US 9,812,638 B2
Backend of line (BEOL) compatible high current density access device for high density arrays of electronic components
Donald S Bethune, San Jose, CA (US); Kailash Gopalakrishnan, San Jose, CA (US); Andrew J Kellock, Sunnyvale, CA (US); and Rohit S Shenoy, Fremont, CA (US)
Assigned to GLOBALFOUNDRIES Inc., Grand Cayman (KY)
Filed by Donald S Bethune, San Jose, CA (US); Kailash Gopalakrishnan, San Jose, CA (US); Andrew J Kellock, Sunnyvale, CA (US); and Rohit S Shenoy, Fremont, CA (US)
Filed on Mar. 19, 2010, as Appl. No. 12/727,746.
Prior Publication US 2011/0227023 A1, Sep. 22, 2011
Int. Cl. H01L 45/00 (2006.01); H01L 27/24 (2006.01)
CPC H01L 45/00 (2013.01) [H01L 27/2409 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A device, comprising:
a first conductive layer;
a second conductive layer comprising a tungsten layer; and
a M8XY6 layer sandwiched in between said first conductive layer on top and said second conductive layer on bottom, wherein
(i). M includes at least one element selected from the group consisting of Cu, Ag, Li, and Zn,
(ii). X includes at least one Group XIV element, and
(iii). Y includes at least one Group XVI element,
wherein said first conductive layer, second conductive layer and M8XY6 layer are in proximity to each other, thereby allowing current to pass through.