US 9,813,051 B2
Driving circuit for power switch
Zhenghao Cui, Beijing (CN)
Assigned to STMicroelectronics (Beijing) R&D Co. Ltd, Beijing (CN)
Filed by STMicroelectronics (Beijing) R&D Co. Ltd, Beijing (CN)
Filed on Feb. 24, 2016, as Appl. No. 15/52,170.
Claims priority of application No. 2016 1 0088186 (CN), filed on Feb. 16, 2016.
Prior Publication US 2017/0237421 A1, Aug. 17, 2017
Int. Cl. H03K 17/04 (2006.01); H03K 17/041 (2006.01); H03K 17/16 (2006.01)
CPC H03K 17/04106 (2013.01) [H03K 17/165 (2013.01)] 22 Claims
OG exemplary drawing
 
1. An electronic circuit for switching a power transistor having a drain coupled to a drain node, a source coupled to a lower voltage supply, and a gate coupled to a gate node, the electronic circuit comprising:
first current generation circuitry configured to generate a first current to flow into the gate node in response to assertion of an ON signal, the first current being substantially constant;
second current generation circuitry configured to generate a second current to flow into the gate node in response to deassertion of an OFF signal, the second current being inversely proportional to a gate to source voltage of the power transistor; and
first comparison circuitry configured to compare a drain voltage at the drain node to a reference voltage, and to activate third current generation circuitry to generate a third current to flow into the gate node when the drain voltage is less than the reference voltage.