US 9,813,049 B2
Comparator including a magnetic tunnel junction (MTJ) device and a transistor
Jimmy Kan, San Diego, CA (US); Manu Rastogi, San Diego, CA (US); Kangho Lee, San Diego, CA (US); and Seung Hyuk Kang, San Diego, CA (US)
Assigned to QUALCOMM Incorporated, San Diego, CA (US)
Filed by QUALCOMM Incorporated, San Diego, CA (US)
Filed on Aug. 12, 2015, as Appl. No. 14/824,460.
Prior Publication US 2017/0047912 A1, Feb. 16, 2017
Int. Cl. H03K 5/153 (2006.01); H03K 3/3565 (2006.01); H03K 3/45 (2006.01); H03K 3/012 (2006.01); H03K 5/24 (2006.01)
CPC H03K 3/3565 (2013.01) [H03K 3/012 (2013.01); H03K 3/45 (2013.01); H03K 3/455 (2013.01); H03K 5/2409 (2013.01); H03K 5/2472 (2013.01)] 30 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a magnetic tunnel junction (MTJ) device configured to switch between having a first magnetic orientation corresponding to a first resistance and having a second magnetic orientation corresponding to a second resistance based on a received input voltage;
a field line proximate to the MTJ device, the field line comprising a flux concentrating layer and configured to:
tune a comparator switching point of the MTJ device to a first comparator switching point value responsive to a first amount of current applied to the field line; and
tune the comparator switching point of the MTJ device to a second comparator switching point value responsive to a second amount of current applied to the field line; and
a transistor including a gate,
wherein an output of the MTJ device is coupled to a resistor and to the gate of the transistor, and wherein the MTJ device, the resistor, and the transistor are included in a comparator.