US 9,812,663 B2
Electroluminescent element and light-emitting device
Hiroko Abe, Tokyo (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (JP)
Filed on Mar. 20, 2017, as Appl. No. 15/462,944.
Application 15/462,944 is a continuation of application No. 15/090,679, filed on Apr. 5, 2016, granted, now 9,614,171.
Application 15/090,679 is a continuation of application No. 13/682,831, filed on Nov. 21, 2012, granted, now 9,312,506, issued on Apr. 12, 2016.
Application 13/682,831 is a continuation of application No. 12/983,354, filed on Jan. 3, 2011, granted, now 8,319,422, issued on Nov. 27, 2012.
Application 12/983,354 is a continuation of application No. 10/819,282, filed on Apr. 7, 2004, granted, now 7,862,906, issued on Jan. 4, 2011.
Claims priority of application No. 2003-105135 (JP), filed on Apr. 9, 2003.
Prior Publication US 2017/0194587 A1, Jul. 6, 2017
Int. Cl. H01L 51/54 (2006.01); H01L 51/50 (2006.01); H01L 51/52 (2006.01); C09K 11/02 (2006.01); C09K 11/06 (2006.01); H01L 51/00 (2006.01)
CPC H01L 51/504 (2013.01) [C09K 11/025 (2013.01); C09K 11/06 (2013.01); H01L 51/5016 (2013.01); H01L 51/5206 (2013.01); H01L 51/5221 (2013.01); C09K 2211/1007 (2013.01); C09K 2211/1029 (2013.01); C09K 2211/185 (2013.01); H01L 51/006 (2013.01); H01L 51/0058 (2013.01); H01L 51/0072 (2013.01); H01L 51/0087 (2013.01)] 20 Claims
 
1. A light-emitting device comprising:
a first electrode comprising indium, tin and oxygen;
a light-emitting layer over the first electrode, the light-emitting layer comprising a phosphorescent material;
a second electrode over the light-emitting layer;
a protective layer over and in contact with the second electrode, the protective layer comprising:
a first layer over the second electrode, the first layer comprising silicon and nitrogen;
a second layer over the first layer, the second layer comprising an organic compound; and
a third layer over the second layer, the third layer comprising silicon and nitrogen,
wherein the protective layer is not in contact with the first electrode.