This class provides for active solid-state electronic devices, that is, electronic devices or components that are made up primarily of solid materials, usually semiconductors, which operate by the movement of charge carriers - electrons or holes - which undergo energy level changes within the material and can modify an input voltage to achieve rectification, amplification, or switching action, and are not classified elsewhere.
SCOPE OF THE CLASS
Active solid-state electronic devices include diodes, transistors, thyristors, etc., but exclude pure resistors, capacitors, inductors, or combinations solely thereof. The latter class of devices is characterized as passive.
The subject matter to be found here includes only active solid-state devices, per se. It may include one or more such devices combined with contacts or leads, or structures configured to be tested on a semiconductor chip, or merely semiconductor material without contacts or leads where the sole disclosed use is an active solid-state device. This subject matter does not include active solid-state devices combined with significant circuits.
Claims reciting an integrated circuit nominally with significant metallization will be classified in Class 257, whereas otherwise, nominal recitation of an integrated
circuit (i.e., without significant active solid-state device recitation) will not be sufficient to permit the device to be classified in Class 257.
KEY CONCEPTS
See Subclass References to the Current Class, below, for references that relate to key concepts and terms found in Class 257. An indication that a particular concept or term occurs in one or more subclasses does not mean that the indicated subclass or subclasses are the only places that subject matter may be found. That subject matter may possibly be found elsewhere in Class 257 listed under a related term or concept that may be broader or narrower or of the same scope.

LINES WITH OTHER CLASSES AND WITHIN THIS CLASS
A. Classes related to Class 257 subject matter in the sense that they employ active solid-state devices in electronic circuits and the relationship of these classes to Class 257 is mainly that of a combination to a subcombination or of a genus to a specie. See References to Other Classes, below, referencing this section.
B. Classes related to Class 257 subject matter in the sense that they employ active solid-state devices in electronic circuits and the use of active solid-state electronic devices primarily as a perfecting feature. See References to Other Classes, below, referencing this section.
C. See References to Other Classes below for classes that provide for materials used in active solid-state electronic devices.
D. See References to Other Classes, below, for classes related to Class 257 because they provide for methods of making, cleaning, coating, etc., active solid-state devices, e.g., Class 438, Semiconductor Device Manufacturing: Process.
E. See References to Other Classes, below, for Classes related to Class 257 because they provide for active solid-state electronic devices structures with a specified use, e.g., Class 136, Batteries: Thermoelectric and Photoelectric.
F. See References to Other Classes, below, for classes providing for provide for subcombination subject matter that can be used as component part of active solid-state electronic devices (e.g., lead frames) or perfect the device (e.g., a heat sink).
G. Classes which provide for passive solid-state electronic devices with names that may refer to either active or passive solid-state electronic devices, e.g., coherers, varistors, varactors. luminescent or electroluminescent devices. The
devices may be part of the main subject matter of the class or may be used as circuit elements in circuits or control or measuring systems which form the main subject matter of the class.
See References to Other Classes, below, referencing this section.

SEE OR SEARCH THIS CLASS, SUBCLASS:
1 through 8, for bulk effect device.
2 - 5, 16, 52-63, and 646, for amorphous semiconductor material.
4 72, 91, 144, 150, 151, 175-177, 181, 182, 207-211, 246-250, 276, 309, 317, 401, 448, 457, 459, 503, 508, 573, 584, 587, 602, 621, 625, 666-676, and 692-697, for configuration of electrode, contact, lead or pad.
4 32, 33, 81, 91, 99, 144, 150-153, 177-179, 181, 182, 203, 207-211, 276, 377, 382-385, 459, 503, 522, 554, 573, 576, 584, 602, 621, 625, 661-677, 690-700, and 734-786, for electrical contact or lead.
6 through 8, for Gunn effect (intervalley transfer).
7 for intervalley transfer (e.g., Gunn) device in integrated circuit.
10 through 11, and 407, for controlled work function material.
10 and 11, for electron emissive layer.
10 through 27, and 104-106, for heterojunction involving quantum-mechanical tunneling.
10 and 11, for photocathode.
10 54, 73, 155, 192-195, 217, 260, 267, 269, 275-277, 280-284, 449-457, 471-486, and 928, for Schottky barrier.
10 11, 30-39, and 314-326, for tunneling-insulator layer.
10 11, and 407, for work function of material, controlled, e.g., low.
13 76, 78, 85, 90, and 94-97, for heterojunction light emitter.
13 79-103, and 918, for light emitting device.
13 through 25, for quantum well device.
15 through 22, and 28, for superlattice.
16 55, 63, and 65, for heterojunction in non-single-crystal material.
18 19, and 190, for mismatched or strained lattice.
18 19, and 190, for mismatch of lattice constant.
18 and 19, for strained layer superlattice heterojunction.
19 76, 78, 103, 200-201, and 613-616, for alloy of two different semiconductors (e.g., Ga[subscrpt]x[end subscrpt]In[subscrpt]1-x[end subscrpt]As).
20 24, 27, 57-61, 66-72, 133-145, 192-195, 202-211, 213, and 252-413, for field effect devices.
20 24, and 194, for HEMT (High electron mobility transistor).
20 27, 187, and 192-195, for heterojunction FETs.
21 85, 184-189, for heterojunction in light responsive device.
21 for light responsive or activated device (superlattice quantum well heterojunction).
21 53-56, 59, 72, 80-85, 113-118, 184-189, 222, 223, 225-234, 257, 258, 290-294, 325, 428-466, 680, 681, and 749, for radiation responsive.
21 and 187, for light responsive heterojunction transistor.
21 187, 443, and 462, for photosensitive bipolar transistor.
26 27, and 29, for ballistic transport device.
26 27, and 29, for ballistic transport transistor.
31 through 36, for Josephson device.
31 through 36, and 661-663, for superconductive element/device.
31 through 36, 468, and 661-663, for thermal device operated at cryogenic temperature.
33 for high temperature (30 K) Josephson device.
40 for organic semiconductor material.
41 for point contact device.
42 for Selenium (elemental).
44 through 47, for alloyed junction.
45 for thermal gradient zone melting (TGZM).
46 104, and 105, for Esaki diode.
46 and 104-106, for p-n junction type (Esaki type) tunneling.
47 197, 205, 273, 350, 361, 370, 378, 423, 462, 477 though 479, 511, 512, 517, 518, 525, 526, 539-543, and 552-593, for bipolar transistor structure.
47 for alloyed junction bipolar transistor.
48 and 797, for calibration or test structure.5, for array of bulk effect amorphous switches.
48 for test structures.
49 through 75, for non-single crystal, as active layer.
49 through 51, 64-75, 359, 377, 380-382, 385, 412, 505, 518, 520, 524-527, 538, 554, 576, 581, 588, and 754-757, for polycrystalline semiconductor material.
49 through 51, and 64-75, for polycrystalline active junction material.
49 through 51, and 64-75, for recrystallized active semiconductor layer.
50 and 530, for anti-fuse component or element.
50 530, and 928, for shorted devices, in general, e.g., anti-fuse elements.
53 through 56, for amorphous semiconductor material device.
53 through 56, 108, 225, 252, and 414, for responsiveness to nonelectric signal.
55 and 63, for alloy of amorphous semiconductor materials.
55 63, and 65, and 646, for silicon nitride to increase band gap of amorphous or polycrystalline silicon.
56 58, 62, and 65, for for dangling bond.
56 58, 62, and 68, for passivation of dangling bonds in nonsingle crystal semiconductor.
57 through 61, 66-72, and 368-401, for insulated gate FET in integrated circuit.
57 through 61, and 66-72, for FET in non-single crystal or recrystallized semiconductor material (e.g., amorphous or polycrystalline semiconductor as channel).
59 72, and 88-93, for array as imager, or with transparent electrode, or as display (with plural light emitters).
59 72, 449-457, and 749, for electrical contact or lead transparent to light.
59 72, and 293, for photoresistor combined with accessing FET.
59 72, 453, and 749, for transparent electrode.
60 135, 136, 263-267, 302, and 328-334, for vertical channel field effect device.
64 255, 521, 627, and 628, for crystal axis or plane.
65 for alloy of polycrystalline semiconductor materials.
66 67, 69, 379-381, 903, and 904, for static memory cell using FET.
67 through 70, for stacked FETs.
67 69, 70, and 74, for stacked FETs.
68 through 71, 296-313, 296, 298, 300, 906, and 908, for capacitance combined with insulated gate device. (e.g., DRAM).
68 71, and 295-313, for insulated gate device (capacitor or combined with capacitor).
68 71, 296-313, and 905-908, for memory device component involving a capacitor (e.g., dynamic memory cell).
68 71, 303, and 306-309, for stacked capacitors in DRAM cell.
68 and 301-305, for capacitor in trench.
68 283, 284, 330-334, 374, 397, 513, 514, 622, 647, and 648, for vertical walled groove in semiconductor.
69 195, 204, 206, 338, 350, 351, 357-359, and 365-377, for CMOS.
69 195, 204, 206, 274, 338, 350, 351, 357-359, and 369-377, for complementary field effect transistors.
74 and 278, for three-dimensional integrated circuit.
76 through 78, and 183-201, for heterojunction, generally.
76 through 78, for wide band gap semiconductor material other than GaAsP or GaAlAs.
80 through 85, for light responsive or activated device
combined with light emitting device.
81 99, 177 -181, 584, 625, 675, 688, 689, 705, 707, 712-722, and 796, for heat sink.
81 82, and 99, for housing or package for light emitter.
81 and 82, for housing or package for light emitter combined with light receiver.
81 82, 433, 434, 680, 681, for housing or package for light responsive device.
81 99, and 666-677, for lead frame.
83 for light coupled transistor structure.
86 and 87 for indirect band gap active layer - light emitter.
87 131, 156, 439, 523, 590, and 608-612, for deep level dopant/impurity.
87 126, 131, 156, 523, 590, 609-612, and 617, for recombination centers.
91 98, 151, 175, 176, 249, 250, 276, 282-284, 309, 317, 401, 418, 435, 448, 457, 459, 503, 508, 534, 573, 587, 602, 621, 662, and 664, for shape(d) contact, electrode, conductor, or terminal.
91 98, 294, 323, 435, and 659, for optical shield.
93 for plural light emitters in integrated circuit.
93 374, 446, 499 and 564, for electrical isolation of components in integrated circuit.
95 117, 118, 127, 170, 244, 283, 284, 301-305, 330-334, 418, 419, 447, 460, 466, 496, 534, 571, 586, and 618-628, for grooves, generally.
95 170, 171, 452, 466, 496, 571, 586, 594, 600, 618, and 623-626, for mesa structure.
95 for shaped contact, electrode, etc., external of heterojunction light emitter.
98 116, 117, 294, and 432, for light fiber, guide, or pipe.
98 for luminescent material used with light emitter.
98 181, 418, 688, 710, 711, 728, and 730, for shaped housing or package.
98 99, 116, 434, 680, and 681, for window (optical) for housing.
100 433, 434, 667, 687, 767-and 796, for encapsulated.
101 194, 219-221, 264, 269, 285, 335-345, 404, 430, 450, 458, 463, 492, 493, 497, 498, 543, 545, 548, 558, 583, 591, 592, 596, 597, 605, 606, 655-657, 927, and 929, for dopant/impurity concentration, incl., graded profile.
102 227, 439, and 607-612, for specified, generally (e.g., photoionizable).
106 for reverse conducting diode (tunnel diode).
106 for Zener diode.
107 through 182, and 918, for regenerative switching device.
108 252, and 421-427, for magnetic field responsive.
108 225, 254, and 415 and-419, for device responsive to pressure.
108 222, 225, 254, and 417-419, for strain sensor.
108 225, 252, and 467-470, for passivating device responsive to temperature.
109 for Shockley diode.
110 and 119-131, for bidirectional device (diac, rectifier).
113 through 118, for regenerative-type switching device.
115 123, and 157-161, for amplified gate in thyristor.
121 for reverse conducting thyristor.
121 for Static Induction Transistor (SIT) - Bipolar transistor as reverse path of bidirectional conducting thyristor.
122 141, 146, and 162, for lateral structure in regenerative device.
124 125, and 133-145, for FET in or combined with thyristor.
125 137, 138, 143, and 149, for shunt, regenerative device.
125 137, 138, 143, 149, and 154, for shorted emitter, anode or cathode, in thyristor.
127 446, 510-522, 571, 577, and 594, for groove to define plural devices.
127 170, 339, 372-376, 394-400, 409, 452, 484, 490, 493-495,
and 605, for guard ring or region.
131 156, 376, 424, 523, 590, and 617, for crystal damage.
133 145, 195, 205, 273, 337, 350, 361, 362, 370, and 378, for field effect combined with bipolar type (including regenerative type) device.
134 through 136, 217, 256-287, and 504, for JFET.
136 205, 264, 268, 269, 392, for enhancement mode.
139 through 145, and 212, for conductivity modulated transistor.
139 through 145, 147-153, for extended latching current device.
139 through 145, 147-153, and 372-376, for means to prevent latchup.
139 through 145, and 211, for conductivity modulated transistor.
142 148, 376, 553, and 583, for doping for gain reduction.
146 476-479, and 499-564, for structure with elec. isolated components.
150 151, 177-181, for housing or package for regenerative type switching device.
154 169, 194, 195, 218, 264, 523, 646, and 656, for high resistivity semiconductor region - see, also, intrinsic material; PIN device.
154 350, 358, 359, 363, 379-381, 516, 533, 536-543, 571, 572, 577, 580-582, and 904, for resistive element (resistor) (passive device).
164 and 580-582, for ballasting of current (e.g., by resistors).
164 through 166, 560-561, 563, and 579- 581, for multiple/plural emitter.
170 for edge, beveled - preventing breakdown.
171 496, 586, and 618+, for bevel.
171 452, 483, and 484, for protection against edge breakdown.
171 and 496, for reverse bevels.
173 174, 328, 355-363, 487-496, and 546, for protection against overcurrent or overvoltage.
173 529, 665, and 910, for fuse/fusible link.
173 for overvoltage protection means in thyristor.
177 through 181, 467, 468, 573, 625, 675, 688, 705-707, and 712-722, for cooling.
178 179, and 746-748, for stress avoidance between electrode and semiconductor.
178 through 179, 633, 747, and 748, for thermal expansion matching or compensation.
180 and 733, for stud-type mount for housing.
180 and 733, for stud mount.
181 182, 688, 689, 726, 727, and 785 for press contact of electrode and semiconductor.
184 through 189, for heterojunction.
185 and 191, for graded band gap.
185 for staircase (light responsive heterojunction).
187 197, and 198, for heterojunction bipolar transistor.
193 215-251, and 912, for charge transfer device.
193 for charge transfer device.
198 for wide band gap emitter heterojunction bipolar transistor.
199 481, 482, 551, and 603-606, for avalanche diode.
199 482, and 604, for IMPATT.
199 259, 275-277, 482, 523, 604, 624, 625, 659, 662, 664, and 728, for for microwave device component.
202 and 909, for master slice (gate array).
202 and 909, for gate arrays.
202 through 211, and 909, for gate arrays.
205 273, 350, 361, 370, and 378, for bipolar combined with field effect type device.
205 273, 350, 361, 370, and 378, for bipolar transistor structure combined with FET.
206 208, 210, and 211, for configuration of elements in gate array.
209 for gate array with programmable signal paths.
210 and 758-760, for multi-level metallization.
212 for double-base diode (unijunction transistor).
212 for Static Induction Transistor (SIT) - Unijunction transistor.
212 for unijunction transistor.
214 for charge injection device.
215 218, and 225-251, for surface channel charge transfer device.
216 for bulk channel device.
216 and 285, for buried channel.
219 through 221, for nonuniform channel doping in buried channel CCD.
223 230, and 445, for antiblooming.
223 230, and 445, for suppression of blooming in light imager.
224 and 243, for channel confinement.
225 253, and 414, for chemical sensor.
225 for CCD with fixed pattern memory as ROM.
228 447, 460, for backside illumination.
239 for floating diffusion as CCD Output Tap.
239 261, and 315-323, for floating gate.
240 for nonuniform channel thickness in CCD.
241 for parallel channels in CCD.
245 364, and 489, for resistive electrode.
246 through 248, for nonuniform channel doping in CCD, for directionality.
249 317, 359, 363, 364, 377, 380-382, 384, 385, 387, 407, 412, 413, 489, 505, 518, 520, 524-527, 538, 554, 576, 581, 588, 646, 754-756, 904, and 914, for polycrystalline material (including polysilicon contacts) other than active junction material.
251 for bucket-brigade device.
254 and 416, for acoustic energy detector.
256 and 257, for light responsive PIN device combined with JFET.
257 and 258, for JFET.
227 and 439, for photoionization.
258 291-294, 443-448, and 911, for array of electrode field effect devices.
260 and 262, in or combined with a JFET device.
260 and 261, for memory device component involving a JFET (e.g., taper isolated or floating pn junction gate type).
265 for vertical current path JFET in integrated circuit.
266 267, and 287, for parallel channels in JFET.
269 and 285, for nonuniform channel doping in JFET.
272 through 278, for JFET in integrated circuit.
275 through 278, 662, and 664, for stripline lead.
276 for air bridge electrical lead.
276 for air bridge contact.
283 and 284, for groove alignment of Schottky gate to source region in MESFET.
283 through 284, 330-334, for gate electrode of FET formed in groove.
286 for nonuniform channel thickness in JFET.
290 and 294, for IGFET.
291 through 294, 326, 334, 337, 338, 347-363, and 368-401, for insulated gate device (IGFET in integrated circuit).
294 297, 340, 409, 435, 488-490, 503, 508, 630, 659-660, and 662, for shield electrode.
295 298, and 314-326, for EPROM/EEPROM.
295 298, 314, and 324-326, for MNOS insulated gate-type memory device component.
297 349, 547, and 620, for means to prevent charge leakage or leakage current.
297 349, 354, 372-376, 503, 547, and 620, for means to
prevent leakage current or charge leakage.
297 660, and 921, for protection against radiation (e.g., alpha particles).
297 660, and 921, for radiation protection.
297 422, and 659-660, for ionizing radiation shield, charged particles, electric or magnetic fields.
298 and 315-326, for insulated gate device (floating gate memory device).
298 and 315-323, for floating insulated gate memory-type memory device component.
299 for substrate bias (electrical generator.
301 through 305, 534, and 599, for groove involving a capacitor.
305 354, 376, 398-400, 519, 620, 648, and 652, for channel stop.
305 333, 374, 389, 395-399, 510-521, and 632-651, for field oxide.
312 480, and 595-602, for voltage variable capacitance device.
314 through 326 for variable threshold insulated gate device (e.g., EEPROM, non-volatile memory MOSFET).
322 for programming of floating gate MISFET (avalanche breakdown).
323 680, and 681, for light erasure of EPROM.
325 for oxynitride as insulator in MNOS memory IGFET.
327 through 346, for short channel.
328 and 355-363, for overvoltage protection means in IGFET.
328 and 355-363, for MOSFET gate protection.
331 341, 342, and 401, for parallel channels in IGFET.
332 346, 387, 388, 412, and 413, for self-aligned MOSFET gate.
333 340, and 386-389, for reduction of gate capacitance (FET).
333 346, 387, and 388, for overlap of gate electrode with source or drain in IGFET.
334 337, and 338, for VMOS or DMOS short channel IGFET in integrated circuit.
336 344, 408, and 900, for LDD (lightly doped drain) device.
339 409, 483, 484, and 487-496, for preventing avalanche breakdown.
339 409, and 488-490, for field relief electrode.
339 409, 490, and 495, for floating pn junction guard region.
340 394, and 630, for field shield electrode.
345 and 404, for nonuniform channel doping in IGFET. depletion mode.
347 through 354, and 507, for insulating substrate integrated circuit.
347 through 354, and 507, for single crystal insulating substrate.
347 through 354, and 507, for single crystal semiconductor layer on insulating substrate (SOI).
348 391, 392, and 402-407, for depletion mode Insulated Gate FET.
349 354, 372-376, 503, and 547, for controlling, reducing, etc. parasitics.
350 511, 512, 525, and 555-562, for lateral bipolar transistor in integrated circuit.
354 through 374, 395-399, 501, and 506-527, for dielectric isolation.
355 through 363, for gate insulator breakdown protection in IGFET integrated circuit.
360 and 367, for insulated gate device (controlling pn junction breakdown).
361 362, and 497-499, for punch-device.
366 for overlap of plural gate electrodes in IGFET.
368 through 401, for PN junction isolation in MOSFET integrated circuit.
374 394-398, 626, 631-651, and 758-760, for insulating/passivating coating.
374 396-398, 510-521, 647, and 648, for groove (dielectric isolation means).
377 382-385, 388, 412, 413, 454-458, 486, 518, 554, 576, 588, 747, 748, 754-757, 761, 763-764, and 768-770, for refractory electrode material.
377 382-384, 388, 412, 413, 454-456, 485, 486, 576, 587, 751, 754-757, and 768-770, for silicide.
379 through 381, and 903-904, for static RAM arrangement.
379 through 381, 516, 528-543, 903, 904, 919, and 924, for passive components in integrated circuits.
382 through 384, 576, 757, 768, and 769, for metal or silicide of platinum group metal, as ohmic contact.
383 388, 412, 485, 486, 763, 764, and 770, for pure or alloyed titanium.
388 407, 412, and 413, for metal or silicide of platinum group metal, as MOSFET gate.
390 and 391, for array of IGFETs.
390 and 391, for nonerasable (e.g., ROM).
390 and 391, for mask-programmed MOSFET ROM.
401 for nonuniform channel thickness in IGFET.
410 411, 639-641, 649, and 760, for silicon nitride.
411 and 760, for composite insulator material.
411 for oxynitride as gate insulator in IGFET, in general.
422 and 659, for magnetic field shielding
423 511, 512, 525, 526, 556, 557-562, 575, and 576, for lateral bipolar transistor structure.
423 for magnetic field sensing bipolar transistor.
426 and 469, for passivating means to reduce temperature sensitivity.
427 for magnetic field sensor in integrated circuit.
430 and 458, for light or radiation responsive PIN device, in general.
431 466, for light responsive or activated device generally.
437 for anti-reflection coating.
444 for matrix or array of light sensor elements overlying active switching elements in integrated circuit.
446 for matrix or array of light sensors with specific isolation means in integrated circuit.
449 through 457, for Schottky barrier.
453 through 455, 485, and 486, for metal or silicide of platinum group metal, as Schottky barrier material.
458 523, 538, and 656, for intrinsic material or region.
458 for PIN diode.
459 676, and 786, for bonding flag or pad
465 592, 599, 653, and 654, for configuration of junction geometry.
466 496, 571, 586, 594, 599, 600, and 618-628, for configuration of external portion of active device.
474 for bipolar transistor with Schottky barrier transistor as emitter-base or base-collector junction.
474 through 479, 512, 525, 555, 556, and 574-576, for integrated injection logic.
477 through 479, for bipolar transistor in integrated circuit with Schottky barrier diode.
479 and 570, for anti-saturation diode.
479 for baker clamp.
486 740, 751, and 767, for diffusion barrier.
491 and 492, for means to increase breakdown voltage in integrated circuit.
492 and 493, for RESURF device.
494 for reverse biased (electrical) pn junction guard region.
494 for reverse biased guard ring to prevent breakdown.
497 and 498, for punchthrough transistor.
504 for JFET isolation in integrated circuit (i.e., pinched-off region used for integrated circuit isolation).
509 through 521, 544-556, and 929, for isolated PN junction.
509 through 521, for PN junction isolation in integrated circuit combined with dielectric isolation.
511 512, 525, 555, 556, 569, and 574-576, for complementary bipolar transistor structure.
511 512, 525, 555, 556, 569, and 574-576, for complementary bipolar transistors.
511 512, 514, 515, 517, 518, 525, 526, 539-543, and 552-563, for bipolar transistors in integrated circuit.
511 512, 514, 517, 518, and 552-556, for bipolar transistors with pn junction isolation.
512 569, and 574-576, for bipolar transistor structure with common active region.
512 569, and 574-576, for complementary bipolar transistors with common active region.
512 555, 556, and 574-576, for logic device (superintegrated) using Integrated Injection Logic (I[supscrpt]2[end supscrpt]L).
514 and 515, for walled emitter bipolar transistor.
522 for air isolation of integrated circuit.
531 for inductance in integrated circuit.
532 through 535, for capacitance as passive component in non-FET I.C.
540 for dynamic isolation pocket bias (electrical).
541 for pinch resistor.
544 through 556, for PN junction isolation in integrated circuit in general.
545 for reduction of isolation junction capacitance.
546 for overvoltage protection means in pn junction isolated integrated circuit.
546 for reverse voltage polarity protection, in pn junction isolated integrated circuit.
549 for collector diffused type isolation.
559 lateral transistor formed along groove.
560 through 564, for multiple/plural collectors.
560 563, and 579-581, for plural emitters in bipolar transistor.
562 for logic device (superintegrated) using Current Hogging Logic (CHL).
565 through 593, for bipolar transistor structure, in general.
571 for groove resistor in Darlington bipolar device.
573 and 584, for housing or package for bipolar transistor devices.
592 for configuration of bipolar transistor base region.
602 for housing or package for voltage-variable capacitance device.
607 and 917, for plural dopants of same conductivity type.
610 for platinum (as deep level dopant).
620 for scribe line or region.
624 for prevention of skin effect, microwave device, by low resistance ohmic contact along mesa surface.
626 and 629-652, for passivation of semiconductor surface.
634 for passivating glass with ingredient to adjust softening or melting temperature.
639 and 649, for oxynitride as passivating insulating layer.
642 643, and 759, for organic insulating material or layer.
643 759, and 788, for polyamide.
643 759, and 792, for polyimide.
653 654, for shaped PN junction.
655 for reverse doping concentration gradient profile.
656 for PIN device in general.
657 for stepped profile.
657 for stepped dopant concentration profile.
660 for housing or package for radiation shielded device.
662 and 664, for transmission line lead.
663 for superconductive contact or lead on integrated circuit.
669 670, 673, 674, 676, 688, 689, 692-697, 728, 735-739, 752, 758, 773-776, and 780-786, for shaped contact, electrode, etc.
669 for lead frame having stress relief.
676 for die bonding flag.
676 for lead frame-type mount for chip.
678 through 733, for housing or package, generally.
679 and 922, for smart card (e.g., "credit card" integrated circuit package).
686 for stacked housings.
700 701, and 703-707, for ceramic housing or package material.
705 for high thermal conductivity ceramic for package.
711 for metal housing with mount for chip.
713 for cooling of housing or contents for integrated circuit.
714 through 716, for liquid coolant.
719 for press contact of heat sink and semiconductor.
720 for high thermal conductivity insert in heat sink.
731 for mount for housing.
732 for flanged type mount for housing.
735 through 739, 746, 758-760, 773-776, 780-781, 786, 920, 923, 926, for configuration of electrode, etc.
738 780, and 781, for ball-shaped leads, contacts or bonds.
740 for prevention of spiking of contact metal.
741 through 745, and 751, for gold (deep level dopant as contact or electrode).
742 and 743, for dopant/impurity conductivity type in electrical contact material.
746 for composite electrode material.
746 for electrode material.
749 for electrode transparent to light.
751 767, and 915, for titanium nitride.
758 through 760, for multiple metallization layers separated by insulating layer on integrated circuit.
760 for oxynitride between metal levels in integrated circuit.
764 765, and 768-771, for alloy of materials forming electrical contacts.
767 for electromigration prevention or reduction.
777 for chip on chip mount for chip.
778 for flip chip mount for chip.
779 and 780-784, for die or lead bond.
782 and 783, for die bond.
900 for MOSFET type gate sidewall insulating spacer.
901 for MOSFET substrate bias (electrical).
901 for MOSFET substrate bias.
902 for FET with metal source region.
903 and 904, for configuration of FETs for Static Memory Cell (SRAM).
905 through 908, for configuration of Dynamic Memory (DRAM).
905 for trench shared by plural DRAM cells.
906 Electrode use for accessing capacitance, in DRAM.
910 for array of diodes.
911 for vidicon array (cross-reference collection).
915 for titanium nitride.
919 for parallel electrical connections to average out manufacturing variations.
920 for parallel electrical connections to reduce resistance.
922 for anti-tamper device.
922 for diode arrays.
922 for anti-tamper or inspection means for
923 for conductor aspect ratio.
925 for bridge rectifier module.
927 for shaped depletion layer.
930 for Peltier cooling (cross-reference collection).

REFERENCES TO OTHER CLASSES

SEE OR SEARCH CLASS:
29, Metal Working, 25.01 for process and apparatus for making barrier layer or semiconductor devices not elsewhere classified; subclass 25.35 for piezoelectric device making not elsewhere classified; subclasses 25.41+ for electric condenser making not elsewhere classified; subclasses 592.1+ for process of mechanical manufacture of electrical devices, not elsewhere classified; and subclasses 825+ for electrical conductor manufacturing processes, including subclass 827 regarding beam lead frames and beam leads. (class providing for methods of making, cleaning, coating, etc., active solid-state devices, See Lines With Other Classes and Within This Class, D)
29, Metal Working, subclass 612 for making thermally variable resistors. (see G, Lines With Other Classes and Within This Class, above)
29, Metal Working, appropriate subclasses for manufacturing methods of beam lead frame or beam lead devices. (Class providing for subcombination subject matter used as component part of active solid-state electronic devices. See Lines with Other Clases and Within This Class, F, above)
40, Card, Picture, or Sign Exhibiting, subclass 544 for electroluminescent signs. (see B, Lines With Other Classes and Within This Class, above.)
62, Refrigeration, 3.2 for thermoelectric, e.g., Peltier effect cooling processes and apparatus. (see B, Lines With Other Classes and Within This Class, above.)
65, Glass Manufacturing, 138 for Electronic envelope header, terminal, or stem making means and subclass 155 for electronic device making involving fusion bonding. (class providing for methods of making, cleaning, coating, etc., active solid-state devices, See Lines With Other Classes and Within This Class, D)
73, Measuring and Testing, subclass 31.06 for gas analysis semiconductor detector details; subclass 777 for semiconductor stress sensor structure; and subclass 754 for semiconductor type fluid pressure gauges. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
84, Music, subclass 676 and 678 for transistorized analog oscillator circuits. (see B, Lines With Other Classes and Within This Class, above.)
102, Ammunition and Explosives, subclass 202.4 for semiconductor voltage variable resistance shunts in devices used to prevent accidental fuse ignition. (see G, Lines With Other Classes and Within This Class, above)
102, Ammunition and Explosives, subclass 202.4 for semiconductor fuse shunts and subclass 220 for silicon controlled rectifier ignition or detonation switch devices. (see B, Lines With Other Classes and Within This Class, above.)
116, Signals and Indicators, digest 35 for electroluminescent dials. (see B, Lines With Other Classes and Within This Class, above.)
117, Single-Crystal, Oriented-Crystal, and Epitaxy Growth Processes; Non-Coating Apparatus Therefor, for processes and non-coating apparatus for growing therein-defined single-crystal of all types of materials, including those which may be suitable as or to produce an active solid-state device. Class 118 generally provides for coating apparatus, including single-crystal (e.g., epitaxy) coating means. (class providing for methods of making, cleaning, coating, etc., active solid-state devices, See Lines With Other Classes and Within This Class, D)
118, Coating Apparatus, subclass 900 for semiconductor vapor doping. (class providing for methods of making, cleaning, coating, etc., active solid-state devices, See Lines With Other Classes and Within This Class, D)
123, Internal-Combustion Engines, 650 for ignition systems with power supplies having diode and transistor features. (see B, Lines With Other Classes and Within This Class, above.)
134, Cleaning and Liquid Contact With Solids, subclass 1.2, 1.3, and 902 for semiconductor wafer cleaning. (class providing for methods of making, cleaning, coating, etc., active solid-state devices, See Lines With Other Classes and Within This Class, D, above)
136, Batteries: Thermoelectric and Photoelectric, 203 for Peltier effect device; subclasses 200+ for batteries which generate electricity under the action of heat (thermoelectric); and subclasses 243+ for batteries which generate electricity under the action of light, such as photovoltaic batteries, some of these batteries utilize potential barrier layers. (class providing for active solid-state electronic devices structures with a specified use.)
148, Metal Treatment, 33 for PN type barrier layer stock material treatment and numerous digests concerning treatment of semiconductor materials, dopants, and active solid-state electronic devices. (class providing for methods of making, cleaning, coating, etc., active solid-state devices, See
Lines With Other Classes and Within This Class, D, above)
148, Metal Treatment, digest 171 for metal treatment involving varistors. (see G, Lines With Other Classes, above)
165, Heat Exchange, 80.2 and 104.33 for electrical device or component heat exchangers. (Class providing for subcombination subject matter used as component part of active solid-state electronic devices. See Lines with Other Clases and Within This Class, F, above)
178, Telegraphy, subclass 117 for coherer type AC systems. (see B, Lines With Other Classes and Within This Class, above.)
178, Telegraphy, subclass 117 for coherer type AC systems. (see G, Lines With Other Classes and Within This Class, above)
194, Check-Actuated Control Mechanisms, 216 for value accumulator having solid-state circuitry. (see B, Lines With Other Classes and Within This Class, above.)
174, Electricity: Conductors and Insulators, subclasses 15.1-16.3 for fluid cooling of electrical conductors or insulator; subclasses 52.1+ for housings with electric devices or mounting means; and subclasses 250-268 for printed circuit devices. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
204, Chemistry: Electrical and Wave Energy, 400 for active solid-state devices used in measuring and testing involving electrolytic analysis. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
204, Chemistry: Electrical and Wave Energy, subclass 192.25 for semiconductor coating, forming, or etching by sputtering. (class providing for methods of making, cleaning, coating, etc., active solid-state devices, See Lines With Other Classes and Within This Class, D, above)
216, Etching a Substrate: Processes, subclass 16 for active solid state devices involved in an etching process. (class providing for methods of making, cleaning, coating, etc., active solid-state devices, See Lines With Other Classes and Within This Class, D, above)
219, Electric Heating, subclass 501 for automatic regulation or control means for heating devices which include semiconductor, e.g., transistor, means. (see B, Lines With Other Classes and Within This Class, above.)
228, Metal Fusion Bonding, subclass 123 for processes of bonding metal to semiconductor-type material and subclasses
179+ for processes of bonding electrical device (e.g., semiconductor) joints. (class providing for methods of making, cleaning, coating, etc., active solid-state devices, See Lines With Other Classes and Within This Class, D, above)
250, Radiant Energy, subclass 492.2 for irradiation of semiconductor devices. (class providing for methods of making, cleaning, coating, etc., active solid-state devices, See Lines With Other Classes and Within This Class, D, above)
250, Radiant Energy, subclass 338.4 for infrared responsive semiconductor devices, subclasses 370.01-370.15 for invisible radiant energy responsive semiconductor devices; subclass 371 for invisible radiant energy responsive methods using semiconductor devices; subclass 492.2 for irradiation of semiconductor devices; subclasses 552 and 553 for photocell circuits and apparatus involving solid-state light sources; subclasses 211 for photocells including photosensitive junctions; and subclasses 208.1-208.6 for plural photosensitive elements, including arrays. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
264, Plastic and Nonmetallic Article Shaping or Treating: Processes, subclass 272.11 for electrical component encapsulating processes, including subclass 272.17 for encapsulating semiconductor or barrier layer device. (class providing for methods of making, cleaning, coating, etc., active solid-state devices, See Lines With Other Classes and Within This Class, D, above)
252, Compositions, subclass 62.3 for barrier layer device compositions, e.g., N-material, P-material and, subclasses 500+ for electrically conductive or emissive compositions. (Class providing for materials used in active solid-state devices, Lines With Other Classes and Within This Class, C, above)
273, Amusement Devices: Games, digest 24 for luminescent devices. (see B, Lines With Other Classes, above.)
307, Electrical Transmission or Interconnection Systems, 401 for nonlinear reactor systems which typically employ active solid-state devices; subclass 91 for magnetic or electrostatic field shielding; and subclasses 109+ for systems involving capacitors.
310, Electrical Generator or Motor Structure, subclass 303 for energy conversion devices employing pn semiconductor junction devices, and digest 3 for Hall effect generators and converters. (see B, Lines With Other Classes and Within This Class, above.)
313, Electric Lamp and Discharge Devices, 498 for electric lamp and discharge devices having solid-state luminescent
materials, including nominally recited luminescent semiconductor type materials; subclasses 329 and 367+ for mosaic electrodes; subclasses 366+ for semiconductor depletion layer type image pickup tubes; subclass 463 for electroluminescent cathoderay tube screens; subclasses 346 and 346 for photoemissive cathodes; and subclass 504 for solid-state organic phosphor material luminescent devices. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
315, Electric Lamp and Discharge Devices: Systems, subclass 12.1 for secondary emissive stage in a cathoderay tube; subclass 407 for a deflection coil circuit including a diode; subclass 408 for deflection coil circuits including a solid-state switch; and digest 7 for starting and control circuits using transistors. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
323, Electricity: Power Supply or Regulation Systems, 229 for power supply or regulation systems using a diode in shunt with a source or load; subclasses 237+, 254, 257, 258, 263, 265+, and 292 for output level devices employing three or more terminal semiconductor devices; subclass 300 for input level devices or systems employing three or more terminal semiconductor devices; subclasses 311+ for self-regulating systems employing three or more terminal semiconductor devices; subclasses 325+, 339, 343, and 349+ for external or operator controlled systems employing three or more terminal semiconductor devices; subclass 360 for superconductor type transformers or inductors; digest 902 for device with optical coupling to a semiconductor; and digest 907 for temperature compensation of a semiconductor. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
318, Electricity: Motive Power Systems, subclass 681 for positional servomechanisms using solid-state servo amplifiers. (see B, Lines With Other Classes and Within This Class, above.)
315, Electric Lamp and Discharge Devices: Systems, subclass 311 for variable impedance device in automatic regulator in supply circuit of an electric lamp or discharge device. (see G, Lines With Other Classes and Within This Class, above)
318, Electricity: Motive Power Systems, subclass 662 for variable capacitor type positional servo systems and subclasses 788 and 792 for variable temperature impedance (e.g., resistor) elements in induction motor systems. (see G, Lines With Other Classes and Within This Class, above)
320, Electricity: Battery or Capacitor Charging or Discharging, appropriate subclass for an active solid-state device included in a charging or discharging circuit for a battery or capacitor. (see B, Lines With Other Classes,
above.)
322, Electricity: Single Generator Systems, digest 5 for Hall effect elements. (see B, Lines With Other Classes and Within This Class, above.)
323, Electricity: Power Supply or Regulation Systems, subclass 298 for output level responsive devices including a variable resistor. (see G, Lines With Other Classes and Within This Class, above)
324, Electricity: Measuring and Testing, 765 for diode, SCR and transistor testing and subclasses 244+ for magnetometers, many of which employ active solid-state devices, e.g., subclasses 248 (thin film), 251 (Hall plate) and 252 (semiconductor type solid-state or magneto resistive). (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
327, Miscellaneous Active Electrical Nonlinear Devices, Circuits, and Systems, appropriate subclasses for miscellaneous nonlinear circuits utilizing an active device. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
327, Miscellaneous Active Electrical Nonlinear Devices, Circuits, and Systems, 185 for a stable state circuit utilizing an electron tube and a transistor and subclasses 568+ for a miscellaneous negative resistance circuit. (see B, Lines With Other Classes and Within This Class, above.)
329, Demodulators, subclass 370 for diode demodulators and subclass 371 for coherer type demodulators. (see B, Lines With Other Classes and Within This Class, above.)
329, Demodulators, subclass 370 for diode demodulators and subclass 371 for coherer type demodulators. (see G, Lines With Other Classes and Within This Class, above)
330, Amplifiers, subclass 145 for diode type variable impedances for signal channel controlled by a separate control path and subclasses 282+ for semiconductor amplifier devices with gain control means and feedback means acting as a variable impedance.
330, Amplifiers, subclass 4.9 for semiconductor type parametric amplifiers; subclass 183 for DC interstage coupling with as nonlinear device; and subclasses 250+ for semiconductor amplifying devices. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
331, Oscillators, subclass 51 for semiconductor type cascade or tandem connected oscillators and subclasses 107-117 for solid-state active element oscillators. (class employing
active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
331, Oscillators, 36 for AFC devices using particular frequency control means, including reactance devices (e.g., variable capacitors) and subclass 177 for voltage sensitive capacitor type frequency adjusting means. (see G, Lines With Other Classes and Within This Class, above)
332, Modulators, subclass 105, 116, 135+, 146, 152, 168, and 178 for modulators with discrete semiconductor devices (subclass 136 includes varactors). (see B, Lines With Other Classes and Within This Class, above.)
332, Modulators, subclass 105, 116, 135+, 146, 152, 168, and 178 for modulators with discrete semiconductor devices (subclass 136 includes varactors). (see G, Lines With Other Classes and Within This Class, above)
333, Wave Transmission Lines and Networks, subclass 263 for variable impedance devices connected in circuit with a long line element or component. (see G, Lines With Other Classes and Within This Class, above)
333, Wave Transmission Lines and NetWorks, subclass 103 and 104 for branched circuits with switching means having semiconductor operating means; subclass 165 for frequency or time domain filters using charge transfer devices; subclasses 216 and 217 for negative impedance devices; subclass 247 for semiconductor mounts for strip type long line elements; and subclass 99 for super conductive devices. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
334, Tuners, subclass 66 and 69 for series tuned circuits with variable impedance elements.
334, Tuners, subclass 15 for semiconductor reactance tuning circuits. (see B, Lines With Other Classes and Within This Class, above.)
338, Electrical Resistors, subclass 1 for coherer type resistors, subclass 22 for semiconductor type thermistors, and subclass 32 for magnetic field responsive devices, including Hall effect types and super conductive types. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
338, Electrical Resistors, subclass 1 for coherer type resistors; subclass 22 for semiconductor type thermistors; and subclass 32 for magnetic field responsive devices, including Hall effect types and superconductive types. (see G, Lines With Other Classes and Within This Class, above)
343, Communications: Radio Wave Antennas, subclass 745 for antennas with variable reactance tuning; subclass 750 for
adjustable lumped reactance antenna tuning; and subclass 861 for adjustable impedance matching network leadins. (see G, Lines With Other Classes and Within This Class, above)
340, Communications: Electrical, subclass 598 for barrier layer thermal sensors in condition responsive device; subclass 815.03 for a visual indicator using a light emitting diode; and subclasses 825.79-825.96 for selective systems comprising matrix elements, e.g., light emitting diodes. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
341, Coded Data Generation or Conversion, 133 for analog-to-digital conversion with particular solid-state devices; subclass 150 for digital to analog conversion using charge coupled devices or switched capacitances; and subclass 172 for analog to digital conversion using charge transfer devices. (see B, Lines With Other Classes and Within This Class, above.)
345, Computer Graphics Processing, Operator Interface Processing, and Selective Visual Display Systems, 30 for selective visual display systems which may employ active solid-state device light sources, including subclasses 44 and 82 for visual display systems having solid-state light emitters. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
348, Television, 272 and 294+ for solid-state image sensors in television cameras and subclasses 800+ for electroluminescent video display with solid-state scanned matrix. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
358, Facsimile and Static Presentation Processing, subclass 482 and 483 solid-state picture generators, including charge coupled devices. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
359, Optics: Systems (Including Communication) and Elements, subclass 248 for semiconductor polarization type light modulators and subclasses 321+ for modulators having significant chemical composition or structure. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
361, Electricity: Electrical Systems and Devices, subclass 2 for solid-state switch type arc suppressors; subclasses 98, 100, and 101 for current fault responsive sensors involving semiconductor active solid-state devices; subclasses 196+ for semiconductor time delay devices; subclass 205 for threshold devices including SCR thyratrons; subclasses 275.1+ for
electrical, e.g., fuse element for electrolytic capacitors; subclasses 277+ for variable capacitor not involving active solid-state devices; subclasses 525 for solid electrolytic capacitors with significant semiconductor; subclasses 679+ for cooling devices, housings, supports, electrical contacts, etc., for diverse electrical components; subclass 421 for lead frames; and subclasses 523+ for solid electrolytic capacitors. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
361, Electricity: Electrical Systems and Devices, subclass 188 for variable impedance condition responsive devices for relay or solenoid safety or protection; and subclasses 277+ for variable electrostatic capacitors. (see G, Lines With Other Classes and Within This Class, above)
361, Electricity: Electrical Systems and Devices, subclass 421 for lead frames. (Class providing for subcombination subject matter used as component part of active solid-state electronic devices. See Lines with Other Clases and Within This Class, F, above)
362, Illumination, subclass 84 for light source or light source support and luminescent material and subclass 800 (cross-reference art collection) for light emitting diode light sources. (see B, Lines With Other Classes and Within This Class, above.)
363, Electric Power Conversion Systems, 10 for combined phase and frequency conversion using a semiconductor device converter, and subclasses 13-147 for current conversion devices many of which explicitly call for semiconductor active solid-state devices, and subclasses 159-163 for frequency conversion using semiconductor type devices. (see B, Lines With Other Classes and Within This Class, above.)
364, Electrical Computers and Data Processing Systems, subclass 490 and 491 for design and analysis of integrated circuits. (see B, Lines With Other Classes and Within This Class, above.)
365, Static Information Storage and Retrieval, 52 for hardware, including shields, for storage elements; subclass 71 for negative resistance; and subclass 72 for transistor or diode interconnection arrangement; subclass 96 for fusible link storage elements; subclasses 103-105 for semiconductive semipermanent read only systems; subclasses 106+ for systems involving radiant energy, including subclasses 109-115 for photoconductive, electroluminescent, amorphous, semiconductive and diode devices; subclasses 129+ for systems using a particular element, including subclasses 154-188 for systems using particular elements including active solid-state devices; subclasses 185.01+ for floating gate memory storage (e.g., flash memory); and subclasses 208 and 212 for semiconductive differential (e.g., thermal) noise suppression means in read/write circuits. (class employing
active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
367, Communications, Electrical: Acoustic Wave Systems and Devices, 140 for signal transducers which may be active solid-state devices, and including support structures, diaphragm, and pressure compensation means. (see B, Lines With Other Classes and Within This Class, above.)
368, Horology: Time Measuring Systems or Devices, subclass 83 for solid body light emitters, e.g., diodes; subclasses 86 and 87 for transistorized pulse transforming means; subclasses 56+ for solid-state oscillating time base circuits; and subclasses 239+ for optical display devices, including subclass 241 for solid-state, e.g., LED light emitting displays. (see B, Lines With Other Classes and Within This Class, above.)
369, Dynamic Information Storage or Retrieval, subclass 44.12 for optical servo systems having solid-state optical elements; subclasses 121+ for light sources, including solid-state light source; subclass 145 for semiconductive information handling transducers. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
372, Coherent Light Generator, subclasses 43-50 for semiconductor layers and subclass 75 for semiconductor optical laser pump devices. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
374, Thermal Measuring and Testing, subclass 178 for barrier layer (e.g., semiconductor junction) heat sensors and subclasses 183+ for current modifying sensors. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
377, Electrical Pulse Counters, Pulse Dividers, or Shift Registers: Circuits and Systems, subclasses 57-63 for charge transfer device systems; subclass 74 for input circuits involving field-effect transistors; subclass 79 and 117 for transfer means including a field effect transistor; and subclass 93 for superconductive elements. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
378, X-Ray or Gamma Ray Systems or Devices, subclass 104 for X-ray source power supplies with specified rectifier. (see B, Lines With Other Classes and Within This Class, above.)
379, Telephonic Communications, subclass 294 for semiconductor line finders. (see B, Lines With Other Classes, above.)
381, Electrical Audio Signal Processing Systems and Devices, subclass 100 for crossover filters with active devices and subclass 175 for semiconductor junction microphones. (see B, Lines With Other Classes and Within This Class, above.)
388, Electricity: Motor Control Systems, subclasses 917-920 for thyristor or SCR devices or control circuit elements and subclass 926 for a specific feedback control or device which controls a solid-state device in a motor circuit.
388, Electricity: Motor Control Systems, subclass 807 for variable impedance type field control circuits and subclasses 855+ for selectable or variable impedance armature control devices. (see G, Lines With Other Classes and Within This Class, above)
427, Coating Processes, 58, especially 62, 63, 66, 74-76, 79-81, 96-99, 100, and 101-103 for electrical product produced by coating processes. (class providing for methods of making, cleaning, coating, etc., active solid-state devices, See Lines With Other Classes and Within This Class, D, above)
428, Stock Material or Miscellaneous Articles, subclass 620 for composite metallic stock having a semiconductor component, subclasses 690 and 691 for fluorescent, phosphorescent or luminescent inorganic layer composites; subclasses 917 for electroluminescent material; and subclasses 928-931 for materials with special properties, including magnetic properties, electrical contact features and superconductivity. (Class providing for materials used in active solid-state devices, Lines With Other Classes and Within This Class, C, above)
430, Radiation Imagery Chemistry: Process, Composition, or Product Thereof, subclasses 56-96 for radiation sensitive compositions or products; subclass 139 for luminescent imaging process, composition or product; and subclass 900 for donor-acceptor complex photoconductors. (Class providing for materials used in active solid-state devices, Lines With Other Classes and Within This Class, C, above)
430, Radiation Imagery Chemistry: Process, Composition, or Product Thereof, subclasses 56-96 for radiation sensitive compositions or products; subclass 139 for luminescent imaging process, composition or product; and subclass 900 for donor-acceptor complex photoconductors. (class providing for methods of making, cleaning, coating, etc., active solid-state devices, See Lines With Other Classes and Within This Class, D, above)
438, Semiconductor Device Manufacturing: Process, for (a) combined operations (steps) for producing a semiconductor substrate having a junction, usually between p-type and n-type material or (b) a unit operation involving semiconductor material, not elsewhere provided; see the search notes therein. (class providing for methods of
making, cleaning, coating, etc., active solid-state devices, See Lines With Other Classes and Within This Class, D, above)
439, Electrical Connectors, appropriate subclasses for features related or analogous to electrical contact or housing features of active solid-state devices, e.g., 271 for sealing elements, or subclasses 449+ for stress relief means for conductor to terminal joint. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes and Within This Class, A, above)
455, Telecommunications, subclass 253.1 for semiconductor gain, level or volume control; subclass 291 for receivers having a wave collector with coupling to a stage of the receiver using an active device, and subclass 333 for transistorized or integrated circuit type frequency conversion structure or circuitry. (see B, Lines With Other Classes and Within This Class, above.)
455, Telecommunications, subclass 261 and 262 for variable reactance, e.g., variable capacitance type automatic local oscillator control devices. (see G, Lines With Other Classes and Within This Class, above)
505, Superconductor Technology: Apparatus, Material, Process, 150 for high temperature (T[subscrpt]c[end subscrpt] > 30 K) superconducting devices, and particularly subclasses 161 and 162 for bolometers or SQUIDs, subclasses 190+ for Josephson junctions, per se, and subclasses 191+ for other thin film solid-state devices; and pertinent cross-reference art collections, including subclasses 831+, for static information storage and retrieval system or device; subclasses 857+ for nonlinear solid-state device, system, or circuit; subclasses 873+ for active solid-state devices; subclass 883 for housing and mounting assemblies with plural diverse electrical components; subclasses 884+ for conductors; and subclasses 900+ for heat exchangers. (see B, Lines With Other Classes and Within This Class, above.)
505, Superconductor Technology: Apparatus, Material, Process, 150 for high temperature (T[subscrpt]c[end subscrpt] > 30 K) superconducting devices, and particularly subclasses 161 and 162 for bolometers or SQUIDs, subclasses 190+ for Josephson junctions, per se, and subclasses 191+ for other thin film solid-state devices; and pertinent cross-reference art collections, including subclasses 831+, for static information storage and retrieval system or device; subclasses 857+ for nonlinear solid-state device, system, or circuit; subclasses 873+ for active solid-state devices; subclass 883 for housing and mounting assemblies with plural diverse electrical components; subclasses 884+ for conductors; and subclasses 900+ for heat exchangers. (Class providing for materials used in active solid-state devices, Lines With Other Classes and Within This Class, C, above)
600, Surgery, 486 and 505 for active solid-state devices inserted inside a body and used for measuring and testing. (class employing active solid-state devices in electronic circuits. See Lines With Other Classes, A, above)
708, Electrical Computers: Arithmetic Processing and Calculating, subclass 190 for integrated circuit type digital computers.
902, Electronic Funds Transfer, subclass 26 for identification, means with a semiconductor chip, e.g., a smart card. (see B, Lines With Other Classes and Within This Class, above.)
D10, Measuring, Testing or Signalling Instruments, subclass 77 for transistor testers. (see B, Lines With Other Classes and Within This Class, above.)
D13, Equipment for Production, Distribution or Transformation of Energy, appropriate subclass for semiconductor, transistor or integrated circuit energy conversion or transformation. (see B, Lines With Other Classes and Within This Class, above.)

GLOSSARY:
ACCEPTOR IMPURITY
An atom or ion different from or foreign to, but present in, a semiconductor material and which has insufficient valence electrons to complete the normal bonding arrangement in the semiconductor crystal structure. An acceptor impurity accepts an electron from an adjacent atom to create a hole. Acceptor impurities are also referred to as p-type impurities. Common acceptor impurities in silicon or germanium are boron, gallium, and indium.
ACTINIDES
Ac, Th, Pa, U, Np, Pu, Am, Cm, Bk, Cf, E, Fm, Mv, No, Lw.
ALKALI METALS
Li, Na, K, Rb, Cs, Fr.
ALKALINE-EARTH METALS
Ca, Sr, Ba, Ra.
ACTIVE solid-state ELECTRONIC DEVICE
An electronic device or component that is made up primarily of solid materials, usually semiconductors, which operates by the movement of charge carriers - electrons or holes - which undergo energy level changes within the material and can modify an input voltage to achieve rectification, amplification, or switching action. Active solid-state
electronic devices include diodes, transistors, thyristors, etc., but exclude pure resistors, capacitors, inductors, or combinations solely thereof. The latter class of devices is characterized as passive.
ALLOY JUNCTION
A fused junction produced by combining one or more elemental impurity metals with a semiconductor. Typical alloyed junctions include indium- germanium and aluminum-silicon.
ALLOY TRANSISTOR
A transistor in which the emitter-base and collector-base junctions are alloy junctions.
AVALANCHE BREAKDOWN
A sudden change from high dynamic electrical resistance to very low dynamic resistance in a reverse biased semiconductor device, e.g., a reverse biased junction between p-type and n-type semiconductor materials, wherein current carriers are created by electrons or holes which have gained sufficient speed to dislodge valence electrons. Avalanche breakdown can cause structural damage to a semiconductor device.
AXIAL LEAD
A wire lead coming from the end of and along the axis of a resistor, capacitor, or other component.
BACK BONDED
The bonding of active chips to a substrate using the back of the chip opposite the side containing active solid-state devices.
BALL BOND
A bond formed by a round, ball-shaped lead on a semiconductor device.
BALLISTIC TRANSPORT DEVICE
An active solid-state electronic device in which an active layer is present through which carriers* pass, wherein the active layer is thinner than the mean free path of the carriers* in the material in that layer, so that carriers* can pass through the layer without scattering. Carriers* are typically injected into the ballistic transport layer as "hot" carriers*, having an energy, in the case of electrons, substantially greater than the minimum of the conduction band*, or in the case of holes, substantially lower than the maximum of the valence band. Ballistic electron injectors include heterojunctions, tunnel barriers, and punchthrough (e.g., planar doped or camel) barriers.
BAND GAP
The difference between the energy levels of electrons bound to their nuclei (valence electrons) and the energy levels that allow electrons to migrate freely (conduction electrons). The band gap depends on the particular semiconductor involved.
BARRIER REGION OR LAYER
A region which extends on both sides of a semiconductor junction in which all carriers are swept away from the junction region. The region is depleted of carriers. This is also referred to as a depletion region.
BARRITT DIODE
Barrier injection transit time diode. A bipolar or device in which a type of breakdown known as punchthrough occurs and wherein the punchthrough structure device is operable at microwave frequencies. In bipolar transistors a direct current path is formed from emitter to collector due to the formation of a depletion region throughout the base region and charge carriers from the emitter punch through to the collector. Carriers flowing from the emitter to the collector take a controlled time to pass through the depletion layer, leading to a controlled delay in current after a voltage is applied, and effective negative impedance.
BASE REGION
The region between the emitter and collector of a bipolar transistor into which minority carriers are injected by the emitter.
BASE CURRENT
The electrical current that flows in the base terminal of a bipolar transistor.
BEAM LEADS
Flat, metallic leads which extend beyond the edges of a chip component like wooden beams extend from a roof overhang. Beam leads are used to interconnect a component to film circuitry.
BIAS
A direct current or voltage applied to an active solid-state device that establishes certain operating characteristics of the device.
BI-FET
An active solid-state electronic device that contains both
bipolar and field effect transistors.
BILATERAL
A characteristic of an active solid-state electronic device that permits it to support current flow in opposite directions.
BINARY COMPOUND
A substance that always contains the same two elements in a fixed atomic ratio.
BIPOLAR
An active solid-state electronic device in which both positive and negative current carriers are used to support current flow.
BIPOLAR TRANSISTOR
An active solid-state electronic device with a base electrode and two or more junction electrodes in which both positive and negative current carriers are used to support current flow.
BLOCH WAVELENGTH
The effective wavelength of electrons in a semiconductor crystal, sometimes referred to as a wave packet or wave function. It can be an order of magnitude larger than the de broglie wavelength of electrons having the same energy.
BONDING AREA
The area, defined by the extent of a metallization land or the top surface of a terminal, to which a lead is or is to be bonded.
BONDING PAD
A metallized area to which an electrical connection is to be made. It is also called a bonding island or a controlled collapse chip connection.
BONDING WIRE
Fine wire for making electrical connections in hybrid circuits between various bonding pads on the semiconductor device substrate and device terminals or substrate lands.
BREAKDOWN
A sudden change from high dynamic electrical resistance to a very low dynamic resistance in a reverse biased semiconductor device, e.g., a reverse biased junction between p-type and n-type semiconductor materials, wherein reverse current
increases rapidly for a small increase in reverse applied voltage, and the device behaves as if it had negative electrical resistance.
BREAKDOWN POINT/VOLTAGE
The voltage value at which breakdown occurs.
BREAKOVER
The start of current flow in a silicon controlled rectifier.
BUCKET BRIGADE DEVICE
A charge transfer device in which only a portion of the charge carriers (electrons or holes) at each storage site are transferred to the next storage site.
BUMP CONTACT
A term used to describe, typically, solder bumps on a chip or substrate which are found on only one side of the chip or substrate as, for example, on a flip-chip.
BULK-CHANNEL CCD
A charge coupled device in which charge is stored and transferred below the surface of the device.
BULK-EFFECT DEVICE
An active solid-state device made up of a semiconductor material whose electrical characteristics and electronic properties are exhibited throughout the entire body of the material, rather than in just a localized region thereof, e.g., the surface.
BURIED CHANNEL CCD
See BULK-CHANNEL CCD.
CB JUNCTION
The collector-base junction of a bipolar transistor.
CAPACITOR
A component used in electrical and electronic circuits which stores a charge of electricity, usually for very brief periods of time, with the ability to rapidly charge and discharge. A capacitor is usually considered a passive component since it does not rectify, amplify, or switch and because charge carriers do not undergo energy level changes therein, although some active solid-state devices function as voltage variable capacitors.
CARRIER
A mobile free electron or hole.
CARRIER CONCENTRATION
The number of electrical charge carriers in a given volume, usually a cubic centimeter, of semiconductor material.
CELL
An individual integrated circuit element located on a large, or master chip of, semiconductor material.
CHANNEL
A path for conducting current between a source and drain of a field effect transistor.
CHANNEL LENGTH EFFECTS
Operating characteristics of FETs which depend on the length (distance between source and drain) of the channel regions. Such effects include switching speed change and threshold voltage change with channel length change.
CHANNEL WIDTH EFFECTS
Operating characteristics of FETs which depend on the width (horizontal distance perpendicular to channel length and parallel to upper surface of device) of the channel. Such effects include conductance and threshold voltage change with channel width change.
CHANNEL STOP
Means for limiting channel formation in a semiconductor device by surrounding the affected area with a ring of highly doped, low resistivity semiconductor material. In a field effect transistor, it is a region of highly doped material of the same type as the lightly doped substrate used to prevent leakage paths along the chip surface from developing. Also referred to as "chanstop."
CHANNEL PINCH-OFF REGION
The location in a current channel portion of a field effect transistor (FET) where the current is reduced to a minimum value due to its diameter being reduced to a minimum.
CHARACTERISTIC CURVE
A graph showing the relationship between two or more changing parameters, e.g., current and voltage of an electronic device.
CHARGE CARRIER
A mobile conduction electron or hole in a semiconductor.
CHARGE CONFINEMENT
Restriction of electrical charge carriers, e.g., electrons or holes, to specified locations, e.g., by quantum wells, gate electrode potentials, etc.
CHARGE-COUPLED DEVICE
A charge transfer device in which all carriers (electrons or holes) are transferred from one storage site to the next upon application of a shifting voltage.
CHARGE INJECTION DEVICE
A field effect device in which storage sites for packets of electric charge are induced at or below the surface of an active solid-state device by an electric field applied to the device and wherein carrier potential energy per unit charge minima are established at a given storage site and such charge packets are injected into the device substrate or into a data bus. This type device differs from a charge transfer device in that, in the latter, charge is transferred to adjacent charge storage sites in a serial manner, whereas, in a charge injection device, the charge is injected in a non-serial manner to the device substrate or to a data bus.
CHARGE TRANSFER DEVICE
A semiconductor device in which discrete packets of electrical charge are transferred from one location to another. Examples of charge transfer devices include charge-coupled devices (CCDs) and bucket-brigade devices (BBDs).
CHIP
A single crystal substrate of semiconductor material on which one or more active or passive solid-state electronic devices are formed. A chip may contain an integrated circuit. A chip is not normally ready for use until packaged and provided with external connectors.
CHIP CARRIER
A package with terminals, for solid-state electronic devices, including chips which facilitates handling of the chip during assembly of the chip to other electronic elements.
CHIP COMPONENT
A circuit element (active or passive) for use in microelectronics. Besides integrated circuits, the term includes diodes, transistors, resistors, and capacitors.
CIRCUIT
A number of devices interconnected in a one or more closed paths to perform a desired electrical or electronic function.
CLADDING BARRIER
A higher band gap material which encases a lower band gap material that defines the walls of a quantum well.
CMOS
See COMPLEMENTARY METAL OXIDE SEMICONDUCTOR.
COHERENCE LENGTH
The typical distance an electron can travel before it is scattered (e.g., by a phonon, a defect, or an impurity).
COHERER
A term which encompasses both active and passive type devices, the passive type being a resistor whose resistance decreases when subjected to a high frequency signal, and the active type being a rectifier which is made up of active solid-state particles which conduct and rectify current when connected into a cohesive element but which loses that characteristic when the particles are separated (e.g., by shaking a container in which the particles are located).
COLLECTOR
That end region of a bipolar transistor which forms one of the main current regions and which is reverse biased in operation with respect to the base region.
COLLECTOR CURRENT
The current which flows through the terminal of the collector region of a bipolar transistor.
COLLECTOR DIFFUSION ISOLATION (CDI)
An electrical isolation technology used for bipolar devices which employs an epitaxial layer, which forms transistor base regions, laid on a substrate of the same conductivity type (p or n) as the epitaxial layer, with an opposite conductivity type region, more heavily doped than the epitaxial base layer and located between the layer and the substrate, forming the collector and isolating the transistor from the substrate.
COMMON-BASE CONFIGURATION
A bipolar transistor in which the base region is common to both the input and output circuit. This is also known as a grounded-base bipolar transistor circuit.
COMMON-COLLECTOR CONFIGURATION
A bipolar transistor in which the collector region is common to both the input and output circuit. It is also known as an emitter-follower bipolar transistor circuit.
COMMON-DRAIN CONFIGURATION
A unipolar transistor in which the drain region is common to both the input and output circuit.
COMMON-EMITTER CONFIGURATION
A bipolar transistor in which the emitter region is common to both the input and output circuit. It is also known as a grounded-emitter bipolar transistor circuit.
COMMON- or GATE-CONFIGURATION
A unipolar transistor in which the gate region is common to both input and output circuits.
COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS)
Both n-type and p-type metal oxide semiconductor devices, e.g., transistors, formed on the same substrate.
COMPONENT
An electronic device - active or passive - which has distinct electrical characteristics and has terminals for connection to other components to form a circuit.
COMPOUND
A homogeneous material which has definite proportions of chemically combined atoms or ions.
CONCENTRATION GRADIENT
A difference in dopant concentration (p- or n-type) from one position to another in a semiconductor.
CONDUCTION BAND
A partially filled energy band in which electrons can move freely, permitting a material to carry electric current where electrons are the current carriers.
CONDUCTION ELECTRONS
In a conductor or n-type semiconductor, outer shell electrons that are bound so loosely that they can move freely in the conduction band of a solid material under the influence of an electric field.
CONDUCTIVITY
The ability of a material to conduct electric current. Its converse is resistivity.
CONDUCTOR
A material which offers comparatively little resistance to the flow of current.
CONDUCTOR SPACING
The distance between adjacent edges (not centerline to centerline) of isolated conductive patterns in a conductor layer.
CONNECTOR AREA
That portion of metallized conductors used for providing external electrical connections from a component to a chip or other component.
CONTACT
The parts of a conductor designed to touch or be touched by other such parts of an electrical conductor to carry current to or from the conductor.
CONTACT WINDOW
An opening in an insulating layer to expose an underlying conductor to permit electrical contact thereto. It is also called a via hole.
COVALENT BONDING
The sharing of electrons by atoms in which each atom contributes one of a pair of electrons shared by another atom and forming a bond between those two atoms.
CRYOSAR
An active solid-state device which operates at cryogenic temperatures, i.e., at temperatures at or below 77 degrees Kelvin, by avalanche breakdown caused by impact ionization of device impurities.
CRYSTAL
A solid substance whose atoms are arranged with periodic geometric regularity, called a lattice.
CRYSTAL DEFECT
Any nonuniformity in a crystal lattice. There are four categories of crystal defects: (1) point defects, (2) line defects, (3) area defects, and (4) volume defects. Point defects include any foreign atom at a regular lattice site
(substitutional site) or between lattice sites (interstitial site), anti-site defects in compound semiconductors, e.g., Ga in As or As in Ga, missing lattice atoms, and host atoms located between lattice sites and adjacent to a vacant site (Frenkel defects). Line defects, also called edge dislocations, include extra planes of atoms in a lattice. Area defects include twins or twinning (a change in crystal orientation across a lattice) and grain boundaries (a transition between crystals having no particular positional orientation to one another. Volume defects include precipitates of impurity or dopant atoms caused by volume mismatch between a host lattice and precipitates.
CUTOFF
A minimum value of voltage or current applied to an active device which stops the device from operating in a particular manner.
DE BROGLIE WAVELENGTH
The wavelength of a particle, based on L.V. de Broglie's theory that particles exhibit wavelike characteristics.
DEEP DEPLETION
The condition in which a depletion layer formed in a MOS active device due to voltage applied to the gate electrode of the device, is deeper than the maximum depth at which inversion would normally be expected to occur at room temperature in a semiconductor device at the surface closest to the gate electrode, without formation of an inversion layer.
DEEP GROOVE ISOLATION
Electrical isolation of adjacent devices in a single monolithic semiconductor chip by grooves extending deeply into and below the surface of the chip between the devices.
DEEP-LEVEL CENTERS
Energy levels that can act as traps located in the forbidden band of a semiconductor material that are not near the conduction or valence band edges.
DEGENERATION
Doping of a semiconductor to such an extent that the Fermi level lies within the conduction band (N+ semiconductor) or within the valence band (P+ semiconductor). Also, in circuit applications, negative feedback between two or more active solid-state devices.
DEPLETION LAYER
See DEPLETION REGION.
DEPLETION MODE
The operation of a field-effect transistor having appreciable channel conductivity for zero gate- source voltage and whose channel conductivity may be increased or decreased according to the polarity of the applied gate-source voltage, by changing the gate-to-source voltage from zero to a finite value, resulting in a decrease in the magnitude of the drain current.
DEPLETION REGION
The region extending on both sides of a reverse biased semiconductor junction in which free carriers are removed from the vicinity of the junction. It is also called a space charge region, a barrier region, or an intrinsic semiconductor region.
DEVICE (ACTIVE)
The physical realization of an individual electrical element in a physically independent body which cannot be further divided without destroying its stated function. Examples are transistors, pnpn structures, and tunnel diodes.
DIE
A tiny piece of semiconductor material, separated from a semiconductor slice, on which one or more active electronic components are formed. Sometimes called a chip.
DIE BOND
Attachment of a semiconductor chip to a substrate or chip carrier or package, usually with an epoxy, eutectic, or solder alloy.
DIFFUSED JUNCTION
A junction between two different conductivity regions within a semiconductor and which is formed by diffusion of appropriate impurity atoms into the material.
DIFFUSED TRANSISTOR
A transistor in which the emitter and collector junctions are formed by diffusion of dopant atoms into the semiconductor material.
DIFFUSION
(1) The movement of carriers from a region of concentration to one of lower concentration; (2) a process of adding impurities to a semiconductor material to change its electrical characteristics.
DIFFUSION BARRIER
An obstacle to the diffusion of charge carriers in an active solid-state device.
DIFFUSION CURRENT
Current caused by charge carriers diffusing from a volume of high carrier concentration to a volume of lower carrier concentration in a solid-state material.
DIFFUSION LENGTH
In a homogeneous semiconductor material, the average distance minority carriers move during their lifetime (i.e., between generation and recombination).
DIODE
An electronic device which has two terminals and an asymmetrical or nonlinear voltage-current characteristic.
DIODE ISOLATION
A technique in which a high electrical resistance between an integrated circuit element and its substrate is achieved by surrounding the element with a reverse biased pn junction.
DIP (DUAL-IN-LINE PACKAGE)
A chip carrier or package consisting of a plastic or ceramic body with two rows of vertical leads in which a semiconductor integrated circuit is assembled and sealed. The leads are typically inserted into a circuit board and secured by soldering.
DIRECT BAND GAP SEMICONDUCTOR
A semiconductor material in which an electron transition from the conduction to the valence band, or vice versa, does not require a change in crystal momentum for the electron. Gallium arsenide is a direct band gap semiconductor material.
DISCRETE CIRCUIT
A circuit which has an individual identity and which is fabricated prior to installation, or is separately packaged and is not part of an integrated circuit.
DISLOCATION
A region in a crystal in which the atoms are not arranged in a perfect lattice-like structure. See CRYSTAL DEFECT for examples of crystal defects/dislocations.
DMOSFET
Depletion type metal oxide semiconductor field effect transistor. Such devices are normally in the on condition with no applied gate voltage.
DONOR IMPURITY
An element which when added to a semiconductor provides unbound or free electrons to the semiconductor which may serve as current carriers. Typically, donors are atoms which have more valence electrons than the atoms of the semiconductor material into which they are introduced in small quantities as an impurity or dopant. Since such donor impurities have more valence electrons than the semiconductor, a semiconductor doped with donor impurities is an n-type semiconductor.
DOPANT
An impurity added to a semiconductor material to change its electrical conductivity or other characteristics. N-type (negative) dopants, such as phosphorus, for a group IV semiconductor such as silicon typically come from group V of the periodic table. When added to silicon n-type dopants create a material that contains conduction electrons. P-type (positive) dopants, such as boron, for a group IV semiconductor such as silicon, typically come from group III and result in holes.
DOPING PROFILE
The point to point concentration throughout a semiconductor of an impurity atom doped into the semiconductor.
DOUBLE-DIFFUSED MOS (DMOS)
A metal oxide semiconductor having diffused junctions in which successive diffusions of different impurity types are made in the same well-defined region of the semiconductor.
DRAIN
The electrode of a field effect transistor which receives charge carriers which pass through the transistor channel from the source electrode.
DRAIN CURRENT
The flow of charge carriers in the drain region of a field effect transistor.
DRAIN-SOURCE SATURATION CURRENT
The maximum amount of current carried by the drain of a field-effect transistor when the gate- source voltage equals zero volts.
DRIFT CURRENT
Current produced in a solid-state electronic device by charge carriers (e.g., holes or electrons) drifting in the direction of an applied electric field.
DUAL GUARD-BAND ISOLATION
A type of electrical isolation of functional elements of an integrated circuit comprised of two distinct unused areas of chip surface area adjacent to the elements desired to be electrically isolated.
DUAL-IN-LINE (DIP)
See DIP.
DYNAMIC RANDOM ACCESS MEMORY (DRAM)
solid-state memory in which the information decays over time and needs to be periodically refreshed.
EB JUNCTION
Emitter base junction in a bipolar transistor.
ELECTRON
The negatively charged particle in an atom that orbits the nucleus in specific energy levels.
ELECTRON FLOW
Movement of electrons from a source of negative potential to a positive potential.
ELECTRON-HOLE PAIR
A positive charge carrier (i.e., hole) and a negative charge carrier (i.e., electron) considered together as being created or destroyed as part of one and the same event.
EMITTER
The region of a bipolar junction transistor from which charge carriers flow through the emitter-base junction into the base region of the device.
EMITTER CURRENT
The amount of current flowing from the emitter across the emitter-base junction into the base region of the device.
E-MOSFET
Enhancement mode metal oxide semiconductor device. See ENHANCEMENT MODE and MOSFET.
ENERGY LEVELS
The possible energy values that an atom or molecule or subatomic particle (e.g., an electron) can have.
ENHANCEMENT MODE
The operation of a field effect transistor which has a channel formed therein between its source and drain regions and which normally does not conduct current through its channel with zero voltage applied to its gate electrode. Voltage of the correct polarity will accumulate minority carriers in the channel to permit conduction of current in the channel, thus turning on the transistor.
EPITAXY
The growth of a crystal of one substance on the surface of a crystal of the same or another substance so that the crystal lattice of the base substance controls the orientation of the atoms in the grown crystal.
EPITAXIAL LAYER
An added layer of crystal that takes on the same crystalline orientation as the substrate crystal.
ESAKI DIODE
A heavily doped pn junction diode where conduction occurs through the junction potential barrier due to a quantum mechanical effect even though the carriers which tunnel through the potential barrier do not have enough energy to overcome the potential barrier. Esaki tunneling involves a tunneling barrier formed by a macroscopic depletion layer between n-type and p-type regions. It does not involve a resonant tunneling barrier using controlled quantum confinement, a layer located between junctions, nor a thin superlattice layer.
EXCESS CARRIERS
Charge carriers present in a semiconductor in excess of those present in thermal equilibrium.
EXTRINSIC SEMICONDUCTOR
A semiconductor whose charge carrier concentration and, therefore, electrical properties depend on impurity, atoms introduced therein.
FACE BONDED
A chip mounting technique wherein semiconductor chips are provided with small mounting pads, turned face down, and bonded directly to conductors on a substrate.
FANNED LEADS
Leads placed through a package wall at closer intervals than normal and radiated (fanned) out on the exterior of the package until a desired center-to-center lead spacing is achieved.
FET
Acronym for field effect transistor.
FIELD EFFECT TRANSISTOR
A unipolar transistor in which current carriers are injected at a source terminal and pass to a drain terminal through a channel of semiconductor material whose conductivity depends largely on an electric field applied to the semiconductor from a control electrode. There are two main types of FET, a junction FET and an insulated-gate FET. In the junction FET, the gate is isolated from the channel by a pn junction. In an insulated-gate FET, the gate is isolated from the channel by an insulating layer, so that the gate and channel form a capacitor with the insulating layer as the capacitor dielectric.
FIELD OXIDE
A thin (on a macroscopic scale) film made up of an oxide of a material which overlies a device substrate to reduce parasitic capacitive coupling between conductors overlying the oxide and the substrate or devices below the oxide layer (e.g., in the substrate).
FLAT PACK
An integrated circuit package with leads extending from it in the same plane as that of the package. It has a low profile.
FLIP-CHIP
A term which describes the situation wherein a semiconductor device which has all terminations on one side thereof in the form of bump contacts, has a passivated surface and has been flipped over and attached to a matching substrate.
FLOATING DIFFUSION
A region of a semiconductor device in which impurity atoms have been doped and which is electrically floating, that is, has no direct electrical connection.
FLOATING GATE
A gate electrode that is electrically floating, that is, has no direct electrical connection.
FOOTPRINT
Also called a land pattern. It is a combination of lands used to mount a surface mount component. Metal pads on a substrate surface are arranged in the same pattern as the leads or pads on the component itself.
FORBIDDEN ENERGY BAND/REGION/GAP
The energy band of a material which is located between a solid material's conduction and valence bands. It is defined by the amount of energy that is needed to release an electron from its valence band to its conduction band. Electrons cannot exist in this gap. They are either below it, and bound to an atom, or above it, and able to move freely.
FORWARD BIAS
An external voltage applied in the conducting direction of a pn junction. A positive potential is connected to the p-type material and a negative potential to the n-type semiconductor material.
FORWARD BREAKOVER POTENTIAL
The value of positive terminal voltage at which a regenerative device (e.g., a silicon controlled rectifier), with its gate circuit open, becomes conductive.
FORWARD CURRENT
The current which flows across a semiconductor junction when a forward bias is applied across the junction.
FOUR-LAYER DIODE
A semiconductor diode with three junctions and only two terminals connected to the outer layers forming the junctions. This includes two terminal pnpn thyristors.
FOUR-PHASE CCD
A charge coupled device having four electrode sets and four gate voltages.
FOUR-SIDE LEAD LAYOUT
The situation wherein there are leads through all four sides of an integrated circuit package.
FRAME TRANSFER CCD
A charge coupled device area imager array with a separate image area, storage area, and read-out register area, the storage area being located between the image area and the readout area. This is distinguished from an
interline-transfer CCD in which the sensing and storage/readout function areas are located next to each other.
FREE ELECTRON
An electron not bound to a particular atom, but free to circulate among the atoms of a solid material.
GAIN
The ratio of the magnitude of the electrical output of a device to the magnitude of its electrical input.
GALLIUM ARSENIDE
A semiconducting chemical compound which is often used in active solid-state devices.
GATE
The control electrode or region of a field effect transistor, located between the source and drain electrodes, and regions thereof.
GATE ARRAY
A repeating geometric arrangement of groups of active solid-state devices, each group being connectable into a logic circuit, in one integrated, monolithic semiconductor chip.
GATE CHARGE
The electrical charge on a gate electrode.
GATE CONTROLLED DIODE
A three terminal semiconductor diode with the ability to be turned on or off by a pulse applied to its gate electrode.
GATE TRIGGER CURRENT
The amount of current needed to commence gate current flow in a four layer semiconductor device (e.g., a thyristor).
GATE TRIGGER VOLTAGE
The amount of voltage needed to begin gate current flow in a four layer semiconductor device (e.g., a silicon controlled rectifier).
GERMANIUM
A semiconductor material used in active solid-state devices.
GULL-WING
The name given to lead configurations of some surface mounted devices. Gull wings extend from the side of a component package and have an L-shaped bend at component ends, which extend down to the substrate surface and away from the component.
GUNN DIODE
A diode in which electrons under the influence of sufficiently high electric fields are transferred between energy valleys of different momentum in the conduction band of the active semiconductor device material or holes under the influence of sufficiently high electric fields are transferred between energy valleys of different momentum in the valence band of the active semiconductor device material. A Gunn diode does not normally have a pn junction and cannot be used as a rectifier.
GUNN EFFECT
An inter valley transfer effect wherein electrons under the influence of sufficiently high electric fields are transferred between energy valleys of different momentum in the conduction band of the active semiconductor device material, or holes under the influence of sufficiently high electric fields are transferred between energy valleys of different momentum in the valence band of the active semiconductor device material.
HALL EFFECT DEVICE
An active solid-state device in which a current is flowing and is in a magnetic field perpendicular to the current, and in which a voltage is produced that is perpendicular to both the current flow direction and the magnetic field direction.
HALOGENS
F, Cl, Br, I, At.
HEADER
A slab-like or flat plug-in base for a package that is designed to be used with a cover or lid.
HEAT SINK
Devices used to absorb or transfer heat away from heat sensitive devices or device components.
HEAVY METALS
Metals other than light metals - see LIGHT METALS.
HETEROJUNCTION /HETEROINTERFACE
An interface between two dissimilar semiconductor materials. For example, one material may by InAs and the other may be InAlAs, or one material may be GaAs and the other material may be GaAlAs.
HETEROSTRUCTURE
See HETEROJUNCTION.
HIGH ELECTRON (HOLE) MOBILITY TRANSISTOR (HEMT)
A heterojunction field effect transistor with impurity ions located on the side of the hetero junction with lower affinity for the charge carriers (holes or electrons) injected at the source that pass to the drain via a channel adjacent the hetero junction.
HOLDING CURRENT
The minimum current needed to maintain a generative type active solid-state device (e.g., a thyristor) in an "on" or conducting condition.
HOLE
An empty energy level in the valence band of a semiconductor crystal which exhibits properties of a real particle and can act as a mobile positive charge carrier.
HOLE FLOW
The current in a semiconductor material due to the movement of holes therein.
HOMOJUNCTION
An interface between regions of opposite polarity in the same semiconductor material.
HOT CARRIER DIODE
A diode in which electrons (or holes) have energies greater than those that are in thermal equilibrium with the material of at least one of the regions forming the diode. Schottky barrier diodes typically have "hot carriers" (hot electrons) injected into the metal from the semiconductor.
HOT ELECTRONS
See HOT CARRIER DIODE.
HYBRID CIRCUIT
A small printed circuit having miniature components, which may include passive components (resistors, capacitors, and inductors, deposited on a printed circuit board. A "hybrid circuit" is NOT an integrated circuit, and is not
classifiable in this class.
IMPURITY
A foreign material present in a semiconductor crystal, such as boron or arsenic in silicon, which is added to the semiconductor to produce either p-type or n-type semiconductor material, or to otherwise result in material whose electrical characteristics depend on the impurity dopant atoms.
INDIRECT BAND GAP SEMICONDUCTOR
A semiconductor material in which a change in semiconductor crystal momentum for an electron is required when it moves from the conduction band to the valence band and vice versa. Silicon is an indirect band gap semiconductor.
INSULATED-GATE FIELD EFFECT TRANSISTOR (IGFET)
A unipolar transistor with source, gate, and drain regions and electrodes, in which conduction takes place in a channel controlled by action of the voltage applied to the gate electrode of the device, in which the gate electrode is separated from the channel by an insulator layer.
INSULATOR
A material which has a high resistance to the flow of electric current. It has such low electrical conductivity that the flow of current therethrough can usually be neglected.
INTEGRATED CIRCUIT
See MONOLITHIC DEVICE (e.g., IC) as contrasted to HYBRID CIRCUIT.
INTRINSIC CONCENTRATION
The number of minority carriers in a semiconductor due to thermal generation of electron-hole pairs.
INTRINSIC SEMICONDUCTOR
A pure semiconductor, i.e., one with no impurity atoms introduced therein.
INVERSION
A condition in a semiconductor material in which the concentration of minority carriers exceeds the concentration of majority carriers.
INVERSION LAYER/CHANNEL
A region in a semiconductor material in which the
concentration of minority carriers exceeds the concentration of majority carriers.
IRON GROUP METALS
Fe, Co, Ni.
ISOLATION
Prevention of the flow of electric current between electronic component parts of a solid-state electronic device.
ISOPLANAR CMOS
A semiconductor device in which relatively thick regions of silicon dioxide, recessed into the semiconductor surface, are used to electrically isolate device areas and prevent parasitic device formation. More commonly called LOCOS CMOS.
ISOPLANAR ISOLATION
A type of electric isolation in which relatively thick regions of silicon dioxide, recessed into the semiconductor surface, are used to electrically isolate device areas and prevent parasitic device formation. More commonly called LOCOS ISOLATION.
J-LEAD
A rolled-under, J-shaped configuration of some surface mounted component leads.
JUNCTION
A joining of two different semiconductors or of a semiconductor and a metal at an interface. Types of junctions include HETEROJUNCTIONS, SCHOTTKY BARRIER JUNCTIONS, and PN JUNCTIONS.
JUNCTION BARRIER
The opposition to the diffusion of majority carriers across a pn junction due to the charge of the fixed donor and acceptor ions.
JUNCTION CAPACITANCE
The capacitance across a pn junction. It depends on the width of the depletion layer, which increases with increased reverse bias voltage across the junction.
JUNCTION GATE FIELD EFFECT TRANSISTOR (JFET)
See FIELD EFFECT TRANSISTOR.
JUNCTION ISOLATION
Electrical isolation of devices on a monolithic integrated circuit chip using a reverse biased junction diode to establish a depletion layer that forms the electrical isolation between devices.
JUNCTION RESISTANCE
The electrical resistance across a semiconductor PN junction.
LAND
The conductive areas, normally metal patterns, on a semiconductor integrated circuit, which form part of the contacts and interconnections between components on the integrated circuit.
LAND PATTERN
A combination of lands on an integrated circuit.
LANTHANIDE ELEMENTS
La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho,Er, Tm, Yb, Lu.
LATCHING/LATCHED/LATCHUP
The state or condition of a regenerative feedback device, e.g., a thyristor, in which the device remains ON when the initializing signal is removed.
LCCC
An abbreviation for a leadless ceramic chip carrier which is a hermetically-sealable ceramic package in which an integrated chip can be placed to create a surface mounted component. It has pads around its perimeter for connection to a substrate.
LEAD
The conductor brought out from a component.
LEAD FRAME
A metal frame which provides support for an integrated circuit chip or die as well as electrical leads to interconnect the integrated circuit on the die or chip to other electrical components or contacts.
LEAKAGE CURRENT
Unwanted current flow.
LIFETIME
The average time interval between the introduction of and recombination of minority charge carriers in a semiconductor.
LIGHT EMITTING DIODE (LED)
Junction diodes which give off light when energized.
LIGHT METALS
Alkali metals, alkaline-earth metals, Be, Al, Mg.
LINE DEFECT
A planar crystal defect (e.g., an extra plane of atoms in a crystal). It is also called an edge dislocation.
LOCAL OXIDE CMOS (LOCMOS)
Local oxide complementary metal oxide semiconductor structure which features oxide isolation which is recessed into the semiconductor surface.
LOCOS
(Local Oxidation of Silicon) Patterns of oxide isolation which are recessed into the semiconductor surface. Sometimes also called isoplanar, ROX (Recessed Oxide Isolation), or planox.
LUMINESCENCE
Emission of light by directly converting some other type of energy. Types include thermoluminescence, photoluminescence, cathodoluminescence, and electroluminescence. It includes fluorescence and phosphorescence. Active solid-state luminescent devices are semiconductors which operate via injection luminescence. Active devices include pn junctions (including heterojunctions), Schottky barrier junctions, metal-insulator-semiconductor (MIS) structures, and high speed traveling domains, e.g., Gunn domain and acoustoelectric wave generated domains; whereas passive solid-state electroluminescent devices (phosphors) are insulators which operate in an intrinsic luminescence phenomena, i.e., where an applied electric field generates free carriers (there being no free carriers in an insulator to be accelerated by an applied field unless the field also generates them) to initiate the light emission mechanism.
MAJORITY CARRIER
The predominant charge carrier in a semiconductor. Electrons are majority carriers in n-type semiconductors. Holes are majority carriers in p-type semiconductors.
MAJORITY CURRENT
Current caused by the flow of majority carriers.
MASTERSLICE ARRAY/MASTERCHIP
A substrate that contains active and passive electronic components in a predetermined pattern which may be connected into different logic or analog circuits.
MBM JUNCTION
Active solid-state devices having metal-barrier-metal layer junctions.
METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET)
See INSULATED GATE FIELD EFFECT TRANSISTOR.
METAL-GATE FET
A field effect transistor having a gate conductor made of metal, rather than polycrystalline semiconductor material.
METALLIZATION
A single or multilayer film pattern of electrically conductive material deposited on a substrate to interconnect electronic components, or the metal film on the bonding area of a substrate which becomes part of the bond and performs both an electrical and a mechanical function.
METALS
Elements other than non-metals. See NON-METALS.
MIM DIODE
A junction diode with a thin insulating layer of material sandwiched between two metallic surface layers which operates as a tunneling (direct or Fowler-Nordheim type) diode.
MINORITY CARRIER
The less predominant charge carrier in a semiconductor. In a p-type semiconductor, minority carriers are electrons, whereas in n-type semiconductor material, minority carriers are holes.
MINORITY CURRENT
The current caused by flowing minority carriers.
MIS
Acronym for metal-insulator-semiconductor. Typically active solid-state devices with MIS technology have a silicon dioxide layer formed on a single crystal silicon substrate. A polysilicon conductor layer is formed on the oxide.
MOBILITY
The facility with which carriers move through a semiconductor when subjected to an applied electric field. Electrons and holes typically have different mobilities in the same semiconductor.
MODFET
Acronym for a modulation doped field effect transistor. A high speed semiconductor FET in which dopant atom containing semiconductor layers alternate with non-doped semiconductor layers, so that the carriers (electrons or holes) resulting from the dopant atoms can travel in the undoped material, so that there is little scattering of carriers from dopant atoms. Typically, the dopant atoms are in semiconductor material having a lower carrier affinity than the undoped layers, to facilitate carrier spill over into the undoped layers. Such a structure may typically constitute a superlattice. See also HIGH ELECTRON MOBILITY TRANSISTOR (HEMT).
MODULATION DOPING
Spatial modulation of dopant atoms in a semiconductor crystal.
MONOLITHIC DEVICE (e.g., IC)
A device in which all components are fabricated on a single chip of silicon. Interconnections among components are provided by means of metallization patterns on the surface of the chip structure, and the individual parts are not separable from the complete circuit. External connecting wires are taken out to terminal pins or leads.
MSM
Acronym for metal-semiconductor-metal semiconductors. Active solid-state semiconductor devices having a semiconductor layer sandwiched between two layers of metal.
MULTILAYER METALLIZATION
Two or more layers of interconnecting metallization patterns in a monolithic integrated circuit separated by insulator material except in interconnection areas.
N-TYPE SEMICONDUCTOR
An extrinsic semiconductor in which electron density exceeds hole density.
NDM
Negative differential mobility (e.g., Gunn effect)
intervalley active semiconductor devices wherein an applied electric field imparts energy to electrons or holes to permit them to jump to higher quantum electronic intervalley energy levels in which electrons have lowered electron mobility.
NEGATIVE RESISTANCE REGION
An operating region of an active solid-state electronic device in which an increase in applied voltage results in a decrease in output current.
NEGATIVE TEMPERATURE COEFFICIENT
The amount of reduction in a device parameter, such as capacitance or resistance, for each degree of device operating temperature.
NMOS
N-channel metal oxide semiconductor devices which use electrons as majority carriers.
NOBLE GASES
He, Ne, Ar, Kr, Xe, Rn.
NON-METALS
H, B, C, Si, N, P, O, S, Se, Te, noble gases, halogens.
NPN TRANSISTOR
A transistor in which the base is made of p-type material and both source and drain are made of n-type semiconductor material.
N-CHANNEL FET
A field effect transistor that has an n-type conduction channel.
N-TYPE SEMICONDUCTOR
An extrinsic semiconductor having n-type dopant atoms, e.g., atoms with one more valence electron than the host atoms.
ORGANIC SEMICONDUCTOR
A semiconductor compound in which the molecule is characterized by two or more carbon atoms bonded together, one atom of carbon bonded to at least one atom of hydrogen or halogen (i.e., chlorine, fluorine, bromine, iodine) or one atom of carbon bonded to at least one atom of nitrogen by a single or double bond.
(1) Note. Exceptions to this rule include HCN, CN-CN, HNCO, HNCS, cyanogen halides, cyanamide, fulminic acid, and metal
carbides. These are not regarded as organic semiconductor materials. Also, note that graphite and diamond are not regarded as organic semiconductors since they are not compounds; silicon carbide is not regarded as organic.
OXIDE ISOLATION
Electrical isolation of semiconductor electronic devices in a monolithic integrated circuit by an oxide (e.g., silicon oxide).
PACKAGE
A container, case, or enclosure for protecting a solid-state electronic device from the environment.
PAD
(1) The portion of a conductive pattern on a solid-state electronic device for making external connection thereto; (2) the portion of a conductive pattern on a chip or a printed circuit board designed for mounting or attaching a substrate or solid-state active electronic device.
PARASITIC CURRENT
Unintended current which flows between devices in an integrated circuit, or which flows between device regions and isolation regions.
PARASITIC DEVICES/CHANNELS
Junctions forming unintended active solid-state devices which interconnect intended active solid-state devices, which unintended devices are not designed to carry current flow.
PARASITIC THYRISTOR ACTION
Unwanted active solid-state device formation in which four adjacent complementary doped regions not designed to act as an active solid-state device, lack sufficient isolation therebetween and act as a thyristor. Parasitic thyristor action is typically a problem encountered in CMOS integrated circuits.
PARASITIC TRANSISTOR ACTION
Unwanted transistor formation in an integrated circuit structure.
PASSIVE DEVICE
A solid-state electronic device or component in which charge carriers do not change their energy levels and that does not provide rectification, amplification, or switching, but which does react to voltage and current. Examples are pure resistors, capacitors, and inductors.
P-CHANNEL
A conduction path, made of p-type semiconductor material, located between the source and drain of a field effect device.
PERISTALTIC CCD
See BULK CHANNEL CCD.
PERMISSIBLE ENERGY LEVEL
An energy level in a conduction or valence band which a charge carrier (electron or hole) may have.
PHOTODIODE
A diode in which charge carriers are created by light which illuminates the diode junction. It is a photovoltaic as well as a photoconductive device.
PHOTOTRANSISTOR
A transistor having no base terminal and in which charge carriers are created by light which illuminates its collector-base junction.
PHOTOVOLTAIC CELL
An active solid-state device with a pn junction that generates a voltage in response to light impinging on the junction.
PINCH-EFFECT RESISTOR
A monolithic integrated circuit resistor having a layer of one conductivity type, typically a P-layer formed at the same time as integrated circuit bipolar transistor base regions, which is thinned by an inset region of opposite conductivity type, typically an N-layer formed at the same time as integrated circuit bipolar transistor emitter regions.
PINCH-OFF
The condition in a depletion mode field effect transistor wherein the conducting channel is depleted of majority carriers and is thereby pinched off, no path remaining for the source-to-drain majority carrier (e.g., electron) flow.
PIN DIODE/DEVICE
A diode having an intrinsic semiconductor (i.e., one with no dopants) sandwiched between a p-type layer and an n-type layer. The depletion region (the intrinsic semiconductor layer) thickness can be tailored to optimize quantum efficiency for use as a photo diode or frequency response for
use as a microwave diode.
PIN-GRID ARRAY
A semiconductor chip package having leads in the form of pins arranged in columns and rows.
PLANAR TRANSISTOR
A bipolar transistor in which the emitter base and collector regions terminate at the same plane surface without indentations in or protrusions from the surface. Hence, the emitter and base regions form dish shaped portions extending into the semiconductor from the common surface.
PLUG-IN PACKAGE
An electronic package for an active solid-state device in which the lead pins are perpendicular to the mounting area of the substrate, as contrasted with a flat package in which the leads are in the same plane as the substrate.
P-MOSFET
A metal oxide semiconductor field effect transistor having p-type source and drain regions and a p-type conduction channel which may be formed by a p type doped region (depletion mode) or induced by a voltage on the gate (enhancement mode).
PN-JUNCTION
The interface and region of transition between p-type and n-type semiconductors.
PN-JUNCTION DIODE
A semiconductor device having two terminals connected to opposite type semiconductor materials with a junction therebetween and exhibiting a non-linear voltage-current characteristic, usually used for switching or rectification.
PNP TRANSISTOR
A bipolar transistor with a p type emitter, an n-type base and a p-type collector.
POINT DEFECT
A crystal defect occurring at a point in a crystal. Examples include, (1) a foreign atom incorporated into the crystal lattice at either a substitutional (regular lattice) site or interstitial (between regular lattice sites) site, (2) a missing atom in the lattice, or (3) a host atom located between regular lattice sites and adjacent to a vacancy (called a Frenkel defect).
POLYCRYSTALLINE
A material composed of more than one crystal.
POLYSILICON
A polycrystalline form of silicon.
POSITIVE CARRIER
A charge carrier which has a net positive charge (e.g., a hole).
POSITIVE IONS
Atoms which are missing a valence shell electron.
POTENTIAL BARRIER
The difference in electrical potential across a pn junction in a semiconductor.
POTENTIAL HILL
See POTENTIAL BARRIER.
POTTING
An embedding process in which an electronic component is placed in a can, shell, or other container and buried in a liquid dielectric polymer which subsequently changes to a solid material. The container is not removed from the finished part, and a release agent is not used. This process differs from casting - which involves a removable mold.
PRINTED CIRCUIT BOARD
A structure formed on one or more layers of electrically insulating material having electrical terminals and conductive material deposited thereon, in continuous paths, from terminal to terminal, to form circuits for electronic apparatus such as chips or substrates.
P-TYPE CONDUCTIVITY
Electrical conductivity associated with positive charge carriers (holes) in a semiconductor material.
P-TYPE SEMICONDUCTOR
An extrinsic semiconductor in which the hole density exceeds the conduction electron density.
PUNCHTHROUGH
Expansion of a depletion region* from one junction to another junction in an active solid-state device.
PURPLE PLAGUE
A brittle, inter metallic electrically conductive compound which has a purplish color and is formed when aluminum and gold, used as electrical contact materials in semiconductor electronic devices, contact each other and interact. It is usually considered undesirable because it breaks easily, reduces device reliability, and lowers product yield.
QUANTIZED STATES
Discrete energy levels due to the quantum mechanical properties of a material.
QUANTUM TRANSISTOR
Transistors whose operation is based on the properties of electrons confined in quantum wells - semiconductor films only a hundred or so angstroms thick sandwiched between high confining walls made of a second semiconductor material.
QUANTUM WELL
Semiconductor films only a hundred or so angstroms thick sandwiched between high confining walls made of a second material.
RARE EARTHS
Sc, Y, Lanthanides.
READ-OUT REGISTER
Gated semiconductor devices which receive and accumulate charges and make them available to an output device.
RECOMBINATION
The process by which excess holes and electrons in a semiconductor crystal recombine and and no longer function as charge carriers in the semiconductor. Basic recombination processes are band-to-band recombination which occurs when an electron in the conduction band recombines with a hole in the valence band, and trapping recombination which occurs when an electron or hole is captured by a deep energy level, such as produced by a deep level dopant, before recombining with an opposite conductivity type carrier.
REFRACTORY METALS
Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W.
RESISTIVITY
A measure of the resistance of a material to electric current. Resistivity is a bulk material property, measured
in ohm-cm.
RESONANT TUNNELLING DEVICE
A device that works on the principle of resonant electron (or hole) tunneling through a pair of matched potential barriers. This occurs when the energy of the electrons (or holes) matches that of a quantum energy level in the quantum well formed between the barriers.
REVERSE BIAS
A voltage applied across a semiconductor junction in the reverse direction, i.e., wherein a positive potential is connected to the n-type semiconductor and a negative potential is applied to the p-type semiconductor.
REVERSE BREAKDOWN VOLTAGE
The reverse bias voltage value at which electrical resistance drops appreciably and operating current sharply increases.
REVERSE CURRENT
The current flowing through a rectifying junction with a reverse voltage thereacross.
SATURATION
The current between the base and collector of a bipolar transistor when an increase in emitter to base voltage causes no further increase in the collector current.
SCATTERING CENTERS
The impurities (dopants) in semiconductors that cause electrons or holes flowing through the semiconductor to scatter. These reduce carrier mobility and represent a problem in quantum devices because they affect electron coherence length.
SCHOTTKY BARRIER
A metal to semiconductor interface in which the carrier affinity and doping level of the semiconductor are such that a rectifying junction is formed. Usually, minority carriers in the semiconductor do not significantly contribute to the current flowing in a device with such a barrier.
SCHOTTKY DIODE
A diode with a Schottky barrier.
SEMICONDUCTOR
A material whos