US 9,812,609 B1
Semiconductor device including oxide current aperture
Michael Grundmann, San Jose, CA (US); and Martin F. Schubert, Mountain View, CA (US)
Assigned to X Development LLC, Mountain View, CA (US)
Filed by X Development LLC, Mountain View, CA (US)
Filed on Apr. 11, 2016, as Appl. No. 15/96,118.
Int. Cl. H01L 33/00 (2010.01); H01S 5/20 (2006.01); H01L 33/14 (2010.01); H01L 33/30 (2010.01)
CPC H01L 33/145 (2013.01) [H01L 33/30 (2013.01)] 17 Claims
OG exemplary drawing
1. A semiconductor device including a light emitting diode (LED), comprising:
an N-type semiconductor layer;
an active region including aluminum indium gallium phosphide (AlInGaP) to emit red light from the LED, wherein the N-type semiconductor layer is located proximate to a first side of the active region;
a P-type semiconductor layer located proximate to a second opposite side, opposite the first side, of the active region; and
one or more oxide current apertures including a first oxide current aperture, wherein each oxide current aperture includes a non-oxidized region surrounded by an oxidized region positioned to direct current through the non-oxidized region into the AlInGaP to emit the red light.