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| Class 216 | ETCHING A SUBSTRATE: PROCESSES |
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| This Class 216 is considered to be an integral part of Class 156 (see the Class 156 schedule for the position of this Class in schedule hierarchy). This Class retains all pertinent definitions and class lines of Class 156. | ||
![[List of Pre Grant Publications for class 216 subclass 2]](../as.gif) | ![[List of Patents for class 216 subclass 2]](../ps.gif) | 2 | ETCHING OF SEMICONDUCTOR MATERIAL TO PRODUCE AN ARTICLE HAVING A NONELECTRICAL FUNCTION |
| | 3 | FORMING OR TREATING JOSEPHSON JUNCTION ARTICLE |
| | 4 | FORMING OR TREATING A SIGN OR MATERIAL USEFUL IN A SIGN |
| | 6 | FORMING OR TREATING MATERIAL USEFUL IN A CAPACITOR |
| | 7 | FORMING OR TREATING FIBROUS ARTICLE OR FIBER REINFORCED COMPOSITE STRUCTURE |
| | 8 | FORMING OR TREATING CYLINDRICAL OR TUBULAR ARTICLE HAVING PATTERN OR DESIGN ON ITS SURFACE |
| | 9 |  Forming or treating an embossing cylinder or tubular article |
| | 10 | Forming or treating liquid transfer cylinder or tubular article (e.g., printing roll, etc.) |
| | 11 | FORMING OR TREATING AN ARTICLE WHOSE FINAL CONFIGURATION HAS A PROJECTION |
| | 12 | FORMING OR TREATING MASK USED FOR ITS NONETCHING FUNCTION (E.G., SHADOW MASK, X-RAY MASK, ETC.) |
| | 13 | FORMING OR TREATING ELECTRICAL CONDUCTOR ARTICLE (E.G., CIRCUIT, ETC.) |
| | 14 | Forming or treating lead frame or beam lead |
| | 15 | Forming or treating a crossover |
| | 16 | Forming or treating resistive material |
| | 17 | Forming or treating of groove or through hole |
| | 18 |  Filling or coating of groove or through hole with a conductor to form an electrical interconnection |
| | 19 | Filling or coating of groove or through hole in a conductor with an insulator |
| | 20 | Adhesive or autogenous bonding of self-sustaining preforms (e.g., prefabricated base, etc.) |
| | 21 | Repairing circuit |
| | 22 | FORMING OR TREATING ARTICLE CONTAINING MAGNETICALLY RESPONSIVE MATERIAL |
| | 23 | FORMING OR TREATING ARTICLE CONTAINING A LIQUID CRYSTAL MATERIAL |
| | 24 | FORMING OR TREATING OPTICAL ARTICLE |
| | 27 | FORMING OR TREATING THERMAL INK JET ARTICLE (E.G., PRINT HEAD, LIQUID JET RECORDING HEAD, ETC.) |
| | 28 | FORMING OR TREATING AN ORNAMENTED ARTICLE |
| | 29 | Wood surface treated or wood grain produced |
| | 30 | Treating stone (e.g., marble, etc.) |
| | 31 | Treating glass (e.g., mirror, etc.) |
| | 32 | Treating elemental metal or alloy thereof |
| | 33 | ADHESIVE OR AUTOGENOUS BONDING OF TWO OR MORE SELF-SUSTAINING PREFORMS WHEREIN AT LEAST TWO OF THE PREFORMS ARE NOT INTENDED TO BE REMOVED (E.G., PREFABRICATED BASE, ETC.) |
| | 34 | Etching improves or promotes adherence of preforms being bonded |
| | 36 | Removing at least one of the self-sustaining preforms or a portion thereof |
| | 37 | ETCHING AND COATING OCCUR IN THE SAME PROCESSING CHAMBER |
| | 38 | PLANARIZING A NONPLANAR SURFACE |
| | 39 | FORMING GROOVE OR HOLE IN A SUBSTRATE WHICH IS SUBSEQUENTLY FILLED OR COATED |
| | 40 | FORMING PATTERN USING LIFT OFF TECHNIQUE |
| | 41 | MASKING OF A SUBSTRATE USING MATERIAL RESISTANT TO AN ETCHANT (I.E., ETCH RESIST) |
| | 42 | Resist material applied in particulate form or spray |
| | 43 | Adhesively bonding resist to substrate |
| | 44 | Mechanically forming pattern into a resist |
| | 45 | Mask is reusable (i.e., stencil) |
| | 46 | Masking of sidewall |
| | 47 | Mask is multilayer resist |
| | 48 | Mask is exposed to nonimaging radiation |
| | 49 | Mask resist contains organic compound |
| | 51 | Mask resist contains inorganic material |
| | 52 | MECHANICALLY SHAPING, DEFORMING, OR ABRADING OF SUBSTRATE |
| | 54 | PATTERN OR DESIGN APPLIED BY TRANSFER |
| | 55 | HEATING OR BAKING OF SUBSTRATE PRIOR TO ETCHING TO CHANGE THE CHEMICAL PROPERTIES OF SUBSTRATE TOWARD THE ETCHANT |
| | 56 | ETCHING TO PRODUCE POROUS OR PERFORATED ARTICLE |
| | 57 | GAS PHASE AND NONGASEOUS PHASE ETCHING ON THE SAME SUBSTRATE |
| | 58 | GAS PHASE ETCHING OF SUBSTRATE |
| | 59 | With measuring, testing, or inspecting |
| | 62 | Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant |
| | 63 | Application of energy to the gaseous etchant or to the substrate being etched |
| | 64 | Etchant is devoid of chlorocarbon or fluorocarbon compound (e.g., C.F.C., etc.) |
| | 65 | Using laser |
| | 66 | Using ion beam, ultraviolet, or visible light |
| | 67 | Using plasma |
| | 72 | Etching a multiple layered substrate where the etching condition used produces a different etching rate or characteristic between at least two of the layers of the substrate |
| | 73 | Etching vapor produced by evaporation, boiling, or sublimation |
| | 74 | Etching inorganic substrate |
| | 75 | Substrate contains elemental metal, alloy thereof, or metal compound |
| | 76 |  Etching of substrate containing at least one compound having at least one oxygen atom and at least one metal atom |
| | 77 | Etching of substrate containing elemental aluminum, or an alloy or compound thereof |
| | 78 | Etching of substrate containing elemental copper, or an alloy or compound thereof |
| | 79 | Etching silicon containing substrate |
| | 81 | Etching elemental carbon containing substrate |
| | 83 | NONGASEOUS PHASE ETCHING OF SUBSTRATE |
| | 84 | With measuring, testing, or inspecting |
| | 87 | Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to ethching to change properties of substrate toward the etchant |
| | 88 | Using film of etchant between a stationary surface and a moving surface (e.g., chemical lapping, etc.) |
| | 90 | Relative movement between the substrate and a confined pool of etchant |
| | 92 | Projecting etchant against a moving substrate or controlling the angle or pattern projection of the etchant or controlling the angle or pattern of movement of the substrate |
| | 93 | Recycling, regenerating, or rejunevating etchant |
| | 94 | Etching using radiation (e.g., laser, electron-beam, ion-beam, etc.) |
| | 95 | Substrate is multilayered |
| | 96 | Etching inorganic substrate |
| | 97 | Substrate is glass |
| | 99 | Substrate contains silicon or silicon compound |
| | 100 | Substrate contains elemental metal, alloy thereof, or metal compound |
| FOREIGN ART COLLECTIONS | ||
| FOR000 | CLASS-RELATED FOREIGN DOCUMENTS |
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