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Class Numbers & Titles | Class Numbers Only | USPC Index | International | HELP |
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Class 327 | MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS |
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1 | SPECIFIC SIGNAL DISCRIMINATING (E.G., COMPARING, SELECTING, ETC.) WITHOUT SUBSEQUENT CONTROL |
2 | By phase |
13 | By shape |
18 | By presence or absence pulse detection |
22 | By pulse noncoincidence |
23 | By pulse coincidence |
28 | By polarity |
31 | By pulse width or spacing |
32 | With shock-excited circuit |
33 | With sampling |
34 | Narrow pulse elimination or suppression |
35 | Separating by duration or gap (e.g., duty cycle, etc.) |
36 | Selection of a particular pulse width |
37 | Comparison by threshold or reference |
38 | With plural paths |
39 | By frequency |
40 | Comparison between plural inputs |
44 | With predetermined frequency selection |
47 | Frequency detection |
50 | By amplitude |
51 | With sensing amplifier |
58 | Maximum or minimum amplitude |
59 | Employing input compared to output |
60 | Employing input compared to reference derived therefrom |
61 | By diode-capacitor network |
62 | Maximum and minimum amplitude |
63 | Comparison between plural varying inputs |
64 | With logic or bistable circuit |
65 | Differential input |
68 | Input provides varying reference signal |
69 | With plural paths |
71 | Three or more inputs |
72 | Input signal compared to reference derived therefrom |
74 | Input signal compared to plural fixed references |
77 | Input signal compared to single fixed reference |
78 | Reference level crossover detecting |
80 | Reference determined by threshold of single circuit element |
82 | Plural sources of input signal |
83 | Temperature compensation |
84 | With bridge circuit |
85 | Inverting input or output |
86 | With transformer |
87 | Having feedback |
88 | With source as reference |
89 | With differential amplifier |
90 | Comparison between two characteristics of an input signal |
91 | Including details of sampling or holding |
97 | With logic or bistable circuit |
98 | By separating composite signal |
99 | Having selection between plural continuous waveforms |
100 | SIGNAL CONVERTING, SHAPING, OR GENERATING |
101 | Converting input current or voltage to output frequency |
102 | Converting input frequency to output current or voltage |
103 | Converting input voltage to output current or vice versa |
104 | Converting, per se, of an AC input to corresponding DC at an unloaded output |
105 | Synthesizer |
106 | Having stored waveform data (e.g., in ROM, etc.) |
107 | Having digital device (e.g., logic gate, flip-flop, etc.) |
108 | Current driver |
109 | Having semiconductive load |
110 | Having inductive load (e.g., coil, etc.) |
111 | Having capacitive load |
113 | Frequency or repetition rate conversion or control |
114 | Of output rectangular waveform |
117 | Frequency division |
119 | Frequency multiplication (e.g., harmonic generation, etc.) |
124 | By periodic switching (e.g., chopper, etc.) |
125 | Generating parabolic or hyperbolic output |
126 | Generating staircase output |
129 | Generating sinusoidal output |
130 | Generating trapezoidal output |
131 | Generating sawtooth or triangular output |
132 | With current source or current mirror |
133 | With distortion control (e.g., linearization, etc.) |
134 | With slope or duration control |
135 | Having digital element |
136 | Having particular delay or sync |
137 | Having feedback |
138 | Having temperature compensation |
139 | Having inductive load |
140 | With amplitude control |
141 | Synchronizing |
142 | Reset (e.g., initializing, starting, stopping, etc.) |
144 | Using multiple clocks |
145 | Having different frequencies |
146 | With feedback |
151 | With counter |
152 | With choice between multiple delayed clocks |
153 | With delay means |
154 | With feedforward |
155 | With feedback |
160 | With counter |
161 | With delay means |
162 | Having reference source |
164 | Generating rectangular (e.g., clock, etc.) or pulse waveform having random characteristic (e.g., random width, etc.) |
165 | Regenerating or restoring rectangular (e.g., clock, etc.) or pulse waveform |
166 | Having digital device (e.g., logic gate, flip-flop, etc.) |
167 | Having network providing particular mathematical function (e.g., integrator, etc.) |
168 | Having inductive device (e.g., transformer, etc.) |
169 | Having negative resistance device (e.g., tunnel diode, etc.) |
170 | Slope control of leading or trailing edge of rectangular (e.g., clock, etc.) or pulse waveform |
171 | Output pulses having opposite polarities |
172 | Rectangular (e.g., clock, etc.) or pulse waveform width control |
173 | Pulse narrowing |
174 | Pulse broadening |
175 | Duty cycle control |
176 | Having digital device (e.g., logic gate, flip-flop, etc.) |
177 | Having inductive device (e.g., transformer, etc.) |
178 | Rectangular (e.g., clock, etc.) or pulse waveform amplitude control |
181 | Electromagnetic pulse forming |
182 | Delay line or capacitor storage element charged or discharged through or by a relaxation oscillator type circuit to form pulse |
183 | Delay line or capacitor storage element charges or discharges through a tube to form pulse |
184 | Rectangular (e.g., clock, etc.) or pulse waveform generating by conversion from input AC (e.g., sine, etc.) wave |
185 | Particular stable state circuit (e.g., tristable, etc.) |
186 | Superconductive (e.g., cryogenic, etc.) |
187 | External effect device (e.g., light, heat, magnetic, or mechanical force sensitive devices, etc.) |
188 | Minority carrier storage effect |
190 | With transformer or saturable core device |
192 | Negative resistance transistor (e.g., unijunction, etc.) |
194 | Zener or capacitive diode |
195 | Negative resistance diode having "N"-shape characteristic on I-V plot (e.g., tunnel diode, backward diode, etc.) |
196 | Negative resistance diode having "S"-shape characteristic on I-V plot (e.g., four or more layer semiconductor device, etc.) |
197 | Convertible circuit (e.g., bistable to monostable, D-type to T-type, etc.) |
198 | Initializing, resetting, or protecting a steady state condition |
199 | Circuit having only two stable states (i.e., bistable) |
200 | Dynamic bistable |
202 | Master-slave bistable latch |
203 | Including field-effect transistor |
204 | Including multi-emitter or multi-collector bipolar transistor |
205 | Using hysteresis (e.g., Schmitt trigger, etc.) |
207 | Including diverse solid state devices (e.g., FET/bipolar, etc.) |
208 | Including field-effect transistor |
214 | Complementary transistors |
215 | Having at least two cross-coupling paths |
216 | JK type input |
217 | RS or RST type input |
218 | D type input |
219 | Particular device at input, output, or in cross-coupling path |
223 | Plural transistors of same conductivity type |
224 | With single semiconductor device |
225 | With logic element (e.g., NOR gate, etc.) |
226 | With single electron tube |
227 | Monostable |
231 | Phase shift by less than period of input |
232 | Dependent on frequency |
233 | Correction to specific phase shift |
234 | Dependent on variable controlled phase shifts |
235 | Dependent on multiple fixed phase shifts |
236 | By phase comparator or detector |
237 | Variable or adjustable |
238 | Quadrature related (i.e., 90 degrees) |
239 | Non-overlapping multiple outputs |
240 | Maintaining invariant amplitude |
241 | With counter or shift register |
243 | With feedback |
246 | With differential amplifier |
248 | With adder |
250 | With active time delay element |
252 | With passive time delay element |
254 | Quadrature related (i.e., 90 degrees) |
256 | Phase inversion (i.e., 180 degrees between input and output) |
258 | Multiple outputs |
260 | Producing AC power control |
261 | Having specific delay in producing output waveform |
262 | Including significant compensation (e.g., temperature compensated delay, etc.) |
263 | Delay interval set by rising or falling edge |
264 | Having specific active circuit element or structure (e.g., FET, complementary transistors, etc.) |
268 | Having specific passive circuit element or structure (e.g., RLC circuit, etc.) |
269 | Multiple outputs with plurality of delay intervals |
270 | Variable or adjustable |
271 | Including delay line or charge transfer device |
272 | Having specific active circuit element or structure(e.g., FET, complementary transistors, etc.) |
276 | Single output with variable or selectable delay |
277 | Including delay line or charge transfer device |
278 | Having specific active circuit element or structure (e.g., complementary transistors, etc.) |
283 | Having specific passive circuit element or structure (e.g., RLC circuit, etc.) |
284 | Including delay line or charge transfer device |
285 | Having specific active circuit element or structure (e.g., complementary transistors, etc.) |
290 | Having specific passive circuit element or structure (e.g., RLC circuit, etc.) |
291 | Clock or pulse waveform generating |
292 | Clock fault compensation or redundant clocks |
293 | With plural paths in network |
295 | Plural outputs |
298 | Single clock output with multiple inputs |
299 | Single clock output with single clock input or data input |
300 | With saturable inductance |
301 | With electron beam type tube |
302 | With storage diode |
303 | With rectifier |
304 | With inductive device (e.g., transformer, etc.) |
305 | With gas tube |
306 | Amplitude control |
307 | Baseline or DC offset correction |
308 | Variable attenuator |
309 | By limiting, clipping, or clamping |
310 | Transient or signal noise reduction |
311 | By filtering |
312 | By feedback limiting-clamping |
313 | Using 3 or more terminal type nonlinear devices only |
314 | Using diode type nonlinear devices only |
315 | Providing constant input/output amplitude level ratio |
317 | Distortion compensation |
318 | In input or output circuit |
323 | Feedback |
324 | By using diverse-type nonlinear devices |
325 | Using only diode active elements |
327 | Using only transistor active elements |
329 | With tuned circuit |
330 | With rectifier or nonlinear impedance |
331 | Maintaining constant level output |
333 | Interstage coupling (e.g., level shift, etc.) |
334 | SPECIFIC INPUT TO OUTPUT FUNCTION |
335 | By differentiating |
336 | By integrating |
337 | Having switched capacitance |
338 | With thermionic tube |
339 | With summing or counting |
340 | Single vacuum tube |
341 | With compensation |
342 | With transducer |
343 | With rectifier circuit |
344 | Including RC circuit |
345 | Having feedback |
346 | Exponential |
350 | Logarithmic |
354 | Absolute value |
355 | Combining of plural signals |
362 | With compensation |
363 | Having feedback |
364 | With vacuum tube |
365 | GATING (I.E., SWITCHING INPUT TO OUTPUT) |
366 | Superconductive (e.g., cryogenic, etc.) device |
367 | Josephson junction |
368 | Critical current control |
369 | External control (e.g., piezoelectric, light, etc.) |
372 | Inductive effect |
373 | Layout |
374 | Accelerating switching |
378 | Compensation for variations in external physical values (e.g., temperature, etc.) |
379 | Signal transmission integrity or spurious noise override |
380 | Preventing quick rise gating current (i.e., di/dt) |
381 | Preventing quick rise gating voltage (i.e., dv/dt) |
382 | Parasitic prevention or compensation (e.g., parasitic capacitance, etc.) |
383 | Ensuring fully conducting state |
384 | Switch noise signal |
387 | Control signal derived from or responsive to input signal |
389 | Insulated gate FET (e.g., MOSFET, etc.) |
392 | Delay controlled switch (e.g., fixed, single time of delay control, etc.) |
393 | With variable or multiple adjustable time of delay control (e.g., variable charge-discharge, on-delay/off-delay control, etc.) |
394 | With field-effect device |
395 | Propagation through plural delay devices or paths |
396 | With plural switching elements (e.g., sequential, etc.) |
397 | Including negative resistance device in delay circuit (e.g., unijunction transistor, etc.) |
398 | For predetermined time period |
399 | With field-effect device |
400 | Propagation through plural delay devices or paths |
401 | With plural switching elements (e.g., sequential, etc.) |
402 | Including negative resistance device in delay circuit (e.g., unijunction transistor, etc.) |
403 | Parallel controlled paths |
407 | Converging with plural inputs and single output |
415 | Diverging with single input and plural outputs |
419 | Utilizing three or more electrode solid-state device |
420 | Breakdown characteristic (e.g., punch-through, tunneling, etc.) |
423 | Bridge circuit |
425 | Bilateral transistor |
427 | Field-effect transistor |
428 | With silicon controlled rectifier (SCR) |
429 | Four or more electrode solid-state device |
430 | JFET (i.e., junction field-effect transistor) |
432 | With bipolar transistor |
434 | Insulated gate FET (e.g., MOSFET, etc.) |
438 | Four or more layer device (e.g., thyristor, etc.) |
439 | Bipolar transistor circuit configuring SCR device |
440 | GTO (i.e., gate turnoff) |
441 | Plural or combined with other four or more layer device |
442 | Separate ON and OFF control circuit |
443 | Transformer or inductor in control circuit |
444 | Complex wave supply |
447 | AC supply |
448 | Device in bridge |
449 | PUT (i.e., programmable unijunction transistor) |
450 | Four electrodes |
451 | Zero point switching |
453 | Silicon controlled rectifier (SCR) |
454 | With unijunction transistor |
455 | Triac |
456 | Plural |
457 | Combined with diac |
458 | Combined with diverse four or more layer device |
459 | With bipolar transistor |
460 | Plural SCRs |
463 | With bipolar transistor |
464 | Having plural four or more layer devices |
465 | DC supply |
466 | PUT (i.e., programmable unijunction transistor) |
467 | Four electrodes |
468 | SCR and unijunction transistor |
469 | Triac |
470 | Plural devices |
475 | SCR and bipolar transistor |
476 | Triac |
477 | Unijunction transistor (UJT) |
478 | Bipolar transistor |
479 | Special four or more electrode device (e.g., multiple bases, three electrode bipolar with FET gate, etc.) |
482 | Plural |
493 | Utilizing two electrode solid-state device |
494 | Bridge circuit |
498 | Negative resistance |
499 | "N"-shape curve on I-V plot (e.g., tunnel diode type, etc.) |
500 | "S"-shape curve on I-V plot (e.g., pnpn diode type, etc.) |
502 | Breakdown characteristic (e.g., zener diode, etc.) |
503 | PIN diode |
504 | PN junction diode |
506 | Three or more electrode electron tube |
507 | Two electrode electron tube |
509 | EXTERNAL EFFECT |
510 | Magnetic |
512 | Temperature |
514 | Light |
516 | Utilizing conversion of mechanical variations into electrical variations (e.g., vibration sensitive, etc.) |
517 | Responsive to proximity or touch |
518 | WITH PARTICULAR CONTROL |
519 | Plurality of load devices |
520 | Plural active components included in a controlling circuit |
523 | Gaseous tube |
524 | SPECIFIC IDENTIFIABLE DEVICE, CIRCUIT, OR SYSTEM |
525 | Fusible link or intentional destruct circuit |
526 | Redundant |
527 | Superconductive (e.g., cryogenic, etc.) device |
530 | With specific source of supply or bias voltage |
531 | Fluctuating or AC source with rectifier or filter |
534 | Having particular substrate biasing |
538 | Stabilized (e.g., compensated, regulated, maintained, etc.) |
539 | Using bandgap |
540 | With voltage source regulating |
542 | With diverse type transistor devices |
543 | Using field-effect transistor |
544 | Power conservation or pulse type |
545 | Including signal protection or bias preservation |
547 | With selectively or alternately DC or AC input |
548 | With oscillator or interrupter |
549 | With hum or interaction prevention |
550 | With particular filament heating circuit |
551 | Unwanted signal suppression |
560 | Nonlinear amplifying circuit |
564 | Integrated structure |
567 | Thin film |
568 | Negative resistance type |
569 | Unijunction transistor |
570 | Having "N"-shape curve on I-V plot (e.g., tunnel diode type, etc.) |
571 | Having "S"-shape curve on I-V plot (e.g., pnpn diode type, etc.) |
572 | Secondary emissive type |
574 | Utilizing a three or more electrode solid-state device |
575 | Darlington connection |
576 | Complementary transistors |
577 | Multiple emitter transistor |
578 | Multiple collector transistor |
579 | Minority carrier storage |
580 | Transistor breakdown device (e.g., avalanche, zener, punch through, etc.) |
581 | Field-effect transistor |
582 | Four or more layer device (e.g., silicon-controlled rectifier, etc.) |
583 | Utilizing two electrode solid-state device |
584 | Breakdown diode (e.g., zener diode, avalanche diode, etc.) |
585 | Minority carrier storage diode (e.g., enhancement diode, etc.) |
586 | Capacitive diode |
587 | Bridge circuit |
588 | With bridge circuit |
589 | With bootstrap circuit |
590 | With particular feedback |
591 | Tube performs plural functions |
592 | With oscillation prevention |
593 | With distributed parameter circuit |
594 | With particular coupling or decoupling |
595 | With particular connecting |
596 | Including oscillatory or shock-excited circuit |
597 | With particular grid control |
598 | With particular tube structure |
603 | MISCELLANEOUS |
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