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| Class 257 | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
| Click here for a printable version of this file | |
| When placing a mandatory classification in Class 257, a cross-reference classification is normally made in at least one of the appended E-subclasses. | ||
![[List of Pre Grant Publications for class 257 subclass 1]](../as.gif) | ![[List of Patents for class 257 subclass 1]](../ps.gif) | 1 | BULK EFFECT DEVICE |
| | 2 |  Bulk effect switching in amorphous material |
| | 3 |  With means to localize region of conduction (e.g., "pore" structure) |
| | 4 | With specified electrode composition or configuration |
| | 5 | In array |
| | 6 | Intervalley transfer (e.g., Gunn effect) |
| | 9 | THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) |
| | 10 | Low workfunction layer for electron emission (e.g., photocathode electron emissive layer) |
| | 12 | Heterojunction |
| | 13 | Incoherent light emitter |
| | 14 | Quantum well |
| | 15 |  Superlattice |
| | 16 |  Of amorphous semiconductor material |
| | 17 | With particular barrier dimension |
| | 18 | Strained layer superlattice |
| | 20 | Field effect device |
| | 21 | Light responsive structure |
| | 22 | With specified semiconductor materials |
| | 23 | Current flow across well |
| | 24 | Field effect device |
| | 25 | Employing resonant tunneling |
| | 26 | Ballistic transport device |
| | 28 | Non-heterojunction superlattice (e.g., doping superlattice or alternating metal and insulator layers) |
| | 29 | Ballistic transport device (e.g., hot electron transistor) |
| | 30 | Tunneling through region of reduced conductivity |
| | 31 | Josephson |
| | 32 | Particular electrode material |
| | 34 | Weak link (e.g., narrowed portion of superconductive line) |
| | 35 | Particular barrier material |
| | 36 | With additional electrode to control conductive state of Josephson junction |
| | 37 | At least one electrode layer of semiconductor material |
| | 39 | Three or more electrode device |
| | 40 | ORGANIC SEMICONDUCTOR MATERIAL |
| | 41 | POINT CONTACT DEVICE |
| | 42 | SEMICONDUCTOR IS SELENIUM OR TELLURIUM IN ELEMENTAL FORM |
| | 43 | SEMICONDUCTOR IS AN OXIDE OF A METAL (E.G., CUO, ZNO) OR COPPER SULFIDE |
| | 44 | WITH METAL CONTACT ALLOYED TO ELEMENTAL SEMICONDUCTOR TYPE PN JUNCTION IN NONREGENERATIVE STRUCTURE |
| | 45 | Elongated alloyed region (e.g., thermal gradient zone melting, TGZM) |
| | 46 | In pn junction tunnel diode (Esaki diode) |
| | 47 | In bipolar transistor structure |
| | 48 | TEST OR CALIBRATION STRUCTURE |
| | 49 | NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) |
| | 50 | Non-single crystal, or recrystallized, active junction adapted to be electrically shorted (e.g., "anti-fuse" element) |
| | 51 | Non-single crystal, or recrystallized, material forms active junction with single crystal material (e.g., monocrystal to polycrystal pn junction or heterojunction) |
| | 52 | Amorphous semiconductor material |
| | 53 | Responsive to nonelectrical external signals (e.g., light) |
| | 54 | With Schottky barrier to amorphous material |
| | 55 | Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si x Ge 1-x , SiN y ) |
| | 56 | With impurity other than hydrogen to passivate dangling bonds (e.g., halide) |
| | 57 | Field effect device in amorphous semiconductor material |
| | 58 | With impurity other than hydrogen to passivate dangling bonds (e.g., halide) |
| | 59 | In array having structure for use as imager or display, or with transparent electrode |
| | 60 | With field electrode under or on a side edge of amorphous semiconductor material (e.g., vertical current path) |
| | 61 | With heavily doped regions contacting amorphous semiconductor material (e.g., heavily doped source and drain) |
| | 62 | With impurity other than hydrogen to passivate dangling bonds (e.g., halide) |
| | 63 | Amorphous semiconductor is alloy or contains material to change band gap (e.g., Si x Ge 1-x , SiN y ) |
| | 64 | Non-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation) |
| | 65 | Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., Ge x Si 1- x, polycrystalline silicon with dangling bond modifier) |
| | 66 | Field effect device in non-single crystal, or recrystallized, Semiconductor material |
| | 67 | In combination with device formed in single crystal semiconductor material (e.g., stacked FETs) |
| | 68 | Capacitor element in single crystal semiconductor (e.g., DRAM) |
| | 69 | Field effect transistor in single crystal material, complementary to that in non-single crystal, or recrystallized, material (e.g., CMOS) |
| | 70 | Recrystallized semiconductor material |
| | 71 | In combination with capacitor element (e.g., DRAM) |
| | 72 | In array having structure for use as imager or display, or with transparent electrode |
| | 73 | Schottky barrier to polycrystalline semiconductor material |
| | 74 | Plural recrystallized semiconductor layers (e.g., "3-dimensional integrated circuit") |
| | 75 | Recrystallized semiconductor material |
| | 76 | SPECIFIED WIDE BAND GAP (1.5EV) SEMICONDUCTOR MATERIAL OTHER THAN GAASP OR GAALAS |
| | 79 | INCOHERENT LIGHT EMITTER STRUCTURE |
| | 80 | In combination with or also constituting light responsive device |
| | 81 | With specific housing or contact structure |
| | 83 | Light coupled transistor structure |
| | 84 | Combined in integrated structure |
| | 86 | Active layer of indirect band gap semiconductor |
| | 87 | With means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in GaP) |
| | 88 | Plural light emitting devices (e.g., matrix, 7-segment array) |
| | 89 | Multi-color emission |
| | 91 | With shaped contacts or opaque masking |
| | 92 | Alphanumeric segmented array |
| | 93 | With electrical isolation means in integrated circuit structure |
| | 94 | With heterojunction |
| | 95 | With contoured external surface (e.g., dome shape to facilitate light emission) |
| | 96 | Plural heterojunctions in same device |
| | 99 | With housing or contact structure |
| | 100 | Encapsulated |
| | 101 | With particular dopant concentration or concentration profile (e.g., graded junction) |
| | 102 | With particular dopant material (e.g., zinc as dopant in GaAs) |
| | 103 | With particular semiconductor material |
| | 104 | TUNNELING PN JUNCTION (E.G., ESAKI DIODE) DEVICE |
| | 105 | In three or more terminal device |
| | 106 | Reverse bias tunneling structure (e.g., "backward" diode, true Zener diode) |
| | 107 | REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) |
| | 108 | Controlled by nonelectrical, nonoptical external signal (e.g., magnetic field, pressure, thermal) |
| | 109 | Having only two terminals and no control electrode (gate), e.g., Shockley diode |
| | 110 | More than four semiconductor layers of alternating conductivity types (e.g., pnpnpn structure, 5 layer bidirectional diacs, etc.) |
| | 111 | Triggered by V BO overvoltage means |
| | 112 | With highly-doped breakdown diode trigger |
| | 113 | With light activation |
| | 114 | With separate light detector integrated on chip with regenerative switching device |
| | 115 | With electrical trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.) |
| | 116 | With light conductor means (e.g., light fiber or light pipe) integral with device or device enclosure or package |
| | 118 | With groove or thinned light sensitive portion |
| | 119 | Bidirectional rectifier with control electrode (gate) (e.g., Triac) |
| | 120 | Six or more semiconductor layers of alternating conductivity types (e.g., npnpnpn structure) |
| | 121 | With diode or transistor in reverse path |
| | 122 | Lateral |
| | 123 | With trigger signal amplification (e.g., amplified gate) |
| | 124 | Combined with field effect transistor structure |
| | 126 | With means to separate a device into sections having different conductive polarity |
| | 128 | Having overlapping sections of different conductive polarity |
| | 129 | With means to increase reverse breakdown voltage |
| | 130 | Switching speed enhancement means |
| | 132 | Five or more layer unidirectional structure |
| | 133 | Combined with field effect transistor |
| | 134 | J-FET (junction field effect transistor) |
| | 137 | Having controllable emitter shunt |
| | 139 | With extended latchup current level (e.g., COMFET device) |
| | 140 | Combined with other solid-state active device in integrated structure |
| | 141 | Lateral structure, i.e., current flow parallel to main device surface |
| | 142 | Having impurity doping for gain reduction |
| | 143 | Having anode shunt means |
| | 144 | Cathode emitter or cathode electrode feature |
| | 145 | Low impedance channel contact extends below surface |
| | 146 | Combined with other solid-state active device in integrated structure |
| | 147 | With extended latchup current level (e.g., gate turn off "GTO" device) |
| | 148 | Having impurity doping for gain reduction |
| | 149 | Having anode shunt means |
| | 150 | With specified housing or external terminal |
| | 152 | Cathode emitter or cathode electrode feature |
| | 153 | Gate region or electrode feature |
| | 154 | With resistive region connecting separate sections of device |
| | 155 | With switching speed enhancement means (e.g., Schottky contact) |
| | 157 | With integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.) |
| | 158 | Three or more amplification stages |
| | 159 | Transistor as amplifier |
| | 160 | With distributed amplified current |
| | 161 | With a turn-off diode |
| | 162 | Lateral structure |
| | 163 | Emitter region feature |
| | 167 | Having at least four external electrodes |
| | 168 | With means to increase breakdown voltage |
| | 172 | With means to lower "ON" voltage drop |
| | 173 | Device protection (e.g., from overvoltage) |
| | 175 | With means to control triggering (e.g., gate electrode configuration, Zener diode firing, dV/Dt control, transient control by ferrite bead, etc.) |
| | 177 | With housing or external electrode |
| | 178 | With means to avoid stress between electrode and active device (e.g., thermal expansion matching of electrode to semiconductor) |
| | 180 | Stud mount |
| | 181 | With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, (e.g., ring) |
| | 183 | HETEROJUNCTION DEVICE |
| | 183.1 | Charge transfer device |
| | 184 | Light responsive structure |
| | 185 | Staircase (including graded composition) device |
| | 186 | Avalanche photodetection structure |
| | 187 | Having transistor structure |
| | 188 | Having narrow energy band gap (<<1eV) layer (e.g., PbSnTe, HgCdTe, etc.) |
| | 190 | With lattice constant mismatch (e.g., with buffer layer to accommodate mismatch) |
| | 191 | Having graded composition |
| | 192 | Field effect transistor |
| | 194 | Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (HEMT)) |
| | 196 | Both semiconductors of the heterojunction are the same conductivity type (i.e., either n or p) |
| | 197 | Bipolar transistor |
| | 199 | Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts, including heterojunction IMPATT type microwave diodes) |
| | 201 | Between different group IV-VI or II-VI or III-V compounds other than GaAs/GaAlAs |
| | 202 | GATE ARRAYS |
| | 203 | With particular chip input/output means |
| | 204 | Having specific type of active device (e.g., CMOS) |
| | 205 | With bipolar transistors or with FETs of only one channel conductivity type (e.g., enhancement-depletion FETs) |
| | 206 | Particular layout of complementary FETs with regard to each other |
| | 207 | With particular power supply distribution means |
| | 208 | With particular signal path connections |
| | 212 | CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE-BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR) |
| | 213 | FIELD EFFECT DEVICE |
| | 214 | Charge injection device |
| | 215 | Charge transfer device |
| | 216 | Majority signal carrier (e.g., buried or bulk channel, or peristaltic) |
| | 217 | Having a conductive means in direct contact with channel (e.g., non-insulated gate) |
| | 219 | Impurity concentration variation |
| | 220 | Vertically within channel (e.g., profiled) |
| | 221 | Along the length of the channel (e.g., doping variations for transfer directionality) |
| | 222 | Responsive to non-electrical external signal (e.g., imager) |
| | 224 | Channel confinement |
| | 225 | Non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.) |
| | 226 | Sensor element and charge transfer device are of different materials or on different substrates (e.g., "hybrid") |
| | 227 | With specified dopant (e.g., photoionizable, "extrinsic" detectors for infrared) |
| | 228 | Light responsive, back illuminated |
| | 229 | Having structure to improve output signal (e.g., exposure control structure) |
| | 231 | 2-dimensional area architecture |
| | 232 | Having alternating strips of sensor structures and register structures (e.g., interline imager) |
| | 233 | Sensors not overlaid by electrode (e.g., photodiodes) |
| | 234 | Single strip of sensors (e.g., linear imager) |
| | 235 | Electrical input |
| | 236 | Signal applied to field effect electrode |
| | 238 | Input signal responsive to signal charge in charge transfer device (e.g., regeneration or feedback) |
| | 239 | Signal charge detection type (e.g., floating diffusion or floating gate non-destructive output) |
| | 240 | Changing width or direction of channel (e.g., meandering channel) |
| | 241 | Multiple channels (e.g., converging or diverging or parallel channels) |
| | 242 | Vertical charge transfer |
| | 243 | Channel confinement |
| | 244 | Comprising a groove |
| | 245 | Structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel) |
| | 246 | Phase structure (e.g., doping variations to provide asymmetry for 2-phase operation; more than four phases or "electrode per bit") |
| | 249 | Electrode structures or materials |
| | 251 | Substantially incomplete signal charge transfer (e.g., bucket brigade) |
| | 252 | Responsive to non-optical, non-electrical signal |
| | 253 | Chemical (e.g., ISFET, CHEMFET) |
| | 254 | Physical deformation (e.g., strain sensor, acoustic wave detector) |
| | 255 | With current flow along specified crystal axis (e.g., axis of maximum carrier mobility) |
| | 256 | Junction field effect transistor (unipolar transistor) |
| | 257 | Light responsive or combined with light responsive device |
| | 259 | Elongated active region acts as transmission line or distributed active element (e.g., "transmission line" field effect transistor) |
| | 260 | Same channel controlled by both junction and insulated gate electrodes, or by both Schottky barrier and pn junction gates (e.g., "taper isolated" memory cell) |
| | 261 | Junction gate region free of direct electrical connection (e.g., floating junction gate memory cell structure) |
| | 262 | Combined with insulated gate field effect transistor (IGFET) |
| | 263 | Vertical controlled current path |
| | 264 | Enhancement mode or with high resistivity channel (e.g., doping of 10 15 cm -3 or less) |
| | 265 | In integrated circuit |
| | 266 | With multiple parallel current paths (e.g., grid gate) |
| | 268 | Enhancement mode |
| | 270 | Plural, separately connected, gates control same channel region |
| | 271 | Load element or constant current source (e.g., with source to gate connection) |
| | 272 | Junction field effect transistor in integrated circuit |
| | 273 | With bipolar device |
| | 274 | Complementary junction field effect transistors |
| | 275 | Microwave integrated circuit (e.g., microstrip type) |
| | 276 | With contact or heat sink extending through hole in semiconductor substrate, or with electrode suspended over substrate (e.g., air bridge) |
| | 277 | With capacitive or inductive elements |
| | 278 | With devices vertically spaced in different layers of semiconductor material (e.g., "3-dimensional" integrated circuit) |
| | 279 | Pn junction gate in compound semiconductor material (e.g., GaAs) |
| | 280 | With Schottky gate |
| | 281 | Schottky gate to silicon semiconductor |
| | 282 | Gate closely aligned to source region |
| | 284 | Schottky gate in groove |
| | 285 | With profiled channel dopant concentration or profiled gate region dopant concentration (e.g., maximum dopant concentration below surface) |
| | 286 | With non-uniform channel thickness or width |
| | 287 | With multiple channels or channel segments connected in parallel, or with channel much wider than length between source and drain (e.g., power JFET) |
| | 288 | Having insulated electrode (e.g., MOSFET, MOS diode) |
| | 289 | Significant semiconductor chemical compound in bulk crystal (e.g., GaAs) |
| | 290 | Light responsive or combined with light responsive device |
| | 295 | With ferroelectric material layer |
| | 296 | Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell) |
| | 297 | With means for preventing charge leakage due to minority carrier generation (e.g., alpha generated soft error protection or "dark current" leakage protection) |
| | 298 | Capacitor for signal storage in combination with non-volatile storage means |
| | 299 | Structure configured for voltage converter (e.g., charge pump, substrate bias generator) |
| | 300 | Capacitor coupled to, or forms gate of, insulated gate field effect transistor (e.g., non-destructive readout dynamic memory cell structure) |
| | 301 | Capacitor in trench |
| | 302 | Vertical transistor |
| | 303 | Stacked capacitor |
| | 304 | Storage node isolated by dielectric from semiconductor substrate |
| | 305 | With means to insulate adjacent storage nodes (e.g., channel stops or field oxide) |
| | 306 | Stacked capacitor |
| | 307 | Parallel interleaved capacitor electrode pairs (e.g., interdigitized) |
| | 308 |  With capacitor electrodes connection portion located centrally thereof (e.g., fin electrodes with central post) |
| | 309 | With increased effective electrode surface area (e.g., tortuous path, corrugated, or textured electrodes) |
| | 310 | With high dielectric constant insulator (e.g., Ta 2 O 5 ) |
| | 311 | Storage Node isolated by dielectric from semiconductor substrate |
| | 312 | Voltage variable capacitor (i. e., capacitance varies with applied voltage) |
| | 313 | Inversion layer capacitor |
| | 314 | Variable threshold (e.g., floating gate memory device) |
| | 315 | With floating gate electrode |
| | 316 | With additional contacted control electrode |
| | 317 | With irregularities on electrode to facilitate charging or discharging of floating electrode |
| | 318 | Additional control electrode is doped region in semiconductor substrate |
| | 319 | Plural additional contacted control electrodes |
| | 321 | With thin insulator region for charging or discharging floating electrode by quantum mechanical tunneling |
| | 322 | With charging or discharging by control voltage applied to source or drain region (e.g., by avalanche breakdown of drain junction) |
| | 323 | With means to facilitate light erasure |
| | 324 | Multiple insulator layers (e.g., MNOS structure) |
| | 327 | Short channel insulated gate field effect transistor |
| | 328 | Vertical channel or double diffused insulated gate field effect device provided with means to protect against excess voltage (e.g., gate protection diode) |
| | 329 | Gate controls vertical charge flow portion of channel (e.g., VMOS device) |
| | 335 | Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, DMOS transistor) |
| | 336 | With lightly doped portion of drain region adjacent channel (e.g., LDD structure) |
| | 337 | In integrated circuit structure |
| | 339 | With means to increase breakdown voltage |
| | 340 | With means (other than self-alignment of the gate electrode) to decrease gate capacitance (e.g., shield electrode) |
| | 341 | Plural sections connected in parallel (e.g., power MOSFET) |
| | 343 | All contacts on same surface (e.g., lateral structure) |
| | 344 | With lightly doped portion of drain region adjacent channel (e.g., LDD structure) |
| | 345 | With means to prevent sub-surface currents, or with non-uniform channel doping |
| | 346 | Gate electrode overlaps the source or drain by no more than depth of source or drain (e.g., self-aligned gate) |
| | 347 | Single crystal semiconductor layer on insulating substrate (SOI) |
| | 348 | Depletion mode field effect transistor |
| | 349 | With means (e.g., a buried channel stop layer) to prevent leakage current along the interface of the semiconductor layer and the insulating substrate |
| | 350 | Insulated electrode device is combined with diverse type device (e.g., complementary MOSFETs, FET with resistor, etc.) |
| | 351 | Complementary field effect transistor structures only (i.e., not including bipolar transistors, resistors, or other components) |
| | 352 | Substrate is single crystal insulator (e.g., sapphire or spinel) |
| | 355 | With overvoltage protective means |
| | 356 | For protecting against gate insulator breakdown |
| | 364 | With resistive gate electrode |
| | 365 | With plural, separately connected, gate electrodes in same device |
| | 367 | Insulated gate controlled breakdown of pn junction (e.g., field plate diode) |
| | 368 | Insulated gate field effect transistor in integrated circuit |
| | 369 | Complementary insulated gate field effect transistors |
| | 370 | Combined with bipolar transistor |
| | 371 | Complementary transistors in wells of opposite conductivity types more heavily doped than the substrate region in which they are formed, e.g., twin wells |
| | 372 | With means to prevent latchup or parasitic conduction channels |
| | 373 | With pn junction to collect injected minority carriers to prevent parasitic bipolar transistor action |
| | 374 | Dielectric isolation means (e.g., dielectric layer in vertical grooves) |
| | 375 | With means to reduce substrate spreading resistance (e.g., heavily doped substrate) |
| | 377 | With polysilicon interconnections to source or drain regions (e.g., polysilicon laminated with silicide) |
| | 378 | Combined with bipolar transistor |
| | 379 | Combined with passive components (e.g., resistors) |
| | 382 | With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) |
| | 383 | Contact of refractory or platinum group metal (e.g., molybdenum, tungsten, or titanium) |
| | 384 | Including silicide |
| | 385 | Multiple polysilicon layers |
| | 386 | With means to reduce parasitic capacitance |
| | 387 | Gate electrode overlaps at least one of source or drain by no more than depth of source or drain (e.g., self-aligned gate) |
| | 389 | With thick insulator over source or drain region |
| | 390 | Matrix or array of field effect transistors (e.g., array of FETs only some of which are completed, or structure for mask programmed read-only memory (ROM)) |
| | 391 | Selected groups of complete field effect devices having different threshold voltages (e.g., different channel dopant concentrations) |
| | 392 | Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode) |
| | 393 | Insulated gate field effect transistor adapted to function as load element for switching insulated gate field effect transistor |
| | 394 | With means to prevent parasitic conduction channels |
| | 395 | Thick insulator portion |
| | 400 | With heavily doped channel stop portion |
| | 401 | With specified physical layout (e.g., ring gate, source/drain regions shared between plural FETs, plural sections connected in parallel to form power MOSFET) |
| | 402 | With permanent threshold adjustment (e.g., depletion mode) |
| | 403 | With channel conductivity dopant same type as that of source and drain |
| | 405 | With gate insulator containing specified permanent charge |
| | 407 | With gate electrode of controlled workfunction material (e.g., low workfunction gate material) |
| | 408 | Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, LDD device) |
| | 409 | With means to increase breakdown voltage (e.g., field shield electrode, guard ring, etc.) |
| | 410 | Gate insulator includes material (including air or vacuum) other than SiO 2 |
| | 412 | Gate electrode of refractory material (e.g., polysilicon or a silicide of a refractory or platinum group metal) |
| | 414 | RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) |
| | 415 | Physical deformation |
| | 416 | Acoustic wave |
| | 417 | Strain sensors |
| | 420 | Means to reduce sensitivity to physical deformation |
| | 421 | Magnetic field |
| | 422 | With magnetic field directing means (e.g., shield, pole piece, etc.) |
| | 423 | Bipolar transistor magnetic field sensor (e.g., lateral bipolar transistor) |
| | 424 | Sensor with region of high carrier recombination (e.g., magnetodiode with carriers deflected to recombination region by magnetic field) |
| | 425 | Magnetic field detector using compound semiconductor material (e.g., GaAs, InSb, etc.) |
| | 426 | Differential output (e.g., with offset adjustment means or with means to reduce temperature sensitivity) |
| | 427 | Magnetic field sensor in integrated circuit (e.g., in bipolar transistor integrated circuit) |
| | 428 | Electromagnetic or particle radiation |
| | 429 | Charged or elementary particles |
| | 431 | Light |
| | 432 | With optical element |
| | 433 | With housing or encapsulation |
| | 435 | With optical shield or mask means |
| | 436 | With means for increasing light absorption (e.g., redirection of unabsorbed light) |
| | 438 | Avalanche junction |
| | 439 | Containing dopant adapted for photoionization |
| | 440 | With different sensor portions responsive to different wavelengths (e.g., color imager) |
| | 441 | Narrow band gap semiconductor (<<1eV) (e.g., PbSnTe) |
| | 443 | Matrix or array (e.g., single line arrays) |
| | 444 | Light sensor elements overlie active switching elements in integrated circuit (e.g., where the sensor elements are deposited on an integrated circuit) |
| | 445 | With antiblooming means |
| | 446 | With specific isolation means in integrated circuit |
| | 447 | With backside illumination (e.g., having a thinned central area or a non-absorbing substrate) |
| | 448 | With particular electrode configuration |
| | 449 | Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO 2 , indium tin oxide)) |
| | 450 | With doping profile to adjust barrier height |
| | 451 | Responsive to light having lower energy (i.e., longer wavelength) than forbidden band gap energy of semiconductor (e.g., by excitation of carriers from metal into semiconductor) |
| | 452 | With edge protection, e.g., doped guard ring or mesa structure |
| | 453 | With specified Schottky metallic layer |
| | 457 | With particular contact geometry (e.g., ring or grid) |
| | 458 | PIN detector, including combinations with non-light responsive active devices |
| | 459 | With particular contact geometry (e.g., ring or grid, or bonding pad arrangement) |
| | 460 | With backside illumination (e.g., with a thinned central area or non-absorbing substrate) |
| | 461 | Light responsive pn junction |
| | 462 | Phototransistor |
| | 463 | With particular doping concentration |
| | 464 | With particular layer thickness (e.g., layer less than light absorption depth) |
| | 465 | Geometric configuration of junction (e.g., fingers) |
| | 466 | External physical configuration of semiconductor (e.g., mesas, grooves) |
| | 467 | Temperature |
| | 471 | SCHOTTKY BARRIER |
| | 472 | To compound semiconductor |
| | 474 | As active junction in bipolar transistor (e.g., Schottky collector) |
| | 475 | With doping profile to adjust barrier height |
| | 476 | In integrated structure |
| | 480 | In voltage variable capacitance diode |
| | 481 | Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts) |
| | 483 | With means to prevent edge breakdown |
| | 485 | Specified materials |
| | 487 | WITH MEANS TO INCREASE BREAKDOWN VOLTAGE THRESHOLD |
| | 488 | Field relief electrode |
| | 491 | In integrated circuit |
| | 492 | With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., RESURF devices) |
| | 493 | With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., RESURF devices) |
| | 494 | Reverse-biased pn junction guard region |
| | 495 | Floating pn junction guard region |
| | 496 | With physical configuration of semiconductor surface to reduce electric field (e.g., reverse bevels, double bevels, stepped mesas, etc.) |
| | 497 | PUNCHTHROUGH STRUCTURE DEVICE (E.G., PUNCHTHROUGH TRANSISTOR, CAMEL BARRIER DIODE) |
| | 498 | Punchthrough region fully depleted at zero external applied bias voltage (e.g., camel barrier or planar doped barrier devices, or so-called "Bipolar SIT" devices) |
| | 499 | INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS |
| | 500 | Including high voltage or high power devices isolated from low voltage or low power devices in the same integrated circuit |
| | 501 | Including dielectric isolation means |
| | 502 | High power or high voltage device extends completely through semiconductor substrate (e.g., backside collector contact) |
| | 503 | With contact or metallization configuration to reduce parasitic coupling (e.g., separate ground pads for different parts of integrated circuit) |
| | 504 | Including means for establishing a depletion region throughout a semiconductor layer for isolating devices in different portions of the layer (e.g., "JFET" isolation) |
| | 505 | With polycrystalline semiconductor isolation region in direct contact with single crystal active semiconductor material |
| | 506 | Including dielectric isolation means |
| | 507 | With single crystal insulating substrate (e.g., sapphire) |
| | 508 | With metallic conductor within isolating dielectric or between semiconductor and isolating dielectric (e.g., metal shield layer or internal connection layer) |
| | 509 | Combined with pn junction isolation (e.g., isoplanar, LOCOS) |
| | 510 | Dielectric in groove |
| | 511 | With complementary (npn and pnp) bipolar transistor structures |
| | 513 | Vertical walled groove |
| | 515 | With active junction abutting groove (e.g., "walled emitter") |
| | 516 | With passive component (e.g., resistor, capacitor, etc.) |
| | 517 | With bipolar transistor structure |
| | 519 | Including heavily doped channel stop region adjacent groove |
| | 520 | Conductive filling in dielectric-lined groove (e.g., polysilicon backfill) |
| | 521 | Sides of grooves along major crystal planes (e.g., (111), (100) planes, etc.) |
| | 522 | Air isolation (e.g., beam lead supported semiconductor islands) |
| | 523 | Isolation by region of intrinsic (undoped) semiconductor material (e.g., including region physically damaged by proton bombardment) |
| | 524 | Full dielectric isolation with polycrystalline semiconductor substrate |
| | 526 | With bipolar transistor structure |
| | 528 | Passive components in ICs |
| | 529 | Including programmable passive component (e.g., fuse) |
| | 531 | Including inductive element |
| | 532 | Including capacitor component |
| | 533 | Combined with resistor to form RC filter structure |
| | 534 | With means to increase surface area (e.g., grooves, ridges, etc.) |
| | 535 | Both terminals of capacitor isolated from substrate |
| | 536 | Including resistive element |
| | 544 | With pn junction isolation |
| | 545 | With means to control isolation junction capacitance (e.g., lightly doped layer at isolation junction to increase depletion layer width) |
| | 546 | With structural means to protect against excess or reversed polarity voltage |
| | 547 | With structural means to control parasitic transistor action or leakage current |
| | 548 | At least three regions of alternating conductivity types with dopant concentration gradients decreasing from surface of semiconductor (e.g., "triple-diffused" integrated circuit) |
| | 551 | Including voltage reference element (e.g., avalanche diode, so-called "Zener diode" with breakdown voltage greater than 6 volts or with positive temperature coefficient of breakdown voltage) |
| | 552 | With bipolar transistor structure |
| | 553 | Transistors of same conductivity type (e.g., npn) having different current gain or different operating voltage characteristics |
| | 554 | With connecting region made of polycrystalline semiconductor material (e.g., polysilicon base contact) |
| | 555 | Complementary bipolar transistor structures (e.g., integrated injection logic, I 2 L) |
| | 557 | Lateral bipolar transistor structure |
| | 558 | With base region doping concentration step or gradient or with means to increase current gain |
| | 559 | With active region formed along groove or exposed edge in semiconductor |
| | 560 | With multiple collectors or emitters |
| | 563 | With multiple separately connected emitter, collector, or base regions in same transistor structure |
| | 565 | BIPOLAR TRANSISTOR STRUCTURE |
| | 566 | Plural non-isolated transistor structures in same structure |
| | 567 | Darlington configuration (i.e., emitter to collector current of input transistor supplied to base region of output transistor) |
| | 568 | More than two Darlington-connected transistors |
| | 569 | Complementary Darlington-connected transistors |
| | 570 | With active components in addition to Darlington transistors (e.g., antisaturation diode, bleeder diode connected antiparallel to input transistor base-emitter junction, etc.) |
| | 571 | Non-planar structure (e.g., mesa emitter, or having a groove to define resistor) |
| | 572 | With resistance means connected between transistor base regions |
| | 573 | With housing or contact structure or configuration |
| | 574 | Complementary transistors share common active region (e.g., integrated injection logic, I 2 L) |
| | 577 | Including additional component in same, non-isolated structure (e.g., transistor with diode, transistor with resistor, etc.) |
| | 578 | With enlarged emitter area (e.g., power device) |
| | 579 | With separate emitter areas connected in parallel |
| | 580 | With current ballasting means (e.g., emitter ballasting resistors or base current ballasting means) |
| | 582 | With current ballasting means (e.g., emitter ballasting resistors or base current ballasting resistors) |
| | 583 | With means to reduce transistor action in selected portions of transistor (e.g., heavy base region doping under central web of emitter to prevent secondary breakdown) |
| | 584 | With housing or contact (i.e., electrode) means |
| | 585 | With means to increase inverse gain |
| | 586 | With non-planar semiconductor surface (e.g., groove, mesa, bevel, etc.) |
| | 587 | With specified electrode means |
| | 589 | Avalanche transistor |
| | 590 | With means to reduce minority carrier lifetime (e.g., region of deep level dopant or region of crystal damage) |
| | 591 | With emitter region having specified doping concentration profile (e.g., high-low concentration step) |
| | 593 | With means to increase current gain or operating frequency |
| | 594 | WITH GROOVE TO DEFINE PLURAL DIODES |
| | 595 | VOLTAGE VARIABLE CAPACITANCE DEVICE |
| | 596 | With specified dopant profile |
| | 597 | Retrograde dopant profile (e.g., dopant concentration decreases with distance from rectifying junction) |
| | 598 | With plural junctions whose depletion regions merge to vary voltage dependence |
| | 599 | With means to increase active junction area (e.g., grooved or convoluted surface) |
| | 600 | With physical configuration to vary voltage dependence (e.g., mesa) |
| | 601 | Plural diodes in same non-isolated structure, or device having three or more terminals |
| | 602 | With specified housing or contact |
| | 603 | AVALANCHE DIODE (E.G., SO-CALLED "ZENER" DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS) |
| | 604 | Microwave transit time device (e.g., IMPATT diode) |
| | 605 | With means to limit area of breakdown (e.g., guard ring having higher breakdown voltage) |
| | 607 | WITH SPECIFIED DOPANT (E.G., PLURAL DOPANTS OF SAME CONDUCTIVITY IN SAME REGION) |
| | 608 | Switching device based on filling and emptying of deep energy levels |
| | 609 | For compound semiconductor (e.g., deep level dopant) |
| | 610 | Deep level dopant |
| | 613 | INCLUDING SEMICONDUCTOR MATERIAL OTHER THAN SILICON OR GALLIUM ARSENIDE (GAAS) (E.G., PB X SN 1-X TE) |
| | 614 | Group II-VI compound (e.g., CdTe, Hg x Cd 1-x Te) |
| | 615 | Group III-V compound (e.g., InP) |
| | 616 | Containing germanium, Ge |
| | 617 | INCLUDING REGION CONTAINING CRYSTAL DAMAGE |
| | 618 | PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.) |
| | 619 | With thin active central semiconductor portion surrounded by thicker inactive shoulder (e.g., for mechanical support) |
| | 621 | With electrical contact in hole in semiconductor (e.g., lead extends through semiconductor body) |
| | 622 | Groove |
| | 623 | Mesa structure (e.g., including undercut or stepped mesa configuration or having constant slope taper) |
| | 624 | With low resistance ohmic connection means along exposed mesa edge (e.g., contact or heavily doped region along exposed mesa to reduce "skin effect" losses in microwave diode) |
| | 626 | Combined with passivating coating |
| | 627 | With specified crystal plane or axis |
| | 629 | WITH MEANS TO CONTROL SURFACE EFFECTS |
| | 630 | With inversion-preventing shield electrode |
| | 631 | In compound semiconductor material (e.g., GaAs) |
| | 632 | Insulating coating |
| | 633 | With thermal expansion compensation (e.g., thermal expansion of glass passivant matched to that of semiconductor) |
| | 634 | Insulating coating of glass composition containing component to adjust melting or softening temperature (e.g., low melting point glass) |
| | 635 | Multiple layers |
| | 636 | At least one layer of semi-insulating material |
| | 637 | Three or more insulating layers |
| | 638 | With discontinuous or varying thickness layer (e.g., layer covers only selected portions of semiconductor) |
| | 639 | At least one layer of silicon oxynitride |
| | 640 | At least one layer of silicon nitride |
| | 642 | At least one layer of organic material |
| | 644 | At least one layer of glass |
| | 645 | Insulating layer containing specified electrical charge (e.g., net negative electrical charge) |
| | 646 | Coating of semi-insulating material (e.g., amorphous silicon or silicon-rich silicon oxide) |
| | 647 | Insulating layer recessed into semiconductor surface (e.g., LOCOS oxide) |
| | 649 | Insulating layer of silicon nitride or silicon oxynitride |
| | 650 | Insulating layer of glass |
| | 651 | Details of insulating layer electrical charge (e.g., negative insulator layer charge) |
| | 652 | Channel stop layer |
| | 653 | WITH SPECIFIED SHAPE OF PN JUNCTION |
| | 655 | WITH SPECIFIED IMPURITY CONCENTRATION GRADIENT |
| | 656 | With high resistivity (e.g., "intrinsic") layer between P and N layers (e.g., PIN diode) |
| | 657 | Stepped profile |
| | 658 | PLATE TYPE RECTIFIER ARRAY |
| | 659 | WITH SHIELDING (E.G., ELECTRICAL OR MAGNETIC SHIELDING, OR FROM ELECTROMAGNETIC RADIATION OR CHARGED PARTICLES) |
| | 660 | With means to shield device contained in housing or package from charged particles (e.g., alpha particles) or highly ionizing radiation (i.e., hard X-rays or shorter wavelength) |
| | 661 | SUPERCONDUCTIVE CONTACT OR LEAD |
| | 664 | TRANSMISSION LINE LEAD (E.G., STRIPLINE, COAX, ETC.) |
| | 665 | CONTACTS OR LEADS INCLUDING FUSIBLE LINK MEANS OR NOISE SUPPRESSION MEANS |
| | 666 | LEAD FRAME |
| | 667 | With dam or vent for encapsulant |
| | 668 | On insulating carrier other than a printed circuit board |
| | 669 | With stress relief |
| | 670 | With separate tie bar element or plural tie bars |
| | 672 | Small lead frame (e.g., "spider" frame) for connecting a large lead frame to a semiconductor chip |
| | 673 | With bumps on ends of lead fingers to connect to semiconductor |
| | 674 | With means for controlling lead tension |
| | 675 | With heat sink means |
| | 676 | With structure for mounting semiconductor chip to lead frame (e.g., configuration of die bonding flag, absence of a die bonding flag, recess for LED) |
| | 677 | Of specified material other than copper (e.g., Kovar (T.M.)) |
| | 678 | HOUSING OR PACKAGE |
| | 679 | Smart (e.g., credit) card package |
| | 680 | With window means |
| | 682 | With desiccant, getter, or gas filling |
| | 683 | With means to prevent explosion of package |
| | 684 | With semiconductor element forming part (e.g., base, of housing) |
| | 685 | Multiple housings |
| | 687 | Housing or package filled with solid or liquid electrically insulating material |
| | 688 | With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, e.g., ring |
| | 690 | With contact or lead |
| | 691 | Having power distribution means (e.g., bus structure) |
| | 692 | With particular lead geometry |
| | 698 | With specific electrical feedthrough structure |
| | 700 | Multiple contact layers separated from each other by insulator means and forming part of a package or housing (e.g., plural ceramic layer package) |
| | 701 | Insulating material |
| | 702 | Of insulating material other than ceramic |
| | 703 | Composite ceramic, or single ceramic with metal |
| | 704 | Cap or lid |
| | 705 | Of high thermal conductivity ceramic (e.g., BeO) |
| | 706 | With heat sink |
| | 708 | Entirely of metal except for feedthrough |
| | 709 | With specified insulator to isolate device from housing |
| | 710 | With specified means (e.g., lip) to seal base to cap |
| | 711 | With raised portion of base for mounting semiconductor chip |
| | 712 | With provision for cooling the housing or its contents |
| | 713 | For integrated circuit |
| | 714 | Liquid coolant |
| | 717 | Isolation of cooling means (e.g., heat sink) by an electrically insulating element (e.g., spacer) |
| | 718 | Heat dissipating element held in place by clamping or spring means |
| | 720 | Heat dissipating element has high thermal conductivity insert (e.g., copper slug in aluminum heat sink) |
| | 721 | With gas coolant |
| | 723 | For plural devices |
| | 727 | Device held in place by clamping |
| | 728 | For high frequency (e.g., microwave) device |
| | 729 | Portion of housing of specific materials |
| | 730 | Outside periphery of package having specified shape or configuration |
| | 731 | With housing mount |
| | 734 | COMBINED WITH ELECTRICAL CONTACT OR LEAD |
| | 735 | Beam leads (i.e., leads that extend beyond the ends or sides of a chip component) |
| | 737 | Bump leads |
| | 739 | With textured surface |
| | 740 | With means to prevent contact from penetrating shallow PN junction (e.g., prevention of aluminum "spiking") |
| | 741 | Of specified material other than unalloyed aluminum |
| | 742 | With a semiconductor conductivity substitution type dopant (e.g., germanium in the case of a gallium arsenide semiconductor) in a contact metal) |
| | 744 | For compound semiconductor material |
| | 746 | Composite material (e.g., fibers or strands embedded in solid matrix) |
| | 747 | With thermal expansion matching of contact or lead material to semiconductor active device |
| | 749 | At least portion of which is transparent to ultraviolet, visible or infrared light |
| | 750 | Layered |
| | 751 | At least one layer forms a diffusion barrier |
| | 752 | Planarized to top of insulating layer |
| | 753 | With adhesion promoting means (e.g., layer of material) to promote adhesion of contact to an insulating layer |
| | 754 | At least one layer of silicide or polycrystalline silicon |
| | 755 | Polysilicon laminated with silicide |
| | 756 | Multiple polysilicon layers |
| | 757 | Silicide of refractory or platinum group metal |
| | 758 | Multiple metal levels on semiconductor, separated by insulating layer (e.g., multiple level metallization for integrated circuit) |
| | 759 | Including organic insulating material between metal levels |
| | 760 | Separating insulating layer is laminate or composite of plural insulating materials (e.g., silicon oxide on silicon nitride, silicon oxynitride) |
| | 761 | At least one layer containing vanadium, hafnium, niobium, zirconium, or tantalum |
| | 762 | At least one layer containing silver or copper |
| | 763 | At least one layer of molybdenum, titanium, or tungsten |
| | 765 | At least one layer of an alloy containing aluminum |
| | 766 | At least one layer containing chromium or nickel |
| | 767 | Resistive to electromigration or diffusion of the contact or lead material |
| | 768 | Refractory or platinum group metal or alloy or silicide thereof |
| | 769 | Platinum group metal or silicide thereof |
| | 770 | Molybdenum, tungsten, or titanium or their silicides |
| | 771 | Alloy containing aluminum |
| | 772 | Solder composition |
| | 773 | Of specified configuration |
| | 774 | Via (interconnection hole) shape |
| | 775 | Varying width or thickness of conductor |
| | 776 | Cross-over arrangement, component or structure |
| | 777 | Chip mounted on chip |
| | 778 | Flip chip |
| | 779 | Solder wettable contact, lead, or bond |
| | 780 | Ball or nail head type contact, lead, or bond |
| | 782 | Die bond |
| | 784 | Wire contact, lead, or bond |
| | 785 | By pressure alone |
| | 786 | Configuration or pattern of bonds |
| | 787 | ENCAPSULATED |
| | 788 | With specified encapsulant |
| | 789 | With specified filler material |
| | 790 | Plural encapsulating layers |
| | 791 | Including polysiloxane (e.g., silicone resin) |
| | 792 | Including polyimide |
| | 793 | Including epoxide |
| | 794 | Including glass |
| | 795 | With specified filler material |
| | 796 | With heat sink embedded in encapsulant |
| | 797 | ALIGNMENT MARKS |
| | 798 | MISCELLANEOUS |
| E-SUBCLASSES | ||
| The following subclasses beginning with the letter E are E-subclasses. Each E-subclass corresponds in scope to a classification in a foreign classification system, for example, the European Classification system (ECLA). The foreign classification equivalent to an E-subclass is identified in the subclass definition. In addition to US documents classified in E-subclasses by US examiners, documents are regularly classified in E-subclasses according to the classification practices of any foreign Offices identified in parentheses at the end of the title. For example, "(EPO)" at the end of a title indicates both European and US patent documents, as classified by the EPO, are regularly added to the subclass. E-subclasses may contain subject matter outside the scope of this class.Consult their definitions, or the documents themselves to clarify or interpret titles. |
| | E47.001 | BULK NEGATIVE RESISTANCE EFFECT DEVICES, E.G., GUNN-EFFECT DEVICES, PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO) |
| | E47.002 | Gunn-effect devices or transferred electron devices (EPO) |
| | E47.005 | Processes or apparatus peculiar to manufacture or treatment of these devices or of parts thereof (EPO) |
| | E39.001 | DEVICES USING SUPERCONDUCTIVITY, PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO) |
| | E39.002 | Containers or mountings (EPO) |
| | E39.004 | Characterized by current path (EPO) |
| | E39.005 | Characterized by shape of element (EPO) |
| | E39.006 | Characterized by material (EPO) |
| | E39.007 | Organic materials (EPO) |
| | E39.008 | Fullerene superconductors, e.g., soccerball-shaped allotrope of carbon, e.g., C60, C94 (EPO) |
| | E39.009 | Ceramic materials (EPO) |
| | E39.012 | Devices comprising junction of dissimilar materials, e.g., Josephson-effect devices (EPO) |
| | E39.013 | Single electron tunnelling devices (EPO) |
| | E39.014 | Josephson-effect devices (EPO) |
| | E39.016 | Three or more electrode devices, e.g., transistor-like structures (EPO) |
| | E39.017 | Permanent superconductor devices (EPO) |
| | E51.001 | ORGANIC SOLID STATE DEVICES, PROCESSES OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES OR OF PARTS THEREOF |
| | E51.002 | Structural detail of device (EPO) |
| | E51.003 | Organic solid-state device adapted for rectifying, amplifying, oscillating, or switching, or capacitors or resistors with potential or surface barrier (EPO) |
| | E51.004 | Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (EPO) |
| | E51.012 | Radiation-sensitive organic solid-state device (EPO) |
| | E51.013 | Metal-organic semiconductor-metal device (EPO) |
| | E51.014 | Comprising bulk heterojunction (EPO) |
| | E51.015 | Comprising organic/inorganic heterojunction (EPO) |
| | E51.016 | Majority carrier device using sensitization of wide band gap semiconductor (e.g., TiO 2 ) (EPO) |
| | E51.017 | Comprising organic semiconductor-organic semiconductor heterojunction (EPO) |
| | E51.018 | Light-emitting organic solid-state device with potential or surface barrier (EPO) |
| | E51.019 | Electrode (EPO) |
| | E51.02 | Encapsulation (EPO) |
| | E51.021 | Arrangements for extracting light from device (e.g., Bragg reflector pair) (EPO) |
| | E51.022 | Multicolor organic light-emitting device (OLED) (EPO) |
| | E51.023 | Molecular electronic device (EPO) |
| | E51.024 | Selection of material for organic solid-state device (EPO) |
| | E51.025 | For organic solid-state device adapted for rectifying, amplifying, oscillating, or switching, or capacitors or resistors with potential or surface barrier (EPO) |
| | E51.026 | For radiation-sensitive or light-emitting organic solid-state device with potential or surface barrier (EPO) |
| | E51.027 | Organic polymer or oligomer (EPO) |
| | E51.028 | Comprising aromatic, heteroaromatic, or arrylic chains (e.g., polyaniline, polyphenylene, polyphenylene vinylene) (EPO) |
| | E51.029 | Heteroaromatic compound comprising sulfur or selene (e.g., polythiophene) (EPO) |
| | E51.031 | Polyphenylenevinylene and derivatives (EPO) |
| | E51.032 | Polyflurorene and derivative (EPO) |
| | E51.033 | Comprising aliphatic or olefinic chains (e.g., polyN-vinylcarbazol, PVC, PTFE) (EPO) |
| | E51.036 | Copolymers (EPO) |
| | E51.037 | Ladder-type polymer (EPO) |
| | E51.038 | Carbon-containing materials (EPO) |
| | E51.041 | Coordination compound (e.g., porphyrin, phthalocyanine, metal(II) polypyridine complexes) (EPO) |
| | E51.042 | Phthalocyanine (EPO) |
| | E51.043 | Metal complexes comprising Group IIIB metal (Al, Ga, In, or Ti) (e.g., Tris (8-hydroxyquinoline) aluminium (Alq3)) (EPO) |
| | E51.044 | Transition metal complexes (e.g., Ru(II) polypyridine complexes) (EPO) |
| | E51.045 | Biomolecule or macromolecule (e.g., proteins, ATP, chlorophyl, beta-carotene, lipids, enzymes) (EPO) |
| | E51.046 | Silicon-containing organic semiconductor (EPO) |
| | E51.047 | Macromolecular system with low molecular weight (e.g., cyanine dyes, coumarine dyes, tetrathiafulvalene) (EPO) |
| | E51.048 | Charge transfer complexes (EPO) |
| | E51.049 | Polycondensed aromatic or heteroaromatic compound (e.g., pyrene, perylene, pentacene) (EPO) |
| | E51.05 | Aromatic compound containing heteroatom (e.g., perylenetetracarboxylic dianhydride, perylene tetracarboxylic diimide) (EPO) |
| | E51.051 | Amine compound having at least two aryl on amine-nitrogen atom (e.g., triphenylamine) (EPO) |
| | E51.052 | Langmuir Blodgett film (EPO) |
| | E43.001 | SEMICONDUCTOR OR SOLID-STATE DEVICES USING GALVANO-MAGNETIC OR SIMILAR MAGNETIC EFFECTS, PROCESSES OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO) |
| | E43.002 | Hall-effect devices (EPO) |
| | E43.004 | Magnetic-field-controlled resistors (EPO) |
| | E43.005 | Selection of materials (EPO) |
| | E43.006 | Processes or apparatus peculiar to manufacture or treatment of these devices or of parts thereof (EPO) |
| | E33.001 | LIGHT EMITTING SEMICONDUCTOR DEVICES HAVING A POTENTIAL OR A SURFACE BARRIER, PROCESSES OR APPARATUS PECULIAR TO THE MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF |
| | E33.002 | Device characterized by semiconductor body (EPO) |
| | E33.003 | Particular crystalline orientation or structure (EPO) |
| | E33.005 | Shape or structure (e.g., shape of epitaxial layer) (EPO) |
| | E33.006 | Shape of semiconductor body (EPO) |
| | E33.007 | Shape of potential barrier (EPO) |
| | E33.008 | Multiple quantum well structure (EPO) |
| | E33.009 | Including, apart from doping materials or other only impurities, Group IV element (e.g., Si-SiGe superlattice) (EPO) |
| | E33.01 | Doped superlattice (e.g., nipi superlattice) (EPO) |
| | E33.011 | For current confinement (EPO) |
| | E33.012 | Multiple active regions between two electrodes (e.g., stacks) (EPO) |
| | E33.013 | Material of active region (EPO) |
| | E33.014 | In different regions (EPO) |
| | E33.015 | Comprising only Group IV element (EPO) |
| | E33.016 | With heterojunction (EPO) |
| | E33.017 | Characterized by doping material (EPO) |
| | E33.018 | Including porous Si (EPO) |
| | E33.019 | Comprising only Group II-VI compound (EPO) |
| | E33.02 | Ternary or quaternary compound (e.g., CdHgTe) (EPO) |
| | E33.022 | Characterized by doping material (EPO) |
| | E33.023 | Comprising only Group III-V compound (EPO) |
| | E33.024 | Binary compound (e.g., GaAs) (EPO) |
| | E33.026 | Ternary or quaternary compound (e.g., AlGaAs) (EPO) |
| | E33.029 | Characterized by doping material (EPO) |
| | E33.031 | Including ternary or quaternary compound (e.g., AlGaAs) (EPO) |
| | E33.035 | Comprising only Group IV compound (e.g., SiC) (EPO) |
| | E33.037 | Comprising compound other than Group II-VI, III-V, and IV compound (EPO) |
| | E33.043 | Physical imperfections (e.g., particular concentration or distribution of impurity) (EPO) |
| | E33.044 | Device characterized by their operation (EPO) |
| | E33.045 | Having p-n or hi-lo junction (EPO) |
| | E33.048 | Having heterojunction or graded gap (EPO) |
| | E33.049 | Comprising only Group III-V compound (EPO) |
| | E33.05 | Comprising only Group II-IV compound (EPO) |
| | E33.051 | Having Schottky barrier (EPO) |
| | E33.052 | Having MIS barrier layer (EPO) |
| | E33.053 | Characterized by field-effect operation (EPO) |
| | E33.054 | Device being superluminescent diode (EPO) |
| | E33.055 | Detail of nonsemiconductor component other than light-emitting semiconductor device (EPO) |
| | E33.056 | Packaging (EPO) |
| | E33.06 | Coatings (EPO) |
| | E33.062 | Electrodes (EPO) |
| | E33.063 | Characterized by material (EPO) |
| | E33.064 | Comprising transparent conductive layers (e.g., transparent conductive oxides (TCO), indium tin oxide (ITO)) (EPO) |
| | E33.065 | Characterized by shape (EPO) |
| | E33.066 | Electrical contact or lead (e.g., lead frame) (EPO) |
| | E33.067 | Means for light extraction or guiding (EPO) |
| | E33.068 | Integrated with device (e.g., back surface reflector, lens) (EPO) |
| | E33.069 | Comprising resonant cavity structure (e.g., Bragg reflector pair) (EPO) |
| | E33.07 | Comprising window layer (EPO) |
| | E33.071 | Not integrated with device (EPO) |
| | E33.074 | Scattering means (e.g., surface roughening) (EPO) |
| | E33.075 | With means for cooling or heating (EPO) |
| | E33.076 | With means for light detecting (e.g., photodetector) (EPO) |
| | E33.077 | Monolithic integration with photosensitive device (EPO) |
| | E31.001 | SEMICONDUCTOR DEVICES RESPONSIVE OR SENSITIVE TO ELECTROMAGNETIC RADIATION (E.G., INFRARED RADIATION, ADAPTED FOR CONVERSION OF RADIATION INTO ELECTRICAL ENERGY OR FOR CONTROL OF ELECTRICAL ENERGY BY SUCH RADIATION PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF) (EPO) |
| | E31.002 | Characterized by semiconductor body (EPO) |
| | E31.003 | Characterized by semiconductor body material (EPO) |
| | E31.004 | Inorganic materials (EPO) |
| | E31.005 | In different semiconductor regions (e.g., Cu 2 X/CdX heterojunction and X being Group VI element) (EPO) |
| | E31.006 | Comprising only Cu 2 X/CdX heterojunction and X being Group VI element (EPO) |
| | E31.007 | Comprising only heterojunction including Group I-III-VI compound (e.g., CdS/CuInSe 2 heterojunction) (EPO) |
| | E31.008 | Selenium or tellurium (EPO) |
| | E31.009 | For device having potential or surface barrier (EPO) |
| | E31.01 | Characterized by doping material (EPO) |
| | E31.011 | Including, apart from doping material or other impurity, only Group IV element (EPO) |
| | E31.012 | For device having potential or surface barrier (EPO) |
| | E31.013 | Comprising porous silicon as part of active layer (EPO) |
| | E31.014 | Characterized by doping material (EPO) |
| | E31.015 | Including, apart from doping material or other impurity, only Group II-VI compound (e.g., CdS, ZnS, HgCdTe) (EPO) |
| | E31.016 | For device having potential or surface barrier (EPO) |
| | E31.018 | Including ternary compound (e.g., HgCdTe) (EPO) |
| | E31.019 | Including, apart from doping material or other impurity, only Group III-V compound (EPO) |
| | E31.02 | For device having potential or surface barrier (EPO) |
| | E31.022 | Including ternary or quaternary compound (EPO) |
| | E31.023 | Including, apart from doping material or other impurity, only Group IV compound (e.g., SiC) (EPO) |
| | E31.024 | For device having potential or surface barrier (EPO) |
| | E31.025 | Characterized by doping material (EPO) |
| | E31.026 | Including, apart from doping material or other impurity, only compound other than Group II-VI, III-V, and IV compound (EPO) |
| | E31.032 | Characterized by semiconductor body shape, relative size, or disposition of semiconductor regions (EPO) |
| | E31.033 | Multiple quantum well structure (EPO) |
| | E31.034 | Characterized by amorphous semiconductor layer (EPO) |
| | E31.035 | Including, apart from doping material or other impurity, only Group IV element or compound (e.g., Si-SiGe superlattice) (EPO) |
| | E31.036 | Doping superlattice (e.g., nipi superlattice) (EPO) |
| | E31.037 | For device having potential or surface barrier (EPO) |
| | E31.04 | Characterized by semiconductor body crystalline structure or plane (EPO) |
| | E31.041 | Including thin film deposited on metallic or insulating substrate (EPO) |
| | E31.043 | Including polycrystalline semiconductor (EPO) |
| | E31.047 | Including amorphous semiconductor (EPO) |
| | E31.051 | Including other nonmonocrystalline material (e.g., semiconductor particles embedded in insulating material) (EPO) |
| | E31.052 | Adapted to control current flow through device (e.g., photoresistor) (EPO) |
| | E31.053 | For device having potential or surface barrier (e.g., phototransistor) (EPO) |
| | E31.054 | Device sensitive to infrared, visible, or ultraviolet radiation (EPO) |
| | E31.055 | Characterized by only one potential or surface barrier (EPO) |
| | E31.056 | Potential barrier being of point contact type (EPO) |
| | E31.057 | PN homojunction potential barrier (EPO) |
| | E31.058 |  Device comprising active layer formed only by Group II-VI compound (e.g., HgCdTe IR photodiode) (EPO) |
| | E31.059 | Device comprising active layer formed only by Group III-V compound (EPO) |
| | E31.06 | Device comprising active layer formed only by Group IV compound (EPO) |
| | E31.061 | PIN potential barrier (EPO) |
| | E31.063 | Potential barrier working in avalanche mode (e.g., avalanche photodiode) (EPO) |
| | E31.065 | Schottky potential barrier (EPO) |
| | E31.067 | PN heterojunction potential barrier (EPO) |
| | E31.068 | Characterized by two potential or surface barriers (EPO) |
| | E31.07 | Characterized by at least three potential barriers (EPO) |
| | E31.073 | Field-effect type (e.g., junction field-effect phototransistor) (EPO) |
| | E31.086 | Device sensitive to very short wavelength (e.g., X-ray, gamma-ray, or corpuscular radiation) (EPO) |