US 9,812,843 B2
Method for producing light-emitting device
Masaya Kumei, Kanagawa (JP)
Assigned to FUJI XEROX CO., LTD., Tokyo (JP)
Filed by FUJI XEROX CO., LTD., Tokyo (JP)
Filed on Jul. 8, 2016, as Appl. No. 15/205,152.
Claims priority of application No. 2015-170315 (JP), filed on Aug. 31, 2015.
Prior Publication US 2017/0063041 A1, Mar. 2, 2017
Int. Cl. H01S 5/183 (2006.01); H01S 5/343 (2006.01); H01S 5/042 (2006.01); H01S 5/00 (2006.01); H01S 5/20 (2006.01)
CPC H01S 5/18313 (2013.01) [H01S 5/0021 (2013.01); H01S 5/0425 (2013.01); H01S 5/2068 (2013.01); H01S 5/3432 (2013.01); H01S 2301/176 (2013.01)] 18 Claims
OG exemplary drawing
1. A method for producing a light-emitting device, the method comprising:
oxidizing a current confinement layer containing Al by steam oxidation from a side face of a light-emitting element portion including the current confinement layer to form a current confinement structure in the light-emitting element portion;
heating the light-emitting element portion to about 150° C. or higher and about 400° C. or lower at reduced pressure for a predetermined heating time while the oxidized current confinement layer is exposed at the side face; and
after the light-emitting element portion is heated, forming a protective film on the side face,
wherein the light-emitting element portion is heated to a temperature at which aluminum hydroxide in the current confinement layer is converted into aluminum oxide.