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Classification Resources
 
Class   257ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)
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When placing a mandatory classification in Class 257, a cross-reference classification is normally made in at least one of the appended E-subclasses.
[List of Pre Grant Publications for class 257 subclass 1][List of Patents for class 257 subclass 1]1 BULK EFFECT DEVICE
[List of Pre Grant Publications for class 257 subclass 9][List of Patents for class 257 subclass 9]9 THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE)
 [List of Pre Grant Publications for class 257 subclass 40][List of Patents for class 257 subclass 40]40 ORGANIC SEMICONDUCTOR MATERIAL
 [List of Pre Grant Publications for class 257 subclass 41][List of Patents for class 257 subclass 41]41 POINT CONTACT DEVICE
 [List of Pre Grant Publications for class 257 subclass 42][List of Patents for class 257 subclass 42]42 SEMICONDUCTOR IS SELENIUM OR TELLURIUM IN ELEMENTAL FORM
 [List of Pre Grant Publications for class 257 subclass 43][List of Patents for class 257 subclass 43]43 SEMICONDUCTOR IS AN OXIDE OF A METAL (E.G., CUO, ZNO) OR COPPER SULFIDE
[List of Pre Grant Publications for class 257 subclass 44][List of Patents for class 257 subclass 44]44 WITH METAL CONTACT ALLOYED TO ELEMENTAL SEMICONDUCTOR TYPE PN JUNCTION IN NONREGENERATIVE STRUCTURE
 [List of Pre Grant Publications for class 257 subclass 48][List of Patents for class 257 subclass 48]48 TEST OR CALIBRATION STRUCTURE
[List of Pre Grant Publications for class 257 subclass 49][List of Patents for class 257 subclass 49]49 NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION)
 [List of Pre Grant Publications for class 257 subclass 50][List of Patents for class 257 subclass 50]50 Subclass 50 indent level is 1 Non-single crystal, or recrystallized, active junction adapted to be electrically shorted (e.g., "anti-fuse" element)
 [List of Pre Grant Publications for class 257 subclass 51][List of Patents for class 257 subclass 51]51 Subclass 51 indent level is 1 Non-single crystal, or recrystallized, material forms active junction with single crystal material (e.g., monocrystal to polycrystal pn junction or heterojunction)
[List of Pre Grant Publications for class 257 subclass 52][List of Patents for class 257 subclass 52]52 Subclass 52 indent level is 1 Amorphous semiconductor material
 [List of Pre Grant Publications for class 257 subclass 64][List of Patents for class 257 subclass 64]64 Subclass 64 indent level is 1 Non-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation)
 [List of Pre Grant Publications for class 257 subclass 65][List of Patents for class 257 subclass 65]65 Subclass 65 indent level is 1 Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., Ge x Si 1- x, polycrystalline silicon with dangling bond modifier)
[List of Pre Grant Publications for class 257 subclass 66][List of Patents for class 257 subclass 66]66 Subclass 66 indent level is 1 Field effect device in non-single crystal, or recrystallized, Semiconductor material
 [List of Pre Grant Publications for class 257 subclass 73][List of Patents for class 257 subclass 73]73 Subclass 73 indent level is 1 Schottky barrier to polycrystalline semiconductor material
 [List of Pre Grant Publications for class 257 subclass 74][List of Patents for class 257 subclass 74]74 Subclass 74 indent level is 1 Plural recrystallized semiconductor layers (e.g., "3-dimensional integrated circuit")
 [List of Pre Grant Publications for class 257 subclass 75][List of Patents for class 257 subclass 75]75 Subclass 75 indent level is 1 Recrystallized semiconductor material
[List of Pre Grant Publications for class 257 subclass 76][List of Patents for class 257 subclass 76]76 SPECIFIED WIDE BAND GAP (1.5EV) SEMICONDUCTOR MATERIAL OTHER THAN GAASP OR GAALAS
[List of Pre Grant Publications for class 257 subclass 79][List of Patents for class 257 subclass 79]79 INCOHERENT LIGHT EMITTER STRUCTURE
[List of Pre Grant Publications for class 257 subclass 104][List of Patents for class 257 subclass 104]104 TUNNELING PN JUNCTION (E.G., ESAKI DIODE) DEVICE
[List of Pre Grant Publications for class 257 subclass 107][List of Patents for class 257 subclass 107]107 REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR)
 [List of Pre Grant Publications for class 257 subclass 108][List of Patents for class 257 subclass 108]108 Subclass 108 indent level is 1 Controlled by nonelectrical, nonoptical external signal (e.g., magnetic field, pressure, thermal)
[List of Pre Grant Publications for class 257 subclass 109][List of Patents for class 257 subclass 109]109 Subclass 109 indent level is 1 Having only two terminals and no control electrode (gate), e.g., Shockley diode
[List of Pre Grant Publications for class 257 subclass 113][List of Patents for class 257 subclass 113]113 Subclass 113 indent level is 1 With light activation
[List of Pre Grant Publications for class 257 subclass 119][List of Patents for class 257 subclass 119]119 Subclass 119 indent level is 1 Bidirectional rectifier with control electrode (gate) (e.g., Triac)
 [List of Pre Grant Publications for class 257 subclass 132][List of Patents for class 257 subclass 132]132 Subclass 132 indent level is 1 Five or more layer unidirectional structure
[List of Pre Grant Publications for class 257 subclass 133][List of Patents for class 257 subclass 133]133 Subclass 133 indent level is 1 Combined with field effect transistor
 [List of Pre Grant Publications for class 257 subclass 146][List of Patents for class 257 subclass 146]146 Subclass 146 indent level is 1 Combined with other solid-state active device in integrated structure
[List of Pre Grant Publications for class 257 subclass 147][List of Patents for class 257 subclass 147]147 Subclass 147 indent level is 1 With extended latchup current level (e.g., gate turn off "GTO" device)
 [List of Pre Grant Publications for class 257 subclass 154][List of Patents for class 257 subclass 154]154 Subclass 154 indent level is 1 With resistive region connecting separate sections of device
[List of Pre Grant Publications for class 257 subclass 155][List of Patents for class 257 subclass 155]155 Subclass 155 indent level is 1 With switching speed enhancement means (e.g., Schottky contact)
[List of Pre Grant Publications for class 257 subclass 157][List of Patents for class 257 subclass 157]157 Subclass 157 indent level is 1 With integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.)
 [List of Pre Grant Publications for class 257 subclass 162][List of Patents for class 257 subclass 162]162 Subclass 162 indent level is 1 Lateral structure
[List of Pre Grant Publications for class 257 subclass 163][List of Patents for class 257 subclass 163]163 Subclass 163 indent level is 1 Emitter region feature
 [List of Pre Grant Publications for class 257 subclass 167][List of Patents for class 257 subclass 167]167 Subclass 167 indent level is 1 Having at least four external electrodes
[List of Pre Grant Publications for class 257 subclass 168][List of Patents for class 257 subclass 168]168 Subclass 168 indent level is 1 With means to increase breakdown voltage
 [List of Pre Grant Publications for class 257 subclass 172][List of Patents for class 257 subclass 172]172 Subclass 172 indent level is 1 With means to lower "ON" voltage drop
[List of Pre Grant Publications for class 257 subclass 173][List of Patents for class 257 subclass 173]173 Subclass 173 indent level is 1 Device protection (e.g., from overvoltage)
[List of Pre Grant Publications for class 257 subclass 175][List of Patents for class 257 subclass 175]175 Subclass 175 indent level is 1 With means to control triggering (e.g., gate electrode configuration, Zener diode firing, dV/Dt control, transient control by ferrite bead, etc.)
[List of Pre Grant Publications for class 257 subclass 177][List of Patents for class 257 subclass 177]177 Subclass 177 indent level is 1 With housing or external electrode
[List of Pre Grant Publications for class 257 subclass 183][List of Patents for class 257 subclass 183]183 HETEROJUNCTION DEVICE
[List of Pre Grant Publications for class 257 subclass 202][List of Patents for class 257 subclass 202]202 GATE ARRAYS
 [List of Pre Grant Publications for class 257 subclass 212][List of Patents for class 257 subclass 212]212 CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE-BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR)
[List of Pre Grant Publications for class 257 subclass 213][List of Patents for class 257 subclass 213]213 FIELD EFFECT DEVICE
 [List of Pre Grant Publications for class 257 subclass 214][List of Patents for class 257 subclass 214]214 Subclass 214 indent level is 1 Charge injection device
[List of Pre Grant Publications for class 257 subclass 215][List of Patents for class 257 subclass 215]215 Subclass 215 indent level is 1 Charge transfer device
[List of Pre Grant Publications for class 257 subclass 216][List of Patents for class 257 subclass 216]216 Subclass 216 indent level is 2 Majority signal carrier (e.g., buried or bulk channel, or peristaltic)
[List of Pre Grant Publications for class 257 subclass 225][List of Patents for class 257 subclass 225]225 Subclass 225 indent level is 2 Non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.)
[List of Pre Grant Publications for class 257 subclass 235][List of Patents for class 257 subclass 235]235 Subclass 235 indent level is 2 Electrical input
 [List of Pre Grant Publications for class 257 subclass 239][List of Patents for class 257 subclass 239]239 Subclass 239 indent level is 2 Signal charge detection type (e.g., floating diffusion or floating gate non-destructive output)
 [List of Pre Grant Publications for class 257 subclass 240][List of Patents for class 257 subclass 240]240 Subclass 240 indent level is 2 Changing width or direction of channel (e.g., meandering channel)
 [List of Pre Grant Publications for class 257 subclass 241][List of Patents for class 257 subclass 241]241 Subclass 241 indent level is 2 Multiple channels (e.g., converging or diverging or parallel channels)
 [List of Pre Grant Publications for class 257 subclass 242][List of Patents for class 257 subclass 242]242 Subclass 242 indent level is 2 Vertical charge transfer
 [List of Pre Grant Publications for class 257 subclass 243][List of Patents for class 257 subclass 243]243 Subclass 243 indent level is 2 Channel confinement
 [List of Pre Grant Publications for class 257 subclass 244][List of Patents for class 257 subclass 244]244 Subclass 244 indent level is 2 Comprising a groove
[List of Pre Grant Publications for class 257 subclass 245][List of Patents for class 257 subclass 245]245 Subclass 245 indent level is 2 Structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel)
 [List of Pre Grant Publications for class 257 subclass 251][List of Patents for class 257 subclass 251]251 Subclass 251 indent level is 2 Substantially incomplete signal charge transfer (e.g., bucket brigade)
[List of Pre Grant Publications for class 257 subclass 252][List of Patents for class 257 subclass 252]252 Subclass 252 indent level is 1 Responsive to non-optical, non-electrical signal
 [List of Pre Grant Publications for class 257 subclass 255][List of Patents for class 257 subclass 255]255 Subclass 255 indent level is 1 With current flow along specified crystal axis (e.g., axis of maximum carrier mobility)
[List of Pre Grant Publications for class 257 subclass 256][List of Patents for class 257 subclass 256]256 Subclass 256 indent level is 1 Junction field effect transistor (unipolar transistor)
[List of Pre Grant Publications for class 257 subclass 257][List of Patents for class 257 subclass 257]257 Subclass 257 indent level is 2 Light responsive or combined with light responsive device
 [List of Pre Grant Publications for class 257 subclass 259][List of Patents for class 257 subclass 259]259 Subclass 259 indent level is 2 Elongated active region acts as transmission line or distributed active element (e.g., "transmission line" field effect transistor)
 [List of Pre Grant Publications for class 257 subclass 260][List of Patents for class 257 subclass 260]260 Subclass 260 indent level is 2 Same channel controlled by both junction and insulated gate electrodes, or by both Schottky barrier and pn junction gates (e.g., "taper isolated" memory cell)
 [List of Pre Grant Publications for class 257 subclass 261][List of Patents for class 257 subclass 261]261 Subclass 261 indent level is 2 Junction gate region free of direct electrical connection (e.g., floating junction gate memory cell structure)
 [List of Pre Grant Publications for class 257 subclass 262][List of Patents for class 257 subclass 262]262 Subclass 262 indent level is 2 Combined with insulated gate field effect transistor (IGFET)
[List of Pre Grant Publications for class 257 subclass 263][List of Patents for class 257 subclass 263]263 Subclass 263 indent level is 2 Vertical controlled current path
[List of Pre Grant Publications for class 257 subclass 268][List of Patents for class 257 subclass 268]268 Subclass 268 indent level is 2 Enhancement mode
 [List of Pre Grant Publications for class 257 subclass 270][List of Patents for class 257 subclass 270]270 Subclass 270 indent level is 2 Plural, separately connected, gates control same channel region
 [List of Pre Grant Publications for class 257 subclass 271][List of Patents for class 257 subclass 271]271 Subclass 271 indent level is 2 Load element or constant current source (e.g., with source to gate connection)
[List of Pre Grant Publications for class 257 subclass 272][List of Patents for class 257 subclass 272]272 Subclass 272 indent level is 2 Junction field effect transistor in integrated circuit
 [List of Pre Grant Publications for class 257 subclass 279][List of Patents for class 257 subclass 279]279 Subclass 279 indent level is 2 Pn junction gate in compound semiconductor material (e.g., GaAs)
[List of Pre Grant Publications for class 257 subclass 280][List of Patents for class 257 subclass 280]280 Subclass 280 indent level is 2 With Schottky gate
 [List of Pre Grant Publications for class 257 subclass 285][List of Patents for class 257 subclass 285]285 Subclass 285 indent level is 2 With profiled channel dopant concentration or profiled gate region dopant concentration (e.g., maximum dopant concentration below surface)
 [List of Pre Grant Publications for class 257 subclass 286][List of Patents for class 257 subclass 286]286 Subclass 286 indent level is 2 With non-uniform channel thickness or width
 [List of Pre Grant Publications for class 257 subclass 287][List of Patents for class 257 subclass 287]287 Subclass 287 indent level is 2 With multiple channels or channel segments connected in parallel, or with channel much wider than length between source and drain (e.g., power JFET)
[List of Pre Grant Publications for class 257 subclass 288][List of Patents for class 257 subclass 288]288 Subclass 288 indent level is 1 Having insulated electrode (e.g., MOSFET, MOS diode)
 [List of Pre Grant Publications for class 257 subclass 289][List of Patents for class 257 subclass 289]289 Subclass 289 indent level is 2 Significant semiconductor chemical compound in bulk crystal (e.g., GaAs)
[List of Pre Grant Publications for class 257 subclass 290][List of Patents for class 257 subclass 290]290 Subclass 290 indent level is 2 Light responsive or combined with light responsive device
 [List of Pre Grant Publications for class 257 subclass 295][List of Patents for class 257 subclass 295]295 Subclass 295 indent level is 2 With ferroelectric material layer
[List of Pre Grant Publications for class 257 subclass 296][List of Patents for class 257 subclass 296]296 Subclass 296 indent level is 2 Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell)
[List of Pre Grant Publications for class 257 subclass 314][List of Patents for class 257 subclass 314]314 Subclass 314 indent level is 2 Variable threshold (e.g., floating gate memory device)
[List of Pre Grant Publications for class 257 subclass 327][List of Patents for class 257 subclass 327]327 Subclass 327 indent level is 2 Short channel insulated gate field effect transistor
[List of Pre Grant Publications for class 257 subclass 347][List of Patents for class 257 subclass 347]347 Subclass 347 indent level is 2 Single crystal semiconductor layer on insulating substrate (SOI)
[List of Pre Grant Publications for class 257 subclass 355][List of Patents for class 257 subclass 355]355 Subclass 355 indent level is 2 With overvoltage protective means
 [List of Pre Grant Publications for class 257 subclass 364][List of Patents for class 257 subclass 364]364 Subclass 364 indent level is 2 With resistive gate electrode
[List of Pre Grant Publications for class 257 subclass 365][List of Patents for class 257 subclass 365]365 Subclass 365 indent level is 2 With plural, separately connected, gate electrodes in same device
 [List of Pre Grant Publications for class 257 subclass 367][List of Patents for class 257 subclass 367]367 Subclass 367 indent level is 2 Insulated gate controlled breakdown of pn junction (e.g., field plate diode)
[List of Pre Grant Publications for class 257 subclass 368][List of Patents for class 257 subclass 368]368 Subclass 368 indent level is 2 Insulated gate field effect transistor in integrated circuit
[List of Pre Grant Publications for class 257 subclass 369][List of Patents for class 257 subclass 369]369 Subclass 369 indent level is 3 Complementary insulated gate field effect transistors
 [List of Pre Grant Publications for class 257 subclass 378][List of Patents for class 257 subclass 378]378 Subclass 378 indent level is 3 Combined with bipolar transistor
[List of Pre Grant Publications for class 257 subclass 379][List of Patents for class 257 subclass 379]379 Subclass 379 indent level is 3 Combined with passive components (e.g., resistors)
[List of Pre Grant Publications for class 257 subclass 382][List of Patents for class 257 subclass 382]382 Subclass 382 indent level is 3 With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide)
[List of Pre Grant Publications for class 257 subclass 386][List of Patents for class 257 subclass 386]386 Subclass 386 indent level is 3 With means to reduce parasitic capacitance
[List of Pre Grant Publications for class 257 subclass 390][List of Patents for class 257 subclass 390]390 Subclass 390 indent level is 3 Matrix or array of field effect transistors (e.g., array of FETs only some of which are completed, or structure for mask programmed read-only memory (ROM))
 [List of Pre Grant Publications for class 257 subclass 392][List of Patents for class 257 subclass 392]392 Subclass 392 indent level is 3 Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode)
 [List of Pre Grant Publications for class 257 subclass 393][List of Patents for class 257 subclass 393]393 Subclass 393 indent level is 3 Insulated gate field effect transistor adapted to function as load element for switching insulated gate field effect transistor
[List of Pre Grant Publications for class 257 subclass 394][List of Patents for class 257 subclass 394]394 Subclass 394 indent level is 3 With means to prevent parasitic conduction channels
 [List of Pre Grant Publications for class 257 subclass 401][List of Patents for class 257 subclass 401]401 Subclass 401 indent level is 3 With specified physical layout (e.g., ring gate, source/drain regions shared between plural FETs, plural sections connected in parallel to form power MOSFET)
[List of Pre Grant Publications for class 257 subclass 402][List of Patents for class 257 subclass 402]402 Subclass 402 indent level is 2 With permanent threshold adjustment (e.g., depletion mode)
 [List of Pre Grant Publications for class 257 subclass 408][List of Patents for class 257 subclass 408]408 Subclass 408 indent level is 2 Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, LDD device)
 [List of Pre Grant Publications for class 257 subclass 409][List of Patents for class 257 subclass 409]409 Subclass 409 indent level is 2 With means to increase breakdown voltage (e.g., field shield electrode, guard ring, etc.)
[List of Pre Grant Publications for class 257 subclass 410][List of Patents for class 257 subclass 410]410 Subclass 410 indent level is 2 Gate insulator includes material (including air or vacuum) other than SiO 2
[List of Pre Grant Publications for class 257 subclass 412][List of Patents for class 257 subclass 412]412 Subclass 412 indent level is 2 Gate electrode of refractory material (e.g., polysilicon or a silicide of a refractory or platinum group metal)
[List of Pre Grant Publications for class 257 subclass 414][List of Patents for class 257 subclass 414]414 RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS)
[List of Pre Grant Publications for class 257 subclass 415][List of Patents for class 257 subclass 415]415 Subclass 415 indent level is 1 Physical deformation
[List of Pre Grant Publications for class 257 subclass 421][List of Patents for class 257 subclass 421]421 Subclass 421 indent level is 1 Magnetic field
[List of Pre Grant Publications for class 257 subclass 428][List of Patents for class 257 subclass 428]428 Subclass 428 indent level is 1 Electromagnetic or particle radiation
[List of Pre Grant Publications for class 257 subclass 429][List of Patents for class 257 subclass 429]429 Subclass 429 indent level is 2 Charged or elementary particles
[List of Pre Grant Publications for class 257 subclass 431][List of Patents for class 257 subclass 431]431 Subclass 431 indent level is 2 Light
 [List of Pre Grant Publications for class 257 subclass 432][List of Patents for class 257 subclass 432]432 Subclass 432 indent level is 3 With optical element
[List of Pre Grant Publications for class 257 subclass 433][List of Patents for class 257 subclass 433]433 Subclass 433 indent level is 3 With housing or encapsulation
 [List of Pre Grant Publications for class 257 subclass 435][List of Patents for class 257 subclass 435]435 Subclass 435 indent level is 3 With optical shield or mask means
[List of Pre Grant Publications for class 257 subclass 436][List of Patents for class 257 subclass 436]436 Subclass 436 indent level is 3 With means for increasing light absorption (e.g., redirection of unabsorbed light)
 [List of Pre Grant Publications for class 257 subclass 438][List of Patents for class 257 subclass 438]438 Subclass 438 indent level is 3 Avalanche junction
 [List of Pre Grant Publications for class 257 subclass 439][List of Patents for class 257 subclass 439]439 Subclass 439 indent level is 3 Containing dopant adapted for photoionization
 [List of Pre Grant Publications for class 257 subclass 440][List of Patents for class 257 subclass 440]440 Subclass 440 indent level is 3 With different sensor portions responsive to different wavelengths (e.g., color imager)
[List of Pre Grant Publications for class 257 subclass 441][List of Patents for class 257 subclass 441]441 Subclass 441 indent level is 3 Narrow band gap semiconductor (<<1eV) (e.g., PbSnTe)
[List of Pre Grant Publications for class 257 subclass 443][List of Patents for class 257 subclass 443]443 Subclass 443 indent level is 3 Matrix or array (e.g., single line arrays)
[List of Pre Grant Publications for class 257 subclass 449][List of Patents for class 257 subclass 449]449 Subclass 449 indent level is 3 Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO 2 , indium tin oxide))
 [List of Pre Grant Publications for class 257 subclass 458][List of Patents for class 257 subclass 458]458 Subclass 458 indent level is 3 PIN detector, including combinations with non-light responsive active devices
 [List of Pre Grant Publications for class 257 subclass 459][List of Patents for class 257 subclass 459]459 Subclass 459 indent level is 3 With particular contact geometry (e.g., ring or grid, or bonding pad arrangement)
 [List of Pre Grant Publications for class 257 subclass 460][List of Patents for class 257 subclass 460]460 Subclass 460 indent level is 3 With backside illumination (e.g., with a thinned central area or non-absorbing substrate)
[List of Pre Grant Publications for class 257 subclass 461][List of Patents for class 257 subclass 461]461 Subclass 461 indent level is 3 Light responsive pn junction
 [List of Pre Grant Publications for class 257 subclass 466][List of Patents for class 257 subclass 466]466 Subclass 466 indent level is 3 External physical configuration of semiconductor (e.g., mesas, grooves)
[List of Pre Grant Publications for class 257 subclass 467][List of Patents for class 257 subclass 467]467 Subclass 467 indent level is 1 Temperature
[List of Pre Grant Publications for class 257 subclass 471][List of Patents for class 257 subclass 471]471 SCHOTTKY BARRIER
[List of Pre Grant Publications for class 257 subclass 487][List of Patents for class 257 subclass 487]487 WITH MEANS TO INCREASE BREAKDOWN VOLTAGE THRESHOLD
[List of Pre Grant Publications for class 257 subclass 497][List of Patents for class 257 subclass 497]497 PUNCHTHROUGH STRUCTURE DEVICE (E.G., PUNCHTHROUGH TRANSISTOR, CAMEL BARRIER DIODE)
[List of Pre Grant Publications for class 257 subclass 499][List of Patents for class 257 subclass 499]499 INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS
[List of Pre Grant Publications for class 257 subclass 500][List of Patents for class 257 subclass 500]500 Subclass 500 indent level is 1 Including high voltage or high power devices isolated from low voltage or low power devices in the same integrated circuit
 [List of Pre Grant Publications for class 257 subclass 503][List of Patents for class 257 subclass 503]503 Subclass 503 indent level is 1 With contact or metallization configuration to reduce parasitic coupling (e.g., separate ground pads for different parts of integrated circuit)
 [List of Pre Grant Publications for class 257 subclass 504][List of Patents for class 257 subclass 504]504 Subclass 504 indent level is 1 Including means for establishing a depletion region throughout a semiconductor layer for isolating devices in different portions of the layer (e.g., "JFET" isolation)
 [List of Pre Grant Publications for class 257 subclass 505][List of Patents for class 257 subclass 505]505 Subclass 505 indent level is 1 With polycrystalline semiconductor isolation region in direct contact with single crystal active semiconductor material
[List of Pre Grant Publications for class 257 subclass 506][List of Patents for class 257 subclass 506]506 Subclass 506 indent level is 1 Including dielectric isolation means
 [List of Pre Grant Publications for class 257 subclass 507][List of Patents for class 257 subclass 507]507 Subclass 507 indent level is 2 With single crystal insulating substrate (e.g., sapphire)
 [List of Pre Grant Publications for class 257 subclass 508][List of Patents for class 257 subclass 508]508 Subclass 508 indent level is 2 With metallic conductor within isolating dielectric or between semiconductor and isolating dielectric (e.g., metal shield layer or internal connection layer)
[List of Pre Grant Publications for class 257 subclass 509][List of Patents for class 257 subclass 509]509 Subclass 509 indent level is 2 Combined with pn junction isolation (e.g., isoplanar, LOCOS)
 [List of Pre Grant Publications for class 257 subclass 522][List of Patents for class 257 subclass 522]522 Subclass 522 indent level is 2 Air isolation (e.g., beam lead supported semiconductor islands)
 [List of Pre Grant Publications for class 257 subclass 523][List of Patents for class 257 subclass 523]523 Subclass 523 indent level is 2 Isolation by region of intrinsic (undoped) semiconductor material (e.g., including region physically damaged by proton bombardment)
[List of Pre Grant Publications for class 257 subclass 524][List of Patents for class 257 subclass 524]524 Subclass 524 indent level is 2 Full dielectric isolation with polycrystalline semiconductor substrate
[List of Pre Grant Publications for class 257 subclass 526][List of Patents for class 257 subclass 526]526 Subclass 526 indent level is 2 With bipolar transistor structure
[List of Pre Grant Publications for class 257 subclass 528][List of Patents for class 257 subclass 528]528 Subclass 528 indent level is 1 Passive components in ICs
[List of Pre Grant Publications for class 257 subclass 544][List of Patents for class 257 subclass 544]544 Subclass 544 indent level is 1 With pn junction isolation
 [List of Pre Grant Publications for class 257 subclass 545][List of Patents for class 257 subclass 545]545 Subclass 545 indent level is 2 With means to control isolation junction capacitance (e.g., lightly doped layer at isolation junction to increase depletion layer width)
 [List of Pre Grant Publications for class 257 subclass 546][List of Patents for class 257 subclass 546]546 Subclass 546 indent level is 2 With structural means to protect against excess or reversed polarity voltage
 [List of Pre Grant Publications for class 257 subclass 547][List of Patents for class 257 subclass 547]547 Subclass 547 indent level is 2 With structural means to control parasitic transistor action or leakage current
 [List of Pre Grant Publications for class 257 subclass 548][List of Patents for class 257 subclass 548]548 Subclass 548 indent level is 2 At least three regions of alternating conductivity types with dopant concentration gradients decreasing from surface of semiconductor (e.g., "triple-diffused" integrated circuit)
 [List of Pre Grant Publications for class 257 subclass 549][List of Patents for class 257 subclass 549]549 Subclass 549 indent level is 2 With substrate and lightly doped surface layer of same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit)
 [List of Pre Grant Publications for class 257 subclass 550][List of Patents for class 257 subclass 550]550 Subclass 550 indent level is 2 With lightly doped surface layer of one conductivity type on substrate of opposite conductivity type, having plural heavily doped portions of the one conductivity type between the layer and substrate, different ones of the heavily doped portions having differing depths or physical extent
 [List of Pre Grant Publications for class 257 subclass 551][List of Patents for class 257 subclass 551]551 Subclass 551 indent level is 2 Including voltage reference element (e.g., avalanche diode, so-called "Zener diode" with breakdown voltage greater than 6 volts or with positive temperature coefficient of breakdown voltage)
[List of Pre Grant Publications for class 257 subclass 552][List of Patents for class 257 subclass 552]552 Subclass 552 indent level is 2 With bipolar transistor structure
[List of Pre Grant Publications for class 257 subclass 557][List of Patents for class 257 subclass 557]557 Subclass 557 indent level is 1 Lateral bipolar transistor structure
[List of Pre Grant Publications for class 257 subclass 563][List of Patents for class 257 subclass 563]563 Subclass 563 indent level is 1 With multiple separately connected emitter, collector, or base regions in same transistor structure
[List of Pre Grant Publications for class 257 subclass 565][List of Patents for class 257 subclass 565]565 BIPOLAR TRANSISTOR STRUCTURE
[List of Pre Grant Publications for class 257 subclass 566][List of Patents for class 257 subclass 566]566 Subclass 566 indent level is 1 Plural non-isolated transistor structures in same structure
 [List of Pre Grant Publications for class 257 subclass 577][List of Patents for class 257 subclass 577]577 Subclass 577 indent level is 1 Including additional component in same, non-isolated structure (e.g., transistor with diode, transistor with resistor, etc.)
[List of Pre Grant Publications for class 257 subclass 578][List of Patents for class 257 subclass 578]578 Subclass 578 indent level is 1 With enlarged emitter area (e.g., power device)
 [List of Pre Grant Publications for class 257 subclass 585][List of Patents for class 257 subclass 585]585 Subclass 585 indent level is 1 With means to increase inverse gain
 [List of Pre Grant Publications for class 257 subclass 586][List of Patents for class 257 subclass 586]586 Subclass 586 indent level is 1 With non-planar semiconductor surface (e.g., groove, mesa, bevel, etc.)
[List of Pre Grant Publications for class 257 subclass 587][List of Patents for class 257 subclass 587]587 Subclass 587 indent level is 1 With specified electrode means
 [List of Pre Grant Publications for class 257 subclass 589][List of Patents for class 257 subclass 589]589 Subclass 589 indent level is 1 Avalanche transistor
 [List of Pre Grant Publications for class 257 subclass 590][List of Patents for class 257 subclass 590]590 Subclass 590 indent level is 1 With means to reduce minority carrier lifetime (e.g., region of deep level dopant or region of crystal damage)
 [List of Pre Grant Publications for class 257 subclass 591][List of Patents for class 257 subclass 591]591 Subclass 591 indent level is 1 With emitter region having specified doping concentration profile (e.g., high-low concentration step)
 [List of Pre Grant Publications for class 257 subclass 592][List of Patents for class 257 subclass 592]592 Subclass 592 indent level is 1 With base region having specified doping concentration profile or specified configuration (e.g., inactive base more heavily doped than active base or base region has constant doping concentration portion (e.g., epitaxial base))
 [List of Pre Grant Publications for class 257 subclass 593][List of Patents for class 257 subclass 593]593 Subclass 593 indent level is 1 With means to increase current gain or operating frequency
 [List of Pre Grant Publications for class 257 subclass 594][List of Patents for class 257 subclass 594]594 WITH GROOVE TO DEFINE PLURAL DIODES
[List of Pre Grant Publications for class 257 subclass 595][List of Patents for class 257 subclass 595]595 VOLTAGE VARIABLE CAPACITANCE DEVICE
[List of Pre Grant Publications for class 257 subclass 603][List of Patents for class 257 subclass 603]603 AVALANCHE DIODE (E.G., SO-CALLED "ZENER" DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS)
[List of Pre Grant Publications for class 257 subclass 607][List of Patents for class 257 subclass 607]607 WITH SPECIFIED DOPANT (E.G., PLURAL DOPANTS OF SAME CONDUCTIVITY IN SAME REGION)
[List of Pre Grant Publications for class 257 subclass 613][List of Patents for class 257 subclass 613]613 INCLUDING SEMICONDUCTOR MATERIAL OTHER THAN SILICON OR GALLIUM ARSENIDE (GAAS) (E.G., PB X SN 1-X TE)
 [List of Pre Grant Publications for class 257 subclass 617][List of Patents for class 257 subclass 617]617 INCLUDING REGION CONTAINING CRYSTAL DAMAGE
[List of Pre Grant Publications for class 257 subclass 618][List of Patents for class 257 subclass 618]618 PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.)
[List of Pre Grant Publications for class 257 subclass 629][List of Patents for class 257 subclass 629]629 WITH MEANS TO CONTROL SURFACE EFFECTS
[List of Pre Grant Publications for class 257 subclass 653][List of Patents for class 257 subclass 653]653 WITH SPECIFIED SHAPE OF PN JUNCTION
[List of Pre Grant Publications for class 257 subclass 655][List of Patents for class 257 subclass 655]655 WITH SPECIFIED IMPURITY CONCENTRATION GRADIENT
 [List of Pre Grant Publications for class 257 subclass 658][List of Patents for class 257 subclass 658]658 PLATE TYPE RECTIFIER ARRAY
[List of Pre Grant Publications for class 257 subclass 659][List of Patents for class 257 subclass 659]659 WITH SHIELDING (E.G., ELECTRICAL OR MAGNETIC SHIELDING, OR FROM ELECTROMAGNETIC RADIATION OR CHARGED PARTICLES)
[List of Pre Grant Publications for class 257 subclass 661][List of Patents for class 257 subclass 661]661 SUPERCONDUCTIVE CONTACT OR LEAD
 [List of Pre Grant Publications for class 257 subclass 664][List of Patents for class 257 subclass 664]664 TRANSMISSION LINE LEAD (E.G., STRIPLINE, COAX, ETC.)
 [List of Pre Grant Publications for class 257 subclass 665][List of Patents for class 257 subclass 665]665 CONTACTS OR LEADS INCLUDING FUSIBLE LINK MEANS OR NOISE SUPPRESSION MEANS
[List of Pre Grant Publications for class 257 subclass 666][List of Patents for class 257 subclass 666]666 LEAD FRAME
[List of Pre Grant Publications for class 257 subclass 678][List of Patents for class 257 subclass 678]678 HOUSING OR PACKAGE
 [List of Pre Grant Publications for class 257 subclass 679][List of Patents for class 257 subclass 679]679 Subclass 679 indent level is 1 Smart (e.g., credit) card package
[List of Pre Grant Publications for class 257 subclass 680][List of Patents for class 257 subclass 680]680 Subclass 680 indent level is 1 With window means
 [List of Pre Grant Publications for class 257 subclass 682][List of Patents for class 257 subclass 682]682 Subclass 682 indent level is 1 With desiccant, getter, or gas filling
 [List of Pre Grant Publications for class 257 subclass 683][List of Patents for class 257 subclass 683]683 Subclass 683 indent level is 1 With means to prevent explosion of package
 [List of Pre Grant Publications for class 257 subclass 684][List of Patents for class 257 subclass 684]684 Subclass 684 indent level is 1 With semiconductor element forming part (e.g., base, of housing)
[List of Pre Grant Publications for class 257 subclass 685][List of Patents for class 257 subclass 685]685 Subclass 685 indent level is 1 Multiple housings
 [List of Pre Grant Publications for class 257 subclass 687][List of Patents for class 257 subclass 687]687 Subclass 687 indent level is 1 Housing or package filled with solid or liquid electrically insulating material
[List of Pre Grant Publications for class 257 subclass 688][List of Patents for class 257 subclass 688]688 Subclass 688 indent level is 1 With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, e.g., ring
[List of Pre Grant Publications for class 257 subclass 690][List of Patents for class 257 subclass 690]690 Subclass 690 indent level is 1 With contact or lead
[List of Pre Grant Publications for class 257 subclass 701][List of Patents for class 257 subclass 701]701 Subclass 701 indent level is 1 Insulating material
[List of Pre Grant Publications for class 257 subclass 708][List of Patents for class 257 subclass 708]708 Subclass 708 indent level is 1 Entirely of metal except for feedthrough
[List of Pre Grant Publications for class 257 subclass 712][List of Patents for class 257 subclass 712]712 Subclass 712 indent level is 1 With provision for cooling the housing or its contents
[List of Pre Grant Publications for class 257 subclass 723][List of Patents for class 257 subclass 723]723 Subclass 723 indent level is 1 For plural devices
 [List of Pre Grant Publications for class 257 subclass 727][List of Patents for class 257 subclass 727]727 Subclass 727 indent level is 1 Device held in place by clamping
 [List of Pre Grant Publications for class 257 subclass 728][List of Patents for class 257 subclass 728]728 Subclass 728 indent level is 1 For high frequency (e.g., microwave) device
 [List of Pre Grant Publications for class 257 subclass 729][List of Patents for class 257 subclass 729]729 Subclass 729 indent level is 1 Portion of housing of specific materials
 [List of Pre Grant Publications for class 257 subclass 730][List of Patents for class 257 subclass 730]730 Subclass 730 indent level is 1 Outside periphery of package having specified shape or configuration
[List of Pre Grant Publications for class 257 subclass 731][List of Patents for class 257 subclass 731]731 Subclass 731 indent level is 1 With housing mount
[List of Pre Grant Publications for class 257 subclass 734][List of Patents for class 257 subclass 734]734 COMBINED WITH ELECTRICAL CONTACT OR LEAD
[List of Pre Grant Publications for class 257 subclass 735][List of Patents for class 257 subclass 735]735 Subclass 735 indent level is 1 Beam leads (i.e., leads that extend beyond the ends or sides of a chip component)
[List of Pre Grant Publications for class 257 subclass 737][List of Patents for class 257 subclass 737]737 Subclass 737 indent level is 1 Bump leads
 [List of Pre Grant Publications for class 257 subclass 739][List of Patents for class 257 subclass 739]739 Subclass 739 indent level is 1 With textured surface
 [List of Pre Grant Publications for class 257 subclass 740][List of Patents for class 257 subclass 740]740 Subclass 740 indent level is 1 With means to prevent contact from penetrating shallow PN junction (e.g., prevention of aluminum "spiking")
[List of Pre Grant Publications for class 257 subclass 741][List of Patents for class 257 subclass 741]741 Subclass 741 indent level is 1 Of specified material other than unalloyed aluminum
[List of Pre Grant Publications for class 257 subclass 742][List of Patents for class 257 subclass 742]742 Subclass 742 indent level is 2 With a semiconductor conductivity substitution type dopant (e.g., germanium in the case of a gallium arsenide semiconductor) in a contact metal)
[List of Pre Grant Publications for class 257 subclass 744][List of Patents for class 257 subclass 744]744 Subclass 744 indent level is 2 For compound semiconductor material
 [List of Pre Grant Publications for class 257 subclass 746][List of Patents for class 257 subclass 746]746 Subclass 746 indent level is 2 Composite material (e.g., fibers or strands embedded in solid matrix)
[List of Pre Grant Publications for class 257 subclass 747][List of Patents for class 257 subclass 747]747 Subclass 747 indent level is 2 With thermal expansion matching of contact or lead material to semiconductor active device
 [List of Pre Grant Publications for class 257 subclass 749][List of Patents for class 257 subclass 749]749 Subclass 749 indent level is 2 At least portion of which is transparent to ultraviolet, visible or infrared light
[List of Pre Grant Publications for class 257 subclass 750][List of Patents for class 257 subclass 750]750 Subclass 750 indent level is 2 Layered
 [List of Pre Grant Publications for class 257 subclass 767][List of Patents for class 257 subclass 767]767 Subclass 767 indent level is 2 Resistive to electromigration or diffusion of the contact or lead material
[List of Pre Grant Publications for class 257 subclass 768][List of Patents for class 257 subclass 768]768 Subclass 768 indent level is 2 Refractory or platinum group metal or alloy or silicide thereof
 [List of Pre Grant Publications for class 257 subclass 771][List of Patents for class 257 subclass 771]771 Subclass 771 indent level is 2 Alloy containing aluminum
 [List of Pre Grant Publications for class 257 subclass 772][List of Patents for class 257 subclass 772]772 Subclass 772 indent level is 2 Solder composition
[List of Pre Grant Publications for class 257 subclass 773][List of Patents for class 257 subclass 773]773 Subclass 773 indent level is 1 Of specified configuration
 [List of Pre Grant Publications for class 257 subclass 777][List of Patents for class 257 subclass 777]777 Subclass 777 indent level is 1 Chip mounted on chip
 [List of Pre Grant Publications for class 257 subclass 778][List of Patents for class 257 subclass 778]778 Subclass 778 indent level is 1 Flip chip
 [List of Pre Grant Publications for class 257 subclass 779][List of Patents for class 257 subclass 779]779 Subclass 779 indent level is 1 Solder wettable contact, lead, or bond
[List of Pre Grant Publications for class 257 subclass 780][List of Patents for class 257 subclass 780]780 Subclass 780 indent level is 1 Ball or nail head type contact, lead, or bond
[List of Pre Grant Publications for class 257 subclass 782][List of Patents for class 257 subclass 782]782 Subclass 782 indent level is 1 Die bond
 [List of Pre Grant Publications for class 257 subclass 784][List of Patents for class 257 subclass 784]784 Subclass 784 indent level is 1 Wire contact, lead, or bond
 [List of Pre Grant Publications for class 257 subclass 785][List of Patents for class 257 subclass 785]785 Subclass 785 indent level is 1 By pressure alone
 [List of Pre Grant Publications for class 257 subclass 786][List of Patents for class 257 subclass 786]786 Subclass 786 indent level is 1 Configuration or pattern of bonds
[List of Pre Grant Publications for class 257 subclass 787][List of Patents for class 257 subclass 787]787 ENCAPSULATED
 [List of Pre Grant Publications for class 257 subclass 797][List of Patents for class 257 subclass 797]797 ALIGNMENT MARKS
 [List of Pre Grant Publications for class 257 subclass 798][List of Patents for class 257 subclass 798]798 MISCELLANEOUS
 
E-SUBCLASSES
 
The following subclasses beginning with the letter E are E-subclasses. Each E-subclass corresponds in scope to a classification in a foreign classification system, for example, the European Classification system (ECLA). The foreign classification equivalent to an E-subclass is identified in the subclass definition. In addition to US documents classified in E-subclasses by US examiners, documents are regularly classified in E-subclasses according to the classification practices of any foreign Offices identified in parentheses at the end of the title. For example, "(EPO)" at the end of a title indicates both European and US patent documents, as classified by the EPO, are regularly added to the subclass. E-subclasses may contain subject matter outside the scope of this class.Consult their definitions, or the documents themselves to clarify or interpret titles.
[List of Pre Grant Publications for class 257 subclass E47.001][List of Patents for class 257 subclass E47.001]E47.001 BULK NEGATIVE RESISTANCE EFFECT DEVICES, E.G., GUNN-EFFECT DEVICES, PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO)
[List of Pre Grant Publications for class 257 subclass E39.001][List of Patents for class 257 subclass E39.001]E39.001 DEVICES USING SUPERCONDUCTIVITY, PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO)
[List of Pre Grant Publications for class 257 subclass E51.001][List of Patents for class 257 subclass E51.001]E51.001 ORGANIC SOLID STATE DEVICES, PROCESSES OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES OR OF PARTS THEREOF
[List of Pre Grant Publications for class 257 subclass E51.002][List of Patents for class 257 subclass E51.002]E51.002 Subclass E51.002 indent level is 1 Structural detail of device (EPO)
[List of Pre Grant Publications for class 257 subclass E51.003][List of Patents for class 257 subclass E51.003]E51.003 Subclass E51.003 indent level is 2 Organic solid-state device adapted for rectifying, amplifying, oscillating, or switching, or capacitors or resistors with potential or surface barrier (EPO)
[List of Pre Grant Publications for class 257 subclass E51.012][List of Patents for class 257 subclass E51.012]E51.012 Subclass E51.012 indent level is 2 Radiation-sensitive organic solid-state device (EPO)
[List of Pre Grant Publications for class 257 subclass E51.018][List of Patents for class 257 subclass E51.018]E51.018 Subclass E51.018 indent level is 2 Light-emitting organic solid-state device with potential or surface barrier (EPO)
 [List of Pre Grant Publications for class 257 subclass E51.023][List of Patents for class 257 subclass E51.023]E51.023 Subclass E51.023 indent level is 2 Molecular electronic device (EPO)
[List of Pre Grant Publications for class 257 subclass E51.024][List of Patents for class 257 subclass E51.024]E51.024 Subclass E51.024 indent level is 1 Selection of material for organic solid-state device (EPO)
 [List of Pre Grant Publications for class 257 subclass E51.025][List of Patents for class 257 subclass E51.025]E51.025 Subclass E51.025 indent level is 2 For organic solid-state device adapted for rectifying, amplifying, oscillating, or switching, or capacitors or resistors with potential or surface barrier (EPO)
 [List of Pre Grant Publications for class 257 subclass E51.026][List of Patents for class 257 subclass E51.026]E51.026 Subclass E51.026 indent level is 2 For radiation-sensitive or light-emitting organic solid-state device with potential or surface barrier (EPO)
[List of Pre Grant Publications for class 257 subclass E51.027][List of Patents for class 257 subclass E51.027]E51.027 Subclass E51.027 indent level is 2 Organic polymer or oligomer (EPO)
[List of Pre Grant Publications for class 257 subclass E51.038][List of Patents for class 257 subclass E51.038]E51.038 Subclass E51.038 indent level is 2 Carbon-containing materials (EPO)
[List of Pre Grant Publications for class 257 subclass E51.041][List of Patents for class 257 subclass E51.041]E51.041 Subclass E51.041 indent level is 2 Coordination compound (e.g., porphyrin, phthalocyanine, metal(II) polypyridine complexes) (EPO)
 [List of Pre Grant Publications for class 257 subclass E51.045][List of Patents for class 257 subclass E51.045]E51.045 Subclass E51.045 indent level is 2 Biomolecule or macromolecule (e.g., proteins, ATP, chlorophyl, beta-carotene, lipids, enzymes) (EPO)
 [List of Pre Grant Publications for class 257 subclass E51.046][List of Patents for class 257 subclass E51.046]E51.046 Subclass E51.046 indent level is 2 Silicon-containing organic semiconductor (EPO)
[List of Pre Grant Publications for class 257 subclass E51.047][List of Patents for class 257 subclass E51.047]E51.047 Subclass E51.047 indent level is 2 Macromolecular system with low molecular weight (e.g., cyanine dyes, coumarine dyes, tetrathiafulvalene) (EPO)
 [List of Pre Grant Publications for class 257 subclass E51.052][List of Patents for class 257 subclass E51.052]E51.052 Subclass E51.052 indent level is 2 Langmuir Blodgett film (EPO)
[List of Pre Grant Publications for class 257 subclass E43.001][List of Patents for class 257 subclass E43.001]E43.001 SEMICONDUCTOR OR SOLID-STATE DEVICES USING GALVANO-MAGNETIC OR SIMILAR MAGNETIC EFFECTS, PROCESSES OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO)
[List of Pre Grant Publications for class 257 subclass E33.001][List of Patents for class 257 subclass E33.001]E33.001 LIGHT EMITTING SEMICONDUCTOR DEVICES HAVING A POTENTIAL OR A SURFACE BARRIER, PROCESSES OR APPARATUS PECULIAR TO THE MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF
[List of Pre Grant Publications for class 257 subclass E33.002][List of Patents for class 257 subclass E33.002]E33.002 Subclass E33.002 indent level is 1 Device characterized by semiconductor body (EPO)
[List of Pre Grant Publications for class 257 subclass E33.003][List of Patents for class 257 subclass E33.003]E33.003 Subclass E33.003 indent level is 2 Particular crystalline orientation or structure (EPO)
[List of Pre Grant Publications for class 257 subclass E33.005][List of Patents for class 257 subclass E33.005]E33.005 Subclass E33.005 indent level is 2 Shape or structure (e.g., shape of epitaxial layer) (EPO)
[List of Pre Grant Publications for class 257 subclass E33.013][List of Patents for class 257 subclass E33.013]E33.013 Subclass E33.013 indent level is 2 Material of active region (EPO)
 [List of Pre Grant Publications for class 257 subclass E33.043][List of Patents for class 257 subclass E33.043]E33.043 Subclass E33.043 indent level is 2 Physical imperfections (e.g., particular concentration or distribution of impurity) (EPO)
[List of Pre Grant Publications for class 257 subclass E33.044][List of Patents for class 257 subclass E33.044]E33.044 Subclass E33.044 indent level is 1 Device characterized by their operation (EPO)
[List of Pre Grant Publications for class 257 subclass E33.055][List of Patents for class 257 subclass E33.055]E33.055 Subclass E33.055 indent level is 1 Detail of nonsemiconductor component other than light-emitting semiconductor device (EPO)
[List of Pre Grant Publications for class 257 subclass E31.001][List of Patents for class 257 subclass E31.001]E31.001 SEMICONDUCTOR DEVICES RESPONSIVE OR SENSITIVE TO ELECTROMAGNETIC RADIATION (E.G., INFRARED RADIATION, ADAPTED FOR CONVERSION OF RADIATION INTO ELECTRICAL ENERGY OR FOR CONTROL OF ELECTRICAL ENERGY BY SUCH RADIATION PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.002][List of Patents for class 257 subclass E31.002]E31.002 Subclass E31.002 indent level is 1 Characterized by semiconductor body (EPO)
[List of Pre Grant Publications for class 257 subclass E31.003][List of Patents for class 257 subclass E31.003]E31.003 Subclass E31.003 indent level is 2 Characterized by semiconductor body material (EPO)
[List of Pre Grant Publications for class 257 subclass E31.004][List of Patents for class 257 subclass E31.004]E31.004 Subclass E31.004 indent level is 3 Inorganic materials (EPO)
[List of Pre Grant Publications for class 257 subclass E31.005][List of Patents for class 257 subclass E31.005]E31.005 Subclass E31.005 indent level is 4 In different semiconductor regions (e.g., Cu 2 X/CdX heterojunction and X being Group VI element) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.008][List of Patents for class 257 subclass E31.008]E31.008 Subclass E31.008 indent level is 4 Selenium or tellurium (EPO)
[List of Pre Grant Publications for class 257 subclass E31.011][List of Patents for class 257 subclass E31.011]E31.011 Subclass E31.011 indent level is 4 Including, apart from doping material or other impurity, only Group IV element (EPO)
[List of Pre Grant Publications for class 257 subclass E31.015][List of Patents for class 257 subclass E31.015]E31.015 Subclass E31.015 indent level is 4 Including, apart from doping material or other impurity, only Group II-VI compound (e.g., CdS, ZnS, HgCdTe) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.019][List of Patents for class 257 subclass E31.019]E31.019 Subclass E31.019 indent level is 4 Including, apart from doping material or other impurity, only Group III-V compound (EPO)
[List of Pre Grant Publications for class 257 subclass E31.023][List of Patents for class 257 subclass E31.023]E31.023 Subclass E31.023 indent level is 4 Including, apart from doping material or other impurity, only Group IV compound (e.g., SiC) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.026][List of Patents for class 257 subclass E31.026]E31.026 Subclass E31.026 indent level is 4 Including, apart from doping material or other impurity, only compound other than Group II-VI, III-V, and IV compound (EPO)
[List of Pre Grant Publications for class 257 subclass E31.032][List of Patents for class 257 subclass E31.032]E31.032 Subclass E31.032 indent level is 2 Characterized by semiconductor body shape, relative size, or disposition of semiconductor regions (EPO)
[List of Pre Grant Publications for class 257 subclass E31.04][List of Patents for class 257 subclass E31.04]E31.04 Subclass E31.04 indent level is 2 Characterized by semiconductor body crystalline structure or plane (EPO)
[List of Pre Grant Publications for class 257 subclass E31.052][List of Patents for class 257 subclass E31.052]E31.052 Subclass E31.052 indent level is 1 Adapted to control current flow through device (e.g., photoresistor) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.053][List of Patents for class 257 subclass E31.053]E31.053 Subclass E31.053 indent level is 2 For device having potential or surface barrier (e.g., phototransistor) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.054][List of Patents for class 257 subclass E31.054]E31.054 Subclass E31.054 indent level is 3 Device sensitive to infrared, visible, or ultraviolet radiation (EPO)
[List of Pre Grant Publications for class 257 subclass E31.055][List of Patents for class 257 subclass E31.055]E31.055 Subclass E31.055 indent level is 4 Characterized by only one potential or surface barrier (EPO)
[List of Pre Grant Publications for class 257 subclass E31.068][List of Patents for class 257 subclass E31.068]E31.068 Subclass E31.068 indent level is 4 Characterized by two potential or surface barriers (EPO)
[List of Pre Grant Publications for class 257 subclass E31.07][List of Patents for class 257 subclass E31.07]E31.07 Subclass E31.07 indent level is 4 Characterized by at least three potential barriers (EPO)
[List of Pre Grant Publications for class 257 subclass E31.073][List of Patents for class 257 subclass E31.073]E31.073 Subclass E31.073 indent level is 4 Field-effect type (e.g., junction field-effect phototransistor) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.086][List of Patents for class 257 subclass E31.086]E31.086 Subclass E31.086 indent level is 3 Device sensitive to very short wavelength (e.g., X-ray, gamma-ray, or corpuscular radiation) (EPO)
 [List of Pre Grant Publications for class 257 subclass E31.092][List of Patents for class 257 subclass E31.092]E31.092 Subclass E31.092 indent level is 2 Device being sensitive to very short wavelength (e.g., X-ray, gamma-ray) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.093][List of Patents for class 257 subclass E31.093]E31.093 Subclass E31.093 indent level is 2 Device sensitive to infrared, visible, or ultraviolet radiation (EPO)
[List of Pre Grant Publications for class 257 subclass E31.095][List of Patents for class 257 subclass E31.095]E31.095 Subclass E31.095 indent level is 1 Structurally associated with electric light source (e.g., electroluminescent light source) (EPO)
[List of Pre Grant Publications for class 257 subclass E31.11][List of Patents for class 257 subclass E31.11]E31.11 Subclass E31.11 indent level is 1 Detail of nonsemiconductor component of radiation-sensitive semiconductor device (EPO)
[List of Pre Grant Publications for class 257 subclass E27.001][List of Patents for class 257 subclass E27.001]E27.001 DEVICE CONSISTING OF A PLURALITY OF SEMICONDUCTOR OR OTHER SOLID STATE COMPONENTS FORMED IN OR ON A COMMON SUBSTRATE, E.G., INTEGRATED CIRCUIT DEVICE (EPO)
[List of Pre Grant Publications for class 257 subclass E27.002][List of Patents for class 257 subclass E27.002]E27.002 Subclass E27.002 indent level is 1 Including bulk negative resistance effect component (EPO)
 [List of Pre Grant Publications for class 257 subclass E27.004][List of Patents for class 257 subclass E27.004]E27.004 Subclass E27.004 indent level is 1 Including solid state component for rectifying, amplifying, or switching without a potential barrier or surface barrier (EPO)
 [List of Pre Grant Publications for class 257 subclass E27.005][List of Patents for class 257 subclass E27.005]E27.005 Subclass E27.005 indent level is 1 Including component using galvano-magnetic effects, e.g. Hall effect (EPO)
 [List of Pre Grant Publications for class 257 subclass E27.006][List of Patents for class 257 subclass E27.006]E27.006 Subclass E27.006 indent level is 1 Including piezo-electric, electro-resistive, or magneto-resistive component (EPO)
 [List of Pre Grant Publications for class 257 subclass E27.007][List of Patents for class 257 subclass E27.007]E27.007 Subclass E27.007 indent level is 1 Including superconducting component (EPO)
 [List of Pre Grant Publications for class 257 subclass E27.008][List of Patents for class 257 subclass E27.008]E27.008 Subclass E27.008 indent level is 1 Including thermo-electric or thermo-magnetic component with or without a junction of dissimilar material or thermo-magnetic component (EPO)
[List of Pre Grant Publications for class 257 subclass E27.009][List of Patents for class 257 subclass E27.009]E27.009 Subclass E27.009 indent level is 1 Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or Including integrated passive circuit elements (EPO)
[List of Pre Grant Publications for class 257 subclass E27.01][List of Patents for class 257 subclass E27.01]E27.01 Subclass E27.01 indent level is 2 With semiconductor substrate only (EPO)
[List of Pre Grant Publications for class 257 subclass E27.011][List of Patents for class 257 subclass E27.011]E27.011 Subclass E27.011 indent level is 3 Including a plurality of components in a non-repetitive configuration (EPO)
 [List of Pre Grant Publications for class 257 subclass E27.012][List of Patents for class 257 subclass E27.012]E27.012 Subclass E27.012 indent level is 4 Made of compound semiconductor material, e.g. III-V material (EPO)
[List of Pre Grant Publications for class 257 subclass E27.013][List of Patents for class 257 subclass E27.013]E27.013 Subclass E27.013 indent level is 4 Integrated circuit having a two-dimensional layout of components without a common active region (EPO)
[List of Pre Grant Publications for class 257 subclass E27.026][List of Patents for class 257 subclass E27.026]E27.026 Subclass E27.026 indent level is 4 Integrated circuit having a three-dimensional layout (EPO)
[List of Pre Grant Publications for class 257 subclass E27.028][List of Patents for class 257 subclass E27.028]E27.028 Subclass E27.028 indent level is 4 Including component having an active region in common (EPO)
[List of Pre Grant Publications for class 257 subclass E27.046][List of Patents for class 257 subclass E27.046]E27.046 Subclass E27.046 indent level is 3 Including only semiconductor components of a single kind, e.g., all bipolar transistors, all diodes, or all CMOS (EPO)
[List of Pre Grant Publications for class 257 subclass E27.07][List of Patents for class 257 subclass E27.07]E27.07 Subclass E27.07 indent level is 3 Including a plurality of individual components in a repetitive configuration (EPO)
 [List of Pre Grant Publications for class 257 subclass E27.071][List of Patents for class 257 subclass E27.071]E27.071 Subclass E27.071 indent level is 4 Including resistor or capacitor only (EPO)
[List of Pre Grant Publications for class 257 subclass E27.072][List of Patents for class 257 subclass E27.072]E27.072 Subclass E27.072 indent level is 4 Including bipolar component (EPO)
[List of Pre Grant Publications for class 257 subclass E27.081][List of Patents for class 257 subclass E27.081]E27.081 Subclass E27.081 indent level is 4 Including field-effect component (EPO)
[List of Pre Grant Publications for class 257 subclass E27.105][List of Patents for class 257 subclass E27.105]E27.105 Subclass E27.105 indent level is 4 Masterslice integrated circuit (EPO)
[List of Pre Grant Publications for class 257 subclass E27.111][List of Patents for class 257 subclass E27.111]E27.111 Subclass E27.111 indent level is 2 Substrate comprising other than a semiconductor material, e.g. insulating substrate or layered substrate Including a non-semiconductor layer (EPO)
[List of Pre Grant Publications for class 257 subclass E27.114][List of Patents for class 257 subclass E27.114]E27.114 Subclass E27.114 indent level is 1 Including only passive thin-film or thick-film elements on a common insulating substrate (EPO)
[List of Pre Grant Publications for class 257 subclass E27.117][List of Patents for class 257 subclass E27.117]E27.117 Subclass E27.117 indent level is 1 Including organic material in active region
[List of Pre Grant Publications for class 257 subclass E27.12][List of Patents for class 257 subclass E27.12]E27.12 Subclass E27.12 indent level is 1 Including semiconductor component with at least one potential barrier or surface barrier adapted for light emission structurally associated with controlling devices having a variable impedance and not being light sensitive (EPO)
[List of Pre Grant Publications for class 257 subclass E27.122][List of Patents for class 257 subclass E27.122]E27.122 Subclass E27.122 indent level is 1 Including active semiconductor component sensitive to infrared radiation, light, or electromagnetic radiation of a shorter wavelength (EPO)
[List of Pre Grant Publications for class 257 subclass E27.123][List of Patents for class 257 subclass E27.123]E27.123 Subclass E27.123 indent level is 2 Energy conversion device (EPO)
[List of Pre Grant Publications for class 257 subclass E27.127][List of Patents for class 257 subclass E27.127]E27.127 Subclass E27.127 indent level is 2 Device controlled by radiation (EPO)
[List of Pre Grant Publications for class 257 subclass E27.128][List of Patents for class 257 subclass E27.128]E27.128 Subclass E27.128 indent level is 3 With at least one potential barrier or surface barrier (EPO)
[List of Pre Grant Publications for class 257 subclass E27.13][List of Patents for class 257 subclass E27.13]E27.13 Subclass E27.13 indent level is 3 Imager Including structural or functional details of the device (EPO)
 [List of Pre Grant Publications for class 257 subclass E27.131][List of Patents for class 257 subclass E27.131]E27.131 Subclass E27.131 indent level is 4 Geometry or disposition of pixel-elements, address-lines, or gate-electrodes (EPO)
 [List of Pre Grant Publications for class 257 subclass E27.132][List of Patents for class 257 subclass E27.132]E27.132 Subclass E27.132 indent level is 4 Pixel-elements with integrated switching, control, storage, or amplification elements (EPO)
[List of Pre Grant Publications for class 257 subclass E27.133][List of Patents for class 257 subclass E27.133]E27.133 Subclass E27.133 indent level is 4 Photodiode array or MOS imager (EPO)
[List of Pre Grant Publications for class 257 subclass E27.141][List of Patents for class 257 subclass E27.141]E27.141 Subclass E27.141 indent level is 4 Imager using a photoconductor layer (e.g., single photoconductor layer for all pixels) (EPO)
 [List of Pre Grant Publications for class 257 subclass E27.147][List of Patents for class 257 subclass E27.147]E27.147 Subclass E27.147 indent level is 4 Contact-type imager (e.g., contacts document surface) (EPO)
 [List of Pre Grant Publications for class 257 subclass E27.148][List of Patents for class 257 subclass E27.148]E27.148 Subclass E27.148 indent level is 4 Junction field effect transistor (JFET) imager or static induction transistor (SIT) imager (EPO)
 [List of Pre Grant Publications for class 257 subclass E27.149][List of Patents for class 257 subclass E27.149]E27.149 Subclass E27.149 indent level is 4 Bipolar transistor imager (EPO)
[List of Pre Grant Publications for class 257 subclass E27.15][List of Patents for class 257 subclass E27.15]E27.15 Subclass E27.15 indent level is 4 Charge coupled imager (EPO)
[List of Pre Grant Publications for class 257 subclass E29.001][List of Patents for class 257 subclass E29.001]E29.001 SEMICONDUCTORS DEVICES ADAPTED FOR RECTIFYING, AMPLIFYING, OSCILLATING, OR SWITCHING, CAPACITORS, OR RESISTORS WITH AT LEAST ONE POTENTIAL-JUMP BARRIER OR SURFACE BARRIER (EPO)
[List of Pre Grant Publications for class 257 subclass E29.002][List of Patents for class 257 subclass E29.002]E29.002 Subclass E29.002 indent level is 1 Electrical characteristics due to properties of entire semiconductor body rather than just surface region (EPO)
[List of Pre Grant Publications for class 257 subclass E29.003][List of Patents for class 257 subclass E29.003]E29.003 Subclass E29.003 indent level is 2 Characterized by their crystalline structure (e.g., polycrystalline, cubic) particular orientation of crystalline planes (EPO)
[List of Pre Grant Publications for class 257 subclass E29.005][List of Patents for class 257 subclass E29.005]E29.005 Subclass E29.005 indent level is 2 Characterized by specified shape or size of PN junction or by specified impurity concentration gradient within the device (EPO)
[List of Pre Grant Publications for class 257 subclass E29.006][List of Patents for class 257 subclass E29.006]E29.006 Subclass E29.006 indent level is 3 Characterized by particular design considerations to control electrical field effect within device (EPO)
[List of Pre Grant Publications for class 257 subclass E29.022][List of Patents for class 257 subclass E29.022]E29.022 Subclass E29.022 indent level is 3 Characterized by shape of semiconductor body (EPO)
[List of Pre Grant Publications for class 257 subclass E29.024][List of Patents for class 257 subclass E29.024]E29.024 Subclass E29.024 indent level is 3 Characterized by shape, relative sizes or dispositions of semiconductor regions or junctions between regions (EPO)
[List of Pre Grant Publications for class 257 subclass E29.029][List of Patents for class 257 subclass E29.029]E29.029 Subclass E29.029 indent level is 3 With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (EPO)
[List of Pre Grant Publications for class 257 subclass E29.043][List of Patents for class 257 subclass E29.043]E29.043 Subclass E29.043 indent level is 3 With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (EPO)
[List of Pre Grant Publications for class 257 subclass E29.068][List of Patents for class 257 subclass E29.068]E29.068 Subclass E29.068 indent level is 2 Characterized by materials of semiconductor body (EPO)
[List of Pre Grant Publications for class 257 subclass E29.069][List of Patents for class 257 subclass E29.069]E29.069 Subclass E29.069 indent level is 3 Single quantum well structures (EPO)
[List of Pre Grant Publications for class 257 subclass E29.072][List of Patents for class 257 subclass E29.072]E29.072 Subclass E29.072 indent level is 3 Structures with periodic or quasi-periodic potential variation, (e.g., multiple quantum wells, superlattices) (EPO)
[List of Pre Grant Publications for class 257 subclass E29.079][List of Patents for class 257 subclass E29.079]E29.079 Subclass E29.079 indent level is 3 Two or more elements from two or more groups of Periodic Table of elements (e.g., alloys) (EPO)
[List of Pre Grant Publications for class 257 subclass E29.082][List of Patents for class 257 subclass E29.082]E29.082 Subclass E29.082 indent level is 3 Only element from fourth group of Periodic System in uncombined form (EPO)
[List of Pre Grant Publications for class 257 subclass E29.087][List of Patents for class 257 subclass E29.087]E29.087 Subclass E29.087 indent level is 3 Selenium or tellurium only (EPO)
[List of Pre Grant Publications for class 257 subclass E29.089][List of Patents for class 257 subclass E29.089]E29.089 Subclass E29.089 indent level is 3 Only Group III-V compounds (EPO)
[List of Pre Grant Publications for class 257 subclass E29.094][List of Patents for class 257 subclass E29.094]E29.094 Subclass E29.094 indent level is 3 Only Group II-VI compounds (EPO)
[List of Pre Grant Publications for class 257 subclass E29.1][List of Patents for class 257 subclass E29.1]E29.1 Subclass E29.1 indent level is 3 Semiconductor materials other than Group IV, selenium, tellurium, or Group III-V compounds (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.105][List of Patents for class 257 subclass E29.105]E29.105 Subclass E29.105 indent level is 2 Characterized by combinations of two or more features of crystalline structure, shape, materials, physical imperfections, and concentration/distribution of impurities in bulk material (EPO)
[List of Pre Grant Publications for class 257 subclass E29.106][List of Patents for class 257 subclass E29.106]E29.106 Subclass E29.106 indent level is 2 Characterized by physical imperfections; having polished or roughened surface (EPO)
[List of Pre Grant Publications for class 257 subclass E29.109][List of Patents for class 257 subclass E29.109]E29.109 Subclass E29.109 indent level is 2 Characterized by concentration or distribution of impurities in bulk material (EPO)
[List of Pre Grant Publications for class 257 subclass E29.111][List of Patents for class 257 subclass E29.111]E29.111 Subclass E29.111 indent level is 1 Electrodes (EPO)
[List of Pre Grant Publications for class 257 subclass E29.112][List of Patents for class 257 subclass E29.112]E29.112 Subclass E29.112 indent level is 2 Characterized by their shape, relative sizes or dispositions (EPO)
[List of Pre Grant Publications for class 257 subclass E29.113][List of Patents for class 257 subclass E29.113]E29.113 Subclass E29.113 indent level is 3 Carrying current to be rectified, amplified or switched (EPO)
[List of Pre Grant Publications for class 257 subclass E29.123][List of Patents for class 257 subclass E29.123]E29.123 Subclass E29.123 indent level is 3 Not carrying current to be rectified, amplified, or switched (EPO)
[List of Pre Grant Publications for class 257 subclass E29.139][List of Patents for class 257 subclass E29.139]E29.139 Subclass E29.139 indent level is 2 Of specified material (EPO)
[List of Pre Grant Publications for class 257 subclass E29.166][List of Patents for class 257 subclass E29.166]E29.166 Subclass E29.166 indent level is 1 Types of semiconductor device (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.167][List of Patents for class 257 subclass E29.167]E29.167 Subclass E29.167 indent level is 2 Controllable by plural effects that include variations in magnetic field, mechanical force, or electric current/potential applied to device or one or more electrodes of device (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.168][List of Patents for class 257 subclass E29.168]E29.168 Subclass E29.168 indent level is 2 Quantum effect device (EPO)
[List of Pre Grant Publications for class 257 subclass E29.169][List of Patents for class 257 subclass E29.169]E29.169 Subclass E29.169 indent level is 2 Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.17][List of Patents for class 257 subclass E29.17]E29.17 Subclass E29.17 indent level is 3 Memory effect devices (EPO)
[List of Pre Grant Publications for class 257 subclass E29.171][List of Patents for class 257 subclass E29.171]E29.171 Subclass E29.171 indent level is 3 Bipolar device (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.172][List of Patents for class 257 subclass E29.172]E29.172 Subclass E29.172 indent level is 4 Double-base diode (EPO)
[List of Pre Grant Publications for class 257 subclass E29.173][List of Patents for class 257 subclass E29.173]E29.173 Subclass E29.173 indent level is 4 Transistor-type device (i.e., able to continuously respond to applied control signal)
[List of Pre Grant Publications for class 257 subclass E29.174][List of Patents for class 257 subclass E29.174]E29.174 Subclass E29.174 indent level is 5 Bipolar junction transistor
[List of Pre Grant Publications for class 257 subclass E29.194][List of Patents for class 257 subclass E29.194]E29.194 Subclass E29.194 indent level is 5 Controlled by field effect (e.g., bipolar static induction transistor (BSIT)) (EPO)
[List of Pre Grant Publications for class 257 subclass E29.211][List of Patents for class 257 subclass E29.211]E29.211 Subclass E29.211 indent level is 4 Thyristor-type device (e.g., having four-zone regenerative action) (EPO)
[List of Pre Grant Publications for class 257 subclass E29.226][List of Patents for class 257 subclass E29.226]E29.226 Subclass E29.226 indent level is 3 Unipolar device (EPO)
[List of Pre Grant Publications for class 257 subclass E29.227][List of Patents for class 257 subclass E29.227]E29.227 Subclass E29.227 indent level is 4 Charge transfer device (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.241][List of Patents for class 257 subclass E29.241]E29.241 Subclass E29.241 indent level is 4 Hot electron transistor (HET) or metal base transistor (MBT) (EPO)
[List of Pre Grant Publications for class 257 subclass E29.242][List of Patents for class 257 subclass E29.242]E29.242 Subclass E29.242 indent level is 4 Field-effect transistor (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.243][List of Patents for class 257 subclass E29.243]E29.243 Subclass E29.243 indent level is 5 Using static field induced region (e.g., SIT, PBT) (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.244][List of Patents for class 257 subclass E29.244]E29.244 Subclass E29.244 indent level is 5 Velocity modulations transistor (i.e., VMT) (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.245][List of Patents for class 257 subclass E29.245]E29.245 Subclass E29.245 indent level is 5 With one-dimensional charge carrier gas channel (e.g., quantum wire FET) (EPO)
[List of Pre Grant Publications for class 257 subclass E29.246][List of Patents for class 257 subclass E29.246]E29.246 Subclass E29.246 indent level is 5 With two-dimensional charge carrier gas channel (e.g., HEMT; with two-dimensional charge-carrier layer formed at heterojunction interface) (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.254][List of Patents for class 257 subclass E29.254]E29.254 Subclass E29.254 indent level is 5 With delta-doped channel (EPO)
[List of Pre Grant Publications for class 257 subclass E29.255][List of Patents for class 257 subclass E29.255]E29.255 Subclass E29.255 indent level is 5 With field effect produced by insulated gate (EPO)
[List of Pre Grant Publications for class 257 subclass E29.256][List of Patents for class 257 subclass E29.256]E29.256 Subclass E29.256 indent level is 6 With channel containing layer contacting drain drift region (e.g., DMOS transistor) (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.262][List of Patents for class 257 subclass E29.262]E29.262 Subclass E29.262 indent level is 6 Vertical transistor (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.263][List of Patents for class 257 subclass E29.263]E29.263 Subclass E29.263 indent level is 6 Comprising gate-to-body connection (i.e., bulk dynamic threshold voltage MOSFET) (EPO)
[List of Pre Grant Publications for class 257 subclass E29.264][List of Patents for class 257 subclass E29.264]E29.264 Subclass E29.264 indent level is 6 With multiple gate structure (EPO)
[List of Pre Grant Publications for class 257 subclass E29.266][List of Patents for class 257 subclass E29.266]E29.266 Subclass E29.266 indent level is 6 With lightly doped drain or source extension (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.27][List of Patents for class 257 subclass E29.27]E29.27 Subclass E29.27 indent level is 6 With buried channel (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.271][List of Patents for class 257 subclass E29.271]E29.271 Subclass E29.271 indent level is 6 With Schottky drain or source contact (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.272][List of Patents for class 257 subclass E29.272]E29.272 Subclass E29.272 indent level is 6 Gate comprising ferroelectric layer (EPO)
[List of Pre Grant Publications for class 257 subclass E29.273][List of Patents for class 257 subclass E29.273]E29.273 Subclass E29.273 indent level is 6 Thin-film transistor (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.274][List of Patents for class 257 subclass E29.274]E29.274 Subclass E29.274 indent level is 7 Vertical transistor (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.275][List of Patents for class 257 subclass E29.275]E29.275 Subclass E29.275 indent level is 7 With multiple gates (EPO)
[List of Pre Grant Publications for class 257 subclass E29.276][List of Patents for class 257 subclass E29.276]E29.276 Subclass E29.276 indent level is 7 With supplementary region or layer in thin film or in insulated bulk substrate supporting it for controlling or increasing voltage resistance of device (EPO)
[List of Pre Grant Publications for class 257 subclass E29.285][List of Patents for class 257 subclass E29.285]E29.285 Subclass E29.285 indent level is 7 Silicon transistor (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.295][List of Patents for class 257 subclass E29.295]E29.295 Subclass E29.295 indent level is 7 Characterized by insulating substrate or support (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.296][List of Patents for class 257 subclass E29.296]E29.296 Subclass E29.296 indent level is 7 Comprising Group III-V or II-VI compound, or of Se, Te, or oxide semiconductor (EPO)
[List of Pre Grant Publications for class 257 subclass E29.297][List of Patents for class 257 subclass E29.297]E29.297 Subclass E29.297 indent level is 7 Comprising Group IV non-Si semiconductor materials or alloys (e.g., Ge, SiN alloy, SiC alloy) (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.299][List of Patents for class 257 subclass E29.299]E29.299 Subclass E29.299 indent level is 7 Characterized by property or structure of channel or contact thereto (EPO)
[List of Pre Grant Publications for class 257 subclass E29.3][List of Patents for class 257 subclass E29.3]E29.3 Subclass E29.3 indent level is 6 With floating gate (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.309][List of Patents for class 257 subclass E29.309]E29.309 Subclass E29.309 indent level is 6 With charge trapping gate insulator (e.g., MNOS-memory transistors) (EPO)
[List of Pre Grant Publications for class 257 subclass E29.31][List of Patents for class 257 subclass E29.31]E29.31 Subclass E29.31 indent level is 5 With field effect produced by PN or other rectifying junction gate (i.e., potential barrier) (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.322][List of Patents for class 257 subclass E29.322]E29.322 Subclass E29.322 indent level is 4 Single electron transistors: Coulomb blockade device (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.323][List of Patents for class 257 subclass E29.323]E29.323 Subclass E29.323 indent level is 2 Controllable by variation of magnetic field applied to device (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.324][List of Patents for class 257 subclass E29.324]E29.324 Subclass E29.324 indent level is 2 Controllable by variation of applied mechanical force (e.g., of pressure) (EPO)
[List of Pre Grant Publications for class 257 subclass E29.325][List of Patents for class 257 subclass E29.325]E29.325 Subclass E29.325 indent level is 2 Controllable only by variation of electric current supplied or only electric potential applied to electrode carrying current to be rectified, amplified, oscillated, or switched (EPO)
 [List of Pre Grant Publications for class 257 subclass E29.347][List of Patents for class 257 subclass E29.347]E29.347 Subclass E29.347 indent level is 2 Controllable by thermal signal (e.g., IR) (EPO)
[List of Pre Grant Publications for class 257 subclass E45.001][List of Patents for class 257 subclass E45.001]E45.001 SOLID-STATE DEVICES ADAPTED FOR RECTIFYING, AMPLIFYING, OSCILLATING, OR SWITCHING WITHOUT POTENTIAL-JUMP BARRIER OR SURFACE BARRIER, E.G., DIELECTRIC TRIODES; OVSHINSKY-EFFECT DEVICES, PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT THEREOF, OR OF PARTS THEREOF (EPO)
[List of Pre Grant Publications for class 257 subclass E25.001][List of Patents for class 257 subclass E25.001]E25.001 ASSEMBLIES CONSISTING OF PLURALITY OF INDIVIDUAL SEMICONDUCTOR OR OTHER SOLID-STATE DEVICES (EPO)
[List of Pre Grant Publications for class 257 subclass E25.002][List of Patents for class 257 subclass E25.002]E25.002 Subclass E25.002 indent level is 1 All devices being of same type, e.g., assemblies of rectifier diodes (EPO)
[List of Pre Grant Publications for class 257 subclass E25.003][List of Patents for class 257 subclass E25.003]E25.003 Subclass E25.003 indent level is 2 Devices not having separate containers (EPO)
[List of Pre Grant Publications for class 257 subclass E25.004][List of Patents for class 257 subclass E25.004]E25.004 Subclass E25.004 indent level is 3 Devices responsive or sensitive to electromagnetic radiation, e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation (EPO)
[List of Pre Grant Publications for class 257 subclass E25.008][List of Patents for class 257 subclass E25.008]E25.008 Subclass E25.008 indent level is 3 Organic solid-state devices (EPO)
[List of Pre Grant Publications for class 257 subclass E25.01][List of Patents for class 257 subclass E25.01]E25.01 Subclass E25.01 indent level is 3 Device consisting of plurality of semiconductor or other solid state devices or components formed in or on common substrate, e.g., integrated circuit device (EPO)
[List of Pre Grant Publications for class 257 subclass E25.014][List of Patents for class 257 subclass E25.014]E25.014 Subclass E25.014 indent level is 3 Semiconductor devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (EPO)
[List of Pre Grant Publications for class 257 subclass E25.019][List of Patents for class 257 subclass E25.019]E25.019 Subclass E25.019 indent level is 3 Incoherent light-emitting semiconductor devices having potential or surface barrier (EPO)
[List of Pre Grant Publications for class 257 subclass E25.022][List of Patents for class 257 subclass E25.022]E25.022 Subclass E25.022 indent level is 2 Devices having separate containers (EPO)
[List of Pre Grant Publications for class 257 subclass E25.029][List of Patents for class 257 subclass E25.029]E25.029 Subclass E25.029 indent level is 1 Devices being of two or more types, e.g., forming hybrid circuits (EPO)
[List of Pre Grant Publications for class 257 subclass E23.001][List of Patents for class 257 subclass E23.001]E23.001 PACKAGING, INTERCONNECTS, AND MARKINGS FOR SEMICONDUCTOR OR OTHER SOLID-STATE DEVICES (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.002][List of Patents for class 257 subclass E23.002]E23.002 Subclass E23.002 indent level is 1 Details not otherwise provided for, e.g., protection against moisture (EPO)
[List of Pre Grant Publications for class 257 subclass E23.003][List of Patents for class 257 subclass E23.003]E23.003 Subclass E23.003 indent level is 1 Mountings, e.g., nondetachable insulating substrates (EPO)
[List of Pre Grant Publications for class 257 subclass E23.01][List of Patents for class 257 subclass E23.01]E23.01 Subclass E23.01 indent level is 1 Arrangements for conducting electric current to or from solid-state body in operation, e.g., leads, terminal arrangements (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.011][List of Patents for class 257 subclass E23.011]E23.011 Subclass E23.011 indent level is 2 Internal lead connections, e.g., via connections, feedthrough structures (EPO)
[List of Pre Grant Publications for class 257 subclass E23.012][List of Patents for class 257 subclass E23.012]E23.012 Subclass E23.012 indent level is 2 Consisting of lead-in layers inseparably applied to semiconductor body (EPO)
[List of Pre Grant Publications for class 257 subclass E23.023][List of Patents for class 257 subclass E23.023]E23.023 Subclass E23.023 indent level is 2 Consisting of soldered or bonded constructions (EPO)
[List of Pre Grant Publications for class 257 subclass E23.024][List of Patents for class 257 subclass E23.024]E23.024 Subclass E23.024 indent level is 3 Wire-like arrangements or pins or rods (EPO)
[List of Pre Grant Publications for class 257 subclass E23.026][List of Patents for class 257 subclass E23.026]E23.026 Subclass E23.026 indent level is 3 Bases or plates or solder therefor (EPO)
[List of Pre Grant Publications for class 257 subclass E23.031][List of Patents for class 257 subclass E23.031]E23.031 Subclass E23.031 indent level is 3 Lead frames or other flat leads (EPO)
[List of Pre Grant Publications for class 257 subclass E23.032][List of Patents for class 257 subclass E23.032]E23.032 Subclass E23.032 indent level is 4 Additional leads (EPO)
[List of Pre Grant Publications for class 257 subclass E23.037][List of Patents for class 257 subclass E23.037]E23.037 Subclass E23.037 indent level is 4 Characterized by die pad (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.041][List of Patents for class 257 subclass E23.041]E23.041 Subclass E23.041 indent level is 4 Multilayer (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.042][List of Patents for class 257 subclass E23.042]E23.042 Subclass E23.042 indent level is 4 Plurality of lead frames mounted in one device (EPO)
[List of Pre Grant Publications for class 257 subclass E23.043][List of Patents for class 257 subclass E23.043]E23.043 Subclass E23.043 indent level is 4 Geometry of lead frame (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.051][List of Patents for class 257 subclass E23.051]E23.051 Subclass E23.051 indent level is 4 Specifically adapted to facilitate heat dissipation (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.052][List of Patents for class 257 subclass E23.052]E23.052 Subclass E23.052 indent level is 4 Assembly of semiconductor devices on lead frame (EPO)
[List of Pre Grant Publications for class 257 subclass E23.053][List of Patents for class 257 subclass E23.053]E23.053 Subclass E23.053 indent level is 4 Characterized by materials of lead frames or layers thereon (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.055][List of Patents for class 257 subclass E23.055]E23.055 Subclass E23.055 indent level is 4 Consisting of thin flexible metallic tape with or without film carrier (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.056][List of Patents for class 257 subclass E23.056]E23.056 Subclass E23.056 indent level is 4 Insulating layers on lead frames (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.057][List of Patents for class 257 subclass E23.057]E23.057 Subclass E23.057 indent level is 4 Capacitor integral with or on lead frame (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.058][List of Patents for class 257 subclass E23.058]E23.058 Subclass E23.058 indent level is 4 Battery in combination with lead frame (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.059][List of Patents for class 257 subclass E23.059]E23.059 Subclass E23.059 indent level is 4 Oscillators in combination with lead frame (EPO)
[List of Pre Grant Publications for class 257 subclass E23.06][List of Patents for class 257 subclass E23.06]E23.06 Subclass E23.06 indent level is 3 Leads, i.e., metallizations or lead frames on insulating substrates, e.g., chip carriers (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.078][List of Patents for class 257 subclass E23.078]E23.078 Subclass E23.078 indent level is 2 Flexible arrangements, e.g., pressure contacts without soldering (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.079][List of Patents for class 257 subclass E23.079]E23.079 Subclass E23.079 indent level is 2 For integrated circuit devices, e.g., power bus, number of leads (EPO)
[List of Pre Grant Publications for class 257 subclass E23.08][List of Patents for class 257 subclass E23.08]E23.08 Subclass E23.08 indent level is 1 Arrangements for cooling, heating, ventilating or temperature compensation; temperature-sensing arrangements (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.081][List of Patents for class 257 subclass E23.081]E23.081 Subclass E23.081 indent level is 2 Arrangements for heating (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.082][List of Patents for class 257 subclass E23.082]E23.082 Subclass E23.082 indent level is 2 Cooling arrangements using Peltier effect (EPO)
[List of Pre Grant Publications for class 257 subclass E23.083][List of Patents for class 257 subclass E23.083]E23.083 Subclass E23.083 indent level is 2 Mountings or securing means for detachable cooling or heating arrangements; fixed by friction, plugs or springs (EPO)
[List of Pre Grant Publications for class 257 subclass E23.087][List of Patents for class 257 subclass E23.087]E23.087 Subclass E23.087 indent level is 2 Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling (EPO)
[List of Pre Grant Publications for class 257 subclass E23.095][List of Patents for class 257 subclass E23.095]E23.095 Subclass E23.095 indent level is 2 Complete device being wholly immersed in fluid other than air (EPO)
[List of Pre Grant Publications for class 257 subclass E23.097][List of Patents for class 257 subclass E23.097]E23.097 Subclass E23.097 indent level is 2 Involving transfer of heat by flowing fluids (EPO)
[List of Pre Grant Publications for class 257 subclass E23.101][List of Patents for class 257 subclass E23.101]E23.101 Subclass E23.101 indent level is 2 Selection of materials, or shaping, to facilitate cooling or heating, e.g., heat sinks (EPO)
[List of Pre Grant Publications for class 257 subclass E23.114][List of Patents for class 257 subclass E23.114]E23.114 Subclass E23.114 indent level is 1 Protection against radiation, e.g., light, electromagnetic waves (EPO)
[List of Pre Grant Publications for class 257 subclass E23.116][List of Patents for class 257 subclass E23.116]E23.116 Subclass E23.116 indent level is 1 Encapsulations, e.g., encapsulating layers, coatings, e.g., for protection (EPO)
[List of Pre Grant Publications for class 257 subclass E23.135][List of Patents for class 257 subclass E23.135]E23.135 Subclass E23.135 indent level is 1 Fillings or auxiliary members in containers or encapsulations, e.g., centering rings (EPO)
[List of Pre Grant Publications for class 257 subclass E23.141][List of Patents for class 257 subclass E23.141]E23.141 Subclass E23.141 indent level is 1 Arrangements for conducting electric current within device in operation from one component to another, interconnections, e.g., wires, lead frames (EPO)
[List of Pre Grant Publications for class 257 subclass E23.142][List of Patents for class 257 subclass E23.142]E23.142 Subclass E23.142 indent level is 2 Including external interconnections consisting of multilayer structure of conductive and insulating layers inseparably formed on semiconductor body (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.143][List of Patents for class 257 subclass E23.143]E23.143 Subclass E23.143 indent level is 3 Crossover interconnections (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.144][List of Patents for class 257 subclass E23.144]E23.144 Subclass E23.144 indent level is 3 Capacitive arrangements or effects of, or between wiring layers (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.145][List of Patents for class 257 subclass E23.145]E23.145 Subclass E23.145 indent level is 3 Via connections in multilevel interconnection structure (EPO)
[List of Pre Grant Publications for class 257 subclass E23.146][List of Patents for class 257 subclass E23.146]E23.146 Subclass E23.146 indent level is 3 With adaptable interconnections (EPO)
[List of Pre Grant Publications for class 257 subclass E23.151][List of Patents for class 257 subclass E23.151]E23.151 Subclass E23.151 indent level is 3 Geometry or layout of interconnection structure (EPO)
[List of Pre Grant Publications for class 257 subclass E23.154][List of Patents for class 257 subclass E23.154]E23.154 Subclass E23.154 indent level is 3 Characterized by materials (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.168][List of Patents for class 257 subclass E23.168]E23.168 Subclass E23.168 indent level is 2 Including internal interconnections, e.g., cross-under constructions (EPO)
[List of Pre Grant Publications for class 257 subclass E23.169][List of Patents for class 257 subclass E23.169]E23.169 Subclass E23.169 indent level is 2 Interconnection structure between plurality of semiconductor chips being formed on or in insulating substrates (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.179][List of Patents for class 257 subclass E23.179]E23.179 Subclass E23.179 indent level is 1 Marks applied to semiconductor devices or parts, e.g., registration marks, test patterns, alignment structures, wafer maps (EPO)
[List of Pre Grant Publications for class 257 subclass E23.18][List of Patents for class 257 subclass E23.18]E23.18 Subclass E23.18 indent level is 1 Containers; seals (EPO)
 [List of Pre Grant Publications for class 257 subclass E23.194][List of Patents for class 257 subclass E23.194]E23.194 Subclass E23.194 indent level is 1 Protection against mechanical damage (EPO)
[List of Pre Grant Publications for class 257 subclass E49.001][List of Patents for class 257 subclass E49.001]E49.001 SOLID-STATE DEVICES WITH AT LEAST ONE POTENTIAL-JUMP BARRIER OR SURFACE BARRIER USING ACTIVE LAYER OF LOWER ELECTRICAL CONDUCTIVITY THAN MATERIAL ADJACENT THERETO AND THROUGH WHICH CARRIER TUNNELING OCCURS, PROCESSES OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO)
[List of Pre Grant Publications for class 257 subclass E21.001][List of Patents for class 257 subclass E21.001]E21.001 PROCESSES OR APPARATUS ADAPTED FOR MANUFACTURE OR TREATMENT OF SEMICONDUCTOR OR SOLID-STATE DEVICES OR OF PARTS THEREOF (EPO)
[List of Pre Grant Publications for class 257 subclass E21.002][List of Patents for class 257 subclass E21.002]E21.002 Subclass E21.002 indent level is 1 Manufacture or treatment of semiconductor device (EPO)
[List of Pre Grant Publications for class 257 subclass E21.003][List of Patents for class 257 subclass E21.003]E21.003 Subclass E21.003 indent level is 2 Manufacture of two-terminal component for integrated circuit (EPO)
[List of Pre Grant Publications for class 257 subclass E21.023][List of Patents for class 257 subclass E21.023]E21.023 Subclass E21.023 indent level is 2 Making mask on semicond uctor body for further photolithographic processing (EPO)
[List of Pre Grant Publications for class 257 subclass E21.04][List of Patents for class 257 subclass E21.04]E21.04 Subclass E21.04 indent level is 2 Device having at least one potential-jump barrier or surface barrier, e.g., PN junction, depletion layer, carrier concentration layer (EPO)
[List of Pre Grant Publications for class 257 subclass E21.041][List of Patents for class 257 subclass E21.041]E21.041 Subclass E21.041 indent level is 3 Device having semiconductor body comprising carbon, e.g., diamond, diamond-like carbon (EPO)
[List of Pre Grant Publications for class 257 subclass E21.054][List of Patents for class 257 subclass E21.054]E21.054 Subclass E21.054 indent level is 3 Device having semiconductor body comprising silicon carbide (SiC) (EPO)
[List of Pre Grant Publications for class 257 subclass E21.068][List of Patents for class 257 subclass E21.068]E21.068 Subclass E21.068 indent level is 3 Device having semiconductor body comprising selenium (Se) or tellurium (Te) (EPO)
[List of Pre Grant Publications for class 257 subclass E21.078][List of Patents for class 257 subclass E21.078]E21.078 Subclass E21.078 indent level is 3 Device having semiconductor body comprising cuprous oxide (Cu 2 O) or cuprous iodide (CuI) (EPO)
[List of Pre Grant Publications for class 257 subclass E21.085][List of Patents for class 257 subclass E21.085]E21.085 Subclass E21.085 indent level is 3 Device having semiconductor body comprising Group IV elements or Group III-V compounds with or without impurities, e.g., doping materials (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.086][List of Patents for class 257 subclass E21.086]E21.086 Subclass E21.086 indent level is 4 Intermixing or interdiffusion or disordering of Group III-V heterostructures, e.g., IILD (EPO)
[List of Pre Grant Publications for class 257 subclass E21.087][List of Patents for class 257 subclass E21.087]E21.087 Subclass E21.087 indent level is 4 Joining of semiconductor body for junction formation (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.089][List of Patents for class 257 subclass E21.089]E21.089 Subclass E21.089 indent level is 4 Multistep processes for manufacture of device using quantum interference effect, e.g., electrostatic Aharonov-Bohm effect (EPO)
[List of Pre Grant Publications for class 257 subclass E21.09][List of Patents for class 257 subclass E21.09]E21.09 Subclass E21.09 indent level is 4 Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (EPO)
[List of Pre Grant Publications for class 257 subclass E21.091][List of Patents for class 257 subclass E21.091]E21.091 Subclass E21.091 indent level is 5 Using physical deposition, e.g., vacuum deposition, sputtering (EPO)
[List of Pre Grant Publications for class 257 subclass E21.101][List of Patents for class 257 subclass E21.101]E21.101 Subclass E21.101 indent level is 5 Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (EPO)
[List of Pre Grant Publications for class 257 subclass E21.114][List of Patents for class 257 subclass E21.114]E21.114 Subclass E21.114 indent level is 5 Using liquid deposition (EPO)
[List of Pre Grant Publications for class 257 subclass E21.119][List of Patents for class 257 subclass E21.119]E21.119 Subclass E21.119 indent level is 5 Characterized by the substrate (EPO)
[List of Pre Grant Publications for class 257 subclass E21.131][List of Patents for class 257 subclass E21.131]E21.131 Subclass E21.131 indent level is 5 Selective epilaxial growth, e.g., simultaneous deposition of mono- and non-mono semiconductor material (EPO)
[List of Pre Grant Publications for class 257 subclass E21.133][List of Patents for class 257 subclass E21.133]E21.133 Subclass E21.133 indent level is 5 Epitaxial re-growth of non-monocrystalline semiconductor material, e.g., lateral epitaxy by seeded solidific ation, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline material (EPO)
[List of Pre Grant Publications for class 257 subclass E21.135][List of Patents for class 257 subclass E21.135]E21.135 Subclass E21.135 indent level is 4 Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (EPO)
[List of Pre Grant Publications for class 257 subclass E21.154][List of Patents for class 257 subclass E21.154]E21.154 Subclass E21.154 indent level is 4 Alloying of impurity material, e.g., doping material, electrode material, with a semiconductor body (EPO)
[List of Pre Grant Publications for class 257 subclass E21.158][List of Patents for class 257 subclass E21.158]E21.158 Subclass E21.158 indent level is 4 Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (EPO)
[List of Pre Grant Publications for class 257 subclass E21.159][List of Patents for class 257 subclass E21.159]E21.159 Subclass E21.159 indent level is 5 Deposition of conductive or insulating material for electrode conducting electric current (EPO)
[List of Pre Grant Publications for class 257 subclass E21.176][List of Patents for class 257 subclass E21.176]E21.176 Subclass E21.176 indent level is 5 Manufacture or post-treatment of electrode having a capacitive structure, i.e., gate structure for field-effect device (EPO)
[List of Pre Grant Publications for class 257 subclass E21.19][List of Patents for class 257 subclass E21.19]E21.19 Subclass E21.19 indent level is 5 Making electrode structure comprising conductor-insulator-semiconductor, e.g., MIS gate (EPO)
[List of Pre Grant Publications for class 257 subclass E21.191][List of Patents for class 257 subclass E21.191]E21.191 Subclass E21.191 indent level is 6 Insulator formed on silicon semiconductor body (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.207][List of Patents for class 257 subclass E21.207]E21.207 Subclass E21.207 indent level is 6 Insulator formed on nonelemental silicon semiconductor body, e.g., Ge, SiGe, SiGeC (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.208][List of Patents for class 257 subclass E21.208]E21.208 Subclass E21.208 indent level is 5 Comprising layer having ferroelectric properties (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.209][List of Patents for class 257 subclass E21.209]E21.209 Subclass E21.209 indent level is 5 Making electrode structure comprising conductor-insulator-conuctor-insulator-semiconductor, e.g., gate stack for non-volatile memory (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.21][List of Patents for class 257 subclass E21.21]E21.21 Subclass E21.21 indent level is 5 Comprising charge trapping insulator (EPO)
[List of Pre Grant Publications for class 257 subclass E21.211][List of Patents for class 257 subclass E21.211]E21.211 Subclass E21.211 indent level is 4 Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (EPO)
[List of Pre Grant Publications for class 257 subclass E21.212][List of Patents for class 257 subclass E21.212]E21.212 Subclass E21.212 indent level is 5 Hydrogenation or deuterization, e.g., using atomic hydrogen or deuterium from a plasma (EPO)
[List of Pre Grant Publications for class 257 subclass E21.214][List of Patents for class 257 subclass E21.214]E21.214 Subclass E21.214 indent level is 5 To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (EPO)
[List of Pre Grant Publications for class 257 subclass E21.215][List of Patents for class 257 subclass E21.215]E21.215 Subclass E21.215 indent level is 6 Chemical or electrical treatment, e.g., electrolytic etching (EPO)
[List of Pre Grant Publications for class 257 subclass E21.237][List of Patents for class 257 subclass E21.237]E21.237 Subclass E21.237 indent level is 6 Mechanical treatment, e.g., grinding, polishing, cutting (EPO)
[List of Pre Grant Publications for class 257 subclass E21.24][List of Patents for class 257 subclass E21.24]E21.24 Subclass E21.24 indent level is 6 To form insulating layer thereon, e.g., for masking or by using photolithographic technique (EPO)
[List of Pre Grant Publications for class 257 subclass E21.241][List of Patents for class 257 subclass E21.241]E21.241 Subclass E21.241 indent level is 7 Post-treatment (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.258][List of Patents for class 257 subclass E21.258]E21.258 Subclass E21.258 indent level is 7 Using masks (EPO)
[List of Pre Grant Publications for class 257 subclass E21.259][List of Patents for class 257 subclass E21.259]E21.259 Subclass E21.259 indent level is 7 Organic layers, e.g., photoresist (EPO)
[List of Pre Grant Publications for class 257 subclass E21.266][List of Patents for class 257 subclass E21.266]E21.266 Subclass E21.266 indent level is 7 Inorganic layer (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.267][List of Patents for class 257 subclass E21.267]E21.267 Subclass E21.267 indent level is 8 Composed of alternated layers or of mixtures of nitrides and oxides or of oxynitrides, e.g., formation of oxynitride by oxidation of nitride layer (EPO)
[List of Pre Grant Publications for class 257 subclass E21.268][List of Patents for class 257 subclass E21.268]E21.268 Subclass E21.268 indent level is 8 Of silicon (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.27][List of Patents for class 257 subclass E21.27]E21.27 Subclass E21.27 indent level is 8 Carbon layer, e.g., diamond-like layer (EPO)
[List of Pre Grant Publications for class 257 subclass E21.271][List of Patents for class 257 subclass E21.271]E21.271 Subclass E21.271 indent level is 8 Composed of oxide or glassy oxide or oxide based glass (EPO)
[List of Pre Grant Publications for class 257 subclass E21.292][List of Patents for class 257 subclass E21.292]E21.292 Subclass E21.292 indent level is 8 Inorganic layer composed of nitride (EPO)
[List of Pre Grant Publications for class 257 subclass E21.294][List of Patents for class 257 subclass E21.294]E21.294 Subclass E21.294 indent level is 6 Deposition/post-treatment of noninsulating, e.g., conductive - or resistive - layers on insulating layers (EPO)
[List of Pre Grant Publications for class 257 subclass E21.317][List of Patents for class 257 subclass E21.317]E21.317 Subclass E21.317 indent level is 5 To modify their internal properties, e.g., to produce internal imperfections (EPO)
[List of Pre Grant Publications for class 257 subclass E21.323][List of Patents for class 257 subclass E21.323]E21.323 Subclass E21.323 indent level is 5 Of diamond body (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.327][List of Patents for class 257 subclass E21.327]E21.327 Subclass E21.327 indent level is 5 Application of electric current or field, e.g., for electroforming (EPO)
[List of Pre Grant Publications for class 257 subclass E21.328][List of Patents for class 257 subclass E21.328]E21.328 Subclass E21.328 indent level is 4 Radiation treatment (EPO)
[List of Pre Grant Publications for class 257 subclass E21.35][List of Patents for class 257 subclass E21.35]E21.35 Subclass E21.35 indent level is 4 Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (EPO)
[List of Pre Grant Publications for class 257 subclass E21.351][List of Patents for class 257 subclass E21.351]E21.351 Subclass E21.351 indent level is 5 Device comprising one or two electrodes, e.g., diode, resistor or capacitor with PN or Schottky junctions (EPO)
[List of Pre Grant Publications for class 257 subclass E21.369][List of Patents for class 257 subclass E21.369]E21.369 Subclass E21.369 indent level is 5 Device comprising three or more electrodes (EPO)
[List of Pre Grant Publications for class 257 subclass E21.394][List of Patents for class 257 subclass E21.394]E21.394 Subclass E21.394 indent level is 4 Multi-step process for the manufacture of unipolar device (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.395][List of Patents for class 257 subclass E21.395]E21.395 Subclass E21.395 indent level is 5 Transistor-like structure, e.g., hot electron transistor (HET); metal base transistor (MBT); resonant tunneling HET (RHET); resonant tunneling transistor (RTT ); bulk barrier transistor (BBT); planar doped barrier transistor (PDBT); charge injection transistor (CHINT); ballistic transistor (EPO)
[List of Pre Grant Publications for class 257 subclass E21.396][List of Patents for class 257 subclass E21.396]E21.396 Subclass E21.396 indent level is 5 Metal-insulator-semiconductor capacitor, e.g., trench capacitor (EPO)
[List of Pre Grant Publications for class 257 subclass E21.398][List of Patents for class 257 subclass E21.398]E21.398 Subclass E21.398 indent level is 5 Active layer is Group III-V compound (EPO)
[List of Pre Grant Publications for class 257 subclass E21.4][List of Patents for class 257 subclass E21.4]E21.4 Subclass E21.4 indent level is 5 Field-effect transistor (EPO)
[List of Pre Grant Publications for class 257 subclass E21.401][List of Patents for class 257 subclass E21.401]E21.401 Subclass E21.401 indent level is 6 Using static field induced region, e.g., SIT, PBT (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.403][List of Patents for class 257 subclass E21.403]E21.403 Subclass E21.403 indent level is 6 With heterojunction interface channel or gate, e.g., HFET, HIGFET, SISFET, HJFET, HEMT (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.404][List of Patents for class 257 subclass E21.404]E21.404 Subclass E21.404 indent level is 6 With one or zero or quasi-one or quasi-zero dimensional charge carrier gas channel, e.g., quantum wire FET; single electron trans istor (SET); striped channel transistor; coulomb blockade device (EPO)
[List of Pre Grant Publications for class 257 subclass E21.405][List of Patents for class 257 subclass E21.405]E21.405 Subclass E21.405 indent level is 6 Active layer is Group III-V compound, e.g., III-V velocity modulation transistor (VMT), NERFET (EPO)
[List of Pre Grant Publications for class 257 subclass E21.409][List of Patents for class 257 subclass E21.409]E21.409 Subclass E21.409 indent level is 6 With an insulated gate (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.41][List of Patents for class 257 subclass E21.41]E21.41 Subclass E21.41 indent level is 7 Vertical transistor (EPO)
[List of Pre Grant Publications for class 257 subclass E21.411][List of Patents for class 257 subclass E21.411]E21.411 Subclass E21.411 indent level is 7 Thin film unipolar transistor (EPO)
[List of Pre Grant Publications for class 257 subclass E21.417][List of Patents for class 257 subclass E21.417]E21.417 Subclass E21.417 indent level is 7 With channel containing layer, e.g., p-base, fo rmed in or on drain region, e.g., DMOS transistor (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.421][List of Patents for class 257 subclass E21.421]E21.421 Subclass E21.421 indent level is 7 With multiple gate, one gate having MOS structure and others having same or a different structure, i.e., non MOS, e.g., JFET gate (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.422][List of Patents for class 257 subclass E21.422]E21.422 Subclass E21.422 indent level is 7 With floating gate (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.423][List of Patents for class 257 subclass E21.423]E21.423 Subclass E21.423 indent level is 7 With charge trapping gate insulator, e.g., MNOS transistor (EPO)
[List of Pre Grant Publications for class 257 subclass E21.424][List of Patents for class 257 subclass E21.424]E21.424 Subclass E21.424 indent level is 7 Lateral single gate silicon transistor (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.435][List of Patents for class 257 subclass E21.435]E21.435 Subclass E21.435 indent level is 7 Lateral single gate single channel silicon transistor with both lightly doped source and drain extensions and source and drain self-aligned to sides of gate, e.g., LDD MOSFET, DDD MOSFET (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.436][List of Patents for class 257 subclass E21.436]E21.436 Subclass E21.436 indent level is 7 Gate comprising layer with ferroelectric properties (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.437][List of Patents for class 257 subclass E21.437]E21.437 Subclass E21.437 indent level is 7 With lightly doped drain selectively formed at side of gate (EPO)
[List of Pre Grant Publications for class 257 subclass E21.438][List of Patents for class 257 subclass E21.438]E21.438 Subclass E21.438 indent level is 7 Using self-aligned silicidation, i.e., salicide (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.44][List of Patents for class 257 subclass E21.44]E21.44 Subclass E21.44 indent level is 7 Using self-aligned selective metal deposition simultaneously on gate and on source or drain (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.441][List of Patents for class 257 subclass E21.441]E21.441 Subclass E21.441 indent level is 7 Active layer is Group III-V compound (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.442][List of Patents for class 257 subclass E21.442]E21.442 Subclass E21.442 indent level is 7 With gate at side of channel (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.443][List of Patents for class 257 subclass E21.443]E21.443 Subclass E21.443 indent level is 7 Using self-aligned punch through stopper or threshold implant under gate region (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.444][List of Patents for class 257 subclass E21.444]E21.444 Subclass E21.444 indent level is 7 Using dummy gate wherein at least part of final gate is self-aligned to dummy gate (EPO)
[List of Pre Grant Publications for class 257 subclass E21.445][List of Patents for class 257 subclass E21.445]E21.445 Subclass E21.445 indent level is 6 With PN junction or heterojunction gate (EPO)
[List of Pre Grant Publications for class 257 subclass E21.45][List of Patents for class 257 subclass E21.45]E21.45 Subclass E21.45 indent level is 6 With Schottky gate, e.g., MESFET (EPO)
[List of Pre Grant Publications for class 257 subclass E21.456][List of Patents for class 257 subclass E21.456]E21.456 Subclass E21.456 indent level is 5 Charge transfer device (EPO)
[List of Pre Grant Publications for class 257 subclass E21.459][List of Patents for class 257 subclass E21.459]E21.459 Subclass E21.459 indent level is 3 Device having semiconductor body other than carbon, Si, Ge, SiC, Se, Te, Cu 2 O, CuI, and Group III-V compounds with or without impurities, e.g., doping materials (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.46][List of Patents for class 257 subclass E21.46]E21.46 Subclass E21.46 indent level is 4 Multistep process (EPO)
[List of Pre Grant Publications for class 257 subclass E21.461][List of Patents for class 257 subclass E21.461]E21.461 Subclass E21.461 indent level is 4 Deposition of semiconductor material on substrate, e.g., epitaxial growth (EPO)
[List of Pre Grant Publications for class 257 subclass E21.466][List of Patents for class 257 subclass E21.466]E21.466 Subclass E21.466 indent level is 4 Diffusion of impurity material, e.g., dopant, electrode material, into or out of semiconductor body, or between semiconductor regions (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.47][List of Patents for class 257 subclass E21.47]E21.47 Subclass E21.47 indent level is 4 Alloying of impurity material, e.g., dopant, electrode material, with semiconductor body (EPO)
[List of Pre Grant Publications for class 257 subclass E21.471][List of Patents for class 257 subclass E21.471]E21.471 Subclass E21.471 indent level is 4 Radiation treatment (EPO)
[List of Pre Grant Publications for class 257 subclass E21.476][List of Patents for class 257 subclass E21.476]E21.476 Subclass E21.476 indent level is 4 Manufacture of electrodes on semiconductor bodies using processes or apparatus other than epitaxial growth, e.g., coating, diffusion, or alloying, or radiation treatment (EPO)
[List of Pre Grant Publications for class 257 subclass E21.482][List of Patents for class 257 subclass E21.482]E21.482 Subclass E21.482 indent level is 4 Treatment of semiconductor body using process other than electromagnetic radiation (EPO)
[List of Pre Grant Publications for class 257 subclass E21.499][List of Patents for class 257 subclass E21.499]E21.499 Subclass E21.499 indent level is 3 Assembling semiconductor devices, e.g., packaging , including mounting, encapsulating, or treatment of packaged semiconductor (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.5][List of Patents for class 257 subclass E21.5]E21.5 Subclass E21.5 indent level is 4 Mounting semiconductor bodies in container (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.501][List of Patents for class 257 subclass E21.501]E21.501 Subclass E21.501 indent level is 4 Providing fillings in container, e.g., gas fillings (EPO)
[List of Pre Grant Publications for class 257 subclass E21.502][List of Patents for class 257 subclass E21.502]E21.502 Subclass E21.502 indent level is 4 Encapsulation, e.g., encapsulation layer, coating (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.505][List of Patents for class 257 subclass E21.505]E21.505 Subclass E21.505 indent level is 4 Insulative mounting semiconductor device on support (EPO)
[List of Pre Grant Publications for class 257 subclass E21.506][List of Patents for class 257 subclass E21.506]E21.506 Subclass E21.506 indent level is 4 Attaching or detaching leads or other conductive members, to be used for carrying current to or from device in operation (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.52][List of Patents for class 257 subclass E21.52]E21.52 Subclass E21.52 indent level is 2 Devices having no potential-jump barrier or surface barrier (EPO)
[List of Pre Grant Publications for class 257 subclass E21.521][List of Patents for class 257 subclass E21.521]E21.521 Subclass E21.521 indent level is 1 Testing or measuring during manufacture or treatment or reliability measurement, i.e., testing of parts followed by no processing which modifies parts as such (EPO)
[List of Pre Grant Publications for class 257 subclass E21.532][List of Patents for class 257 subclass E21.532]E21.532 Subclass E21.532 indent level is 1 Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (EPO)
[List of Pre Grant Publications for class 257 subclass E21.533][List of Patents for class 257 subclass E21.533]E21.533 Subclass E21.533 indent level is 2 Of thick- or thin-film circuits or parts thereof (EPO)
[List of Pre Grant Publications for class 257 subclass E21.536][List of Patents for class 257 subclass E21.536]E21.536 Subclass E21.536 indent level is 2 Manufacture of specific parts of devices (EPO)
[List of Pre Grant Publications for class 257 subclass E21.537][List of Patents for class 257 subclass E21.537]E21.537 Subclass E21.537 indent level is 3 Making of localized buried regions, e.g., buried collector layer, internal connection, substrate contacts (EPO)
[List of Pre Grant Publications for class 257 subclass E21.54][List of Patents for class 257 subclass E21.54]E21.54 Subclass E21.54 indent level is 3 Making of isolation regions between components (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.541][List of Patents for class 257 subclass E21.541]E21.541 Subclass E21.541 indent level is 4 Between components manufactured in active substrate comprising SiC compound semiconductor (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.542][List of Patents for class 257 subclass E21.542]E21.542 Subclass E21.542 indent level is 4 Between components manufactured in active substrate comprising Group III-V compound semiconductor (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.543][List of Patents for class 257 subclass E21.543]E21.543 Subclass E21.543 indent level is 4 Between components manufactured in active substrate comprising Group II-VI compound semiconductor (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.544][List of Patents for class 257 subclass E21.544]E21.544 Subclass E21.544 indent level is 4 PN junction isolation (EPO)
[List of Pre Grant Publications for class 257 subclass E21.545][List of Patents for class 257 subclass E21.545]E21.545 Subclass E21.545 indent level is 4 Dielectric regions, e.g., EPIC dielectric isolation, LOCOS; trench refilling techniques, SOI technology, use of channel stoppers (EPO)
[List of Pre Grant Publications for class 257 subclass E21.546][List of Patents for class 257 subclass E21.546]E21.546 Subclass E21.546 indent level is 5 Using trench refilling with dielectric materials (EPO)
[List of Pre Grant Publications for class 257 subclass E21.552][List of Patents for class 257 subclass E21.552]E21.552 Subclass E21.552 indent level is 5 Using local oxidation of silicon, e.g., LOCOS, SWAMI, SILO (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.56][List of Patents for class 257 subclass E21.56]E21.56 Subclass E21.56 indent level is 5 Dielectric isolation using EPIC technique, i.e., epitaxial passivated integrated circuit (EPO)
[List of Pre Grant Publications for class 257 subclass E21.561][List of Patents for class 257 subclass E21.561]E21.561 Subclass E21.561 indent level is 5 Using semiconductor or insulator technology, i.e., SOI technology (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.571][List of Patents for class 257 subclass E21.571]E21.571 Subclass E21.571 indent level is 5 Using selective deposition of single crystal silicon, i.e., SEG technique (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.572][List of Patents for class 257 subclass E21.572]E21.572 Subclass E21.572 indent level is 4 Polycrystalline semiconductor regions (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.573][List of Patents for class 257 subclass E21.573]E21.573 Subclass E21.573 indent level is 4 Air gaps (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.574][List of Patents for class 257 subclass E21.574]E21.574 Subclass E21.574 indent level is 4 Isolation by field effect (EPO)
[List of Pre Grant Publications for class 257 subclass E21.575][List of Patents for class 257 subclass E21.575]E21.575 Subclass E21.575 indent level is 3 Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (EPO)
[List of Pre Grant Publications for class 257 subclass E21.576][List of Patents for class 257 subclass E21.576]E21.576 Subclass E21.576 indent level is 4 Characterized by formation and post treatment of dielectrics, e.g., planarizing (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.597][List of Patents for class 257 subclass E21.597]E21.597 Subclass E21.597 indent level is 4 Formed through semiconductor substrate (EPO)
[List of Pre Grant Publications for class 257 subclass E21.598][List of Patents for class 257 subclass E21.598]E21.598 Subclass E21.598 indent level is 2 Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (EPO)
[List of Pre Grant Publications for class 257 subclass E21.599][List of Patents for class 257 subclass E21.599]E21.599 Subclass E21.599 indent level is 3 With subsequent division of substrate into plural individual devices (EPO)
[List of Pre Grant Publications for class 257 subclass E21.6][List of Patents for class 257 subclass E21.6]E21.6 Subclass E21.6 indent level is 4 Involving separation of active layers from substrate (EPO)
[List of Pre Grant Publications for class 257 subclass E21.602][List of Patents for class 257 subclass E21.602]E21.602 Subclass E21.602 indent level is 4 To produce devices each consisting of plurality of components, e.g., integrated circuits (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.603][List of Patents for class 257 subclass E21.603]E21.603 Subclass E21.603 indent level is 5 Substrate is semiconductor, using combination of semiconductor substrates, e.g., diamond, SiC, Si, Group III-V compound, and/or Group II-VI compound semiconductor substrates (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.604][List of Patents for class 257 subclass E21.604]E21.604 Subclass E21.604 indent level is 5 Substrate is semiconductor, using diamond technology (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.605][List of Patents for class 257 subclass E21.605]E21.605 Subclass E21.605 indent level is 5 Substrate is semiconductor, using SiC technology (EPO)
[List of Pre Grant Publications for class 257 subclass E21.606][List of Patents for class 257 subclass E21.606]E21.606 Subclass E21.606 indent level is 5 Substrate being semiconductor, using silicon technology (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.607][List of Patents for class 257 subclass E21.607]E21.607 Subclass E21.607 indent level is 6 Substrate being semiconductor, using silicon technology (EPO)
[List of Pre Grant Publications for class 257 subclass E21.608][List of Patents for class 257 subclass E21.608]E21.608 Subclass E21.608 indent level is 6 Bipolar technology (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.614][List of Patents for class 257 subclass E21.614]E21.614 Subclass E21.614 indent level is 6 Three-dimensional integrated circuits stacked in different levels (EPO)
[List of Pre Grant Publications for class 257 subclass E21.615][List of Patents for class 257 subclass E21.615]E21.615 Subclass E21.615 indent level is 6 Field-effect technology (EPO)
[List of Pre Grant Publications for class 257 subclass E21.616][List of Patents for class 257 subclass E21.616]E21.616 Subclass E21.616 indent level is 7 MIS technology (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.617][List of Patents for class 257 subclass E21.617]E21.617 Subclass E21.617 indent level is 8 Combination of charge coupled devices, i.e., CCD or BBD (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.618][List of Patents for class 257 subclass E21.618]E21.618 Subclass E21.618 indent level is 8 With particular manufacturing method of channel, e.g., channel implants, halo or pocket implants, or channel materials (EPO)
[List of Pre Grant Publications for class 257 subclass E21.619][List of Patents for class 257 subclass E21.619]E21.619 Subclass E21.619 indent level is 8 With particular manufacturing method of source or drain, e.g., specific S or D implants or silicided S or D structures or raised S or D structures (EPO)
[List of Pre Grant Publications for class 257 subclass E21.621][List of Patents for class 257 subclass E21.621]E21.621 Subclass E21.621 indent level is 8 With particular manufacturing method of gate conductor, e.g., particular materials, shapes (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.625][List of Patents for class 257 subclass E21.625]E21.625 Subclass E21.625 indent level is 8 With particular manufacturing method of gate insulating layer, e.g., different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.626][List of Patents for class 257 subclass E21.626]E21.626 Subclass E21.626 indent level is 8 With particular manufacturing method of gate sidewall spacers, e.g., double spacers, particular spacer material or shape (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.627][List of Patents for class 257 subclass E21.627]E21.627 Subclass E21.627 indent level is 8 Interconnection or wiring or contact manufacturing related aspects (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.628][List of Patents for class 257 subclass E21.628]E21.628 Subclass E21.628 indent level is 8 Isolation region manufacturing related aspects, e.g., to avoid interaction of isolation region with adjacent structure (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.629][List of Patents for class 257 subclass E21.629]E21.629 Subclass E21.629 indent level is 8 With particular manufacturing method of vertical transistor structures, i.e., with channel vertical to substrate surface (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.63][List of Patents for class 257 subclass E21.63]E21.63 Subclass E21.63 indent level is 8 With particular manufacturing method of wells or tubs, e.g., twin tubs, high energy well implants, buried implanted layers for lateral isolation (BILLI) (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.631][List of Patents for class 257 subclass E21.631]E21.631 Subclass E21.631 indent level is 8 Combination of enhancement and depletion transistors (EPO)
[List of Pre Grant Publications for class 257 subclass E21.632][List of Patents for class 257 subclass E21.632]E21.632 Subclass E21.632 indent level is 8 Complementary field-effect transistors, e.g., CMOS (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.644][List of Patents for class 257 subclass E21.644]E21.644 Subclass E21.644 indent level is 8 With particular manufacturing method of wells or tubs, e.g., twin tubs, high energy well implants, buried implanted layers for lateral isolation (BILLI) (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.645][List of Patents for class 257 subclass E21.645]E21.645 Subclass E21.645 indent level is 8 Memory structures (EPO)
[List of Pre Grant Publications for class 257 subclass E21.646][List of Patents for class 257 subclass E21.646]E21.646 Subclass E21.646 indent level is 8 Dynamic random access memory structures (DRAM) (EPO)
[List of Pre Grant Publications for class 257 subclass E21.647][List of Patents for class 257 subclass E21.647]E21.647 Subclass E21.647 indent level is 9 Characterized by type of capacitor (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.661][List of Patents for class 257 subclass E21.661]E21.661 Subclass E21.661 indent level is 9 Static random access memory structures (SRAM) (EPO)
[List of Pre Grant Publications for class 257 subclass E21.662][List of Patents for class 257 subclass E21.662]E21.662 Subclass E21.662 indent level is 9 Read-only memory structures (ROM), i.e., nonvolatile memory structures (EPO)
[List of Pre Grant Publications for class 257 subclass E21.663][List of Patents for class 257 subclass E21.663]E21.663 Subclass E21.663 indent level is 10 Ferroelectric nonvolatile memory structures (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.665][List of Patents for class 257 subclass E21.665]E21.665 Subclass E21.665 indent level is 10 Magnetic nonvolatile memory structures, e.g., MRAM (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.666][List of Patents for class 257 subclass E21.666]E21.666 Subclass E21.666 indent level is 10 PROM (EPO)
[List of Pre Grant Publications for class 257 subclass E21.667][List of Patents for class 257 subclass E21.667]E21.667 Subclass E21.667 indent level is 10 ROM only (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.679][List of Patents for class 257 subclass E21.679]E21.679 Subclass E21.679 indent level is 10 Charge trapping insulator nonvolatile memory structures (EPO)
[List of Pre Grant Publications for class 257 subclass E21.68][List of Patents for class 257 subclass E21.68]E21.68 Subclass E21.68 indent level is 10 Electrically programmable (EPROM), i.e., floating gate memory structures (EPO)
[List of Pre Grant Publications for class 257 subclass E21.695][List of Patents for class 257 subclass E21.695]E21.695 Subclass E21.695 indent level is 6 Combination of bipolar and field-effect technologies (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.697][List of Patents for class 257 subclass E21.697]E21.697 Subclass E21.697 indent level is 5 Substrate is Group III-V semiconductor (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.698][List of Patents for class 257 subclass E21.698]E21.698 Subclass E21.698 indent level is 5 Substrate is Group II-VI semiconductor (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.699][List of Patents for class 257 subclass E21.699]E21.699 Subclass E21.699 indent level is 5 Substrate is semiconductor other than diamond, SiC, Si, Group III-V compound, or Group II-VI compound (EPO)
[List of Pre Grant Publications for class 257 subclass E21.7][List of Patents for class 257 subclass E21.7]E21.7 Subclass E21.7 indent level is 4 Substrate is nonsemiconductor body, e.g., insulating body (EPO)
 [List of Pre Grant Publications for class 257 subclass E21.705][List of Patents for class 257 subclass E21.705]E21.705 Subclass E21.705 indent level is 2 Assembly of devices consisting of solid-state components formed in or on a common substrate; assembly of integrated circuit devices (EPO)
 
CROSS-REFERENCE ART COLLECTIONS
 
 [List of Pre Grant Publications for class 257 subclass 900][List of Patents for class 257 subclass 900]900 MOSFET TYPE GATE SIDEWALL INSULATING SPACER
 [List of Pre Grant Publications for class 257 subclass 901][List of Patents for class 257 subclass 901]901 MOSFET SUBSTRATE BIAS
 [List of Pre Grant Publications for class 257 subclass 902][List of Patents for class 257 subclass 902]902 FET WITH METAL SOURCE REGION
[List of Pre Grant Publications for class 257 subclass 903][List of Patents for class 257 subclass 903]903 FET CONFIGURATION ADAPTED FOR USE AS STATIC MEMORY CELL
 [List of Pre Grant Publications for class 257 subclass 905][List of Patents for class 257 subclass 905]905 PLURAL DRAM CELLS SHARE COMMON CONTACT OR COMMON TRENCH
 [List of Pre Grant Publications for class 257 subclass 906][List of Patents for class 257 subclass 906]906 DRAM WITH CAPACITOR ELECTRODES USED FOR ACCESSING (E.G., BIT LINE IS CAPACITOR PLATE)
 [List of Pre Grant Publications for class 257 subclass 907][List of Patents for class 257 subclass 907]907 FOLDED BIT LINE DRAM CONFIGURATION
 [List of Pre Grant Publications for class 257 subclass 908][List of Patents for class 257 subclass 908]908 DRAM CONFIGURATION WITH TRANSISTORS AND CAPACITORS OF PAIRS OF CELLS ALONG A STRAIGHT LINE BETWEEN ADJACENT BIT LINES
 [List of Pre Grant Publications for class 257 subclass 909][List of Patents for class 257 subclass 909]909 MACROCELL ARRAYS (E.G., GATE ARRAYS WITH VARIABLE SIZE OR CONFIGURATION OF CELLS)
 [List of Pre Grant Publications for class 257 subclass 910][List of Patents for class 257 subclass 910]910 DIODE ARRAYS (E.G., DIODE READ-ONLY MEMORY ARRAY)
 [List of Pre Grant Publications for class 257 subclass 911][List of Patents for class 257 subclass 911]911 LIGHT SENSITIVE ARRAY ADAPTED TO BE SCANNED BY ELECTRON BEAM (E.G.,VIDICON DEVICE)
 [List of Pre Grant Publications for class 257 subclass 912][List of Patents for class 257 subclass 912]912 CHARGE TRANSFER DEVICE USING BOTH ELECTRON AND HOLE SIGNAL CARRIERS
 [List of Pre Grant Publications for class 257 subclass 913][List of Patents for class 257 subclass 913]913 WITH MEANS TO ABSORB OR LOCALIZE UNWANTED IMPURITIES OR DEFECTS FROM SEMICONDUCTORS (E.G., HEAVY METAL GETTERING)
 [List of Pre Grant Publications for class 257 subclass 914][List of Patents for class 257 subclass 914]914 POLYSILICON CONTAINING OXYGEN, NITROGEN, OR CARBON (E.G., SIPOS)
 [List of Pre Grant Publications for class 257 subclass 915][List of Patents for class 257 subclass 915]915 WITH TITANIUM NITRIDE PORTION OR REGION
 [List of Pre Grant Publications for class 257 subclass 916][List of Patents for class 257 subclass 916]916 NARROW BAND GAP SEMICONDUCTOR MATERIAL (<<1EV)
 [List of Pre Grant Publications for class 257 subclass 917][List of Patents for class 257 subclass 917]917 PLURAL DOPANTS OF SAME CONDUCTIVITY TYPE IN SAME REGION
 [List of Pre Grant Publications for class 257 subclass 918][List of Patents for class 257 subclass 918]918 LIGHT EMITTING REGENERATIVE SWITCHING DEVICE (E.G., LIGHT EMITTING SCR) ARRAYS, CIRCUITRY, ETC.
 [List of Pre Grant Publications for class 257 subclass 919][List of Patents for class 257 subclass 919]919 ELEMENTS OF SIMILAR CONSTRUCTION CONNECTED IN SERIES OR PARALLEL TO AVERAGE OUT MANUFACTURING VARIATIONS IN CHARACTERISTICS
 [List of Pre Grant Publications for class 257 subclass 920][List of Patents for class 257 subclass 920]920 CONDUCTOR LAYERS ON DIFFERENT LEVELS CONNECTED IN PARALLEL (E.G., TO REDUCE RESISTANCE)
 [List of Pre Grant Publications for class 257 subclass 921][List of Patents for class 257 subclass 921]921 RADIATION HARDENED SEMICONDUCTOR DEVICE
 [List of Pre Grant Publications for class 257 subclass 922][List of Patents for class 257 subclass 922]922 WITH MEANS TO PREVENT INSPECTION OF OR TAMPERING WITH AN INTEGRATED CIRCUIT (E.G., "SMART CARD", ANTI-TAMPER)
 [List of Pre Grant Publications for class 257 subclass 923][List of Patents for class 257 subclass 923]923 WITH MEANS TO OPTIMIZE ELECTRICAL CONDUCTOR CURRENT CARRYING CAPACITY (E.G., PARTICULAR CONDUCTOR ASPECT RATIO)
 [List of Pre Grant Publications for class 257 subclass 924][List of Patents for class 257 subclass 924]924 WITH PASSIVE DEVICE (E.G., CAPACITOR), OR BATTERY, AS INTEGRAL PART OF HOUSING OR HOUSING ELEMENT (E.G., CAP)
 [List of Pre Grant Publications for class 257 subclass 925][List of Patents for class 257 subclass 925]925 BRIDGE RECTIFIER MODULE
 [List of Pre Grant Publications for class 257 subclass 926][List of Patents for class 257 subclass 926]926 ELONGATED LEAD EXTENDING AXIALLY THROUGH ANOTHER ELONGATED LEAD
 [List of Pre Grant Publications for class 257 subclass 927][List of Patents for class 257 subclass 927]927 DIFFERENT DOPING LEVELS IN DIFFERENT PARTS OF PN JUNCTION TO PRODUCE SHAPED DEPLETION LAYER
 [List of Pre Grant Publications for class 257 subclass 928][List of Patents for class 257 subclass 928]928 WITH SHORTED PN OR SCHOTTKY JUNCTION OTHER THAN EMITTER JUNCTION
 [List of Pre Grant Publications for class 257 subclass 929][List of Patents for class 257 subclass 929]929 PN JUNCTION ISOLATED INTEGRATED CIRCUIT WITH ISOLATION WALLS HAVING MINIMUM DOPANT CONCENTRATION AT INTERMEDIATE DEPTH IN EPITAXIAL LAYER (E.G., DIFFUSED FROM BOTH SURFACES OF EPITAXIAL LAYER)
 [List of Pre Grant Publications for class 257 subclass 930][List of Patents for class 257 subclass 930]930 THERMOELECTRIC (E.G., PELTIER EFFECT) COOLING
 
FOREIGN ART COLLECTIONS
 
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