US 9,812,603 B2
Photosensing device with graphene
Klaus Y. J. Hsu, New Taipei (TW)
Assigned to Klaus Y. J. Hsu, Hsinchu (TW); and Wispro Technology Consulting Corporation Limited, Kowloon (HK)
Filed by Klaus Y. J. Hsu, Hsinchu (TW); and WISPRO TECHNOLOGY CONSULTING CORPORATION LIMITED, Kowloon (HK)
Filed on May 30, 2014, as Appl. No. 14/291,007.
Prior Publication US 2015/0349184 A1, Dec. 3, 2015
Int. Cl. H01L 31/10 (2006.01); H01L 31/101 (2006.01); H01L 27/146 (2006.01); H01L 31/109 (2006.01); H01L 31/028 (2006.01); H01L 31/108 (2006.01); H01L 31/09 (2006.01)
CPC H01L 31/109 (2013.01) [H01L 27/1461 (2013.01); H01L 27/14612 (2013.01); H01L 27/14643 (2013.01); H01L 31/028 (2013.01); H01L 31/108 (2013.01); Y02E 10/547 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A photosensing device, comprising:
a substrate comprising a plurality of integrally formed photovoltage sensing mechanisms; and
a plurality of graphene-semiconductor heterojunctions configured to connect with a gate of a field-effect transistor for providing photovoltage, wherein each graphene-semiconductor heterojunction comprises:
a graphene layer; and
a semiconductor layer; wherein, the graphene layer is positioned on top of the substrate, and the semiconductor layer is positioned on top of the graphene layer; and
wherein each of the plurality of photovoltage sensing mechanisms is coupled to the corresponding one of the plurality of the graphene-semiconductor heterojunctions.