US 9,812,593 B2
Solar cell and preparing method of the same
Gi Gon Park, Seoul (KR)
Assigned to LG INNOTEK CO., LTD, Seoul (KR)
Appl. No. 14/356,087
Filed by LG INNOTEK CO., LTD., Seoul (KR)
PCT Filed Oct. 31, 2012, PCT No. PCT/KR2012/009023
§ 371(c)(1), (2) Date May 2, 2014,
PCT Pub. No. WO2013/066030, PCT Pub. Date May 10, 2013.
Claims priority of application No. 10-2011-0113292 (KR), filed on Nov. 2, 2011.
Prior Publication US 2014/0305505 A1, Oct. 16, 2014
Int. Cl. H01L 31/0328 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/0749 (2012.01); H01L 31/046 (2014.01); H01L 31/0465 (2014.01)
CPC H01L 31/02167 (2013.01) [H01L 31/022425 (2013.01); H01L 31/046 (2014.12); H01L 31/0465 (2014.12); H01L 31/0749 (2013.01); Y02E 10/541 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A solar cell comprising:
a support substrate;
a back electrode layer on the support substrate;
a molybdenum oxide layer on the back electrode layer;
a contact resistance layer on the molybdenum oxide layer;
a light absorbing layer on the contact resistance layer;
a buffer layer on the light absorbing layer;
a high-resistance buffer layer on the buffer layer;
a front electrode layer on the light absorbing layer;
a first perforating hole partially exposing a top surface of the support substrate and formed through the back electrode layer, the molybdenum oxide layer, and the contact resistance layer;
a second perforating hole partially exposing a top surface of the hack electrode layer and formed through the molybdenum oxide layer, the contact resistance layer, the buffer layer and the high-resistance buffer layer;
a third perforating hole partially exposing a top surface of the back electrode layer and formed through the molybdenum oxide layer, the contact resistance layer, the buffer layer, the high-resistance buffer layer and the front electrode layer; and
a current blocking part formed at both sides of the back electrode layer exposed through the first perforating hole;
wherein the light absorbing layer is filled in the first perforating hole;
wherein the light absorbing layer is in direct physical contact with a top surface of the support substrate, a top surface of the current blocking part, a lateral surface of the current blocking part, a lateral surface of the molybdenum oxide layer, and a lateral surface of the contact resistance layer in the first perforating hole;
wherein a side surface of the light absorbing layer has a step difference due to the current blocking part in the first perforating hole;
wherein the light absorbing layer is physically separated from the back electrode layer by the current blocking part; and
wherein a height of the current blocking part corresponds to a thickness of the back electrode layer.