osmium), Au (Gold), Ag (Silver) (437/179)
  FOR340          MAKING OR ATTACHING ELECTRODE ON OR TO SEMICONDUCTOR, OR SECURING COMPLETED SEMICONDUCTOR TO MOUNTING OR HOUSING (437/180)
      FOR341          Subclass FOR341 indent level is 1 Forming transparent electrode (437/181)
      FOR342          Subclass FOR342 indent level is 1 Forming beam electrode (437/182)
      FOR343          Subclass FOR343 indent level is 1 Forming bump electrode (437/183)
      FOR344          Subclass FOR344 indent level is 1 Electrode formed on substrate composed of elements of Group III and Group V semiconductor compound (437/184)
      FOR345          Subclass FOR345 indent level is 1 Electrode formed on substrate composed of elements of Group II and Group VI semiconductor compound (437/185)
      FOR346          Subclass FOR346 indent level is 1 Single polycrystalline electrode layer on substrate (437/186)
  FOR347       &