| US 9,812,609 B1 | ||
| Semiconductor device including oxide current aperture | ||
| Michael Grundmann, San Jose, CA (US); and Martin F. Schubert, Mountain View, CA (US) | ||
| Assigned to X Development LLC, Mountain View, CA (US) | ||
| Filed by X Development LLC, Mountain View, CA (US) | ||
| Filed on Apr. 11, 2016, as Appl. No. 15/96,118. | ||
| Int. Cl. H01L 33/00 (2010.01); H01S 5/20 (2006.01); H01L 33/14 (2010.01); H01L 33/30 (2010.01) | ||
| CPC H01L 33/145 (2013.01) [H01L 33/30 (2013.01)] | 17 Claims |
| 1. A semiconductor device including a light emitting diode (LED), comprising:
an N-type semiconductor layer;
an active region including aluminum indium gallium phosphide (AlInGaP) to emit red light from the LED, wherein the N-type
semiconductor layer is located proximate to a first side of the active region;
a P-type semiconductor layer located proximate to a second opposite side, opposite the first side, of the active region; and
one or more oxide current apertures including a first oxide current aperture, wherein each oxide current aperture includes
a non-oxidized region surrounded by an oxidized region positioned to direct current through the non-oxidized region into the
AlInGaP to emit the red light.
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