US 9,812,844 B2
Edge-emitting semiconductor laser and method for the production thereof
Alvaro Gomez-Iglesias, Regensburg (DE); Harald König, Bernhardswald (DE); and Christian Lauer, Regensburg (DE)
Assigned to OSRAM Opto Semiconductors GmbH, (DE)
Appl. No. 14/895,542
Filed by OSRAM Opto Semiconductors GmbH, Regensburg (DE)
PCT Filed Jun. 17, 2014, PCT No. PCT/EP2014/062741
§ 371(c)(1), (2) Date Dec. 3, 2015,
PCT Pub. No. WO2014/202619, PCT Pub. Date Dec. 24, 2014.
Claims priority of application No. 10 2013 211 851 (DE), filed on Jun. 21, 2013.
Prior Publication US 2016/0141837 A1, May 19, 2016
Int. Cl. H01S 5/20 (2006.01); H01S 5/10 (2006.01); H01S 5/32 (2006.01)
CPC H01S 5/2031 (2013.01) [H01S 5/1014 (2013.01); H01S 5/1082 (2013.01); H01S 5/209 (2013.01); H01S 5/3213 (2013.01); H01S 2301/18 (2013.01)] 11 Claims
OG exemplary drawing
 
1. An edge-emitting semiconductor laser comprising a semiconductor structure having a waveguide layer with an embedded active layer,
wherein the waveguide layer extends in a longitudinal direction between a first side facet and a second side facet of the semiconductor structure,
the semiconductor structure has a tapering region adjacent to the first side facet,
a thickness of the waveguide layer, measured perpendicularly to the longitudinal direction, in the tapering region increases along the longitudinal direction,
the waveguide layer is arranged between a first cladding layer and a second cladding layer,
a thickness of the second cladding layer, measured perpendicularly to the longitudinal direction, in the tapering region of the semiconductor structure increases in the longitudinal direction,
the tapering region comprises a first subregion and a second subregion,
the tapering region is configured as a chamfer extending from a step of the semiconductor structure to the first side facet of the semiconductor structure,
the chamfer extends at least partially into the waveguide layer,
the step is formed between the chamfer and an upper side of the semiconductor structure,
a thickness, measured perpendicularly to the longitudinal direction, of a second cladding layer adjacent to the waveguide layer increases at the step,
the first subregion is arranged closer to the first side facet than the second subregion,
the thickness of the waveguide layer increases in the longitudinal direction in the first subregion,
the thickness of the waveguide layer is constant in the longitudinal direction in the second subregion,
the thickness of the second cladding layer increases in the longitudinal direction in the second subregion.