US 9,812,607 B2
Method for manufacturing nitride semiconductor template
Hajime Fujikura, Hitachi (JP)
Assigned to SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo (JP)
Appl. No. 15/511,909
Filed by SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo (JP)
PCT Filed Jul. 8, 2015, PCT No. PCT/JP2015/069589
§ 371(c)(1), (2) Date Mar. 16, 2017,
PCT Pub. No. WO2016/042891, PCT Pub. Date Mar. 24, 2016.
Claims priority of application No. 2014-188710 (JP), filed on Sep. 17, 2014.
Prior Publication US 2017/0263807 A1, Sep. 14, 2017
Int. Cl. H01L 21/00 (2006.01); H01L 33/00 (2010.01); C23C 16/34 (2006.01); H01L 33/12 (2010.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01); H01L 21/02 (2006.01)
CPC H01L 33/007 (2013.01) [C23C 16/34 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 33/12 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method for manufacturing a nitride semiconductor template, comprising the steps of:
growing and forming a buffer layer in a thickness of not more than a peak width of a projection and in a thickness of not less than 10 nm and not more than 330 nm on a sapphire substrate formed by arranging conical or pyramidal projections on its surface in a lattice pattern; and
growing and forming a nitride semiconductor layer on the buffer layer.