US 9,812,598 B2
Metal-contact-free photodetector
Thomas Wetteland Baehr-Jones, Arcadia, CA (US); Yi Zhang, Jersey City, NJ (US); Michael J. Hochberg, New York, NY (US); and Ari Novack, New York, NY (US)
Assigned to Elenion Technologies, LLC, New York, NY (US)
Filed by Elenion Technologies, LLC, New York, NY (US)
Filed on Dec. 13, 2016, as Appl. No. 15/377,294.
Application 15/377,294 is a continuation of application No. 15/231,822, filed on Aug. 9, 2016, granted, now 9,553,222.
Application 15/231,822 is a continuation of application No. 14/644,122, filed on Mar. 10, 2015, granted, now 9,437,759, issued on Sep. 6, 2016.
Claims priority of provisional application 61/950,816, filed on Mar. 10, 2014.
Prior Publication US 2017/0104116 A1, Apr. 13, 2017
Int. Cl. G01J 5/00 (2006.01); H01L 31/0352 (2006.01); H01L 31/028 (2006.01); H01L 31/107 (2006.01); H01L 31/18 (2006.01)
CPC H01L 31/0352 (2013.01) [H01L 31/028 (2013.01); H01L 31/107 (2013.01); H01L 31/1808 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A photodetector, comprising:
a substrate including a device layer on a surface thereof;
a first doped semiconductor contact supported by the device layer;
a second doped semiconductor contact on the device layer;
a semiconductor body, in electrical contact with the first doped semiconductor contact and the second doped semiconductor contact, the semiconductor body capable of generating electrical signals by absorbing electromagnetic radiation;
a first metal terminal, in electrical communication with said first doped semiconductor contact, but lacking direct contact with the semiconductor body; and
a second metal terminal, in electrical communication with said second doped semiconductor contact, but lacking direct contact with the semiconductor body;
wherein the first and second metal terminals are configured to provide the electrical signals to external circuitry;
wherein said first doped semiconductor contact comprises a first portion underneath the semiconductor body, and a connecting slab between the semiconductor body and the first terminal; and
wherein the connecting slab comprises a higher doping level than the first portion.