US 9,812,608 B2
Deep ultraviolet light-emitting diode chip and package structure containing the same
Kuo-Ming Chiu, Taipei (TW); Meng-Sung Chou, Taipei (TW); Hao-Chung Kuo, Hsinchu County (TW); and Che-Yu Liu, Hsinchu County (TW)
Assigned to Lite-On Opto Technology (Changzhou) Co., Ltd., Jiangsu Province (CN); and Lite-On Technology Corp., Taipei (TW)
Filed by LITE-ON OPTO TECHNOLOGY (CHANGZHOU) CO., LTD., Jiangsu Province (CN); and LITE-ON TECHNOLOGY CORP., Taipei (TW)
Filed on Sep. 7, 2016, as Appl. No. 15/258,322.
Claims priority of application No. 2016 1 0148356 (CN), filed on Mar. 15, 2016.
Prior Publication US 2017/0271550 A1, Sep. 21, 2017
Int. Cl. H01L 33/00 (2010.01); H01L 33/06 (2010.01); H01L 33/32 (2010.01); H01L 33/12 (2010.01); H01L 33/48 (2010.01); H01L 33/60 (2010.01)
CPC H01L 33/06 (2013.01) [H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 33/483 (2013.01); H01L 33/60 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A deep ultraviolet light-emitting diode chip comprising:
a light-transmitting substrate;
a light-emitting unit including a buffer layer, an n-type aluminum gallium nitride layer, a multiple quantum well layer, and a p-type aluminum gallium nitride layer which are formed in sequence on said light-transmitting substrate;
an electrode unit including a first electrode disposed on said n-type aluminum gallium nitride layer, and a second electrode disposed on said p-type aluminum gallium nitride layer;
an electron blocking layer disposed between said multiple quantum well layer and said p-type aluminum gallium nitride layer; and
an optical layer formed on said light-transmitting substrate and opposite to said light-emitting unit,
wherein said optical layer is a graded refractive index layer having a refractive index ranging from 1.0 to a refractive index of said light-transmitting substrate, said graded refractive index layer including a multi-layer structure, each layer in said multi-layer structure having a composition of (HfO2)y(SiO2)100%-y, wherein y ranges from 0% to 50%, and a refractive index distribution of said multi-layer structure gradually decreases in a direction away from said light-transmitting substrate.