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Class   257ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)
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When placing a mandatory classification in Class 257, a cross-reference classification is normally made in at least one of the appended E-subclasses.
[List of Pre Grant Publications for class 257 subclass 1][List of Patents for class 257 subclass 1]1 BULK EFFECT DEVICE
[List of Pre Grant Publications for class 257 subclass 2][List of Patents for class 257 subclass 2]2 Subclass 2 indent level is 1 Bulk effect switching in amorphous material
 [List of Pre Grant Publications for class 257 subclass 3][List of Patents for class 257 subclass 3]3 Subclass 3 indent level is 2 With means to localize region of conduction (e.g., "pore" structure)
 [List of Pre Grant Publications for class 257 subclass 4][List of Patents for class 257 subclass 4]4 Subclass 4 indent level is 2 With specified electrode composition or configuration
 [List of Pre Grant Publications for class 257 subclass 5][List of Patents for class 257 subclass 5]5 Subclass 5 indent level is 2 In array
[List of Pre Grant Publications for class 257 subclass 6][List of Patents for class 257 subclass 6]6 Subclass 6 indent level is 1 Intervalley transfer (e.g., Gunn effect)
 [List of Pre Grant Publications for class 257 subclass 7][List of Patents for class 257 subclass 7]7 Subclass 7 indent level is 2 In monolithic integrated circuit
 [List of Pre Grant Publications for class 257 subclass 8][List of Patents for class 257 subclass 8]8 Subclass 8 indent level is 2 Three or more terminal device
[List of Pre Grant Publications for class 257 subclass 9][List of Patents for class 257 subclass 9]9 THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE)
[List of Pre Grant Publications for class 257 subclass 10][List of Patents for class 257 subclass 10]10 Subclass 10 indent level is 1 Low workfunction layer for electron emission (e.g., photocathode electron emissive layer)
 [List of Pre Grant Publications for class 257 subclass 11][List of Patents for class 257 subclass 11]11 Subclass 11 indent level is 2 Combined with a heterojunction involving a III-V compound
[List of Pre Grant Publications for class 257 subclass 12][List of Patents for class 257 subclass 12]12 Subclass 12 indent level is 1 Heterojunction
 [List of Pre Grant Publications for class 257 subclass 13][List of Patents for class 257 subclass 13]13 Subclass 13 indent level is 2 Incoherent light emitter
[List of Pre Grant Publications for class 257 subclass 14][List of Patents for class 257 subclass 14]14 Subclass 14 indent level is 2 Quantum well
[List of Pre Grant Publications for class 257 subclass 26][List of Patents for class 257 subclass 26]26 Subclass 26 indent level is 2 Ballistic transport device
 [List of Pre Grant Publications for class 257 subclass 28][List of Patents for class 257 subclass 28]28 Subclass 28 indent level is 1 Non-heterojunction superlattice (e.g., doping superlattice or alternating metal and insulator layers)
 [List of Pre Grant Publications for class 257 subclass 29][List of Patents for class 257 subclass 29]29 Subclass 29 indent level is 1 Ballistic transport device (e.g., hot electron transistor)
[List of Pre Grant Publications for class 257 subclass 30][List of Patents for class 257 subclass 30]30 Subclass 30 indent level is 1 Tunneling through region of reduced conductivity
[List of Pre Grant Publications for class 257 subclass 31][List of Patents for class 257 subclass 31]31 Subclass 31 indent level is 2 Josephson
[List of Pre Grant Publications for class 257 subclass 37][List of Patents for class 257 subclass 37]37 Subclass 37 indent level is 2 At least one electrode layer of semiconductor material
 [List of Pre Grant Publications for class 257 subclass 39][List of Patents for class 257 subclass 39]39 Subclass 39 indent level is 2 Three or more electrode device
 [List of Pre Grant Publications for class 257 subclass 40][List of Patents for class 257 subclass 40]40 ORGANIC SEMICONDUCTOR MATERIAL
 [List of Pre Grant Publications for class 257 subclass 41][List of Patents for class 257 subclass 41]41 POINT CONTACT DEVICE
 [List of Pre Grant Publications for class 257 subclass 42][List of Patents for class 257 subclass 42]42 SEMICONDUCTOR IS SELENIUM OR TELLURIUM IN ELEMENTAL FORM
 [List of Pre Grant Publications for class 257 subclass 43][List of Patents for class 257 subclass 43]43 SEMICONDUCTOR IS AN OXIDE OF A METAL (E.G., CUO, ZNO) OR COPPER SULFIDE
[List of Pre Grant Publications for class 257 subclass 44][List of Patents for class 257 subclass 44]44 WITH METAL CONTACT ALLOYED TO ELEMENTAL SEMICONDUCTOR TYPE PN JUNCTION IN NONREGENERATIVE STRUCTURE
 [List of Pre Grant Publications for class 257 subclass 45][List of Patents for class 257 subclass 45]45 Subclass 45 indent level is 1 Elongated alloyed region (e.g., thermal gradient zone melting, TGZM)
 [List of Pre Grant Publications for class 257 subclass 46][List of Patents for class 257 subclass 46]46 Subclass 46 indent level is 1 In pn junction tunnel diode (Esaki diode)
 [List of Pre Grant Publications for class 257 subclass 47][List of Patents for class 257 subclass 47]47 Subclass 47 indent level is 1 In bipolar transistor structure
 [List of Pre Grant Publications for class 257 subclass 48][List of Patents for class 257 subclass 48]48 TEST OR CALIBRATION STRUCTURE
[List of Pre Grant Publications for class 257 subclass 49][List of Patents for class 257 subclass 49]49 NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION)
 [List of Pre Grant Publications for class 257 subclass 50][List of Patents for class 257 subclass 50]50 Subclass 50 indent level is 1 Non-single crystal, or recrystallized, active junction adapted to be electrically shorted (e.g., "anti-fuse" element)
 [List of Pre Grant Publications for class 257 subclass 51][List of Patents for class 257 subclass 51]51 Subclass 51 indent level is 1 Non-single crystal, or recrystallized, material forms active junction with single crystal material (e.g., monocrystal to polycrystal pn junction or heterojunction)
[List of Pre Grant Publications for class 257 subclass 52][List of Patents for class 257 subclass 52]52 Subclass 52 indent level is 1 Amorphous semiconductor material
[List of Pre Grant Publications for class 257 subclass 53][List of Patents for class 257 subclass 53]53 Subclass 53 indent level is 2 Responsive to nonelectrical external signals (e.g., light)
[List of Pre Grant Publications for class 257 subclass 57][List of Patents for class 257 subclass 57]57 Subclass 57 indent level is 2 Field effect device in amorphous semiconductor material
 [List of Pre Grant Publications for class 257 subclass 62][List of Patents for class 257 subclass 62]62 Subclass 62 indent level is 2 With impurity other than hydrogen to passivate dangling bonds (e.g., halide)
 [List of Pre Grant Publications for class 257 subclass 63][List of Patents for class 257 subclass 63]63 Subclass 63 indent level is 2 Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si x Ge 1-x , SiN y )
 [List of Pre Grant Publications for class 257 subclass 64][List of Patents for class 257 subclass 64]64 Subclass 64 indent level is 1 Non-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation)
 [List of Pre Grant Publications for class 257 subclass 65][List of Patents for class 257 subclass 65]65 Subclass 65 indent level is 1 Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., Ge x Si 1- x, polycrystalline silicon with dangling bond modifier)
[List of Pre Grant Publications for class 257 subclass 66][List of Patents for class 257 subclass 66]66 Subclass 66 indent level is 1 Field effect device in non-single crystal, or recrystallized, Semiconductor material
[List of Pre Grant Publications for class 257 subclass 67][List of Patents for class 257 subclass 67]67 Subclass 67 indent level is 2 In combination with device formed in single crystal semiconductor material (e.g., stacked FETs)
 [List of Pre Grant Publications for class 257 subclass 71][List of Patents for class 257 subclass 71]71 Subclass 71 indent level is 2 In combination with capacitor element (e.g., DRAM)
 [List of Pre Grant Publications for class 257 subclass 72][List of Patents for class 257 subclass 72]72 Subclass 72 indent level is 2 In array having structure for use as imager or display, or with transparent electrode
 [List of Pre Grant Publications for class 257 subclass 73][List of Patents for class 257 subclass 73]73 Subclass 73 indent level is 1 Schottky barrier to polycrystalline semiconductor material
 [List of Pre Grant Publications for class 257 subclass 74][List of Patents for class 257 subclass 74]74 Subclass 74 indent level is 1 Plural recrystallized semiconductor layers (e.g., "3-dimensional integrated circuit")
 [List of Pre Grant Publications for class 257 subclass 75][List of Patents for class 257 subclass 75]75 Subclass 75 indent level is 1 Recrystallized semiconductor material
[List of Pre Grant Publications for class 257 subclass 76][List of Patents for class 257 subclass 76]76 SPECIFIED WIDE BAND GAP (1.5EV) SEMICONDUCTOR MATERIAL OTHER THAN GAASP OR GAALAS
 [List of Pre Grant Publications for class 257 subclass 77][List of Patents for class 257 subclass 77]77 Subclass 77 indent level is 1 Diamond or silicon carbide
 [List of Pre Grant Publications for class 257 subclass 78][List of Patents for class 257 subclass 78]78 Subclass 78 indent level is 1 II-VI compound
[List of Pre Grant Publications for class 257 subclass 79][List of Patents for class 257 subclass 79]79 INCOHERENT LIGHT EMITTER STRUCTURE
[List of Pre Grant Publications for class 257 subclass 80][List of Patents for class 257 subclass 80]80 Subclass 80 indent level is 1 In combination with or also constituting light responsive device
[List of Pre Grant Publications for class 257 subclass 81][List of Patents for class 257 subclass 81]81 Subclass 81 indent level is 2 With specific housing or contact structure
 [List of Pre Grant Publications for class 257 subclass 83][List of Patents for class 257 subclass 83]83 Subclass 83 indent level is 2 Light coupled transistor structure
[List of Pre Grant Publications for class 257 subclass 84][List of Patents for class 257 subclass 84]84 Subclass 84 indent level is 2 Combined in integrated structure
[List of Pre Grant Publications for class 257 subclass 86][List of Patents for class 257 subclass 86]86 Subclass 86 indent level is 1 Active layer of indirect band gap semiconductor
 [List of Pre Grant Publications for class 257 subclass 87][List of Patents for class 257 subclass 87]87 Subclass 87 indent level is 2 With means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in GaP)
[List of Pre Grant Publications for class 257 subclass 88][List of Patents for class 257 subclass 88]88 Subclass 88 indent level is 1 Plural light emitting devices (e.g., matrix, 7-segment array)
[List of Pre Grant Publications for class 257 subclass 89][List of Patents for class 257 subclass 89]89 Subclass 89 indent level is 2 Multi-color emission
 [List of Pre Grant Publications for class 257 subclass 91][List of Patents for class 257 subclass 91]91 Subclass 91 indent level is 2 With shaped contacts or opaque masking
 [List of Pre Grant Publications for class 257 subclass 92][List of Patents for class 257 subclass 92]92 Subclass 92 indent level is 2 Alphanumeric segmented array
 [List of Pre Grant Publications for class 257 subclass 93][List of Patents for class 257 subclass 93]93 Subclass 93 indent level is 2 With electrical isolation means in integrated circuit structure
[List of Pre Grant Publications for class 257 subclass 94][List of Patents for class 257 subclass 94]94 Subclass 94 indent level is 1 With heterojunction
 [List of Pre Grant Publications for class 257 subclass 95][List of Patents for class 257 subclass 95]95 Subclass 95 indent level is 2 With contoured external surface (e.g., dome shape to facilitate light emission)
[List of Pre Grant Publications for class 257 subclass 96][List of Patents for class 257 subclass 96]96 Subclass 96 indent level is 2 Plural heterojunctions in same device
 [List of Pre Grant Publications for class 257 subclass 98][List of Patents for class 257 subclass 98]98 Subclass 98 indent level is 1 With reflector, opaque mask, or optical element (e.g., lens, optical fiber, index of refraction matching layer, luminescent material layer, filter) integral with device or device enclosure or package
 [List of Pre Grant Publications for class 257 subclass 99][List of Patents for class 257 subclass 99]99 Subclass 99 indent level is 1 With housing or contact structure
 [List of Pre Grant Publications for class 257 subclass 100][List of Patents for class 257 subclass 100]100 Subclass 100 indent level is 1 Encapsulated
 [List of Pre Grant Publications for class 257 subclass 101][List of Patents for class 257 subclass 101]101 Subclass 101 indent level is 1 With particular dopant concentration or concentration profile (e.g., graded junction)
 [List of Pre Grant Publications for class 257 subclass 102][List of Patents for class 257 subclass 102]102 Subclass 102 indent level is 1 With particular dopant material (e.g., zinc as dopant in GaAs)
 [List of Pre Grant Publications for class 257 subclass 103][List of Patents for class 257 subclass 103]103 Subclass 103 indent level is 1 With particular semiconductor material
[List of Pre Grant Publications for class 257 subclass 104][List of Patents for class 257 subclass 104]104 TUNNELING PN JUNCTION (E.G., ESAKI DIODE) DEVICE
 [List of Pre Grant Publications for class 257 subclass 105][List of Patents for class 257 subclass 105]105 Subclass 105 indent level is 1 In three or more terminal device
 [List of Pre Grant Publications for class 257 subclass 106][List of Patents for class 257 subclass 106]106 Subclass 106 indent level is 1 Reverse bias tunneling structure (e.g., "backward" diode, true Zener diode)
[List of Pre Grant Publications for class 257 subclass 107][List of Patents for class 257 subclass 107]107 REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR)
 [List of Pre Grant Publications for class 257 subclass 108][List of Patents for class 257 subclass 108]108 Subclass 108 indent level is 1 Controlled by nonelectrical, nonoptical external signal (e.g., magnetic field, pressure, thermal)
[List of Pre Grant Publications for class 257 subclass 109][List of Patents for class 257 subclass 109]109 Subclass 109 indent level is 1 Having only two terminals and no control electrode (gate), e.g., Shockley diode
 [List of Pre Grant Publications for class 257 subclass 110][List of Patents for class 257 subclass 110]110 Subclass 110 indent level is 2 More than four semiconductor layers of alternating conductivity types (e.g., pnpnpn structure, 5 layer bidirectional diacs, etc.)
 [List of Pre Grant Publications for class 257 subclass 111][List of Patents for class 257 subclass 111]111 Subclass 111 indent level is 2 Triggered by V BO overvoltage means
 [List of Pre Grant Publications for class 257 subclass 112][List of Patents for class 257 subclass 112]112 Subclass 112 indent level is 2 With highly-doped breakdown diode trigger
[List of Pre Grant Publications for class 257 subclass 113][List of Patents for class 257 subclass 113]113 Subclass 113 indent level is 1 With light activation
 [List of Pre Grant Publications for class 257 subclass 114][List of Patents for class 257 subclass 114]114 Subclass 114 indent level is 2 With separate light detector integrated on chip with regenerative switching device
 [List of Pre Grant Publications for class 257 subclass 115][List of Patents for class 257 subclass 115]115 Subclass 115 indent level is 2 With electrical trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.)
[List of Pre Grant Publications for class 257 subclass 116][List of Patents for class 257 subclass 116]116 Subclass 116 indent level is 2 With light conductor means (e.g., light fiber or light pipe) integral with device or device enclosure or package
 [List of Pre Grant Publications for class 257 subclass 118][List of Patents for class 257 subclass 118]118 Subclass 118 indent level is 2 With groove or thinned light sensitive portion
[List of Pre Grant Publications for class 257 subclass 119][List of Patents for class 257 subclass 119]119 Subclass 119 indent level is 1 Bidirectional rectifier with control electrode (gate) (e.g., Triac)
 [List of Pre Grant Publications for class 257 subclass 120][List of Patents for class 257 subclass 120]120 Subclass 120 indent level is 2 Six or more semiconductor layers of alternating conductivity types (e.g., npnpnpn structure)
 [List of Pre Grant Publications for class 257 subclass 121][List of Patents for class 257 subclass 121]121 Subclass 121 indent level is 2 With diode or transistor in reverse path
 [List of Pre Grant Publications for class 257 subclass 122][List of Patents for class 257 subclass 122]122 Subclass 122 indent level is 2 Lateral
 [List of Pre Grant Publications for class 257 subclass 123][List of Patents for class 257 subclass 123]123 Subclass 123 indent level is 2 With trigger signal amplification (e.g., amplified gate)
[List of Pre Grant Publications for class 257 subclass 124][List of Patents for class 257 subclass 124]124 Subclass 124 indent level is 2 Combined with field effect transistor structure
[List of Pre Grant Publications for class 257 subclass 126][List of Patents for class 257 subclass 126]126 Subclass 126 indent level is 2 With means to separate a device into sections having different conductive polarity
 [List of Pre Grant Publications for class 257 subclass 128][List of Patents for class 257 subclass 128]128 Subclass 128 indent level is 2 Having overlapping sections of different conductive polarity
 [List of Pre Grant Publications for class 257 subclass 129][List of Patents for class 257 subclass 129]129 Subclass 129 indent level is 2 With means to increase reverse breakdown voltage
[List of Pre Grant Publications for class 257 subclass 130][List of Patents for class 257 subclass 130]130 Subclass 130 indent level is 2 Switching speed enhancement means
 [List of Pre Grant Publications for class 257 subclass 132][List of Patents for class 257 subclass 132]132 Subclass 132 indent level is 1 Five or more layer unidirectional structure
[List of Pre Grant Publications for class 257 subclass 133][List of Patents for class 257 subclass 133]133 Subclass 133 indent level is 1 Combined with field effect transistor
[List of Pre Grant Publications for class 257 subclass 134][List of Patents for class 257 subclass 134]134 Subclass 134 indent level is 2 J-FET (junction field effect transistor)
[List of Pre Grant Publications for class 257 subclass 137][List of Patents for class 257 subclass 137]137 Subclass 137 indent level is 2 Having controllable emitter shunt
[List of Pre Grant Publications for class 257 subclass 139][List of Patents for class 257 subclass 139]139 Subclass 139 indent level is 2 With extended latchup current level (e.g., COMFET device)
 [List of Pre Grant Publications for class 257 subclass 146][List of Patents for class 257 subclass 146]146 Subclass 146 indent level is 1 Combined with other solid-state active device in integrated structure
[List of Pre Grant Publications for class 257 subclass 147][List of Patents for class 257 subclass 147]147 Subclass 147 indent level is 1 With extended latchup current level (e.g., gate turn off "GTO" device)
 [List of Pre Grant Publications for class 257 subclass 148][List of Patents for class 257 subclass 148]148 Subclass 148 indent level is 2 Having impurity doping for gain reduction
 [List of Pre Grant Publications for class 257 subclass 149][List of Patents for class 257 subclass 149]149 Subclass 149 indent level is 2 Having anode shunt means
[List of Pre Grant Publications for class 257 subclass 150][List of Patents for class 257 subclass 150]150 Subclass 150 indent level is 2 With specified housing or external terminal
 [List of Pre Grant Publications for class 257 subclass 152][List of Patents for class 257 subclass 152]152 Subclass 152 indent level is 2 Cathode emitter or cathode electrode feature
 [List of Pre Grant Publications for class 257 subclass 153][List of Patents for class 257 subclass 153]153 Subclass 153 indent level is 2 Gate region or electrode feature
 [List of Pre Grant Publications for class 257 subclass 154][List of Patents for class 257 subclass 154]154 Subclass 154 indent level is 1 With resistive region connecting separate sections of device
[List of Pre Grant Publications for class 257 subclass 155][List of Patents for class 257 subclass 155]155 Subclass 155 indent level is 1 With switching speed enhancement means (e.g., Schottky contact)
 [List of Pre Grant Publications for class 257 subclass 156][List of Patents for class 257 subclass 156]156 Subclass 156 indent level is 2 Having deep level dopants or recombination centers
[List of Pre Grant Publications for class 257 subclass 157][List of Patents for class 257 subclass 157]157 Subclass 157 indent level is 1 With integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.)
 [List of Pre Grant Publications for class 257 subclass 158][List of Patents for class 257 subclass 158]158 Subclass 158 indent level is 2 Three or more amplification stages
 [List of Pre Grant Publications for class 257 subclass 159][List of Patents for class 257 subclass 159]159 Subclass 159 indent level is 2 Transistor as amplifier
 [List of Pre Grant Publications for class 257 subclass 160][List of Patents for class 257 subclass 160]160 Subclass 160 indent level is 2 With distributed amplified current
 [List of Pre Grant Publications for class 257 subclass 161][List of Patents for class 257 subclass 161]161 Subclass 161 indent level is 2 With a turn-off diode
 [List of Pre Grant Publications for class 257 subclass 162][List of Patents for class 257 subclass 162]162 Subclass 162 indent level is 1 Lateral structure
[List of Pre Grant Publications for class 257 subclass 163][List of Patents for class 257 subclass 163]163 Subclass 163 indent level is 1 Emitter region feature
[List of Pre Grant Publications for class 257 subclass 164][List of Patents for class 257 subclass 164]164 Subclass 164 indent level is 2 Multi-emitter region (e.g., emitter geometry or emitter ballast resistor)
 [List of Pre Grant Publications for class 257 subclass 167][List of Patents for class 257 subclass 167]167 Subclass 167 indent level is 1 Having at least four external electrodes
[List of Pre Grant Publications for class 257 subclass 168][List of Patents for class 257 subclass 168]168 Subclass 168 indent level is 1 With means to increase breakdown voltage
 [List of Pre Grant Publications for class 257 subclass 169][List of Patents for class 257 subclass 169]169 Subclass 169 indent level is 2 High resistivity base layer
[List of Pre Grant Publications for class 257 subclass 170][List of Patents for class 257 subclass 170]170 Subclass 170 indent level is 2 Surface feature (e.g., guard ring, groove, mesa, etc.)
 [List of Pre Grant Publications for class 257 subclass 172][List of Patents for class 257 subclass 172]172 Subclass 172 indent level is 1 With means to lower "ON" voltage drop
[List of Pre Grant Publications for class 257 subclass 173][List of Patents for class 257 subclass 173]173 Subclass 173 indent level is 1 Device protection (e.g., from overvoltage)
 [List of Pre Grant Publications for class 257 subclass 174][List of Patents for class 257 subclass 174]174 Subclass 174 indent level is 2 Rate of rise of current (e.g., dI/dt)
[List of Pre Grant Publications for class 257 subclass 175][List of Patents for class 257 subclass 175]175 Subclass 175 indent level is 1 With means to control triggering (e.g., gate electrode configuration, Zener diode firing, dV/Dt control, transient control by ferrite bead, etc.)
 [List of Pre Grant Publications for class 257 subclass 176][List of Patents for class 257 subclass 176]176 Subclass 176 indent level is 2 Located in an emitter-gate region
[List of Pre Grant Publications for class 257 subclass 177][List of Patents for class 257 subclass 177]177 Subclass 177 indent level is 1 With housing or external electrode
[List of Pre Grant Publications for class 257 subclass 178][List of Patents for class 257 subclass 178]178 Subclass 178 indent level is 2 With means to avoid stress between electrode and active device (e.g., thermal expansion matching of electrode to semiconductor)
 [List of Pre Grant Publications for class 257 subclass 180][List of Patents for class 257 subclass 180]180 Subclass 180 indent level is 2 Stud mount
[List of Pre Grant Publications for class 257 subclass 181][List of Patents for class 257 subclass 181]181 Subclass 181 indent level is 2 With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, (e.g., ring)
[List of Pre Grant Publications for class 257 subclass 183][List of Patents for class 257 subclass 183]183 HETEROJUNCTION DEVICE
 [List of Pre Grant Publications for class 257 subclass 183.1][List of Patents for class 257 subclass 183.1]183.1 Subclass 183.1 indent level is 1 Charge transfer device
[List of Pre Grant Publications for class 257 subclass 184][List of Patents for class 257 subclass 184]184 Subclass 184 indent level is 1 Light responsive structure
 [List of Pre Grant Publications for class 257 subclass 185][List of Patents for class 257 subclass 185]185 Subclass 185 indent level is 2 Staircase (including graded composition) device
 [List of Pre Grant Publications for class 257 subclass 186][List of Patents for class 257 subclass 186]186 Subclass 186 indent level is 2 Avalanche photodetection structure
 [List of Pre Grant Publications for class 257 subclass 187][List of Patents for class 257 subclass 187]187 Subclass 187 indent level is 2 Having transistor structure
[List of Pre Grant Publications for class 257 subclass 188][List of Patents for class 257 subclass 188]188 Subclass 188 indent level is 2 Having narrow energy band gap (<<1eV) layer (e.g., PbSnTe, HgCdTe, etc.)
 [List of Pre Grant Publications for class 257 subclass 190][List of Patents for class 257 subclass 190]190 Subclass 190 indent level is 1 With lattice constant mismatch (e.g., with buffer layer to accommodate mismatch)
 [List of Pre Grant Publications for class 257 subclass 191][List of Patents for class 257 subclass 191]191 Subclass 191 indent level is 1 Having graded composition
[List of Pre Grant Publications for class 257 subclass 192][List of Patents for class 257 subclass 192]192 Subclass 192 indent level is 1 Field effect transistor
[List of Pre Grant Publications for class 257 subclass 194][List of Patents for class 257 subclass 194]194 Subclass 194 indent level is 2 Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (HEMT))
 [List of Pre Grant Publications for class 257 subclass 196][List of Patents for class 257 subclass 196]196 Subclass 196 indent level is 1 Both semiconductors of the heterojunction are the same conductivity type (i.e., either n or p)
[List of Pre Grant Publications for class 257 subclass 197][List of Patents for class 257 subclass 197]197 Subclass 197 indent level is 1 Bipolar transistor
 [List of Pre Grant Publications for class 257 subclass 198][List of Patents for class 257 subclass 198]198 Subclass 198 indent level is 2 Wide band gap emitter
 [List of Pre Grant Publications for class 257 subclass 199][List of Patents for class 257 subclass 199]199 Subclass 199 indent level is 1 Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts, including heterojunction IMPATT type microwave diodes)
 [List of Pre Grant Publications for class 257 subclass 200][List of Patents for class 257 subclass 200]200 Subclass 200 indent level is 1 Heterojunction formed between semiconductor materials which differ in that they belong to different periodic table groups (e.g., Ge (group IV) - GaAs (group III-V) or InP (group III-V) - CdTe (group II-VI))
 [List of Pre Grant Publications for class 257 subclass 201][List of Patents for class 257 subclass 201]201 Subclass 201 indent level is 1 Between different group IV-VI or II-VI or III-V compounds other than GaAs/GaAlAs
[List of Pre Grant Publications for class 257 subclass 202][List of Patents for class 257 subclass 202]202 GATE ARRAYS
 [List of Pre Grant Publications for class 257 subclass 203][List of Patents for class 257 subclass 203]203 Subclass 203 indent level is 1 With particular chip input/output means
[List of Pre Grant Publications for class 257 subclass 204][List of Patents for class 257 subclass 204]204 Subclass 204 indent level is 1 Having specific type of active device (e.g., CMOS)
 [List of Pre Grant Publications for class 257 subclass 205][List of Patents for class 257 subclass 205]205 Subclass 205 indent level is 2 With bipolar transistors or with FETs of only one channel conductivity type (e.g., enhancement-depletion FETs)
 [List of Pre Grant Publications for class 257 subclass 206][List of Patents for class 257 subclass 206]206 Subclass 206 indent level is 2 Particular layout of complementary FETs with regard to each other
 [List of Pre Grant Publications for class 257 subclass 207][List of Patents for class 257 subclass 207]207 Subclass 207 indent level is 1 With particular power supply distribution means
[List of Pre Grant Publications for class 257 subclass 208][List of Patents for class 257 subclass 208]208 Subclass 208 indent level is 1 With particular signal path connections
 [List of Pre Grant Publications for class 257 subclass 209][List of Patents for class 257 subclass 209]209 Subclass 209 indent level is 2 Programmable signal paths (e.g., with fuse elements, laser programmable, etc)
 [List of Pre Grant Publications for class 257 subclass 210][List of Patents for class 257 subclass 210]210 Subclass 210 indent level is 2 With wiring channel area
 [List of Pre Grant Publications for class 257 subclass 211][List of Patents for class 257 subclass 211]211 Subclass 211 indent level is 2 Multi-level metallization
 [List of Pre Grant Publications for class 257 subclass 212][List of Patents for class 257 subclass 212]212 CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE-BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR)
[List of Pre Grant Publications for class 257 subclass 213][List of Patents for class 257 subclass 213]213 FIELD EFFECT DEVICE
 [List of Pre Grant Publications for class 257 subclass 214][List of Patents for class 257 subclass 214]214 Subclass 214 indent level is 1 Charge injection device
[List of Pre Grant Publications for class 257 subclass 215][List of Patents for class 257 subclass 215]215 Subclass 215 indent level is 1 Charge transfer device
[List of Pre Grant Publications for class 257 subclass 216][List of Patents for class 257 subclass 216]216 Subclass 216 indent level is 2 Majority signal carrier (e.g., buried or bulk channel, or peristaltic)
[List of Pre Grant Publications for class 257 subclass 225][List of Patents for class 257 subclass 225]225 Subclass 225 indent level is 2 Non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.)
[List of Pre Grant Publications for class 257 subclass 235][List of Patents for class 257 subclass 235]235 Subclass 235 indent level is 2 Electrical input
 [List of Pre Grant Publications for class 257 subclass 239][List of Patents for class 257 subclass 239]239 Subclass 239 indent level is 2 Signal charge detection type (e.g., floating diffusion or floating gate non-destructive output)
 [List of Pre Grant Publications for class 257 subclass 240][List of Patents for class 257 subclass 240]240 Subclass 240 indent level is 2 Changing width or direction of channel (e.g., meandering channel)
 [List of Pre Grant Publications for class 257 subclass 241][List of Patents for class 257 subclass 241]241 Subclass 241 indent level is 2 Multiple channels (e.g., converging or diverging or parallel channels)
 [List of Pre Grant Publications for class 257 subclass 242][List of Patents for class 257 subclass 242]242 Subclass 242 indent level is 2 Vertical charge transfer
 [List of Pre Grant Publications for class 257 subclass 243][List of Patents for class 257 subclass 243]243 Subclass 243 indent level is 2 Channel confinement
 [List of Pre Grant Publications for class 257 subclass 244][List of Patents for class 257 subclass 244]244 Subclass 244 indent level is 2 Comprising a groove
[List of Pre Grant Publications for class 257 subclass 245][List of Patents for class 257 subclass 245]245 Subclass 245 indent level is 2 Structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel)
 [List of Pre Grant Publications for class 257 subclass 251][List of Patents for class 257 subclass 251]251 Subclass 251 indent level is 2 Substantially incomplete signal charge transfer (e.g., bucket brigade)
[List of Pre Grant Publications for class 257 subclass 252][List of Patents for class 257 subclass 252]252 Subclass 252 indent level is 1 Responsive to non-optical, non-electrical signal
 [List of Pre Grant Publications for class 257 subclass 253][List of Patents for class 257 subclass 253]253 Subclass 253 indent level is 2 Chemical (e.g., ISFET, CHEMFET)
 [List of Pre Grant Publications for class 257 subclass 254][List of Patents for class 257 subclass 254]254 Subclass 254 indent level is 2 Physical deformation (e.g., strain sensor, acoustic wave detector)
 [List of Pre Grant Publications for class 257 subclass 255][List of Patents for class 257 subclass 255]255 Subclass 255 indent level is 1 With current flow along specified crystal axis (e.g., axis of maximum carrier mobility)
[List of Pre Grant Publications for class 257 subclass 256][List of Patents for class 257 subclass 256]256 Subclass 256 indent level is 1 Junction field effect transistor (unipolar transistor)
[List of Pre Grant Publications for class 257 subclass 257][List of Patents for class 257 subclass 257]257 Subclass 257 indent level is 2 Light responsive or combined with light responsive device
 [List of Pre Grant Publications for class 257 subclass 259][List of Patents for class 257 subclass 259]259 Subclass 259 indent level is 2 Elongated active region acts as transmission line or distributed active element (e.g., "transmission line" field effect transistor)
 [List of Pre Grant Publications for class 257 subclass 260][List of Patents for class 257 subclass 260]260 Subclass 260 indent level is 2 Same channel controlled by both junction and insulated gate electrodes, or by both Schottky barrier and pn junction gates (e.g., "taper isolated" memory cell)
 [List of Pre Grant Publications for class 257 subclass 261][List of Patents for class 257 subclass 261]261 Subclass 261 indent level is 2 Junction gate region free of direct electrical connection (e.g., floating junction gate memory cell structure)
 [List of Pre Grant Publications for class 257 subclass 262][List of Patents for class 257 subclass 262]262 Subclass 262 indent level is 2 Combined with insulated gate field effect transistor (IGFET)
[List of Pre Grant Publications for class 257 subclass 263][List of Patents for class 257 subclass 263]263 Subclass 263 indent level is 2 Vertical controlled current path
[List of Pre Grant Publications for class 257 subclass 268][List of Patents for class 257 subclass 268]268 Subclass 268 indent level is 2 Enhancement mode
 [List of Pre Grant Publications for class 257 subclass 270][List of Patents for class 257 subclass 270]270 Subclass 270 indent level is 2 Plural, separately connected, gates control same channel region
 [List of Pre Grant Publications for class 257 subclass 271][List of Patents for class 257 subclass 271]271 Subclass 271 indent level is 2 Load element or constant current source (e.g., with source to gate connection)
[List of Pre Grant Publications for class 257 subclass 272][List of Patents for class 257 subclass 272]272 Subclass 272 indent level is 2 Junction field effect transistor in integrated circuit
 [List of Pre Grant Publications for class 257 subclass 279][List of Patents for class 257 subclass 279]279 Subclass 279 indent level is 2 Pn junction gate in compound semiconductor material (e.g., GaAs)
[List of Pre Grant Publications for class 257 subclass 280][List of Patents for class 257 subclass 280]280 Subclass 280 indent level is 2 With Schottky gate
 [List of Pre Grant Publications for class 257 subclass 285][List of Patents for class 257 subclass 285]285 Subclass 285 indent level is 2 With profiled channel dopant concentration or profiled gate region dopant concentration (e.g., maximum dopant concentration below surface)
 [List of Pre Grant Publications for class 257 subclass 286][List of Patents for class 257 subclass 286]286 Subclass 286 indent level is 2 With non-uniform channel thickness or width
 [List of Pre Grant Publications for class 257 subclass 287][List of Patents for class 257 subclass 287]287 Subclass 287 indent level is 2 With multiple channels or channel segments connected in parallel, or with channel much wider than length between source and drain (e.g., power JFET)
[List of Pre Grant Publications for class 257 subclass 288][List of Patents for class 257 subclass 288]288 Subclass 288 indent level is 1 Having insulated electrode (e.g., MOSFET, MOS diode)
 [List of Pre Grant Publications for class 257 subclass 289][List of Patents for class 257 subclass 289]289 Subclass 289 indent level is 2 Significant semiconductor chemical compound in bulk crystal (e.g., GaAs)
[List of Pre Grant Publications for class 257 subclass 290][List of Patents for class 257 subclass 290]290 Subclass 290 indent level is 2 Light responsive or combined with light responsive device
 [List of Pre Grant Publications for class 257 subclass 295][List of Patents for class 257 subclass 295]295 Subclass 295 indent level is 2 With ferroelectric material layer
[List of Pre Grant Publications for class 257 subclass 296][List of Patents for class 257 subclass 296]296 Subclass 296 indent level is 2 Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell)
[List of Pre Grant Publications for class 257 subclass 314][List of Patents for class 257 subclass 314]314 Subclass 314 indent level is 2 Variable threshold (e.g., floating gate memory device)
[List of Pre Grant Publications for class 257 subclass 327][List of Patents for class 257 subclass 327]327 Subclass 327 indent level is 2 Short channel insulated gate field effect transistor
[List of Pre Grant Publications for class 257 subclass 347][List of Patents for class 257 subclass 347]347 Subclass 347 indent level is 2 Single crystal semiconductor layer on insulating substrate (SOI)
[List of Pre Grant Publications for class 257 subclass 355][List of Patents for class 257 subclass 355]355 Subclass 355 indent level is 2 With overvoltage protective means
 [List of Pre Grant Publications for class 257 subclass 364][List of Patents for class 257 subclass 364]364 Subclass 364 indent level is 2 With resistive gate electrode
[List of Pre Grant Publications for class 257 subclass 365][List of Patents for class 257 subclass 365]365 Subclass 365 indent level is 2 With plural, separately connected, gate electrodes in same device
 [List of Pre Grant Publications for class 257 subclass 367][List of Patents for class 257 subclass 367]367 Subclass 367 indent level is 2 Insulated gate controlled breakdown of pn junction (e.g., field plate diode)
[List of Pre Grant Publications for class 257 subclass 368][List of Patents for class 257 subclass 368]368 Subclass 368 indent level is 2 Insulated gate field effect transistor in integrated circuit
[List of Pre Grant Publications for class 257 subclass 369][List of Patents for class 257 subclass 369]369 Subclass 369 indent level is 3 Complementary insulated gate field effect transistors
 [List of Pre Grant Publications for class 257 subclass 378][List of Patents for class 257 subclass 378]378 Subclass 378 indent level is 3 Combined with bipolar transistor
[List of Pre Grant Publications for class 257 subclass 379][List of Patents for class 257 subclass 379]379 Subclass 379 indent level is 3 Combined with passive components (e.g., resistors)
[List of Pre Grant Publications for class 257 subclass 382][List of Patents for class 257 subclass 382]382 Subclass 382 indent level is 3 With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide)
[List of Pre Grant Publications for class 257 subclass 386][List of Patents for class 257 subclass 386]386 Subclass 386 indent level is 3 With means to reduce parasitic capacitance
[List of Pre Grant Publications for class 257 subclass 390][List of Patents for class 257 subclass 390]390 Subclass 390 indent level is 3 Matrix or array of field effect transistors (e.g., array of FETs only some of which are completed, or structure for mask programmed read-only memory (ROM))
 [List of Pre Grant Publications for class 257 subclass 392][List of Patents for class 257 subclass 392]392 Subclass 392 indent level is 3 Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode)
 [List of Pre Grant Publications for class 257 subclass 393][List of Patents for class 257 subclass 393]393 Subclass 393 indent level is 3 Insulated gate field effect transistor adapted to function as load element for switching insulated gate field effect transistor
[List of Pre Grant Publications for class 257 subclass 394][List of Patents for class 257 subclass 394]394 Subclass 394 indent level is 3 With means to prevent parasitic conduction channels
 [List of Pre Grant Publications for class 257 subclass 401][List of Patents for class 257 subclass 401]401 Subclass 401 indent level is 3 With specified physical layout (e.g., ring gate, source/drain regions shared between plural FETs, plural sections connected in parallel to form power MOSFET)
[List of Pre Grant Publications for class 257 subclass 402][List of Patents for class 257 subclass 402]402 Subclass 402 indent level is 2 With permanent threshold adjustment (e.g., depletion mode)
 [List of Pre Grant Publications for class 257 subclass 408][List of Patents for class 257 subclass 408]408 Subclass 408 indent level is 2 Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, LDD device)
 [List of Pre Grant Publications for class 257 subclass 409][List of Patents for class 257 subclass 409]409 Subclass 409 indent level is 2 With means to increase breakdown voltage (e.g., field shield electrode, guard ring, etc.)
[List of Pre Grant Publications for class 257 subclass 410][List of Patents for class 257 subclass 410]410 Subclass 410 indent level is 2 Gate insulator includes material (including air or vacuum) other than SiO 2
[List of Pre Grant Publications for class 257 subclass 412][List of Patents for class 257 subclass 412]412 Subclass 412 indent level is 2 Gate electrode of refractory material (e.g., polysilicon or a silicide of a refractory or platinum group metal)
[List of Pre Grant Publications for class 257 subclass 414][List of Patents for class 257 subclass 414]414 RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS)
[List of Pre Grant Publications for class 257 subclass 415][List of Patents for class 257 subclass 415]415 Subclass 415 indent level is 1 Physical deformation
 [List of Pre Grant Publications for class 257 subclass 416][List of Patents for class 257 subclass 416]416 Subclass 416 indent level is 2 Acoustic wave
[List of Pre Grant Publications for class 257 subclass 417][List of Patents for class 257 subclass 417]417 Subclass 417 indent level is 2 Strain sensors
 [List of Pre Grant Publications for class 257 subclass 420][List of Patents for class 257 subclass 420]420 Subclass 420 indent level is 2 Means to reduce sensitivity to physical deformation
[List of Pre Grant Publications for class 257 subclass 421][List of Patents for class 257 subclass 421]421 Subclass 421 indent level is 1 Magnetic field
 [List of Pre Grant Publications for class 257 subclass 422][List of Patents for class 257 subclass 422]422 Subclass 422 indent level is 2 With magnetic field directing means (e.g., shield, pole piece, etc.)
 [List of Pre Grant Publications for class 257 subclass 423][List of Patents for class 257 subclass 423]423 Subclass 423 indent level is 2 Bipolar transistor magnetic field sensor (e.g., lateral bipolar transistor)
 [List of Pre Grant Publications for class 257 subclass 424][List of Patents for class 257 subclass 424]424 Subclass 424 indent level is 2 Sensor with region of high carrier recombination (e.g., magnetodiode with carriers deflected to recombination region by magnetic field)
 [List of Pre Grant Publications for class 257 subclass 425][List of Patents for class 257 subclass 425]425 Subclass 425 indent level is 2 Magnetic field detector using compound semiconductor material (e.g., GaAs, InSb, etc.)
 [List of Pre Grant Publications for class 257 subclass 426][List of Patents for class 257 subclass 426]426 Subclass 426 indent level is 2 Differential output (e.g., with offset adjustment means or with means to reduce temperature sensitivity)
 [List of Pre Grant Publications for class 257 subclass 427][List of Patents for class 257 subclass 427]427 Subclass 427 indent level is 2 Magnetic field sensor in integrated circuit (e.g., in bipolar transistor integrated circuit)
[List of Pre Grant Publications for class 257 subclass 428][List of Patents for class 257 subclass 428]428 Subclass 428 indent level is 1 Electromagnetic or particle radiation
[List of Pre Grant Publications for class 257 subclass 429][List of Patents for class 257 subclass 429]429 Subclass 429 indent level is 2 Charged or elementary particles
[List of Pre Grant Publications for class 257 subclass 431][List of Patents for class 257 subclass 431]431 Subclass 431 indent level is 2 Light
 [List of Pre Grant Publications for class 257 subclass 432][List of Patents for class 257 subclass 432]432 Subclass 432 indent level is 3 With optical element
[List of Pre Grant Publications for class 257 subclass 433][List of Patents for class 257 subclass 433]433 Subclass 433 indent level is 3 With housing or encapsulation
 [List of Pre Grant Publications for class 257 subclass 435][List of Patents for class 257 subclass 435]435 Subclass 435 indent level is 3 With optical shield or mask means
[List of Pre Grant Publications for class 257 subclass 436][List of Patents for class 257 subclass 436]436 Subclass 436 indent level is 3 With means for increasing light absorption (e.g., redirection of unabsorbed light)
 [List of Pre Grant Publications for class 257 subclass 438][List of Patents for class 257 subclass 438]438 Subclass 438 indent level is 3 Avalanche junction
 [List of Pre Grant Publications for class 257 subclass 439][List of Patents for class 257 subclass 439]439 Subclass 439 indent level is 3 Containing dopant adapted for photoionization
 [List of Pre Grant Publications for class 257 subclass 440][List of Patents for class 257 subclass 440]440 Subclass 440 indent level is 3 With different sensor portions responsive to different wavelengths (e.g., color imager)
[List of Pre Grant Publications for class 257 subclass 441][List of Patents for class 257 subclass 441]441 Subclass 441 indent level is 3 Narrow band gap semiconductor (<<1eV) (e.g., PbSnTe)
[List of Pre Grant Publications for class 257 subclass 443][List of Patents for class 257 subclass 443]443 Subclass 443 indent level is 3 Matrix or array (e.g., single line arrays)
[List of Pre Grant Publications for class 257 subclass 449][List of Patents for class 257 subclass 449]449 Subclass 449 indent level is 3 Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO 2 , indium tin oxide))
 [List of Pre Grant Publications for class 257 subclass 458][List of Patents for class 257 subclass 458]458 Subclass 458 indent level is 3 PIN detector, including combinations with non-light responsive active devices
 [List of Pre Grant Publications for class 257 subclass 459][List of Patents for class 257 subclass 459]459 Subclass 459 indent level is 3 With particular contact geometry (e.g., ring or grid, or bonding pad arrangement)
 [List of Pre Grant Publications for class 257 subclass 460][List of Patents for class 257 subclass 460]460 Subclass 460 indent level is 3 With backside illumination (e.g., with a thinned central area or non-absorbing substrate)
[List of Pre Grant Publications for class 257 subclass 461][List of Patents for class 257 subclass 461]461 Subclass 461 indent level is 3 Light responsive pn junction
 [List of Pre Grant Publications for class 257 subclass 466][List of Patents for class 257 subclass 466]466 Subclass 466 indent level is 3 External physical configuration of semiconductor (e.g., mesas, grooves)
[List of Pre Grant Publications for class 257 subclass 467][List of Patents for class 257 subclass 467]467 Subclass 467 indent level is 1 Temperature
 [List of Pre Grant Publications for class 257 subclass 468][List of Patents for class 257 subclass 468]468 Subclass 468 indent level is 2 Semiconductor device operated at cryogenic temperature
 [List of Pre Grant Publications for class 257 subclass 469][List of Patents for class 257 subclass 469]469 Subclass 469 indent level is 2 With means to reduce temperature sensitivity (e.g., reduction of temperature sensitivity of junction breakdown voltage by using a compensating element)
 [List of Pre Grant Publications for class 257 subclass 470][List of Patents for class 257 subclass 470]470 Subclass 470 indent level is 2 Pn junction adapted as temperature sensor
[List of Pre Grant Publications for class 257 subclass 471][List of Patents for class 257 subclass 471]471 SCHOTTKY BARRIER
[List of Pre Grant Publications for class 257 subclass 472][List of Patents for class 257 subclass 472]472 Subclass 472 indent level is 1 To compound semiconductor
 [List of Pre Grant Publications for class 257 subclass 473][List of Patents for class 257 subclass 473]473 Subclass 473 indent level is 2 With specified Schottky metal
 [List of Pre Grant Publications for class 257 subclass 474][List of Patents for class 257 subclass 474]474 Subclass 474 indent level is 1 As active junction in bipolar transistor (e.g., Schottky collector)
 [List of Pre Grant Publications for class 257 subclass 475][List of Patents for class 257 subclass 475]475 Subclass 475 indent level is 1 With doping profile to adjust barrier height
[List of Pre Grant Publications for class 257 subclass 476][List of Patents for class 257 subclass 476]476 Subclass 476 indent level is 1 In integrated structure
[List of Pre Grant Publications for class 257 subclass 477][List of Patents for class 257 subclass 477]477 Subclass 477 indent level is 2 With bipolar transistor
 [List of Pre Grant Publications for class 257 subclass 480][List of Patents for class 257 subclass 480]480 Subclass 480 indent level is 1 In voltage variable capacitance diode
[List of Pre Grant Publications for class 257 subclass 481][List of Patents for class 257 subclass 481]481 Subclass 481 indent level is 1 Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts)
 [List of Pre Grant Publications for class 257 subclass 482][List of Patents for class 257 subclass 482]482 Subclass 482 indent level is 2 Microwave transit time device (e.g., IMPATT diode)
[List of Pre Grant Publications for class 257 subclass 483][List of Patents for class 257 subclass 483]483 Subclass 483 indent level is 1 With means to prevent edge breakdown
 [List of Pre Grant Publications for class 257 subclass 484][List of Patents for class 257 subclass 484]484 Subclass 484 indent level is 2 Guard ring
[List of Pre Grant Publications for class 257 subclass 485][List of Patents for class 257 subclass 485]485 Subclass 485 indent level is 1 Specified materials
 [List of Pre Grant Publications for class 257 subclass 486][List of Patents for class 257 subclass 486]486 Subclass 486 indent level is 2 Layered (e.g., a diffusion barrier material layer or a silicide layer or a precious metal layer)
[List of Pre Grant Publications for class 257 subclass 487][List of Patents for class 257 subclass 487]487 WITH MEANS TO INCREASE BREAKDOWN VOLTAGE THRESHOLD
[List of Pre Grant Publications for class 257 subclass 488][List of Patents for class 257 subclass 488]488 Subclass 488 indent level is 1 Field relief electrode
 [List of Pre Grant Publications for class 257 subclass 489][List of Patents for class 257 subclass 489]489 Subclass 489 indent level is 2 Resistive
 [List of Pre Grant Publications for class 257 subclass 490][List of Patents for class 257 subclass 490]490 Subclass 490 indent level is 2 Combined with floating pn junction guard region
[List of Pre Grant Publications for class 257 subclass 491][List of Patents for class 257 subclass 491]491 Subclass 491 indent level is 1 In integrated circuit
 [List of Pre Grant Publications for class 257 subclass 492][List of Patents for class 257 subclass 492]492 Subclass 492 indent level is 2 With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., RESURF devices)
 [List of Pre Grant Publications for class 257 subclass 493][List of Patents for class 257 subclass 493]493 Subclass 493 indent level is 1 With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., RESURF devices)
 [List of Pre Grant Publications for class 257 subclass 494][List of Patents for class 257 subclass 494]494 Subclass 494 indent level is 1 Reverse-biased pn junction guard region
 [List of Pre Grant Publications for class 257 subclass 495][List of Patents for class 257 subclass 495]495 Subclass 495 indent level is 1 Floating pn junction guard region
 [List of Pre Grant Publications for class 257 subclass 496][List of Patents for class 257 subclass 496]496 Subclass 496 indent level is 1 With physical configuration of semiconductor surface to reduce electric field (e.g., reverse bevels, double bevels, stepped mesas, etc.)
[List of Pre Grant Publications for class 257 subclass 497][List of Patents for class 257 subclass 497]497 PUNCHTHROUGH STRUCTURE DEVICE (E.G., PUNCHTHROUGH TRANSISTOR, CAMEL BARRIER DIODE)
 [List of Pre Grant Publications for class 257 subclass 498][List of Patents for class 257 subclass 498]498 Subclass 498 indent level is 1 Punchthrough region fully depleted at zero external applied bias voltage (e.g., camel barrier or planar doped barrier devices, or so-called "Bipolar SIT" devices)
[List of Pre Grant Publications for class 257 subclass 499][List of Patents for class 257 subclass 499]499 INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS
[List of Pre Grant Publications for class 257 subclass 500][List of Patents for class 257 subclass 500]500 Subclass 500 indent level is 1 Including high voltage or high power devices isolated from low voltage or low power devices in the same integrated circuit
 [List of Pre Grant Publications for class 257 subclass 501][List of Patents for class 257 subclass 501]501 Subclass 501 indent level is 2 Including dielectric isolation means
 [List of Pre Grant Publications for class 257 subclass 502][List of Patents for class 257 subclass 502]502 Subclass 502 indent level is 2 High power or high voltage device extends completely through semiconductor substrate (e.g., backside collector contact)
 [List of Pre Grant Publications for class 257 subclass 503][List of Patents for class 257 subclass 503]503 Subclass 503 indent level is 1 With contact or metallization configuration to reduce parasitic coupling (e.g., separate ground pads for different parts of integrated circuit)
 [List of Pre Grant Publications for class 257 subclass 504][List of Patents for class 257 subclass 504]504 Subclass 504 indent level is 1 Including means for establishing a depletion region throughout a semiconductor layer for isolating devices in different portions of the layer (e.g., "JFET" isolation)
 [List of Pre Grant Publications for class 257 subclass 505][List of Patents for class 257 subclass 505]505 Subclass 505 indent level is 1 With polycrystalline semiconductor isolation region in direct contact with single crystal active semiconductor material
[List of Pre Grant Publications for class 257 subclass 506][List of Patents for class 257 subclass 506]506 Subclass 506 indent level is 1 Including dielectric isolation means
 [List of Pre Grant Publications for class 257 subclass 507][List of Patents for class 257 subclass 507]507 Subclass 507 indent level is 2 With single crystal insulating substrate (e.g., sapphire)
 [List of Pre Grant Publications for class 257 subclass 508][List of Patents for class 257 subclass 508]508 Subclass 508 indent level is 2 With metallic conductor within isolating dielectric or between semiconductor and isolating dielectric (e.g., metal shield layer or internal connection layer)
[List of Pre Grant Publications for class 257 subclass 509][List of Patents for class 257 subclass 509]509 Subclass 509 indent level is 2 Combined with pn junction isolation (e.g., isoplanar, LOCOS)
 [List of Pre Grant Publications for class 257 subclass 522][List of Patents for class 257 subclass 522]522 Subclass 522 indent level is 2 Air isolation (e.g., beam lead supported semiconductor islands)
 [List of Pre Grant Publications for class 257 subclass 523][List of Patents for class 257 subclass 523]523 Subclass 523 indent level is 2 Isolation by region of intrinsic (undoped) semiconductor material (e.g., including region physically damaged by proton bombardment)
[List of Pre Grant Publications for class 257 subclass 524][List of Patents for class 257 subclass 524]524 Subclass 524 indent level is 2 Full dielectric isolation with polycrystalline semiconductor substrate
[List of Pre Grant Publications for class 257 subclass 526][List of Patents for class 257 subclass 526]526 Subclass 526 indent level is 2 With bipolar transistor structure
[List of Pre Grant Publications for class 257 subclass 528][List of Patents for class 257 subclass 528]528 Subclass 528 indent level is 1 Passive components in ICs
[List of Pre Grant Publications for class 257 subclass 529][List of Patents for class 257 subclass 529]529 Subclass 529 indent level is 2 Including programmable passive component (e.g., fuse)
 [List of Pre Grant Publications for class 257 subclass 531][List of Patents for class 257 subclass 531]531 Subclass 531 indent level is 2 Including inductive element
[List of Pre Grant Publications for class 257 subclass 532][List of Patents for class 257 subclass 532]532 Subclass 532 indent level is 2 Including capacitor component
[List of Pre Grant Publications for class 257 subclass 536][List of Patents for class 257 subclass 536]536 Subclass 536 indent level is 2 Including resistive element
[List of Pre Grant Publications for class 257 subclass 544][List of Patents for class 257 subclass 544]544 Subclass 544 indent level is 1 With pn junction isolation
 [List of Pre Grant Publications for class 257 subclass 545][List of Patents for class 257 subclass 545]545 Subclass 545 indent level is 2 With means to control isolation junction capacitance (e.g., lightly doped layer at isolation junction to increase depletion layer width)
 [List of Pre Grant Publications for class 257 subclass 546][List of Patents for class 257 subclass 546]546 Subclass 546 indent level is 2 With structural means to protect against excess or reversed polarity voltage
 [List of Pre Grant Publications for class 257 subclass 547][List of Patents for class 257 subclass 547]547 Subclass 547 indent level is 2 With structural means to control parasitic transistor action or leakage current
 [List of Pre Grant Publications for class 257 subclass 548][List of Patents for class 257 subclass 548]548 Subclass 548 indent level is 2 At least three regions of alternating conductivity types with dopant concentration gradients decreasing from surface of semiconductor (e.g., "triple-diffused" integrated circuit)
 [List of Pre Grant Publications for class 257 subclass 549][List of Patents for class 257 subclass 549]549 Subclass 549 indent level is 2 With substrate and lightly doped surface layer of same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit)
 [List of Pre Grant Publications for class 257 subclass 550][List of Patents for class 257 subclass 550]550 Subclass 550 indent level is 2 With lightly doped surface layer of one conductivity type on substrate of opposite conductivity type, having plural heavily doped portions of the one conductivity type between the layer and substrate, different ones of the heavily doped portions having differing depths or physical extent
 [List of Pre Grant Publications for class 257 subclass 551][List of Patents for class 257 subclass 551]551 Subclass 551 indent level is 2 Including voltage reference element (e.g., avalanche diode, so-called "Zener diode" with breakdown voltage greater than 6 volts or with positive temperature coefficient of breakdown voltage)
[List of Pre Grant Publications for class 257 subclass 552][List of Patents for class 257 subclass 552]552 Subclass 552 indent level is 2 With bipolar transistor structure
[List of Pre Grant Publications for class 257 subclass 557][List of Patents for class 257 subclass 557]557 Subclass 557 indent level is 1 Lateral bipolar transistor structure
 [List of Pre Grant Publications for class 257 subclass 558][List of Patents for class 257 subclass 558]558 Subclass 558 indent level is 2 With base region doping concentration step or gradient or with means to increase current gain
 [List of Pre Grant Publications for class 257 subclass 559][List of Patents for class 257 subclass 559]559 Subclass 559 indent level is 2 With active region formed along groove or exposed edge in semiconductor
[List of Pre Grant Publications for class 257 subclass 560][List of Patents for class 257 subclass 560]560 Subclass 560 indent level is 2 With multiple collectors or emitters
[List of Pre Grant Publications for class 257 subclass 563][List of Patents for class 257 subclass 563]563 Subclass 563 indent level is 1 With multiple separately connected emitter, collector, or base regions in same transistor structure
 [List of Pre Grant Publications for class 257 subclass 564][List of Patents for class 257 subclass 564]564 Subclass 564 indent level is 2 Multiple base or collector regions
[List of Pre Grant Publications for class 257 subclass 565][List of Patents for class 257 subclass 565]565 BIPOLAR TRANSISTOR STRUCTURE
[List of Pre Grant Publications for class 257 subclass 566][List of Patents for class 257 subclass 566]566 Subclass 566 indent level is 1 Plural non-isolated transistor structures in same structure
[List of Pre Grant Publications for class 257 subclass 567][List of Patents for class 257 subclass 567]567 Subclass 567 indent level is 2 Darlington configuration (i.e., emitter to collector current of input transistor supplied to base region of output transistor)
[List of Pre Grant Publications for class 257 subclass 574][List of Patents for class 257 subclass 574]574 Subclass 574 indent level is 2 Complementary transistors share common active region (e.g., integrated injection logic, I 2 L)
 [List of Pre Grant Publications for class 257 subclass 577][List of Patents for class 257 subclass 577]577 Subclass 577 indent level is 1 Including additional component in same, non-isolated structure (e.g., transistor with diode, transistor with resistor, etc.)
[List of Pre Grant Publications for class 257 subclass 578][List of Patents for class 257 subclass 578]578 Subclass 578 indent level is 1 With enlarged emitter area (e.g., power device)
[List of Pre Grant Publications for class 257 subclass 579][List of Patents for class 257 subclass 579]579 Subclass 579 indent level is 2 With separate emitter areas connected in parallel
 [List of Pre Grant Publications for class 257 subclass 582][List of Patents for class 257 subclass 582]582 Subclass 582 indent level is 2 With current ballasting means (e.g., emitter ballasting resistors or base current ballasting resistors)
 [List of Pre Grant Publications for class 257 subclass 583][List of Patents for class 257 subclass 583]583 Subclass 583 indent level is 2 With means to reduce transistor action in selected portions of transistor (e.g., heavy base region doping under central web of emitter to prevent secondary breakdown)
 [List of Pre Grant Publications for class 257 subclass 584][List of Patents for class 257 subclass 584]584 Subclass 584 indent level is 2 With housing or contact (i.e., electrode) means
 [List of Pre Grant Publications for class 257 subclass 585][List of Patents for class 257 subclass 585]585 Subclass 585 indent level is 1 With means to increase inverse gain
 [List of Pre Grant Publications for class 257 subclass 586][List of Patents for class 257 subclass 586]586 Subclass 586 indent level is 1 With non-planar semiconductor surface (e.g., groove, mesa, bevel, etc.)
[List of Pre Grant Publications for class 257 subclass 587][List of Patents for class 257 subclass 587]587 Subclass 587 indent level is 1 With specified electrode means
 [List of Pre Grant Publications for class 257 subclass 588][List of Patents for class 257 subclass 588]588 Subclass 588 indent level is 2 Including polycrystalline semiconductor as connection
 [List of Pre Grant Publications for class 257 subclass 589][List of Patents for class 257 subclass 589]589 Subclass 589 indent level is 1 Avalanche transistor
 [List of Pre Grant Publications for class 257 subclass 590][List of Patents for class 257 subclass 590]590 Subclass 590 indent level is 1 With means to reduce minority carrier lifetime (e.g., region of deep level dopant or region of crystal damage)
 [List of Pre Grant Publications for class 257 subclass 591][List of Patents for class 257 subclass 591]591 Subclass 591 indent level is 1 With emitter region having specified doping concentration profile (e.g., high-low concentration step)
 [List of Pre Grant Publications for class 257 subclass 592][List of Patents for class 257 subclass 592]592 Subclass 592 indent level is 1 With base region having specified doping concentration profile or specified configuration (e.g., inactive base more heavily doped than active base or base region has constant doping concentration portion (e.g., epitaxial base))
 [List of Pre Grant Publications for class 257 subclass 593][List of Patents for class 257 subclass 593]593 Subclass 593 indent level is 1 With means to increase current gain or operating frequency
 [List of Pre Grant Publications for class 257 subclass 594][List of Patents for class 257 subclass 594]594 WITH GROOVE TO DEFINE PLURAL DIODES
[List of Pre Grant Publications for class 257 subclass 595][List of Patents for class 257 subclass 595]595 VOLTAGE VARIABLE CAPACITANCE DEVICE
[List of Pre Grant Publications for class 257 subclass 596][List of Patents for class 257 subclass 596]596 Subclass 596 indent level is 1 With specified dopant profile
 [List of Pre Grant Publications for class 257 subclass 597][List of Patents for class 257 subclass 597]597 Subclass 597 indent level is 2 Retrograde dopant profile (e.g., dopant concentration decreases with distance from rectifying junction)
 [List of Pre Grant Publications for class 257 subclass 598][List of Patents for class 257 subclass 598]598 Subclass 598 indent level is 1 With plural junctions whose depletion regions merge to vary voltage dependence
 [List of Pre Grant Publications for class 257 subclass 599][List of Patents for class 257 subclass 599]599 Subclass 599 indent level is 1 With means to increase active junction area (e.g., grooved or convoluted surface)
 [List of Pre Grant Publications for class 257 subclass 600][List of Patents for class 257 subclass 600]600 Subclass 600 indent level is 1 With physical configuration to vary voltage dependence (e.g., mesa)
 [List of Pre Grant Publications for class 257 subclass 601][List of Patents for class 257 subclass 601]601 Subclass 601 indent level is 1 Plural diodes in same non-isolated structure, or device having three or more terminals
 [List of Pre Grant Publications for class 257 subclass 602][List of Patents for class 257 subclass 602]602 Subclass 602 indent level is 1 With specified housing or contact
[List of Pre Grant Publications for class 257 subclass 603][List of Patents for class 257 subclass 603]603 AVALANCHE DIODE (E.G., SO-CALLED "ZENER" DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS)
 [List of Pre Grant Publications for class 257 subclass 604][List of Patents for class 257 subclass 604]604 Subclass 604 indent level is 1 Microwave transit time device (e.g., IMPATT diode)
[List of Pre Grant Publications for class 257 subclass 605][List of Patents for class 257 subclass 605]605 Subclass 605 indent level is 1 With means to limit area of breakdown (e.g., guard ring having higher breakdown voltage)
 [List of Pre Grant Publications for class 257 subclass 606][List of Patents for class 257 subclass 606]606 Subclass 606 indent level is 2 Subsurface breakdown
[List of Pre Grant Publications for class 257 subclass 607][List of Patents for class 257 subclass 607]607 WITH SPECIFIED DOPANT (E.G., PLURAL DOPANTS OF SAME CONDUCTIVITY IN SAME REGION)
 [List of Pre Grant Publications for class 257 subclass 608][List of Patents for class 257 subclass 608]608 Subclass 608 indent level is 1 Switching device based on filling and emptying of deep energy levels
 [List of Pre Grant Publications for class 257 subclass 609][List of Patents for class 257 subclass 609]609 Subclass 609 indent level is 1 For compound semiconductor (e.g., deep level dopant)
[List of Pre Grant Publications for class 257 subclass 610][List of Patents for class 257 subclass 610]610 Subclass 610 indent level is 1 Deep level dopant
 [List of Pre Grant Publications for class 257 subclass 611][List of Patents for class 257 subclass 611]611 Subclass 611 indent level is 2 With specified distribution (e.g., laterally localized, with specified concentration distribution or gradient)
 [List of Pre Grant Publications for class 257 subclass 612][List of Patents for class 257 subclass 612]612 Subclass 612 indent level is 2 Deep level dopant other than gold or platinum
[List of Pre Grant Publications for class 257 subclass 613][List of Patents for class 257 subclass 613]613 INCLUDING SEMICONDUCTOR MATERIAL OTHER THAN SILICON OR GALLIUM ARSENIDE (GAAS) (E.G., PB X SN 1-X TE)
 [List of Pre Grant Publications for class 257 subclass 614][List of Patents for class 257 subclass 614]614 Subclass 614 indent level is 1 Group II-VI compound (e.g., CdTe, Hg x Cd 1-x Te)
 [List of Pre Grant Publications for class 257 subclass 615][List of Patents for class 257 subclass 615]615 Subclass 615 indent level is 1 Group III-V compound (e.g., InP)
 [List of Pre Grant Publications for class 257 subclass 616][List of Patents for class 257 subclass 616]616 Subclass 616 indent level is 1 Containing germanium, Ge
 [List of Pre Grant Publications for class 257 subclass 617][List of Patents for class 257 subclass 617]617 INCLUDING REGION CONTAINING CRYSTAL DAMAGE
[List of Pre Grant Publications for class 257 subclass 618][List of Patents for class 257 subclass 618]618 PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.)
 [List of Pre Grant Publications for class 257 subclass 619][List of Patents for class 257 subclass 619]619 Subclass 619 indent level is 1 With thin active central semiconductor portion surrounded by thicker inactive shoulder (e.g., for mechanical support)
 [List of Pre Grant Publications for class 257 subclass 620][List of Patents for class 257 subclass 620]620 Subclass 620 indent level is 1 With peripheral feature due to separation of smaller semiconductor chip from larger wafer (e.g., scribe region, or means to prevent edge effects such as leakage current at peripheral chip separation area)
 [List of Pre Grant Publications for class 257 subclass 621][List of Patents for class 257 subclass 621]621 Subclass 621 indent level is 1 With electrical contact in hole in semiconductor (e.g., lead extends through semiconductor body)
 [List of Pre Grant Publications for class 257 subclass 622][List of Patents for class 257 subclass 622]622 Subclass 622 indent level is 1 Groove
[List of Pre Grant Publications for class 257 subclass 623][List of Patents for class 257 subclass 623]623 Subclass 623 indent level is 1 Mesa structure (e.g., including undercut or stepped mesa configuration or having constant slope taper)
 [List of Pre Grant Publications for class 257 subclass 624][List of Patents for class 257 subclass 624]624 Subclass 624 indent level is 2 With low resistance ohmic connection means along exposed mesa edge (e.g., contact or heavily doped region along exposed mesa to reduce "skin effect" losses in microwave diode)
 [List of Pre Grant Publications for class 257 subclass 625][List of Patents for class 257 subclass 625]625 Subclass 625 indent level is 2 Semiconductor body including mesa is intimately bonded to thick electrical and/or thermal conductor member of larger lateral extent than semiconductor body (e.g., "plated heat sink" microwave diode)
 [List of Pre Grant Publications for class 257 subclass 626][List of Patents for class 257 subclass 626]626 Subclass 626 indent level is 2 Combined with passivating coating
[List of Pre Grant Publications for class 257 subclass 627][List of Patents for class 257 subclass 627]627 Subclass 627 indent level is 1 With specified crystal plane or axis
 [List of Pre Grant Publications for class 257 subclass 628][List of Patents for class 257 subclass 628]628 Subclass 628 indent level is 2 Major crystal plane or axis other than (100), (110), or (111) (e.g., (731) axis, crystal plane several degrees from (100) toward (011), etc.)
[List of Pre Grant Publications for class 257 subclass 629][List of Patents for class 257 subclass 629]629 WITH MEANS TO CONTROL SURFACE EFFECTS
 [List of Pre Grant Publications for class 257 subclass 630][List of Patents for class 257 subclass 630]630 Subclass 630 indent level is 1 With inversion-preventing shield electrode
 [List of Pre Grant Publications for class 257 subclass 631][List of Patents for class 257 subclass 631]631 Subclass 631 indent level is 1 In compound semiconductor material (e.g., GaAs)
[List of Pre Grant Publications for class 257 subclass 632][List of Patents for class 257 subclass 632]632 Subclass 632 indent level is 1 Insulating coating
 [List of Pre Grant Publications for class 257 subclass 633][List of Patents for class 257 subclass 633]633 Subclass 633 indent level is 2 With thermal expansion compensation (e.g., thermal expansion of glass passivant matched to that of semiconductor)
 [List of Pre Grant Publications for class 257 subclass 634][List of Patents for class 257 subclass 634]634 Subclass 634 indent level is 2 Insulating coating of glass composition containing component to adjust melting or softening temperature (e.g., low melting point glass)
[List of Pre Grant Publications for class 257 subclass 635][List of Patents for class 257 subclass 635]635 Subclass 635 indent level is 2 Multiple layers
 [List of Pre Grant Publications for class 257 subclass 646][List of Patents for class 257 subclass 646]646 Subclass 646 indent level is 2 Coating of semi-insulating material (e.g., amorphous silicon or silicon-rich silicon oxide)
[List of Pre Grant Publications for class 257 subclass 647][List of Patents for class 257 subclass 647]647 Subclass 647 indent level is 2 Insulating layer recessed into semiconductor surface (e.g., LOCOS oxide)
 [List of Pre Grant Publications for class 257 subclass 649][List of Patents for class 257 subclass 649]649 Subclass 649 indent level is 2 Insulating layer of silicon nitride or silicon oxynitride
 [List of Pre Grant Publications for class 257 subclass 650][List of Patents for class 257 subclass 650]650 Subclass 650 indent level is 2 Insulating layer of glass
 [List of Pre Grant Publications for class 257 subclass 651][List of Patents for class 257 subclass 651]651 Subclass 651 indent level is 2 Details of insulating layer electrical charge (e.g., negative insulator layer charge)
 [List of Pre Grant Publications for class 257 subclass 652][List of Patents for class 257 subclass 652]652 Subclass 652 indent level is 1 Channel stop layer
[List of Pre Grant Publications for class 257 subclass 653][List of Patents for class 257 subclass 653]653 WITH SPECIFIED SHAPE OF PN JUNCTION
 [List of Pre Grant Publications for class 257 subclass 654][List of Patents for class 257 subclass 654]654 Subclass 654 indent level is 1 Interdigitated pn junction or more heavily doped side of junction is concave
[List of Pre Grant Publications for class 257 subclass 655][List of Patents for class 257 subclass 655]655 WITH SPECIFIED IMPURITY CONCENTRATION GRADIENT
 [List of Pre Grant Publications for class 257 subclass 656][List of Patents for class 257 subclass 656]656 Subclass 656 indent level is 1 With high resistivity (e.g., "intrinsic") layer between P and N layers (e.g., PIN diode)
 [List of Pre Grant Publications for class 257 subclass 657][List of Patents for class 257 subclass 657]657 Subclass 657 indent level is 1 Stepped profile
 [List of Pre Grant Publications for class 257 subclass 658][List of Patents for class 257 subclass 658]658 PLATE TYPE RECTIFIER ARRAY
[List of Pre Grant Publications for class 257 subclass 659][List of Patents for class 257 subclass 659]659 WITH SHIELDING (E.G., ELECTRICAL OR MAGNETIC SHIELDING, OR FROM ELECTROMAGNETIC RADIATION OR CHARGED PARTICLES)
 [List of Pre Grant Publications for class 257 subclass 660][List of Patents for class 257 subclass 660]660 Subclass 660 indent level is 1 With means to shield device contained in housing or package from charged particles (e.g., alpha particles) or highly ionizing radiation (i.e., hard X-rays or shorter wavelength)
[List of Pre Grant Publications for class 257 subclass 661][List of Patents for class 257 subclass 661]661 SUPERCONDUCTIVE CONTACT OR LEAD
 [List of Pre Grant Publications for class 257 subclass 662][List of Patents for class 257 subclass 662]662 Subclass 662 indent level is 1 Transmission line or shielded
 [List of Pre Grant Publications for class 257 subclass 663][List of Patents for class 257 subclass 663]663 Subclass 663 indent level is 1 On integrated circuit
 [List of Pre Grant Publications for class 257 subclass 664][List of Patents for class 257 subclass 664]664 TRANSMISSION LINE LEAD (E.G., STRIPLINE, COAX, ETC.)
 [List of Pre Grant Publications for class 257 subclass 665][List of Patents for class 257 subclass 665]665 CONTACTS OR LEADS INCLUDING FUSIBLE LINK MEANS OR NOISE SUPPRESSION MEANS
[List of Pre Grant Publications for class 257 subclass 666][List of Patents for class 257 subclass 666]666 LEAD FRAME
 [List of Pre Grant Publications for class 257 subclass 667][List of Patents for class 257 subclass 667]667 Subclass 667 indent level is 1 With dam or vent for encapsulant
 [List of Pre Grant Publications for class 257 subclass 668][List of Patents for class 257 subclass 668]668 Subclass 668 indent level is 1 On insulating carrier other than a printed circuit board
 [List of Pre Grant Publications for class 257 subclass 669][List of Patents for class 257 subclass 669]669 Subclass 669 indent level is 1 With stress relief
[List of Pre Grant Publications for class 257 subclass 670][List of Patents for class 257 subclass 670]670 Subclass 670 indent level is 1 With separate tie bar element or plural tie bars
 [List of Pre Grant Publications for class 257 subclass 671][List of Patents for class 257 subclass 671]671 Subclass 671 indent level is 2 Of insulating material
 [List of Pre Grant Publications for class 257 subclass 672][List of Patents for class 257 subclass 672]672 Subclass 672 indent level is 1 Small lead frame (e.g., "spider" frame) for connecting a large lead frame to a semiconductor chip
 [List of Pre Grant Publications for class 257 subclass 673][List of Patents for class 257 subclass 673]673 Subclass 673 indent level is 1 With bumps on ends of lead fingers to connect to semiconductor
 [List of Pre Grant Publications for class 257 subclass 674][List of Patents for class 257 subclass 674]674 Subclass 674 indent level is 1 With means for controlling lead tension
 [List of Pre Grant Publications for class 257 subclass 675][List of Patents for class 257 subclass 675]675 Subclass 675 indent level is 1 With heat sink means
 [List of Pre Grant Publications for class 257 subclass 676][List of Patents for class 257 subclass 676]676 Subclass 676 indent level is 1 With structure for mounting semiconductor chip to lead frame (e.g., configuration of die bonding flag, absence of a die bonding flag, recess for LED)
 [List of Pre Grant Publications for class 257 subclass 677][List of Patents for class 257 subclass 677]677 Subclass 677 indent level is 1 Of specified material other than copper (e.g., Kovar (T.M.))
[List of Pre Grant Publications for class 257 subclass 678][List of Patents for class 257 subclass 678]678 HOUSING OR PACKAGE
 [List of Pre Grant Publications for class 257 subclass 679][List of Patents for class 257 subclass 679]679 Subclass 679 indent level is 1 Smart (e.g., credit) card package
[List of Pre Grant Publications for class 257 subclass 680][List of Patents for class 257 subclass 680]680 Subclass 680 indent level is 1 With window means
 [List of Pre Grant Publications for class 257 subclass 681][List of Patents for class 257 subclass 681]681 Subclass 681 indent level is 2 For erasing EPROM
 [List of Pre Grant Publications for class 257 subclass 682][List of Patents for class 257 subclass 682]682 Subclass 682 indent level is 1 With desiccant, getter, or gas filling
 [List of Pre Grant Publications for class 257 subclass 683][List of Patents for class 257 subclass 683]683 Subclass 683 indent level is 1 With means to prevent explosion of package
 [List of Pre Grant Publications for class 257 subclass 684][List of Patents for class 257 subclass 684]684 Subclass 684 indent level is 1 With semiconductor element forming part (e.g., base, of housing)
[List of Pre Grant Publications for class 257 subclass 685][List of Patents for class 257 subclass 685]685 Subclass 685 indent level is 1 Multiple housings
 [List of Pre Grant Publications for class 257 subclass 686][List of Patents for class 257 subclass 686]686 Subclass 686 indent level is 2 Stacked arrangement
 [List of Pre Grant Publications for class 257 subclass 687][List of Patents for class 257 subclass 687]687 Subclass 687 indent level is 1 Housing or package filled with solid or liquid electrically insulating material
[List of Pre Grant Publications for class 257 subclass 688][List of Patents for class 257 subclass 688]688 Subclass 688 indent level is 1 With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, e.g., ring
 [List of Pre Grant Publications for class 257 subclass 689][List of Patents for class 257 subclass 689]689 Subclass 689 indent level is 2 Rigid electrode portion
[List of Pre Grant Publications for class 257 subclass 690][List of Patents for class 257 subclass 690]690 Subclass 690 indent level is 1 With contact or lead
 [List of Pre Grant Publications for class 257 subclass 691][List of Patents for class 257 subclass 691]691 Subclass 691 indent level is 2 Having power distribution means (e.g., bus structure)
[List of Pre Grant Publications for class 257 subclass 692][List of Patents for class 257 subclass 692]692 Subclass 692 indent level is 2 With particular lead geometry
[List of Pre Grant Publications for class 257 subclass 698][List of Patents for class 257 subclass 698]698 Subclass 698 indent level is 2 With specific electrical feedthrough structure
 [List of Pre Grant Publications for class 257 subclass 700][List of Patents for class 257 subclass 700]700 Subclass 700 indent level is 2 Multiple contact layers separated from each other by insulator means and forming part of a package or housing (e.g., plural ceramic layer package)
[List of Pre Grant Publications for class 257 subclass 701][List of Patents for class 257 subclass 701]701 Subclass 701 indent level is 1 Insulating material
 [List of Pre Grant Publications for class 257 subclass 702][List of Patents for class 257 subclass 702]702 Subclass 702 indent level is 2 Of insulating material other than ceramic
 [List of Pre Grant Publications for class 257 subclass 703][List of Patents for class 257 subclass 703]703 Subclass 703 indent level is 2 Composite ceramic, or single ceramic with metal
 [List of Pre Grant Publications for class 257 subclass 704][List of Patents for class 257 subclass 704]704 Subclass 704 indent level is 2 Cap or lid
 [List of Pre Grant Publications for class 257 subclass 705][List of Patents for class 257 subclass 705]705 Subclass 705 indent level is 2 Of high thermal conductivity ceramic (e.g., BeO)
[List of Pre Grant Publications for class 257 subclass 706][List of Patents for class 257 subclass 706]706 Subclass 706 indent level is 2 With heat sink
[List of Pre Grant Publications for class 257 subclass 708][List of Patents for class 257 subclass 708]708 Subclass 708 indent level is 1 Entirely of metal except for feedthrough
 [List of Pre Grant Publications for class 257 subclass 709][List of Patents for class 257 subclass 709]709 Subclass 709 indent level is 2 With specified insulator to isolate device from housing
 [List of Pre Grant Publications for class 257 subclass 710][List of Patents for class 257 subclass 710]710 Subclass 710 indent level is 2 With specified means (e.g., lip) to seal base to cap
 [List of Pre Grant Publications for class 257 subclass 711][List of Patents for class 257 subclass 711]711 Subclass 711 indent level is 2 With raised portion of base for mounting semiconductor chip
[List of Pre Grant Publications for class 257 subclass 712][List of Patents for class 257 subclass 712]712 Subclass 712 indent level is 1 With provision for cooling the housing or its contents
 [List of Pre Grant Publications for class 257 subclass 713][List of Patents for class 257 subclass 713]713 Subclass 713 indent level is 2 For integrated circuit
[List of Pre Grant Publications for class 257 subclass 714][List of Patents for class 257 subclass 714]714 Subclass 714 indent level is 2 Liquid coolant
 [List of Pre Grant Publications for class 257 subclass 717][List of Patents for class 257 subclass 717]717 Subclass 717 indent level is 2 Isolation of cooling means (e.g., heat sink) by an electrically insulating element (e.g., spacer)
[List of Pre Grant Publications for class 257 subclass 718][List of Patents for class 257 subclass 718]718 Subclass 718 indent level is 2 Heat dissipating element held in place by clamping or spring means
 [List of Pre Grant Publications for class 257 subclass 720][List of Patents for class 257 subclass 720]720 Subclass 720 indent level is 2 Heat dissipating element has high thermal conductivity insert (e.g., copper slug in aluminum heat sink)
[List of Pre Grant Publications for class 257 subclass 721][List of Patents for class 257 subclass 721]721 Subclass 721 indent level is 2 With gas coolant
[List of Pre Grant Publications for class 257 subclass 723][List of Patents for class 257 subclass 723]723 Subclass 723 indent level is 1 For plural devices
 [List of Pre Grant Publications for class 257 subclass 724][List of Patents for class 257 subclass 724]724 Subclass 724 indent level is 2 With discrete components
[List of Pre Grant Publications for class 257 subclass 725][List of Patents for class 257 subclass 725]725 Subclass 725 indent level is 2 With electrical isolation means
 [List of Pre Grant Publications for class 257 subclass 727][List of Patents for class 257 subclass 727]727 Subclass 727 indent level is 1 Device held in place by clamping
 [List of Pre Grant Publications for class 257 subclass 728][List of Patents for class 257 subclass 728]728 Subclass 728 indent level is 1 For high frequency (e.g., microwave) device
 [List of Pre Grant Publications for class 257 subclass 729][List of Patents for class 257 subclass 729]729 Subclass 729 indent level is 1 Portion of housing of specific materials
 [List of Pre Grant Publications for class 257 subclass 730][List of Patents for class 257 subclass 730]730 Subclass 730 indent level is 1 Outside periphery of package having specified shape or configuration
[List of Pre Grant Publications for class 257 subclass 731][List of Patents for class 257 subclass 731]731 Subclass 731 indent level is 1 With housing mount
 [List of Pre Grant Publications for class 257 subclass 732][List of Patents for class 257 subclass 732]732 Subclass 732 indent level is 2 Flanged mount
 [List of Pre Grant Publications for class 257 subclass 733][List of Patents for class 257 subclass 733]733 Subclass 733 indent level is 2 Stud mount
[List of Pre Grant Publications for class 257 subclass 734][List of Patents for class 257 subclass 734]734 COMBINED WITH ELECTRICAL CONTACT OR LEAD
[List of Pre Grant Publications for class 257 subclass 735][List of Patents for class 257 subclass 735]735 Subclass 735 indent level is 1 Beam leads (i.e., leads that extend beyond the ends or sides of a chip component)
 [List of Pre Grant Publications for class 257 subclass 736][List of Patents for class 257 subclass 736]736 Subclass 736 indent level is 2 Layered
[List of Pre Grant Publications for class 257 subclass 737][List of Patents for class 257 subclass 737]737 Subclass 737 indent level is 1 Bump leads
 [List of Pre Grant Publications for class 257 subclass 738][List of Patents for class 257 subclass 738]738 Subclass 738 indent level is 2 Ball shaped
 [List of Pre Grant Publications for class 257 subclass 739][List of Patents for class 257 subclass 739]739 Subclass 739 indent level is 1 With textured surface
 [List of Pre Grant Publications for class 257 subclass 740][List of Patents for class 257 subclass 740]740 Subclass 740 indent level is 1 With means to prevent contact from penetrating shallow PN junction (e.g., prevention of aluminum "spiking")
[List of Pre Grant Publications for class 257 subclass 741][List of Patents for class 257 subclass 741]741 Subclass 741 indent level is 1 Of specified material other than unalloyed aluminum
[List of Pre Grant Publications for class 257 subclass 742][List of Patents for class 257 subclass 742]742 Subclass 742 indent level is 2 With a semiconductor conductivity substitution type dopant (e.g., germanium in the case of a gallium arsenide semiconductor) in a contact metal)
[List of Pre Grant Publications for class 257 subclass 744][List of Patents for class 257 subclass 744]744 Subclass 744 indent level is 2 For compound semiconductor material
 [List of Pre Grant Publications for class 257 subclass 746][List of Patents for class 257 subclass 746]746 Subclass 746 indent level is 2 Composite material (e.g., fibers or strands embedded in solid matrix)
[List of Pre Grant Publications for class 257 subclass 747][List of Patents for class 257 subclass 747]747 Subclass 747 indent level is 2 With thermal expansion matching of contact or lead material to semiconductor active device
 [List of Pre Grant Publications for class 257 subclass 749][List of Patents for class 257 subclass 749]749 Subclass 749 indent level is 2 At least portion of which is transparent to ultraviolet, visible or infrared light
[List of Pre Grant Publications for class 257 subclass 750][List of Patents for class 257 subclass 750]750 Subclass 750 indent level is 2 Layered
 [List of Pre Grant Publications for class 257 subclass 767][List of Patents for class 257 subclass 767]767 Subclass 767 indent level is 2 Resistive to electromigration or diffusion of the contact or lead material
[List of Pre Grant Publications for class 257 subclass 768][List of Patents for class 257 subclass 768]768 Subclass 768 indent level is 2 Refractory or platinum group metal or alloy or silicide thereof
 [List of Pre Grant Publications for class 257 subclass 771][List of Patents for class 257 subclass 771]771 Subclass 771 indent level is 2 Alloy containing aluminum
 [List of Pre Grant Publications for class 257 subclass 772][List of Patents for class 257 subclass 772]772 Subclass 772 indent level is 2 Solder composition
[List of Pre Grant Publications for class 257 subclass 773][List of Patents for class 257 subclass 773]773 Subclass 773 indent level is 1 Of specified configuration
 [List of Pre Grant Publications for class 257 subclass 774][List of Patents for class 257 subclass 774]774 Subclass 774 indent level is 2 Via (interconnection hole) shape
 [List of Pre Grant Publications for class 257 subclass 775][List of Patents for class 257 subclass 775]775 Subclass 775 indent level is 2 Varying width or thickness of conductor
 [List of Pre Grant Publications for class 257 subclass 776][List of Patents for class 257 subclass 776]776 Subclass 776 indent level is 2 Cross-over arrangement, component or structure
 [List of Pre Grant Publications for class 257 subclass 777][List of Patents for class 257 subclass 777]777 Subclass 777 indent level is 1 Chip mounted on chip
 [List of Pre Grant Publications for class 257 subclass 778][List of Patents for class 257 subclass 778]778 Subclass 778 indent level is 1 Flip chip
 [List of Pre Grant Publications for class 257 subclass 779][List of Patents for class 257 subclass 779]779 Subclass 779 indent level is 1 Solder wettable contact, lead, or bond
[List of Pre Grant Publications for class 257 subclass 780][List of Patents for class 257 subclass 780]780 Subclass 780 indent level is 1 Ball or nail head type contact, lead, or bond
 [List of Pre Grant Publications for class 257 subclass 781][List of Patents for class 257 subclass 781]781 Subclass 781 indent level is 2 Layered contact, lead or bond
[List of Pre Grant Publications for class 257 subclass 782][List of Patents for class 257 subclass 782]782 Subclass 782 indent level is 1 Die bond
 [List of Pre Grant Publications for class 257 subclass 783][List of Patents for class 257 subclass 783]783 Subclass 783 indent level is 2 With adhesive means
 [List of Pre Grant Publications for class 257 subclass 784][List of Patents for class 257 subclass 784]784 Subclass 784 indent level is 1 Wire contact, lead, or bond
 [List of Pre Grant Publications for class 257 subclass 785][List of Patents for class 257 subclass 785]785 Subclass 785 indent level is 1 By pressure alone
 [List of Pre Grant Publications for class 257 subclass 786][List of Patents for class 257 subclass 786]786 Subclass 786 indent level is 1 Configuration or pattern of bonds
[List of Pre Grant Publications for class 257 subclass 787][List of Patents for class 257 subclass 787]787 ENCAPSULATED
[List of Pre Grant Publications for class 257 subclass 788][List of Patents for class 257 subclass 788]788 Subclass 788 indent level is 1 With specified encapsulant
 [List of Pre Grant Publications for class 257 subclass 789][List of Patents for class 257 subclass 789]789 Subclass 789 indent level is 2 With specified filler material
 [List of Pre Grant Publications for class 257 subclass 790][List of Patents for class 257 subclass 790]790 Subclass 790 indent level is 2 Plural encapsulating layers
 [List of Pre Grant Publications for class 257 subclass 791][List of Patents for class 257 subclass 791]791 Subclass 791 indent level is 2 Including polysiloxane (e.g., silicone resin)
 [List of Pre Grant Publications for class 257 subclass 792][List of Patents for class 257 subclass 792]792 Subclass 792 indent level is 2 Including polyimide
 [List of Pre Grant Publications for class 257 subclass 793][List of Patents for class 257 subclass 793]793 Subclass 793 indent level is 2 Including epoxide
 [List of Pre Grant Publications for class 257 subclass 794][List of Patents for class 257 subclass 794]794 Subclass 794 indent level is 2 Including glass
 [List of Pre Grant Publications for class 257 subclass 795][List of Patents for class 257 subclass 795]795 Subclass 795 indent level is 1 With specified filler material
 [List of Pre Grant Publications for class 257 subclass 796][List of Patents for class 257 subclass 796]796 Subclass 796 indent level is 1 With heat sink embedded in encapsulant
 [List of Pre Grant Publications for class 257 subclass 797][List of Patents for class 257 subclass 797]797 ALIGNMENT MARKS
 [List of Pre Grant Publications for class 257 subclass 798][List of Patents for class 257 subclass 798]798 MISCELLANEOUS
 
E-SUBCLASSES
 
The following subclasses beginning with the letter E are E-subclasses. Each E-subclass corresponds in scope to a classification in a foreign classification system, for example, the European Classification system (ECLA). The foreign classification equivalent to an E-subclass is identified in the subclass definition. In addition to US documents classified in E-subclasses by US examiners, documents are regularly classified in E-subclasses according to the classification practices of any foreign Offices identified in parentheses at the end of the title. For example, "(EPO)" at the end of a title indicates both European and US patent documents, as classified by the EPO, are regularly added to the subclass. E-subclasses may contain subject matter outside the scope of this class.Consult their definitions, or the documents themselves to clarify or interpret titles.
[List of Pre Grant Publications for class 257 subclass E47.001][List of Patents for class 257 subclass E47.001]E47.001 BULK NEGATIVE RESISTANCE EFFECT DEVICES, E.G., GUNN-EFFECT DEVICES, PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO)
[List of Pre Grant Publications for class 257 subclass E47.002][List of Patents for class 257 subclass E47.002]E47.002 Subclass E47.002 indent level is 1 Gunn-effect devices or transferred electron devices (EPO)
 [List of Pre Grant Publications for class 257 subclass E47.003][List of Patents for class 257 subclass E47.003]E47.003 Subclass E47.003 indent level is 2 Controlled by electromagnetic radiation (EPO)
 [List of Pre Grant Publications for class 257 subclass E47.004][List of Patents for class 257 subclass E47.004]E47.004 Subclass E47.004 indent level is 2 Gunn diodes (EPO)
 [List of Pre Grant Publications for class 257 subclass E47.005][List of Patents for class 257 subclass E47.005]E47.005 Subclass E47.005 indent level is 1 Processes or apparatus peculiar to manufacture or treatment of these devices or of parts thereof (EPO)
[List of Pre Grant Publications for class 257 subclass E39.001][List of Patents for class 257 subclass E39.001]E39.001 DEVICES USING SUPERCONDUCTIVITY, PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO)
[List of Pre Grant Publications for class 257 subclass E39.002][List of Patents for class 257 subclass E39.002]E39.002 Subclass E39.002 indent level is 1 Containers or mountings (EPO)
 [List of Pre Grant Publications for class 257 subclass E39.003][List of Patents for class 257 subclass E39.003]E39.003 Subclass E39.003 indent level is 2 For Josephson devices (EPO)
 [List of Pre Grant Publications for class 257 subclass E39.004][List of Patents for class 257 subclass E39.004]E39.004 Subclass E39.004 indent level is 1 Characterized by current path (EPO)
 [List of Pre Grant Publications for class 257 subclass E39.005][List of Patents for class 257 subclass E39.005]E39.005 Subclass E39.005 indent level is 1 Characterized by shape of element (EPO)
[List of Pre Grant Publications for class 257 subclass E39.006][List of Patents for class 257 subclass E39.006]E39.006 Subclass E39.006 indent level is 1 Characterized by material (EPO)
[List of Pre Grant Publications for class 257 subclass E39.007][List of Patents for class 257 subclass E39.007]E39.007 Subclass E39.007 indent level is 2 Organic materials (EPO)
[List of Pre Grant Publications for class 257 subclass E39.009][List of Patents for class 257 subclass E39.009]E39.009 Subclass E39.009 indent level is 2 Ceramic materials (EPO)
[List of Pre Grant Publications for class 257 subclass E39.012][List of Patents for class 257 subclass E39.012]E39.012 Subclass E39.012 indent level is 1 Devices comprising junction of dissimilar materials, e.g., Josephson-effect devices (EPO)
 [List of Pre Grant Publications for class 257 subclass E39.013][List of Patents for class 257 subclass E39.013]E39.013 Subclass E39.013 indent level is 2 Single electron tunnelling devices (EPO)
[List of Pre Grant Publications for class 257 subclass E39.014][List of Patents for class 257 subclass E39.014]E39.014 Subclass E39.014 indent level is 2 Josephson-effect devices (EPO)
 [List of Pre Grant Publications for class 257 subclass E39.016][List of Patents for class 257 subclass E39.016]E39.016 Subclass E39.016 indent level is 2 Three or more electrode devices, e.g., transistor-like structures (EPO)
[List of Pre Grant Publications for class 257 subclass E39.017][List of Patents for class 257 subclass E39.017]E39.017 Subclass E39.017 indent level is 1 Permanent superconductor devices (EPO)
 [List of Pre Grant Publications for class 257 subclass E39.018][List of Patents for class 257 subclass E39.018]E39.018 Subclass E39.018 indent level is 2 Comprising high Tc ceramic materials (EPO)
[List of Pre Grant Publications for class 257 subclass E39.019][List of Patents for class 257 subclass E39.019]E39.019 Subclass E39.019 indent level is 2 Three or more electrode devices (EPO)
[List of Pre Grant Publications for class 257 subclass E51.001][List of Patents for class 257 subclass E51.001]E51.001 ORGANIC SOLID STATE DEVICES, PROCESSES OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES OR OF PARTS THEREOF
[List of Pre Grant Publications for class 257 subclass E51.002][List of Patents for class 257 subclass E51.002]E51.002 Subclass E51.002 indent level is 1 Structural detail of device (EPO)
[List of Pre Grant Publications for class 257 subclass E51.003][List of Patents for class 257 subclass E51.003]E51.003 Subclass E51.003 indent level is 2 Organic solid-state device adapted for rectifying, amplifying, oscillating, or switching, or capacitors or resistors with potential or surface barrier (EPO)
[List of Pre Grant Publications for class 257 subclass E51.012][List of Patents for class 257 subclass E51.012]E51.012 Subclass E51.012 indent level is 2 Radiation-sensitive organic solid-state device (EPO)
[List of Pre Grant Publications for class 257 subclass E51.018][List of Patents for class 257 subclass E51.018]E51.018 Subclass E51.018 indent level is 2 Light-emitting organic solid-state device with potential or surface barrier (EPO)
 [List of Pre Grant Publications for class 257 subclass E51.023][List of Patents for class 257 subclass E51.023]E51.023 Subclass E51.023 indent level is 2 Molecular electronic device (EPO)
[List of Pre Grant Publications for class 257 subclass E51.024][List of Patents for class 257 subclass E51.024]E51.024 Subclass E51.024 indent level is 1 Selection of material for organic solid-state device (EPO)
 [List of Pre Grant Publications for class 257 subclass E51.025][List of Patents for class 257 subclass E51.025]E51.025 Subclass E51.025 indent level is 2 For organic solid-state device adapted for rectifying, amplifying, oscillating, or switching, or capacitors or resistors with potential or surface barrier (EPO)
 [List of Pre Grant Publications for class 257 subclass E51.026][List of Patents for class 257 subclass E51.026]E51.026 Subclass E51.026 indent level is 2 For radiation-sensitive or light-emitting organic solid-state device with potential or surface barrier (EPO)
[List of Pre Grant Publications for class 257 subclass E51.027][List of Patents for class 257 subclass E51.027]E51.027 Subclass E51.027 indent level is 2 Organic polymer or oligomer (EPO)
[List of Pre Grant Publications for class 257 subclass E51.038][List of Patents for class 257 subclass E51.038]E51.038 Subclass E51.038 indent level is 2 Carbon-containing materials (EPO)
[List of Pre Grant Publications for class 257 subclass E51.041][List of Patents for class 257 subclass E51.041]E51.041 Subclass E51.041 indent level is 2 Coordination compound (e.g., porphyrin, phthalocyanine, metal(II) polypyridine complexes) (EPO)
 [List of Pre Grant Publications for class 257 subclass E51.045][List of Patents for class 257 subclass E51.045]E51.045 Subclass E51.045 indent level is 2 Biomolecule or macromolecule (e.g., proteins, ATP, chlorophyl, beta-carotene, lipids, enzymes) (EPO)
 [List of Pre Grant Publications for class 257 subclass E51.046][List of Patents for class 257 subclass E51.046]E51.046 Subclass E51.046 indent level is 2 Silicon-containing organic semiconductor (EPO)
[List of Pre Grant Publications for class 257 subclass E51.047][List of Patents for class 257 subclass E51.047]E51.047 Subclass E51.047 indent level is 2 Macromolecular system with low molecular weight (e.g., cyanine dyes, coumarine dyes, tetrathiafulvalene) (EPO)
 [List of Pre Grant Publications for class 257 subclass E51.052][List of Patents for class 257 subclass E51.052]E51.052 Subclass E51.052 indent level is 2 Langmuir Blodgett film (EPO)
[List of Pre Grant Publications for class 257 subclass E43.001][List of Patents for class 257 subclass E43.001]E43.001 SEMICONDUCTOR OR SOLID-STATE DEVICES USING GALVANO-MAGNETIC OR SIMILAR MAGNETIC EFFECTS, PROCESSES OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO)
[List of Pre Grant Publications for class 257 subclass E43.002][List of Patents for class 257 subclass E43.002]E43.002 Subclass E43.002 indent level is 1 Hall-effect devices (EPO)
 [List of Pre Grant Publications for class 257 subclass E43.003][List of Patents for class 257 subclass E43.003]E43.003 Subclass E43.003 indent level is 2 Semiconductor Hall-effect devices (EPO)
 [List of Pre Grant Publications for class 257 subclass E43.004][List of Patents for class 257 subclass E43.004]E43.004 Subclass E43.004 indent level is 1 Magnetic-field-controlled resistors (EPO)
 [List of Pre Grant Publications for class 257 subclass E43.005][List of Patents for class 257 subclass E43.005]E43.005 Subclass E43.005 indent level is 1 Selection of materials (EPO)
[List of Pre Grant Publications for class 257 subclass E43.006][List of Patents for class 257 subclass E43.006]E43.006 Subclass E43.006 indent level is 1 Processes or apparatus peculiar to manufacture or treatment of these devices or of parts thereof (EPO)
 [List of Pre Grant Publications for class 257 subclass E43.007][List of Patents for class 257 subclass E43.007]E43.007 Subclass E43.007 indent level is 2 For Hall-effect devices (EPO)
[List of Pre Grant Publications for class 257 subclass E33.001][List of Patents for class 257 subclass E33.001]E33.001 LIGHT EMITTING SEMICONDUCTOR DEVICES HAVING A POTENTIAL OR A SURFACE BARRIER, PROCESSES OR APPARATUS PECULIAR TO THE MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF
[List of Pre Grant Publications for class 257 subclass E33.002][List of Patents for class 257 subclass E33.002]E33.002 Subclass E33.002 indent level is 1 Device characterized by semiconductor body (EPO)
[List of Pre Grant Publications for class 257 subclass E33.003][List of Patents for class 257 subclass E33.003]E33.003 Subclass E33.003 indent level is 2 Particular crystalline orientation or structure (EPO)
[List of Pre Grant Publications for class 257 subclass E33.005][List of Patents for class 257 subclass E33.005]E33.005 Subclass E33.005 indent level is 2 Shape or structure (e.g., shape of epitaxial layer) (EPO)
[List of Pre Grant Publications for class 257 subclass E33.013][List of Patents for class 257 subclass E33.013]E33.013 Subclass E33.013 indent level is 2 Material of active region (EPO)
 [List of Pre Grant Publications for class 257 subclass E33.043][List of Patents for class 257 subclass E33.043]E33.043 Subclass E33.043 indent level is 2 Physical imperfections (e.g., particular concentration or distribution of impurity) (EPO)
[List of Pre Grant Publications for class 257 subclass E33.044][List of Patents for class 257 subclass E33.044]E33.044 Subclass E33.044 indent level is 1 Device characterized by their operation (EPO)
[List of Pre Grant Publications for class 257 subclass E33.045][List of Patents for class 257 subclass E33.045]E33.045 Subclass E33.045 indent level is 2 Having p-n or hi-lo junction (EPO)
[List of Pre Grant Publications for class 257 subclass E33.048][List of Patents for class 257 subclass E33.048]E33.048 Subclass E33.048 indent level is 2 Having heterojunction or graded gap (EPO)
 [List of Pre Grant Publications for class 257 subclass E33.051][List of Patents for class 257 subclass E33.051]E33.051 Subclass E33.051 indent level is 2 Having Schottky barrier (EPO)
 [List of Pre Grant Publications for class 257 subclass E33.052][List of Patents for class 257 subclass E33.052]E33.052 Subclass E33.052 indent level is 2 Having MIS barrier layer (EPO)
 [List of Pre Grant Publications for class 257 subclass E33.053][List of Patents for class 257 subclass E33.053]E33.053 Subclass E33.053 indent level is 2 Characterized by field-effect operation (EPO)
 [List of Pre Grant Publications for class 257 subclass E33.054][List of Patents for class 257 subclass E33.054]E33.054 Subclass E33.054 indent level is 2 Device being superluminescent diode (EPO)
[List of Pre Grant Publications for class 257 subclass E33.055][List of Patents for class 257 subclass E33.055]E33.055 Subclass E33.055 indent level is 1 Detail of nonsemiconductor component other than light-emitting semiconductor device (EPO)
[List of Pre Grant Publications for class 257 subclass E33.056][List of Patents for class 257 subclass E33.056]E33.056 Subclass E33.056 indent level is 2 Packaging (EPO)
[List of Pre Grant Publications for class 257 subclass E33.06][List of Patents for class 257 subclass E33.06]E33.06 Subclass E33.06 indent level is 2 Coatings (EPO)
[List of Pre Grant Publications for class 257 subclass E33.062][List of Patents for class 257 subclass E33.062]E33.062 Subclass E33.062 indent level is 2 Electrodes (EPO)
 [List of Pre Grant Publications for class 257 subclass E33.066][List of Patents for class 257 subclass E33.066]E33.066 Subclass E33.066 indent level is 2 Electrical contact or lead (e.g., lead frame) (EPO)
[List of Pre Grant Publications for class 257 subclass E33.067][List of Patents for class 257 subclass E33.067]E33.067 Subclass E33.067 indent level is 2 Means for light extraction or guiding (EPO)
 [List of Pre Grant Publications for class 257 subclass E33.075][List of Patents for class 257 subclass E33.075]E33.075 Subclass E33.075 indent level is 2 With means for cooling or heating (EPO)
 [List of Pre Grant Publications for class 257 subclass E33.076][List of Patents for class 257 subclass E33.076]E33.076 Subclass E33.076 indent level is 2 With means for light detecting (e.g., photodetector) (EPO)
 [List of Pre Grant Publications for class 257 subclass E33.077][List of Patents for class 257 subclass E33.077]E33.077 Subclass E33.077 indent level is 2 Monolithic integration with photosensitive device (EPO)
[List of Pre Grant Publications for class 257 subclass E31.001][List of Patents for class 257 subclass E31.001]E31.001 SEMICONDUCTOR DEVICES RESPONSIVE OR SENSITIVE TO ELECTROMAGNETIC RADIATION (E.G., INFRARED RADIATION, ADAPTED FOR CONVERSION OF RADIATION INTO ELECTRICAL ENERGY OR FOR CONTROL OF ELECTRICAL ENERGY BY SUCH RADIATION PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.002][List of Patents for class 257 subclass E31.002]E31.002 Subclass E31.002 indent level is 1 Characterized by semiconductor body (EPO)
[List of Pre Grant Publications for class 257 subclass E31.003][List of Patents for class 257 subclass E31.003]E31.003 Subclass E31.003 indent level is 2 Characterized by semiconductor body material (EPO)
[List of Pre Grant Publications for class 257 subclass E31.004][List of Patents for class 257 subclass E31.004]E31.004 Subclass E31.004 indent level is 3 Inorganic materials (EPO)
[List of Pre Grant Publications for class 257 subclass E31.005][List of Patents for class 257 subclass E31.005]E31.005 Subclass E31.005 indent level is 4 In different semiconductor regions (e.g., Cu 2 X/CdX heterojunction and X being Group VI element) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.008][List of Patents for class 257 subclass E31.008]E31.008 Subclass E31.008 indent level is 4 Selenium or tellurium (EPO)
[List of Pre Grant Publications for class 257 subclass E31.011][List of Patents for class 257 subclass E31.011]E31.011 Subclass E31.011 indent level is 4 Including, apart from doping material or other impurity, only Group IV element (EPO)
[List of Pre Grant Publications for class 257 subclass E31.015][List of Patents for class 257 subclass E31.015]E31.015 Subclass E31.015 indent level is 4 Including, apart from doping material or other impurity, only Group II-VI compound (e.g., CdS, ZnS, HgCdTe) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.019][List of Patents for class 257 subclass E31.019]E31.019 Subclass E31.019 indent level is 4 Including, apart from doping material or other impurity, only Group III-V compound (EPO)
[List of Pre Grant Publications for class 257 subclass E31.023][List of Patents for class 257 subclass E31.023]E31.023 Subclass E31.023 indent level is 4 Including, apart from doping material or other impurity, only Group IV compound (e.g., SiC) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.026][List of Patents for class 257 subclass E31.026]E31.026 Subclass E31.026 indent level is 4 Including, apart from doping material or other impurity, only compound other than Group II-VI, III-V, and IV compound (EPO)
[List of Pre Grant Publications for class 257 subclass E31.032][List of Patents for class 257 subclass E31.032]E31.032 Subclass E31.032 indent level is 2 Characterized by semiconductor body shape, relative size, or disposition of semiconductor regions (EPO)
[List of Pre Grant Publications for class 257 subclass E31.04][List of Patents for class 257 subclass E31.04]E31.04 Subclass E31.04 indent level is 2 Characterized by semiconductor body crystalline structure or plane (EPO)
[List of Pre Grant Publications for class 257 subclass E31.052][List of Patents for class 257 subclass E31.052]E31.052 Subclass E31.052 indent level is 1 Adapted to control current flow through device (e.g., photoresistor) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.053][List of Patents for class 257 subclass E31.053]E31.053 Subclass E31.053 indent level is 2 For device having potential or surface barrier (e.g., phototransistor) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.054][List of Patents for class 257 subclass E31.054]E31.054 Subclass E31.054 indent level is 3 Device sensitive to infrared, visible, or ultraviolet radiation (EPO)
[List of Pre Grant Publications for class 257 subclass E31.055][List of Patents for class 257 subclass E31.055]E31.055 Subclass E31.055 indent level is 4 Characterized by only one potential or surface barrier (EPO)
[List of Pre Grant Publications for class 257 subclass E31.068][List of Patents for class 257 subclass E31.068]E31.068 Subclass E31.068 indent level is 4 Characterized by two potential or surface barriers (EPO)
[List of Pre Grant Publications for class 257 subclass E31.07][List of Patents for class 257 subclass E31.07]E31.07 Subclass E31.07 indent level is 4 Characterized by at least three potential barriers (EPO)
[List of Pre Grant Publications for class 257 subclass E31.073][List of Patents for class 257 subclass E31.073]E31.073 Subclass E31.073 indent level is 4 Field-effect type (e.g., junction field-effect phototransistor) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.086][List of Patents for class 257 subclass E31.086]E31.086 Subclass E31.086 indent level is 3 Device sensitive to very short wavelength (e.g., X-ray, gamma-ray, or corpuscular radiation) (EPO)
 [List of Pre Grant Publications for class 257 subclass E31.092][List of Patents for class 257 subclass E31.092]E31.092 Subclass E31.092 indent level is 2 Device being sensitive to very short wavelength (e.g., X-ray, gamma-ray) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.093]