CLASS 257, ACTIVE SOLID-STATE DEVICES (E.G.,TRANSISTORS, SOLID-STATE DIODES) |
1 | BULK EFFECT DEVICE: |
This subclass is indented under the class definition. Subject matter in which the active device is made up of
a semiconductor material whose electrical characteristics are due
to the electronic properties of the semiconductor material, which
are exhibited throughout the entire body of material rather than
in just a localized region thereof (e.g., the surface).
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2 | . Bulk effect switching in amorphous material: |
This subclass is indented under subclass 1. Subject matter wherein the bulk material is an amorphous material, i.e., one in which active solid material is non-crystalline in the sense that (1) there is either complete disorder in the arrangement of atoms/mole or molecules of the material or (2) there is an absence of any long range structural order that is detectable by electron or X-ray diffraction patterns of the material and the device is used as an electronic switch. | |
3 | .. With means to localize region of conduction (e.g., "pore" structure): |
This subclass is indented under subclass 2. Subject matter wherein means (e.g., a porous structure) is provided to confine the operating current to a particular region of the bulk effect amorphous material. | |
4 | .. With specified electrode composition or configuration: |
This subclass is indented under subclass 2. Subject matter wherein the amorphous material bulk effect switching device has electrodes which have a particular chemical constituency or shape. | |
5 | .. In array: |
This subclass is indented under subclass 2. Subject matter in which the amorphous bulk effect switch
has a group of individual switch elements with a predetermined (often
regular) spacing extended in one or more directions.
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6 | . Intervalley transfer (e.g., Gunn effect): |
This subclass is indented under subclass 1. Subject matter wherein electrons under the influence of
sufficiently high electric fields are transferred between energy
minima having different momentum in the conduction band of the active
semiconductor material, or holes under the influence of sufficiently
high electric fields are transferred between energy minima having different
momentum in the valence band of the active semiconductor material.
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7 | .. In monolithic integrated circuit: |
This subclass is indented under subclass 6. Subject matter wherein the intervalley transfer devices are integrally combined with one or more other active (e.g., diode or transistor) or passive (e.g., resistor or capacitor) devices in a single solid-state electronic device. | |
8 | .. Three or more terminal device: |
This subclass is indented under subclass 6. Subject matter wherein an intervalley transfer device contains three or more electrical terminals. | |
9 | THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE): |
This subclass is indented under the class definition. Subject matter wherein the active material is a thin physical
layer of material located between materials which have different
electrical properties than the thin layer and wherein the thin active
physical layer is (1) a potential well layer thin enough to establish
discrete quantum energy levels or (2) a potential barrier layer
thin enough to permit quantum mechanical tunneling or (3) a layer
thin enough to permit carrier transmission therethrough with substantially
no scattering of the carriers.
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10 | . Low workfunction layer for electron emission (e.g., photocathode electron emissive layer): |
This subclass is indented under subclass 9. Subject matter wherein a layer of material from which electrons
are emitted with less input energy than that necessary to emit them
from adjacent material is provided.
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11 | .. Combined with a heterojunction involving a III-V compound: |
This subclass is indented under subclass 10. Subject matter in which the thin active layer and low workfunction layer for electron emission are combined with a heterojunction, i.e., a transition region between two materials with different energy band gaps, one material of which is a III-V compound, i.e., a compound wherein one material is found in group III of the periodic table and another material is found in group V of the periodic table. | |
12 | . Heterojunction: |
This subclass is indented under subclass 9. Subject matter wherein the device includes at least two
adjacent active layers, one of which is made of a substance that
differs from that of the other.
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13 | .. Incoherent light emitter: |
This subclass is indented under subclass 12. Subject matter wherein the device emits incoherent light.
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14 | .. Quantum well: |
This subclass is indented under subclass 12. Subject matter wherein at least two heterojunctions are
formed with a thin active layer of material having a relatively
large carrier affinity between two materials with smaller carrier affinities,
resulting in a quantum mechanical energy well located in the thin
active layer with the relatively large carrier affinity.
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15 | ... Superlattice: |
This subclass is indented under subclass 14. Subject matter wherein a large number of quantum wells are
present, the quantum wells being sufficiently close to each other
that carrier quantum wave functions are spread out over plural quantum
wells and the intervening barriers formed by the boundaries between adjacent
layers having different carrier affinities.
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16 | .... Of amorphous semiconductor material: |
This subclass is indented under subclass 15. Subject matter wherein a superlattice active layer is made of a semiconductor crystal with no regular crystalline structure. | |
17 | .... With particular barrier dimension: |
This subclass is indented under subclass 15. Subject matter wherein the superlattice has a specific quantum electronic potential barrier dimension (e.g., height or width). | |
18 | .... Strained layer superlattice: |
This subclass is indented under subclass 15. Subject matter wherein the crystalline lattice characteristics of adjacent thin active superlattice layers are mismatched so that alternate layers are in elastic tension or compression. | |
19 | ..... SixGe1-x: |
This subclass is indented under subclass 18. Subject matter wherein at least one of the strained superlattice materials is a silicon-germanium alloy. | |
20 | .... Field effect device: |
This subclass is indented under subclass 15. Subject matter wherein the superlattice active layer forms the conduction channel of a field effect device (i.e., one which has two or more terminals denoted as source and gate with a conduction channel therebetween, and in which the current through the conducting channel is controlled by an electric field coming from a voltage which is applied between the gate and source terminals thereof). | |
21 | .... Light responsive structure: |
This subclass is indented under subclass 15. Subject matter wherein absorption of light (ultraviolet, visible, or infrared) by a superlattice active layer or junction causes a change in the current-voltage characteristic of the device. | |
22 | .... With specified semiconductor materials: |
This subclass is indented under subclass 15. Subject matter wherein the superlattice is formed of specified materials. | |
23 | ... Current flow across well: |
This subclass is indented under subclass 14. Subject matter wherein the device operation involves flow
of carriers (electrons or holes) across the quantum well (as contrasted
with tunneling through the well).
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24 | ... Field effect device: |
This subclass is indented under subclass 14. Subject matter wherein the quantum well device is a field
effect device, i.e., one which has two or more terminals denoted
as source and gate, with a conduction channel therebetween, and
in which the current through the conducting channel is controlled
by an electric field coming from a voltage which is applied between
the gate and source terminals thereof.
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25 | ... Employing resonant tunneling: |
This subclass is indented under subclass 14. Subject matter wherein the operation of the device depends not only on carrier charge confinement by the quantum well, but the quantum well layer also acts as an intermediate layer through which carriers pass by resonantly tunneling through both confining barriers and the well. | |
26 | .. Ballistic transport device: |
This subclass is indented under subclass 12. Subject matter in which an active layer is present through
which carriers pass, wherein the active layer is thinner than the
mean free path of the carriers in the material in that layer, so
that carriers can pass through the layer without scattering.
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27 | ... Field effect transistor: |
This subclass is indented under subclass 26. Subject matter wherein the ballistic transport device is
a field effect transistor, i.e., one which has two or more terminals
denoted as source and gate with a conduction channel therebetween,
and in which the current through the conducting channel is controlled
by an electric field coming from a voltage which is applied between
the gate and source terminals thereof.
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28 | . Non-heterojunction superlattice (e.g., doping superlattice or alternating metal and insulator layers): |
This subclass is indented under subclass 9. Subject matter wherein there are a plurality of active layers
and barrier regions, the active layers being sufficiently close
to each other that carrier quantum wave functions are spread out over
plural active layers and the intervening barriers, and wherein the
active layers and barrier regions do not form heterojunctions between
different semiconductor materials.
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29 | . Ballistic transport device (e.g., hot electron transistor): |
This subclass is indented under subclass 9. Subject matter in which an active layer is present through
which carriers pass, which active layer is thinner than the mean
free path of the carriers in the material in that layer, so that
carriers can pass through the layer without scattering.
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30 | . Tunneling through region of reduced conductivity: |
This subclass is indented under subclass 9. Subject matter wherein the active layer through which carrier
tunnelling occurs has lower electrical conductivity than the material
adjacent thereto.
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31 | .. Josephson: |
This subclass is indented under subclass 30. Subject matter wherein the device is of the form of a pair
of superconductive electrodes separated by a thin, less conductive,
portion, through which superconductive tunneling may occur.
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32 | ... Particular electrode material: |
This subclass is indented under subclass 31. Subject matter wherein the electrode material is specified. | |
33 | .... High temperature (i.e., >30° Kelvin): |
This subclass is indented under subclass 32. Subject matter wherein the device can operate at temperatures
above 30 degrees on the Kelvin temperature scale.
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34 | ... Weak link (e.g., narrowed portion of superconductive line): |
This subclass is indented under subclass 31. Subject matter wherein the active layer is a superconductive material of lower current capacity than the pair of superconductive electrodes. | |
35 | ... Particular barrier material: |
This subclass is indented under subclass 31. Subject matter wherein the active layer material is specified. | |
36 | ... With additional electrode to control conductive state of Josephson junction: |
This subclass is indented under subclass 31. Subject matter wherein a specific electrode in addition to the pair of superconductive electrodes forming the Josephson junction is used to control the conductive state of the junction. | |
37 | .. At least one electrode layer of semiconductor material: |
This subclass is indented under subclass 30. Subject matter wherein the tunneling device has at least one electrode layer comprised of a semiconductive material. | |
38 | ... Three or more electrode device: |
This subclass is indented under subclass 37. Subject matter wherein the tunneling device has three or more electrodes, at least one of which is made of a semiconductive material. | |
39 | .. Three or more electrode device: |
This subclass is indented under subclass 30. Subject matter wherein the tunneling device has three or more electrodes. | |
40 | ORGANIC SEMICONDUCTOR MATERIAL: |
This subclass is indented under the class definition. Subject matter comprising a semiconductor compound that
includes an organic material characterized by two or more carbon
atoms bonded together, one atom of carbon bonded to at least one
atom of hydrogen or halogen (i.e., chlorine, fluorine, bromine,
iodine), or one atom of carbon bonded to at least one atom of nitrogen
by a single or double bond.
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41 | POINT CONTACT DEVICE: |
This subclass is indented under the class definition. Subject matter including a junction between a semiconductor and a metallic element (e.g., wire) at a single point of contact therebetween. | |
42 | SEMICONDUCTOR IS SELENIUM OR TELLURIUM IN ELEMENTAL FORM: |
This subclass is indented under the class definition. Subject matter including a semiconductor material comprised
of selenium or tellurium in elemental form (i.e., not in a compound).
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43 | SEMICONDUCTOR IS AN OXIDE OF A METAL (E.G., CuO, ZnO) OR COPPER SULFIDE: |
This subclass is indented under the class definition. Subject matter wherein a semiconductor material includes
a metal oxide or copper sulfide.
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44 | WITH METAL CONTACT ALLOYED TO ELEMENTAL SEMICONDUCTOR TYPE PN JUNCTION IN NONREGENERATIVE STRUCTURE: |
This subclass is indented under subclass 107. Subject matter under the class definition wherein the active
solid-state device has a pn junction formed by alloying one or
more impurity metal contacts to an elemental semiconductor, and
wherein the active solid-state device is not a
regenerative device of this class.
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45 | . Elongated alloyed region (e.g., thermal gradient zone melting, TGZM): |
This subclass is indented under subclass 44. Subject matter wherein the alloyed region has at least one dimension substantially larger than another. | |
46 | . In pn junction tunnel diode (Esaki diode): |
This subclass is indented under subclass 44. Subject matter wherein the alloyed pn junction device is a tunnel diode, i.e., wherein the active solid-state device includes a heavily doped pn junction wherein conduction occurs through the junction potential barrier due to a quantum mechanical effect even though the carriers which tunnel through the potential barrier do not have enough energy to overcome the barrier potential. | |
47 | . In bipolar transistor structure: |
This subclass is indented under subclass 44. Subject matter wherein the alloyed pn junction device is a bipolar transistor, i.e., a transistor structure whose working current passes through semiconductor material of both polarities (p and n). | |
48 | TEST OR CALIBRATION STRUCTURE: |
This subclass is indented under the class definition. Subject matter in which structures are provided on active
solid-state devices to permit or facilitate the measurement, test,
or calibration of the characteristics of the devices.
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49 | NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION): |
This subclass is indented under the class definition. Subject matter wherein there is an active junction (e.g.,
a junction between dissimilar materials, or a junction induced by
an applied electric field, which exhibits non-linear current-voltage
characteristics) and at least part of the active junction is formed
by a semiconductor material in polycrystalline or amorphous form.
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50 | . Non-single crystal, or recrystallized, active junction adapted to be electrically shorted (e.g., "anti-fuse" element): |
This subclass is indented under subclass 49. Subject matter wherein the active junction is structured or arranged to form an electrical short circuit between the electrical terminals of the active device. | |
51 | . Non-single crystal, or recrystallized, material forms active junction with single crystal material (e.g., monocrystal to polycrystal pn junction or heterojunction): |
This subclass is indented under subclass 49. Subject matter wherein the active junction is formed by both non-single crystal material and single crystal material. | |
52 | . Amorphous semiconductor material: |
This subclass is indented under subclass 49. Subject matter wherein the non-single crystal semiconductor
material is amorphous, i.e., non-crystalline in the sense that (1)
there is either complete disorder in the arrangement of atoms or
molecules of the material or (2) there is an absence of any long
range structural order that is detectable by electron or X-ray diffraction
patterns of the material.
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53 | .. Responsive to nonelectrical external signals (e.g., light): |
This subclass is indented under subclass 52. Subject matter wherein the amorphous semiconductor active
junction generates an electrical signal when subjected to non-electrical (e.g.,
optical, thermal, or vibratory) signals.
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54 | ... With Schottky barrier to amorphous material: |
This subclass is indented under subclass 53. Subject matter wherein the amorphous semiconductor active junction is formed with a metal, thereby forming a Schottky barrier. | |
55 | ... Amorphous semiconductor is alloy or contains material to change band gap (e.g., SixGe1-x, SiNy): |
This subclass is indented under subclass 53. Subject matter wherein the amorphous semiconductor is an
alloy or contains material to change the band gap of the amorphous
semiconductor material (e.g., SixGe1-xsee
below, SiNy).
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56 | ... With impurity other than hydrogen to passivate dangling bonds (e.g., halide): |
This subclass is indented under subclass 53. Subject matter wherein the amorphous semiconductor material is doped with an impurity other than hydrogen (e.g., a halide) for providing electrical stability by completing chemical bonds between semiconductor atoms which were not completed due to the amorphous nature of the semiconductor active layer material. | |
57 | .. Field effect device in amorphous semiconductor material: |
This subclass is indented under subclass 52. Subject matter wherein the amorphous semiconductor active
junction is a field effect device, i.e., one which has a conducting
channel and two or more electrodes, one of which is denoted a source
and the other a drain electrode, and in which the current through
the conducting channel is controlled by an electric field coming
from a voltage which is applied between the gate and source terminals
thereof.
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58 | ... With impurity other than hydrogen to passivate dangling bonds (e.g., halide): |
This subclass is indented under subclass 57. Subject matter wherein the semiconductor active junction amorphous field effect device is doped with an impurity other than hydrogen (e.g., a halide) for providing electrical stability by completing chemical bonds between semiconductor atoms which were not completed due to the amorphous nature of the semiconductor active layer material. | |
59 | ... In array having structure for use as imager or display, or with transparent electrode: |
This subclass is indented under subclass 57. Subject matter wherein a plurality of semiconductor active junction amorphous field effect devices are interconnected in a monolithic chip device for generating an image of an object, light from which is incident on the device, or for displaying signals applied to the device, or having an electrode that transmits optical radiation in the infrared, visible, or ultraviolet wavelength bands. | |
60 | ... With field electrode under or on a side edge of amorphous semiconductor material (e.g., vertical current path): |
This subclass is indented under subclass 57. Subject matter wherein the semiconductor active junction amorphous field effect device has an electrode located under or on a side edge of the device to affect the current path through the device (e.g., providing a vertical current path). | |
61 | ... With heavily doped regions contacting amorphous semiconductor material (e.g., heavily doped source and drain): |
This subclass is indented under subclass 57. Subject matter wherein the semiconductor active junction amorphous field effect device has regions in contact with the amorphous material which contain dopant ions with relatively heavy concentrations (e.g., 1018 to 1021 dopant atoms per cubic centimeter). | |
62 | .. With impurity other than hydrogen to passivate dangling bonds (e.g., halide): |
This subclass is indented under subclass 52. Subject matter wherein the semiconductor active junction amorphous field effect device is doped with an impurity other than hydrogen (e.g., a halide) for providing electrical stability by completing chemical bonds between semiconductor atoms which were not completed due to the amorphous nature of the semiconductor active layer material. | |
63 | .. Amorphous semiconductor is alloy or contains material to change band gap (e.g., SixGe1-x, SiNy): |
This subclass is indented under subclass 52. Subject matter wherein the amorphous semiconductor material
is an alloy or contains material to change the energy gap between
the valence and conduction bands.
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64 | . Non-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation): |
This subclass is indented under subclass 49. Subject matter wherein the non-single crystal semiconductor material has a specified crystal structure, such as a specified grain size, a preferred crystallos:graphic axis, or orientation; polycrystalline material in the form of elongated crystallites; or particular configuration of grain boundaries. | |
65 | . Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., GexSi1-x, polycrystalline silicon with dangling bond modifier): |
This subclass is indented under subclass 49. Subject matter wherein the non-single crystal semiconductor is an alloy or contains an additive other than an electrically active dopant, such as a dangling bond passivator or an additive to change the band gap of the amorphous semiconductor material (e.g., SixGe1-x, SiNy). | |
66 | . Field effect device in non-single crystal, or recrystallized, Semiconductor material: |
This subclass is indented under subclass 49. Subject matter wherein the active solid-state device is
a field effect device, i.e., one which operates with the application
of a voltage across electrical terminals thereof.
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67 | .. In combination with device formed in single crystal semiconductor material (e.g., stacked FETs): |
This subclass is indented under subclass 66. Subject matter wherein the field effect device is combined with an active or passive solid-state device located in a single crystal semiconductor material (i.e., one in which atoms are arranged in a regular three dimensional array). | |
68 | ... Capacitor element in single crystal semiconductor (e.g., DRAM): |
This subclass is indented under subclass 67. Subject matter wherein the device is a capacitor element in single crystal material. | |
69 | ... Field effect transistor in single crystal material, complementary to that in non-single crystal, or recrystallized, material (e.g., CMOS): |
This subclass is indented under subclass 67. Subject matter wherein there is a field effect transistor in single crystal material complementary in polarity to the field effect device in the non-single crystal, or recrystallized, material (e.g., a CMOS device). | |
70 | ... Recrystallized semiconductor material: |
This subclass is indented under subclass 67. Subject matter wherein the combined device contains a non-single
semiconductor region of recrystallized material.
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71 | .. In combination with capacitor element (e.g., DRAM): |
This subclass is indented under subclass 66. Subject matter wherein the field effect device in the non-single crystal, or recrystallized, semiconductor material is combined with a capacitor element. | |
72 | .. In array having structure for use as imager or display, or with transparent electrode: |
This subclass is indented under subclass 66. Subject matter wherein a plurality of field effect devices in non-single crystal, or recrystallized, semiconductor material are interconnected in a monolithic chip device for generating an image of an object, light from which is incident on the device, or for displaying signals applied to the device, or having an electrode that transmits optical radiation in the infrared, visible, or ultraviolet wavelength bands. | |
73 | . Schottky barrier to polycrystalline semiconductor material: |
This subclass is indented under subclass 49. Subject matter wherein the device contains a non-ohmic, rectifying metal-to-polycrystalline bulk material electrical contact. | |
74 | . Plural recrystallized semiconductor layers (e.g., "3-dimensional integrated circuit"): |
This subclass is indented under subclass 49. Subject matter wherein the recrystallized material comprises more than one layer of recrystallized semiconductor material. | |
75 | . Recrystallized semiconductor material: |
This subclass is indented under subclass 49. Subject matter wherein the device contains a non-single crystal semiconductor material whose amorphous nature is due to recrystallization. | |
76 | SPECIFIED WIDE BAND GAP (1.5eV) SEMICONDUCTOR MATERIAL OTHER THAN GaAsP or GaAlAs: |
This subclass is indented under the class definition. Subject matter including a semiconductor material with a band gap (between its valance and conduction bands) greater that 1.5 electron volts which is not gallium arsenide phosphide or gallium aluminum arsenide. | |
77 | . Diamond or silicon carbide: |
This subclass is indented under subclass 76. Subject matter wherein the specified wide band gap material is diamond or silicon carbide. | |
78 | . II-VI compound: |
This subclass is indented under subclass 76. Subject matter wherein the specified wide band gap material is a compound, one element of which comes from group II, and the other element of which comes from group VI of the periodic table of elements. | |
79 | INCOHERENT LIGHT EMITTER STRUCTURE: |
This subclass is indented under the class definition. Subject matter wherein the active solid-state device generates
incoherent light when subjected to an appropriate input signal.
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80 | . In combination with or also constituting light responsive device: |
This subclass is indented under subclass 79. Subject matter wherein the light emitting active semiconductor
device is combined with a separate device which generates an electrical
signal when light impinges upon it or the active device both emits
light when stimulated and generates an electrical signal in response
to light impingent thereupon.
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81 | .. With specific housing or contact structure: |
This subclass is indented under subclass 80. Subject matter wherein the combined light emitting and light responsive device is provided with a particular housing or electrical contact structure. | |
82 | ... Discrete light emitting and light responsive devices: |
This subclass is indented under subclass 81. Subject matter wherein the device with a specific housing or contact structure contains separate light emitting and light responsive elements. | |
83 | .. Light coupled transistor structure: |
This subclass is indented under subclass 80. Subject matter wherein the active solid-state device has
a pair of rectifying junctions, a first of which when forward biased
produces light which, when absorbed in the depletion region of the
second junction when reverse biased, produces a current through
the second junction, with the first junction functioning similarly
to the emitter-base junction, and the second junction functioning
similarly to the base-collector junction, of an ordinary bipolar
transistor.
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84 | .. Combined in integrated structure: |
This subclass is indented under subclass 80. Subject matter wherein the light emitting and light responsive devices are combined in a single crystal monolithic structure. | |
85 | ... With heterojunction: |
This subclass is indented under subclass 84. Subject matter wherein the device contains a heterojunction, i.e., wherein the junction separates semiconductor materials of different chemical composition. | |
86 | . Active layer of indirect band gap semiconductor: |
This subclass is indented under subclass 79. Subject matter wherein the light emitting active region
is in or between semiconductor materials in which direct transitions
of electrons from conduction to valance bands do not take place.
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87 | .. With means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in GaP): |
This subclass is indented under subclass 86. Subject matter wherein the light emitting active region with an indirect band gap layer has means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in gallium phosphide). | |
88 | . Plural light emitting devices (e.g., matrix, 7-segment array): |
This subclass is indented under subclass 79. Subject matter wherein the light emitting active semiconductor
device contains more than one light emitting active junction.
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89 | .. Multi-color emission: |
This subclass is indented under subclass 88. Subject matter wherein different light emitting devices emit light of different hues. | |
90 | ... With heterojunction: |
This subclass is indented under subclass 89. Subject matter wherein there is at least one heterojunction, i.e., wherein the junction separates semiconductor materials of different chemical composition. | |
91 | .. With shaped contacts or opaque masking: |
This subclass is indented under subclass 88. Subject matter wherein the plural light emitting devices have electrical contacts with specific shapes or are combined with optical elements which are impervious to light emitted by the devices and are placed in the path of light emitted by the devices. | |
92 | .. Alphanumeric segmented array: |
This subclass is indented under subclass 88. Subject matter wherein the plural light emitting devices
are structured and arranged in segments of Arabic numerals or alphabet
letters.
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93 | .. With electrical isolation means in integrated circuit structure: |
This subclass is indented under subclass 88. Subject matter wherein means to provide electrical isolation, i.e., to prevent electrical short circuits, with respect to each light emitting device, are provided in a single, monolithic chip structure. | |
94 | . With heterojunction: |
This subclass is indented under subclass 79. Subject matter wherein there is at least one junction between
semiconductor materials of different chemical compositions.
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95 | .. With contoured external surface (e.g., dome shape to facilitate light emission): |
This subclass is indented under subclass 94. Subject matter wherein the light emitting device has an external surface with a particular geometric shape, for example, a dome shape to facilitate emission of light from the light emitting device, in spite of it being made of semiconductor material of relatively high index of refraction. | |
96 | .. Plural heterojunctions in same device: |
This subclass is indented under subclass 94. Subject matter wherein the heterojunction light emitting device has more than one heterojunction. | |
97 | ... More than two heterojunctions in same device: |
This subclass is indented under subclass 96. Subject matter wherein the light emitting device has more than two heterojunctions. | |
98 | . With reflector, opaque mask, or optical element (e.g., lens, optical fiber, index of refraction matching layer, luminescent material layer, filter) integral with device or device enclosure or package: |
This subclass is indented under subclass 79. Subject matter wherein the light emitting active junction device is combined with one or more optical elements (e.g., to transmit or shape or otherwise affect light emitted by the device); and the optical element is an integral part of the device or of the housing, encapsulant, or other device enclosure or package. | |
99 | . With housing or contact structure: |
This subclass is indented under subclass 79. Subject matter wherein the light emitting active junction device is combined with a housing or electrical contact structure. | |
100 | . Encapsulated: |
This subclass is indented under subclass 79. Subject matter wherein the light emitting active junction
device is embedded in a protective coating.
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101 | . With particular dopant concentration or concentration profile (e.g., graded junction): |
This subclass is indented under subclass 79. Subject matter wherein the light emitting active junction has a particular concentration of dopant ions or profile in a given direction or cross sectional area or volume. | |
102 | . With particular dopant material (e.g., zinc as dopant in GaAs): |
This subclass is indented under subclass 79. Subject matter wherein the dopant material of the active junction is specified. | |
103 | . With particular semiconductor material: |
This subclass is indented under subclass 79. Subject matter wherein the active junction is in or between semiconductor material whose composition is specified. | |
104 | TUNNELING PN JUNCTION (E.G., ESAKI DIODE) DEVICE: |
This subclass is indented under the class definition. Subject matter wherein the active solid-state device includes
a heavily doped pn junction where conduction occurs through the
junction potential barrier due to a quantum mechanical effect even
though the carriers which tunnel through the potential barrier do not
have enough energy to overcome the barrier potential.
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105 | . In three or more terminal device: |
This subclass is indented under subclass 104. Subject matter wherein the tunnel junction is part of an active solid-state electronic device which has three or more electrical terminals (e.g., transistors or thyristors). | |
106 | . Reverse bias tunneling structure (e.g., "backward" diode, true Zener diode): |
This subclass is indented under subclass 104. Subject matter wherein the tunnel junction is structured
to permit quantum mechanical tunneling of carriers in a reverse
bias mode, i.e., when the p-side of the junction is connected to a
negative voltage source and the n-side of the junction is connected
to a positive voltage source.
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107 | REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR): |
This subclass is indented under the class definition. Subject matter wherein the active solid-state device acts
as if it has two or more active emitter junctions each of which
is associated with a separate, equivalent transistor having an individual
gain and, when initiated by a base region current, the equivalent
transistors mutually drive each other in a regenerative manner to
lower the voltage drop between the emitters.
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108 | . Controlled by nonelectrical, nonoptical external signal (e.g., magnetic field, pressure, thermal): |
This subclass is indented under subclass 107. Subject matter wherein the regenerative switching device is controlled by an input signal other than an optical or electrical signal (e.g., by a magnetic field) or by mechanical stress. | |
109 | . Having only two terminals and no control electrode (gate), e.g., Shockley diode: |
This subclass is indented under subclass 107. Subject matter wherein the regenerative switching device has only two electrical terminals, neither one of which is a control electrode (e.g., gate or base electrode). | |
110 | .. More than four semiconductor layers of alternating conductivity types (e.g., pnpnpn structure, 5 layer bidirectional diacs, etc.): |
This subclass is indented under subclass 109. Subject matter wherein the two terminal device with no control electrode has more than four layers of semiconductor material, each layer having an electrical conductivity type (e.g., p-type or n-type) which differs from that of each adjacent layer. | |
111 | .. Triggered by VBO overvoltage means: |
This subclass is indented under subclass 109. Subject matter wherein the two terminal device with no control electrode includes means to apply a voltage larger than the breakover voltage VBO to initiate operation of the device. | |
112 | .. With highly-doped breakdown diode trigger: |
This subclass is indented under subclass 109. Subject matter wherein the two terminal device with no control electrode includes a diode portion which is heavily doped to decrease its breakdown voltage to trigger the device into operation. | |
113 | . With light activation: |
This subclass is indented under subclass 107. Subject matter wherein the regenerative switching device is activated (e.g., turned on and/or off) by light impinging on a light sensitive portion of the device. | |
114 | .. With separate light detector integrated on chip with regenerative switching device: |
This subclass is indented under subclass 113. Subject matter wherein the light sensitive portion is separate from the regenerative switching device, and is contained in a physically separated area of a single, monolithic chip with the regenerative switching device. | |
115 | .. With electrical trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.): |
This subclass is indented under subclass 113. Subject matter wherein means are provided to amplify the electrical signal generated by the light sensitive portion, in order to trigger the regenerative switching device. | |
116 | .. With light conductor means (e.g., light fiber or light pipe) integral with device or device enclosure or package: |
This subclass is indented under subclass 113. Subject matter wherein the active semiconductor device is provided with means to conduct light (e.g., as light fiber or light pipe) to the light sensitive portion, and the light conductor means is an integral part of the device or of the housing, encapsulant or other device enclosure, or package. | |
117 | ... In groove or with thinned semiconductor portion: |
This subclass is indented under subclass 116. Subject matter wherein the light sensitive portion is located in a groove in the device or wherein it is covered by a relatively thin portion of semiconductor material. | |
118 | .. With groove or thinned light sensitive portion: |
This subclass is indented under subclass 113. Subject matter wherein the light sensitive portion is located in a groove in the surface of the device or is located close to the surface of the device in a thinned region of the device so that only a relatively thin portion of the device has to be traversed by light. | |
119 | . Bidirectional rectifier with control electrode (gate) (e.g., Triac): |
This subclass is indented under subclass 107. Subject matter wherein the regenerative switching device
has a control electrode, can conduct in both forward and reverse
directions, and can be triggered into conduction by a pulse applied
to its control electrode.
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120 | .. Six or more semiconductor layers of alternating conductivity types (e.g., npnpnpn structure): |
This subclass is indented under subclass 119. Subject matter wherein the bidirectional rectifier with control electrode contains six or more layers of semiconductor material, each of which has a different conductivity type, (e.g., n-type or p-type) which differs from that of each adjacent layer. | |
121 | .. With diode or transistor in reverse path: |
This subclass is indented under subclass 119. Subject matter wherein a diode (i.e., a device which passes current in only one direction) is connected to conduct current in one direction, with a regenerative switching device with a control electrode connected to conduct current in the other direction to produce a bi-directionally conducting regenerative switching device. | |
122 | .. Lateral: |
This subclass is indented under subclass 119. Subject matter wherein the bidirectional rectifier with control electrode is of the lateral type, i.e., when viewed in cross section, the two main electrodes (e.g., anode and cathode) are arranged horizontally, side-by-side in the same surface of the semiconductor body. | |
123 | .. With trigger signal amplification (e.g., amplified gate): |
This subclass is indented under subclass 119. Subject matter wherein the bidirectional rectifier with control electrode is combined with means to amplify the electrical signal applied to the control electrode to trigger the device. | |
124 | .. Combined with field effect transistor structure: |
This subclass is indented under subclass 119. Subject matter wherein the bidirectional rectifier with
control electrode includes or is combined with a field effect transistor
structure, i.e., a transistor in which the current through a conducting
channel is controlled by an electric field coming from a voltage
which is applied between the gate and source terminals thereof.
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125 | ... Controllable emitter shunting: |
This subclass is indented under subclass 124. Subject matter wherein the field effect transistor structure is connected to shunt one of the emitter-base junctions of the regenerative structure under control of the voltage applied to the gate of the field effect transistor. | |
126 | .. With means to separate a device into sections having different conductive polarity: |
This subclass is indented under subclass 119. Subject matter wherein the bidirectional rectifier with control electrode has means separating portions thereof which have different conductive polarity. | |
127 | ... Guard ring or groove: |
This subclass is indented under subclass 126. Subject matter wherein the means to separate portions of the device having different conductive polarity is or includes a groove, or a guard ring, i.e., a pn junction region in the body of the device located and/or configured to reduce electric field strength at a given applied voltage. | |
128 | .. Having overlapping sections of different conductive polarity: |
This subclass is indented under subclass 119. Subject matter wherein the bidirectional rectifier with control electrode has outer emitter regions which overlap one another in at least one portion. | |
129 | .. With means to increase reverse breakdown voltage: |
This subclass is indented under subclass 119. Subject matter wherein the bidirectional rectifier with control electrode has means associated therewith to increase the reverse voltage which may be applied without causing electrical breakdown. | |
130 | .. Switching speed enhancement means: |
This subclass is indented under subclass 119. Subject matter wherein the bidirectional rectifier with control electrode includes or is combined with means to increase the speed at which the device switches. | |
131 | ... Recombination centers or deep level dopants: |
This subclass is indented under subclass 130. Subject matter wherein the switching speed enhancement means include (1) centers wherein excess holes and electrons recombine and are removed as charge carriers in the device or (2) dopant ions with energy levels that are located in the forbidden band of the active semiconductor material of the device. | |
132 | . Five or more layer unidirectional structure: |
This subclass is indented under subclass 107. Subject matter wherein the regenerative active solid-state device has five or more layers of semiconductor material producing at least four active junctions, and is operable in a single electrical direction. | |
133 | . Combined with field effect transistor: |
This subclass is indented under subclass 107. Subject matter wherein the regenerative device includes or is combined with a field effect transistor, i.e., a transistor in which the current through a conducting channel is controlled by an electric field coming from a voltage which is applied between the gate and source terminals thereof. | |
134 | .. J-FET (junction field effect transistor): |
This subclass is indented under subclass 133. Subject matter wherein the field effect transistor combined
with the regenerative action junction type switching device is a
junction field effect transistor, i.e., a field effect transistor wherein
the gate region is isolated from the conducting channel by a rectifying
pn junction or Schottky barrier junction.
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135 | ... Vertical (i.e., where the source is located above the drain or vice versa): |
This subclass is indented under subclass 134. Subject matter wherein the operating current path of the JFET is perpendicular to the plane of its main surface. | |
136 | .... Enhancement mode (e.g., so-called SITs): |
This subclass is indented under subclass 135. Subject matter in which no current flows except for leakage
current, when the gate to source voltage is zero.
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137 | .. Having controllable emitter shunt: |
This subclass is indented under subclass 133. Subject matter wherein the regenerative switching device is combined with a junction field effect transistor that is connected across an emitter-base junction of the regenerative device to controllably divert current from the emitter-base junction. | |
138 | ... Having gate turn off (GTO) feature: |
This subclass is indented under subclass 137. Subject matter wherein the regenerative switch is configured to permit application of sufficient gate current to switch the regenerative switch to the OFF state. | |
139 | .. With extended latchup current level (e.g., COMFET device): |
This subclass is indented under subclass 133. Subject matter wherein the regenerative active junction type switching device (e.g., a conductivity modulated FET) includes means to provide regenerative action without latchup over an extended current range of the device (i.e., by increasing IH). | |
140 | ... Combined with other solid-state active device in integrated structure: |
This subclass is indented under subclass 139. Subject matter wherein the extended latchup current level device is combined with another solid-state active device in a monolithic single crystal chip structure. | |
141 | ... Lateral structure, i.e., current flow parallel to main device surface: |
This subclass is indented under subclass 139. Subject matter wherein the extended latchup current level device is structured so that operating current flows parallel to the main device surface (i.e., horizontally or laterally). | |
142 | ... Having impurity doping for gain reduction: |
This subclass is indented under subclass 139. Subject matter wherein the extended latchup current level device has impurity dopant to reduce device regenerative gain, i.e., the gain or amplification of one or more of the active junction portions connected in regenerative fashion. | |
143 | ... Having anode shunt means: |
This subclass is indented under subclass 139. Subject matter wherein the extended latchup current level device has means connected across the emitter-base junction of the PNP transistor portion of the regenerative device to controllably divert current from the emitter-base junction. | |
144 | ... Cathode emitter or cathode electrode feature: |
This subclass is indented under subclass 139. Subject matter wherein the extended latchup current level device has a particular cathode emitter or cathode electrode feature. | |
145 | ... Low impedance channel contact extends below surface: |
This subclass is indented under subclass 139. Subject matter wherein the extended latchup current level device has an electrical contact extending from the device surface into the body of the device which is connected to the channel of the field effect transistor portion and wherein the contact has a relatively low electrical impedance. | |
146 | . Combined with other solid-state active device in integrated structure: |
This subclass is indented under subclass 107. Subject matter wherein the regenerative active junction type switching device is combined with one or more active or passive electronic solid-state devices in a unitary, monolithic, integrated structure. | |
147 | . With extended latchup current level (e.g., gate turn off "GTO" device): |
This subclass is indented under subclass 107. Subject matter wherein the regenerative switching device
includes means to provide regenerative action without latchup over
an extended current range of the device, i.e., extends IH as
defined in subclass 107.
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148 | .. Having impurity doping for gain reduction: |
This subclass is indented under subclass 147. Subject matter wherein the regenerative switching device
has impurity dopant to reduce device gain of one of the equivalent
transistors.
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149 | .. Having anode shunt means: |
This subclass is indented under subclass 147. Subject matter wherein the regenerative switching device has means connected across the emitter-base junction of the PNP transistor section of the regenerative device to divert current from the emitter-base junction. | |
150 | .. With specified housing or external terminal: |
This subclass is indented under subclass 147. Subject matter wherein the regenerative switching device is provided with means to enclose it or a terminal means located external to an enclosure for the device. | |
151 | ... External gate terminal structure or composition: |
This subclass is indented under subclass 150. Subject matter wherein the external electrical terminal structural features or material composition is specified. | |
152 | .. Cathode emitter or cathode electrode feature: |
This subclass is indented under subclass 147. Subject matter wherein the extended latchup current level device has a particular cathode emitter or cathode electrode feature. | |
153 | .. Gate region or electrode feature: |
This subclass is indented under subclass 147. Subject matter wherein the extended latchup current level device has a particular gate (control) electrode feature. | |
154 | . With resistive region connecting separate sections of device: |
This subclass is indented under subclass 107. Subject matter wherein the regenerative active junction type switching device has a resistive region or portion connecting discrete regions of the device. | |
155 | . With switching speed enhancement means (e.g., Schottky contact): |
This subclass is indented under subclass 107. Subject matter wherein the regenerative active junction type switching device is provided with means to increase its switching speed. | |
156 | .. Having deep level dopants or recombination centers: |
This subclass is indented under subclass 155. Subject matter wherein the regenerative device has deep level dopants or electron-hole recombination centers with energy levels that are within the forbidden energy band and widely spaced from the conduction and valence bands of the semiconductor device. | |
157 | . With integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.): |
This subclass is indented under subclass 107. Subject matter wherein the regenerative switching device
has means to amplify the control current of the device, which is
physically integrated with the regenerative switching device.
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158 | .. Three or more amplification stages: |
This subclass is indented under subclass 157. Subject matter wherein the amplification means has three or more stages of amplification. | |
159 | .. Transistor as amplifier: |
This subclass is indented under subclass 157. Subject matter wherein the amplification means is a transistor (i.e., an active semiconductor device having three or more electrodes). | |
160 | .. With distributed amplified current: |
This subclass is indented under subclass 157. Subject matter wherein the regenerative device with amplification means produces amplified current which is distributed by electrodes to other portions of the device. | |
161 | .. With a turn-off diode: |
This subclass is indented under subclass 157. Subject matter wherein the regenerative device with amplification means is integrally provided with a diode, i.e., a solid-state active rectifying two terminal device, to bypass the amplifying stage(s), in order to switch OFF the regenerative device. | |
162 | . Lateral structure: |
This subclass is indented under subclass 107. Subject matter wherein the regenerative active junction type switching device has a lateral structure, i.e., one in which the active junctions are arranged so that electric current flows from side to side, rather than from top to bottom of the device. | |
163 | . Emitter region feature: |
This subclass is indented under subclass 107. Subject matter wherein the active emitter junction region of the regenerative device has a particular characteristic. | |
164 | .. Multi-emitter region (e.g., emitter geometry or emitter ballast resistor): |
This subclass is indented under subclass 163. Subject matter wherein the regenerative switching device
has more than one emitter region.
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165 | ... Laterally symmetric regions: |
This subclass is indented under subclass 164. Subject matter wherein the plural emitters are located in regions of the device which are symmetrical in a horizontal direction. | |
166 | ... Radially symmetric regions: |
This subclass is indented under subclass 164. Subject matter wherein the plural emitters are located in regions of the device which are symmetrical extending radially in a horizontal direction from a predetermined emitter location. | |
167 | . Having at least four external electrodes: |
This subclass is indented under subclass 107. Subject matter wherein the regenerative active junction switching device has at least four electrodes connected to the outside of the device. | |
168 | . With means to increase breakdown voltage: |
This subclass is indented under subclass 107. Subject matter wherein the regenerative active junction type switching device includes means to increase the reverse voltage which the device can sustain without breaking down. | |
169 | .. High resistivity base layer: |
This subclass is indented under subclass 168. Subject matter wherein the means for increasing breakdown voltage includes a base (as contrasted with emitter or collector) layer which has a relatively high electrical resistivity. | |
170 | .. Surface feature (e.g., guard ring, groove, mesa, etc.): |
This subclass is indented under subclass 168. Subject matter wherein the means for increasing breakdown voltage includes a surface feature (e.g., a guard ring or groove or mesa). | |
171 | ... Edge feature (e.g., beveled edge): |
This subclass is indented under subclass 170. Subject matter wherein the surface feature for increasing breakdown voltage is an edge feature (e.g., a beveled) as contrasted with a right angled edge. | |
172 | . With means to lower "ON" voltage drop: |
This subclass is indented under subclass 107. Subject matter wherein the regenerative active junction type switching device comprises means to lower the voltage drop across the main terminals when the switch is operated in the ON mode. | |
173 | . Device protection (e.g., from overvoltage): |
This subclass is indented under subclass 107. Subject matter wherein the regenerative active junction
type switching device includes means for protecting the device from
destructive overloads (e.g., from operating voltage above a particular
threshold level).
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174 | .. Rate of rise of current (e.g., dI/dt): |
This subclass is indented under subclass 173. Subject matter wherein the parameter for which protection means is provided is the rate of rise of operating current in the device. | |
175 | . With means to control triggering (e.g., gate electrode configuration, Zener diode firing, dV/Dt control, transient control by ferrite bead, etc.): |
This subclass is indented under subclass 107. Subject matter wherein the regenerative active junction
type switching device includes means for controlling device turn-on.
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176 | .. Located in an emitter-gate region: |
This subclass is indented under subclass 175. Subject matter wherein the signal control mechanism is a transistor emitter junction with the gate region, and is used as the gate input. | |
177 | . With housing or external electrode: |
This subclass is indented under subclass 107. Subject matter wherein the regenerative active junction
type switching device includes a structure in which to place the
device.
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178 | .. With means to avoid stress between electrode and active device (e.g., thermal expansion matching of electrode to semiconductor): |
This subclass is indented under subclass 177. Subject matter wherein the device has electrode means connected
to its terminals and is further provided with means to avoid creation of
stress between the active device and the electrode means.
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179 | ... With malleable electrode (e.g., silver electrode layer): |
This subclass is indented under subclass 178. Subject matter wherein the electrode means is soft and pliable. | |
180 | .. Stud mount: |
This subclass is indented under subclass 177. Subject matter wherein the housing is provided with a threaded or serrated insert or post used for connecting heat sinks or terminals to the device. | |
181 | .. With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, (e.g., ring): |
This subclass is indented under subclass 177. Subject matter wherein the housing is provided with large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element (e.g., ring). | |
182 | ... With lead feedthrough means on side of housing: |
This subclass is indented under subclass 181. Subject matter wherein means are provided on a side of the housing through which electrical leads extending to or from the device can be located. | |
183 | HETEROJUNCTION DEVICE: |
This subclass is indented under the class definition. Subject matter wherein the active solid-state device contains
a heterojunction, i.e., a boundary between different regions, one
of which is made of a material that differs from that of the other
region.
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183.1 | . Charge transfer device: |
This subclass is indented under subclass 183. Subject matter in which storage sites for packets of electric
charge are induced at or below the surface of the active solid-state
(semiconductor) device by an electric field applied to the device
and wherein carrier potential energy per unit charge minima is established
at a given storage site and such minima is transferred to one or
more adjacent storage sites in a serial manner and which contains
a junction between two semiconductor materials of different chemical
compositions each different composition having a different carrier
affinity.
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184 | . Light responsive structure: |
This subclass is indented under subclass 183. Subject matter wherein the heterojunction generates an electrical output when light impinges on it. | |
185 | .. Staircase (including graded composition) device: |
This subclass is indented under subclass 184. Subject matter wherein the active region contains a number
of layers forming plural heterojunctions and the carrier (i.e.,
electron or hole) affinities of each layer incrementally increase or
decrease progressively across the active region thickness, so that
the energy level diagram of the active region, when under electrical
bias, resembles a staircase.
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186 | .. Avalanche photodetection structure: |
This subclass is indented under subclass 184. Subject matter wherein carriers generated in the active
region of the device in response to light incident thereupon, achieve
enough kinetic energy to knock further carriers from the crystalline
lattice of the active region producing an avalanche or snowball
increase in operating current level.
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187 | .. Having transistor structure: |
This subclass is indented under subclass 184. Subject matter wherein the light responsive heterojunction device has three terminals - an emitter, collector, and a base; a source, drain, and gate; or a hybrid combination of each, which can provide gain or can be used as a switch. | |
188 | .. Having narrow energy band gap (<<1eV) layer (e.g., PbSnTe, HgCdTe, etc.): |
This subclass is indented under subclass 184. Subject matter wherein the light responsive device contains a narrow energy band gap (<<1eV) layer (e.g., PbSnTe or HgCdTe). | |
189 | ... Layer is a group III-V semiconductor compound: |
This subclass is indented under subclass 188. Subject matter wherein the narrow energy band gap layer is a semiconductor compound made of one element taken from periodic table group III elements and another element taken from periodic table group V elements. | |
190 | . With lattice constant mismatch (e.g., with buffer layer to accommodate mismatch): |
This subclass is indented under subclass 183. Subject matter wherein at least one of the materials that
form the heterojunction has a crystalline lattice constant which
is made to differ from the lattice constant of the other material which
forms the heterojunction.
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191 | . Having graded composition: |
This subclass is indented under subclass 183. Subject matter wherein the chemical composition of the semiconductor forming the heterojunction varies continuously in a direction either perpendicular or parallel to the junction. | |
192 | . Field effect transistor: |
This subclass is indented under subclass 183. Subject matter wherein the heterojunction is part of a field effect transistor, i.e., wherein the current through the active heterojunction is controlled by a voltage applied between gate and source terminals of the device. | |
194 | .. Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (HEMT)): |
This subclass is indented under subclass 192. Subject matter wherein the heterojunction field effect transistor
has impurity dopant on the side of the heterojunction with lower
affinity for the charge carriers (holes or electrons)
supplied by the dopant, so that the charge carriers spill over the
heterojunction into the side with higher carrier affinity.
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195 | ... Combined with diverse type device: |
This subclass is indented under subclass 194. Subject matter wherein the heterojunction field effect transistor
with impurity dopant on the side of the heterojunction with lower
affinity for the charge carriers supplied by the dopant is combined
with another electronic device.
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196 | . Both semiconductors of the heterojunction are the same conductivity type (i.e., either n or p): |
This subclass is indented under subclass 183. Subject matter wherein the semiconductor materials which define the heterojunction are of the same conductivity type (e.g., both p or both n). | |
197 | . Bipolar transistor: |
This subclass is indented under subclass 183. Subject matter wherein the heterojunction is part of a bipolar
transistor, i.e., a transistor structure whose working current passes through
semiconductor material of both polarities (p and n) which form a
heterojunction portion of the transistor.
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198 | .. Wide band gap emitter: |
This subclass is indented under subclass 197. Subject matter wherein the bipolar transistor with an active heterojunction region involves a charge carrier emitter region made of a semiconductor material having an energy gap between its conduction and valence bands which is greater than the energy gap of the base region forming a heterojunction therewith. | |
199 | . Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts, including heterojunction IMPATT type microwave diodes): |
This subclass is indented under subclass 183. Subject matter wherein the heterojunction device is a diode
in which conduction under reverse bias conditions is caused by avalanche
breakdown at an applied voltage greater than 6 volts.
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200 | . Heterojunction formed between semiconductor materials which differ in that they belong to different periodic table groups (e.g., Ge (group IV) - GaAs (group III-V) or InP (group III-V) - CdTe (group II-VI)): |
This subclass is indented under subclass 183. Subject matter wherein the heterojunction is formed between semiconductor materials which differ in that they belong to different periodic table groups (e.g., Ge (group IV) - GaAs (group III-V) or InP (group III-V) - CdTe (group II-VI)). | |
201 | . Between different group IV-VI or II-VI or III-V compounds other than GaAs/GaAlAs: |
This subclass is indented under subclass 183. Subject matter wherein the heterojunction forms a boundary between different group IV-VI or group II-VI or group III-V compounds other than GaAs/GaAlAs. | |
202 | GATE ARRAYS: |
This subclass is indented under the class definition. Subject matter comprising a repeating geometric arrangement
of individual structural units of solid-state devices, the solid-state devices
of each individual structural unit being connectable into various
different types of logic circuits in one integrated, monolithic chip.
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203 | . With particular chip input/output means: |
This subclass is indented under subclass 202. Subject matter wherein the gate array integrated circuit
is provided with specific means to input and output electrical signals
to operate the device.
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204 | . Having specific type of active device (e.g., CMOS): |
This subclass is indented under subclass 202. Subject matter wherein the gate array is adapted to use a particular type of solid-state electronic device, e.g., complementary metal oxide semiconductor device (CMOS). | |
205 | .. With bipolar transistors or with FETs of only one channel conductivity type (e.g., enhancement-depletion FETs): |
This subclass is indented under subclass 202. Subject matter wherein the specific type of active device comprises bipolar transistors or FETs of only one channel conductivity type (i.e, field effect transistors that can be used in the enhancement or depletion mode of operation, e.g., IGFETS). | |
206 | .. Particular layout of complementary FETs with regard to each other: |
This subclass is indented under subclass 204. Subject matter wherein the CMOS device includes a plurality of CMOS field effect transistors specifically arranged with regard to each other. | |
207 | . With particular power supply distribution means: |
This subclass is indented under subclass 202. Subject matter wherein the gate array is provided with specific means to provide electrical power to the array. | |
208 | . With particular signal path connections: |
This subclass is indented under subclass 202. Subject matter wherein the gate array is provided with specific signal path connections. | |
209 | .. Programmable signal paths (e.g., with fuse elements, laser programmable, etc): |
This subclass is indented under subclass 208. Subject matter wherein the gate array is provided with means (e.g., fuse elements or laser beam irradiation) to program the selection of signal paths in the array. | |
210 | .. With wiring channel area: |
This subclass is indented under subclass 208. Subject matter wherein the signal paths in the array are located in an area separate from the active devices forming the elements of the array. | |
211 | .. Multi-level metallization: |
This subclass is indented under subclass 208. Subject matter wherein the particular signal path connections
include more than one layer of conductive metal deposited on a substrate.
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212 | CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE-BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR): |
This subclass is indented under the class definition. Subject matter wherein the active solid-state device has
a high resistivity semiconductor region of one conductivity type
having a region of opposite conductivity type forming a pn junction
with a central portion of the high resistivity layer, with structural
means provided to forward bias the pn junction to inject minority
carriers into the high resistivity region to increase its conductivity
through conductivity modulation.
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213 | FIELD EFFECT DEVICE: |
This subclass is indented under the class definition. Subject matter comprising a field effect transistor, in
which the density of electrical charge (electrons or holes) in a
semiconductor region is controlled by a voltage applied to an adjacent
region or electrode which in operation is prevented from conducting
direct electrical current to or from the semiconductor region by an
insulator or barrier region.
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214 | . Charge injection device: |
This subclass is indented under subclass 213. Subject matter wherein the field effect device is a device
in which storage sites for packets of electric charge are induced
at or below the surface of the active solid-state (semiconductor) device
by an electric field applied to the device and wherein carrier potential
energy per unit charge minima are established at a given storage
site and such charge packets are injected into the device substrate
or into a data bus.
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215 | . Charge transfer device: |
This subclass is indented under subclass 213. Subject matter in which storage sites for packets of electric
charge are induced at or below the surface of the active solid-state
(semiconductor) device by an electric field applied to the device
and wherein carrier potential energy per unit charge minima are
established at a given storage site and such minima are transferred
to one or more adjacent storage sites in a serial manner.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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216 | .. Majority signal carrier (e.g., buried or bulk channel, or peristaltic): |
This subclass is indented under subclass 215. Subject matter wherein the transfer is by majority carriers of the semiconductor material, i.e., by electrons in n-type semiconductor material, and is by holes in p-type semiconductor material. | |
217 | ... Having a conductive means in direct contact with channel (e.g., non-insulated gate): |
This subclass is indented under subclass 216. Subject matter wherein an electrical conductor (e.g., electrode)
directly contacts the channel region of the charge transfer device
(e.g., a non-insulated gate (control) electrode).
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218 | ... High resistivity channel (e.g., accumulation mode) or surface channel (e.g., transfer of signal charge occurs at the surface of the semiconductor) or minority carriers at input (i.e., surface channel input): |
This subclass is indented under subclass 216. Subject matter wherein the majority signal carrier charge transfer device has a channel made of relatively high electrical resistivity material, or where the transfer of signal charge takes place at the surface of the semiconductor, or where minority charge carriers are input into a surface channel, but majority carriers are input into the bulk or buried channel portion of the device. | |
219 | ... Impurity concentration variation: |
This subclass is indented under subclass 216. Subject matter wherein the majority signal carrier charge
transfer device contains impurity dopant ions which vary in terms
of concentration in all or part of the channel of the device.
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220 | .... Vertically within channel (e.g., profiled): |
This subclass is indented under subclass 219. Subject matter wherein the impurity dopant ion concentration in the channel of the device varies across the channel in a direction perpendicular to a main surface of the device, regardless of the orientation of the channel (e.g., parallel or perpendicular to a main surface of the device). | |
221 | .... Along the length of the channel (e.g., doping variations for transfer directionality): |
This subclass is indented under subclass 219. Subject matter wherein the impurity dopant ion concentration in the channel of the device varies along the length of the channel, whether the channel is horizontally or vertically oriented. | |
222 | ... Responsive to non-electrical external signal (e.g., imager): |
This subclass is indented under subclass 216. Subject matter wherein the majority signal carrier charge transfer device transfers charge from one charge storage device to another in response to a non-electric signal (e.g., light, pressure, etc.). | |
223 | .... Having structure to improve output signal (e.g., antiblooming drain): |
This subclass is indented under subclass 222. Subject matter wherein the non-external signal responsive device includes structural means, e.g., a drain element which reduces or eliminates optical blooming to improve the signal generated by the device in response to the non-electrical input signal. | |
224 | ... Channel confinement: |
This subclass is indented under subclass 216. Subject matter wherein the majority carrier charge transfer device has means to restrict the dimensions of the thin semiconductor conductive path region (charge transfer channel) between the source and drain of the device. | |
225 | .. Non-electrical input responsive (e.g., light responsive imager, input programmed by size of storage sites for use as a read-only memory, etc.): |
This subclass is indented under subclass 215. Subject matter wherein the means that creates charge to be transferred is non-electrical (e.g., light). | |
226 | ... Sensor element and charge transfer device are of different materials or on different substrates (e.g., "hybrid"): |
This subclass is indented under subclass 225. Subject matter wherein charge carriers generated in response to the non-electrical input are generated in material which is different than, or is located on a different substrate than, the semiconductor material that contains the charge carrier storage sites. | |
227 | ... With specified dopant (e.g., photoionizable, "extrinsic" detectors for infrared): |
This subclass is indented under subclass 225. Subject matter wherein the non-electrical responsive device contains specific impurity dopants. | |
228 | ... Light responsive, back illuminated: |
This subclass is indented under subclass 225. Subject matter wherein the non-electrical input responsive device has two major opposed surfaces, the channel containing the charge carrier storage sites being at or below one surface, and wherein the device is responsive to light which is incident on the other major surface. | |
229 | ... Having structure to improve output signal (e.g., exposure control structure): |
This subclass is indented under subclass 225. Subject matter wherein the non-electrical input responsive
device contains structural means to improve the electrical signal
it generates in response to the non-electrical input signal.
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230 | .... With blooming suppression structure: |
This subclass is indented under subclass 229. Subject matter wherein the structural means to improve the
output signal prevents spill over of a large amount of signal charge
generated at a storage site which receives a non-electrical input
signal of very high intensity to adjacent storage sites.
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231 | ... 2-dimensional area architecture: |
This subclass is indented under subclass 225. Subject matter wherein the device has a plurality of non-electrical
input responsive means spread out over a two dimensional area, e.g.,
a matrix or array of such means.
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232 | .... Having alternating strips of sensor structures and register structures (e.g., interline imager): |
This subclass is indented under subclass 231. Subject matter wherein the 2-dimensional area architecture has alternate strips of sensor structures and charge transfer channels. | |
233 | .... Sensors not overlaid by electrode (e.g., photodiodes): |
This subclass is indented under subclass 232. Subject matter wherein the light responsive sensor elements do not have an electrode overlying them. | |
234 | ... Single strip of sensors (e.g., linear imager): |
This subclass is indented under subclass 225. Subject matter wherein the non-electrical input responsive
device is in the form of a line of individual sensors.
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235 | .. Electrical input: |
This subclass is indented under subclass 215. Subject matter wherein the input to the charge transfer device to create the charge to be transferred is an electrical signal. | |
236 | ... Signal applied to field effect electrode: |
This subclass is indented under subclass 235. Subject matter wherein means is provided to apply an electrical signal to an electrode which has an electrical potential barrier between the electrode and the semiconductor material of the device (e.g., a MOS dielectric or Schottky contact or reverse-biased junction), as contrasted with an ohmic electrical contact to the semiconductor. | |
237 | .... Charge-presetting/linear input type (e.g., fill and spill): |
This subclass is indented under subclass 236. Subject matter wherein means is provided for the input signal to form a potential well, overfill it, drain away the excess charge and input the preset charge in the potential well into the channel. | |
238 | ... Input signal responsive to signal charge in charge transfer device (e.g., regeneration or feedback): |
This subclass is indented under subclass 235. Subject matter wherein means is provided to take charge from the output of a charge transfer device and put it back into the input electrode thereof or into the input electrode of a second charge transfer device. | |
239 | .. Signal charge detection type (e.g., floating diffusion or floating gate non-destructive output): |
This subclass is indented under subclass 215. Subject matter wherein means is provided to detect the amount
of charge being transferred in the device.
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240 | .. Changing width or direction of channel (e.g., meandering channel): |
This subclass is indented under subclass 215. Subject matter wherein the charge transfer path region changes its width or direction throughout all or part of the distance from source to drain electrode. | |
241 | .. Multiple channels (e.g., converging or diverging or parallel channels): |
This subclass is indented under subclass 215. Subject matter wherein the charge transfer device contains
more than one channel for charge transfer path.
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242 | .. Vertical charge transfer: |
This subclass is indented under subclass 215. Subject matter wherein the charge transfer device is provided with structure for vertical charge transfer perpendicular to a main device surface. | |
243 | .. Channel confinement: |
This subclass is indented under subclass 215. Subject matter containing means (e.g., pn junctions or dielectric
layers) to restrict the boundaries of the charge transfer path through
the device.
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244 | .. Comprising a groove: |
This subclass is indented under subclass 215. Subject matter wherein a surface of the device includes
an elongated indentation.
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245 | .. Structure for applying electric field into device (e.g., resistive electrode, acoustic traveling wave in channel): |
This subclass is indented under subclass 215. Subject matter including structure (e.g., electrodes) for
applying electrical energy into the device.
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246 | ... Phase structure (e.g., doping variations to provide asymmetry for 2-phase operation; more than four phases or "electrode per bit"): |
This subclass is indented under subclass 245. Subject matter including a plurality of gate regions or
doping variation regions to permit unidirectional charge packet
transfer by symmetrical or unsymmetrically phased electrical control
signals applied to the device gate or gates.
| |||||||
247 | .... Uniphase or virtual phase structure: |
This subclass is indented under subclass 246. Subject matter wherein the device has one set of gates (control electrodes) or virtual phase structure. | |
248 | .... 2-phase: |
This subclass is indented under subclass 246. Subject matter wherein the device has two sets of gate electrodes. | |
249 | ... Electrode structures or materials: |
This subclass is indented under subclass 245. Subject matter wherein the charge transfer device is provided with specified electrode structures or materials to apply electric field into the device. | |
250 | .... Plural gate levels: |
This subclass is indented under subclass 249. Subject matter wherein the electrode structures include more than one level of gate electrodes relative to a main surface of the device. | |
251 | .. Substantially incomplete signal charge transfer (e.g., bucket brigade): |
This subclass is indented under subclass 215. Subject matter wherein the charge transferred is less than the entire charge stored in the storage site from which it originates. | |
252 | . Responsive to non-optical, non-electrical signal: |
This subclass is indented under subclass 213. Subject matter which produces an electrical output in response to an input which is other than optical or electrical. | |
253 | .. Chemical (e.g., ISFET, CHEMFET): |
This subclass is indented under subclass 252. Subject matter wherein the input is a chemical reaction or the presence of a particular chemical in close proximity to the field effect device. | |
254 | .. Physical deformation (e.g., strain sensor, acoustic wave detector): |
This subclass is indented under subclass 252. Subject matter wherein the input is a physical deformation.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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255 | . With current flow along specified crystal axis (e.g., axis of maximum carrier mobility): |
This subclass is indented under subclass 213. Subject matter wherein the field effect device employs current flow along a specified crystal axis, such as a (100) axis or a (311) axis. | |
256 | . Junction field effect transistor (unipolar transistor): |
This subclass is indented under subclass 213. Subject matter wherein the field effect device is a junction
field effect transistor, i.e., in which current flow through a
thin channel of semiconductor material is controlled by an electric
field applied to a control region or electrode in rectifying contact
(i.e., a pn junction or Schottky barrier junction) with the semiconductor
material of the channel, so that the depletion region extending
into the channel from the rectifying contact reduces the thickness
of the undepleted portion of the channel to reduce the current flow
through the channel.
SEE OR SEARCH CLASS:
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257 | .. Light responsive or combined with light responsive device: |
This subclass is indented under subclass 256. Subject matter wherein the JFET generates an electrical signal when light energy is incident upon it or is combined with a light responsive device. | |
258 | ... In imaging array: |
This subclass is indented under subclass 257. Subject matter wherein a plurality of light responsive JFETs or JFETs combined with a light responsive device are in the form of a one or two dimensional array (e.g., line or area array) for forming an image of an object, light from which is incident upon the array. | |
259 | .. Elongated active region acts as transmission line or distributed active element (e.g., "transmission line" field effect transistor): |
This subclass is indented under subclass 256. Subject matter including at least one elongated active region
(source, gate, or drain) which transmits or distributes charge carriers.
SEE OR SEARCH CLASS:
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260 | .. Same channel controlled by both junction and insulated gate electrodes, or by both Schottky barrier and pn junction gates (e.g., "taper isolated" memory cell): |
This subclass is indented under subclass 256. Subject matter including plural gate electrodes or regions,
at least one of which is isolated from the channel by a rectifying
junction and at least another of which is isolated from the channel
by an insulating layer therebetween, or wherein one rectifying junction
may be a metal-to-semiconductor (Schottky) type and the other a
pn junction.
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261 | .. Junction gate region free of direct electrical connection (e.g., floating junction gate memory cell structure): |
This subclass is indented under subclass 256. Subject matter including at least one gate electrode region
which is isolated from the channel by a rectifying junction and
is not directly provided with an electrical connection or terminal.
| |||||||
262 | .. Combined with insulated gate field effect transistor (IGFET): |
This subclass is indented under subclass 256. Subject matter including a field effect transistor having
a gate (control) electrode which is electrically insulated from
the channel and other electrodes of the transistor.
| |||
263 | .. Vertical controlled current path: |
This subclass is indented under subclass 256. Subject matter wherein the operating current of the JFET has a path perpendicular to a main surface of the JFET and is controlled by the gate electrode of the device. | |
264 | ... Enhancement mode or with high resistivity channel (e.g., doping of 1015cm-3 or less): |
This subclass is indented under subclass 263. Subject matter wherein an increase in the magnitude of the gate bias voltage increases the operating current, only leakage current flows when the gate voltage is zero, and conduction does not begin until the gate voltage reaches a threshold value; or the JFET has a channel made of relatively high electrical resistivity, e.g., due to doping with impurity ions of 1015 cm-3or less. | |
265 | ... In integrated circuit: |
This subclass is indented under subclass 263. Subject matter in a single monolithic semiconductor chip with other active and/or passive devices. | |
266 | ... With multiple parallel current paths (e.g., grid gate): |
This subclass is indented under subclass 263. Subject matter having plural paths for operating current flow, each of which is parallel with the other paths (e.g., having a gate electrode in the form of a matrix or grid). | |
267 | .... With Schottky barrier gate: |
This subclass is indented under subclass 266. Subject matter including a gate which is formed by a metal to semiconductor rectifying junction. | |
268 | .. Enhancement mode: |
This subclass is indented under subclass 256. Subject matter wherein an increase in the magnitude of the gate bias voltage increases the operating current, only leakage current flows when the gate voltage is zero, and conduction does not begin until the gate voltage reaches a threshold value. | |
269 | ... With means to adjust barrier height (e.g., doping profile): |
This subclass is indented under subclass 268. Subject matter including means to adjust the electronic height of the Schottky barrier gate junction, e.g., a profiled impurity dopant concentration. | |
270 | .. Plural, separately connected, gates control same channel region: |
This subclass is indented under subclass 256. Subject matter including more than one gate region or portion to control the same channel region, the regions being provided with separate electrical connections. | |
271 | .. Load element or constant current source (e.g., with source to gate connection): |
This subclass is indented under subclass 256. Subject matter structured to function as an electrical load element or a source of constant current, e.g., with a source to gate electrical connection. | |
272 | .. Junction field effect transistor in integrated circuit: |
This subclass is indented under subclass 256. Subject matter located in a single monolithic semiconductor chip with other active and/or passive devices. | |
273 | ... With bipolar device: |
This subclass is indented under subclass 272. Subject matter located in an integrated circuit with a device
which operates using both positive and negative charge carriers.
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274 | ... Complementary junction field effect transistors: |
This subclass is indented under subclass 272. Subject matter which is located in and integrated with an opposite conductivity type JFET, i.e., an N channel JFET together with a P channel JFET. | |
275 | ... Microwave integrated circuit (e.g., microstrip type): |
This subclass is indented under subclass 272. Subject matter structured to operate at microwave frequencies in an integrated circuit containing microwave components (e.g., microstrip transmission lines). | |
276 | .... With contact or heat sink extending through hole in semiconductor substrate, or with electrode suspended over substrate (e.g., air bridge): |
This subclass is indented under subclass 275. Subject matter containing a hole in the semiconductor substrate
and an electrical contact or a heat dissipation means extending
through the hole.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
277 | .... With capacitive or inductive elements: |
This subclass is indented under subclass 275. Subject matter having passive elements with electrical inductance or capacitance. | |
278 | ... With devices vertically spaced in different layers of semiconductor material (e.g., "3-dimensional" integrated circuit): |
Subject matter under 272 wherein the JFET and other active and/or passive devices in that chip are located in mutually perpendicular planes in different layers of semiconductor device material. | |
279 | .. Pn junction gate in compound semiconductor material (e.g., GaAs): |
This subclass is indented under subclass 256. Subject matter including a pn junction gate formed in a semiconductor material that is a compound, e.g., GaAs, as contrasted to an elemental semiconductor such as silicon or germanium. | |
280 | .. With Schottky gate: |
This subclass is indented under subclass 256. Subject matter including a metal to semiconductor rectifying
(i.e., Schottky barrier) gate electrode.
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281 | ... Schottky gate to silicon semiconductor: |
This subclass is indented under subclass 280. Subject matter wherein the semiconductor material contacting the gate electrode material is made of silicon. | |
282 | ... Gate closely aligned to source region: |
This subclass is indented under subclass 280. Subject matter wherein the gate region is closely aligned
with the source region.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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283 | .... With groove or overhang for alignment: |
This subclass is indented under subclass 282. Subject matter wherein the device has a groove or overhang for alignment of the gate and source regions. | |
284 | ... Schottky gate in groove: |
This subclass is indented under subclass 280. Subject matter wherein the MESFET has a groove in at least one of its surfaces and the Schottky gate is located therein. | |
285 | .. With profiled channel dopant concentration or profiled gate region dopant concentration (e.g., maximum dopant concentration below surface): |
This subclass is indented under subclass 256. Subject matter wherein the JFET has a variable impurity atom dopant concentration in the channel or gate region, e.g., wherein the maximum dopant concentration is located below the surface of the device, in either the channel or gate region. | |
286 | .. With non-uniform channel thickness or width: |
This subclass is indented under subclass 256. Subject matter wherein the channel has a non-uniform width
or thickness (which lies in a plane perpendicular to both the channel
length and width).
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287 | .. With multiple channels or channel segments connected in parallel, or with channel much wider than length between source and drain (e.g., power JFET): |
This subclass is indented under subclass 256. Subject matter including more than one channel or channel
segments/portions which are electrically connected in parallel,
or wherein the device has a channel whose width is much wider than
the channel length, the channel length being the distance between
the source and drain of the JFET.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
288 | . Having insulated electrode (e.g., MOSFET, MOS diode): |
This subclass is indented under subclass 213. Subject matter including an electrode which is electrically
insulated from the active semiconductor region of the device (e.g.,
a metal oxide semiconductor insulated electrode).
SEE OR SEARCH CLASS:
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289 | .. Significant semiconductor chemical compound in bulk crystal (e.g., GaAs): |
This subclass is indented under subclass 288. Subject matter wherein the insulated electrode field effect
device contains a significant semiconductor chemical compound in
a bulk (as contrasted with thin film) crystal (e.g., GaAs).
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
290 | .. Light responsive or combined with light responsive device: |
This subclass is indented under subclass 288. Subject matter which generates an electrical signal when light is incident on it or is combined with a light responsive device. | |
291 | ... Imaging array: |
This subclass is indented under subclass 290. Subject matter comprising a one or more dimensional array of light responsive devices which generate an electronic image of light from an object incident thereupon. | |
292 | .... Photodiodes accessed by FETs: |
This subclass is indented under subclass 291. Subject matter comprising light responsive diodes electrically coupled to field effect transistors. | |
293 | .... Photoresistors accessed by FETs, or photodetectors separate from FET chip: |
This subclass is indented under subclass 291. Subject matter comprising light responsive resistors coupled to field effect transistors. | |
294 | .... With shield, filter, or lens: |
This subclass is indented under subclass 291. Subject matter including means to shield the array from unwanted light, to filter light incident on the array, or to refract light incident on the array (e.g., to focus an image of an object on the array). | |
295 | .. With ferroelectric material layer: |
This subclass is indented under subclass 288. Subject matter including a layer of material which exhibits a spontaneous dipole moment. | |
296 | .. Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell): |
This subclass is indented under subclass 288. Subject matter wherein the device gate acts as a capacitor
(i.e., wherein a positive potential placed on the gate electrode
creates a negative charge on the other side of the insulator in
the semiconductor material of the device, and vice versa) or the
device is a transistor and it is combined with a capacitor.
SEE OR SEARCH CLASS:
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297 | ... With means for preventing charge leakage due to minority carrier generation (e.g., alpha generated soft error protection or "dark current" leakage protection): |
This subclass is indented under subclass 296. Subject matter wherein the device further includes means
(1) to prevent electrical charge in the capacitor or capacitive
type insulated gate region of the transistor to leak therefrom, or
(2) to prevent excess leakage currents across pn junctions due
to generation of minority carriers in the device for example (a)
alpha particles incident on the device or (b) thermal generation
of electron-hole pairs, or (c) minority carriers injected into
the semiconductor substrate by other devices in the same substrate.
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298 | ... Capacitor for signal storage in combination with non-volatile storage means: |
This subclass is indented under subclass 296. Subject matter including a capacitor to store an electrical signal in combination with charge storage means that can retain the charge even in the absence of operating power. | |
299 | ... Structure configured for voltage converter (e.g., charge pump, substrate bias generator): |
This subclass is indented under subclass 296. Subject matter including structure for use as a voltage converter (e.g., a device for changing AC to DC or vice versa, or for producing a negative DC voltage relative to a reference potential from a positive DC voltage relative to that reference potential). | |
300 | ... Capacitor coupled to, or forms gate of, insulated gate field effect transistor (e.g., non-destructive readout dynamic memory cell structure): |
This subclass is indented under subclass 296. Subject matter wherein the capacitor is electrically connected to or forms the gate of an insulated gate field effect transistor (IGFET), e.g., a non-destructive readout dynamic memory cell structure in which the charge state of the capacitor may be read out or determined by the conduction state of the field effect transistor, without discharging the capacitor in the readout process. | |
301 | ... Capacitor in trench: |
This subclass is indented under subclass 296. Subject matter wherein the capacitor is located in a recess in the semiconductor substrate. | |
302 | .... Vertical transistor: |
This subclass is indented under subclass 301. Subject matter combined with a vertical transistor (i.e., one in which the operating current flow is perpendicular to a main surface of the device). | |
303 | .... Stacked capacitor: |
This subclass is indented under subclass 301. Subject matter wherein the trench capacitor device contains a number of capacitor electrode regions stacked vertically above each other or wherein the capacitor and the transistor are located such that one overlies the other. | |
304 | .... Storage node isolated by dielectric from semiconductor substrate: |
This subclass is indented under subclass 301. Subject matter including an electrode upon which the charge varies as an indication of the memory state of the device (e.g., memory cell), and wherein the electrode is electrically isolated by a dielectric material from the semiconductor substrate of the device. | |
305 | .... With means to insulate adjacent storage nodes (e.g., channel stops or field oxide): |
This subclass is indented under subclass 301. Subject matter including means for electrically insulating
an electrode upon which the charge varies as an indication of the
memory state of the device (e.g., a memory cell).
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306 | ... Stacked capacitor: |
This subclass is indented under subclass 296. Subject matter wherein the capacitor device contains a number of capacitor electrode regions overlying each other or where the capacitor and the transistor are located such that one overlies the other. | |
307 | .... Parallel interleaved capacitor electrode pairs (e.g., interdigitized): |
This subclass is indented under subclass 306. Subject matter wherein the number of overlying capacitor electrodes is more than one and the overlapping region of each capacitor electrode pair is made up of electrodes from one capacitor interleaved with the electrodes of another capacitor. | |
308 | ..... With capacitor electrodes connection portion located centrally thereof (e.g., fin electrodes with central post): |
This subclass is indented under subclass 307. Subject matter wherein the capacitor electrodes are connected together at a centrally located portion thereof, e.g., by a center post. | |
309 | .... With increased effective electrode surface area (e.g., tortuous path, corrugated, or textured electrodes): |
This subclass is indented under subclass 306. Subject matter wherein a capacitor electrode has an increased effective surface relative to a flat capacitor plate, because of twists, turns, curves, corrugations, windings or other surface area increasing features of a capacitor electrode. | |
310 | ... With high dielectric constant insulator (e.g., Ta2O5): |
This subclass is indented under subclass 296. Subject matter wherein the capacitor device includes an insulating element which has a dielectric constant (e.g., Ta2O5) greater than 7.5, the dielectric constant of Si3N4. | |
311 | ... Storage Node isolated by dielectric from semiconductor substrate: |
This subclass is indented under subclass 296. Subject matter wherein the device has an electrode upon which the charge varies as an indication of the memory state of the device (e.g., memory cell) which electrode is electrically isolated by a dielectric material from the semiconductor substrate of the device. | |
312 | ... Voltage variable capacitor (i. e., capacitance varies with applied voltage): |
This subclass is indented under subclass 296. Subject matter wherein the device changes its capacitance depending on the amount of voltage applied thereto. | |
313 | ... Inversion layer capacitor: |
This subclass is indented under subclass 296. Subject matter wherein one plate of the capacitor device is a layer of minority carriers opposite in conductivity type to the doping of the semiconductor which are induced by applied voltage. | |
314 | .. Variable threshold (e.g., floating gate memory device): |
This subclass is indented under subclass 288. Subject matter wherein the device has a threshold voltage
for current conduction which may be varied (e.g., by storage of
charge in an insulator layer adjacent the channel in response to an
electrical "write" signal).
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
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315 | ... With floating gate electrode: |
This subclass is indented under subclass 314. Subject matter including a gate electrode which is free
of direct electrical connection.
SEE OR SEARCH CLASS:
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316 | .... With additional contacted control electrode: |
This subclass is indented under subclass 315. Subject matter including an additional control (gate) electrode that has a direct electrical contact thereto. | |
317 | ..... With irregularities on electrode to facilitate charging or discharging of floating electrode: |
This subclass is indented under subclass 316. Subject matter wherein the floating or additional control (gate) electrode has physical surface irregularities to facilitate charging or discharging of the floating gate electrode. | |
318 | ..... Additional control electrode is doped region in semiconductor substrate: |
This subclass is indented under subclass 316. Subject matter wherein the additional control (gate) electrode is a specific region in the semiconductor substrate which is doped with impurity ions. | |
319 | ..... Plural additional contacted control electrodes: |
This subclass is indented under subclass 316. Subject matter including more than one additional control (gate) electrode. | |
320 | ...... Separate control electrodes for charging and for discharging floating electrode: |
This subclass is indented under subclass 319. Subject matter wherein the device has separate control (gate) electrodes for charging and discharging a floating electrode. | |
321 | ..... With thin insulator region for charging or discharging floating electrode by quantum mechanical tunneling: |
This subclass is indented under subclass 316. Subject matter including a thin insulator region for charging
of discharging a floating electrode by means of quantum mechanical
tunneling of charge carriers.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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322 | ..... With charging or discharging by control voltage applied to source or drain region (e.g., by avalanche breakdown of drain junction): |
This subclass is indented under subclass 316. Subject matter wherein the variable threshold device is structured to charge or discharge a floating gate electrode by a control voltage applied to source or drain region (e.g., by avalanche breakdown of drain junction). | |
323 | .... With means to facilitate light erasure: |
This subclass is indented under subclass 315. Subject matter including means to make erasure of the electrical charge content of the device by light easier (e.g., by providing an ultraviolet light window layer over the floating gate electrode to reduce absorption of erasing light). | |
324 | ... Multiple insulator layers (e.g., MNOS structure): |
This subclass is indented under subclass 314. Subject matter including more than one layer of electrically insulating material (e.g., metal-nitride-oxide (MNOS) semiconductor). | |
325 | .... Non-homogeneous composition insulator layer (e.g., graded composition layer or layer with inclusions): |
This subclass is indented under subclass 324. Subject matter wherein at least one layer has a non-homogeneous composition (e.g., a layer which varies in composition along at least one dimension thereof, or has inclusions of foreign material therein). | |
326 | .... With additional, non-memory control electrode or channel portion (e.g., accessing field effect transistor structure): |
This subclass is indented under subclass 324. Subject matter wherein the multiple insulator layer device has an additional, non-memory control electrode or channel portion, for example, for forming an accessing field effect transistor structure. | |
327 | .. Short channel insulated gate field effect transistor: |
This subclass is indented under subclass 288. Subject matter wherein the field effect device is an insulated gate field effect transistor with a short channel (i.e., one wherein the length of the channel is sufficiently short that the threshold voltage of the transistor depends on the length of the channel, or where the channel is specified to be less than 2 micrometers in length). | |
328 | ... Vertical channel or double diffused insulated gate field effect device provided with means to protect against excess voltage (e.g., gate protection diode): |
This subclass is indented under subclass 327. Subject matter wherein the short channel IGFET has a vertical
current channel structure or the short channel IGFETs active channel region
has a graded dopant concentration decreasing with distance from
source region (e.g., double diffused, DMOS transistor) and wherein
means are provided to protect the short channel against overvoltages
(e.g., a gate insulator protection diode).
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329 | ... Gate controls vertical charge flow portion of channel (e.g., VMOS device): |
This subclass is indented under subclass 327. Subject matter wherein the short channel IGFET has a channel
portion in which charge flows in a substantially vertical direction
and wherein the charge flowing therein is controlled by the gate
electrode.
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330 | .... Gate electrode in groove: |
This subclass is indented under subclass 329. Subject matter wherein the gate controlled vertical channel device has a groove located therein and a gate electrode located in the groove. | |
331 | ..... Plural gate electrodes or grid shaped gate electrode: |
This subclass is indented under subclass 330. Subject matter wherein there is more than one gate electrode located in a groove or wherein the gate electrode has a grid or mesh type shape. | |
332 | ..... Gate electrode self-aligned with groove: |
This subclass is indented under subclass 330. Subject matter wherein the gate electrode is self-aligned
with the groove.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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333 | ..... With thick insulator to reduce gate capacitance in non-channel areas (e.g., thick oxide over source or drain region): |
This subclass is indented under subclass 330. Subject matter wherein the device with a gate electrode in a groove is provided with a thick insulator material layer to reduce gate capacitance in non-channel areas, e.g., a thick layer of oxide located over the source or drain region. | |
334 | ..... In integrated circuit structure: |
This subclass is indented under subclass 330. Subject matter wherein the device is located in an integrated circuit structure. | |
335 | ... Active channel region has a graded dopant concentration decreasing with distance from source region (e.g., double diffused device, DMOS transistor): |
This subclass is indented under subclass 327. Subject matter wherein the short channel IGFET"s active channel region has a graded dopant concentration decreasing with distance from source region, e.g., double diffused device or a DMOS transistor. | |
336 | .... With lightly doped portion of drain region adjacent channel (e.g., LDD structure): |
This subclass is indented under subclass 335. Subject matter wherein the graded channel doping short channel IGFET has a relatively light concentration of dopant in the portion of the drain region which lies adjacent to the current conducting channel. | |
337 | .... In integrated circuit structure: |
This subclass is indented under subclass 335. Subject matter wherein the graded channel doping short channel IGFET is contained in a single monolithic chip with other active or passive solid-state electronic devices. | |
338 | ..... With complementary field effect transistor: |
This subclass is indented under subclass 337. Subject matter wherein the graded channel doping short channel IGFET is contained in a single monolithic chip with a field effect transistor with a polarity type opposite to that of the graded channel doping short channel IGFET. | |
339 | .... With means to increase breakdown voltage: |
This subclass is indented under subclass 335. Subject matter wherein the graded channel doping short channel IGFET includes means to increase the voltage that may be applied to the device without electrical breakdown of the device occurring. | |
340 | .... With means (other than self-alignment of the gate electrode) to decrease gate capacitance (e.g., shield electrode): |
This subclass is indented under subclass 335. Subject matter wherein the graded channel doping short channel IGFET has means (other than self-alignment of the gate electrode) (e.g., an shielding electrode) to decrease the capacitance of the gate electrode. | |
341 | .... Plural sections connected in parallel (e.g., power MOSFET): |
This subclass is indented under subclass 335. Subject matter wherein the graded channel doping short channel IGFET has more than one section and a plurality of those sections are connected electrically in parallel (e.g., to form a power MOSFET). | |
342 | ..... With means to reduce ON resistance: |
This subclass is indented under subclass 341. Subject matter wherein the device further contains means to reduce the resistance of the device when it is conducting electricity, i.e., in the ON condition. | |
343 | .... All contacts on same surface (e.g., lateral structure): |
This subclass is indented under subclass 335. Subject matter wherein all electrical contacts of the device are located on the same external surface of the device, e.g., a lateral structure device. | |
344 | ... With lightly doped portion of drain region adjacent channel (e.g., LDD structure): |
This subclass is indented under subclass 327. Subject matter wherein the short channel IGFET has a lightly doped portion of the drain region adjacent channel (e.g., a lightly doped drain structure). | |
345 | ... With means to prevent sub-surface currents, or with non-uniform channel doping: |
This subclass is indented under subclass 327. Subject matter wherein the short channel IGFET contains means to prevent current from flowing below the surface of the device. | |
346 | ... Gate electrode overlaps the source or drain by no more than depth of source or drain (e.g., self-aligned gate): |
This subclass is indented under subclass 327. Subject matter wherein the short channel IGFET has a gate
electrode which overlaps the source or drain or both by no more
than the thickness of the depth of the source or drain (e.g., a
self-aligned gate).
SEE OR SEARCH THIS CLASS, SUBCLASS:
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347 | .. Single crystal semiconductor layer on insulating substrate (SOI): |
This subclass is indented under subclass 288. Subject matter wherein the field effect device has a single
crystal semiconductor layer located on a substrate made of electrically
insulating material.
SEE OR SEARCH CLASS:
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348 | ... Depletion mode field effect transistor: |
This subclass is indented under subclass 347. Subject matter wherein the SOI device is a field effect transistor which operates in the depletion mode, i.e., a FET which passes maximum operating current with the gate to source biased to zero volts. | |
349 | ... With means (e.g., a buried channel stop layer) to prevent leakage current along the interface of the semiconductor layer and the insulating substrate: |
This subclass is indented under subclass 347. Subject matter wherein the SOI device includes means to
prevent undesirable stray current to flow along the interface between
the semiconductor layer and the insulating substrate.
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350 | ... Insulated electrode device is combined with diverse type device (e.g., complementary MOSFETs, FET with resistor, etc.): |
This subclass is indented under subclass 347. Subject matter wherein the SOI device is combined with a different solid-state active or passive device, e.g., to form complementary MOSFETs or a FET combined with a resistor, etc. | |
351 | .... Complementary field effect transistor structures only (i.e., not including bipolar transistors, resistors, or other components): |
This subclass is indented under subclass 350. Subject matter wherein the field effect transistor and the diverse type device are field effect transistors which are complementary in conductivity type to each other (e.g., provide a CMOS structure). | |
352 | ... Substrate is single crystal insulator (e.g., sapphire or spinel): |
This subclass is indented under subclass 347. Subject matter wherein the SOI substrate is a single crystal insulator (e.g., sapphire or spinel). | |
353 | .... Single crystal islands of semiconductor layer containing only one active device: |
This subclass is indented under subclass 352. Subject matter wherein the single crystal insulator SOI substrate contains single crystal islands of semiconductor material, each island containing only one active solid-state device. | |
354 | ..... Including means to eliminate island edge effects (e.g., insulating filling between islands, or ions in island edges): |
This subclass is indented under subclass 353. Subject matter wherein means are provided to eliminate deleterious effects caused by the edges of each island, such means including, for example, electrically insulating filling between islands, or channel stop regions located in the edges of islands. | |
355 | .. With overvoltage protective means: |
This subclass is indented under subclass 288. Subject matter wherein the device has means to protect it against applied voltage which exceeds that which the device can tolerate before being damaged. | |
356 | ... For protecting against gate insulator breakdown: |
This subclass is indented under subclass 355. Subject matter wherein the overvoltage protection means is structured to protect against electrical breakdown (shorting) of the gate insulator. | |
357 | .... In complementary field effect transistor integrated circuit: |
This subclass is indented under subclass 356. Subject matter wherein the device includes complementary field effect transistors located in a single monolithic chip. | |
358 | ..... Including resistor element: |
This subclass is indented under subclass 357. Subject matter wherein the device includes an electrical resistor. | |
359 | ...... As thin film structure (e.g., polysilicon resistor): |
This subclass is indented under subclass 358. Subject matter wherein the resistor is in the form of a thin film resistor (e.g., a polysilicon resistor). | |
360 | .... Protection device includes insulated gate transistor structure (e.g., combined with resistor element): |
This subclass is indented under subclass 356. Subject matter wherein the means for protecting against insulator breakdown is an insulated gate transistor structure. | |
361 | ..... For operation as bipolar or punchthrough element: |
This subclass is indented under subclass 360. Subject matter wherein the insulated gate transistor structure protection device is configured to operate as a bipolar transistor or to conduct by punchthrough of a depletion region from one pn junction to another pn junction upon application of an overvoltage. | |
362 | .... Punchthrough or bipolar element: |
This subclass is indented under subclass 356. Subject matter wherein the means for protecting against insulator breakdown is a bipolar device or is configured to conduct by punchthrough of a depletion region from one pn junction to another pn junction upon application of an overvoltage. | |
363 | .... Including resistor element: |
This subclass is indented under subclass 356. Subject matter including an electrical resistive element. | |
364 | .. With resistive gate electrode: |
This subclass is indented under subclass 288. Subject matter including a gate (control) electrode which has high electrical resistivity. | |
365 | .. With plural, separately connected, gate electrodes in same device: |
This subclass is indented under subclass 288. Subject matter wherein the device has more than one gate (control) electrode, in the same device, with separate electrical connections to the plural gate (control) electrodes. | |
366 | ... Overlapping gate electrodes: |
This subclass is indented under subclass 365. Subject matter wherein at least one of the plural gate electrodes overlaps another gate electrode. | |
367 | .. Insulated gate controlled breakdown of pn junction (e.g., field plate diode): |
Subject matter under 288 including an electrically insulated gate electrode which is used to control the voltage applied to the device to cause breakdown of the pn junction. | |
368 | .. Insulated gate field effect transistor in integrated circuit: |
This subclass is indented under subclass 288. Subject matter wherein the device is an insulated gate field effect transistor located in a single monolithic semiconductor chip circuit. | |
369 | ... Complementary insulated gate field effect transistors: |
This subclass is indented under subclass 368. Subject matter wherein the device is made up of IGFETs that have opposite conductivity channels (p-type and n-type). | |
370 | .... Combined with bipolar transistor: |
This subclass is indented under subclass 369. Subject matter including at least one bipolar transistor.
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371 | .... Complementary transistors in wells of opposite conductivity types more heavily doped than the substrate region in which they are formed, e.g., twin wells: |
This subclass is indented under subclass 369. Subject matter wherein the complementary IGFETs are located in wells of semiconductor material with electrical conductivity opposite to that of the respective transistors and wherein the wells contain a higher concentration of dopant ions than the semiconductor substrate in which they are located (e.g., twin wells). | |
372 | .... With means to prevent latchup or parasitic conduction channels: |
This subclass is indented under subclass 369. Subject matter including means to prevent conduction between
regions of complementary IGFETs which form a (parasitic) regenerative structure
which remains ON in the absence of a triggering signal.
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373 | .... With pn junction to collect injected minority carriers to prevent parasitic bipolar transistor action: |
This subclass is indented under subclass 372. Subject matter wherein the means for preventing latchup includes a pn junction for collecting minority carriers injected into the device to prevent operation of parasitic bipolar transistors which are otherwise capable of forming part of a parasitic regenerative switching structure. | |
374 | ..... Dielectric isolation means (e.g., dielectric layer in vertical grooves): |
This subclass is indented under subclass 372. Subject matter wherein the means to prevent latchup includes means to dielectrically isolate the individual IGFETs from each other. | |
375 | ..... With means to reduce substrate spreading resistance (e.g., heavily doped substrate): |
This subclass is indented under subclass 372. Subject matter wherein the means to prevent latchup includes means to reduce the electrical resistance of the substrate to reduce voltage differences between different parts of the substrate due to currents flowing therethrough. | |
376 | ..... With barrier region of reduced minority carrier lifetime (e.g., heavily doped P+ region to reduce electron minority carrier lifetime, or containing deep level impurity or crystal damage), or with region of high threshold voltage (e.g., heavily doped channel stop region): |
This subclass is indented under subclass 372. Subject matter wherein the means to prevent latchup includes an electrical barrier region whose minority carrier lifetime is reduced from its normal value (e.g., by employing heavily doped P+ region to reduce electron minority carrier lifetime, or contains a deep level impurity or crystal damage) or has a region of high threshold voltage (e.g., a heavily doped channel stop region). | |
377 | .... With polysilicon interconnections to source or drain regions (e.g., polysilicon laminated with silicide): |
This subclass is indented under subclass 369. Subject matter wherein the device contains electrical interconnections to the source and/or drain regions of the IGFETs which are made of polycrystalline silicon (e.g., polysilicon laminated with a silicide). | |
378 | ... Combined with bipolar transistor: |
This subclass is indented under subclass 368. Subject matter wherein the IGFET is combined with a bipolar
transistor in a single semiconductor chip.
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379 | ... Combined with passive components (e.g., resistors): |
This subclass is indented under subclass 368. Subject matter wherein the IGFET is combined with passive electronic solid-state devices (e.g., resistors, inductors, transmission lines, etc.) in the integrated circuit. | |
380 | .... Polysilicon resistor: |
This subclass is indented under subclass 379. Subject matter wherein the device is combined with a resistor made of a polycrystalline form of silicon. | |
381 | .... With multiple levels of polycrystalline silicon: |
This subclass is indented under subclass 380. Subject matter wherein the integrated circuit has more than one layer of polycrystalline silicon. | |
382 | ... With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide): |
This subclass is indented under subclass 368. Subject matter wherein the device has an electrical contact
to its source region or drain region wherein the contact is made
of a refractory or platinum group metal, or of other material which
has a melting point above that of the iron group of metals and which
is resistant to heat (e.g., of polysilicon, tungsten or silicide).
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383 | .... Contact of refractory or platinum group metal (e.g., molybdenum, tungsten, or titanium): |
This subclass is indented under subclass 382. Subject matter wherein the contact to the source or drain region is made of a refractory or platinum group metal (e.g., molybdenum, tungsten, or titanium). | |
384 | .... Including silicide: |
This subclass is indented under subclass 382. Subject matter wherein the contacts are made of a silicide. | |
385 | .... Multiple polysilicon layers: |
This subclass is indented under subclass 382. Subject matter wherein the refractory material contact to source or drain region includes more than one layer of polysilicon. | |
386 | ... With means to reduce parasitic capacitance: |
This subclass is indented under subclass 368. Subject matter wherein the device contains means to reduce unwanted capacitance between elements of the field effect transistor. | |
387 | .... Gate electrode overlaps at least one of source or drain by no more than depth of source or drain (e.g., self-aligned gate): |
This subclass is indented under subclass 386. Subject matter wherein the gate electrode overlaps at least
one source or drain by no more than the depth of the source or the
drain (e.g., self-aligned gate).
SEE OR SEARCH THIS CLASS, SUBCLASS:
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388 | ..... Gate electrode consists of refractory or platinum group metal or silicide: |
This subclass is indented under subclass 387. Subject matter wherein the gate electrode contains only refractory or platinum group metal (e.g., molybdenum, titanium or tungsten, or a silicide). | |
389 | .... With thick insulator over source or drain region: |
This subclass is indented under subclass 386. Subject matter wherein the means to reduce the parasitic capacitance is a thick insulating material layer located over the source or drain region. | |
390 | ... Matrix or array of field effect transistors (e.g., array of FETs only some of which are completed, or structure for mask programmed read-only memory (ROM)): |
This subclass is indented under subclass 368. Subject matter wherein the integrated circuit contains a two dimensional array of IGFETs, only some of which are completed devices, or the integrated circuit contains structure for a mask programmed read-only memory device. | |
391 | .... Selected groups of complete field effect devices having different threshold voltages (e.g., different channel dopant concentrations): |
This subclass is indented under subclass 390. Subject matter wherein selected groups of complete IGFETs have different threshold voltages above which the IGFETs will operate (e.g., different IGFETs have different current carrying channel impurity dopant concentrations). | |
392 | ... Insulated gate field effect transistors of different threshold voltages in same integrated circuit (e.g., enhancement and depletion mode): |
This subclass is indented under subclass 368. Subject matter wherein the IGFETs have different threshold voltages in the same integrated circuit (e.g., both enhancement and depletion mode IGFETs in the same integrated circuit). | |
393 | ... Insulated gate field effect transistor adapted to function as load element for switching insulated gate field effect transistor: |
This subclass is indented under subclass 368. Subject matter wherein the device is configured to function as a load element for another IGFET which is switched OFF and ON by signals applied thereto. | |
394 | ... With means to prevent parasitic conduction channels: |
This subclass is indented under subclass 368. Subject matter wherein the device includes means to prevent the formation of unwanted parasitic field effect transistor elements. | |
395 | .... Thick insulator portion: |
This subclass is indented under subclass 394. Subject matter wherein the means to prevent parasitic conduction channels from forming includes a thick insulator portion. | |
396 | ..... Recessed into semiconductor surface: |
This subclass is indented under subclass 395. Subject matter wherein the thick insulator portion is recessed into the semiconductor device surface. | |
397 | ...... In vertical-walled groove: |
This subclass is indented under subclass 396. Subject matter wherein the recessed thick isolator portion is in a groove in the surface of the overall device which extends perpendicular to the surface of the overall device. | |
398 | ...... Combined with heavily doped channel stop portion: |
This subclass is indented under subclass 396. Subject matter wherein the device is combined with regions of heavy doping concentration. | |
399 | ..... Combined with heavily doped channel stop portion: |
This subclass is indented under subclass 395. Subject matter wherein the device is combined with regions of heavy doping concentration. | |
400 | .... With heavily doped channel stop portion: |
This subclass is indented under subclass 394. Subject matter wherein the means to prevent parasitic conduction channels from forming comprises a region of heavy doping concentration. | |
401 | ... With specified physical layout (e.g., ring gate, source/drain regions shared between plural FETs, plural sections connected in parallel to form power MOSFET): |
This subclass is indented under subclass 368. Subject matter wherein the device has a specific physical configuration or layout (e.g., ring gate). | |
402 | .. With permanent threshold adjustment (e.g., depletion mode): |
This subclass is indented under subclass 288. Subject matter wherein the device includes means for permanently adjusting the threshold voltage at which the device conducts (e.g., depletion mode IGFETs). | |
403 | ... With channel conductivity dopant same type as that of source and drain: |
This subclass is indented under subclass 402. Subject matter wherein the device has a channel which is doped with impurity dopant to be the same conductivity type (n or p) as the source and drain. | |
404 | .... Non-uniform channel doping: |
This subclass is indented under subclass 403. Subject matter wherein the dopant concentration varies along at least one dimension of the channel. | |
405 | ... With gate insulator containing specified permanent charge: |
This subclass is indented under subclass 402. Subject matter wherein the device has a gate insulator with a specified permanent electrostatic charge therein. | |
406 | .... Plural gate insulator layers: |
This subclass is indented under subclass 405. Subject matter wherein the gate insulator is made up of a plurality of gate insulator layers. | |
407 | ... With gate electrode of controlled workfunction material (e.g., low workfunction gate material): |
This subclass is indented under subclass 402. Subject matter wherein the device has a gate electrode selected
to have a controlled amount of minimum energy needed to be applied thereto
to liberate an electron from its Fermi-level and send it into free
space.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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408 | .. Including lightly doped drain portion adjacent channel (e.g., lightly doped drain, LDD device): |
This subclass is indented under subclass 288. Subject matter wherein the device includes a drain portion adjacent the current channel which is lightly doped with impurities. | |
409 | .. With means to increase breakdown voltage (e.g., field shield electrode, guard ring, etc.): |
This subclass is indented under subclass 288. Subject matter wherein the device has means to increase the voltage that can be applied to the device without causing electrical breakdown of the device. | |
410 | .. Gate insulator includes material (including air or vacuum) other than SiO2: |
This subclass is indented under subclass 288. Subject matter wherein the gate electrode insulator includes material other than silicon dioxide. | |
411 | ... Composite or layered gate insulator (e.g., mixture such as silicon oxynitride): |
This subclass is indented under subclass 410. Subject matter wherein the gate insulator is made of a composite material or layers of different materials. | |
412 | .. Gate electrode of refractory material (e.g., polysilicon or a silicide of a refractory or platinum group metal): |
This subclass is indented under subclass 288. Subject matter wherein the device has a gate electrode which is made of a refractory material (e.g., polysilicon or a silicide of a metal found in groups IVA, VA, VIA, or VIIIA (other than iron (Fe), nickel (Ni) or cobalt (Co)) of the periodic table of the elements. | |
413 | ... Polysilicon laminated with silicide: |
This subclass is indented under subclass 412. Subject matter wherein the refractory material is a laminate comprising at least one layer of polysilicon and one layer of a silicide. | |
414 | RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS): |
This subclass is indented under the class definition. Subject matter wherein the device generates an electrical signal in response to a non-electrical signal (e.g., light, heat, pressure) incident thereon. | |
415 | . Physical deformation: |
This subclass is indented under subclass 414. Subject matter wherein the non-electrical signal incident
upon the active solid-state device is a force which physically deforms
the device.
SEE OR SEARCH CLASS:
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416 | .. Acoustic wave: |
This subclass is indented under subclass 415. Subject matter wherein the physically deforming force is
in the form of a traveling vibration made up of sound energy.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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417 | .. Strain sensors: |
This subclass is indented under subclass 415. Subject matter wherein the physically deforming force is
that of an applied stress.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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418 | ... With means to concentrate stress: |
This subclass is indented under subclass 417. Subject matter wherein the active solid-state device has means to concentrate the physically deforming stress. | |
419 | .... With thinned central active portion of semiconductor surrounded by thick insensitive portion (e.g. diaphragm type strain gauge): |
This subclass is indented under subclass 418. Subject matter wherein the means to concentrate the physically deforming stress is a thinned central active portion of semiconductor surrounded by a thick insensitive portion (e.g., a diaphragm type strain gauge). | |
420 | .. Means to reduce sensitivity to physical deformation: |
This subclass is indented under subclass 415. Subject matter wherein the device contains means to reduce the change in electrical output signal in response to physical deformation of the active junction. | |
421 | . Magnetic field: |
This subclass is indented under subclass 414. Subject matter wherein the non-electrical signal to which
the active solid-state device responds, is a magnetic field.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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422 | .. With magnetic field directing means (e.g., shield, pole piece, etc.): |
This subclass is indented under subclass 421. Subject matter wherein means is provided for directing a magnetic field to the active solid-state device. | |
423 | .. Bipolar transistor magnetic field sensor (e.g., lateral bipolar transistor): |
This subclass is indented under subclass 421. Subject matter wherein the active solid-state device includes a bipolar transistor as the magnetic field sensor. | |
424 | .. Sensor with region of high carrier recombination (e.g., magnetodiode with carriers deflected to recombination region by magnetic field): |
This subclass is indented under subclass 421. Subject matter wherein the device has a region of high carrier recombination, e.g., a magnetodiode with carriers deflected to the recombination region by the magnetic field. | |
425 | .. Magnetic field detector using compound semiconductor material (e.g., GaAs, InSb, etc.): |
This subclass is indented under subclass 421. Subject matter wherein the device is made of a compound semiconductor material (e.g., GaAs, InSb, etc.). | |
426 | .. Differential output (e.g., with offset adjustment means or with means to reduce temperature sensitivity): |
This subclass is indented under subclass 421. Subject matter wherein the device has two output terminals and the electrical signal generated by the active solid-state device is the electrical signal difference between the outputs. | |
427 | .. Magnetic field sensor in integrated circuit (e.g., in bipolar transistor integrated circuit): |
This subclass is indented under subclass 421. Subject matter wherein the device is located in an integrated circuit (i.e., a solid monolithic semiconductor chip). | |
428 | . Electromagnetic or particle radiation: |
This subclass is indented under subclass 414. Subject matter wherein the electrical signal is generated by the device in response to radiant energy in the electromagnetic energy spectrum or in the form of neutral or charged particles (e.g., alpha or beta particles). | |
429 | .. Charged or elementary particles: |
This subclass is indented under subclass 428. Subject matter wherein the particle energy is in the form of electrically charged or elementary particles (e.g., alpha or beta particles). | |
430 | ... With active region having effective impurity concentration less than 1012 atoms/cm3: |
This subclass is indented under subclass 429. Subject matter wherein the active region of the device has an effective impurity ion dopant concentration less than 1012 atoms/cm3. | |
431 | .. Light: |
This subclass is indented under subclass 428. Subject matter wherein the non-electrical signal to which
the device responds is electromagnetic energy in the light frequency/wavelength range
(i.e., from infrared (except where the response is mainly due to
thermal heating due to the infrared radiation) to visible and ultraviolet).
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
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432 | ... With optical element: |
This subclass is indented under subclass 431. Subject matter wherein the light incident upon the active region passes through an optical element (e.g., a fiber, lens, filter, etc.). | |
433 | ... With housing or encapsulation: |
This subclass is indented under subclass 431. Subject matter wherein means is provided to physically protect the device in the form of a housing or medium which embeds the device. | |
434 | .... With window means: |
This subclass is indented under subclass 433. Subject matter with means to optically couple the light to the device through a transparent window. | |
435 | ... With optical shield or mask means: |
This subclass is indented under subclass 431. Subject matter with means to spatially or temporally block all or part of the light incident on the portions of the device receptor region, other than the intended region. | |
436 | ... With means for increasing light absorption (e.g., redirection of unabsorbed light): |
This subclass is indented under subclass 431. Subject matter with means for increasing the amount of light absorbed by the device (e.g., antireflection coatings applied to the device, doping with energy converters, providing reflectors to redirect initially unabsorbed light onto the receptor, etc.). | |
437 | .... Antireflection coating: |
This subclass is indented under subclass 436. Subject matter wherein the means for increasing light absorption by the junction is a coating applied to the device which reduces reflection of the incident light (e.g., by use of interference films). | |
438 | ... Avalanche junction: |
This subclass is indented under subclass 431. Subject matter wherein the device has a junction which is
operated in the avalanche portion of its operating curve to utilize
the avalanche multiplication of photocurrent by means of hole-electron
pairs created by absorbed photons.
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439 | ... Containing dopant adapted for photoionization: |
This subclass is indented under subclass 431. Subject matter wherein the junction region is provided with impurity dopant atoms which are only ionized to produce free carriers by the incident light. | |
440 | ... With different sensor portions responsive to different wavelengths (e.g., color imager): |
This subclass is indented under subclass 431. Subject matter wherein the device has different portions, some of which respond to different wavelengths of light than do others. | |
441 | ... Narrow band gap semiconductor (<<1eV) (e.g., PbSnTe): |
This subclass is indented under subclass 431. Subject matter wherein the device contains a semiconductor material which has a gap between its conduction and valence bands which is less than one electron volt. | |
442 | .... II-VI compound semiconductor (e.g., HgCdTe): |
This subclass is indented under subclass 441. Subject matter wherein the narrow band gap semiconductor is a compound semiconductor taken from columns II and VI of the periodic table. | |
443 | ... Matrix or array (e.g., single line arrays): |
This subclass is indented under subclass 431. Subject matter wherein the device is in the form of regularly spaced individual light responsive elements. | |
444 | .... Light sensor elements overlie active switching elements in integrated circuit (e.g., where the sensor elements are deposited on an integrated circuit): |
This subclass is indented under subclass 443. Subject matter wherein the active switching elements are in a monolithic chip which is combined with an array of light responsive elements which overlie the former. | |
445 | .... With antiblooming means: |
This subclass is indented under subclass 443. Subject matter with means to prevent more than one individual
light responsive element from being activated by a very bright spot
of light incident on a point of the matrix or array.
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446 | .... With specific isolation means in integrated circuit: |
This subclass is indented under subclass 443. Subject matter wherein the matrix or array of devices is provided with means to electrically isolate the device from other devices and the overall device is contained in a monolithic semiconductor chip. | |
447 | .... With backside illumination (e.g., having a thinned central area or a non-absorbing substrate): |
This subclass is indented under subclass 443. Subject matter wherein the matrix or array device is structured to permit incident light to reach the receptor region from the backside of the device. | |
448 | .... With particular electrode configuration: |
This subclass is indented under subclass 443. Subject matter wherein the matrix or array device has a particular electrode arrangement. | |
449 | ... Schottky barrier (e.g., a transparent Schottky metallic layer or a Schottky barrier containing at least one of indium or tin (e.g., SnO2, indium tin oxide)): |
This subclass is indented under subclass 431. Subject matter wherein the device has a rectifying junction
which is formed between a metal and a semiconductor material (i.e.,
a Schottky barrier).
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450 | .... With doping profile to adjust barrier height: |
This subclass is indented under subclass 449. Subject matter wherein the height of the Schottky barrier is changed by varying the concentration of the impurity dopant in the semiconductor portion of the active junction region of the device. | |
451 | .... Responsive to light having lower energy (i.e., longer wavelength) than forbidden band gap energy of semiconductor (e.g., by excitation of carriers from metal into semiconductor): |
This subclass is indented under subclass 449. Subject matter wherein the device responds to light having
lower energy than the energy difference between the bottom of the
conduction band and the top of the valance band of the semiconductor
material that forms a junction with the metal.
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452 | .... With edge protection, e.g., doped guard ring or mesa structure: |
This subclass is indented under subclass 449. Subject matter wherein means is provided to reduce electric field concentration or breakdown at edges of the metal and semiconductor. | |
453 | .... With specified Schottky metallic layer: |
This subclass is indented under subclass 449. Subject matter wherein the device includes a layer of metal which has a specified chemical composition. | |
454 | ..... Schottky metallic layer is a silicide: |
This subclass is indented under subclass 453. Subject matter wherein the specified Schottky material layer is a compound of metal and silicon. | |
455 | ...... Silicide of Platinum group metal: |
This subclass is indented under subclass 454. Subject matter wherein the Schottky layer is a silicide of a metal found in the period table listed as a platinum group metal (i.e., ruthenium, rhodium, palladium, osmium, iridium, and platinum). | |
456 | ...... Silicide of refractory metal: |
This subclass is indented under subclass 454. Subject matter wherein the Schottky layer comprises a silicide of the refractory metals (i.e., W, Ti, Ta, Hf, Zr, V, Nb, Mo, and Cr). | |
457 | .... With particular contact geometry (e.g., ring or grid): |
This subclass is indented under subclass 449. Subject matter wherein the device has a specific geometrical arrangement of electrical contacts. | |
458 | ... PIN detector, including combinations with non-light responsive active devices: |
This subclass is indented under subclass 431. Subject matter wherein the device has a pn junction with an intrinsic semiconductor material region (i.e., one with no deliberate impurity dopants) portion between the p- and n-impurity doped regions. | |
459 | ... With particular contact geometry (e.g., ring or grid, or bonding pad arrangement): |
This subclass is indented under subclass 431. Subject matter wherein the device has a specified electrical contact geometry. | |
460 | ... With backside illumination (e.g., with a thinned central area or non-absorbing substrate): |
This subclass is indented under subclass 431. Subject matter wherein the device is structured to permit incident light to reach the receptor portion from the backside of the device. | |
461 | ... Light responsive pn junction: |
This subclass is indented under subclass 431. Subject matter wherein the device has a junction between p-type and n-type material which responds to light incident upon it by generating a signal proportional thereto. | |
462 | .... Phototransistor: |
This subclass is indented under subclass 461. Subject matter wherein the pn junction device is a transistor wherein the device generates an electrical signal in response to light incident on the transistor. | |
463 | .... With particular doping concentration: |
This subclass is indented under subclass 461. Subject matter wherein the pn junction has a particular impurity dopant concentration or spatial distribution. | |
464 | .... With particular layer thickness (e.g., layer less than light absorption depth): |
This subclass is indented under subclass 461. Subject matter wherein the thickness of the junction region is of a specified thickness (e.g., less than the thickness in which light is absorbed). | |
465 | .... Geometric configuration of junction (e.g., fingers): |
This subclass is indented under subclass 461. Subject matter wherein the junction has a specified geometrical configuration (e.g., finger shaped). | |
466 | ... External physical configuration of semiconductor (e.g., mesas, grooves): |
This subclass is indented under subclass 431. Subject matter wherein the device has a specified external configuration (e.g., with mesas). | |
467 | . Temperature: |
This subclass is indented under subclass 414. Subject matter wherein the non-electrical signal to which
the device responds is thermal energy.
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468 | .. Semiconductor device operated at cryogenic temperature: |
This subclass is indented under subclass 467. Subject matter wherein means are provided to cool the device for operation at cryogenic levels (e.g., below 100 degrees Kelvin). | |
469 | .. With means to reduce temperature sensitivity (e.g., reduction of temperature sensitivity of junction breakdown voltage by using a compensating element): |
This subclass is indented under subclass 467. Subject matter wherein means are provided to reduce the sensitivity of the electrical output of the device to changes in temperature of the device. | |
470 | .. Pn junction adapted as temperature sensor: |
This subclass is indented under subclass 467. Subject matter wherein the active junction is a pn junction (i.e., forms a boundary between p-type and n-type carrier materials) and generates an electrical signal in response to thermal energy incident upon the active junction. | |
471 | SCHOTTKY BARRIER: |
This subclass is indented under the class definition. Subject matter wherein the device contains a Schottky barrier
(i.e., a rectifying interface between a semiconductor material and
a metal).
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472 | . To compound semiconductor: |
This subclass is indented under subclass 471. Subject matter wherein the Schottky metal is interfaced with a compound semiconductor. | |
473 | .. With specified Schottky metal: |
This subclass is indented under subclass 472. Subject matter wherein the Schottky metal interfaced with the compound semiconductor is specifically claimed. | |
474 | . As active junction in bipolar transistor (e.g., Schottky collector): |
This subclass is indented under subclass 471. Subject matter wherein the Schottky barrier junction is used as an active bipolar transistor junction (e.g., a Schottky collector). | |
475 | . With doping profile to adjust barrier height: |
This subclass is indented under subclass 471. Subject matter wherein the difference in electrical potential from one side of an active junction to the other has been adjusted by a distribution of impurity dopant in the semiconductor adjacent the Schottky junction. | |
476 | . In integrated structure: |
This subclass is indented under subclass 471. Subject matter wherein the Schottky barrier device is located in a single monolithic integrated semiconductor chip. | |
477 | .. With bipolar transistor: |
This subclass is indented under subclass 476. Subject matter wherein the Schottky barrier device is located in a single integrated monolithic semiconductor chip with a bipolar transistor. | |
478 | ... Plural Schottky barriers with different barrier heights: |
This subclass is indented under subclass 477. Subject matter wherein the integrated circuit containing a Schottky barrier device contains more than one Schottky barrier with different potential differences existing across the different barriers. | |
479 | ... Connected across base-collector junction of transistor (e.g., Baker clamp): |
This subclass is indented under subclass 477. Subject matter wherein a Schottky barrier device is electrically connected across the base-collector junction of a bipolar transistor. | |
480 | . In voltage variable capacitance diode: |
This subclass is indented under subclass 471. Subject matter wherein the Schottky barrier is used in a variable capacitance diode (e.g., "varactor"). | |
481 | . Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts): |
This subclass is indented under subclass 471. Subject matter wherein the Schottky barrier is in a device
designed to operate in avalanche breakdown.
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482 | .. Microwave transit time device (e.g., IMPATT diode): |
This subclass is indented under subclass 481. Subject matter wherein the avalanche breakdown provides a power oscillation in the microwave region. | |
483 | . With means to prevent edge breakdown: |
This subclass is indented under subclass 471. Subject matter wherein the Schottky barrier device has means which help to reduce the electrical field around the edge of the device. | |
484 | .. Guard ring: |
This subclass is indented under subclass 483. Subject matter wherein the means to prevent edge breakdown is a guard ring (e.g., a pn junction surrounding the periphery of the Schottky metal). | |
485 | . Specified materials: |
This subclass is indented under subclass 471. Subject matter wherein the Schottky barrier device uses a material of specified composition. | |
486 | .. Layered (e.g., a diffusion barrier material layer or a silicide layer or a precious metal layer): |
This subclass is indented under subclass 485. Subject matter wherein the material, e.g., metal, which forms the Schottky barrier is comprised of layers, for example, a diffusion barrier material layer or a silicide layer or a precious metal layer. | |
487 | WITH MEANS TO INCREASE BREAKDOWN VOLTAGE THRESHOLD: |
This subclass is indented under the class definition. Subject matter wherein the device is provided with means to increase the voltage that may be applied thereto without causing electrical breakdown. | |
488 | . Field relief electrode: |
This subclass is indented under subclass 487. Subject matter wherein the means to increase breakdown voltage comprises an electrode insulated from the semiconductor material of the active solid-state device, and configured so as to reduce the electric field strength at a given voltage applied to the device. | |
489 | .. Resistive: |
This subclass is indented under subclass 488. Subject matter wherein the field relief electrode is a high resistance layer adapted to have a current flow therethrough and a corresponding voltage variation therein. | |
490 | .. Combined with floating pn junction guard region: |
This subclass is indented under subclass 488. Subject matter wherein the means for increasing breakdown voltage includes, in addition to a field relief electrode, a floating pn junction guard region, i.e., a region free of direct electrical connection located in the material forming one side of an active pn, or other rectifying semiconductor junction, which region forms a pn junction with the material of the one side of the active junction, the guard region being spaced from the active junction, but sufficiently close thereto that the reverse bias depletion region from the active junction can reach the guard junction, whereby the guard junction modifies the shape of the depletion region from the active junction thus lowering the electric field intensity at a given applied reverse voltage across the active junction. | |
491 | . In integrated circuit: |
This subclass is indented under subclass 487. Subject matter wherein the device with means to increase
breakdown voltage is combined in a unitary monolithic semiconductor
chip with other active or passive electronic devices.
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492 | .. With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., RESURF devices): |
This subclass is indented under subclass 491. Subject matter wherein the means to increase breakdown voltage
of the device includes a layer of semiconductor material having
a sufficiently low doping concentration that it may be fully depleted
by the depletion region of a reverse biased junction of the active
device prior to avalanche breakdown of the active device, so that
upon depletion of the layer of semiconductor material, the effective
width of the depletion layer of the reverse biased junction of the
active device is greatly expanded, thus resulting in smaller increases
in electric field intensity with further increases of reverse voltage.
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493 | . With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., RESURF devices): |
This subclass is indented under subclass 487. Subject matter wherein the means to increase breakdown voltage of the device includes a layer of semiconductor material having a sufficiently low doping concentration that it may be fully depleted by the depletion region of a reverse biased junction of the active device prior to avalanche breakdown of the active device, so that upon depletion of the layer of semiconductor material, the effective width of the depletion layer of the reverse biased junction of the active device is greatly expanded, thus resulting in smaller increases in electric field intensity with further increases of reverse voltage. | |
494 | . Reverse-biased pn junction guard region: |
This subclass is indented under subclass 487. Subject matter wherein the means for increasing breakdown voltage in the device includes a reverse biased pn junction guard region, that is, a region located in the material forming one side of an active pn or other rectifying semiconductor junction, which region forms a pn junction with the material of the one side of the active junction, the guard region being adapted to be reverse biased with respect to the material forming one side of the active junction, and being spaced from the active junction, but sufficiently close thereto that the reverse bias depletion region from the active junction can reach the depletion region from the reverse biased guard junction, whereby the depletion region of the guard junction modifies the shape of the depletion region from the active junction thus lowering the electric field intensity at a given applied reverse voltage across the active junction. | |
495 | . Floating pn junction guard region: |
This subclass is indented under subclass 487. Subject matter wherein the means for increasing breakdown voltage in the device includes a floating pn junction guard region, that is, a region, free of direct electrical connection, located in the material forming one side of an active pn or other rectifying semiconductor junction, which region forms a pn junction with the material of the one side of the active junction, the guard region being spaced from the active junction, but sufficiently close thereto that the reverse bias depletion region from the active junction can reach the guard junction, whereby the guard junction modifies the shape of the depletion region from the active junction thus lowering the electric field intensity at a given applied reverse voltage across the active junction. | |
496 | . With physical configuration of semiconductor surface to reduce electric field (e.g., reverse bevels, double bevels, stepped mesas, etc.): |
This subclass is indented under subclass 487. Subject matter wherein the means to increase breakdown voltage includes a semiconductor surface portion having a physical configuration, such as a bevel or mesa, to reduce electric field strength at a given applied voltage. Typically, the physical configuration will be such that the depletion region from a reverse biased junction in the active device reaches the physically configured surface and is forced by the shape of the surface to spread wider at a given applied reverse voltage than it would otherwise, thus reducing the electric field strength in the depletion layer. | |
497 | PUNCHTHROUGH STRUCTURE DEVICE (E.G., PUNCHTHROUGH TRANSISTOR, CAMEL BARRIER DIODE): |
This subclass is indented under the class definition. Subject matter having at least one active pn, Schottky barrier,
or other rectifying junction which can be reverse biased to produce
a depletion layer, the active junction being spaced from a second
junction by a layer of semiconductor material in which the depletion region
extending from the active junction is produced, the second junction
being one capable of supplying minority carriers to the layer of
semiconductor material upon forward bias of the second junction,
and in which the second junction is located sufficiently close to
the active junction that the depletion region from the active junction
can reach the second junction, thereby forward biasing the second
junction and causing the injection of minority carriers therefrom
which traverse the depletion layer and reach the active junction.
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498 | . Punchthrough region fully depleted at zero external applied bias voltage (e.g., camel barrier or planar doped barrier devices, or so-called "Bipolar SIT" devices): |
This subclass is indented under subclass 497. Subject matter wherein the active junction and the second junction are sufficiently closely spaced that the depletion region from the active junction due to the built-in potential of the active junction reaches the second junction even in the absence of a reverse bias voltage across the active junction. | |
499 | INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS: |
This subclass is indented under the class definition. Subject matter wherein at least one active solid-state device
is provided in a single, monolithic semiconductor chip along with other
active or passive elements in the chip, and means are provided to
electrically isolate different devices in the monolithic chip from each
other.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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500 | . Including high voltage or high power devices isolated from low voltage or low power devices in the same integrated circuit: |
This subclass is indented under subclass 499. Subject matter wherein the monolithic chip includes both
electronic components specifically configured for operation at high
voltages or high power levels, along with other electronic components
which are configured for operation only at low voltages or power
levels.
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501 | .. Including dielectric isolation means: |
This subclass is indented under subclass 500. Subject matter wherein the means to electrically isolate different devices in the same monolithic chip, containing both high voltage or power and low voltage or power devices, from each other includes a region of electrical insulator material. | |
502 | .. High power or high voltage device extends completely through semiconductor substrate (e.g., backside collector contact): |
This subclass is indented under subclass 500. Subject matter wherein at least one high voltage or high power device extends completely through the monolithic chip from the top surface to the bottom surface of the chip. | |
503 | . With contact or metallization configuration to reduce parasitic coupling (e.g., separate ground pads for different parts of integrated circuit): |
This subclass is indented under subclass 499. Subject matter wherein the chip includes contacts or electrical
interconnections, such as metal strips deposited on the surface
of the chip, which contacts or interconnections are configured in
such a manner as to reduce or eliminate unwanted parasitic coupling
of electrical signals from one part or component of the integrated
circuit to another.
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504 | . Including means for establishing a depletion region throughout a semiconductor layer for isolating devices in different portions of the layer (e.g., "JFET" isolation): |
This subclass is indented under subclass 499. Subject matter wherein means are provided for producing a region in a layer which is fully depleted of charge carriers and thereby non-conductive as part of the means for electrically isolating different devices in the chip from each other. | |
505 | . With polycrystalline semiconductor isolation region in direct contact with single crystal active semiconductor material: |
This subclass is indented under subclass 499. Subject matter wherein the means for electrically isolating
different devices in the chip from each other includes at least
one region of polycrystalline (i.e., made up of many small crystals)
semiconductor material, which polycrystalline isolation region is
in direct contact with at least one region of single crystal semiconductor
material which forms part of an active solid-state device in the
chip.
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506 | . Including dielectric isolation means: |
This subclass is indented under subclass 499. Subject matter wherein the means to electrically isolate different devices in the same monolithic chip from each other includes a region of electrical insulator material. | |
507 | .. With single crystal insulating substrate (e.g., sapphire): |
This subclass is indented under subclass 506. Subject matter wherein the means to electrically isolate
different devices from each other includes a substrate of single
crystal insulating material, upon which the semiconductor material
of the active devices is grown in heteroepitaxial relationship therewith.
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508 | .. With metallic conductor within isolating dielectric or between semiconductor and isolating dielectric (e.g., metal shield layer or internal connection layer): |
This subclass is indented under subclass 506. Subject matter wherein a metallic (metal or metal-like)
conductor is located within the region of electrical insulator material
which isolates the components on the chip from each other or is
provided between the single crystal semiconductor material of the
semiconductor components and the electrical insulator material forming
the dielectric isolation.
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509 | .. Combined with pn junction isolation (e.g., isoplanar, LOCOS): |
This subclass is indented under subclass 506. Subject matter wherein the means for electrically isolating
components in the chip from each other includes, in addition to
portions of electrical insulator material, pn junctions separating
regions of active devices from each other and/or from a
supporting semiconductor substrate.
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510 | ... Dielectric in groove: |
This subclass is indented under subclass 509. Subject matter wherein the electrical insulator material
forming part of the isolation means is located in grooves in the
semiconductor surface (e.g., LOCOS)
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511 | .... With complementary (npn and pnp) bipolar transistor structures: |
This subclass is indented under subclass 509. Subject matter wherein the device includes, on the same monolithic chip, both pnp bipolar transistors and npn bipolar transistor structures. | |
512 | ..... Complementary devices share common active region (e.g., integrated injection logic, I2L): |
This subclass is indented under subclass 511. Subject matter wherein the device includes structures wherein
a pnp transistor shares a semiconductor region with an npn transistor, e.g.,
where the base region of the pnp transistor serves also as the emitter
of the npn transistor and the collector of the pnp transistor serves
as the base region of the npn transistor.
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513 | .... Vertical walled groove: |
This subclass is indented under subclass 510. Subject matter wherein the dielectric isolation is located in grooves in the surface of the overall device which extend perpendicular to the surface of the overall device. | |
514 | ..... With active junction abutting groove (e.g., "walled emitter"): |
This subclass is indented under subclass 513. Subject matter wherein at least one pn junction forming
a part of an active solid-state device terminates against the dielectric
filling in the vertical walled isolation groove.
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515 | .... With active junction abutting groove (e.g., "walled emitter"): |
This subclass is indented under subclass 510. Subject matter wherein at least one pn junction forming a part of an active solid-state device terminates against the dielectric filling in the isolation groove. | |
516 | .... With passive component (e.g., resistor, capacitor, etc.): |
This subclass is indented under subclass 510. Subject matter wherein the device contains, in addition to at least one active solid-state device, at least one passive component, such as a resistor or capacitor. | |
517 | .... With bipolar transistor structure: |
This subclass is indented under subclass 510. Subject matter wherein the device contains at least one bipolar transistor structure. | |
518 | ..... With polycrystalline connecting region (e.g., polysilicon base contact): |
This subclass is indented under subclass 517. Subject matter wherein the device has portions of polycrystalline (i.e., made up of many small crystals) semiconductor material serving as electrical contacts or connections. | |
519 | .... Including heavily doped channel stop region adjacent groove: |
This subclass is indented under subclass 510. Subject matter wherein the device has at least one heavily doped semiconductor region adjacent a dielectric filled groove to prevent formation of parasitic inversion channels in the semiconductor material. | |
520 | .... Conductive filling in dielectric-lined groove (e.g., polysilicon backfill): |
This subclass is indented under subclass 510. Subject matter wherein the device has the grooves filled with a lining of dielectric material together with a conductive filling in the groove, the conductive filling being separated from the semiconductor material by the dielectric lining of the groove. | |
521 | .... Sides of grooves along major crystal planes (e.g., (111), (100) planes, etc.): |
This subclass is indented under subclass 510. Subject matter wherein the device has grooves for the isolation
whose sides are oriented along one or more major crystal planes
of the semiconductor material in which the grooves are formed.
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522 | .. Air isolation (e.g., beam lead supported semiconductor islands): |
This subclass is indented under subclass 506. Subject matter wherein the isolation means is air (e.g.,
islands of semiconductor material supported by beam leads and separated
by air).
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523 | .. Isolation by region of intrinsic (undoped) semiconductor material (e.g., including region physically damaged by proton bombardment): |
This subclass is indented under subclass 506. Subject matter wherein the electrical insulator material
which provides the dielectric isolation includes a region of intrinsic
(undoped) semiconductor material, with resulting high resistivity.
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524 | .. Full dielectric isolation with polycrystalline semiconductor substrate: |
This subclass is indented under subclass 506. Subject matter wherein the integrated circuit substrate is made of polycrystalline semiconductor material and the isolation means is a dielectric material which surrounds each active solid-state semiconductor device, resulting is those devices becoming islands in a sea of dielectric material. | |
525 | ... With complementary (npn and pnp) bipolar transistor structures: |
This subclass is indented under subclass 524. Subject matter wherein the device includes complementary
bipolar transistors (i.e., includes both pnp and npn bipolar transistors).
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526 | .. With bipolar transistor structure: |
This subclass is indented under subclass 524. Subject matter wherein the device includes at least one bipolar transistor structure. | |
527 | ... Sides of isolated semiconductor islands along major crystal planes (e.g., (111), (100) planes, etc.): |
This subclass is indented under subclass 524. Subject matter wherein the device has sides of the isolated single crystal semiconductor islands which are oriented along one or more major crystal planes of the semiconductor material of the islands. | |
528 | . Passive components in ICs: |
This subclass is indented under subclass 499. Subject matter wherein the device is contained in a single,
monolithic chip with electrical components which are passive, i.e.,
which do not have gain, for example, pure capacitors, inductors,
or resistors.
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529 | .. Including programmable passive component (e.g., fuse): |
This subclass is indented under subclass 528. Subject matter wherein a passive component is programmable,
i.e., may be permanently altered (e.g., a fuse - a protective device designed
to open a circuit in response to an excessive current).
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530 | ... Anti-fuse: |
This subclass is indented under subclass 529. Subject matter wherein an element which is normally non-conductive is made conductive (e.g., a capacitor) that is, that can be selectively electrically shorted. | |
531 | .. Including inductive element: |
This subclass is indented under subclass 528. Subject matter wherein the device includes an electrical inductor, i.e., an element that tends to oppose any change of current applied thereto because of a magnetic field generated by the inductor itself. | |
532 | .. Including capacitor component: |
This subclass is indented under subclass 528. Subject matter wherein the device includes an electrical capacitor, i.e., a passive element with electrical conductors separated by a dielectric material which stores electrical charge when potential differences exist between the conductive elements of the capacitor. | |
533 | ... Combined with resistor to form RC filter structure: |
This subclass is indented under subclass 532. Subject matter wherein the capacitor element is combined with an electrical resistance element to form an electrical filter in the form of an integrated RC filter circuit. | |
534 | ... With means to increase surface area (e.g., grooves, ridges, etc.): |
This subclass is indented under subclass 532. Subject matter wherein the device includes means to increase the surface area of the device by, for example, grooves or ridges in the surface of the device. | |
535 | ... Both terminals of capacitor isolated from substrate: |
This subclass is indented under subclass 532. Subject matter wherein the device includes a capacitor, both terminals of which are electrically isolated from the integrated circuit chip substrate. | |
536 | .. Including resistive element: |
This subclass is indented under subclass 528. Subject matter wherein the device includes an electrical resistance element. | |
537 | ... Using specific resistive material: |
This subclass is indented under subclass 536. Subject matter wherein the passive resistive element is a specific chemical element, compound, or composition. | |
538 | .... Polycrystalline silicon (doped or undoped): |
This subclass is indented under subclass 537. Subject matter wherein the specific resistive material is a silicon material made up of many single crystals having a random orientation. | |
539 | ... Combined with bipolar transistor: |
This subclass is indented under subclass 536. Subject matter wherein the device includes at least one bipolar transistor structure along with the resistive element. | |
540 | .... With compensation for non-linearity (e.g., dynamic isolation pocket bias): |
This subclass is indented under subclass 539. Subject matter wherein means are provided to compensate for non-linearity of the resistor, such as by provision of varying bias voltage to a semiconductor pocket which forms a pn junction with the resistive element and provides electrical isolation therefor. | |
541 | .... Pinch resistor: |
This subclass is indented under subclass 539. Subject matter wherein the resistor element has a structure
in the form of a layer of one conductivity type sandwiched between
a pair of regions of opposite conductivity type, so that the upper
region of opposite conductivity type restricts the thickness of
the resistive layer and thus increases its resistivity.
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542 | .... Resistor has same doping as emitter or collector of bipolar transistor: |
This subclass is indented under subclass 539. Subject matter wherein the resistor region has the same
doping concentration and profile (e.g., is formed in the same step
as) either the emitter or the collector region of the bipolar transistor
with which the resistor is combined in the same integrated circuit.
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543 | .... Lightly doped junction isolated resistor (e.g., ion implanted resistor): |
This subclass is indented under subclass 539. Subject matter wherein the resistive element is of the form
of a lightly doped layer of one conductivity type located in a region
of opposite conductivity type, such that the pn junction between
the resistor region and its containing opposite conductivity type
region serves to isolate the resistor.
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544 | . With pn junction isolation: |
This subclass is indented under subclass 499. Subject matter wherein the means for electrically isolating different devices from each other includes a pn junction located between the devices to be isolated. | |
545 | .. With means to control isolation junction capacitance (e.g., lightly doped layer at isolation junction to increase depletion layer width): |
This subclass is indented under subclass 544. Subject matter wherein the device is provided with means, such as a lightly doped semiconductor layer at the isolation junction, to control (e.g., increase or decrease) the capacitance of the isolation junction. | |
546 | .. With structural means to protect against excess or reversed polarity voltage: |
This subclass is indented under subclass 544. Subject matter wherein means is provided to protect the circuit or its components from application of an excessive or reversed polarity voltage. | |
547 | .. With structural means to control parasitic transistor action or leakage current: |
This subclass is indented under subclass 544. Subject matter including means to control or reduce parasitic bipolar transistor action, i.e., bipolar transistor action in which the substrate and isolation junctions of the integrated circuit act as active junctions of an unintended bipolar transistor, or to control or reduce leakage currents associated with the pn isolation junctions. | |
548 | .. At least three regions of alternating conductivity types with dopant concentration gradients decreasing from surface of semiconductor (e.g., "triple-diffused" integrated circuit): |
This subclass is indented under subclass 544. Subject matter including at least three regions of alternating
conductivity type (p or n), with each successive region contained
within the previous region, and each of the regions having a doping
concentration which decreases with distance from the same external
surface of the semiconductor body.
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549 | .. With substrate and lightly doped surface layer of same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit): |
This subclass is indented under subclass 544. Subject matter wherein the junction isolation is formed in an integrated circuit with a substrate and lightly doped surface layer of the same conductivity type, separated by subsurface heavily doped region of opposite conductivity type (e.g., "collector diffused isolation" integrated circuit). | |
550 | .. With lightly doped surface layer of one conductivity type on substrate of opposite conductivity type, having plural heavily doped portions of the one conductivity type between the layer and substrate, different ones of the heavily doped portions having differing depths or physical extent: |
This subclass is indented under subclass 544. Subject matter wherein the junction isolation is formed
in an integrated circuit with a lightly doped surface layer of one
conductivity type on substrate of opposite conductivity type, having plural
heavily doped portions of the one conductivity type between the
layer and substrate, different ones of the heavily doped portions having
differing depths or physical extent.
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551 | .. Including voltage reference element (e.g., avalanche diode, so-called "Zener diode" with breakdown voltage greater than 6 volts or with positive temperature coefficient of breakdown voltage): |
This subclass is indented under subclass 544. Subject matter including a voltage reference element, i.e.,
a device which limits the operating voltage of one or more active
devices in the integrated circuit (e.g., an avalanche diode, so-called "Zener
diode" with breakdown voltage greater than 6 volts, or
with positive temperature coefficient of breakdown voltage).
SEE OR SEARCH THIS CLASS, SUBCLASS:
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552 | .. With bipolar transistor structure: |
This subclass is indented under subclass 544. Subject matter wherein the junction isolation is formed in an integrated circuit between active devices at least one of which has a bipolar transistor structure. | |
553 | ... Transistors of same conductivity type (e.g., npn) having different current gain or different operating voltage characteristics: |
This subclass is indented under subclass 552. Subject matter wherein plural bipolar transistor structures are present which have the same electrical conductivity type (e.g., npn) but have different current gain or different operating voltage characteristics. | |
554 | ... With connecting region made of polycrystalline semiconductor material (e.g., polysilicon base contact): |
This subclass is indented under subclass 552. Subject matter wherein a connecting region or contact made of a polycrystalline semiconductor material is present in the bipolar integrated circuit. | |
555 | ... Complementary bipolar transistor structures (e.g., integrated injection logic, I2L): |
This subclass is indented under subclass 552. Subject matter wherein the device contains complementary bipolar transistor structures (i.e., both pnp and npn bipolar transistor structures). | |
556 | .... Including lateral bipolar transistor structure: |
This subclass is indented under subclass 555. Subject matter wherein at least one of the pnp or npn complementary bipolar transistors is a lateral structure (i.e., has current flow between its emitter and collector parallel to a major surface of the semiconductor chip). | |
557 | . Lateral bipolar transistor structure: |
This subclass is indented under subclass 499. Subject matter wherein the device includes at least one bipolar transistor which has a lateral structure (i.e., has current flow between its emitter and collector parallel to a major surface of the semiconductor chip). | |
558 | .. With base region doping concentration step or gradient or with means to increase current gain: |
This subclass is indented under subclass 557. Subject matter wherein the device has a base region with a variable impurity dopant concentration across it, or wherein means are provided to increase the current gain of the transistor. | |
559 | .. With active region formed along groove or exposed edge in semiconductor: |
This subclass is indented under subclass 557. Subject matter wherein the device has a groove or exposed edge and an active region of the bipolar transistor is formed along the groove or exposed edge. | |
560 | .. With multiple collectors or emitters: |
This subclass is indented under subclass 557. Subject matter wherein the device has more than one collector region or more than one emitter region. | |
561 | ... With different emitter to collector spacings or facing areas: |
This subclass is indented under subclass 560. Subject matter wherein the device has different emitter to collector spacings for different collectors or emitters. | |
562 | ... With auxiliary collector/re-emitter between emitter and output collector (e.g., "Current Hogging Logic" device): |
This subclass is indented under subclass 560. Subject matter wherein the device has a region located between its emitter and its collector which serves as an auxiliary collector/re-emitter, i.e., the auxiliary region collects carriers emitted by the emitter and re-emits them to the collector (e.g., a "Current Hogging Logic" device). | |
563 | . With multiple separately connected emitter, collector, or base regions in same transistor structure: |
This subclass is indented under subclass 499. Subject matter wherein the device includes two or more separately connected (i.e., not commonly connected) emitter, collector, or base regions. | |
564 | .. Multiple base or collector regions: |
This subclass is indented under subclass 563. Subject matter wherein the device contains two or more separately connected base or collector regions, but not more than one separately connected emitter region. | |
565 | BIPOLAR TRANSISTOR STRUCTURE: |
This subclass is indented under the class definition. Subject matter wherein the active solid-state device comprises
at least one bipolar transistor.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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566 | . Plural non-isolated transistor structures in same structure: |
This subclass is indented under subclass 565. Subject matter wherein the bipolar structure includes more
than one bipolar transistor in a structure without electrical isolation
between transistors.
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567 | .. Darlington configuration (i.e., emitter to collector current of input transistor supplied to base region of output transistor): |
This subclass is indented under subclass 566. Subject matter wherein the plural non-electrically isolated transistor structures are arranged in a Darlington configuration (i.e., wherein the emitter to collector current of an input transistor is supplied to the base region of an output transistor). | |
568 | ... More than two Darlington-connected transistors: |
This subclass is indented under subclass 567. Subject matter wherein the device contains more than two Darlington-connected bipolar transistors. | |
569 | ... Complementary Darlington-connected transistors: |
This subclass is indented under subclass 567. Subject matter wherein the Darlington configuration comprises two bipolar transistors which have a complementary connection, i.e., the input transistor is of one conductivity type (e.g., npn) and the other is of the opposite conductivity type (e.g., pnp). | |
570 | ... With active components in addition to Darlington transistors (e.g., antisaturation diode, bleeder diode connected antiparallel to input transistor base-emitter junction, etc.): |
This subclass is indented under subclass 567. Subject matter wherein the device contains active solid-state devices in addition to Darlington bipolar transistors. | |
571 | ... Non-planar structure (e.g., mesa emitter, or having a groove to define resistor): |
This subclass is indented under subclass 567. Subject matter wherein the device is a non-planar structure (i.e., the upper surface is not a completely flat, unbroken surface). | |
572 | ... With resistance means connected between transistor base regions: |
This subclass is indented under subclass 567. Subject matter wherein the device includes a resistor element structure connecting the base regions of the Darlington bipolar transistors. | |
573 | ... With housing or contact structure or configuration: |
This subclass is indented under subclass 567. Subject matter wherein a housing or electrical contact structure is provided for the device. | |
574 | .. Complementary transistors share common active region (e.g., integrated injection logic, I2L): |
This subclass is indented under subclass 566. Subject matter wherein the device includes complementary transistors (i.e., bipolar transistors of different conductivity types) which share a common active region (e.g., integrated injection logic, I2L). | |
575 | ... Including lateral bipolar transistor structure: |
This subclass is indented under subclass 574. Subject matter wherein at least one of the complementary
bipolar transistors sharing a common region is a lateral bipolar
transistor (i.e., has current flow between its emitter and collector
parallel to a major surface of the semiconductor chip).
SEE OR SEARCH THIS CLASS, SUBCLASS:
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576 | .... With contacts of refractory material (e.g., polysilicon, silicide of refractory or platinum group metal): |
This subclass is indented under subclass 575. Subject matter wherein the device has electrical contacts which are made of a refractory material (e.g., polysilicon, or a silicide of a metal found in groups IVA, VA, VIA or VIIIA (other than iron (Fe) nickel (Ni) or cobalt (Co)) of the periodic table of the elements. | |
577 | . Including additional component in same, non-isolated structure (e.g., transistor with diode, transistor with resistor, etc.): |
This subclass is indented under subclass 565. Subject matter wherein the device includes an additional component (e.g., a diode or a resistor) in the same non-electrically isolated structure with the bipolar transistor structure. | |
578 | . With enlarged emitter area (e.g., power device): |
This subclass is indented under subclass 565. Subject matter wherein the device has relatively enlarged emitter cross-sectional areas (e.g., power devices). | |
579 | .. With separate emitter areas connected in parallel: |
This subclass is indented under subclass 578. Subject matter wherein there are a plurality of separate emitter areas which are electrically connected in parallel. | |
580 | ... With current ballasting means (e.g., emitter ballasting resistors or base current ballasting means): |
This subclass is indented under subclass 579. Subject matter wherein current ballasting means is provided
to divide emitter current more evenly between the plurality of separate emitter
areas which are electrically interconnected in parallel.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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581 | .... Thin film ballasting means (e.g., polysilicon resistor): |
This subclass is indented under subclass 580. Subject matter wherein the ballasting means comprises thin film resistor means (e.g., a thin film polysilicon resistor). | |
582 | .. With current ballasting means (e.g., emitter ballasting resistors or base current ballasting resistors): |
This subclass is indented under subclass 578. Subject matter wherein the enlarged emitter area has a current ballasting means (e.g., emitter ballasting resistors). | |
583 | .. With means to reduce transistor action in selected portions of transistor (e.g., heavy base region doping under central web of emitter to prevent secondary breakdown): |
This subclass is indented under subclass 578. Subject matter wherein there are means in selected portions of the transistor to reduce the transistor action in those portions. | |
584 | .. With housing or contact (i.e., electrode) means: |
This subclass is indented under subclass 578. Subject matter wherein the enlarged emitter area device is provided with a housing (means to protect the device from the environment) or with electrical contact means. | |
585 | . With means to increase inverse gain: |
This subclass is indented under subclass 565. Subject matter wherein there are means associated with the transistor to increase the gain in an inverse mode of operation. | |
586 | . With non-planar semiconductor surface (e.g., groove, mesa, bevel, etc.): |
This subclass is indented under subclass 565. Subject matter wherein the device has a non-planar upper or side surface. | |
587 | . With specified electrode means: |
This subclass is indented under subclass 565. Subject matter wherein the device has specific electrode means. | |
588 | .. Including polycrystalline semiconductor as connection: |
This subclass is indented under subclass 587. Subject matter wherein the electrode means includes polysilicon semiconductor material to make an electrical connection. | |
589 | . Avalanche transistor: |
This subclass is indented under subclass 565. Subject matter wherein the device is a bipolar transistor designed to be operated with its base-collector junction biased into avalanche breakdown. | |
590 | . With means to reduce minority carrier lifetime (e.g., region of deep level dopant or region of crystal damage): |
This subclass is indented under subclass 565. Subject matter wherein the device has means to reduce the minority carrier lifetime, i.e., before recombination with a majority carrier, by, for example, a region of deep level dopant or a region of damage to the semiconductor crystal. | |
591 | . With emitter region having specified doping concentration profile (e.g., high-low concentration step): |
This subclass is indented under subclass 565. Subject matter wherein the device has an emitter region with a specified impurity dopant concentration profile (e.g., a specified concentration gradient across the emitter region). | |
592 | . With base region having specified doping concentration profile or specified configuration (e.g., inactive base more heavily doped than active base or base region has constant doping concentration portion (e.g., epitaxial base)): |
This subclass is indented under subclass 565. Subject matter wherein the device has a base region with a cross section that has a specified impurity dopant concentration across it or has a particular geometric configuration. | |
593 | . With means to increase current gain or operating frequency: |
This subclass is indented under subclass 565. Subject matter wherein the device includes means to increase the current gain or the operating frequency of the devices. | |
594 | WITH GROOVE TO DEFINE PLURAL DIODES: |
This subclass is indented under the class definition. Subject matter wherein the active solid-state device has more than one diode and has a groove therein to separate the diodes. | |
595 | VOLTAGE VARIABLE CAPACITANCE DEVICE: |
This subclass is indented under the class definition. Subject matter wherein the active solid-state device has
a capacitance which varies with the voltage applied thereto.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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596 | . With specified dopant profile: |
This subclass is indented under subclass 595. Subject matter wherein the device has a cross section which has a specified impurity dopant concentration across it. | |
597 | .. Retrograde dopant profile (e.g., dopant concentration decreases with distance from rectifying junction): |
This subclass is indented under subclass 596. Subject matter wherein the device contains a rectifying junction and wherein the variable dopant concentration decreases with distance from the rectifying junction. | |
598 | . With plural junctions whose depletion regions merge to vary voltage dependence: |
This subclass is indented under subclass 595. Subject matter wherein the device has more than one junction with depletion regions that merge to achieve a capacitance that varies with applied voltage. | |
599 | . With means to increase active junction area (e.g., grooved or convoluted surface): |
This subclass is indented under subclass 595. Subject matter wherein the device is provided with an increased active junction area (e.g., grooves or a convoluted surface to increase the active junction area). | |
600 | . With physical configuration to vary voltage dependence (e.g., mesa): |
This subclass is indented under subclass 595. Subject matter wherein the device has a physical configuration (e.g., a mesa) to vary the voltage dependency of the capacitance. | |
601 | . Plural diodes in same non-isolated structure, or device having three or more terminals: |
This subclass is indented under subclass 595. Subject matter wherein the device is comprised of more than one diode located in the same non-isolated structure, or is a device which has three or more electrical terminals. | |
602 | . With specified housing or contact: |
This subclass is indented under subclass 595. Subject matter wherein the device is provided with a specific housing (structure to protect the device from the environment) or electrical contact structure. | |
603 | AVALANCHE DIODE (E.G., SO-CALLED "ZENER" DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS): |
This subclass is indented under the class definition. Subject matter configured to operate in a manner in which
an external voltage is applied in the reverse-conducting direction
of the device junction with sufficient magnitude to cause the potential
barrier at the junction to breakdown due to electrons or holes gaining sufficient
speed to dislodge valence electrons and thus create more hole-electron
current carriers by an avalanche process.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
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604 | . Microwave transit time device (e.g., IMPATT diode): |
This subclass is indented under subclass 603. Subject matter wherein the device is structured to operate as a transit time device at microwave frequencies, the frequency at which it operates being determined by the transit time of charge carriers through the depletion region which extends on both sides of the reverse biased junction (e.g., an Impact ionization avalanche transit time (IMPATT) diode). | |
605 | . With means to limit area of breakdown (e.g., guard ring having higher breakdown voltage): |
This subclass is indented under subclass 603. Subject matter in which the avalanche diode device is provided with means to limit the area of the device in which electrical breakdown occurs (e.g., a guard ring having a higher breakdown voltage than the area it surrounds). | |
606 | .. Subsurface breakdown: |
This subclass is indented under subclass 605. Subject matter wherein the voltage breakdown occurs below the surface of the device. | |
607 | WITH SPECIFIED DOPANT (e.g., plural dopants of same conductivity in same region): |
This subclass is indented under the class definition. Subject matter wherein the active solid-state device contains
impurity dopant atoms which are specified and are used to change
the conductive properties of the semiconductor material.
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608 | . Switching device based on filling and emptying of deep energy levels: |
This subclass is indented under subclass 607. Subject matter wherein the device utilizes charge carrier filling and emptying of deep energy levels within the forbidden gap of semiconductor material of the device to produce a switching or ON/OFF action. | |
609 | . For compound semiconductor (e.g., deep level dopant): |
This subclass is indented under subclass 607. Subject matter wherein the specified dopant is in a compound semiconductor (e.g., GaAs). | |
610 | . Deep level dopant: |
This subclass is indented under subclass 607. Subject matter including a specified dopant which establishes traps in the forbidden band of a semiconductor into which carriers may drop or rise. | |
611 | .. With specified distribution (e.g., laterally localized, with specified concentration distribution or gradient): |
This subclass is indented under subclass 610. Subject matter wherein the deep level dopant has a particular, specified distribution (e.g., with a specified concentration distribution or gradient). | |
612 | .. Deep level dopant other than gold or platinum: |
This subclass is indented under subclass 610. Subject matter wherein the deep level dopant is other than gold or platinum. | |
613 | INCLUDING SEMICONDUCTOR MATERIAL OTHER THAN SILICON OR GALLIUM ARSENIDE (GaAs) (E.G., PbxSn1-xTe): |
Subject matter under the subclass definition which includes semiconducting material other than silicon or gallium arsenide (GaAs). | |
614 | . Group II-VI compound (e.g., CdTe, HgxCd1-xTe): |
This subclass is indented under subclass 613. Subject matter wherein the semiconducting material other than silicon or gallium arsenide is a compound of the periodic table group II-VI (e.g., CdTe). | |
615 | . Group III-V compound (e.g., InP): |
This subclass is indented under subclass 613. Subject matter wherein the semiconducting material other than silicon or gallium arsenide is a compound of the periodic table group III-V (e.g., InP). | |
616 | . Containing germanium, Ge: |
This subclass is indented under subclass 613. Subject matter wherein the semiconducting material other than silicon or gallium arsenide contains germanium (Ge). | |
617 | INCLUDING REGION CONTAINING CRYSTAL DAMAGE: |
This subclass is indented under the class definition. Subject matter wherein the device includes a region which
has crystal damage.
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618 | PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.): |
This subclass is indented under the class definition. Subject matter wherein the device has a particular physical
form, such as a mesa or bevel or groove.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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619 | . With thin active central semiconductor portion surrounded by thicker inactive shoulder (e.g., for mechanical support): |
This subclass is indented under subclass 618. Subject matter wherein the device has a thin active central configuration which is surrounded by a thicker inactive shoulder region (e.g., for mechanical support). | |
620 | . With peripheral feature due to separation of smaller semiconductor chip from larger wafer (e.g., scribe region, or means to prevent edge effects such as leakage current at peripheral chip separation area): |
This subclass is indented under subclass 618. Subject matter wherein the physical configuration is at
the periphery of the semiconductor chip due to the separation of
the chip from a larger wafer.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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621 | . With electrical contact in hole in semiconductor (e.g., lead extends through semiconductor body): |
This subclass is indented under subclass 618. Subject matter wherein the physical configuration is a hole in the semiconductor through which an electrical contact extends. | |
622 | . Groove: |
This subclass is indented under subclass 618. Subject matter in which there is a physical groove in a
surface of the semiconductor device.
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623 | . Mesa structure (e.g., including undercut or stepped mesa configuration or having constant slope taper): |
This subclass is indented under subclass 618. Subject matter wherein the physical configuration is that
of a mesa (e.g., there is at least one flat topped protrusion above
the rest of the surface of the semiconductor body).
SEE OR SEARCH THIS CLASS, SUBCLASS:
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624 | .. With low resistance ohmic connection means along exposed mesa edge (e.g., contact or heavily doped region along exposed mesa to reduce "skin effect" losses in microwave diode): |
This subclass is indented under subclass 623. Subject matter wherein there is a low resistance ohmic connection means along the exposed edge of the mesa. | |
625 | .. Semiconductor body including mesa is intimately bonded to thick electrical and/or thermal conductor member of larger lateral extent than semiconductor body (e.g., "plated heat sink" microwave diode): |
This subclass is indented under subclass 623. Subject matter wherein the mesa semiconductor body is intimately bonded (e.g., by electroplating the semiconductor with a thick metal layer) to a thick electrical and/or thermal conductor member of larger lateral extent than the semiconductor body. | |
626 | .. Combined with passivating coating: |
This subclass is indented under subclass 623. Subject matter wherein there is a surface protectant or passivating coating on the surface of the mesa physical configuration. | |
627 | . With specified crystal plane or axis: |
This subclass is indented under subclass 618. Subject matter wherein the physical configuration of the device is along a specified crystal plane or axis. | |
628 | .. Major crystal plane or axis other than (100), (110), or (111) (e.g., (731) axis, crystal plane several degrees from (100) toward (011), etc.): |
This subclass is indented under subclass 627. Subject matter wherein the major crystal plane or axis is other than (100), (110), or (111). | |
629 | WITH MEANS TO CONTROL SURFACE EFFECTS: |
This subclass is indented under the class definition. Subject matter wherein the active junction device has means
to modify (e.g., reduce, or eliminate) electrical field effects
which take place at the device surface or to modify (e.g., reduce
or eliminate) inhomogeneities in electrical properties of a semiconductor
crystal region due to effects caused by the discontinuity of the crystal
lattice at the surface.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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630 | . With inversion-preventing shield electrode: |
This subclass is indented under subclass 629. Subject matter wherein the means to control surface effects includes an electrode, insulated from the semiconductor surface, which electrode is configured to prevent inversion of the conductivity type of the surface due to surface effects. | |
631 | . In compound semiconductor material (e.g., GaAs): |
This subclass is indented under subclass 629. Subject matter wherein the means to control surface effects are provided in a compound semiconductor material (e.g., GaAs). | |
632 | . Insulating coating: |
This subclass is indented under subclass 629. Subject matter wherein there is a surface coating of electrically insulating material on the semiconductor body to control surface effects. | |
633 | .. With thermal expansion compensation (e.g., thermal expansion of glass passivant matched to that of semiconductor): |
This subclass is indented under subclass 632. Subject matter wherein the insulating coating includes means
to compensate for mismatches in thermal expansion coefficient between
different portions of the device, such as forming the insulating
coating of a material which closely matches the thermal expansion
coefficient of the underlying semiconductor.
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634 | .. Insulating coating of glass composition containing component to adjust melting or softening temperature (e.g., low melting point glass): |
This subclass is indented under subclass 632. Subject matter wherein the insulating coating comprises
a glass composition containing a component to adjust the melting
or softening temperature.
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635 | .. Multiple layers: |
This subclass is indented under subclass 632. Subject matter wherein the insulating coating comprises multiple layers on the surface of the semiconductor body. | |
636 | ... At least one layer of semi-insulating material: |
This subclass is indented under subclass 635. Subject matter wherein at least one of the multiple insulating layers is made of a semi-insulating material (i.e., has a resistivity between that of a semiconductor and that of an insulator). | |
637 | ... Three or more insulating layers: |
This subclass is indented under subclass 635. Subject matter wherein there are three or more insulating coatings on the surface of the semiconductor body. | |
638 | ... With discontinuous or varying thickness layer (e.g., layer covers only selected portions of semiconductor): |
This subclass is indented under subclass 635. Subject matter wherein there are discontinuous or varying thickness layers in at least one of the multiple insulating layers over the semiconductor body. | |
639 | ... At least one layer of silicon oxynitride: |
This subclass is indented under subclass 635. Subject matter wherein at least one of the multiple insulating layers is made of a mixture of the oxides and nitrides of silicon. | |
640 | ... At least one layer of silicon nitride: |
This subclass is indented under subclass 635. Subject matter wherein there is at least one layer of silicon nitride in the multiple insulating layers on the semiconductor body. | |
641 | .... Combined with glass layer: |
This subclass is indented under subclass 640. Subject matter wherein in addition to the layer of silicon
nitride, there is at least one layer of glass in the multiple insulating
layers on the semiconductor body.
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642 | ... At least one layer of organic material: |
This subclass is indented under subclass 635. Subject matter wherein at least one insulating layer comprises
an organic compound, i.e., one which has a molecule characterized
by two carbon atoms bonded together, one atom of carbon being bonded
to at least one atom of hydrogen or a halogen, or one atom or carbon bonded
to at least one atom of nitrogen by a single or double bond, certain
compounds such as HCN, CN-CN, HNCO, HNCS, cyanogen halides, cyanamide,
fulminic acid and metal carbides, being exceptions to this rule.
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643 | .... Polyimide or polyamide: |
This subclass is indented under subclass 642. Subject matter wherein the at least one organic insulating
layer comprises polyamide (i.e., a polymeric compound) resulting
from replacement of an atom of hydrogen in an organic amine by an
organic univalent acid radical, or polyimide, i.e., a polymeric
compound resulting from replacement of both atoms of hydrogen in
an organic amine by organic univalent acid radicals or by an organic
divalent acid radical.
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644 | ... At least one layer of glass: |
This subclass is indented under subclass 635. Subject matter wherein there is at least one layer of glass
in the multiple insulating layers on the semiconductor body.
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645 | ... Insulating layer containing specified electrical charge (e.g., net negative electrical charge): |
This subclass is indented under subclass 635. Subject matter wherein the multiple insulating layers, or at least one of the insulating layers, has a specified electrical charge. | |
646 | .. Coating of semi-insulating material (e.g., amorphous silicon or silicon-rich silicon oxide): |
This subclass is indented under subclass 632. Subject matter wherein the insulating layer is composed of a semi-insulating material. | |
647 | .. Insulating layer recessed into semiconductor surface (e.g., LOCOS oxide): |
This subclass is indented under subclass 632. Subject matter wherein the insulating layer is recessed
into the semiconductor surface.
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648 | ... Combined with channel stop region in semiconductor: |
This subclass is indented under subclass 647. Subject matter wherein the recessed insulating layer is combined with a channel stop region, i.e., a region of heavy doping concentration in the underlying semiconductor surface to prevent inversion of the surface by formation of a layer of induced minority carriers. | |
649 | .. Insulating layer of silicon nitride or silicon oxynitride: |
This subclass is indented under subclass 632. Subject matter wherein the insulating layer is composed of silicon nitride or of a mixture of silicon oxide and silicon nitride. | |
650 | .. Insulating layer of glass: |
This subclass is indented under subclass 632. Subject matter wherein the insulating layer is composed
of glass.
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651 | .. Details of insulating layer electrical charge (e.g., negative insulator layer charge): |
This subclass is indented under subclass 632. Subject matter wherein the electrical charge characteristics of an insulating layer are specified. | |
652 | . Channel stop layer: |
This subclass is indented under subclass 629. Subject matter wherein the means to control surface effects
comprises a channel stop region (i.e., a region of heavy doping
concentration in the underlying semiconductor surface to prevent
inversion of the surface by formation of a layer of induced minority
carriers).
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653 | WITH SPECIFIED SHAPE OF PN JUNCTION: |
This subclass is indented under the class definition. Subject matter wherein the device has at least one junction between semiconductor regions of opposite conductivity type (P and N), and wherein the interface between at least one P region and its adjoining N region has a specified shape or geometrical configuration. | |
654 | . Interdigitated pn junction or more heavily doped side of junction is concave: |
This subclass is indented under subclass 653. Subject matter wherein the device has at least one pn junction
which is interdigitated (i.e., in which plural layers or fingers
of n type material alternate with plural layers or fingers of
p-type material, with then-type layers or fingers being parts
of a single unitary n region and the p-type layers or fingers being
parts of a single unitary p-region).
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655 | WITH SPECIFIED IMPURITY CONCENTRATION GRADIENT: |
This subclass is indented under the class definition. Subject matter wherein the active solid-state device includes
at least one region of semiconductor material with a specified profile or
gradient of impurity doping concentration.
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656 | . With high resistivity (e.g., "intrinsic") layer between P and N layers (e.g., PIN diode): |
This subclass is indented under subclass 655. Subject matter wherein the device has a P doped region and
an N doped region, separated by a region with very low impurity
doping, so that the region is of high resistivity or "intrinsic" (undoped)
semiconductor.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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657 | . Stepped profile: |
This subclass is indented under subclass 655. Subject matter wherein the device includes at least one region of the same conductivity type (P or N) wherein the doping concentration varies abruptly (e.g., a P+ to P- junction). | |
658 | PLATE TYPE RECTIFIER ARRAY: |
This subclass is indented under the class definition. Subject matter in which the device comprises plates of material
each of which is coated with a layer of semiconductor material (e.g.,
copper oxide or selenium) which forms a rectifying barrier junction,
the device being made up of several flat conductive plates and semiconductor
material layers to form a rectifier array.
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659 | WITH SHIELDING (E.G., ELECTRICAL OR MAGNETIC SHIELDING, OR FROM ELECTROMAGNETIC RADIATION OR CHARGED PARTICLES): |
This subclass is indented under the class definition. Subject matter in which means is provided for protecting
an active solid-state device by providing a barrier to prevent electrical
or magnetic radiation or fields or charged particles from reaching
the device, or to limit the amount of such radiation or particles
reaching the device.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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660 | . With means to shield device contained in housing or package from charged particles (e.g., alpha particles) or highly ionizing radiation (i.e., hard X-rays or shorter wavelength): |
This subclass is indented under subclass 659. Subject matter wherein the device is provided with means to shield it from charged particles or highly ionizing radiation contained in a housing or package separate and apart from the shielding means. | |
661 | SUPERCONDUCTIVE CONTACT OR LEAD: |
This subclass is indented under the class definition. Subject matter wherein an active solid-state device contains,
or is connected to, an electrical contact or lead (pronounced "leed") which
is made of a material whose electrical resistivity drops to zero
at a particular temperature called a critical transition temperature (Tc).
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662 | . Transmission line or shielded: |
Subject matter under 661 in which the superconductive electrical
lead has controlled electrical characteristics designed to convey
high frequency (e.g., greater than 3 megahertz) signals or narrow
pulse signals; or is surrounded by a separate electrical conductor
or envelope, called a shield, designed to minimize the effects of
nearby electrical circuits.
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663 | . On integrated circuit: |
Subject matter under 661 in which the superconductive contact or lead is associated with an electrical network made up of more than one electronic device, including at least one active solid-state electronic device, in a unitary structure. | |
664 | TRANSMISSION LINE LEAD (E.G., STRIPLINE, COAX, ETC.): |
This subclass is indented under the class definition. Subject matter wherein an active solid-state device is provided
with an electrical connection or lead with controlled electrical
characteristics used to transmit high-frequency, e.g., greater than
3 megahertz, or narrow pulse signals to or from the device.
SEE OR SEARCH CLASS:
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665 | CONTACTS OR LEADS INCLUDING FUSIBLE LINK MEANS OR NOISE SUPPRESSION MEANS: |
This subclass is indented under the class definition. Subject matter wherein an active solid-state device is provided
with electrical contacts or leads (pronounced "leeds")
which contain portions which have a composition or are made so that
they will melt at a relatively low temperature to form an open circuit
and thereby protect the device in case excessive current, e.g.,
a current spike from lightning, or voltage is provided to the contact
or lead, or contains means designed to suppress unwanted electrical
disturbances in the electrical contacts or leads.
SEE OR SEARCH CLASS:
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666 | LEAD FRAME: |
This subclass is indented under the class definition. Subject matter wherein the active solid-state device is
provided with a conductive metal network which may have relatively
large area portions, commonly called pads or flags, for direct contact
with semiconductor chips or dice, and lead elements for facilitating
electrical interconnection of the chips or dies via intermediate
(e.g., jumper) connections to other electronic devices or components.
SEE OR SEARCH CLASS:
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667 | . With dam or vent for encapsulant: |
This subclass is indented under subclass 666. Subject matter with a portion or portions to block encapsulant flow, typically from flowing out of a mold during an encapsulation process, or vent means (e.g., grooves in lead frame leads) to permit egress to the atmosphere for air or other gases which are inside a mold during encapsulation. | |
668 | . On insulating carrier other than a printed circuit board: |
This subclass is indented under subclass 666. Subject matter wherein the lead frame is mounted on an insulating
carrier other than a printed circuit board.
SEE OR SEARCH CLASS:
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669 | . With stress relief: |
This subclass is indented under subclass 666. Subject matter wherein means are provided to alleviate stresses and strains (e.g., mechanical or thermal stresses) to which a lead frame is subjected. | |
670 | . With separate tie bar element or plural tie bars: |
This subclass is indented under subclass 666. Subject matter in which a frame element used to tie or connect a semiconductor chip pad/flag and/or lead fingers frame members is a separate element and not part of the lead frame itself or wherein plural tie bar elements are provided as part of a lead frame. | |
671 | .. Of insulating material: |
This subclass is indented under subclass 670. Subject matter wherein the separate tie bar element or the plural tie bars are made of electrically insulating material. | |
672 | . Small lead frame (e.g., "spider" frame) for connecting a large lead frame to a semiconductor chip: |
This subclass is indented under subclass 666. Subject matter wherein the means used to interconnect a chip or die to a large lead frame is a small lead frame with contact elements radiating from a central location for interconnection with a chip mounted on a large lead frame chip pad at that location to peripheral locations for interconnection with large lead frame leads. | |
673 | . With bumps on ends of lead fingers to connect to semiconductor: |
This subclass is indented under subclass 666. Subject matter wherein bump contacts are located at or near the ends of lead fingers to provide contact with a semiconductor chip. | |
674 | . With means for controlling lead tension: |
This subclass is indented under subclass 666. Subject matter wherein means are provided for controlling the tension under which an electrical lead is placed including, for example, a bend in the lead, an area of reduced lead thickness, etc. | |
675 | . With heat sink means: |
This subclass is indented under subclass 666. Subject matter wherein a heat sink means is provided, either as part of the lead frame or in addition to the lead frame for cooling the active solid-state device. | |
676 | . With structure for mounting semiconductor chip to lead frame (e.g., configuration of die bonding flag, absence of a die bonding flag, recess for LED): |
This subclass is indented under subclass 666. Subject matter wherein the lead frame is provided with specified
structure means to mount a semiconductor chip thereto, or is specified
to not have a pad for mounting the chip.
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677 | . Of specified material other than copper (e.g., Kovar (T.M.)): |
This subclass is indented under subclass 666. Subject matter wherein the electrically conductive lead frame is made up of a specific material other copper, which is a common material for lead frames. | |
678 | HOUSING OR PACKAGE: |
This subclass is indented under the class definition. Subject matter wherein preformed physical means to cover
or protect a solid-state electronic device is provided therefor.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
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679 | . Smart (e.g., credit) card package: |
Subject matter under 678 wherein the housing or package
is in a form which permits it to be used as a credit card.
SEE OR SEARCH CLASS:
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680 | . With window means: |
Subject matter under 678 wherein the housing or package has a physical opening or area otherwise transparent to ultraviolet, visible, or infrared light. | |
681 | .. For erasing EPROM: |
This subclass is indented under subclass 680. Subject matter wherein the window means is provided for transmitting light to erase an electrically programmable read-only memory (EPROM). | |
682 | . With desiccant, getter, or gas filling: |
This subclass is indented under subclass 678. Subject matter including a desiccant (i.e., a material for absorbing moisture); a getter (i.e., a material which absorbs undesirable semiconductor, housing or package contaminants); or wherein a gaseous material fills the housing or package. | |
683 | . With means to prevent explosion of package: |
This subclass is indented under subclass 678. Subject matter including means to prevent explosion of a housing or package. | |
684 | . With semiconductor element forming part (e.g., base, of housing): |
This subclass is indented under subclass 678. Subject matter wherein part of the housing is formed by
a semiconductor element.
| |||
685 | . Multiple housings: |
This subclass is indented under subclass 678. Subject matter wherein more than one housing is provided
for a solid-state active electronic device, or wherein plural housings,
each containing one or more solid-state active devices, are constructed
as a unitary structure.
| |||
686 | .. Stacked arrangement: |
This subclass is indented under subclass 685. Subject matter wherein a plurality of housings are placed one upon another, vertically. | |
687 | . Housing or package filled with solid or liquid electrically insulating material: |
This subclass is indented under subclass 678. Subject matter wherein the housing or package is filled
with a solid or liquid electrically insulating material.
SEE OR SEARCH CLASS:
| |||||
688 | . With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, e.g., ring: |
This subclass is indented under subclass 678. Subject matter wherein the package or housing has two large
area electrodes which are in press contact with opposite sides of
a semiconductor chip and wherein the electrode edges are surrounded
by an electrically insulating medium (e.g., a ring).
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||||
689 | .. Rigid electrode portion: |
This subclass is indented under subclass 688. Subject matter wherein the large area electrodes are rigid
in whole or in part.
| |||
690 | . With contact or lead: |
This subclass is indented under subclass 678. Subject matter wherein the device is provided with a contact or lead, in addition to or as part of the package or housing. | |
691 | .. Having power distribution means (e.g., bus structure): |
This subclass is indented under subclass 690. Subject matter wherein the contact or lead includes means for distributing electrical power to one or more active solid-state devices within the package or housing. | |
692 | .. With particular lead geometry: |
This subclass is indented under subclass 690. Subject matter wherein the contact or lead provided as part of or in addition to the package or housing has a specified geometrical configuration. | |
693 | ... External connection to housing: |
This subclass is indented under subclass 692. Subject matter wherein the contact or lead having a specified geometry comprises an electrical connection for connecting the package or housing and its contained active solid-state device to other electrical devices or circuits. | |
694 | .... Axial leads: |
This subclass is indented under subclass 693. Subject matter wherein the leads or contacts which form an external connection to the housing or package extend out opposite ends along an axis of symmetry of a housing or package. | |
695 | .... Fanned/radial leads: |
This subclass is indented under subclass 693. Subject matter wherein the leads or contacts which form
an external connection to the housing or package extend radially
outward from the package.
| |||
696 | .... Bent (e.g., J-shaped) lead: |
This subclass is indented under subclass 693. Subject matter wherein the leads or contacts which form
an external connection to the housing or package include one or
more leads which have a curved end portion (e.g., for mounting on
the top surface of a printed circuit board).
| |||
697 | .... Pin grid type: |
This subclass is indented under subclass 693. Subject matter wherein the leads or contacts which form
an external connection to the housing or package are in the form
of a grid or matrix of elongated pins.
| |||
698 | .. With specific electrical feedthrough structure: |
This subclass is indented under subclass 690. Subject matter wherein a specific structure is provided for feeding electrical contacts or leads into or out of the housing or package. | |
699 | ... Housing entirely of metal except for feedthrough structure: |
Subject matter under 698 wherein the housing or package
is made entirely of metal except for the portion wherein the electrical
contacts or leads are fed through.
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700 | .. Multiple contact layers separated from each other by insulator means and forming part of a package or housing (e.g., plural ceramic layer package): |
This subclass is indented under subclass 690. Subject matter wherein the housing or package combined with a contact or lead structure is in the form of a multiple layered insulating composite with plural electrical connection layers located between layers of insulator material. | |
701 | . Insulating material: |
This subclass is indented under subclass 678. Subject matter wherein the housing or package is made of an electrically insulating material. | |
702 | .. Of insulating material other than ceramic: |
Subject matter under 701 wherein the housing is made of
electrically insulating material other than ceramic (e.g., the housing
is made of glass or of a single crystal insulator material).
| |||
703 | .. Composite ceramic, or single ceramic with metal: |
This subclass is indented under subclass 701. Subject matter wherein the housing is a composite made up of at least two ceramic materials (e.g., alumina and beryllia) or of a single ceramic material with a metal. | |
704 | .. Cap or lid: |
This subclass is indented under subclass 701. Subject matter wherein the housing or package is provided with a cap or lid. | |
705 | .. Of high thermal conductivity ceramic (e.g., BeO): |
This subclass is indented under subclass 701. Subject matter wherein the housing is made of ceramic which has high thermal conductivity to promote heat dissipation from the housing. | |
706 | .. With heat sink: |
This subclass is indented under subclass 701. Subject matter wherein the insulating housing has a heat
sink to dissipate heat.
SEE OR SEARCH CLASS:
| |||||||
707 | ... Directly attached to semiconductor device: |
This subclass is indented under subclass 706. Subject matter wherein the heat sink is attached directly to the semiconductor device. | |
708 | . Entirely of metal except for feedthrough: |
This subclass is indented under subclass 678. Subject matter wherein the housing or package is made entirely
of metal except for the portion wherein the electrical contacts
or leads are fed through.
| |||
709 | .. With specified insulator to isolate device from housing: |
This subclass is indented under subclass 708. Subject matter wherein a specific insulator means is provided to electrically isolate the active solid-state device contained in the metal package or housing from the metal package or housing to prevent electrical short circuits due to the housing or package. | |
710 | .. With specified means (e.g., lip) to seal base to cap: |
This subclass is indented under subclass 708. Subject matter wherein specific means are provided to seal the cap to the base such as, for example, a bead or lip or boss around the periphery of the base. | |
711 | .. With raised portion of base for mounting semiconductor chip: |
This subclass is indented under subclass 708. Subject matter wherein a portion of the base is raised above the rest of the base and the raised portion provides a base on which to mount a semiconductor chip with an active solid-state device therein or thereon. | |
712 | . With provision for cooling the housing or its contents: |
This subclass is indented under subclass 678. Subject matter wherein means for cooling the housing or
its contents are provided in addition to natural cooling processes.
SEE OR SEARCH CLASS:
| |||||
713 | .. For integrated circuit: |
This subclass is indented under subclass 712. Subject matter wherein the solid-state electronic device for which cooling means is provided is an integrated circuit, which is a semiconductor substrate which contains a plurality of active solid-state electronic devices. | |
714 | .. Liquid coolant: |
This subclass is indented under subclass 712. Subject matter wherein the means provided for cooling the housing or its contents is a liquid. | |
715 | ... Boiling (evaporative) liquid: |
This subclass is indented under subclass 714. Subject matter wherein the cooling means involves boiling
a liquid to provide evaporative cooling.
SEE OR SEARCH CLASS:
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716 | ... Cryogenic liquid coolant: |
This subclass is indented under subclass 714. Subject matter wherein the cooling means uses a liquid to
maintain device temperatures at or below 100 degrees Kelvin.
SEE OR SEARCH CLASS:
| |||||
717 | .. Isolation of cooling means (e.g., heat sink) by an electrically insulating element (e.g., spacer): |
This subclass is indented under subclass 712. Subject matter wherein an insulating element is used to physically separate a cooling means from an active solid-state electronic device or a housing therefor. | |
718 | .. Heat dissipating element held in place by clamping or spring means: |
This subclass is indented under subclass 712. Subject matter wherein an element for dissipating heat is held in place by means to clamp it to the device or vice versa, or by a spring to position the device and heat dissipating element in thermal contact with each other. | |
719 | ... Pressed against semiconductor element: |
This subclass is indented under subclass 718. Subject matter wherein the heat dissipating element and the active device are in press contact with each other. | |
720 | .. Heat dissipating element has high thermal conductivity insert (e.g., copper slug in aluminum heat sink): |
This subclass is indented under subclass 712. Subject matter wherein the heat dissipating element has a relatively high thermal conductivity vis-a-vis a larger (main) heat sink into which it is inserted (e.g., a copper slug in an aluminum heat sink). | |
721 | .. With gas coolant: |
This subclass is indented under subclass 712. Subject matter wherein the cooling means uses a gas to provide the cooling (e.g., by convection). | |
722 | ... With fins: |
This subclass is indented under subclass 721. Subject matter wherein the cooling means has fins, i.e., long, thin, blade like structures used to dissipate heat to the gas coolant. | |
723 | . For plural devices: |
This subclass is indented under subclass 678. Subject matter wherein a package or housing is provided
for more than one electronic device, at least one of the electronic
devices being an active solid-state device.
SEE OR SEARCH CLASS:
| |||||
724 | .. With discrete components: |
This subclass is indented under subclass 723. Subject matter wherein at least some of the electronic components are in the form of an individual device per semiconductor chip, as contrasted to a single integrated circuit containing plural semiconductor devices. The discrete components may be active solid-state devices or passive components such as resistors, capacitors, or inductors. | |
725 | .. With electrical isolation means: |
This subclass is indented under subclass 723. Subject matter wherein means are provided to electrically isolate the plural devices from each other. | |
726 | ... Devices held in place by clamping: |
This subclass is indented under subclass 725. Subject matter wherein the plural devices which are electrically isolated are held in place by clamp means, i.e., by means which press devices into place. | |
727 | . Device held in place by clamping: |
This subclass is indented under subclass 678. Subject matter wherein at least one of the plural devices is held in place by clamp means (i.e., by means which press a device into place). | |
728 | . For high frequency (e.g., microwave) device: |
This subclass is indented under subclass 678. Subject matter wherein the active solid-state device provided with a housing or package is a high frequency solid-state electronic device operating at high frequencies, such as microwave frequencies or above. | |
729 | . Portion of housing of specific materials: |
This subclass is indented under subclass 678. Subject matter wherein at least a portion of the housing or package is made of specific materials. | |
730 | . Outside periphery of package having specified shape or configuration: |
This subclass is indented under subclass 678. Subject matter wherein the outside periphery of a package or housing has a particular shape or configuration. | |
731 | . With housing mount: |
This subclass is indented under subclass 678. Subject matter wherein the housing or package has means
(e.g., a flange or threaded stud) for attaching the housing to a
support.
| |||
732 | .. Flanged mount: |
This subclass is indented under subclass 731. Subject matter wherein the housing mount is a flange with openings therein (e.g., threaded holes) to permit the housing to be attached (e.g., by fasteners) to a support. | |
733 | .. Stud mount: |
This subclass is indented under subclass 731. Subject matter wherein the housing mount is a threaded element shaped like a bolt extending from the housing for fastening into a threaded hole in a support. | |
734 | COMBINED WITH ELECTRICAL CONTACT OR LEAD: |
This subclass is indented under the class definition. Subject matter wherein the active solid-state device is
provided with one or more electrical contacts or leads.
SEE OR SEARCH THIS CLASS, SUBCLASS:
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735 | . Beam leads (i.e., leads that extend beyond the ends or sides of a chip component): |
This subclass is indented under subclass 734. Subject matter wherein electrical contact leads extend like
beams beyond the ends of a chip component.
SEE OR SEARCH CLASS:
| |||
736 | .. Layered: |
This subclass is indented under subclass 735. Subject matter wherein the leads are made of at least two separate layers of the same or different material. | |
737 | . Bump leads: |
This subclass is indented under subclass 734. Subject matter wherein an electrical contact is in the form of a relatively abrupt protuberance on the surface of a solid-state electronic device or chip/die containing such a device. | |
738 | .. Ball shaped: |
This subclass is indented under subclass 737. Subject matter wherein the bump contacts have the spherical
shape of a ball.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
739 | . With textured surface: |
This subclass is indented under subclass 734. Subject matter wherein the surface of the contact or lead is rough or has a characteristic of a closely interwoven fabric, rather than being smooth. | |
740 | . With means to prevent contact from penetrating shallow PN junction (e.g., prevention of aluminum "spiking"): |
This subclass is indented under subclass 734. Subject matter wherein means are provided for preventing
an electrical contact from penetrating into the relatively thin
PN junction region.
| |||
741 | . Of specified material other than unalloyed aluminum: |
This subclass is indented under subclass 734. Subject matter wherein the contact or lead is made of a specified material other than an aluminum alloy. | |
742 | .. With a semiconductor conductivity substitution type dopant (e.g., germanium in the case of a gallium arsenide semiconductor) in a contact metal): |
This subclass is indented under subclass 741. Subject matter wherein the contact metal is doped with atoms of an element, e.g., germanium in the case of a semiconductor of gallium arsenide, which changes the conductivity of (i.e., introduces holes or electrons into) the semiconductor material to which the contact is connected. | |
743 | ... For compound semiconductor material: |
This subclass is indented under subclass 742. Subject matter in which the electrical contact material contacts and contains a dopant for a semiconductor material which is a chemical compound, as contrasted to an elemental semiconductor. | |
744 | .. For compound semiconductor material: |
This subclass is indented under subclass 741. Subject matter in which the electrical contact material contacts a semiconductor material which is a chemical compound, as contrasted to an elemental semiconductor. | |
745 | ... Contact for III-V material: |
This subclass is indented under subclass 744. Subject matter in which the compound semiconductor material is a group III-V compound, i.e., one component is from periodic table group III and the other is from periodic table group V. | |
746 | .. Composite material (e.g., fibers or strands embedded in solid matrix): |
This subclass is indented under subclass 741. Subject matter in which the semiconductor contact material is formed as a composite of, for example, fibers or strands embedded in a solid matrix. | |
747 | .. With thermal expansion matching of contact or lead material to semiconductor active device: |
This subclass is indented under subclass 741. Subject matter in which the electrical contact or lead material
is chosen to have a coefficient of thermal expansion which closely
matches that of the semiconductor active device material.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
748 | ... Plural layers of specified contact or lead material: |
This subclass is indented under subclass 747. Subject matter wherein the thermal expansion matching lead material is layered. | |
749 | .. At least portion of which is transparent to ultraviolet, visible or infrared light: |
This subclass is indented under subclass 741. Subject matter wherein at least part of the contact or lead
is transparent to ultraviolet, visible, or infrared light.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||||
750 | .. Layered: |
This subclass is indented under subclass 741. Subject matter wherein the specified contact material is layered. | |
751 | ... At least one layer forms a diffusion barrier: |
This subclass is indented under subclass 750. Subject matter wherein at least one layer forms a barrier
to the diffusion of the contact material into the semiconductor
or into another contact layer.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
752 | ... Planarized to top of insulating layer: |
This subclass is indented under subclass 750. Subject matter wherein a contact or lead and an insulating layer to which it is connected form a single planar surface. | |
753 | ... With adhesion promoting means (e.g., layer of material) to promote adhesion of contact to an insulating layer: |
This subclass is indented under subclass 750. Subject matter wherein a means, e.g., a layer of material, is provided to promote adhesion of an electrical contact or lead to an insulating surface. | |
754 | ... At least one layer of silicide or polycrystalline silicon: |
This subclass is indented under subclass 750. Subject matter wherein at least one layer of material is
made up of a silicide or polycrystalline silicon.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
755 | .... Polysilicon laminated with silicide: |
This subclass is indented under subclass 754. Subject matter wherein the layers include a polysilicon
laminated with a silicide.
| |||
756 | .... Multiple polysilicon layers: |
This subclass is indented under subclass 754. Subject matter wherein a layered electrical contact or lead includes multiple polysilicon layers. | |
757 | .... Silicide of refractory or platinum group metal: |
This subclass is indented under subclass 754. Subject matter wherein a layered electrical contact or lead includes a silicide of a metal found in groups IVA, VA, VIA or VIIIA (other than iron (Fe), nickel (Ni) or cobalt (Co)) of the periodic table of the elements. | |
758 | ... Multiple metal levels on semiconductor, separated by insulating layer (e.g., multiple level metallization for integrated circuit): |
This subclass is indented under subclass 750. Subject matter wherein there are plural layers of metal
forming electrical contact material, the layers being separated
by intervening layers of insulator material.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
| |||||||
759 | .... Including organic insulating material between metal levels: |
This subclass is indented under subclass 758. Subject matter wherein there is at least one layer of organic insulating material between different layers of metal. An organic compound is one which fulfills the requirements of the Class 260 definition, i.e., has a molecule characterized by two carbon atoms bonded together, one atom of carbon being bonded to at least one atom of hydrogen or a halogen, or one atom or carbon bonded to at least one atom of nitrogen by a single or double bond, certain compounds such as HCN, CN-CN, HNCO, HNCS, cyanogen halides, cyanamide, fulminic acid and metal carbides, being exceptions to this rule. | |
760 | .... Separating insulating layer is laminate or composite of plural insulating materials (e.g., silicon oxide on silicon nitride, silicon oxynitride): |
This subclass is indented under subclass 758. Subject matter wherein there is at least one separating insulator layer between different metal layers, which separating insulator layer is itself made up of plural sublayers, or which separating insulator layer is a composite such as a mixture of silicon oxide and silicon nitride. | |
761 | ... At least one layer containing vanadium, hafnium, niobium, zirconium, or tantalum: |
This subclass is indented under subclass 750. Subject matter wherein a layered electrical contact or lead has at least one layer which contains vanadium (V), hafnium (Hf), niobium (Nb), zirconium (Zr), or tantalum (Ta). | |
762 | ... At least one layer containing silver or copper: |
This subclass is indented under subclass 750. Subject matter wherein a layered electrical contact or lead has at least one layer which contains copper (Cu) or silver (Ag). | |
763 | ... At least one layer of molybdenum, titanium, or tungsten: |
This subclass is indented under subclass 750. Subject matter wherein a layered electrical contact or lead has at least one layer of molybdenum (Mo), titanium (Ti) or tungsten (W). | |
764 | .... Alloy containing molybdenum, titanium, or tungsten: |
This subclass is indented under subclass 763. Subject matter wherein at least one layer containing molybdenum, titanium, or tungsten contains an alloy thereof. | |
765 | ... At least one layer of an alloy containing aluminum: |
This subclass is indented under subclass 750. Subject matter wherein a layered electrical contact or lead has at least one layer of an alloy containing aluminum (Al). | |
766 | ... At least one layer containing chromium or nickel: |
This subclass is indented under subclass 750. Subject matter wherein a layered electrical contact or lead has at least one layer containing chromium (Cr) or nickel (Ni). | |
767 | .. Resistive to electromigration or diffusion of the contact or lead material: |
This subclass is indented under subclass 741. Subject matter wherein an electrical contact or lead material is adapted to resist electromigration of the contact or lead material, or diffusion of the contact or lead material into the material to which the contact is attached. | |
768 | .. Refractory or platinum group metal or alloy or silicide thereof: |
This subclass is indented under subclass 741. Subject matter wherein the specified contact or lead material is a refractory metal or a platinum group metal, i.e., a metal found in groups IVA, VA, VIA or VIIIA (other than iron (Fe), nickel (Ni) or cobalt (Co)) of the periodic table of the elements or a silicide (i.e., a binary compound of silicon), usually with a more electropositive element or radical, thereof. | |
769 | ... Platinum group metal or silicide thereof: |
This subclass is indented under subclass 768. Subject matter wherein the specified contact or lead material is a platinum group metal (i.e., platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), osmium (Os) or iridium (Ir)) or a silicide i.e., a binary compound of silicon, usually with a more electropositive element or radical, thereof. | |
770 | ... Molybdenum, tungsten, or titanium or their silicides: |
This subclass is indented under subclass 768. Subject matter wherein the specified contact or lead material is molybdenum (Mo), tungsten (W), titanium (Ti), or their silicides, (i.e., a binary compound of one of them with silicon). | |
771 | .. Alloy containing aluminum: |
This subclass is indented under subclass 741. Subject matter wherein the specific contact or lead material is an alloy containing aluminum (Al). | |
772 | .. Solder composition: |
This subclass is indented under subclass 741. Subject matter wherein the specific contact or lead material
is a solder composition (i.e., a metal or metallic alloy that melts
at relatively low temperatures).
| |||
773 | . Of specified configuration: |
This subclass is indented under subclass 734. Subject matter in which an electrical contact or lead has a specific configuration or shape. | |
774 | .. Via (interconnection hole) shape: |
This subclass is indented under subclass 773. Subject matter wherein the shape or configuration of an electrical contact or lead is determined by the shape of a hole through an insulating layer through which the contact extends. | |
775 | .. Varying width or thickness of conductor: |
This subclass is indented under subclass 773. Subject matter wherein an electrical contact or lead has a width or thickness which varies over the length of the contact or lead. | |
776 | .. Cross-over arrangement, component or structure: |
This subclass is indented under subclass 773. Subject matter wherein means are provided for electrically
insulating electrical contact elements or leads which cross each
other to do so without a short circuit therebetween.
| |||
777 | . Chip mounted on chip: |
This subclass is indented under subclass 734. Subject matter wherein a semiconductor substrate of an active
solid-state device is electrically connected to, and positioned
on, another semiconductor substrate.
SEE OR SEARCH CLASS:
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778 | . Flip chip: |
This subclass is indented under subclass 734. Subject matter wherein a semiconductor substrate which contains an active solid-state electronic device has electric contacts on the top side thereof, the top side being that which contains an active solid-state electronic device, and which is flipped so that the contact side becomes the bottom side for connection with a substrate which has matching electrical contacts. | |
779 | . Solder wettable contact, lead, or bond: |
This subclass is indented under subclass 734. Subject matter wherein an electrical contact or lead has a surface to which solder will readily adhere. | |
780 | . Ball or nail head type contact, lead, or bond: |
This subclass is indented under subclass 734. Subject matter wherein a contact, lead, or bond is in the
form of a wire having an end for connection to the semiconductor
which is in the shape of a ball or nail head.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
781 | .. Layered contact, lead or bond: |
This subclass is indented under subclass 780. Subject matter wherein a ball or nail head type contact is made up of a plurality of layers of the same or different material. | |
782 | . Die bond: |
This subclass is indented under subclass 734. Subject matter wherein a semiconductor chip containing at
least one active solid-state device and provided with a contact
or lead is provided with a means for attaching the chip to a supporting
member.
| |||
783 | .. With adhesive means: |
This subclass is indented under subclass 782. Subject matter wherein adhesive means (e.g., a layer) is
provided to secure a die (chip) which contains an active solid-state
electronic device to a supporting member.
SEE OR SEARCH CLASS:
| |||||
784 | . Wire contact, lead, or bond: |
This subclass is indented under subclass 734. Subject matter wherein the contact, lead or bond is a very flexible, elongated, small diameter filament made of electrically conductive material. | |
785 | . By pressure alone: |
This subclass is indented under subclass 734. Subject matter wherein the electrical contact, lead or bond
is held in place by pressure alone (e.g., by a spring clip).
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
786 | . Configuration or pattern of bonds: |
This subclass is indented under subclass 734. Subject matter wherein the electrical contact, lead or bond,
has a specific configuration or pattern.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
787 | ENCAPSULATED: |
This subclass is indented under the class definition. Subject matter wherein an active solid-state electronic
device, often part of a semiconductor chip, is surrounded by an
electrically insulating material which forms a sealed encasement
therefor.
SEE OR SEARCH THIS CLASS, SUBCLASS:
SEE OR SEARCH CLASS:
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788 | . With specified encapsulant: |
This subclass is indented under subclass 787. Subject matter wherein the chemical composition of the material that encapsulates the active solid-state electronic device is specified. | |
789 | .. With specified filler material: |
This subclass is indented under subclass 788. Subject matter wherein a particular material has been added to an encapsulant material to give it desirable mechanical, thermal, electrical, or other desirable characteristics, and the material is specified. | |
790 | .. Plural encapsulating layers: |
This subclass is indented under subclass 788. Subject matter wherein the encapsulant is made up of more than one layer. | |
791 | .. Including polysiloxane (e.g., silicone resin): |
This subclass is indented under subclass 788. Subject matter wherein the encapsulant includes polysiloxane (i.e., any of various polymeric compounds which contain alternate silicon and oxygen atoms in either a linear or cyclic arrangement), often with one or two organic groups attached to each silicon atom. | |
792 | .. Including polyimide: |
This subclass is indented under subclass 788. Subject matter wherein the encapsulant includes polyimide
i.e., a polymeric compound resulting from replacement of both atoms
of hydrogen in an organic amine by organic univalent acid radicals
or by an organic divalent acid radical.
| |||
793 | .. Including epoxide: |
This subclass is indented under subclass 788. Subject matter wherein the encapsulant includes an epoxy compound (i.e., a compound containing three membered ring consisting or one oxygen and two carbon atoms). | |
794 | .. Including glass: |
This subclass is indented under subclass 788. Subject matter wherein the encapsulant contains glass (i.e., an amorphous inorganic, usually transparent or translucent substance consisting of a mixture of silicates or borates or phosphates formed by fusion of silica or of oxides of boron or phosphorous with a flux and stabilizer that cools to a rigid condition without crystallization). | |
795 | . With specified filler material: |
This subclass is indented under subclass 787. Subject matter wherein a particular material has been added to an encapsulant material to give it desirable mechanical, thermal, electrical, or other desirable characteristics, and the material is specified. | |
796 | . With heat sink embedded in encapsulant: |
This subclass is indented under subclass 787. Subject matter wherein a heat sink is embedded in the encapsulant.
SEE OR SEARCH CLASS:
| |||||
797 | ALIGNMENT MARKS: |
This subclass is indented under the class definition. Subject matter wherein the active solid-state device is provided with one or more indicia or marks used during fabrication of the device to facilitate accurate alignment of regions in the device. | |
798 | MISCELLANEOUS: |
This subclass is indented under the class definition. Subject matter wherein the subject matter is not otherwise provided for. | |
E47.001 | BULK NEGATIVE RESISTANCE EFFECT DEVICES, E.G., GUNN-EFFECT DEVICES, PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO) |
This main group provides for active devices which exhibit the characteristic of decreasing current rate with increasing applied voltage, processes or apparatus peculiar to the manufacture or treatment of such devices or of parts thereof. This subclass is substantially the same in scope as ECLA classification H01L47/00. | |
E47.002 | . Gunn-effect devices or transferred electron devices (EPO): |
This subclass is indented under subclass E47.001. This subclass is substantially the same in scope as ECLA classification H01L47/02. | |
E47.003 | .. Controlled by electromagnetic radiation (EPO): |
This subclass is indented under subclass E47.002. This subclass is substantially the same in scope as ECLA classification H01L47/02B. | |
E47.004 | .. Gunn diodes (EPO): |
This subclass is indented under subclass E47.002. This subclass is substantially the same in scope as ECLA classification H01L47/02C. | |
E47.005 | . Processes or apparatus peculiar to manufacture or treatment of these devices or of parts thereof (EPO): |
This subclass is indented under subclass E47.001. This subclass is substantially the same in scope as ECLA classification H01L47/00B. | |
E39.001 | DEVICES USING SUPERCONDUCTIVITY, PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO): |
This main group provides for semiconductor or solid state
devices with at least one potential-jump barrier or surface
barrier which include superconductive material, processes
or apparatus peculiar to the manufacture or treatment of such devices
or of parts thereof. This subclass is substantially the
same in scope as ECLA classification H01L39/00.
| |||
E39.002 | . Containers or mountings (EPO): |
This subclass is indented under subclass E39.001. This subclass is substantially the same in scope as ECLA classification H01L39/04. | |
E39.003 | .. For Josephson devices (EPO): |
This subclass is indented under subclass E39.002. This subclass is substantially the same in scope as ECLA classification H01L39/04B. | |
E39.004 | . Characterized by current path (EPO): |
This subclass is indented under subclass E.39.001. This subclass is substantially the same in scope as ECLA classification H01L39/06. | |
E39.005 | . Characterized by shape of element (EPO): |
This subclass is indented under subclass E39.001. This subclass is substantially the same in scope as ECLA classification H01L39/08. | |
E39.006 | . Characterized by material (EPO): |
This subclass is indented under subclass E39.001. This subclass is substantially the same in scope as ECLA classification H01L39/12. | |
E39.007 | .. Organic materials (EPO): |
This subclass is indented under subclass E39.006. This subclass is substantially the same in scope as ECLA classification H01L39/12B. | |
E39.008 | ... Fullerene superconductors, e.g., soccerball-shaped allotrope of carbon, e.g., C60, C94 (EPO): |
This subclass is indented under subclass E39.007. This subclass is substantially the same in scope as ECLA classification H01L39/12B2. | |
E39.009 | .. Ceramic materials (EPO): |
This subclass is indented under subclass E39.006. This subclass is substantially the same in scope as ECLA classification H01L39/12C. | |
E39.01 | ... Comprising copper oxide (EPO): |
This subclass is indented under subclass E39.009. This subclass is substantially the same in scope as ECLA classification H01L39/12C2. | |
E39.011 | .... Multilayered structures, e.g., super lattices (EPO): |
This subclass is indented under subclass E39.01. This subclass is substantially the same in scope as ECLA classification H01L39/12C2B. | |
E39.012 | . Devices comprising junction of dissimilar materials, e.g., Josephson-effect devices (EPO): |
This subclass is indented under subclass E39.001. This subclass is substantially the same in scope as ECLA classification H01L39/22. | |
E39.013 | .. Single electron tunnelling devices (EPO): |
This subclass is indented under subclass E39.012. This subclass is substantially the same in scope as ECLA classification H01L39/22B. | |
E39.014 | .. Josephson-effect devices (EPO): |
This subclass is indented under subclass E39.012. This subclass is substantially the same in scope as ECLA classification H01L39/22C. | |
E39.015 | ... Comprising high Tc ceramic materials (EPO): |
This subclass is indented under subclass E39.014. This subclass is substantially the same in scope as ECLA classification H01L39/22C2. | |
E39.016 | .. Three or more electrode devices, e.g., transistor-like structures (EPO): |
This subclass is indented under subclass E39.012. This subclass is substantially the same in scope as ECLA classification H01L39/22D. | |
E39.017 | . Permanent superconductor devices (EPO): |
This subclass is indented under subclass E39.001. This subclass is substantially the same in scope as ECLA classification H01L39/14. | |
E39.018 | .. Comprising high Tc ceramic materials (EPO): |
This subclass is indented under subclass E39.017. This subclass is substantially the same in scope as ECLA classification H01L39/14B. | |
E39.019 | .. Three or more electrode devices (EPO): |
This subclass is indented under subclass E39.012. This subclass is substantially the same in scope as ECLA classification H01L39/14C. | |
E39.02 | ... Field-effect devices (EPO): |
This subclass is indented under subclass E39.019. This subclass is substantially the same in scope as ECLA classification H01L39/14C2. | |
E51.001 | Organic solid state devices, processes or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof (EPO): |
This main group provides for solid state device using organic material or a combination of organic material with other material as active part of the device, processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof. This subclass is substantially the same in scope as ECLA classification H01L51/00. | |
E51.002 | . Structural detail of device (EPO): |
This subclass is indented under subclass E51.001. This subclass is substantially the same in scope as ECLA classification H01L51/20. | |
E51.003 | .. Organic solid-state device adapted for rectifying, amplifying, oscillating, or switching, or capacitors or resistors with potential or surface barrier (EPO): |
This subclass is indented under subclass E51.002. This
subclass is substantially the same in scope as ECLA classification
H01L51/20B.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E51.004 | ... Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (EPO): |
This subclass is indented under subclass E51.003. This subclass is substantially the same in scope as ECLA classification H01L51/20B2. | |
E51.005 | .... Field-effect device (e.g., TFT, FET) (EPO): |
This subclass is indented under subclass E51.004. This subclass is substantially the same in scope as ECLA classification H01L51/20B2B. | |
E51.006 | ..... Insulated gate field-effect transistor (EPO): |
This subclass is indented under subclass E51.005. This subclass is substantially the same in scope as ECLA classification H01L51/20B2B2. | |
E51.007 | ...... Comprising organic gate dielectric (EPO): |
This subclass is indented under subclass E51.006. This subclass is substantially the same in scope as ECLA classification H01L51/20B2B2B. | |
E51.008 | ... Controllable only by variation of electric current supplied or only electric potential applied to electrode carrying current to be rectified, amplified, oscillated, or switched (e.g., two terminal device) (EPO): |
This subclass is indented under subclass E51.003. This subclass is substantially the same in scope as ECLA classification H01L51/20B4. | |
E51.009 | .... Comprising Schottky junction (EPO): |
This subclass is indented under subclass E51.008. This subclass is substantially the same in scope as ECLA classification H01L51/20B4B. | |
E51.01 | .... Comprising organic/organic junction (e.g., heterojunction) (EPO): |
This subclass is indented under subclass E51.008. This subclass is substantially the same in scope as ECLA classification H01L51/20B4D. | |
E51.011 | .... Comprising organic/inorganic heterojunction (EPO): |
This subclass is indented under subclass E51.008. This subclass is substantially the same in scope as ECLA classification H01L51/20B4F. | |
E51.012 | .. Radiation-sensitive organic solid-state device (EPO): |
Subject matter under subclass E51.002 wherein the
solid-state device is responsive or sensitive to electromagnetic
radiation (e.g., infrared radiation), adapted
for a conversion of the radiation into electrical energy or for
a control of electrical energy by such radiation. This
subclass is substantially the same in scope as ECLA classification
H01L51/20C.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E51.013 | ... Metal-organic semiconductor-metal device (EPO): |
This subclass is indented under subclass E51.012. This subclass is substantially the same in scope as ECLA classification H01L51/20C2. | |
E51.014 | ... Comprising bulk heterojunction (EPO): |
This subclass is indented under subclass E51.012. This subclass is substantially the same in scope as ECLA classification H01L51/20C8. | |
E51.015 | ... Comprising organic/inorganic heterojunction (EPO): |
This subclass is indented under subclass E51.012. This subclass is substantially the same in scope as ECLA classification H01L51/20C4. | |
E51.016 | .... Majority carrier device using sensitization of wide band gap semiconductor (e.g., TiO2) (EPO): |
This subclass is indented under subclass E51.015. This subclass is substantially the same in scope as ECLA classification H01L51/20C4B. | |
E51.017 | ... Comprising organic semiconductor-organic semiconductor heterojunction (EPO): |
This subclass is indented under subclass E51.012. This subclass is substantially the same in scope as ECLA classification H01L51/20C6. | |
E51.018 | .. Light-emitting organic solid-state device with potential or surface barrier (EPO): |
Subject matter under subclass E51.002 wherein the
solid-state device having a potential or surface barrier
is adapted for generating light. This subclass is substantially
the same in scope as ECLA classification H01L51/20D.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E51.019 | ... Electrode (EPO): |
This subclass is indented under subclass E51.018. This subclass is substantially the same in scope as ECLA classification H01L51/20D2B. | |
E51.02 | .... Encapsulation (EPO): |
This subclass is indented under subclass E51.019. This
subclass is substantially the same in scope as ECLA classification
H01L51/20D2C.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
E51.021 | .... Arrangements for extracting light from device (e.g., Bragg reflector pair) (EPO): |
This subclass is indented under subclass E51.019. This subclass is substantially the same in scope as ECLA classification H01L51/20D2D. | |
E51.022 | ... Multicolor organic light-emitting device (OLED) (EPO): |
This subclass is indented under subclass E51.018. This subclass is substantially the same in scope as ECLA classification H01L51/20D4. | |
E51.023 | .. Molecular electronic device (EPO): |
This subclass is indented under subclass E51.002. This subclass is substantially the same in scope as ECLA classification H01L51/20F. | |
E51.024 | . Selection of material for organic solid-state device (EPO): |
This subclass is indented under subclass E51.001. This subclass is substantially the same in scope as ECLA classification H01L51/30. | |
E51.025 | .. For organic solid-state device adapted for rectifying, amplifying, oscillating, or switching, or capacitors or resistors with potential or surface barrier (EPO): |
This subclass is indented under subclass E51.024. This subclass is substantially the same in scope as ECLA classification H01L51/30B. | |
E51.026 | .. For radiation-sensitive or light-emitting organic solid-state device with potential or surface barrier (EPO): |
This subclass is indented under subclass E51.024. This subclass is substantially the same in scope as ECLA classification H01L51/30C. | |
E51.027 | .. Organic polymer or oligomer (EPO): |
This subclass is indented under subclass E51.024. This subclass is substantially the same in scope as ECLA classification H01L51/30D. | |
E51.028 | ... Comprising aromatic, heteroaromatic, or arrylic chains (e.g., polyaniline, polyphenylene, polyphenylene vinylene) (EPO): |
This subclass is indented under subclass E51.027. This subclass is substantially the same in scope as ECLA classification H01L51/30D2. | |
E51.029 | .... Heteroaromatic compound comprising sulfur or selene (e.g., polythiophene) (EPO): |
This subclass is indented under subclass E51.028. This subclass is substantially the same in scope as ECLA classification H01L51/30D2B. | |
E51.03 | ..... Polyethylene dioxythiophene and derivative (EPO): |
This subclass is indented under subclass E51.029. This subclass is substantially the same in scope as ECLA classification H01L51/30D2B2. | |
E51.031 | .... Polyphenylenevinylene and derivatives (EPO): |
This subclass is indented under subclass E51.028. This subclass is substantially the same in scope as ECLA classification H01L51/30D2D. | |
E51.032 | .... Polyflurorene and derivative (EPO): |
This subclass is indented under subclass E51.028. This subclass is substantially the same in scope as ECLA classification H01L51/30D2F. | |
E51.033 | ... Comprising aliphatic or olefinic chains (e.g., polyN-vinylcarbazol, PVC, PTFE) (EPO): |
This subclass is indented under subclass E51.027. This subclass is substantially the same in scope as ECLA classification H01L51/30D4. | |
E51.034 | .... Polyacetylene or derivatives (EPO): |
This subclass is indented under subclass E51.033. This subclass is substantially the same in scope as ECLA classification H01L51/30D4B. | |
E51.035 | .... PolyN-vinylcarbazol and derivative (EPO): |
This subclass is indented under subclass E51.033. This subclass is substantially the same in scope as ECLA classification H01L51/30D4D. | |
E51.036 | ... Copolymers (EPO): |
This subclass is indented under subclass E51.027. This subclass is substantially the same in scope as ECLA classification H01L51/30D6. | |
E51.037 | ... Ladder-type polymer (EPO): |
This subclass is indented under subclass E51.027. This subclass is substantially the same in scope as ECLA classification H01L51/30D8. | |
E51.038 | .. Carbon-containing materials (EPO): |
This subclass is indented under subclass E51.024. This subclass is substantially the same in scope as ECLA classification H01L51/30F. | |
E51.039 | ... Fullerenes (EPO): |
This subclass is indented under subclass E51.038. This subclass is substantially the same in scope as ECLA classification H01L51/30F2. | |
E51.04 | ... Carbon nanotubes (EPO): |
This subclass is indented under subclass E51.038. This subclass is substantially the same in scope as ECLA classification H01L51/30F4. | |
E51.041 | .. Coordination compound (e.g., porphyrin, phthalocyanine, metal(II) polypyridine complexes) (EPO): |
This subclass is indented under subclass E51.024. This subclass is substantially the same in scope as ECLA classification H01L51/30M. | |
E51.042 | ... Phthalocyanine (EPO): |
This subclass is indented under subclass E51.041. This subclass is substantially the same in scope as ECLA classification H01L51/30M2. | |
E51.043 | ... Metal complexes comprising Group IIIB metal (Al, Ga, In, or Ti) (e.g., Tris (8-hydroxyquinoline) aluminium (Alq3)) (EPO): |
This subclass is indented under subclass E51.041. This subclass is substantially the same in scope as ECLA classification H01L51/30M4. | |
E51.044 | ... Transition metal complexes (e.g., Ru(II) polypyridine complexes) (EPO): |
This subclass is indented under subclass E51.041. This subclass is substantially the same in scope as ECLA classification H01L51/30M6. | |
E51.045 | .. Biomolecule or macromolecule (e.g., proteins, ATP, chlorophyl, beta-carotene, lipids, enzymes) (EPO): |
This subclass is indented under subclass E51.024. This subclass is substantially the same in scope as ECLA classification H01L51/30P. | |
E51.046 | .. Silicon-containing organic semiconductor (EPO): |
This subclass is indented under subclass E51.024. This subclass is substantially the same in scope as ECLA classification H01L51/30S. | |
E51.047 | .. Macromolecular system with low molecular weight (e.g., cyanine dyes, coumarine dyes, tetrathiafulvalene) (EPO): |
This subclass is indented under subclass E51.024. This subclass is substantially the same in scope as ECLA classification H01L51/30H. | |
E51.048 | ... Charge transfer complexes (EPO): |
This subclass is indented under subclass E51.047. This subclass is substantially the same in scope as ECLA classification H01L51/30H2. | |
E51.049 | ... Polycondensed aromatic or heteroaromatic compound (e.g., pyrene, perylene, pentacene) (EPO): |
This subclass is indented under subclass E51.047. This subclass is substantially the same in scope as ECLA classification H01L51/30H4. | |
E51.05 | .... Aromatic compound containing heteroatom (e.g., perylenetetracarboxylic dianhydride, perylene tetracarboxylic diimide) (EPO): |
This subclass is indented under subclass E51.049. This subclass is substantially the same in scope as ECLA classification H01L51/30H4B. | |
E51.051 | ... Amine compound having at least two aryl on amine-nitrogen atom (e.g., triphenylamine) (EPO): |
This subclass is indented under subclass E51.047. This subclass is substantially the same in scope as ECLA classification H01L51/30H6. | |
E51.052 | .. Langmuir Blodgett film (EPO): |
This subclass is indented under subclass E51.024. This subclass is substantially the same in scope as ECLA classification H01L51/30L. | |
E43.001 | SEMICONDUCTOR OR SOLID-STATE DEVICES USING GALVANO-MAGNETIC OR SIMILAR MAGNETIC EFFECTS, PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO): |
This main group provides for semiconductor or solid state devices which respond to a magnetic field signal, processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof. This subclass is substantially the same in scope as ECLA classification H01L43/00. | |
E43.002 | . Hall-effect devices (EPO): |
This subclass is indented under subclass E43.43.001 This subclass is substantially the same in scope as ECLA classification H01L43/06. | |
E43.003 | .. Semiconductor Hall-effect devices (EPO): |
This subclass is indented under subclass E43.002. This subclass is substantially the same in scope as ECLA classification H01L43/06B. | |
E43.004 | . Magnetic-field-controlled resistors (EPO): |
This subclass is indented under subclass E43.001. This subclass is substantially the same in scope as ECLA classification H01L43/08. | |
E43.005 | . Selection of materials (EPO): |
This subclass is indented under subclass E43.001. This subclass is substantially the same in scope as ECLA classification H01L43/10. | |
E43.006 | . Processes or apparatus peculiar to manufacture or treatment of these devices or of parts thereof (EPO): |
This subclass is indented under subclass E43.001. This subclass is substantially the same in scope as ECLA classification H01L43/12. | |
E43.007 | .. For Hall-effect devices (EPO): |
This subclass is indented under subclass E43.006. This subclass is substantially the same in scope as ECLA classification H01L43/14. | |
E33.001 | Light emitting semiconductor devices having potential or surface barrier, processes or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof (EPO): |
This main group provides for semiconductor devices with
at least one potential-jump barrier or surface barrier
adapted for light emission, e.g. infra-red
emission, and processes or apparatus peculiar to the manufacture
or treatment of such devices or of parts thereof. This
subclass is substantially the same in scope as ECLA classification
H01L33/00.
| |||
E33.002 | . Device characterized by semiconductor body (EPO): |
This subclass is indented under subclass E33.001. This subclass is substantially the same in scope as ECLA classification H01L33/00C. | |
E33.003 | .. Particular crystalline orientation or structure (EPO): |
This subclass is indented under subclass E33.002. This subclass is substantially the same in scope as ECLA classification H01L33/00C2. | |
E33.004 | ... Comprising amorphous semiconductor (EPO): |
This subclass is indented under subclass E33.003. This subclass is substantially the same in scope as ECLA classification H01L33/00C2B. | |
E33.005 | .. Shape or structure (e.g., shape of epitaxial layer) (EPO): |
This subclass is indented under subclass E33.002. This subclass is substantially the same in scope as ECLA classification H01L33/00C3. | |
E33.006 | ... Shape of semiconductor body (EPO): |
This subclass is indented under subclass E33.005. This subclass is substantially the same in scope as ECLA classification H01L33/00C3B. | |
E33.007 | ... Shape of potential barrier (EPO): |
This subclass is indented under subclass E33.005. This subclass is substantially the same in scope as ECLA classification H01L33/00C3C. | |
E33.008 | ... Multiple quantum well structure (EPO): |
This subclass is indented under subclass E33.005. This subclass is substantially the same in scope as ECLA classification H01L33/00C3D. | |
E33.009 | .... Including, apart from doping materials or other only impurities, Group IV element (e.g., Si-SiGe superlattice) (EPO): |
This subclass is indented under subclass E33.008. This subclass is substantially the same in scope as ECLA classification H01L33/00C3D2. | |
E33.01 | .... Doped superlattice (e.g., nipi superlattice) (EPO): |
This subclass is indented under subclass E33.008. This subclass is substantially the same in scope as ECLA classification H01L33/00C3D3. | |
E33.011 | ... For current confinement (EPO): |
This subclass is indented under subclass E33.005. This subclass is substantially the same in scope as ECLA classification H01L33/00C3E. | |
E33.012 | ... Multiple active regions between two electrodes (e.g., stacks) (EPO): |
This subclass is indented under subclass E33.005. This subclass is substantially the same in scope as ECLA classification H01L33/00C3F. | |
E33.013 | .. Material of active region (EPO): |
This subclass is indented under subclass E33.002. This subclass is substantially the same in scope as ECLA classification H01L33/00C4. | |
E33.014 | ... In different regions (EPO): |
This subclass is indented under subclass E33.013. This subclass is substantially the same in scope as ECLA classification H01L33/00C4G2. | |
E33.015 | ... Comprising only Group IV element (EPO): |
This subclass is indented under subclass E33.013. This subclass is substantially the same in scope as ECLA classification H01L33/00C4B. | |
E33.016 | .... With heterojunction (EPO): |
This subclass is indented under subclass E33.015. This subclass is substantially the same in scope as ECLA classification H01L33/00C4B2. | |
E33.017 | .... Characterized by doping material (EPO): |
This subclass is indented under subclass E33.015. This subclass is substantially the same in scope as ECLA classification H01L33/00C4B3. | |
E33.018 | .... Including porous Si (EPO): |
This subclass is indented under subclass E33.015. This subclass is substantially the same in scope as ECLA classification H01L33/00C4B4. | |
E33.019 | ... Comprising only Group II-VI compound (EPO): |
This subclass is indented under subclass E33.013. This subclass is substantially the same in scope as ECLA classification H01L33/00C4C. | |
E33.02 | .... Ternary or quaternary compound (e.g., CdHgTe) (EPO): |
This subclass is indented under subclass E33.019. This subclass is substantially the same in scope as ECLA classification H01L33/00C4C2. | |
E33.021 | ..... With heterojunction (EPO): |
This subclass is indented under subclass E33.02. This subclass is substantially the same in scope as ECLA classification H01L33/00C4C2B. | |
E33.022 | .... Characterized by doping material (EPO): |
This subclass is indented under subclass E33.019. This subclass is substantially the same in scope as ECLA classification H01L33/00C4C3. | |
E33.023 | ... Comprising only Group III-V compound (EPO): |
This subclass is indented under subclass E33.013. This subclass is substantially the same in scope as ECLA classification H01L33/00C4D. | |
E33.024 | .... Binary compound (e.g., GaAs) (EPO): |
This subclass is indented under subclass E33.023. This subclass is substantially the same in scope as ECLA classification H01L33/00C4D2. | |
E33.025 | ..... Including nitride (e.g., GaN) (EPO): |
This subclass is indented under subclass E33.024. This subclass is substantially the same in scope as ECLA classification H01L33/00C4D2B. | |
E33.026 | .... Ternary or quaternary compound (e.g., AlGaAs) (EPO): |
This subclass is indented under subclass E33.023. This subclass is substantially the same in scope as ECLA classification H01L33/00C4D3. | |
E33.027 | ..... With heterojunction (EPO): |
This subclass is indented under subclass E33.026. This subclass is substantially the same in scope as ECLA classification H01L33/00C4D3B. | |
E33.028 | ..... Including nitride (e.g., AlGaN) (EPO): |
This subclass is indented under subclass E33.026. This subclass is substantially the same in scope as ECLA classification H01L33/00C4D3C. | |
E33.029 | .... Characterized by doping material (EPO): |
This subclass is indented under subclass E33.023. This subclass is substantially the same in scope as ECLA classification H01L33/00C4D4. | |
E33.03 | ..... Nitride compound (EPO): |
This subclass is indented under subclass E33.029. This subclass is substantially the same in scope as ECLA classification H01L33/00C4D4B. | |
E33.031 | .... Including ternary or quaternary compound (e.g., AlGaAs) (EPO): |
This subclass is indented under subclass E33.023. This subclass is substantially the same in scope as ECLA classification H01L33/00C4D6. | |
E33.032 | ..... With heterojunction (e.g., AlGaAs/GaAs) (EPO): |
This subclass is indented under subclass E33.031. This subclass is substantially the same in scope as ECLA classification H01L33/00C4D6B. | |
E33.033 | ..... Comprising nitride compound (e.g., AlGaN) (EPO): |
This subclass is indented under subclass E33.031. This subclass is substantially the same in scope as ECLA classification H01L33/00C4D6C. | |
E33.034 | ...... With heterojunction (e.g., AlGaN/GaN) (EPO): |
This subclass is indented under subclass E33.033. This subclass is substantially the same in scope as ECLA classification H01L33/00C4D6C2. | |
E33.035 | ... Comprising only Group IV compound (e.g., SiC) (EPO): |
This subclass is indented under subclass E33.013. This subclass is substantially the same in scope as ECLA classification H01L33/00C4E. | |
E33.036 | .... Characterized by doping material (EPO): |
This subclass is indented under subclass E33.035. This subclass is substantially the same in scope as ECLA classification H01L33/00C4E2. | |
E33.037 | ... Comprising compound other than Group II-VI, III-V, and IV compound (EPO): |
This subclass is indented under subclass E33.013. This subclass is substantially the same in scope as ECLA classification H01L33/00C4F. | |
E33.038 | .... Comprising only Group IV-VI compound (EPO): |
This subclass is indented under subclass E33.037. This subclass is substantially the same in scope as ECLA classification H01L33/00C4F2. | |
E33.039 | .... Comprising only Group II-IV-VI compound (EPO): |
This subclass is indented under subclass E33.037. This subclass is substantially the same in scope as ECLA classification H01L33/00C4F3. | |
E33.04 | .... Comprising only Group I-III-VI compound (EPO): |
This subclass is indented under subclass E33.037. This subclass is substantially the same in scope as ECLA classification H01L33/00C4F4. | |
E33.041 | .... Characterized by doping material (EPO): |
This subclass is indented under subclass E33.037. This subclass is substantially the same in scope as ECLA classification H01L33/00C4F5. | |
E33.042 | .... Comprising only Group IV-VI or II-IV-VI compound (EPO): |
This subclass is indented under subclass E33.037. This subclass is substantially the same in scope as ECLA classification H01L33/00C4F6. | |
E33.043 | .. Physical imperfections (e.g., particular concentration or distribution of impurity) (EPO): |
This subclass is indented under subclass E33.002. This subclass is substantially the same in scope as ECLA classification H01L33/00C5. | |
E33.044 | . Device characterized by their operation (EPO): |
This subclass is indented under subclass E33.001. This subclass is substantially the same in scope as ECLA classification H01L33/00D. | |
E33.045 | .. Having p-n or hi-lo junction (EPO): |
This subclass is indented under subclass E33.044. This subclass is substantially the same in scope as ECLA classification H01L33/00D2. | |
E33.046 | ... P-I-N device (EPO): |
This subclass is indented under subclass E33.045. This subclass is substantially the same in scope as ECLA classification H01L33/00D2B. | |
E33.047 | ... Having at least two p-n junctions (EPO): |
This subclass is indented under subclass E33.045. This subclass is substantially the same in scope as ECLA classification H01L33/00D2C. | |
E33.048 | .. Having heterojunction or graded gap (EPO): |
This subclass is indented under subclass E33.044. This subclass is substantially the same in scope as ECLA classification H01L33/00D3. | |
E33.049 | ... Comprising only Group III-V compound (EPO): |
This subclass is indented under subclass E33.048. This subclass is substantially the same in scope as ECLA classification H01L33/00D3B. | |
E33.05 | ... Comprising only Group II-IV compound (EPO): |
This subclass is indented under subclass E33.048. This subclass is substantially the same in scope as ECLA classification H01L33/00D3C. | |
E33.051 | .. Having Schottky barrier (EPO): |
This subclass is indented under subclass E33.044. This subclass is substantially the same in scope as ECLA classification H01L33/00D4. | |
E33.052 | .. Having MIS barrier layer (EPO): |
This subclass is indented under subclass E33.044. This subclass is substantially the same in scope as ECLA classification H01L33/00D5. | |
E33.053 | .. Characterized by field-effect operation (EPO): |
This subclass is indented under subclass E33.044. This subclass is substantially the same in scope as ECLA classification H01L33/00D6. | |
E33.054 | .. Device being superluminescent diode (EPO): |
This subclass is indented under subclass E33.044. This subclass is substantially the same in scope as ECLA classification H01L33/00D7. | |
E33.055 | . Detail of nonsemiconductor component other than light-emitting semiconductor device (EPO): |
This subclass is indented under subclass E33.001. This subclass is substantially the same in scope as ECLA classification H01L33/00B. | |
E33.056 | .. Packaging (EPO): |
This subclass is indented under subclass E33.055. This subclass is substantially the same in scope as ECLA classification H01L33/00B2. | |
E33.057 | ... Adapted for surface mounting (EPO): |
This subclass is indented under subclass E33.056. This subclass is substantially the same in scope as ECLA classification H01L33/00B2B. | |
E33.058 | ... Housing (EPO): |
This subclass is indented under subclass E33.056. This subclass is substantially the same in scope as ECLA classification H01L33/00B2C. | |
E33.059 | ... Encapsulation (EPO): |
This subclass is indented under subclass E33.056. This
subclass is substantially the same in scope as ECLA classification
H01L33/00B2D.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
E33.06 | .. Coatings (EPO): |
This subclass is indented under subclass E33.055. This
subclass is substantially the same in scope as ECLA classification
H01L33/00B3.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E33.061 | ... Comprising luminescent material (e.g., fluorescent) (EPO): |
This subclass is indented under subclass E33.06. This subclass is substantially the same in scope as ECLA classification H01L33/00B3B. | |
E33.062 | .. Electrodes (EPO): |
This subclass is indented under subclass E33.055. This subclass is substantially the same in scope as ECLA classification H01L33/00B4. | |
E33.063 | ... Characterized by material (EPO): |
This subclass is indented under subclass E33.062. This subclass is substantially the same in scope as ECLA classification H01L33/00B4B. | |
E33.064 | .... Comprising transparent conductive layers (e.g., transparent conductive oxides (TCO), indium tin oxide (ITO)) (EPO): |
This subclass is indented under subclass E33.063. This subclass is substantially the same in scope as ECLA classification H01L33/00B4B2. | |
E33.065 | ... Characterized by shape (EPO): |
This subclass is indented under subclass E33.062. This subclass is substantially the same in scope as ECLA classification H01L33/00B4C. | |
E33.066 | .. Electrical contact or lead (e.g., lead frame) (EPO): |
This subclass is indented under subclass E33.055. This subclass is substantially the same in scope as ECLA classification H01L33/00B5. | |
E33.067 | .. Means for light extraction or guiding (EPO): |
This subclass is indented under subclass E33.055. This subclass is substantially the same in scope as ECLA classification H01L33/00B6. | |
E33.068 | ... Integrated with device (e.g., back surface reflector, lens) (EPO): |
This subclass is indented under subclass E33.067. This subclass is substantially the same in scope as ECLA classification H01L33/00B6B. | |
E33.069 | .... Comprising resonant cavity structure (e.g., Bragg reflector pair) (EPO): |
This subclass is indented under subclass E33.068. This subclass is substantially the same in scope as ECLA classification H01L33/00B6B2. | |
E33.07 | .... Comprising window layer (EPO): |
This subclass is indented under subclass E33.068. This subclass is substantially the same in scope as ECLA classification H01L33/00B6B3. | |
E33.071 | ... Not integrated with device (EPO): |
This subclass is indented under subclass E33.067. This subclass is substantially the same in scope as ECLA classification H01L33/00B6C. | |
E33.072 | .... Reflective means (EPO): |
This subclass is indented under subclass E33.071. This subclass is substantially the same in scope as ECLA classification H01L33/00B6C2. | |
E33.073 | .... Refractive means (e.g., lens) (EPO): |
This subclass is indented under subclass E33.071. This subclass is substantially the same in scope as ECLA classification H01L33/00B6C3. | |
E33.074 | ... Scattering means (e.g., surface roughening) (EPO): |
This subclass is indented under subclass E33.067. This subclass is substantially the same in scope as ECLA classification H01L33/00B6D. | |
E33.075 | .. With means for cooling or heating (EPO): |
This subclass is indented under subclass E33.055. This
subclass is substantially the same in scope as ECLA classification
H01L33/00B7.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E33.076 | .. With means for light detecting (e.g., photodetector) (EPO): |
This subclass is indented under subclass E33.055. This subclass is substantially the same in scope as ECLA classification H01L33/00B8. | |
E33.077 | .. Monolithic integration with photosensitive device (EPO): |
This subclass is indented under subclass E33.055. This subclass is substantially the same in scope as ECLA classification H01L33/00B9. | |
E31.001 | Semiconductor devices responsive or sensitive to electromagnetic radiation (e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation, processes or apparatus peculiar to manufacture or treatment of such devices, or of parts thereof) (EPO): |
This main group provides for semiconductor devices that are sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation, and processes or apparatus peculiar to the manufacture or treatment of such devices or of parts thereof. This subclass is substantially the same in scope as ECLA classification H01L31/00. | |
E31.002 | . Characterized by semiconductor body (EPO): |
This subclass is indented under subclass E31.001. This subclass is substantially the same in scope as ECLA classification H01L31/0248. | |
E31.003 | .. Characterized by semiconductor body material (EPO): |
This subclass is indented under subclass E31.002. This subclass is substantially the same in scope as ECLA classification H01L31/0256. | |
E31.004 | ... Inorganic materials (EPO): |
This subclass is indented under subclass E31.003. This subclass is substantially the same in scope as ECLA classification H01L31/0264. | |
E31.005 | .... In different semiconductor regions (e.g., Cu2X/CdX heterojunction and X being Group VI element) (EPO): |
This subclass is indented under subclass E31.004. This subclass is substantially the same in scope as ECLA classification H01L31/0336. | |
E31.006 | ..... Comprising only Cu2X/CdX heterojunction and X being Group VI element (EPO): |
This subclass is indented under subclass E31.005. This subclass is substantially the same in scope as ECLA classification H01L31/0336B. | |
E31.007 | ..... Comprising only heterojunction including Group I-III-VI compound (e.g., CdS/CuInSe2 heterojunction) (EPO): |
This subclass is indented under subclass E31.005. This subclass is substantially the same in scope as ECLA classification H01L31/0336C. | |
E31.008 | .... Selenium or tellurium (EPO): |
This subclass is indented under subclass E31.004. This subclass is substantially the same in scope as ECLA classification H01L31/0272. | |
E31.009 | ..... For device having potential or surface barrier (EPO): |
This subclass is indented under subclass E31.008. This subclass is substantially the same in scope as ECLA classification H01L31/0272B. | |
E31.01 | ..... Characterized by doping material (EPO): |
This subclass is indented under subclass E31.008. This subclass is substantially the same in scope as ECLA classification H01L31/0272C. | |
E31.011 | .... Including, apart from doping material or other impurity, only Group IV element (EPO): |
This subclass is indented under subclass E31.004. This subclass is substantially the same in scope as ECLA classification H01L31/028. | |
E31.012 | ..... For device having potential or surface barrier (EPO): |
This subclass is indented under subclass E31.011. This subclass is substantially the same in scope as ECLA classification H01L31/028B. | |
E31.013 | ..... Comprising porous silicon as part of active layer (EPO): |
This subclass is indented under subclass E31.011. This subclass is substantially the same in scope as ECLA classification H01L31/028P. | |
E31.014 | ..... Characterized by doping material (EPO): |
This subclass is indented under subclass E31.011. This subclass is substantially the same in scope as ECLA classification H01L31/0288. | |
E31.015 | .... Including, apart from doping material or other impurity, only Group II-VI compound (e.g., CdS, ZnS, HgCdTe) (EPO): |
This subclass is indented under subclass E31.004. This subclass is substantially the same in scope as ECLA classification H01L31/0296. | |
E31.016 | ..... For device having potential or surface barrier (EPO): |
This subclass is indented under subclass E31.015. This subclass is substantially the same in scope as ECLA classification H01L31/0296B. | |
E31.017 | ...... Characterized by doping material (EPO): |
This subclass is indented under subclass E31.016. This subclass is substantially the same in scope as ECLA classification H01L31/0296B2. | |
E31.018 | ..... Including ternary compound (e.g., HgCdTe) (EPO): |
This subclass is indented under subclass E31.015. This subclass is substantially the same in scope as ECLA classification H01L31/0296C. | |
E31.019 | .... Including, apart from doping material or other impurity, only Group III-V compound (EPO): |
This subclass is indented under subclass E31.004. This subclass is substantially the same in scope as ECLA classification H01L31/0304. | |
E31.02 | ..... For device having potential or surface barrier (EPO): |
This subclass is indented under subclass E31.019. This subclass is substantially the same in scope as ECLA classification H01L31/0304B. | |
E31.021 | ...... Characterized by doping material GaAlAs, InGaAs, InGaAsP (EPO): |
This subclass is indented under subclass E31.02. This subclass is substantially the same in scope as ECLA classification H01L31/0304B2. | |
E31.022 | ..... Including ternary or quaternary compound (EPO): |
This subclass is indented under subclass E31.019. This subclass is substantially the same in scope as ECLA classification H01L31/0304C. | |
E31.023 | .... Including, apart from doping material or other impurity, only Group IV compound (e.g., SiC) (EPO): |
This subclass is indented under subclass E31.004. This subclass is substantially the same in scope as ECLA classification H01L31/0312. | |
E31.024 | ..... For device having potential or surface barrier (EPO): |
This subclass is indented under subclass E31.023. This subclass is substantially the same in scope as ECLA classification H01L31/0312B. | |
E31.025 | ..... Characterized by doping material (EPO): |
This subclass is indented under subclass E31.023. This subclass is substantially the same in scope as ECLA classification H01L31/0312C. | |
E31.026 | .... Including, apart from doping material or other impurity, only compound other than Group II-VI, III-V, and IV compound (EPO): |
This subclass is indented under subclass E31.004. This subclass is substantially the same in scope as ECLA classification H01L31/032. | |
E31.027 | ..... Comprising only Group I-III-VI chalcopyrite compound (e.g., CuInSe2, CuGaSe2, CuInGaSe2) (EPO): |
This subclass is indented under subclass E31.026. This subclass is substantially the same in scope as ECLA classification H01L31/032C. | |
E31.028 | ...... Characterized by doping material (EPO): |
This subclass is indented under subclass E31.027. This subclass is substantially the same in scope as ECLA classification H01L31/032C2. | |
E31.029 | ..... Comprising only Group IV-VI or II-IV-VI chalcogenide compound (e.g., PbSnTe) (EPO): |
This subclass is indented under subclass E31.026. This subclass is substantially the same in scope as ECLA classification H01L31/032D. | |
E31.03 | ...... Characterized by doping material (EPO): |
This subclass is indented under subclass E31.029. This subclass is substantially the same in scope as ECLA classification H01L31/032D2. | |
E31.031 | ..... Characterized by doping material (EPO): |
This subclass is indented under subclass E31.026. This subclass is substantially the same in scope as ECLA classification H01L31/032B. | |
E31.032 | .. Characterized by semiconductor body shape, relative size, or disposition of semiconductor regions (EPO): |
This subclass is indented under subclass E31.002. This subclass is substantially the same in scope as ECLA classification H01L31/0352. | |
E31.033 | ... Multiple quantum well structure (EPO): |
This subclass is indented under subclass E31.032. This subclass is substantially the same in scope as ECLA classification H01L31/0352B. | |
E31.034 | .... Characterized by amorphous semiconductor layer (EPO): |
This subclass is indented under subclass E31.033. This subclass is substantially the same in scope as ECLA classification H01L31/0352B2. | |
E31.035 | .... Including, apart from doping material or other impurity, only Group IV element or compound (e.g., Si-SiGe superlattice) (EPO): |
This subclass is indented under subclass E31.033. This subclass is substantially the same in scope as ECLA classification H01L31/0352B3. | |
E31.036 | .... Doping superlattice (e.g., nipi superlattice) (EPO): |
This subclass is indented under subclass E31.033. This subclass is substantially the same in scope as ECLA classification H01L31/0352B4. | |
E31.037 | ... For device having potential or surface barrier (EPO): |
This subclass is indented under subclass E31.032. This subclass is substantially the same in scope as ECLA classification H01L31/0352C. | |
E31.038 | .... Shape of body (EPO): |
This subclass is indented under subclass E31.037. This subclass is substantially the same in scope as ECLA classification H01L31/0352C2. | |
E31.039 | .... Shape of potential or surface barrier (EPO): |
This subclass is indented under subclass E31.037. This subclass is substantially the same in scope as ECLA classification H01L31/0352C3. | |
E31.04 | .. Characterized by semiconductor body crystalline structure or plane (EPO): |
This subclass is indented under subclass E31.002. This subclass is substantially the same in scope as ECLA classification H01L31/036. | |
E31.041 | ... Including thin film deposited on metallic or insulating substrate (EPO): |
This subclass is indented under subclass E31.04. This subclass is substantially the same in scope as ECLA classification H01L31/0392. | |
E31.042 | .... Including only Group IV element (EPO): |
This subclass is indented under subclass E31.041. This subclass is substantially the same in scope as ECLA classification H01L31/0392B. | |
E31.043 | ... Including polycrystalline semiconductor (EPO): |
This subclass is indented under subclass E31.04. This subclass is substantially the same in scope as ECLA classification H01L31/0368. | |
E31.044 | .... Including only Group IV element (EPO): |
This subclass is indented under subclass E31.043. This subclass is substantially the same in scope as ECLA classification H01L31/0368B. | |
E31.045 | ..... Including microcrystalline silicon ( c-Si) (EPO): |
This subclass is indented under subclass E31.044. This subclass is substantially the same in scope as ECLA classification H01L31/0368B2. | |
E31.046 | ..... Including microcrystalline Group IV compound (e.g., c-SiGe, c-SiC) (EPO): |
This subclass is indented under subclass E31.044. This subclass is substantially the same in scope as ECLA classification H01L31/0368B3. | |
E31.047 | ... Including amorphous semiconductor (EPO): |
This subclass is indented under subclass E31.04. This subclass is substantially the same in scope as ECLA classification H01L31/0376. | |
E31.048 | .... Including only Group IV element (EPO): |
This subclass is indented under subclass E31.047. This subclass is substantially the same in scope as ECLA classification H01L31/0376B. | |
E31.049 | ..... Including Group IV compound (e.g., SiGe, SiC) (EPO): |
This subclass is indented under subclass E31.048. This subclass is substantially the same in scope as ECLA classification H01L31/0376B2. | |
E31.05 | ..... Having light-induced characteristic variation (e.g., Staebler-Wronski effect) (EPO): |
This subclass is indented under subclass E31.048. This subclass is substantially the same in scope as ECLA classification H01L31/0376B3. | |
E31.051 | ... Including other nonmonocrystalline material (e.g., semiconductor particles embedded in insulating material) (EPO): |
This subclass is indented under subclass E31.04. This subclass is substantially the same in scope as ECLA classification H01L31/0384. | |
E31.052 | . Adapted to control current flow through device (e.g., photoresistor) (EPO): |
This subclass is indented under subclass E31.001. This subclass is substantially the same in scope as ECLA classification H01L31/08. | |
E31.053 | .. For device having potential or surface barrier (e.g., phototransistor) (EPO): |
This subclass is indented under subclass E31.052. This subclass is substantially the same in scope as ECLA classification H01L31/10. | |
E31.054 | ... Device sensitive to infrared, visible, or ultraviolet radiation (EPO): |
This subclass is indented under subclass E31.053. This
subclass is substantially the same in scope as ECLA classification
H01L31/101.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E31.055 | .... Characterized by only one potential or surface barrier (EPO): |
This subclass is indented under subclass E31.054. This subclass is substantially the same in scope as ECLA classification H01L31/102. | |
E31.056 | ..... Potential barrier being of point contact type (EPO): |
This subclass is indented under subclass E31.055. This subclass is substantially the same in scope as ECLA classification H01L31/102B. | |
E31.057 | ..... PN homojunction potential barrier (EPO): |
This subclass is indented under subclass E31.055. This subclass is substantially the same in scope as ECLA classification H01L31/103. | |
E31.058 | ...... Device comprising active layer formed only by Group II-VI compound (e.g., HgCdTe IR photodiode) (EPO): |
This subclass is indented under subclass E31.057. This subclass is substantially the same in scope as ECLA classification H01L31/103B. | |
E31.059 | ...... Device comprising active layer formed only by Group III-V compound (EPO): |
This subclass is indented under subclass E31.057. This subclass is substantially the same in scope as ECLA classification H01L31/103C. | |
E31.06 | ...... Device comprising active layer formed only by Group IV compound (EPO): |
This subclass is indented under subclass E31.057. This subclass is substantially the same in scope as ECLA classification H01L31/103D. | |
E31.061 | ..... PIN potential barrier (EPO): |
This subclass is indented under subclass E31.055. This subclass is substantially the same in scope as ECLA classification H01L31/105. | |
E31.062 | ...... Device comprising Group IV amorphous material (EPO): |
This subclass is indented under subclass E31.061. This subclass is substantially the same in scope as ECLA classification H01L31/105B. | |
E31.063 | ..... Potential barrier working in avalanche mode (e.g., avalanche photodiode) (EPO): |
This subclass is indented under subclass E31.055. This subclass is substantially the same in scope as ECLA classification H01L31/107. | |
E31.064 | ...... Heterostructure (e.g., surface absorption or multiplication (SAM) layer) (EPO): |
This subclass is indented under subclass E31.063. This subclass is substantially the same in scope as ECLA classification H01L31/107B. | |
E31.065 | ..... Schottky potential barrier (EPO): |
This subclass is indented under subclass E31.055. This subclass is substantially the same in scope as ECLA classification H01L31/108. | |
E31.066 | ...... Metal-semiconductor-metal (MSM) Schottky barrier (EPO): |
This subclass is indented under subclass E31.065. This subclass is substantially the same in scope as ECLA classification H01L31/108B. | |
E31.067 | ..... PN heterojunction potential barrier (EPO): |
This subclass is indented under subclass E31.055. This subclass is substantially the same in scope as ECLA classification H01L31/109. | |
E31.068 | .... Characterized by two potential or surface barriers (EPO): |
This subclass is indented under subclass E31.054. This subclass is substantially the same in scope as ECLA classification H01L31/11. | |
E31.069 | ..... Bipolar phototransistor (EPO): |
This subclass is indented under subclass E31.068. This subclass is substantially the same in scope as ECLA classification H01L31/11B. | |
E31.07 | .... Characterized by at least three potential barriers (EPO): |
This subclass is indented under subclass E31.054. This subclass is substantially the same in scope as ECLA classification H01L31/111. | |
E31.071 | ..... Photothyristor (EPO): |
This subclass is indented under subclass E31.07. This subclass is substantially the same in scope as ECLA classification H01L31/111B. | |
E31.072 | ...... Static induction type (i.e., SIT device) (EPO): |
This subclass is indented under subclass E31.071. This subclass is substantially the same in scope as ECLA classification H01L31/111B2. | |
E31.073 | .... Field-effect type (e.g., junction field-effect phototransistor) (EPO): |
This subclass is indented under subclass E31.054. This subclass is substantially the same in scope as ECLA classification H01L31/112. | |
E31.074 | ..... With Schottky gate (EPO): |
This subclass is indented under subclass E31.073. This subclass is substantially the same in scope as ECLA classification H01L31/112B. | |
E31.075 | ...... Charge-coupled device (CCD) (EPO): |
This subclass is indented under subclass E31.074. This subclass is substantially the same in scope as ECLA classification H01L31/112B2. | |
E31.076 | ...... Photo MESFET (EPO): |
This subclass is indented under subclass E31.074. This subclass is substantially the same in scope as ECLA classification H01L31/112B3. | |
E31.077 | ..... With PN homojunction gate (EPO): |
This subclass is indented under subclass E31.073. This subclass is substantially the same in scope as ECLA classification H01L31/112C. | |
E31.078 | ...... Charge-coupled device (CCD) (EPO): |
This subclass is indented under subclass E31.077. This subclass is substantially the same in scope as ECLA classification H01L31/112C2. | |
E31.079 | ...... Field-effect phototransistor (EPO): |
This subclass is indented under subclass E31.077. This subclass is substantially the same in scope as ECLA classification H01L31/112C3. | |
E31.08 | ..... With PN heterojunction gate (EPO): |
This subclass is indented under subclass E31.073. This subclass is substantially the same in scope as ECLA classification H01L31/112D. | |
E31.081 | ...... Charge-coupled device (CCD) (EPO): |
This subclass is indented under subclass E31.08. This subclass is substantially the same in scope as ECLA classification H01L31/112D2. | |
E31.082 | ...... Field-effect phototransistor (EPO): |
This subclass is indented under subclass E31.08. This subclass is substantially the same in scope as ECLA classification H01L31/112D3. | |
E31.083 | ..... Conductor-insulator-semiconductor type (EPO): |
This subclass is indented under subclass E31.073. This subclass is substantially the same in scope as ECLA classification H01L31/113. | |
E31.084 | ...... Diode or charge-coupled device (CCD) (EPO): |
This subclass is indented under subclass E31.083. This subclass is substantially the same in scope as ECLA classification H01L31/113B. | |
E31.085 | ...... Metal-insulator-semiconductor field-effect transistor (EPO): |
This subclass is indented under subclass E31.083. This subclass is substantially the same in scope as ECLA classification H01L31/113C. | |
E31.086 | ... Device sensitive to very short wavelength (e.g., X-ray, gamma-ray, or corpuscular radiation) (EPO): |
This subclass is indented under subclass E31.053. This
subclass is substantially the same in scope as ECLA classification
H01L31/115.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E31.087 | .... Bulk-effect radiation detector (e.g., Ge-Li compensated PIN gamma-ray detector) (EPO): |
This subclass is indented under subclass E31.086. This subclass is substantially the same in scope as ECLA classification H01L31/117. | |
E31.088 | ..... Li-compensated PIN gamma-ray detector (EPO): |
This subclass is indented under subclass E31.087. This subclass is substantially the same in scope as ECLA classification H01L31/117B. | |
E31.089 | .... With surface barrier or shallow PN junction (e.g., surface barrier alpha-particle detector) (EPO): |
This subclass is indented under subclass E31.086. This subclass is substantially the same in scope as ECLA classification H01L31/118. | |
E31.09 | ..... With shallow PN junction (EPO): |
This subclass is indented under subclass E31.089. This subclass is substantially the same in scope as ECLA classification H01L31/118B. | |
E31.091 | .... Field-effect type (e.g., MIS-type detector) (EPO): |
This subclass is indented under subclass E31.086. This subclass is substantially the same in scope as ECLA classification H01L31/119. | |
E31.092 | .. Device being sensitive to very short wavelength (e.g., X-ray, gamma-ray) (EPO): |
This subclass is indented under subclass E31.052. This
subclass is substantially the same in scope as ECLA classification
H01L31/08C.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E31.093 | .. Device sensitive to infrared, visible, or ultraviolet radiation (EPO): |
This subclass is indented under subclass E31.052. This
subclass is substantially the same in scope as ECLA classification
H01L31/09.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E31.094 | ... Comprising amorphous semiconductor (EPO): |
This subclass is indented under subclass E31.093. This subclass is substantially the same in scope as ECLA classification H01L31/09B. | |
E31.095 | . Structurally associated with electric light source (e.g., electroluminescent light source) (EPO): |
This subclass is indented under subclass E31.001. This subclass is substantially the same in scope as ECLA classification H01L31/12. | |
E31.096 | .. Hybrid device containing photosensitive and electroluminescent components within one single body (EPO): |
This subclass is indented under subclass E31.095. This subclass is substantially the same in scope as ECLA classification H01L31/12B. | |
E31.097 | .. Light source controlled by radiation-sensitive semiconductor device (e.g., image converter, image amplifier, image storage device) (EPO): |
This subclass is indented under subclass E31.095. This subclass is substantially the same in scope as ECLA classification H01L31/14. | |
E31.098 | ... Device without potential or surface barrier (EPO): |
This subclass is indented under subclass E31.097. This subclass is substantially the same in scope as ECLA classification H01L31/14B. | |
E31.099 | .... Light source being semiconductor device with potential or surface barrier (e.g., light-emitting diode) (EPO): |
This subclass is indented under subclass E31.098. This subclass is substantially the same in scope as ECLA classification H01L31/14B2. | |
E31.1 | ... Device with potential or surface barrier (EPO): |
This subclass is indented under subclass E31.097. This subclass is substantially the same in scope as ECLA classification H01L31/14C. | |
E31.101 | ... Semiconductor light source and radiation-sensitive semiconductor device both having potential or surface barrier (EPO): |
This subclass is indented under subclass E31.097. This subclass is substantially the same in scope as ECLA classification H01L31/147. | |
E31.102 | .... Formed in or on common substrate (EPO): |
This subclass is indented under subclass E31.101. This subclass is substantially the same in scope as ECLA classification H01L31/153. | |
E31.103 | .. Radiation-sensitive semiconductor device controlled by light source (EPO): |
This subclass is indented under subclass E31.095. This subclass is substantially the same in scope as ECLA classification H01L31/16. | |
E31.104 | ... Radiation-sensitive semiconductor device without potential or surface barrier (e.g., photoresistor) (EPO): |
This subclass is indented under subclass E31.103. This subclass is substantially the same in scope as ECLA classification H01L31/16B. | |
E31.105 | .... Light source being semiconductor device having potential or surface barrier (e.g., light-emitting diode) (EPO): |
This subclass is indented under subclass E31.104. This subclass is substantially the same in scope as ECLA classification H01L31/16B2. | |
E31.106 | .... Optical potentiometer (EPO): |
This subclass is indented under subclass E31.104. This subclass is substantially the same in scope as ECLA classification H01L31/16B4. | |
E31.107 | ... Radiation-sensitive semiconductor device with potential or surface barrier (EPO): |
This subclass is indented under subclass E31.103. This subclass is substantially the same in scope as ECLA classification H01L31/16C. | |
E31.108 | ... Semiconductor light source and radiation-sensitive semiconductor device both having potential or surface barrier (EPO): |
This subclass is indented under subclass E31.103. This subclass is substantially the same in scope as ECLA classification H01L31/167. | |
E31.109 | .... Formed in or on common substrate (EPO): |
This subclass is indented under subclass E31.108. This subclass is substantially the same in scope as ECLA classification H01L31/173. | |
E31.11 | . Detail of nonsemiconductor component of radiation-sensitive semiconductor device (EPO): |
This subclass is indented under subclass E31.001. This subclass is substantially the same in scope as ECLA classification H01L31/02. | |
E31.111 | .. Input/output circuit of device (EPO): |
This subclass is indented under subclass E31.11. This subclass is substantially the same in scope as ECLA classification H01L31/02E. | |
E31.112 | ... For device having potential or surface barrier (EPO): |
This subclass is indented under subclass E31.111. This subclass is substantially the same in scope as ECLA classification H01L31/02E2. | |
E31.113 | .. Circuit arrangement of general character for device (EPO): |
This subclass is indented under subclass E31.11. This subclass is substantially the same in scope as ECLA classification H01L31/02H. | |
E31.114 | ... For device having potential or surface barrier (EPO): |
This subclass is indented under subclass E31.113. This subclass is substantially the same in scope as ECLA classification H01L31/02H2. | |
E31.115 | .... Position-sensitive and lateral-effect photodetector (e.g., quadrant photodiode) (EPO): |
This subclass is indented under subclass E31.114. This subclass is substantially the same in scope as ECLA classification H01L31/02H2C. | |
E31.116 | .... Device working in avalanche mode (EPO): |
This subclass is indented under subclass E31.114. This subclass is substantially the same in scope as ECLA classification H01L31/02H2D. | |
E31.117 | .. Encapsulation (EPO): |
This subclass is indented under subclass E31.11. This
subclass is substantially the same in scope as ECLA classification
H01L31/0203.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
E31.118 | ... For device having potential or surface barrier (EPO): |
This subclass is indented under subclass E31.117. This subclass is substantially the same in scope as ECLA classification H01L31/0203B. | |
E31.119 | .. Coatings (EPO): |
This subclass is indented under subclass E31.11. This
subclass is substantially the same in scope as ECLA classification
H01L31/0216.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E31.12 | ... For device having potential or surface barrier (EPO): |
This subclass is indented under subclass E31.119. This subclass is substantially the same in scope as ECLA classification H01L31/0216B. | |
E31.121 | .... For filtering or shielding light (e.g., multicolor filter for photodetector) (EPO): |
This subclass is indented under subclass E31.12. This subclass is substantially the same in scope as ECLA classification H01L31/0216B2. | |
E31.122 | ..... For shielding light (e.g., light-blocking layer, cold shield for infrared detector) (EPO): |
This subclass is indented under subclass E31.121. This subclass is substantially the same in scope as ECLA classification H01L31/0216B2B. | |
E31.123 | ..... For interference filter (e.g., multilayer dielectric filter) (EPO): |
This subclass is indented under subclass E31.121. This subclass is substantially the same in scope as ECLA classification H01L31/0216B2C. | |
E31.124 | .. Electrode (EPO): |
This subclass is indented under subclass E31.11. This subclass is substantially the same in scope as ECLA classification H01L31/0224. | |
E31.125 | ... For device having potential or surface barrier (EPO): |
This subclass is indented under subclass E31.124. This subclass is substantially the same in scope as ECLA classification H01L31/0224B. | |
E31.126 | ... Transparent conductive layer (e.g., transparent conductive oxide (TCO), indium tin oxide (ITO) layer) (EPO): |
This subclass is indented under subclass E31.124. This subclass is substantially the same in scope as ECLA classification H01L31/0224C. | |
E31.127 | .. Optical element associated with device (EPO): |
This subclass is indented under subclass E31.11. This subclass is substantially the same in scope as ECLA classification H01L31/0232. | |
E31.128 | ... Device having potential or surface barrier (EPO): |
This subclass is indented under subclass E31.127. This subclass is substantially the same in scope as ECLA classification H01L31/0232B. | |
E31.129 | ... Comprising luminescent member (e.g., fluorescent sheet) (EPO): |
This subclass is indented under subclass E31.127. This subclass is substantially the same in scope as ECLA classification H01L31/0232C. | |
E31.13 | .. Texturized surface (EPO): |
This subclass is indented under subclass E31.11. This subclass is substantially the same in scope as ECLA classification H01L31/0236. | |
E31.131 | .. Arrangement for temperature regulation (e.g., cooling, heating, or ventilating) (EPO): |
This subclass is indented under subclass E31.11. This
subclass is substantially the same in scope as ECLA classification
H01L31/024.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E27.001 | DEVICE CONSISTING OF A PLURALITY OF SEMICONDUCTOR OR OTHER SOLID STATE COMPONENTS FORMED IN OR ON A COMMON SUBSTRATE, E.G., INTEGRATED CIRCUIT DEVICE (EPO): |
This main group provides for device which includes a plurality
of semiconductor or other solid state components with specific
structural features related to the device, material, or
layout, and integrated on a common substrate. This
subclass is substantially the same in scope as ECLA classification
H01L27/00.
| |||
E27.002 | . Including bulk negative resistance effect component (EPO): |
This subclass is indented under subclass E27.001. This subclass is substantially the same in scope as ECLA classification H01L27/26. | |
E27.003 | .. Including Gunn-effect device (EPO): |
This subclass is indented under subclass E27.002. This subclass is substantially the same in scope as ECLA classification H01L27/26B. | |
E27.004 | . Including solid state component for rectifying, amplifying, or switching without a potential barrier or surface barrier (EPO): |
This subclass is indented under subclass E27.001. This subclass is substantially the same in scope as ECLA classification H01L27/24. | |
E27.005 | . Including component using galvano-magnetic effects, e.g. Hall effect (EPO): |
This subclass is indented under subclass E27.001. This subclass is substantially the same in scope as ECLA classification H01L27/22. | |
E27.006 | . Including piezo-electric, electro-resistive, or magneto-resistive component (EPO): |
This subclass is indented under subclass E27.001. This subclass is substantially the same in scope as ECLA classification H01L27/20. | |
E27.007 | . Including superconducting component (EPO): |
This subclass is indented under subclass E27.001. This subclass is substantially the same in scope as ECLA classification H01L27/18. | |
E27.008 | . Including thermo-electric or thermo-magnetic component with or without a junction of dissimilar material or thermo-magnetic component (EPO): |
This subclass is indented under subclass E27.001. This subclass is substantially the same in scope as ECLA classification H01L27/16. | |
E27.009 | . Including semiconductor component with at least one potential barrier or surface barrier adapted for rectifying, oscillating, amplifying, or switching, or Including integrated passive circuit elements (EPO): |
This subclass is indented under subclass E27.001. This subclass is substantially the same in scope as ECLA classification H01L27/02. | |
E27.01 | .. With semiconductor substrate only (EPO): |
This subclass is indented under subclass E27.009.
This subclass is substantially the same in scope as ECLA classification
H01L27/04.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
E27.011 | ... Including a plurality of components in a non-repetitive configuration (EPO): |
This subclass is indented under subclass E27.01. This subclass is substantially the same in scope as ECLA classification H01L27/06. | |
E27.012 | .... Made of compound semiconductor material, e.g. III-V material (EPO): |
This subclass is indented under subclass E27.011. This subclass is substantially the same in scope as ECLA classification H01L27/06C. | |
E27.013 | .... Integrated circuit having a two-dimensional layout of components without a common active region (EPO): |
This subclass is indented under subclass E27.011. This subclass is substantially the same in scope as ECLA classification H01L27/06D. | |
E27.014 | ..... Including a field-effect type component (EPO): |
This subclass is indented under subclass E27.013. This subclass is substantially the same in scope as ECLA classification H01L27/06D4. | |
E27.015 | ...... In combination with bipolar transistor (EPO): |
This subclass is indented under subclass E27.014. This subclass is substantially the same in scope as ECLA classification H01L27/06D4T. | |
E27.016 | ...... In combination with diode, resistor, or capacitor (EPO): |
This subclass is indented under subclass E27.014. This subclass is substantially the same in scope as ECLA classification H01L27/06D4V. | |
E27.017 | ...... In combination with bipolar transistor and diode, resistor, or capacitor (EPO): |
This subclass is indented under subclass E27.014. This subclass is substantially the same in scope as ECLA classification H01L27/06D4W. | |
E27.018 | ..... With component other than field-effect type (EPO): |
This subclass is indented under subclass E27.013. This subclass is substantially the same in scope as ECLA classification H01L27/06D6. | |
E27.019 | ...... Bipolar transistor in combination with diode, capacitor, or resistor (EPO): |
This subclass is indented under subclass E27.018. This subclass is substantially the same in scope as ECLA classification H01L27/06D6T. | |
E27.02 | ....... Vertical bipolar transistor in combination with diode, capacitor, or resistor (EPO): |
This subclass is indented under subclass E27.019. This subclass is substantially the same in scope as ECLA classification H01L27/06D6T2. | |
E27.021 | ........ Vertical bipolar transistor in combination with resistor or capacitor only (EPO): |
This subclass is indented under subclass E27.02. This subclass is substantially the same in scope as ECLA classification H01L27/06D6T2B. | |
E27.022 | ........ Vertical bipolar transistor in combination with diode only (EPO): |
This subclass is indented under subclass E27.02. This subclass is substantially the same in scope as ECLA classification H01L27/06D6T2D. | |
E27.023 | ....... Lateral bipolar transistor in combination with diode, capacitor, or resistor (EPO): |
This subclass is indented under subclass E27.019. This subclass is substantially the same in scope as ECLA classification H01L27/06D6T4. | |
E27.024 | ...... Including combination of diode, capacitor, or resistor (EPO): |
This subclass is indented under subclass E27.018. This subclass is substantially the same in scope as ECLA classification H01L27/06D6V. | |
E27.025 | ....... Including combination of capacitor or resistor only (EPO): |
This subclass is indented under subclass E27.024. This subclass is substantially the same in scope as ECLA classification H01L27/06D6V2. | |
E27.026 | .... Integrated circuit having a three-dimensional layout (EPO): |
This subclass is indented under subclass E27.011. This subclass is substantially the same in scope as ECLA classification H01L27/06E. | |
E27.027 | ..... Including components formed on opposite sides of a semiconductor substrate (EPO): |
This subclass is indented under subclass E27.026. This subclass is substantially the same in scope as ECLA classification H01L27/600. | |
E27.028 | .... Including component having an active region in common (EPO): |
This subclass is indented under subclass E27.011. This subclass is substantially the same in scope as ECLA classification H01L27/07. | |
E27.029 | ..... Including component of the field-effect type (EPO): |
This subclass is indented under subclass E27.028.
This subclass is substantially the same in scope as ECLA classification
H01L27/07F.
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| |||||||||||
E27.03 | ...... In combination with bipolar transistor and diode, capacitor, or resistor (EPO): |
This subclass is indented under subclass E27.029. This subclass is substantially the same in scope as ECLA classification H01L27/07F2. | |
E27.031 | ....... In combination with vertical bipolar transistor and diode, capacitor, or resistor (EPO): |
This subclass is indented under subclass E27.03. This subclass is substantially the same in scope as ECLA classification H01L27/07F2B. | |
E27.032 | ....... In combination with lateral bipolar transistor and diode, capacitor, or resistor (EPO): |
This subclass is indented under subclass E27.03. This subclass is substantially the same in scope as ECLA classification H01L27/07F2L. | |
E27.033 | ...... In combination with diode, capacitor, or resistor (EPO): |
This subclass is indented under subclass E27.029. This subclass is substantially the same in scope as ECLA classification H01L27/07F4. | |
E27.034 | ....... In combination with capacitor only (EPO): |
This subclass is indented under subclass E27.033. This subclass is substantially the same in scope as ECLA classification H01L27/07F4C. | |
E27.035 | ....... In combination with resistor only (EPO): |
This subclass is indented under subclass E27.033. This subclass is substantially the same in scope as ECLA classification H01L27/07F4R. | |
E27.036 | ..... With component other than field-effect type (EPO): |
This subclass is indented under subclass E27.028. This subclass is substantially the same in scope as ECLA classification H01L27/07T. | |
E27.037 | ...... Bipolar transistor in combination with diode, capacitor, or resistor (EPO): |
This subclass is indented under subclass E27.036. This subclass is substantially the same in scope as ECLA classification H01L27/07T2. | |
E27.038 | ....... Vertical bipolar transistor in combination with diode, capacitor, or resistor (EPO): |
This subclass is indented under subclass E27.037. This subclass is substantially the same in scope as ECLA classification H01L27/07T2C. | |
E27.039 | ........ Vertical bipolar transistor in combination with diode only (EPO): |
This subclass is indented under subclass E27.038. This subclass is substantially the same in scope as ECLA classification H01L27/07T2C2. | |
E27.04 | ......... With Schottky diode only (EPO): |
This subclass is indented under subclass E27.039. This subclass is substantially the same in scope as ECLA classification H01L27/07T2C2S. | |
E27.041 | ........ Vertical bipolar transistor in combination with resistor only (EPO): |
This subclass is indented under subclass E27.038. This subclass is substantially the same in scope as ECLA classification H01L27/07T2C4. | |
E27.042 | ........ Vertical bipolar transistor in combination with capacitor only (EPO): |
This subclass is indented under subclass E27.038. This subclass is substantially the same in scope as ECLA classification H01L27/07T2C6. | |
E27.043 | ....... Lateral bipolar transistor in combination with diode, capacitor, or resistor (EPO): |
This subclass is indented under subclass E27.037. This subclass is substantially the same in scope as ECLA classification H01L27/07T2L. | |
E27.044 | ...... Including combination of diode, capacitor, or resistor (EPO): |
This subclass is indented under subclass E27.036. This subclass is substantially the same in scope as ECLA classification H01L27/07T5. | |
E27.045 | ....... Combination of capacitor and resistor (EPO): |
This subclass is indented under subclass E27.044. This subclass is substantially the same in scope as ECLA classification H01L27/07T5C. | |
E27.046 | ... Including only semiconductor components of a single kind, e.g., all bipolar transistors, all diodes, or all CMOS (EPO): |
This subclass is indented under subclass E27.01. This subclass is substantially the same in scope as ECLA classification H01L27/08. | |
E27.047 | .... Resistor only (EPO): |
This subclass is indented under subclass E27.046. This subclass is substantially the same in scope as ECLA classification H01L27/08B. | |
E27.048 | .... Capacitor only (EPO): |
This subclass is indented under subclass E27.046. This subclass is substantially the same in scope as ECLA classification H01L27/08C. | |
E27.049 | ..... Varactor diode (EPO): |
This subclass is indented under subclass E27.048. This subclass is substantially the same in scope as ECLA classification H01L27/08C2. | |
E27.05 | ..... Metal-insulated-semiconductor (MIS) diode (EPO): |
This subclass is indented under subclass E27.048. This subclass is substantially the same in scope as ECLA classification H01L27/08C3. | |
E27.051 | .... Diode only (EPO): |
This subclass is indented under subclass E27.046. This subclass is substantially the same in scope as ECLA classification H01L27/08D. | |
E27.052 | .... Thyristor only (EPO): |
This subclass is indented under subclass E27.046. This subclass is substantially the same in scope as ECLA classification H01L27/08U. | |
E27.053 | .... Bipolar component only (EPO): |
This subclass is indented under subclass E27.046. This subclass is substantially the same in scope as ECLA classification H01L27/082. | |
E27.054 | ..... Combination of lateral and vertical transistors only (EPO): |
This subclass is indented under subclass E27.053. This subclass is substantially the same in scope as ECLA classification H01L27/082L. | |
E27.055 | ..... Vertical bipolar transistor only (EPO): |
This subclass is indented under subclass E27.053. This subclass is substantially the same in scope as ECLA classification H01L27/082V. | |
E27.056 | ...... Vertical direct transistor of the same conductivity type having different characteristics, (e.g. Darlington transistor) (EPO): |
This subclass is indented under subclass E27.055. This subclass is substantially the same in scope as ECLA classification H01L27/082V2. | |
E27.057 | ...... Vertical complementary transistor (EPO): |
This subclass is indented under subclass E27.055. This subclass is substantially the same in scope as ECLA classification H01L27/082V4. | |
E27.058 | ...... Combination of direct and inverse vertical transistors (e.g., collector acts as emitter) (EPO): |
This subclass is indented under subclass E27.055. This subclass is substantially the same in scope as ECLA classification H01L27/082V6. | |
E27.059 | .... Including field-effect component only (EPO): |
This subclass is indented under subclass E27.046. This subclass is substantially the same in scope as ECLA classification H01L27/085. | |
E27.06 | ..... Field-effect transistor with insulated gate (EPO): |
This subclass is indented under subclass E27.059. This subclass is substantially the same in scope as ECLA classification H01L27/088. | |
E27.061 | ...... Combination of depletion and enhancement field-effect transistors (EPO): |
This subclass is indented under subclass E27.06. This subclass is substantially the same in scope as ECLA classification H01L27/088D. | |
E27.062 | ...... Complementary MIS (EPO): |
This subclass is indented under subclass E27.06. This subclass is substantially the same in scope as ECLA classification H01L27/092. | |
E27.063 | ....... Means for preventing a parasitic bipolar action between the different transistor regions, e.g. latch-up prevention (EPO): |
This subclass is indented under subclass E27.062. This subclass is substantially the same in scope as ECLA classification H01L27/092B. | |
E27.064 | ....... Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS (EPO): |
This subclass is indented under subclass E27.062. This subclass is substantially the same in scope as ECLA classification H01L27/092D. | |
E27.065 | ....... Including an N-well only in the substrate (EPO): |
This subclass is indented under subclass E27.062. This subclass is substantially the same in scope as ECLA classification H01L27/092N. | |
E27.066 | ....... Including a P-well only in the substrate (EPO): |
This subclass is indented under subclass E27.062. This subclass is substantially the same in scope as ECLA classification H01L27/092P. | |
E27.067 | ....... Including both N- and P-wells in the substrate, e.g. twin-tub (EPO): |
This subclass is indented under subclass E27.062. This subclass is substantially the same in scope as ECLA classification H01L27/092T. | |
E27.068 | ..... Schottky barrier gate field-effect transistor (EPO): |
This subclass is indented under subclass E27.059. This subclass is substantially the same in scope as ECLA classification H01L27/095. | |
E27.069 | ..... PN junction gate field-effect transistor (EPO): |
This subclass is indented under subclass E27.059. This subclass is substantially the same in scope as ECLA classification H01L27/098. | |
E27.07 | ... Including a plurality of individual components in a repetitive configuration (EPO): |
This subclass is indented under subclass E27.01. This subclass is substantially the same in scope as ECLA classification H01L27/10. | |
E27.071 | .... Including resistor or capacitor only (EPO): |
This subclass is indented under subclass E27.07. This subclass is substantially the same in scope as ECLA classification H01L27/10C. | |
E27.072 | .... Including bipolar component (EPO): |
This subclass is indented under subclass E27.07. This subclass is substantially the same in scope as ECLA classification H01L27/102. | |
E27.073 | ..... Including diode only (EPO): |
This subclass is indented under subclass E27.072. This subclass is substantially the same in scope as ECLA classification H01L27/102D. | |
E27.074 | ..... Including bipolar transistor (EPO): |
This subclass is indented under subclass E27.072. This subclass is substantially the same in scope as ECLA classification H01L27/102T. | |
E27.075 | ...... Bipolar dynamic random access memory structure (EPO): |
This subclass is indented under subclass E27.074. This subclass is substantially the same in scope as ECLA classification H01L27/102T2. | |
E27.076 | ...... Array of single bipolar transistors only, e.g. read only memory structure (EPO): |
This subclass is indented under subclass E27.074. This subclass is substantially the same in scope as ECLA classification H01L27/102T4. | |
E27.077 | ...... Static bipolar memory cell structure (EPO): |
This subclass is indented under subclass E27.074. This subclass is substantially the same in scope as ECLA classification H01L27/102T5. | |
E27.078 | ...... Bipolar electrically programmable memory structure (EPO): |
This subclass is indented under subclass E27.074. This subclass is substantially the same in scope as ECLA classification H01L27/102T6. | |
E27.079 | ..... Thyristor (EPO): |
This subclass is indented under subclass E27.072. This subclass is substantially the same in scope as ECLA classification H01L27/102U. | |
E27.08 | ..... Unijunction transistor, i.e., three terminal device with only one p-n junction having a negative resistance region in the I-V characteristic (EPO): |
This subclass is indented under subclass E27.072. This subclass is substantially the same in scope as ECLA classification H01L27/102V. | |
E27.081 | .... Including field-effect component (EPO): |
This subclass is indented under subclass E27.07. This subclass is substantially the same in scope as ECLA classification H01L27/105. | |
E27.082 | ..... Including bucket brigade type charge coupled device (C.C.D) (EPO): |
This subclass is indented under subclass E27.0081. This subclass is substantially the same in scope as ECLA classification H01L27/105B. | |
E27.083 | ..... Including charge coupled device (C.C.D) or charge injection device (C.I.D) (EPO): |
This subclass is indented under subclass E27.0081.
This subclass is substantially the same in scope as ECLA classification
H01L27/105C.
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E27.084 | ..... Dynamic random access memory, DRAM, structure (EPO): |
This subclass is indented under subclass E27.0081. This subclass is substantially the same in scope as ECLA classification H01L27/108. | |
E27.085 | ...... One-transistor memory cell structure, i.e., each memory cell containing only one transistor (EPO): |
This subclass is indented under subclass E27.0084. This subclass is substantially the same in scope as ECLA classification H01L27/108F. | |
E27.086 | ....... Storage electrode stacked over the transistor: |
This subclass is indented under subclass E27.078. This subclass is substantially the same in scope as ECLA classification H01L27/108F2. | |
E27.087 | ........ With bit line higher than capacitor (EPO): |
This subclass is indented under subclass E27.086. This subclass is substantially the same in scope as ECLA classification H01L27/108F2B. | |
E27.088 | ........ With capacitor higher than bit line level (EPO): |
This subclass is indented under subclass E27.086. This subclass is substantially the same in scope as ECLA classification H01L27/108F2C. | |
E27.089 | ........ Storage electrode having multiple wings (EPO): |
This subclass is indented under subclass E27.086. This subclass is substantially the same in scope as ECLA classification H01L27/108F2M. | |
E27.09 | ....... Capacitor extending under the transistor (EPO): |
This subclass is indented under subclass E27.078. This subclass is substantially the same in scope as ECLA classification H01L27/108F4. | |
E27.091 | ....... Transistor in trench (EPO): |
This subclass is indented under subclass E27.078. This subclass is substantially the same in scope as ECLA classification H01L27/108F6. | |
E27.092 | ....... Capacitor in trench (EPO): |
This subclass is indented under subclass E27.078. This subclass is substantially the same in scope as ECLA classification H01L27/108F8. | |
E27.093 | ........ Capacitor extending under or around the transistor (EPO): |
This subclass is indented under subclass E27.092. This subclass is substantially the same in scope as ECLA classification H01L27/108F8E. | |
E27.094 | ........ Having storage electrode extension stacked over the transistor (EPO): |
This subclass is indented under subclass E27.092. This subclass is substantially the same in scope as ECLA classification H01L27/108F8S. | |
E27.095 | ....... Capacitor and transistor in common trench (EPO): |
This subclass is indented under subclass E27.078. This subclass is substantially the same in scope as ECLA classification H01L27/108F10. | |
E27.096 | ........ Vertical transistor (EPO): |
This subclass is indented under subclass E27.095. This subclass is substantially the same in scope as ECLA classification H01L27/108F10V. | |
E27.097 | ...... Peripheral structure (EPO): |
This subclass is indented under subclass E27.083. This subclass is substantially the same in scope as ECLA classification H01L27/108P. | |
E27.098 | ..... Static random access memory, SRAM, structure (EPO): |
This subclass is indented under subclass E27.081. This subclass is substantially the same in scope as ECLA classification H01L27/11. | |
E27.099 | ...... Load element being a MOSFET transistor (EPO): |
OLE_LINK1This subclass is indented under subclass E27.098. This subclass is substantially the same in scope as ECLA classification OLE_LINK1 H01L27/11F. | |
E27.1 | ....... Load element being a thin film transistor (EPO): |
This subclass is indented under subclass E27.099. This subclass is substantially the same in scope as ECLA classification H01L27/11F2. | |
E27.101 | ...... Load element being a resistor (EPO): |
This subclass is indented under subclass E27.098. This subclass is substantially the same in scope as ECLA classification H01L27/11R. | |
E27.102 | ..... Read-only memory, ROM, structure (EPO): |
This subclass is indented under subclass E27.081. This subclass is substantially the same in scope as ECLA classification H01L27/112. | |
E27.103 | ...... Electrically programmable ROM (EPO): |
This subclass is indented under subclass E27.102. This subclass is substantially the same in scope as ECLA classification H01L27/115. | |
E27.104 | ....... Ferroelectric non-volatile memory structure (EPO): |
This subclass is indented under subclass E27.103. This subclass is substantially the same in scope as ECLA classification H01L27/115F. | |
E27.105 | .... Masterslice integrated circuit (EPO): |
This subclass is indented under subclass E27.07.
This subclass is substantially the same in scope as ECLA classification
H01L27/118.
| |||
E27.106 | ..... Using bipolar structure (EPO): |
This subclass is indented under subclass E27.105. This subclass is substantially the same in scope as ECLA classification H01L27/118B. | |
E27.107 | ..... Using field-effect structure (EPO): |
This subclass is indented under subclass E27.105. This subclass is substantially the same in scope as ECLA classification H01L27/118G. | |
E27.108 | ...... CMOS gate array (EPO): |
This subclass is indented under subclass E27.107. This subclass is substantially the same in scope as ECLA classification H01L27/118G4. | |
E27.109 | ..... Using combined field-effect/bipolar structure (EPO): |
This subclass is indented under subclass E27.105. This subclass is substantially the same in scope as ECLA classification H01L27/118M. | |
E27.11 | ..... Input and output buffer/driver (EPO): |
This subclass is indented under subclass E27.105. This subclass is substantially the same in scope as ECLA classification H01L27/118P. | |
E27.111 | .. Substrate comprising other than a semiconductor material, e.g. insulating substrate or layered substrate Including a non-semiconductor layer (EPO): |
This subclass is indented under subclass E27.009. This subclass is substantially the same in scope as ECLA classification H01L27/12. | |
E27.112 | ... Including insulator on semiconductor, e.g. SOI (silicon on insulator) (EPO): |
This subclass is indented under subclass E27.111. This subclass is substantially the same in scope as ECLA classification H01L27/12B. | |
E27.113 | ... Combined with thin-film or thick-film passive component (EPO): |
This subclass is indented under subclass E27.111. This subclass is substantially the same in scope as ECLA classification H01L27/13. | |
E27.114 | . Including only passive thin-film or thick-film elements on a common insulating substrate (EPO): |
This subclass is indented under subclass E27.001. This subclass is substantially the same in scope as ECLA classification H01L27/01. | |
E27.115 | .. Thick-film circuits (EPO): |
This subclass is indented under subclass E27.114. This subclass is substantially the same in scope as ECLA classification H01L27/01B. | |
E27.116 | .. Thin-film circuits (EPO): |
This subclass is indented under subclass E27.114. This subclass is substantially the same in scope as ECLA classification H01L27/01C. | |
E27.117 | . Including organic material in active region: |
This subclass is indented under subclass E27.001. This subclass is substantially the same in scope as ECLA classification H01L27/00C. | |
E27.118 | .. Including semiconductor components sensitive to infrared radiation, light, or electromagnetic radiation of a shorter wavelength (EPO): |
This subclass is indented under subclass E27.117. This subclass is substantially the same in scope as ECLA classification H01L27/00C10. | |
E27.119 | .. Including semiconductor components with at least one potential barrier, surface barrier, or recombination zone adapted for light emission (EPO): |
This subclass is indented under subclass E27.117. This subclass is substantially the same in scope as ECLA classification H01L27/00C20. | |
E27.12 | . Including semiconductor component with at least one potential barrier or surface barrier adapted for light emission structurally associated with controlling devices having a variable impedance and not being light sensitive (EPO): |
This subclass is indented under subclass E27.001. This subclass is substantially the same in scope as ECLA classification H01L27/15. | |
E27.121 | .. In a repetitive configuration (EPO): |
This subclass is indented under subclass E27.12. This subclass is substantially the same in scope as ECLA classification H01L27/15B. | |
E27.122 | . Including active semiconductor component sensitive to infrared radiation, light, or electromagnetic radiation of a shorter wavelength (EPO): |
This subclass is indented under subclass E27.001. This subclass is substantially the same in scope as ECLA classification H01L27/14. | |
E27.123 | .. Energy conversion device (EPO): |
This subclass is indented under subclass E27.123. This subclass is substantially the same in scope as ECLA classification H01L27/142. | |
E27.124 | ... In a repetitive configuration, e.g. planar multi-junction solar cells (EPO): |
This subclass is indented under subclass E27.123. This subclass is substantially the same in scope as ECLA classification H01L27/142R. | |
E27.125 | .... Including only thin film solar cells deposited on a substrate (EPO): |
This subclass is indented under subclass E27.124. This subclass is substantially the same in scope as ECLA classification H01L27/142R2. | |
E27.126 | .... Including multiple vertical junction or V-groove junction solar cells formed in a semiconductor substrate (EPO): |
This subclass is indented under subclass E27.124. This subclass is substantially the same in scope as ECLA classification H01L27/142R3. | |
E27.127 | .. Device controlled by radiation (EPO): |
This subclass is indented under subclass E27.122. This subclass is substantially the same in scope as ECLA classification H01L27/144. | |
E27.128 | ... With at least one potential barrier or surface barrier (EPO): |
This subclass is indented under subclass E27.127. This subclass is substantially the same in scope as ECLA classification H01L27/144B. | |
E27.129 | .... In a repetitive configuration (EPO): |
This subclass is indented under subclass E27.128. This subclass is substantially the same in scope as ECLA classification H01L27/144R. | |
E27.13 | ... Imager Including structural or functional details of the device (EPO): |
This subclass is indented under subclass E27.127. This subclass is substantially the same in scope as ECLA classification H01L27/146. | |
E27.131 | .... Geometry or disposition of pixel-elements, address-lines, or gate-electrodes (EPO): |
This subclass is indented under subclass E27.13. This subclass is substantially the same in scope as ECLA classification H01L27/146A2. | |
E27.132 | .... Pixel-elements with integrated switching, control, storage, or amplification elements (EPO): |
This subclass is indented under subclass E27.13. This subclass is substantially the same in scope as ECLA classification H01L27/146A4. | |
E27.133 | .... Photodiode array or MOS imager (EPO): |
This subclass is indented under subclass E27.13. This subclass is substantially the same in scope as ECLA classification H01L27/146F. | |
E27.134 | ..... Color imager (EPO): |
This subclass is indented under subclass E27.133. This subclass is substantially the same in scope as ECLA classification H01L27/146F2. | |
E27.135 | ...... Multicolor imager having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements (EPO): |
This subclass is indented under subclass E27.134. This subclass is substantially the same in scope as ECLA classification H01L27/146F2M. | |
E27.136 | ..... Infrared imager (EPO): |
This subclass is indented under subclass E27.133. This subclass is substantially the same in scope as ECLA classification H01L27/146F3. | |
E27.137 | ...... Of the hybrid type (e.g., chip-on-chip, bonded substrates) (EPO): |
This subclass is indented under subclass E27.136. This subclass is substantially the same in scope as ECLA classification H01L27/146F3H. | |
E27.138 | ...... Multispectral infrared imager having a stacked pixel-element structure, e.g., npn, npnpn or MQW structures (EPO): |
This subclass is indented under subclass E27.136. This subclass is substantially the same in scope as ECLA classification H01L27/146F3M. | |
E27.139 | ..... Anti-blooming (EPO): |
This subclass is indented under subclass E27.133.
This subclass is substantially the same in scope as ECLA classification
H01L27/146F4.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
E27.14 | ..... X-ray, gamma-ray, or high energy radiation imager (measuring X-, gamma- or corpuscular radiation) (EPO): |
This subclass is indented under subclass E27.133. This subclass is substantially the same in scope as ECLA classification H01L27/146F5. | |
E27.141 | .... Imager using a photoconductor layer (e.g., single photoconductor layer for all pixels) (EPO): |
This subclass is indented under subclass E27.13. This subclass is substantially the same in scope as ECLA classification H01L27/146P. | |
E27.142 | ..... Color imager (EPO): |
This subclass is indented under subclass E27.141. This subclass is substantially the same in scope as ECLA classification H01L27/146P2. | |
E27.143 | ..... Infrared imager (EPO): |
This subclass is indented under subclass E27.141. This subclass is substantially the same in scope as ECLA classification H01L27/146P3. | |
E27.144 | ...... Of the hybrid type (e.g., chip-on-chip, bonded substrates) (EPO): |
This subclass is indented under subclass E27.143. This subclass is substantially the same in scope as ECLA classification H01L27/146P3H. | |
E27.145 | ..... Anti-blooming (EPO): |
This subclass is indented under subclass E27.141. This subclass is substantially the same in scope as ECLA classification H01L27/146P4. | |
E27.146 | ..... X-ray, gamma-ray, or high energy radiation imagers (EPO): |
This subclass is indented under subclass E27.141. This subclass is substantially the same in scope as ECLA classification H01L27/146P5. | |
E27.147 | .... Contact-type imager (e.g., contacts document surface) (EPO): |
This subclass is indented under subclass E27.13. This subclass is substantially the same in scope as ECLA classification H01L27/146R. | |
E27.148 | .... Junction field effect transistor (JFET) imager or static induction transistor (SIT) imager (EPO): |
This subclass is indented under subclass E27.13. This subclass is substantially the same in scope as ECLA classification H01L27/146S. | |
E27.149 | .... Bipolar transistor imager (EPO): |
This subclass is indented under subclass E27.13. This subclass is substantially the same in scope as ECLA classification H01L27/146T. | |
E27.15 | .... Charge coupled imager (EPO): |
This subclass is indented under subclass E27.13.
This subclass is substantially the same in scope as ECLA classification
H01L27/148.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E27.151 | ..... Structural or functional details (EPO): |
This subclass is indented under subclass E27.15. This subclass is substantially the same in scope as ECLA classification H01L27/148A. | |
E27.152 | ...... Geometry or disposition of pixel-elements, address lines or gate-electrodes (EPO): |
This subclass is indented under subclass E27.151. This subclass is substantially the same in scope as ECLA classification H01L27/148A2. | |
E27.153 | ..... Linear CCD imager (EPO): |
This subclass is indented under subclass E27.15. This subclass is substantially the same in scope as ECLA classification H01L27/148B. | |
E27.154 | ..... Area CCD imager (EPO): |
This subclass is indented under subclass E27.15. This subclass is substantially the same in scope as ECLA classification H01L27/148C. | |
E27.155 | ...... Frame-interline transfer (EPO): |
This subclass is indented under subclass E27.154. This subclass is substantially the same in scope as ECLA classification H01L27/148C2. | |
E27.156 | ...... Interline transfer (EPO): |
This subclass is indented under subclass E27.154. This subclass is substantially the same in scope as ECLA classification H01L27/148C4. | |
E27.157 | ...... Frame transfer (EPO): |
This subclass is indented under subclass E27.154. This subclass is substantially the same in scope as ECLA classification H01L27/148C6. | |
E27.158 | ..... Charge injection device (CID) imager (EPO): |
This subclass is indented under subclass E27.15. This subclass is substantially the same in scope as ECLA classification H01L27/148D. | |
E27.159 | ..... CCD or CID color imager (EPO): |
This subclass is indented under subclass E27.15. This subclass is substantially the same in scope as ECLA classification H01L27/148F. | |
E27.16 | ..... Infrared CCD or CID imager (EPO): |
This subclass is indented under subclass E27.15. This subclass is substantially the same in scope as ECLA classification H01L27/148J. | |
E27.161 | ...... Of the hybrid type (e.g., chip-on-chip, bonded substrates) (EPO): |
This subclass is indented under subclass E27.16. This subclass is substantially the same in scope as ECLA classification H01L27/148J2. | |
E27.162 | ..... Anti-blooming (EPO): |
This subclass is indented under subclass E27.15. This subclass is substantially the same in scope as ECLA classification H01L27/148M. | |
E27.163 | ..... Including a photoconductive layer deposited on the CCD structure (EPO): |
This subclass is indented under subclass E27.15. This subclass is substantially the same in scope as ECLA classification H01L27/148P. | |
E29.001 | Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (EPO): |
This main group provides for semiconductor devices which
operate by the movement of charge carriers, i.e. electrons
and holes, from one energy level to another within the
semiconductor material and can modify an input voltage to achieve
rectification, amplification, oscillation or switching
action, or capacitors or resistors with at least one potential-jump
barrier or surface barrier. This subclass is substantially
the same in scope as ECLA classification H01L29/00.
| |||
E29.002 | . Electrical characteristics due to properties of entire semiconductor body rather than just surface region (EPO): |
This subclass is indented under subclass E29.001. This subclass is substantially the same in scope as ECLA classification H01L29/02. | |
E29.003 | .. Characterized by their crystalline structure (e.g., polycrystalline, cubic) particular orientation of crystalline planes (EPO): |
This subclass is indented under subclass E29.002.
This subclass is substantially the same in scope as ECLA classification
H01L29/04.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.004 | ... With specified crystalline planes or axis (EPO): |
This subclass is indented under subclass E29.003. This subclass is substantially the same in scope as ECLA classification H01L29/04B. | |
E29.005 | .. Characterized by specified shape or size of PN junction or by specified impurity concentration gradient within the device (EPO): |
This subclass is indented under subclass E29.002. This subclass is substantially the same in scope as ECLA classification H01L29/06. | |
E29.006 | ... Characterized by particular design considerations to control electrical field effect within device (EPO): |
This subclass is indented under subclass E29.005.
This subclass is substantially the same in scope as ECLA classification
H01L29/06B.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.007 | .... For controlling surface leakage or electric field concentration (EPO): |
This subclass is indented under subclass E29/006. This subclass is substantially the same in scope as ECLA classification H01L29/06B2. | |
E29.008 | ..... For controlling breakdown voltage of reverse biased devices (EPO): |
This subclass is indented under subclass E29.007. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B. | |
E29.009 | ...... With field relief electrode (field plate) (EPO): |
This subclass is indented under subclass E29.008. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B2. | |
E29.01 | ....... With at least two field relief electrodes used in combination and not electrically interconnected (EPO): |
This subclass is indented under subclass E29.009. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B2C. | |
E29.011 | ........ With one or more field relief electrode comprising resistance material (e.g., semi insulating material, lightly doped poly-silicon) (EPO): |
This subclass is indented under subclass E29.01. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B2C2. | |
E29.012 | ...... By doping profile or shape or arrangement of the PN junction, or with supplementary regions (e.g., guard ring, LDD, drift region) (EPO): |
This subclass is indented under subclass E29.008. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B3. | |
E29.013 | ....... With supplementary region doped oppositely to or in rectifying contact with semiconductor containing or contacting region(e.g., guard rings with PN or Schottky junction) (EPO): |
This subclass is indented under subclass E29.012. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B3B. | |
E29.014 | ....... With breakdown supporting region for localizing breakdown or limiting its voltage (EPO): |
This subclass is indented under subclass E29.012. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B3C. | |
E29.015 | ...... With insulating layer characterized by dielectric or electrostatic property (e.g., including fixed charge or semi-insulating surface layer) (EPO): |
This subclass is indented under subclass E29.008. This subclass is substantially the same in scope as ECLA classification H01L29/06B2B4. | |
E29.016 | ..... For preventing surface leakage due to surface inversion layer (e.g., channel stop) (EPO): |
This subclass is indented under subclass E29.007. This subclass is substantially the same in scope as ECLA classification H01L29/06B2C. | |
E29.017 | ...... With field relief electrodes acting on insulator potential or insulator charges (EPO): |
This subclass is indented under subclass E29.016.
This subclass is substantially the same in scope as ECLA classification
H01L29/06B2C2.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.018 | .... Comprising internal isolation within devices or components (EPO): |
This subclass is indented under subclass E29.006. This subclass is substantially the same in scope as ECLA classification H01L29/06B3. | |
E29.019 | ..... Isolation by PN junctions (EPO): |
This subclass is indented under subclass E29.018. This subclass is substantially the same in scope as ECLA classification H01L29/06B3B. | |
E29.02 | ..... Isolation by dielectric regions (EPO): |
This subclass is indented under subclass E29.018. This subclass is substantially the same in scope as ECLA classification H01L29/06B3C. | |
E29.021 | ...... For source or drain region of field-effect device (EPO): |
This subclass is indented under subclass E29.02. This subclass is substantially the same in scope as ECLA classification H01L29/06B3C2. | |
E29.022 | ... Characterized by shape of semiconductor body (EPO): |
This subclass is indented under subclass E29.005. This subclass is substantially the same in scope as ECLA classification H01L29/06C. | |
E29.023 | .... Adapted for altering junction breakdown voltage by shape of semiconductor body (EPO): |
This subclass is indented under subclass E29.022. This subclass is substantially the same in scope as ECLA classification H01L29/06C4. | |
E29.024 | ... Characterized by shape, relative sizes or dispositions of semiconductor regions or junctions between regions (EPO): |
This subclass is indented under subclass E29.005. This subclass is substantially the same in scope as ECLA classification H01L29/06D. | |
E29.025 | .... Characterized by particular shape of junction between semiconductor regions (EPO): |
This subclass is indented under subclass E29.024. This subclass is substantially the same in scope as ECLA classification H01L29/06D2. | |
E29.026 | .... Surface layout of device (EPO): |
This subclass is indented under subclass E29.024.
This subclass is substantially the same in scope as ECLA classification
H01L29/06D3.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.027 | ..... Surface layout of MOS gated device (e.g., DMOSFET or IGBT) (EPO): |
This subclass is indented under subclass E29.026. This subclass is substantially the same in scope as ECLA classification H01L29/06D3B. | |
E29.028 | ...... With a nonplanar gate structure (EPO): |
This subclass is indented under subclass E29.027. This subclass is substantially the same in scope as ECLA classification H01L29/06D3B2. | |
E29.029 | ... With semiconductor regions connected to electrode carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (EPO): |
This subclass is indented under subclass E29.005. This subclass is substantially the same in scope as ECLA classification H01L29/08. | |
E29.03 | .... Emitter regions of bipolar transistors (EPO): |
This subclass is indented under subclass E29.029. This subclass is substantially the same in scope as ECLA classification H01L29/08B. | |
E29.031 | ..... Of lateral transistors (EPO): |
This subclass is indented under subclass E29.03. This subclass is substantially the same in scope as ECLA classification H01L29/ 08B2. | |
E29.032 | ..... Noninterconnected multiemitter structures (EPO): |
This subclass is indented under subclass E29.03. This subclass is substantially the same in scope as ECLA classification H01L29/08B5. | |
E29.033 | ..... Of heterojunction bipolar transistors (EPO): |
This subclass is indented under subclass E29.03. This subclass is substantially the same in scope as ECLA classification H01L29/08B7. | |
E29.034 | .... Collector regions of bipolar transistors (EPO): |
This subclass is indented under subclass E29.029. This subclass is substantially the same in scope as ECLA classification H01L29/08C. | |
E29.035 | ..... Pedestal collectors (EPO): |
This subclass is indented under subclass E29.034. This subclass is substantially the same in scope as ECLA classification H01L29/08C2. | |
E29.036 | .... Anode or cathode regions of thyristors or gated bipolar-mode devices (EPO): |
This subclass is indented under subclass E29.029. This subclass is substantially the same in scope as ECLA classification H01L29/08D. | |
E29.037 | ..... Anode regions of thyristors or gated bipolar-mode devices (EPO): |
This subclass is indented under subclass E29.036. This subclass is substantially the same in scope as ECLA classification H01L29/08D2. | |
E29.038 | ..... Cathode regions of thyristors (EPO): |
This subclass is indented under subclass E29.036. This subclass is substantially the same in scope as ECLA classification H01L29/08D3. | |
E29.039 | .... Source or drain regions of field-effect devices (EPO): |
This subclass is indented under subclass E29.029. This subclass is substantially the same in scope as ECLA classification H01L29/08E. | |
E29.04 | ..... Of field-effect transistors with insulated gate (EPO): |
This subclass is indented under subclass E29.039.
This subclass is substantially the same in scope as ECLA classification
H01L29/08E2.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||||
E29.041 | ..... Of field-effect transistors with Schottky gate (EPO): |
This subclass is indented under subclass E29.039. This subclass is substantially the same in scope as ECLA classification H01L29/08E3. | |
E29.042 | .... Tunneling barrier (EPO): |
This subclass is indented under subclass E29.029. This subclass is substantially the same in scope as ECLA classification H01L29/08T. | |
E29.043 | ... With semiconductor regions connected to electrode not carrying current to be rectified, amplified or switched and such electrode being part of semiconductor device which comprises three or more electrodes (EPO): |
This subclass is indented under subclass E29.005. This subclass is substantially the same in scope as ECLA classification H01L29/10. | |
E29.044 | .... Base region of bipolar transistors (EPO): |
This subclass is indented under subclass E29.043. This subclass is substantially the same in scope as ECLA classification H01L29/10B. | |
E29.045 | ..... Of lateral transistors (EPO): |
This subclass is indented under subclass E29.044. This subclass is substantially the same in scope as ECLA classification H01L29/10B2. | |
E29.046 | .... Base regions of thyristors (EPO): |
This subclass is indented under subclass E29.043. This subclass is substantially the same in scope as ECLA classification H01L29/10C. | |
E29.047 | ..... Anode base regions of thyristors (EPO): |
This subclass is indented under subclass E29.046. This subclass is substantially the same in scope as ECLA classification H01L29/10C2. | |
E29.048 | ..... Cathode base regions of thyristors (EPO): |
This subclass is indented under subclass E29.046. This subclass is substantially the same in scope as ECLA classification H01L29/10C3. | |
E29.049 | .... Channel region of field-effect devices (EPO): |
This subclass is indented under subclass E29.043. This subclass is substantially the same in scope as ECLA classification H01L29/10D. | |
E29.05 | ..... Of field-effect transistors (EPO): |
This subclass is indented under subclass E29.049. This subclass is substantially the same in scope as ECLA classification H01L29/10D2. | |
E29.051 | ...... With insulated gate (EPO): |
This subclass is indented under subclass E29.05.
This subclass is substantially the same in scope as ECLA classification
H01L29//10D2B.
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| |||||
E29.052 | ....... Nonplanar channel (EPO): |
This subclass is indented under subclass E29.051.
This subclass is substantially the same in scope as ECLA classification
H01L29/10D2B1.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.053 | ....... With nonuniform doping structure in channel region surface (EPO): |
This subclass is indented under subclass E29.051. This subclass is substantially the same in scope as ECLA classification H01L29/10D2B2. | |
E29.054 | ........ Doping structure being parallel to channel length (EPO): |
This subclass is indented under subclass E29.053. This subclass is substantially the same in scope as ECLA classification H01L29/10D2B2B. | |
E29.055 | ....... With vertical doping variation (EPO): |
This subclass is indented under subclass E29.051. This subclass is substantially the same in scope as ECLA classification H01L29/10D2B3. | |
E29.056 | ....... With variation of composition of channel (EPO): |
This subclass is indented under subclass E29.051. This subclass is substantially the same in scope as ECLA classification H01L29/10D2B4. | |
E29.057 | ...... With PN junction gate: |
This subclass is indented under subclass E29.05. This subclass is substantially the same in scope as ECLA classification H01L29/10D2C. | |
E29.058 | ..... Of charge coupled devices (EPO): |
This subclass is indented under subclass E29.049. This subclass is substantially the same in scope as ECLA classification H01L29/10D3. | |
E29.059 | .... Gate region of field-effect devices with PN junction gate (EPO): |
This subclass is indented under subclass E29.043. This subclass is substantially the same in scope as ECLA classification H01L29/10E. | |
E29.06 | .... Substrate region of field-effect devices (EPO): |
This subclass is indented under subclass E29.043. This subclass is substantially the same in scope as ECLA classification H01L29/10F. | |
E29.061 | ..... Of field-effect transistors (EPO): |
This subclass is indented under subclass E29.06. This subclass is substantially the same in scope as ECLA classification H01L29/10F2. | |
E29.062 | ...... With insulated gate (EPO): |
This subclass is indented under subclass E29.061. This subclass is substantially the same in scope as ECLA classification H01L29/10F2B. | |
E29.063 | ....... With inactive supplementary region (e.g., for preventing punch-through, improving capacity effect or leakage current) (EPO): |
This subclass is indented under subclass E29.062. This subclass is substantially the same in scope as ECLA classification H01L29/10F2B2. | |
E29.064 | ....... Characterized by contact structure of substrate region (EPO): |
This subclass is indented under subclass E29.062. This subclass is substantially the same in scope as ECLA classification H01L29/10F2B3. | |
E29.065 | ..... Of charge coupled devices (EPO): |
This subclass is indented under subclass E29.06. This subclass is substantially the same in scope as ECLA classification H01L29/10F3. | |
E29.066 | .... Body region structure of IGFET"s with channel containing layer (DMOSFET or IGBT) (EPO): |
This subclass is indented under subclass E29.043. This subclass is substantially the same in scope as ECLA classification H01L29/10G. | |
E29.067 | ..... With nonplanar gate structure (EPO): |
This subclass is indented under subclass E29.066. This subclass is substantially the same in scope as ECLA classification H01L29/10G2. | |
E29.068 | .. Characterized by materials of semiconductor body (EPO): |
This subclass is indented under subclass E29.002. This subclass is substantially the same in scope as ECLA classification H01L29/12. | |
E29.069 | ... Single quantum well structures (EPO): |
This subclass is indented under subclass E29.068.
This subclass is substantially the same in scope as ECLA classification
H01L29/12W.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.07 | .... Quantum wire structures (EPO): |
This subclass is indented under subclass E29.069. This subclass is substantially the same in scope as ECLA classification H01L29/12W2. | |
E29.071 | .... Quantum box or quantum dot structures (EPO): |
This subclass is indented under subclass E29.069. This subclass is substantially the same in scope as ECLA classification H01L29/12W4. | |
E29.072 | ... Structures with periodic or quasi-periodic potential variation, (e.g., multiple quantum wells, superlattices) (EPO): |
This subclass is indented under subclass E29.068.
This subclass is substantially the same in scope as ECLA classification
H01L29/15.
OTHER CLASSIFICATION SYSTEMS:
| |||||||||||||
E29.073 | .... Doping structures (e.g., doping superlattices, nipi-superlattices) (EPO): |
This subclass is indented under subclass E29.072.
This subclass is substantially the same in scope as ECLA classification
H01L29/15C.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.074 | .... Structures without potential periodicity in direction perpendicular to major surface of substrate (e.g., lateral superlattice) (EPO): |
This subclass is indented under subclass E29.072. This subclass is substantially the same in scope as ECLA classification H01L29/15D. | |
E29.075 | .... Compositional structures (EPO): |
This subclass is indented under subclass E29.072. This subclass is substantially the same in scope as ECLA classification H01L29/15B. | |
E29.076 | ..... With layered structures with quantum effects in vertical direction (EPO): |
This subclass is indented under subclass E29.075. This subclass is substantially the same in scope as ECLA classification H01L29/15B2. | |
E29.077 | ...... Comprising at least one long-range structurally disordered material (e.g., one-dimensional vertical amorphous superlattices) (EPO): |
This subclass is indented under subclass E29.076. This subclass is substantially the same in scope as ECLA classification H01L29/15B2B. | |
E29.078 | ...... Comprising only semiconductor materials (EPO): |
This subclass is indented under subclass E 29.076. This subclass is substantially the same in scope as ECLA classification H01L29/15B2C. | |
E29.079 | ... Two or more elements from two or more groups of Periodic Table of elements (e.g., alloys) (EPO): |
This subclass is indented under subclass E29.068. This subclass is substantially the same in scope as ECLA classification H01L29/26. | |
E29.08 | .... Amorphous materials (EPO): |
This subclass is indented under subclass E29.79. This subclass is substantially the same in scope as ECLA classification H01L29/26E. | |
E29.081 | .... In different semiconductor regions (e.g., heterojunctions) (EPO): |
This subclass is indented under subclass E29.079. This subclass is substantially the same in scope as ECLA classification H01L29/267. | |
E29.082 | ... Only element from fourth group of Periodic System in uncombined form (EPO): |
This subclass is indented under subclass E29.068.
This subclass is substantially the same in scope as ECLA classification
H01L29/16.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.083 | .... Amorphous materials (EPO): |
This subclass is indented under subclass E29.082. This subclass is substantially the same in scope as ECLA classification H01L29/16E. | |
E29.084 | .... Including two or more of elements from fourth group of Periodic System (EPO): |
This subclass is indented under subclass E29.082. This subclass is substantially the same in scope as ECLA classification H01L29/161. | |
E29.085 | ..... In different semiconductor regions (e.g., heterojunctions) (EPO): |
This subclass is indented under subclass E29.084. This subclass is substantially the same in scope as ECLA classification H01L29/165. | |
E29.086 | .... Further characterized by doping material (EPO): |
This subclass is indented under subclass E29.082. This subclass is substantially the same in scope as ECLA classification H01L29/167. | |
E29.087 | ... Selenium or tellurium only (EPO): |
This subclass is indented under subclass E29.068. This subclass is substantially the same in scope as ECLA classification H01L29/18. | |
E29.088 | .... Amorphous materials (EPO): |
This subclass is indented under subclass E29.087. This subclass is substantially the same in scope as ECLA classification H01L29/18E. | |
E29.089 | ... Only Group III-V compounds (EPO): |
This subclass is indented under subclass E29.068. This subclass is substantially the same in scope as ECLA classification H01L29/20. | |
E29.09 | .... Including two or more compounds (e.g., alloys) (EPO): |
This subclass is indented under subclass E29.089. This subclass is substantially the same in scope as ECLA classification H01L29/201. | |
E29.091 | ..... In different semiconductor regions (e.g., heterojunctions) (EPO): |
This subclass is indented under subclass E29.09. This subclass is substantially the same in scope as ECLA classification H01L29/205. | |
E29.092 | .... Amorphous materials (EPO): |
This subclass is indented under subclass E29.089. This subclass is substantially the same in scope as ECLA classification H01L29/20E. | |
E29.093 | .... Further characterized by doping material (EPO): |
This subclass is indented under subclass E29.089. This subclass is substantially the same in scope as ECLA classification H01L29/207. | |
E29.094 | ... Only Group II-VI compounds (EPO): |
This subclass is indented under subclass E29.068. This subclass is substantially the same in scope as ECLA classification H01L29/22. | |
E29.095 | .... Amorphous materials (EPO): |
This subclass is indented under subclass E29.094. This subclass is substantially the same in scope as ECLA classification H01L29/22E. | |
E29.096 | .... Including two or more compounds (e.g., alloys) (EPO): |
This subclass is indented under subclass E29.094. This subclass is substantially the same in scope as ECLA classification H01L29/221. | |
E29.097 | ..... In different semiconductor regions (e.g., heterojunctions) (EPO): |
This subclass is indented under subclass E29.096. This subclass is substantially the same in scope as ECLA classification H01L29/225. | |
E29.098 | .... Further characterized by doping material (EPO): |
This subclass is indented under subclass E29.094. This subclass is substantially the same in scope as ECLA classification H01L29/227. | |
E29.099 | .... CdX compounds being one element of sixth group of Periodic System (EPO): |
This subclass is indented under subclass E29.094. This subclass is substantially the same in scope as ECLA classification H01L29/22B. | |
E29.1 | ... Semiconductor materials other than Group IV, selenium, tellurium, or Group III-V compounds (EPO): |
This subclass is indented under subclass E29.068. This subclass is substantially the same in scope as ECLA classification H01L29/24. | |
E29.101 | .... Amorphous materials (EPO): |
This subclass is indented under subclass E29.1. This subclass is substantially the same in scope as ECLA classification H01L29/24E. | |
E29.102 | .... Group I-VI or I-VII compounds (e.g., Cu2O, CuI) (EPO): |
This subclass is indented under subclass E29.1. This subclass is substantially the same in scope as ECLA classification H01L29/24B. | |
E29.103 | .... Pb compounds (e.g., PbO) (EPO): |
This subclass is indented under subclass E29.1. This subclass is substantially the same in scope as ECLA classification H01L29/24C. | |
E29.104 | .... Si compounds (e.g., SiC) (EPO): |
This subclass is indented under subclass E29.1. This subclass is substantially the same in scope as ECLA classification H01L29/24D. | |
E29.105 | .. Characterized by combinations of two or more features of crystalline structure, shape, materials, physical imperfections, and concentration/distribution of impurities in bulk material (EPO): |
This subclass is indented under subclass E29.002. This subclass is substantially the same in scope as ECLA classification H01L29/38. | |
E29.106 | .. Characterized by physical imperfections; having polished or roughened surface (EPO): |
This subclass is indented under subclass E29.002. This subclass is substantially the same in scope as ECLA classification H01L29/30. | |
E29.107 | ... Imperfections within semiconductor body (EPO): |
This subclass is indented under subclass E29.106. This subclass is substantially the same in scope as ECLA classification H01L29/32. | |
E29.108 | ... Imperfections on surface of semiconductor body (EPO): |
This subclass is indented under subclass E29.106. This subclass is substantially the same in scope as ECLA classification H01L29/34. | |
E29.109 | .. Characterized by concentration or distribution of impurities in bulk material (EPO): |
This subclass is indented under subclass E29.002.
This subclass is substantially the same in scope as ECLA classification
H01L29/36.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.11 | ... Planar doping (e.g., atomic-plane doping, delta-doping) (EPO): |
This subclass is indented under subclass E29.109. This subclass is substantially the same in scope as ECLA classification H01L29/36D. | |
E29.111 | . Electrodes (EPO): |
This subclass is indented under subclass E29.001. This subclass is substantially the same in scope as ECLA classification H01L29/40. | |
E29.112 | .. Characterized by their shape, relative sizes or dispositions (EPO): |
This subclass is indented under subclass E29.111. This subclass is substantially the same in scope as ECLA classification H01L29/41. | |
E29.113 | ... Carrying current to be rectified, amplified or switched (EPO): |
This subclass is indented under subclass E29.112. This subclass is substantially the same in scope as ECLA classification H01L29/417. | |
E29.114 | .... Emitter or collector electrodes for bipolar transistors (EPO): |
This subclass is indented under subclass E29.113. This subclass is substantially the same in scope as ECLA classification H01L29/417B. | |
E29.115 | .... Cathode or anode electrodes for thyristors (EPO): |
This subclass is indented under subclass E29.113. This subclass is substantially the same in scope as ECLA classification H01L29/417C. | |
E29.116 | .... Source or drain electrodes for field-effect devices (EPO): |
This subclass is indented under subclass E29.113.
This subclass is substantially the same in scope as ECLA classification
H01L29/417D.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.117 | ..... For thin film transistors with insulated gate (EPO): |
This subclass is indented under subclass E29.116. This subclass is substantially the same in scope as ECLA classification H01L29/417D2. | |
E29.118 | ..... For vertical current flow (EPO): |
This subclass is indented under subclass E29.116. This subclass is substantially the same in scope as ECLA classification H01L29/417D4. | |
E29.119 | ..... For lateral devices where connection to source or drain region is done through at least one part of semiconductor substrate thickness (e.g., with connecting sink or with via-hole) (EPO): |
This subclass is indented under subclass E29.116. This subclass is substantially the same in scope as ECLA classification H01L29/417D6. | |
E29.12 | ..... Layout configuration for lateral device source or drain region (e.g., cellular, interdigitated or ring structure or being curved or angular) (EPO): |
This subclass is indented under subclass E29.116. This subclass is substantially the same in scope as ECLA classification H01L29/417D8. | |
E29.121 | ..... Source or drain electrode in groove (EPO): |
This subclass is indented under subclass E29.116. This subclass is substantially the same in scope as ECLA classification H01L29/417D10. | |
E29.122 | ..... Characterized by relative position of source or drain electrode and gate electrode (EPO): |
This subclass is indented under subclass E29.116. This subclass is substantially the same in scope as ECLA classification H01L29/417D12. | |
E29.123 | ... Not carrying current to be rectified, amplified, or switched (EPO): |
This subclass is indented under subclass E29.112. This subclass is substantially the same in scope as ECLA classification H01L29/423. | |
E29.124 | .... Base electrodes for bipolar transistors (EPO): |
This subclass is indented under subclass E29.123. This subclass is substantially the same in scope as ECLA classification H01L29/423B. | |
E29.125 | .... Gate electrodes for thyristors (EPO): |
This subclass is indented under subclass E29.123. This subclass is substantially the same in scope as ECLA classification H01L29/423C. | |
E29.126 | .... Gate stack for field-effect devices (EPO): |
This subclass is indented under subclass E29.123. This subclass is substantially the same in scope as ECLA classification H01L29/423D. | |
E29.127 | ..... For field-effect transistors (EPO): |
This subclass is indented under subclass E29.126. This subclass is substantially the same in scope as ECLA classification H01L29/423D2. | |
E29.128 | ...... With insulated gate (EPO): |
This subclass is indented under subclass E29.127. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B. | |
E29.129 | ....... Gate electrodes for transistors with floating gate (EPO): |
This subclass is indented under subclass E29.128. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B2. | |
E29.13 | ....... Gate electrodes for nonplanar MOSFET (EPO): |
This subclass is indented under subclass E29.128.
This subclass is substantially the same in scope as ECLA classification
H01L29/423D2B4.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.131 | ........ Having drain and source regions at different vertical level having channel composed only of vertical sidewall connecting drain and source layers (EPO): |
This subclass is indented under subclass E29.13. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B4B. | |
E29.132 | ....... Characterized by insulating layer (EPO): |
This subclass is indented under subclass E29.128. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B6. | |
E29.133 | ........ Nonuniform insulating layer thickness (EPO): |
This subclass is indented under subclass E29.132. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B6B. | |
E29.134 | ....... Characterized by configuration of gate electrode layer (EPO): |
This subclass is indented under subclass E29.128. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B7. | |
E29.135 | ........ Characterized by length or sectional shape (EPO): |
This subclass is indented under subclass E29.134. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B7B. | |
E29.136 | ........ Characterized by surface lay-out (EPO): |
This subclass is indented under subclass E29.134. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B7C. | |
E29.137 | ....... Characterized by configuration of gate stack of thin film FETs (EPO): |
This subclass is indented under subclass E29.128. This subclass is substantially the same in scope as ECLA classification H01L29/423D2B8. | |
E29.138 | ..... For charge coupled devices (EPO): |
This subclass is indented under subclass E29.126. This subclass is substantially the same in scope as ECLA classification H01L29/423D3. | |
E29.139 | .. Of specified material (EPO): |
This subclass is indented under subclass E29.002. This subclass is substantially the same in scope as ECLA classification H01L29/43. | |
E29.14 | ... For gate of heterojunction field- effect devices (EPO): |
This subclass is indented under subclass E29.139. This subclass is substantially the same in scope as ECLA classification H01L29/43B. | |
E29.141 | ... Resistive materials for field-effect devices (EPO): |
This subclass is indented under subclass E29.139. This subclass is substantially the same in scope as ECLA classification H01L29/43C. | |
E29.142 | ... Superconductor materials (EPO): |
This subclass is indented under subclass E29.139. This subclass is substantially the same in scope as ECLA classification H01L29/43D. | |
E29.143 | ... Ohmic electrodes (EPO): |
This subclass is indented under subclass E29.139. This subclass is substantially the same in scope as ECLA classification H01L29/45. | |
E29.144 | .... On Group III-V material (EPO): |
This subclass is indented under subclass E29.143. This subclass is substantially the same in scope as ECLA classification H01L29/45B. | |
E29.145 | ..... On thin-film Group III-V material (EPO): |
This subclass is indented under subclass E29.144. This subclass is substantially the same in scope as ECLA classification H01L29/45B2. | |
E29.146 | .... On silicon (EPO): |
This subclass is indented under subclass E29.143. This subclass is substantially the same in scope as ECLA classification H01L29/45S. | |
E29.147 | ..... For thin-film silicon (EPO): |
This subclass is indented under subclass E29.146. This subclass is substantially the same in scope as ECLA classification H01L29/45S2. | |
E29.148 | ... Schottky barrier electrodes (EPO): |
This subclass is indented under subclass E29.139. This subclass is substantially the same in scope as ECLA classification H01L29/47. | |
E29.149 | .... On Group III-V material (EPO): |
This subclass is indented under subclass E29.148. This subclass is substantially the same in scope as ECLA classification H01L29/47B. | |
E29.15 | ... Electrodes for IGFET (EPO): |
This subclass is indented under subclass E29.139. This subclass is substantially the same in scope as ECLA classification H01L29/49. | |
E29.151 | .... For TFT (EPO): |
This subclass is indented under subclass E29.15. This subclass is substantially the same in scope as ECLA classification H01L29/49B. | |
E29.152 | .... With lateral structure (e.g., poly-silicon gate with lateral doping variation or with lateral composition variation or characterized by sidewalls being composed of conductive, resistivity) (EPO): |
This subclass is indented under subclass E29.15. This subclass is substantially the same in scope as ECLA classification H01L29/49F. | |
E29.154 | .... Silicon gate conductor material (EPO): |
This subclass is indented under subclass E29.15. This subclass is substantially the same in scope as ECLA classification H01L29/49C. | |
E29.155 | ..... Multiple silicon layers: |
This subclass is indented under subclass E29.154.
This subclass is substantially the same in scope as ECLA classification
H01L29/49C2
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.156 | ...... Including silicide layer contacting silicon layer (EPO): |
This subclass is indented under subclass E29.155.
This subclass is substantially the same in scope as ECLA classification
H01L29/49C2B.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.157 | ...... Including barrier layer between silicon and non-Si electrode: |
This subclass is indented under subclass E29.155. This subclass is substantially the same in scope as ECLA classification H01L29/49C2C. | |
E29.158 | .... Elemental metal gate conductor material (e.g., W, Mo) (EPO): |
This subclass is indented under subclass E29.15. This subclass is substantially the same in scope as ECLA classification H01L29/49D. | |
E29.159 | ..... Diverse conductors (EPO): |
This subclass is indented under subclass E29.158. This subclass is substantially the same in scope as ECLA classification H01L29/49D2. | |
E29.16 | .... Gate conductor material being compound or alloy material (e.g., organic material, TiN, MoSi2 ) (EPO): |
This subclass is indented under subclass E29.15. This subclass is substantially the same in scope as ECLA classification H01L29/49E. | |
E29.161 | ..... Silicide (EPO): |
This subclass is indented under subclass E29.16. This subclass is substantially the same in scope as ECLA classification H01L29/49E2. | |
E29.162 | .... Insulating materials for IGFET (EPO): |
This subclass is indented under subclass E29.15.
This subclass is substantially the same in scope as ECLA classification
H01L29/51.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.164 | ..... With at least one ferroelectric layer (EPO): |
This subclass is indented under subclass E29.162. This subclass is substantially the same in scope as ECLA classification H01L29/51F. | |
E29.165 | ..... Multiple layers (EPO): |
This subclass is indented under subclass E29.162. This subclass is substantially the same in scope as ECLA classification H01L29/51B. | |
E29.166 | . Types of semiconductor device (EPO): |
This subclass is indented under subclass E29.001. This subclass is substantially the same in scope as ECLA classification H01L29/66. | |
E29.167 | .. Controllable by plural effects that include variations in magnetic field, mechanical force, or electric current/potential applied to device or one or more electrodes of device (EPO): |
This subclass is indented under subclass E29.166.
Subject matter wherein the performance of the device is regulated
by varying the application of two or more forces (i.e., magnetic
field, mechanical force, electric current/potential
to the device or one or more of its electrodes).
This subclass is substantially the same in scope as ECLA classification
H01L29/96.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||||||
E29.168 | .. Quantum effect device (EPO): |
This subclass is indented under subclass E29.166.
Subject matter wherein the device operation uses a quantum effect.
This subclass is substantially the same in scope as ECLA classification
H01L29/66Q.
| |||
E29.169 | .. Controllable by only signal applied to control electrode (e.g., base of bipolar transistor, gate of field-effect transistor) (EPO): |
This subclass is indented under subclass E29.166
Subject matter wherein the device operation is regulated solely
by an electrical signal input to one of its control electrodes. This
subclass is substantially the same in scope as ECLA classification
H01L29/68.
| |||
E29.17 | ... Memory effect devices (EPO): |
This subclass is indented under subclass E29.169. This subclass is substantially the same in scope as ECLA classification H01L29/68E. | |
E29.171 | ... Bipolar device (EPO): |
This subclass is indented under subclass E29.169. This subclass is substantially the same in scope as ECLA classification H01L29/70. | |
E29.172 | .... Double-base diode (EPO): |
This subclass is indented under subclass E29.171. This subclass is substantially the same in scope as ECLA classification H01L29/70B. | |
E29.173 | .... Transistor-type device (i.e., able to continuously respond to applied control signal): |
This subclass is indented under subclass E29.171. This subclass is substantially the same in scope as ECLA classification H01L29/72. | |
E29.174 | ..... Bipolar junction transistor: |
This subclass is indented under subclass E29.173. This subclass is substantially the same in scope as ECLA classification H01L29/73. | |
E29.175 | ...... Structurally associated with other devices (EPO): |
This subclass is indented under subclass E29.174.
This subclass is substantially the same in scope as ECLA classification
H01L29/73B.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.176 | ...... Device being resistive element (e.g., ballasting resistor) (EPO): |
This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/73B2. | |
E29.177 | ...... Point contact transistors (EPO): |
This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/73C. | |
E29.178 | ...... Schottky transistors (EPO): |
This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/73D. | |
E29.179 | ...... Tunnel transistors (EPO): |
This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/73E. | |
E29.18 | ...... Avalanche transistors (EPO): |
This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/73F. | |
E29.181 | ...... Transistors with hook collector (i.e., collector having two layers of opposite conductivity type (e.g., SCR)) (EPO): |
This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/73J. | |
E29.182 | ...... Bipolar thin-film transistors (EPO): |
This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/73K. | |
E29.183 | ...... Vertical transistor (EPO): |
This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/732. | |
E29.184 | ....... Having emitter-base and base-collector junctions in same plane (EPO): |
This subclass is indented under subclass E29.183. This subclass is substantially the same in scope as ECLA classification H01L29/732B. | |
E29.185 | ....... Having emitter-base junction and base-collector junction on different surfaces (e.g., mesa planar transistor) (EPO): |
This subclass is indented under subclass E29.183. This subclass is substantially the same in scope as ECLA classification H01L29/732C. | |
E29.186 | ....... Inverse vertical transistor (EPO): |
This subclass is indented under subclass E29.183. This subclass is substantially the same in scope as ECLA classification H01L29/732D. | |
E29.187 | ...... Lateral transistor (EPO): |
This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/735. | |
E29.188 | ...... Hetero-junction transistor (EPO): |
This subclass is indented under subclass E29.174. This subclass is substantially the same in scope as ECLA classification H01L29/737. | |
E29.189 | ....... Vertical transistors (EPO): |
This subclass is indented under subclass E29.188. This subclass is substantially the same in scope as ECLA classification H01L29/737B. | |
E29.19 | ........ Having two-dimensional base (e.g., modulation-doped base, inversion layer base, delta-doped base) (EPO): |
This subclass is indented under subclass E29.189. This subclass is substantially the same in scope as ECLA classification H01L29/737B2. | |
E29.191 | ........ Having emitter comprising one or more nonmonocrystalline elements of Group IV (e.g., amorphous silicon) alloys comprising Group IV elements (EPO): |
This subclass is indented under subclass E29.189. This subclass is substantially the same in scope as ECLA classification H01L29/737B4. | |
E29.192 | ........ Resonant tunneling transistors (EPO): |
This subclass is indented under subclass E29.189. This subclass is substantially the same in scope as ECLA classification H01L29/737B6. | |
E29.193 | ........ Comprising lattice mismatched active layers (e.g., SiGe strained layer transistors) (EPO): |
This subclass is indented under subclass E29.189. This subclass is substantially the same in scope as ECLA classification H01L29/737B8. | |
E29.194 | ..... Controlled by field effect (e.g., bipolar static induction transistor (BSIT)) (EPO): |
This subclass is indented under subclass E29.173. This
subclass is substantially the same in scope as ECLA classification
H01L29/739.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.195 | ...... Gated diode structure (EPO): |
This subclass is indented under subclass E29.194. This subclass is substantially the same in scope as ECLA classification H01L29/739B. | |
E29.196 | ....... With PN junction gate (e.g., field-controlled thyristor (FCTh), static induction thyristor (SITh)) (EPO): |
This subclass is indented under subclass E29.195. This subclass is substantially the same in scope as ECLA classification H01L29/739B2. | |
E29.197 | ...... Insulated gate bipolar mode transistor (e.g., IGBT; IGT; COMFET) (EPO): |
This subclass is indented under subclass E29.194. This subclass is substantially the same in scope as ECLA classification H01L29/739C. | |
E29.198 | ....... Transistor with vertical current flow (EPO): |
This subclass is indented under subclass E29.197. This subclass is substantially the same in scope as ECLA classification H01L29/739C2. | |
E29.199 | ........ With both emitter and collector contacts in same substrate side (EPO): |
This subclass is indented under subclass E29.198. This subclass is substantially the same in scope as ECLA classification H01L29/739C2C. | |
E29.2 | ........ With nonplanar surface (e.g., with nonplanar gate or with trench or recess or pillar in surface of emitter, base, or collector region for improving current density or short-circuiting emitter and base regions) (EPO): |
This subclass is indented under subclass E29.198. This subclass is substantially the same in scope as ECLA classification H01L29/739C2B. | |
E29.201 | ......... And gate structure lying on slanted or vertical surface or formed in groove (e.g., trench gate IGBT) (EPO): |
This subclass is indented under subclass E29.2. This subclass is substantially the same in scope as ECLA classification H01L29/739C2B2. | |
E29.202 | ....... Thin-film device (EPO): |
This subclass is indented under subclass E29.197. This subclass is substantially the same in scope as ECLA classification H01L29/739C1. | |
E29.211 | .... Thyristor-type device (e.g., having four-zone regenerative action) (EPO): |
This subclass is indented under subclass E29.171. This
subclass is substantially the same in scope as ECLA classification
H01L29/74.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.212 | ..... Gate-turn-off device (EPO): |
This subclass is indented under subclass E29.211. This subclass is substantially the same in scope as ECLA classification H01L29/744. | |
E29.213 | ...... With turn off by field effect (EPO): |
This subclass is indented under subclass E29.212. This subclass is substantially the same in scope as ECLA classification H01L29/745. | |
E29.214 | ....... Produced by insulated gate structure (EPO): |
This subclass is indented under subclass E29.213. This subclass is substantially the same in scope as ECLA classification H01L29/745B. | |
E29.215 | ..... Bidirectional device (e.g., triac) (EPO): |
This subclass is indented under subclass E29.211. This subclass is substantially the same in scope as ECLA classification H01L29/747. | |
E29.216 | ..... With turn on by field effect (EPO): |
This subclass is indented under subclass E29.211. This subclass is substantially the same in scope as ECLA classification H01L29/749. | |
E29.217 | ..... Combined structurally with at least one other device (EPO): |
This subclass is indented under subclass E29.211. This subclass is substantially the same in scope as ECLA classification H01L29/74B. | |
E29.218 | ...... Combined with capacitor or resistor (EPO): |
This subclass is indented under subclass E29.217. This subclass is substantially the same in scope as ECLA classification H01L29/74B2. | |
E29.219 | ...... Combined with diode (EPO): |
This subclass is indented under subclass E29.217. This subclass is substantially the same in scope as ECLA classification H01L29/74B4. | |
E29.22 | ....... Antiparallel diode (EPO): |
This subclass is indented under subclass E29.219. This
subclass is substantially the same in scope as ECLA classification
H01L29/74B4B.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.221 | ...... Combined with field-effect transistor (EPO): |
This subclass is indented under subclass E29.217. This
subclass is substantially the same in scope as ECLA classification
H01L29/74B6.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.222 | ..... Having built-in localized breakdown/breakover region (EPO): |
This subclass is indented under subclass E29.211. This subclass is substantially the same in scope as ECLA classification H01L29/74C. | |
E29.223 | ..... Having amplifying gate structure (e.g., Darlington configuration) (EPO): |
This subclass is indented under subclass E29.211. This subclass is substantially the same in scope as ECLA classification H01L29/74D. | |
E29.224 | ..... Asymmetrical thyristor (EPO): |
This subclass is indented under subclass E29.211. This
subclass is substantially the same in scope as ECLA classification
H01L29/74E.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.225 | ..... Lateral thyristor (EPO): |
This subclass is indented under subclass E29.211. This subclass is substantially the same in scope as ECLA classification H01L29/74F. | |
E29.226 | ... Unipolar device (EPO): |
This subclass is indented under subclass E29.169. This subclass is substantially the same in scope as ECLA classification H01L29/76. | |
E29.227 | .... Charge transfer device (EPO): |
This subclass is indented under subclass E29.226. This subclass is substantially the same in scope as ECLA classification H01L29/762. | |
E29.228 | ..... Charge-coupled device (EPO): |
This subclass is indented under subclass E29.227. This subclass is substantially the same in scope as ECLA classification H01L29/765. | |
E29.229 | ...... With field effect produced by insulated gate (EPO): |
This subclass is indented under subclass E29.228. This subclass is substantially the same in scope as ECLA classification H01L29/768. | |
E29.23 | ....... Input structure (EPO): |
This subclass is indented under subclass E29.229. This subclass is substantially the same in scope as ECLA classification H01L29/768B. | |
E29.231 | ....... Output structure (EPO): |
This subclass is indented under subclass E29.229. This subclass is substantially the same in scope as ECLA classification H01L29/768C. | |
E29.232 | ....... Structure for improving output signal (EPO): |
This subclass is indented under subclass E29.229. This subclass is substantially the same in scope as ECLA classification H01L29/768D. | |
E29.233 | ....... Buried channel CCD (EPO): |
This subclass is indented under subclass E29.229. This subclass is substantially the same in scope as ECLA classification H01L29/768E. | |
E29.234 | ........ Two-phase CCD (EPO): |
This subclass is indented under subclass E29.233. This subclass is substantially the same in scope as ECLA classification H01L29/768E2. | |
E29.235 | ........ Three-phase CCD (EPO): |
This subclass is indented under subclass E29.233. This subclass is substantially the same in scope as ECLA classification H01L29/768E3. | |
E29.236 | ........ Four-phase CCD (EPO): |
This subclass is indented under subclass E29.233. This subclass is substantially the same in scope as ECLA classification H01L29/768E4. | |
E29.237 | ....... Surface channel CCD (EPO): |
This subclass is indented under subclass E29.229. This subclass is substantially the same in scope as ECLA classification H01L29/768F. | |
E29.238 | ........ Two-phase CCD (EPO): |
This subclass is indented under subclass E29.237. This subclass is substantially the same in scope as ECLA classification H01L29/768F2. | |
E29.239 | ........ Three-phase CCD (EPO): |
This subclass is indented under subclass E29.237. This subclass is substantially the same in scope as ECLA classification H01L29/768F3. | |
E29.24 | ........ Four-phase CCD (EPO): |
This subclass is indented under subclass E29.237. This subclass is substantially the same in scope as ECLA classification H01L29/768F4. | |
E29.241 | .... Hot electron transistor (HET) or metal base transistor (MBT) (EPO): |
This subclass is indented under subclass E29.226. This subclass is substantially the same in scope as ECLA classification H01L29/76C. | |
E29.242 | .... Field-effect transistor (EPO): |
This subclass is indented under subclass E29.226. This subclass is substantially the same in scope as ECLA classification H01L29/772. | |
E29.243 | ..... Using static field induced region (e.g., SIT, PBT) (EPO): |
This subclass is indented under subclass E29.242. This subclass is substantially the same in scope as ECLA classification H01L29/772B. | |
E29.244 | ..... Velocity modulations transistor (i.e., VMT) (EPO): |
This subclass is indented under subclass E29.242. This subclass is substantially the same in scope as ECLA classification H01L29/772D. | |
E29.245 | ..... With one-dimensional charge carrier gas channel (e.g., quantum wire FET) (EPO): |
This subclass is indented under subclass E29.242. This subclass is substantially the same in scope as ECLA classification H01L29/775. | |
E29.246 | ..... With two-dimensional charge carrier gas channel (e.g., HEMT; with two-dimensional charge-carrier layer formed at heterojunction interface) (EPO): |
This subclass is indented under subclass E29.242. This subclass is substantially the same in scope as ECLA classification H01L29/778. | |
E29.247 | ...... With inverted single heterostructure (i.e., with active layer formed on top of wide bandgap layer (e.g., IHEMT)) (EPO): |
This subclass is indented under subclass E29.246. This subclass is substantially the same in scope as ECLA classification H01L29/778B. | |
E29.248 | ...... With confinement of carriers by at least two heterojunctions (e.g., DHHEMT, quantum well HEMT, DHMODFET) (EPO): |
This subclass is indented under subclass E29.246. This subclass is substantially the same in scope as ECLA classification H01L29/778C. | |
E29.249 | ....... Using Group III-V semiconductor material (EPO): |
This subclass is indented under subclass E29.248. This subclass is substantially the same in scope as ECLA classification H01L29/778C2. | |
E29.25 | ........ With more than one donor layer (EPO): |
This subclass is indented under subclass E29.249. This subclass is substantially the same in scope as ECLA classification H01L29/778C2C. | |
E29.251 | ........ With delta or planar doped donor layer (EPO): |
This subclass is indented under subclass E29.249. This subclass is substantially the same in scope as ECLA classification H01L29/778C2B. | |
E29.252 | ...... With direct single heterostructure (i.e., with wide bandgap layer formed on top of active layer (e.g., direct single heterostructure MIS-like HEMT)) (EPO): |
This subclass is indented under subclass E29.246. This subclass is substantially the same in scope as ECLA classification H01L29/778E. | |
E29.253 | ....... With wide bandgap charge-carrier supplying layer (e.g., direct single heterostructure MODFET) (EPO): |
This subclass is indented under subclass E29.252. This subclass is substantially the same in scope as ECLA classification H01L29/778E2. | |
E29.254 | ..... With delta-doped channel (EPO): |
This subclass is indented under subclass E29.242. This subclass is substantially the same in scope as ECLA classification H01L29/772C. | |
E29.255 | ..... With field effect produced by insulated gate (EPO): |
This subclass is indented under subclass E29.242. This subclass is substantially the same in scope as ECLA classification H01L29/78. | |
E29.256 | ...... With channel containing layer contacting drain drift region (e.g., DMOS transistor) (EPO): |
This subclass is indented under subclass E29.255. This subclass is substantially the same in scope as ECLA classification H01L29/78B. | |
E29.257 | ....... Having vertical bulk current component or current vertically following trench gate (e.g., vertical power DMOS transistor) (EPO): |
This subclass is indented under subclass E29.256. This subclass is substantially the same in scope as ECLA classification H01L29/78B2. | |
E29.258 | ........ With both source and drain contacts in same substrate side (EPO): |
This subclass is indented under subclass E29.257. This subclass is substantially the same in scope as ECLA classification H01L29/78B2C. | |
E29.259 | ........ With nonplanar surface (EPO): |
This subclass is indented under subclass E29.257. This subclass is substantially the same in scope as ECLA classification H01L29/78B2B. | |
E29.26 | ......... Channel structure lying under slanted or vertical surface or being formed along surface of groove (e.g., trench gate DMOSFET) (EPO): |
This subclass is indented under subclass E29.259. This subclass is substantially the same in scope as ECLA classification H01L29/78B2B2. | |
E29.261 | ....... With at least part of active region on insulating substrate (e.g., lateral DMOS in oxide isolated well) (EPO): |
This subclass is indented under subclass E29.256. This
subclass is substantially the same in scope as ECLA classification
H01L29/78B1.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.262 | ...... Vertical transistor (EPO): |
This subclass is indented under subclass E29.255. This
subclass is substantially the same in scope as ECLA classification
H01L29/78C.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||||
E29.263 | ...... Comprising gate-to-body connection (i.e., bulk dynamic threshold voltage MOSFET) (EPO): |
This subclass is indented under subclass E29.255. This
subclass is substantially the same in scope as ECLA classification
H01L29/78D.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.264 | ...... With multiple gate structure (EPO): |
This subclass is indented under subclass E29.255. This
subclass is substantially the same in scope as ECLA classification
H01L29/78E.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.265 | ....... Structure comprising MOS gate and at least one non-MOS gate (e.g., JFET or MESFET gate) (EPO): |
This subclass is indented under subclass E29.264. This subclass is substantially the same in scope as ECLA classification H01L29/78E2. | |
E29.266 | ...... With lightly doped drain or source extension (EPO): |
This subclass is indented under subclass E29.255. This
subclass is substantially the same in scope as ECLA classification
H01L29/78F.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.267 | ....... With nonplanar structure (e.g., gate or source or drain being nonplanar) (EPO): |
This subclass is indented under subclass E29.266. This
subclass is substantially the same in scope as ECLA classification
H01L29/78F2.
| |||
E29.268 | ....... Source region and drain region having nonsymmetrical structure about gate electrode (EPO): |
This subclass is indented under subclass E29.266. This subclass is substantially the same in scope as ECLA classification H01L29/78F3. | |
E29.269 | ....... With overlap between lightly doped extension and gate electrode (EPO): |
This subclass is indented under subclass E29.266. This subclass is substantially the same in scope as ECLA classification H01L29/78F4. | |
E29.27 | ...... With buried channel (EPO): |
This subclass is indented under subclass E29.255. This subclass is substantially the same in scope as ECLA classification H01L29/78G. | |
E29.271 | ...... With Schottky drain or source contact (EPO): |
This subclass is indented under subclass E29.255. This subclass is substantially the same in scope as ECLA classification H01L29/78H. | |
E29.272 | ...... Gate comprising ferroelectric layer (EPO): |
This subclass is indented under subclass E29.255. This subclass is substantially the same in scope as ECLA classification H01L29/78K. | |
E29.273 | ...... Thin-film transistor (EPO): |
This subclass is indented under subclass E29.255. This
subclass is substantially the same in scope as ECLA classification
H01L29/786.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.274 | ....... Vertical transistor (EPO): |
This subclass is indented under subclass E29.273. This subclass is substantially the same in scope as ECLA classification H01L29/786C. | |
E29.275 | ....... With multiple gates (EPO): |
This subclass is indented under subclass E29.273. This
subclass is substantially the same in scope as ECLA classification
H01L29/786D.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.276 | ....... With supplementary region or layer in thin film or in insulated bulk substrate supporting it for controlling or increasing voltage resistance of device (EPO): |
This subclass is indented under subclass E29.273. This subclass is substantially the same in scope as ECLA classification H01L29/786B. | |
E29.277 | ........ Characterized by drain or source properties (EPO): |
This subclass is indented under subclass E29.276. This
subclass is substantially the same in scope as ECLA classification
H01L29/786B4.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.278 | ......... With LDD structure or extension or offset region or characterized by doping profile (EPO): |
This subclass is indented under subclass 29.277. This subclass is substantially the same in scope as ECLA classification H01L29/786B4B. | |
E29.279 | .......... Asymmetrical source and drain regions (EPO): |
This subclass is indented under subclass E29.278. This subclass is substantially the same in scope as ECLA classification H01L29/786B4B2. | |
E29.28 | ........ For preventing leakage current (EPO): |
This subclass is indented under subclass E29.276. This subclass is substantially the same in scope as ECLA classification H01L29/786B2. | |
E29.281 | ........ For preventing kink or snapback effect (e.g., discharging minority carriers of channel region for preventing bipolar effect) (EPO): |
This subclass is indented under subclass E29.276. This subclass is substantially the same in scope as ECLA classification H01L29/786B3. | |
E29.282 | ........ With light shield (EPO): |
This subclass is indented under subclass E29.276. This subclass is substantially the same in scope as ECLA classification H01L29/786B5. | |
E29.283 | ........ With supplementary region or layer for improving flatness of device (EPO): |
This subclass is indented under subclass E29.276. This subclass is substantially the same in scope as ECLA classification H01L29/786B6. | |
E29.284 | ........ With drain or source connected to bulk conducting substrate (EPO): |
This subclass is indented under subclass E29.276. This subclass is substantially the same in scope as ECLA classification H01L29/786B7. | |
E29.285 | ....... Silicon transistor (EPO): |
This subclass is indented under subclass E29.273. This subclass is substantially the same in scope as ECLA classification H01L29/786E. | |
E29.286 | ........ Monocrystalline only (EPO): |
This subclass is indented under subclass E29.285. This subclass is substantially the same in scope as ECLA classification H01L29/786E2. | |
E29.287 | ......... SOS transistor (EPO): |
This subclass is indented under subclass E29.286. This subclass is substantially the same in scope as ECLA classification H01L29/786E2B. | |
E29.288 | ........ Nonmonocrystalline (EPO): |
This subclass is indented under subclass E29.285. This subclass is substantially the same in scope as ECLA classification H01L29/786E4. | |
E29.289 | ......... Amorphous silicon transistor (EPO): |
This subclass is indented under subclass E29.288. This subclass is substantially the same in scope as ECLA classification H01L29/786E4B. | |
E29.29 | .......... With top gate (EPO): |
This subclass is indented under subclass E29.289. This subclass is substantially the same in scope as ECLA classification H01L29/786E4B2. | |
E29.291 | .......... With inverted transistor structure (EPO): |
This subclass is indented under subclass E29.289. This subclass is substantially the same in scope as ECLA classification H01L29/786E4B4. | |
E29.292 | ......... Polycrystalline or microcrystalline silicon transistor (EPO): |
This subclass is indented under subclass E29.288. This subclass is substantially the same in scope as ECLA classification H01L29/786E4C. | |
E29.293 | .......... With top gate (EPO): |
This subclass is indented under subclass E29.292. This subclass is substantially the same in scope as ECLA classification H01L29/786E4C2. | |
E29.294 | .......... With inverted transistor structure (EPO): |
This subclass is indented under subclass E29.292. This subclass is substantially the same in scope as ECLA classification H01L29/786E4C4. | |
E29.295 | ....... Characterized by insulating substrate or support (EPO): |
This subclass is indented under subclass E29.273. This subclass is substantially the same in scope as ECLA classification H01L29/786A. | |
E29.296 | ....... Comprising Group III-V or II-VI compound, or of Se, Te, or oxide semiconductor (EPO): |
This subclass is indented under subclass E29.273. This subclass is substantially the same in scope as ECLA classification H01L29/786F. | |
E29.297 | ....... Comprising Group IV non-Si semiconductor materials or alloys (e.g., Ge, SiN alloy, SiC alloy) (EPO): |
This subclass is indented under subclass E29.273. This subclass is substantially the same in scope as ECLA classification H01L29/786G. | |
E29.298 | ........ With multilayer structure or superlattice structure (EPO): |
This subclass is indented under subclass E29.297. This subclass is substantially the same in scope as ECLA classification H01L29/786G2. | |
E29.299 | ....... Characterized by property or structure of channel or contact thereto (EPO): |
This subclass is indented under subclass E29.273. This
subclass is substantially the same in scope as ECLA classification
H01L29/786H.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.3 | ...... With floating gate (EPO): |
This subclass is indented under subclass E29.255. This subclass is substantially the same in scope as ECLA classification H01L29/788. | |
E29.301 | ....... Programmable by two single electrons (EPO): |
This subclass is indented under subclass E29.3. This subclass is substantially the same in scope as ECLA classification H01L29/788D. | |
E29.302 | ....... Hi-lo programming levels only (EPO): |
This subclass is indented under subclass E29.300. This subclass is substantially the same in scope as ECLA classification H01L29/788B. | |
E29.303 | ........ Charging by injection of carriers through conductive insulator (e.g., Poole-Frankel conduction) (EPO): |
This subclass is indented under subclass E29.302. This subclass is substantially the same in scope as ECLA classification H01L29/788B2. | |
E29.304 | ........ Charging by tunneling of carriers (e.g., Fowler-Nordheim tunneling) (EPO): |
This subclass is indented under subclass E29.302. This subclass is substantially the same in scope as ECLA classification H01L29/788B4. | |
E29.305 | ........ Charging by hot carrier injection (EPO): |
This subclass is indented under subclass E29.302. This subclass is substantially the same in scope as ECLA classification H01L29/788B6. | |
E29.306 | ......... Hot carrier injection from channel (EPO): |
This subclass is indented under subclass E29.305. This subclass is substantially the same in scope as ECLA classification H01L29/788B6B. | |
E29.307 | ......... Hot carrier produced by avalanche breakdown of PN junction (e.g., FAMOS) (EPO): |
This subclass is indented under subclass E29.305. This subclass is substantially the same in scope as ECLA classification H01L29/788B6C. | |
E29.308 | ....... Programmable with more than two possible different levels (EPO): |
This subclass is indented under subclass E29.3. This subclass is substantially the same in scope as ECLA classification H01L29/788C. | |
E29.309 | ...... With charge trapping gate insulator (e.g., MNOS-memory transistors) (EPO): |
This subclass is indented under subclass E29.255. This subclass is substantially the same in scope as ECLA classification H01L29/792. | |
E29.31 | ..... With field effect produced by PN or other rectifying junction gate (i.e., potential barrier) (EPO): |
This subclass is indented under subclass E29.242. This subclass is substantially the same in scope as ECLA classification H01L29/80. | |
E29.311 | ...... With Schottky drain or source contact (EPO): |
This subclass is indented under subclass E29.31. This subclass is substantially the same in scope as ECLA classification H01L29/80C. | |
E29.312 | ...... With PN junction gate (e.g., PN homojunction gate) (EPO): |
This subclass is indented under subclass E29.31. This subclass is substantially the same in scope as ECLA classification H01L29/808. | |
E29.313 | ....... Vertical transistors (EPO): |
This subclass is indented under subclass E29.312. This
subclass is substantially the same in scope as ECLA classification
H01L29/808B.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.314 | ....... Thin-film JFET (EPO): |
This subclass is indented under subclass E29.312. This subclass is substantially the same in scope as ECLA classification H01L29/808C. | |
E29.315 | ...... With heterojunction gate (e.g., transistors with semiconductor layer acting as gate insulating layer) (EPO): |
This subclass is indented under subclass E29.31. This
subclass is substantially the same in scope as ECLA classification
H01L29/80B.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
E29.316 | ....... Programmable transistor (e.g., with charge-trapping quantum well) (EPO): |
This subclass is indented under subclass E29.315. This subclass is substantially the same in scope as ECLA classification H01L29/80B2. | |
E29.317 | ...... With Schottky gate (EPO): |
This subclass is indented under subclass E29.31. This
subclass is substantially the same in scope as ECLA classification
H01L29/812.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.318 | ....... Vertical transistors (EPO): |
This subclass is indented under subclass E29.317. This
subclass is substantially the same in scope as ECLA classification
H01L29/812B.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E29.319 | ....... With multiple gate (EPO): |
This subclass is indented under subclass E29.317. This subclass is substantially the same in scope as ECLA classification H01L29/812C. | |
E29.32 | ....... Thin-film MESFET (EPO): |
This subclass is indented under subclass E29.317. This subclass is substantially the same in scope as ECLA classification H01L29/812D. | |
E29.321 | ....... With recessed gate (EPO): |
This subclass is indented under subclass E29.317. This subclass is substantially the same in scope as ECLA classification H01L29/812E. | |
E29.322 | .... Single electron transistors: Coulomb blockade device (EPO): |
This subclass is indented under subclass E29.226. This subclass is substantially the same in scope as ECLA classification H01L29/76D. | |
E29.323 | .. Controllable by variation of magnetic field applied to device (EPO): |
This subclass is indented under subclass E29.166. This subclass is substantially the same in scope as ECLA classification H01L29/82. | |
E29.324 | .. Controllable by variation of applied mechanical force (e.g., of pressure) (EPO): |
This subclass is indented under subclass E29.166. This subclass is substantially the same in scope as ECLA classification H01L29/84. | |
E29.325 | .. Controllable only by variation of electric current supplied or only electric potential applied to electrode carrying current to be rectified, amplified, oscillated, or switched (EPO): |
This subclass is indented under subclass E29.166. This subclass is substantially the same in scope as ECLA classification H01L29/86. | |
E29.326 | ... Resistor with PN junction (EPO): |
This subclass is indented under subclass E29.325. This subclass is substantially the same in scope as ECLA classification H01L29/8605. | |
E29.327 | ... Diode (EPO): |
This subclass is indented under subclass E29.325. This subclass is substantially the same in scope as ECLA classification H01L29/861. | |
E29.328 | .... Planar PN junction diode (EPO): |
This subclass is indented under subclass E29.327. This subclass is substantially the same in scope as ECLA classification H01L29/861B. | |
E29.329 | .... Mesa PN junction diode (EPO): |
This subclass is indented under subclass E29.327. This subclass is substantially the same in scope as ECLA classification H01L29/861C. | |
E29.33 | .... Hi-lo semiconductor device (e.g., memory device) (EPO): |
This subclass is indented under subclass E29.327. This subclass is substantially the same in scope as ECLA classification H01L29/861E. | |
E29.331 | .... Charge trapping diode (EPO): |
This subclass is indented under subclass E29.327. This subclass is substantially the same in scope as ECLA classification H01L29/861F. | |
E29.332 | .... Punchthrough diode (i.e., with bulk potential barrier (e.g., camel diode, planar doped barrier diode, graded bandgap diode)) (EPO): |
This subclass is indented under subclass E29.327. This subclass is substantially the same in scope as ECLA classification H01L29/861P. | |
E29.333 | .... Point contact diode (EPO): |
This subclass is indented under subclass E29.327. This subclass is substantially the same in scope as ECLA classification H01L29/862. | |
E29.334 | .... Transit-time diode (e.g., IMPATT, TRAPATT diode) (EPO): |
This subclass is indented under subclass E29.327. This subclass is substantially the same in scope as ECLA classification H01L29/864. | |
E29.335 | .... Avalanche diode (e.g., Zener diode) (EPO): |
This subclass is indented under subclass E29.327. This subclass is substantially the same in scope as ECLA classification H01L29/866. | |
E29.336 | .... PIN diode (EPO): |
This subclass is indented under subclass E29.327. This subclass is substantially the same in scope as ECLA classification H01L29/868. | |
E29.337 | .... Thyristor diode (i.e., having only two terminals and no control electrode (e.g., Shockley diode, break-over diode)) (EPO): |
This subclass is indented under subclass E29.327. This subclass is substantially the same in scope as ECLA classification H01L29/87. | |
E29.338 | .... Schottky diode (EPO): |
This subclass is indented under subclass E29.327. This subclass is substantially the same in scope as ECLA classification H01L29/872. | |
E29.339 | .... Tunneling diode (EPO): |
This subclass is indented under subclass E29.327. This subclass is substantially the same in scope as ECLA classification H01L29/88. | |
E29.34 | ..... Resonant tunneling diode (i.e., RTD, RTBD) (EPO): |
This subclass is indented under subclass E29.339. This subclass is substantially the same in scope as ECLA classification H01L29/88R. | |
E29.341 | ..... Esaki diode (EPO): |
This subclass is indented under subclass E29.339. This subclass is substantially the same in scope as ECLA classification H01L29/885. | |
E29.342 | ... Capacitor with potential barrier or surface barrier (EPO): |
This subclass is indented under subclass E29.325. This subclass is substantially the same in scope as ECLA classification H01L29/92. | |
E29.343 | .... Conductor-insulator-conductor capacitor on semiconductor substrate (EPO): |
This subclass is indented under subclass E29.342. This subclass is substantially the same in scope as ECLA classification H01L29/92B. | |
E29.344 | .... Variable capacitance diode (e.g., varactors) (EPO): |
This subclass is indented under subclass E29.342. This subclass is substantially the same in scope as ECLA classification H01L29/93. | |
E29.345 | .... Metal-insulator-semiconductor (e.g., MOS capacitor) (EPO): |
This subclass is indented under subclass E29.342. This subclass is substantially the same in scope as ECLA classification H01L29/94. | |
E29.346 | ..... Trench capacitor (EPO): |
This subclass is indented under subclass E29.345. This subclass is substantially the same in scope as ECLA classification H01L29/94B. | |
E29.347 | .. Controllable by thermal signal (e.g., IR) (EPO): |
This subclass is indented under subclass E29.166. This subclass is substantially the same in scope as ECLA classification H01L29/66B. | |
E45.001 | SOLID-STATE DEVICES ADAPTED FOR RECTIFYING, AMPLIFYING, OSCILLATING, OR SWITCHING WITHOUT POTENTIAL-JUMP BARRIER OR SURFACE BARRIER, E.G., DIELECTRIC TRIODES; OVSHINSKY-EFFECT DEVICES, PROCESSES, OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT THEREOF, OR OF PARTS THEREOF (EPO): |
This main group provides for solid state devices which change
from non-conductive state to semiconductive state to achieve
rectification, amplification, oscillation or switching action, upon
application of a minimum voltage, and processes or apparatus
peculiar to the manufacture or treatment thereof or of parts thereof. This
subclass is substantially the same in scope as ECLA classification
H01L45/00.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E45.002 | . Bistable switching devices, e.g., Ovshinsky-effect devices (EPO): |
This subclass is indented under subclass E45.001. This subclass is substantially the same in scope as ECLA classification H01L45/00B. | |
E45.003 | .. Switching materials being oxides or nitrides (EPO): |
This subclass is indented under subclass E45.002. This subclass is substantially the same in scope as ECLA classification H01L45/00B2. | |
E45.004 | .. N: Light-controlled Ovshinsky devices (EPO): |
This subclass is indented under subclass E45.002. This subclass is substantially the same in scope as ECLA classification H01L45/00B3. | |
E45.005 | . Charge density wave transport devices (EPO): |
This subclass is indented under subclass E45.001. This subclass is substantially the same in scope as ECLA classification H01L45/00C. | |
E45.006 | . Solid-state travelling-wave devices (EPO): |
This subclass is indented under subclass E45.001. This subclass is substantially the same in scope as ECLA classification H01L45/02. | |
E25.001 | ASSEMBLIES CONSISTING OF PLURALITY OF INDIVIDUAL SEMICONDUCTOR OR OTHER SOLID-STATE DEVICES (EPO): |
This main group provides for housing or mounting arrangements
of a plurality of discrete semiconductor or other solid state devices, e.g., side-by-side
and/or stacked arrangement of devices such as solar cells
and diodes. This subclass is substantially the same in
scope as ECLA classification H01L25/00.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
E25.002 | . All devices being of same type, e.g., assemblies of rectifier diodes (EPO): |
This subclass is indented under subclass E25.001. This
subclass is substantially the same in scope as ECLA classification
H01L25/03.
| |||
E25.003 | .. Devices not having separate containers (EPO): |
This subclass is indented under subclass E25.002. This subclass is substantially the same in scope as ECLA classification H01L25/04. | |
E25.004 | ... Devices responsive or sensitive to electromagnetic radiation, e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation (EPO): |
This subclass is indented under subclass E25.003. This subclass is substantially the same in scope as ECLA classification H01L25/04C. | |
E25.005 | .... Devices being arranged next to each other (EPO): |
This subclass is indented under subclass E25.004. This subclass is substantially the same in scope as ECLA classification H01L25/04C2. | |
E25.006 | .... Stacked arrangements of devices (EPO): |
This subclass is indented under subclass E25.004. This subclass is substantially the same in scope as ECLA classification H01L25/04C4. | |
E25.007 | ..... Devices being solar cells (EPO): |
This subclass is indented under subclass E25.006. This subclass is substantially the same in scope as ECLA classification H01L25/04C4C. | |
E25.008 | ... Organic solid-state devices (EPO): |
This subclass is indented under subclass E25.003. This subclass is substantially the same in scope as ECLA classification H01L25/04E. | |
E25.009 | .... Devices responsive or sensitive to electromagnetic radiation, e.g., infrared radiation, adapted for conversion of radiation into electrical energy or for control of electrical energy by such radiation, e.g., photovoltaic modules based on organic solar cells (EPO): |
This subclass is indented under subclass E25.008. This subclass is substantially the same in scope as ECLA classification H01L25/04E2. | |
E25.01 | ... Device consisting of plurality of semiconductor or other solid state devices or components formed in or on common substrate, e.g., integrated circuit device (EPO): |
This subclass is indented under subclass E25.003. This subclass is substantially the same in scope as ECLA classification H01L25/065. | |
E25.011 | .... Devices being arranged next and on each other, i.e., mixed assemblies (EPO): |
This subclass is indented under subclass E25.01. This subclass is substantially the same in scope as ECLA classification H01L25/065M. | |
E25.012 | .... Devices being arranged next to each other (EPO): |
This subclass is indented under subclass E25.01. This subclass is substantially the same in scope as ECLA classification H01L25/065N. | |
E25.013 | .... Stacked arrangements of devices (EPO): |
This subclass is indented under subclass E25.01. This subclass is substantially the same in scope as ECLA classification H01L25/065S. | |
E25.014 | ... Semiconductor devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (EPO): |
This subclass is indented under subclass E25.003. This subclass is substantially the same in scope as ECLA classification H01L25/07. | |
E25.015 | .... Devices being arranged next and on each other, i.e., mixed assemblies (EPO): |
This subclass is indented under subclass E25.014. This subclass is substantially the same in scope as ECLA classification H01L25/07M. | |
E25.016 | .... Devices being arranged next to each other (EPO): |
This subclass is indented under subclass E25.014. This subclass is substantially the same in scope as ECLA classification H01L25/07N. | |
E25.017 | .... Apertured devices mounted on one or more rods passed through apertures (EPO): |
This subclass is indented under subclass E25.014. This subclass is substantially the same in scope as ECLA classification H01L25/07R. | |
E25.018 | .... Stacked arrangements of nonapertured devices (EPO): |
This subclass is indented under subclass E25.014. This subclass is substantially the same in scope as ECLA classification H01L25/07S. | |
E25.019 | ... Incoherent light-emitting semiconductor devices having potential or surface barrier (EPO): |
This subclass is indented under subclass E25.003. This subclass is substantially the same in scope as ECLA classification H01L25/075. | |
E25.02 | .... Devices being arranged next to each other (EPO): |
This subclass is indented under subclass E25.019. This subclass is substantially the same in scope as ECLA classification H01L25/075N. | |
E25.021 | .... Stacked arrangements of devices (EPO): |
This subclass is indented under subclass E25.019. This subclass is substantially the same in scope as ECLA classification H01L25/075S. | |
E25.022 | .. Devices having separate containers (EPO): |
This subclass is indented under subclass E25.002. This subclass is substantially the same in scope as ECLA classification H01L25/10. | |
E25.023 | ... Device consisting of plurality of semiconductor or other solid-state devices or components formed in or on common substrate, e.g., integrated circuit device (EPO): |
This subclass is indented under subclass E25.022. This subclass is substantially the same in scope as ECLA classification H01L25/10J. | |
E25.024 | ... Semiconductors devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (EPO): |
This subclass is indented under subclass E25.022. This subclass is substantially the same in scope as ECLA classification H01L25/11. | |
E25.025 | .... Mixed assemblies (EPO): |
This subclass is indented under subclass E25.024. This subclass is substantially the same in scope as ECLA classification H01L25/11M. | |
E25.026 | .... Devices being arranged next to each other (EPO): |
This subclass is indented under subclass E25.024. This subclass is substantially the same in scope as ECLA classification H01L25/11N. | |
E25.027 | .... Stacked arrangements of devices (EPO): |
This subclass is indented under subclass E25.024. This subclass is substantially the same in scope as ECLA classification H01L25/11S. | |
E25.028 | ... Incoherent light-emitting semiconductor devices having potential or surface barrier (EPO): |
This subclass is indented under subclass E25.022. This subclass is substantially the same in scope as ECLA classification H01L25/13. | |
E25.029 | . Devices being of two or more types, e.g., forming hybrid circuits (EPO): |
This subclass is indented under subclass E25.001. This
subclass is substantially the same in scope as ECLA classification
H01L25/16.
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E25.03 | .. Devices being mounted on two or more different substrates (EPO): |
This subclass is indented under subclass E25.029. This subclass is substantially the same in scope as ECLA classification H01L25/16F. | |
E25.031 | .. Containers (EPO): |
This subclass is indented under subclass E25.029. This subclass is substantially the same in scope as ECLA classification H01L25/16H. | |
E25.032 | .. Comprising optoelectronic devices, e.g., LED, photodiodes (EPO): |
This subclass is indented under subclass E25.029. This subclass is substantially the same in scope as ECLA classification H01L25/16L. | |
E23.001 | PACKAGING, INTERCONNECTS, AND MARKINGS FOR SEMICONDUCTOR OR OTHER SOLID-STATE DEVICES (EPO): |
This main group provides for preformed physical means to cover or protect semiconductor or other solid state devices, electrical interconnection of such devices and lead elements for facilitating electrical interconnection of the chips or dies via intermediate (e.g., jumper) connections to other devices or components, and marks applied to chips or dies such as test patterns or alignment marks. This subclass is substantially the same in scope as ECLA classification H01L23/00. | |
E23.002 | . Details not otherwise provided for, e.g., protection against moisture (EPO): |
This subclass is indented under subclass E23.001. This
subclass is substantially the same in scope as ECLA classification
H01L23/00V.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E23.003 | . Mountings, e.g., nondetachable insulating substrates (EPO): |
This subclass is indented under subclass E23.001. This subclass is substantially the same in scope as ECLA classification H01L23/12. | |
E23.004 | .. Characterized by shape (EPO): |
This subclass is indented under subclass E23.003. This subclass is substantially the same in scope as ECLA classification H01L23/13. | |
E23.005 | .. Characterized by material or its electrical properties (EPO): |
This subclass is indented under subclass E23.003. This subclass is substantially the same in scope as ECLA classification H01L23/14. | |
E23.006 | ... Metallic substrates having insulating layers (EPO): |
This subclass is indented under subclass E23.005. This subclass is substantially the same in scope as ECLA classification H01L23/14M. | |
E23.007 | ... Organic substrates, e.g., plastic (EPO): |
This subclass is indented under subclass E23.005. This subclass is substantially the same in scope as ECLA classification H01L23/14P. | |
E23.008 | ... Semiconductor insulating substrates (EPO): |
This subclass is indented under subclass E23.005. This
subclass is substantially the same in scope as ECLA classification
H01L23/14S.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E23.009 | ... Ceramic or glass substrates (EPO): |
This subclass is indented under subclass E23.005. This subclass is substantially the same in scope as ECLA classification H01L23/15. | |
E23.01 | . Arrangements for conducting electric current to or from solid-state body in operation, e.g., leads, terminal arrangements (EPO): |
This subclass is indented under subclass E23.001. This subclass is substantially the same in scope as ECLA classification H01L23/48. | |
E23.011 | .. Internal lead connections, e.g., via connections, feedthrough structures (EPO): |
This subclass is indented under subclass E23.01. This subclass is substantially the same in scope as ECLA classification H01L23/48J. | |
E23.012 | .. Consisting of lead-in layers inseparably applied to semiconductor body (EPO): |
This subclass is indented under subclass E23.01. This subclass is substantially the same in scope as ECLA classification H01L23/482. | |
E23.013 | ... Bridge structure with air gap (EPO): |
This subclass is indented under subclass E23.012. This subclass is substantially the same in scope as ECLA classification H01L23/482A. | |
E23.014 | ... Beam leads (EPO): |
This subclass is indented under subclass E23.012. This subclass is substantially the same in scope as ECLA classification H01L23/482B. | |
E23.015 | ... Pads with extended contours, e.g., grid structure, branch structure, finger structure (EPO): |
This subclass is indented under subclass E23.012. This subclass is substantially the same in scope as ECLA classification H01L23/482E. | |
E23.016 | ... For devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g., silicon on sapphire devices, i.e., SOS (EPO): |
This subclass is indented under subclass E23.012. This subclass is substantially the same in scope as ECLA classification H01L23/482J. | |
E23.017 | ... Materials (EPO): |
This subclass is indented under subclass E23.012. This subclass is substantially the same in scope as ECLA classification H01L23/482M. | |
E23.018 | .... Conductive organic material or pastes, e.g., conductive adhesives, inks (EPO): |
This subclass is indented under subclass E23.017. This subclass is substantially the same in scope as ECLA classification H01L23/482M4. | |
E23.019 | ... Consisting of layered constructions comprising conductive layers and insulating layers, e.g., planar contacts (EPO): |
This subclass is indented under subclass E23.012. This subclass is substantially the same in scope as ECLA classification H01L23/485. | |
E23.02 | .... Bonding areas, e.g., pads (EPO): |
This subclass is indented under subclass E23.019. This subclass is substantially the same in scope as ECLA classification H01L23/485A. | |
E23.021 | .... Bump or ball contacts (EPO): |
This subclass is indented under subclass E23.019. This subclass is substantially the same in scope as ECLA classification H01L23/485B. | |
E23.022 | .... Overhang structure (EPO): |
This subclass is indented under subclass E23.019. This subclass is substantially the same in scope as ECLA classification H01L23/485H. | |
E23.023 | .. Consisting of soldered or bonded constructions (EPO): |
This subclass is indented under subclass E23.01. This subclass is substantially the same in scope as ECLA classification H01L23/488. | |
E23.024 | ... Wire-like arrangements or pins or rods (EPO): |
This subclass is indented under subclass E23.023. This subclass is substantially the same in scope as ECLA classification H01L23/49. | |
E23.025 | .... Characterized by materials of wires or their coatings (EPO): |
This subclass is indented under subclass E23.024. This subclass is substantially the same in scope as ECLA classification H01L23/49M. | |
E23.026 | ... Bases or plates or solder therefor (EPO): |
This subclass is indented under subclass E23.023. This subclass is substantially the same in scope as ECLA classification H01L23/492. | |
E23.027 | .... Having heterogeneous or anisotropic structure (EPO): |
This subclass is indented under subclass E26.026. This subclass is substantially the same in scope as ECLA classification H01L23/492H. | |
E23.028 | .... Characterized by material (EPO): |
This subclass is indented under subclass E23.026. This subclass is substantially the same in scope as ECLA classification H01L23/492M. | |
E23.029 | ..... Semiconductor (EPO): |
This subclass is indented under subclass E23.028. This subclass is substantially the same in scope as ECLA classification H01L23/492M2. | |
E23.03 | ..... Carbon (EPO): |
This subclass is indented under subclass E23.028. This subclass is substantially the same in scope as ECLA classification H01L23/492M3. | |
E23.031 | ... Lead frames or other flat leads (EPO): |
This subclass is indented under subclass E23.023.
This subclass is substantially the same in scope as ECLA classification
H01L23/495.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E23.032 | .... Additional leads (EPO): |
This subclass is indented under subclass E23.031. This subclass is substantially the same in scope as ECLA classification H01L23/495C. | |
E23.033 | ..... Additional leads being bump or wire (EPO): |
This subclass is indented under subclass E23.032. This subclass is substantially the same in scope as ECLA classification H01L23/495C2. | |
E23.034 | ..... Additional leads being tape carrier or flat leads (EPO): |
This subclass is indented under subclass E23.032. This subclass is substantially the same in scope as ECLA classification H01L23/495C4. | |
E23.035 | ..... Additional leads being multilayer (EPO): |
This subclass is indented under subclass E23.032. This subclass is substantially the same in scope as ECLA classification H01L23/495C6. | |
E23.036 | ..... Additional leads being wiring board (EPO): |
This subclass is indented under subclass E23.032. This subclass is substantially the same in scope as ECLA classification H01L23/495C8. | |
E23.037 | .... Characterized by die pad (EPO): |
This subclass is indented under subclass E23.031. This subclass is substantially the same in scope as ECLA classification H01L23/495A. | |
E23.038 | ..... Insulative substrate being used as die pad, e.g., ceramic, plastic (EPO): |
This subclass is indented under subclass E23.037. This subclass is substantially the same in scope as ECLA classification H01L23/495A2. | |
E23.039 | ..... Chip-on-leads or leads-on-chip techniques, i.e., inner lead fingers being used as die pad (EPO): |
This subclass is indented under subclass E23.037. This subclass is substantially the same in scope as ECLA classification H01L23/495A4. | |
E23.04 | ..... Having bonding material between chip and die pad (EPO): |
This subclass is indented under subclass E23.037. This subclass is substantially the same in scope as ECLA classification H01L23/495A6. | |
E23.041 | .... Multi layer (EPO): |
This subclass is indented under subclass E23.031. This subclass is substantially the same in scope as ECLA classification H01L23/495D. | |
E23.042 | .... Plurality of lead frames mounted in one device (EPO): |
This subclass is indented under subclass E23.031. This subclass is substantially the same in scope as ECLA classification H01L23/495F. | |
E23.043 | .... Geometry of lead frame (EPO): |
This subclass is indented under subclass E23.031. This subclass is substantially the same in scope as ECLA classification H01L23/495G. | |
E23.044 | ..... For devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (EPO): |
This subclass is indented under subclass E23.043. This subclass is substantially the same in scope as ECLA classification H01L23/495G8. | |
E23.045 | ..... Deformation absorbing parts in lead frame plane, e.g., meanderline shape (EPO): |
This subclass is indented under subclass E23.043. This subclass is substantially the same in scope as ECLA classification H01L23/495G2. | |
E23.046 | ..... Cross-section geometry (EPO): |
This subclass is indented under subclass E23.043. This subclass is substantially the same in scope as ECLA classification H01L23/495G4. | |
E23.047 | ...... Characterizedby bent parts (EPO): |
This subclass is indented under subclass E23.046. This subclass is substantially the same in scope as ECLA classification H01L23/495G4B. | |
E23.048 | ....... Bent parts being outer leads (EPO): |
This subclass is indented under subclass E23.047. This subclass is substantially the same in scope as ECLA classification H01L23/495G4B6. | |
E23.049 | ..... Insulating layers on lead frame, e.g., bridging members (EPO): |
This subclass is indented under subclass E23.043. This subclass is substantially the same in scope as ECLA classification H01L23/495G6. | |
E23.05 | ...... Side rails of lead frame, e.g., with perforations, sprocket holes (EPO): |
This subclass is indented under subclass E23.043. This subclass is substantially the same in scope as ECLA classification H01L23/495G9. | |
E23.051 | .... Specifically adapted to facilitate heat dissipation (EPO): |
This subclass is indented under subclass E21.031. This subclass is substantially the same in scope as ECLA classification H01L23/495H. | |
E23.052 | .... Assembly of semiconductor devices on lead frame (EPO): |
This subclass is indented under subclass E21.031. This subclass is substantially the same in scope as ECLA classification H01L23/495L. | |
E23.053 | .... Characterized by materials of lead frames or layers thereon (EPO): |
This subclass is indented under subclass E21.031. This subclass is substantially the same in scope as ECLA classification H01L23/495M. | |
E23.054 | ..... Metallic layers on lead frames (EPO): |
This subclass is indented under subclass E23.053. This subclass is substantially the same in scope as ECLA classification H01L23/495M1. | |
E23.055 | .... Consisting of thin flexible metallic tape with or without film carrier (EPO): |
This subclass is indented under subclass E23.031. This subclass is substantially the same in scope as ECLA classification H01L23 /495J. | |
E23.056 | .... Insulating layers on lead frames (EPO): |
This subclass is indented under subclass E23.031. This subclass is substantially the same in scope as ECLA classification H01L23/495M8. | |
E23.057 | .... Capacitor integral with or on lead frame (EPO): |
This subclass is indented under subclass E23.031. This subclass is substantially the same in scope as ECLA classification H01L23/495Q. | |
E23.058 | .... Battery in combination with lead frame (EPO): |
This subclass is indented under subclass E23.031. This subclass is substantially the same in scope as ECLA classification H01L23/495R. | |
E23.059 | .... Oscillators in combination with lead frame (EPO): |
This subclass is indented under subclass E23.031. This subclass is substantially the same in scope as ECLA classification H01L23/495S. | |
E23.06 | ... Leads, i.e., metallizationsor lead frames on insulating substrates, e.g., chip carriers (EPO): |
This subclass is indented under subclass E23.023. This subclass is substantially the same in scope as ECLA classification H01L23/498. | |
E23.061 | .... Leads being also applied on sidewalls or bottom of substrate, e.g., leadless packages for surface mounting (EPO): |
This subclass is indented under subclass E23.06. This subclass is substantially the same in scope as ECLA classification H01L23/498A. | |
E23.062 | .... Multilayer substrates (EPO): |
This subclass is indented under subclass E23.06. This subclass is substantially the same in scope as ECLA classification H01L23/498D. | |
E23.063 | .... Chip support structure consisting of plurality of insulating substrates (EPO): |
This subclass is indented under subclass E23.06. This subclass is substantially the same in scope as ECLA classification H01L23/498F. | |
E23.064 | .... For flat cards, e.g., credit cards (EPO): |
This subclass is indented under subclass E23.06. This subclass is substantially the same in scope as ECLA classification H01L23/498K. | |
E23.065 | .... Flexible insulating substrates (EPO): |
This subclass is indented under subclass E23.06. This subclass is substantially the same in scope as ECLA classification H01L23/498J. | |
E23.066 | .... Lead frames fixed on or encapsulated in insulating substrates (EPO): |
This subclass is indented under subclass E23.06. This subclass is substantially the same in scope as ECLA classification H01L23/498L. | |
E23.067 | .... Via connections through substrates, e.g., pins going through substrate, coaxial cables (EPO): |
This subclass is indented under subclass E23.06. This subclass is substantially the same in scope as ECLA classification H01L23/498E. | |
E23.068 | .... Additional leads joined to metallizations on insulating substrate, e.g., pins, bumps, wires, flat leads (EPO): |
This subclass is indented under subclass E23.06. This subclass is substantially the same in scope as ECLA classification H01L23/498C. | |
E23.069 | ..... Spherical bumps on substrate for external connection, e.g., ball grid arrays (BGA) (EPO): |
This subclass is indented under subclass E23.068. This subclass is substantially the same in scope as ECLA classification H01L23/498C4. | |
E23.07 | .... Geometry or layout (EPO): |
This subclass is indented under subclass E23.06. This subclass is substantially the same in scope as ECLA classification H01L23/498G. | |
E23.071 | ..... For devices adapted for rectifying, amplifying, oscillating, or switching, capacitors, or resistors with at least one potential-jump barrier or surface barrier (EPO): |
This subclass is indented under subclass E23.07. This subclass is substantially the same in scope as ECLA classification H01L23/498G8. | |
E23.072 | .... Characterized by materials (EPO): |
This subclass is indented under subclass E23.06.
This subclass is substantially the same in scope as ECLA classification
H01L23/498M.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
E23.073 | ..... Conductive materials containing semiconductor material (EPO): |
This subclass is indented under subclass E23.072. This subclass is substantially the same in scope as ECLA classification H01L23/498M2. | |
E23.074 | ..... Carbon, e.g., fullerenes (EPO): |
This subclass is indented under subclass E23.072. This
subclass is substantially the same in scope as ECLA classification
H01L23/498M3.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E23.075 | ..... Conductive materials containing organic materials or pastes, e.g., for thick films (EPO): |
This subclass is indented under subclass E23.072. This subclass is substantially the same in scope as ECLA classification H01L23/498M4. | |
E23.076 | ..... Conductive materials containing superconducting material (EPO): |
This subclass is indented under subclass E23.072. This subclass is substantially the same in scope as ECLA classification H01L23/498M6. | |
E23.077 | ..... Materials of insulating layers or coatings (EPO): |
This subclass is indented under subclass E23.072. This subclass is substantially the same in scope as ECLA classification H01L23/498M8. | |
E23.078 | .. Flexible arrangements, e.g., pressure contacts without soldering (EPO): |
This subclass is indented under subclass E23.01. This subclass is substantially the same in scope as ECLA classification H01L23/48F. | |
E23.079 | .. For integrated circuit devices, e.g., power bus, number of leads (EPO): |
This subclass is indented under subclass E23.01. This subclass is substantially the same in scope as ECLA classification H01L23/50. | |
E23.08 | . Arrangements for cooling, heating, ventilating or temperature compensation; temperature-sensing arrangements (EPO): |
This subclass is indented under subclass E23.001. This subclass is substantially the same in scope as ECLA classification H01L23/34. | |
E23.081 | .. Arrangements for heating (EPO): |
This subclass is indented under subclass E23.08. This subclass is substantially the same in scope as ECLA classification H01L23/34H. | |
E23.082 | .. Cooling arrangements using Peltier effect (EPO): |
This subclass is indented under subclass E23.08. This subclass is substantially the same in scope as ECLA classification H01L23/38. | |
E23.083 | .. Mountings or securing means for detachable cooling or heating arrangements; fixed by friction, plugs or springs (EPO): |
This subclass is indented under subclass E23.08. This subclass is substantially the same in scope as ECLA classification H01L23/40. | |
E23.084 | ... With bolts or screws (EPO): |
This subclass is indented under subclass E23.083. This subclass is substantially the same in scope as ECLA classification H01L23/40B. | |
E23.085 | .... For stacked arrangements of plurality of semiconductor devices (EPO): |
This subclass is indented under subclass E23.084. This subclass is substantially the same in scope as ECLA classification H01L23/40B8. | |
E23.086 | ... Snap-on arrangements, e.g., clips (EPO): |
This subclass is indented under subclass E23.083. This subclass is substantially the same in scope as ECLA classification H01L23/40S. | |
E23.087 | .. Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling (EPO): |
This subclass is indented under subclass E23.08. This subclass is substantially the same in scope as ECLA classification H01L23/42. | |
E23.088 | ... Cooling by change of state, e.g., use of heat pipes (EPO): |
This subclass is indented under subclass E23.087. This subclass is substantially the same in scope as ECLA classification H01L23/427. | |
E23.089 | .... By melting or evaporation of solids (EPO): |
This subclass is indented under subclass E23.088. This subclass is substantially the same in scope as ECLA classification H01L23/427S. | |
E23.09 | ... Auxiliary members in containers characterized by their shape, e.g., pistons (EPO): |
This subclass is indented under subclass E23.087. This subclass is substantially the same in scope as ECLA classification H01L23/433. | |
E23.091 | .... Bellows (EPO): |
This subclass is indented under subclass E23.09. This subclass is substantially the same in scope as ECLA classification H01L23/433B. | |
E23.092 | .... Auxiliary members in encapsulations (EPO): |
This subclass is indented under subclass E23.09. This subclass is substantially the same in scope as ECLA classification H01L23/433E. | |
E23.093 | .... In combination with jet impingement (EPO): |
This subclass is indented under subclass E23.09. This subclass is substantially the same in scope as ECLA classification H01L23/433J. | |
E23.094 | .... Pistons, e.g., spring-loaded members (EPO): |
This subclass is indented under subclass E23.09. This subclass is substantially the same in scope as ECLA classification H01L23/433P. | |
E23.095 | .. Complete device being wholly immersed in fluid other than air (EPO): |
This subclass is indented under subclass E23.08. This subclass is substantially the same in scope as ECLA classification H01L23/44. | |
E23.096 | ... Fluid being liquefied gas, e.g., in cryogenic vessel (EPO): |
This subclass is indented under subclass E23.095. This subclass is substantially the same in scope as ECLA classification H01L23/44C. | |
E23.097 | .. Involving transfer of heat by flowing fluids (EPO): |
This subclass is indented under subclass E23.08. This subclass is substantially the same in scope as ECLA classification H01L23/46. | |
E23.098 | ... By flowing liquids (EPO): |
This subclass is indented under subclass E23.097. This subclass is substantially the same in scope as ECLA classification H01L23/473. | |
E23.099 | ... By flowing gases, e.g., air (EPO): |
This subclass is indented under subclass E23.097. This subclass is substantially the same in scope as ECLA classification H01L23/467. | |
E23.1 | .... Jet impingement (EPO): |
This subclass is indented under subclassE23.099. This subclass is substantially the same in scope as ECLA classification H01L23/473J. | |
E23.101 | .. Selection of materials, or shaping, to facilitate cooling or heating, e.g., heat sinks (EPO): |
This subclass is indented under subclass E23.08.
This subclass is substantially the same in scope as ECLA classification
H01L23/36.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E23.102 | ... Cooling facilitated by shape of device (EPO): |
This subclass is indented under subclass E23.101. This subclass is substantially the same in scope as ECLA classification H01L23/367. | |
E23.103 | .... Foil-like cooling fins or heat sinks (EPO): |
This subclass is indented under subclass E23.102.
This subclass is substantially the same in scope as ECLA classification
H01L23/367F.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E23.104 | .... Characterized by shape of housing (EPO): |
This subclass is indented under subclass E23.102. This subclass is substantially the same in scope as ECLA classification H01L23/367H. | |
E23.105 | .... Wire-like or pin-like cooling fins or heat sinks (EPO): |
This subclass is indented under subclass E23.102. This subclass is substantially the same in scope as ECLA classification H01L23/367W. | |
E23.106 | ... Laminates or multilayers, e.g., direct bond copper ceramic substrates (EPO): |
This subclass is indented under subclass E23.101. This subclass is substantially the same in scope as ECLA classification H01L23/373L. | |
E23.107 | .... Organic materials with or without thermo-conductive filler (EPO): |
This subclass is indented under subclass E23.106. This subclass is substantially the same in scope as ECLA classification H01L23/373P. | |
E23.108 | .... Semiconductor materials (EPO): |
This subclass is indented under subclass E23.106. This subclass is substantially the same in scope as ECLA classification H01L23/ 373S. | |
E23.109 | .... Metallic materials (EPO): |
This subclass is indented under subclass E23.106. This subclass is substantially the same in scope as ECLA classification H01L23/373M. | |
E23.11 | ... Cooling facilitated by selection of materials for device (or materials for thermal expansion adaptation, e.g., carbon) (EPO): |
This subclass is indented under subclass E23.101. This subclass is substantially the same in scope as ECLA classification H01L23/373. | |
E23.111 | .... Diamond (EPO): |
This subclass is indented under subclass E23.11. This subclass is substantially the same in scope as ECLA classification H01L23/373D. | |
E23.112 | .... Having heterogeneous or anisotropic structure, e.g., powder or fibers in matrix, wire mesh, porous structures (EPO): |
This subclass is indented under subclass E23.11. This subclass is substantially the same in scope as ECLA classification H01L23/373H. | |
E23.113 | .... Ceramic materials or glass (EPO): |
This subclass is indented under subclass E23.11. This subclass is substantially the same in scope as ECLA classification H01L23/373C. | |
E23.114 | . Protection against radiation, e.g., light, electromagnetic waves (EPO): |
This subclass is indented under subclass E23.001. This subclass is substantially the same in scope as ECLA classification H01L23/552. | |
E23.115 | .. Against alpha rays (EPO): |
This subclass is indented under subclass E23.114. This subclass is substantially the same in scope as ECLA classification H01L23/556. | |
E23.116 | . Encapsulations, e.g., encapsulating layers, coatings, e.g., for protection (EPO): |
This subclass is indented under subclass E23.001. This
subclass is substantially the same in scope as ECLA classification
H01L23/28.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E23.117 | .. Characterized by material, e.g., carbon (EPO): |
This subclass is indented under subclass E23.116. This subclass is substantially the same in scope as ECLA classification H01L23/29. | |
E23.118 | ... Oxides or nitrides or carbides, e.g., ceramics, glass (EPO): |
This subclass is indented under subclass E23.117. This subclass is substantially the same in scope as ECLA classification H01L23/29C. | |
E23.119 | ... Organic, e.g., plastic,epoxy (EPO): |
This subclass is indented under subclass E23.117. This subclass is substantially the same in scope as ECLA classification H01L23/29P. | |
E23.12 | .... Organo-silicon compounds, e.g., silicone (EPO): |
This subclass is indented under subclass E23.119. This subclass is substantially the same in scope as ECLA classification H01L23/29P6. | |
E23.121 | .... Containing filler (EPO): |
This subclass is indented under subclass E23.119. This subclass is substantially the same in scope as ECLA classification H01L23/29P4. | |
E23.122 | ... Semiconductor material, e.g., amorphous silicon (EPO): |
This subclass is indented under subclass E23.117. This subclass is substantially the same in scope as ECLA classification H01L23/29S. | |
E23.123 | .. Characterized by arrangement or shape (EPO): |
This subclass is indented under subclass E23.116. This subclass is substantially the same in scope as ECLA classification H01L23/31. | |
E23.124 | ... Device being completely enclosed (EPO): |
This subclass is indented under subclass E23.123. This subclass is substantially the same in scope as ECLA classification H01L23/31H. | |
E23.125 | .... Substrate forming part of encapsulation (EPO): |
This subclass is indented under subclass E23.124. This subclass is substantially the same in scope as ECLA classification H01L23/31H2. | |
E23.126 | .... Double encapsulation or coating and encapsulation (EPO): |
This subclass is indented under subclass E23.124. This subclass is substantially the same in scope as ECLA classification H01L23/31H4. | |
E23.127 | .... Sealing arrangements between parts, e.g., adhesion promoters (EPO): |
This subclass is indented under subclass E23.124. This subclass is substantially the same in scope as ECLA classification H01L23/31H6. | |
E23.128 | .... Encapsulation having cavity (EPO): |
This subclass is indented under subclass E23.124. This subclass is substantially the same in scope as ECLA classification H01L23/31H8. | |
E23.129 | ... Partial encapsulation or coating (EPO): |
This subclass is indented under subclass E23.123. This
subclass is substantially the same in scope as ECLA classification
H01L23/ 31P.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E23.13 | .... Coating being foil (EPO): |
This subclass is indented under subclass E23.129. This subclass is substantially the same in scope as ECLA classification H01L23/31P4. | |
E23.131 | .... Coating or filling in grooves made in semiconductor body (EPO): |
This subclass is indented under subclass E23.129. This subclass is substantially the same in scope as ECLA classification H01L23/31P8. | |
E23.132 | .... Coating being directly applied to semiconductor body, e.g., passivation layer (EPO): |
This subclass is indented under subclass E23.129. This subclass is substantially the same in scope as ECLA classification H01L23/31P6. | |
E23.133 | .... Coating also covering sidewalls of semiconductor body (EPO): |
This subclass is indented under subclass E23.129. This subclass is substantially the same in scope as ECLA classification H01L23/31P10. | |
E23.134 | .... Multilayer coating (EPO): |
This subclass is indented under subclass E23.129. This subclass is substantially the same in scope as ECLA classification H01L23/31P12. | |
E23.135 | . Fillings or auxiliary members in containers or encapsulations, e.g., centering rings (EPO): |
This subclass is indented under subclass E23.001. This subclass is substantially the same in scope as ECLA classification H01L23/16. | |
E23.136 | .. Fillings characterized by material, its physical or chemical properties, or its arrangement within complete device (EPO): |
This subclass is indented under subclass E23.135. This subclass is substantially the same in scope as ECLA classification H01L23/18. | |
E23.137 | ... Including materials for absorbing or reacting with moisture or other undesired substances, e.g., getters (EPO): |
This subclass is indented under subclass E23.136. This subclass is substantially the same in scope as ECLA classification H01L23/26. | |
E23.138 | ... Gaseous at normal operating temperature of device (EPO): |
This subclass is indented under subclass E23.136. This subclass is substantially the same in scope as ECLA classification H01L23/20. | |
E23.139 | ... Liquid at normal operating temperature of device (EPO): |
This subclass is indented under subclass E23.136. This subclass is substantially the same in scope as ECLA classification H01L23/22. | |
E23.14 | ... Solid or gel at normal operating temperature of device (EPO): |
This subclass is indented under subclass E23.136. This subclass is substantially the same in scope as ECLA classification H01L23/24. | |
E23.141 | . Arrangements for conducting electric current within device in operation from one component to another, interconnections, e.g., wires, lead frames (EPO): |
This subclass is indented under subclass E23.001. This subclass is substantially the same in scope as ECLA classification H01L23/52. | |
E23.142 | .. Including external interconnections consisting of multilayer structure of conductive and insulating layers inseparably formed on semiconductor body (EPO): |
This subclass is indented under subclass E23.141. This subclass is substantially the same in scope as ECLA classification H01L23/522. | |
E23.143 | ... Crossover interconnections (EPO): |
This subclass is indented under subclass E23.142. This subclass is substantially the same in scope as ECLA classification H01L23/522A. | |
E23.144 | ... Capacitive arrangements or effects of, or between wiring layers (EPO): |
This subclass is indented under subclass E23.142. This subclass is substantially the same in scope as ECLA classification H01L23/522C. | |
E23.145 | ... Via connections in multilevel interconnection structure (EPO): |
This subclass is indented under subclass E23.142. This subclass is substantially the same in scope as ECLA classification H01L23/522E. | |
E23.146 | ... With adaptable interconnections (EPO): |
This subclass is indented under subclass E23.142. This subclass is substantially the same in scope as ECLA classification H01L23/525. | |
E23.147 | .... Comprising antifuses, i.e., connections having their state changed from nonconductive to conductive (EPO): |
This subclass is indented under subclass E23.146. This subclass is substantially the same in scope as ECLA classification H01L23/525A. | |
E23.148 | ..... Change of state resulting from use of external beam, e.g., laser beam or ion beam (EPO): |
This subclass is indented under subclass E23.147. This subclass is substantially the same in scope as ECLA classification H01L23/525A4. | |
E23.149 | .... Comprising fuses, i.e., connections having their state changed from conductive to nonconductive (EPO): |
This subclass is indented under subclass E23.146. This subclass is substantially the same in scope as ECLA classification H01L23/ 525F. | |
E23.15 | ..... Change of state resulting from use of external beam, e.g., laser beam or ion beam (EPO): |
This subclass is indented under subclass E23.149. This subclass is substantially the same in scope as ECLA classification H01L23/525F4. | |
E23.151 | ... Geometry or layout of interconnection structure (EPO): |
This subclass is indented under subclass E23.142. This subclass is substantially the same in scope as ECLA classification H01L23/ 528. | |
E23.152 | .... Cross-sectional geometry (EPO): |
This subclass is indented under subclass E23.151. This subclass is substantially the same in scope as ECLA classification H01L23/528C. | |
E23.153 | .... Arrangements of power or ground buses (EPO): |
This subclass is indented under subclass E23.151. This subclass is substantially the same in scope as ECLA classification H01L23/528P. | |
E23.154 | ... Characterized by materials (EPO): |
This subclass is indented under subclass E23.142. This subclass is substantially the same in scope as ECLA classification H01L23/532. | |
E23.155 | .... Conductive materials (EPO): |
This subclass is indented under subclass E23.154. This subclass is substantially the same in scope as ECLA classification H01L23/532M. | |
E23.156 | ..... Containing superconducting materials (EPO): |
This subclass is indented under subclass E23.155. This subclass is substantially the same in scope as ECLA classification H01L23/532M6. | |
E23.157 | ..... Based on metals, e.g., alloys, metal silicides (EPO): |
This subclass is indented under subclass E23.155. This subclass is substantially the same in scope as ECLA classification H01L23/532M1. | |
E23.158 | ...... Principal metal being aluminum (EPO): |
This subclass is indented under subclass E23.157. This subclass is substantially the same in scope as ECLA classification H01L23/532M1A. | |
E23.159 | ....... Aluminum alloys (EPO): |
This subclass is indented under subclass E23.158. This subclass is substantially the same in scope as ECLA classification H01L23/532M1A2. | |
E23.16 | ....... Additional layers associated with aluminum layers, e.g., adhesion, barrier, cladding layers (EPO): |
This subclass is indented under subclass E23.158. This subclass is substantially the same in scope as ECLA classification H01L23/532M1A4. | |
E23.161 | ...... Principal metal being copper (EPO): |
This subclass is indented under subclass E23.157. This subclass is substantially the same in scope as ECLA classification H01L23/532M1C. | |
E23.162 | ...... Principal metal being noble metal, e.g., gold (EPO): |
This subclass is indented under subclass E23.157. This subclass is substantially the same in scope as ECLA classification H01L23/532M1N. | |
E23.163 | ...... Principal metal being refractory metal (EPO): |
This subclass is indented under subclass E23.157. This subclass is substantially the same in scope as ECLA classification H01L23/532M1R. | |
E23.164 | ..... Containing semiconductor material, e.g., polysilicon (EPO): |
This subclass is indented under subclass E23.155. This subclass is substantially the same in scope as ECLA classification H01L23/532M2. | |
E23.165 | ..... Containing carbon, e.g., fullerenes (EPO): |
This subclass is indented under subclass E23.155. This
subclass is substantially the same in scope as ECLA classification
H01L23/532M3.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E23.166 | ..... Containing conductive organic materials or pastes, e.g., conductive adhesives, inks (EPO): |
This subclass is indented under subclass E23.155. This subclass is substantially the same in scope as ECLA classification H01L23/532M4. | |
E23.167 | .... Insulating materials (EPO): |
This subclass is indented under subclass E23.154. This subclass is substantially the same in scope as ECLA classification H01L23/532N. | |
E23.168 | .. Including internal interconnections, e.g., cross-under constructions (EPO): |
This subclass is indented under subclass E23.141. This
subclass is substantially the same in scope as ECLA classification
H01L23/535.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E23.169 | .. Interconnection structure between plurality of semiconductor chips being formed on or in insulating substrates (EPO): |
This subclass is indented under subclass E23.141.
This subclass is substantially the same in scope as ECLA classification
H01L23/538.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
E23.17 | ... Crossover interconnections, e.g., bridge stepovers (EPO): |
This subclass is indented under subclass E23.169. This subclass is substantially the same in scope as ECLA classification H01L23/538A. | |
E23.171 | ... Adaptable interconnections, e.g., for engineering changes (EPO): |
This subclass is indented under subclass E23.169. This subclass is substantially the same in scope as ECLA classification H01L23/538B. | |
E23.172 | ... Assembly of plurality of insulating substrates (EPO): |
This subclass is indented under subclass E23.169. This subclass is substantially the same in scope as ECLA classification H01L23/538F. | |
E23.173 | ... Multilayer substrates (EPO): |
This subclass is indented under subclass E23.169. This
subclass is substantially the same in scope as ECLA classification
H01L23/538D.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E23.174 | ... Conductive vias through substrate with or without pins, e.g., buried coaxial conductors (EPO): |
This subclass is indented under subclass E23.169. This
subclass is substantially the same in scope as ECLA classification
H01L23/538E.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E23.175 | ... Geometry or layout of interconnection structure (EPO): |
This subclass is indented under subclass E23.169. This subclass is substantially the in Same scope as ECLA classification H01L23/538G. | |
E23.176 | ... For flat cards, e.g., credit cards (EPO): |
This subclass is indented under subclass E23.169. This subclass is substantially the same in scope as ECLA classification H01L23/538K. | |
E23.177 | ... Flexible insulating substrates (EPO): |
This subclass is indented under subclass E23.169. This subclass is substantially the same in scope as ECLA classification H01L23/538J. | |
E23.178 | ... Chips being integrally enclosed by interconnect and support structures (EPO): |
This subclass is indented under subclass E23.169. This subclass is substantially the same in scope as ECLA classification H01L23/538V. | |
E23.179 | . Marks applied to semiconductor devices or parts, e.g., registration marks, test patterns, alignment structures, wafer maps (EPO): |
This subclass is indented under subclass E23.001. This
subclass is substantially the same in scope as ECLA classification
H01L23/544.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E23.18 | . Containers; seals (EPO): |
This subclass is indented under subclass E23.001. This subclass is substantially the same in scope as ECLA classification H01L23/02. | |
E23.181 | .. Characterized by shape of container or parts, e.g., caps, walls (EPO): |
This subclass is indented under subclass E23.180. This subclass is substantially the same in scope as ECLA classification H01L23/04. | |
E23.182 | ... Container being hollow construction having no base used as mounting for semiconductor body (EPO): |
This subclass is indented under subclass E23.181. This subclass is substantially the same in scope as ECLA classification H01L23/04B. | |
E23.183 | ... Container being hollow construction and having conductive base as mounting as well as lead for the semiconductor body (EPO): |
This subclass is indented under subclass E23.181. This subclass is substantially the same in scope as ECLA classification H01L23/043. | |
E23.184 | .... Other leads having insulating passage through base (EPO): |
This subclass is indented under subclass E23.183. This subclass is substantially the same in scope as ECLA classification H01L23/045. | |
E23.185 | .... Other leads being parallel to base (EPO): |
This subclass is indented under subclass E23.183. This subclass is substantially the same in scope as ECLA classification H01L23/047. | |
E23.186 | .... Other leads being perpendicular to base (EPO): |
This subclass is indented under subclass E23.183. This subclass is substantially the same in scope as ECLA classification H01L23/049. | |
E23.187 | .... Another lead being formed by cover plate parallel to base plate, e.g., sandwich type (EPO): |
This subclass is indented under subclass E23.183. This subclass is substantially the same in scope as ECLA classification H01L23/051. | |
E23.188 | ... Container being hollow construction and having insulating or insulated base as mounting for semiconductor body (EPO): |
This subclass is indented under subclass E23.181. This subclass is substantially the same in scope as ECLA classification H01L23/053. | |
E23.189 | .... Leads being parallel to base (EPO): |
This subclass is indented under subclass E23.188. This subclass is substantially the same in scope as ECLA classification H01L23/057. | |
E23.19 | .... Leads having passage through base (EPO): |
This subclass is indented under subclass E23.188. This subclass is substantially the same in scope as ECLA classification H01L23/055. | |
E23.191 | .. Characterized by material of container or its electrical properties (EPO): |
This subclass is indented under subclass E23.18. This subclass is substantially the same in scope as ECLA classification H01L23/06. | |
E23.192 | ... Material being electrical insulator, e.g., glass (EPO): |
This subclass is indented under subclass E23.191. This subclass is substantially the same in scope as ECLA classification H01L23/08. | |
E23.193 | .. Characterized by material or arrangement of seals between parts, e.g., between cap and base of container or between leads and walls of container (EPO): |
This subclass is indented under subclass E23.18. This subclass is substantially the same in scope as ECLA classification H01L23/10. | |
E23.194 | . Protection against mechanical damage (EPO): |
This subclass is indented under subclass E23.001. This subclass is substantially the same in scope as ECLA classification H01L23/00M. | |
E49.001 | SOLID-STATE DEVICES WITH AT LEAST ONE POTENTIAL-JUMP BARRIER OR SURFACE BARRIER USING ACTIVE LAYER OF LOWER ELECTRICAL CONDUCTIVITY THAN MATERIAL ADJACENT THERETO AND THROUGH WHICH CARRIER TUNNELING OCCURS, PROCESSES OR APPARATUS PECULIAR TO MANUFACTURE OR TREATMENT OF SUCH DEVICES, OR OF PARTS THEREOF (EPO): |
This main group provides for solid state devices with at least one potential-jump barrier or surface barrier using active layer of lower electrical conductivity than the material adjacent thereto, e.g., metal sandwiched between thin or thick film insulator or organic semiconductor material, and through which carrier tunneling occurs, and processes or apparatus adapted for the manufacture or treatment of such devices, or of parts thereof. This subclass is substantially the same in scope as ECLA classification H01L49/00. | |
E49.002 | . Devices using Mott metal-insulator transition, e.g., field-effect transistors (EPO): |
This subclass is indented under subclass E49.001. This subclass is substantially the same in scope as ECLA classification H01L49/00A. | |
E49.003 | . Quantum devices, e.g., quantum interference devices, metal single electron transistor (EPO): |
This subclass is indented under subclass E49.001. This subclass is substantially the same in scope as ECLA classification H01L49/00Q. | |
E49.004 | . Thin-film or thick-film devices (EPO): |
This subclass is indented under subclass E49.001. This subclass is substantially the same in scope as ECLA classification H01L49/02. | |
E21.001 | PROCESSES OR APPARATUS ADAPTED FOR MANUFACTURE OR TREATMENT OF SEMICONDUCTOR OR SOLID-STATE DEVICES OR OF PARTS THEREOF (EPO): |
This main group provides for processes or apparatus that
are employed in the manufacture or treatment of semiconductor or
solid-state devices or of parts thereof. This
subclass is substantially the same in scope as ECLA classification
H01L21/00.
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| |||||||||||
E21.002 | . Manufacture or treatment of semiconductor device (EPO): |
This subclass is indented under subclass E21.001. This subclass is substantially the same in scope as ECLA classification H01L21/02. | |
E21.003 | .. Manufacture of two-terminal component for integrated circuit (EPO): |
This subclass is indented under subclass E21.002. This
subclass is substantially the same in scope as ECLA classification
H01L21/02B.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.004 | ... Of resistor (EPO): |
This subclass is indented under subclass E21.003. This subclass is substantially the same in scope as ECLA classification H01L21/02B2. | |
E21.005 | .... Active material comprising carbon, e.g., diamond or diamond-like carbon (EPO): |
This subclass is indented under subclass E21.004. This subclass is substantially the same in scope as ECLA classification H01L21/02B2D. | |
E21.006 | .... Active material comprising refractory, transition, or noble metal or metal compound, e.g., alloy, silicide, oxide, nitride (EPO): |
This subclass is indented under subclass E21.004. This subclass is substantially the same in scope as ECLA classification H01L21/02B2M. | |
E21.007 | .... Active material comprising organic conducting material, e.g., conducting polymer (EPO): |
This subclass is indented under subclass E21.004. This subclass is substantially the same in scope as ECLA classification H01L21/02B2P. | |
E21.008 | ... Of capacitor (EPO): |
This subclass is indented under subclass E21.003. This subclass is substantially the same in scope as ECLA classification H01L21/02B3. | |
E21.009 | .... Dielectric having perovskite structure (EPO): |
This subclass is indented under subclass E21.008. This subclass is substantially the same in scope as ECLA classification H01L21/02B3B. | |
E21.01 | ..... Dielectric comprising two or more layers, e.g., buffer layers, seed layers, gradient layers (EPO): |
This subclass is indented under subclass E21.009. This subclass is substantially the same in scope as ECLA classification H01L21/02B3B2. | |
E21.011 | .... Formation of electrode (EPO): |
This subclass is indented under subclass E21.008. This subclass is substantially the same in scope as ECLA classification H01L21/02B3C. | |
E21.012 | ..... With increased surface area, e.g., by roughening, texturing (EPO): |
This subclass is indented under subclass E21.011. This subclass is substantially the same in scope as ECLA classification H01L21/02B3C2. | |
E21.013 | ...... With rough surface, e.g., using hemispherical grains (EPO): |
This subclass is indented under subclass E21.012. This subclass is substantially the same in scope as ECLA classification H01L21/02B3C2B. | |
E21.014 | ...... Having cylindrical, crown, or fin-type shape (EPO): |
This subclass is indented under subclass E21.012. This subclass is substantially the same in scope as ECLA classification H01L21/02B3C2D. | |
E21.015 | ...... Having horizontal extensions (EPO): |
This subclass is indented under subclass E21.012. This subclass is substantially the same in scope as ECLA classification H01L21/02B3C2H. | |
E21.016 | ....... Made by depositing layers, e.g., alternatingly conductive and insulating layers (EPO): |
This subclass is indented under subclass E21.015. This subclass is substantially the same in scope as ECLA classification H01L21/02B3C2H2. | |
E21.017 | ....... Made by patterning layers, e.g., etching conductive layers (EPO): |
This subclass is indented under subclass E21.015. This subclass is substantially the same in scope as ECLA classification H01L21/02B3C2H6. | |
E21.018 | ...... Having vertical extensions (EPO): |
This subclass is indented under subclass E21.012. This subclass is substantially the same in scope as ECLA classification H01L21/02B3C2V. | |
E21.019 | ....... Made by depositing layers, e.g., alternatingly conductive and insulating layers (EPO): |
This subclass is indented under subclass E21.018. This subclass is substantially the same in scope as ECLA classification H01L21/02B3C2V2. | |
E21.02 | ....... Made by patterning layers, e.g., etching conductive layers (EPO): |
This subclass is indented under subclass E21.018. This subclass is substantially the same in scope as ECLA classification H01L21/02B3C2V6. | |
E21.021 | ...... Having multilayers, e.g., comprising barrier layer and metal layer (EPO): |
This subclass is indented under subclass E21.012. This subclass is substantially the same in scope as ECLA classification H01L21/02B3C4. | |
E21.022 | ... Of inductor (EPO): |
This subclass is indented under subclass E21.003. This subclass is substantially the same in scope as ECLA classification H01L21/02B4. | |
E21.023 | .. Making mask on semicond uctor body for further photolithographic processing (EPO): |
This subclass is indented under subclass E21.002. This subclass is substantially the same in scope as ECLA classification H01L21/027. | |
E21.024 | ... Comprising organic layer (EPO): |
This subclass is indented under subclass E21.023. This subclass is substantially the same in scope as ECLA classification H01L21/027B. | |
E21.025 | .... For lift-off process (EPO): |
This subclass is indented under subclass E21.024. This subclass is substantially the same in scope as ECLA classification H01L21/027B2. | |
E21.026 | .... Characterized by treatment of photoresist layer (EPO): |
This subclass is indented under subclass E21.024. This subclass is substantially the same in scope as ECLA classification H01L21/027B6. | |
E21.027 | ..... Photolith ographic process (EPO): |
This subclass is indented under subclass E21.026. This subclass is substantially the same in scope as ECLA classification H01L21/027B6B. | |
E21.028 | ...... Using laser (EPO): |
This subclass is indented under subclass E21.027. This subclass is substantially the same in scope as ECLA classification H01L21/027B6B2. | |
E21.029 | ...... Using anti-reflective coating (EPO): |
This subclass is indented under subclass E21.027. This subclass is substantially the same in scope as ECLA classification H01L21/027B6B4. | |
E21.03 | ..... Electro-lithographic process (EPO): |
This subclass is indented under subclass E21.026. This subclass is substantially the same in scope as ECLA classification H01L21/027B6C. | |
E21.031 | ..... X-ray lithographic process (EPO): |
This subclass is indented under subclass E21.026. This subclass is substantially the same in scope as ECLA classification H01L21/027B6D. | |
E21.032 | ..... Ion lithographic process (EPO): |
This subclass is indented under subclass E21.026. This subclass is substantially the same in scope as ECLA classification H01L21/027B6E. | |
E21.033 | ... Comprising inorganic layer (EPO): |
This subclass is indented under subclass E21.023. This subclass is substantially the same in scope as ECLA classification H01L21/033. | |
E21.034 | .... For lift-off process (EPO): |
This subclass is indented under subclass E21.033. This subclass is substantially the same in scope as ECLA classification H01L21/033B. | |
E21.035 | .... Characterized by their composition, e.g., multilayer masks, materials (EPO): |
This subclass is indented under subclass E21.033. This subclass is substantially the same in scope as ECLA classification H01L21/033D. | |
E21.036 | .... Characterized by their size, orientation, disposition, behavior, shape, in horizontal or vertical plane (EPO): |
This subclass is indented under subclass E21.033. This subclass is substantially the same in scope as ECLA classification H01L21/033F. | |
E21.037 | ..... Characterized by their behavior during process, e.g., soluble mask, re-deposited mask (EPO): |
This subclass is indented under subclass E21.036. This subclass is substantially the same in scope as ECLA classification H01L21/033F2. | |
E21.038 | ..... Characterized by process involved to create mask, e.g., lift-off mask, sidewalls, or to modify mask, such as pre-treatment, post-treatment (EPO): |
This subclass is indented under subclass E21.036. This subclass is substantially the same in scope as ECLA classification H01L21/033F4. | |
E21.039 | ..... Process specially adapted to improve the resolution of the mask (EPO): |
This subclass is indented under subclass E21.036. This subclass is substantially the same in scope as ECLA classification H01L21/033F6. | |
E21.04 | .. Device having at least one potential-jump barrier or surface barrier, e.g., PN junction, depletion layer, carrier concentration layer (EPO): |
This subclass is indented under subclass E21.002. This subclass is substantially the same in scope as ECLA classification H01L21/04. | |
E21.041 | ... Device having semiconductor body comprising carbon, e.g., diamond, diamond-like carbon (EPO): |
This subclass is indented under subclass E21.04. This
subclass is substantially the same in scope as ECLA classification
H01L21/04D.
| |||
E21.042 | .... Making n- or p-doped regions (EPO): |
This subclass is indented under subclass E21.041. This subclass is substantially the same in scope as ECLA classification H01L21/04D10. | |
E21.043 | ..... Using ion im plantation (EPO): |
This subclass is indented under subclass E21.042. This subclass is substantially the same in scope as ECLA classification H01L21/04D10B. | |
E21.044 | .... Changing their shape, e.g., forming recess (EPO): |
This subclass is indented under subclass E21.041. This subclass is substantially the same in scope as ECLA classification H01L21/04D16. | |
E21.045 | .... Making electrode (EPO): |
This subclass is indented under subclass E21.041. This subclass is substantially the same in scope as ECLA classification H01L21/04D20. | |
E21.046 | ..... Ohmic electrode (EPO): |
This subclass is indented under subclass E21.045. This subclass is substantially the same in scope as ECLA classification H01L21/04D20A. | |
E21.047 | ..... Schottky electrode (EPO): |
This subclass is indented under subclass E21.045. This subclass is substantially the same in scope as ECLA classification H01L21/04D20C. | |
E21.048 | ..... Conductor-insulator-semiconductor electrode, e.g., MIS contacts (EPO): |
This subclass is indented under subclass E21.045. This subclass is substantially the same in scope as ECLA classification H01L21/04D20E. | |
E21.049 | .... Multistep processes for manufacture of device whose active layer, e.g., base, channel, comprises semiconducting carbon, e.g., diamond, diamond-like carbon (EPO): |
This subclass is indented under subclass E21.041. This subclass is substantially the same in scope as ECLA classification H01L21/04D40. | |
E21.05 | ..... Device controllable only by electric current supplied or the electric potential applied to electrode which does not carry current to be rectified, amplified, or switched, e.g., three-terminal devices such as source, drain, and gate terminals; emitter, base, collector terminals (EPO): |
This subclass is indented under subclass E21.049. This subclass is substantially the same in scope as ECLA classification H01L21/04D40B. | |
E21.051 | ...... Field-effect transistor (EPO): |
This subclass is indented under subclass E21.05. This subclass is substantially the same in scope as ECLA classification H01L21/04D40B2. | |
E21.052 | ..... Device controllable only by variation of electric current supplied or the electric potential applied to electrodes carrying current to be rectified, amplified, oscillated, or switched, e.g., two-terminal device (EPO): |
This subclass is indented under subclass E21.049. This subclass is substantially the same in scope as ECLA classification H01L21/04D40C. | |
E21.053 | ...... Diode (EPO): |
This subclass is indented under subclass E21.052. This subclass is substantially the same in scope as ECLA classification H01L21/04D40C2. | |
E21.054 | ... Device having semiconductor body comprising silicon carbide (SiC) (EPO): |
This subclass is indented under subclass E21.04. This subclass is substantially the same in scope as ECLA classification H01L21/04H. | |
E21.055 | .... Passivating silicon carbide surface (EPO): |
This subclass is indented under subclass E21.054. This subclass is substantially the same in scope as ECLA classification H01L21/04H2. | |
E21.056 | .... Making n- or p- doped regions or layers, e.g., using diffusion (EPO): |
This subclass is indented under subclass E21.054. This subclass is substantially the same in scope as ECLA classification H01L21/04H4. | |
E21.057 | ..... Using ion implantation (EPO): |
This subclass is indented under subclass E21.056. This
subclass is substantially the same in scope as ECLA classification
H01L21/04H4A.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.058 | ...... Using masks (EPO): |
This subclass is indented under subclass E21.057. This subclass is substantially the same in scope as ECLA classification H01L21/04H4A10. | |
E21.059 | ...... Angled implantation (EPO): |
This subclass is indented under subclass E21.057. This subclass is substantially the same in scope as ECLA classification H01L21/04H4A12. | |
E21.06 | .... Changing shape of semiconductor body, e.g., forming recesses (EPO): |
This subclass is indented under subclass E21.054. This subclass is substantially the same in scope as ECLA classification H01L21/04H6. | |
E21.061 | .... Making electrode (EPO): |
This subclass is indented under subclass E21.054. This subclass is substantially the same in scope as ECLA classification H01L21/04H10. | |
E21.062 | ..... Ohmic electrode (EPO): |
This subclass is indented under subclass E21.061. This subclass is substantially the same in scope as ECLA classification H01L21/04H10A. | |
E21.063 | ..... Conductor-insulator-semiconductor electrode, e.g., MIS contact (EPO): |
This subclass is indented under subclass E21.061. This subclass is substantially the same in scope as ECLA classification H01L21/04H10B. | |
E21.064 | ..... Schottky electrode (EPO): |
This subclass is indented under subclass E21.061. This subclass is substantially the same in scope as ECLA classification H01L21/04H10C. | |
E21.065 | .... Multistep processes for manufacture of device whose active layer, e.g., base, channel, comprises silicon carbide (EPO): |
This subclass is indented under subclass E21.054. This subclass is substantially the same in scope as ECLA classification H01L21/04H20. | |
E21.066 | ..... Device controllable only by electric current supplied or the electric potential applied to electrode which does not carry current to be rectified, amplified, or switched, e.g., three-terminal device (EPO): |
This subclass is indented under subclass E21.065. This subclass is substantially the same in scope as ECLA classification H01L21/04H20B. | |
E21.067 | ..... Device controllable only by variation of electric current supplied or electric potential applied to one or more of the electrodes carrying current to be rectified, amplified, oscillated, or switched, e.g., two-terminal device (EPO): |
This subclass is indented under subclass E21.065. This subclass is substantially the same in scope as ECLA classification H01L21/04H20C. | |
E21.068 | ... Device having semiconductor body comprising selenium (Se) or tellurium (Te) (EPO): |
This subclass is indented under subclass E21.04. This subclass is substantially the same in scope as ECLA classification H01L21/06. | |
E21.069 | .... Preparation of substrate or foundation plate for Se or Te semiconductor (EPO): |
This subclass is indented under subclass E21.068. This subclass is substantially the same in scope as ECLA classification H01L21/08. | |
E21.07 | .... Preliminary treatment of Se or Te, its application to substrate, or the subsequent treatment of combination (EPO): |
This subclass is indented under subclass E21.068. This subclass is substantially the same in scope as ECLA classification H01L21/10. | |
E21.071 | ..... Application of Se or Te to substrate or foundation plate (EPO): |
This subclass is indented under subclass E21.07. This subclass is substantially the same in scope as ECLA classification H01L21/10B. | |
E21.072 | ..... Conversion of Se or Te to conductive state (EPO): |
This subclass is indented under subclass E21.07. This subclass is substantially the same in scope as ECLA classification H01L21/103. | |
E21.073 | ..... Treatment of surface of Se or Te layer after having been made conductive (EPO): |
This subclass is indented under subclass E21.07. This subclass is substantially the same in scope as ECLA classification H01L21/105. | |
E21.074 | ..... Provision of discrete insulating layer, i.e., specified barrier layer material (EPO): |
This subclass is indented under subclass E21.07. This subclass is substantially the same in scope as ECLA classification H01L21/108. | |
E21.075 | .... Application of electrode to exposed surface of Se or Te after Se or Te has been applied to foundation plate (EPO): |
This subclass is indented under subclass E21.068. This subclass is substantially the same in scope as ECLA classification H01L21/12. | |
E21.076 | .... Treatment of complete device, e.g., by electroforming to form barrier (EPO): |
This subclass is indented under subclass E21.068. This subclass is substantially the same in scope as ECLA classification H01L21/14. | |
E21.077 | ..... Heat treating (EPO): |
This subclass is indented under subclass E21.076. This subclass is substantially the same in scope as ECLA classification H01L21/145. | |
E21.078 | ... Device having semiconductor body comprising cuprous oxide (Cu2O) or cuprous iodide (CuI) (EPO): |
This subclass is indented under subclass E21.04. This subclass is substantially the same in scope as ECLA classification H01L21/16. | |
E21.079 | .... Preparation of substrate, preliminary treatment oxidation of substrate, reduction treatment (EPO): |
This subclass is indented under subclass E21.078. This subclass is substantially the same in scope as ECLA classification H01L21/16B. | |
E21.08 | ..... Preliminary treatment of foundation plate (EPO): |
This subclass is indented under subclass E21.079. This subclass is substantially the same in scope as ECLA classification H01L21/16B2. | |
E21.081 | ..... Reduction of copper oxide, treatment of oxide layer (EPO): |
This subclass is indented under subclass E21.079. This subclass is substantially the same in scope as ECLA classification H01L21/16B4. | |
E21.082 | ..... Oxidation and subsequent heat treatment of substrate (EPO): |
This subclass is indented under subclass E21.079. This subclass is substantially the same in scope as ECLA classification H01L21/16B3. | |
E21.083 | ..... Application of specified conductive layer (EPO): |
This subclass is indented under subclass E21.079. This subclass is substantially the same in scope as ECLA classification H01L21/16B5. | |
E21.084 | .... Treatment of complete device, e.g., electroforming, heat treating (EPO): |
This subclass is indented under subclass E21.078. This subclass is substantially the same in scope as ECLA classification H01L21/16C. | |
E21.085 | ... Device having semiconductor body comprising Group IV elements or Group III-V compounds with or without impurities, e.g., doping materials (EPO): |
This subclass is indented under subclass E21.04. This
subclass is substantially the same in scope as ECLA classification
H01L21/18.
| |||
E21.086 | .... Intermixing or interdiffusion or disordering of Group III-V heterostructures, e.g., IILD (EPO): |
This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/18A. | |
E21.087 | .... Joining of semiconductor body for junction formation (EPO): |
This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/18B. | |
E21.088 | ..... By direct bonding (EPO): |
This subclass is indented under subclass E21.087. This subclass is substantially the same in scope as ECLA classification H01L21/18B2. | |
E21.089 | .... Multistep processes for manufacture of device using quantum interference effect, e.g., electrostatic Aharonov-Bohm effect (EPO): |
This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/18Q. | |
E21.09 | .... Deposition of semiconductor material on substrate, e.g., epitaxial growth, solid phase epitaxy (EPO): |
This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/20. | |
E21.091 | ..... Using physical deposition, e.g., vacuum deposition, sputtering (EPO): |
This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/203. | |
E21.092 | ...... Epitaxial deposition of Group IV element, e.g., Si, Ge (EPO): |
This subclass is indented under subclass E21.091. This subclass is substantially the same in scope as ECLA classification H01L21/203B. | |
E21.093 | ....... Deposition on semiconductor substrate being different from deposited semiconductor material; i.e., formation of heterojunctions (EPO): |
This subclass is indented under subclass E21.092. This subclass is substantially the same in scope as ECLA classification H01L21/203B2. | |
E21.094 | ....... Deposition on insulating or meta llic substrate (EPO): |
This subclass is indented under subclass E21.092. This subclass is substantially the same in scope as ECLA classification H01L21/203B3. | |
E21.095 | ....... Epitaxial deposition of diamond (EPO): |
This subclass is indented under subclass E21.092. This subclass is substantially the same in scope as ECLA classification H01L21/203B4. | |
E21.096 | ...... Deposition of diamond (EPO): |
This subclass is indented under subclass E21.091. This subclass is substantially the same in scope as ECLA classification H01L21/203A. | |
E21.097 | ...... Epitaxial deposition of Group III-V compound (EPO): |
This subclass is indented under subclass E21.091. This subclass is substantially the same in scope as ECLA classification H01L21/203C. | |
E21.098 | ....... Deposition on semiconductor substrate not being an Group III-V compound (EPO): |
This subclass is indented under subclass E21.097. This subclass is substantially the same in scope as ECLA classification H01L21/203C2. | |
E21.099 | ....... Deposition on insulating or metallic substrate (EPO): |
This subclass is indented under subclass E21.097. This subclass is substantially the same in scope as ECLA classification H01L21/203C3. | |
E21.1 | ....... Doping during epitaxial deposition (EPO): |
This subclass is indented under subclass E21.097. This subclass is substantially the same in scope as ECLA classification H01L21/203C6. | |
E21.101 | ..... Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (EPO): |
This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/205. | |
E21.102 | ...... Epitaxial deposition of Group IV elements, e.g., Si, Ge, C (EPO): |
This subclass is indented under subclass E21.101. This subclass is substantially the same in scope as ECLA classification H01L21/205B. | |
E21.103 | ....... Deposition on a semiconductor substrate which is different from the semiconductor material being deposited, i.e., formation of heterojunctions (EPO): |
This subclass is indented under subclass E21.102. This subclass is substantially the same in scope as ECLA classification H01L21/205B2. | |
E21.104 | ....... Deposition on an insulating or a metallic substrate (EPO): |
This subclass is indented under subclass E21.102. This subclass is substantially the same in scope as ECLA classification H01L21/205B3. | |
E21.105 | ....... Epitaxial deposition of diamond (EPO): |
This subclass is indented under subclass E21.102. This subclass is substantially the same in scope as ECLA classification H01L21/205B4. | |
E21.106 | ....... Doping during the epitaxial deposition (EPO): |
This subclass is indented under subclass E21.102. This subclass is substantially the same in scope as ECLA classification H01L21/205B6. | |
E21.107 | ...... Deposition of diamond (EPO): |
This subclass is indented under subclass E21.101. This subclass is substantially the same in scope as ECLA classification H01L21/205A. | |
E21.108 | ...... Epitaxial deposition of Group III-V compound (EPO): |
This subclass is indented under subclass E21.101. This subclass is substantially the same in scope as ECLA classification H01L21/205C. | |
E21.109 | ....... Using molecular beam technique (EPO): |
This subclass is indented under subclass E21.108. This subclass is substantially the same in scope as ECLA classification H01L21/205C4. | |
E21.11 | ....... Doping the epitaxial deposit (EPO): |
This subclass is indented under subclass E21.108. This subclass is substantially the same in scope as ECLA classification H01L21/205C6. | |
E21.111 | ........ Doping with transition metals to form semi-insulating layers (EPO): |
This subclass is indented under subclass E21.11. This subclass is substantially the same in scope as ECLA classification H01L21/205C6B. | |
E21.112 | ....... Deposition on a semiconductor substrate not being Group III-V compound (EPO): |
This subclass is indented under subclass E21.108. This subclass is substantially the same in scope as ECLA classification H01L21/205C2. | |
E21.113 | ....... Deposition on an insulating or a metallic substrate (EPO): |
This subclass is indented under subclass E21.108. This subclass is substantially the same in scope as ECLA classification H01L21/205C3. | |
E21.114 | ..... Using liquid deposition (EPO): |
This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/208. | |
E21.115 | ...... Epitaxial deposition of Group IV elements, e.g., Si, Ge, C (EPO): |
This subclass is indented under subclass E21.114. This subclass is substantially the same in scope as ECLA classification H01L21/208B. | |
E21.116 | ....... Deposition on a semiconductor substrate which is different from the semiconductor material being deposited, i.e., formation of heterojunction (EPO): |
This subclass is indented under subclass E21.115. This subclass is substantially the same in scope as ECLA classification H01L21/208B2. | |
E21.117 | ...... Epitaxial deposition of Group III-V compound (EPO): |
This subclass is indented under subclass E21.114. This subclass is substantially the same in scope as ECLA classification H01L21/208C. | |
E21.118 | ....... Deposition on a semiconductor substrate not being an Group III-V compound (EPO): |
This subclass is indented under subclass E21.117. This subclass is substantially the same in scope as ECLA classification H01L21/208C2. | |
E21.119 | ..... Characterized by the substrate (EPO): |
This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/20B. | |
E21.12 | ...... Characterized by the post-treatment used to control the interface betw een substrate and epitaxial layer, e.g., ion implantation followed by annealing (EPO): |
This subclass is indented under subclass E21.119. This subclass is substantially the same in scope as ECLA classification H01L21/20B20. | |
E21.121 | ...... Substrate is crystalline insulating material, e.g., sapphire (EPO): |
This subclass is indented under subclass E21.119. This subclass is substantially the same in scope as ECLA classification H01L21/20B4. | |
E21.122 | ...... Bonding of semiconductor wafer to insulating substrate or to semic onducting substrate using an intermediate insulating layer (EPO): |
This subclass is indented under subclass E21.119. This
subclass is substantially the same in scope as ECLA classification
H01L21/20B2.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.123 | ....... Substrate is crystalline semiconductor material, e.g., lattice adaptation, heteroepitaxy (EPO): |
This subclass is indented under subclass E21.119. This subclass is substantially the same in scope as ECLA classification H01L21/20B6. | |
E21.124 | ........ Heteroepitaxy (EPO): |
This subclass is indented under subclass E21.123. This subclass is substantially the same in scope as ECLA classification H01L21/20B6B. | |
E21.125 | ........ Defect and dislocati on suppression due to lattice mismatch, e.g., lattice adaptation (EPO): |
This subclass is indented under subclass E21.124. This subclass is substantially the same in scope as ECLA classification H01L21/20B6B2. | |
E21.126 | ........ Group III-V compound on dissimilar Group III-V compound (EPO): |
This subclass is indented under subclass E21.124. This subclass is substantially the same in scope as ECLA classification H01L21/20B6B4. | |
E21.127 | ........ Group III-V compound on Si or Ge (EPO): |
This subclass is indented under subclass E21.124. This subclass is substantially the same in scope as ECLA classification H01L21/20B6B6. | |
E21.128 | ........ Carbon on a noncarbon semiconductor substrate (EPO): |
This subclass is indented under subclass E21.124. This subclass is substantially the same in scope as ECLA classification H01L21/20B6B10. | |
E21.129 | ...... Group IVA, e.g., Si, C, Ge on Group IVB, e.g., Ti, Zr (EPO): |
This subclass is indented under subclass E21.124. This subclass is substantially the same in scope as ECLA classification H01L21/20B6B8. | |
E21.13 | ...... The substrate is crystalline conducting material, e.g., metallic silicide (EPO): |
This subclass is indented under subclass E21.119. This subclass is substantially the same in scope as ECLA classification H01L21/20B8. | |
E21.131 | ..... Selective epilaxial growth, e.g., simultaneous deposition of mono- and non-mono semiconductor material (EPO): |
This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/20C. | |
E21.132 | ...... Preparation of substrate for selective epitaxy (EPO) : |
This subclass is indented under subclass E21.131. This subclass is substantially the same in scope as ECLA classification H01L21/20C2. | |
E21.133 | ..... Epitaxial re-growth of non-monocrystalline semiconductor material, e.g., lateral epitaxy by seeded solidific ation, solid-state crystallization, solid-state graphoepitaxy, explosive crystallization, grain growth in polycrystalline material (EPO): |
This subclass is indented under subclass E21.09. This subclass is substantially the same in scope as ECLA classification H01L21/20D. | |
E21.134 | ...... Using a coherent energy beam, e.g., laser or electron beam (EPO): |
This subclass is indented under subclass E21.133. This subclass is substantially the same in scope as ECLA classification H01L21/20D2. | |
E21.135 | .... Diffusion of impurity material, e.g., doping material, electrode material, into or out of a semiconductor body, or between semiconductor regions; interactions between two or more impurities; redistribution of impurities (EPO): |
This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/22. | |
E21.136 | ..... From the substrate during epitaxy, e.g., autodoping; preventing or using autodoping (EPO): |
This subclass is indented under subclass E21.135. This subclass is substantially the same in scope as ECLA classification H01L21/22C. | |
E21.137 | ..... To control carrier lifetime, i.e., deep level dopant (EPO): |
This subclass is indented under subclass E21.135. This subclass is substantially the same in scope as ECLA classification H01L21/22D. | |
E21.138 | ...... In Group III-V compound (EPO): |
This subclass is indented under subclass E21.137. This subclass is substantially the same in scope as ECLA classification H01L21/22D2. | |
E21.139 | ..... Lithium-drift (EPO): |
This subclass is indented under subclass E21.135. This subclass is substantially the same in scope as ECLA classification H01L21/22L. | |
E21.14 | ..... Diffusion source (EPO): |
This subclass is indented under subclass E21.135. This subclass is substantially the same in scope as ECLA classification H01L21/22N. | |
E21.141 | ..... Using diffusion into or out of a solid from or into a gaseous phase (EPO): |
This subclass is indented under subclass E21.135. This
subclass is substantially the same in scope as ECLA classification
H01L21/223.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.142 | ...... Diffusion into or out of Group III-V compound (EPO): |
This subclass is indented under subclass E21.141. This subclass is substantially the same in scope as ECLA classification H01L21/223B. | |
E21.143 | ...... From or into plasma phase (EPO): |
This subclass is indented under subclass E21.141. This subclass is substantially the same in scope as ECLA classification H01L21/223E. | |
E21.144 | ..... Using diffusion into or out of a solid from or into a solid phase, e.g., a doped oxide layer (EPO): |
This subclass is indented under subclass E21.135. This subclass is substantially the same in scope as ECLA classification H01L21/225. | |
E21.145 | ...... Diffusion into or out of Group IV semiconductor (EPO): |
This subclass is indented under subclass E21.144. This subclass is substantially the same in scope as ECLA classification H01L21/225A. | |
E21.146 | ....... Using predeposition of impurities into the semiconductor surface, e.g., from gaseous phase (EPO): |
This subclass is indented under subclass E21.145. This subclass is substantially the same in scope as ECLA classification H01L21/225A2. | |
E21.147 | ........ By ion implantation (EPO): |
This subclass is indented under subclass E21.146. This subclass is substantially the same in scope as ECLA classification H01L21/225A2D. | |
E21.148 | ....... From or through or into an applied layer, e.g., photoresist, nitride (EPO): |
This subclass is indented under subclass E21.145. This subclass is substantially the same in scope as ECLA classification H01L21/225A4. | |
E21.149 | ........ Applied layer is oxide, e.g., P2O5, PSG, H3 BO3, doped oxide (EPO): |
This subclass is indented under subclass E21.148. This subclass is substantially the same in scope as ECLA classification H01L21/225A4D. | |
E21.15 | ......... Through the applied layer (EPO): |
This subclass is indented under subclass E21.149. This subclass is substantially the same in scope as ECLA classification H01L21/225A4D2. | |
E21.151 | ........ Applied layer being silicon or silicide or SIPOS, e.g., polysilicon, porous silicon (EPO): |
This subclass is indented under subclass E21.148. This subclass is substantially the same in scope as ECLA classification H01L21/225A4F. | |
E21.152 | ...... Diffusion into or out of Group III-V compound (EPO): |
This subclass is indented under subclass E21.144. This subclass is substantially the same in scope as ECLA classification H01L21/225B. | |
E21.153 | ..... Using diffusion into or out of a solid from or into a liquid phase, e.g., alloy diffusion process (EPO): |
This subclass is indented under subclass E21.135. This subclass is substantially the same in scope as ECLA classification H01L21/228. | |
E21.154 | .... Alloying of impurity material, e.g., doping material, electrode material, with a semiconductor body (EPO): |
This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/24. | |
E21.155 | ..... Alloying of doping material with Group III-V compound (EPO): |
This subclass is indented under subclass E21.154. This subclass is substantially the same in scope as ECLA classification H01L21/24B. | |
E21.156 | ..... Alloying of electrode material (EPO): |
This subclass is indented under subclass E21.154. This subclass is substantially the same in scope as ECLA classification H01L21/24C. | |
E21.157 | ...... With Group III-V compound (EPO): |
This subclass is indented under subclass E21.156. This subclass is substantially the same in scope as ECLA classification H01L21/24C2. | |
E21.158 | .... Manufacture of electrode on semiconductor body using process other than by epitaxial growth, diffusion of impurities, alloying of impurity materials, or radiation bombardment (EPO): |
This subclass is indented under subclass E21.085. This
subclass is substantially the same in scope as ECLA classification
H01L21/28.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||||||||
E21.159 | ..... Deposition of conductive or insulating material for electrode conducting electric current (EPO): |
This subclass is indented under subclass E21.158. This subclass is substantially the same in scope as ECLA classification H01L21/283. | |
E21.16 | ...... From a gas or vapor, e.g., condensation (EPO): |
This subclass is indented under subclass E21.159. This subclass is substantially the same in scope as ECLA classification H01L21/285. | |
E21.161 | ....... Of conductive layer (EPO): |
This subclass is indented under subclass E21.16. This subclass is substantially the same in scope as ECLA classification H01L21/285B. | |
E21.162 | ........ On semiconductor body comprising Group IV element (EPO): |
This subclass is indented under subclass E21.161. This subclass is substantially the same in scope as ECLA classification H01L21/285B4. | |
E21.163 | ......... Deposition of Schottky electrode (EPO): |
This subclass is indented under subclass E21.162. This subclass is substantially the same in scope as ECLA classification H01L21/285B4C. | |
E21.164 | ......... O layer comprising silicide (EPO): |
This subclass is indented under subclass E21.162. This subclass is substantially the same in scope as ECLA classification H01L21/285B4D. | |
E21.165 | ......... Conductive layer comprising silicide (EPO): |
This subclass is indented under subclass E21.162. This subclass is substantially the same in scope as ECLA classification H01L21/285B4A. | |
E21.166 | ......... Conductive layer comprising semiconducting material (EPO): |
This subclass is indented under subclass E21.162. This subclass is substantially the same in scope as ECLA classification H01L21/285B4B. | |
E21.167 | .......... Making of side-wall contact (EPO): |
This subclass is indented under subclass E21.166. This subclass is substantially the same in scope as ECLA classification H01L21/285B4B2. | |
E21.168 | ......... Conductive layer comprising transition metal, e.g., Ti, W, Mo (EPO): |
This subclass is indented under subclass E21.162. This subclass is substantially the same in scope as ECLA classification H01L21/285B4L. | |
E21.169 | ......... By physical means, e.g., sputtering, evaporation (EPO): |
This subclass is indented under subclass E21.162. This subclass is substantially the same in scope as ECLA classification H01L21/285B4F. | |
E21.17 | ......... By chemical means, e.g., CVD, LPCVD, PECVD, laser CVD (EPO): |
This subclass is indented under subclass E21.162. This subclass is substantially the same in scope as ECLA classification H01L21/285B4H. | |
E21.171 | .......... Selective deposition (EPO): |
This subclass is indented under subclass E21.17. This subclass is substantially the same in scope as ECLA classification H01L21/285B4H2. | |
E21.172 | ........ On semiconductor body comprising Group III-V compound (EPO): |
This subclass is indented under subclass E21.161. This subclass is substantially the same in scope as ECLA classification H01L21/285B6. | |
E21.173 | ......... Deposition of Schottky electrode (EPO): |
This subclass is indented under subclass E21.172. This subclass is substantially the same in scope as ECLA classification H01L21/285B6B. | |
E21.174 | ...... From a liquid, e.g., electrolytic deposition (EPO): |
This subclass is indented under subclass E21.159. This subclass is substantially the same in scope as ECLA classification H01L21/288. | |
E21.175 | ....... Using an external electrical current, i.e., electro-deposition (EPO): |
This subclass is indented under subclass E21.174. This subclass is substantially the same in scope as ECLA classification H01L21/288E. | |
E21.176 | ..... Manufacture or post-treatment of electrode having a capacitive structure, i.e., gate structure for field-effect device (EPO): |
This subclass is indented under subclass E21.158. This subclass is substantially the same in scope as ECLA classification H01L21/28B. | |
E21.177 | ...... MOS-gate structure (EPO): |
This subclass is indented under subclass E21.176. This subclass is substantially the same in scope as ECLA classification H01L21/28B2. | |
E21.178 | ....... Joint-gate structure (EPO): |
This subclass is indented under subclass E21.177. This subclass is substantially the same in scope as ECLA classification H01L21/28B2C. | |
E21.179 | ....... Floating or plural gate structure (EPO): |
This subclass is indented under subclass E21.177. This subclass is substantially the same in scope as ECLA classification H01L21/28B2D. | |
E21.18 | ....... Gate structure with charge-trapping insulator (EPO): |
This subclass is indented under subclass E21.177. This subclass is substantially the same in scope as ECLA classification H01L21/28B2E. | |
E21.181 | ....... On semiconductor body not comprising Group IV element, e.g., Group III-V compound (EPO): |
This subclass is indented under subclass E21.177. This subclass is substantially the same in scope as ECLA classification H01L21/28B2F. | |
E21.182 | ....... On semiconductor body comprising Group IV element excluding non-elemental Si, e.g., Ge, C, diamond, silicon compound or compound, such as SiC or SiGe (EPO): |
This subclass is indented under subclass E21.177. This subclass is substantially the same in scope as ECLA classification H01L21/28B2G. | |
E21.183 | ....... For charge-coupled device (EPO): |
This subclass is indented under subclass E21.177. This subclass is substantially the same in scope as ECLA classification H01L21/28B2K. | |
E21.184 | ...... PN-homojunction gate structure (EPO): |
This subclass is indented under subclass E21.176. This subclass is substantially the same in scope as ECLA classification H01L21/28B3. | |
E21.185 | ....... For charge-coupled device (EPO): |
This subclass is indented under subclass E21.184. This subclass is substantially the same in scope as ECLA classification H01L21/28B3K. | |
E21.186 | ...... Schottky gate structure (EPO): |
This subclass is indented under subclass E21.176. This subclass is substantially the same in scope as ECLA classification H01L21/28B4. | |
E21.187 | ....... For charge-coupled device (EPO): |
This subclass is indented under subclass E21.186. This subclass is substantially the same in scope as ECLA classification H01L21/28B4K. | |
E21.188 | ...... Heterojunction gate structure (EPO): |
This subclass is indented under subclass E21.176. This subclass is substantially the same in scope as ECLA classification H01L21/28B5. | |
E21.189 | ....... For charge-coupled device (EPO): |
This subclass is indented under subclass E21.188. This subclass is substantially the same in scope as ECLA classification H01L21/28B5K. | |
E21.19 | ..... Making electrode structure comprising conductor-insulator-semiconductor, e.g., MIS gate (EPO): |
This subclass is indented under subclass E21.158. This subclass is substantially the same in scope as ECLA classification H01L21/28E. | |
E21.191 | ...... Insulator formed on silicon semiconductor body (EPO): |
This subclass is indented under subclass E21.19. This subclass is substantially the same in scope as ECLA classification H01L21/28E2. | |
E21.192 | ....... Characterized by insulator (EPO): |
This subclass is indented under subclass E21.191. This subclass is substantially the same in scope as ECLA classification H01L21/28E2C. | |
E21.193 | ........ On single crystalline silicon (EPO): |
This subclass is indented under subclass E21.192. This subclass is substantially the same in scope as ECLA classification H01L21/28E2C2. | |
E21.194 | ......... Characterized by treatment after formation of definitive gate conductor (EPO): |
This subclass is indented under subclass E21.193. This subclass is substantially the same in scope as ECLA classification H01L21/28E2C2B. | |
E21.195 | ....... Characterized by conductor (EPO): |
This subclass is indented under subclass E21.191. This
subclass is substantially the same in scope as ECLA classification
H01L21/28E2B.
| |||
E21.196 | ........ Final conductor next to insulator having lateral composition or doping variation, or being formed laterally by more than one deposition step (EPO): |
This subclass is indented under subclass E21.195. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B8. | |
E21.197 | ........ Final conductor layer next to insulator being silicon e.g., polysilicon, with or without impurities (EPO): |
This subclass is indented under subclass E21.195. This
subclass is substantially the same in scope as ECLA classification
H01L21/28E2B2.
| |||
E21.198 | ......... Conductor comprising at least another nonsilicon conductive layer (EPO): |
This subclass is indented under subclass E21.197. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B2P. | |
E21.199 | .......... Conductor comprising silicide layer formed by silicidation reaction of silicon with metal layer (EPO): |
This subclass is indented under subclass E21.198. This
subclass is substantially the same in scope as ECLA classification
H01L21/28E2B2P3.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.2 | .......... Conductor comprising metal or metallic silicide formed by deposition e.g., sputter deposition, i.e., without silicidation reaction (EPO): |
This subclass is indented under subclass E21.198. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B2P4. | |
E21.201 | ........ Conductor layer next to insulator is Si or Ge or C and their non-Si alloys (EPO): |
This subclass is indented under subclass E21.195. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B4. | |
E21.202 | ........ Conductor layer next to the insulator is single metal, e.g., Ta, W, Mo, Al (EPO): |
This subclass is indented under subclass E21.195. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B5. | |
E21.203 | ........ Conductor layer next to insulator is metallic silicide (Me Si) (EPO): |
This subclass is indented under subclass E21.195. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B7. | |
E21.204 | ........ Conductor layer next to insulator is non-Me Si composite or compound, e.g., TiN (EPO): |
This subclass is indented under subclass E21.195. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B6. | |
E21.205 | ........ Characterized by sectional shape, e.g., T-shape, inverted T, spacer (EPO): |
This subclass is indented under subclass E21.195. This subclass is substantially the same in scope as ECLA classification H01L21/28E2B20. | |
E21.206 | ........ Lithography, isolation, or planarization-related aspects of making conductor-insulator-semiconductor structure, e.g., sub-lithography lengths; to solve problems arising at crossing with side of device isolation (EPO): |
This subclass is indented under subclass E21.195. This
subclass is substantially the same in scope as ECLA classification
H01L21/28E2B30.
| |||
E21.207 | ...... Insulator formed on nonelemental silicon semiconductor body, e.g., Ge, SiGe, SiGeC (EPO): |
This subclass is indented under subclass E21.19. This subclass is substantially the same in scope as ECLA classification H01L21/28E3. | |
E21.208 | ..... Comprising layer having ferroelectric properties (EPO): |
This subclass is indented under subclass E21.158. This subclass is substantially the same in scope as ECLA classification H01L21/28K. | |
E21.209 | ..... Making electrode structure comprising conductor-insulator-conductor-insulator-semiconductor, e.g., gate stack for non-volatile memory (EPO): |
This subclass is indented under subclass E21.158. This subclass is substantially the same in scope as ECLA classification H01L21/28F. | |
E21.21 | ..... Comprising charge trapping insulator (EPO): |
This subclass is indented under subclass E21.158. This subclass is substantially the same in scope as ECLA classification H01L21/28G. | |
E21.211 | .... Treatment of semiconductor body using process other than deposition of semiconductor material on a substrate, diffusion or alloying of impurity material, or radiation treatment (EPO): |
This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/30. | |
E21.212 | ..... Hydrogenation or deuterization, e.g., using atomic hydrogen or deuterium from a plasma (EPO): |
This subclass is indented under subclass E21.211. This subclass is substantially the same in scope as ECLA classification H01L21/30H. | |
E21.213 | ...... Of Group III-V compound (EPO): |
This subclass is indented under subclass E21.212. This subclass is substantially the same in scope as ECLA classification H01L21/30H8. | |
E21.214 | ..... To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (EPO): |
This subclass is indented under subclass E21.211. This subclass is substantially the same in scope as ECLA classification H01L21/302. | |
E21.215 | ...... Chemical or electrical treatment, e.g., electrolytic etching (EPO): |
This subclass is indented under subclass E21.214. This
subclass is substantially the same in scope as ECLA classification
H01L21/306.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.216 | ....... Electrolytic etching (EPO): |
This subclass is indented under subclass E21.215. This subclass is substantially the same in scope as ECLA classification H01L21/3063. | |
E21.217 | ........ Of Group III-V compound (EPO): |
This subclass is indented under subclass E21.216. This subclass is substantially the same in scope as ECLA classification H01L21/3063B. | |
E21.218 | ....... Plasma etching; reactive-ion etching (EPO): |
This subclass is indented under subclass E21.215. This subclass is substantially the same in scope as ECLA classification H01L21/3065. | |
E21.219 | ....... Chemical etching (EPO): |
This subclass is indented under subclass E21.215. This subclass is substantially the same in scope as ECLA classification H01L21/306B. | |
E21.22 | ........ Etching of Group III-V compound (EPO): |
This subclass is indented under subclass E21.219. This subclass is substantially the same in scope as ECLA classification H01L21/306B4. | |
E21.221 | ......... Anisotropic liquid etching (EPO): |
This subclass is indented under subclass E21.22. This subclass is substantially the same in scope as ECLA classification H01L21/306B4B. | |
E21.222 | ......... Vapor phase etching (EPO): |
This subclass is indented under subclass E21.22. This subclass is substantially the same in scope as ECLA classification H01L21/306B4C. | |
E21.223 | ........ Anisotropic liquid etching (EPO): |
This subclass is indented under subclass E21.219. This subclass is substantially the same in scope as ECLA classification H01L21/306B3. | |
E21.224 | ....... Chemical cleaning (EPO): |
This subclass is indented under subclass E21.215. This subclass is substantially the same in scope as ECLA classification H01L21/306N. | |
E21.225 | ........ Cleaning diamond or graphite (EPO): |
This subclass is indented under subclass E21.224. This subclass is substantially the same in scope as ECLA classification H01L21/306N8. | |
E21.226 | ........ Dry cleaning (EPO): |
This subclass is indented under subclass E21.224. This subclass is substantially the same in scope as ECLA classification H01L21/306N2. | |
E21.227 | ......... With gaseous hydrogen fluoride (HF) (EPO): |
This subclass is indented under subclass E21.226. This subclass is substantially the same in scope as ECLA classification H01L21/306N2B. | |
E21.228 | ........ Wet cleaning only (EPO): |
This subclass is indented under subclass E21.224. This subclass is substantially the same in scope as ECLA classification H01L21/306N4. | |
E21.229 | ........ Combining dry and wet cleaning steps (EPO): |
This subclass is indented under subclass E21.224. This subclass is substantially the same in scope as ECLA classification H01L21/306N6. | |
E21.23 | ....... With simultaneous mechanical treatment, e.g., chemical-mechanical polishing (EPO): |
This subclass is indented under subclass E21.215. This subclass is substantially the same in scope as ECLA classification H01L21/306P. | |
E21.231 | ....... Using mask (EPO): |
This subclass is indented under subclass E21.215. This subclass is substantially the same in scope as ECLA classification H01L21/308. | |
E21.232 | ........ Characterized by their composition, e.g., multilayer masks, materials (EPO): |
This subclass is indented under subclass E21.231. This subclass is substantially the same in scope as ECLA classification H01L21/308B. | |
E21.233 | ........ Characterized by their size, orientation, disposition, behavior, shape, in horizontal or vertical plane (EPO): |
This subclass is indented under subclass E21.231. This subclass is substantially the same in scope as ECLA classification H01L21/308D. | |
E21.234 | ......... Characterized by their behavior during process, e.g., soluble mask, redeposited mask (EPO): |
This subclass is indented under subclass E21.233. This subclass is substantially the same in scope as ECLA classification H01L21/308D2. | |
E21.235 | ......... Characterized by process involved to create mask, e.g., lift-off mask, sidewall, or to modify the mask, e.g., pre-treatment, post-treatment (EPO): |
This subclass is indented under subclass E21.233. This subclass is substantially the same in scope as ECLA classification H01L21/308D4. | |
E21.236 | ......... Process specially adapted to improve resolution of mask (EPO): |
This subclass is indented under subclass E21.233. This subclass is substantially the same in scope as ECLA classification H01L21/308D6. | |
E21.237 | ...... Mechanical treatment, e.g., grinding, polishing, cutting (EPO): |
This subclass is indented under subclass E21.214. This subclass is substantially the same in scope as ECLA classification H01L21/304. | |
E21.238 | ....... Making grooves, e.g., cutting (EPO): |
This subclass is indented under subclass E21.237. This subclass is substantially the same in scope as ECLA classification H01L21/304B. | |
E21.239 | ....... Using abrasion, e.g., sand-blasting (EPO): |
This subclass is indented under subclass E21.237. This subclass is substantially the same in scope as ECLA classification H01L21/304D. | |
E21.24 | ...... To form insulating layer thereon, e.g., for masking or by using photolithographic technique (EPO): |
This subclass is indented under subclass E21.214.
This subclass is substantially the same in scope as ECLA classification
H01L21/31.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
E21.241 | ....... Post-treatment (EPO): |
This subclass is indented under subclass E21.24. This subclass is substantially the same in scope as ECLA classification H01L21/3105. | |
E21.242 | ........ Of organic layer (EPO): |
This subclass is indented under subclass E21.241. This subclass is substantially the same in scope as ECLA classification H01L21/3105P. | |
E21.243 | ........ Planarization of insulating layer (EPO): |
This subclass is indented under subclass E21.241. This subclass is substantially the same in scope as ECLA classification H01L21/3105B. | |
E21.244 | ......... Involving dielectric removal step (EPO): |
This subclass is indented under subclass E21.243. This subclass is substantially the same in scope as ECLA classification H01L21/3105B2. | |
E21.245 | .......... Removal by chemical etching, e.g., dry etching (EPO): |
This subclass is indented under subclass E21.244. This
subclass is substantially the same in scope as ECLA classification
H01L21/3105B2B.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.246 | ........... Removal by selective chemical etching, e.g., selective dry etching through mask (EPO): |
This subclass is indented under subclass E21.245. This subclass is substantially the same in scope as ECLA classification H01L21/3105B2B2. | |
E21.247 | ........ Doping insulating layer (EPO): |
This subclass is indented under subclass E21.241. This subclass is substantially the same in scope as ECLA classification H01L21/3115. | |
E21.248 | ......... By ion implantation (EPO): |
This subclass is indented under subclass E21.247. This subclass is substantially the same in scope as ECLA classification H01L21/3115B. | |
E21.249 | ........ Etching insulating layer by chemical or physical means (EPO): |
This subclass is indented under subclass E21.241. This subclass is substantially the same in scope as ECLA classification H01L21/311. | |
E21.25 | ......... Etching inorganic layer (EPO): |
This subclass is indented under subclass E21.249. This subclass is substantially the same in scope as ECLA classification H01L21/311B. | |
E21.251 | .......... By chemical means (EPO): |
This subclass is indented under subclass E21.25. This subclass is substantially the same in scope as ECLA classification H01L21/311B2. | |
E21.252 | ........... By dry-etching (EPO): |
This subclass is indented under subclass E21.251. This subclass is substantially the same in scope as ECLA classification H01L21/311B2B. | |
E21.253 | ............ Of layers not containing Si, e.g., PZT, Al2O3 (EPO): |
This subclass is indented under subclass E21.252. This subclass is substantially the same in scope as ECLA classification H01L21/311B2B2. | |
E21.254 | ......... Etching organic layer (EPO): |
This subclass is indented under subclass E21.249. This subclass is substantially the same in scope as ECLA classification H01L21/311C. | |
E21.255 | .......... By chemical means (EPO): |
This subclass is indented under subclass E21.254. This subclass is substantially the same in scope as ECLA classification H01L21/311C2. | |
E21.256 | ........... By dry-etching (EPO): |
This subclass is indented under subclass E21.255. This subclass is substantially the same in scope as ECLA classification H01L21/311C2B. | |
E21.257 | ......... Using mask (EPO): |
This subclass is indented under subclass E21.249. This subclass is substantially the same in scope as ECLA classification H01L21/311D. | |
E21.258 | ....... Using masks (EPO): |
This subclass is indented under subclass E21.24. This subclass is substantially the same in scope as ECLA classification H01L21/32. | |
E21.259 | ....... Organic layers, e.g., photoresist (EPO): |
This subclass is indented under subclass E21.24. This subclass is substantially the same in scope as ECLA classification H01L21/312. | |
E21.26 | ........ Layer comprising organo-silicon compound (EPO): |
This subclass is indented under subclass E21.259. This subclass is substantially the same in scope as ECLA classification H01L21/312B. | |
E21.261 | ......... Layer comprising polysiloxane compound (EPO): |
This subclass is indented under subclass E21.26. This subclass is substantially the same in scope as ECLA classification H01L21/312B2. | |
E21.262 | .......... Layer comprising hydrogen silsesquioxane (EPO): |
This subclass is indented under subclass E21.261. This subclass is substantially the same in scope as ECLA classification H01L21/312B2B. | |
E21.263 | .......... Layer comprising silazane compounds (EPO): |
This subclass is indented under subclass E21.261. This subclass is substantially the same in scope as ECLA classification H01L21/312B4. | |
E21.264 | ........ Layers comprising fluoro hydrocarbon compounds, e.g., polytetrafluoroethylene (EPO): |
This subclass is indented under subclass E21.259. This subclass is substantially the same in scope as ECLA classification H01L21/312F. | |
E21.265 | ........ By Langmuir-Blodgett technique (EPO): |
This subclass is indented under subclass E21.259. This subclass is substantially the same in scope as ECLA classification H01L21/312L. | |
E21.266 | ....... Inorganic layer (EPO): |
This subclass is indented under subclass E21.24. This subclass is substantially the same in scope as ECLA classification H01L21/314. | |
E21.267 | ........ Composed of alternated layers or of mixtures of nitrides and oxides or of oxynitrides, e.g., formation of oxynitride by oxidation of nitride layer (EPO): |
This subclass is indented under subclass E21.266. This subclass is substantially the same in scope as ECLA classification H01L21/314B. | |
E21.268 | ........ Of silicon (EPO): |
This subclass is indented under subclass E21.266. This subclass is substantially the same in scope as ECLA classification H01L21/314B1. | |
E21.269 | ......... Formed by deposition from a gas or vapor (EPO): |
This subclass is indented under subclass E21.268. This subclass is substantially the same in scope as ECLA classification H01L21/314B2. | |
E21.27 | ........ Carbon layer, e.g., diamond-like layer (EPO): |
This subclass is indented under subclass E21.266. This subclass is substantially the same in scope as ECLA classification H01L21/314C. | |
E21.271 | ........ Composed of oxide or glassy oxide or oxide based glass (EPO): |
This subclass is indented under subclass E21.266. This subclass is substantially the same in scope as ECLA classification H01L21/316. | |
E21.272 | ......... With perovskite structure (EPO): |
This subclass is indented under subclass E21.271. This subclass is substantially the same in scope as ECLA classification H01L21/316D. | |
E21.273 | ......... Deposition of porous oxide or porous glassy oxide or oxide based porous glass (EPO): |
This subclass is indented under subclass E21.271. This subclass is substantially the same in scope as ECLA classification H01L21/316P. | |
E21.274 | ......... Deposition from gas or vapor (EPO): |
This subclass is indented under subclass E21.271. This subclass is substantially the same in scope as ECLA classification H01L21/316B. | |
E21.275 | .......... Deposition of boron or phosphorus doped silicon oxide, e.g., BSG, PSG, BPSG (EPO): |
This subclass is indented under subclass E21.274. This subclass is substantially the same in scope as ECLA classification H01L21/316B4. | |
E21.276 | .......... Deposition of halogen doped silicon oxide, e.g., fluorine doped silicon oxide (EPO): |
This subclass is indented under subclass E21.274. This subclass is substantially the same in scope as ECLA classification H01L21/316B6. | |
E21.277 | .......... Deposition of carbon doped silicon oxide, e.g., SiOC (EPO): |
This subclass is indented under subclass E21.274. This subclass is substantially the same in scope as ECLA classification H01L21/316B8. | |
E21.278 | .......... Deposition of silicon oxide (EPO): |
This subclass is indented under subclass E21.274. This subclass is substantially the same in scope as ECLA classification H01L21/316B2. | |
E21.279 | ........... On silicon body (EPO): |
This subclass is indented under subclass E21.278. This subclass is substantially the same in scope as ECLA classification H01L21/316B2B. | |
E21.28 | .......... Deposition of aluminum oxide (EPO): |
This subclass is indented under subclass E21.274. This subclass is substantially the same in scope as ECLA classification H01L21/316B3. | |
E21.281 | ........... On a silicon body (EPO): |
This subclass is indented under subclass E21.28. This subclass is substantially the same in scope as ECLA classification H01L21/316B3B. | |
E21.282 | ......... Formed by oxidation (EPO): |
This subclass is indented under subclass E21.271. This subclass is substantially the same in scope as ECLA classification H01L21/316C. | |
E21.283 | .......... Of semiconductor material, e.g., by oxidation of semiconductor body itself (EPO): |
This subclass is indented under subclass E21.282. This subclass is substantially the same in scope as ECLA classification H01L21/316C2. | |
E21.284 | ........... By thermal oxidation (EPO): |
This subclass is indented under subclass E21.283. This subclass is substantially the same in scope as ECLA classification H01L21/316C2B. | |
E21.285 | ............ Of silicon (EPO): |
This subclass is indented under subclass E21.284. This subclass is substantially the same in scope as ECLA classification H01L21/316C2B2. | |
E21.286 | ............ Of Group III-V compound (EPO): |
This subclass is indented under subclass E21.284. This subclass is substantially the same in scope as ECLA classification H01L21/316C2B3. | |
E21.287 | ........... By anodic oxidation (EPO): |
This subclass is indented under subclass E21.283. This subclass is substantially the same in scope as ECLA classification H01L21/316C2C. | |
E21.288 | ............ Of silicon (EPO): |
This subclass is indented under subclass E21.287. This subclass is substantially the same in scope as ECLA classification H01L21/316C2C2. | |
E21.289 | ............ Of Group III-V compound (EPO) : |
This subclass is indented under subclass E21.287. This subclass is substantially the same in scope as ECLA classification H01L21/316C2C3. | |
E21.29 | .......... Of metallic layer, e.g., Al deposited on body, e.g., formation of multi-layer insulating structures (EPO): |
This subclass is indented under subclass E21.282. This subclass is substantially the same in scope as ECLA classification H01L21/316C3. | |
E21.291 | ........... By anodic oxidation (EPO): |
This subclass is indented under subclass E21.29. This subclass is substantially the same in scope as ECLA classification H01L21/316C3B. | |
E21.292 | ........ Inorganic layer composed of nitride (EPO): |
This subclass is indented under subclass E21.266. This subclass is substantially the same in scope as ECLA classification H01L21/318. | |
E21.293 | ......... Of silicon nitride (EPO): |
This subclass is indented under subclass E21.292. This subclass is substantially the same in scope as ECLA classification H01L21/318B. | |
E21.294 | ...... Deposition/post-treatment of noninsulating, e.g., conductive - or resistive - layers on insulating layers (EPO): |
This subclass is indented under subclass E21.214.
This subclass is substantially the same in scope as ECLA classification
H01L21/3205.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.295 | ....... Deposition of layer comprising metal, e.g., metal, alloys, metal compounds (EPO): |
This subclass is indented under subclass E21.294. This subclass is substantially the same in scope as ECLA classification H01L21/3205M. | |
E21.296 | ........ Of metal-silicide layer (EPO): |
This subclass is indented under subclass E21.295. This subclass is substantially the same in scope as ECLA classification H01L21/3205M2. | |
E21.297 | ....... Deposition of semiconductive layer, e.g., poly - or amorphous silicon layer (EPO): |
This subclass is indented under subclass E21.294. This subclass is substantially the same in scope as ECLA classification H01L21/3205N. | |
E21.298 | ....... Deposition of superconductive layer (EPO): |
This subclass is indented under subclass E21.294. This subclass is substantially the same in scope as ECLA classification H01L21/3205Q. | |
E21.299 | ....... Deposition of conductive or semi-conductive organic layer (EPO): |
This subclass is indented under subclass E21.294. This subclass is substantially the same in scope as ECLA classification H01L21/3205P. | |
E21.3 | ....... Post treatment (EPO): |
This subclass is indented under subclass E21.294. This subclass is substantially the same in scope as ECLA classification H01L21/321. | |
E21.301 | ........ Oxidation of silicon-containing layer (EPO): |
This subclass is indented under subclass E21.3. This subclass is substantially the same in scope as ECLA classification H01L21/321C. | |
E21.302 | ........ Nitriding of silicon-containing layer (EPO): |
This subclass is indented under subclass E21.3. This subclass is substantially the same in scope as ECLA classification H01L21/321D. | |
E21.303 | ........ Planarization (EPO): |
This subclass is indented under subclass E21.3. This subclass is substantially the same in scope as ECLA classification H01L21/321P. | |
E21.304 | ......... By chemical mechanical polishing (CMP) (EPO): |
This subclass is indented under subclass E21.303. This subclass is substantially the same in scope as ECLA classification H01L21/321P2. | |
E21.305 | ........ Physical or chemical etching of layer, e.g., to produce a patterned layer from pre-deposited extensive layer (EPO): |
This subclass is indented under subclass E21.3 This subclass is substantially the same in scope as ECLA classification H01L21/3213. | |
E21.306 | ......... By physical means only (EPO): |
This subclass is indented under subclass E21.305. This subclass is substantially the same in scope as ECLA classification H01L21/3213B. | |
E21.307 | .......... Of silicon-containing layer (EPO): |
This subclass is indented under subclass E21.306. This subclass is substantially the same in scope as ECLA classification H01L21/3213B2. | |
E21.308 | ......... By chemical means only (EPO): |
This subclass is indented under subclass E21.305. This subclass is substantially the same in scope as ECLA classification H01L21/3213C. | |
E21.309 | .......... By liquid etching only (EPO): |
This subclass is indented under subclass E21.308. This subclass is substantially the same in scope as ECLA classification H01L21/3213C2. | |
E21.31 | .......... By vapor etching only (EPO): |
This subclass is indented under subclass E21.308. This subclass is substantially the same in scope as ECLA classification H01L21/3213C4. | |
E21.311 | ........... Using plasma (EPO): |
This subclass is indented under subclass E21.31. This subclass is substantially the same in scope as ECLA classification H01L21/3213C4B. | |
E21.312 | ............ Of silicon-containing layer (EPO): |
This subclass is indented under subclass E21.311. This subclass is substantially the same in scope as ECLA classification H01L21/3213C4B2. | |
E21.313 | ........... Pre- or post-treatment, e.g., anti-corrosion process (EPO): |
This subclass is indented under subclass E21.31. This subclass is substantially the same in scope as ECLA classification H01L21/3213C4D. | |
E21.314 | ......... Using mask (EPO): |
This subclass is indented under subclass E21.305. This subclass is substantially the same in scope as ECLA classification H01L21/3213D. | |
E21.315 | ........ Doping layer (EPO): |
This subclass is indented under subclass E21.3. This subclass is substantially the same in scope as ECLA classification H01L21/3215. | |
E21.316 | ......... Doping polycrystalline or amorphous silicon layer (EPO): |
This subclass is indented under subclass E21.315. This subclass is substantially the same in scope as ECLA classification H01L21/3215B. | |
E21.317 | ..... To modify their internal properties, e.g., to produce internal imperfections (EPO): |
This subclass is indented under subclass E21.211. This subclass is substantially the same in scope as ECLA classification H01L21/322. | |
E21.318 | ...... Of silicon body, e.g., for gettering (EPO): |
This subclass is indented under subclass E21.317. This subclass is substantially the same in scope as ECLA classification H01L21/322B. | |
E21.319 | ....... Using cavities formed by inert gas ion implantation, e.g., hydrogen, noble gas (EPO): |
This subclass is indented under subclass E21.318. This subclass is substantially the same in scope as ECLA classification H01L21/322B2. | |
E21.32 | ....... Of silicon on insulator (SOI) (EPO): |
This subclass is indented under subclass E21.318. This subclass is substantially the same in scope as ECLA classification H01L21/322B10. | |
E21.321 | ....... Thermally inducing defects using oxygen present in silicon body for intrinsic gettering (EPO): |
This subclass is indented under subclass E21.318.
This subclass is substantially the same in scope as ECLA classification
H01L21/322B8.
| |||
E21.322 | ...... Of Group III-V compound, e.g., to make them semi-insulating (EPO): |
This subclass is indented under subclass E21.317. This subclass is substantially the same in scope as ECLA classification H01L21/322C. | |
E21.323 | ..... Of diamond body (EPO): |
This subclass is indented under subclass E21.317. This subclass is substantially the same in scope as ECLA classification H01L21/322D. | |
E21.324 | ...... Thermal treatment for modifying properties of semiconductor body, e.g., annealing, sintering (EPO): |
This subclass is indented under subclass E21.211. This subclass is substantially the same in scope as ECLA classification H01L21/324. | |
E21.325 | ...... For the formation of PN junction without addition of impurities (EPO): |
This subclass is indented under subclass E21.324. This subclass is substantially the same in scope as ECLA classification H01L21/324B. | |
E21.326 | ...... Of Group III-V compound (EPO): |
This subclass is indented under subclass E21.324. This subclass is substantially the same in scope as ECLA classification H01L21/324P. | |
E21.327 | ..... Application of electric current or field, e.g., for electroforming (EPO): |
This subclass is indented under subclass E21.211. This subclass is substantially the same in scope as ECLA classification H01L21/326. | |
E21.328 | .... Radiation treatment (EPO): |
This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/26. | |
E21.329 | ..... Using natural radiation, e.g., alpha , beta or gamma radiation (EPO): |
This subclass is indented under subclass E21.328. This subclass is substantially the same in scope as ECLA classification H01L21/26C. | |
E21.33 | ..... To produce chemical element by transmutation (EPO): |
This subclass is indented under subclass E21.328. This subclass is substantially the same in scope as ECLA classification H01L21/261. | |
E21.331 | ..... With high-energy radiation (EPO): |
This subclass is indented under subclass E21.328. This subclass is substantially the same in scope as ECLA classification H01L21/263. | |
E21.332 | ...... For etching, e.g., sputter etching (EPO): |
This subclass is indented under subclass E21331. This subclass is substantially the same in scope as ECLA classification H01L21/263B. | |
E21.333 | ...... For heating, e.g., electron beam heating (EPO): |
This subclass is indented under subclass E21.331. This subclass is substantially the same in scope as ECLA classification H01L21/263C. | |
E21.334 | ...... Producing ions for implantation (EPO): |
This subclass is indented under subclass E21.331. This subclass is substantially the same in scope as ECLA classification H01L21/265. | |
E21.335 | ....... In Group IV semiconductor (EPO): |
This subclass is indented under subclass E21.334. This subclass is substantially the same in scope as ECLA classification H01L21/265A. | |
E21.336 | ........ Of electrically active species (EPO): |
This subclass is indented under subclass E21.335. This subclass is substantially the same in scope as ECLA classification H01L21/265A2. | |
E21.337 | ......... Through-implantation (EPO): |
This subclass is indented under subclass E21.336. This subclass is substantially the same in scope as ECLA classification H01L21/265A2B. | |
E21.338 | ........ Recoil-implantation (EPO): |
This subclass is indented under subclass E21.335. This subclass is substantially the same in scope as ECLA classification H01L21/265A3. | |
E21.339 | ........ Of electrically inactive species in silicon to make buried insulating layer (EPO): |
This subclass is indented under subclass E21.335. This subclass is substantially the same in scope as ECLA classification H01L21/265A4. | |
E21.34 | ....... In Group III-V compound (EPO): |
This subclass is indented under subclass E21.334. This subclass is substantially the same in scope as ECLA classification H01L21/265B. | |
E21.341 | ........ Of electrically active species (EPO): |
This subclass is indented under subclass E21.34. This subclass is substantially the same in scope as ECLA classification H01L21/265B2. | |
E21.342 | ......... Through-implantation (EPO): |
This subclass is indented under subclass E21.341. This subclass is substantially the same in scope as ECLA classification H01L21/265B2B. | |
E21.343 | ........ Characterized by the implantation of both electrically active and inactive species in the same semiconductor region to be doped (EPO): |
This subclass is indented under subclass E21.34. This subclass is substantially the same in scope as ECLA classification H01L21/265B3. | |
E21.344 | ....... In diamond (EPO): |
This subclass is indented under subclass E21.334. This subclass is substantially the same in scope as ECLA classification H01L21/265D. | |
E21.345 | ....... Characterized by the angle between the ion beam and the crystal planes or the main crystal surface (EPO): |
This subclass is indented under subclass E21.334. This subclass is substantially the same in scope as ECLA classification H01L21/265F. | |
E21.346 | ....... Using mask (EPO): |
This subclass is indented under subclass E21.334. This subclass is substantially the same in scope as ECLA classification H01L21/266. | |
E21.347 | ...... Using electromagnetic radiation, e.g., laser radiation (EPO): |
This subclass is indented under subclass E21.331. This subclass is substantially the same in scope as ECLA classification H01L21/268. | |
E21.348 | ....... Using X-ray laser (EPO): |
This subclass is indented under subclass E21.347. This subclass is substantially the same in scope as ECLA classification H01L21/268B. | |
E21.349 | ....... Using incoherent radiation (EPO): |
This subclass is indented under subclass E21.347. This subclass is substantially the same in scope as ECLA classification H01L21/268C. | |
E21.35 | .... Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (EPO): |
This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/328. | |
E21.351 | ..... Device comprising one or two electrodes, e.g., diode, resistor or capacitor with PN or Schottky junctions (EPO): |
This subclass is indented under subclass E21.35. This subclass is substantially the same in scope as ECLA classification H01L21/329. | |
E21.352 | ...... Diode (EPO): |
This subclass is indented under subclass E21.351. This subclass is substantially the same in scope as ECLA classification H01L21/329B. | |
E21.353 | ....... Tunnel diode (EPO): |
This subclass is indented under subclass E21.352. This subclass is substantially the same in scope as ECLA classification H01L21/329B2. | |
E21.354 | ....... Transit time diode, e.g., IMPATT, TRAPATT diode (EPO): |
This subclass is indented under subclass E21.352. This subclass is substantially the same in scope as ECLA classification H01L21/329B3. | |
E21.355 | ....... Break-down diode, e.g., Zener diode, avalanche diode (EPO): |
This subclass is indented under subclass E21.352. This subclass is substantially the same in scope as ECLA classification H01L21/329B4. | |
E21.356 | ........ Zener diode (EPO): |
This subclass is indented under subclass E21.355. This subclass is substantially the same in scope as ECLA classification H01L21/329B4B. | |
E21.357 | ........ Avalanche diode (EPO): |
This subclass is indented under subclass E21.355. This subclass is substantially the same in scope as ECLA classification H01L21/329B4C. | |
E21.358 | ....... Rectifier diode (EPO): |
This subclass is indented under subclass E21.352. This subclass is substantially the same in scope as ECLA classification H01L21/329B5. | |
E21.359 | ....... Schottky diode (EPO): |
This subclass is indented under subclass E21.352. This subclass is substantially the same in scope as ECLA classification H01L21/329B6. | |
E21.36 | ....... Planar diode (EPO): |
This subclass is indented under subclass E21.352. This subclass is substantially the same in scope as ECLA classification H01L21/329B7. | |
E21.361 | ....... Multi-layer diode, e.g., PNPN or NPNP diode (EPO): |
This subclass is indented under subclass E21.352. This subclass is substantially the same in scope as ECLA classification H01L21/329B8. | |
E21.362 | ....... Gated-diode structure, e.g., SITh, FCTh, FCD (EPO): |
This subclass is indented under subclass E21.352. This subclass is substantially the same in scope as ECLA classification H01L21/329B9. | |
E21.363 | ...... Resistor with PN junction (EPO): |
This subclass is indented under subclass E21.351. This subclass is substantially the same in scope as ECLA classification H01L21/329C. | |
E21.364 | ...... Capacitor with PN - or Schottky junction, e.g., varactor (EPO): |
This subclass is indented under subclass E21.351. This
subclass is substantially the same in scope as ECLA classification
H01L21/329D.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.365 | ...... Active layer is Group III-V compound (EPO): |
This subclass is indented under subclass E21.351. This subclass is substantially the same in scope as ECLA classification H01L21/329P. | |
E21.366 | ....... Diode (EPO): |
This subclass is indented under subclass E21.365. This subclass is substantially the same in scope as ECLA classification H01L21/329P4. | |
E21.367 | ........ With an heterojunction, e.g., resonant tunneling diodes (RTD) (EPO): |
This subclass is indented under subclass E21.366. This subclass is substantially the same in scope as ECLA classification H01L21/329P4D. | |
E21.368 | ........ Schottky diode (EPO): |
This subclass is indented under subclass E21.366. This subclass is substantially the same in scope as ECLA classification H01L21/329P4C. | |
E21.369 | ..... Device comprising three or more electrodes (EPO): |
This subclass is indented under subclass E21.35. This subclass is substantially the same in scope as ECLA classification H01L21/33. | |
E21.37 | ...... Transistor (EPO): |
This subclass is indented under subclass E21.369. This subclass is substantially the same in scope as ECLA classification H01L21/331. | |
E21.371 | ....... Heterojunction transistor (EPO): |
This subclass is indented under subclass E21.37.
This subclass is substantially the same in scope as ECLA classification
H01L21/331B.
| |||
E21.372 | ....... Bipolar thin film transistor (EPO): |
This subclass is indented under subclass E21.37. This subclass is substantially the same in scope as ECLA classification H01L21/331E. | |
E21.373 | ....... Lateral transistor (EPO): |
This subclass is indented under subclass E21.37. This subclass is substantially the same in scope as ECLA classification H01L21/331C. | |
E21.374 | ....... Schottky transistor (EPO): |
This subclass is indented under subclass E21.037. This subclass is substantially the same in scope as ECLA classification H01L21/331D. | |
E21.375 | ....... Silicon vertical transistor (EPO): |
This subclass is indented under subclass E21.037. This subclass is substantially the same in scope as ECLA classification H01L21/331F. | |
E21.376 | ........ Planar transistor (EPO): |
This subclass is indented under subclass E21.375. This subclass is substantially the same in scope as ECLA classification H01L21/331F2. | |
E21.377 | ........ Mesa-planar transistor (EPO): |
This subclass is indented under subclass E21.375. This subclass is substantially the same in scope as ECLA classification H01L21/331F3. | |
E21.378 | ........ Inverse transistor (EPO): |
This subclass is indented under subclass E21.375. This subclass is substantially the same in scope as ECLA classification H01L21/331F4. | |
E21.379 | ........ With single crystalline emitter, collector or base including extrinsic, link or graft base formed on silicon substrate, e.g., by epitaxy, recrystallization, after insulating device isolation (EPO): |
This subclass is indented under subclass E21.375. This subclass is substantially the same in scope as ECLA classification H01L21/331F8. | |
E21.38 | ........ Where main current goes through whole of silicon substrate, e.g., power bipolar transistor (EPO): |
This subclass is indented under subclass E21.375. This subclass is substantially the same in scope as ECLA classification H01L21/331F10. | |
E21.381 | ......... With a multi- emitter, e.g., interdigitated, multicellular, distributed (EPO): |
This subclass is indented under subclass E21.38. This subclass is substantially the same in scope as ECLA classification H01L21/331F10E. | |
E21.382 | ....... Field-effect controlled bipolar-type transistor, e.g., insulated gate bipolar transistor (IGBT) (EPO): |
This subclass is indented under subclass E21.37. This subclass is substantially the same in scope as ECLA classification H01L21/331G. | |
E21.383 | ........ Vertical insulated gate bipolar transistor (EPO): |
This subclass is indented under subclass E21.382. This subclass is substantially the same in scope as ECLA classification H01L21/331G2. | |
E21.384 | ......... With recessed gate (EPO): |
This subclass is indented under subclass E21.383. This subclass is substantially the same in scope as ECLA classification H01L21/331G2R. | |
E21.385 | ......... With recess formed by etching in source/emitter contact region (EPO): |
This subclass is indented under subclass E21.383. This subclass is substantially the same in scope as ECLA classification H01L21/331G2B. | |
E21.386 | ....... Active layer, e.g., base, is Group III-V compound (EPO): |
This subclass is indented under subclass E21.37. This subclass is substantially the same in scope as ECLA classification H01L21/331P. | |
E21.387 | ........ Heterojunction transistor (EPO): |
This subclass is indented under subclass E21.386. This subclass is substantially the same in scope as ECLA classification H01L21/331P2. | |
E21.388 | ...... Thyristor (EPO): |
This subclass is indented under subclass E21.369.
This subclass is substantially the same in scope as ECLA classification
H01L21/332.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.389 | ....... Lateral or planar thyristor (EPO): |
This subclass is indented under subclass E21.388. This subclass is substantially the same in scope as ECLA classification H01L21/332B. | |
E21.39 | ....... Structurally associated with other devices (EPO): |
This subclass is indented under subclass E21.388.
This subclass is substantially the same in scope as ECLA classification
H01L21/332M.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.391 | ........ Other device being a controlling device of the field-effect-type (EPO): |
This subclass is indented under subclass E21.39. This subclass is substantially the same in scope as ECLA classification H01L21/332M2. | |
E21.392 | ....... Bi-directional thyristor (EPO): |
This subclass is indented under subclass E21.388. This subclass is substantially the same in scope as ECLA classification H01L21/332P. | |
E21.393 | ....... Active layer is Group III-V compound (EPO): |
This subclass is indented under subclass E21.388. This subclass is substantially the same in scope as ECLA classification H01L21/332Q. | |
E21.394 | .... Multi-step process for the manufacture of unipolar device (EPO): |
This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/334. | |
E21.395 | ..... Transistor-like structure, e.g., hot electron transistor (HET); metal base transistor (MBT); resonant tunneling HET (RHET); resonant tunneling transistor (RTT ); bulk barrier transistor (BBT); planar doped barrier transistor (PDBT); charge injection transistor (CHINT); ballistic transistor (EPO): |
This subclass is indented under subclass E21.394. This subclass is substantially the same in scope as ECLA classification H01L21/334B. | |
E21.396 | ..... Metal-insulator-semiconductor capacitor, e.g., trench capacitor (EPO): |
This subclass is indented under subclass E21.394. This subclass is substantially the same in scope as ECLA classification H01L21/334C. | |
E21.397 | ...... Comprising PN junction, e.g., hybrid capacitor (EPO): |
This subclass is indented under subclass E21.396. This subclass is substantially the same in scope as ECLA classification H01L21/334C2. | |
E21.398 | ..... Active layer is Group III-V compound (EPO): |
This subclass is indented under subclass E21.394. This subclass is substantially the same in scope as ECLA classification H01L21/334P. | |
E21.399 | ...... Transistor-like structure, e.g., hot electron transistor (HET), metal base transistor (MBT), resonant tunneling hot electron transistor (RHET), resonant tunneling transistor (RTT), bulk barrier transistor (BBT), planar doped barrier transistor (PDBT), charge injection transistor (CHINT) (EPO): |
This subclass is indented under subclass E21.398. This subclass is substantially the same in scope as ECLA classification H01L21/334P2. | |
E21.4 | ..... Field-effect transistor (EPO): |
This subclass is indented under subclass E21.394. This subclass is substantially the same in scope as ECLA classification H01L21/335. | |
E21.401 | ...... Using static field induced region, e.g., SIT, PBT (EPO): |
This subclass is indented under subclass E21.4. This subclass is substantially the same in scope as ECLA classification H01L21/335B. | |
E21.402 | ....... Permeable base transistor (PBT) (EPO): |
This subclass is indented under subclass E21.401. This subclass is substantially the same in scope as ECLA classification H01L21/335B2. | |
E21.403 | ...... With heterojunction interface channel or gate, e.g., HFET, HIGFET, SISFET, HJFET, HEMT (EPO): |
This subclass is indented under subclass E21.4. This subclass is substantially the same in scope as ECLA classification H01L21/335C. | |
E21.404 | ...... With one or zero or quasi-one or quasi-zero dimensional charge carrier gas channel, e.g., quantum wire FET; single electron transistor (SET); striped channel transistor; coulomb blockade device (EPO): |
This subclass is indented under subclass E21.4. This subclass is substantially the same in scope as ECLA classification H01L21/335D. | |
E21.405 | ...... Active layer is Group III-V compound, e.g., III-V velocity modulation transistor (VMT), NERFET (EPO): |
This subclass is indented under subclass E21.4. This subclass is substantially the same in scope as ECLA classification H01L21/335P. | |
E21.406 | ....... Using static field induced region, e.g., SIT, PBT (EPO): |
This subclass is indented under subclass E21.405. This subclass is substantially the same in scope as ECLA classification H01L21/335P2. | |
E21.407 | ....... With an heterojunction interface channel or gate, e.g., HFET, HIGFET, SI SFET, HJFET, HEMT (EPO): |
This subclass is indented under subclass E21.405. This subclass is substantially the same in scope as ECLA classification H01L21/335P3. | |
E21.408 | ....... With one or zero or quasi-one or quasi-zero dimensional channel, e.g., in plane gate transistor (IPG), single electron transistor (SET), striped channel transistor, coulomb blockade device (EPO): |
This subclass is indented under subclass E21.405. This subclass is substantially the same in scope as ECLA classification H01L21/335P4. | |
E21.409 | ...... With an insulated gate (EPO): |
This subclass is indented under subclass E21.4. This subclass is substantially the same in scope as ECLA classification H01L21/336. | |
E21.41 | ....... Vertical transistor (EPO): |
This subclass is indented under subclass E21.409.
This subclass is substantially the same in scope as ECLA classification
H01L21/336A.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.411 | ....... Thin film unipolar transistor (EPO): |
This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336D. | |
E21.412 | ........ Amorphous silicon or polysilicon transistor (EPO): |
This subclass is indented under subclass E21.411.
This subclass is substantially the same in scope as ECLA classification
H01L21/336D2.
| |||
E21.413 | ......... Lateral single gate single channel transistor with noninverted structure, i.e., channel layer is formed before gate (EPO): |
This subclass is indented under subclass E21.412. This subclass is substantially the same in scope as ECLA classification H01L21/336D2B. | |
E21.414 | ......... Lateral single gate single channel transistor with inverted structure, i.e., channel layer is formed after gate (EPO): |
This subclass is indented under subclass E21.412. This subclass is substantially the same in scope as ECLA classification H01L21/336D2C. | |
E21.415 | ........ Monocrystalline silicon transistor on insulating substrate, e.g., quartz substrate (EPO): |
This subclass is indented under subclass E21.411. This subclass is substantially the same in scope as ECLA classification H01L21/336D3. | |
E21.416 | ......... On sapphire substrate, e.g., silicon on sapphire (SOS) transistor (EPO): |
This subclass is indented under subclass E21.415. This subclass is substantially the same in scope as ECLA classification H01L21/336D3B. | |
E21.417 | ....... With channel containing layer, e.g., p-base, formed in or on drain region, e.g., DMOS transistor (EPO): |
This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336B. | |
E21.418 | ........ Vertical power DMOS transistor (EPO): |
This subclass is indented under subclass E21.417. This subclass is substantially the same in scope as ECLA classification H01L21/336B2. | |
E21.419 | ......... With recessed gate (EPO): |
This subclass is indented under subclass E21.418. This subclass is substantially the same in scope as ECLA classification H01L21/336B2R. | |
E21.42 | ......... With recess formed by etching in source/base contact region (EPO): |
This subclass is indented under subclass E21.418. This subclass is substantially the same in scope as ECLA classification H01L21/336B2B. | |
E21.421 | ....... With multiple gate, one gate having MOS structure and others having same or a different structure, i.e., non MOS, e.g., JFET gate (EPO): |
This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336E. | |
E21.422 | ....... With floating gate (EPO): |
This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336F. | |
E21.423 | ....... With charge trapping gate insulator, e.g., MNOS transistor (EPO): |
This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336G. | |
E21.424 | ....... Lateral single gate silicon transistor (EPO): |
This subclass is indented under subclass E21.409.
This subclass is substantially the same in scope as ECLA classification
H01L21/336H.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.425 | ........ With source or drain region formed by Schottky barrier or conductor-insulator-semiconductor structure (EPO): |
This subclass is indented under subclass E21.424. This subclass is substantially the same in scope as ECLA classification H01L21/336H18. | |
E21.426 | ........ With single crystalline channel formed on the silicon substrate after insulating device isolation (EPO): |
This subclass is indented under subclass E21.424. This subclass is substantially the same in scope as ECLA classification H01L21/336H20. | |
E21.427 | ........ With asymmetry in channel direction, e.g., high-voltage lateral transistor with channel containing layer, e.g., p-base (EPO): |
This subclass is indented under subclass E21.424.
This subclass is substantially the same in scope as ECLA classification
H01L21/336H4.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.428 | ........ With a recessed gate, e.g., lateral U-MOS (EPO): |
This subclass is indented under subclass E21.424. This subclass is substantially the same in scope as ECLA classification H01L21/336H6. | |
E21.429 | ......... Using etching to form recess at gate location (EPO): |
This subclass is indented under subclass E21.428. This subclass is substantially the same in scope as ECLA classification H01L21/336H6B. | |
E21.43 | ......... Recessing gate by adding semiconductor material at source (S) or drain (D) location, e.g., transist or with elevated single crystal S and D (EPO): |
This subclass is indented under subclass E21.428. This subclass is substantially the same in scope as ECLA classification H01L21/336H6C. | |
E21.431 | ........ With source and drain recessed by etching or recessed and refilled (EPO): |
This subclass is indented under subclass E21.424. This subclass is substantially the same in scope as ECLA classification H01L21/336H8. | |
E21.432 | ........ With source and drain contacts formation strictly before final gate formation, e.g., contact first technology (EPO): |
This subclass is indented under subclass E21.424. This subclass is substantially the same in scope as ECLA classification H01L21/336H2. | |
E21.433 | ........ Where the source and drain or source and drain extensions are self-aligned to sides of gate (EPO): |
This subclass is indented under subclass E21.424. This subclass is substantially the same in scope as ECLA classification H01L21/336H1. | |
E21.434 | ......... With initial gate mask or masking layer complementary to prospective gate location, e.g., with dummy source and drain contacts (EPO): |
This subclass is indented under subclass E21.433. This subclass is substantially the same in scope as ECLA classification H01L21/336H1C. | |
E21.435 | ....... Lateral single gate single channel silicon transistor with both lightly doped source and drain extensions and source and drain self-aligned to sides of gate, e.g., LDD MOSFET, DDD MOSFET (EPO): |
This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336C. | |
E21.436 | ....... Gate comprising layer with ferroelectric properties (EPO): |
This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336K. | |
E21.437 | ....... With lightly doped drain selectively formed at side of gate (EPO): |
This subclass is indented under subclass E21.409.
This subclass is substantially the same in scope as ECLA classification
H01L21/336L.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.438 | ....... Using self-aligned silicidation, i.e., salicide (EPO): |
This subclass is indented under subclass E21.409.
This subclass is substantially the same in scope as ECLA classification
H01L21/336M.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||||
E21.439 | ........ Providing different silicide thicknesses on gate and on source or drain (EPO): |
This subclass is indented under subclass E21.438. This subclass is substantially the same in scope as ECLA classification H01L21/336M2. | |
E21.44 | ....... Using self-aligned selective metal deposition simultaneously on gate and on source or drain (EPO): |
This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336N. | |
E21.441 | ....... Active layer is Group III-V compound (EPO): |
This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336P. | |
E21.442 | ....... With gate at side of channel (EPO): |
This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336S. | |
E21.443 | ....... Using self-aligned punchthrough stopper or threshold implant under gate region (EPO): |
This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336T. | |
E21.444 | ....... Using dummy gate wherein at least part of final gate is self-aligned to dummy gate (EPO): |
This subclass is indented under subclass E21.409.
This subclass is substantially the same in scope as ECLA classification
H01L21/336U.
| |||
E21.445 | ...... With PN junction or heterojunction gate (EPO): |
This subclass is indented under subclass E21.4. This subclass is substantially the same in scope as ECLA classification H01L21/337. | |
E21.446 | ....... With PN homojunction gate (EPO): |
This subclass is indented under subclass E21.445. This subclass is substantially the same in scope as ECLA classification H01L21/337B. | |
E21.447 | ........ Vertical transistor, e.g., tecnetrons (EPO): |
This subclass is indented under subclass E21.446. This subclass is substantially the same in scope as ECLA classification H01L21/337B2. | |
E21.448 | ....... With heterojunction gate (EPO): |
This subclass is indented under subclass E21.445. This subclass is substantially the same in scope as ECLA classification H01L21/337C. | |
E21.449 | ....... Active layer is Group III-V compound (EPO): |
This subclass is indented under subclass E21.445. This subclass is substantially the same in scope as ECLA classification H01L21/337P. | |
E21.45 | ...... With Schottky gate, e.g., MESFET (EPO): |
This subclass is indented under subclass E21.4. This subclass is substantially the same in scope as ECLA classification H01L21/338. | |
E21.451 | ....... Active layer being Group III-V compound (EPO): |
This subclass is indented under subclass E21.45. This subclass is substantially the same in scope as ECLA classification H01L21/338P. | |
E21.452 | ........ Lateral single-gate transistors (EPO): |
This subclass is indented under subclass E21.451. This subclass is substantially the same in scope as ECLA classification H01L21/338P2. | |
E21.453 | ......... Process wherein final gate is made after formation of source and drain regions in active layer, e.g., dummy-gate process (EPO): |
This subclass is indented under subclass E21.452. This subclass is substantially the same in scope as ECLA classification H01L21/338P2B. | |
E21.454 | ......... Process wherein final gate is made before formation, e.g., activation anneal, of source and drain regions in active layer (EPO): |
This subclass is indented under subclass E21.452.
This subclass is substantially the same in scope as ECLA classification
H01L21/338P2C.
| |||
E21.455 | ......... Lateral transistor with two or more independent gates (EPO): |
This subclass is indented under subclass E21.452. This subclass is substantially the same in scope as ECLA classification H01L21/338P2M. | |
E21.456 | ..... Charge transfer device (EPO): |
This subclass is indented under subclass E21.394. This subclass is substantially the same in scope as ECLA classification H01L21/339. | |
E21.457 | ...... With insulated gate (EPO): |
This subclass is indented under subclass E21.456. This subclass is substantially the same in scope as ECLA classification H01L21/339B. | |
E21.458 | ...... With Schottky gate (EPO): |
This subclass is indented under subclass E21.456. This subclass is substantially the same in scope as ECLA classification H01L21/339C. | |
E21.459 | ... Device having semiconductor body other than carbon, Si, Ge, SiC, Se, Te, Cu 2O, CuI, and Group III-V compounds with or without impurities, e.g., doping materials (EPO): |
This subclass is indented under subclass E21.04 This subclass is substantially the same in scope as ECLA classification H01L21/34. | |
E21.46 | .... Multistep process (EPO): |
This subclass is indented under subclass E21.459. This subclass is substantially the same in scope as ECLA classification H01L21/34B. | |
E21.461 | .... Deposition of semiconductor material on substrate, e.g., epitaxial growth (EPO): |
This subclass is indented under subclass E21.459. This subclass is substantially the same in scope as ECLA classification H01L21/36. | |
E21.462 | ..... Using physical deposition, e.g., vacuum deposition, sputtering (EPO): |
This subclass is indented under subclass E21.461. This subclass is substantially the same in scope as ECLA classification H01L21/363. | |
E21.463 | ..... Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (EPO): |
This subclass is indented under subclass E21.461. This subclass is substantially the same in scope as ECLA classification H01L21/365. | |
E21.464 | ..... Using liquid deposition (EPO): |
This subclass is indented under subclass E21.461. This subclass is substantially the same in scope as ECLA classification H01L21/368. | |
E21.465 | ...... From molten solution of compound or alloy, e.g., liquid phase epitaxy (EPO): |
This subclass is indented under subclass E21.464. This subclass is substantially the same in scope as ECLA classification H01L21/368B. | |
E21.466 | .... Diffusion of impurity material, e.g., dopant, electrode material, into or out of semiconductor body, or between semiconductor regions (EPO): |
This subclass is indented under subclass E21.459. This subclass is substantially the same in scope as ECLA classification H01L21/38. | |
E21.467 | ..... Using diffusion into or out of solid from or into gaseous phase (EPO): |
This subclass is indented under subclass E21.466. This subclass is substantially the same in scope as ECLA classification H01L21/383. | |
E21.468 | ..... Using diffusion into or out of solid from or into solid phase, e.g., doped oxide layer (EPO): |
This subclass is indented under subclass E21.466. This subclass is substantially the same in scope as ECLA classification H01L21/385. | |
E21.469 | ..... Using diffusion into or out of solid from or into liquid phase, e.g., alloy diffusion process (EPO): |
This subclass is indented under subclass E21.466. This subclass is substantially the same in scope as ECLA classification H01L21/388. | |
E21.47 | .... Alloying of impurity material, e.g., dopant, electrode material, with semiconductor body (EPO): |
This subclass is indented under subclass E21.459. This subclass is substantially the same in scope as ECLA classification H01L21/40. | |
E21.471 | .... Radiation treatment (EPO): |
This subclass is indented under subclass E21.459. This subclass is substantially the same in scope as ECLA classification H01L21/42. | |
E21.472 | ..... With high-energy radiation (EPO): |
This subclass is indented under subclass E21.471. This subclass is substantially the same in scope as ECLA classification H01L21/423. | |
E21.473 | ...... Producing ion implantation (EPO): |
This subclass is indented under subclass E21.472. This subclass is substantially the same in scope as ECLA classification H01L21/425. | |
E21.474 | ....... Using mask (EPO): |
This subclass is indented under subclass E21.473. This subclass is substantially the same in scope as ECLA classification H01L21/426. | |
E21.475 | ...... Using electromagnetic radiation, e.g., laser radiation (EPO): |
This subclass is indented under subclass E21.472. This subclass is substantially the same in scope as ECLA classification H01L21/428. | |
E21.476 | .... Manufacture of electrodes on semiconductor bodies using processes or apparatus other than epitaxial growth, e.g., coating, diffusion, or alloying, or radiation treatment (EPO): |
This subclass is indented under subclass E21.459. This
subclass is substantially the same in scope as ECLA classification
H01L21/44.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.477 | ..... Deposition of conductive or insulating materials for electrode (EPO): |
This subclass is indented under subclass E21.476. This subclass is substantially the same in scope as ECLA classification H01L21/441. | |
E21.478 | ...... From gas or vapor, e.g., condensation (EPO): |
This subclass is indented under subclass E21.477. This subclass is substantially the same in scope as ECLA classification H01L21/443. | |
E21.479 | ...... From liquid, e.g., electrolytic deposition (EPO): |
This subclass is indented under subclass E21.477. This subclass is substantially the same in scope as ECLA classification H01L21/445. | |
E21.48 | ..... Involving application of pressure, e.g., thermo compression bonding (EPO): |
This subclass is indented under subclass E21.476. This subclass is substantially the same in scope as ECLA classification H01L21/447. | |
E21.481 | ..... Including application of mechanical vibration, e.g., ultrasonic vibration (EPO): |
This subclass is indented under subclass E21.476. This subclass is substantially the same in scope as ECLA classification H01L21/449. | |
E21.482 | .... Treatment of semiconductor body using process other than electromagnetic radiation (EPO): |
This subclass is indented under subclass E21.459. This
subclass is substantially the same in scope as ECLA classification
H01L21/46.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
E21.483 | ..... To change their surface-physical characteristics or shape, e.g., etching, polishing, cutting (EPO): |
This subclass is indented under subclass E21.482. This subclass is substantially the same in scope as ECLA classification H01L21/461. | |
E21.484 | ...... Mechanical treatment, e.g., grinding, ultrasonic treatment (EPO): |
This subclass is indented under subclass E21.483. This subclass is substantially the same in scope as ECLA classification H01L21/463. | |
E21.485 | ...... Chemical or electrical treatment, e.g., electrolytic etching (EPO): |
This subclass is indented under subclass E21.483. This
subclass is substantially the same in scope as ECLA classification
H01L21/465.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.486 | ....... Using mask (EPO): |
This subclass is indented under subclass E21.485. This subclass is substantially the same in scope as ECLA classification H01L21/467. | |
E21.487 | ...... To form insulating layer thereon, e.g., for masking or by using photolithographic techniques; posttreatment of these layers (EPO): |
This subclass is indented under subclass E21.483. This
subclass is substantially the same in scope as ECLA classification
H01L21/469.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||
E21.488 | ....... Using mask (EPO): |
This subclass is indented under subclass E21.487. This subclass is substantially the same in scope as ECLA classification H01L21/475. | |
E21.489 | ....... Posttreatment of insulating layer (EPO): |
This subclass is indented under subclass E21.487. This subclass is substantially the same in scope as ECLA classification H01L21/4757. | |
E21.49 | ........ Etching layer (EPO): |
This subclass is indented under subclass E21.489. This subclass is substantially the same in scope as ECLA classification H01L21/4757B. | |
E21.491 | ........ Doping layer (EPO): |
This subclass is indented under subclass E21.489. This subclass is substantially the same in scope as ECLA classification H01L21/4757C. | |
E21.492 | ....... Organic layer, e.g., photoresist (EPO): |
This subclass is indented under subclass E21.487. This subclass is substantially the same in scope as ECLA classification H01L21/47. | |
E21.493 | ....... Inorganic layer (EPO): |
This subclass is indented under subclass E21.487. This subclass is substantially the same in scope as ECLA classification H01L21/471. | |
E21.494 | ........ Composed of oxide or glassy oxide or oxide- based glass (EPO): |
This subclass is indented under subclass E21.493. This subclass is substantially the same in scope as ECLA classification H01L21/473. | |
E21.495 | ...... Deposition of noninsulating, e.g., conductive-, resistive-, layer on insulating layer (EPO): |
This subclass is indented under subclass E21.483. This
subclass is substantially the same in scope as ECLA classification
H01L21/4763.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.496 | ....... Posttreatment of layer (EPO): |
This subclass is indented under subclass E21.495. This subclass is substantially the same in scope as ECLA classification H01L21/4763B. | |
E21.497 | ..... Thermal treatment for modifying property of semiconductor body, e.g., annealing, sintering (EPO): |
This subclass is indented under subclass E21.482. This subclass is substantially the same in scope as ECLA classification H01L21/477. | |
E21.498 | ..... Application of electric current or fields, e.g., for electroforming (EPO): |
This subclass is indented under subclass E21.482. This subclass is substantially the same in scope as ECLA classification H01L21/479. | |
E21.499 | ... Assembling semiconductor devices, e.g., packaging, including mounting, encapsulating, or treatment of packaged semiconductor (EPO): |
This subclass is indented under subclass E21.04. This subclass is substantially the same in scope as ECLA classification H01L21/50. | |
E21.5 | .... Mounting semiconductor bodies in container (EPO): |
This subclass is indented under subclass E21.499. This subclass is substantially the same in scope as ECLA classification H01L21/52. | |
E21.501 | .... Providing fillings in container, e.g., gas fillings (EPO): |
This subclass is indented under subclass E21.499. This subclass is substantially the same in scope as ECLA classification H01L21/54. | |
E21.502 | .... Encapsulation, e.g., encapsulation layer, coating (EPO): |
This subclass is indented under subclass E21.499. This subclass is substantially the same in scope as ECLA classification H01L21/56. | |
E21.503 | ..... Encapsulation of active face of flip-chip device, e.g., under filling or under encapsulation of flip-chip, encapsulation perform on chip or mounting substrate (EPO): |
This subclass is indented under subclass E21.502. This subclass is substantially the same in scope as ECLA classification H01L21/56F. | |
E21.504 | ..... Moulds (EPO): |
This subclass is indented under subclass E21.502. This subclass is substantially the same in scope as ECLA classification H01L21/56M. | |
E21.505 | .... Insulative mounting semiconductor device on support (EPO): |
This subclass is indented under subclass E21.499. This subclass is substantially the same in scope as ECLA classification H01L21/58. | |
E21.506 | .... Attaching or detaching leads or other conductive members, to be used for carrying current to or from device in operation (EPO): |
This subclass is indented under subclass E21.499. This subclass is substantially the same in scope as ECLA classification H01L21/60. | |
E21.507 | ..... Formation of contacts to semiconductor by use of metal layers separated by insulating layers, e.g., self-aligned contacts to source/drain or emitter/base (EPO): |
This subclass is indented under subclass E21.506. This subclass is substantially the same in scope as ECLA classification H01L21/60B. | |
E21.508 | ...... Forming solder bumps (EPO): |
This subclass is indented under subclass E21.507. This subclass is substantially the same in scope as ECLA classification H01L21/60B2. | |
E21.509 | ..... Involving soldering or alloying process, e.g., soldering wires (EPO): |
This subclass is indented under subclass E21.506. This subclass is substantially the same in scope as ECLA classification H01L21/60C. | |
E21.51 | ...... Mounting on metallic conductive member (EPO): |
This subclass is indented under subclass E21.509. This subclass is substantially the same in scope as ECLA classification H01L21/60C2. | |
E21.511 | ...... Mounting on insulating member provided with metallic leads, e.g., flip-chip mounting, conductive die mounting (EPO): |
This subclass is indented under subclass E21.509. This subclass is substantially the same in scope as ECLA classification H01L21/60C4. | |
E21.512 | ....... Right-up bonding (EPO): |
This subclass is indented under subclass E21.511. This subclass is substantially the same in scope as ECLA classification H01L21/60C4B. | |
E21.513 | ...... Mounting on semiconductor conductive member (EPO): |
This subclass is indented under subclass E21.509. This subclass is substantially the same in scope as ECLA classification H01L21/60C6. | |
E21.514 | ..... Involving use of conductive adhesive (EPO): |
This subclass is indented under subclass E21.506. This subclass is substantially the same in scope as ECLA classification H01L21/60D. | |
E21.515 | ..... Involving use of mechanical auxiliary part without use of alloying or soldering process, e.g., pressure contacts (EPO): |
This subclass is indented under subclass E21.506. This subclass is substantially the same in scope as ECLA classification H01L21/60E. | |
E21.516 | ..... Involving automation techniques using film carriers (EPO): |
This subclass is indented under subclass E21.506. This subclass is substantially the same in scope as ECLA classification H01L21/60F. | |
E21.517 | ..... Involving use of electron or laser beam (EPO): |
This subclass is indented under subclass E21.506. This subclass is substantially the same in scope as ECLA classification H01L21/60G. | |
E21.518 | ..... Involving application of mechanical vibration, e.g., ultrasonic vibration (EPO): |
This subclass is indented under subclass E21.506. This subclass is substantially the same in scope as ECLA classification H01L21/607. | |
E21.519 | ..... Involving application of pressure, e.g., thermo-compression bonding (EPO): |
This subclass is indented under subclass E21.506. This subclass is substantially the same in scope as ECLA classification H01L21/603. | |
E21.52 | .. Devices having no potential-jump barrier or surface barrier (EPO): |
This subclass is indented under subclass E21.002. This subclass is substantially the same in scope as ECLA classification H01L21/62. | |
E21.521 | . Testing or measuring during manufacture or treatment or reliability measurement, i.e., testing of parts followed by no processing which modifies parts as such (EPO): |
This subclass is indented under subclass E21.001. This
subclass is substantially the same in scope as ECLA classification
H01L21/66.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.522 | .. Structural arrangement (EPO): |
This subclass is indented under subclass E21.521. This subclass is substantially the same in scope as ECLA classification H01L21/66A. | |
E21.523 | ... Additional lead-in metallization on device, e.g., additional pads or lands, lines in scribe line, sacrificed conductors, sacrificed frames (EPO): |
This subclass is indented under subclass E21.522. This subclass is substantially the same in scope as ECLA classification H01L21/66A2. | |
E21.524 | ... Circuit for characterizing or monitoring manufacturing process, e.g., whole test die, wafer filled with test structures, onboard devices incorporated on each die, process/product control monitors or PCM, devices in scribe-line/kerf, drop-in devices (EPO): |
This subclass is indented under subclass E21.522. This subclass is substantially the same in scope as ECLA classification H01L21/66A4. | |
E21.525 | .. Procedures, i.e., sequence of activities consisting of plurality of measurement and correction, marking or sorting steps (EPO): |
This subclass is indented under subclass E21.521. This subclass is substantially the same in scope as ECLA classification H01L21/66P. | |
E21.526 | ... Connection or disconnection of subentities or redundant parts of device in response to measurement, e.g., wafer scale, memory devices (EPO): |
This subclass is indented under subclass E21.525. This subclass is substantially the same in scope as ECLA classification H01L21/66P2. | |
E21.527 | ... Optical enhancement of defects or not directly visible states, e.g., selective electrolytic deposition, bubbles in liquids, light emission, color change (EPO): |
This subclass is indented under subclass E21.525. This subclass is substantially the same in scope as ECLA classification H01L21/66P4. | |
E21.528 | ... Acting in response to ongoing measurement without interruption of processing, e.g., endpoint detection, in-situ thickness measurement (EPO): |
This subclass is indented under subclass E21.525. This subclass is substantially the same in scope as ECLA classification H01L21/66P6. | |
E21.529 | .. Measuring as part of manufacturing process (EPO): |
This subclass is indented under subclass E21.521. This subclass is substantially the same in scope as ECLA classification H01L21/66M. | |
E21.53 | ... For structural parameters, e.g., thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions (EPO): |
This subclass is indented under subclass E21.529. This subclass is substantially the same in scope as ECLA classification H01L21/66M2. | |
E21.531 | ... For electrical parameters, e.g., resistance, deep levels, CV, diffusions by electrical means (EPO): |
This subclass is indented under subclass E21.529. This subclass is substantially the same in scope as ECLA classification H01L21/66M4. | |
E21.532 | . Manufacture or treatment of devices consisting of plurality of solid-state components formed in or on common substrate or of parts thereof; manufacture of integrated circuit devices or of parts thereof (EPO): |
This subclass is indented under subclass E21.001. This subclass is substantially the same in scope as ECLA classification H01L21/70. | |
E21.533 | .. Of thick- or thin-film circuits or parts thereof (EPO): |
This subclass is indented under subclass E21.532. This subclass is substantially the same in scope as ECLA classification H01L21/70B. | |
E21.534 | ... Of thick-film circuits or parts thereof (EPO): |
This subclass is indented under subclass E21.533. This subclass is substantially the same in scope as ECLA classification H01L21/70B2. | |
E21.535 | ... Of thin-film circuits or parts thereof (EPO): |
This subclass is indented under subclass E21.533. This subclass is substantially the same in scope as ECLA classification H01L21/70B3. | |
E21.536 | .. Manufacture of specific parts of devices (EPO): |
This subclass is indented under subclass E21.532. This subclass is substantially the same in scope as ECLA classification H01L21/71. | |
E21.537 | ... Making of localized buried regions, e.g., buried collector layer, internal connection, substrate contacts (EPO): |
This subclass is indented under subclass E21.536. This subclass is substantially the same in scope as ECLA classification H01L21/74. | |
E21.538 | .... Making of internal connections, substrate contacts (EPO): |
This subclass is indented under subclass E21.537. This subclass is substantially the same in scope as ECLA classification H01L21/74B. | |
E21.539 | .... For Group III-V compound semiconductor integrated circuits (EPO): |
This subclass is indented under subclass E21.537. This subclass is substantially the same in scope as ECLA classification H01L21/74F. | |
E21.54 | ... Making of isolation regions between components (EPO): |
This subclass is indented under subclass E21.536. This subclass is substantially the same in scope as ECLA classification H01L21/76. | |
E21.541 | .... Between components manufactured in active substrate comprising SiC compound semiconductor (EPO): |
This subclass is indented under subclass E21.54. This subclass is substantially the same in scope as ECLA classification H01L21/76H. | |
E21.542 | .... Between components manufactured in active substrate comprising Group III-V compound semiconductor (EPO): |
This subclass is indented under subclass E21.54. This subclass is substantially the same in scope as ECLA classification H01L21/76P. | |
E21.543 | .... Between components manufactured in active substrate comprising Group II-VI compound semiconductor (EPO): |
This subclass is indented under subclass E21.54. This subclass is substantially the same in scope as ECLA classification H01L21/76R. | |
E21.544 | .... PN junction isolation (EPO): |
This subclass is indented under subclass E21.54. This subclass is substantially the same in scope as ECLA classification H01L21/761. | |
E21.545 | .... Dielectric regions, e.g., EPIC dielectric isolation, LOCOS; trench refilling techniques, SOI technology, use of channel stoppers (EPO): |
This subclass is indented under subclass E21.54. This subclass is substantially the same in scope as ECLA classification H01L21/762. | |
E21.546 | ..... Using trench refilling with dielectric materials (EPO): |
This subclass is indented under subclass E21.545. This
subclass is substantially the same in scope as ECLA classification
H01L21/762C.
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E21.547 | ...... Dielectric material being obtained by full chemical transformation of nondielectric materials, such as polycrystalline silicon, metals (EPO): |
This subclass is indented under subclass E21.546. This subclass is substantially the same in scope as ECLA classification H01L21/762C2. | |
E21.548 | ...... Concurrent filling of plurality of trenches having different trench shape or dimension, e.g., rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches (EPO): |
This subclass is indented under subclass E21.546. This subclass is substantially the same in scope as ECLA classification H01L21/762C4. | |
E21.549 | ...... Of trenches having shape other than rectangular or V shape, e.g., rounded corners, oblique or rounded trench walls (EPO): |
This subclass is indented under subclass E21.546. This subclass is substantially the same in scope as ECLA classification H01L21/762C6. | |
E21.55 | ....... Trench shape altered by local oxidation of silicon process step, e.g., trench corner rounding by LOCOS (EPO): |
This subclass is indented under subclass E21.549. This subclass is substantially the same in scope as ECLA classification H01L21/762C6A. | |
E21.551 | ...... Introducing impurities in trench side or bottom walls, e.g., for forming channel stoppers or alter isolation behavior (EPO): |
This subclass is indented under subclass E21.546. This subclass is substantially the same in scope as ECLA classification H01L21/762C8. | |
E21.552 | ..... Using local oxidation of silicon, e.g., LOCOS, SWAMI, SILO (EPO): |
This subclass is indented under subclass E21.545. This subclass is substantially the same in scope as ECLA classification H01L21/762B. | |
E21.553 | ...... In region recessed from surface, e.g., in recess, groove, tub or trench region (EPO): |
This subclass is indented under subclass E21.552. This subclass is substantially the same in scope as ECLA classification H01L21/762B2. | |
E21.554 | ....... Using auxiliary pillars in recessed region, e.g., to form LOCOS over extended areas (EPO): |
This subclass is indented under subclass E21.553. This subclass is substantially the same in scope as ECLA classification H01L21/762B2B. | |
E21.555 | ....... Recessed region having shape other than rectangular, e.g., rounded or oblique shape (EPO): |
This subclass is indented under subclass E21.553. This subclass is substantially the same in scope as ECLA classification H01L21/762B2C. | |
E21.556 | ...... Introducing electrical inactive or active impurities in local oxidation region, e.g., to alter LOCOS oxide growth characteristics or for additional isolation purpose (EPO): |
This subclass is indented under subclass E21.552. This subclass is substantially the same in scope as ECLA classification H01L21/762B4. | |
E21.557 | ....... Introducing electrical active impurities in local oxidation region solely for forming channel stoppers (EPO): |
This subclass is indented under subclass E21.556. This subclass is substantially the same in scope as ECLA classification H01L21/762B4B. | |
E21.558 | ........ Introducing both types of electrical active impurities in local oxidation region solely for forming channel stoppers, e.g., for isolation of complementary doped regions (EPO): |
This subclass is indented under subclass E21.557. This subclass is substantially the same in scope as ECLA classification H01L21/762B4B2. | |
E21.559 | ...... With plurality of successive local oxidation steps (EPO): |
This subclass is indented under subclass E21.552. This subclass is substantially the same in scope as ECLA classification H01L21/762B6. | |
E21.56 | ..... Dielectric isolation using EPIC technique, i.e., epitaxial passivated integrated circuit (EPO): |
This subclass is indented under subclass E21.545. This subclass is substantially the same in scope as ECLA classification H01L21/762F. | |
E21.561 | ..... Using semiconductor or insulator technology, i.e., SOI technology (EPO): |
This subclass is indented under subclass E21.545. This subclass is substantially the same in scope as ECLA classification H01L21/762D. | |
E21.562 | ...... Using selective deposition of single crystal silicon, e.g., Selective Epitaxial Growth (SEG) (EPO): |
This subclass is indented under subclass E21.561. This
subclass is substantially the same in scope as ECLA classification
H01L21/762D10.
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| |||||
E21.563 | ...... Using silicon implanted buried insulating layers, e.g., oxide layers, i.e., SIMOX technique (EPO): |
This subclass is indented under subclass E21.561. This subclass is substantially the same in scope as ECLA classification H01L21/762D2. | |
E21.564 | ...... SOI together with lateral isolation, e.g., using local oxidation of silicon, or dielectric or polycrystalline material refilled trench or air gap isolation regions, e.g., completely isolated semiconductor islands (EPO): |
This subclass is indented under subclass E21.561. This subclass is substantially the same in scope as ECLA classification H01L21/762D20. | |
E21.565 | ...... Using full isolation by porous oxide silicon, i.e., FIPOS technique (EPO): |
This subclass is indented under subclass E21.561. This subclass is substantially the same in scope as ECLA classification H01L21/762D4. | |
E21.566 | ...... Using lateral overgrowth technique, i.e., ELO techniques (EPO): |
This subclass is indented under subclass E21.561. This subclass is substantially the same in scope as ECLA classification H01L21/762D6. | |
E21.567 | ...... Using bonding technique (EPO): |
This subclass is indented under subclass E21.561. This subclass is substantially the same in scope as ECLA classification H01L21/762D8. | |
E21.568 | ....... With separation/delamination along ion implanted layer, e.g., "Smart-cut", "Unibond" (EPO): |
This subclass is indented under subclass E21.567. This subclass is substantially the same in scope as ECLA classification H01L21/762D8B. | |
E21.569 | ....... Using silicon etch back technique, e.g., BESOI, ELTRAN (EPO): |
This subclass is indented under subclass E21.567. This subclass is substantially the same in scope as ECLA classification H01L21/762D8D. | |
E21.57 | ....... With separation/delamination along porous layer (EPO): |
This subclass is indented under subclass E21.567. This subclass is substantially the same in scope as ECLA classification H01L21/762D8F. | |
E21.571 | ..... Using selective deposition of single crystal silicon, i.e., SEG technique (EPO): |
This subclass is indented under subclass E21.545. This subclass is substantially the same in scope as ECLA classification H01L21/762E. | |
E21.572 | .... Polycrystalline semiconductor regions (EPO): |
This subclass is indented under subclass E21.54. This subclass is substantially the same in scope as ECLA classification H01L21/763. | |
E21.573 | .... Air gaps (EPO): |
This subclass is indented under subclass E21.54. This subclass is substantially the same in scope as ECLA classification H01L21/764. | |
E21.574 | .... Isolation by field effect (EPO): |
This subclass is indented under subclass E21.54. This subclass is substantially the same in scope as ECLA classification H01L21/765. | |
E21.575 | ... Interconnections, comprising conductors and dielectrics, for carrying current between separate components within device (EPO): |
This subclass is indented under subclass E21.536. This subclass is substantially the same in scope as ECLA classification H01L21/768. | |
E21.576 | .... Characterized by formation and posttreatment of dielectrics, e.g., planarizing (EPO): |
This subclass is indented under subclass E21.575. This subclass is substantially the same in scope as ECLA classification H01L21/768B. | |
E21.577 | ..... By forming via holes (EPO): |
This subclass is indented under subclass E21.576. This subclass is substantially the same in scope as ECLA classification H01L21/768B2. | |
E21.578 | ...... Tapered via holes (EPO): |
This subclass is indented under subclass E21.577. This subclass is substantially the same in scope as ECLA classification H01L21/768B2B. | |
E21.579 | ...... For "dual damascene" type structures (EPO): |
This subclass is indented under subclass E21.577. This subclass is substantially the same in scope as ECLA classification H01L21/768B2D. | |
E21.58 | ..... Planarizing dielectric (EPO): |
This subclass is indented under subclass E21.576. This subclass is substantially the same in scope as ECLA classification H01L21/768B4. | |
E21.581 | ..... Dielectric comprising air gaps (EPO): |
This subclass is indented under subclass E21.576. This
subclass is substantially the same in scope as ECLA classification
H01L21/768B6.
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E21.582 | ..... Characterized by formation and posttreatment of conductors, e.g., patterning (EPO): |
This subclass is indented under subclass E21.575. This subclass is substantially the same in scope as ECLA classification H01L21/768C. | |
E21.583 | ..... Planarization; smoothing (EPO): |
This subclass is indented under subclass E21.582. This
subclass is substantially the same in scope as ECLA classification
H01L21/768C2.
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| |||
E21.584 | ..... Barrier, adhesion or liner layer (EPO): |
This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C3. | |
E21.585 | ..... Filling of holes, grooves, vias or trenches with conductive material (EPO): |
This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C4. | |
E21.586 | ...... By selective deposition of conductive material in vias, e.g., selective chemical vapor deposition on semiconductor material, plating (EPO): |
This subclass is indented under subclass E21.585. This subclass is substantially the same in scope as ECLA classification H01L21/768C4B. | |
E21.587 | ...... By deposition over sacrificial masking layer, e.g., lift-off (EPO): |
This subclass is indented under subclass E21.585. This
subclass is substantially the same in scope as ECLA classification
H01L21/768C4C.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.588 | ...... Reflowing or applying pressure to fill contact hole, e.g., to remove voids (EPO): |
This subclass is indented under subclass E21.585. This subclass is substantially the same in scope as ECLA classification H01L21/768C4E. | |
E21.589 | ..... By forming conductive members before deposition of protective insulating material, e.g., pillars, studs (EPO): |
This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C6. | |
E21.59 | ..... Local interconnects; local pads (EPO): |
This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C10. | |
E21.591 | ..... Modifying pattern or conductivity of conductive members, e.g., formation of alloys, reduction of contact resistances (EPO): |
This subclass is indented under subclass E21.582. This subclass is substantially the same in scope as ECLA classification H01L21/768C8. | |
E21.592 | ...... By altering solid-state characteristics of conductive members, e.g., fuses, in situ oxidation, laser melting (EPO): |
This subclass is indented under subclass E21.591. This
subclass is substantially the same in scope as ECLA classification
H01L21/768C8B.
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E21.593 | ...... By forming silicide of refractory metal (EPO): |
This subclass is indented under subclass E21.591. This subclass is substantially the same in scope as ECLA classification H01L21/768C8C. | |
E21.594 | ...... By using super-conducting material (EPO): |
This subclass is indented under subclass E21.591. This subclass is substantially the same in scope as ECLA classification H01L21/768C8D. | |
E21.595 | ...... Modifying pattern (EPO): |
This subclass is indented under subclass E21.591. This subclass is substantially the same in scope as ECLA classification H01L21/768C8L. | |
E21.596 | ....... Using laser, e.g., laser cutting, laser direct writing, laser repair (EPO): |
This subclass is indented under subclass E21.595. This subclass is substantially the same in scope as ECLA classification H01L21/768C8L2. | |
E21.597 | .... Formed through semiconductor substrate (EPO): |
This subclass is indented under subclass E21.575. This subclass is substantially the same in scope as ECLA classification H01L21/768T. | |
E21.598 | .. Manufacture or treatment of devices consisting of plurality of solid-state components or integrated circuits formed in, or on, common substrate (EPO): |
This subclass is indented under subclass E21.532. This subclass is substantially the same in scope as ECLA classification H01L21/77. | |
E21.599 | ... With subsequent division of substrate into plural individual devices (EPO): |
This subclass is indented under subclass E21.598. This subclass is substantially the same in scope as ECLA classification H01L21/78. | |
E21.6 | .... Involving separation of active layers from substrate (EPO): |
This subclass is indented under subclass E21.599. This subclass is substantially the same in scope as ECLA classification H01L21/78B. | |
E21.601 | ..... Leaving reusable substrate, e.g., epitaxial lift-off process (EPO): |
This subclass is indented under subclass E21.6. This subclass is substantially the same in scope as ECLA classification H01L21/78B2. | |
E21.602 | .... To produce devices each consisting of plurality of components, e.g., integrated circuits (EPO): |
This subclass is indented under subclass E21.599. This subclass is substantially the same in scope as ECLA classification H01L21/82. | |
E21.603 | ..... Substrate is semiconductor, using combination of semiconductor substrates, e.g., diamond, SiC, Si, Group III-V compound, and/or Group II-VI compound semiconductor substrates (EPO): |
This subclass is indented under subclass E21.602. This subclass is substantially the same in scope as ECLA classification H01L21/8258. | |
E21.604 | ..... Substrate is semiconductor, using diamond technology (EPO): |
This subclass is indented under subclass E21.602. This
subclass is substantially the same in scope as ECLA classification
H01L21/82D.
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| |||||||||||
E21.605 | ..... Substrate is semiconductor, using SiC technology (EPO): |
This subclass is indented under subclass E21.602. This subclass is substantially the same in scope as ECLA classification H01L21/82H. | |
E21.606 | ..... Substrate being semiconductor, using silicon technology (EPO): |
This subclass is indented under subclass E21.602. This subclass is substantially the same in scope as ECLA classification H01L21/822. | |
E21.607 | ...... Substrate being semiconductor, using silicon technology (EPO) |
This subclass has no definition. | |
E21.608 | ...... Bipolar technology (EPO): |
This subclass is indented under subclass E21.606. This subclass is substantially the same in scope as ECLA classification H01L21/8222. | |
E21.609 | ....... Comprising combination of vertical and lateral transistors (EPO): |
This subclass is indented under subclass E21.608. This subclass is substantially the same in scope as ECLA classification H01L21/8224. | |
E21.61 | ....... Comprising merged transistor logic or integrated injection logic (EPO): |
This subclass is indented under subclass E21.608. This subclass is substantially the same in scope as ECLA classification H01L21/8226. | |
E21.611 | ....... Complementary devices, e.g., complementary transistors (EPO): |
This subclass is indented under subclass E21.608. This subclass is substantially the same in scope as ECLA classification H01L21/8228. | |
E21.612 | ........ Complementary vertical transistors (EPO): |
This subclass is indented under subclass E21.611. This subclass is substantially the same in scope as ECLA classification H01L21/8228B. | |
E21.613 | ....... Memory structures (EPO): |
This subclass is indented under subclass E21.608. This subclass is substantially the same in scope as ECLA classification H01L21/8229. | |
E21.614 | ...... Three-dimensional integrated circuits stacked in different levels (EPO): |
This subclass is indented under subclass E21.606. This subclass is substantially the same in scope as ECLA classification H01L21/822B. | |
E21.615 | ...... Field-effect technology (EPO): |
This subclass is indented under subclass E21.606. This subclass is substantially the same in scope as ECLA classification H01L21/8232. | |
E21.616 | ....... MIS technology (EPO): |
This subclass is indented under subclass E21.615. This subclass is substantially the same in scope as ECLA classification H01L21/8234. | |
E21.617 | ........ Combination of charge coupled devices, i.e., CCD or BBD (EPO): |
This subclass is indented under subclass E21.616. This subclass is substantially the same in scope as ECLA classification H01L21/8234B. | |
E21.618 | ........ With particular manufacturing method of channel, e.g., channel implants, halo or pocket implants, or channel materials (EPO): |
This subclass is indented under subclass E21.616. This subclass is substantially the same in scope as ECLA classification H01L21/8234C. | |
E21.619 | ........ With particular manufacturing method of source or drain, e.g., specific S or D implants or silicided S or D structures or raised S or D structures (EPO): |
This subclass is indented under subclass E21.616. This subclass is substantially the same in scope as ECLA classification H01L21/8234D. | |
E21.62 | ......... Manufacturing common source or drain regions between plurality of conductor-insulator-semiconductor structures (EPO): |
This subclass is indented under subclass E21.619. This subclass is substantially the same in scope as ECLA classification H01L21/8234D2. | |
E21.621 | ........ With particular manufacturing method of gate conductor, e.g., particular materials, shapes (EPO): |
This subclass is indented under subclass E21.616. This subclass is substantially the same in scope as ECLA classification H01L21/8234G. | |
E21.622 | ......... Silicided or salicided gate conductors (EPO): |
This subclass is indented under subclass E21.621. This subclass is substantially the same in scope as ECLA classification H01L21/8234G2. | |
E21.623 | ......... Gate conductors with different gate conductor materials or different gate conductor implants, e.g., dual gate structures (EPO): |
This subclass is indented under subclass E21.621. This subclass is substantially the same in scope as ECLA classification H01L21/8234G4. | |
E21.624 | ......... Gate conductors with different shapes, lengths or dimensions (EPO): |
This subclass is indented under subclass E21.621. This subclass is substantially the same in scope as ECLA classification H01L21/8234G6. | |
E21.625 | ........ With particular manufacturing method of gate insulating layer, e.g., different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants (EPO): |
This subclass is indented under subclass E21.616. This subclass is substantially the same in scope as ECLA classification H01L21/8234J. | |
E21.626 | ........ With particular manufacturing method of gate sidewall spacers, e.g., double spacers, particular spacer material or shape (EPO): |
This subclass is indented under subclass E21.616. This subclass is substantially the same in scope as ECLA classification H01L21/8234S. | |
E21.627 | ........ Interconnection or wiring or contact manufacturing related aspects (EPO): |
This subclass is indented under subclass E21.616. This subclass is substantially the same in scope as ECLA classification H01L21/8234T. | |
E21.628 | ........ Isolation region manufacturing related aspects, e.g., to avoid interaction of isolation region with adjacent structure (EPO): |
This subclass is indented under subclass E21.616. This subclass is substantially the same in scope as ECLA classification H01L21/8234U. | |
E21.629 | ........ With particular manufacturing method of vertical transistor structures, i.e., with channel vertical to substrate surface (EPO): |
This subclass is indented under subclass E21.616. This subclass is substantially the same in scope as ECLA classification H01L21/8234V. | |
E21.63 | ........ With particular manufacturing method of wells or tubs, e.g., twin tubs, high energy well implants, buried implanted layers for lateral isolation (BILLI) (EPO): |
This subclass is indented under subclass E21.616. This subclass is substantially the same in scope as ECLA classification H01L21/8234W. | |
E21.631 | ........ Combination of enhancement and depletion transistors (EPO): |
This subclass is indented under subclass E21.616. This subclass is substantially the same in scope as ECLA classification H01L21/8236. | |
E21.632 | ........ Complementary field-effect transistors, e.g., CMOS (EPO): |
This subclass is indented under subclass E21.616. This subclass is substantially the same in scope as ECLA classification H01L21/8238. | |
E21.633 | ......... With particular manufacturing method of channel, e.g., channel implants, halo or pocket implants, or channel materials (EPO): |
This subclass is indented under subclass E21.632. This subclass is substantially the same in scope as ECLA classification H01L21/8238C. | |
E21.634 | ......... With particular manufacturing method of source or drain, e.g., specific S or D implants or silicided S or D structures or raised S or D structures (EPO): |
This subclass is indented under subclass E21.632. This subclass is substantially the same in scope as ECLA classification H01L21/8238D. | |
E21.635 | ......... With particular manufacturing method of gate conductor, e.g., particular materials, shapes (EPO): |
This subclass is indented under subclass E21.632. This subclass is substantially the same in scope as ECLA classification H01L21/8238G. | |
E21.636 | .......... Silicided or salicided gate conductors (EPO): |
This subclass is indented under subclass E21.635. This subclass is substantially the same in scope as ECLA classification H01L21/8238G2. | |
E21.637 | .......... Gate conductors with different gate conductor materials or different gate conductor implants, e.g., dual gate structures (EPO): |
This subclass is indented under subclass E21.635. This subclass is substantially the same in scope as ECLA classification H01L21/8238G4. | |
E21.638 | .......... Gate conductors with different shapes, lengths or dimensions (EPO): |
This subclass is indented under subclass E21.635. This subclass is substantially the same in scope as ECLA classification H01L21/8238G6. | |
E21.639 | ......... With particular manufacturing method of gate insulating layer, e.g., different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants (EPO): |
This subclass is indented under subclass E21.632. This subclass is substantially the same in scope as ECLA classification H01L21/8238J. | |
E21.64 | ......... With particular manufacturing method of gate sidewall spacers, e.g., double spacers, particular spacer material or shape (EPO): |
This subclass is indented under subclass E21.632. This subclass is substantially the same in scope as ECLA classification H01L21/8238S. | |
E21.641 | ......... Interconnection or wiring or contact manufacturing related aspects (EPO): |
This subclass is indented under subclass E21.632. This subclass is substantially the same in scope as ECLA classification H01L21/8238T. | |
E21.642 | ......... Isolation region manufacturing related aspects, e.g., to avoid interaction of isolation region with adjacent structure (EPO): |
This subclass is indented under subclass E21.632. This subclass is substantially the same in scope as ECLA classification H01L21/8238U. | |
E21.643 | ......... With particular manufacturing method of vertical transistor structures, i.e., with channel vertical to substrate surface (EPO): |
This subclass is indented under subclass E21.632. This subclass is substantially the same in scope as ECLA classification H01L21/8238V. | |
E21.644 | ........ With particular manufacturing method of wells or tubs, e.g., twin tubs, high energy well implants, buried implanted layers for lateral isolation (BILLI) (EPO): |
This subclass is indented under subclass E21.616. This subclass is substantially the same in scope as ECLA classification H01L21/8238W. | |
E21.645 | ........ Memory structures (EPO): |
This subclass is indented under subclass E21.616. This subclass is substantially the same in scope as ECLA classification H01L21/8239. | |
E21.646 | ........ Dynamic random access memory structures (DRAM) (EPO): |
This subclass is indented under subclass E21.645. This subclass is substantially the same in scope as ECLA classification H01L21/8242. | |
E21.647 | ......... Characterized by type of capacitor (EPO): |
This subclass is indented under subclass E21.646. This subclass is substantially the same in scope as ECLA classification H01L21/8242B. | |
E21.648 | .......... Capacitor stacked over transfer transistor (EPO): |
This subclass is indented under subclass E21.647. This
subclass is substantially the same in scope as ECLA classification
H01L21/8242B2.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.649 | ........... Making connection between transistor and capacitor, e.g., plug (EPO): |
This subclass is indented under subclass E21.648. This subclass is substantially the same in scope as ECLA classification H01L21/8242B2C. | |
E21.65 | ........... Capacitor extending under transfer transistor area (EPO): |
This subclass is indented under subclass E21.647. This subclass is substantially the same in scope as ECLA classification H01L21/8242B4. | |
E21.651 | ........... Capacitor in U- or V-shaped trench in substrate (EPO): |
This subclass is indented under subclass E21.647. This subclass is substantially the same in scope as ECLA classification H01L21/8242B6. | |
E21.652 | ............ In combination with vertical transistor (EPO): |
This subclass is indented under subclass E21.651. This subclass is substantially the same in scope as ECLA classification H01L21/8242B6B. | |
E21.653 | ............ Making connection between transistor and capacitor, e.g., buried strap (EPO): |
This subclass is indented under subclass E21.651. This subclass is substantially the same in scope as ECLA classification H01L21/8242B6C. | |
E21.654 | .......... Characterized by type of transistor; manufacturing of transistor (EPO): |
This subclass is indented under subclass E21.646. This subclass is substantially the same in scope as ECLA classification H01L21/8242C. | |
E21.655 | ........... Transistor in U- or V-shaped trench in substrate (EPO): |
This subclass is indented under subclass E21.654. This subclass is substantially the same in scope as ECLA classification H01L21/8242C2. | |
E21.656 | .......... Characterized by data lines (EPO): |
This subclass is indented under subclass E21.646. This subclass is substantially the same in scope as ECLA classification H01L21/8242D. | |
E21.657 | ........... Making bit line (EPO): |
This subclass is indented under subclass E21.656. This subclass is substantially the same in scope as ECLA classification H01L21/8242D2. | |
E21.658 | ........... Making bit line contact (EPO): |
This subclass is indented under subclass E21.656. This subclass is substantially the same in scope as ECLA classification H01L21/8242D4. | |
E21.659 | ........... Making word line (EPO): |
This subclass is indented under subclass E21.656. This subclass is substantially the same in scope as ECLA classification H01L21/8242D6. | |
E21.66 | .......... Simultaneous fabrication of periphery and memory cells (EPO): |
This subclass is indented under subclass E21.646. This subclass is substantially the same in scope as ECLA classification H01L21/8242P. | |
E21.661 | ......... Static random access memory structures (SRAM) (EPO): |
This subclass is indented under subclass E21.645. This subclass is substantially the same in scope as ECLA classification H01L21/8244. | |
E21.662 | ......... Read-only memory structures (ROM), i.e., nonvolatile memory structures (EPO): |
This subclass is indented under subclass E21.645. This
subclass is substantially the same in scope as ECLA classification
H01L21/8246.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
E21.663 | .......... Ferroelectric nonvolatile memory structures (EPO): |
This subclass is indented under subclass E21.662. This subclass is substantially the same in scope as ECLA classification H01L21/8246F. | |
E21.664 | ........... With ferroelectric capacitor (EPO): |
This subclass is indented under subclass E21.663. This subclass is substantially the same in scope as ECLA classification H01L21/8246F6. | |
E21.665 | .......... Magnetic nonvolatile memory structures, e.g., MRAM (EPO): |
This subclass is indented under subclass E21.662. This subclass is substantially the same in scope as ECLA classification H01L21/8246M. | |
E21.666 | .......... PROM (EPO): |
This subclass is indented under subclass E21.662. This subclass is substantially the same in scope as ECLA classification H01L21/8246P. | |
E21.667 | .......... ROM only (EPO): |
This subclass is indented under subclass E21.662. This subclass is substantially the same in scope as ECLA classification H01L21/8246R. | |
E21.668 | ........... With source and drain on same level, e.g., lateral channel (EPO): |
This subclass is indented under subclass E21.667. This subclass is substantially the same in scope as ECLA classification H01L21/8246R2. | |
E21.669 | ............ Source or drain contact programmed (EPO): |
This subclass is indented under subclass E21.668. This subclass is substantially the same in scope as ECLA classification H01L21/8246R2B. | |
E21.67 | ............ Gate contact programmed (EPO): |
This subclass is indented under subclass E21.668. This subclass is substantially the same in scope as ECLA classification H01L21/8246R2C. | |
E21.671 | ............ Doping programmed, e.g., mask ROM (EPO): |
This subclass is indented under subclass E21.668. This subclass is substantially the same in scope as ECLA classification H01L21/8246R2D. | |
E21.672 | ............. Entire channel doping programmed (EPO): |
This subclass is indented under subclass E21.671. This subclass is substantially the same in scope as ECLA classification H01L21/8246R2D4. | |
E21.673 | ............. Source or drain doping programmed (EPO): |
This subclass is indented under subclass E21.671. This subclass is substantially the same in scope as ECLA classification H01L21/8246R2D6. | |
E21.674 | ............ Gate programmed, e.g., different gate material or no gate (EPO): |
This subclass is indented under subclass E21.668. This subclass is substantially the same in scope as ECLA classification H01L21/8246R2G. | |
E21.675 | ............ Gate dielectric programmed, e.g., different thickness (EPO): |
This subclass is indented under subclass E21.668. This subclass is substantially the same in scope as ECLA classification H01L21/8246R2T. | |
E21.676 | ........... With source and drain on different levels, e.g., vertical channel (EPO): |
This subclass is indented under subclass E21.667. This subclass is substantially the same in scope as ECLA classification H01L21/8246R4. | |
E21.677 | ........... With FETs on different levels, e.g., 3D ROM (EPO): |
This subclass is indented under subclass E21.667. This subclass is substantially the same in scope as ECLA classification H01L21/8246R6. | |
E21.678 | ........... Simultaneous fabrication of periphery and memory cells (EPO): |
This subclass is indented under subclass E21.667. This subclass is substantially the same in scope as ECLA classification H01L21/8246R8. | |
E21.679 | .......... Charge trapping insulator nonvolatile memory structures (EPO): |
This subclass is indented under subclass E21.662. This subclass is substantially the same in scope as ECLA classification H01L21/8246T. | |
E21.68 | .......... Electrically programmable (EPROM), i.e., floating gate memory structures (EPO): |
This subclass is indented under subclass E21.662. This subclass is substantially the same in scope as ECLA classification H01L21/8247. | |
E21.681 | ........... With conductive layer as control gate (EPO): |
This subclass is indented under subclass E21.68. This subclass is substantially the same in scope as ECLA classification H01L21/8247M. | |
E21.682 | ............ With source and drain on same level and without cell select transistor (EPO): |
This subclass is indented under subclass E21.681. This subclass is substantially the same in scope as ECLA classification H01L21/8247M2. | |
E21.683 | ............. Simultaneous fabrication of periphery and memory cells (EPO): |
This subclass is indented under subclass E21.682. This subclass is substantially the same in scope as ECLA classification H01L21/8247M2P. | |
E21.684 | .............. Including one type of peripheral FET (EPO): |
This subclass is indented under subclass E21.683. This subclass is substantially the same in scope as ECLA classification H01L21/8247M2P1. | |
E21.685 | ............... Control gate layer used for peripheral FET (EPO): |
This subclass is indented under subclass E21.684. This subclass is substantially the same in scope as ECLA classification H01L21/8247M2P1C. | |
E21.686 | ............... Intergate dielectric layer used for peripheral FET (EPO): |
This subclass is indented under subclass E21.684. This subclass is substantially the same in scope as ECLA classification H01L21/8247M2P1D. | |
E21.687 | ............... Floating gate layer used for peripheral FET (EPO): |
This subclass is indented under subclass E21.684. This subclass is substantially the same in scope as ECLA classification H01L21/8247M2P1F. | |
E21.688 | ............... Floating gate dielectric layer used for peripheral FET (EPO): |
This subclass is indented under subclass E21.684. This subclass is substantially the same in scope as ECLA classification H01L21/8247M2P1G. | |
E21.689 | .............. Including different types of peripheral FETs (EPO): |
This subclass is indented under subclass E21.683. This subclass is substantially the same in scope as ECLA classification H01L21/8247M2P2. | |
E21.69 | ............ With source and drain on same level and with cell select transistor (EPO): |
This subclass is indented under subclass E21.681. This subclass is substantially the same in scope as ECLA classification H01L21/8247M4. | |
E21.691 | ............. Simultaneous fabrication of periphery and memory cells (EPO): |
This subclass is indented under subclass E21.69. This subclass is substantially the same in scope as ECLA classification H01L21/8247M4P. | |
E21.692 | ............ With source and drain on different levels, e.g., sloping channel (EPO): |
This subclass is indented under subclass E21.681. This subclass is substantially the same in scope as ECLA classification H01L21/8247M8. | |
E21.693 | ............. For vertical channel (EPO): |
This subclass is indented under subclass E21.692. This subclass is substantially the same in scope as ECLA classification H01L21/8247M8V. | |
E21.694 | ........... With doped region as control gate (EPO): |
This subclass is indented under subclass E21.68. This subclass is substantially the same in scope as ECLA classification H01L21/8247S. | |
E21.695 | ...... Combination of bipolar and field-effect technologies (EPO): |
This subclass is indented under subclass E21.606. This subclass is substantially the same in scope as ECLA classification H01L21/8248. | |
E21.696 | ....... Bipolar and MOS technologies (EPO): |
This subclass is indented under subclass E21.695. This subclass is substantially the same in scope as ECLA classification H01L21/8249. | |
E21.697 | ..... Substrate is Group III-V semiconductor (EPO): |
This subclass is indented under subclass E21.602. This subclass is substantially the same in scope as ECLA classification H01L21/8252. | |
E21.698 | ..... Substrate is Group II-VI semiconductor (EPO): |
This subclass is indented under subclass E21.602. This subclass is substantially the same in scope as ECLA classification H01L21/8254. | |
E21.699 | ..... Substrate is semiconductor other than diamond, SiC, Si, Group III-V compound, or Group II-VI compound (EPO): |
This subclass is indented under subclass E21.602. This subclass is substantially the same in scope as ECLA classification H01L21/8256. | |
E21.7 | .... Substrate is nonsemiconductor body, e.g., insulating body (EPO): |
This subclass is indented under subclass E21.695. This
subclass is substantially the same in scope as ECLA classification
H01L21/782.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||||||||||
E21.701 | ..... Substrate is sapphire, e.g., silicon on sapphire structure (SOS) (EPO): |
This subclass is indented under subclass E21.7. This subclass is substantially the same in scope as ECLA classification H01L21/784. | |
E21.702 | ..... To produce devices, each consisting of single circuit element (EPO): |
This subclass is indented under subclass E21.599. This subclass is substantially the same in scope as ECLA classification H01L21/786. | |
E21.703 | ..... Substrate is semiconductor body (EPO): |
This subclass is indented under subclass E21.702. This subclass is substantially the same in scope as ECLA classification H01L21/84. | |
E21.704 | ...... Substrate is nonsemiconductor body, e.g., insulating body (EPO): |
This subclass is indented under subclass E21.702. This subclass is substantially the same in scope as ECLA classification H01L21/86. | |
E21.705 | .. Assembly of devices consisting of solid-state components formed in or on common substrate; assembly of integrated circuit devices (EPO): |
This subclass is indented under subclass E21.532. This subclass is substantially the same in scope as ECLA classification H01L21/98. | |
900 | MOSFET TYPE GATE SIDEWALL INSULATING SPACER: |
Subject matter wherein a metal oxide semiconductor field effect transistor with a gate electrode includes a relatively thick layer of electrically insulating material along the side wall of the gate electrode and wherein the source or drain region of the transistor has a distinct portion which is distant from the gate electrode and is aligned with the edge of the insulating material, so that the source or drain region is spaced from the gate electrode by the thickness of the insulating material. | |
901 | MOSFET SUBSTRATE BIAS: |
Subject matter wherein an electrical bias is applied between
the substrate and the source electrode of a metal oxide field effect
transistor.
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
902 | FET WITH METAL SOURCE REGION: |
Subject matter including a field effect transistor with a source region that comprises a metal material (e.g., a Schottky barrier or ohmic contact to the channel region). | |
903 | FET CONFIGURATION ADAPTED FOR USE AS STATIC MEMORY CELL: |
Subject matter wherein a field effect transistor is structurally arranged to be used in a static memory element (i.e., one in which information need not be periodically refreshed). | |
904 | . WITH PASSIVE COMPONENTS, (e.g., POLYSILICON RESISTORS): |
This subclass is indented under subclass 903. Subject matter including a solid-state electronic part/component in which charge carriers do not change their energy levels and that does not provide rectification, amplification, or switching, but which does react to voltage and current. Examples are pure resistors, capacitors and inductors. | |
905 | PLURAL DRAM CELLS SHARE COMMON CONTACT OR COMMON TRENCH: |
Subject matter comprising plural dynamic random access memory elements which share an electrical contact or trench. | |
906 | DRAM WITH CAPACITOR ELECTRODES USED FOR ACCESSING (E.G., BIT LINE IS CAPACITOR PLATE): |
Subject matter comprising a dynamic random access memory element having an electrode which forms one plate of a storage capacitor, which electrode is adapted to be supplied with varying electrical signals to get information into or out of the memory element. | |
907 | FOLDED BIT LINE DRAM CONFIGURATION: |
Subject matter comprising an array of dynamic random access memory elements including differential sense amplifiers each connected to two different rows of memory cells, wherein the two rows of memory cells connected to a specific sense amplifier lie adjacent and parallel to each other on the same side of the sense amplifier. | |
908 | DRAM CONFIGURATION WITH TRANSISTORS AND CAPACITORS OF PAIRS OF CELLS ALONG A STRAIGHT LINE BETWEEN ADJACENT BIT LINES: |
Subject matter comprising dynamic random access memory elements having transistors and capacitors, where memory elements connected to adjacent bit lines have transistors and capacitors which are not staggered but which lie along a straight line which is located between the adjacent bit lines of the device. | |
909 | MACROCELL ARRAYS (E.G., GATE ARRAYS WITH VARIABLE SIZE OR CONFIGURATION OF CELLS): |
Subject matter comprising plural geometric arrangements of groups of active solid-state devices, each group being connectable into a logic circuit, in one integrated, monolithic semiconductor chip. in which different groups differ from each other in size, complexity, or number of components. | |
910 | DIODE ARRAYS (E.G., DIODE READ-ONLY MEMORY ARRAY): |
A repeating geometric arrangement of electronic devices which have two terminals and an asymmetrical or nonlinear voltage-current characteristic. | |
911 | LIGHT SENSITIVE ARRAY ADAPTED TO BE SCANNED BY ELECTRON BEAM (E.G.,VIDICON DEVICE): |
A repeating geometric arrangement of light sensitive devices structured to be scanned by an electron beam. | |
912 | CHARGE TRANSFER DEVICE USING BOTH ELECTRON AND HOLE SIGNAL CARRIERS: |
Subject matter wherein a charge transfer device* uses both electron and hole carriers in the same transfer or storage regions of the charge transfer device. | |
913 | WITH MEANS TO ABSORB OR LOCALIZE UNWANTED IMPURITIES OR DEFECTS FROM SEMICONDUCTORS (E.G., HEAVY METAL GETTERING): |
Subject matter including a semiconductor device having means to absorb or localize semiconductor impurities or defects which would adversely affect the performance of the device, e.g., phosphosilicate glass coating to absorb deep level impurities. | |
914 | POLYSILICON CONTAINING OXYGEN, NITROGEN, OR CARBON (E.G., SIPOS): |
Subject matter comprising polycrystalline silicon which contains oxygen, nitrogen, or carbon. | |
915 | WITH TITANIUM NITRIDE PORTION OR REGION: |
Subject matter wherein an active solid-state device includes a portion or region of the device which contains titanium nitride. | |
916 | NARROW BAND GAP SEMICONDUCTOR MATERIAL (<<1eV): |
Subject matter wherein an active solid-state device material is a semiconductor in which the difference between the energy levels of electrons bound to their nuclei (valence electrons) and the energy levels that allow electrons to migrate freely (conduction electrons) is less than one electron volt. | |
917 | PLURAL DOPANTS OF SAME CONDUCTIVITY TYPE IN SAME REGION: |
Subject matter wherein an active solid-state device has a region or portion which contains at least two different impurity elements which have the same electrical conductivity type (i.e., both p-type or both n-type). | |
918 | LIGHT EMITTING REGENERATIVE SWITCHING DEVICE (E.G., LIGHT EMITTING SCR) ARRAYS, CIRCUITRY, ETC.: |
Subject matter wherein an active solid-state device
acts as if it has two or more active emitter junctions each of which
is associated with a separate, equivalent transistor having
an individual gain and, when initiated by a base region* current, the
equivalent transistors mutually drive each other in a regenerative manner
to lower the voltage drop between the emitters, and which
active solid-state device can generate light.
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919 | ELEMENTS OF SIMILAR CONSTRUCTION CONNECTED IN SERIES OR PARALLEL TO AVERAGE OUT MANUFACTURING VARIATIONS IN CHARACTERISTICS: |
Subject matter comprising devices wherein components or portions or regions of the devices having similar structure are electrically connected in series or parallel to average out manufacturing variations in their operational characteristics. | |
920 | CONDUCTOR LAYERS ON DIFFERENT LEVELS CONNECTED IN PARALLEL (E.G., TO REDUCE RESISTANCE): |
Subject matter wherein a device contains layers of electrical conductors and different conductor layers are electrically connected in parallel, to improve device operation (e.g., to reduce conductor resistance). | |
921 | RADIATION HARDENED SEMICONDUCTOR DEVICE: |
Subject matter in which an active solid-state device
is provided with means to render it relatively less susceptible
to being damaged or deleteriously affected in any way by radiant energy (e.g., alpha
particles).
SEE OR SEARCH THIS CLASS, SUBCLASS:
| |||
922 | WITH MEANS TO PREVENT INSPECTION OF OR TAMPERING WITH AN INTEGRATED CIRCUIT (E.G., "SMART CARD", ANTI-TAMPER): |
Subject matter comprising an integrated circuit with means to prevent inspection of, or tampering with the integrated circuit (e.g., an integrated circuit used in a "smart card" credit or bank card). | |
923 | WITH MEANS TO OPTIMIZE ELECTRICAL CONDUCTOR CURRENT CARRYING CAPACITY (E.G., PARTICULAR CONDUCTOR ASPECT RATIO): |
Subject matter in which an active solid-state device includes means to optimize the current carrying capacity of an electrical conductor of the device, e.g., by using a particular conductor cross-sectional configuration. | |
924 | WITH PASSIVE DEVICE (E.G., CAPACITOR), OR BATTERY, AS INTEGRAL PART OF HOUSING OR HOUSING ELEMENT (E.G., CAP): |
Subject matter which includes a distinct solid-state electronic device in which charge carriers do not change their energy levels and that does not provide rectification, amplification or switching, but which does react to voltage and current (e.g., resistors, capacitors, and inductors), or contains a battery, as an integral part of a housing or housing element for an active solid-state device. | |
925 | BRIDGE RECTIFIER MODULE: |
Subject matter comprising a self-contained element which includes two or more junction diodes structurally interconnected as a rectifier bridge circuit. | |
926 | ELONGATED LEAD EXTENDING AXIALLY THROUGH ANOTHER ELONGATED LEAD: |
Subject matter wherein an active solid-state device includes more than one electrical lead wherein one relatively long lead is coaxially located within another relatively long lead. | |
927 | DIFFERENT DOPING LEVELS IN DIFFERENT PARTS OF PN JUNCTION TO PRODUCE SHAPED DEPLETION LAYER: |
Subject matter wherein a pn junction device contains impurity dopants with differing concentrations of dopant in different parts of the PN junction such that a depletion region associated with the PN junction has a controlled shape. | |
928 | WITH SHORTED PN OR SCHOTTKY JUNCTION OTHER THAN EMITTER JUNCTION: |
Subject matter wherein a device has a pn or Schottky junction electrode which is electrically short circuited (i.e., there is a direct connection to both sides of the junction). | |
929 | PN JUNCTION ISOLATED INTEGRATED CIRCUIT WITH ISOLATION WALLS HAVING MINIMUM DOPANT CONCENTRATION AT INTERMEDIATE DEPTH IN EPITAXIAL LAYER (E.G., DIFFUSED FROM BOTH SURFACES OF EPITAXIAL LAYER): |
Subject matter comprising an integrated circuit with pn junction isolation and having boundary walls isolating the integrated circuit from its substrate, wherein the walls have a minimum concentration of dopant at an intermediate depth in an epitaxial layer substrate (e.g., diffused from both surfaces of an epitaxial layer). | |
930 | THERMOELECTRIC (E.G., PELTIER EFFECT) COOLING: |
Subject matter comprising means thermally connected to an active solid-state device which, when subjected to the application of an electric or magnetic field or electric current, causes heat to be absorbed and thereby to cool the active solid-state device. | |
FOR000 | CLASS-RELATED FOREIGN DOCUMENTS |
This subclass has no definition. | |