Class   438	SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS
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HAVING BIOMATERIAL COMPONENT OR INTEGRATED WITH LIVING ORGANISM

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HAVING SUPERCONDUCTIVE COMPONENT

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HAVING MAGNETIC OR FERROELECTRIC COMPONENT

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REPAIR OR RESTORATION

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INCLUDING CONTROL RESPONSIVE TO SENSED CONDITION

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. (1 indent ) Interconnecting plural devices on semiconductor substrate

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. (1 indent ) Optical characteristic sensed

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.. (2 indent ) Chemical etching

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... (3 indent ) Plasma etching

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. (1 indent ) Electrical characteristic sensed

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.. (2 indent ) Utilizing integral test element

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.. (2 indent ) And removal of defect

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.. (2 indent ) Altering electrical property by material removal

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WITH MEASURING OR TESTING

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. (1 indent ) Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor

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. (1 indent ) Optical characteristic sensed

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. (1 indent ) Electrical characteristic sensed

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.. (2 indent ) Utilizing integral test element

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HAVING INTEGRAL POWER SOURCE (E.G., BATTERY, ETC.)

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ELECTRON EMITTER MANUFACTURE

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MANUFACTURE OF ELECTRICAL DEVICE CONTROLLED PRINTHEAD

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MAKING DEVICE OR CIRCUIT EMISSIVE OF NONELECTRICAL SIGNAL

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. (1 indent ) Having diverse electrical device

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.. (2 indent ) Including device responsive to nonelectrical signal

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... (3 indent ) Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor

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. (1 indent ) Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor

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.. (2 indent ) Having additional optical element (e.g., optical fiber, etc.)

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.. (2 indent ) Plural emissive devices

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. (1 indent ) Including integrally formed optical element (e.g., reflective layer, luminescent material, contoured surface, etc.)

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.. (2 indent ) Liquid crystal component

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.. (2 indent ) Optical waveguide structure

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.. (2 indent ) Optical grating structure

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. (1 indent ) Substrate dicing

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. (1 indent ) Making emissive array

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.. (2 indent ) Multiple wavelength emissive

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. (1 indent ) Ordered or disordered

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. (1 indent ) Graded composition

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. (1 indent ) Passivating of surface

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. (1 indent ) Mesa formation

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.. (2 indent ) Tapered etching

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.. (2 indent ) With epitaxial deposition of semiconductor adjacent mesa

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. (1 indent ) Groove formation

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.. (2 indent ) Tapered etching

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.. (2 indent ) With epitaxial deposition of semiconductor in groove

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. (1 indent ) Dopant introduction into semiconductor region

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. (1 indent ) Compound semiconductor

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.. (2 indent ) Heterojunction

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MAKING DEVICE OR CIRCUIT RESPONSIVE TO NONELECTRICAL SIGNAL

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. (1 indent ) Chemically responsive

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. (1 indent ) Physical stress responsive

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.. (2 indent ) Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor

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.. (2 indent ) Having cantilever element

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.. (2 indent ) Having diaphragm element

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. (1 indent ) Thermally responsive

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.. (2 indent ) Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor

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. (1 indent ) Responsive to corpuscular radiation (e.g., nuclear particle detector, etc.)

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. (1 indent ) Responsive to electromagnetic radiation

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.. (2 indent ) Gettering of substrate

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.. (2 indent ) Having diverse electrical device

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... (3 indent ) Charge transfer device (e.g., CCD, etc.)

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.. (2 indent ) Continuous processing

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... (3 indent ) Using running length substrate

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.. (2 indent ) Particulate semiconductor component

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.. (2 indent ) Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor

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... (3 indent ) Having additional optical element (e.g., optical fiber, etc.)

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... (3 indent ) Plural responsive devices (e.g., array, etc.)

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.... (4 indent ) Assembly of plural semiconductor substrates

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.. (2 indent ) Substrate dicing

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.. (2 indent ) Including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.)

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... (3 indent ) Color filter

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... (3 indent ) Specific surface topography (e.g., textured surface, etc.)

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... (3 indent ) Having reflective or antireflective component

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.. (2 indent ) Making electromagnetic responsive array

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... (3 indent ) Vertically arranged (e.g., tandem, stacked, etc.)

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... (3 indent ) Charge transfer device (e.g., CCD, etc.)

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.... (4 indent ) Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)

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.... (4 indent ) Compound semiconductor

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.... (4 indent ) Having structure to improve output signal (e.g., exposure control structure, etc.)

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....• (5 indent ) Having blooming suppression structure (e.g., antiblooming drain, etc.)

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... (3 indent ) Lateral series connected array

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.... (4 indent ) Specified shape junction barrier (e.g., V-grooved junction, etc.)

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.. (2 indent ) Having organic semiconductor component

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.. (2 indent ) Forming point contact

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.. (2 indent ) Having selenium or tellurium elemental semiconductor component

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.. (2 indent ) Having metal oxide or copper sulfide compound semiconductive component

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... (3 indent ) And cadmium sulfide compound semiconductive component

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.. (2 indent ) Graded composition

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.. (2 indent ) Direct application of electric current

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.. (2 indent ) Fusion or solidification of semiconductor region

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.. (2 indent ) Including storage of electrical charge in substrate

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.. (2 indent ) Avalanche diode

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.. (2 indent ) Schottky barrier junction

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.. (2 indent ) Compound semiconductor

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... (3 indent ) Heterojunction

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... (3 indent ) Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containing

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.. (2 indent ) Amorphous semiconductor

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.. (2 indent ) Polycrystalline semiconductor

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.. (2 indent ) Contact formation (i.e., metallization)

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HAVING ORGANIC SEMICONDUCTIVE COMPONENT

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MAKING POINT CONTACT DEVICE

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. (1 indent ) Direct application of electrical current

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HAVING SELENIUM OR TELLURIUM ELEMENTAL SEMICONDUCTOR COMPONENT

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. (1 indent ) Direct application of electrical current

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HAVING METAL OXIDE OR COPPER SULFIDE COMPOUND SEMICONDUCTOR COMPONENT

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HAVING DIAMOND SEMICONDUCTOR COMPONENT

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PACKAGING (E.G., WITH MOUNTING, ENCAPSULATING, ETC.) OR TREATMENT OF PACKAGED SEMICONDUCTOR

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. (1 indent ) Assembly of plural semiconductive substrates each possessing electrical device

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.. (2 indent ) Flip-chip-type assembly

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.. (2 indent ) Stacked array (e.g., rectifier, etc.)

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. (1 indent ) Making plural separate devices

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.. (2 indent ) Using strip lead frame

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... (3 indent ) And encapsulating

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.. (2 indent ) Substrate dicing

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... (3 indent ) Utilizing a coating to perfect the dicing

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. (1 indent ) Including contaminant removal or mitigation

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. (1 indent ) Having light transmissive window

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. (1 indent ) Incorporating resilient component (e.g., spring, etc.)

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. (1 indent ) Including adhesive bonding step

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.. (2 indent ) Electrically conductive adhesive

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. (1 indent ) With vibration step

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. (1 indent ) Metallic housing or support

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.. (2 indent ) Possessing thermal dissipation structure (i.e., heat sink)

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.. (2 indent ) Lead frame

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.. (2 indent ) And encapsulating

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. (1 indent ) Insulative housing or support

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.. (2 indent ) And encapsulating

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. (1 indent ) Encapsulating

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MAKING DEVICE ARRAY AND SELECTIVELY INTERCONNECTING

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. (1 indent ) With electrical circuit layout

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. (1 indent ) Rendering selected devices operable or inoperable

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. (1 indent ) Using structure alterable to conductive state (i.e., antifuse)

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. (1 indent ) Using structure alterable to nonconductive state (i.e., fuse)

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MAKING REGENERATIVE-TYPE SWITCHING DEVICE (E.G., SCR, IGBT, THYRISTOR, ETC.)

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. (1 indent ) Bidirectional rectifier with control electrode (e.g., triac, diac, etc.)

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. (1 indent ) Having field effect structure

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.. (2 indent ) Junction gate

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... (3 indent ) Vertical channel

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.. (2 indent ) Vertical channel

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. (1 indent ) Altering electrical characteristic

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. (1 indent ) Having structure increasing breakdown voltage (e.g., guard ring, field plate, etc.)

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MAKING CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR, ETC.)

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MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS

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. (1 indent ) Gettering of semiconductor substrate

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. (1 indent ) Charge transfer device (e.g., CCD, etc.)

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.. (2 indent ) Having additional electrical device

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.. (2 indent ) Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)

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.. (2 indent ) Changing width or direction of channel (e.g., meandering channel, etc.)

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.. (2 indent ) Substantially incomplete signal charge transfer (e.g., bucket brigade, etc.)

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. (1 indent ) On insulating substrate or layer (e.g., TFT, etc.)

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.. (2 indent ) Specified crystallographic orientation

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.. (2 indent ) Having insulated gate

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... (3 indent ) Combined with electrical device not on insulating substrate or layer

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.... (4 indent ) Complementary field effect transistors

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... (3 indent ) Complementary field effect transistors

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... (3 indent ) And additional electrical device on insulating substrate or layer

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... (3 indent ) Vertical channel

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... (3 indent ) Plural gate electrodes (e.g., dual gate, etc.)

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... (3 indent ) Inverted transistor structure

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.... (4 indent ) Source-to-gate or drain-to-gate overlap

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.... (4 indent ) Utilizing backside irradiation

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... (3 indent ) Including source or drain electrode formation prior to semiconductor layer formation (i.e., staggered electrodes)

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... (3 indent ) Introduction of nondopant into semiconductor layer

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... (3 indent ) Adjusting channel dimension (e.g., providing lightly doped source or drain region, etc.)

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... (3 indent ) Semiconductor islands formed upon insulating substrate or layer (e.g., mesa formation, etc.)

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.... (4 indent ) Including differential oxidation

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... (3 indent ) Including recrystallization step

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. (1 indent ) Having Schottky gate (e.g., MESFET, HEMT, etc.)

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.. (2 indent ) Specified crystallographic orientation

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.. (2 indent ) Complementary Schottky gate field effect transistors

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.. (2 indent ) And bipolar device

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.. (2 indent ) And passive electrical device (e.g., resistor, capacitor, etc.)

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.. (2 indent ) Having heterojunction (e.g., HEMT, MODFET, etc.)

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.. (2 indent ) Vertical channel

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.. (2 indent ) Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)

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.. (2 indent ) Buried channel

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.. (2 indent ) Plural gate electrodes (e.g., dual gate, etc.)

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.. (2 indent ) Closed or loop gate

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.. (2 indent ) Elemental semiconductor

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.. (2 indent ) Asymmetric

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.. (2 indent ) Self-aligned

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... (3 indent ) Doping of semiconductive region

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.... (4 indent ) T-gate

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.... (4 indent ) Dummy gate

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.... (4 indent ) Utilizing gate sidewall structure

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....• (5 indent ) Multiple doping steps

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. (1 indent ) Having junction gate (e.g., JFET, SIT, etc.)

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.. (2 indent ) Specified crystallographic orientation

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.. (2 indent ) Complementary junction gate field effect transistors

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.. (2 indent ) And bipolar transistor

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.. (2 indent ) And passive device (e.g., resistor, capacitor, etc.)

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.. (2 indent ) Having heterojunction

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.. (2 indent ) Vertical channel

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... (3 indent ) Multiple parallel current paths (e.g., grid gate, etc.)

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.. (2 indent ) Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)

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.. (2 indent ) Plural gate electrodes

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.. (2 indent ) Including isolation structure

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. (1 indent ) Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.)

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.. (2 indent ) Specified crystallographic orientation

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.. (2 indent ) Complementary insulated gate field effect transistors (i.e., CMOS)

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... (3 indent ) And additional electrical device

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.... (4 indent ) Including insulated gate field effect transistor having gate surrounded by dielectric (i.e., floating gate)

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.... (4 indent ) Including bipolar transistor (i.e., BiCMOS)

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....• (5 indent ) Complementary bipolar transistors

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....• (5 indent ) Lateral bipolar transistor

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....• (5 indent ) Plural bipolar transistors of differing electrical characteristics

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....• (5 indent ) Vertical channel insulated gate field effect transistor

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....• (5 indent ) Including isolation structure

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....•. (6 indent ) Isolation by PN junction only

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.... (4 indent ) Including additional vertical channel insulated gate field effect transistor

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.... (4 indent ) Including passive device (e.g., resistor, capacitor, etc.)

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... (3 indent ) Having gate surrounded by dielectric (i.e., floating gate)

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... (3 indent ) Vertical channel

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... (3 indent ) Common active region

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... (3 indent ) Having underpass or crossunder

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... (3 indent ) Having fuse or integral short

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... (3 indent ) Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound

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... (3 indent ) Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.)

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... (3 indent ) Including isolation structure

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.... (4 indent ) Total dielectric isolation

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.... (4 indent ) Isolation by PN junction only

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.... (4 indent ) Dielectric isolation formed by grooving and refilling with dielectric material

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....• (5 indent ) With epitaxial semiconductor layer formation

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....• (5 indent ) Having well structure of opposite conductivity type

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....•. (6 indent ) Plural wells

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.... (4 indent ) Recessed oxide formed by localized oxidation (i.e., LOCOS)

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....• (5 indent ) With epitaxial semiconductor layer formation

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....• (5 indent ) Having well structure of opposite conductivity type

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....•. (6 indent ) Plural wells

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... (3 indent ) Self-aligned

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.... (4 indent ) Utilizing gate sidewall structure

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....• (5 indent ) Plural doping steps

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.... (4 indent ) Plural doping steps

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... (3 indent ) And contact formation

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.. (2 indent ) Including bipolar transistor (i.e., BiMOS)

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... (3 indent ) Heterojunction bipolar transistor

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... (3 indent ) Lateral bipolar transistor

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.. (2 indent ) Including diode

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.. (2 indent ) Including passive device (e.g., resistor, capacitor, etc.)

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... (3 indent ) Capacitor

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.... (4 indent ) Having high dielectric constant insulator (e.g., Ta2O5, etc.)

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.... (4 indent ) And additional field effect transistor (e.g., sense or access transistor, etc.)

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....• (5 indent ) Including transistor formed on trench sidewalls

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.... (4 indent ) Trench capacitor

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....• (5 indent ) Utilizing stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)

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....• (5 indent ) With epitaxial layer formed over the trench

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....• (5 indent ) Including doping of trench surfaces

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....•. (6 indent ) Multiple doping steps

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....•. (6 indent ) Including isolation means formed in trench

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....•. (6 indent ) Doping by outdiffusion from a dopant source layer (e.g., doped oxide, etc.)

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.... (4 indent ) Planar capacitor

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....• (5 indent ) Including doping of semiconductive region

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....•. (6 indent ) Multiple doping steps

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.... (4 indent ) Stacked capacitor

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....• (5 indent ) Including selectively removing material to undercut and expose storage node layer

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....• (5 indent ) Including texturizing storage node layer

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....• (5 indent ) Contacts formed by selective growth or deposition

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.. (2 indent ) Having additional gate electrode surrounded by dielectric (i.e., floating gate)

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... (3 indent ) Including additional field effect transistor (e.g., sense or access transistor, etc.)

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... (3 indent ) Including forming gate electrode in trench or recess in substrate

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... (3 indent ) Textured surface of gate insulator or gate electrode

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... (3 indent ) Multiple interelectrode dielectrics or nonsilicon compound gate insulator

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... (3 indent ) Including elongated source or drain region disposed under thick oxide regions (e.g., buried or diffused bitline, etc.)

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.... (4 indent ) Tunneling insulator

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... (3 indent ) Tunneling insulator

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... (3 indent ) Oxidizing sidewall of gate electrode

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... (3 indent ) Having additional, nonmemory control electrode or channel portion (e.g., for accessing field effect transistor structure, etc.)

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.... (4 indent ) Including forming gate electrode as conductive sidewall spacer to another electrode

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.. (2 indent ) Vertical channel

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... (3 indent ) Utilizing epitaxial semiconductor layer grown through an opening in an insulating layer

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... (3 indent ) Gate electrode in trench or recess in semiconductor substrate

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.... (4 indent ) V-gate

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.... (4 indent ) Totally embedded in semiconductive layers

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... (3 indent ) Having integral short of source and base regions

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.... (4 indent ) Short formed in recess in substrate

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.. (2 indent ) Making plural insulated gate field effect transistors of differing electrical characteristics

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... (3 indent ) Introducing a dopant into the channel region of selected transistors

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.... (4 indent ) Including forming overlapping gate electrodes

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.... (4 indent ) After formation of source or drain regions and gate electrode (e.g., late programming, encoding, etc.)

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.. (2 indent ) Making plural insulated gate field effect transistors having common active region

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.. (2 indent ) Having underpass or crossunder

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.. (2 indent ) Having fuse or integral short

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.. (2 indent ) Buried channel

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.. (2 indent ) Plural gate electrodes (e.g., dual gate, etc.)

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.. (2 indent ) Closed or loop gate

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.. (2 indent ) Utilizing compound semiconductor

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.. (2 indent ) Asymmetric

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.. (2 indent ) Gate insulator structure constructed of diverse dielectrics (e.g., MNOS, etc.) or of nonsilicon compound

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.. (2 indent ) Having step of storing electrical charge in gate dielectric

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.. (2 indent ) Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.)

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... (3 indent ) After formation of source or drain regions and gate electrode

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... (3 indent ) Using channel conductivity dopant of opposite type as that of source and drain

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.. (2 indent ) Direct application of electrical current

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.. (2 indent ) Fusion or solidification of semiconductor region

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.. (2 indent ) Including isolation structure

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... (3 indent ) Total dielectric isolation

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... (3 indent ) Dielectric isolation formed by grooving and refilling with dielectric material

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... (3 indent ) Recessed oxide formed by localized oxidation (i.e., LOCOS)

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.... (4 indent ) Doping region beneath recessed oxide (e.g., to form chanstop, etc.)

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.. (2 indent ) Self-aligned

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... (3 indent ) Having elevated source or drain (e.g., epitaxially formed source or drain, etc.)

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... (3 indent ) Source or drain doping

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.... (4 indent ) Oblique implantation

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.... (4 indent ) Utilizing gate sidewall structure

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....• (5 indent ) Conductive sidewall component

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....• (5 indent ) Plural doping steps

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.... (4 indent ) Plural doping steps

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....• (5 indent ) Using same conductivity-type dopant

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.. (2 indent ) Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)

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FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS

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. (1 indent ) Gettering of semiconductor substrate

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. (1 indent ) On insulating substrate or layer (i.e., SOI type)

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. (1 indent ) Having heterojunction

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.. (2 indent ) Complementary bipolar transistors

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.. (2 indent ) And additional electrical device

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.. (2 indent ) Forming inverted transistor structure

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.. (2 indent ) Forming lateral transistor structure

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.. (2 indent ) Wide bandgap emitter

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.. (2 indent ) Including isolation structure

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... (3 indent ) Air isolation (e.g., mesa, etc.)

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.. (2 indent ) Self-aligned

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... (3 indent ) Utilizing dummy emitter

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. (1 indent ) Complementary bipolar transistors

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.. (2 indent ) Having common active region (i.e., integrated injection logic (I2L), etc.)

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... (3 indent ) Including additional electrical device

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... (3 indent ) Having lateral bipolar transistor

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.. (2 indent ) Including additional electrical device

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.. (2 indent ) Having lateral bipolar transistor

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. (1 indent ) Including diode

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. (1 indent ) Including passive device (e.g., resistor, capacitor, etc.)

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.. (2 indent ) Resistor

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... (3 indent ) Having same doping as emitter or collector

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... (3 indent ) Lightly doped junction isolated resistor

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. (1 indent ) Having fuse or integral short

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. (1 indent ) Forming inverted transistor structure

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. (1 indent ) Forming lateral transistor structure

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.. (2 indent ) Combined with vertical bipolar transistor

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.. (2 indent ) Active region formed along groove or exposed edge in semiconductor

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.. (2 indent ) Having multiple emitter or collector structure

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.. (2 indent ) Self-aligned

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. (1 indent ) Making plural bipolar transistors of differing electrical characteristics

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. (1 indent ) Using epitaxial lateral overgrowth

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. (1 indent ) Having multiple emitter or collector structure

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. (1 indent ) Mesa or stacked emitter

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. (1 indent ) Washed emitter

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. (1 indent ) Walled emitter

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. (1 indent ) Emitter dip prevention or utilization

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. (1 indent ) Permeable or metal base

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. (1 indent ) Sidewall base contact

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. (1 indent ) Pedestal base

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. (1 indent ) Forming base region of specified dopant concentration profile (e.g., inactive base region more heavily doped than active base region, etc.)

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. (1 indent ) Direct application of electrical current

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. (1 indent ) Fusion or solidification of semiconductor region

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. (1 indent ) Including isolation structure

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.. (2 indent ) Having semi-insulative region

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.. (2 indent ) Total dielectrical isolation

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.. (2 indent ) Isolation by PN junction only

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... (3 indent ) Including epitaxial semiconductor layer formation

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.... (4 indent ) Up diffusion of dopant from substrate into epitaxial layer

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.. (2 indent ) Dielectric isolation formed by grooving and refilling with dielectrical material

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... (3 indent ) With epitaxial semiconductor formation in groove

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... (3 indent ) Including deposition of polysilicon or noninsulative material into groove

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.. (2 indent ) Recessed oxide by localized oxidation (i.e., LOCOS)

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... (3 indent ) With epitaxial semiconductor layer formation

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. (1 indent ) Self-aligned

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.. (2 indent ) Forming active region from adjacent doped polycrystalline or amorphous semiconductor

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... (3 indent ) Having sidewall

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.... (4 indent ) Including conductive component

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... (3 indent ) Simultaneously outdiffusing plural dopants from polysilicon or amorphous semiconductor

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.. (2 indent ) Dopant implantation or diffusion

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... (3 indent ) Forming buried region (e.g., implanting through insulating layer, etc.)

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... (3 indent ) Simultaneous introduction of plural dopants

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.... (4 indent ) Plural doping steps

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....• (5 indent ) Multiple ion implantation steps

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....•. (6 indent ) Using same conductivity-type dopant

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....• (5 indent ) Forming partially overlapping regions

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....• (5 indent ) Single dopant forming regions of different depth or concentrations

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....• (5 indent ) Through same mask opening

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. (1 indent ) Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.)

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VOLTAGE VARIABLE CAPACITANCE DEVICE MANUFACTURE (E.G., VARACTOR, ETC.)

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AVALANCHE DIODE MANUFACTURE (E.G., IMPATT, TRAPPAT, ETC.)

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MAKING PASSIVE DEVICE (E.G., RESISTOR, CAPACITOR, ETC.)

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. (1 indent ) Resistor

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.. (2 indent ) Lightly doped junction isolated resistor

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.. (2 indent ) Deposited thin film resistor

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... (3 indent ) Altering resistivity of conductor

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. (1 indent ) Trench capacitor

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.. (2 indent ) Having stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.)

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.. (2 indent ) With epitaxial layer formed over the trench

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.. (2 indent ) Including doping of trench surfaces

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... (3 indent ) Multiple doping steps

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... (3 indent ) Including isolation means formed in trench

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... (3 indent ) Doping by outdiffusion from a dopant source layer (e.g., doped oxide)

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. (1 indent ) Planar capacitor

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.. (2 indent ) Including doping of semiconductive region

395

... (3 indent ) Multiple doping steps

396

. (1 indent ) Stacked capacitor

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.. (2 indent ) Including selectively removing material to undercut and expose storage node layer

398

.. (2 indent ) Including texturizing storage node layer

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.. (2 indent ) Having contacts formed by selective growth or deposition

400

FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE

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. (1 indent ) Having substrate registration feature (e.g., alignment mark)

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. (1 indent ) And gettering of substrate

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. (1 indent ) Having semi-insulating component

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. (1 indent ) Total dielectric isolation

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.. (2 indent ) And separate partially isolated semiconductor regions

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.. (2 indent ) Bonding of plural semiconductive substrates

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.. (2 indent ) Nondopant implantation

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.. (2 indent ) With electrolytic treatment step

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... (3 indent ) Porous semiconductor formation

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.. (2 indent ) Encroachment of separate locally oxidized regions

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.. (2 indent ) Air isolation (e.g., beam lead supported semiconductor islands, etc.)

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... (3 indent ) Semiconductor islands formed upon insulating substrate or layer (e.g., mesa isolation, etc.)

413

.. (2 indent ) With epitaxial semiconductor formation

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. (1 indent ) Isolation by PN junction only

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.. (2 indent ) Thermomigration

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.. (2 indent ) With epitaxial semiconductor formation

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... (3 indent ) And simultaneous polycrystalline growth

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... (3 indent ) Dopant addition

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.... (4 indent ) Plural doping steps

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.. (2 indent ) Plural doping steps

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. (1 indent ) Having air-gap dielectric (e.g., groove, etc.)

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.. (2 indent ) Enclosed cavity

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. (1 indent ) Implanting to form insulator

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. (1 indent ) Grooved and refilled with deposited dielectric material

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.. (2 indent ) Combined with formation of recessed oxide by localized oxidation

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... (3 indent ) Recessed oxide laterally extending from groove

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.. (2 indent ) Refilling multiple grooves of different widths or depths

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... (3 indent ) Reflow of insulator

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.. (2 indent ) And epitaxial semiconductor formation in groove

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.. (2 indent ) And deposition of polysilicon or noninsulative material into groove

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... (3 indent ) Oxidation of deposited material

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.... (4 indent ) Nonoxidized portions remaining in groove after oxidation

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.. (2 indent ) Dopant addition

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... (3 indent ) From doped insulator in groove

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.. (2 indent ) Multiple insulative layers in groove

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... (3 indent ) Reflow of insulator

437

... (3 indent ) Conformal insulator formation

438

.. (2 indent ) Reflow of insulator

439

. (1 indent ) Recessed oxide by localized oxidation (i.e., LOCOS)

440

.. (2 indent ) Including nondopant implantation

441

.. (2 indent ) With electrolytic treatment step

442

.. (2 indent ) With epitaxial semiconductor layer formation

443

.. (2 indent ) Etchback of recessed oxide

444

.. (2 indent ) Preliminary etching of groove

445

... (3 indent ) Masking of groove sidewall

446

.... (4 indent ) Polysilicon containing sidewall

447

.... (4 indent ) Dopant addition

448

.. (2 indent ) Utilizing oxidation mask having polysilicon component

449

.. (2 indent ) Dopant addition

450

... (3 indent ) Implanting through recessed oxide

451

... (3 indent ) Plural doping steps

452

.. (2 indent ) Plural oxidation steps to form recessed oxide

453

.. (2 indent ) And electrical conductor formation (i.e., metallization)

454

. (1 indent ) Field plate electrode

455

BONDING OF PLURAL SEMICONDUCTOR SUBSTRATES

456

. (1 indent ) Having enclosed cavity

457

. (1 indent ) Warping of semiconductor substrate

458

. (1 indent ) Subsequent separation into plural bodies (e.g., delaminating, dicing, etc.)

459

. (1 indent ) Thinning of semiconductor substrate

460

SEMICONDUCTOR SUBSTRATE DICING

461

. (1 indent ) Beam lead formation

462

. (1 indent ) Having specified scribe region structure (e.g., alignment mark, plural grooves, etc.)

463

. (1 indent ) By electromagnetic irradiation (e.g., electron, laser, etc.)

464

. (1 indent ) With attachment to temporary support or carrier

465

. (1 indent ) Having a perfecting coating

466

DIRECT APPLICATION OF ELECTRICAL CURRENT

467

. (1 indent ) To alter conductivity of fuse or antifuse element

468

. (1 indent ) Electromigration

469

. (1 indent ) Utilizing pulsed current

470

. (1 indent ) Fusion of semiconductor region

471

GETTERING OF SUBSTRATE

472

. (1 indent ) By vibrating or impacting

473

. (1 indent ) By implanting or irradiating

474

.. (2 indent ) Ionized radiation (e.g., corpuscular or plasma treatment, etc.)

475

... (3 indent ) Hydrogen plasma (i.e., hydrogenization)

476

. (1 indent ) By layers which are coated, contacted, or diffused

477

. (1 indent ) By vapor phase surface reaction

478

FORMATION OF SEMICONDUCTIVE ACTIVE REGION ON ANY SUBSTRATE (E.G., FLUID GROWTH, DEPOSITION)

479

. (1 indent ) On insulating substrate or layer

480

.. (2 indent ) Including implantation of ion which reacts with semiconductor substrate to form insulating layer

481

.. (2 indent ) Utilizing epitaxial lateral overgrowth

482

. (1 indent ) Amorphous semiconductor

483

.. (2 indent ) Compound semiconductor

484

.. (2 indent ) Running length (e.g., sheet, strip, etc.)

485

.. (2 indent ) Deposition utilizing plasma (e.g., glow discharge, etc.)

486

.. (2 indent ) And subsequent crystallization

487

... (3 indent ) Utilizing wave energy (e.g., laser, electron beam, etc.)

488

. (1 indent ) Polycrystalline semiconductor

489

.. (2 indent ) Simultaneous single crystal formation

490

.. (2 indent ) Running length (e.g., sheet, strip, etc.)

491

.. (2 indent ) And subsequent doping of polycrystalline semiconductor

492

. (1 indent ) Fluid growth step with preceding and subsequent diverse operation

493

. (1 indent ) Plural fluid growth steps with intervening diverse operation

494

.. (2 indent ) Differential etching

495

.. (2 indent ) Doping of semiconductor

496

.. (2 indent ) Coating of semiconductive substrate with nonsemiconductive material

497

. (1 indent ) Fluid growth from liquid combined with preceding diverse operation

498

.. (2 indent ) Differential etching

499

.. (2 indent ) Doping of semiconductor

500

. (1 indent ) Fluid growth from liquid combined with subsequent diverse operation

501

.. (2 indent ) Doping of semiconductor

502

.. (2 indent ) Heat treatment

503

. (1 indent ) Fluid growth from gaseous state combined with preceding diverse operation

504

.. (2 indent ) Differential etching

505

.. (2 indent ) Doping of semiconductor

506

... (3 indent ) Ion implantation

507

. (1 indent ) Fluid growth from gaseous state combined with subsequent diverse operation

508

.. (2 indent ) Doping of semiconductor

509

.. (2 indent ) Heat treatment

510

INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL

511

. (1 indent ) Ordering or disordering

512

. (1 indent ) Involving nuclear transmutation doping

513

. (1 indent ) Plasma (e.g., glow discharge, etc.)

514

. (1 indent ) Ion implantation of dopant into semiconductor region

515

.. (2 indent ) Ionized molecules

516

.. (2 indent ) Including charge neutralization

517

.. (2 indent ) Of semiconductor layer on insulating substrate or layer

518

.. (2 indent ) Of compound semiconductor

519

... (3 indent ) Including multiple implantation steps

520

.... (4 indent ) Providing nondopant ion (e.g., proton, etc.)

521

.... (4 indent ) Using same conductivity-type dopant

522

... (3 indent ) Including heat treatment

523

... (3 indent ) And contact formation (i.e., metallization)

524

.. (2 indent ) Into grooved semiconductor substrate region

525

.. (2 indent ) Using oblique beam

526

.. (2 indent ) Forming buried region

527

.. (2 indent ) Including multiple implantation steps

528

... (3 indent ) Providing nondopant ion (e.g., proton, etc.)

529

... (3 indent ) Using same conductivity-type dopant

530

.. (2 indent ) Including heat treatment

531

.. (2 indent ) Using shadow mask

532

.. (2 indent ) Into polycrystalline region

533

.. (2 indent ) And contact formation (i.e., metallization)

534

... (3 indent ) Rectifying contact (i.e., Schottky contact)

535

. (1 indent ) By application of corpuscular or electromagnetic radiation (e.g., electron, laser, etc.)

536

.. (2 indent ) Recoil implantation

537

. (1 indent ) Fusing dopant with substrate (i.e., alloy junction)

538

.. (2 indent ) Using additional material to improve wettability or flow characteristics (e.g., flux, etc.)

539

.. (2 indent ) Application of pressure to material during fusion

540

.. (2 indent ) Including plural controlled heating or cooling steps or nonuniform heating

541

... (3 indent ) Including diffusion after fusing step

542

. (1 indent ) Diffusing a dopant

543

.. (2 indent ) To control carrier lifetime (i.e., deep level dopant)

544

.. (2 indent ) To solid-state solubility concentration

545

.. (2 indent ) Forming partially overlapping regions

546

.. (2 indent ) Plural dopants in same region (e.g., through same mask opening, etc.)

547

... (3 indent ) Simultaneously

548

.. (2 indent ) Plural dopants simultaneously in plural regions

549

.. (2 indent ) Single dopant forming plural diverse regions (e.g., forming regions of different concentrations or of different depths, etc.)

550

.. (2 indent ) Nonuniform heating

551

.. (2 indent ) Using multiple layered mask

552

... (3 indent ) Having plural predetermined openings in master mask

553

.. (2 indent ) Using metal mask

554

.. (2 indent ) Outwardly

555

.. (2 indent ) Laterally under mask opening

556

.. (2 indent ) Edge diffusion by using edge portion of structure other than masking layer to mask

557

.. (2 indent ) From melt

558

.. (2 indent ) From solid dopant source in contact with semiconductor region

559

... (3 indent ) Using capping layer over dopant source to prevent out-diffusion of dopant

560

... (3 indent ) Plural diffusion stages

561

... (3 indent ) Dopant source within trench or groove

562

... (3 indent ) Organic source

563

... (3 indent ) Glassy source or doped oxide

564

... (3 indent ) Polycrystalline semiconductor source

565

.. (2 indent ) From vapor phase

566

... (3 indent ) Plural diffusion stages

567

... (3 indent ) Solid source in operative relation with semiconductor region

568

.... (4 indent ) In capsule-type enclosure

569

... (3 indent ) Into compound semiconductor region

570

FORMING SCHOTTKY JUNCTION (I.E., SEMICONDUCTOR-CONDUCTOR RECTIFYING JUNCTION CONTACT)

571

. (1 indent ) Combined with formation of ohmic contact to semiconductor region

572

. (1 indent ) Compound semiconductor

573

.. (2 indent ) Multilayer electrode

574

... (3 indent ) T-shaped electrode

575

... (3 indent ) Using platinum group metal (i.e., platinum (Pt), palladium (Pd), rodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)

576

.. (2 indent ) Into grooved or recessed semiconductor region

577

... (3 indent ) Utilizing lift-off

578

... (3 indent ) Forming electrode of specified shape (e.g., slanted, etc.)

579

.... (4 indent ) T-shaped electrode

580

. (1 indent ) Using platinum group metal (i.e., platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)

581

.. (2 indent ) Silicide

582

. (1 indent ) Using refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)

583

.. (2 indent ) Silicide

584

COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL

585

. (1 indent ) Insulated gate formation

586

.. (2 indent ) Combined with formation of ohmic contact to semiconductor region

587

.. (2 indent ) Forming array of gate electrodes

588

... (3 indent ) Plural gate levels

589

.. (2 indent ) Recessed into semiconductor substrate

590

.. (2 indent ) Compound semiconductor

591

.. (2 indent ) Gate insulator structure constructed of plural layers or nonsilicon containing compound

592

.. (2 indent ) Possessing plural conductive layers (e.g., polycide)

593

... (3 indent ) Separated by insulator (i.e., floating gate)

594

.... (4 indent ) Tunnelling dielectric layer

595

.. (2 indent ) Having sidewall structure

596

... (3 indent ) Portion of sidewall structure is conductive

597

. (1 indent ) To form ohmic contact to semiconductive material

598

.. (2 indent ) Selectively interconnecting (e.g., customization, wafer scale integration, etc.)

599

... (3 indent ) With electrical circuit layout

600

... (3 indent ) Using structure alterable to conductive state (i.e., antifuse)

601

... (3 indent ) Using structure alterable to nonconductive state (i.e., fuse)

602

.. (2 indent ) To compound semiconductor

603

... (3 indent ) II-VI compound semiconductor

604

... (3 indent ) III-V compound semiconductor

605

.... (4 indent ) Multilayer electrode

606

.... (4 indent ) Ga and As containing semiconductor

607

.. (2 indent ) With epitaxial conductor formation

608

.. (2 indent ) Oxidic conductor (e.g., indium tin oxide, etc.)

609

... (3 indent ) Transparent conductor

610

.. (2 indent ) Conductive macromolecular conductor (including metal powder filled composition)

611

.. (2 indent ) Beam lead formation

612

.. (2 indent ) Forming solder contact or bonding pad

613

... (3 indent ) Bump electrode

614

.... (4 indent ) Plural conductive layers

615

.... (4 indent ) Including fusion of conductor

616

....• (5 indent ) By transcription from auxiliary substrate

617

....• (5 indent ) By wire bonding

618

.. (2 indent ) Contacting multiple semiconductive regions (i.e., interconnects)

619

... (3 indent ) Air bridge structure

620

... (3 indent ) Forming contacts of differing depths into semiconductor substrate

621

... (3 indent ) Contacting diversely doped semiconductive regions (e.g., p-type and n-type regions, etc.)

622

... (3 indent ) Multiple metal levels, separated by insulating layer (i.e., multiple level metallization)

623

.... (4 indent ) Including organic insulating material between metal levels

624

.... (4 indent ) Separating insulating layer is laminate or composite of plural insulating materials

625

.... (4 indent ) At least one metallization level formed of diverse conductive layers

626

....• (5 indent ) Planarization

627

....• (5 indent ) At least one layer forms a diffusion barrier

628

....• (5 indent ) Having adhesion promoting layer

629

....• (5 indent ) Diverse conductive layers limited to viahole/plug

630

....•. (6 indent ) Silicide formation

631

.... (4 indent ) Having planarization step

632

....• (5 indent ) Utilizing reflow

633

....• (5 indent ) Simultaneously by chemical and mechanical means

634

....• (5 indent ) Utilizing etch-stop layer

635

.... (4 indent ) Insulator formed by reaction with conductor (e.g., oxidation, etc.)

636

.... (4 indent ) Including use of antireflective layer

637

.... (4 indent ) With formation of opening (i.e., viahole) in insulative layer

638

....• (5 indent ) Having viaholes of diverse width

639

....• (5 indent ) Having viahole with sidewall component

640

....• (5 indent ) Having viahole of tapered shape

641

.... (4 indent ) Selective deposition

642

... (3 indent ) Diverse conductors

643

.... (4 indent ) At least one layer forms a diffusion barrier

644

.... (4 indent ) Having adhesion promoting layer

645

.... (4 indent ) Having planarization step

646

....• (5 indent ) Utilizing reflow

647

.... (4 indent ) Having electrically conductive polysilicon component

648

.... (4 indent ) Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)

649

....• (5 indent ) Silicide

650

.... (4 indent ) Having noble group metal (i.e., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)

651

....• (5 indent ) Silicide

652

.. (2 indent ) Plural layered electrode or conductor

653

... (3 indent ) At least one layer forms a diffusion barrier

654

... (3 indent ) Having adhesion promoting layer

655

... (3 indent ) Silicide

656

... (3 indent ) Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)

657

... (3 indent ) Having electrically conductive polysilicon component

658

.. (2 indent ) Altering composition of conductor

659

... (3 indent ) Implantation of ion into conductor

660

.. (2 indent ) Including heat treatment of conductive layer

661

... (3 indent ) Subsequent fusing conductive layer

662

.... (4 indent ) Utilizing laser

663

... (3 indent ) Rapid thermal anneal

664

.... (4 indent ) Forming silicide

665

.. (2 indent ) Utilizing textured surface

666

.. (2 indent ) Specified configuration of electrode or contact

667

... (3 indent ) Conductive feedthrough or through-hole in substrate

668

... (3 indent ) Specified aspect ratio of conductor or viahole

669

.. (2 indent ) And patterning of conductive layer

670

... (3 indent ) Utilizing lift-off

671

... (3 indent ) Utilizing multilayered mask

672

... (3 indent ) Plug formation (i.e., in viahole)

673

... (3 indent ) Tapered etching

674

.. (2 indent ) Selective deposition of conductive layer

675

... (3 indent ) Plug formation (i.e., in viahole)

676

... (3 indent ) Utilizing electromagnetic or wave energy

677

... (3 indent ) Pretreatment of surface to enhance or retard deposition

678

.. (2 indent ) Electroless deposition of conductive layer

679

.. (2 indent ) Evaporative coating of conductive layer

680

.. (2 indent ) Utilizing chemical vapor deposition (i.e., CVD)

681

... (3 indent ) Of organo-metallic precursor (i.e., MOCVD)

682

.. (2 indent ) Silicide

683

... (3 indent ) Of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)

684

.. (2 indent ) Electrically conductive polysilicon

685

.. (2 indent ) Refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)

686

.. (2 indent ) Noble group metal (i.e., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)

687

.. (2 indent ) Copper of copper alloy conductor

688

.. (2 indent ) Aluminum or aluminum alloy conductor

689

CHEMICAL ETCHING

690

. (1 indent ) Combined with the removal of material by nonchemical means (e.g., ablating, abrading, etc.)

691

.. (2 indent ) Combined mechanical and chemical material removal

692

... (3 indent ) Simultaneous (e.g., chemical-mechanical polishing, etc.)

693

.... (4 indent ) Utilizing particulate abradant

694

. (1 indent ) Combined with coating step

695

.. (2 indent ) Simultaneous etching and coating

696

.. (2 indent ) Coating of sidewall

697

.. (2 indent ) Planarization by etching and coating

698

... (3 indent ) Utilizing reflow

699

... (3 indent ) Plural coating steps

700

.. (2 indent ) Formation of groove or trench

701

... (3 indent ) Tapered configuration

702

... (3 indent ) Plural coating steps

703

.. (2 indent ) Plural coating steps

704

. (1 indent ) Having liquid and vapor etching steps

705

. (1 indent ) Altering etchability of substrate region by compositional or crystalline modification

706

. (1 indent ) Vapor phase etching (i.e., dry etching)

707

.. (2 indent ) Utilizing electromagnetic or wave energy

708

... (3 indent ) Photo-induced etching

709

.... (4 indent ) Photo-induced plasma etching

710

... (3 indent ) By creating electric field (e.g., plasma, glow discharge, etc.)

711

.... (4 indent ) Utilizing multiple gas energizing means

712

.... (4 indent ) Reactive ion beam etching (i.e., RIBE)

713

.... (4 indent ) Forming tapered profile (e.g., tapered etching, etc.)

714

.... (4 indent ) Including change in etch influencing parameter (e.g., energizing power, etchant composition, temperature, etc.)

715

.... (4 indent ) With substrate heating or cooling

716

.... (4 indent ) With substrate handling (e.g., conveying, etc.)

717

.... (4 indent ) Utilizing multilayered mask

718

.... (4 indent ) Compound semiconductor

719

.... (4 indent ) Silicon

720

.... (4 indent ) Electrically conductive material (e.g., metal, conductive oxide, etc.)

721

....• (5 indent ) Silicide

722

.... (4 indent ) Metal oxide

723

.... (4 indent ) Silicon oxide or glass

724

.... (4 indent ) Silicon nitride

725

.... (4 indent ) Organic material (e.g., resist, etc.)

726

.... (4 indent ) Having microwave gas energizing

727

....• (5 indent ) Producing energized gas remotely located from substrate

728

....•. (6 indent ) Using magnet (e.g., electron cyclotron resonance, etc.)

729

.... (4 indent ) Using specified electrode/susceptor configuration (e.g., of multiple substrates using barrel-type susceptor, planar reactor configuration, etc.) to generate plasma

730

....• (5 indent ) Producing energized gas remotely located from substrate

731

....•. (6 indent ) Using intervening shield structure

732

.... (4 indent ) Using magnet (e.g., electron cyclotron resonance, etc.)

733

... (3 indent ) Using or orientation dependent etchant (i.e., anisotropic etchant)

734

.. (2 indent ) Sequential etching steps on a single layer

735

.. (2 indent ) Differential etching of semiconductor substrate

736

... (3 indent ) Utilizing multilayered mask

737

... (3 indent ) Substrate possessing multiple layers

738

.... (4 indent ) Selectively etching substrate possessing multiple layers of differing etch characteristics

739

....• (5 indent ) Lateral etching of intermediate layer (i.e., undercutting)

740

....• (5 indent ) Utilizing etch stop layer

741

....•. (6 indent ) PN junction functions as etch stop

742

.... (4 indent ) Electrically conductive material (e.g., metal, conductive oxide, etc.)

743

.... (4 indent ) Silicon oxide or glass

744

.... (4 indent ) Silicon nitride

745

. (1 indent ) Liquid phase etching

746

.. (2 indent ) Utilizing electromagnetic or wave energy

747

.. (2 indent ) With relative movement between substrate and confined pool of etchant

748

.. (2 indent ) Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant

749

.. (2 indent ) Sequential application of etchant

750

... (3 indent ) To same side of substrate

751

.... (4 indent ) Each etch step exposes surface of an adjacent layer

752

.. (2 indent ) Germanium

753

.. (2 indent ) Silicon

754

.. (2 indent ) Electrically conductive material (e.g., metal, conductive oxide, etc.)

755

... (3 indent ) Silicide

756

.. (2 indent ) Silicon oxide

757

.. (2 indent ) Silicon nitride

758

COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE

759

. (1 indent ) Combined with the removal of material by nonchemical means

760

. (1 indent ) Utilizing reflow (e.g., planarization, etc.)

761

. (1 indent ) Multiple layers

762

.. (2 indent ) At least one layer formed by reaction with substrate

763

.. (2 indent ) Layers formed of diverse composition or by diverse coating processes

764

. (1 indent ) Formation of semi-insulative polycrystalline silicon

765

. (1 indent ) By reaction with substrate

766

.. (2 indent ) Implantation of ion (e.g., to form ion amorphousized region prior to selective oxidation, reacting with substrate to form insulative region, etc.)

767

.. (2 indent ) Compound semiconductor substrate

768

.. (2 indent ) Reaction with conductive region

769

.. (2 indent ) Reaction with silicon semiconductive region (e.g., oxynitride formation, etc.)

770

... (3 indent ) Oxidation

771

.... (4 indent ) Using electromagnetic or wave energy

772

....• (5 indent ) Microwave gas energizing

773

.... (4 indent ) In atmosphere containing water vapor (i.e., wet oxidation)

774

.... (4 indent ) In atmosphere containing halogen

775

... (3 indent ) Nitridation

776

.... (4 indent ) Using electromagnetic or wave energy

777

....• (5 indent ) Microwave gas energizing

778

. (1 indent ) Insulative material deposited upon semiconductive substrate

779

.. (2 indent ) Compound semiconductor substrate

780

.. (2 indent ) Depositing organic material (e.g., polymer, etc.)

781

... (3 indent ) Subsequent heating modifying organic coating composition

782

.. (2 indent ) With substrate handling during coating (e.g., immersion, spinning, etc.)

783

.. (2 indent ) Insulative material having impurity (e.g., for altering physical characteristics, etc.)

784

... (3 indent ) Introduction simultaneous with deposition

785

.. (2 indent ) Insulative material is compound of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)

786

.. (2 indent ) Tertiary silicon containing compound formation (e.g., oxynitride formation, etc.)

787

.. (2 indent ) Silicon oxide formation

788

... (3 indent ) Using electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)

789

.... (4 indent ) Organic reactant

790

... (3 indent ) Organic reactant

791

.. (2 indent ) Silicon nitride formation

792

... (3 indent ) Utilizing electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.)

793

.... (4 indent ) Organic reactant

794

... (3 indent ) Organic reactant

795

RADIATION OR ENERGY TREATMENT MODIFYING PROPERTIES OF SEMICONDUCTOR REGION OF SUBSTRATE (E.G., THERMAL, CORPUSCULAR, ELECTROMAGNETIC, ETC.)

796

. (1 indent ) Compound semiconductor

797

.. (2 indent ) Ordering or disordering

798

. (1 indent ) Ionized irradiation (e.g., corpuscular or plasma treatment, etc.)

799

. (1 indent ) By differential heating

800

MISCELLANEOUS

	CROSS-REFERENCE ART COLLECTIONS

900

BULK EFFECT DEVICE MAKING

901

CAPACITIVE JUNCTION

902

CAPPING LAYER

903

CATALYST AIDED DEPOSITION

904

CHARGE CARRIER LIFETIME CONTROL

905

CLEANING OF REACTION CHAMBER

906

CLEANING OF WAFER AS INTERIM STEP

907

CONTINUOUS PROCESSING

908

. (1 indent ) Utilizing cluster apparatus

909

CONTROLLED ATMOSPHERE

910

CONTROLLING CHARGING STATE AT SEMICONDUCTOR-INSULATOR INTERFACE

911

DIFFERENTIAL OXIDATION AND ETCHING

912

DISPLACING PN JUNCTION

913

DIVERSE TREATMENTS PERFORMED IN UNITARY CHAMBER

914

DOPING

915

. (1 indent ) Amphoteric doping

916

. (1 indent ) Autodoping control or utilization

917

. (1 indent ) Deep level dopants (e.g., gold (Au), chromium (Cr), iron (Fe), nickel (Ni), etc.)

918

. (1 indent ) Special or nonstandard dopant

919

. (1 indent ) Compensation doping

920

. (1 indent ) Controlling diffusion profile by oxidation

921

. (1 indent ) Nonselective diffusion

922

. (1 indent ) Diffusion along grain boundaries

923

. (1 indent ) Diffusion through a layer

924

. (1 indent ) To facilitate selective etching

925

. (1 indent ) Fluid growth doping control (e.g., delta doping, etc.)

926

DUMMY METALLIZATION

927

ELECTROMIGRATION RESISTANT METALLIZATION

928

FRONT AND REAR SURFACE PROCESSING

929

EUTECTIC SEMICONDUCTOR

930

TERNARY OR QUATERNARY SEMICONDUCTOR COMPRISED OF ELEMENTS FROM THREE DIFFERENT GROUPS (E.G., I-III-V, ETC.)

931

SILICON CARBIDE SEMICONDUCTOR

932

BORON NITRIDE SEMICONDUCTOR

933

GERMANIUM OR SILICON OR GE-SI ON III-V

934

SHEET RESISTANCE (I.E., DOPANT PARAMETERS)

935

GAS FLOW CONTROL

936

GRADED ENERGY GAP

937

HILLOCK PREVENTION

938

LATTICE STRAIN CONTROL OR UTILIZATION

939

LANGMUIR-BLODGETT FILM UTILIZATION

940

LASER ABLATIVE MATERIAL REMOVAL

941

LOADING EFFECT MITIGATION

942

MASKING

943

. (1 indent ) Movable

944

. (1 indent ) Shadow

945

. (1 indent ) Special (e.g., metal, etc.)

946

. (1 indent ) Step and repeat

947

. (1 indent ) Subphotolithographic processing

948

. (1 indent ) Radiation resist

949

.. (2 indent ) Energy beam treating radiation resist on semiconductor

950

.. (2 indent ) Multilayer mask including nonradiation sensitive layer

951

.. (2 indent ) Lift-off

952

.. (2 indent ) Utilizing antireflective layer

953

MAKING RADIATION RESISTANT DEVICE

954

MAKING OXIDE-NITRIDE-OXIDE DEVICE

955

MELT-BACK

956

MAKING MULTIPLE WAVELENGTH EMISSIVE DEVICE

957

MAKING METAL-INSULATOR-METAL DEVICE

958

PASSIVATION LAYER

959

MECHANICAL POLISHING OF WAFER

960

POROUS SEMICONDUCTOR

961

ION BEAM SOURCE AND GENERATION

962

QUANTUM DOTS AND LINES

963

REMOVING PROCESS RESIDUES FROM VERTICAL SUBSTRATE SURFACES

964

ROUGHENED SURFACE

965

SHAPED JUNCTION FORMATION

966

SELECTIVE OXIDATION OF ION-AMORPHOUSIZED LAYER

967

SEMICONDUCTOR ON SPECIFIED INSULATOR

968

SEMICONDUCTOR-METAL-SEMICONDUCTOR

969

SIMULTANEOUS FORMATION OF MONOCRYSTALLINE AND POLYCRYSTALLINE REGIONS

970

SPECIFIED ETCH STOP MATERIAL

971

STOICHIOMETRIC CONTROL OF HOST SUBSTRATE COMPOSITION

972

STORED CHARGE ERASURE

973

SUBSTRATE ORIENTATION

974

SUBSTRATE SURFACE PREPARATION

975

SUBSTRATE OR MASK ALIGNING FEATURE

976

TEMPORARY PROTECTIVE LAYER

977

THINNING OR REMOVAL OF SUBSTRATE

978

FORMING TAPERED EDGES ON SUBSTRATE OR ADJACENT LAYERS

979

TUNNEL DIODES

980

UTILIZING PROCESS EQUIVALENTS OR OPTIONS

981

UTILIZING VARYING DIELECTRIC THICKNESS

982

VARYING ORIENTATION OF DEVICES IN ARRAY

983

ZENER DIODES

	FOREIGN ART COLLECTIONS

FOR000

CLASS-RELATED FOREIGN DOCUMENTS

Any foreign patents or non-patent literature from subclasses that have been reclassified have been transferred directly to FOR Collections listed below. These Collections contain ONLY foreign patents or non-patent literature. The parenthetical references in the Collection titles refer to the abolished subclasses from which these Collections were derived.

METHODS (156/1)

FOR100

. (1 indent ) Etching of semiconductor precursor, substrates, and devices used in an electrical function (156/625.1)

FOR101

.. (2 indent ) Measuring, testing, or inspecting (156/626.1)

FOR102

... (3 indent ) By electrical means or of electrical property (156/627.1)

FOR103

.. (2 indent ) Altering the etchability of a substrate by alloying, diffusing, or chemical reacting (156/628.1)

FOR104

.. (2 indent ) With uniting of preforms (e.g., laminating, etc.) (156/629.1)

FOR105

... (3 indent ) Prior to etching (156/630.1)

FOR106

.... (4 indent ) Delamination subsequent to etching (156/631.1)

FOR107

.... (4 indent ) With coating (156/632.1)

FOR108

... (3 indent ) Differential etching (156/633.1)

FOR109

.... (4 indent ) Metal layer etched (156/634.1)

FOR110

.. (2 indent ) With in situ activation or combining of etching components on surface (156/635.1)

FOR111

.. (2 indent ) With thin film of etchant between relatively moving substrate and conforming surface (e.g., chemical lapping, etc.) (156/636.1)

FOR112

.. (2 indent ) With relative movement between the substrate and a confined pool of etchant (156/637.1)

FOR113

... (3 indent ) With removal of adhered reaction product from substrate (156/638.1)

FOR114

... (3 indent ) With substrate rotation, repeated dipping, or advanced movement (156/639.1)

FOR115

.. (2 indent ) Projection of etchant against a moving substrate or controlling the angle or pattern of projected etchant (156/640.1)

FOR116

.. (2 indent ) Recycling or regenerating etchant (156/642.1)

FOR117

.. (2 indent ) With treatment by high energy radiation or plasma (e.g., ion beam, etc.) (156/643.1)

FOR118

.. (2 indent ) Forming or increasing the size of an aperture (156/644.1)

FOR119

.. (2 indent ) With mechanical deformation, severing, or abrading of a substrate (156/ 645.1)

FOR120

.. (2 indent ) Etchant is a gas (156/646.1)

FOR121

.. (2 indent ) Etching according to crystalline planes (156/647.1)

FOR122

.. (2 indent ) Etching isolates or modifies a junction in a barrier layer (156/648.1)

FOR123

... (3 indent ) Discrete junction isolated (e.g., mesa formation, etc.) (156/649.1)

FOR124

.. (2 indent ) Sequential application of etchant material (156/650.1)

FOR125

... (3 indent ) Sequentially etching the same surface of a substrate (156/651.1)

FOR126

.... (4 indent ) Each etching exposes surface of an adjacent layer (156/652.1)

FOR127

....• (5 indent ) Etched layer contains silicon (e.g., oxide, nitride, etc.) (156/653.1)

FOR128

.. (2 indent ) Differential etching of a substrate (156/654.1)

FOR129

... (3 indent ) Composite substrate (156/655.1)

FOR130

.... (4 indent ) Substrate contains metallic element or compound (156/656.1)

FOR131

.... (4 indent ) Substrate contains silicon or silicon compound (156/657.1)

FOR132

... (3 indent ) Resist coating (156/659.11)

FOR133

.... (4 indent ) Plural resist coating (156/661.11)

FOR134

.. (2 indent ) Silicon, germanium, or gallium containing substrate (156/662.1)

FOR135

MAKING DEVICE HAVING ORGANIC SEMICONDUCTOR COMPONENT (437/1)

FOR136

MAKING DEVICE RESPONSIVE TO RADIATION (437/2)

FOR137

. (1 indent ) Radiation detectors, e.g., infrared, etc. (437/3)

FOR138

. (1 indent ) Composed of polycrystalline material (437/4)

FOR139

. (1 indent ) Having semiconductor compound (437/5)

FOR140

MAKING THYRISTOR, E.G., DIAC, TRIAC, ETC. (437/6)

FOR141

INCLUDING CONTROL RESPONSIVE TO SENSED CONDITION (437/7)

FOR142

INCLUDING TESTING OR MEASURING (437/8)

FOR143

INCLUDING APPLICATION OF VIBRATORY FORCE (437/9)

FOR144

INCLUDING GETTERING (437/10)

FOR145

. (1 indent ) By ion implanting or irradiating (437/11)

FOR146

. (1 indent ) By layers which are coated, contacted, or diffused (437/12)

FOR147

. (1 indent ) By vapor phase surface reaction (437/13)

FOR148

THERMOMIGRATION (437/14)

FOR149

INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15)

FOR150

. (1 indent ) Using energy beam to introduce dopant or modify dopant distribution (437/ 16)

FOR151

.. (2 indent ) Neutron, gamma ray or electron beam (437/17)

FOR152

.. (2 indent ) Ionized molecules (437/18)

FOR153

.. (2 indent ) Coherent light beam (437/19)

FOR154

.. (2 indent ) Ion beam implantation (437/20)

FOR155

.. (2 indent ) Of semiconductor on insulating substrate (437/21)

FOR156

... (3 indent ) Of semiconductor compound (437/22)

FOR157

.... (4 indent ) Light emitting diode (LED) (437/23)

FOR158

... (3 indent ) Providing nondopant ion including proton (437/24)

FOR159

... (3 indent ) Providing auxiliary heating (437/25)

FOR160

... (3 indent ) Forming buried region (437/26)

FOR161

... (3 indent ) Including multiple implantations of same region (437/27)

FOR162

.... (4 indent ) Through insulating layer (437/28)

FOR163

....• (5 indent ) Forming field effect transistor (FET) type device (437/29)

FOR164

.... (4 indent ) Using same conductivity type dopant (437/30)

FOR165

.... (4 indent ) Forming bipolar transistor (NPN/PNP) (437/31)

FOR166

....• (5 indent ) Lateral bipolar transistor (437/32)

FOR167

....• (5 indent ) Having dielectric isolation (437/33)

FOR168

.... (4 indent ) Forming complementary MOS (metal oxide semiconductor) (437/34)

FOR169

... (3 indent ) Using oblique beam (437/35)

FOR170

... (3 indent ) Using shadow mask (437/36)

FOR171

... (3 indent ) Having projected range less than thickness of dielectrics on substrate (437/37)

FOR172

... (3 indent ) Into shaped or grooved semiconductor substrate (437/38)

FOR173

... (3 indent ) Involving Schottky contact formation (437/39)

FOR202

.... (4 indent ) Gate structure constructed of diverse dielectrics (437/42)

FOR203

....• (5 indent ) Gate surrounded by dielectric layer, e.g., floating gate, etc. (437/43)

FOR204

....• (5 indent ) Adjusting channel dimension (437/44)

FOR205

....• (5 indent ) Active step for controlling threshold voltage (437/45)

FOR185

....• (5 indent ) Self-aligned (437/41 R)

FOR186

....• (5 indent ) With bipolar (437/41 RBP)

FOR187

....• (5 indent ) CMOS (437/41 RCM)

FOR188

....• (5 indent ) Lightly doped drain (437/41 RLD)

FOR189

....• (5 indent ) Memory devices (437/41 RMM)

FOR190

....• (5 indent ) Asymmetrical FET (437/41 AS)

FOR191

....• (5 indent ) Channel specifics (437/41 CS)

FOR192

....• (5 indent ) DMOS/vertical FET (437/41 DM)

FOR193

....• (5 indent ) Gate specifics (437/41 GS)

FOR194

....• (5 indent ) Junction FET/static induction transistor (437/41 JF)

FOR195

....• (5 indent ) Layered channel (437/41 LC)

FOR196

....• (5 indent ) Specifics of metallization/contact (437/41 SM)

FOR197

....• (5 indent ) Recessed gate (Schottky falls below in SH) (437/41 RG)

FOR198

....• (5 indent ) Schottky gate/MESFET (437/41 SH)

FOR199

....• (5 indent ) Sidewall (437/41 SW)

FOR200

....• (5 indent ) Thin film transistor, inverted (437/41 TFI)

FOR201

....• (5 indent ) Thin film transistor (437/41 TFT)

FOR174

.... (4 indent ) Forming pair of device regions separated by gate structure, i.e., FET (437/40 R)

FOR175

.... (4 indent ) Asymmetrical FET (any asymmetry in S/D profile, gate spacing, etc.) (437/40 AS)

FOR176

.... (4 indent ) DMOS/vertical FET (437/40 DM)

FOR177

.... (4 indent ) Gate specific (specifics of gate insulator/structure/material/ contact) (437/40 GS)

FOR178

.... (4 indent ) Junction FET/static induction transistor (437/40 JF)

FOR179

.... (4 indent ) Layered channel (e.g., HEMT, MODFET, 2DEG, heterostructure FETS) (437/40 LC)

FOR180

.... (4 indent ) Recessed gate (437/40 RG)

FOR181

.... (4 indent ) Schottky gate/MESFET (controls over RG) (437/40 SH)

FOR182

.... (4 indent ) Sidewall (not LDD`s) (437/40 SW)

FOR183

.... (4 indent ) Thin film transistor inverted/staggered (437/40 TFI)

FOR184

.... (4 indent ) Thin film transistor (437/40 TFT)

FOR206

... (3 indent ) Into polycrystalline or polyamorphous regions (437/46)

FOR207

... (3 indent ) Integrating active with passive devices (437/47)

FOR208

... (3 indent ) Forming plural active devices in grid/array, e.g., RAMS/ROMS, etc. (437/48)

FOR209

.... (4 indent ) Having multiple-level electrodes (437/49)

FOR210

... (3 indent ) Forming electrodes in laterally spaced relationships (437/50)

FOR211

. (1 indent ) Making assemblies of plural individual devices having community feature, e.g., integrated circuit, electrical connection, etc. (437/51)

FOR212

.. (2 indent ) Memory devices (437/52)

FOR213

.. (2 indent ) Charge coupled devices (CCD) (437/53)

FOR214

.. (2 indent ) Diverse types (437/54)

FOR215

... (3 indent ) Integrated injection logic (I2L) circuits (437/55)

FOR216

... (3 indent ) Plural field effect transistors (CMOS) (437/56)

FOR217

.... (4 indent ) Complementary metal oxide having diverse conductivity source and drain regions (437/57)

FOR218

.... (4 indent ) Having like conductivity source and drain regions (437/58)

FOR219

... (3 indent ) Including field effect transistor (437/59)

FOR220

... (3 indent ) Including passive device (437/60)

FOR221

. (1 indent ) Including isolation step (437/61)

FOR222

.. (2 indent ) By forming total dielectric isolation (437/62)

FOR223

.. (2 indent ) By forming vertical isolation combining dielectric and PN junction (437/63)

FOR224

.. (2 indent ) Using vertical dielectric (air-gap/insulator) and horizontal PN junction (437/64)

FOR225

... (3 indent ) Grooved air-gap only (437/65)

FOR226

.... (4 indent ) V-groove (437/66)

FOR227

... (3 indent ) Grooved and refilled with insulator (437/67)

FOR228

.... (4 indent ) V-groove (437/68)

FOR229

... (3 indent ) Recessed oxide by localized oxidation (437/69)

FOR230

.... (4 indent ) Preliminary formation of guard ring (437/70)

FOR231

.... (4 indent ) Preliminary anodizing (437/71)

FOR232

.... (4 indent ) Preliminary etching of groove (437/72)

FOR233

....• (5 indent ) Using overhanging oxidation mask and pretreatment of recessed walls (437/ 73)

FOR234

.. (2 indent ) Isolation by PN junction only (437/74)

FOR235

... (3 indent ) By diffusion from upper surface only (437/75)

FOR236

... (3 indent ) By up-diffusion from substrate region and down diffusion into upper surface layer (437/76)

FOR237

.... (4 indent ) Substrate and epitaxial regions of same conductivity type, i.e., P or N (437/77)

FOR238

... (3 indent ) By etching and refilling with semiconductor material having diverse conductivity (437/78)

FOR239

... (3 indent ) Using polycrystalline region (437/79)

FOR240

. (1 indent ) Shadow masking (437/80)

FOR241

. (1 indent ) Doping during fluid growth of semiconductor material on substrate (437/81)

FOR242

.. (2 indent ) Including heat to anneal (437/82)

FOR243

.. (2 indent ) Growing single crystal on amorphous substrate (437/83)

FOR244

.. (2 indent ) Growing single crystal on single crystal insulator (SOS) (437/84)

FOR245

.. (2 indent ) Including purifying stage during growth (437/85)

FOR246

.. (2 indent ) Using transitory substrate (437/86)

FOR247

.. (2 indent ) Using inert atmosphere (437/87)

FOR248

.. (2 indent ) Using catalyst to alter growth process (437/88)

FOR249

.. (2 indent ) Growth through opening (437/89)

FOR250

... (3 indent ) Forming recess in substrate and refilling (437/90)

FOR251

.... (4 indent ) By liquid phase epitaxy (437/91)

FOR252

... (3 indent ) By liquid phase epitaxy (437/92)

FOR253

.. (2 indent ) Specified crystal orientation other than (100) or (111) planes (437/93)

FOR254

.. (2 indent ) Introducing minority carrier life time reducing dopant during growth, i.e., deep level dopant Au (Gold), Cr (Cromium), Fe (Iron), Ni (Nickel), etc. (437/94)

FOR255

.. (2 indent ) Autodoping control (437/95)

FOR256

... (3 indent ) Compound formed from Group III and Group V elements (437/96)

FOR257

.. (2 indent ) Forming buried regions with outdiffusion control (437/97)

FOR258

... (3 indent ) Plural dopants simultaneously outdiffusioned (437/98)

FOR259

.. (2 indent ) Growing mono and polycrystalline regions simultaneously (437/99)

FOR260

.. (2 indent ) Growing silicon carbide (SiC) (437/100)

FOR261

.. (2 indent ) Growing amorphous semiconductor material (437/101)

FOR262

.. (2 indent ) Source and substrate in close-space relationship (437/102)

FOR263

... (3 indent ) Group IV elements (437/103)

FOR264

... (3 indent ) Compound formed from Group III and Group V elements (437/104)

FOR265

.. (2 indent ) Vacuum growing using molecular beam, i.e., vacuum deposition (437/105)

FOR266

... (3 indent ) Group IV elements (437/106)

FOR267

... (3 indent ) Compound formed from Group III and Group V elements (437/107)

FOR268

.. (2 indent ) Growing single layer in multi-steps (437/108)

FOR269

... (3 indent ) Polycrystalline layers (437/109)

FOR270

... (3 indent ) Using modulated dopants or materials, e.g., superlattice, etc. (437/110)

FOR271

... (3 indent ) Using preliminary or intermediate metal layer (437/111)

FOR272

... (3 indent ) Growing by varying rates (437/112)

FOR273

.. (2 indent ) Using electric current, e.g., Peltier effect, glow discharge, etc. (437/ 113)

FOR274

.. (2 indent ) Using seed in liquid phase (437/114)

FOR275

... (3 indent ) Pulling from melt (437/115)

FOR276

.... (4 indent ) And diffusing (437/116)

FOR277

.. (2 indent ) Liquid and vapor phase epitaxy in sequence (437/117)

FOR278

.. (2 indent ) Involving capillary action (437/118)

FOR279

.. (2 indent ) Sliding liquid phase epitaxy (437/119)

FOR280

... (3 indent ) Modifying melt composition (437/120)

FOR281

... (3 indent ) Controlling volume or thickness of growth (437/121)

FOR282

... (3 indent ) Preliminary dissolving substrate surface (437/122)

FOR283

... (3 indent ) With nonlinear slide movement (437/123)

FOR284

... (3 indent ) One melt simultaneously contacting plural substrates (437/124)

FOR285

.. (2 indent ) Tipping liquid phase epitaxy (437/125)

FOR286

.. (2 indent ) Heteroepitaxy (437/126)

FOR287

... (3 indent ) Multi-color light emitting diode (LED) (437/127)

FOR288

... (3 indent ) Graded composition (437/128)

FOR289

... (3 indent ) Forming laser (437/129)

FOR290

... (3 indent ) By liquid phase epitaxy (437/130)

FOR291

... (3 indent ) Si (Silicon on Ge (Germanium) or Ge (Germanium) on Si (Silicon) (437/131)

FOR292

... (3 indent ) Either Si (Silicon) or Ge (Germanium) layered with or on compound formed from Group III and Group V elements (437/132)

FOR293

... (3 indent ) Compound formed from Group III and Group V elements on diverse Group III and Group V including substituted Group III and Group V compounds (437/133)

FOR294

. (1 indent ) By fusing dopant with substrate, e.g., alloying, etc. (437/134)

FOR295

.. (2 indent ) Using flux (437/135)

FOR296

.. (2 indent ) Passing electric current through material (437/136)

FOR297

.. (2 indent ) With application of pressure to material during fusing (437/137)

FOR298

.. (2 indent ) Including plural controlled heating or cooling steps (437/138)

FOR299

.. (2 indent ) Including diffusion after fusion step (437/139)

FOR300

.. (2 indent ) Including additional material to improve wettability or flow characteristics (437/140)

FOR301

. (1 indent ) Diffusing a dopant (437/141)

FOR302

.. (2 indent ) To control carrier lifetime, i.e., deep level dopant Au (Gold), Cr (Chromium), Fe (Iron), Ni (Nickel), etc. (437/142)

FOR303

.. (2 indent ) Al (Aluminum) dopant (437/143)

FOR304

.. (2 indent ) Li (Lithium) dopant (437/144)

FOR305

.. (2 indent ) Including nonuniform heating (437/145)

FOR306

.. (2 indent ) To solid state solubility concentration (437/146)

FOR307

.. (2 indent ) Using multiple layered mask (437/147)

FOR308

... (3 indent ) Having plural predetermined openings in master mask (437/148)

FOR309

.. (2 indent ) Forming partially overlapping regions (437/149)

FOR310

.. (2 indent ) Plural dopants in same region, e.g., through same mask opening, etc. (437/150)

FOR311

... (3 indent ) Simultaneously (437/151)

FOR312

.. (2 indent ) Plural dopants simultaneously in plural region (437/152)

FOR313

.. (2 indent ) Single dopant forming plural diverse regions (437/153)

FOR314

... (3 indent ) Forming regions of different concentrations or different depths (437/154)

FOR315

.. (2 indent ) Using metal mask (437/155)

FOR316

.. (2 indent ) Outwardly (437/156)

FOR317

.. (2 indent ) Laterally under mask (437/157)

FOR318

.. (2 indent ) Edge diffusion by using edge portion of structure other than masking layer to mask (437/158)

FOR319

.. (2 indent ) From melt (437/159)

FOR320

.. (2 indent ) From solid dopant source in contact with substrate (437/160)

FOR321

... (3 indent ) Using capping layer over dopant source to prevent outdiffusion of dopant (437/161)

FOR322

... (3 indent ) Polycrystalline semiconductor source (437/162)

FOR323

... (3 indent ) Organic source (437/163)

FOR324

... (3 indent ) Glassy source or doped oxide (437/164)

FOR325

.. (2 indent ) From vapor phase (437/165)

FOR326

... (3 indent ) In plural stages (437/166)

FOR327

... (3 indent ) Zn (Zinc) dopant (437/167)

FOR328

... (3 indent ) Solid source is operative relation with semiconductor material (437/168)

FOR329

.... (4 indent ) In capsule type enclosure (437/169)

FOR330

DIRECTLY APPLYING ELECTRICAL CURRENT (437/170)

FOR331

. (1 indent ) And regulating temperature (437/171)

FOR332

. (1 indent ) Alternating or pulsed current (437/172)

FOR333

APPLYING CORPUSCULAR OR ELECTROMAGNETIC ENERGY (437/173)

FOR334

. (1 indent ) To anneal (437/174)

FOR335

FORMING SCHOTTKY CONTACT (437/175)

FOR336

. (1 indent ) On semiconductor compound (437/176)

FOR337

.. (2 indent ) Multi-layer electrode (437/177)

FOR338

. (1 indent ) Using platinum group silicide, i.e., silicide of Pt (Platinum), Pd (Palladium), Rh (Rhodium), Ru (Ruthenium), Ir (Iridium), Os (Osmium) (437/178)

FOR339

. (1 indent ) Using metal, i.e., Pt (Platinum), Pd (Palladium), Rh (Rhodium), Ru (Ruthenium), Ir (Iridium), Os (Osmium), Au (Gold), Ag (Silver) (437/179)

FOR340

MAKING OR ATTACHING ELECTRODE ON OR TO SEMICONDUCTOR, OR SECURING COMPLETED SEMICONDUCTOR TO MOUNTING OR HOUSING (437/180)

FOR341

. (1 indent ) Forming transparent electrode (437/181)

FOR342

. (1 indent ) Forming beam electrode (437/182)

FOR343

. (1 indent ) Forming bump electrode (437/183)

FOR344

. (1 indent ) Electrode formed on substrate composed of elements of Group III and Group V semiconductor compound (437/184)

FOR345

. (1 indent ) Electrode formed on substrate composed of elements of Group II and Group VI semiconductor compound (437/185)

FOR346

. (1 indent ) Single polycrystalline electrode layer on substrate (437/186)

FOR347

. (1 indent ) Single metal layer electrode on substrate (437/187)

FOR348

.. (2 indent ) Subsequently fusing, e.g., alloying, sintering, etc. (437/188)

FOR349

. (1 indent ) Forming plural layered electrode (437/189)

FOR350

.. (2 indent ) Including central layer acting as barrier between outer layers (437/190)

FOR351

.. (2 indent ) Of polysilicon only (437/191)

FOR352

.. (2 indent ) Including refractory metal layer of Ti (Titanium), Zr (Zirconium), Hf (Hafnium), V (Vanadium), Nb (Niobium), Ta (Tantalum), Cr (Chromium), Mo (Molybdenum), W (Tungsten) (437/192)

FOR353

.. (2 indent ) Including polycrystalline silicon layer (437/193)

FOR354

.. (2 indent ) Including Al (Aluminum) layer (437/194)

FOR355

.. (2 indent ) Including layer separated by insulator (437/195)

FOR356

. (1 indent ) Forming electrode of alloy or electrode of a compound of Si (Silicon) (437/196)

FOR357

.. (2 indent ) Al (Aluminum) alloy (437/197)

FOR358

... (3 indent ) Including Cu (Copper) (437/198)

FOR359

... (3 indent ) Including Si (Silicon) (437/199)

FOR360

.. (2 indent ) Silicide of Ti (Titanium), Zr (Zirconium), Hf (Hafnium), V (Vanadium), Nb (Niobium), Ta (Tantalum), Cr (Chromium), Mo (Molybdenum), W (Tungsten), (437/200)

FOR361

.. (2 indent ) Of plantinum metal group Ru (Ruthenium), Rh (Rhodium), Pd (Palladium), Os (Osmium), Ir (Iridium), Pt (Platinum) (437/201)

FOR362

.. (2 indent ) By fusing metal with semiconductor (alloying) (437/202)

FOR363

. (1 indent ) Depositing electrode in preformed recess in substrate (437/203)

FOR364

. (1 indent ) Including positioning of point contact (437/204)

FOR365

. (1 indent ) Making plural devices (437/205)

FOR366

.. (2 indent ) Using strip lead frame (437/206)

FOR367

... (3 indent ) And encapsulating (437/207)

FOR368

.. (2 indent ) Stacked array, e.g., rectifier, etc. (437/208)

FOR369

. (1 indent ) Securing completed semiconductor to mounting, housing or external lead (437/209)

FOR370

.. (2 indent ) Including contaminant removal (437/210)

FOR371

.. (2 indent ) Utilizing potting or encapsulating material only to surround leads and device to maintain position, i.e. without housing (437/211)

FOR372

... (3 indent ) Including application of pressure (437/212)

FOR373

... (3 indent ) Glass material (437/213)

FOR374

.. (2 indent ) Utilizing header (molding surface means) (437/214)

FOR375

.. (2 indent ) Insulating housing (437/215)

FOR376

... (3 indent ) Including application of pressure (437/216)

FOR377

... (3 indent ) And lead frame (437/217)

FOR378

... (3 indent ) Ceramic housing (437/218)

FOR379

... (3 indent ) Including encapsulating (437/219)

FOR380

.. (2 indent ) Lead frame (437/220)

FOR381

.. (2 indent ) Metallic housing (437/221)

FOR382

... (3 indent ) Including application of pressure (437/222)

FOR383

... (3 indent ) Including glass support base (437/223)

FOR384

... (3 indent ) Including encapsulating (437/224)

FOR385

INCLUDING COATING OR MATERIAL REMOVAL, E.G., ETCHING, GRINDING, ETC. (437/ 225)

FOR386

. (1 indent ) Substrate dicing (437/226)

FOR387

.. (2 indent ) With a perfecting coating (437/227)

FOR388

. (1 indent ) Coating and etching (437/228)

FOR389

. (1 indent ) Of radiation resist layer (437/229)

FOR390

. (1 indent ) By immersion metal plating from solution, i.e., electroless plating (437/230)

FOR391

. (1 indent ) By spinning (437/231)

FOR392

. (1 indent ) Elemental Se (Selenium) substrate or coating (437/232)

FOR393

. (1 indent ) Of polycrystalline semiconductor material on substrate (437/233)

FOR394

.. (2 indent ) Semiconductor compound or mixed semiconductor material (437/234)

FOR395

. (1 indent ) Of a dielectric or insulative material (437/235)

FOR396

.. (2 indent ) Containing Group III atom (437/236)

FOR397

... (3 indent ) By reacting with substrate (437/237)

FOR398

.. (2 indent ) Monoxide or dioxide or Ge (Germanium) or Si (Silicon) (437/238)

FOR399

... (3 indent ) By reacting with substrate (437/239)

FOR400

... (3 indent ) Doped with impurities (437/240)

FOR401

.. (2 indent ) Si (Silicon) and N (Nitrogen) (437/241)

FOR402

... (3 indent ) By chemical reaction with substrate (437/242)

FOR403

.. (2 indent ) Directly on semiconductor substrate (437/243)

FOR404

... (3 indent ) By chemical conversion of substrate (437/244)

FOR405

. (1 indent ) Comprising metal layer (437/245)

FOR406

.. (2 indent ) On metal (437/246)

FOR407

TEMPERATURE TREATMENT MODIFYING PROPERTIES OF SEMICONDUCTOR, E.G., ANNEALING, SINTERING, ETC. (437/247)

FOR408

. (1 indent ) Heating and cooling (437/248)

FOR409

INCLUDING SHAPING (437/249)

FOR410

MISCELLANEOUS (437/250)

FOR411

UTILIZING PROCESS EQUIVALENTS OR OPTIONS (437/900)

FOR412

MAKING PRESSURE SENSITIVE DEVICE (437/901)

FOR413

MAKING DEVICE HAVING HEAT SINK (437/902)

FOR414

MAKING THERMOPILE (437/903)

FOR415

MAKING DIODE (437/904)

FOR416

. (1 indent ) Light emmitting diode (437/905)

FOR417

.. (2 indent ) Mounting and contact (437/906)

FOR418

LASER PROCESSING OF FIELD EFFECT TRANSISTOR (FET) (437/907)

FOR419

LASER PROCESSING OF TRANSISTOR (437/908)

FOR420

MAKING TRANSISTOR ONLY (437/909)

FOR421

MAKING JOSEPHSON JUNCTION DEVICE (437/910)

FOR422

MAKING JUNCTION-FIELD EFFECT TRANSISTOR (J-FET) OR STATIC INDUCTION THYRSISTOR (SIT) DEVICE (437/911)

FOR423

MAKING METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MESFET) DEVICE ONLY (437/912)

FOR424

MAKING METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET) DEVICE (437/913)

FOR425

MAKING NON-EPITAXIAL DEVICE (437/914)

FOR426

MAKING VERTICALLY STACKED DEVICES (3-DIMENSIONAL STRUCTURE) (437/915)

FOR427

MAKING PHOTOCATHODE OR VIDICON (437/916)

FOR428

MAKING LATERAL TRANSISTOR (437/917)

FOR429

MAKING RESISTOR (437/918)

FOR430

MAKING CAPACITOR (437/919)

FOR431

MAKING SILICON-OXIDE-NITRIDE-OXIDE ON SILICON (SONOS) DEVICE (437/920)

FOR432

MAKING STRAIN GAGE (437/921)

FOR433

MAKING FUSE OR FUSABLE DEVICE (437/922)

FOR434

WITH REPAIR OR RECOVERY OF DEVICE (437/923)

FOR435

HAVING SUBSTRATE OR MASK ALIGNING FEATURE (437/924)

FOR436

SUBSTRATE SUPPORT OR CAPSULE CONSTRUCTION (437/925)

FOR437

CONTINUOUS PROCESSING (437/926)

FOR438

FORMING HOLLOW BODIES AND ENCLOSED CAVITIES (437/927)

FOR439

ENERGY BEAM TREATING RADIATION RESIST ON SEMICONDUCTOR (437/928)

FOR440

RADIATION ENHANCED DIFFUSION (R.E.D.) (437/929)

FOR441

ION BEAM SOURCE AND GENERATION (437/930)

FOR442

IMPLANTATION THROUGH MASK (437/931)

FOR443

RECOIL IMPLANTATION (437/932)

FOR444

DUAL SPECIES IMPLANTATION OF SEMICONDUCTOR (437/933)

FOR445

DOPANT ACTIVATION PROCESS (437/934)

FOR446

BEAM WRITING OF PATTERNS (437/935)

FOR447

BEAM PROCESSING OF COMPOUND SEMICONDUCTOR DEVICE (437/936)

FOR448

HYDROGEN PLASMA TREATMENT OF SEMICONDUCTOR DEVICE (437/937)

FOR449

MAKING RADIATION RESISTANT DEVICE (437/938)

FOR450

DEFECT CONTROL OF SEMICONDUCTOR WAFER (PRETREATMENT) (437/939)

FOR451

SELECTIVE OXIDATION OF ION AMORPHOUSIZED LAYERS (437/940)

FOR452

CONTROLLING CHARGING STATE AT SEMICONDUCTOR-INSULATOR INTERFACE (437/941)

FOR453

INCOHERENT LIGHT PROCESSING (437/942)

FOR454

THERMALLY ASSISTED BEAM PROCESSING (437/943)

FOR455

UTILIZING LIFT OFF (437/944)

FOR456

STOICHIOMETRIC CONTROL OF HOST SUBSTRATE COMPOSITION (437/945)

FOR457

SUBSTRATE SURFACE PREPARATION (437/946)

FOR458

FORMING TAPERED EDGES ON SUBSTRATE OR ADJACENT LAYERS (437/947)

FOR459

MOVABLE MASK (437/948)

FOR460

CONTROLLED ATMOSPHERE (437/949)

FOR461

SHALLOW DIFFUSION (437/950)

FOR462

AMPHOTERIC DOPING (437/951)

FOR463

CONTROLLING DIFFUSION PROFILE BY OXIDATION (437/952)

FOR464

DIFFUSION OF OVERLAPPING REGIONS (COMPENSATION) (437/953)

FOR465

VERTICAL DIFFUSION THROUGH A LAYER (437/954)

FOR466

NONSELECTIVE DIFFUSION (437/955)

FOR467

DISPLACING P-N JUNCTION (437/956)

FOR468

ELECTROMIGRATION (437/957)

FOR469

SHAPED JUNCTION FORMATION (437/958)

FOR470

USING NONSTANDARD DOPANT (437/959)

FOR471

WASHED EMITTER PROCESS (437/960)

FOR472

EMITTER DIP PREVENTION (OR UTILIZATION) (437/961)

FOR473

UTILIZING SPECIAL MASKS (CARBON, ETC.) (437/962)

FOR474

LOCALIZED HEATING CONTROL DURING FLUID GROWTH (437/963)

FOR475

FLUID GROWTH INVOLVING VAPOR-LIQUID-SOLID STAGES (437/964)

FOR476

FLUID GROWTH OF COMPOUNDS COMPOSED OF GROUPS II, IV, OR VI ELEMENTS (437/965)

FOR477

FORMING THIN SHEETS (437/966)

FOR478

PRODUCING POLYCRYSTALLINE SEMICONDUCTOR MATERIAL (437/967)

FOR479

SELECTIVE OXIDATION OF POLYCRYSTALLINE LAYER (437/968)

FOR480

FORMING GRADED ENERGY GAP LAYERS (437/969)

FOR481

DIFFERENTIAL CRYSTAL GROWTH (437/970)

FOR482

FLUID GROWTH DOPING CONTROL (437/971)

FOR483

UTILIZING MELT-BACK (437/972)

FOR484

SOLID PHASE EPITAXIAL GROWTH (437/973)

FOR485

THINNING OR REMOVAL OF SUBSTRATE (437/974)

FOR486

DIFFUSION ALONG GRAIN BOUNDARIES (437/975)

FOR487

CONTROLLING LATTICE STRAIN (437/976)

FOR488

UTILIZING ROUGHENED SURFACE (437/977)

FOR489

UTILIZING MULTIPLE DIELECTRIC LAYERS (437/978)

FOR490

UTILIZING THICK-THIN OXIDE FORMATION (437/979)

FOR491

FORMING POLYCRYSTALLINE SEMICONDUCTOR PASSIVATION (437/980)

FOR492

PRODUCING TAPERED ETCHING (437/981)

FOR493

REFLOW OF INSULATOR (437/982)

FOR494

OXIDATION OF GATE OR GATE CONTACT LAYER (437/983)

FOR495

SELF-ALIGNING FEATURE (437/984)

FOR496

DIFFERENTIAL OXIDATION AND ETCHING (437/985)

FOR497

DIFFUSING LATERALLY AND ETCHING (437/986)

FOR498

DIFFUSING DOPANTS IN COMPOUND SEMICONDUCTOR (437/987)