| US 9,812,598 B2 | ||
| Metal-contact-free photodetector | ||
| Thomas Wetteland Baehr-Jones, Arcadia, CA (US); Yi Zhang, Jersey City, NJ (US); Michael J. Hochberg, New York, NY (US); and Ari Novack, New York, NY (US) | ||
| Assigned to Elenion Technologies, LLC, New York, NY (US) | ||
| Filed by Elenion Technologies, LLC, New York, NY (US) | ||
| Filed on Dec. 13, 2016, as Appl. No. 15/377,294. | ||
| Application 15/377,294 is a continuation of application No. 15/231,822, filed on Aug. 9, 2016, granted, now 9,553,222. | ||
| Application 15/231,822 is a continuation of application No. 14/644,122, filed on Mar. 10, 2015, granted, now 9,437,759, issued on Sep. 6, 2016. | ||
| Claims priority of provisional application 61/950,816, filed on Mar. 10, 2014. | ||
| Prior Publication US 2017/0104116 A1, Apr. 13, 2017 | ||
| Int. Cl. G01J 5/00 (2006.01); H01L 31/0352 (2006.01); H01L 31/028 (2006.01); H01L 31/107 (2006.01); H01L 31/18 (2006.01) | ||
| CPC H01L 31/0352 (2013.01) [H01L 31/028 (2013.01); H01L 31/107 (2013.01); H01L 31/1808 (2013.01)] | 18 Claims |
| 1. A photodetector, comprising:
a substrate including a device layer on a surface thereof;
a first doped semiconductor contact supported by the device layer;
a second doped semiconductor contact on the device layer;
a semiconductor body, in electrical contact with the first doped semiconductor contact and the second doped semiconductor
contact, the semiconductor body capable of generating electrical signals by absorbing electromagnetic radiation;
a first metal terminal, in electrical communication with said first doped semiconductor contact, but lacking direct contact
with the semiconductor body; and
a second metal terminal, in electrical communication with said second doped semiconductor contact, but lacking direct contact
with the semiconductor body;
wherein the first and second metal terminals are configured to provide the electrical signals to external circuitry;
wherein said first doped semiconductor contact comprises a first portion underneath the semiconductor body, and a connecting
slab between the semiconductor body and the first terminal; and
wherein the connecting slab comprises a higher doping level than the first portion.
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