US 9,812,624 B2
Method for producing conductive material, conductive material obtained by the method, electronic device containing the conductive material, light-emitting device, and method for producing light-emitting device
Masafumi Kuramoto, Tokushima (JP); Satoru Ogawa, Anan (JP); Katsuaki Suganuma, Suita (JP); and Keun-Soo Kim, Suita (JP)
Assigned to NICHIA CORPORATION, Anan-Shi (JP)
Filed by NICHIA CORPORATION, Anan-shi, Tokushima (JP)
Filed on Jan. 28, 2015, as Appl. No. 14/608,064.
Application 14/608,064 is a division of application No. 12/596,339, granted, now 8,968,608, previously published as PCT/JP2009/050212, filed on Jan. 9, 2009.
Claims priority of application No. 2008-007583 (JP), filed on Jan. 17, 2008.
Prior Publication US 2015/0171299 A1, Jun. 18, 2015
Int. Cl. H01B 1/02 (2006.01); H01L 33/62 (2010.01); B23K 1/00 (2006.01); B23K 35/02 (2006.01); H05K 1/09 (2006.01)
CPC H01L 33/62 (2013.01) [B23K 1/0008 (2013.01); B23K 1/0016 (2013.01); B23K 35/025 (2013.01); H01B 1/02 (2013.01); H01L 2924/0002 (2013.01); H01L 2933/0066 (2013.01); H05K 1/092 (2013.01); Y10T 29/49144 (2015.01)] 21 Claims
OG exemplary drawing
 
1. A method for producing a light-emitting device comprising a light-emitting element, a wiring board or a lead frame and a conductive material used as a bonding material for bonding the light-emitting element to the wiring board or the lead frame, the method comprising:
applying a first conductive material composition that comprises silver particles not coated with an organic substance and having an average particle diameter (median diameter) of 0.1 μm to 15 μm, and a metal oxide, over the wiring board or the lead frame;
placing the light-emitting element on the first conductive material composition, so as to obtain a light-emitting device precursor; and
sintering the light-emitting device precursor, so as to obtain the light-emitting device, wherein said sintering is carried out at a temperature in a range of 150° C. to 320° C. thus causing the silver particles to fuse with oxygen from said metal oxide to form silver oxide.