| US 9,812,589 B2 | ||
| Semiconductor device with schottky barrier diode | ||
| Tatsuo Shimizu, Shinagawa (JP); and Takashi Shinohe, Yokosuka (JP) | ||
| Assigned to Kabushiki Kaisha Toshiba, Minato-ku (JP) | ||
| Filed by Kabushiki Kaisha Toshiba, Minato-ku (JP) | ||
| Filed on Aug. 31, 2016, as Appl. No. 15/252,449. | ||
| Claims priority of application No. 2015-179035 (JP), filed on Sep. 11, 2015. | ||
| Prior Publication US 2017/0077317 A1, Mar. 16, 2017 | ||
| Int. Cl. H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 29/872 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/47 (2006.01); H01L 29/06 (2006.01); H01L 29/04 (2006.01) | ||
| CPC H01L 29/872 (2013.01) [H01L 21/0495 (2013.01); H01L 29/0619 (2013.01); H01L 29/1608 (2013.01); H01L 29/47 (2013.01); H01L 29/8725 (2013.01); H01L 29/045 (2013.01)] | 14 Claims |
| 1. A semiconductor device comprising:
a first metal layer;
a second metal layer;
an n-type first SiC region provided between the first metal layer and the second metal layer, the n-type first SiC region
having an n-type impurity concentration of 1×1018 cm−3 or less; and
a conductive layer provided between the first SiC region and the first metal layer, the conductive layer being in contact
with the n-type first SiC region, the conductive layer including titanium (Ti), oxygen (O), and at least one element selected
from the group consisting of vanadium (V), niobium (Nb), and tantalum (Ta).
|