US 9,812,613 B2
Integrated LED light-emitting device and fabrication method thereof
Shaohua Huang, Xiamen (CN); Xiaoqiang Zeng, Xiamen (CN); and Chih-Wei Chao, Xiamen (CN)
Assigned to XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen (CN)
Filed by XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen (CN)
Filed on Oct. 8, 2016, as Appl. No. 15/289,145.
Application 15/289,145 is a continuation of application No. 14/748,921, filed on Jun. 24, 2015, granted, now 9,472,726.
Application 14/748,921 is a continuation of application No. PCT/CN2014/071093, filed on Jan. 22, 2014.
Claims priority of application No. 2013 1 0196146 (CN), filed on May 24, 2013.
Prior Publication US 2017/0025580 A1, Jan. 26, 2017
Int. Cl. H01L 29/205 (2006.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/48 (2010.01); H01L 27/15 (2006.01); H01L 33/44 (2010.01); H01L 21/78 (2006.01); H01L 25/075 (2006.01); H01L 33/62 (2010.01); H01L 23/00 (2006.01)
CPC H01L 33/385 (2013.01) [H01L 21/78 (2013.01); H01L 24/14 (2013.01); H01L 25/0753 (2013.01); H01L 27/15 (2013.01); H01L 27/153 (2013.01); H01L 33/005 (2013.01); H01L 33/387 (2013.01); H01L 33/44 (2013.01); H01L 33/486 (2013.01); H01L 33/62 (2013.01); H01L 27/156 (2013.01); H01L 33/382 (2013.01); H01L 2224/16245 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0066 (2013.01)] 11 Claims
OG exemplary drawing
 
4. A light-emitting diode (LED), comprising:
an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface;
at least one insulating layer over the lower surface; and
an electrode pad layer over the at least one insulating layer;
wherein:
the electrode pad layer comprises a P electrode region and an N electrode region; and
the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode pad layer;
the LED further comprising:
an insulator in the electrode pad layer to divide the electrode pad layer under the epitaxial structure into the P and N electrode regions,
wherein a lower surface of the insulator is not higher than a lower surface of the electrode pad layer; and
wherein a height difference between the lower surface of the insulator and the lower surface of the electrode pad layer is 20 - 100 μm.