US 9,812,641 B2
Non-volatile memory device and methods for fabricating the same
Hsiu-Han Liao, Hsinchu (TW); and Ting-Ying Shen, Chiayi (TW)
Assigned to Winbond Electronics Corp., Taichung (TW)
Filed by Windbond Electronics Corp., Taichung (TW)
Filed on Sep. 29, 2014, as Appl. No. 14/500,492.
Claims priority of application No. 103111180 A (TW), filed on Mar. 26, 2014.
Prior Publication US 2015/0280121 A1, Oct. 1, 2015
Int. Cl. H01L 45/00 (2006.01); H01L 27/24 (2006.01)
CPC H01L 45/16 (2013.01) [H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A non-volatile memory device, comprising:
a first non-volatile memory cell configured to store two-bit data, comprising:
a first transistor and a second transistor disposed on a substrate, wherein the first transistor and the second transistor commonly use a first source region, and wherein a first gate of the first transistor and a second gate of the second transistor are different portions of a word line;
a first resistive switching element and a second resistive switching element respectively coupled to a first drain region of the first transistor and a second drain region of the second transistor;
a first source line coupled to the first source region;
a first bit line coupled to the first resistive switching element; and
a second bit line coupled to the second resistive switching element,
wherein the first source line, the first bit line and the second bit line belong to a same-level metal layer and are parallel to each other, and
wherein the word line is perpendicular to the first source line, the first bit line and the second bit line,
a second non-volatile memory cell configured to store two-bit data, comprising a third resistive switching element and a fourth resistive switching element; and
a top electrode contact plug coupled to the first resistive switching element of the first non-volatile memory cell and the third resistive switching element of the second non-volatile memory cell.