US 9,812,599 B2
Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
Bahman Hekmatshoar-Tabari, Mount Kisco, NY (US); Marinus Hopstaken, Carmel, NY (US); Dae-Gyu Park, Poughquaq, NY (US); Devendra K. Sadana, Pleasantville, NY (US); Ghavam G. Shahidi, Round Ridge, NY (US); and Davood Shahrjerdi, Ossining, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Aug. 3, 2015, as Appl. No. 14/816,726.
Application 14/816,726 is a continuation of application No. 13/605,068, filed on Sep. 6, 2012, granted, now 9,099,585.
Application 13/605,068 is a continuation of application No. 13/188,214, filed on Jul. 21, 2011, granted, now 8,778,448, issued on Jul. 15, 2014.
Prior Publication US 2015/0340532 A1, Nov. 26, 2015
Int. Cl. H01L 31/00 (2006.01); H01L 31/0376 (2006.01); H01L 31/0216 (2014.01); H01L 31/075 (2012.01); H01L 31/18 (2006.01); H01L 31/20 (2006.01)
CPC H01L 31/03762 (2013.01) [H01L 31/02167 (2013.01); H01L 31/075 (2013.01); H01L 31/1864 (2013.01); H01L 31/202 (2013.01); Y02E 10/548 (2013.01); Y02P 70/521 (2015.11)] 15 Claims
OG exemplary drawing
 
1. A photovoltaic device comprising:
a single crystalline semiconductor absorption layer of a first conductivity type having a first surface and a second surface that is opposite said first surface, said single crystalline semiconductor absorption layer having at least one local back field surface region of said first conductivity type located beneath said first surface of said crystalline semiconductor absorption layer;
an emitter layer comprising a semiconductor material having a second conductivity type that is different from said first conductivity type and directly contacting said second surface of said crystalline semiconductor absorption layer;
passivation layer portions located on said first surface of said single crystalline semiconductor absorption layer, wherein each passivation layer portion is separated by a gap and said gap exposes a surface of said at least one local back field surface region, and wherein at least one of said emitter layer and said passivation layer portions comprises a hydrogenated amorphous silicon containing material, wherein deuterium is present throughout an entirety of said hydrogenated amorphous silicon containing material.