US 9,812,602 B2
Light detection device
Ki Yon Park, Ansan-si (KR); Hwa Mok Kim, Ansan-si (KR); Young Hwan Son, Ansan-si (KR); and Daewoong Suh, Ansan-si (KR)
Assigned to Seoul Viosys Co., Ltd., Ansan-si (KR)
Filed by Seoul Viosys Co., Ltd., Ansan-si (KR)
Filed on Sep. 21, 2015, as Appl. No. 14/860,653.
Application 14/860,653 is a continuation in part of application No. 14/140,054, filed on Dec. 24, 2013, granted, now 9,171,976, issued on Oct. 27, 2015.
Application 14/140,054 is a continuation in part of application No. 14/692,041, filed on Apr. 21, 2015, granted, now 9,166,093, issued on Oct. 20, 2015.
Application 14/692,041 is a continuation of application No. 14/140,086, filed on Dec. 24, 2013, granted, now 9,059,359, issued on Jun. 16, 2015.
Claims priority of application No. 10-2012-0157424 (KR), filed on Dec. 20, 2012; application No. 10-2012-0155413 (KR), filed on Dec. 27, 2012; and application No. 10-2013-0006274 (KR), filed on Jan. 21, 2013.
Prior Publication US 2016/0013351 A1, Jan. 14, 2016
Prior Publication US 2017/0244000 A9, Aug. 24, 2017
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/15 (2006.01); H01L 31/102 (2006.01); H01L 27/146 (2006.01); H01L 31/108 (2006.01); H01L 31/0304 (2006.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/101 (2006.01)
CPC H01L 31/108 (2013.01) [H01L 31/0224 (2013.01); H01L 31/022408 (2013.01); H01L 31/03048 (2013.01); H01L 31/1013 (2013.01); H01L 31/1848 (2013.01); Y02E 10/544 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A light detection device comprising:
a substrate;
a buffer layer disposed over the substrate;
a first band gap change layer disposed over a portion of the buffer layer;
a light absorption layer disposed over the first band gap change layer;
a Schottky layer disposed over a portion of the light absorption layer; and
a top layer disposed between the light absorption layer and the Schottky layer, and
wherein the light absorption layer has an energy band gap higher than that of the buffer layer and the first band gap change layer has multiple layers each having different Al contents such that the layers of the first band gap change layer have an increasing energy band gap towards the light absorption layer and the top layer has an energy band gap higher than that of the light absorption layer.