US 9,812,604 B2
Photosensing device with graphene
Klaus Y. J. Hsu, Hsinchu (TW)
Assigned to Klaus Y. J. Hsu, Hsinchu (TW); and Wispro Technology Consulting Corporation Limited, Kowloon (HK)
Filed by Klaus Y. J. Hsu, Hsinchu (TW); and Wispro Technology Consulting Corporation Limited, Kowloon (HK)
Filed on Mar. 16, 2015, as Appl. No. 14/659,273.
Application 14/659,273 is a continuation in part of application No. 14/291,007, filed on May 30, 2014.
Prior Publication US 2015/0349185 A1, Dec. 3, 2015
Int. Cl. H01L 31/10 (2006.01); H01L 31/101 (2006.01); H01L 31/109 (2006.01); H01L 27/146 (2006.01); H01L 31/028 (2006.01); H01L 29/16 (2006.01); H01L 31/108 (2006.01); H01L 31/09 (2006.01)
CPC H01L 31/109 (2013.01) [H01L 27/14612 (2013.01); H01L 27/14643 (2013.01); H01L 27/14665 (2013.01); H01L 29/1606 (2013.01); H01L 31/028 (2013.01); H01L 31/108 (2013.01); Y02E 10/547 (2013.01)] 29 Claims
OG exemplary drawing
 
1. A photosensing device, comprising:
a substrate
a gate insulation layer formed on the substrate;
a source region and a drain region formed on the substrate;
a graphene-silicon heterojunction positioned on the gate insulation layer, wherein the graphene-silicon heterojunction comprises a graphene layer and a gate layer;
wherein the graphene layer is positioned between the gate insulation layer and the gate layer.