Class   365	STATIC INFORMATION STORAGE AND RETRIEVAL
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MAGNETIC BUBBLES

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. (1 indent ) Disposition of elements

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.. (2 indent ) Lattice

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. (1 indent ) Decoder

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. (1 indent ) Logic

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. (1 indent ) Rotating field circuits

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. (1 indent ) Detectors

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.. (2 indent ) Magnetoresistive

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.. (2 indent ) Hall effect

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.. (2 indent ) Optical

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. (1 indent ) Generators

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.. (2 indent ) By splitting

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. (1 indent ) Plural interacting paths

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.. (2 indent ) Closed loop

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... (3 indent ) Major-minor

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.. (2 indent ) With switch at interacting point

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... (3 indent ) Idler switch

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.. (2 indent ) Boundary

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. (1 indent ) Conductor propagation

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.. (2 indent ) Including A.C. signal

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.. (2 indent ) Three phase signals

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. (1 indent ) One's and zero's

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. (1 indent ) Plural direction propagation

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.. (2 indent ) Nonsequential

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. (1 indent ) Velocity

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.. (2 indent ) Turns

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. (1 indent ) Bias

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.. (2 indent ) Variable

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. (1 indent ) Strip domain

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. (1 indent ) In-plane field (nonrotating)

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. (1 indent ) Different size bubbles

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. (1 indent ) Multiple magnetic layer

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. (1 indent ) Magnetic storage material

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.. (2 indent ) Amorphous

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. (1 indent ) Guide structure

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.. (2 indent ) Ion implantation

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.. (2 indent ) Slots or rails

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.. (2 indent ) Zigzag

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.. (2 indent ) Overlays

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... (3 indent ) On opposite sides of storage medium

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... (3 indent ) Dots

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... (3 indent ) Wedges

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... (3 indent ) Chevrons

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... (3 indent ) Rectangular bars

185.01

FLOATING GATE

185.02

. (1 indent ) Disturbance control

185.03

. (1 indent ) Multiple values (e.g., analog)

185.04

. (1 indent ) Data security

185.05

. (1 indent ) Particular connection

185.06

.. (2 indent ) Segregated columns

185.07

.. (2 indent ) Cross-coupled cell

185.08

.. (2 indent ) With volatile signal storage device

185.09

.. (2 indent ) Error correction (e.g., redundancy, endurance)

185.1

.. (2 indent ) Extended floating gate

185.11

.. (2 indent ) Bank or block architecture

185.12

... (3 indent ) Parallel row lines (e.g., page mode)

185.13

... (3 indent ) Global word or bit lines

185.14

.. (2 indent ) Program gate

185.15

... (3 indent ) Weak inversion injection

185.16

.. (2 indent ) Virtual ground

185.17

.. (2 indent ) Logic connection (e.g., NAND string)

185.18

. (1 indent ) Particular biasing

185.19

.. (2 indent ) Multiple pulses (e.g., ramp)

185.2

.. (2 indent ) Reference signal (e.g., dummy cell)

185.21

... (3 indent ) Sensing circuitry (e.g., current mirror)

185.22

... (3 indent ) Verify signal

185.23

.. (2 indent ) Drive circuitry (e.g., word line driver)

185.24

.. (2 indent ) Threshold setting (e.g., conditioning)

185.25

.. (2 indent ) Line charging (e.g., precharge, discharge, refresh)

185.26

.. (2 indent ) Floating electrode (e.g., source, control gate, drain)

185.27

.. (2 indent ) Substrate bias

185.28

.. (2 indent ) Tunnel programming

185.29

.. (2 indent ) Erase

185.3

... (3 indent ) Over erasure

185.31

... (3 indent ) Nonsubstrate discharge

185.32

.... (4 indent ) Radiation erasure

185.33

... (3 indent ) Flash

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ANALOG STORAGE SYSTEMS

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. (1 indent ) Resistive

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. (1 indent ) Thermoplastic

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. (1 indent ) Magnetic

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ASSOCIATIVE MEMORIES

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. (1 indent ) Magnetic

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FORMAT OR DISPOSITION OF ELEMENTS

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HARDWARE FOR STORAGE ELEMENTS

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. (1 indent ) Shields

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. (1 indent ) Ground plane

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. (1 indent ) Magnetic

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.. (2 indent ) Spacers

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.. (2 indent ) Keeper

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.. (2 indent ) Slot

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.. (2 indent ) Embedded conductor

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.. (2 indent ) Air gap

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.. (2 indent ) Hairpin conductor

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.. (2 indent ) Permanent magnet

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INTERCONNECTION ARRANGEMENTS

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. (1 indent ) Optical

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. (1 indent ) Ferroelectric

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. (1 indent ) Magnetic

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.. (2 indent ) Plural diagonal

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.. (2 indent ) Tree

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.. (2 indent ) Crossover

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.. (2 indent ) Woven

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. (1 indent ) Negative resistance

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. (1 indent ) Transistors or diodes

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RECIRCULATION STORES

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. (1 indent ) Magnetic

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. (1 indent ) Stepwise

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. (1 indent ) Delay lines

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. (1 indent ) Plural paths

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PLURAL SHIFT REGISTER MEMORY DEVICES

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MAGNETIC SHIFT REGISTERS

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. (1 indent ) Bidirectional

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. (1 indent ) Two cells per bit

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. (1 indent ) SiPo/PiSo

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. (1 indent ) Core in transfer loop

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. (1 indent ) Continuous

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.. (2 indent ) Plated wire

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. (1 indent ) Thin film

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.. (2 indent ) Domain tip

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. (1 indent ) Logic

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. (1 indent ) Multiaperture cell

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.. (2 indent ) Ladder

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.. (2 indent ) With other type core

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. (1 indent ) Including delay means

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READ ONLY SYSTEMS (I.E.. SEMIPERMANENT)

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. (1 indent ) With override (i.e., latent images)

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. (1 indent ) Fusible

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. (1 indent ) Magnetic

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.. (2 indent ) Random core

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.. (2 indent ) Random wiring

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. (1 indent ) Resistive

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. (1 indent ) Inductive

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. (1 indent ) Capacitative

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. (1 indent ) Semiconductive

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.. (2 indent ) Transistors

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.. (2 indent ) Diodes

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RADIANT ENERGY

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. (1 indent ) Chemical fluids

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. (1 indent ) Liquid crystal

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. (1 indent ) Photoconductive and ferroelectric

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. (1 indent ) Electroluminescent and photoconductive

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. (1 indent ) Electroluminescent

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. (1 indent ) Photoconductive

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. (1 indent ) Amorphous

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. (1 indent ) Semiconductive

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.. (2 indent ) Diodes

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. (1 indent ) Plasma

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. (1 indent ) Ferroelectric

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. (1 indent ) Electron beam

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. (1 indent ) Color centers

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INFORMATION MASKING

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. (1 indent ) Polarization

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.. (2 indent ) Magneto-optical

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. (1 indent ) Bragg cells

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. (1 indent ) Diffraction

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.. (2 indent ) Holograms

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. (1 indent ) Thermoplastic

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. (1 indent ) Transparency

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. (1 indent ) Electron beams

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SYSTEMS USING PARTICULAR ELEMENT

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. (1 indent ) Three-dimensional magnetic array

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. (1 indent ) Two magnetic cells per bit

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. (1 indent ) Different size cores

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. (1 indent ) Cells of diverse coercivity

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. (1 indent ) Continuous cells

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.. (2 indent ) Elongated or bar-shaped cell

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... (3 indent ) Twisters

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... (3 indent ) Tubular

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... (3 indent ) Chain

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... (3 indent ) Plated wire

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. (1 indent ) Multiaperture cell

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.. (2 indent ) Aperture plate

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.. (2 indent ) Aperture with transverse axis

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... (3 indent ) Biax

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.. (2 indent ) Same size apertures

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. (1 indent ) Ferroelectric

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. (1 indent ) Electrets

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. (1 indent ) Persistent internal polarization (PIP)

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. (1 indent ) Resistive

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. (1 indent ) Capacitors

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.. (2 indent ) Inherent

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. (1 indent ) Molecular or atomic

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.. (2 indent ) Nuclear induction or spin echo

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. (1 indent ) Electrochemical

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. (1 indent ) Flip-flop (electrical)

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.. (2 indent ) Plural emitter or collector

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.. (2 indent ) Complementary

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. (1 indent ) Magnetostrictive or piezoelectric

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. (1 indent ) Magnetoresistive

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. (1 indent ) Negative resistance

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. (1 indent ) Superconductive

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.. (2 indent ) Thin film

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.. (2 indent ) Josephson

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. (1 indent ) Amorphous (electrical)

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. (1 indent ) Electrical contacts

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.. (2 indent ) Coherer

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.. (2 indent ) Relay

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. (1 indent ) Simulating biological cells

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. (1 indent ) Ternary

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. (1 indent ) Gunn effect

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. (1 indent ) Hall effect

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. (1 indent ) Magnetic thin film

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.. (2 indent ) Isotropic

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.. (2 indent ) Multiple magnetic storage layers

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. (1 indent ) Semiconductive

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.. (2 indent ) Diodes

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.. (2 indent ) Silicon on sapphire (SOS)

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.. (2 indent ) Bioplar and FET

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.. (2 indent ) Ion implantation

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.. (2 indent ) Plural emitter or collector

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.. (2 indent ) Four layer devices

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.. (2 indent ) Complementary conductivity

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.. (2 indent ) Insulated gate devices

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... (3 indent ) Charge coupled

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... (3 indent ) Variable threshold

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.. (2 indent ) Single device per bit

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.. (2 indent ) Three devices per bit

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.. (2 indent ) Four or more devices per bit

189.01

READ/WRITE CIRCUIT

189.02

. (1 indent ) Multiplexing

189.03

. (1 indent ) Plural use of terminal

189.04

. (1 indent ) Simultaneous operations (e.g., read/write)

189.05

. (1 indent ) Having particular data buffer or latch

189.06

. (1 indent ) Including signal clamping

189.07

. (1 indent ) Including signal comparison

189.08

. (1 indent ) Including specified plural element logic arrangement

189.09

. (1 indent ) Including reference or bias voltage generator

189.11

. (1 indent ) Including level shift or pull-up circuit

189.12

. (1 indent ) With shift register

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. (1 indent ) For complementary information

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. (1 indent ) Signals

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.. (2 indent ) Radio frequency

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.. (2 indent ) Strobe

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.. (2 indent ) Delay

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.. (2 indent ) Inhibit

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... (3 indent ) Sense/inhibit

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.. (2 indent ) Microwave

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.. (2 indent ) Transmission

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.. (2 indent ) Coincident A.C. signal with pulse

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. (1 indent ) Bad bit

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. (1 indent ) Testing

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. (1 indent ) Complementing/balancing

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. (1 indent ) Precharge

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. (1 indent ) Accelerating charge or discharge

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. (1 indent ) Flip-flop used for sensing

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. (1 indent ) Noise suppression

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.. (2 indent ) Differential sensing

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... (3 indent ) Semiconductors

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... (3 indent ) Magnetic

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.... (4 indent ) Reference or dummy element

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.. (2 indent ) Temperature compensation

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... (3 indent ) Semiconductor

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... (3 indent ) Magnetic

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.. (2 indent ) Particular wiring

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. (1 indent ) Optical

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.. (2 indent ) Holographic

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. (1 indent ) Electron beam

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. (1 indent ) Erase

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. (1 indent ) SiPo/PiSo

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. (1 indent ) Parallel read/write

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. (1 indent ) Serial read/write

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. (1 indent ) Data refresh

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. (1 indent ) Bridge

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. (1 indent ) Eddy current

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. (1 indent ) Minor loop

225.5

. (1 indent ) Including magnetic element

225.6

. (1 indent ) Having bipolar circuit element

225.7

. (1 indent ) Having fuse element

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POWERING

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. (1 indent ) Conservation of power

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. (1 indent ) Data preservation

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.. (2 indent ) Standby power

230.01

ADDRESSING

230.02

. (1 indent ) Multiplexing

230.03

. (1 indent ) Plural blocks or banks

230.04

.. (2 indent ) Alternate addressing (e.g., even/odd)

230.05

. (1 indent ) Multiple port access

230.06

. (1 indent ) Particular decoder or driver circuit

230.07

.. (2 indent ) Including magnetic element

230.08

. (1 indent ) Including particular address buffer or latch circuit arrangement

230.09

. (1 indent ) Combined random and sequential addressing

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. (1 indent ) Using selective matrix

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.. (2 indent ) Magnetic

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. (1 indent ) Sync/clocking

233.5

.. (2 indent ) Transition detection

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. (1 indent ) Optical

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.. (2 indent ) Page memories

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. (1 indent ) Counting

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. (1 indent ) Electron beam

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. (1 indent ) Cartesian memories

238.5

. (1 indent ) Byte or page addressing

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. (1 indent ) Sequential

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.. (2 indent ) Using shift register

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.. (2 indent ) Detectors

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. (1 indent ) Current steering

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.. (2 indent ) Diode

243.5

. (1 indent ) Including magnetic element

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