US 9,812,750 B2
High frequency band pass filter with coupled surface mount transition
Steven Randall, Manlius, NY (US); and David Allen Bates, Fayetteville, NY (US)
Assigned to Knowles Cazenovia Inc., Cazenovia, NY (US)
Filed by Knowles Cazenovia Inc., Cazenovia, NY (US)
Filed on Nov. 1, 2016, as Appl. No. 15/340,573.
Application 15/340,573 is a continuation of application No. 13/926,169, filed on Jun. 25, 2013, granted, now 9,490,768.
Claims priority of provisional application 61/663,669, filed on Jun. 25, 2012.
Prior Publication US 2017/0047631 A1, Feb. 16, 2017
This patent is subject to a terminal disclaimer.
Int. Cl. H03H 7/01 (2006.01); H01P 1/20 (2006.01); H01P 1/203 (2006.01); H01P 5/02 (2006.01); H01P 11/00 (2006.01); H03H 3/00 (2006.01); H03H 7/00 (2006.01); H03H 7/38 (2006.01)
CPC H01P 1/2002 (2013.01) [H01P 1/20363 (2013.01); H01P 5/028 (2013.01); H01P 11/007 (2013.01); H03H 3/00 (2013.01); H03H 7/004 (2013.01); H03H 7/0161 (2013.01); H03H 7/38 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A dielectric filter comprising:
a dielectric filter substrate having a first surface and an opposed second surface, wherein electronic filter components are provided on the first surface of the filter substrate;
an input or output (IO) element located on the first surface of the filter substrate;
an impedance matching structure on the first surface of the filter substrate between the IO element and the electronic filter components, a first end of the impedance matching structure integrally connected to at least one protrusion that extends away from the IO element on the first surface, wherein a first distance, along a longitudinal extension axis of the filter substrate, between the first end of the impedance matching structure and a first end of the protrusion that is farthest from the first end of the impedance matching structure is greater than a second distance, along the longitudinal extension axis, between the first end of the impedance matching structure and an end of the electronic filter components that is nearest to the first end of the impedance matching structure; and
a signal connection element on the second surface of the filter substrate, capacitively coupled, through a thickness direction of the filter substrate, to the IO element on the first surface of the filter substrate without the presence of any conductive structure between the signal connection element and the IO element.