US 9,812,596 B2
Photoelectric device and electronic apparatus including the same
Kyungsang Cho, Gwacheon-si (KR); Chanwook Baik, Yongin-si (KR); and Heejeong Jeong, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-Si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 30, 2016, as Appl. No. 15/198,788.
Claims priority of application No. 10-2015-0131892 (KR), filed on Sep. 17, 2015.
Prior Publication US 2017/0084761 A1, Mar. 23, 2017
Int. Cl. H01L 31/0232 (2014.01); H01L 31/032 (2006.01); H01L 31/12 (2006.01); H01L 27/146 (2006.01); H01L 31/112 (2006.01); H01L 31/0352 (2006.01); B82Y 20/00 (2011.01)
CPC H01L 31/02322 (2013.01) [H01L 27/14647 (2013.01); H01L 31/032 (2013.01); H01L 31/035218 (2013.01); H01L 31/1126 (2013.01); B82Y 20/00 (2013.01); Y10S 977/774 (2013.01); Y10S 977/954 (2013.01)] 40 Claims
OG exemplary drawing
 
1. A photoelectric device for converting optical energy into electrical energy, the photoelectric device comprising:
a photoactive layer comprising:
a quantum dot layer configured to generate an electric charge in response to light incident thereon, and
a semiconductor layer configured to conduct the electric charge generated by the quantum dot layer;
a first electrode electrically connected to a first end of the semiconductor layer; and
a second electrode electrically connected to a second end of the semiconductor layer,
wherein the semiconductor layer comprises a lower semiconductor layer and an upper semiconductor layer, and the quantum dot layer is disposed between the lower semiconductor layer and the upper semiconductor layer, and
wherein a thickness of the lower semiconductor layer is different from a thickness of the upper semiconductor layer.