US 9,812,612 B2
Solid state light emitting device and method of manufacturing a solid state light emitting device
Sander Petrus Martinus Noijen, Geldrop (NL); Roy Antoin Bastiaan Engelen, Geleen (NL); Norbertus Antonius Maria Sweegers, Lierop (NL); and Marc Andre de Samber, Eindhoven (NL)
Assigned to Koninklijke Philips N.V., Eindhoven (NL)
Appl. No. 15/36,879
Filed by KONINKLIJKE PHILIPS N.V., Eindhoven (NL)
PCT Filed Nov. 6, 2014, PCT No. PCT/EP2014/073852
§ 371(c)(1), (2) Date May 16, 2016,
PCT Pub. No. WO2015/074880, PCT Pub. Date May 28, 2015.
Claims priority of application No. 13193482 (EP), filed on Nov. 19, 2013.
Prior Publication US 2016/0329467 A1, Nov. 10, 2016
Int. Cl. H01L 33/38 (2010.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01); H01L 33/00 (2010.01)
CPC H01L 33/38 (2013.01) [H01L 33/0095 (2013.01); H01L 33/382 (2013.01); H01L 33/387 (2013.01); H01L 2933/0016 (2013.01)] 12 Claims
OG exemplary drawing
1. A solid state light emitting device, comprising:
a light emitting stack of a plurality of semiconductor layers;
a metallization on the light emitting stack including at least one metallization layer and comprising a guard layer of metal;
a dielectric layer on the guard layer of the metallization;
a plurality of stress-relief elements and/or anchor elements in an edge region of the metallization and/or dielectric layer, the edge region being the region of the solid state light emitting device adjacent to the edge of the solid state light emitting device, wherein the stress-relief elements are formed by a plurality of discrete regions of increased thickness or reduced thickness in the guard layer.