8

Of amorphous precursor

9

Epitaxy formation

10

Using temperature gradient (e.g., moving zone recrystallization)

14

With a step of measuring, testing, or sensing (e.g., using TV, photo, or X-ray detector or weight changes)

17

With contact with an immiscible liquid (e.g., LEC)

19

Forming an intended mixture (excluding mixed crystal) (e.g., doped)

23

Shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, Stepanov method)

28

Including non-coincident axes of rotation (e.g., relative eccentric)

29

Passing non-induced electric current through a crystal-liquid interface (e.g., Peltier)

30

With liquid flow control or manipulation during growth (e.g., mixing, replenishing, magnetic levitation, stabilization, convection control, baffle)

35

With a significant technique for (a) preliminary preparation or growth starting or (b) product handling or growth ending (e.g., arrangement of or crystallography of seed)

36

Precursor intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux, crystal lattice modifier)

38

Including a step of measuring, testing, or sensing

40

Liquid precursor penetrating only a portion of a single-crystal, thereby liquefying it, and single-crystal formation therefrom which adjoins the never-liquefied portion of the single-crystal (e.g., liquid wire migration)

41

Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, travelling solvent, flux)

43

Distinctly layered product (e.g., twin, SOI, epitaxial crystallization)

46

Movement includes a horizontal component

47

Flat, free-standing (i.e., substrate-free) product (e.g., ribbon, film, sheet)

48

Solid heating means contacting the liquid (e.g., immersed)

49

Liquid zone contacts only precursor and product solids (e.g., crucibleless, liquid encapsulant, float zone)

55

With a step of measuring, testing, or sensing

56

Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)

58

With pretreatment of epitaxy substrate (e.g., autodoping control, cleaning, polishing, leveling, masking)

59

Including a tipping system (e.g., rotation, pivoting)

60

Including a vertical dipping system

61

Including a sliding boat system

62

Electric current controlled or induced growth

63

Characterized by specified crystallography of the substrate

64

Precursor composition intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux)

69

With a step of measuring, testing, or sensing

70

Growth accompanied by material removal (other than the product) from solution (e.g., solvent evaporation, osmosis)

71

At pressure above 1 atmosphere (e.g., hydrothermal processes)

74

Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)

75

Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament) (e.g., VLS method)

76

Using a scavenger agent (e.g., remove, add, deplete, or redistribute impurity or dopant)

77

Gas or vapor state precursor or overpressure

78

Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, solvent, flux)

81

Growth confined by a solid member other than seed or product (e.g., Bridgman-Stockbarger method)

86

With responsive control

89

Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)

94

With pretreatment or preparation of a base (e.g., annealing)

98

With a movement of substrate or vapor or gas supply means during growth (e.g., substrate rotation)

99

With a chemical reaction (except ionization) in a disparate zone to form a precursor (e.g., transport processes)

101

Characterized by specified crystallography or arrangement of substrate (e.g., wafer cassette, Miller index)

102

With significant flow manipulation or condition, other than merely specifying the components or their sequence or both

103

Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, PECVD, CBE, MOMBE, RF induction, laser)

104

Using an organic precursor (e.g., propane, metal-organic, MOCVD, MOVPE)

202

With responsive control means

203

With a window or port for visual observation or examination