US 9,812,597 B2
Optical sensor and manufacturing method thereof
Teng-Chien Yu, Hsinchu (TW); Sheng-Fu Lin, New Taipei (TW); and Ming-Sheng Yang, Hsinchu (TW)
Assigned to PERSONAL GENOMICS, INC., Grand Cayman (KY)
Filed by Personal Genomics, Inc., Grand Cayman (KY)
Filed on Aug. 11, 2015, as Appl. No. 14/823,815.
Claims priority of provisional application 62/036,317, filed on Aug. 12, 2014.
Prior Publication US 2016/0049529 A1, Feb. 18, 2016
Int. Cl. H01L 31/0232 (2014.01); B82Y 20/00 (2011.01); G01N 21/64 (2006.01); G01N 21/77 (2006.01); G02B 6/122 (2006.01)
CPC H01L 31/02327 (2013.01) [B82Y 20/00 (2013.01); G01N 21/648 (2013.01); G01N 21/6454 (2013.01); G01N 21/7703 (2013.01); G02B 6/1226 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductive substrate;
a dielectric layer over the semiconductive substrate;
a reflective structure in the dielectric layer;
a waveguide region configured to guide light from a wave insert portion through a waveguide portion and to a sample holding portion, and the waveguide portion comprising the dielectric layer and the reflective structure;
an interconnect region below the waveguide region, and the interconnect region being disposed above the light sensing region; and
a light sensing region over the semiconductive substrate, and the waveguide region disposed above the light sensing region,
wherein the reflective structure in the dielectric layer is not electrically connected to the light sensing region.