| US 9,812,613 B2 | ||
| Integrated LED light-emitting device and fabrication method thereof | ||
| Shaohua Huang, Xiamen (CN); Xiaoqiang Zeng, Xiamen (CN); and Chih-Wei Chao, Xiamen (CN) | ||
| Assigned to XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen (CN) | ||
| Filed by XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD., Xiamen (CN) | ||
| Filed on Oct. 8, 2016, as Appl. No. 15/289,145. | ||
| Application 15/289,145 is a continuation of application No. 14/748,921, filed on Jun. 24, 2015, granted, now 9,472,726. | ||
| Application 14/748,921 is a continuation of application No. PCT/CN2014/071093, filed on Jan. 22, 2014. | ||
| Claims priority of application No. 2013 1 0196146 (CN), filed on May 24, 2013. | ||
| Prior Publication US 2017/0025580 A1, Jan. 26, 2017 | ||
| Int. Cl. H01L 29/205 (2006.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/48 (2010.01); H01L 27/15 (2006.01); H01L 33/44 (2010.01); H01L 21/78 (2006.01); H01L 25/075 (2006.01); H01L 33/62 (2010.01); H01L 23/00 (2006.01) | ||
| CPC H01L 33/385 (2013.01) [H01L 21/78 (2013.01); H01L 24/14 (2013.01); H01L 25/0753 (2013.01); H01L 27/15 (2013.01); H01L 27/153 (2013.01); H01L 33/005 (2013.01); H01L 33/387 (2013.01); H01L 33/44 (2013.01); H01L 33/486 (2013.01); H01L 33/62 (2013.01); H01L 27/156 (2013.01); H01L 33/382 (2013.01); H01L 2224/16245 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12041 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0033 (2013.01); H01L 2933/0066 (2013.01)] | 11 Claims |
| 4. A light-emitting diode (LED), comprising:
an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface;
at least one insulating layer over the lower surface; and
an electrode pad layer over the at least one insulating layer;
wherein:
the electrode pad layer comprises a P electrode region and an N electrode region; and
the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode
pad layer;
the LED further comprising:
an insulator in the electrode pad layer to divide the electrode pad layer under the epitaxial structure into the P and N electrode
regions,
wherein a lower surface of the insulator is not higher than a lower surface of the electrode pad layer; and
wherein a height difference between the lower surface of the insulator and the lower surface of the electrode pad layer is
20 - 100 μm.
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