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1

PROCESSES JOINING INDEPENDENT CRYSTALS

2

PROCESSES OF GROWTH WITH A SUBSEQUENT STEP ACTING ON THE CRYSTAL TO ADJUST THE IMPURITY AMOUNT (E.G., DIFFUSING, DOPING, GETTERING, IMPLANTING)

3

PROCESSES OF GROWTH WITH A SUBSEQUENT STEP OF HEAT TREATING OR DELIBERATE CONTROLLED COOLING OF THE SINGLE-CRYSTAL

4

PROCESSES OF GROWTH FROM SOLID OR GEL STATE (E.G., SOLID PHASE RECRYSTALLIZATION)

5

Organic product

6

At pressure above 1 atmosphere

7

Using heat (e.g., strain annealing)

8

Of amorphous precursor

9

Epitaxy formation

10

Using temperature gradient (e.g., moving zone recrystallization)

11

PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE

12

Crucibleless process having movement of discrete droplets or solid particles to thin-film precursor (e.g., Verneuil method)

13

Having pulling during growth (e.g., Czochralski method, zone drawing)

14

With a step of measuring, testing, or sensing (e.g., using TV, photo, or X-ray detector or weight changes)

15

With responsive control

16

Shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, Stepanov method)

17

With contact with an immiscible liquid (e.g., LEC)

18

Using a sectioned crucible or providing replenishment of precursor

19

Forming an intended mixture (excluding mixed crystal) (e.g., doped)

20

Comprising a silicon crystal with oxygen containing impurity

21

Comprising a semiconductor with a charge carrier impurity

22

Forming adjoining crystals of different compositions (e.g., junction)

23

Shape defined by a solid member other than seed or product (e.g., edge-defined film-fed growth, Stepanov method)

24

Embedded in product (e.g., string-stabilized web)

25

Defines a product with a hollow structure (e.g., tube)

26

Defines a flat product

27

Pulling includes a horizontal component

28

Including non-coincident axes of rotation (e.g., relative eccentric)

29

Passing non-induced electric current through a crystal-liquid interface (e.g., Peltier)

30

With liquid flow control or manipulation during growth (e.g., mixing, replenishing, magnetic levitation, stabilization, convection control, baffle)

31

Including a sectioned crucible (e.g., double crucible, baffle)

32

Using a magnetic field

33

Replenishing of precursor during growth (e.g., continuous method, zone pulling)

34

Including significant cooling or heating detail

35

With a significant technique for (a) preliminary preparation or growth starting or (b) product handling or growth ending (e.g., arrangement of or crystallography of seed)

36

Precursor intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux, crystal lattice modifier)

37

Having moving solid-liquid-solid region

38

Including a step of measuring, testing, or sensing

39

With responsive control

40

Liquid precursor penetrating only a portion of a single-crystal, thereby liquefying it, and single-crystal formation therefrom which adjoins the never-liquefied portion of the single-crystal (e.g., liquid wire migration)

41

Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, travelling solvent, flux)

42

Product has an element in common with the unusable residual portion

43

Distinctly layered product (e.g., twin, SOI, epitaxial crystallization)

44

Adjacent single-crystal product regions separately formed (e.g., multiple non-coextensive passes of a scanning laser)

45

Non-planar crystal grown (e.g., ELO)

46

Movement includes a horizontal component

47

Flat, free-standing (i.e., substrate-free) product (e.g., ribbon, film, sheet)

48

Solid heating means contacting the liquid (e.g., immersed)

49

Liquid zone contacts only precursor and product solids (e.g., crucibleless, liquid encapsulant, float zone)

50

Liquefying by energy from an electromagnetic wave or electromagnetic particle or arc or plasma (e.g., radiant heat)

51

Electromagnetic induction

52

With liquid control (e.g., vibration damping, stabilizing, melt levitation focusing coil)

53

Forming a single-crystal region by liquefying a region of a single-crystal and adjusting the composition of the liquid (e.g., alloying, regrowth)

54

Liquid phase epitaxial growth (LPE)

55

With a step of measuring, testing, or sensing

56

Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)

57

Including a sliding boat system

58

With pretreatment of epitaxy substrate (e.g., autodoping control, cleaning, polishing, leveling, masking)

59

Including a tipping system (e.g., rotation, pivoting)

60

Including a vertical dipping system

61

Including a sliding boat system

62

Electric current controlled or induced growth

63

Characterized by specified crystallography of the substrate

64

Precursor composition intentionally contains an excess component or a non-product appearing component (e.g., solvent, flux)

65

Having an element in common

66

Excess component or non-product appearing component contains an oxygen atom (e.g., hydrothermal)

67

Excess component or non-product appearing component contains a metal atom

68

Having growth from a solution comprising a solvent which is liquid at or below 20 degrees Celsius (e.g., aqueous solution)

69

With a step of measuring, testing, or sensing

70

Growth accompanied by material removal (other than the product) from solution (e.g., solvent evaporation, osmosis)

71

At pressure above 1 atmosphere (e.g., hydrothermal processes)

72

Quartz (SiO2) product

73

Havin growth from molten state (e.g., solution melt)

74

Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)

75

Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament) (e.g., VLS method)

76

Using a scavenger agent (e.g., remove, add, deplete, or redistribute impurity or dopant)

77

Gas or vapor state precursor or overpressure

78

Precursor composition intentionally different from product (e.g., excess component, non-product forming component, dopant, non-stoichiometric precursor, solvent, flux)

79

Unusable portion contains a metal atom (e.g., diamond or CBN growth in metal solvent)

80

Unusable portion contains an oxygen atom (e.g., oxide flux)

81

Growth confined by a solid member other than seed or product (e.g., Bridgman-Stockbarger method)

82

Including vertical precursor-product interface (e.g., horizontal Bridgman)

83

Having bottom-up crystallization (e.g., VFG, VGF)

84

FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION)

85

With a step of measuring, testing, or sensing

86

With responsive control

87

Forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament)

88

With decomposition of a precursor (except impurity or dopant precursor) composed of diverse atoms (e.g., CVD)

89

Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)

90

With pretreatment of substrate (e.g., coacting ablating)

91

With a chemical reaction (except ionization) in a disparate zone to form a precursor

92

Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, PECVD, CBE, MOMBE, RF induction, laser)

93

With significant flow manipulation or condition, other than merely specifying the components or their sequence or both

94

With pretreatment or preparation of a base (e.g., annealing)

95

Coating (e.g., masking, implanting)

96

For autodoping control

97

Material removal (e.g., etching, cleaning, polishing)

98

With a movement of substrate or vapor or gas supply means during growth (e.g., substrate rotation)

99

With a chemical reaction (except ionization) in a disparate zone to form a precursor (e.g., transport processes)

100

Fully-sealed or vacuum-maintained chamber (e.g., ampoule)

101

Characterized by specified crystallography or arrangement of substrate (e.g., wafer cassette, Miller index)

102

With significant flow manipulation or condition, other than merely specifying the components or their sequence or both

103

Using an energy beam or field, a particle beam or field, or a plasma (e.g., ionization, PECVD, CBE, MOMBE, RF induction, laser)

104

Using an organic precursor (e.g., propane, metal-organic, MOCVD, MOVPE)

105

Including change in a growth-influencing parameter (e.g., composition, temperature, concentration, flow rate) during growth (e.g., multilayer or junction or superlattice growing)

106

With pretreatment or preparation of a base (e.g., annealing)

107

With movement of substrate or vapor or gas supply means during growth

108

Using an energy beam or field, a particle beam or field, or a plasma (e.g., MBE)

109

Fully-sealed or vacuum-maintained chamber (e.g., ampoule)

200

APPARATUS

201

With means for measuring, testing, or sensing

202

With responsive control means

203

With a window or port for visual observation or examination

204

With means for treating single-crystal (e.g., heat treating)

205

For forming a platelet shape or a small diameter, elongate, generally cylindrical shape (e.g., whisker, fiber, needle, filament)

206

For crystallization from liquid or supercritical state

207

Crucibleless apparatus having means providing movement of discrete droplets or solid particles to thin-film precursor (e.g., Verneuil method)

208

Seed pulling

209

Including solid member shaping means other than seed or product (e.g., EDFG die)

210

Means for forming a hollow structure (e.g., tube, polygon)

211

Including means forming a flat shape (e.g., ribbon)

212

Pulling includes a horizontal component

213

Including a sectioned crucible (e.g., double crucible, baffle)

214

Including details of precursor replenishment

215

Including sealing means details

216

Including a fully-sealed or vacuum-maintained crystallization chamber (e.g., ampoule)

217

Including heating or cooling details (e.g., shield configuration)

218

Including details of means providing product movement (e.g., shaft guides, servo means)

219

Having means for producing a moving solid-liquid-solid zone

220

Includin a solid member other than seed or product contacting the liquid (e.g., crucible, immersed heating element)

221

Havind details of a stabilizing feature

222

Including heating or cooling details

223

Shape defined by a solid member other than seed or product (e.g., Bridgman-Stockbarger)

224

Including pressurized crystallization means (e.g., hydrothermal)

900

APPARATUS CHARACTERIZED BY COMPOSITION OR TREATMENT THEREOF (E.G., SURFACE FINISH, SURFACE COATING)

901

LEVITATION, REDUCED GRAVITY, MICROGRAVITY, SPACE

902

SPECIFIED ORIENTATION, SHAPE, CRYSTALLOGRAPHY, OR SIZE OF SEED OR SUBSTRATE

903

DENDRITE OR WEB OR CAGE TECHNIQUE

904

LASER BEAM

905

ELECTRON BEAM

906

SPECIAL ATMOSPHERE OTHER THAN VACUUM OR INERT

907

Refluxing atmosphere

910

DOWNWARD PULLING

911

SEED OR ROD HOLDERS

912

REPLENISHING LIQUID PRECURSOR, OTHER THAN A MOVING ZONE

913

GRAPHOEPITAXY OR SURFACE MODIFICATION TO ENHANCE EPITAXY

914

CRYSTALLIZATION ON A CONTINUOUS MOVING SUBSTRATE OR COOLING SURFACE (E.G., WHEEL, CYLINDER, BELT)

915

SEPARATING FROM SUBSTRATE

916

OXYGEN TESTING

917

MAGNETIC

918

SINGLE-CRYSTAL WAVEGUIDE

919

Organic

920

SINGLE-CRYSTALS HAVING A HOLLOW (E.G., TUBE, CONCAVO-CONVEX) {C30B 29/66}

921

SMALL DIAMETER, ELONGATE, GENERALLY CYLINDRICAL SINGLE-CRYSTAL (E.G., WHISKERS, NEEDLES, FILAMENTS, FIBERS, WIRES) {C30B 29/62}

922

FREE-STANDING, FLAT SINGLE-CRYSTAL (E.G., PLATELET, PLATE, STRIP, DISK, TAPE, SHEET, RIBBON) {C30B 29/64}

923

SINGLE-CRYSTAL OF COMPLEX GEOMETRY (E.G., PATTERNED, ELO) {C30B 29/66}

924

HOMOGENEOUS COMPOSITION PRODUCT WITH ENLARGED CRYSTALS OR ORIENTED-CRYSTALS (E.G., COLUMNAR)

925

ORGANIC COMPOUND CONTAINING SINGLE-CRYSTAL {C30B 29/54}

926

Tartrate containing (e.g., Rochelle salt) {C30B 29/56}

927

Macromolecular compound containing (i.e., more than about 100 atoms) {C30B 29/58}

928

SINGLE-CRYSTAL OF PURE OR INTENTIONALLY DOPED ELEMENT {C30B 29/02}

929

Carbon (e.g., diamond) {C30B 29/04}

930

Silicon from solid or gel state {C30B 29/06}

931

Silicon from liquid or supercritical state {C30B 29/06}

932

By pulling {C30B 29/06}

933

By moving zone (not Verneuil) {C30B 29/06}

934

By liquid phase epitaxy {C30B 29/06}

935

Silicon from vapor or gaseous state {C30B 29/06}

936

Germanium {C30B 29/08}

937

INORGANIC CONTAINING SINGLE-CRYSTAL (E.G., COMPOUND, MIXTURE, COMPOSITE) {C30B 29/10}

938

Gold, silver, or platinum containing {C30B 29/52}

939

Free metal or intermetallic compound or silicon-metal compound based, except arsenic (e.g., alloys, SiGe, InSb) {C30B 29/40, 29/52}

940

Halide containing (e.g., fluorphlogopite, fluor-mica) {C30B 29/12}

941

Phosphorus-oxygen bond containing (e.g., phosphate (PO4)) {C30B 29/14}

942

Silicon-oxygen bond containing (e.g., emerald, beryl, garnet, mica) {C30B 29/16}

943

Quartz (SiO2) {C30B 29/18}

944

Oxygen compound containing (e.g., yttria stabilized zirconia) {C30B 29/16}

945

Containing A3Me5O12 (1.5(A2O3):2.5(Me2O3)), wherein A is trivalent and selected from the group Sc, Y, La, Hf, or a rare earth metal and Me is trivalent and selected from the group Fe, Ga, Sc, Cr, Co, or Al (e.g., non-silicate garnets) {C30B 29/28}

946

Containing AMe2O4 (AO:(Me2O3)), wherein A is divalent and selected from the group Mg, Ni, Co, Mn, Zn, or Cd and Me is trivalent and selected from the group Fe, Ga, Sc, Cr, Co, or Al (e.g., spinels) {C30B 29/26}

947

Containg AMeO3 ((A2O3):(Me2O3)), wherein A is trivalent and selected from the group Sc, Y, La, Hf, or a rare earth metal and Me is trivalent and selected from the group Fe, Ga, Sc, Cr, Co, or Al (e.g., Perovskite structure, ortho-ferrites) {C30B29/24}

948

Niobate, vanadate, or tantalate containing {C30B 29/30}

949

Titanate, germanate, molybdate, or tungstate containing {C30B 29/32}

950

Aluminum containing (e.g., AL2O3, ruby, corundum, sapphire, chrysoberyl) {C30B 29/20}

951

Carbide containing (e.g., SiC) {C30B 29/36}

952

Nitride containing (e.g., GaN, cBN) {C30B 29/38}

953

{B,Al,Ga,In,Tl}{P,As,Sb,Bi} compound containing, except intermetallics thereof (i.e., except {Al,Ga,In,Tl}{Sb,Bi}) {C30B 29/40}

954

Gallium arsenide containing (e.g., GaAlAs, GaAs) {C30B 29/42}

955

Gallium phosphide containing {C30B 29/44}

956

{Zn,Cd,Hg}{S,Se,Te} compound containing {C30B 29/46}

957

CdHgTe containing {C30B 29/48}

958

Cadmium sulfide containing (e.g., ZnCdS) {C30B 29/50}

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