US 9,812,606 B2
Solid-state transducer devices with optically-transmissive carrier substrates and related systems, methods, and devices
Martin F. Schubert, Boise, ID (US); Vladimir Odnoblyudov, Eagle, ID (US); and Scott D. Schellhammer, Meridian, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on May 7, 2015, as Appl. No. 14/706,827.
Application 14/706,827 is a division of application No. 13/747,182, filed on Jan. 22, 2013, granted, now 9,054,235.
Prior Publication US 2015/0243835 A1, Aug. 27, 2015
Int. Cl. H01L 33/00 (2010.01); H01L 31/02 (2006.01); H01L 31/0236 (2006.01); H01L 31/0352 (2006.01); H01L 25/16 (2006.01); H01L 25/075 (2006.01); H01L 33/06 (2010.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01); H01L 33/48 (2010.01); H01L 33/62 (2010.01); H01L 27/146 (2006.01)
CPC H01L 33/0025 (2013.01) [H01L 25/0753 (2013.01); H01L 25/167 (2013.01); H01L 31/02 (2013.01); H01L 31/0236 (2013.01); H01L 31/035209 (2013.01); H01L 33/06 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 33/486 (2013.01); H01L 33/62 (2013.01); H01L 27/14687 (2013.01); H01L 33/0079 (2013.01); H01L 2924/0002 (2013.01); Y02E 10/50 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device assembly, comprising:
a plurality of semiconductor devices each including a section of a carrier substrate, electrical contacts, and a stack of semiconductor materials having a first side and a second side, wherein individual semiconductor devices are separated from one another by a (1) a first trench in the carrier substrate and (2) a second trench adjacent the corresponding stack of semiconductor materials, wherein the first trench has a first sidewall and the second trench has a second sidewall, at least one of the first sidewall or second sidewall being generally flat, wherein the second trench is aligned with and wider than the first trench, and wherein the second side of the individual semiconductor devices is arranged to emit and/or receive light having a wavelength in the range of 390 nm to 750 nm; and
a transfer structure comprising a tape in direct contact with the electrical contacts and attached to the first side of the individual semiconductor devices, wherein the carrier substrate is substantially optically transmissive such that the second side of each of the semiconductor devices can emit and/or receive the light through the corresponding section of the carrier substrate, and wherein the carrier substrate comprises a transparent or translucent material through which the light is emitted or received during operation of the corresponding semiconductor devices.