| Class 117 | SINGLE-CRYSTAL, ORIENTED-CRYSTAL, AND EPITAXY GROWTH PROCESSES; NON-COATING APPARATUS THEREFOR |
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![[List of Pre Grant Publications for class 117 subclass 1]](../as.gif) | ![[List of Patents for class 117 subclass 1]](../ps.gif) | 1 | PROCESSES JOINING INDEPENDENT CRYSTALS |
| | 2 | PROCESSES OF GROWTH WITH A SUBSEQUENT STEP ACTING ON THE CRYSTAL TO ADJUST THE IMPURITY AMOUNT (E.G., DIFFUSING, DOPING, GETTERING, IMPLANTING) |
| | 3 | PROCESSES OF GROWTH WITH A SUBSEQUENT STEP OF HEAT TREATING OR DELIBERATE CONTROLLED COOLING OF THE SINGLE-CRYSTAL |
| | 4 | PROCESSES OF GROWTH FROM SOLID OR GEL STATE (E.G., SOLID PHASE RECRYSTALLIZATION) |
| | 11 | PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE |
| | 12 |  Crucibleless process having movement of discrete droplets or solid particles to thin-film precursor (e.g., Verneuil method) |
| | 13 | Having pulling during growth (e.g., Czochralski method, zone drawing) |
| | 14 |  With a step of measuring, testing, or sensing (e.g., using TV, photo, or X-ray detector or weight changes) |
| | 17 | With contact with an immiscible liquid (e.g., LEC) |
| | 19 | Forming an intended mixture (excluding mixed crystal) (e.g., doped) |
| | 20 |  Comprising a silicon crystal with oxygen containing impurity |
| | 21 | Comprising a semiconductor with a charge carrier impurity |
| | 23 | Shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, Stepanov method) |
| | 24 | Embedded in product (e.g., string-stabilized web) |
| | 25 | Defines a product with a hollow structure (e.g., tube) |
| | 26 | Defines a flat product |
| | 28 | Including non-coincident axes of rotation (e.g., relative eccentric) |
| | 29 | Passing non-induced electric current through a crystal-liquid interface (e.g., Peltier) |
| | 30 | With liquid flow control or manipulation during growth (e.g., mixing, replenishing, magnetic levitation, stabilization, convection control, baffle) |
| | 31 | Including a sectioned crucible (e.g., double crucible, baffle) |
| | 32 | Using a magnetic field |
| | 33 | Replenishing of precursor during growth (e.g., continuous method, zone pulling) |
| | 35 | With a significant technique for (a) preliminary preparation or growth starting or (b) product handling or growth ending (e.g., arrangement of or crystallography of seed) |
| | 36 | Precursor intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux, crystal lattice modifier) |
| | 37 | Having moving solid-liquid-solid region |
| | 38 | Including a step of measuring, testing, or sensing |
| | 41 | Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, travelling solvent, flux) |
| | 43 | Distinctly layered product (e.g., twin, SOI, epitaxial crystallization) |
| | 44 | Adjacent single-crystal product regions separately formed (e.g., multiple non-coextensive passes of a scanning laser) |
| | 45 | Non-planar crystal grown (e.g., ELO) |
| | 46 | Movement includes a horizontal component |
| | 47 | Flat, free-standing (i.e., substrate-free) product (e.g., ribbon, film, sheet) |
| | 48 | Solid heating means contacting the liquid (e.g., immersed) |
| | 49 | Liquid zone contacts only precursor and product solids (e.g., crucibleless, liquid encapsulant, float zone) |
| | 53 | Forming a single-crystal region by liquefying a region of a single-crystal and adjusting the composition of the liquid (e.g., alloying, regrowth) |
| | 54 | Liquid phase epitaxial growth (LPE) |
| | 55 | With a step of measuring, testing, or sensing |
| | 56 | Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) |
| | 58 | With pretreatment of epitaxy substrate (e.g., autodoping control, cleaning, polishing, leveling, masking) |
| | 59 | Including a tipping system (e.g., rotation, pivoting) |
| | 60 | Including a vertical dipping system |
| | 61 | Including a sliding boat system |
| | 62 | Electric current controlled or induced growth |
| | 63 | Characterized by specified crystallography of the substrate |
| | 64 | Precursor composition intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux) |
| | 68 | Having growth from a solution comprising a solvent which is liquid at or below 20 degrees Celsius (e.g., aqueous solution) |
| | 69 | With a step of measuring, testing, or sensing |
| | 70 | Growth accompanied by material removal (other than the product) from solution (e.g., solvent evaporation, osmosis) |
| | 71 | At pressure above 1 atmosphere (e.g., hydrothermal processes) |
| | 73 | Havin growth from molten state (e.g., solution melt) |
| | 74 | Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) |
| | 75 | Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament) (e.g., VLS method) |
| | 76 | Using a scavenger agent (e.g., remove, add, deplete, or redistribute impurity or dopant) |
| | 77 | Gas or vapor state precursor or overpressure |
| | 78 | Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, solvent, flux) |
| | 79 | Unusable portion contains a metal atom (e.g., diamond or CBN growth in metal solvent) |
| | 80 | Unusable portion contains an oxygen atom (e.g., oxide flux) |
| | 81 | Growth confined by a solid member other than seed or product (e.g., Bridgman-Stockbarger method) |
| | 84 | FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION) |
| | 85 | With a step of measuring, testing, or sensing |
| | 87 | Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament) |
| | 88 | With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., CVD) |
| | 89 | Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) |
| | 90 | With pretreatment of substrate (e.g., coacting ablating) |
| | 91 | With a chemical reaction (except ionization) in a disparate zone to form a precursor |
| | 92 | Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, PECVD, CBE, MOMBE, RF induction, laser) |
| | 93 | With significant flow manipulation or condition, other than merely specifying the components or their sequence or both |
| | 94 | With pretreatment or preparation of a base (e.g., annealing) |
| | 98 | With a movement of substrate or vapor or gas supply means during growth (e.g., substrate rotation) |
| | 99 | With a chemical reaction (except ionization) in a disparate zone to form a precursor (e.g., transport processes) |
| | 101 | Characterized by specified crystallography or arrangement of substrate (e.g., wafer cassette, Miller index) |
| | 102 | With significant flow manipulation or condition, other than merely specifying the components or their sequence or both |
| | 103 | Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, PECVD, CBE, MOMBE, RF induction, laser) |
| | 104 | Using an organic precursor (e.g., propane, metal-organic, MOCVD, MOVPE) |
| | 105 | Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing) |
| | 106 | With pretreatment or preparation of a base (e.g., annealing) |
| | 107 | With movement of substrate or vapor or gas supply means during growth |
| | 108 | Using an energy beam or field, a particle beam or field, or a plasma (e.g., MBE) |
| | 109 | Fully-sealed or vacuum-maintained chamber (e.g., ampoule) |
| | 200 | APPARATUS |
| | 201 | With means for measuring, testing, or sensing |
| | 204 | With means for treating single-crystal (e.g., heat treating) |
| | 205 | For forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament) |
| | 206 | For crystallization from liquid or supercritical state |
| | 207 | Crucibleless apparatus having means providing movement of discrete droplets or solid particles to thin-film precursor (e.g., Verneuil method) |
| | 208 | Seed pulling |
| | 209 | Including solid member shaping means other than seed or product (e.g., EDFG die) |
| | 210 |  Means for forming a hollow structure (e.g., tube, polygon) |
| | 211 | Including means forming a flat shape (e.g., ribbon) |
| | 213 | Including a sectioned crucible (e.g., double crucible, baffle) |
| | 214 | Including details of precursor replenishment |
| | 215 | Including sealing means details |
| | 216 | Including a fully-sealed or vacuum-maintained crystallization chamber (e.g., ampoule) |
| | 217 | Including heating or cooling details (e.g., shield configuration) |
| | 218 | Including details of means providing product movement (e.g., shaft guides, servo means) |
| | 219 | Having means for producing a moving solid-liquid-solid zone |
| | 220 | Includin a solid member other than seed or product contacting the liquid (e.g., crucible, immersed heating element) |
| | 221 | Havind details of a stabilizing feature |
| | 222 | Including heating or cooling details |
| | 223 | Shape defined by a solid member other than seed or product (e.g., Bridgman-Stockbarger) |
| | 224 | Including pressurized crystallization means (e.g., hydrothermal) |
| CROSS-REFERENCE ART COLLECTIONS | ||
| | 900 | APPARATUS CHARACTERIZED BY COMPOSITION OR TREATMENT THEREOF (E.G., SURFACE FINISH, SURFACE COATING) |
| | 901 | LEVITATION, REDUCED GRAVITY, MICROGRAVITY, SPACE |
| | 902 | SPECIFIED ORIENTATION, SHAPE, CRYSTALLOGRAPHY, OR SIZE OF SEED OR SUBSTRATE |
| | 903 | DENDRITE OR WEB OR CAGE TECHNIQUE |
| | 904 | LASER BEAM |
| | 905 | ELECTRON BEAM |
| | 906 | SPECIAL ATMOSPHERE OTHER THAN VACUUM OR INERT |
| | 910 | DOWNWARD PULLING |
| | 911 | SEED OR ROD HOLDERS |
| | 912 | REPLENISHING LIQUID PRECURSOR, OTHER THAN A MOVING ZONE |
| | 913 | GRAPHOEPITAXY OR SURFACE MODIFICATION TO ENHANCE EPITAXY |
| | 914 | CRYSTALLIZATION ON A CONTINUOUS MOVING SUBSTRATE OR COOLING SURFACE (E.G., WHEEL, CYLINDER, BELT) |
| | 915 | SEPARATING FROM SUBSTRATE |
| | 916 | OXYGEN TESTING |
| | 917 | MAGNETIC |
| | 918 | SINGLE-CRYSTAL WAVEGUIDE |
| | 919 | Organic |
| E-subclasses in USPC Class 117/920-958 were created as duplicates of EPO groups in subclass C30B. With the implementation of CPC, these E-subclasses should no longer be used. Instead, use CPC subclass C30B. | ||
| | 920 | SINGLE-CRYSTALS HAVING A HOLLOW (E.G., TUBE, CONCAVO-CONVEX) {C30B 29/66} |
| | 921 | SMALL DIAMETER, ELONGATE, GENERALLY CYLINDRICAL SINGLE-CRYSTAL (E.G., WHISKERS, NEEDLES, FILAMENTS, FIBERS, WIRES) {C30B 29/62} |
| | 922 | FREE-STANDING, FLAT SINGLE-CRYSTAL (E.G., PLATELET, PLATE, STRIP, DISK, TAPE, SHEET, RIBBON) {C30B 29/64} |
| | 923 | SINGLE-CRYSTAL OF COMPLEX GEOMETRY (E.G., PATTERNED, ELO) {C30B 29/66} |
| | 924 | HOMOGENEOUS COMPOSITION PRODUCT WITH ENLARGED CRYSTALS OR ORIENTED-CRYSTALS (E.G., COLUMNAR) |
| | 925 | ORGANIC COMPOUND CONTAINING SINGLE-CRYSTAL {C30B 29/54} |
| | 926 | Tartrate containing (e.g., Rochelle salt) {C30B 29/56} |
| | 927 | Macromolecular compound containing (i.e., more than about 100 atoms) {C30B 29/58} |
| | 928 | SINGLE-CRYSTAL OF PURE OR INTENTIONALLY DOPED ELEMENT {C30B 29/02} |
| | 929 | Carbon (e.g., diamond) {C30B 29/04} |
| | 930 | Silicon from solid or gel state {C30B 29/06} |
| | 931 | Silicon from liquid or supercritical state {C30B 29/06} |
| | 932 | By pulling {C30B 29/06} |
| | 933 | By moving zone (not Verneuil) {C30B 29/06} |
| | 934 | By liquid phase epitaxy {C30B 29/06} |
| | 935 | Silicon from vapor or gaseous state {C30B 29/06} |
| | 936 | Germanium {C30B 29/08} |
| | 937 | INORGANIC CONTAINING SINGLE-CRYSTAL (E.G., COMPOUND, MIXTURE, COMPOSITE) {C30B 29/10} |
| | 938 | Gold, silver, or platinum containing {C30B 29/52} |
| | 939 | Free metal or intermetallic compound or silicon-metal compound based, except arsenic (e.g., alloys, SiGe, InSb) {C30B 29/40, 29/52} |
| | 940 | Halide containing (e.g., fluorphlogopite, fluor-mica) {C30B 29/12} |
| | 941 | Phosphorus-oxygen bond containing (e.g., phosphate (PO4)) {C30B 29/14} |
| | 942 | Silicon-oxygen bond containing (e.g., emerald, beryl, garnet, mica) {C30B 29/16} |
| | 944 | Oxygen compound containing (e.g., yttria stabilized zirconia) {C30B 29/16} |
| | 948 | Niobate, vanadate, or tantalate containing {C30B 29/30} |
| | 949 | Titanate, germanate, molybdate, or tungstate containing {C30B 29/32} |
| | 950 | Aluminum containing (e.g., AL2O3, ruby, corundum, sapphire, chrysoberyl) {C30B 29/20} |
| | 951 | Carbide containing (e.g., SiC) {C30B 29/36} |
| | 952 | Nitride containing (e.g., GaN, cBN) {C30B 29/38} |
| | 953 | {B,Al,Ga,In,Tl}{P,As,Sb,Bi} compound containing, except intermetallics thereof (i.e., except {Al,Ga,In,Tl}{Sb,Bi}) {C30B 29/40} |
| | 954 | Gallium arsenide containing (e.g., GaAlAs, GaAs) {C30B 29/42} |
| | 955 | Gallium phosphide containing {C30B 29/44} |
| | 956 | {Zn,Cd,Hg}{S,Se,Te} compound containing {C30B 29/46} |
| FOREIGN ART COLLECTIONS | ||
| FOR000 | CLASS-RELATED FOREIGN DOCUMENTS |