US 9,814,143 B1
Method of forming pattern with high aspect ratio on polycrystalline aluminum nitride substrate
Chung-Yen Lu, Taoyuan (TW); Yi-Hsiuan Yu, Tao-Yuan (TW); Chia-Ting Lin, Hsinchu County (TW); and Lea-Hwung Leu, Taoyuan (TW)
Assigned to National Chung Shan Institute of Science and Technology, Toayuan (TW)
Filed by NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY, Taoyuan (TW)
Filed on Nov. 28, 2016, as Appl. No. 15/362,105.
Int. Cl. H01L 21/00 (2006.01); H05K 3/00 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01)
CPC H05K 3/0041 (2013.01) [H01L 21/486 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method of forming a pattern with high aspect ratio on a polycrystalline aluminum nitride substrate, comprising the steps of:
(A) providing an aluminum nitride substrate and forming a barrier layer on the aluminum nitride substrate;
(B) etching the barrier layer with an energy beam to form at least one recess in the barrier layer;
(C) plasma etching the substrate to deepen the recess into the aluminum nitride substrate; and
(D) removing the barrier layer to obtain the aluminum nitride substrate having at least one pattern with high aspect ratio,
wherein the barrier layer in step (A) is a metal barrier layer or a polymer barrier layer.