US 9,812,637 B2
Spin valve magnetoresistance element with improved response to magnetic fields
Claude Fermon, Orsay (FR); Paolo Campiglio, Arcueil (FR); and Bryan Cadugan, Paris (FR)
Assigned to Allegro MicroSystems, LLC, Worcester, MA (US); and Commissariat A L'Energie Atomique Et Aux Energies Alternatives, Paris (FR)
Filed by Allegro Microsystems, LLC, Worcester, MA (US)
Filed on May 26, 2016, as Appl. No. 15/165,322.
Claims priority of provisional application 62/171,532, filed on Jun. 5, 2015.
Prior Publication US 2016/0359103 A1, Dec. 8, 2016
Int. Cl. G11B 5/39 (2006.01); G01R 33/09 (2006.01); H01F 10/32 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); G11C 11/00 (2006.01); G01R 33/00 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); B82Y 10/00 (2011.01)
CPC H01L 43/08 (2013.01) [G01R 33/0052 (2013.01); G01R 33/09 (2013.01); G01R 33/093 (2013.01); G11B 5/3903 (2013.01); G11B 5/3906 (2013.01); G11B 5/3909 (2013.01); H01F 10/3218 (2013.01); H01F 10/3272 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); B82Y 10/00 (2013.01); G11B 2005/3996 (2013.01); H01F 10/3263 (2013.01); H01F 10/3268 (2013.01)] 40 Claims
OG exemplary drawing
 
1. A magnetoresistance element deposited upon a substrate, comprising:
an even number of free layer structures, the even number of free layer structures comprising a first free layer structure and a second free layer structure;
an even number of spacer layers, the even number of spacer layers comprising a first spacer layer and a second spacer layer;
an even number of pinned layer structures, the even number of pinned layer structures comprising a first pinned layer structure and a second pinned layer structure, wherein the even number of free layer structures, the even number of spacer layers, and the even number of pinned layer structures are disposed in a stack of layers, wherein the first spacer layer has a first thickness, first thickness selected to result in a first selected one of an antiferromagnetic coupling or a ferromagnetic coupling between the first pinned layer structure and the first free layer structure, and wherein the second spacer layer has a second thickness, different than the first thickness, the second thickness selected to result in a second selected one, different than the first selected one, of an antiferromagnetic coupling or a ferromagnetic coupling between the second pinned layer structure and the second free layer structure; and
an odd number of pining layers comprising at least a first pinning layer, a second pinning layer, and a third pinning layer, the first and second pinning layers magnetically coupled to the first and second pinned layer structures, respectively, wherein annealed magnetic directions of the first and second pinning layers are parallel to each other, and wherein an annealed magnetic direction of the third pinning layer is not in the same direction as the annealed magnetic directions of the first and second pinning layers.