US 9,812,660 B2
Method for single crystal growth of photovoltaic perovskite material and devices
Jinsong Huang, Lincoln, NE (US); and Qingfeng Dong, Lincoln, NE (US)
Assigned to NUtech Ventures, Lincoln, NE (US)
Filed by NUtech Ventures, Lincoln, NE (US)
Filed on Jan. 28, 2016, as Appl. No. 15/9,701.
Application 15/009,701 is a continuation in part of application No. 14/576,878, filed on Dec. 19, 2014, granted, now 9,391,287.
Claims priority of provisional application 62/108,863, filed on Jan. 28, 2015.
Claims priority of provisional application 61/918,330, filed on Dec. 19, 2013.
Prior Publication US 2016/0248028 A1, Aug. 25, 2016
Int. Cl. H01L 51/42 (2006.01); H01L 51/44 (2006.01); H01L 51/00 (2006.01); H01L 27/30 (2006.01); H01L 31/076 (2012.01); C30B 19/06 (2006.01); C30B 7/08 (2006.01); C30B 29/54 (2006.01); H01L 31/0256 (2006.01)
CPC H01L 51/4293 (2013.01) [C30B 7/08 (2013.01); C30B 19/062 (2013.01); C30B 29/54 (2013.01); H01L 27/302 (2013.01); H01L 31/076 (2013.01); H01L 51/0002 (2013.01); H01L 51/424 (2013.01); H01L 51/4213 (2013.01); H01L 51/441 (2013.01); H01L 51/442 (2013.01); H01L 51/005 (2013.01); H01L 51/0037 (2013.01); H01L 51/0077 (2013.01); H01L 2031/0344 (2013.01); Y02E 10/549 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A process for growing a perovskite single crystal, comprising:
generating a temperature gradient of at least 20° C. in a perovskite precursor solution; and
positioning a substrate in the precursor solution at a cooler portion of the perovskite precursor solution where the temperature is cooler than at a warmer portion of the perovskite precursor solution due to the temperature gradient, the substrate having a first end extending within the perovskite precursor solution toward the warmer portion of the perovskite precursor,
wherein a perovskite single crystal nucleates and grows on the substrate proximal to the first end of the substrate to form a large-size perovskite single crystal.