US 11,101,276 K1 (4,577th)
	Word line contact structure for three-dimensional memory devices and fabrication methods thereof
Jifeng Zhu; Zhenyu Lu; Jun Chen; Si Ping Hu; Xiaowang Dai; Lan Yao; Li Hong Xiao; A Man Zheng; Kun Bao; and Haohao Yang
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD.
Trial No. IPR2025-00228, Nov. 29, 2024
Inter Partes Review Certificate for Patent 11,101,276, issued Aug. 24, 2021, Appl. No. 16/865,056, May 1, 2020
Inter Partes Review Certificate issued Sep. 30, 2026